JPH11163057A - Removing method and connection method for semiconductor device - Google Patents

Removing method and connection method for semiconductor device

Info

Publication number
JPH11163057A
JPH11163057A JP32270797A JP32270797A JPH11163057A JP H11163057 A JPH11163057 A JP H11163057A JP 32270797 A JP32270797 A JP 32270797A JP 32270797 A JP32270797 A JP 32270797A JP H11163057 A JPH11163057 A JP H11163057A
Authority
JP
Japan
Prior art keywords
semiconductor device
resin
circuit board
connection
thermal decomposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32270797A
Other languages
Japanese (ja)
Inventor
Tetsuyuki Okano
哲之 岡野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP32270797A priority Critical patent/JPH11163057A/en
Publication of JPH11163057A publication Critical patent/JPH11163057A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/799—Apparatus for disconnecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To surely remove a resin in a simple process, by removing a semiconductor device after heating the resin between the semiconductor device and a circuit board to a temperature of thermal decomposition or above. SOLUTION: A semiconductor substrate 1 and a circuit board 5 are provided that a bump electrode 2 of the semiconductor device 1 faces a connection pad 6 of the circuit board 5 with a resin 3 in between, and the resin 3 is heated for curing. The heating at connection between the bump electrode 2 and the connection pad 6 extrude the resin 3 at the connection part, so that the bump electrode 2 is connected to the connection pad 6 with a conductive particle 4 in between. Then the semiconductor device 1 is inspected to judge whether it is defective or not, and the resin 3 of a mounting structure body is heated to a thermal decomposition temperature in case of defective, so that the resin 3 loses intrinsic characteristics for reduced adhesive strength, and the semiconductor device 1 is removed from the circuit board 5. Thus, the semiconductor device 1 is easily removed, while a remaining resin is easily removed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、接続部に導電粒子
を介在させることにより、微細ピッチ接続及び信頼性の
向上を図る半導体装置の実装構造において、回路基板に
接続した半導体装置の不良品の除去方法及び半導体装置
の接続方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounting structure for improving fine-pitch connection and reliability by interposing conductive particles in a connection portion. The present invention relates to a removing method and a method for connecting a semiconductor device.

【０００２】[0002]

【従来の技術】近年、半導体装置の実装においては、接
続端子数の増加や半導体装置の実装面積縮小化の要求か
ら、ベアチップ実装による接続ピッチの微細化が進めら
れている。ベアチップの実装方法としては、半導体装置
の突起電極上に導電性粒子を介在させ、接続信頼性の向
上を図る手段が採用されている。2. Description of the Related Art In recent years, in mounting semiconductor devices, miniaturization of connection pitch by bare chip mounting has been promoted due to a demand for an increase in the number of connection terminals and a reduction in a mounting area of the semiconductor device. As a method for mounting a bare chip, means for improving the connection reliability by interposing conductive particles on the projecting electrodes of the semiconductor device is employed.

【０００３】特に、導電性粒子と接着樹脂層から構成さ
れる異方導電性接着樹脂（以下ＡＣＦと略す）を用いた
接続方法の場合、アンダフィル樹脂を充填する必要がな
いため、実装時間の短縮、コストの低減を図ることが可
能であり、注目を集めいている。[0003] In particular, in the case of a connection method using an anisotropic conductive adhesive resin (hereinafter abbreviated as ACF) composed of conductive particles and an adhesive resin layer, it is not necessary to fill an underfill resin. It is possible to reduce the cost and cost, and it is attracting attention.

【０００４】図２は、ＡＣＦを用いた半導体装置の実装
構造体を説明する断面模式図である。半導体装置１には
突起電極２が設けられている。回路基板５には上記突起
電極２と接続される接続パッド６が形成されている。半
導体装置１と回路基板５との間には導電粒子４を含むＡ
ＣＦ３が満たされている。ＡＣＦ３は、シート状樹脂で
あり突起電極２と接続パッド６との接続前に、半導体装
置１と回路基板５との間に挿入される。そして、突起電
極２と接続パッド６との接続時の加熱によりその接続部
分の樹脂が押しのけられ、導電粒子４が介在した状態で
突起電極２と接続パッド６とが接続される。FIG. 2 is a schematic sectional view illustrating a mounting structure of a semiconductor device using an ACF. The semiconductor device 1 is provided with a bump electrode 2. Connection pads 6 connected to the protruding electrodes 2 are formed on the circuit board 5. A including conductive particles 4 between semiconductor device 1 and circuit board 5
CF3 is satisfied. The ACF 3 is a sheet-like resin and is inserted between the semiconductor device 1 and the circuit board 5 before the connection between the protruding electrode 2 and the connection pad 6. Then, the resin at the connection portion is displaced by heating at the time of connection between the bump electrode 2 and the connection pad 6, and the bump electrode 2 and the connection pad 6 are connected with the conductive particles 4 interposed therebetween.

【０００５】この接続方法によれば、基板に電子部品を
微細ピッチで接続することが可能となる。しかしなが
ら、上記方法で形成した半導体装置の実装構造は、接
続に用いた樹脂（ＡＣＦ）の硬化後、その樹脂を溶解さ
せるような溶剤が存在しない、ＡＣＦは一般的に熱硬
化性樹脂を主成分としている、などの理由により、一旦
接続した半導体装置の除去，交換が非常に困難である。
このため、１個の半導体装置に不良があった場合、その
半導体装置を取り付けた基板全体を破棄しなければなら
ず、コストアップを招くという問題がある。According to this connection method, it is possible to connect electronic components to the substrate at a fine pitch. However, the mounting structure of the semiconductor device formed by the above method is such that after the resin (ACF) used for the connection is cured, there is no solvent for dissolving the resin. ACF generally contains a thermosetting resin as a main component. It is very difficult to remove and replace the semiconductor device once connected.
For this reason, if one semiconductor device has a defect, the entire substrate to which the semiconductor device is attached must be discarded, which causes a problem of increasing the cost.

【０００６】上記のごとく、ＡＣＦを用いた半導体装置
の接続・リペア方法は困難であるが、その方法として、
次に示す２種類の方法が提案されている。As described above, it is difficult to connect / repair a semiconductor device using an ACF.
The following two methods have been proposed.

【０００７】第１の方法は、図５のフローチャートに示
す方法で半導体装置の接続・リペアを行うものである。
この方法について図２に示した実装構造体の構成図を参
照しながら説明する。The first method is to connect and repair a semiconductor device by the method shown in the flowchart of FIG.
This method will be described with reference to the configuration diagram of the mounting structure shown in FIG.

【０００８】まず、ステップ１０１において、半導体装
置１の突起電極２と回路基板５の接続パッド６との位置
合わせを行う。このとき、ＡＣＦ３を半導体装置１と回
路基板５との間に配置する。次に、ステップ１０２にお
いて、加熱しながら突起電極２と接続パッド６とを密着
することによりそれらを接続するとともに、ＡＣＦ３を
硬化させる。これにより、半導体装置１は回路基板５上
に本接続される。続いて、ステップ１０３において、半
導体装置１の検査を行い、不良品であるか否かを判定す
る。不良品であると判定された場合、ステップ１０４に
おいてＡＣＦ３を半田の融点程度（２４０℃）の熱で加
熱する。そして、ステップ１０５において半導体装置１
を回路基板５から引き剥がす。そして、半導体装置を交
換して再度接続工程を行う。First, in step 101, alignment between the protruding electrode 2 of the semiconductor device 1 and the connection pad 6 of the circuit board 5 is performed. At this time, the ACF 3 is disposed between the semiconductor device 1 and the circuit board 5. Next, in step 102, the protruding electrode 2 and the connection pad 6 are brought into close contact with each other while being heated, so that they are connected and the ACF 3 is cured. Thereby, the semiconductor device 1 is permanently connected on the circuit board 5. Subsequently, in step 103, the semiconductor device 1 is inspected to determine whether or not it is defective. If it is determined that the product is defective, the ACF 3 is heated in step 104 with heat of about the melting point of solder (240 ° C.). Then, in step 105, the semiconductor device 1
Is peeled off from the circuit board 5. Then, the semiconductor device is replaced and the connection process is performed again.

【０００９】一方、第２の方法は、図６のフローチャー
トに示す方法で半導体装置の接続・リペアを行うもので
ある。この方法について図２に示した実装構造体の構成
図を参照しながら説明する。On the other hand, the second method is to connect and repair a semiconductor device by the method shown in the flowchart of FIG. This method will be described with reference to the configuration diagram of the mounting structure shown in FIG.

【００１０】まず、ステップ２０１において、半導体装
置１の突起電極２と回路基板５の接続パッド６との位置
合わせを行う。このとき、ＡＣＦ３を半導体装置１と回
路基板５との間に配置する。次に、ステップ２０２にお
いて、加熱しながら突起電極２と接続パッド６とを密着
することによりそれらを接続する。また、このときＡＣ
Ｆ３を半硬化させる（仮接続する）。続いて、ステップ
２０３において、半導体装置１の検査を行い、不良品で
あるか否かを判定する。不良品であると判定された場
合、ステップ２０４において半導体装置１を回路基板５
から引き剥がす。そして、半導体装置を交換して再度接
続工程を行う。First, in step 201, alignment between the protruding electrode 2 of the semiconductor device 1 and the connection pad 6 of the circuit board 5 is performed. At this time, the ACF 3 is disposed between the semiconductor device 1 and the circuit board 5. Next, in step 202, the protruding electrode 2 and the connection pad 6 are brought into close contact with each other while heating, thereby connecting them. At this time, AC
F3 is semi-cured (temporarily connected). Subsequently, in step 203, the semiconductor device 1 is inspected to determine whether it is defective. If the semiconductor device 1 is determined to be defective, the semiconductor device 1
And peel it off. Then, the semiconductor device is replaced and the connection process is performed again.

【００１１】[0011]

【発明が解決しようとする課題】ところが上記の方法で
半導体装置の除去を行った際に、次のような欠点を有す
る。However, when the semiconductor device is removed by the above-described method, it has the following disadvantages.

【００１２】第１の方法では、回路基板５上の樹脂を半
田の融点程度まで加熱して軟化させた状態にして、モー
メントあるいは引っ張り力を付加するといった方法で、
半導体装置を除去する。この場合、接続に使用した樹脂
が基板に残存するとともに、基板上の配線が剥がれた
り、配線の接続部分の表面が汚染され、再接続の際に良
好な電気接続を実現できないという問題がある。In the first method, the resin on the circuit board 5 is heated to about the melting point of the solder to be in a softened state, and a moment or a tensile force is applied.
The semiconductor device is removed. In this case, there is a problem that the resin used for the connection remains on the substrate, the wiring on the substrate is peeled off, or the surface of the connection portion of the wiring is contaminated, and good electrical connection cannot be realized at the time of reconnection.

【００１３】また第２の方法においては、図６のフロー
チャートに示したように、加熱工程を２段階にすること
によりリペアが容易となるという長所を有する反面、工
程数が増加するために、半導体装置の実装を完了するま
での時間が増加し、コストの低減といったＡＣＦの長所
が失われてしまうといった欠点を有している。また仮接
続は不完全な接続状態である為、動作テストにおいて本
来良品であるものが不良と判断される可能性を有してい
る。更に、市場不良への対応を考慮に入れた場合には、
樹脂が完全硬化しているため、半導体装置を剥離し再生
するのは困難であるといった課題を有しており、従来の
方法とは異なった原理での半導体装置の除去方法が望ま
れる。In the second method, as shown in the flow chart of FIG. 6, there is an advantage that repairing is facilitated by performing the heating step in two stages, but the number of steps increases, so that the number of steps increases. There is a disadvantage that the time required to complete the mounting of the device is increased, and the advantages of the ACF such as cost reduction are lost. In addition, since the temporary connection is in an incomplete connection state, there is a possibility that an originally good product is determined to be defective in an operation test. Furthermore, when taking into account the response to market defects,
Since the resin is completely cured, it is difficult to peel and regenerate the semiconductor device, and there is a problem that a method of removing the semiconductor device based on a principle different from the conventional method is desired.

【００１４】本発明は、上記課題を解決するためになさ
れたものであって、簡単な工程で、且つ、樹脂を確実に
除去できる半導体装置の除去方法，接続方法を提供する
ことを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a method of removing a semiconductor device and a method of connecting a semiconductor device which can remove a resin reliably in a simple process. .

【００１５】[0015]

【課題を解決するための手段】請求項１に記載の半導体
装置の除去方法は、半導体装置と回路基板とがその間に
樹脂を介して接続された実装構造体における半導体装置
の除去方法において、半導体装置と回路基板間の樹脂を
熱分解温度以上に加熱した後、半導体装置を除去するも
のである。According to a first aspect of the present invention, there is provided a method of removing a semiconductor device in a mounting structure in which a semiconductor device and a circuit board are connected via a resin therebetween. The semiconductor device is removed after the resin between the device and the circuit board is heated above the thermal decomposition temperature.

【００１６】請求項２に記載の半導体装置の除去方法
は、請求項１に記載の半導体装置の除去方法において、
半導体装置の除去を、半導体装置にモーメント力を加え
て行うものである。According to a second aspect of the present invention, there is provided a method of removing a semiconductor device according to the first aspect.
The removal of the semiconductor device is performed by applying a moment force to the semiconductor device.

【００１７】請求項３に記載の半導体装置の除去方法
は、請求項１に記載の半導体装置の除去方法において、
半導体装置の除去を、半導体装置に引っ張り力を加えて
行うものである。According to a third aspect of the present invention, there is provided a method of removing a semiconductor device according to the first aspect.
The removal of the semiconductor device is performed by applying a tensile force to the semiconductor device.

【００１８】請求項４に記載の半導体装置の接続方法
は、半導体装置と回路基板とがその間に樹脂を介して接
続された実装構造体における半導体装置の接続方法であ
って、半導体装置と回路基板との間に前記樹脂を介在さ
せ、その樹脂を硬化させる工程と、その工程の後、半導
体装置を検査する工程と、その工程により不良と判定さ
れた場合に、樹脂を熱分解温度以上に加熱した後、半導
体装置を除去する工程と、を含むものである。According to a fourth aspect of the present invention, there is provided a method of connecting a semiconductor device to a mounting structure in which a semiconductor device and a circuit board are connected via a resin between the semiconductor device and the circuit board. Interposing the resin between them, curing the resin, after that, inspecting the semiconductor device, and heating the resin to a temperature equal to or higher than the thermal decomposition temperature if the process determines that the resin is defective. After that, removing the semiconductor device.

【００１９】[0019]

【発明の実施の形態】図１は、本発明の半導体装置の除
去方法・接続方法を説明するフロー図である。以下、こ
の図及び図２に示した実装構造体断面図（従来の技術の
項で説明）に基づき、本実施の形態の接続・除去方法を
説明する。なお、従来の技術の項で説明したものと同一
部分については同一符号を付し、説明を省略する。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a flowchart for explaining a method of removing and connecting a semiconductor device according to the present invention. Hereinafter, the connection / removal method according to the present embodiment will be described with reference to FIG. 2 and the sectional view of the mounting structure (described in the section of the prior art) shown in FIG. The same parts as those described in the section of the related art are denoted by the same reference numerals, and description thereof will be omitted.

【００２０】まず、ステップ１１において、半導体装置
１と回路基板５とを、半導体装置１の突起電極２が回路
基板５の接続パッドと対向するように配置する。このと
き、ＡＣＦ等の樹脂３を半導体装置１と回路基板５との
間に配置する。First, in step 11, the semiconductor device 1 and the circuit board 5 are arranged such that the protruding electrodes 2 of the semiconductor device 1 face the connection pads of the circuit board 5. At this time, a resin 3 such as an ACF is disposed between the semiconductor device 1 and the circuit board 5.

【００２１】次に、ステップ１２において、加熱しなが
ら突起電極２と接続パッド６とを密着することによりそ
れらを接続する。また、この際、樹脂３を熱により硬化
する。このとき、突起電極２と接続パッド６との接続時
の加熱によりその接続部分の樹脂が押しのけられ、導電
粒子４が介在した状態で突起電極２と接続パッド６とが
接続される。これにより、半導体装置１は回路基板５上
に本接続される。Next, in step 12, the protruding electrodes 2 and the connection pads 6 are brought into close contact with each other while heating, thereby connecting them. At this time, the resin 3 is cured by heat. At this time, heating at the time of connection between the protruding electrode 2 and the connection pad 6 displaces the resin at the connection portion, and the protruding electrode 2 and the connection pad 6 are connected with the conductive particles 4 interposed therebetween. Thereby, the semiconductor device 1 is permanently connected on the circuit board 5.

【００２２】続いて、ステップ１３において、半導体装
置１の検査を行い、不良品であるか否かを判定する。Subsequently, in step 13, the semiconductor device 1 is inspected to determine whether it is defective.

【００２３】ステップ１４において、ステップ１３で不
良品であると判定された実装構造体の樹脂３をその熱分
解温度まで加熱する。In step 14, the resin 3 of the mounting structure determined to be defective in step 13 is heated to its thermal decomposition temperature.

【００２４】そして、ステップ１５において半導体装置
１を回路基板５から除去する。そして、半導体装置を交
換して再度接続工程を行う。Then, in step 15, the semiconductor device 1 is removed from the circuit board 5. Then, the semiconductor device is replaced and the connection process is performed again.

【００２５】本発明では、以上示したように、半導体装
置の除去を、樹脂をその分解温度まで加熱することによ
り行う。これにより、半導体装置の除去が容易になり、
残存樹脂は簡単に取り除けるため、交換後の半導体装置
の再接続が容易となる。また、樹脂を熱分解温度にまで
加熱するため、樹脂の粘着力に起因して樹脂除去時に接
続配線までも剥がれてしまうようなことがなくなる。In the present invention, as described above, the semiconductor device is removed by heating the resin to its decomposition temperature. This facilitates removal of the semiconductor device,
Since the residual resin can be easily removed, reconnection of the semiconductor device after replacement becomes easy. In addition, since the resin is heated to the thermal decomposition temperature, even when the resin is removed, the connection wiring does not peel off due to the adhesive force of the resin.

【００２６】以下、本発明の半導体装置の除去方法につ
いて具体例に基づいて説明する。図２に示したような実
装構造体を作成し、半導体装置の除去状態について調べ
た結果を以下に示す。なお、半導体装置１には１０ｍｍ
×１０ｍｍ、厚０．６５ｍｍのものを使用し、回路基板
５にはＦＲ５多層基板を使用した。樹脂３としては、プ
リント配線基板上へのフリップチップ接続に一般的に用
いられている仕様のＡＣＦを用いた。なお、このＡＣＦ
の熱分解温度は約３００℃（ＤＳＣ解析による）であ
る。Hereinafter, a method for removing a semiconductor device according to the present invention will be described with reference to specific examples. The mounting structure as shown in FIG. 2 was prepared, and the result of examining the removal state of the semiconductor device is shown below. The semiconductor device 1 has a thickness of 10 mm.
The circuit board 5 used was an FR5 multilayer board having a size of × 10 mm and a thickness of 0.65 mm. As the resin 3, an ACF of a specification generally used for flip-chip connection on a printed wiring board was used. Note that this ACF
Has a thermal decomposition temperature of about 300 ° C. (according to DSC analysis).

【００２７】半導体装置１の回路基板５上への搭載は、
ＡＣＦ３の硬化率が９０％以上となる接続条件であり、
その際の接続抵抗値は良好であった。また同条件で接続
されたサンプルを信頼性試験に投入した場合、信頼性が
保たれていることを確認している。The mounting of the semiconductor device 1 on the circuit board 5
The connection conditions are such that the curing rate of ACF3 is 90% or more,
The connection resistance value at that time was good. In addition, when samples connected under the same conditions were put into a reliability test, it was confirmed that the reliability was maintained.

【００２８】以上のようにして得られた半導体装置の実
装構造体に対して、図３に示すリペアツール７を用いて
半導体装置１の除去を行った。そして、リペアツール７
により約５秒程度半導体装置１側から熱を供給してＡＣ
Ｆ３を様々な温度に加熱した状態で、その除去状態を観
測した。その結果を表１に示す。The semiconductor device 1 was removed from the mounting structure of the semiconductor device obtained as described above using the repair tool 7 shown in FIG. And repair tool 7
Supply heat from the semiconductor device 1 side for about 5 seconds
With F3 heated to various temperatures, its removal was observed. Table 1 shows the results.

【００２９】なお、リペアツール７は、図３に示すよう
に、半導体装置１の外周部分と勘合する凹部の形成され
た治具である。半導体装置１の回路基板５からの除去
は、リペアツール７を例えば図中の矢印方向に回転させ
て、実装構造体にモーメント力を加えることで行える。The repair tool 7 is, as shown in FIG. 3, a jig provided with a concave portion to be fitted to the outer peripheral portion of the semiconductor device 1. The semiconductor device 1 can be removed from the circuit board 5 by rotating the repair tool 7 in, for example, the direction of the arrow in the figure and applying a moment force to the mounting structure.

【００３０】[0030]

【表１】 [Table 1]

【００３１】上表に示すように、ＡＣＦ３の熱分解温度
である３００℃以上ではＡＣＦ３の除去は良好に行われ
た。また、半導体装置１の引き剥がし時における基板配
線の剥がれも、加熱温度が２５０℃以下では見られた
が、３００℃以上では見られなかった。ＡＣＦ３は、熱
分解温度以上に加熱されると、瞬時に変色をおこした。
また、この温度域ではＡＣＦ３は脆くなっていること
が、ピンセットなど先端が鋭利な金属で樹脂に傷をつけ
ることで確認できた。以上から、ＡＣＦ３をその熱分解
温度以上に加熱することで半導体装置の除去が容易にな
ることが分かる。但し、樹脂（ＡＣＦ）３の熱分解温度
としては４５０℃以下が望ましい。それ以上に温度が上
がると、加熱によって回路基板５自体に変質が生じた
り、隣接部品の接続半田が溶融する可能性があるためで
ある。As shown in the above table, the removal of ACF3 was favorably performed at 300 ° C. or higher, which is the thermal decomposition temperature of ACF3. In addition, peeling of the substrate wiring when peeling the semiconductor device 1 was observed at a heating temperature of 250 ° C. or lower, but was not observed at a temperature of 300 ° C. or higher. ACF3 instantly changed color when heated above the thermal decomposition temperature.
In this temperature range, ACF3 was found to be brittle by scratching the resin with a sharp-pointed metal such as tweezers. From the above, it can be seen that heating the ACF 3 above its thermal decomposition temperature facilitates removal of the semiconductor device. However, the thermal decomposition temperature of the resin (ACF) 3 is desirably 450 ° C. or lower. If the temperature rises more than that, the circuit board 5 itself may be deteriorated by heating or the connection solder of the adjacent component may be melted.

【００３２】半導体装置１の除去後、回路基板５上に熱
分解されたＡＣＦ３が残存するが、そのＡＣＦ３は大変
脆いために、綿棒などに有機溶剤をつけ、軽く擦ること
により容易に除去可能である。After the removal of the semiconductor device 1, the thermally decomposed ACF3 remains on the circuit board 5, but since the ACF3 is very brittle, it can be easily removed by applying an organic solvent to a cotton swab or the like and rubbing lightly. is there.

【００３３】なお、ここでは、リペアツール７を用い
て、モーメント力により半導体装置１を除去したが、図
４に示すように、リペアツール７’を用いて、引っ張り
力によって除去しても良い。図４では、リペアツール
７’に形成した真空吸着穴８から図示しない真空排気系
を用いて真空吸引することで、半導体装置１を吸着し引
っ張り力を加えるように構成している。このような方法
によっても、簡単に半導体装置を除去することができ
た。Here, the semiconductor device 1 is removed by the moment force using the repair tool 7, but may be removed by the pulling force using the repair tool 7 'as shown in FIG. In FIG. 4, the semiconductor device 1 is sucked and a tensile force is applied by vacuum suction using a vacuum exhaust system (not shown) from a vacuum suction hole 8 formed in the repair tool 7 '. Even by such a method, the semiconductor device could be easily removed.

【００３４】またなお、今回の実施の形態においては、
接着樹脂としてＡＣＦを用いたが、半導体装置上の突起
電極と回路基板上の配線パッド間に導電性ペーストを介
在させた後、アンダーフィルを充填させたことにより得
られる半導体の実装構造体においても、以上に記述した
方法により半導体装置の除去が可能である。In this embodiment,
Although ACF was used as the adhesive resin, a semiconductor mounting structure obtained by interposing a conductive paste between the protruding electrode on the semiconductor device and the wiring pad on the circuit board and then filling the underfill was also used. The semiconductor device can be removed by the method described above.

【００３５】また、半導体装置と回路基板間に存在する
樹脂には、ＡＣＦのようにエポキシ系を主剤とする樹脂
だけでなく、ポリイミド系、アクリル系、フェノール
系、あるいはシリコーン系といった熱硬化性樹脂が主剤
であるもの、またそれ以外に紫外線硬化型樹脂が主剤で
あっても本方法により半導体装置の除去が可能である。
これらの樹脂は、成分によっても熱分解温度が異なるも
のの、３００℃以上に加熱すれば、十分に熱分解温度に
達し得る。The resin existing between the semiconductor device and the circuit board includes not only a resin mainly composed of an epoxy resin such as ACF but also a thermosetting resin such as a polyimide resin, an acrylic resin, a phenol resin or a silicone resin. The semiconductor device can be removed by the present method even if the main component is an ultraviolet curable resin.
These resins have different thermal decomposition temperatures depending on the components, but if heated to 300 ° C. or higher, they can sufficiently reach the thermal decomposition temperature.

【００３６】更に、今回の本実施の形態においては、配
線が剥がれるといった問題が生じやすいため、半導体装
置の除去が困難であると考えられるプリント配線基板を
用いて検討を行ったが、本発明の半導体装置の除去方法
は、セラミックス、ガラス、シリコンといった回路を形
成でき、半導体装置を搭載可能な、あらゆる回路基板に
対しても有効である。Further, in the present embodiment, since the problem that the wiring is peeled is likely to occur, a study was performed using a printed wiring board which is considered to be difficult to remove the semiconductor device. The method for removing a semiconductor device is effective for any circuit substrate on which a circuit such as ceramics, glass, or silicon can be formed and on which a semiconductor device can be mounted.

【００３７】[0037]

【発明の効果】以上の説明で明らかにしたように、本発
明に係る半導体置の除去・接続方法では、不良半導体装
置を確認した場合に、リペアツールにより樹脂を熱分解
温度以上に加熱することで、樹脂に本来の特性を失わせ
て密着力を弱めるため、簡単に半導体装置を除去するこ
とができる。また、少ない工程数でのリペアが可能とな
るため、生産性を向上することができる。As has been clarified in the above description, in the method of removing and connecting a semiconductor device according to the present invention, when a defective semiconductor device is confirmed, the resin is heated to a temperature higher than the thermal decomposition temperature by a repair tool. Thus, the semiconductor device can be easily removed because the resin loses its original characteristics and the adhesion is weakened. Further, since repair can be performed with a small number of steps, productivity can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の半導体装置の除去・接続方法を説明す
るフロー図である。FIG. 1 is a flowchart illustrating a method for removing and connecting a semiconductor device according to the present invention.

【図２】半導体装置の実装構造体の一例を示す断面模式
図である。FIG. 2 is a schematic cross-sectional view illustrating an example of a mounting structure of a semiconductor device.

【図３】半導体装置をモーメント力で除去する方法を説
明する図である。FIG. 3 is a diagram illustrating a method of removing a semiconductor device by a moment force.

【図４】半導体装置を引っ張り力で除去する方法を説明
する図である。FIG. 4 is a diagram illustrating a method of removing a semiconductor device by a pulling force.

【図５】従来における半導体装置の接続・リペア方法の
第１の方法を説明するフロー図である。FIG. 5 is a flowchart illustrating a first method of a conventional connection / repair method for a semiconductor device.

【図６】従来における半導体装置の接続・リペア方法の
第２の方法を説明するフロー図である。FIG. 6 is a flowchart illustrating a second method of a conventional connection / repair method for a semiconductor device.

【符号の説明】[Explanation of symbols]

１ 半導体装置 ２ 突起電極 ３ 樹脂（ＡＣＦ） ４ 導電粒子 ５ 回路基板 ６ 接続パッド ７，７’ リペアツール ８ 真空吸着穴 DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Protruding electrode 3 Resin (ACF) 4 Conductive particle 5 Circuit board 6 Connection pad 7, 7 'Repair tool 8 Vacuum suction hole

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 半導体装置と回路基板とがその間に樹脂
を介して接続された実装構造体における半導体装置の除
去方法において、 前記半導体装置と前記回路基板間の樹脂を熱分解温度以
上に加熱した後、前記半導体装置を除去することを特徴
とする半導体装置の除去方法。1. A method of removing a semiconductor device in a mounting structure in which a semiconductor device and a circuit board are connected via a resin therebetween, wherein the resin between the semiconductor device and the circuit board is heated to a temperature higher than a thermal decomposition temperature. And removing the semiconductor device. 【請求項２】 請求項１に記載の半導体装置の除去方法
において、 前記半導体装置の除去を、前記半導体装置にモーメント
力を加えて行うことを特徴とする半導体装置の除去方
法。2. The method for removing a semiconductor device according to claim 1, wherein the removal of the semiconductor device is performed by applying a moment force to the semiconductor device. 【請求項３】 請求項１に記載の半導体装置の除去方法
において、 前記半導体装置の除去を、前記半導体装置に引っ張り力
を加えて行うことを特徴とする半導体装置の除去方法。3. The method for removing a semiconductor device according to claim 1, wherein the removal of the semiconductor device is performed by applying a tensile force to the semiconductor device. 【請求項４】 半導体装置と回路基板とがその間に樹脂
を介して接続された実装構造体における半導体装置の接
続方法であって、 前記半導体装置と前記回路基板との間に前記樹脂を介在
させ、その樹脂を硬化させる工程と、 該工程の後、前記半導体装置を検査する工程と、 該工程により不良と判定された場合に、前記樹脂を熱分
解温度以上に加熱した後、前記半導体装置を除去する工
程と、を含むことを特徴とする半導体装置の接続方法。4. A method of connecting a semiconductor device in a mounting structure in which a semiconductor device and a circuit board are connected via a resin therebetween, wherein the resin is interposed between the semiconductor device and the circuit board. Curing the resin; and after the step, inspecting the semiconductor device; and, if determined to be defective in the step, heating the resin to a temperature equal to or higher than a thermal decomposition temperature. Removing the semiconductor device.
JP32270797A 1997-11-25 1997-11-25 Removing method and connection method for semiconductor device Pending JPH11163057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32270797A JPH11163057A (en) 1997-11-25 1997-11-25 Removing method and connection method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32270797A JPH11163057A (en) 1997-11-25 1997-11-25 Removing method and connection method for semiconductor device

Publications (1)

Publication Number Publication Date
JPH11163057A true JPH11163057A (en) 1999-06-18

Family

ID=18146733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32270797A Pending JPH11163057A (en) 1997-11-25 1997-11-25 Removing method and connection method for semiconductor device

Country Status (1)

Country Link
JP (1) JPH11163057A (en)

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