JPH11121381A - Plasma chemical vapor depositing device - Google Patents
Plasma chemical vapor depositing deviceInfo
- Publication number
- JPH11121381A JPH11121381A JP9275895A JP27589597A JPH11121381A JP H11121381 A JPH11121381 A JP H11121381A JP 9275895 A JP9275895 A JP 9275895A JP 27589597 A JP27589597 A JP 27589597A JP H11121381 A JPH11121381 A JP H11121381A
- Authority
- JP
- Japan
- Prior art keywords
- discharge electrode
- substrate
- frequency discharge
- source gas
- supporting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はプラズマ化学蒸着装
置に関し、特にアモルファスシリコン太陽電池、微結晶
シリコン太陽電池、薄膜トランジスタ、光センサ、半導
体保護膜等各種電子デバイスに使用される非晶質薄膜及
び微結晶薄膜の製造に適用されるプラズマ化学蒸着装置
（以下、ＰＣＶＤ装置と呼ぶ）に関し、詳しくは高周波
放電電極形状に改良を施したものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma-enhanced chemical vapor deposition apparatus, and more particularly to an amorphous thin film used for various electronic devices such as an amorphous silicon solar cell, a microcrystalline silicon solar cell, a thin film transistor, an optical sensor, and a semiconductor protective film. More specifically, the present invention relates to a plasma chemical vapor deposition apparatus (hereinafter, referred to as a PCVD apparatus) applied to the production of a crystalline thin film, which is an improvement in the shape of a high-frequency discharge electrode.
【０００２】[0002]
【従来の技術】従来、ＰＣＶＤ装置としては、図１に示
すものが知られている。図中の付番１は真空容器であ
る。この真空容器１内には、原料ガス供給管２、及び支
持兼加熱部材３が互いに対向して配置されている。前記
支持兼加熱部材３は、裏面側に基板４を支持しながら基
板４を加熱する働きを有している。前記原料ガス供給管
２と支持兼加熱部材３間には、高周波電源５に接続され
た板状の高周波放電電極６が配置されている。前記真空
容器１には真空ポンプ７が接続されている。2. Description of the Related Art Conventionally, a PCVD apparatus shown in FIG. 1 is known. Reference numeral 1 in the figure is a vacuum container. In this vacuum vessel 1, a source gas supply pipe 2 and a supporting and heating member 3 are arranged to face each other. The supporting and heating member 3 has a function of heating the substrate 4 while supporting the substrate 4 on the back surface side. A plate-like high-frequency discharge electrode 6 connected to a high-frequency power supply 5 is arranged between the source gas supply pipe 2 and the supporting and heating member 3. A vacuum pump 7 is connected to the vacuum vessel 1.
【０００３】こうしたＰＣＶＤ装置による非晶質薄膜及
び微結晶薄膜の製造は、次のように行う。まず、支持兼
加熱部材３に、例えばガラス、ステンレス、耐熱性分子
材料などからなる基板４を固定し、所定の温度（例えば
２００℃）まで加熱する。また、真空容器１内を、真空
ポンプ７にて真空排気（例えば１×１０-6Ｔｏｒｒ程度
まで）する。次に、原料ガス（例えばＳｉＨ4 ガス）を
原料ガス供給管２から真空容器１内に導入する。ここ
で、真空容器１内の原料ガスが圧力及び流量が所定の値
（例えば０．１Ｔｏｒｒで８００ｓｃｃｍ）になるよう
に導入流量と排気流量を調整する。The production of an amorphous thin film and a microcrystalline thin film by such a PCVD apparatus is performed as follows. First, a substrate 4 made of, for example, glass, stainless steel, a heat-resistant molecular material, or the like is fixed to the supporting and heating member 3 and heated to a predetermined temperature (for example, 200 ° C.). Further, the inside of the vacuum vessel 1 is evacuated (for example, to about 1 × 10 −6 Torr) by the vacuum pump 7. Next, a source gas (for example, SiH 4 gas) is introduced from the source gas supply pipe 2 into the vacuum vessel 1. Here, the introduction flow rate and the exhaust flow rate are adjusted so that the pressure and the flow rate of the raw material gas in the vacuum vessel 1 become predetermined values (for example, 800 sccm at 0.1 Torr).
【０００４】次に、高周波放電電極６に高周波電源５よ
り高周波電力（例えば６０ＭＨｚで８００Ｗ）を入力
し、高周波放電電極６の周辺に原料ガスのプラズマ８を
発生させる。この結果、原料ガスはプラズマ８により活
性化され、ラジカルな状態（例えばＳｉＨ2 やＳｉＨ
3 、以下ラジカルガスと呼ぶ）になる。基板４表面まで
到達したラジカルは、互いに化学的な結合をしながら基
板４表面に堆積して、薄膜（例えばアモルファスシリコ
ン薄膜、微結晶シリコン薄膜）を形成する。Next, high-frequency power (for example, 800 W at 60 MHz) is input from the high-frequency power supply 5 to the high-frequency discharge electrode 6 to generate a source gas plasma 8 around the high-frequency discharge electrode 6. As a result, the source gas is activated by the plasma 8 and is in a radical state (for example, SiH 2 or SiH 2).
3 , hereinafter referred to as radical gas). The radicals reaching the surface of the substrate 4 are deposited on the surface of the substrate 4 while forming a chemical bond with each other to form a thin film (for example, an amorphous silicon thin film or a microcrystalline silicon thin film).
【０００５】[0005]
【発明が解決しようとする課題】ところで、近年、アモ
ルファスシリコン太陽電池、微結晶シリコン太陽電池、
薄膜トランジスタを用いた液晶表示装置等は、大面積化
の要求が高まっており、製造装置であるＰＣＶＤ装置も
大面積化の方向に進んでいる。In recent years, amorphous silicon solar cells, microcrystalline silicon solar cells,
There is an increasing demand for a large-area liquid crystal display device and the like using a thin film transistor, and a PCVD device, which is a manufacturing device, is also moving toward a larger area.
【０００６】しかし、大面積化すると、薄膜の均一な蒸
着（例えば物性、膜厚）が困難になるという問題があ
る。これは、1)基板面上への供給ガスの流量分布の不均
一性、2)放電電極面上の電圧分布の不均一性が主な原因
と考えられる。However, when the area is increased, there is a problem that it is difficult to uniformly deposit a thin film (for example, physical properties and film thickness). This is considered to be mainly caused by 1) non-uniformity of the flow rate distribution of the supplied gas on the substrate surface, and 2) non-uniformity of the voltage distribution on the discharge electrode surface.
【０００７】図２は、従来のＰＣＶＤ装置における原料
ガス供給管11、高周波放電電極12、基板13の配置を各部
材の形状が分かるようにした展開図を示す。前記原料ガ
ス供給管11は、基板13全面に原料をガスを均一に供給で
きるように、多数のガス吹き出し穴14を設けたガス管15
をはしご状に配置した形状となっており、基板13と平行
に配置されている。また、高周波放電電極12も、基板13
全面にプラズマを発生させ、かつ、原料ガス供給管11か
らの原料ガスの流れを遮ることなく、一様に供給できる
ように、電極棒16をはしご状に配置した形状となってお
り、基板13と平行に配置されている。この電極構成につ
いては、例えば特許（特願平３−５３２９）に報告され
ている。FIG. 2 is an exploded view showing the arrangement of the source gas supply pipe 11, the high-frequency discharge electrode 12, and the substrate 13 in the conventional PCVD apparatus so that the shape of each member can be understood. The source gas supply pipe 11 has a gas pipe 15 provided with a large number of gas blowing holes 14 so that the source gas can be uniformly supplied to the entire surface of the substrate 13.
Are arranged in a ladder shape, and are arranged in parallel with the substrate 13. In addition, the high-frequency discharge electrode 12
The electrode rods 16 are arranged in a ladder shape so as to generate plasma on the entire surface and to supply the source gas uniformly from the source gas supply pipe 11 without interrupting the flow of the source gas. And are arranged in parallel. This electrode configuration is reported, for example, in a patent (Japanese Patent Application No. 3-5329).
【０００８】ところで、薄膜の均一な蒸着のためには、
基板13表面への原料ガスを均一に供給することが不可欠
である。しかしながら、従来の技術では、図３に示すよ
うに高周波放電電極12が原料ガス供給管11から供給され
る原料ガスの流れ17を妨げ、また高周波放電電極12近傍
で原料ガスが大量にプラズマ化するため、基板13表面へ
の均一かつ適正なガス供給が阻害されていた。その結
果、基板13表面に厚さが不均一な薄膜18が蒸着される。By the way, for uniform deposition of a thin film,
It is essential to supply the source gas uniformly to the surface of the substrate 13. However, in the prior art, as shown in FIG. 3, the high-frequency discharge electrode 12 obstructs the flow 17 of the source gas supplied from the source gas supply pipe 11, and the source gas is turned into a large amount of plasma near the high-frequency discharge electrode 12. As a result, uniform and proper gas supply to the surface of the substrate 13 has been hindered. As a result, a thin film 18 having an uneven thickness is deposited on the surface of the substrate 13.
【０００９】本発明はこうした事情を考慮してなされた
もので、高周波放電電極を、パイプ状の電極棒をはしご
状あるいは網目状に配置するとともに、前記電極棒の被
処理物側にガス吹き出し穴を設けた構成とすることによ
り、原料ガス供給管から供給される原料ガスを基板表面
へ均一に流れるようにしえるプラズマ化学蒸着装置を提
供することを目的とする。The present invention has been made in view of the above circumstances, and a high-frequency discharge electrode is arranged in a ladder-like or mesh-like shape with a pipe-like electrode rod, and a gas blowout hole is formed in the electrode rod on the side of the workpiece. It is an object of the present invention to provide a plasma-enhanced chemical vapor deposition apparatus capable of uniformly flowing a source gas supplied from a source gas supply pipe to the surface of a substrate.
【００１０】[0010]
【課題を解決するための手段】本発明は、真空容器と、
この真空容器内に原料ガスを導入し、排出する手段と、
前記真空容器内に配置され、被処理物を支持するととも
に被処理物を加熱する支持兼加熱部材と、前記真空容器
内に配置された高周波放電電極とを具備したプラズマ化
学蒸着装置において、前記高周波放電電極はパイプ状の
電極棒をはしご状あるいは網目状に配置したもので、前
記電極棒の被処理物側にガス吹き出し穴を設けた構成で
あることを特徴とするプラズマ化学蒸着装置である。SUMMARY OF THE INVENTION The present invention comprises a vacuum vessel,
Means for introducing and discharging the source gas into the vacuum vessel,
A plasma chemical vapor deposition apparatus that is disposed in the vacuum vessel, supports and heats the workpiece while supporting the workpiece, and a high-frequency discharge electrode disposed in the vacuum vessel. The discharge electrode is a plasma-enhanced chemical vapor deposition apparatus characterized in that pipe-shaped electrode rods are arranged in a ladder-like or mesh-like manner, and a gas blowout hole is provided on the object side of the electrode rods.
【００１１】本発明において、真空容器内に原料ガスを
導入する手段としては、例えば原料ガス供給管が挙げら
れる。一方、原料ガスの排出は例えば真空ポンプによっ
て排気管を介して行なわれる。In the present invention, the means for introducing the source gas into the vacuum vessel includes, for example, a source gas supply pipe. On the other hand, the discharge of the raw material gas is performed by a vacuum pump through an exhaust pipe.
【００１２】本発明において、高周波放電電極の形状
は、例えば複数のパイプ状の電極棒を平行にはしご状に
並べ、被処理物側にガス吹き出し穴を設けたもの、ある
いは複数のパイプ状の電極棒を平行に並べた電極群を２
つ互いに直交させて配置したもので、物理的かつ電気的
に結合して電極主面を網目状にしかつ被処理物側にガス
吹き出し穴を設けたものたものが挙げられる。前記高周
波放電電極はガスを通す機能も有する。In the present invention, the high-frequency discharge electrode may be formed, for example, by arranging a plurality of pipe-shaped electrode rods in parallel in a ladder shape and providing a gas blowing hole on the side of the object to be processed, or a plurality of pipe-shaped electrodes. Two electrode groups with rods arranged in parallel
The electrodes are arranged so as to be orthogonal to each other, and are physically and electrically coupled to form a mesh-like main surface of the electrode and provided with a gas blowing hole on the processing object side. The high-frequency discharge electrode also has a function of passing gas.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施例を図面を参
照して説明する。 （実施例１）図４、図５を参照する。但し、図４は本発
明に係るプラズマ化学蒸着装置（ＰＣＶＤ装置）の全体
図、図５は図４の装置の一構成である高周波放電電極の
概略的な形状を示す斜視図である。Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) Reference is made to FIGS. 4 is an overall view of a plasma chemical vapor deposition apparatus (PCVD apparatus) according to the present invention, and FIG. 5 is a perspective view showing a schematic shape of a high-frequency discharge electrode which is one configuration of the apparatus of FIG.
【００１４】図中の付番21は真空容器である。この真空
容器21内には、原料ガス供給管22、及び支持兼加熱部材
23が互いに対向して配置されている。前記支持兼加熱部
材23は、裏面側に被処理物としての基板24を支持しなが
ら基板24を加熱する働きを有している。前記原料ガス供
給管22と支持兼加熱部材23間には、高周波電源25に接続
された高周波放電電極26が配置されている。ここで、高
周波放電電極26は、図５に示すように、パイプ状の複数
の電極棒31をはしご状に配置し、かつ基板24側にガス吹
き出し穴32を設けた構成となっている。前記真空容器21
には真空ポンプ27が接続されている。Reference numeral 21 in the figure denotes a vacuum container. A source gas supply pipe 22 and a supporting and heating member
23 are arranged opposite to each other. The supporting and heating member 23 has a function of heating the substrate 24 while supporting the substrate 24 as an object to be processed on the back surface side. A high-frequency discharge electrode 26 connected to a high-frequency power supply 25 is disposed between the source gas supply pipe 22 and the supporting and heating member 23. Here, as shown in FIG. 5, the high-frequency discharge electrode 26 has a configuration in which a plurality of pipe-shaped electrode rods 31 are arranged in a ladder shape, and a gas blowing hole 32 is provided on the substrate 24 side. The vacuum vessel 21
Is connected to a vacuum pump 27.
【００１５】こうしたＰＣＶＤ装置による非晶質薄膜及
び微結晶薄膜の製造は次のように行う。まず、支持兼加
熱部材23に例えばガラス、ステンレス、耐熱性分子材料
等からなる基板24を固定し、所定の温度（例えば２００
℃）まで加熱する。また、真空容器１内を、真空ポンプ
27にて真空排気（例えば１×１０-6Ｔｏｒｒ程度）す
る。次に、原料ガス（例えばＳｉＨ4 ガス）を原料ガス
供給管22から真空容器21内に導入する。ここで、真空容
器21内の原料ガスが圧力及び流量が所定の値（例えば
０．１Ｔｏｒｒで８００ｓｃｃｍ）になるように導入流
量と排気流量を調整する。The production of an amorphous thin film and a microcrystalline thin film by such a PCVD apparatus is performed as follows. First, a substrate 24 made of, for example, glass, stainless steel, a heat-resistant molecular material, or the like is fixed to the supporting and heating member 23, and a predetermined temperature (for example, 200
(° C). In addition, a vacuum pump is
Evacuation (for example, about 1 × 10 −6 Torr) is performed at 27. Next, a source gas (for example, SiH 4 gas) is introduced from the source gas supply pipe 22 into the vacuum vessel 21. Here, the introduction flow rate and the exhaust flow rate are adjusted so that the pressure and the flow rate of the raw material gas in the vacuum vessel 21 become predetermined values (for example, 800 sccm at 0.1 Torr).
【００１６】次に、高周波放電電極26に高周波電源25よ
り高周波電力（例えば６０ＭＨｚで８００Ｗ）を入力
し、高周波放電電極26の周辺に原料ガスのプラズマ28を
発生させる。この結果、原料ガスはプラズマ28により活
性化され、ラジカルな状態（例えばＳｉＨ2 やＳｉＨ
3 、以下ラジカルガスと呼ぶ）になる。基板24表面まで
到達したラジカルは、互いに化学的な結合をしながら基
板24表面に堆積して、アモルファスシリコン薄膜、微結
晶シリコン薄膜等を形成する。Next, high-frequency power (for example, 800 W at 60 MHz) is input from the high-frequency power supply 25 to the high-frequency discharge electrode 26 to generate a source gas plasma 28 around the high-frequency discharge electrode 26. As a result, the source gas is activated by the plasma 28 and is in a radical state (for example, SiH 2 or SiH 2).
3 , hereinafter referred to as radical gas). The radicals that reach the surface of the substrate 24 are deposited on the surface of the substrate 24 while forming chemical bonds with each other to form an amorphous silicon thin film, a microcrystalline silicon thin film, and the like.
【００１７】上記実施例１に係るＰＣＶＤ装置によれ
ば、高周波放電電極26が複数のパイプ状の電極棒31をは
しご状に配置し、かつ基板24側にガス吹き出し穴32を設
けた構成となっているため、図６に示すように高周波放
電電極26と基板24の間にガス流れ33を阻害するものある
いは原料ガスが大量にプラズマ化されることがないた
め、原料ガス供給の不均一性が改善できる。従って、基
板24に均一な薄膜34を蒸着できる。According to the PCVD apparatus of the first embodiment, the high-frequency discharge electrode 26 has a configuration in which a plurality of pipe-shaped electrode rods 31 are arranged in a ladder shape, and a gas blowing hole 32 is provided on the substrate 24 side. Therefore, as shown in FIG. 6, the gas flow 33 between the high-frequency discharge electrode 26 and the substrate 24 is not hindered, or the source gas is not turned into a large amount of plasma. Can be improved. Therefore, a uniform thin film 34 can be deposited on the substrate 24.
【００１８】（実施例２）本実施例２に係る高周波放電
電極41は、図７に示すように、上部側（基板側）にガス
吹き出し穴42を有したこうパイプ状の電極棒43はしご状
にした電極群を２つ互いに直交させて電気的かつ物理的
に一体化させ、主面が網目状になるように配置した構成
となっている。(Embodiment 2) As shown in FIG. 7, a high-frequency discharge electrode 41 according to Embodiment 2 has a ladder-like electrode rod 43 having a gas blowing hole 42 on the upper side (substrate side). The two electrode groups are electrically and physically integrated so as to be orthogonal to each other and arranged so that the main surface is in a mesh shape.
【００１９】実施例に係るＰＣＶＤ装置によれば、実施
例１と同様、高周波放電電極26と基板24の間にガス流れ
を阻害するものあるいは原料ガスが大量にプラズマ化さ
れることがないため、原料ガス供給の不均一性が改善で
きる。According to the PCVD apparatus according to the embodiment, similarly to the first embodiment, since the gas flow between the high-frequency discharge electrode 26 and the substrate 24 is not obstructed or the source gas is not turned into a large amount of plasma, Non-uniformity of source gas supply can be improved.
【００２０】[0020]
【発明の効果】以上詳述したように本発明によれば、高
周波放電電極を、パイプ状の電極棒をはしご状あるいは
網目状に配置するとともに、前記電極棒の被処理物側に
ガス吹き出し穴を設けた構成とすることにより、原料ガ
ス供給管から供給される原料ガスを基板表面へ均一に流
れるようにしえるプラズマ化学蒸着装置を提供できる。As described above in detail, according to the present invention, a high-frequency discharge electrode is arranged in a ladder-like or mesh-like shape with a pipe-like electrode rod, and a gas blowout hole is formed in the electrode rod on the side of the workpiece. Is provided, it is possible to provide a plasma-enhanced chemical vapor deposition apparatus capable of uniformly flowing the source gas supplied from the source gas supply pipe to the substrate surface.
【図１】従来のＰＣＶＤ装置の全体図。FIG. 1 is an overall view of a conventional PCVD apparatus.
【図２】従来のＰＣＶＤ装置における原料ガス供給管、
高周波放電電極及び基板の配置状態を示す展開図。FIG. 2 shows a source gas supply pipe in a conventional PCVD apparatus;
FIG. 3 is a development view showing an arrangement state of a high-frequency discharge electrode and a substrate.
【図３】従来のＰＣＶＤ装置による原料ガスの流れと蒸
着された膜厚の不均一性を説明するための図。FIG. 3 is a view for explaining a flow of a source gas and non-uniformity of a deposited film thickness by a conventional PCVD apparatus.
【図４】本発明の実施例１に係るＰＣＶＤ装置の全体
図。FIG. 4 is an overall view of a PCVD apparatus according to Embodiment 1 of the present invention.
【図５】図４の装置に使用される高周波放電電極の説明
図。FIG. 5 is an explanatory view of a high-frequency discharge electrode used in the apparatus of FIG.
【図６】図４のＰＣＶＤ装置による原料ガスの流れと蒸
着された膜厚の均一性を説明するための図。FIG. 6 is a view for explaining the flow of source gas and the uniformity of a deposited film thickness by the PCVD apparatus of FIG. 4;
【図７】本発明の実施例２に係るＰＣＶＤ装置に使用さ
れる高周波放電電極の説明図。FIG. 7 is an explanatory diagram of a high-frequency discharge electrode used in the PCVD apparatus according to the second embodiment of the present invention.
21…真空容器、 22…原料ガス供給管、 23…支持兼加熱部材、 24…基板（被処理物）、 25…高周波電源、 26、41…高周波放電電極、 27…真空ポンプ、 31、43…パイプ状の電極棒、 32、42…ガス吹き出し穴。 21 ... Vacuum container, 22 ... Source gas supply pipe, 23 ... Supporting and heating member, 24 ... Substrate (workpiece), 25 ... High frequency power supply, 26,41 ... High frequency discharge electrode, 27 ... Vacuum pump, 31,43 ... Pipe-shaped electrode rods, 32, 42 ... gas blowing holes.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山越 英男 神奈川県横浜市金沢区幸浦一丁目８番地１ 三菱重工業株式会社基盤技術研究所内 (72)発明者 縄田 芳一 長崎県長崎市飽の浦町１番１号 三菱重工 業株式会社長崎造船所内 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Hideo Yamakoshi 1-8-1 Koura, Kanazawa-ku, Yokohama-shi, Kanagawa Prefecture Mitsubishi Heavy Industries, Ltd. Fundamental Technology Research Laboratories No. 1 Inside Nagasaki Shipyard, Mitsubishi Heavy Industries, Ltd.
Claims (1)
を導入し、排出する手段と、前記真空容器内に配置さ
れ、被処理物を支持するとともに被処理物を加熱する支
持兼加熱部材と、前記真空容器内に配置された高周波放
電電極とを具備したプラズマ化学蒸着装置において、 前記高周波放電電極はパイプ状の電極棒をはしご状ある
いは網目状に配置したもので、前記電極棒の被処理物側
にガス吹き出し穴を設けた構成であることを特徴とする
プラズマ化学蒸着装置。1. A vacuum vessel, means for introducing and discharging a raw material gas into the vacuum vessel, and a supporting and heating member arranged in the vacuum vessel for supporting the workpiece and heating the workpiece. And a high-frequency discharge electrode disposed in the vacuum vessel, wherein the high-frequency discharge electrode is a pipe-shaped electrode rod arranged in a ladder or mesh shape, and covered with the electrode rod. A plasma-enhanced chemical vapor deposition apparatus having a configuration in which a gas blowing hole is provided on a processing object side.
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| JP27589597A JP3716086B2 (en) | 1997-10-08 | 1997-10-08 | Plasma chemical vapor deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27589597A JP3716086B2 (en) | 1997-10-08 | 1997-10-08 | Plasma chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11121381A true JPH11121381A (en) | 1999-04-30 |
| JP3716086B2 JP3716086B2 (en) | 2005-11-16 |
Family
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|---|---|---|---|
| JP27589597A Expired - Fee Related JP3716086B2 (en) | 1997-10-08 | 1997-10-08 | Plasma chemical vapor deposition equipment |
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| US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7754013B2 (en) | 2002-12-05 | 2010-07-13 | Asm International N.V. | Apparatus and method for atomic layer deposition on substrates |
| US7537662B2 (en) | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
| US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
| USRE48871E1 (en) | 2003-04-29 | 2022-01-04 | Asm Ip Holding B.V. | Method and apparatus for depositing thin films on a surface |
| KR101251882B1 (en) * | 2011-06-21 | 2013-04-08 | 주식회사 테스 | Electrode for Plasma Generation and Method of Manufacturing the Same |
| KR101308881B1 (en) * | 2011-11-16 | 2013-09-23 | 주식회사 테스 | Plasma processing apparatus |
| KR101413981B1 (en) * | 2012-06-21 | 2014-07-04 | 주식회사 테스 | Plasma generator and thin film deposition apparatus comprising the same |
| KR101413979B1 (en) * | 2012-06-21 | 2014-07-04 | 주식회사 테스 | Plasma generator and thin film deposition apparatus comprising the same |
| WO2018048125A1 (en) * | 2016-09-06 | 2018-03-15 | 주성엔지니어링(주) | Gas spraying apparatus for substrate processing apparatus and substrate processing apparatus |
| US10923326B2 (en) | 2016-09-06 | 2021-02-16 | Jusung Engineering Co., Ltd. | Gas spraying apparatus for substrate processing apparatus and substrate processing apparatus |
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|---|---|
| JP3716086B2 (en) | 2005-11-16 |
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