JPH11163436A - Magnetoresistance effect element and magnetoresistance effect type head - Google Patents

Magnetoresistance effect element and magnetoresistance effect type head

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Publication number
JPH11163436A
JPH11163436A JP9325746A JP32574697A JPH11163436A JP H11163436 A JPH11163436 A JP H11163436A JP 9325746 A JP9325746 A JP 9325746A JP 32574697 A JP32574697 A JP 32574697A JP H11163436 A JPH11163436 A JP H11163436A
Authority
JP
Japan
Prior art keywords
ferromagnetic layer
layer
ferromagnetic
output
magnetization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9325746A
Other languages
Japanese (ja)
Inventor
Yasusuke Irie
庸介 入江
Kazuo Yokoyama
和夫 横山
Osamu Kusumoto
修 楠本
Hiroyasu Tsuji
弘恭 辻
Toshio Fukazawa
利雄 深澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9325746A priority Critical patent/JPH11163436A/en
Publication of JPH11163436A publication Critical patent/JPH11163436A/en
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a high sensitivity high-output magnetoresistance effect type element and head. SOLUTION: A magnetoresistance effect element is constituted of a first ferromagnetic layer 2, an insulating layer (tunnel barrier layer) 3, a second ferromagnetic layer 4, an insulating layer (tunnel barrier layer) 5, a third ferromagnetic layer 6 and obtains its output by differentially detecting and adding up an output obtained from the first ferromagnetic layer 2, the insulating layer (tunnel barrier layer) 3, and the second ferromagnetic layer 4 and another output obtained from the second ferromagnetic layer 4, insulating layer (tunnel-barrier layer) 5, and the third ferromagnetic layer 3.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】この発明は、例えば磁気エン
コーダ、磁気記録媒体より信号を読みとるための磁気抵
抗効果素子及び磁気抵抗効果型ヘッドに関するものであ
る。特に高密度記録媒体からの読みだしに使用する素子
として強磁性トンネル効果を利用した素子として各所で
広く研究開発が進められている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, a magnetic encoder, a magnetoresistive element for reading signals from a magnetic recording medium, and a magnetoresistive head. In particular, research and development have been widely conducted in various places as elements utilizing the ferromagnetic tunnel effect as elements used for reading from high-density recording media.

【０００２】[0002]

【従来の技術】従来より磁気抵抗効果素子を用いた磁気
抵抗効果型ヘッド（以下、ＭＲヘッドという）等の開発
が進められている。近年、マルチメディア化にともなう
データの大容量化により大容量記憶装置の需要が高まっ
ている。大容量記憶装置の中でも特にハードディスクド
ライブ（以下ＨＤＤという）は、大容量、高速データ転
送、安価という点からパーソナルコンピューターなどを
中心にその需要が高まっている。このような流れから、
ＨＤＤは高密度化の傾向にあり、ＨＤＤを支えるデバイ
スの一つであるＭＲヘッドは高記録密度かにともない高
感度で峡トラック化、峡ギャップ化が要求されている。
このような要求からＭＲヘッドまたはスピンバルブヘッ
ドより高感度な磁気抵抗効果を示す素子として前記強磁
性トンネル素子があり、磁気抵抗効果素子及び磁気抵抗
効果型ヘッドとしての利用が検討されている。2. Description of the Related Art Hitherto, a magnetoresistive head (hereinafter referred to as an MR head) using a magnetoresistive element has been developed. In recent years, demand for large-capacity storage devices has increased due to the increase in data capacity accompanying multimedia. Among large-capacity storage devices, in particular, hard disk drives (hereinafter referred to as HDDs) are increasing in demand mainly for personal computers and the like because of their large capacity, high-speed data transfer, and low cost. From such a flow,
HDDs tend to have higher densities, and MR heads, which are one of the devices supporting HDDs, are required to have higher sensitivity and higher canopy track and canopy gaps due to their high recording density.
From such demands, there is the ferromagnetic tunnel element as an element exhibiting a magnetoresistive effect with higher sensitivity than an MR head or a spin valve head, and its use as a magnetoresistive element and a magnetoresistive head is under study.

【０００３】図１０(a)に強磁性トンネル素子の従来例
を示す。素子構成は、基板１上に積層された第１の強磁
性層２、絶縁層（トンネル障壁）３、第２の強磁性層４
からなり、第１の強磁性層２上に形成された電極ａは電
流端子（＋）、電極ｂは電圧端子（−）、第２の強磁性
層４上に形成された電極ｃは電流端子（−）、電極ｄは
電圧端子（−）である。FIG. 10A shows a conventional example of a ferromagnetic tunnel device. The element configuration includes a first ferromagnetic layer 2, an insulating layer (tunnel barrier) 3, and a second ferromagnetic layer 4 stacked on a substrate 1.
The electrode a formed on the first ferromagnetic layer 2 has a current terminal (+), the electrode b has a voltage terminal (-), and the electrode c formed on the second ferromagnetic layer 4 has a current terminal. (-), The electrode d is a voltage terminal (-).

【０００４】図１０（ａ）に示すように、第１の強磁性
層と第２の強磁性層の磁化容易軸を直交させる事で、外
部磁場に対する磁化の方向差が生じ易い配置が提案され
ている。この配置では、第１の強磁性層と第２の強磁性
層が交差しており、それぞれの強磁性層の両端に電極を
形成している。この電極が交差している他の強磁性層と
接触しないようにするため、交差点（トンネル接合部）
は両方の磁性層が交差する中央に設けてある。As shown in FIG. 10A, an arrangement has been proposed in which the easy magnetization axes of the first ferromagnetic layer and the second ferromagnetic layer are orthogonal to each other, so that a difference in the direction of magnetization with respect to an external magnetic field easily occurs. ing. In this arrangement, the first ferromagnetic layer and the second ferromagnetic layer intersect, and electrodes are formed at both ends of each ferromagnetic layer. Intersections (tunnel junctions) to prevent this electrode from contacting other ferromagnetic layers that intersect
Is provided at the center where both magnetic layers intersect.

【０００５】図１０(b)に強磁性トンネル素子の断面図
を示す。このような第１の強磁性層２／絶縁層（トンネ
ル障壁）３／第２の強磁性層４からなる接合が一つであ
る強磁性トンネル素子の場合、そのコンダクタンスは
（数１）のように示される。FIG. 10B is a sectional view of a ferromagnetic tunnel device. In the case of such a ferromagnetic tunnel element having one junction composed of the first ferromagnetic layer 2 / insulating layer (tunnel barrier) 3 / second ferromagnetic layer 4, the conductance is represented by (Equation 1). Is shown in

【０００６】[0006]

【数１】 (Equation 1)

【０００７】従ってフェルミ準位での状態密度はスピン
依存する。そのため第１の強磁性層と第２の強磁性層の
磁化の方向が平行にした場合と反平行にした場合とでは
トンネル・コンダクタンスが違ってくる。今、磁化を平
行にした場合と反平行にした場合のコンダクタンスをそ
れぞれＧ↑↑、Ｇ↑↓とすると式１よりトンネル磁気抵
抗効果（Tunneling Magnetoresistance略してＴＭＲ）
は（数２）で与えられる。Therefore, the density of states at the Fermi level is spin-dependent. Therefore, the tunnel conductance differs between when the magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer are parallel and antiparallel. Assuming that the conductances when the magnetization is made parallel and when the magnetization is made antiparallel are G ↑↑ and G よ り ↓, respectively, the tunneling magnetoresistance effect (TMR for Tunneling Magnetoresistance) is obtained from Equation 1.
Is given by (Equation 2).

【０００８】[0008]

【数２】 (Equation 2)

【０００９】以上より遷移金属強磁性体の場合ＴＭＲは
第１の強磁性層と第２の強磁性層のスピン分極そのもの
の積で表されることがわかっている（IEEE Transaction
s onMagnetics,Vol,MAG-18,No.2,March 1982）。From the above, it is known that in the case of a transition metal ferromagnetic material, TMR is represented by the product of the spin polarization itself of the first ferromagnetic layer and the second ferromagnetic layer (IEEE Transaction).
s onMagnetics, Vol, MAG-18, No. 2, March 1982).

【００１０】これより、良好なＴＭＲ効果（抵抗が低
く、抵抗変化率が大きい）を得るためには第１の強磁性
層、第２の強磁性層各々の磁性材料について分極率の高
い材料を用いたり、量子トンネル効果本来の特性を上げ
るしか方法はない。From the above, in order to obtain a good TMR effect (low resistance and high resistance change rate), it is necessary to use a material having a high polarizability for each of the first ferromagnetic layer and the second ferromagnetic layer. There is no other way but to increase the intrinsic characteristics of the quantum tunnel effect.

【００１１】しかし、遷移金属強磁性体で分極率の高い
材料で報告があるのはFeCo等であり、また良好なトンネ
ル効果が得られている絶縁体はNiO、Al2O3等である。こ
のように現在では、強磁性トンネル効果本来の特性をさ
らに上げるために使用できる材料は限られており、実際
に素子として使用する場合には、耐食、耐熱、構造等の
観点からなおさら困難となる。However, a transition metal ferromagnetic material having a high polarizability is reported to be FeCo or the like, and an insulator having a good tunnel effect is obtained from NiO, Al2O3 or the like. Thus, at present, the materials that can be used to further enhance the intrinsic characteristics of the ferromagnetic tunnel effect are limited, and when actually used as an element, it becomes even more difficult from the viewpoint of corrosion resistance, heat resistance, structure, and the like. .

【００１２】[0012]

【発明が解決しようとする課題】本発明は強磁性層／絶
縁層／強磁性層の基本構成を用いる強磁性トンネル接合
が本来持っている磁気抵抗効果特性を向上させ、高感度
で高密度記録に対応できる磁気抵抗効果素子および磁気
抵抗効果型ヘッドを実現するものである。SUMMARY OF THE INVENTION The present invention improves the magnetoresistance effect inherent in a ferromagnetic tunnel junction using the basic structure of ferromagnetic layer / insulating layer / ferromagnetic layer, and achieves high sensitivity and high density recording. To realize a magnetoresistive element and a magnetoresistive head capable of coping with the above.

【００１３】[0013]

【課題を解決するための手段】上記の課題を解決するた
めに、この発明の磁気抵抗効果素子、及び磁気抵抗効果
型ヘッドは以下のように構成されてる。In order to solve the above-mentioned problems, a magnetoresistive element and a magnetoresistive head according to the present invention are configured as follows.

【００１４】図１(a)に示すように、素子の基本構成は
基板１上に第１の強磁性膜2／絶縁層（トンネル障壁）3
／第２の強磁性膜4／絶縁膜（トンネル障壁）5／第３の
強磁性層6からなる。各強磁性層の磁化の方向は図１(b)
に示されるように第１の強磁性層2及び第３の強磁性層6
は磁化方向が信号磁界入力方向A1と垂直に、第２の強磁
性層4の磁化方向は信号磁界入力方向A1と平行となるよ
うに配置することで外部磁界の正負が判断可能となる。
第１の強磁性層2と第３の強磁性層3の磁化の向きは互い
に平行でも反平行でも検出回路が変わるだけでどちらで
もよい。また、その場合、第１の強磁性層２と第２の強
磁性層の間に流れるトンネル電流と第２の強磁性層と第
３の強磁性層の間に流れるトンネル電流の向きは互いに
同方向でも逆方向でも検出回路が変わるだけでどちらで
もよい。電極は第１、第２、第３の強磁性層に接続され
ている。第２の強磁性層4は電位を接地電位に落とすこ
とで、磁気抵抗効果素子の測定対象物との接触により発
生する静電気による破壊を抑制できる。As shown in FIG. 1A, the basic structure of the device is such that a first ferromagnetic film 2 / an insulating layer (tunnel barrier) 3
/ Second ferromagnetic film 4 / insulating film (tunnel barrier) 5 / third ferromagnetic layer 6. The direction of magnetization of each ferromagnetic layer is shown in Fig. 1 (b).
As shown in FIG. 3, the first ferromagnetic layer 2 and the third ferromagnetic layer 6
By arranging such that the magnetization direction is perpendicular to the signal magnetic field input direction A1 and the magnetization direction of the second ferromagnetic layer 4 is parallel to the signal magnetic field input direction A1, it is possible to determine whether the external magnetic field is positive or negative.
The magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 3 may be either parallel or antiparallel to each other, as long as the detection circuit is changed. In this case, the directions of the tunnel current flowing between the first ferromagnetic layer 2 and the second ferromagnetic layer and the direction of the tunnel current flowing between the second ferromagnetic layer and the third ferromagnetic layer are the same. Either direction or reverse direction may be used as long as the detection circuit is changed. The electrodes are connected to the first, second, and third ferromagnetic layers. By lowering the potential of the second ferromagnetic layer 4 to the ground potential, destruction due to static electricity generated by contact of the magnetoresistive element with the object to be measured can be suppressed.

【００１５】図２(a)、(b）、(c)、(d)に磁化の向きと
電源の配置及び電圧の印可方向、検出方式などの詳細を
示す。図２(a）、(b)に第１の強磁性層2と第３の強磁性
層6の磁化方向が平行である場合、図２(c)、(d)に第１
の強磁性層2と第３の強磁性層6の磁化方向が反平行の場
合を示す。2 (a), 2 (b), 2 (c) and 2 (d) show details of the magnetization direction, the arrangement of the power supply, the direction in which the voltage is applied, and the detection method. FIGS. 2A and 2B show cases where the magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are parallel, and FIGS.
3 shows a case where the magnetization directions of the ferromagnetic layer 2 and the third ferromagnetic layer 6 are antiparallel.

【００１６】図２(a)より第１の強磁性層2と第３の強磁
性層6の磁化方向は互いに平行で、磁界信号入力方向Ａ
１に対して垂直方向になるように配置されている。電圧
は第１の強磁性層2／絶縁層（トンネル障壁）3／第2の
強磁性層4からなる接合に対して第１の強磁性膜2が
(+)、第２の強磁性層4が(-)になるように電源7Aで印可
し、第２の強磁性層4／絶縁層（トンネル障壁）５／第
３の強磁性層6からなる接合に対して第２の強磁性層4が
（-)、第３の強磁性層6が(+)になるように電源7Bで印可
する。第１の強磁性層2と第２の強磁性層4の間の出力を
8A、第２の強磁性層2と第３の強磁性層6の間の出力を8B
とすると、出力8Aと8Bは図のように逆相で得られる。こ
れら8Aと8Bの出力を差動検出する。また、電圧を第１の
強磁性層2／絶縁層（トンネル障壁）3／第2の強磁性層4
からなる接合に対して第１の強磁性膜2が(-)、第２の強
磁性層4が(+)になるように電源7Aで印可し、第２の強磁
性層4／絶縁層（トンネル障壁）５／第３の強磁性層6か
らなる接合に対して第２の強磁性層4が（+)、第３の強
磁性層6が(-)になるように電源7Bで印可しても出力8Aと
8Bの符号が変わるだけで同様な出力が得られる。2A, the magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are parallel to each other, and the magnetic field signal input direction A
1 are arranged so as to be in a vertical direction. The voltage is applied to the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier) 3 / second ferromagnetic layer 4 by the first ferromagnetic film 2.
(+), The second ferromagnetic layer 4 is applied with a power source 7A so as to be (-), and is composed of the second ferromagnetic layer 4 / insulating layer (tunnel barrier) 5 / third ferromagnetic layer 6. The power is applied to the junction by the power supply 7B so that the second ferromagnetic layer 4 becomes (-) and the third ferromagnetic layer 6 becomes (+). The output between the first ferromagnetic layer 2 and the second ferromagnetic layer 4
8A, the output between the second ferromagnetic layer 2 and the third ferromagnetic layer 6 is 8B
Then, the outputs 8A and 8B are obtained in opposite phases as shown in the figure. These 8A and 8B outputs are differentially detected. The voltage is applied to the first ferromagnetic layer 2 / insulating layer (tunnel barrier) 3 / second ferromagnetic layer 4
The first ferromagnetic film 2 is applied to the junction composed of (−) and the second ferromagnetic layer 4 is applied (+) by the power supply 7A, and the second ferromagnetic layer 4 / insulating layer ( The power supply 7B applies the second ferromagnetic layer 4 to (+) and the third ferromagnetic layer 6 to (-) with respect to the junction composed of the tunnel barrier) 5 / third ferromagnetic layer 6. Even with output 8A
A similar output can be obtained only by changing the sign of 8B.

【００１７】図２(b)より第１の強磁性層2と第３の強磁
性層6の磁化方向は互いに平行で、磁界信号入力方向Ａ
１に対して垂直方向になるように配置されている。電圧
は第１の強磁性層2／絶縁層（トンネル障壁）3／第2の
強磁性層4からなる接合に対して第１の強磁性膜2が
(+)、第２の強磁性層4が(-)になるように電源7Aで印可
し、第２の強磁性層4／絶縁層（トンネル障壁）５／第
３の強磁性層6からなる接合に対して第２の強磁性層4が
（+)、第３の強磁性層6が(-)になるように電源7Bで印可
する。第１の強磁性層2と第２の強磁性層4の間の出力を
8A'、第２の強磁性層2と第３の強磁性層6の間の出力を8
B'とすると、出力8A'と8B'は図のように同相で得られ
る。これら8A'と8B'の出力を足して検出する。また、電
圧を第１の強磁性層2／絶縁層（トンネル障壁）3／第2
の強磁性層4からなる接合に対して第１の強磁性膜2が
(-)、第２の強磁性層4が(+)になるように電源7Aで印可
し、第２の強磁性層4／絶縁層（トンネル障壁）５／第
３の強磁性層6からなる接合に対して第２の強磁性層4が
（-)、第３の強磁性層6が(+)になるように電源7Bで印可
しても出力8A'と8B'の符号が変わるだけで同様な出力が
得られる。2B, the magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are parallel to each other, and the magnetic field signal input direction A
1 are arranged so as to be in a vertical direction. The voltage is applied to the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier) 3 / second ferromagnetic layer 4 by the first ferromagnetic film 2.
(+), The second ferromagnetic layer 4 is applied with a power source 7A so as to be (-), and is composed of the second ferromagnetic layer 4 / insulating layer (tunnel barrier) 5 / third ferromagnetic layer 6. The power is applied to the junction by the power supply 7B so that the second ferromagnetic layer 4 becomes (+) and the third ferromagnetic layer 6 becomes (-). The output between the first ferromagnetic layer 2 and the second ferromagnetic layer 4
8A ', the output between the second ferromagnetic layer 2 and the third ferromagnetic layer 6 is
Assuming B ', the outputs 8A' and 8B 'are obtained in phase as shown. The outputs of 8A 'and 8B' are added and detected. Further, the voltage is applied to the first ferromagnetic layer 2 / insulating layer (tunnel barrier) 3 / second
The first ferromagnetic film 2 is
(-), The second ferromagnetic layer 4 is applied with a power source 7A so as to be (+), and is composed of the second ferromagnetic layer 4 / insulating layer (tunnel barrier) 5 / third ferromagnetic layer 6. Even if the power supply 7B is applied so that the second ferromagnetic layer 4 becomes (-) and the third ferromagnetic layer 6 becomes (+) with respect to the junction, only the signs of the outputs 8A 'and 8B' change. A similar output is obtained.

【００１８】図２(c)より第１の強磁性層2と第３の強磁
性層6の磁化方向は互いに反平行で、磁界信号入力方向
Ａ１に対して垂直方向になるように配置されている。電
圧は第１の強磁性層2／絶縁層（トンネル障壁）3／第2
の強磁性層4からなる接合に対して第１の強磁性膜2が
(+)、第２の強磁性層4が(-)になるように電源7Cで印可
し、第２の強磁性層4／絶縁層（トンネル障壁）５／第
３の強磁性層6からなる接合に対して第２の強磁性層4が
（-)、第３の強磁性層6が(+)になるように電源7Dで印可
する。第１の強磁性層2と第２の強磁性層4の間の出力を
8C、第２の強磁性層2と第３の強磁性層6の間の出力を8D
とすると、出力8Cと8Dは図のように同相で得られる。こ
れら8Cと8Dの出力を足して検出する。また、電圧を第１
の強磁性層2／絶縁層（トンネル障壁）3／第2の強磁性
層4からなる接合に対して第１の強磁性膜2が(-)、第２
の強磁性層4が(+)になるように電源7Cで印可し、第２の
強磁性層4／絶縁層（トンネル障壁）５／第３の強磁性
層6からなる接合に対して第２の強磁性層4が（+)、第３
の強磁性層6が(-)になるように電源7Dで印可しても出力
8Cと8Dの符号が変わるだけで同様な出力が得られる。As shown in FIG. 2C, the magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are antiparallel to each other and are perpendicular to the magnetic field signal input direction A1. I have. The voltage is the first ferromagnetic layer 2 / insulating layer (tunnel barrier) 3 / second
The first ferromagnetic film 2 is
(+), The second ferromagnetic layer 4 is applied by the power supply 7C so as to become (-), and is composed of the second ferromagnetic layer 4 / insulating layer (tunnel barrier) 5 / third ferromagnetic layer 6. The power is applied to the junction by the power source 7D so that the second ferromagnetic layer 4 becomes (-) and the third ferromagnetic layer 6 becomes (+). The output between the first ferromagnetic layer 2 and the second ferromagnetic layer 4
8C, the output between the second ferromagnetic layer 2 and the third ferromagnetic layer 6 is 8D
Then, the outputs 8C and 8D are obtained in phase as shown in the figure. The outputs of 8C and 8D are added and detected. In addition, the voltage is set to the first
The ferromagnetic layer 2 / insulating layer (tunnel barrier) 3 / second ferromagnetic layer 4 has a first ferromagnetic film 2
Is applied by the power source 7C so that the ferromagnetic layer 4 becomes (+), and the second ferromagnetic layer 4 / insulating layer (tunnel barrier) 5 / third ferromagnetic layer 6 Ferromagnetic layer 4 of (+), the third
Output even if the power supply 7D is applied so that the ferromagnetic layer 6 becomes (-)
A similar output can be obtained only by changing the sign of 8C and 8D.

【００１９】図２(d)より第１の強磁性層2と第３の強磁
性層6の磁化方向は互いに反平行で、磁界信号入力方向
Ａ１に対して垂直方向になるように配置されている。電
圧は第１の強磁性層2／絶縁層（トンネル障壁）3／第2
の強磁性層4からなる接合に対して第１の強磁性膜2が
(+)、第２の強磁性層4が(-)になるように電源7Cで印可
し、第２の強磁性層4／絶縁層（トンネル障壁）５／第
３の強磁性層6からなる接合に対して第２の強磁性層4が
（+)、第３の強磁性層6が(-)になるように電源7Dで印可
する。第１の強磁性層2と第２の強磁性層4の間の出力を
8C'、第２の強磁性層2と第３の強磁性層6の間の出力を8
D'とすると、出力8C'と8D'は図のように逆相で得られ
る。これら8C'と8D'の出力を差動検出する。また、電圧
を第１の強磁性層2／絶縁層（トンネル障壁）3／第2の
強磁性層4からなる接合に対して第１の強磁性膜2が
(-)、第２の強磁性層4が(+)になるように電源7Cで印可
し、第２の強磁性層4／絶縁層（トンネル障壁）５／第
３の強磁性層6からなる接合に対して第２の強磁性層4が
（-)、第３の強磁性層6が(+)になるように電源7Dで印可
しても出力8C'と8D'の符号が変わるだけで同様な出力が
得られる。FIG. 2D shows that the magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are antiparallel to each other and are perpendicular to the magnetic field signal input direction A1. I have. The voltage is the first ferromagnetic layer 2 / insulating layer (tunnel barrier) 3 / second
The first ferromagnetic film 2 is
(+), The second ferromagnetic layer 4 is applied by the power supply 7C so as to become (-), and is composed of the second ferromagnetic layer 4 / insulating layer (tunnel barrier) 5 / third ferromagnetic layer 6. The power is applied to the junction by the power source 7D so that the second ferromagnetic layer 4 becomes (+) and the third ferromagnetic layer 6 becomes (-). The output between the first ferromagnetic layer 2 and the second ferromagnetic layer 4
8C ', the output between the second ferromagnetic layer 2 and the third ferromagnetic layer 6 is
Assuming D ', outputs 8C' and 8D 'are obtained in opposite phases as shown. The outputs of 8C 'and 8D' are differentially detected. Further, the first ferromagnetic film 2 applies a voltage to a junction composed of the first ferromagnetic layer 2 / insulating layer (tunnel barrier) 3 / second ferromagnetic layer 4.
(-), The second ferromagnetic layer 4 is applied by the power supply 7C so as to be (+), and is composed of the second ferromagnetic layer 4 / insulating layer (tunnel barrier) 5 / third ferromagnetic layer 6. Even if the power supply 7D is applied so that the second ferromagnetic layer 4 becomes (-) and the third ferromagnetic layer 6 becomes (+) with respect to the junction, only the signs of the outputs 8C 'and 8D' change. A similar output is obtained.

【００２０】図３(a)、(b)、(c)、(d)に入力として正弦
波の外部磁界を入れた場合の出力をそれぞれの場合につ
いて示す。FIGS. 3 (a), 3 (b), 3 (c) and 3 (d) show the output when a sine wave external magnetic field is applied as an input for each case.

【００２１】図３(a)より、前記第１の強磁性層2と第２
の強磁性層4の間のトンネル接合から得られる出力を8
a、前記第2の強磁性層4と第２の強磁性層6間のトンネル
接合から得られる出力を8bとすると差動検出器を用いて
得られた出力は9aとなる。この時、出力8a、8bの大きさ
をＡとすると差動検出された出力9aの大きさは約２Ａと
なる。FIG. 3A shows that the first ferromagnetic layer 2 and the second
Output from the tunnel junction between the ferromagnetic layers 4
a, Assuming that the output obtained from the tunnel junction between the second ferromagnetic layer 4 and the second ferromagnetic layer 6 is 8b, the output obtained by using the differential detector is 9a. At this time, assuming that the magnitude of the outputs 8a and 8b is A, the magnitude of the differentially detected output 9a is about 2A.

【００２２】また、図３(b)より、前記第１の強磁性層2
と第２の強磁性層4の間のトンネル接合から得られる出
力を8a'、前記第2の強磁性層4と第２の強磁性層6の間の
トンネル接合から得られる出力を8b'とすると、これら
二つの出力を足して得られた出力は9bとなる。この時、
出力8a'、8b'の大きさをＡとすると、これら二つの出力
を足して得られた出力9bの大きさは約２Ａとなる。FIG. 3B shows that the first ferromagnetic layer 2
The output obtained from the tunnel junction between the second ferromagnetic layer 4 and the second ferromagnetic layer 4 is 8a ', and the output obtained from the tunnel junction between the second ferromagnetic layer 4 and the second ferromagnetic layer 6 is 8b'. Then, the output obtained by adding these two outputs is 9b. At this time,
Assuming that the size of the outputs 8a 'and 8b' is A, the size of the output 9b obtained by adding these two outputs is about 2A.

【００２３】また、図３(c)より、前記第１の強磁性層2
と第２の強磁性層4の間のトンネル接合から得られる出
力を8c、前記第2の強磁性層4と第２の強磁性層6の間の
トンネル接合から得られる出力を8dとすると、これら二
つの出力を足して得られた出力は9cとなる。この時、出
力8a、8bの大きさをＡとすると、これら二つの出力を足
して得られた出力9cの大きさは約２Ａとなる。FIG. 3C shows that the first ferromagnetic layer 2
Assuming that an output obtained from a tunnel junction between the second ferromagnetic layer 4 and the second ferromagnetic layer 4 is 8c, and an output obtained from a tunnel junction between the second ferromagnetic layer 4 and the second ferromagnetic layer 6 is 8d, The output obtained by adding these two outputs is 9c. At this time, assuming that the magnitude of the outputs 8a and 8b is A, the magnitude of the output 9c obtained by adding these two outputs is about 2A.

【００２４】また、図３(d)より、前記第１の強磁性層2
と第２の強磁性層4の間のトンネル接合から得られる出
力を8c’、前記第2の強磁性層4と第２の強磁性層6間の
トンネル接合から得られる出力を8d'とすると差動検出
器を用いて得られた出力は9dとなる。この時、出力8
c'、8d'の大きさをＡとすると差動検出された出力9dの
大きさは約２Ａとなる。FIG. 3D shows that the first ferromagnetic layer 2
The output obtained from the tunnel junction between the second ferromagnetic layer 4 and the second ferromagnetic layer 4 is 8c ', and the output obtained from the tunnel junction between the second ferromagnetic layer 4 and the second ferromagnetic layer 6 is 8d'. The output obtained using the differential detector is 9d. At this time, output 8
Assuming that the magnitude of c ′ and 8d ′ is A, the magnitude of the output 9d that is differentially detected is about 2A.

【００２５】図３(a)、(c)の場合には、それぞれのトン
ネル接合から得られる出力を差動検出すれば良好な高出
力が得られる。一方、図３(b)、(d)の場合には、それぞ
れのトンネル接合から得られる出力を足し合わせば高出
力が得られる。図３(a)、(d)の場合にも、どちらか片方
の接合から得られる出力の符号を反転するような回路を
入れれば足し合わせた形の出力が得られる。また、図３
(b)、(c)の場合にも、どちらか片方の接合から得られる
出力の符号を反転するような回路を入れれば差動検出の
形の出力が得られる。以上述べたように、図３(a)、(b),
(c),(d)どの場合においても検出する回路を変える事に
よって同様な効果が得られる事は明きらかである。よっ
て、得られた出力9a、9b、9c、9dは接合が一つの場合に
得られる出力8a(8b)、8a'(8b')、8c(8d)、8c'(8d')に対
して、接合２層分の出力が得られる。In the case of FIGS. 3A and 3C, a good high output can be obtained by differentially detecting the output obtained from each tunnel junction. On the other hand, in the case of FIGS. 3B and 3D, a high output can be obtained by adding the outputs obtained from the respective tunnel junctions. 3 (a) and 3 (d), a combined output can be obtained by inserting a circuit for inverting the sign of the output obtained from either one of the junctions. FIG.
In the cases of (b) and (c), if a circuit for inverting the sign of the output obtained from either one of the junctions is provided, an output in the form of differential detection can be obtained. As described above, FIGS. 3 (a), (b),
It is clear that a similar effect can be obtained by changing the circuit to be detected in any of (c) and (d). Therefore, the obtained outputs 9a, 9b, 9c, 9d are the outputs 8a (8b), 8a '(8b'), 8c (8d), 8c '(8d') obtained when the junction is one. Outputs for two bonding layers are obtained.

【００２６】また、差動検出の場合には、動作点のズレ
による非対称波形の発生に関してもそれぞれの出力が保
証するように働き、線形領域の広い応答性が得られる。
また、メディアの突起と磁気抵抗膜の衝突が原因で起こ
る熱の発生で生じる磁気抵抗膜の抵抗変化（サーマルア
スペリティ）は信号に重畳する短時間のスパイク性ノイ
ズとなって観察されるが、前記の構成を用いると熱的外
乱は同相で、それぞれのトンネル接合部で発生するた
め、差動出力ではキャンセル抑圧されることになり、ノ
イズの影響を避けることが可能である。In the case of differential detection, the respective outputs also work to assure the generation of an asymmetric waveform due to the shift of the operating point, and a wide response in a linear region is obtained.
In addition, a change in resistance (thermal asperity) of the magnetoresistive film caused by generation of heat caused by collision between the protrusion of the medium and the magnetoresistive film is observed as a short-time spike noise superimposed on a signal. With the configuration described above, the thermal disturbance is in-phase and occurs at each tunnel junction, so that the cancellation is suppressed in the differential output, and the influence of noise can be avoided.

【００２７】磁化を固定する手段としては周知の方法に
より、図４(a)に示すように第１の強磁性層2の下と第３
の強磁性層6の上に反強磁性層10,10'を接合することで
磁化を一定方向とする事ができる。あるいは、図１(a)
で示される第１の強磁性層2と第３の強磁性層6に保磁力
の大きな材料を用いる。As a means for fixing the magnetization, the lower part of the first ferromagnetic layer 2 and the third part are fixed as shown in FIG.
By joining the antiferromagnetic layers 10 and 10 'on the ferromagnetic layer 6, the magnetization can be set to a fixed direction. Alternatively, FIG.
A material having a large coercive force is used for the first ferromagnetic layer 2 and the third ferromagnetic layer 6 indicated by.

【００２８】あるいは、図４(b)に示すように第１の強
磁性層2と第３の強磁性層6をそれぞれ金属人工格子（強
磁性層11／非磁性層12／強磁性層13）の構成にして、強
磁性層11と強磁性層13の磁化の方向が互いに交換結合に
より反平行状態を示す非磁性層12の膜厚を使用する。そ
の非磁性層12の膜厚として特に約１０Å前後を用いる。
この構成により強磁性層11と強磁性層13は非磁性層12を
介して交換結合をし、お互いの磁化方向が反平行になっ
た場合がエネルギー的に最低となるため安定状態とな
る。この反平行状態を変えるには非常に大きな磁場が必
要であるため第１の強磁性層2と第３の強磁性層6をこの
構成にすることで磁化の向きを固定することができる。Alternatively, as shown in FIG. 4B, the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are each formed by a metal artificial lattice (ferromagnetic layer 11 / nonmagnetic layer 12 / ferromagnetic layer 13). The thickness of the nonmagnetic layer 12 in which the directions of magnetization of the ferromagnetic layers 11 and 13 are antiparallel to each other by exchange coupling is used. The thickness of the nonmagnetic layer 12 is about 10 °.
With this configuration, the ferromagnetic layer 11 and the ferromagnetic layer 13 are exchange-coupled via the non-magnetic layer 12, and when the magnetization directions of each other become antiparallel, the energy becomes the lowest and the state is stable. Since a very large magnetic field is required to change the anti-parallel state, the first ferromagnetic layer 2 and the third ferromagnetic layer 6 have this configuration, so that the direction of magnetization can be fixed.

【００２９】あるいは、金属人工格子（強磁性層11／非
磁性層12／強磁性層13）の構成にして、交換結合が得ら
れない非磁性層厚の膜厚を用いて、強磁性層11と強磁性
膜13が互いに静磁結合する構成を用いる。また、強磁性
層11／絶縁層14／強磁性層13の構成でも静磁結合が得ら
れる。これらの構成により強磁性層11と強磁性層13が磁
気的に静磁結合して磁気回路を作るため、素子の端部に
現れて強磁性層11と強磁性層13の磁化の方向を不安定に
する磁極の発生を抑えられ、磁化の向きが固定される。Alternatively, the structure of the metal artificial lattice (ferromagnetic layer 11 / non-magnetic layer 12 / ferromagnetic layer 13) is used to make the ferromagnetic layer 11 And the ferromagnetic film 13 are magnetostatically coupled to each other. Also, a magnetostatic coupling can be obtained with the configuration of the ferromagnetic layer 11 / insulating layer 14 / ferromagnetic layer 13. With these configurations, the ferromagnetic layer 11 and the ferromagnetic layer 13 are magnetically magnetostatically coupled to each other to form a magnetic circuit. The generation of magnetic poles for stabilization is suppressed, and the direction of magnetization is fixed.

【００３０】トンネル接合部を形成する絶縁層（トンネ
ル障壁層）3及び絶縁層（トンネル障壁層）5としてはNi
O、SiO2、Al2O3等の酸化物が使用され、特にAl2O3がよ
い。また膜厚は約１５Å以下が望ましい。なお、絶縁層
（トンネル障壁層）3及び絶縁層（トンネル障壁層）5を
形成するNi、Si、Alなどの酸化層はトンネル障壁が形成
されているならば、全て酸化されている必要はない。The insulating layer (tunnel barrier layer) 3 and the insulating layer (tunnel barrier layer) 5 forming the tunnel junction are made of Ni.
Oxides such as O, SiO2, and Al2O3 are used, and Al2O3 is particularly preferable. Further, the thickness is desirably about 15 ° or less. The oxide layers such as Ni, Si, and Al forming the insulating layer (tunnel barrier layer) 3 and the insulating layer (tunnel barrier layer) 5 do not need to be oxidized as long as a tunnel barrier is formed. .

【００３１】磁気抵抗効果素子として磁性膜を用いる際
は、静磁エネルギーが最小になるように磁性膜内に形成
された複数の磁区の境界（磁壁）の移動がバウクハウゼ
ンノイズとなって現れるため、軟磁性膜の磁区構造磁区
構造を制御する必要がある。磁区制御、すなわち磁性膜
を単磁区化する方法として、IrMn、NiMn、NiO/α-Fe
2O3、PtPdMn、Ru4Rh11Mn85などの反強磁性膜15を磁性膜
の上に積層するか、あるいはCoCrTaやCoCrPtなどの硬質
磁性膜16を磁性膜の上に積層する方法がある。あるいは
IrMn、NiMn、NiO/α-Fe2O3、PtPdMn、Ru4Rh11Mn85など
の反強磁性膜15を磁性膜の両端に配置するか、あるいは
CoCrTaやCoCrPtなどの硬質磁性膜16を磁性膜の両端に配
置する方法がある。When a magnetic film is used as a magnetoresistive effect element, the movement of boundaries (domain walls) between a plurality of magnetic domains formed in the magnetic film so as to minimize the magnetostatic energy appears as Bauchhausen noise. Therefore, it is necessary to control the magnetic domain structure of the soft magnetic film. Magnetic domain control, that is, IrMn, NiMn, NiO / α-Fe
There is a method of laminating an antiferromagnetic film 15 such as 2 O 3 , PtPdMn, Ru 4 Rh 11 Mn 85 on a magnetic film, or laminating a hard magnetic film 16 such as CoCrTa or CoCrPt on a magnetic film. . Or
An antiferromagnetic film 15 such as IrMn, NiMn, NiO / α-Fe 2 O 3 , PtPdMn, Ru 4 Rh 11 Mn 85 is disposed at both ends of the magnetic film, or
There is a method in which hard magnetic films 16 such as CoCrTa and CoCrPt are arranged at both ends of the magnetic film.

【００３２】また、上述の磁気抵抗効果素子を用いてヘ
ッドに構成する場合には、図１１に示すように磁気抵抗
効果素子（図中ではＭＲ素子１０１）を再生ギャップ１
０２内に配置する。When a head is formed using the above-described magneto-resistance effect element, as shown in FIG. 11, the magneto-resistance effect element (MR element 101 in the figure) has a read gap of 1.
02.

【００３３】[0033]

【発明の実施の形態】以下、本発明の実施例の形態につ
いて、図１から図９を用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to FIGS.

【００３４】（実施の形態１）図５は本発明の磁気抵抗
効果素子の構成を示している。図において素子はシリコ
ン(Si）基板１上に第１の強磁性膜2として厚さ100Åの
コバルト(Co)層を磁場中でRFスパッタ装置を用いて作製
した後、メタルマスクを取り付け絶縁層3を形成するた
めのアルミウム(Al)を13Å同様にスパッタした。その後
チャンバー内に酸素を導入してRF逆スパッタを行い酸素
プラズマ放電によりアルミニウム(Al)を酸化させAl-AlO
Xとした。なお、Al層の酸化はAl層全てが酸化してなく
てもトンネル障壁ができていれば問題ない。そして別の
メタルマスクを取り付け第２の強磁性層4として厚さ100
Åパーマロイ(NiFe)を磁場中で第１に強磁性層2と磁化
の向きが直行するようにスパッタした後、絶縁層用のメ
タルマスクに代えて絶縁層5を形成するためのアルミニ
ウム(Al)をスパッタした。その後、絶縁層3の場合と同
様にチャンバー内に酸素を導入してRF逆スパッタを行い
酸素プラズマ放電によりアルミニウム(Al)を酸化させAl
-AlOXとした。なお、この場合もAl層の酸化はAl層全て
が酸化してなくてもトンネル障壁ができていれば問題な
い。そしてメタルマスクを取り代えて第３の強磁性層6
として厚さ100Åコバルト(Co)層を約100Å、磁場中で第
１の強磁性層の磁化の向きと平行となるようにRFスパッ
タ装置を用いて連続作製した。(Embodiment 1) FIG. 5 shows the configuration of a magnetoresistive element according to the present invention. In the figure, an element is formed by using a RF sputtering device in a magnetic field to form a 100-mm thick cobalt (Co) layer as a first ferromagnetic film 2 on a silicon (Si) substrate 1 and then attaching a metal mask to the insulating layer 3. Was formed by sputtering aluminum (Al) in the same manner as in Example 1. After that, oxygen is introduced into the chamber, RF reverse sputtering is performed, and aluminum (Al) is oxidized by oxygen plasma discharge to produce Al-AlO.
X The oxidation of the Al layer is not a problem even if the entire Al layer is not oxidized as long as a tunnel barrier is formed. Then, another metal mask is attached and the second ferromagnetic layer 4 has a thickness of 100
Å After permalloy (NiFe) is first sputtered in a magnetic field so that the direction of magnetization is perpendicular to the ferromagnetic layer 2, aluminum (Al) for forming the insulating layer 5 instead of the metal mask for the insulating layer is used. Was sputtered. After that, as in the case of the insulating layer 3, oxygen is introduced into the chamber, RF reverse sputtering is performed, and aluminum (Al) is oxidized by oxygen plasma discharge to form Al.
-AlO X. Also in this case, there is no problem in oxidizing the Al layer even if the entire Al layer is not oxidized as long as a tunnel barrier is formed. Then, the third ferromagnetic layer 6 is replaced by replacing the metal mask.
A cobalt (Co) layer having a thickness of about 100 ° was continuously formed using an RF sputtering apparatus in a magnetic field so as to be parallel to the direction of magnetization of the first ferromagnetic layer.

【００３５】これらの構成を用いて、図２(a)に示すよ
うに第２の強磁性層4を電気的に接地し、第１の強磁性
層2が(+)、第２の強磁性層4が(-)に、第３の強磁性層6
が(+)、第２の強磁性層4が(-)に電圧が印可されるよう
に接続した。そして磁界を+1KOe〜-1KOeまで変えて測定
した結果、図３(a)に示すように、第１の強磁性層2／絶
縁層（トンネル障壁層）3／第２の強磁性層4の接合で得
られた出力8Aと、第２の強磁性層4／絶縁層（トンネル
障壁層）5／第３の強磁性層5の接合で得られた出力8Bは
符号が反対でほぼ同じ出力が得られる。したがって、そ
れぞれの出力を差動検出すると接合２つ分の高出力が得
られる。なお、図２(b)に示すように第２の強磁性層4を
電気的に接地し、第１の強磁性層2が(-)、第２の強磁性
層4が(+)に、第３の強磁性層6が(-)、第２の強磁性層4
が(+)に電圧が印可されるように接続しても二つの接合
に流れるトンネル電流が実質的に逆方向で有れば得られ
る出力の符号が逆転するだけであって最終的に同様な効
果が得られる。By using these structures, the second ferromagnetic layer 4 is electrically grounded as shown in FIG. Layer 4 is (-), third ferromagnetic layer 6
(+), And the second ferromagnetic layer 4 was connected so that a voltage could be applied to (-). As a result of measurement while changing the magnetic field from +1 KOe to -1 KOe, as shown in FIG. 3A, the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 The output 8A obtained at the junction and the output 8B obtained at the junction of the second ferromagnetic layer 4 / insulating layer (tunnel barrier layer) 5 / third ferromagnetic layer 5 have almost the same sign and opposite outputs. can get. Therefore, when each output is differentially detected, a high output for two junctions is obtained. As shown in FIG. 2B, the second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (-), the second ferromagnetic layer 4 is (+), The third ferromagnetic layer 6 is (-), the second ferromagnetic layer 4
However, even if they are connected so that a voltage is applied to (+), if the tunnel current flowing through the two junctions is substantially in the opposite direction, only the sign of the obtained output is reversed, and finally the same The effect is obtained.

【００３６】（実施の形態２）実施の形態１と同様な構
成を用いて、図２(b)に示すように第２の強磁性層4を電
気的に接地し、第１の強磁性層2が(+)、第２の強磁性層
4が(-)に、第３の強磁性層6が(-)、第２の強磁性層4が
(+)に電圧が印可されるように接続した。そして磁界を+
1KOe〜-1KOeまで変えて測定した結果、図３(b)に示すよ
うに第１の強磁性層2／絶縁層（トンネル障壁層）3／第
２の強磁性層4の接合で得られた出力8A'と、第２の強磁
性層4／絶縁層（トンネル障壁層）5／第３の強磁性層5
の接合で得られた出力8B'は符号が同じでほぼ同じ出力
が得られる。したがって、それぞれの出力を足し合わせ
て検出すると接合２つ分の高出力が得られる。(Embodiment 2) The second ferromagnetic layer 4 is electrically grounded as shown in FIG. 2 is (+), 2nd ferromagnetic layer
4 is (-), the third ferromagnetic layer 6 is (-), and the second ferromagnetic layer 4 is
(+) Was connected so that voltage might be applied. And the magnetic field +
As a result of measurement with changing from 1 KOe to -1 KOe, as shown in FIG. 3 (b), it was obtained at the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4. Output 8A ', second ferromagnetic layer 4 / insulating layer (tunnel barrier layer) 5 / third ferromagnetic layer 5
The output 8B 'obtained by the above joining has the same sign and almost the same output is obtained. Therefore, if the outputs are added and detected, a high output for two junctions can be obtained.

【００３７】なお、第２の強磁性層4を電気的に接地
し、第１の強磁性層2が(-)、第２の強磁性層4が(+)に、
第３の強磁性層6が(+)、第２の強磁性層4が(-)に電圧が
印可されるように接続しても二つの接合に流れるトンネ
ル電流が実質的に同方向で有れば得られる出力の符号が
逆転するだけであって最終的に同様な効果が得られる。The second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (-), the second ferromagnetic layer 4 is (+),
Even if the third ferromagnetic layer 6 is connected to apply a voltage to (+) and the second ferromagnetic layer 4 is connected to apply a voltage to (-), the tunnel current flowing through the two junctions is substantially in the same direction. Then, only the sign of the obtained output is reversed, and the same effect is finally obtained.

【００３８】（実施の形態３）実施の形態１の構成にお
いて第１の強磁性層2と第３の強磁性層6の磁化の方向が
反平行になるように成膜した。これらの構成を用いて、
図２(c)第２の強磁性層4を電気的に接地し、第１の強磁
性層2が(+)、第２の強磁性層4が(-)に、第３の強磁性層
6が(+)、第２の強磁性層4が(-)に電圧が印可されるよう
に接続した。そして磁界を+1KOe〜-1KOeまで変えて測定
した結果、図３(c)に示すように第１の強磁性層2／絶縁
層（トンネル障壁層）3／第２の強磁性層4の接合で得ら
れた出力8Cと、第２の強磁性層4／絶縁層（トンネル障
壁層）5／第３の強磁性層5の接合で得られた出力8Dは符
号が同じでほぼ同じ出力が得られる。したがって、それ
ぞれの出力を足し合わせて検出すると接合２つ分の高出
力が得られる。(Third Embodiment) In the structure of the first embodiment, the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are formed such that the directions of magnetization are antiparallel. Using these configurations,
2 (c) The second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (+), the second ferromagnetic layer 4 is (-), and the third ferromagnetic layer 4 is (-).
6 was connected so that a voltage was applied to (+), and the second ferromagnetic layer 4 was connected so that a voltage was applied to (-). As a result of measurement while changing the magnetic field from +1 KOe to -1 KOe, the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 was obtained as shown in FIG. And the output 8D obtained by the junction of the second ferromagnetic layer 4 / insulating layer (tunnel barrier layer) 5 / third ferromagnetic layer 5 has the same sign and almost the same output. Can be Therefore, if the outputs are added and detected, a high output for two junctions can be obtained.

【００３９】なお、第２の強磁性層4を電気的に接地
し、第１の強磁性層2が(-)、第２の強磁性層4が(+)に、
第３の強磁性層6が(-)、第２の強磁性層4が(+)に電圧が
印可されるように接続しても二つの接合に流れるトンネ
ル電流が実質的に逆方向で有れば得られる出力の符号が
逆転するだけであって最終的に同様な効果が得られる。The second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (-), the second ferromagnetic layer 4 is (+),
Even if the third ferromagnetic layer 6 is connected so that a voltage is applied to (-) and the second ferromagnetic layer 4 is applied to (+), the tunnel current flowing through the two junctions is substantially opposite. Then, only the sign of the obtained output is reversed, and the same effect is finally obtained.

【００４０】（実施の形態４）実施の形態１の構成にお
いて第１の強磁性層2と第３の強磁性層6の磁化の方向が
反平行になるように成膜した。これらの構成を用いて、
図２(d)に示すように第２の強磁性層4を電気的に接地
し、第１の強磁性層2が(+)、第２の強磁性層4が(-)に、
第３の強磁性層6が(-)、第２の強磁性層4が(+)に電圧が
印可されるように接続した。そして磁界を+1KOe〜-1KOe
まで変えて測定した結果、図３(d)に示すように第１の
強磁性層2／絶縁層（トンネル障壁層）3／第２の強磁性
層4の接合で得られた出力8C'と、第２の強磁性層4／絶
縁層（トンネル障壁層）5／第３の強磁性層5の接合で得
られた出力8D'は符号が同じでほぼ同じ出力が得られ
る。したがってそれぞれの出力を差動検出して接合２つ
分の高出力が得られる。(Embodiment 4) In the structure of Embodiment 1, the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are formed such that the directions of magnetization are antiparallel. Using these configurations,
As shown in FIG. 2D, the second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (+), the second ferromagnetic layer 4 is (-),
The third ferromagnetic layer 6 was connected so that a voltage was applied to (-), and the second ferromagnetic layer 4 was connected so that a voltage was applied to (+). And the magnetic field is +1 KOe to -1 KOe
3D, the output 8C ′ obtained at the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4, as shown in FIG. The output 8D 'obtained at the junction of the second ferromagnetic layer 4 / insulating layer (tunnel barrier layer) 5 / third ferromagnetic layer 5 has the same sign and almost the same output. Therefore, each output is differentially detected, and a high output for two junctions is obtained.

【００４１】なお、第２の強磁性層4を電気的に接地
し、第１の強磁性層2が(-)、第２の強磁性層4が(+)に、
第３の強磁性層6が(+)、第２の強磁性層4が(-)に電圧が
印可されるように接続しても二つの接合に流れるトンネ
ル電流が実質的に同方向で有れば得られる出力の符号が
逆転するだけであって最終的に同様な効果が得られる。The second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (-), the second ferromagnetic layer 4 is (+),
Even if the third ferromagnetic layer 6 is connected to apply a voltage to (+) and the second ferromagnetic layer 4 is connected to apply a voltage to (-), the tunnel current flowing through the two junctions is substantially in the same direction. Then, only the sign of the obtained output is reversed, and the same effect is finally obtained.

【００４２】（実施の形態５）図６は本発明の磁気抵抗
効果素子の構成を示している。図において素子はシリコ
ン(Si）基板１上に反強磁性層（イリシ゛ュームマンカ゛ン(IrMn)
層）2aを約100Å、第１の強磁性膜2として厚さ100Åの
パーマロイ(NiFe)層を磁場中でRFスパッタ装置を用いて
連続作製した後、メタルマスクを取り付け絶縁層3を形
成するためのアルミウム(Al)を15Å同様にスパッタし
た。その後チャンバー内に酸素を導入してRF逆スパッタ
を行い酸素プラズマ放電によりアルミニウム(Al)を酸化
させAl-AlOXとした。(Embodiment 5) FIG. 6 shows the configuration of a magnetoresistive element according to the present invention. In the figure, an element is an antiferromagnetic layer (iridium man (IrMn)) on a silicon (Si) substrate 1.
Layer) 2a is made approximately 100 mm, and a permalloy (NiFe) layer having a thickness of 100 mm as the first ferromagnetic film 2 is continuously formed in a magnetic field using an RF sputtering apparatus, and then a metal mask is attached to form the insulating layer 3. Of aluminum (Al) was sputtered in the same manner as in the case of 15 °. Aluminum (Al) was oxidized Al-AlO X Subsequent introduced oxygen plasma discharge performed RF reverse sputtering oxygen into the chamber.

【００４３】なお、Al層の酸化はAl層全てが酸化してな
くてもトンネル障壁ができていれば問題ない。そして別
のメタルマスクを取り付け第２の強磁性層4として厚さ1
00Åパーマロイ(NiFe)を磁場中で第１に強磁性層2と磁
化の向きが直行するようにスパッタした後、絶縁層用の
メタルマスクに代えて絶縁層5を形成するためのアルミ
ニウム(Al)をスパッタした。その後、絶縁層3の場合と
同様にチャンバー内に酸素を導入してRF逆スパッタを行
い酸素プラズマ放電によりアルミニウム(Al)を酸化させ
Al-AlOXとした。The oxidation of the Al layer is not problematic as long as a tunnel barrier is formed even if the entire Al layer is not oxidized. Then, another metal mask is attached and a second ferromagnetic layer 4 having a thickness of 1
After sputtering permalloy (NiFe) in a magnetic field first so that the direction of magnetization is perpendicular to the ferromagnetic layer 2, aluminum (Al) for forming the insulating layer 5 instead of the metal mask for the insulating layer is used. Was sputtered. Then, as in the case of the insulating layer 3, oxygen is introduced into the chamber, RF reverse sputtering is performed, and aluminum (Al) is oxidized by oxygen plasma discharge.
Al-AlO X was used.

【００４４】なお、この場合もAl層の酸化はAl層全てが
酸化してなくてもトンネル障壁ができていれば問題な
い。そしてメタルマスクを取り代えて第３の強磁性層6
として厚さ100Åパーマロイ(NiFe)層、反強磁性層（イリシ
゛ュームマンカ゛ン(IrMn)層）6aを約100Å、磁場中で第１の強磁
性層の磁化の向きと等しくなるようにRFスパッタ装置を
用いて連続作製した。In this case, there is no problem in oxidizing the Al layer even if the entire Al layer is not oxidized as long as a tunnel barrier is formed. Then, the third ferromagnetic layer 6 is replaced by replacing the metal mask.
The RF sputter device is set up so that the thickness of the permalloy (NiFe) layer and the antiferromagnetic layer (IrMn) layer 6a are about 100 mm, and the direction of magnetization of the first ferromagnetic layer becomes equal to that in a magnetic field. It was manufactured continuously by using.

【００４５】これらの構成を用いて、図２(a)に示すよ
うに第２の強磁性層4を電気的に接地し、第１の強磁性
層2が(+)、第２の強磁性層4が(-)に、第３の強磁性層6
が(+)、第２の強磁性層4が(-)に電圧が印可されるよう
に接続した。そして磁界を+1KOe〜-1KOeまで変えて測定
した結果、図３(a)に示すように第１の強磁性層2／絶縁
層（トンネル障壁層）3／第２の強磁性層4の接合で得ら
れた出力8Aと、第２の強磁性層4／絶縁層（トンネル障
壁層）5／第３の強磁性層5の接合で得られた出力8Bが符
号が反対でほぼ同じ出力が得られる。したがって、それ
ぞれの出力を差動検出すると接合２つ分の高出力が得ら
れる。By using these structures, the second ferromagnetic layer 4 is electrically grounded as shown in FIG. Layer 4 is (-), third ferromagnetic layer 6
(+), And the second ferromagnetic layer 4 was connected so that a voltage could be applied to (-). As a result of measurement while changing the magnetic field from +1 KOe to -1 KOe, the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 was obtained as shown in FIG. And the output 8B obtained by the junction of the second ferromagnetic layer 4 / insulating layer (tunnel barrier layer) 5 / third ferromagnetic layer 5 is opposite in sign, and almost the same output is obtained. Can be Therefore, when each output is differentially detected, a high output for two junctions is obtained.

【００４６】なお、第２の強磁性層4を電気的に接地
し、第１の強磁性層2が(-)、第２の強磁性層4が(+)に、
第３の強磁性層6が(+)、第２の強磁性層4が(-)に電圧が
印可されるように接続しても二つの接合に流れるトンネ
ル電流が実質的に同方向で有れば得られる出力の符号が
逆転するだけであって最終的に同様な効果が得られる。The second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (-), the second ferromagnetic layer 4 is (+),
Even if the third ferromagnetic layer 6 is connected to apply a voltage to (+) and the second ferromagnetic layer 4 is connected to apply a voltage to (-), the tunnel current flowing through the two junctions is substantially in the same direction. Then, only the sign of the obtained output is reversed, and the same effect is finally obtained.

【００４７】また、反強磁性層2a、6aを付随することに
より第１の強磁性層2と第３の強磁性層6の磁化方向がよ
り安定に固定され安定した出力が得られる。なお、この
効果は実施の形態２〜４の構成に反強磁性層2a及び反強
磁性層6aを用いた場合でも効果があることは明きらかで
ある。Further, by attaching the antiferromagnetic layers 2a and 6a, the magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are more stably fixed, and a stable output can be obtained. It is apparent that this effect is effective even when the antiferromagnetic layer 2a and the antiferromagnetic layer 6a are used in the configurations of the second to fourth embodiments.

【００４８】（実施の形態６）図７は本発明の磁気抵抗
効果素子の構成を示している。図において素子はシリコ
ン(Si）基板１上に第１の強磁性膜2として(Co/Cu/Co)層
を磁場中でRFスパッタ装置を用いて連続作製した後、メ
タルマスクを取り付け絶縁層（トンネル障壁層）3を形
成するためのアルミウム(Al)を15Å同様にスパッタし
た。その後チャンバー内に酸素を導入してRF逆スパッタ
を行い酸素プラズマ放電によりアルミニウム(Al)を酸化
させAl-AlOXとした。(Embodiment 6) FIG. 7 shows the configuration of a magnetoresistive element according to the present invention. In the figure, after a (Co / Cu / Co) layer is continuously formed as a first ferromagnetic film 2 on a silicon (Si) substrate 1 using a RF sputtering apparatus in a magnetic field, a metal mask is attached to the insulating layer ( Aluminum (Al) for forming the tunnel barrier layer) 3 was sputtered in the same manner as in the case of 15 °. Aluminum (Al) was oxidized Al-AlO X Subsequent introduced oxygen plasma discharge performed RF reverse sputtering oxygen into the chamber.

【００４９】なお、Al層の酸化はAl層全てが酸化してな
くてもトンネル障壁ができていれば問題ない。そして別
のメタルマスクを取り付け第２の強磁性層4として厚さ1
00Åパーマロイ(NiFe)を磁場中で第１に強磁性層2と磁
化の向きが直行するようにスパッタした後、絶縁層用の
メタルマスクに代えて絶縁層5を形成するためのアルミ
ニウム(Al)をスパッタした。その後、絶縁層3の場合と
同様にチャンバー内に酸素を導入してRF逆スパッタを行
い酸素プラズマ放電によりアルミニウム(Al)を酸化させ
Al-AlOXとした。なお、この場合もAl層の酸化はAl層全
てが酸化してなくてもトンネル障壁ができていれば問題
ない。そしてメタルマスクを取り代えて第３の強磁性層
6として、(Co/Cu/Co)層を磁場中で第１の強磁性層の磁
化の向きと平行となるようにRFスパッタ装置を用いて連
続作製した。It should be noted that there is no problem in oxidizing the Al layer even if the entire Al layer is not oxidized as long as a tunnel barrier is formed. Then, another metal mask is attached and a second ferromagnetic layer 4 having a thickness of 1
After sputtering permalloy (NiFe) in a magnetic field first so that the direction of magnetization is perpendicular to the ferromagnetic layer 2, aluminum (Al) for forming the insulating layer 5 instead of the metal mask for the insulating layer is used. Was sputtered. Then, as in the case of the insulating layer 3, oxygen is introduced into the chamber, RF reverse sputtering is performed, and aluminum (Al) is oxidized by oxygen plasma discharge.
Al-AlO X was used. Also in this case, there is no problem in oxidizing the Al layer even if the entire Al layer is not oxidized as long as a tunnel barrier is formed. And replacing the metal mask with a third ferromagnetic layer
As No. 6, a (Co / Cu / Co) layer was continuously produced using an RF sputtering apparatus in a magnetic field so as to be parallel to the direction of magnetization of the first ferromagnetic layer.

【００５０】これらの構成を用いて、図２(a)に示すよ
うに第２の強磁性層4を電気的に接地し、第１の強磁性
層2が(+)、第２の強磁性層4が(-)に、第３の強磁性層6
が(+)、第２の強磁性層4が(-)に電圧が印可されるよう
に接続した。そして磁界を+1KOe〜-1KOeまで変えて測定
した結果、図3(a)に示すように第１の強磁性層2／絶縁
層（トンネル障壁層）3／第２の強磁性層4の接合で得ら
れた出力8Aと、第２の強磁性層4／絶縁層（トンネル障
壁層）5／第３の強磁性層5の接合で得られた出力8Bが符
号が反対でほぼ同じ出力が得られる。したがって、それ
ぞれの出力を差動検出すると接合２つ分の高出力が得ら
れる。By using these structures, the second ferromagnetic layer 4 is electrically grounded as shown in FIG. Layer 4 is (-), third ferromagnetic layer 6
(+), And the second ferromagnetic layer 4 was connected so that a voltage could be applied to (-). As a result of measurement while changing the magnetic field from +1 KOe to -1 KOe, as shown in FIG. 3A, the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 And the output 8B obtained by the junction of the second ferromagnetic layer 4 / insulating layer (tunnel barrier layer) 5 / third ferromagnetic layer 5 is opposite in sign, and almost the same output is obtained. Can be Therefore, when each output is differentially detected, a high output for two junctions is obtained.

【００５１】なお、第２の強磁性層4を電気的に接地
し、第１の強磁性層2が(-)、第２の強磁性層4が(+)に、
第３の強磁性層6が(+)、第２の強磁性層4が(-)に電圧が
印可されるように接続しても二つの接合に流れるトンネ
ル電流が実質的に同方向で有れば得られる出力の符号が
逆転するだけであって最終的に同様な効果が得られる。
また、第１の強磁性層2と第３の強磁性層6を交換結合が
得られる(Co/Cu/Co)の構造にする事で第１の強磁性層2
と第３の強磁性層6の磁化方向がより安定に固定され安
定した出力が得られる。なお、この効果は実施の形態２
〜４の構成に(Co/Cu/Co)の構造の第１の強磁性層2と第
３の強磁性層6を用いた場合でも効果があることは明き
らかである。The second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (-), the second ferromagnetic layer 4 is (+),
Even if the third ferromagnetic layer 6 is connected to apply a voltage to (+) and the second ferromagnetic layer 4 is connected to apply a voltage to (-), the tunnel current flowing through the two junctions is substantially in the same direction. Then, only the sign of the obtained output is reversed, and the same effect is finally obtained.
In addition, the first ferromagnetic layer 2 and the third ferromagnetic layer 6 have a (Co / Cu / Co) structure in which exchange coupling can be obtained, so that the first ferromagnetic layer 2
The magnetization direction of the third ferromagnetic layer 6 is more stably fixed, and a stable output is obtained. Note that this effect is obtained in the second embodiment.
It is apparent that the effect is obtained even when the first ferromagnetic layer 2 and the third ferromagnetic layer 6 having the structure of (Co / Cu / Co) are used in the structures of (4) to (4).

【００５２】（実施の形態７）図８は本発明の磁気抵抗
効果素子の構成を示している。図において素子はシリコ
ン(Si）基板１上に第１の強磁性膜2として(Co/SiO2/Co)
層を磁場中でRFスパッタ装置を用いて連続作製した後、
メタルマスクを取り付け絶縁層（トンネル障壁層）3を
形成するためのアルミウム(Al)を15Å同様にスパッタし
た。その後チャンバー内に酸素を導入してRF逆スパッタ
を行い酸素プラズマ放電によりアルミニウム(Al)を酸化
させAl-AlOXとした。なお、Al層の酸化はAl層全てが酸
化してなくてもトンネル障壁ができていれば問題ない。(Embodiment 7) FIG. 8 shows a configuration of a magnetoresistive element of the present invention. In the figure, the element is (Co / SiO 2 / Co) as a first ferromagnetic film 2 on a silicon (Si) substrate 1.
After continuously producing layers using RF sputtering equipment in a magnetic field,
Aluminum (Al) for forming an insulating layer (tunnel barrier layer) 3 with a metal mask attached was sputtered in the same manner as in the case of 15 °. Aluminum (Al) was oxidized Al-AlO X Subsequent introduced oxygen plasma discharge performed RF reverse sputtering oxygen into the chamber. The oxidation of the Al layer is not a problem even if the entire Al layer is not oxidized as long as a tunnel barrier is formed.

【００５３】そして別のメタルマスクを取り付け第２の
強磁性層4として厚さ100Åパーマロイ(NiFe)を磁場中で
第１に強磁性層2と磁化の向きが直行するようにスパッ
タした後、絶縁層用のメタルマスクに代えて絶縁層5を
形成するためのアルミニウム(Al)をスパッタした。その
後、絶縁層3の場合と同様にチャンバー内に酸素を導入
してRF逆スパッタを行い酸素プラズマ放電によりアルミ
ニウム(Al)を酸化させAl-AlOXとした。Then, another metal mask is attached, and as a second ferromagnetic layer 4, a 100-μm thick permalloy (NiFe) is sputtered in a magnetic field so that the direction of magnetization is perpendicular to the first ferromagnetic layer 2. Instead of the layer metal mask, aluminum (Al) for forming the insulating layer 5 was sputtered. Then the Al-AlO X Aluminum (Al) is oxidized by oxygen plasma discharge performed RF reverse sputtering by introducing oxygen into the chamber as in the case of the insulating layer 3.

【００５４】なお、この場合もAl層の酸化はAl層全てが
酸化してなくてもトンネル障壁ができていれば問題な
い。そしてメタルマスクを取り代えて第３の強磁性層6
として、(Co/SiO2/Co)層を磁場中で第１の強磁性層の磁
化の向きと平行となるようにRFスパッタ装置を用いて連
続作製した。In this case as well, there is no problem in oxidizing the Al layer even if the entire Al layer is not oxidized as long as a tunnel barrier is formed. Then, the third ferromagnetic layer 6 is replaced by replacing the metal mask.
The (Co / SiO 2 / Co) layer was continuously produced using an RF sputtering apparatus in a magnetic field so as to be parallel to the direction of magnetization of the first ferromagnetic layer.

【００５５】これらの構成を用いて、図２(a)に示すよ
うに第２の強磁性層4を電気的に接地し、第１の強磁性
層2が(+)、第２の強磁性層4が(-)に、第３の強磁性層6
が(+)、第２の強磁性層4が(-)に電圧が印可されるよう
に接続した。そして磁界を+1KOe〜-1KOeまで変えて測定
した結果、図３(a)に示すように第１の強磁性層2／絶縁
層（トンネル障壁層）3／第２の強磁性層4の接合で得ら
れた出力8Aと、第２の強磁性層4／絶縁層（トンネル障
壁層）5／第３の強磁性層5の接合で得られた出力8Bが符
号が反対でほぼ同じ出力が得られる。したがって、それ
ぞれの出力を差動検出すると接合２つ分の高出力が得ら
れる。Using these structures, as shown in FIG. 2A, the second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (+), the second ferromagnetic layer is Layer 4 is (-), third ferromagnetic layer 6
(+), And the second ferromagnetic layer 4 was connected so that a voltage could be applied to (-). As a result of measurement while changing the magnetic field from +1 KOe to -1 KOe, the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 was obtained as shown in FIG. And the output 8B obtained by the junction of the second ferromagnetic layer 4 / insulating layer (tunnel barrier layer) 5 / third ferromagnetic layer 5 is opposite in sign, and almost the same output is obtained. Can be Therefore, when each output is differentially detected, a high output for two junctions is obtained.

【００５６】なお、第２の強磁性層4を電気的に接地
し、第１の強磁性層2が(-)、第２の強磁性層4が(+)に、
第３の強磁性層6が(+)、第２の強磁性層4が(-)に電圧が
印可されるように接続しても二つの接合に流れるトンネ
ル電流が実質的に同方向で有れば得られる出力の符号が
逆転するだけであって最終的に同様な効果が得られる。It should be noted that the second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (-), the second ferromagnetic layer 4 is (+),
Even if the third ferromagnetic layer 6 is connected to apply a voltage to (+) and the second ferromagnetic layer 4 is connected to apply a voltage to (-), the tunnel current flowing through the two junctions is substantially in the same direction. Then, only the sign of the obtained output is reversed, and the same effect is finally obtained.

【００５７】また、第１の強磁性層2と第３の強磁性層6
を静磁結合が得られる(Co/SiO2/Co)の構造にする事で第
１の強磁性層2と第３の強磁性層6の磁化方向がより安定
に固定され安定した出力が得られる。Further, the first ferromagnetic layer 2 and the third ferromagnetic layer 6
Has a (Co / SiO 2 / Co) structure in which the magnetostatic coupling can be obtained, the magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are more stably fixed, and a stable output can be obtained. Can be

【００５８】なお、この効果は実施の形態２〜４の構成
に(Co/SiO2/Co)の構造の第１の強磁性層2と第３の強磁
性層6を用いた場合でも効果があることは明きらかであ
る。This effect can be obtained even when the first ferromagnetic layer 2 and the third ferromagnetic layer 6 having the structure of (Co / SiO 2 / Co) are used in the structures of the second to fourth embodiments. Something is clear.

【００５９】（実施の形態８）図９(a)及び図１１は本
発明の磁気抵抗効果型ヘッドの構成を示している。図９
において素子はシリコン(Si）基板１上に反強磁性層10
としてイリシ゛ュームマンカ゛ン(IrMn)を約100Å、第１の強磁性膜2
として厚さ100Åのパーマロイ(NiFe)層の磁化方向が信
号磁界入力方向A1に対して垂直方向になるように磁場中
でRFスパッタ装置を用いて連続成膜した後、絶縁層3を
形成するためのアルミウム(Al)を13Å同様にスパッタし
た。(Embodiment 8) FIGS. 9A and 11 show the configuration of a magnetoresistive head according to the present invention. FIG.
In the device, an antiferromagnetic layer 10 is formed on a silicon (Si) substrate 1.
About 100 mm of iris mankan (IrMn) as the first ferromagnetic film 2
To form the insulating layer 3 after continuous film formation using a RF sputtering apparatus in a magnetic field such that the magnetization direction of the 100 mm thick permalloy (NiFe) layer is perpendicular to the signal magnetic field input direction A1 Of aluminum (Al) was sputtered similarly to 13 °.

【００６０】その後、チャンバー内に酸素を導入してRF
逆スパッタを行い酸素プラズマ放電によりアルミニウム
(Al)を酸化させAl-AlOXとした。そして、第２の強磁性
層4として厚さ100Åパーマロイ(NiFe)を磁場中で第１に
強磁性層2と磁化の向きが直行するようスパッタし、そ
の上に絶縁層5を形成するためのアルミニウム(Al)をス
パッタした。その後、絶縁層3の場合と同様にチャンバ
ー内に酸素を導入してRF逆スパッタを行い酸素プラズマ
放電によりアルミニウム(Al)を酸化させAl-AlOXとし
た。第３の強磁性層6として厚さ100Åパーマロイ(NiFe)
層、イリシ゛ュームマンカ゛ン(IrMn)層10'を約100Å、磁場中で第１
の強磁性層の磁化の向きと平行となるようにRFスパッタ
装置を用いて連続作製した。電極はCr/Auを約2000Åス
パッタし、それぞれの素子部と電極ははフォトリソグラ
フィーを用いて加工した。Thereafter, oxygen is introduced into the chamber to
Reverse sputtering and oxygen plasma discharge for aluminum
(Al) is oxidized to the Al-AlO X. Then, as the second ferromagnetic layer 4, a 100 ° -thick permalloy (NiFe) is sputtered in a magnetic field so that the direction of magnetization is perpendicular to the first ferromagnetic layer 2, and an insulating layer 5 is formed thereon. Aluminum (Al) was sputtered. Then the Al-AlO X Aluminum (Al) is oxidized by oxygen plasma discharge performed RF reverse sputtering by introducing oxygen into the chamber as in the case of the insulating layer 3. 100 mm thick permalloy (NiFe) as the third ferromagnetic layer 6
Layer, IrMn layer (IrMn) layer 10 '
Were manufactured continuously using an RF sputtering apparatus so as to be parallel to the magnetization direction of the ferromagnetic layer. The electrodes were sputtered with Cr / Au for about 2000 mm, and the respective element portions and electrodes were processed using photolithography.

【００６１】これらの構成を用いて、第２の強磁性層4
を電気的に接地し、第１の強磁性層2が(+)、第２の強磁
性層4が(-)に、第３の強磁性層6が(+)、第２の強磁性層
4が(-)に電圧が印可されるように接続した。Using these structures, the second ferromagnetic layer 4
Are electrically grounded, the first ferromagnetic layer 2 is (+), the second ferromagnetic layer 4 is (-), the third ferromagnetic layer 6 is (+), and the second ferromagnetic layer is (+).
4 was connected so that a voltage could be applied to (-).

【００６２】そして磁界を+10Oe〜-10Oeまで変えて測定
した結果、第１の強磁性層2／絶縁層（トンネル障壁
層）3／第２の強磁性層4の接合で得られた出力8Aと、第
２の強磁性層4／絶縁層（トンネル障壁層）5／第３の強
磁性層5の接合で得られた出力8Bが符号が反対でほぼ同
じ出力が得られる。したがってそれぞれの出力を差動検
出すると接合２つ分の高出力が得られる。As a result of measurement while changing the magnetic field from +10 Oe to −10 Oe, the output 8A obtained at the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 was obtained. And the output 8B obtained at the junction of the second ferromagnetic layer 4 / insulating layer (tunnel barrier layer) 5 / third ferromagnetic layer 5 is opposite in sign and almost the same output is obtained. Therefore, when each output is differentially detected, a high output for two junctions can be obtained.

【００６３】このようにして作った磁気抵抗素子（ＭＲ
素子１０１）を図１１に示す様に再生ギャップ内に配置
してハードディスク用ヘッドを構成する。The magnetoresistive element (MR
The element 101) is arranged in the reproduction gap as shown in FIG. 11 to form a hard disk head.

【００６４】なお、第２の強磁性層4を電気的に接地
し、第１の強磁性層2が(-)、第２の強磁性層4が(+)に、
第３の強磁性層6が(+)、第２の強磁性層4が(-)に電圧が
印可されるように接続しても二つの接合に流れるトンネ
ル電流が実質的に同方向で有れば得られる出力の符号が
逆転するだけであって最終的に同様な効果が得られる。
また、第１の強磁性層2と第３の強磁性層6を静磁結合が
得られる(Co/SiO2/Co)の構造にする事で第１の強磁性層
2と第３の強磁性層6の磁化方向がより安定に固定され安
定した出力が得られる。The second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (-), the second ferromagnetic layer 4 is (+),
Even if the third ferromagnetic layer 6 is connected to apply a voltage to (+) and the second ferromagnetic layer 4 is connected to apply a voltage to (-), the tunnel current flowing through the two junctions is substantially in the same direction. Then, only the sign of the obtained output is reversed, and the same effect is finally obtained.
Further, the first ferromagnetic layer 2 and the third ferromagnetic layer 6 have a (Co / SiO 2 / Co) structure in which magnetostatic coupling can be obtained, so that the first ferromagnetic layer
The magnetization directions of the second and third ferromagnetic layers 6 are more stably fixed, and a stable output is obtained.

【００６５】（実施の形態９）図９(b)は本発明の磁気
抵抗効果型ヘッドの構成を示している。図において素子
はシリコン(Si）基板１上に反強磁性層10としてイリシ゛ューム
マンカ゛ン(IrMn)を約100Å、第１の強磁性膜2として厚さ100
Åのパーマロイ(NiFe)層の磁化方向が信号磁界入力方向
A1に対して垂直方向になるように磁場中でRFスパッタ装
置を用いて連続成膜した後、絶縁層3を形成するための
アルミウム(Al)を13Å同様にスパッタした。その後、チ
ャンバー内に酸素を導入してRF逆スパッタを行い酸素プ
ラズマ放電によりアルミニウム(Al)を酸化させAl-AlOX
とした。そして、第２の強磁性層4として厚さ100Åパー
マロイ(NiFe)を磁場中で第１に強磁性層2と磁化の向き
が直行するようスパッタし、その上に絶縁層5を形成す
るためのアルミニウム(Al)をスパッタした。その後、絶
縁層3の場合と同様にチャンバー内に酸素を導入してRF
逆スパッタを行い酸素プラズマ放電によりアルミニウム
(Al)を酸化させAl-AlOXとした。第３の強磁性層6として
厚さ100Åパーマロイ(NiFe)層、イリシ゛ュームマンカ゛ン(IrMn)層1
0'を約100Å、磁場中で第１の強磁性層の磁化の向きと
反平行となるようにRFスパッタ装置を用いて連続作製し
た。電極はCr/Auを約2000Åスパッタし、それぞれの素
子部と電極ははフォトリソグラフィーを用いて加工し
た。(Embodiment 9) FIG. 9B shows the configuration of a magnetoresistive head according to the present invention. In the figure, an element is made of iridium mankan (IrMn) as an antiferromagnetic layer 10 on a silicon (Si) substrate 1 with a thickness of about 100 mm and a first ferromagnetic film 2 with a thickness of 100 mm.
The magnetization direction of the マ permalloy (NiFe) layer is the signal magnetic field input direction
After continuous film formation using a RF sputtering apparatus in a magnetic field so as to be perpendicular to A1, aluminum (Al) for forming the insulating layer 3 was sputtered in the same manner as in the case of 13 °. Then, oxygen is introduced into the chamber, RF reverse sputtering is performed, and aluminum (Al) is oxidized by oxygen plasma discharge to produce Al-AlO x.
And Then, as the second ferromagnetic layer 4, a 100 ° -thick permalloy (NiFe) is sputtered in a magnetic field so that the direction of magnetization is perpendicular to the first ferromagnetic layer 2, and an insulating layer 5 is formed thereon. Aluminum (Al) was sputtered. After that, oxygen is introduced into the chamber as in the case of the insulating layer 3 and RF is performed.
Reverse sputtering and oxygen plasma discharge for aluminum
(Al) is oxidized to the Al-AlO X. As the third ferromagnetic layer 6, a 100-mm-thick permalloy (NiFe) layer, an iris mankan (IrMn) layer 1
0 ′ was about 100 °, and was continuously manufactured using an RF sputtering apparatus in a magnetic field so as to be antiparallel to the direction of magnetization of the first ferromagnetic layer. The electrodes were sputtered with Cr / Au for about 2000 mm, and the respective element portions and electrodes were processed using photolithography.

【００６６】これらの構成を用いて、図２(d)に示され
るように第２の強磁性層4を電気的に接地し、第１の強
磁性層2が(+)、第２の強磁性層4が(-)に、第３の強磁性
層6が(-)、第２の強磁性層4が(+)に電圧が印可されるよ
うに接続した。そして磁界を+10Oe〜-10Oeまで変えて測
定した結果、図３(d)に示すように第１の強磁性層2／絶
縁層（トンネル障壁層）3／第２の強磁性層4の接合で得
られた出力8C'と、第２の強磁性層4／絶縁層（トンネル
障壁層）5／第３の強磁性層5の接合で得られた出力8D'
が符号が反対でほぼ同じ出力が得られる。したがって、
それぞれの出力を差動検出すると接合２つ分の高出力が
得られる。Using these structures, the second ferromagnetic layer 4 is electrically grounded as shown in FIG. 2D, the first ferromagnetic layer 2 is (+), and the second The magnetic layer 4 was connected to (-), the third ferromagnetic layer 6 was connected to (-), and the second ferromagnetic layer 4 was connected to (+) so that a voltage was applied. As a result of measurement while changing the magnetic field from +10 Oe to -10 Oe, the junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 was obtained as shown in FIG. And the output 8D 'obtained at the junction of the second ferromagnetic layer 4 / insulating layer (tunnel barrier layer) 5 / third ferromagnetic layer 5
Have opposite signs, and almost the same output is obtained. Therefore,
When each output is differentially detected, a high output for two junctions is obtained.

【００６７】なお、第２の強磁性層4を電気的に接地
し、第１の強磁性層2が(+)、第２の強磁性層4が(-)に、
第３の強磁性層6が(+)、第２の強磁性層4が(-)に電圧が
印可されるように接続しても二つの接合に流れるトンネ
ル電流が実質的に逆方向で有れば得られる出力の符号が
逆転するだけであって最終的に同様な効果が得られる。
また、第１の強磁性層2と第３の強磁性層6を静磁結合が
得られる(Co/SiO2/Co)の構造にする事で第１の強磁性層
2と第３の強磁性層6の磁化方向がより安定に固定され安
定した出力が得られる。The second ferromagnetic layer 4 is electrically grounded, the first ferromagnetic layer 2 is (+), the second ferromagnetic layer 4 is (-),
Even if the third ferromagnetic layer 6 is connected so that a voltage is applied to (+) and the second ferromagnetic layer 4 is connected so that a voltage is applied to (-), the tunnel current flowing through the two junctions is substantially opposite. Then, only the sign of the obtained output is reversed, and the same effect is finally obtained.
Further, the first ferromagnetic layer 2 and the third ferromagnetic layer 6 have a (Co / SiO 2 / Co) structure in which magnetostatic coupling can be obtained, so that the first ferromagnetic layer
The magnetization directions of the second and third ferromagnetic layers 6 are more stably fixed, and a stable output is obtained.

【００６８】[0068]

【実施例】以下具体的な実施例により、この発明の効果
の説明を行う。EXAMPLES The effects of the present invention will be described below with reference to specific examples.

【００６９】（実施例１）スパッタ装置を用いて以下に
示した構成の磁気抵抗効果素子をSi基板上に作成した。Example 1 A magnetoresistive element having the following configuration was formed on a Si substrate using a sputtering apparatus.

【００７０】[Co(100)/Al-AlOx(13)/Ni0.8Fe0.2(100)/A
l-AlOX(13)/Co(100)] 但し、( )内の単位はオンク゛ストロームである。[Co (100) / Al-AlOx (13) / Ni 0.8 Fe 0.2 (100) / A
l-AlO X (13) / Co (100)] where the unit in parentheses is on-crystal.

【００７１】第１の強磁性層Co及び第３の強磁性層Coの
磁化方向が互いに同方向を向くように磁場中スパッタを
行い、第２の強磁性層NiFeの磁化方向がCoと直交するよ
うに磁場中スパッタを行った。電極をCo/Al-AlOX/NiF
e、NiFe/Al-AlOX/Coのそれぞれの接合に対して接続して
磁気抵抗効果の測定を行った。磁気抵抗効果の測定は磁
界を軟磁性を示すNiFe膜の磁化困難軸方向に印加して測
定した。この時、電圧は第１の強磁性層が(+)、第２の
強磁性層が(-)と第３の強磁性層が(+)、第２の強磁性層
が(-)になるように印可した。この結果、Co/Al-AlOX/Ni
Fe、NiFe/Al-AlOX/Coそれぞれの接合から抵抗変化率が
１９％、１７％の結果が得られた。また、交流で磁界を
印可して差動検出したところ接合１つの場合に比べ約２
倍の出力が得られた。The first ferromagnetic layer Co and the third ferromagnetic layer Co are sputtered in a magnetic field so that the magnetization directions thereof are the same, and the magnetization direction of the second ferromagnetic layer NiFe is orthogonal to Co. Was performed in a magnetic field as described above. Electrode is Co / Al-AlO X / NiF
e, it was measured magnetoresistive connected to the respective junction of NiFe / Al-AlO X / Co . The magnetoresistance effect was measured by applying a magnetic field in the direction of the hard axis of the soft magnetic NiFe film. At this time, the voltage is (+) for the first ferromagnetic layer, (-) for the second ferromagnetic layer, (+) for the third ferromagnetic layer, and (-) for the second ferromagnetic layer. It was applied as follows. As a result, Co / Al-AlO X / Ni
Fe, NiFe / Al-AlO X / Co resistance change ratio from the respective junctions 19%, 17% results. Also, when a magnetic field was applied by alternating current and the differential detection was performed, it was about 2
Double the output was obtained.

【００７２】また、電圧を第１の強磁性層が(-)、第２
の強磁性層が(+)と第３の強磁性層が(-)、第２の強磁性
層が(+)になるように印可した。この場合も、Co/Al-AlO
X/NiFe、NiFe/Al-AlOX/Coそれぞれの接合から抵抗変化
率が１９％、１７％の結果が得られた。また、交流で磁
界を印可して差動検出したところ接合１つの場合に比べ
約２倍の出力が得られた。The voltage is applied to the first ferromagnetic layer by (-),
The ferromagnetic layer was applied so that (+), the third ferromagnetic layer was (-), and the second ferromagnetic layer was (+). Also in this case, Co / Al-AlO
From the respective junctions of X / NiFe and NiFe / Al-AlO X / Co, the results of the resistance change rates of 19% and 17% were obtained. Further, when a magnetic field was applied with an alternating current and the differential detection was performed, an output approximately twice as large as that obtained with a single junction was obtained.

【００７３】以上より磁気抵抗効果素子、磁気抵抗効果
型ヘッドにおいて実用的な特性を示すことが明らかであ
る。It is apparent from the above that practical characteristics are exhibited in the magnetoresistive element and the magnetoresistive head.

【００７４】（実施例２）スパッタ装置を用いて以下に
示した構成の磁気抵抗効果素子をSi基板上に作成した。(Example 2) A magnetoresistive element having the following structure was formed on a Si substrate by using a sputtering apparatus.

【００７５】[Co(100)/Al-AlOx(13)/Ni0.8Fe0.2(100)/A
l-AlOX(13)/Co(100)] 但し、( )内の単位はオンク゛ストロームである。[Co (100) / Al-AlOx (13) / Ni 0.8 Fe 0.2 (100) / A
l-AlO X (13) / Co (100)] where the unit in parentheses is on-crystal.

【００７６】第１の強磁性層Co及び第３の強磁性層Coの
磁化方向が互いに同じ方向を向くように磁場中スパッタ
を行い、第２の強磁性層NiFeの磁化方向がCoと直交する
ように磁場中スパッタを行った。電極をCo/Al-AlOX/NiF
e、NiFe/Al-AlOX/Coのそれぞれの接合に対して接続して
磁気抵抗効果の測定を行った。磁気抵抗効果の測定は磁
界を軟磁性を示すNiFe膜の磁化困難軸方向に印加して測
定した。The first ferromagnetic layer Co and the third ferromagnetic layer Co are sputtered in a magnetic field so that the magnetization directions thereof are the same, and the magnetization direction of the second ferromagnetic layer NiFe is orthogonal to Co. Was performed in a magnetic field as described above. Electrode is Co / Al-AlO X / NiF
e, it was measured magnetoresistive connected to the respective junction of NiFe / Al-AlO X / Co . The magnetoresistance effect was measured by applying a magnetic field in the direction of the hard axis of the soft magnetic NiFe film.

【００７７】この時、電圧は第１の強磁性層が(+)、第
２の強磁性層が(-)と第３の強磁性層が(-)、第２の強磁
性層が(+)になるように印可した。この結果、Co/Al-AlO
X/NiFe、NiFe/Al-AlOX/Coそれぞれの接合から抵抗変化
率が１７％、１８％の結果が得られた。また、交流で磁
界を印可して得られたそれぞれの出力を足し合わせて検
出したところ接合１つの場合に比べ約1.5倍の出力が得
られた。また、電圧は第１の強磁性層が(-)、第２の強
磁性層が(+)と第３の強磁性層が(-)、第２の強磁性層が
(+)になるように印可した。また、電圧を第１の強磁性
層が(-)、第２の強磁性層が(+)と第３の強磁性層が
(+)、第２の強磁性層が(-)になるように印可した。At this time, the voltages are (+) for the first ferromagnetic layer, (-) and (-) for the second ferromagnetic layer, (-) for the third ferromagnetic layer, and (+) for the second ferromagnetic layer. ). As a result, Co / Al-AlO
X / NiFe, NiFe / Al- AlO X / Co resistance change ratio from the respective junctions 17%, 18% of the results were obtained. In addition, when the outputs obtained by applying the magnetic field with an alternating current were added and detected, an output about 1.5 times as high as that obtained with a single junction was obtained. The voltage is (-) for the first ferromagnetic layer, (+) for the second ferromagnetic layer, (-) for the third ferromagnetic layer, and (-) for the second ferromagnetic layer.
Applied to become (+). In addition, the first ferromagnetic layer sets the voltage to (-), the second ferromagnetic layer sets the voltage to (+), and the third ferromagnetic layer sets the voltage.
(+), The second ferromagnetic layer was applied so as to be (-).

【００７８】この場合も、Co/Al-AlOX/NiFe、NiFe/Al-A
lOX/Coそれぞれの接合から抵抗変化率が１７％、１８％
の結果が得られた。また、交流で磁界を印可してそれぞ
れの出力を足し合わせて検出したところ接合１つの場合
に比べ約２倍の出力が得られた。In this case also, Co / Al-AlO X / NiFe, NiFe / Al-A
lO X / Co resistance change ratio from the respective junctions 17%, 18%
Was obtained. Further, when a magnetic field was applied by an alternating current and the respective outputs were added and detected, an output approximately twice as high as that obtained with a single junction was obtained.

【００７９】以上より磁気抵抗効果素子、磁気抵抗効果
型ヘッドにおいて実用的な特性を示すことが明らかであ
る。From the above, it is apparent that practical characteristics are exhibited in the magnetoresistive element and the magnetoresistive head.

【００８０】（実施例３）スパッタ装置を用いて以下に
示した構成の磁気抵抗効果素子をSi基板上に作成した。(Example 3) A magnetoresistive element having the following structure was formed on a Si substrate by using a sputtering apparatus.

【００８１】[Co(100)/Al-AlOx(13)/Ni0.8Fe0.2(100)/A
l-AlOX(13)/Co(100)] 但し、( )内の単位はオンク゛ストロームである。[Co (100) / Al-AlOx (13) / Ni 0.8 Fe 0.2 (100) / A
l-AlO X (13) / Co (100)] where the unit in parentheses is on-crystal.

【００８２】第１の強磁性層Co及び第３の強磁性層Coの
磁化方向が互いに反平行方向を向くように磁場中スパッ
タを行い、第２の強磁性層NiFeの磁化方向がCoと直交す
るように磁場中スパッタを行った。電極をCo/Al-AlOX/N
iFe、NiFe/Al-AlOX/Coのそれぞれの接合に対して接続し
て磁気抵抗効果の測定を行った。磁気抵抗効果の測定は
磁界を軟磁性を示すNiFe膜の磁化困難軸方向に印加して
測定した。The first ferromagnetic layer Co and the third ferromagnetic layer Co are sputtered in a magnetic field so that the magnetization directions are antiparallel to each other, and the magnetization direction of the second ferromagnetic layer NiFe is orthogonal to Co. Was performed in a magnetic field. Electrode is Co / Al-AlO X / N
NiFe, was measured magnetoresistive connected to the respective junction of NiFe / Al-AlO X / Co . The magnetoresistance effect was measured by applying a magnetic field in the direction of the hard axis of the soft magnetic NiFe film.

【００８３】この時、電圧は第１の強磁性層が(+)、第
２の強磁性層が(-)と第３の強磁性層が(+)、第２の強磁
性層が(-)になるように印可した。この結果、Co/Al-AlO
X/NiFe、NiFe/Al-AlOX/Coそれぞれの接合から抵抗変化
率が１５％、１７％の結果が得られた。また、交流で磁
界を印可して得られたそれぞれの出力を足し合わせて検
出したところ接合１つの場合に比べ約1.8倍の出力が得
られた。At this time, the voltage is (+) for the first ferromagnetic layer, (−) and (−) for the second ferromagnetic layer, (+) for the third ferromagnetic layer, and (−) for the second ferromagnetic layer. ). As a result, Co / Al-AlO
X / NiFe, NiFe / Al- AlO X / Co resistance change ratio from the respective junctions 15%, 17% results. Further, when the respective outputs obtained by applying the magnetic field with the alternating current were added and detected, the output was about 1.8 times as large as that in the case of one joint.

【００８４】また、電圧を第１の強磁性層が(-)、第２
の強磁性層が(+)と第３の強磁性層が(-)、第２の強磁性
層が(+)になるように印可した。また、電圧を第１の強
磁性層が(-)、第２の強磁性層が(+)と第３の強磁性層が
(+)、第２の強磁性層が(-)になるように印可した。この
場合も、Co/Al-AlOX/NiFe、NiFe/Al-AlOX/Coそれぞれの
接合から抵抗変化率が１５％、１７％の結果が得られ
た。また、交流で磁界を印可してそれぞれの出力を足し
合わせて検出したところ接合１つの場合に比べ約２倍の
出力が得られた。The voltage is applied to the first ferromagnetic layer by (-),
The ferromagnetic layer was applied so that (+), the third ferromagnetic layer was (-), and the second ferromagnetic layer was (+). In addition, the first ferromagnetic layer sets the voltage to (-), the second ferromagnetic layer sets the voltage to (+), and the third ferromagnetic layer sets the voltage.
(+), The second ferromagnetic layer was applied so as to be (-). Again, Co / Al-AlO X / NiFe, NiFe / Al-AlO X / Co resistance change ratio from the respective junctions 15%, 17% results. Further, when a magnetic field was applied by an alternating current and the respective outputs were added and detected, an output approximately twice as high as that obtained with a single junction was obtained.

【００８５】以上より磁気抵抗効果素子、磁気抵抗効果
型ヘッドにおいて実用的な特性を示すことが明らかであ
る。From the above, it is apparent that practical characteristics are exhibited in the magnetoresistive element and the magnetoresistive head.

【００８６】（実施例４）スパッタ装置を用いて以下に
示した構成の磁気抵抗効果素子をSi基板上に作成した。Example 4 A magnetoresistive element having the following configuration was formed on a Si substrate using a sputtering apparatus.

【００８７】[Co(100)/Al-AlOx(13)/Ni0.8Fe0.2(100)/A
l-AlOX(13)/Co(100)] 但し、( )内の単位はオンク゛ストロームである。[Co (100) / Al-AlOx (13) / Ni 0.8 Fe 0.2 (100) / A
l-AlO X (13) / Co (100)] where the unit in parentheses is on-crystal.

【００８８】第１の強磁性層Co及び第３の強磁性層Coの
磁化方向が互いに反平行方向を向くように磁場中スパッ
タを行い、第２の強磁性層NiFeの磁化方向がCoと直交す
るように磁場中スパッタを行った。電極をCo/Al-AlOX/N
iFe、NiFe/Al-AlOX/Coのそれぞれの接合に対して接続し
て磁気抵抗効果の測定を行った。磁気抵抗効果の測定は
磁界を軟磁性を示すNiFe膜の磁化困難軸方向に印加して
測定した。この時、電圧は第１の強磁性層が(+)、第２
の強磁性層が(-)と第３の強磁性層が(-)、第２の強磁性
層が(+)になるように印可した。この結果、Co/Al-AlOX/
NiFe、NiFe/Al-AlOX/Coそれぞれの接合から抵抗変化率
が１９％、１７％の結果が得られた。The first ferromagnetic layer Co and the third ferromagnetic layer Co are sputtered in a magnetic field so that the magnetization directions are antiparallel to each other, and the magnetization direction of the second ferromagnetic layer NiFe is orthogonal to Co. Was performed in a magnetic field. Electrode is Co / Al-AlO X / N
NiFe, was measured magnetoresistive connected to the respective junction of NiFe / Al-AlO X / Co . The magnetoresistance effect was measured by applying a magnetic field in the direction of the hard axis of the soft magnetic NiFe film. At this time, the voltage is (+) in the first ferromagnetic layer,
The ferromagnetic layer was applied so that (−), the third ferromagnetic layer was (−), and the second ferromagnetic layer was (+). As a result, Co / Al-AlO X /
From the junctions of NiFe and NiFe / Al-AlO X / Co, the results of 19% and 17% of the resistance change rate were obtained.

【００８９】また、交流で磁界を印可して差動検出した
ところ接合１つの場合に比べ約２倍の出力が得られた。
また、電圧を第１の強磁性層が(-)、第２の強磁性層が
(+)と第３の強磁性層が(+)、第２の強磁性層が(-)にな
るように印可した。この場合も、Co/Al-AlOX/NiFe、NiF
e/Al-AlOX/Coそれぞれの接合から抵抗変化率が１９％、
１７％の結果が得られた。また、交流で磁界を印可して
差動検出したところ接合１つの場合に比べ約２倍の出力
が得られた。Further, when a magnetic field was applied with an alternating current and the differential detection was performed, an output approximately twice as high as that obtained with a single junction was obtained.
In addition, the first ferromagnetic layer sets the voltage to (-), and the second ferromagnetic layer sets the voltage.
(+) Was applied so that the third ferromagnetic layer became (+) and the second ferromagnetic layer became (-). Also in this case, Co / Al-AlO X / NiFe, NiF
e / Al-AlO X / Co junction resistance is 19%,
A result of 17% was obtained. Further, when a magnetic field was applied with an alternating current and the differential detection was performed, an output approximately twice as large as that obtained with a single junction was obtained.

【００９０】以上より磁気抵抗効果素子、磁気抵抗効果
型ヘッドにおいて実用的な特性を示すことが明らかであ
る。It is apparent from the above that practical characteristics are exhibited in the magnetoresistive element and the magnetoresistive head.

【００９１】（実施例５）スパッタ装置を用いて以下に
示した構成の磁気抵抗効果素子をSi基板上に作成した。Example 5 A magnetoresistive element having the following configuration was formed on a Si substrate using a sputtering apparatus.

【００９２】[IrMn(100)/Ni0.8Fe0.2(100)/Al-AlOx(13)
/Ni0.8Fe0.2(100)/Al-AlOX(13)/Ni0 .8Fe0.2(100)/IrMn
(100)] 但し、( )内の単位はオンク゛ストロームである。[IrMn (100) / Ni 0.8 Fe 0.2 (100) / Al-AlOx (13)
/ Ni 0.8 Fe 0.2 (100) / Al-AlO X (13) / Ni 0 .8 Fe 0.2 (100) / IrMn
(100)] However, the unit in () is on-question.

【００９３】第１の強磁性層IrMn/NiFe及び第３の強磁
性層IrMn/NiFeの磁化方向が互いに同じ方向を向くよう
に磁場中スパッタを行い、第２の強磁性層NiFeの磁化方
向がIrMn/NiFeと直交するように磁場中スパッタを行っ
た。電極をCo/Al-AlOX/NiFe、NiFe/Al-AlOX/Coのそれぞ
れの接合に対して接続して磁気抵抗効果の測定を行っ
た。The first ferromagnetic layer IrMn / NiFe and the third ferromagnetic layer IrMn / NiFe are sputtered in a magnetic field such that the magnetization directions thereof are the same, and the magnetization direction of the second ferromagnetic layer NiFe is changed. Sputtering was performed in a magnetic field so as to be orthogonal to IrMn / NiFe. It was measured magnetoresistance effect by connecting the electrode Co / Al-AlO X / NiFe , for each junction of NiFe / Al-AlO X / Co .

【００９４】磁気抵抗効果の測定は磁界を軟磁性を示す
NiFe膜の磁化困難軸方向に印加して測定した。この時、
電圧は第１の強磁性層が(+)、第２の強磁性層が(-)と第
３の強磁性層が(+)、第２の強磁性層が(-)になるように
印可した。この結果、IrMn/NiFe/Al-AlOX/NiFe、NiFe/A
l-AlOX/IrMn/NiFeそれぞれの接合から抵抗変化率が１９
％、２２％の結果が得られた。また、交流で磁界を印可
して差動検出したところ接合１つの場合に比べ約２倍の
出力が得られた。以上より磁気抵抗効果素子、磁気抵抗
効果型ヘッドにおいて実用的な特性を示すことが明らか
である。The measurement of the magnetoresistance effect indicates that the magnetic field is soft magnetic.
The measurement was performed by applying a voltage in the hard axis direction of the NiFe film. At this time,
The voltage is applied so that the first ferromagnetic layer is (+), the second ferromagnetic layer is (-), the third ferromagnetic layer is (+), and the second ferromagnetic layer is (-). did. As a result, IrMn / NiFe / Al-AlO X / NiFe, NiFe / A
l-AlO X / IrMn / NiFe junction resistance is 19
%, 22%. Further, when a magnetic field was applied with an alternating current and the differential detection was performed, an output approximately twice as large as that obtained with a single junction was obtained. From the above, it is clear that the magnetoresistive element and the magnetoresistive head exhibit practical characteristics.

【００９５】（実施例６）スパッタ装置を用いて以下に
示した構成の磁気抵抗効果素子をSi基板上に作成した。(Example 6) A magnetoresistive element having the following configuration was formed on a Si substrate by using a sputtering apparatus.

【００９６】[Co(30)/Cu(10)/Co(30)/Al-AlOx(13)/Ni
0.8Fe0.2(100)/Al-AlOX(13)/Ni0.8Fe0 .2(100)/Co(30)/C
u(10)/Co(30)] 但し、( )内の単位はオンク゛ストロームである。[Co (30) / Cu (10) / Co (30) / Al-AlOx (13) / Ni
0.8 Fe 0.2 (100) / Al -AlO X (13) / Ni 0.8 Fe 0 .2 (100) / Co (30) / C
u (10) / Co (30)] However, the unit in () is on-demand.

【００９７】第１の強磁性層Co/Cu/Co及び第３の強磁性
層Co/Cu/Coの磁化方向が互いに反平行方向を向くように
磁場中スパッタを行い、第２の強磁性層NiFeの磁化方向
がCo/Cu/Coと直交するように磁場中スパッタを行った。
電極をCo/Al-AlOX/NiFe、NiFe/Al-AlOX/Coのそれぞれの
接合に対して接続して磁気抵抗効果の測定を行った。The first ferromagnetic layer Co / Cu / Co and the third ferromagnetic layer Co / Cu / Co are sputtered in a magnetic field so that the magnetization directions thereof are antiparallel to each other. Sputtering was performed in a magnetic field such that the magnetization direction of NiFe was orthogonal to Co / Cu / Co.
It was measured magnetoresistance effect by connecting the electrode Co / Al-AlO X / NiFe , for each junction of NiFe / Al-AlO X / Co .

【００９８】磁気抵抗効果の測定は磁界を軟磁性を示す
NiFe膜の磁化困難軸方向に印加して測定した。この時、
電圧は第１の強磁性層が(+)、第２の強磁性層が(-)と第
３の強磁性層が(+)、第２の強磁性層が(-)になるように
印可した。The measurement of the magnetoresistance effect indicates that the magnetic field is soft magnetic.
The measurement was performed by applying a voltage in the hard axis direction of the NiFe film. At this time,
The voltage is applied so that the first ferromagnetic layer is (+), the second ferromagnetic layer is (-), the third ferromagnetic layer is (+), and the second ferromagnetic layer is (-). did.

【００９９】この結果、Co/Cu/Co/Al-AlOX/NiFe、NiFe/
Al-AlOX/Co/Cu/Coそれぞれの接合から抵抗変化率が１５
％、１７％の結果が得られた。また、交流で磁界を印可
して差動検出したところ接合１つの場合に比べ約1.8倍
の出力が得られた。以上より磁気抵抗効果素子、磁気抵
抗効果型ヘッドにおいて実用的な特性を示すことが明ら
かである。As a result, Co / Cu / Co / Al-AlO X / NiFe, NiFe /
Al-AlO X / Co / Cu / Co junction has a resistance change rate of 15
%, 17%. Further, when a magnetic field was applied with an alternating current and the differential detection was performed, an output approximately 1.8 times as high as that obtained with a single junction was obtained. From the above, it is clear that the magnetoresistive element and the magnetoresistive head exhibit practical characteristics.

【０１００】[0100]

【発明の効果】この発明によれば、室温でかつ実用的な
印加磁界で大きな磁気抵抗効果を示す磁気抵抗効果素子
を得ることができ、高感度磁気抵抗効果素子、ＭＲヘッ
ド等への応用が可能となる。According to the present invention, a magnetoresistive element exhibiting a large magnetoresistance effect at room temperature and in a practically applied magnetic field can be obtained, and can be applied to a high-sensitivity magnetoresistance element, an MR head, and the like. It becomes possible.

【図面の簡単な説明】[Brief description of the drawings]

【図１】（ａ）本発明の磁気抵抗効果素子、磁気抵抗効
果型ヘッドの素子部の構成図 （ｂ）本発明の磁気抵抗効果素子と磁気抵抗効果型ヘッ
ドを構成する第１の強磁性層2、第２の強磁性層4、第３
の強磁性層6の磁化の方向を示す図FIG. 1A is a configuration diagram of an element portion of a magnetoresistive effect element and a magnetoresistive head of the present invention. FIG. 1B is a first ferromagnetic element forming a magnetoresistive effect element of the present invention and a magnetoresistive head. Layer 2, second ferromagnetic layer 4, third
Showing the direction of magnetization of the ferromagnetic layer 6 of FIG.

【図２】（ａ）本発明の磁気抵抗効果素子と磁気抵抗効
果型ヘッドを構成する第１の強磁性層2、第２の強磁性
層4、第３の強磁性層6の磁化の方向と印可電圧方向を示
す図 （ｂ）本発明の磁気抵抗効果素子と磁気抵抗効果型ヘッ
ドを構成する第１の強磁性層2、第２の強磁性層4、第３
の強磁性層6の磁化の方向と印可電圧方向を示す図 （ｃ）本発明の磁気抵抗効果素子と磁気抵抗効果型ヘッ
ドを構成する第１の強磁性層2、第２の強磁性層4、第３
の強磁性層6の磁化の方向と印可電圧方向を示す図 （ｄ）本発明の磁気抵抗効果素子と磁気抵抗効果型ヘッ
ドを構成する第１の強磁性層2、第２の強磁性層4、第３
の強磁性層6の磁化の方向と印可電圧方向を示す図FIG. 2A shows directions of magnetization of a first ferromagnetic layer 2, a second ferromagnetic layer 4, and a third ferromagnetic layer 6 constituting a magnetoresistive element of the present invention and a magnetoresistive head. (B) The first ferromagnetic layer 2, the second ferromagnetic layer 4, and the third ferromagnetic layer 2 constituting the magnetoresistive element and the magnetoresistive head of the present invention.
(C) The first ferromagnetic layer 2 and the second ferromagnetic layer 4 constituting the magnetoresistive element and the magnetoresistive head of the present invention. , Third
(D) A diagram showing the magnetization direction and applied voltage direction of the ferromagnetic layer 6 of the first embodiment. (D) The first ferromagnetic layer 2 and the second ferromagnetic layer 4 constituting the magnetoresistive element and the magnetoresistive head of the present invention. , Third
Showing the magnetization direction and applied voltage direction of the ferromagnetic layer 6 of FIG.

【図３】（ａ）本発明の磁気抵抗効果素子と磁気抵抗効
果型ヘッドを構成する第１の強磁性層2／絶縁層（トン
ネル障壁層）3／第２の強磁性層4の接合部から得られる
出力と、第３の強磁性層2／絶縁層（トンネル障壁層）5
／第２の強磁性層4の接合部から得られる出力とを差動
検出した場合の出力を示す図 （ｂ）本発明の磁気抵抗効果素子と磁気抵抗効果型ヘッ
ドを構成する第１の強磁性層2／絶縁層（トンネル障壁
層）3／第２の強磁性層4の接合部から得られる出力と、
第３の強磁性層2／絶縁層（トンネル障壁層）5／第２の
強磁性層4の接合部から得られる出力とを足し合わせて
検出した場合の出力を示す図 （ｃ）本発明の磁気抵抗効果素子と磁気抵抗効果型ヘッ
ドを構成する第１の強磁性層2／絶縁層（トンネル障壁
層）3／第２の強磁性層4の接合部から得られる出力と、
第３の強磁性層2／絶縁層（トンネル障壁層）5／第２の
強磁性層4の接合部から得られる出力とを足し合わせて
検出した場合の出力を示す図 （ｄ）本発明の磁気抵抗効果素子と磁気抵抗効果型ヘッ
ドを構成する第１の強磁性層2／絶縁層（トンネル障壁
層）3／第２の強磁性層4の接合部から得られる出力と、
第３の強磁性層2／絶縁層（トンネル障壁層）5／第２の
強磁性層4の接合部から得られる出力とを差動検出した
場合の出力を示す図FIG. 3A shows a junction of a first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 constituting a magnetoresistive element of the present invention and a magnetoresistive head. And the third ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 5
FIG. 4B shows an output when differential detection is performed between an output obtained from a junction of the second ferromagnetic layer 4 and a first output which constitutes the magnetoresistive element and the magnetoresistive head of the present invention. An output obtained from a junction of the magnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4,
FIG. 7C is a diagram showing an output when the output obtained by adding the output obtained from the junction of the third ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 5 / second ferromagnetic layer 4 is added. An output obtained from a junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 constituting the magnetoresistive element and the magnetoresistive head;
FIG. 4D is a diagram showing an output when the output obtained by adding the output obtained from the junction of the third ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 5 / second ferromagnetic layer 4 is added. An output obtained from a junction of the first ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 3 / second ferromagnetic layer 4 constituting the magnetoresistive element and the magnetoresistive head;
The figure which shows the output when the output obtained from the junction of the third ferromagnetic layer 2 / insulating layer (tunnel barrier layer) 5 / second ferromagnetic layer 4 is differentially detected.

【図４】（ａ）本発明の磁気抵抗効果素子、磁気抵抗効
果型ヘッドの素子部の構成図（第１の強磁性層2の下に
反強磁性層10層を、第３の強磁性層6の上に反強磁性層1
0'を入れたタイプ） （ｂ）本発明の磁気抵抗効果素子、磁気抵抗効果型ヘッ
ドの素子部の構成図（第１の強磁性層2、第３の強磁性
層6を交換結合型の強磁性層11／非磁性層12／強磁性層1
3に置き換えたタイプ）FIG. 4 (a) is a structural view of the magnetoresistive element of the present invention and the element section of the magnetoresistive head (10 antiferromagnetic layers below the first ferromagnetic layer 2 and a third ferromagnetic layer; Antiferromagnetic layer 1 on layer 6
0b) (b) Configuration diagram of the magnetoresistive element of the present invention and the element portion of the magnetoresistive head (the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are exchange-coupled type). Ferromagnetic layer 11 / nonmagnetic layer 12 / ferromagnetic layer 1
Type replaced with 3)

【図５】本発明の磁気抵抗効果素子、磁気抵抗効果型ヘ
ッドの素子部の実施の形態を示す構成図（第１の強磁性
層2、第３の強磁性層6を保磁力の大きな強磁性材料にし
た場合）FIG. 5 is a configuration diagram showing an embodiment of the magnetoresistive element and the element section of the magnetoresistive head according to the present invention (the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are formed with a large coercive force; When magnetic material is used)

【図６】本発明の磁気抵抗効果素子、磁気抵抗効果型ヘ
ッドの素子部の実施の形態を示す構成図（第１の強磁性
層2の下に反強磁性層10層を、第３の強磁性層6の上に反
強磁性層10'を入場合）FIG. 6 is a structural view showing an embodiment of the magnetoresistive element and the element section of the magnetoresistive head according to the present invention (10 antiferromagnetic layers below the first ferromagnetic layer 2; When the antiferromagnetic layer 10 'is inserted on the ferromagnetic layer 6)

【図７】本発明の磁気抵抗効果素子、磁気抵抗効果型ヘ
ッドの素子部の実施の形態を示す構成図（第１の強磁性
層2、第３の強磁性層6を交換結合型の強磁性層11／非磁
性層12／強磁性層13に置き換えた場合）FIG. 7 is a configuration diagram showing an embodiment of the magnetoresistive element and the element section of the magnetoresistive head according to the present invention (the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are exchange-coupled strong). (When replaced with magnetic layer 11 / non-magnetic layer 12 / ferromagnetic layer 13)

【図８】本発明の磁気抵抗効果素子、磁気抵抗効果型ヘ
ッドの素子部の実施の形態を示す構成図（第１の強磁性
層2、第３の強磁性層6を静磁結合型の強磁性層11／絶縁
層14／強磁性層13に置き換えた場合）FIG. 8 is a configuration diagram showing an embodiment of an element portion of the magnetoresistive element and the magnetoresistive head according to the present invention (the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are of a magnetostatic coupling type; (When replaced with ferromagnetic layer 11 / insulating layer 14 / ferromagnetic layer 13)

【図９】（ａ）本発明の磁気抵抗効果型ヘッドの構成図
を示す図（第１の強磁性層2と第３の強磁性層6の磁化方
向が同じ方向に固定されている場合） （ｂ）本発明の磁気抵抗効果型ヘッドの構成図を示す図
（第１の強磁性層2と第３の強磁性層6の磁化方向が反平
行方向に固定されている場合）FIG. 9A is a diagram showing a configuration diagram of a magnetoresistive head according to the present invention (when the magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are fixed in the same direction); (B) A diagram showing the configuration of the magnetoresistive head of the present invention (when the magnetization directions of the first ferromagnetic layer 2 and the third ferromagnetic layer 6 are fixed in antiparallel directions)

【図１０】（ａ）従来のトンネル接合が１つの場合の磁
気抵抗効果素子を示す構成図 （ｂ）従来のトンネル接合が１つの場合の磁気抵抗効果
素子を示す断面図FIG. 10A is a configuration diagram showing a conventional magnetoresistive element having one tunnel junction. FIG. 10B is a sectional view showing a conventional magnetoresistive element having one tunnel junction.

【図１１】本発明の磁気抵抗効果素子を用いたヘッドの
構成図FIG. 11 is a configuration diagram of a head using the magnetoresistive element of the present invention.

【符号の説明】[Explanation of symbols]

１ 基板 ２ 第１の強磁性層 ３ 絶縁層（トンネル障壁層） ３ａ SiO2 ４ 第２の強磁性層１３ ５ 絶縁層（トンネル障壁層） ６ 第３の強磁性層 ７Ａ 第３の強磁性層と第２の強磁性層間に印可する電
源（第１の強磁性層と第３の強磁性層の磁化方向が平行
の場合） ７Ｂ 第１の強磁性層と第２の強磁性層間に印可する電
源（第１の強磁性層と第３の強磁性層の磁化方向が平行
の場合） ７Ａ’ 第３の強磁性層と第２の強磁性層間に印可する
電源（第１の強磁性層と第３の強磁性層の磁化方向が平
行の場合） ７Ｂ’ 第１の強磁性層と第２の強磁性層間に印可する
電源（第１の強磁性層と第３の強磁性層の磁化方向が平
行の場合） ７Ｃ 第３の強磁性層と第２の強磁性層間に印可する電
源（第１の強磁性層と第３の強磁性層の磁化方向が反平
行の場合） ７Ｄ 第１の強磁性層と第２の強磁性層間に印可する電
源（第１の強磁性層と第３の強磁性層の磁化方向が反平
行の場合） ７Ｃ’ 第３の強磁性層と第２の強磁性層間に印可する
電源（第１の強磁性層と第３の強磁性層の磁化方向が反
平行の場合） ７Ｄ’ 第１の強磁性層と第２の強磁性層間に印可する
電源（第１の強磁性層と第３の強磁性層の磁化方向が反
平行の場合） ８ａ 第３の強磁性層と第２の強磁性層間で得られる出
力（第１の強磁性層と第３の強磁性層の磁化方向が平行
の場合） ８ｂ 第１の強磁性層と第２の強磁性層間で得られる出
力（第１の強磁性層と第３の強磁性層の磁化方向が平行
の場合） ８ａ’ 第３の強磁性層と第２の強磁性層間で得られる
出力（第１の強磁性層と第３の強磁性層の磁化方向が平
行の場合） ８ｂ’ 第１の強磁性層と第２の強磁性層間で得られる
出力（第１の強磁性層と第３の強磁性層の磁化方向が平
行の場合） ８ｃ 第３の強磁性層と第２の強磁性層間で得られる出
力（第１の強磁性層と第３の強磁性層の磁化方向が反平
行の場合） ８ｄ 第１の強磁性層と第２の強磁性層間で得られる出
力（第１の強磁性層と第３の強磁性層の磁化方向が反平
行の場合） ８ｃ’ 第３の強磁性層と第２の強磁性層間で得られる
出力（第１の強磁性層と第３の強磁性層の磁化方向が反
平行の場合） ８ｄ’ 第１の強磁性層と第２の強磁性層間で得られる
出力（第１の強磁性層と第３の強磁性層の磁化方向が反
平行の場合） ９ａ 第３の強磁性層と第２の強磁性層間で得られる出
力と第１の強磁性層と第２の強磁性層間で得られる出力
を差動検出した場合に得られる出力（第１の強磁性層と
第３の強磁性層の磁化方向が平行の場合） ９ｂ 第３の強磁性層と第２の強磁性層間で得られる出
力と第１の強磁性層と第２の強磁性層間で得られる出力
をそれぞれ足し合わせて検出した場合に得られる出力
（第１の強磁性層と第３の強磁性層の磁化方向が平行の
場合） ９ｃ 第３の強磁性層と第２の強磁性層間で得られる出
力と第１の強磁性層と第２の強磁性層間で得られる出力
をそれぞれ足し合わせて検出した場合に得られる出力
（第１の強磁性層と第３の強磁性層の磁化方向が反平行
の場合） ９ｄ 第３の強磁性層と第２の強磁性層間で得られる出
力と第１の強磁性層と第２の強磁性層間で得られる出力
を差動検出した場合に得られる出力（第１の強磁性層と
第３の強磁性層の磁化方向が反平行の場合） １０ 第１の強磁性層を固定する反強磁性層 １０’ 第３の強磁性層を固定する反強磁性層 １１ 強磁性層 １２ 非磁性層 １３ 強磁性層 １４ 絶縁層 １０１ ＭＲ素子 １０２ 再生ギャップ １０３ 記録ギャップ １０４ 記録コア １０５ 記録コイル １０６ 基板 Ａ１ 信号磁界入力方向 Ａ 出力の大きさを示す値 ａ 電極 ｂ 電極 ｃ 電極 ｄ 電極1 substrate 2 first ferromagnetic layer 3 insulating layer (tunnel barrier layer) 3a SiO 2 4 second ferromagnetic layer 13 5 insulating layer (tunnel barrier layer) 6 third ferromagnetic layer 7A third ferromagnetic layer Power supply applied between the first ferromagnetic layer and the second ferromagnetic layer (when the magnetization directions of the first ferromagnetic layer and the third ferromagnetic layer are parallel) 7B Applied between the first ferromagnetic layer and the second ferromagnetic layer Power supply (when the magnetization directions of the first ferromagnetic layer and the third ferromagnetic layer are parallel) 7A 'Power supply applied between the third ferromagnetic layer and the second ferromagnetic layer. 7B 'Power supply applied between the first ferromagnetic layer and the second ferromagnetic layer (the magnetization direction of the first ferromagnetic layer and the third ferromagnetic layer) 7C Power supply applied between the third ferromagnetic layer and the second ferromagnetic layer (when the magnetization directions of the first ferromagnetic layer and the third ferromagnetic layer are antiparallel) 7D A power supply applied between the first ferromagnetic layer and the second ferromagnetic layer (when the magnetization directions of the first and third ferromagnetic layers are antiparallel). 7C ' Power supply applied between the second ferromagnetic layers (when the magnetization directions of the first and third ferromagnetic layers are antiparallel) 7D ′ Applied between the first and second ferromagnetic layers (A case where the magnetization directions of the first and third ferromagnetic layers are antiparallel) 8a Output obtained between the third and second ferromagnetic layers (the first ferromagnetic layer) 8b Output obtained between the first ferromagnetic layer and the second ferromagnetic layer (magnetization direction of the first ferromagnetic layer and the third ferromagnetic layer) 8a ′ Output obtained between the third ferromagnetic layer and the second ferromagnetic layer (when the magnetization directions of the first ferromagnetic layer and the third ferromagnetic layer are parallel) 8b ′ 1st Strength of Obtained between the conductive layer and the second ferromagnetic layer (when the magnetization directions of the first and third ferromagnetic layers are parallel) 8c Between the third ferromagnetic layer and the second ferromagnetic layer Output obtained (when the magnetization directions of the first and third ferromagnetic layers are antiparallel) 8d Output obtained between the first and second ferromagnetic layers (first ferromagnetic layer) 8c 'Output obtained between the third ferromagnetic layer and the second ferromagnetic layer (the first ferromagnetic layer and the third ferromagnetic layer) 8d 'Output obtained between the first ferromagnetic layer and the second ferromagnetic layer (when the magnetization directions of the first ferromagnetic layer and the third ferromagnetic layer are antiparallel) 9a) Output obtained when differential detection between the output obtained between the third ferromagnetic layer and the second ferromagnetic layer and the output obtained between the first ferromagnetic layer and the second ferromagnetic layer (No. (When the magnetization directions of the first ferromagnetic layer and the third ferromagnetic layer are parallel) 9b The output obtained between the third ferromagnetic layer and the second ferromagnetic layer, and the first ferromagnetic layer and the second ferromagnetic layer An output obtained when the outputs obtained between the magnetic layers are added together and detected (when the magnetization directions of the first and third ferromagnetic layers are parallel) 9c The third ferromagnetic layer and the second Output obtained between the first ferromagnetic layer and the output obtained between the first ferromagnetic layer and the second ferromagnetic layer and the output obtained between the first ferromagnetic layer and the second ferromagnetic layer (the first ferromagnetic layer and the third 9d The differential between the output obtained between the third ferromagnetic layer and the second ferromagnetic layer and the output obtained between the first ferromagnetic layer and the second ferromagnetic layer Output obtained when detected (when the magnetization directions of the first and third ferromagnetic layers are antiparallel) 10 First strong magnetic field Antiferromagnetic layer for fixing layer 10 'Antiferromagnetic layer for fixing third ferromagnetic layer 11 Ferromagnetic layer 12 Nonmagnetic layer 13 Ferromagnetic layer 14 Insulating layer 101 MR element 102 Reproduction gap 103 Recording gap 104 Recording core 105 Recording coil 106 Substrate A1 Signal magnetic field input direction A Value indicating the magnitude of output a electrode b electrode c electrode d electrode

───────────────────────────────────────────────────── フロントページの続き (72)発明者 辻 弘恭 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 深澤 利雄 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ──────────────────────────────────────────────────の Continuing from the front page (72) Inventor Hiroyasu Tsuji 1006 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (15)

【特許請求の範囲】[Claims] 【請求項１】 基板上に少なくとも３つ以上強磁性層と
少なくとも２つ以上のトンネル障壁を有し、第１の強磁
性層と第２の強磁性層の間に第１のトンネル障壁を有
し、前記第２の強磁性層と第３の強磁性層の間に第２の
トンネル障壁を有する事を特徴とする磁気抵抗効果素
子。1. A semiconductor device comprising: at least three or more ferromagnetic layers and at least two or more tunnel barriers on a substrate; and a first tunnel barrier between the first and second ferromagnetic layers. And a second tunnel barrier between the second ferromagnetic layer and the third ferromagnetic layer. 【請求項２】 印可磁場の無いときには第１の磁性層の
磁化方向及び第３の磁性層の磁化方向と第２の磁性層の
磁化方向が直交し、第２の強磁性層の磁化方向が検知す
べき磁界の方向と実質的に直交していることを特徴とす
る請求項１記載の磁気抵抗効果素子。2. When there is no applied magnetic field, the magnetization direction of the first magnetic layer, the magnetization direction of the third magnetic layer, and the magnetization direction of the second magnetic layer are orthogonal to each other, and the magnetization direction of the second ferromagnetic layer is 2. The magnetoresistive element according to claim 1, wherein the element is substantially orthogonal to the direction of the magnetic field to be detected. 【請求項３】 磁気抵抗効果素子の膜面に対し、センス
電流が主に垂直方向に流れる様にすることを特徴とする
請求項１または２記載の磁気抵抗効果素子。3. The magnetoresistive element according to claim 1, wherein a sense current mainly flows in a direction perpendicular to a film surface of the magnetoresistive element. 【請求項４】 第２の強磁性層が電気的に接地されてい
ることを特徴とする請求項１、２または３記載の磁気抵
抗効果素子。4. The magnetoresistive element according to claim 1, wherein the second ferromagnetic layer is electrically grounded. 【請求項５】 第１の磁性層と第３の磁性層の磁化の方
向が互いに平行であることを特徴とする請求項１〜４記
載の磁気抵抗効効果素子。5. The magnetoresistive effect element according to claim 1, wherein the directions of magnetization of the first magnetic layer and the third magnetic layer are parallel to each other. 【請求項６】 第１の強磁性層と第２の強磁性層の間に
流れるトンネル電流と第３の強磁性層と前記第２の強磁
性層の間に流れるトンネル電流が互いに反対方向である
ことを特徴とする請求項５記載の磁気抵抗効果素子。6. A tunnel current flowing between a first ferromagnetic layer and a second ferromagnetic layer and a tunnel current flowing between a third ferromagnetic layer and the second ferromagnetic layer are opposite to each other. 6. The magnetoresistive element according to claim 5, wherein: 【請求項７】 第１の強磁性層と第２の強磁性層の間に
流れるトンネル電流と第３の強磁性層と前記第２の強磁
性層の間に流れるトンネル電流が互いに同じ方向である
ことを特徴とする請求項５記載の磁気抵抗効果素子。7. A tunnel current flowing between a first ferromagnetic layer and a second ferromagnetic layer and a tunnel current flowing between a third ferromagnetic layer and the second ferromagnetic layer are in the same direction. 6. The magnetoresistive element according to claim 5, wherein: 【請求項８】 第１の磁性層と第３の磁性層の磁化の方
向が互いに反平行であることを特徴とする請求項１〜４
記載の磁気抵抗効効果素子。8. The method according to claim 1, wherein the directions of magnetization of the first magnetic layer and the third magnetic layer are antiparallel to each other.
The magnetoresistive effect element as described in the above. 【請求項９】 第１のトンネル障壁又は第２のトンネル
障壁の厚さが２０Å以下であることを特徴とする請求項
１〜８のいずれかに記載の磁気抵抗効果素子。9. The magnetoresistive element according to claim 1, wherein the thickness of the first tunnel barrier or the second tunnel barrier is 20 ° or less. 【請求項１０】 第２の強磁性層が軟磁性膜であること
を特徴とする請求項１〜９のいずれかに記載の磁気抵抗
効果素子。10. The magnetoresistive element according to claim 1, wherein the second ferromagnetic layer is a soft magnetic film. 【請求項１１】 第１の強磁性層又は第３の強磁性層の
磁化の方向を固定されていることを特徴とする請求項１
〜１０のいずれかに記載の磁気抵抗効果素子。11. The method according to claim 1, wherein the direction of magnetization of the first ferromagnetic layer or the third ferromagnetic layer is fixed.
11. The magnetoresistance effect element according to any one of items 10 to 10. 【請求項１２】 電極が非磁性体であることを特徴とす
る請求項１〜１１のいずれかに記載の磁気抵抗効果素
子。12. The magnetoresistance effect element according to claim 1, wherein the electrode is a non-magnetic material. 【請求項１３】 第１の強磁性層と第２の強磁性層の間
から得られる出力と前記第２の強磁性層と第３の強磁性
層間から得られる出力を差動検出器で検出する事を特徴
とする請求項１〜１２のいずれかに記載の磁気抵抗効果
素子。13. A differential detector detects an output obtained between a first ferromagnetic layer and a second ferromagnetic layer and an output obtained between the second ferromagnetic layer and a third ferromagnetic layer. The magnetoresistive element according to claim 1, wherein: 【請求項１４】 第１の強磁性層と第２の強磁性層の間
から得られる出力と前記第２の強磁性層と第３の強磁性
層間から得られる出力を互いに足し合わせてで検出する
事を特徴とする請求項１〜１３の何れかに記載の磁気抵
抗効果素子。14. An output obtained between a first ferromagnetic layer and a second ferromagnetic layer and an output obtained from the second ferromagnetic layer and a third ferromagnetic layer are added to each other and detected. The magnetoresistive element according to claim 1, wherein: 【請求項１５】 請求項１〜１４に記載の磁気抵抗効果
素子を再生ギャップの中に配置して成る磁気抵抗効果型
ヘッド。15. A magnetoresistive head comprising the magnetoresistive element according to claim 1 disposed in a reproducing gap.
JP9325746A 1997-11-27 1997-11-27 Magnetoresistance effect element and magnetoresistance effect type head Pending JPH11163436A (en)

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