JPH11140274A - Epoxy resin composition and semiconductor device - Google Patents

Epoxy resin composition and semiconductor device

Info

Publication number
JPH11140274A
JPH11140274A JP30256297A JP30256297A JPH11140274A JP H11140274 A JPH11140274 A JP H11140274A JP 30256297 A JP30256297 A JP 30256297A JP 30256297 A JP30256297 A JP 30256297A JP H11140274 A JPH11140274 A JP H11140274A
Authority
JP
Japan
Prior art keywords
epoxy resin
acrylonitrile
resin composition
weight
rubber powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30256297A
Other languages
Japanese (ja)
Inventor
Takeshi Mori
健 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP30256297A priority Critical patent/JPH11140274A/en
Publication of JPH11140274A publication Critical patent/JPH11140274A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide an epoxy resin composition having excellent tablet chipping resistance, soldering crack resistance, thermal cycling resistance and electrical insulation. SOLUTION: This resin composition contains an epoxy resin, a phenolic resin, an inorganic filler, a cure accelerator and acrylonitrile-butadiene rubber powder as essential components. The acrylonitrile-butadiene rubber powder contains carboxyl group, epoxy group or a phenolic hydroxyl group and has an acrylonitrile modification ratio of 20-50 wt.% and a particle diameter of 5-50,000 nm The amount of the acrylonitrile-butadiene rubber powder is 0.1-20 pts.wt. based on 100 pts.wt. of the total epoxy resin.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、耐タブレット欠け
性、耐半田クラック性、耐温度サイクル性及び電気絶縁
性に優れるエポキシ樹脂組成物及び半導体装置に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition excellent in tablet chipping resistance, solder crack resistance, temperature cycling resistance and electrical insulation, and a semiconductor device.

【0002】[0002]

【従来の技術】近年、IC、LSI等の半導体封止に
は、エポキシ樹脂組成物の低圧封入法が一般に用いられ
ているが、IC、LSIはQFPやSOJといった表面
実装タイプが主流となりつつあり、その要求も次第に厳
しいものになってきている。また、チップの大型化によ
り耐温度サイクル性の向上も要求されてきている。従来
の耐半田クラック用のエポキシ樹脂組成物は、耐半田ク
ラック性を目的に熱時強度の向上を行ってきた。しか
し、熱時強度の向上に伴って弾性率も増大するため、大
型のパッケージに適用すると耐温度サイクル性に問題が
生じてきた。
2. Description of the Related Art In recent years, a low-pressure encapsulation method of an epoxy resin composition has been generally used for semiconductor encapsulation of ICs and LSIs, but surface mount types such as QFPs and SOJs are becoming mainstream for ICs and LSIs. The demands are becoming increasingly demanding. In addition, improvement in temperature cycle resistance has been required due to the increase in size of chips. Conventional epoxy resin compositions for solder crack resistance have been improved in strength during heating for the purpose of solder crack resistance. However, since the elastic modulus also increases with the improvement of the strength at the time of heat, a problem has arisen in the temperature cycle resistance when applied to a large package.

【0003】この様に特に大型パッケージに対して、耐
半田クラック性と耐温度サイクル性の両立を達成するた
めには熱時強度を低下させず、弾性率を低下する必要が
ある。その具体的な手法としては種々提案されており、
一つには樹脂骨格自体を柔軟な構造にすることが実施さ
れている。また他の手法として柔らかい成分をエポキシ
樹脂組成物中に導入することにより低弾性化を図ってい
る。前者の方法では樹脂自体の粘度が増大して、ワイヤ
ー流れやパッドシフトのような成形不良を起こす可能性
があり、原料も特殊なものとなり、コストアップは避け
られない。また後者の手法のような柔らかい成分を使用
するとチップと樹脂組成物の硬化物との密着性の低下が
起こり、耐半田クラック性を著しく低下させてしまう欠
点がある。また、近年特に増加傾向にある車載用パッケ
ージや大電流を使用するパッケージにおいては、電気絶
縁性の低下は致命的な欠点となるため、耐半田クラック
性及び耐温度サイクル性に優れ、同時に電気絶縁性にも
優れた樹脂組成物の開発が強く望まれている。
As described above, in order to achieve both solder crack resistance and temperature cycle resistance, especially for a large package, it is necessary to lower the elastic modulus without lowering the strength at heat. Various specific methods have been proposed,
For one, the resin skeleton itself has a flexible structure. As another method, a low elasticity is achieved by introducing a soft component into the epoxy resin composition. In the former method, the viscosity of the resin itself increases, and there is a possibility that molding failure such as wire flow or pad shift may occur, and the raw material becomes special, so that an increase in cost is inevitable. In addition, when a soft component is used as in the latter method, the adhesion between the chip and the cured product of the resin composition is reduced, and there is a disadvantage that the solder crack resistance is significantly reduced. In addition, since the decrease in electrical insulation is a fatal drawback in automotive packages and packages that use large currents, which have been particularly increasing in recent years, they have excellent solder crack resistance and temperature cycle resistance, and at the same time, have electrical insulation. There is a strong demand for the development of a resin composition having excellent properties.

【0004】[0004]

【発明が解決しようとする課題】本発明は、熱時強度の
低下をある程度抑えながら低弾性化を図り、耐タブレッ
ト欠け性、耐半田クラック性、耐温度サイクル性に優
れ、かつ電気絶縁性にも優れたエポキシ樹脂組成物及び
これを用いた半導体装置を提供するものである。
DISCLOSURE OF THE INVENTION The present invention is intended to reduce the elasticity of a tablet while suppressing a decrease in the strength at the time of heating to some extent, and is excellent in tablet chipping resistance, solder crack resistance, temperature cycle resistance, and electric insulation. The present invention also provides an excellent epoxy resin composition and a semiconductor device using the same.

【0005】[0005]

【課題を解決するための手段】本発明は、(A)エポキ
シ樹脂、(B)フェノール樹脂、(C)無機充填材、
(D)硬化促進剤及び(E)カルボキシル基、エポキシ
基またはフェノール性水酸基を有するアクリロニトリル
変性量が20〜50重量%で粒径が5〜50000nm
のアクリロニトリル・ブタジエンゴム粉末を必須成分と
し、全エポキシ樹脂100重量部に対し、前記アクリロ
ニトリル・ブタジエンゴム粉末を0.1〜20重量部を
含むエポキシ樹脂組成物及びこれを用いたことを特徴と
する半導体装置である。
The present invention provides (A) an epoxy resin, (B) a phenolic resin, (C) an inorganic filler,
(D) a curing accelerator and (E) a modified amount of acrylonitrile having a carboxyl group, an epoxy group or a phenolic hydroxyl group of 20 to 50% by weight and a particle size of 5 to 50,000 nm.
An acrylonitrile-butadiene rubber powder as an essential component, and an epoxy resin composition containing the acrylonitrile-butadiene rubber powder in an amount of 0.1 to 20 parts by weight, based on 100 parts by weight of the total epoxy resin, and using the epoxy resin composition. It is a semiconductor device.

【0006】本発明に用いるエポキシ樹脂は、1分子中
にエポキシ基を2個以上有するモノマー、オリゴマー、
ポリマー全般を指し、特に限定するものではない。例え
ば、オルソクレゾールノボラック型エポキシ樹脂、フエ
ノールノボラック型エポキシ樹脂、ビスフェノール型エ
ポキシ樹脂、ナフトール型エポキシ樹脂、トリフェノー
ルメタン型エポキシ樹脂、トリアジン核含有エポキシ樹
脂、ビフェニル型エポキシ樹脂、スチルベン型エポキシ
樹脂等が挙げられる。樹脂組成物の耐湿性向上のために
は、塩素イオン、ナトリウムイオン等の不純物イオンが
極力少ないこと、また硬化性のためにはエポキシ当量は
150〜300が好ましい。
[0006] The epoxy resin used in the present invention is a monomer or oligomer having two or more epoxy groups in one molecule,
It refers to polymers in general and is not particularly limited. For example, ortho-cresol novolak type epoxy resin, phenol novolak type epoxy resin, bisphenol type epoxy resin, naphthol type epoxy resin, triphenolmethane type epoxy resin, triazine nucleus containing epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, etc. Can be In order to improve the moisture resistance of the resin composition, it is preferable that impurity ions such as chlorine ions and sodium ions are as small as possible. In addition, the epoxy equivalent is preferably 150 to 300 for curability.

【0007】本発明に用いるフェノール樹脂硬化剤は、
1分子中にフェノール性水酸基を有するモノマー、オリ
ゴマー、ポリマー全般を指し、特に限定するものではな
い。例えば、フェノールノボラック樹脂、ジシクロペン
タジエン変性フェノール樹脂、キシリレン変性フェノー
ル樹脂、トリフェノールメタン樹脂、及びこれらの変性
樹脂が挙げられる。樹脂組成物の耐湿性向上のために
は、塩素イオン、ナトリウムイオン等の不純物イオンが
極力少ないこと、また硬化性のためには樹脂組成物水酸
基当量は80〜250程度が好ましい。
The phenolic resin curing agent used in the present invention comprises:
It refers to all monomers, oligomers and polymers having a phenolic hydroxyl group in one molecule, and is not particularly limited. For example, a phenol novolak resin, a dicyclopentadiene-modified phenol resin, a xylylene-modified phenol resin, a triphenolmethane resin, and a modified resin thereof are exemplified. In order to improve the moisture resistance of the resin composition, it is preferable that impurity ions such as chlorine ions and sodium ions are as small as possible. In addition, in terms of curability, the hydroxyl equivalent of the resin composition is preferably about 80 to 250.

【0008】本発明に用いる無機充填材は、溶融シリカ
粉末、球状シリカ粉末、結晶シリカ粉末、アルミナ等を
使用することができるが、特に溶融シリカ粉末と球状シ
リカ粉末の混合物が望ましい。本発明に用いる硬化促進
剤は、エポキシ基とフェノール性水酸基との反応を促進
するもので有ればよく、一般に封止用樹脂組成物に用い
られているものでよい。代表的なものとしては、1,8
−ジアザビシクロ(5,4,0)ウンデセン−7、トリ
フェニルホスフィン、ベンジルジメチルアミン、2−メ
チルイミダゾール等が挙げられ、これらは単独でも併用
してもよい。
As the inorganic filler used in the present invention, fused silica powder, spherical silica powder, crystalline silica powder, alumina and the like can be used, and a mixture of fused silica powder and spherical silica powder is particularly desirable. The curing accelerator used in the present invention only needs to promote the reaction between the epoxy group and the phenolic hydroxyl group, and may be one generally used in a sealing resin composition. The typical ones are 1,8
-Diazabicyclo (5,4,0) undecene-7, triphenylphosphine, benzyldimethylamine, 2-methylimidazole and the like, which may be used alone or in combination.

【0008】本発明に用いるアクリロニトリル・ブタジ
エンゴム粉末は、アクリロニトリルとブタジエンとの共
重合体を粉砕したものであり、エポキシ樹脂あるいはフ
ェノール樹脂と反応するカルボキシル基、エポキシ基ま
たはフェノール性水酸基を含有している。アクリロニト
リルの変性量は20〜50重量%が好ましく、より好ま
しいのは25〜45重量%で、20重量%未満だと体積
抵抗率が低下し、50重量%を越えると充分な流動性が
得られず、好ましくない。粒径は5〜50000nmで
あり、5nm未満では海島構造としての応力分散が充分
でなく、50000nmを越えると分散性に劣り、ミク
ロ的なストレスが大きくなり好ましくない。一般に半導
体封止用のエポキシ樹脂組成物は、粉砕された成形材料
を常温で加圧しタブレット状に成形され供給されるが、
添加されるゴム粉末の粒径が大き過ぎると輸送途中の振
動などによってタブレットが欠けるおそれがある。粒径
としては5〜50000nmが好ましい。50000n
mを越えると、タブレットの欠ける程度が多くなる。ア
クリロニトリル・ブタジエンゴム粉末の添加量は、全エ
ポキシ樹脂100重量部に対し0.1〜20重量部が好
ましく、より好ましいのは0.1〜10重量部で、0.
1重量部未満では充分な低弾性率が得られず、20重量
部を越えると充分な流動性が得られず、好ましくない。
The acrylonitrile-butadiene rubber powder used in the present invention is obtained by pulverizing a copolymer of acrylonitrile and butadiene and contains a carboxyl group, an epoxy group or a phenolic hydroxyl group which reacts with an epoxy resin or a phenol resin. I have. The modification amount of acrylonitrile is preferably from 20 to 50% by weight, more preferably from 25 to 45% by weight, and if it is less than 20% by weight, the volume resistivity decreases, and if it exceeds 50% by weight, sufficient fluidity is obtained. Not preferred. The particle size is 5 to 50,000 nm, and if it is less than 5 nm, the stress dispersion as a sea-island structure is not sufficient, and if it exceeds 50,000 nm, dispersibility is poor and microscopic stress increases, which is not preferable. Generally, the epoxy resin composition for semiconductor encapsulation is formed by pressing a pulverized molding material at room temperature and molded into a tablet, and supplied.
If the particle size of the rubber powder to be added is too large, the tablet may be chipped due to vibration during transportation or the like. The particle size is preferably from 5 to 50,000 nm. 50,000n
If m is exceeded, the degree of chipping of the tablet increases. The addition amount of the acrylonitrile-butadiene rubber powder is preferably 0.1 to 20 parts by weight, more preferably 0.1 to 10 parts by weight, based on 100 parts by weight of the total epoxy resin.
If it is less than 1 part by weight, a sufficiently low elastic modulus cannot be obtained, and if it exceeds 20 parts by weight, sufficient fluidity cannot be obtained, which is not preferable.

【0009】本発明の樹脂組成物は、(A)〜(E)成
分の他に、必要に応じてシランカップリング剤等のカッ
プリング剤、酸化アンチモン等の難燃剤、カーボンブラ
ック等の着色剤、天然ワックス、合成ワックス等の離型
剤等の種々の添加剤を適宜配合しても差し支えない。本
発明の樹脂組成物を成形材料として製造するには、
(A)〜(E)成分、その他の添加剤をミキサー等によ
って十分に均一に常温混合した後、更に熱ロール、又は
ニーダー等で溶融混練し、冷却後粉砕して封止材料とす
ることができる。本発明の樹脂組成物を用いて、半導体
等の電子部品を封止し、半導体装置を製造するには、ト
ランスファーモールド、コンプレッションモールド、イ
ンジェクションモールド等の成形方法で硬化成形すれば
よい。
[0009] In addition to the components (A) to (E), the resin composition of the present invention may contain, if necessary, a coupling agent such as a silane coupling agent, a flame retardant such as antimony oxide, and a coloring agent such as carbon black. Various additives such as a release agent such as natural wax and synthetic wax may be appropriately compounded. To produce the resin composition of the present invention as a molding material,
After sufficiently mixing the components (A) to (E) and other additives uniformly at room temperature with a mixer or the like, the mixture is further melt-kneaded with a hot roll or a kneader, cooled, and pulverized to form a sealing material. it can. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor using the resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold.

【0010】以下本発明を実施例で具体的に説明する。 実施例1 オルソクレゾールノボラック型エポキシ樹脂(軟化点61℃、エポキシ当量2 00) 40重量部 フェノールノボラック樹脂(軟化点75℃、水酸基当量104) 20重量部 アクリロニトリル・ブタジエンゴム粉末(アクリロニトリル変性量25重量% 、平均粒径9nm) 2重量部 1,8−ジアザビシクロ(5、4、0)ウンデセン−7(以下、DBU) 1重量部 シリカ粉末 650重量部 シランカップリング剤 4重量部 臭素化エポキシ樹脂 15重量部 三酸化アンチモン 1重量部 カーボンブラック 2重量部 カルナバワックス 5重量部 各成分を配合し、ヘンシェルミキサーにて常温で混合し
た後、70〜100℃で二軸ロールにて混練し、これを
冷却後粉砕して成形材料とした。粉砕して得られた成形
材料をタブレット化し、低圧トランスファー成形機にて
175℃、70kg/cm2、120秒の条件で半田ク
ラック性、耐温度サイクル性試験用として9×9mmの
チップを80pQFPに封止し、体積抵抗率測定用とし
て直径100mm、厚さ3mmの円盤を成形した。後硬
化は175℃の条件で8時間行った。 半田クラック性:封止したテスト用素子を85℃、相対
湿度60%、168時間の条件で吸湿させた後、IRリ
フロー(240℃、10秒)を3回行い、パッケージク
ラックの有無を判定。 耐温度サイクル性:封止したテスト用素子を、−65℃
〜150℃で1000サイクル繰り返し、パッケージク
ラックの有無を判定。 体積抵抗率:150℃の雰囲気中に30分間テスト用成
形品を放置し、試験用成形品の両表面に電極を接続し、
直流電流500Vで1分間充電し体積抵抗率を測定。 タブレット欠け性:タブレット20個を秤量してから箱
の中に入れ、5分間振動を加え、粉末を除去した後に再
度秤量を行う。重量変化によってタブレットの欠け性を
評価。 流動性:EMMI−I−66に準じたスパイラルフロー
測定用金型を用い、試料を15g、成形温度175℃、
成形圧力7.0Pa、成形時間2分で成形したときの成
形品の長さ。結果を表1に示す。
Hereinafter, the present invention will be described specifically with reference to examples. Example 1 Orthocresol novolak type epoxy resin (softening point: 61 ° C., epoxy equivalent: 200) 40 parts by weight Phenol novolak resin (softening point: 75 ° C., hydroxyl equivalent: 104) 20 parts by weight Acrylonitrile / butadiene rubber powder (acrylonitrile modified amount: 25 parts by weight) %, Average particle size 9 nm) 2 parts by weight 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter, DBU) 1 part by weight Silica powder 650 parts by weight Silane coupling agent 4 parts by weight Brominated epoxy resin 15 Parts by weight antimony trioxide 1 part by weight carbon black 2 parts by weight carnauba wax 5 parts by weight After blending each component, mixing at room temperature with a Henschel mixer, kneading at 70-100 ° C with a biaxial roll, and cooling. Thereafter, it was pulverized to obtain a molding material. The molding material obtained by the pulverization is tabletted, and a 9 × 9 mm chip is formed into a 80 pQFP using a low-pressure transfer molding machine at 175 ° C., 70 kg / cm 2 , for 120 seconds under conditions of solder cracking and temperature cycle resistance testing. It sealed and formed the disk of diameter 100mm and thickness 3mm for volume resistivity measurement. Post-curing was performed at 175 ° C. for 8 hours. Solder crackability: After the sealed test element was absorbed under the conditions of 85 ° C. and 60% RH for 168 hours, IR reflow (240 ° C., 10 seconds) was performed three times to determine the presence or absence of a package crack. Temperature cycle resistance: Sealed test element at -65 ° C
Repeat 1000 cycles at ~ 150 ° C to determine the presence or absence of package crack. Volume resistivity: The test molded product was left in an atmosphere of 150 ° C. for 30 minutes, electrodes were connected to both surfaces of the test molded product,
Charge for 1 minute with DC current of 500V and measure volume resistivity. Tablet chipping property: Twenty tablets are weighed, placed in a box, vibrated for 5 minutes to remove powder, and weighed again. Evaluate the chipping of tablets by weight change. Fluidity: Using a mold for measuring spiral flow according to EMMI-I-66, 15 g of sample, molding temperature of 175 ° C,
The length of a molded product when molded at a molding pressure of 7.0 Pa and a molding time of 2 minutes. Table 1 shows the results.

【0011】実施例2、3は表1の配合に従って、実施
例1と同様にして成形材料を作成し、実施例1と同様に
して評価した。結果を表1に示す。また、配合における
数字は全て重量部である。比較例1〜4は表2の配合に
従って、実施例1と同様にして成形材料を作成し、実施
例1と同様にして評価した。結果を表2に示す。また、
配合における数字は全て重量部である。
In Examples 2 and 3, a molding material was prepared in the same manner as in Example 1 according to the composition shown in Table 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. In addition, all figures in the formulations are parts by weight. In Comparative Examples 1 to 4, molding materials were prepared in the same manner as in Example 1 according to the formulations in Table 2, and evaluated in the same manner as in Example 1. Table 2 shows the results. Also,
All figures in the formulations are parts by weight.

【0012】[0012]

【表1】 実施例1 実施例2 実施例3 エポキシ樹脂 40 40 40 フェノールノボラック樹脂 20 20 20 アクリロニトリルゴム粉末 2 2 2 (アクリロニトリル変性量) (重量%) 25 35 45 (平均粒径、nm) 9 9 9 DBU 1 1 1 シリカ粉末 650 650 650 シランカップリング剤 4 4 4 臭素化エポキシ樹脂 15 15 15 三酸化アンチモン 1 1 1 カーボンブラック 2 2 2カルナバワックス 5 5 5 半田クラック性 0/10 0/10 0/10 (クラック数/サンプル数) 耐温度サイクル性 0/10 0/10 0/10 (クラック数/サンプル数) 体積抵抗率(Ω.cm) 5×1012 8×1013 5×1014 タブレット欠け性 (減少重量%) 2.8 2.6 2.2 流動性(cm) 110 96 92Table 1 Example 1 Example 2 Example 3 Epoxy resin 40 40 40 Phenol novolak resin 20 20 20 Acrylonitrile rubber powder 22 2 (Acrylonitrile modification amount) (% by weight) 25 35 45 (Average particle size, nm) 9 9 9 DBU 11 1 Silica powder 650 650 650 Silane coupling agent 4 4 4 Brominated epoxy resin 15 15 15 Antimony trioxide 11 1 Carbon black 2 2 2 Carnauba wax 5 5 5 Solder crackability 0/10 0/10 0/10 (number of cracks / number of samples) Temperature cycle resistance 0/10 0/10 0/10 (number of cracks / number of samples) Volume resistivity (Ω.cm) 5 × 10 12 8 × 10 13 5 × 10 14 Tablet chipping (reduced weight%) 2.8 2.6 2.2 Flowability (cm) 110 96 92

【0013】[0013]

【表2】 比較例1 比較例2 比較例3 比較例4 エポキシ樹脂 40 40 40 40 フェノールノボラック樹脂 20 20 20 20 アクリロニトリルゴム粉末 0 10 2 2 (アクリロニトリル変性量) (重量%) 35 35 55 (平均粒径、nm) 9 70000 9 DBU 1 1 1 1 シリカ粉末 650 650 650 650 シランカップリング剤 4 4 4 4 臭素化エポキシ樹脂 15 15 15 15 三酸化アンチモン 1 1 1 1 カーボンブラック 2 2 2 2カルナバワックス 5 5 5 5 半田クラック性 2/10 0/10 0/10 0/10 (クラック数/サンプル数) 耐温度サイクル性 4/10 0/10 0/10 0/10 (クラック数/サンプル数) 体積抵抗率(Ω.cm) 5×1016 2×109 8×1011 5×1015 タブレット欠け性 (減少重量%) 2.7 4.5 5.6 2.2 流動性(cm) 124 52 83 64Table 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Epoxy resin 40 40 40 40 Phenol novolak resin 20 20 20 20 Acrylonitrile rubber powder 0 10 22 (Acrylonitrile modification amount) (% by weight) 35 35 55 (Average) 9 700000 9 DBU 1 11 1 Silica powder 650 650 650 650 Silane coupling agent 4 4 4 4 Brominated epoxy resin 15 15 15 15 Antimony trioxide 1 1 1 1 1 Carbon black 2 2 2 2 Carnauba wax 5 5 5 5 Solder cracking property 2/10 0/10 0/10 0/10 (number of cracks / number of samples) Temperature cycle resistance 4/10 0/10 0/10 0/10 (number of cracks / number of samples) Volume resistivity (Ω.cm) 5 × 10 16 2 × 10 9 8 × 10 11 5 × 10 15 Tablet Doo chipping (weight loss%) 2.7 4.5 5.6 2.2 flowability (cm) 124 52 83 64

【0014】[0014]

【発明の効果】本発明のエポキシ樹脂組成物は、タブレ
ット欠けの問題がなく、またこの樹脂組成物で封止され
た半導体装置は、耐半田クラック性、耐温度サイクル性
及び電気絶縁性に優れており、IC、LSIの高信頼性
要求に対して広範囲に適用できる。
The epoxy resin composition of the present invention has no tablet chipping problem, and a semiconductor device sealed with this resin composition has excellent solder cracking resistance, temperature cycle resistance, and electrical insulation. It can be widely applied to high reliability requirements of ICs and LSIs.

フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 23/29 H01L 23/30 R 23/31 //(C08L 63/00 9:02) Continued on the front page (51) Int.Cl. 6 Identification symbol FI H01L 23/29 H01L 23/30 R 23/31 // (C08L 63/00 9:02)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 (A)エポキシ樹脂、(B)フェノール
樹脂、(C)無機充填材、(D)硬化促進剤及び(E)
カルボキシル基、エポキシ基またはフェノール性水酸基
を有するアクリロニトリル変性量が20〜50重量%で
粒径が5〜50000nmのアクリロニトリル・ブタジ
エンゴム粉末を必須成分とし、全エポキシ樹脂100重
量部に対し、前記アクリロニトリル・ブタジエンゴム粉
末を0.1〜20重量部を含むことを特徴とするエポキ
シ樹脂組成物。
1. An epoxy resin (A), a phenolic resin (B), an inorganic filler (C), a curing accelerator (D), and (E)
An acrylonitrile-butadiene rubber powder having a carboxyl group, an epoxy group or a phenolic hydroxyl group and having an acrylonitrile modification amount of 20 to 50% by weight and a particle diameter of 5 to 50,000 nm is an essential component, and 100 parts by weight of the acrylonitrile. An epoxy resin composition comprising 0.1 to 20 parts by weight of butadiene rubber powder.
【請求項2】 請求項1記載のエポキシ樹脂組成物で封
止されたことを特徴とする半導体装置。
2. A semiconductor device sealed with the epoxy resin composition according to claim 1.
JP30256297A 1997-11-05 1997-11-05 Epoxy resin composition and semiconductor device Pending JPH11140274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30256297A JPH11140274A (en) 1997-11-05 1997-11-05 Epoxy resin composition and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30256297A JPH11140274A (en) 1997-11-05 1997-11-05 Epoxy resin composition and semiconductor device

Publications (1)

Publication Number Publication Date
JPH11140274A true JPH11140274A (en) 1999-05-25

Family

ID=17910477

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH11140274A (en)

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* Cited by examiner, † Cited by third party
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JP2002275241A (en) * 2001-03-19 2002-09-25 Hitachi Chem Co Ltd Insulating resin composition, use thereof and method for producing circuit board
WO2006059542A1 (en) * 2004-11-30 2006-06-08 Sumitomo Bakelite Co., Ltd. Epoxy resin composition and semiconductor devices
WO2006098425A1 (en) * 2005-03-16 2006-09-21 Sumitomo Bakelite Co., Ltd. Epoxy resin composition and semiconductor device
JP2006274184A (en) * 2005-03-30 2006-10-12 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2007224219A (en) * 2006-02-24 2007-09-06 Sumitomo Bakelite Co Ltd Epoxy resin composition for sealing semiconductor and semiconductor device
JP2007231128A (en) * 2006-02-28 2007-09-13 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002275241A (en) * 2001-03-19 2002-09-25 Hitachi Chem Co Ltd Insulating resin composition, use thereof and method for producing circuit board
US8697803B2 (en) 2004-10-19 2014-04-15 Sumitomo Bakelite Company, Ltd. Epoxy resin composition and semiconductor device
WO2006059542A1 (en) * 2004-11-30 2006-06-08 Sumitomo Bakelite Co., Ltd. Epoxy resin composition and semiconductor devices
US8324326B2 (en) 2004-11-30 2012-12-04 Sumitomo Bakelite Company, Ltd. Epoxy resin composition and semiconductor device
US8519067B2 (en) 2004-11-30 2013-08-27 Sumitomo Bakelite Co., Ltd. Epoxy resin composition and semiconductor device
US8921461B2 (en) 2004-11-30 2014-12-30 Sumitomo Bakelite Co., Ltd Epoxy resin composition and semiconductor device
WO2006098425A1 (en) * 2005-03-16 2006-09-21 Sumitomo Bakelite Co., Ltd. Epoxy resin composition and semiconductor device
US7977412B2 (en) * 2005-03-16 2011-07-12 Sumitomo Bakelite Company, Ltd. Epoxy resin composition and semiconductor device
JP5487540B2 (en) * 2005-03-16 2014-05-07 住友ベークライト株式会社 Epoxy resin composition and semiconductor device
JP2006274184A (en) * 2005-03-30 2006-10-12 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2007224219A (en) * 2006-02-24 2007-09-06 Sumitomo Bakelite Co Ltd Epoxy resin composition for sealing semiconductor and semiconductor device
JP2007231128A (en) * 2006-02-28 2007-09-13 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

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