JPH11111502A - Ceramic board for electronic component - Google Patents

Ceramic board for electronic component

Info

Publication number
JPH11111502A
JPH11111502A JP9267582A JP26758297A JPH11111502A JP H11111502 A JPH11111502 A JP H11111502A JP 9267582 A JP9267582 A JP 9267582A JP 26758297 A JP26758297 A JP 26758297A JP H11111502 A JPH11111502 A JP H11111502A
Authority
JP
Japan
Prior art keywords
ceramic substrate
groove
primary
thickness
division groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9267582A
Other languages
Japanese (ja)
Other versions
JP3574730B2 (en
Inventor
Kenji Tanda
健二 反田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP26758297A priority Critical patent/JP3574730B2/en
Publication of JPH11111502A publication Critical patent/JPH11111502A/en
Application granted granted Critical
Publication of JP3574730B2 publication Critical patent/JP3574730B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0097Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards

Landscapes

  • Non-Adjustable Resistors (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)

Abstract

PROBLEM TO BE SOLVED: To simplify the manufacturing process, by causing a ceramic board used as a preform for various electronic components to have a thickness within a predetermined dimensional range, and providing a split groove having a depth of a specified proportion to the thickness. SOLUTION: A ceramic board 10 has a primary split groove 11 and a secondary split groove 12 orthogonal to each other on the surface thereof. After a resistor, a conductor and the like are printed on the surface of the ceramic board 10, the ceramic board 10 is split along the primary split groove 11 and the secondary split groove 12, thus manufacturing a chip resistor 20. The ceramic board 10 has a small thickness T of 0.1 to 0.3 mm, and the depth D of the primary (secondary) split groove 11 (12) is made 30 to 70% of the thickness T. Next, after a conductor 21 and a resistor 22 are printed on one surface of the ceramic board 10, trimming is carried out to adjust the resistance. Next, after a protective layer 23 such as an overcoat glass is printed, the ceramic board is split along the primary split groove 11 and the secondary split groove 12. Thus, the chip resistor 20 can be obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、チップ抵抗器等の
チップ状の電子部品を製造する際に、母材として用いら
れるセラミック基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic substrate used as a base material when manufacturing chip-shaped electronic components such as chip resistors.

【0002】[0002]

【従来の技術】従来より、チップ抵抗器は分割溝を有す
るセラミック基板上に抵抗体等を印刷し、分割すること
により製造している。
2. Description of the Related Art Conventionally, a chip resistor is manufactured by printing a resistor or the like on a ceramic substrate having a dividing groove and dividing it.

【0003】まず、セラミックス原料のスラリーより成
形したグリーンシートに縦横の分割溝を形成し、外辺打
ち抜き後、焼成して、図5(a)に示すセラミック基板
10を得る。そして、このセラミック基板10の一方又
は両方の面に導体と抵抗体を印刷し焼き付けた後、トリ
ミングを行って抵抗調整する。次に、オーバーコートガ
ラス等の保護層を印刷し焼き付けた後、一方方向の1次
分割溝11より分割を行って、図5(b)に示す短冊状
とする。その後、短冊状をしたセラミック基板10の両
端を保持して、分割した破面13に端面電極を成す導体
を印刷し焼き付けた後、更に他方向の2次分割溝12で
分割し、図5(c)に示すチップ抵抗器20を得てい
た。
First, vertical and horizontal dividing grooves are formed in a green sheet formed from a slurry of a ceramic raw material, and punching is performed on an outer side, followed by firing to obtain a ceramic substrate 10 shown in FIG. After printing and printing a conductor and a resistor on one or both surfaces of the ceramic substrate 10, trimming is performed to adjust the resistance. Next, after a protective layer such as overcoat glass is printed and baked, the protective layer is divided from the primary dividing grooves 11 in one direction to obtain a strip shape shown in FIG. 5B. Thereafter, while holding both ends of the strip-shaped ceramic substrate 10 and printing and printing a conductor forming an end surface electrode on the divided fractured surface 13, the substrate is further divided by the secondary division groove 12 in the other direction. The chip resistor 20 shown in c) was obtained.

【0004】即ち、このチップ抵抗器20は、セラミッ
ク基板10の一方の面に、抵抗体22とこれに接続する
導体21及び保護層23を有し、また端面に端面電極2
4を有している。そして、回路基板30の所定位置に備
えた導体31上にハンダ32を盛り、マウンターを用い
て上記のチップ抵抗器20を搭載し、各端面電極24を
ハンダ32と接続させて固定するようになっている。
That is, this chip resistor 20 has a resistor 22, a conductor 21 connected thereto and a protective layer 23 on one surface of a ceramic substrate 10, and an end face electrode 2 on an end face.
Four. Then, the solder 32 is put on the conductor 31 provided at a predetermined position of the circuit board 30, the above-described chip resistor 20 is mounted using a mounter, and each end face electrode 24 is connected and fixed to the solder 32. ing.

【0005】なお、上記セラミック基板10は、アルミ
ナを主成分とするセラミックスからなり、その厚みは最
も薄いもので0.34〜0.48mm程度のものが使用
されている。
The ceramic substrate 10 is made of a ceramic containing alumina as a main component, and has the thinnest thickness of about 0.34 to 0.48 mm.

【0006】[0006]

【発明が解決しようとする課題】ところで、近年、電子
機器の小型化に伴って、各種電子部品も小型化が進んで
いる。例えば、チップ抵抗器20の寸法は、3.2×
1.6mmから2×1.25mm、1.6×0.8m
m、1×0.5mm、さらには0.6×0.3mmと非
常に小さなものが求められており、その母材となるセラ
ミック基板10の要求特性も厳しいものとなっており、
さまざまな問題が生じている。
In recent years, various electronic components have been miniaturized with the miniaturization of electronic devices. For example, the size of the chip resistor 20 is 3.2 ×
1.6 x 2 x 1.25 mm, 1.6 x 0.8 m
m, 1 × 0.5 mm, and further, very small ones of 0.6 × 0.3 mm are required, and the required characteristics of the ceramic substrate 10 as a base material thereof are also severe.
Various problems have arisen.

【0007】例えば、セラミック基板10を1次分割溝
11に沿って短冊状に分割する際に、2次分割溝12ま
で同時に割れてしまうという不都合があった。
For example, when the ceramic substrate 10 is divided into strips along the primary dividing grooves 11, there is a disadvantage that the ceramic substrate 10 is simultaneously broken up to the secondary dividing grooves 12.

【0008】即ち、図5(c)に示すように、チップ抵
抗器20には端面電極24が必要であり、この端面電極
24を効率的に印刷するために、図5(b)に示すよう
にセラミック基板10をまず1次分割溝11のみで分割
して短冊状にし、その破面13に導体を印刷する必要が
ある。この時、2次分割溝12が同時に割れてしまう
と、導体を印刷する装置が頻繁に停止する等の問題が発
生する。
That is, as shown in FIG. 5C, the chip resistor 20 requires an end face electrode 24. In order to print the end face electrode 24 efficiently, as shown in FIG. First, it is necessary to divide the ceramic substrate 10 into strips only by the primary division grooves 11, and to print a conductor on the broken surface 13. At this time, if the secondary division grooves 12 are broken at the same time, problems such as frequently stopping the apparatus for printing conductors occur.

【0009】なお、この問題を解決するために、1次分
割溝11と2次分割溝12の深さを異ならせることも行
われている。しかし、分割溝の先端に存在するマイクロ
クラックのためにその深さが安定せず、またセラミック
基板10に不均一な反りやうねり、あるいは厚みのばら
つきが生じると、ローラー等で分割する際に不均一な力
が基板に加わるために、やはり1次分割溝11で分割す
る際に2次分割溝12も割れる事があった。
Incidentally, in order to solve this problem, the depth of the primary division groove 11 and the secondary division groove 12 are also made different. However, if the depth is not stable due to the microcracks existing at the tip of the dividing groove, and if the ceramic substrate 10 has uneven warpage, undulation, or uneven thickness, it is difficult to divide the ceramic substrate 10 with a roller or the like. Since a uniform force is applied to the substrate, the secondary division groove 12 may also be broken when the division is performed by the primary division groove 11.

【0010】さらに、近年、上記チップ抵抗器20をマ
ウンターで回路基板30上に搭載する速度を極限まで高
めているために、搭載時に大きな圧力がチップ抵抗器2
0に加わり、セラミック基板10に割れやクラックが発
生するという問題があり、その結果回路の信頼性を低下
させる原因となっていた。
Further, in recent years, since the mounting speed of the chip resistor 20 on the circuit board 30 by the mounter has been increased to the utmost, a large pressure is applied during mounting.
In addition to the above, there is a problem that cracks and cracks occur in the ceramic substrate 10, and as a result, the reliability of the circuit is reduced.

【0011】また、上記分割溝を形成する場合は、一定
間隔で並べた刃をセラミックグリーンシートに押し当て
て形成していたが、チップ抵抗器20の小型化に伴い、
刃の間隔が小さくなると、押し当てた刃にグリーンシー
トが張りついてしまうことがあった。このような場合
は、空気を噴出して剥がすことが行われているが、特に
グリーンシートが薄くなると、均一に剥がすことが困難
になり、金型の二重押しや、最悪の場合金型破損等の問
題が生じていた。
In the case of forming the above-mentioned divided grooves, the blades arranged at regular intervals are pressed against the ceramic green sheet.
When the distance between the blades was small, the green sheet sometimes stuck to the pressed blade. In such a case, air is blown off and peeled off.However, especially when the green sheet is thin, it is difficult to peel it off evenly, and double pressing of the mold or breakage of the mold in the worst case And other problems.

【0012】さらに、チップ抵抗器等が小さくなると、
上記セラミック基板10上に導体21を印刷する際に、
分割溝を伝わって他の導体21と繋がってしまい、トリ
ミング工程で正しく抵抗値を測定できなくなるという不
都合もあった。
Further, when the chip resistor and the like become smaller,
When printing the conductor 21 on the ceramic substrate 10,
There is also an inconvenience that the resistance value cannot be measured correctly in the trimming process because the conductor is connected to another conductor 21 along the dividing groove.

【0013】[0013]

【課題を解決するための手段】そこで本発明は、各種電
子部品の母材として用いられるセラミック基板におい
て、厚みが0.1〜0.3mmであり、この厚みに対し
て30〜70%の深さの分割溝を有することを特徴とす
る。
SUMMARY OF THE INVENTION Accordingly, the present invention provides a ceramic substrate used as a base material of various electronic parts, which has a thickness of 0.1 to 0.3 mm and a depth of 30 to 70% of this thickness. It is characterized in that it has a dividing groove.

【0014】即ち、本発明では、セラミック基板の厚み
を0.1〜0.3mmと非常に薄くすることによって、
一方側の面に備えた導体のみで回路基板上のハンダと接
続することができ、端面電極の必要をなくせることを見
出した。そのため、端面電極の印刷工程が必要ないこと
から、製造工程を簡略化できるとともに、1次分割溝の
分割時に2次分割溝まで割れてしまっても大きな問題と
なることはない。さらに、このように薄くすることによ
って、より小型の電子部品に好適に対応することができ
る。
That is, in the present invention, by making the thickness of the ceramic substrate as very thin as 0.1 to 0.3 mm,
It has been found that only the conductor provided on one side can be connected to the solder on the circuit board, eliminating the need for an end face electrode. For this reason, since the step of printing the end face electrodes is not required, the manufacturing process can be simplified, and there is no significant problem even if the primary divisional grooves are broken down to the secondary divisional grooves. Furthermore, by making such a thinner, it is possible to suitably cope with smaller electronic components.

【0015】また、本発明は、各種電子部品の母材とし
て用いられるセラミック基板において、縦横の分割溝を
有し、この分割溝に囲まれる最小領域の短辺に対する基
板の厚みの比を0.25〜1.0の範囲にしたことを特
徴とする。
Further, according to the present invention, a ceramic substrate used as a base material of various electronic components has vertical and horizontal dividing grooves, and a ratio of a thickness of the substrate to a short side of a minimum region surrounded by the dividing grooves is set to 0.1. The range is from 25 to 1.0.

【0016】即ち、本発明は、非常に小型の電子部品で
あっても、その短辺と厚みの比を上記範囲内とすること
によって、高速で搭載する際に割れやクラックが生じる
ことを防止できるようにしたものである。
That is, the present invention prevents the generation of cracks and cracks during high-speed mounting by setting the ratio of the short side to the thickness of the electronic component within the above range, even for a very small electronic component. It is made possible.

【0017】さらに本発明は、各種電子部品の母材とし
て用いられるセラミック基板であって、縦横の1次分割
溝と2次分割溝を有し、1次分割溝の深さと角度をそれ
ぞれ2次分割溝よりも大きくしたことを特徴とする。
Further, the present invention relates to a ceramic substrate used as a base material of various electronic components, comprising a vertical and horizontal primary division groove and a secondary division groove, wherein the depth and angle of the primary division groove are each set to a secondary value. It is characterized in that it is larger than the dividing groove.

【0018】また、本発明は、上記1次分割溝の角度を
30〜60°、2次分割溝の角度を25〜40°の範囲
としたことを特徴とする。
Further, the present invention is characterized in that the angle of the primary dividing groove is in the range of 30 to 60 ° and the angle of the secondary dividing groove is in the range of 25 to 40 °.

【0019】即ち、より深く形成する1次分割溝の角度
を大きくすることによって、グリーンシートに刃を押し
当てて加工する際に、刃へのグリーンシートの張りつき
を防止できるようにしたものである。
That is, by increasing the angle of the primary division groove formed deeper, it is possible to prevent the green sheet from sticking to the blade when the blade is pressed against the green sheet for processing. .

【0020】さらに本発明は、上記1次分割溝の幅を、
2次分割溝との交点で狭くなるようにしたことによっ
て、印刷した導体が分割溝を伝わって他の導体と繋がる
ことを防止するようにしたものである。
Further, according to the present invention, the width of the primary dividing groove is
By narrowing at the intersection with the secondary division groove, the printed conductor is prevented from traveling along the division groove and being connected to another conductor.

【0021】また本発明は、上記セラミック基板が、9
3〜97重量%のAl2 3 を主成分とし、添加成分の
重量比がSiO2 52〜68%、CaO2〜10.5
%、MgO25.5〜42%であることを特徴とする。
さらに本発明は、上記セラミック基板が、平均粒径12
μm以下のアルミナセラミックスからなることを特徴と
する。
Further, according to the present invention, the ceramic substrate is preferably made of 9
The main component is 3 to 97% by weight of Al 2 O 3 , and the weight ratio of the additional components is 52 to 68% of SiO 2 and 2 to 10.5% of CaO.
%, And MgO 25.5 to 42%.
Further, the present invention provides the above-mentioned ceramic substrate, wherein the average particle diameter is 12
It is characterized by being made of alumina ceramics of μm or less.

【0022】即ち、上記組成や平均粒径の範囲内とする
ことによって、強度の高いセラミック基板を得られるた
め、上述したように厚みを非常に薄くしても破損等を防
止することができる。また、電子部品を高速で搭載する
際にも割れやクラックの発生を防止できる。
That is, by setting the composition and the average particle size within the above ranges, a ceramic substrate having a high strength can be obtained, so that breakage or the like can be prevented even if the thickness is extremely thin as described above. In addition, when electronic components are mounted at a high speed, generation of cracks and cracks can be prevented.

【0023】[0023]

【発明の実施の形態】以下、本発明の実施形態を図に基
づいて詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to the drawings.

【0024】図1に示すセラミック基板10は、表面に
互いに直交する1次分割溝11と2次分割溝12を有し
ており、このセラミック基板10の表面に抵抗体や導体
等を印刷した後、1次分割溝11と2次分割溝12で分
割することによって、図2に示すようなチップ抵抗器2
0を製造することができる。
The ceramic substrate 10 shown in FIG. 1 has a primary divisional groove 11 and a secondary divisional groove 12 which are orthogonal to each other on the surface, and after a resistor, a conductor or the like is printed on the surface of the ceramic substrate 10. The chip resistor 2 shown in FIG. 2 is divided by the primary division groove 11 and the secondary division groove 12.
0 can be produced.

【0025】また、このセラミック基板10は、その厚
みTを0.1〜0.3mmと非常に薄くしてあり、その
1次(2次)分割溝11(12)の深さDを厚みTの3
0〜70%としてある。そのため、詳細を後述するよう
に、チップ抵抗器を構成する際に端面電極を省略するこ
とができる。
The ceramic substrate 10 has a very thin thickness T of 0.1 to 0.3 mm, and the depth D of the primary (secondary) dividing groove 11 (12) is 3
0% to 70%. Therefore, as will be described later in detail, it is possible to omit the end face electrode when configuring the chip resistor.

【0026】なお、ここで、厚みTを上記範囲としたの
は、0.1mm未満では、薄すぎるために強度が非常に
小さくなり、取扱時等に破損が生じやすくなるためであ
り、0.3mmを超えると端面電極を省略することがで
きなくなるためである。また、厚みTに対する分割溝の
深さDの比を上記範囲としたのは、30%未満では分割
性が低下し、70%を超えると搬送工程等で誤って分割
されてしまう恐れが生じるためである。
Here, the reason why the thickness T is set in the above range is that if the thickness T is less than 0.1 mm, the strength is extremely small because it is too thin, and it is easy to be damaged during handling. If it exceeds 3 mm, it is impossible to omit the end face electrode. The reason why the ratio of the depth D of the dividing groove to the thickness T is set in the above range is that if the ratio is less than 30%, the dividing property is reduced, and if the ratio exceeds 70%, there is a possibility that the division may be erroneously performed in a transport process or the like. It is.

【0027】さらに、このセラミック基板10は、縦横
の1次分割溝11と2次分割溝12に囲まれる最小領域
の短辺の長さXに対する基板の厚みTの比T/Xを0.
25〜1.0の範囲にしてある。そのため、分割後のセ
ラミック基板10の強度を高め、高速でのマウント時に
破損等を生じることを防止できる。
Further, in the ceramic substrate 10, the ratio T / X of the thickness T of the substrate to the length X of the short side of the minimum region surrounded by the vertical and horizontal primary division grooves 11 and the secondary division grooves 12 is set to 0.1.
The range is from 25 to 1.0. Therefore, the strength of the divided ceramic substrate 10 can be increased, and breakage or the like can be prevented during mounting at high speed.

【0028】ここで、比T/Xを上記範囲としたのは、
0.25未満では厚みが薄すぎるために高速マウント時
に破損しやすく、一方1.0を超えると厚すぎて分割性
が低下するためである。
Here, the ratio T / X is set in the above range because:
If it is less than 0.25, the thickness is too thin and it is easily broken at the time of high-speed mounting. On the other hand, if it exceeds 1.0, the thickness is too thick and the dividing property is reduced.

【0029】なお、このセラミック基板10の製造方法
は、所定のセラミックス原料のスラリーより成形したグ
リーンシートに刃を押し当てて縦横の1次分割溝11、
2次分割溝12を形成し、外辺を打ち抜いた後、焼成す
ることによって得ることができる。
The method of manufacturing the ceramic substrate 10 is such that a blade is pressed against a green sheet formed from a slurry of a predetermined ceramic raw material so as to form vertical and horizontal primary division grooves 11,
It can be obtained by forming the secondary division groove 12, punching the outer edge, and firing.

【0030】次に、このセラミック基板10を用いて図
2に示すようなチップ抵抗器20を製造する場合は、セ
ラミック基板10の一方の面に導体21と抵抗体22を
印刷し焼き付けた後、トリミングを行って抵抗調整す
る。次に、オーバーコートガラス等の保護層23を印刷
し焼き付けた後、1次分割溝11及び2次分割溝12よ
り分割を行って、図2に示すようなチップ抵抗器20を
得ることができる。
Next, when a chip resistor 20 as shown in FIG. 2 is manufactured using the ceramic substrate 10, a conductor 21 and a resistor 22 are printed and baked on one surface of the ceramic substrate 10, and then printed. Adjust the resistance by trimming. Next, after a protective layer 23 such as overcoat glass is printed and baked, the chip is divided from the primary division groove 11 and the secondary division groove 12 to obtain the chip resistor 20 as shown in FIG. .

【0031】この時、1次分割溝11の深さDは基板厚
みTの30〜70%まで形成していることから、上記導
体21の印刷時に、導体21はこの1次分割溝11の中
まで入り込み、更に焼き付けにより分割溝先端に発生し
ているマイクロクラックまで流れ込むため、最終的なチ
ップ抵抗器20の端面上部まで塗布されることになる。
しかも、セラミック基板10の厚みTが0.1〜0.3
mmと非常に薄いため、チップ抵抗器20の端面にはか
なりの部分まで導体21が存在することになり、従来の
ような端面電極を省略することができる。
At this time, since the depth D of the primary division groove 11 is formed to be 30 to 70% of the thickness T of the substrate, the conductor 21 is inserted into the primary division groove 11 when the conductor 21 is printed. , And further flows to the microcracks generated at the tip of the dividing groove by baking, so that the final chip resistor 20 is applied to the upper end face.
Moreover, the thickness T of the ceramic substrate 10 is 0.1 to 0.3.
mm, the conductor 21 exists to a considerable extent at the end face of the chip resistor 20, and the end face electrode as in the conventional case can be omitted.

【0032】即ち、回路基板30上の所定位置に備えた
導体31上にハンダ32を盛り、この上に上記チップ抵
抗器20を搭載し、熱をかけて接着する。この時、セラ
ミック基板10が非常に薄く、また端面上部まで導体2
1が塗布されていることから、端面電極なしでもこの導
体21とハンダ32を接続することができるのである。
That is, the solder 32 is put on the conductor 31 provided at a predetermined position on the circuit board 30, and the chip resistor 20 is mounted thereon, and bonded by applying heat. At this time, the ceramic substrate 10 is very thin, and the conductor
Since 1 is applied, the conductor 21 and the solder 32 can be connected without the end face electrode.

【0033】このように、本発明のセラミック基板10
を用いれば、端面電極を省略してチップ抵抗器20を得
ることができる。そのため、図3(b)に示すように短
冊状に分割して破面13に導体印刷を行う必要がない。
したがって、チップ抵抗器20の製造工程を簡略化でき
るとともに、一度短冊状とする必要もないため、1次分
割溝11の分割時に2次分割溝12が割れてしまっても
不都合が生じることはない。
As described above, the ceramic substrate 10 of the present invention
Is used, the chip resistor 20 can be obtained by omitting the end face electrode. Therefore, as shown in FIG. 3B, there is no need to divide into strips and print the conductor on the broken surface 13.
Therefore, the manufacturing process of the chip resistor 20 can be simplified, and it is not necessary to form the chip resistor once into a strip shape. Therefore, no inconvenience occurs even if the secondary division groove 12 is broken when the primary division groove 11 is divided. .

【0034】次に本発明の他の実施形態を説明する。Next, another embodiment of the present invention will be described.

【0035】図3(a)(b)に示すように、本発明の
セラミック基板10は、1次分割溝11の深さD1 、角
度θ1 をそれぞれ2次分割溝12の深さD2 、角度θ2
よりも大きくしてある。
As shown in FIGS. 3A and 3B, in the ceramic substrate 10 of the present invention, the depth D 1 of the primary dividing groove 11 and the angle θ 1 are respectively set to the depth D 2 of the secondary dividing groove 12. , Angle θ 2
It is larger than.

【0036】これは、最初に分割する1次分割溝11の
方を深くすることによって、1次分割溝11での分割時
に2次分割溝12で割れてしまうことを防止するためで
ある。また、1次分割溝11側の角度θ1 を大きくして
おくことによって、グリーンシートの加工時における刃
への張りつきを防止することができる。
This is to prevent the primary division groove 11 to be divided first from being broken by the secondary division groove 12 at the time of division by the primary division groove 11 by making it deeper. Further, by increasing the angle θ 1 on the side of the primary division groove 11, it is possible to prevent sticking to the blade during processing of the green sheet.

【0037】即ち、図3(c)に示すように、グリーン
シート10’に刃19を押し当てて分割溝を形成する場
合、その刃先角度θが小さいほど応力Fが横方向に伝わ
り、隣接する刃19にグリーンシート10’を押しつ
け、張りつきが生じやすくなる。そのため、刃先角度θ
を大きくするほど、グリーンシート10’の張りつきを
防止できることになる。
That is, as shown in FIG. 3 (c), when the blade 19 is pressed against the green sheet 10 'to form a dividing groove, the stress F is transmitted in the lateral direction as the cutting edge angle θ is smaller, and the adjacent groove is formed. The green sheet 10 'is pressed against the blade 19, and sticking is likely to occur. Therefore, the cutting edge angle θ
Is larger, the sticking of the green sheet 10 'can be prevented.

【0038】ただし、チップ抵抗器等が小型化されるに
つれて、この刃先角度θも極力小さくすることが求めれ
ていることから、本発明では、より深く形成する1次分
割溝11側のみ角度θ1 を大きくすることによって、グ
リーンシート10’の張りつきを防止するようにしたの
である。
However, as chip resistors and the like are miniaturized, it is required that the cutting edge angle θ be as small as possible. Therefore, in the present invention, the angle θ 1 is set only on the side of the primary division groove 11 which is formed deeper. Is increased to prevent sticking of the green sheet 10 '.

【0039】しかも、2次分割溝12側の角度θ2 を小
さくしておけば、導体21が2次分割溝12を伝わって
流れることを防止できる。
Moreover, if the angle θ 2 on the side of the secondary division groove 12 is reduced, the conductor 21 can be prevented from flowing along the secondary division groove 12.

【0040】なお、上記1次分割溝11の角度θ1 は3
0〜60°、2次分割溝12の角度θ2 は25〜40°
とし、両者の差θ1 −θ2 は5〜25°の範囲とするこ
とが好ましい。
The angle θ 1 of the primary dividing groove 11 is 3
0 to 60 °, the angle θ 2 of the secondary dividing groove 12 is 25 to 40 °
It is preferable that the difference θ 1 −θ 2 be in the range of 5 to 25 °.

【0041】また、上記1次分割溝11の深さD1 と2
次分割溝12の深さD2 の差D1 −D2 は0.03〜
0.1mmの範囲内とすることが好ましい。
Further, the depths D 1 and D 2 of the primary
The difference D 1 -D 2 of the depth D 2 of the next dividing grooves 12 0.03
It is preferable to set it within the range of 0.1 mm.

【0042】そして、上記のように1次分割溝11と2
次分割溝12の角度や深さを設定しておけば、1次分割
溝11の分割時に2次分割溝12が割れてしまうことを
防止できるため、図5(b)に示すような短冊状に分割
して端面電極を印刷する工程を行っても不良が生じるこ
とを防止できる。
Then, as described above, the primary division grooves 11 and 2
If the angle and the depth of the secondary division groove 12 are set, it is possible to prevent the secondary division groove 12 from being broken at the time of dividing the primary division groove 11, so that the rectangular shape as shown in FIG. Even if the step of printing the end face electrode is performed by dividing into two, the occurrence of defects can be prevented.

【0043】さらに、本発明の他の実施形態を図4に示
すように、上記1次分割溝11における2次分割溝12
との交点近傍を狭くすることもできる。そのため、1次
分割溝11上に印刷した導体ペーストが2次分割溝12
側に伝わることを防止することができる。
FIG. 4 shows another embodiment of the present invention, as shown in FIG.
Can be narrowed near the intersection with. Therefore, the conductive paste printed on the primary division grooves 11 is
It can be prevented from being transmitted to the side.

【0044】なお、図4に示すような形状とするために
は、まずグリーンシート10’に刃19を押し当てて1
次分割溝11側を先に形成した後、これと直角方向に刃
19を押し当てて2次分割溝12を形成し、この時に先
に形成した1次分割溝11側がやや変形するように刃1
9を押し当てることによって、図4に示すように1次分
割溝11側の交点近傍を狭くすることができる。
In order to obtain the shape as shown in FIG. 4, first, the blade 19 is pressed against the green sheet 10 'to make the shape as shown in FIG.
After the side of the next divisional groove 11 is formed first, the blade 19 is pressed in a direction perpendicular to the side to form the secondary divisional groove 12, and the blade is formed so that the side of the primary divisional groove 11 formed at this time is slightly deformed. 1
By pressing 9, the vicinity of the intersection on the side of the primary division groove 11 can be narrowed as shown in FIG. 4.

【0045】また、1次分割溝11は、通常、セラミッ
ク基板10上に形成される最小領域の短辺側を形成し、
多連チップ抵抗等を製造するためにスルーホールを有す
る場合は、スルーホール上に形成される分割溝が1次分
割溝11となる。
The primary division groove 11 usually forms a short side of a minimum region formed on the ceramic substrate 10,
When a through-hole is provided for manufacturing a multiple chip resistor or the like, the division groove formed on the through-hole becomes the primary division groove 11.

【0046】以上の本発明のセラミック基板10では、
上述したように厚みTを非常に薄くしてあるため、搬送
や印刷、焼成工程での破損を防止するために、その組
成、粒径を以下のように設定する。
In the above ceramic substrate 10 of the present invention,
Since the thickness T is extremely thin as described above, the composition and the particle size are set as follows in order to prevent breakage in the transporting, printing, and firing steps.

【0047】即ち、上記セラミック基板10は、93〜
97重量%のAl2 3 を主成分とし、添加成分の重量
比がSiO2 52〜68%、CaO2〜10.5%、M
gO25.5〜42%の範囲内となるようにしてある。
また、その平均粒径を12μm以下としてある。
That is, the ceramic substrate 10
97% by weight of Al 2 O 3 as a main component, and the weight ratio of added components is 52 to 68% of SiO 2, 2 to 10.5% of CaO,
gO is set to be in the range of 25.5 to 42%.
The average particle size is set to 12 μm or less.

【0048】ここで、Al2 3 含有量を上記範囲とし
たのは、93重量%未満では強度が低下するために、分
割溝が入った状態で印刷時の圧力やその他の取り扱い時
の衝撃等により破損する恐れがあるためである。また、
97重量%を超えると、製造コスト、主に焼成コストや
設備コストが高くなるともに、導体21等との接着性が
低下するためである。
The reason why the Al 2 O 3 content is set in the above range is that if the content is less than 93% by weight, the strength is reduced. This is because there is a risk of damage due to such factors. Also,
If the content exceeds 97% by weight, the manufacturing cost, mainly the sintering cost and the equipment cost are increased, and the adhesion to the conductor 21 and the like is reduced.

【0049】また、添加成分の重量比を上記範囲内とす
ることにより、焼成時のαーアルミナやスピネル以外の
異常結晶の晶出を防止し、安定した分割性を維持するこ
とができる。
Further, by setting the weight ratio of the added components within the above range, it is possible to prevent abnormal crystals other than α-alumina and spinel from being crystallized at the time of firing, and to maintain a stable splitting property.

【0050】さらに、平均結晶粒径を上記範囲内とした
のは、12μmを超えると強度が低下して、印刷時や取
扱時等に破損する恐れが生じるためである。
The reason why the average crystal grain size is set within the above range is that if the average crystal grain size exceeds 12 μm, the strength is reduced and there is a possibility that the crystal may be damaged during printing or handling.

【0051】なお、上記実施形態ではセラミック基板1
0の片面側に1次分割溝11、2次分割溝12を形成し
た例を示したが、両面にこれらの分割溝を形成すること
もできる。この場合は、両面の深さの和を分割溝の深さ
Dとし、この深さDをセラミック基板10の厚みTの3
0〜70%の範囲内としておけば良い。
In the above embodiment, the ceramic substrate 1
Although the example in which the primary division grooves 11 and the secondary division grooves 12 are formed on one side of the reference numeral 0 is shown, these division grooves may be formed on both sides. In this case, the sum of the depths on both sides is defined as the depth D of the dividing groove, and this depth D is set to 3 times the thickness T of the ceramic substrate 10.
What is necessary is just to set it in the range of 0-70%.

【0052】また、以上の実施形態では、チップ抵抗器
20を例にとって説明したが、本発明のセラミック基板
10はその他に、チップコンデンサやハイブリッドIC
用基板等の各種電子部品の製造に用いることができる。
In the above embodiment, the chip resistor 20 has been described as an example. However, the ceramic substrate 10 of the present invention may be replaced by a chip capacitor or a hybrid IC.
It can be used for manufacturing various electronic components such as a substrate for use.

【0053】[0053]

【実施例】実施例1 Al2 3 含有量96重量%のアルミナセラミックスを
用い、その厚みTを表1に示すように種々に変化させ、
分割溝の深さDは基板の厚みTの60%とし、分割溝で
囲まれる最小領域の大きさを0.6×0.3mmとした
セラミック基板10を作製した。
Example 1 Alumina ceramics having an Al 2 O 3 content of 96% by weight was used, and its thickness T was variously changed as shown in Table 1.
The ceramic substrate 10 was manufactured in which the depth D of the dividing groove was 60% of the thickness T of the substrate, and the size of the minimum region surrounded by the dividing groove was 0.6 × 0.3 mm.

【0054】それぞれ、片面のみに導体21と抵抗体2
2を印刷し、1次分割後の破面に導体印刷を行わずに2
次分割を行ってチップ抵抗器20を作製した。それぞ
れ、回路基板30上に搭載して、ハンダ32との接続に
より導通が取れるかどうかを調べた。その結果、導通が
取れたものを○、とれないものを×として表1に示す。
The conductor 21 and the resistor 2 are provided only on one side, respectively.
2 without printing conductor on the fractured surface after primary division
Next, the chip resistor 20 was manufactured. Each of them was mounted on the circuit board 30, and it was examined whether or not conduction was obtained by connection with the solder 32. As a result, Table 1 shows the case where conduction was obtained, and X the case where conduction was not obtained.

【0055】この結果より、厚みTが0.3mmを超え
るものでは導通が取れなかったのに対し、厚みTを0.
3mm以下とすれば導通を取ることができた。
From these results, it was found that electrical conduction could not be obtained when the thickness T exceeded 0.3 mm.
If it was 3 mm or less, conduction could be obtained.

【0056】[0056]

【表1】 [Table 1]

【0057】実施例2 次に、実施例1と同様にして、セラミック基板10の厚
さTと、これに対する1次分割溝11の深さDの比を表
2に示すように種々に変化させたものを作製した。
Embodiment 2 Next, in the same manner as in Embodiment 1, the ratio of the thickness T of the ceramic substrate 10 to the depth D of the primary division groove 11 relative thereto was varied as shown in Table 2. Was produced.

【0058】それぞれのセラミック基板10を、導体2
1や抵抗体22を印刷する工程に流し、工程中にセラミ
ック基板10の割れの評価を行った。その結果、工程中
に割れが生じたものを×、割れなかったものを○で示
す。
Each ceramic substrate 10 is connected to the conductor 2
1 and the resistor 22 were printed, and cracking of the ceramic substrate 10 was evaluated during the process. As a result, x indicates that a crack occurred during the process, and o indicates that it did not.

【0059】結果を表2に示すように、セラミック基板
10の厚みTが0.1mm未満では、他の工程で分割溝
の割れが発生しやすかった。したがって、実施例1の結
果と合わせて、厚みTは0.1〜0.3mmの範囲が好
ましいことがわかる。
As shown in Table 2, when the thickness T of the ceramic substrate 10 was less than 0.1 mm, cracks in the division grooves were likely to occur in other steps. Therefore, it can be seen that the thickness T is preferably in the range of 0.1 to 0.3 mm in combination with the result of Example 1.

【0060】また、厚みTを0.1mm以上とし、1次
分割溝11の深さDをこの厚みTの70%以下としてお
けば、他の工程での分割溝の割れの発生を防止すること
ができる。
If the thickness T is set to 0.1 mm or more and the depth D of the primary division groove 11 is set to 70% or less of the thickness T, it is possible to prevent the division groove from cracking in other steps. Can be.

【0061】[0061]

【表2】 [Table 2]

【0062】実施例3 次に、実施例2と同様にセラミック基板10の厚みTと
1次分割溝11の深さDを変更し、導体21や抵抗体2
2を印刷、焼き付けした後、1次分割溝11より分割機
を用い、短冊状に分割した。この時、1次分割溝11だ
けで分割できたものを○、他でも割れたものを×で示
す。
Embodiment 3 Next, similarly to Embodiment 2, the thickness T of the ceramic substrate 10 and the depth D of the primary division groove 11 were changed, and the conductor 21 and the resistor 2 were changed.
2 was printed and baked, and divided into strips from the primary dividing groove 11 using a dividing machine. At this time, those that could be divided only by the primary division grooves 11 are indicated by ○, and those that were otherwise broken are indicated by X.

【0063】結果を表3に示すように、セラミック基板
10の厚みTを0.1〜0.3mmの範囲とした場合、
D/Tを30%以上としておけば、良好な分割性が得ら
れることがわかる。
As shown in Table 3, when the thickness T of the ceramic substrate 10 is in the range of 0.1 to 0.3 mm,
It can be seen that if D / T is set to 30% or more, good division properties can be obtained.

【0064】[0064]

【表3】 [Table 3]

【0065】実施例4 次に、Al2 3 含有量96重量%のアルミナセラミッ
クスを用い、その厚みTを表4に示すように種々に変化
させ、分割溝の深さDは基板の厚みTの60%とし、分
割溝で囲まれる最小領域の短辺の長さXを種々に変化さ
せたセラミック基板10を作製した。
Example 4 Next, an alumina ceramic having an Al 2 O 3 content of 96% by weight was used, and its thickness T was variously changed as shown in Table 4. The ceramic substrate 10 was manufactured in which the length X of the short side of the minimum region surrounded by the division grooves was variously changed.

【0066】各セラミック基板10を用いてチップ抵抗
器20を製造し、分割性の評価を行った。次に、得られ
たチップ抵抗器20を回路基板30に高速マウントした
際の導通及びクラックの有無を調べた。なお、分割性に
ついては、分割溝に沿って正しく割れたものを○、割れ
なかったものを×で示す。また、導通及びクラックの検
査は、1000個中1個でもクラック又は導通不良が発
生しているものを×、発生していないものを○で示す。
A chip resistor 20 was manufactured using each of the ceramic substrates 10 and the dividability was evaluated. Next, conduction and cracks were examined when the obtained chip resistor 20 was mounted on the circuit board 30 at high speed. Regarding the dividability, those that were correctly broken along the dividing groove are indicated by ○, and those that were not broken are indicated by x. In the inspection of conduction and cracks, even one out of 1,000 cracks or conduction failures are indicated by x, and those not occurring are indicated by o.

【0067】結果を表4に示すように、短辺の長さXに
対する厚みTの比T/Xを0.25〜1.0の範囲とし
ておけば、分割性が良好で、マウント時のクラックや導
通不良を防止できることがわかる。
As shown in Table 4, when the ratio T / X of the thickness T to the length X of the short side is set in the range of 0.25 to 1.0, the dividing property is good and the crack at the time of mounting is good. It can be seen that the continuity failure and the conduction failure can be prevented.

【0068】[0068]

【表4】 [Table 4]

【0069】実施例5 次に、上記と同様のセラミック基板10において、1次
分割溝11の深さD1を厚みTの60%、2次分割溝1
2の深さD2 を厚みTの50%とし、1次分割溝11の
角度θ1 を種々に変化させたものを作製した。なお、い
ずれも2次分割溝12の角度θ2 はθ1 よりも小さくし
た。
Embodiment 5 Next, in the same ceramic substrate 10 as described above, the depth D 1 of the primary dividing groove 11 is set to 60% of the thickness T,
2 of the depth D 2 to 50% of the thickness T, to produce what is varied the angle theta 1 of the primary split grooves 11 in various ways. In each case, the angle θ 2 of the secondary division groove 12 was smaller than θ 1 .

【0070】それぞれ、グリーンシート10’に分割溝
を敷設する際に、刃19にグリーンシート10’が付着
しないものを○、付着するものを×で示す。また、導体
ペースト印刷時に隣の導体と1次分割溝11を介して短
絡しないものを○、短絡するものを×で示す。
When a dividing groove is laid in the green sheet 10 ′, the one to which the green sheet 10 ′ does not adhere to the blade 19 is indicated by 、, and the one to which it adheres is indicated by X. In addition, those that do not short-circuit with the adjacent conductor through the primary division groove 11 during printing of the conductor paste are indicated by ○, and those that short-circuit are indicated by x.

【0071】結果を表5に示すように、1次分割溝11
の角度θ1 を30〜60°としておけば、刃19への付
着はなく、導体ペーストの短絡も防止できることがわか
る。
As shown in Table 5, the results are shown in Table 5.
It can be seen that if the angle θ 1 is set to 30 to 60 °, there is no adhesion to the blade 19 and the short circuit of the conductive paste can be prevented.

【0072】[0072]

【表5】 [Table 5]

【0073】実施例6 次に、実施例5と同様にして、2次分割溝12の角度θ
2 を種々に変化させたものを作製した。
Embodiment 6 Next, in the same manner as in Embodiment 5, the angle θ
2 were variously changed.

【0074】それぞれ、導体21、抵抗体22、オーバ
ーコートガラスの保護層23を印刷、焼付けを行いトリ
ミング後、1次分割溝11より分割を行い、破面13に
導体ペーストを塗布して2次分割溝12へのペーストの
はい上がりを確認した。はい上がりが顕著で2次分割溝
12を介して両方の破面13がペーストでつながったら
×、つながらなかったら○で示す。更に分割溝形成時に
刃19にグリーンシート10’が付着したものを×、付
着しなかったものを○で示す。
The conductor 21, the resistor 22, and the protective layer 23 of the overcoat glass are printed, baked and trimmed, and then divided from the primary dividing groove 11, and a conductive paste is applied to the fracture surface 13 to apply a secondary paste. The rise of the paste into the dividing grooves 12 was confirmed. The rise is remarkable, and when both of the fractured surfaces 13 are connected by the paste via the secondary dividing grooves 12, it is indicated by x, and when not connected, it is indicated by ○. Further, those where the green sheet 10 ′ adhered to the blade 19 at the time of forming the dividing groove are indicated by x, and those not adhered are indicated by ○.

【0075】結果を表6に示すように、2時分割溝12
の角度θ2 を25〜40°の範囲内としておけば、導電
ペーストの短絡やグリーンシートの刃への付着を防止で
きることがわかる。なお、2次分割溝12の深さD2
1次分割溝11よりも小さいために、2次分割溝12で
は角度θ2 を25゜まで小さくしても付着が発生しなか
った。
The results are shown in Table 6, as shown in FIG.
It can be seen that if the angle θ 2 is within the range of 25 to 40 °, short-circuiting of the conductive paste and adhesion of the green sheet to the blade can be prevented. Since the depth D 2 of the secondary division groove 12 is smaller than that of the primary division groove 11, no adhesion occurs in the secondary division groove 12 even if the angle θ 2 is reduced to 25 °.

【0076】[0076]

【表6】 [Table 6]

【0077】実施例7 次に、本発明のセラミック基板10を形成するアルミナ
セラミックスとして、セラミックスの平均結晶粒径とA
2 3 含有量を変更し、抗折強度を測定した結果を表
7に示す。
Embodiment 7 Next, as an alumina ceramic for forming the ceramic substrate 10 of the present invention, the average crystal grain size of the ceramic and A
Table 7 shows the results obtained by changing the l 2 O 3 content and measuring the bending strength.

【0078】一般に、搬送時等の破損を防止するために
は抗折強度が30kg/mm2 以上必要であり、この点
から、平均結晶粒径12μm以下、Al2 3 含有量9
3重量%以上としておけば良いことがわかる。
Generally, in order to prevent breakage during transportation or the like, a transverse rupture strength of 30 kg / mm 2 or more is required. From this point, the average crystal grain size is 12 μm or less, and the Al 2 O 3 content is 9 or less.
It can be seen that the content should be set to 3% by weight or more.

【0079】[0079]

【表7】 [Table 7]

【0080】実施例8 次に、実施例7と同様にして、Al2 3 含有量と添加
物の組成比を変更し、それぞれ焼結性と異常結晶の有無
を評価した。なお、焼結性については、比重が3.65
以上のものを○、3.65未満のものを焼結不良として
×で示す。また、異常結晶については、αアルミナとス
ピネル以外の結晶が析出したものを×、その他のものを
○とした。
Example 8 Next, in the same manner as in Example 7, the Al 2 O 3 content and the composition ratio of the additives were changed, and the sinterability and the presence or absence of abnormal crystals were evaluated. As for the sinterability, the specific gravity was 3.65.
Those described above are indicated by ○, and those with less than 3.65 are indicated by x as poor sintering. Regarding the abnormal crystals, those in which crystals other than α-alumina and spinel were precipitated were evaluated as x, and the others were evaluated as ○.

【0081】結果を表8に示すように、Al2 3 含有
量93〜97重量%で、添加成分の重量比がSiO2
2〜68%、CaO2〜10.5%、MgO25.5〜
42%の範囲内であれば、焼結性に優れ、異常結晶の発
生を防ぐことができる。
As shown in Table 8, when the Al 2 O 3 content is 93 to 97% by weight and the weight ratio of the added components is SiO 2 5
2 to 68%, CaO 2 to 10.5%, MgO 25.5 to
When the content is within the range of 42%, the sinterability is excellent, and occurrence of abnormal crystals can be prevented.

【0082】[0082]

【表8】 [Table 8]

【0083】[0083]

【発明の効果】以上にように本発明によれば、各種電子
部品の母材として用いられるセラミック基板であって、
厚みを0.1〜0.3mmとし、この厚みに対して30
〜70%の深さの分割溝を有することによって、このセ
ラミック基板を用いてチップ抵抗器等を製造する場合
は、基板の片側のみに導体や抵抗体等を塗布するだけで
よく、端面電極を塗布せずに回路基板上に搭載すること
ができる。そのため、チップ抵抗器等の製造工程を簡略
化できるとともに、1次分割溝の分割次に2時分割溝で
割れてしまっても不都合が生じることがなく、また、各
種電子部品の小型化に対応することができる。
As described above, according to the present invention, there is provided a ceramic substrate used as a base material of various electronic components,
The thickness is set to 0.1 to 0.3 mm.
When a chip resistor or the like is manufactured using this ceramic substrate by having a dividing groove having a depth of about 70%, it is only necessary to apply a conductor, a resistor, or the like to only one side of the substrate. It can be mounted on a circuit board without coating. Therefore, the manufacturing process of the chip resistor and the like can be simplified, and there is no inconvenience even if the primary division groove is split and then the two-time division groove is broken. can do.

【0084】また、本発明によれば、各種電子部品の母
材として用いられるセラミック基板であって、縦横の分
割溝を有し、この分割溝に囲まれる最小領域の短辺に対
する基板の厚みの比を0.25〜1.0の範囲としたこ
とによって、優れた分割性を維持したまま、高速で回路
基板上にマウントした場合でも、クラック等の発生を防
止できる。
Further, according to the present invention, there is provided a ceramic substrate used as a base material of various electronic components, which has vertical and horizontal dividing grooves, and a thickness of the substrate with respect to a short side of a minimum region surrounded by the dividing grooves. By setting the ratio in the range of 0.25 to 1.0, generation of cracks and the like can be prevented even when mounted on a circuit board at a high speed while maintaining excellent division performance.

【0085】さらに本発明によれば、各種電子部品の母
材として用いられるセラミック基板であって、縦横の1
次分割溝と2次分割溝を有し、1次分割溝の深さと角度
をそれぞれ2次分割溝よりも大きくしたことによって、
グリーンシートに分割溝を加工する際に、刃に張りつく
ことを防止できるとともに、導電ペーストが分割溝を流
れて短絡することを防止し、また1次分割溝の分割時に
2次分割溝が割れてしまうことを防止できる。
Further, according to the present invention, there is provided a ceramic substrate used as a base material of various electronic components, wherein
By having a secondary division groove and a secondary division groove, by making the depth and angle of the primary division groove larger than the secondary division grooves,
When processing the dividing groove on the green sheet, it can prevent sticking to the blade, prevent the conductive paste from flowing through the dividing groove and short-circuit, and break the secondary dividing groove when dividing the primary dividing groove. Can be prevented.

【0086】また、上記セラミック基板の材質として、
93〜97重量%のAl2 3 を主成分とし、添加成分
の重量比がSiO2 52〜68%、CaO2〜10.5
%、MgO25.5〜42%であるアルミナセラミック
スを用いることにより、基板の強度を向上し、搬送時等
での破損を防止できる。
Further, as the material of the ceramic substrate,
93 to 97% by weight of Al 2 O 3 as a main component, and the weight ratio of added components is 52 to 68% of SiO 2 and 2 to 10.5% of CaO.
%, And the use of alumina ceramics of 25.5 to 42% of MgO can improve the strength of the substrate and prevent damage during transportation and the like.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は本発明のセラミック基板を示す斜視
図、(b)は断面図である。
FIG. 1A is a perspective view showing a ceramic substrate of the present invention, and FIG. 1B is a sectional view.

【図2】本発明のセラミック基板を用いたチップ抵抗器
を回路基板に搭載した状態の断面図である。
FIG. 2 is a cross-sectional view showing a state where a chip resistor using the ceramic substrate of the present invention is mounted on a circuit board.

【図3】(a)は本発明の他の実施形態のセラミック基
板の1次分割溝に沿った断面図、(b)は1次分割溝に
垂直な断面図、(c)はグリーンシートの加工方法を示
す断面図である。
3A is a cross-sectional view along a primary division groove of a ceramic substrate according to another embodiment of the present invention, FIG. 3B is a cross-sectional view perpendicular to the primary division groove, and FIG. It is sectional drawing which shows a processing method.

【図4】本発明のセラミック基板の分割溝を示す平面図
である。
FIG. 4 is a plan view showing a dividing groove of the ceramic substrate of the present invention.

【図5】(a)は従来のセラミック基板を示す斜視図、
(b)は短冊状に分割した状態の斜視図、(c)はこの
基板を用いたチップ抵抗器を回路基板に搭載した状態の
断面図である。
FIG. 5A is a perspective view showing a conventional ceramic substrate,
(B) is a perspective view in a state of being divided into strips, and (c) is a cross-sectional view in a state where a chip resistor using this substrate is mounted on a circuit board.

【符号の説明】[Explanation of symbols]

10:セラミック基板 11:1次分割溝 12:2次分割溝 20:チップ抵抗器 21:導体 22:抵抗体 23:保護層 30:回路基板 31:導体 32:ハンダ Reference Signs List 10: ceramic substrate 11: primary division groove 12: secondary division groove 20: chip resistor 21: conductor 22: resistor 23: protective layer 30: circuit board 31: conductor 32: solder

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】各種電子部品の母材として用いられるセラ
ミック基板であって、厚みが0.1〜0.3mmであ
り、この厚みに対して30〜70%の深さの分割溝を有
することを特徴とする電子部品用セラミック基板。
1. A ceramic substrate used as a base material of various electronic parts, having a thickness of 0.1 to 0.3 mm, and having a dividing groove having a depth of 30 to 70% of the thickness. A ceramic substrate for electronic components characterized by the above-mentioned.
【請求項2】各種電子部品の母材として用いられるセラ
ミック基板であって、縦横の分割溝を有し、この分割溝
に囲まれる最小領域の短辺に対する基板の厚みの比を
0.25〜1.0の範囲にしたことを特徴とする電子部
品用セラミック基板。
2. A ceramic substrate used as a base material of various electronic components, having a vertical and horizontal dividing groove, wherein a ratio of a thickness of the substrate to a short side of a minimum region surrounded by the dividing groove is 0.25 to 0.25. A ceramic substrate for electronic components, characterized in that the range is 1.0.
【請求項3】各種電子部品の母材として用いられるセラ
ミック基板であって、縦横の1次分割溝と2次分割溝を
有し、1次分割溝の深さと角度をそれぞれ2次分割溝よ
りも大きくしたことを特徴とする電子部品用セラミック
基板。
3. A ceramic substrate used as a base material of various electronic components, having a vertical and horizontal primary division groove and a secondary division groove, wherein the depth and angle of the primary division groove are respectively set to be smaller than those of the secondary division groove. A ceramic substrate for electronic components, characterized by having a larger size.
【請求項4】上記1次分割溝の角度を30〜60°、2
次分割溝の角度を25〜40°の範囲としたことを特徴
とする請求項3記載の電子部品用セラミック基板。
4. The angle of said primary dividing groove is 30-60 °, 2
4. The ceramic substrate for electronic parts according to claim 3, wherein the angle of the next division groove is in a range of 25 to 40 [deg.].
【請求項5】各種電子部品の母材として用いられるセラ
ミック基板であって、縦横の1次分割溝と2次分割溝を
有し、上記1次分割溝の幅が、2次分割溝との交点で狭
くなっていることを特徴とする電子部品用セラミック基
板。
5. A ceramic substrate used as a base material of various electronic components, comprising a vertical and horizontal primary division groove and a secondary division groove, wherein the width of the primary division groove is different from that of the secondary division groove. A ceramic substrate for an electronic component, characterized in that it is narrowed at an intersection.
【請求項6】上記セラミック基板が、93〜97重量%
のAl2 3 を主成分とし、添加成分の重量比がSiO
2 52〜68%、CaO2〜10.5%、MgO25.
5〜42%であることを特徴とする請求項1、2、3又
は5記載の電子部品用セラミック基板。
6. The method according to claim 1, wherein said ceramic substrate is 93 to 97% by weight.
Of Al 2 O 3 as the main component, and the weight ratio of the added components is SiO 2
2 52-68%, CaO2-10.5%, MgO25.
The ceramic substrate for an electronic component according to claim 1, wherein the content is 5 to 42%.
【請求項7】上記セラミック基板が、平均粒径12μm
以下のアルミナセラミックスからなることを特徴とする
請求項1、2、3又は5記載の電子部品用セラミック基
板。
7. The ceramic substrate according to claim 1, wherein the average particle diameter is 12 μm.
6. The ceramic substrate for an electronic component according to claim 1, wherein the ceramic substrate is made of the following alumina ceramics.
JP26758297A 1997-09-30 1997-09-30 Ceramic substrates and chip resistors for electronic components Expired - Fee Related JP3574730B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26758297A JP3574730B2 (en) 1997-09-30 1997-09-30 Ceramic substrates and chip resistors for electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26758297A JP3574730B2 (en) 1997-09-30 1997-09-30 Ceramic substrates and chip resistors for electronic components

Publications (2)

Publication Number Publication Date
JPH11111502A true JPH11111502A (en) 1999-04-23
JP3574730B2 JP3574730B2 (en) 2004-10-06

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ID=17446781

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Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP3574730B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001176708A (en) * 1999-12-15 2001-06-29 Matsushita Electric Ind Co Ltd Resistor
JP2002011718A (en) * 2000-06-28 2002-01-15 Ngk Spark Plug Co Ltd Method for manufacturing ceramic connected substrate
JP2007173867A (en) * 2007-03-20 2007-07-05 Koa Corp Substrate for electronic component, and method for manufacturing electronic component
KR100888130B1 (en) * 2004-01-23 2009-03-11 허스키 인젝션 몰딩 시스템즈 리미티드 Injection molding method and apparatus for continuous plastication

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001176708A (en) * 1999-12-15 2001-06-29 Matsushita Electric Ind Co Ltd Resistor
JP2002011718A (en) * 2000-06-28 2002-01-15 Ngk Spark Plug Co Ltd Method for manufacturing ceramic connected substrate
KR100888130B1 (en) * 2004-01-23 2009-03-11 허스키 인젝션 몰딩 시스템즈 리미티드 Injection molding method and apparatus for continuous plastication
JP2007173867A (en) * 2007-03-20 2007-07-05 Koa Corp Substrate for electronic component, and method for manufacturing electronic component

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