JPH11133196A - Electron beam irradiating device - Google Patents
Electron beam irradiating deviceInfo
- Publication number
- JPH11133196A JPH11133196A JP9311205A JP31120597A JPH11133196A JP H11133196 A JPH11133196 A JP H11133196A JP 9311205 A JP9311205 A JP 9311205A JP 31120597 A JP31120597 A JP 31120597A JP H11133196 A JPH11133196 A JP H11133196A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- mask
- irradiation
- tip
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、電子線を被処理
物に照射して化学反応などを促進する電子線照射装置に
おいてマスクの端部におけるビームの切れをより鋭くす
るビーム端部改善に関するものである。電子線照射装置
というのは真空中で電子を発生し、これを加速し照射窓
の窓箔を通して大気中に取りだしこれを被照射物に当て
るものである。高分子の架橋反応を促進し、電線被覆の
耐熱性の向上、発泡ポリエチレンの品質向上、自動車用
タイヤの品質改善、包装用フィルムの改質、凹版印刷、
粘着剤、転写フィルムなどにも使われる。更にまた医療
用機具などの滅菌殺菌に用いられる。加速エネルギーは
２００ｋｅＶ〜５ＭｅＶと広範囲に渡る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam irradiation apparatus for irradiating an object to be processed with an electron beam to promote a chemical reaction and the like, and to an improvement in a beam end portion which sharpens a beam at an end portion of a mask. It is. The electron beam irradiator generates electrons in a vacuum, accelerates the electrons, extracts the electrons through the window foil of the irradiation window into the atmosphere, and irradiates the objects to be irradiated. Accelerates the crosslinking reaction of the polymer, improves the heat resistance of the wire coating, improves the quality of foamed polyethylene, improves the quality of automobile tires, modifies the packaging film, intaglio printing,
It is also used for adhesives and transfer films. Furthermore, it is used for sterilization and sterilization of medical equipment and the like. The acceleration energy ranges from 200 keV to 5 MeV.
【０００２】[0002]
【従来の技術】電子線照射装置には走査型と非走査型の
ものがある。走査型はエネルギーが高くて細いビームを
左右に振って被処理物の全面に電子線が当たるようにす
るものである。非走査型は平行な複数本のフィラメント
から熱電子を発生させ初めから広い断面積のビームを作
り出すものである。これを一方向に一様に加速して被処
理物に照射するようになっている。非走査型のものはエ
リア型とも呼ぶ。走査機構がないのでフィラメントのす
ぐ近くに照射窓がありここに窓箔が張ってある。窓箔の
外は大気圧である。ここには搬送装置がある。搬送コン
ベヤによって被処理物が入口から照射窓の下を通って出
口まで運ばれる。照射窓の直下で電子線を受けて架橋反
応、殺菌作用などの処理を受ける。2. Description of the Related Art There are a scanning type and a non-scanning type electron beam irradiation apparatus. In the scanning type, a narrow beam having a high energy is swung right and left so that an electron beam hits the entire surface of the object to be processed. The non-scanning type generates thermoelectrons from a plurality of parallel filaments to create a beam having a wide cross-sectional area from the beginning. This is uniformly accelerated in one direction to irradiate the workpiece. A non-scan type is also called an area type. Since there is no scanning mechanism, there is an irradiation window in the immediate vicinity of the filament, and here the window foil is stretched. The outside of the window foil is at atmospheric pressure. Here is the transport device. An object to be processed is carried from the entrance to the exit by passing through the conveyor below the irradiation window. It receives an electron beam immediately below the irradiation window and undergoes processing such as a crosslinking reaction and a bactericidal action.
【０００３】本発明は非走査型の電子線照射装置の改良
に関する。ビームの断面積が広ければ大型の被処理物の
電子線照射処理ができる。しかし断面積が広いと電流が
増えパワーも大きくなるから電力費が増大する。コンベ
ヤの搬送方向をｘ方向、電子線の方向をｚ方向とする。
図５にフィラメント、被処理物の概略の関係を示す。フ
ィラメントは複数本のＷ線などを平行に設けたものであ
る。並列接続のこともあり蛇行させて直列に接続するこ
ともある。フィラメントはｘｙ面に平行な広がりを持っ
ている。フィラメントのｘｙ面の広がりにより電子線ビ
ームはＸ×Ｙの面積をもつとする。搬送方向がｘ方向で
あるから、ビーム断面積の奥行きＸはビーム照射量を規
定する。ビーム断面積の横方向の広がり（幅）Ｙは、被
処理物の幅Ｂより僅かに大きければ良い（Ｙ＞Ｂ）。通
常はフィラメントから発生した電子を窓に向けて加速し
そのまま窓箔を通し被処理物に当てる。ビーム幅Ｙが被
処理物の幅Ｂより大きい場合、（Ｙ−Ｂ）の部分のビー
ムは搬送装置に当たることになり無駄である。無駄であ
るが別段差し支えない事である。被処理物の全面を覆う
ように電子線ビームが当たれば良いのである。The present invention relates to an improvement in a non-scanning type electron beam irradiation device. If the cross-sectional area of the beam is large, a large object can be irradiated with an electron beam. However, when the cross-sectional area is large, the current increases and the power also increases, so that the power cost increases. The conveying direction of the conveyor is the x direction, and the direction of the electron beam is the z direction.
FIG. 5 shows a schematic relationship between the filament and the object to be processed. The filament has a plurality of W lines provided in parallel. They may be connected in parallel or meandered and connected in series. The filament has a spread parallel to the xy plane. It is assumed that the electron beam has an area of X × Y due to the spread of the xy plane of the filament. Since the transport direction is the x direction, the depth X of the beam cross-sectional area defines the beam irradiation amount. The lateral spread (width) Y of the beam cross-sectional area may be slightly larger than the width B of the object to be processed (Y> B). Usually, electrons generated from the filament are accelerated toward the window, and are directly passed through the window foil to strike the object to be processed. If the beam width Y is larger than the width B of the object to be processed, the beam in the portion of (Y-B) hits the transport device and is useless. Although it is useless, there is no problem. It suffices if the electron beam is applied so as to cover the entire surface of the object.
【０００４】[0004]
【発明が解決しようとする課題】ところが被処理物の大
部分には電子ビームを当てて処理したいが、端の部分に
は電子ビームを当てたくないという場合が希にある。図
６にそのような場合のフィラメント、被処理物の関係を
示す。つまり被処理物Ｗの中央部Ｓ0 は電子線処理が必
要であり、両端部Ｓ1 、Ｓ2 には電子線を当てたくない
という場合である。このようなことはあまりないが、ご
くたまにあることである。この場合、Ｓ1、Ｓ0 、Ｓ2
がｙ方向に並ぶようにコンベヤに置いて、幅Ｑの部分Ｓ
0 だけに電子線を当てるようにすれば良い。そのために
は走査型の場合は走査幅を減らしてやれば良い。しかし
非走査型の場合は簡単でない。フィラメントの広がりに
よってＸ×Ｙの断面積の広いビームが発生するので、幅
Ｙの全体にビームが出る。被処理物の幅Ｂのうち（Ｂ＜
Ｙ）、真中のＱにだけビームを当てるという訳にはゆか
ない。その場合はフィラメントを交換してビーム断面積
がＸ×Ｑのより小型のフィラメントを採用するというこ
とが考えられる。フィラメントを交換するのは局所照射
に有効であろう。しかしそのような小型のフィラメント
が常にあるとは限らない。また交換に時間が掛かる。こ
れまで使ってきたＸ×Ｙの既設のフィラメントによって
幅Ｑだけ局所照射したいものである。However, there are rare cases where it is desired to treat most of the object by applying an electron beam, but not to apply an electron beam to an end portion. FIG. 6 shows the relationship between the filament and the workpiece in such a case. That central portion S 0 of the workpiece W is required electron beam treatment, the both end portions S 1, S 2 is the case do not want against the electron beam. This is rare, but only occasionally. In this case, S 1 , S 0 , S 2
Are placed on the conveyor so that
It suffices to apply an electron beam only to 0 . For that purpose, in the case of the scanning type, the scanning width may be reduced. However, it is not easy in the case of the non-scan type. Since a beam having a wide X × Y cross-sectional area is generated by the spread of the filament, the beam is emitted over the entire width Y. Of the width B of the workpiece, (B <
Y), it cannot be said that the beam is focused only on the middle Q. In that case, it is conceivable that the filament is replaced and a smaller filament having a beam cross-sectional area of X × Q is used. Changing filaments may be effective for local irradiation. However, such small filaments are not always present. In addition, it takes time to exchange. It is desired to locally irradiate only the width Q by using the existing X × Y filaments used so far.
【０００５】これまでそのような局所照射の要求がなか
ったので解決手段が検討される事はなかった。本発明
は、非走査型電子線照射装置において、両端部または片
端部に電子線を照射してはいけない被処理物を処理する
場合に、端部の電子線ビームを遮断できるようにした工
夫を与える事を目的とする。単に端部の電子線ビームを
遮断するだけでなく、ビーム分布の変化を鋭くして電子
線照射のダレがないようにした電子線照射装置を提供す
る。Until now, there has been no request for such local irradiation, and no solution has been considered. The present invention provides a non-scanning type electron beam irradiation device, in which, when processing an object to be processed which is not to be irradiated with an electron beam at both ends or one end, an electron beam at the end can be cut off. The purpose is to give. Provided is an electron beam irradiation apparatus which not only blocks an electron beam at an end but also sharpens a change in beam distribution so as to prevent sagging of electron beam irradiation.
【０００６】[0006]
【課題を解決するための手段】真空中で縦横方向に広が
ったフィラメントによって縦横方向に広がった断面積を
持つ電子線を発生させ、加速して窓箔を通して大気中に
取りだし、大気中で搬送装置によって一方向に搬送され
る被処理物に電子線を照射するようにした電子線照射装
置において、窓箔と被処理物の間に、搬送方向に対して
直角に進退自在で先端に先細りの傾斜面を有するビーム
マスクを両側或いは一方に設置し、ビームマスク先端を
被処理物の電子線照射を不要とする部分と、電子線照射
を必要とする部分の境界に合わせることによって、被処
理物に対して局所的に電子線照射するようにした。Means for Solving the Problems An electron beam having a cross-sectional area expanded in the vertical and horizontal directions is generated by a filament expanded in the vertical and horizontal directions in a vacuum, accelerated and taken out to the atmosphere through a window foil, and then transported in the air. In an electron beam irradiation device that irradiates an object to be processed conveyed in one direction with an electron beam, a taper is formed between the window foil and the object to be processed so that it can move back and forth at right angles to the direction of conveyance and tapers to the tip. A beam mask having a surface is installed on both sides or one side, and the tip of the beam mask is aligned with the boundary between the part of the object that does not require electron beam irradiation and the part of the object that requires electron beam irradiation. On the other hand, electron beam irradiation was performed locally.
【０００７】ビームマスクの先端が先細りであるという
点が重要である。もしもビームマスク先端が水平面と直
角であって太いものであると端部でのビームの広がりが
ブロードになって、Ｓ0 に当たるべき電子ビームのロス
が増える。またＳ1 、Ｓ2 など電子線を当ててはいけな
い部分にも電子線が当たってしまう。It is important that the tip of the beam mask is tapered. If the beam mask tip becomes spread of the beam is broad at the end those thick a right angle with the horizontal plane, the loss of the electron beam to strike the S 0 is increased. In addition, the electron beam is also applied to a portion where the electron beam should not be applied, such as S 1 and S 2 .
【０００８】[0008]
【発明の実施の形態】被処理物の中央部Ｓ0 に電子線を
当て、両端Ｓ1 、Ｓ2 または片端Ｓ1 に電子線を当てて
はいけない部位があるとすると、搬送方向に対して直角
な方向に移動できるビームマスクを両側、または片側に
設ければ良い。ビームマスクの先端がテーパー状になっ
ているので電子線照射分布の切れが良い。単にビームマ
スクを付けるというだけでなくて、先端を傾斜状に形成
しているので電子線分布の切れがよい。Against an electron beam in the central portion S 0 of the DETAILED DESCRIPTION OF THE INVENTION The object to be processed, when there are sites do not hit the electron beam across S 1, S 2 or one end S 1, to the transport direction What is necessary is just to provide the beam mask which can be moved in a perpendicular direction on both sides or one side. Since the tip of the beam mask is tapered, the distribution of the electron beam irradiation is good. In addition to simply attaching a beam mask, the tip is formed in an inclined shape, so that the electron beam distribution is cut easily.
【０００９】図１は本発明の実施例を示す側断面図であ
る。図２は正面断面図である。これは非走査型の電子線
照射装置である。非走査型（エリヤ型）真空チャンバ１
の内部にはフィラメント２がありここから熱電子５が出
るようになっている。真空チャンバ１の下端は開口にな
っており閉じられた筐体３の開口部につながっている。
筐体３の下方は大気圧であり真空チャンバ１の内部は真
空である。その境の開口が照射窓４である。チャンバ１
の真空を維持するために照射窓には窓箔６が張られてい
る。FIG. 1 is a side sectional view showing an embodiment of the present invention. FIG. 2 is a front sectional view. This is a non-scanning type electron beam irradiation device. Non-scan type (area type) vacuum chamber 1
Is provided with a filament 2 from which thermoelectrons 5 are emitted. The lower end of the vacuum chamber 1 is open and is connected to the opening of the closed housing 3.
The lower part of the housing 3 is at atmospheric pressure, and the inside of the vacuum chamber 1 is at a vacuum. The opening at the boundary is the irradiation window 4. Chamber 1
A window foil 6 is stretched over the irradiation window in order to maintain a vacuum.
【００１０】窓箔６はＡｌ、Ｔｉの箔であり長方形状で
開口フランジと窓箔押さえの間に固定される。照射窓４
の直下には搬送コンベヤ７があり被処理物８を搬送して
いる。搬送方向をｘ方向とする。電子線５の方向をｚ方
向とする。被処理物８のコンベヤ７での横方向の広がり
がｙ方向である。被処理物８の中央部Ｓ0 のみが電子線
照射を必要とする。両端Ｓ1 ，Ｓ2 は電子線被爆しては
ならない部分である。その境界が、ビームマスク９の先
端に合わしてある。The window foil 6 is a foil of Al or Ti and is rectangular and fixed between the opening flange and the window foil holder. Irradiation window 4
A transport conveyor 7 is provided directly below the workpiece 8 to transport the workpiece 8. The transport direction is the x direction. Let the direction of the electron beam 5 be the z direction. The horizontal spread of the workpiece 8 on the conveyor 7 is the y direction. Only the central portion S 0 of the workpiece 8 requires an electron beam irradiation. Both ends S 1 and S 2 are parts that must not be exposed to electron beams. The boundary is aligned with the tip of the beam mask 9.
【００１１】照射窓から出た電子線５がビームマスク９
によって制限され、被処理物８の中央のＳ0 に当たり電
子線処理をする。つぎつぎと被処理物が処理されてい
く。本発明の特徴は、照射窓と被処理物の間の位置に進
退自在にビームマスク９を設けたところにある。ビーム
マスク９はｘ方向には十分な広さを持ち、搬送方向と直
角のｙ方向には進退自在である。しかも先端が傾斜面１
０になっている。これが重要である。両側にビームマス
ク９がありこれが同時に反対方向に進退するようにすれ
ば、電子線５の照射域を広くしたり狭くしたりすること
ができる。これは両側にあるので両開きビームマスクに
なる。しかし、搬送経路の片側だけに設ける事もでき
る。その場合は片開きビームマスクとなる。電子線が直
進するならビームマスクの先端に被処理物のＳ0 ／Ｓ1
の境界、Ｓ0 ／Ｓ2 の境界を単に合わせるだけでよい。
しかし実際には電子線は直進しないので回り込みがあ
る。The electron beam 5 emitted from the irradiation window is applied to a beam mask 9.
, And hits the center S 0 of the object 8 to perform electron beam processing. The objects to be processed are processed one after another. A feature of the present invention resides in that a beam mask 9 is provided at a position between an irradiation window and an object to be processed so as to be able to move forward and backward. The beam mask 9 has a sufficient size in the x direction, and is movable back and forth in the y direction perpendicular to the transport direction. Moreover, the tip is inclined surface 1
It is 0. This is important. If the beam masks 9 are provided on both sides and are simultaneously moved in the opposite directions, the irradiation area of the electron beam 5 can be widened or narrowed. This is a double-sided beam mask because it is on both sides. However, it can also be provided on only one side of the transport path. In that case, a one-sided beam mask is used. S of the object at the tip of the beam the mask if an electron beam is straight 0 / S 1
And the boundary of S 0 / S 2 may be simply adjusted.
However, since the electron beam does not travel straight, there is a wraparound.
【００１２】図４に片側だけの拡大断面図をしめす。真
空チャンバ１の下端のフランジ１１に、四辺形枠状のウ
インドウ１４があてがわれ、さらに箔押え板１２が固定
される。ウインドウ１４と箔押さえ板１２との間に窓箔
６の四周が挟み込まれている。箔押え板１２とフランジ
１１は多数のボルト（図示しない）によって締結されて
いる。電子線５と直角の方向に平行な面をもつビームマ
スク９が、照射窓４の直下にｙ方向（搬送方向と直角）
に進退自在、ｚ方向に昇降自在に設けられる。一点鎖線
が被処理物の高さである。ビームマスクと被処理物間隔
のｚ方向の調節幅ｈは５〜８ミリである。ビームマスク
９のｙ方向の調節幅ｋは照射窓開口の全幅Ｑの半分Ｑ／
２以下の適当な値とする（ｋ≦Ｑ／２）。FIG. 4 is an enlarged sectional view of only one side. A rectangular frame-shaped window 14 is applied to a flange 11 at the lower end of the vacuum chamber 1, and a foil presser plate 12 is further fixed. Four rounds of the window foil 6 are sandwiched between the window 14 and the foil holding plate 12. The foil holding plate 12 and the flange 11 are fastened by a number of bolts (not shown). A beam mask 9 having a surface parallel to a direction perpendicular to the electron beam 5 is provided directly below the irradiation window 4 in the y direction (perpendicular to the transport direction).
And can be moved up and down in the z direction. The dashed line is the height of the object. The adjustment width h of the distance between the beam mask and the object to be processed in the z direction is 5 to 8 mm. The adjustment width k of the beam mask 9 in the y direction is a half Q / of the total width Q of the irradiation window opening.
An appropriate value of 2 or less (k ≦ Q / 2).
【００１３】ｙ方向の進退はボルトをゆるめて手動でビ
ームマスクを動かすようにしても良いし、電動器と減速
機を組み合わせて自動的に行うようにしても良い。縦方
向の調節は調整ボルトを廻す事によって行っても良いし
電動器と減速機によって自動的に行っても良い。図４に
おいてビームマスク１０の端部のｙ座標が小さいと開口
部が狭い。Ｓ0 の幅の狭い被処理物の処理に適する。ビ
ームマスクの端部のｙ座標を増やすと開口部が広がるの
で、Ｓ0 の幅の広い被処理物の処理に適する。端部ｙ座
標の大きさは被処理物のＳ0 の幅によって適当に決め
る。The forward / backward movement in the y direction may be performed by manually loosening the bolt to move the beam mask, or automatically by combining a motor and a speed reducer. The adjustment in the vertical direction may be performed by turning an adjustment bolt, or may be automatically performed by a motor and a speed reducer. In FIG. 4, when the y coordinate of the end of the beam mask 10 is small, the opening is narrow. Suitable processing narrow object to be processed having width of S 0. Since the opening is widened by increasing the y-coordinate of the end portion of the beam mask, suitable for processing a wide object to be processed having width of S 0. The size of the end y coordinate suitably determined by the width of the S 0 of the object.
【００１４】ビームマスク９の先端１０が傾斜している
事が重要であり、傾斜角は３０゜〜６０゜の程度とす
る。４５゜が最適である。ビームマスクの厚みは電子線
を遮断できる厚みであれば任意である。５ｍｍ〜３０ｍ
ｍ程度である。ここでは例えば２０ｍｍの厚みのステン
レス板をビームマスクとする。ビームマスク９がどうし
て先端が傾斜面１０となっているのか、その理由を述べ
る。It is important that the tip 10 of the beam mask 9 is inclined, and the inclination angle is set to about 30 ° to 60 °. 45 ° is optimal. The thickness of the beam mask is arbitrary as long as it can block an electron beam. 5mm-30m
m. Here, a stainless steel plate having a thickness of, for example, 20 mm is used as the beam mask. The reason why the tip of the beam mask 9 is the inclined surface 10 will be described.
【００１５】本発明者は初め図３に示すような端部２０
が面に直交するようなビームマスク１９を作製した。す
ると被処理物面での電子線照射量がグラフにしめすよう
にビームマスクの端部においてなだらかな裾を引く事が
分かった。直角面２０のｙ座標をｆとすると、それより
内側のｇ点から既に電子線照射量が低下し始める。ｆよ
り外側においても電子線量は０にならずｅ点まで徐々に
減衰する。被処理物の中央部の必要部分Ｓ0 には一様な
密度で電子線を照射する必要がある。端のＳ1、Ｓ2 に
は電子線を当てないようにする必要がある。ために被処
理物７のＳ0 ／Ｓ1 の境界をｆ点に合わせる。The inventor has initially determined that the end 20 shown in FIG.
The beam mask 19 was manufactured such that the direction was perpendicular to the plane. Then, it was found that the amount of electron beam irradiation on the surface of the object to be processed had a gentle tail at the end of the beam mask as shown in the graph. Assuming that the y coordinate of the right-angled surface 20 is f, the electron beam irradiation amount starts to decrease from point g inside the y coordinate. Even outside of f, the electron dose does not become 0 but gradually attenuates to point e. The necessary portion S 0 of the central portion of the workpiece is necessary to irradiate an electron beam in a uniform density. It is necessary to prevent electron beams from being applied to the ends S 1 and S 2 . For this purpose, the boundary of S 0 / S 1 of the workpiece 7 is set to the point f.
【００１６】ｆ点に被処理物境界Ｓ0 ／Ｓ1 を合わせた
としてもｅ〜ｇの広い範囲に落ちる電子線がある。電子
線照射してはいけない部分にｅ〜ｆの電子線が当たって
いるので好ましくない。反対にｆｇ間では電子線の密度
が低下している。両方とも好ましくない。これを端部ロ
スと呼ぶ事にする。このような電子線分布の減衰幅Ｄは
１５ｍｍ〜２０ｍｍにもなる。ビームマスク１９を下げ
て被処理物に接近させるとｅｆが短くなるが被処理物と
衝突してはいけないからビームマスク１９をあまり接近
させることができない。どうしてこのようなテイルを引
くのか？これが問題である。Even if the object boundary S 0 / S 1 is adjusted to the point f, there is an electron beam which falls in a wide range from e to g. It is not preferable because the electron beams e to f hit portions where the electron beam should not be irradiated. Conversely, the density of the electron beam decreases between fg. Both are not preferred. This will be referred to as end loss. The attenuation width D of such an electron beam distribution is as large as 15 mm to 20 mm. When the beam mask 19 is lowered to approach the object, ef is shortened, but the beam mask 19 cannot be approached too much because it must not collide with the object. Why do you pull such a tail? This is the problem.
【００１７】電子線はフィラメント２からｚ方向に引き
出されるが、窓箔６に当たるのでここで散漫散乱され
る。散乱電子線２２はもはやｚ方向に進行するとは限ら
ず、ｙ方向の運動量をも持つようになり斜めに飛び出
す。イ、ロのようにビームマスク１９の直上で散乱され
たものは右斜めに出た電子線だけが被処理物８にあたる
が、端面２０が垂直に突き出ているからビームが殆ど遮
られる。ｆｇ間での分布の低下はこれによる。ハ、ニか
らの散乱電子線であって端面２０に斜めに衝突したもの
はここで反射されて被処理物８に入射する。衝突しなか
ったものは被処理物にあたらず、ｅｆ間に進む。これが
長いテイルをもたらす。The electron beam is extracted from the filament 2 in the z direction, but hits the window foil 6 and is diffusely scattered here. The scattered electron beam 22 does not always advance in the z direction, but also has a momentum in the y direction and jumps out obliquely. As shown in FIGS. 2A and 2B, only the electron beam emitted obliquely to the right hits the object 8 scattered just above the beam mask 19, but the beam is almost blocked because the end face 20 projects vertically. The lower distribution between fg is due to this. The scattered electron beams from C and D that obliquely collide with the end face 20 are reflected here and enter the object 8 to be processed. Those that did not collide do not hit the object to be processed and proceed between ef. This results in a long tail.
【００１８】本発明のビームマスクは図４のように先端
が斜め傾斜面１０になっている。イ、ロ、ハでの散乱電
子線が傾斜面１０の上を斜めに飛んでｆｇ間に至るから
ｆｇ間の分布を引上げて、ｂｃのように低下分を狭く少
なくする。また端面２０での反射がないので、ｙ＜ｇの
分布を押し上げない。ａｂ間の回り込みは、ビームマス
クを下げて被処理物に接近させると少なくなる。The beam mask of the present invention has a slanted inclined surface 10 at the tip as shown in FIG. Since the scattered electron beams at (a), (b), and (c) fly obliquely on the inclined surface 10 and reach between fg, the distribution between fg is raised, and the decrease like bc is narrowed and reduced. Further, since there is no reflection at the end face 20, the distribution of y <g is not boosted. The wraparound between a and ab is reduced when the beam mask is lowered to approach the workpiece.
【００１９】テーパー上のビームマスクのために本発明
は、ビームマスク直下でのビーム分布の切れを鋭くし、
端部ロスａｂｃを少なくする事ができる。被処理物の境
界Ｓ0 ／Ｓ1 はｙ＝ｂの位置に置く。Ｓ0 には電子線が
ほぼ一様密度で当たる。Ｓ1には殆ど電子線が当たらな
い。According to the present invention, for a beam mask on a taper, the beam distribution just below the beam mask is sharpened,
The end loss abc can be reduced. The boundary S 0 / S 1 of the object is placed at the position of y = b. An electron beam impinges on S 0 at a substantially uniform density. Most electron beam does not hit in the S 1.
【００２０】ビームマスクは電子線が当たって加熱され
るので、水冷する。内部に冷却水流路を設けて常時冷却
水を流す。ビームマスクの厚みは先述のようにこの例で
は２０ｍｍであるが、冷却水による冷却能力によって厚
みを適当に決める。加熱が著しい場合は大量の冷却水を
流す必要があり、冷却水断面積を広くしなければならな
い。ためにビームマスクは厚くならざるを得ない。だか
ら先端形状が問題になる。Since the beam mask is heated by being irradiated with an electron beam, it is cooled with water. A cooling water flow path is provided inside to constantly flow cooling water. Although the thickness of the beam mask is 20 mm in this example as described above, the thickness is appropriately determined depending on the cooling capacity of the cooling water. When heating is remarkable, it is necessary to flow a large amount of cooling water, and the sectional area of the cooling water must be widened. Therefore, the beam mask must be thick. Therefore, the shape of the tip becomes a problem.
【００２１】[0021]
【発明の効果】被処理物進行方向と直角に進退できるビ
ームマスクを設けたので電子線照射の必要な部分の幅の
狭い被処理物にも電子線照射できる。電子線を当てたく
ない部分がある被処理物を処理するのに適する。ビーム
マスクの開口幅を自在に調整できるから電子線を当てる
べき部分が様々の被処理物に対して応用することができ
る。ビームマスクの先端がテーパ状であるからビームの
分布の切れが鋭い。被処理物の当てたくない部分に電子
線が当たらず、当てたい部分には電子線が十分に当たる
ようになる。According to the present invention, since a beam mask capable of moving back and forth at right angles to the traveling direction of the object is provided, the object to be processed can be also irradiated with an electron beam having a narrow width at a portion where electron beam irradiation is required. It is suitable for processing an object to be processed that has a portion that is not desired to be irradiated with an electron beam. Since the opening width of the beam mask can be freely adjusted, a portion to be irradiated with an electron beam can be applied to various objects to be processed. Since the tip of the beam mask is tapered, the beam distribution is sharply cut. The electron beam does not hit the portion of the workpiece that the user does not want to hit, and the electron beam sufficiently hits the portion that the user wants to hit.
【図１】本発明の実施例に係る電子線照射装置の被処理
物の進行方向に平行な面で切った概略縦断面図。FIG. 1 is a schematic vertical cross-sectional view of an electron beam irradiation apparatus according to an embodiment of the present invention, taken along a plane parallel to a traveling direction of a processing object.
【図２】本発明の実施例に係る電子線照射装置の被処理
物の進行方向に直角な面で切った概略縦断面図。FIG. 2 is a schematic vertical cross-sectional view of the electron beam irradiation apparatus according to the embodiment of the present invention, taken along a plane perpendicular to the direction of movement of a processing object.
【図３】ビームマスクの先端を直角の端面としたものの
照射窓近傍の断面図。FIG. 3 is a cross-sectional view of the vicinity of an irradiation window when the tip of the beam mask is a right-angled end face.
【図４】ビームマスクの先端部分を傾斜面とした本発明
の実施例の照射窓近傍の断面図。FIG. 4 is a cross-sectional view of the vicinity of an irradiation window according to an embodiment of the present invention in which a tip portion of a beam mask is an inclined surface.
【図５】被処理物幅よりも広い照射面積を持つフィラメ
ントを有する電子線照射装置の概略構成図。FIG. 5 is a schematic configuration diagram of an electron beam irradiation apparatus having a filament having an irradiation area larger than the width of an object to be processed.
【図６】一部に電子線照射してはいけない部分を持つ被
処理物に対して広い照射面積をもつフィラメントを有す
る電子線照射装置を用いた場合の概略構成図。FIG. 6 is a schematic configuration diagram in a case where an electron beam irradiation apparatus having a filament having a large irradiation area is used for an object to be processed which has a part that cannot be irradiated with an electron beam;
１ 真空チャンバ ２ フィラメント ３ 筐体 ４ 照射窓 ５ 電子線 ６ 窓箔 ７ 搬送コンベヤ ８ 被処理物 ９ ビームマスク １０ 傾斜先端部 １１ チャンバフランジ １２ 窓箔押さえ １３ Ｏリング １４ ウインドウ １９ ビームマスク ２０ 直角端面 ２２ 散乱電子線 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Filament 3 Case 4 Irradiation window 5 Electron beam 6 Window foil 7 Conveyor 8 Workpiece 9 Beam mask 10 Inclined tip part 11 Chamber flange 12 Window foil holding 13 O ring 14 Window 19 Beam mask 20 Right angle end face 22 Scattered electron beam
Claims (1)
トによって縦横方向に広がった断面積を持つ電子線を発
生させ、加速して窓箔を通して大気中に取りだし、大気
中で搬送装置によって一方向に搬送される被処理物に電
子線を照射するようにした電子線照射装置において、窓
箔と被処理物の間に、搬送方向に対して直角に進退自在
で先端に先細りの傾斜面を有するビームマスクを両側或
いは一方に設置し、ビームマスク先端を被処理物の電子
線照射を不要とする部分と、電子線照射を必要とする部
分の境界に合わせることによって、被処理物に対して局
所的に電子線照射するようにした事を特徴とする電子線
照射装置。1. An electron beam having a cross-sectional area spread in the vertical and horizontal directions is generated by a filament spread in the vertical and horizontal directions in a vacuum, accelerated and taken out to the atmosphere through a window foil, and is unidirectionally transported in the air by a transport device in the air. In an electron beam irradiation apparatus configured to irradiate an electron beam to an object to be conveyed, a beam having a tapered inclined surface at a tip between a window foil and the object to be processed, which is movable back and forth at right angles to a conveyance direction. By setting the mask on both sides or one side and aligning the tip of the beam mask with the boundary between the part of the object that does not require electron beam irradiation and the part that requires electron beam irradiation, An electron beam irradiating apparatus characterized in that an electron beam is radiated to the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31120597A JP3787993B2 (en) | 1997-10-27 | 1997-10-27 | Electron beam irradiation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31120597A JP3787993B2 (en) | 1997-10-27 | 1997-10-27 | Electron beam irradiation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11133196A true JPH11133196A (en) | 1999-05-21 |
| JP3787993B2 JP3787993B2 (en) | 2006-06-21 |
Family
ID=18014376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31120597A Expired - Fee Related JP3787993B2 (en) | 1997-10-27 | 1997-10-27 | Electron beam irradiation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3787993B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007143087A2 (en) * | 2006-06-01 | 2007-12-13 | Abbott Cardiovascular Systems Inc. | Radiation sterilization of medical devices |
| US8246904B2 (en) | 2007-06-01 | 2012-08-21 | Abbott Cardiovascular Systems Inc. | Radiation sterilization of medical devices |
| US8613880B2 (en) | 2010-04-21 | 2013-12-24 | Abbott Cardiovascular Systems Inc. | Post electron beam conditioning of polymeric medical devices |
| US8715569B2 (en) | 2010-08-20 | 2014-05-06 | Abbott Cardiovascular Systems Inc. | Post electron beam stabilization of polymeric medical devices |
| US8986608B2 (en) | 2011-05-17 | 2015-03-24 | Abbott Cardiovascular Systems Inc. | Method for radiation sterilization of medical devices |
-
1997
- 1997-10-27 JP JP31120597A patent/JP3787993B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8471229B2 (en) | 2006-06-01 | 2013-06-25 | Abbott Cardiovascular Systems Inc. | System for radiation sterilization of medical devices |
| WO2007143087A3 (en) * | 2006-06-01 | 2008-02-14 | Abbott Cardiovascular Systems | Radiation sterilization of medical devices |
| EP2436401A1 (en) * | 2006-06-01 | 2012-04-04 | Abbott Cardiovascular Systems Inc. | Radiation sterilization of medical devices |
| WO2007143087A2 (en) * | 2006-06-01 | 2007-12-13 | Abbott Cardiovascular Systems Inc. | Radiation sterilization of medical devices |
| US8298483B2 (en) | 2006-06-01 | 2012-10-30 | Abbott Cardiovascular Systems Inc. | Method for radiation sterilization of medical devices using a package having modifier sections |
| US8524151B2 (en) | 2006-06-01 | 2013-09-03 | Abbott Cardiovascular Systems Inc. | Method for radiation sterilization of medical devices |
| US8461561B2 (en) | 2006-06-01 | 2013-06-11 | Abbott Cardiovascular Systems Inc. | System for radiation sterilization of medical devices using a package having modifier sections |
| US8246904B2 (en) | 2007-06-01 | 2012-08-21 | Abbott Cardiovascular Systems Inc. | Radiation sterilization of medical devices |
| US8318088B2 (en) | 2007-06-01 | 2012-11-27 | Abbott Cardiovascular Systems Inc. | Radiation sterilization of medical devices |
| US8696984B2 (en) | 2007-06-01 | 2014-04-15 | Abbott Cardiovascular Systems Inc. | Radiation sterilization of medical devices |
| US8613880B2 (en) | 2010-04-21 | 2013-12-24 | Abbott Cardiovascular Systems Inc. | Post electron beam conditioning of polymeric medical devices |
| US8715569B2 (en) | 2010-08-20 | 2014-05-06 | Abbott Cardiovascular Systems Inc. | Post electron beam stabilization of polymeric medical devices |
| US8986608B2 (en) | 2011-05-17 | 2015-03-24 | Abbott Cardiovascular Systems Inc. | Method for radiation sterilization of medical devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3787993B2 (en) | 2006-06-21 |
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