JPH11102995A - Manufacture of wiring board - Google Patents
Manufacture of wiring boardInfo
- Publication number
- JPH11102995A JPH11102995A JP26240597A JP26240597A JPH11102995A JP H11102995 A JPH11102995 A JP H11102995A JP 26240597 A JP26240597 A JP 26240597A JP 26240597 A JP26240597 A JP 26240597A JP H11102995 A JPH11102995 A JP H11102995A
- Authority
- JP
- Japan
- Prior art keywords
- wiring conductor
- epoxy resin
- precursor
- powder
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体素子を収容す
るための半導体素子収納用パッケージや混成集積回路基
板等に用いられる配線基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device and a wiring board used for a hybrid integrated circuit board.
【０００２】[0002]
【従来の技術】従来、配線基板、例えば半導体素子を収
容する半導体素子収納用パッケージに使用される配線基
板は、酸化アルミニウム質焼結体等のセラミックスより
成り、その上面中央部に半導体素子を収容するための凹
部を有する絶縁基体と、この絶縁基体の凹部周辺から下
面にかけて導出されたタングステンやモリブデン等の高
融点金属粉末から成る配線導体とから構成されており、
絶縁基体の凹部底面に半導体素子をガラスや樹脂・ロウ
材等の接着剤を介して接着固定するとともに半導体素子
の各電極を例えばボンディングワイヤ等の電気的接続手
段を介して配線導体に電気的に接続し、しかる後、絶縁
基体の上面に金属やセラミックス等から成る蓋体を絶縁
基体の凹部を塞ぐようにしてガラスや樹脂・ロウ材等の
封止材を介して接合させ、絶縁基体の凹部内に半導体素
子を気密に収容することによって製品としての半導体装
置となる。そして、配線導体の絶縁基体下面に導出した
部位を外部の電気回路基板の配線導体に半田等の電気的
接続手段を介して接続することにより収容する半導体素
子が外部電気回路基板に電気的に接続されることとな
る。2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element is made of ceramics such as an aluminum oxide sintered body, and a semiconductor element is housed in a central portion of an upper surface thereof. And a wiring conductor made of a refractory metal powder such as tungsten or molybdenum which is led out from the periphery of the recess to the lower surface of the insulating base, and
The semiconductor element is adhered and fixed to the bottom surface of the concave portion of the insulating base via an adhesive such as glass, resin or brazing material, and each electrode of the semiconductor element is electrically connected to a wiring conductor through an electrical connection means such as a bonding wire. After that, a lid made of metal, ceramics, or the like is bonded to the upper surface of the insulating base via a sealing material such as glass, resin, or brazing material so as to cover the concave part of the insulating base. A semiconductor device as a product is obtained by hermetically housing a semiconductor element therein. Then, the semiconductor element accommodated by connecting the portion of the wiring conductor led out to the lower surface of the insulating base to the wiring conductor of the external electric circuit board via an electric connection means such as solder is electrically connected to the external electric circuit board. Will be done.
【０００３】この従来の配線基板はセラミックグリーン
シート積層法によって製作され、具体的には、酸化アル
ミニウム・酸化珪素・酸化マグネシウム・酸化カルシウ
ム等のセラミック原料粉末に適当な有機バインダ・溶剤
等を添加混合して泥漿状となすとともにこれを従来周知
のドクターブレード法を採用してシート状とすることに
よって複数のセラミックグリーンシートを得、しかる
後、これらのセラミックグリーンシートに適当な打ち抜
き加工を施すとともに配線導体となる金属ペーストを所
定の配線導体のパターンに印刷塗布し、最後にこれらの
セラミックグリーンシートを所定の順に上下に積層して
生セラミック成形体となすとともにこれを還元雰囲気中
約1600℃の高温で焼成することによって製作される。This conventional wiring board is manufactured by a ceramic green sheet laminating method. Specifically, an appropriate organic binder, a solvent and the like are added to a ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide. In addition, a plurality of ceramic green sheets are obtained by forming into a sheet shape by employing a conventionally known doctor blade method, and thereafter, these ceramic green sheets are subjected to appropriate punching and wiring. A metal paste to be a conductor is printed and applied on a predetermined wiring conductor pattern, and finally, these ceramic green sheets are stacked up and down in a predetermined order to form a green ceramic molded body, which is then heated at a high temperature of about 1600 ° C. in a reducing atmosphere. It is manufactured by firing.
【０００４】しかしながら、この従来の配線基板は、絶
縁基体を構成する酸化アルミニウム質焼結体等のセラミ
ックスが硬くて脆い性質を有するため、搬送工程や半導
体装置製作の自動ライン等において配線基板同士が、あ
るいは配線基板と半導体装置製作自動ラインの一部とが
激しく衝突することにより絶縁基体に欠けや割れ・クラ
ック等が発生し、その結果、配線導体に断線を生じたり
半導体素子を気密に収容することができなくなったりし
て、半導体素子を長期間にわたり正常かつ安定に作動さ
せることができなくなるという欠点を有していた。However, in the conventional wiring board, since ceramics such as an aluminum oxide sintered body constituting the insulating base have a hard and brittle property, the wiring boards are not connected to each other in a transfer process or an automatic line for manufacturing semiconductor devices. Alternatively, a severe collision between the wiring substrate and a part of the automatic semiconductor device manufacturing line may cause the insulating substrate to be chipped, cracked, cracked, etc., resulting in disconnection of the wiring conductor or airtight housing of the semiconductor element. Or the semiconductor device cannot be operated normally and stably for a long period of time.
【０００５】また、この従来の配線基板の製造方法によ
れば、生セラミック成形体を焼成する際に不均一な焼成
収縮が発生することによりその焼成後に得られる配線基
板に反り等の変形や寸法のばらつきが発生し、その結
果、半導体素子と配線導体とを電気的に正確かつ確実に
接続することが困難であるという欠点を有していた。In addition, according to this conventional method for manufacturing a wiring board, uneven firing shrinkage occurs during firing of the green ceramic molded body, so that the wiring board obtained after the firing has a deformation or size such as warpage. And as a result, it is difficult to electrically and accurately connect the semiconductor element and the wiring conductor with each other.
【０００６】そこで、配線基板の絶縁基体を、従来のセ
ラミックスに代えて無機絶縁物粉末を熱硬化性樹脂によ
り結合した材料からなる絶縁基板を積層することで形成
し、また配線導体を、従来のタングステンやモリブデン
等の高融点金属メタライズに代えて銅等の金属粉末を熱
硬化性樹脂により結合して成る材料で形成した配線基板
が提案されている。Therefore, the insulating substrate of the wiring substrate is formed by laminating an insulating substrate made of a material obtained by bonding inorganic insulating powder with a thermosetting resin in place of the conventional ceramics, and forming the wiring conductor by the conventional method. There has been proposed a wiring board formed of a material obtained by bonding a metal powder such as copper with a thermosetting resin instead of a metal having a high melting point such as tungsten or molybdenum.
【０００７】この無機絶縁物粉末を熱硬化性樹脂で結合
して成る絶縁基板と金属粉末を熱硬化性樹脂で結合して
成る配線導体とから成る配線基板は、熱硬化性樹脂の前
駆体と無機絶縁物粉末とを混合して成る半硬化状態の前
駆体シートを準備するとともにこれに適当な打ち抜き加
工を施し、次にこの前駆体シートに熱硬化性樹脂前駆体
と金属粉末とを混合して成る金属ペーストを所定パター
ンに印刷塗布し、最後に金属ペーストが印刷塗布された
前駆体シートを積層するとともにこれを約150〜300 ℃
の温度および約４〜100 ｋｇｆ／ｃｍ2 の圧力でホット
プレスして熱硬化させることによって製作される。A wiring board composed of an insulating substrate formed by bonding inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding metal powder with a thermosetting resin is composed of a precursor of a thermosetting resin, A precursor sheet in a semi-cured state is prepared by mixing with an inorganic insulating powder, and is subjected to an appropriate punching process. Then, a thermosetting resin precursor and a metal powder are mixed with the precursor sheet. The metal paste is printed and applied in a predetermined pattern, and finally, the precursor sheet on which the metal paste is printed and applied is laminated, and this is heated to about 150 to 300 ° C.
By hot pressing and thermosetting at a temperature of about 4 to 100 kgf / cm 2 .
【０００８】この配線基板によれば、絶縁基板となる無
機絶縁物粉末ならびに配線導体となる金属粉末をそれぞ
れ靭性に優れる熱硬化樹脂により結合して成ることか
ら、配線基板同士あるいは配線基板と半導体装置製作自
動ラインの一部とが激しく衝突しても絶縁基体に欠けや
割れ・クラック等が発生することは一切ない。According to this wiring board, the inorganic insulating powder serving as the insulating substrate and the metal powder serving as the wiring conductor are each bonded by a thermosetting resin having excellent toughness. Even if a part of the automatic production line collides violently, chipping, cracking or cracking of the insulating substrate does not occur at all.
【０００９】またこの配線基板の製造方法によれば、絶
縁基板および配線導体に含有される熱硬化性樹脂を熱硬
化させることにより製作されることから、焼成に伴う不
均一な収縮による変形や寸法のばらつきが発生すること
はない。Further, according to this method of manufacturing a wiring board, the wiring board is manufactured by thermosetting a thermosetting resin contained in an insulating substrate and a wiring conductor. Does not occur.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら、この無
機絶縁物粉末を熱硬化性樹脂で結合して成る絶縁基板と
金属粉末を熱硬化性樹脂で結合して成る配線導体とから
成る配線基板によれば、配線導体の被着強度が配線導体
中の熱硬化性樹脂の量に依存し、配線導体を絶縁基板に
強固に被着させるためには配線導体に含有される熱硬化
性樹脂の量を多くする必要があるが、強固に被着させる
ために配線導体となる金属ペースト中の熱硬化性樹脂前
駆体の含有量を多いものとすると、絶縁基板となる前駆
体シートに配線導体となる金属ペーストを印刷塗布して
これを熱硬化させる際に金属ペースト中に含まれる熱硬
化性樹脂前駆体が金属ペースト中の金属粉末同士の接触
界面に多量に入り込んで熱硬化するため、金属粉末同士
の良好な接触を阻害することとなり、その結果、配線導
体の電気抵抗が大きなものとなってしまうという欠点を
有していた。However, there is provided a wiring board comprising an insulating substrate formed by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding metal powder with a thermosetting resin. For example, the adhesion strength of the wiring conductor depends on the amount of the thermosetting resin in the wiring conductor, and in order to firmly adhere the wiring conductor to the insulating substrate, the amount of the thermosetting resin contained in the wiring conductor is required. Although it is necessary to increase the content, if the content of the thermosetting resin precursor in the metal paste that becomes the wiring conductor is large in order to adhere firmly, the metal that becomes the wiring conductor is formed on the precursor sheet that becomes the insulating substrate When the paste is printed and thermally cured, the thermosetting resin precursor contained in the metal paste penetrates into a large amount at the contact interface between the metal powders in the metal paste and is thermally cured. Prevent good contact Thing will be, as a result, the electric resistance of the wiring conductor had a defect that becomes large.
【００１１】本発明は上記事情に鑑みて案出されたもの
であり、その目的は、無機絶縁物粉末を熱硬化性樹脂で
結合して成る絶縁基板と金属粉末を熱硬化性樹脂で結合
して成る配線導体とから成る配線基板について、配線導
体中の金属粉末同士の接触を良好として配線導体の電気
抵抗を低いものとするとともに、金属粉末同士を強固に
結合し配線導体を絶縁基板に強固に被着させることがで
きる配線基板の製造方法を提供することにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to connect an insulating substrate formed by bonding an inorganic insulating powder with a thermosetting resin and a metal powder with a thermosetting resin. The wiring board composed of the wiring conductors made of the above, the contact between the metal powders in the wiring conductors is improved to reduce the electric resistance of the wiring conductors, and the metal powders are firmly connected to each other to firmly connect the wiring conductors to the insulating substrate. It is an object of the present invention to provide a method of manufacturing a wiring board that can be attached to a wiring board.
【００１２】[0012]
【課題を解決するための手段】本発明の配線基板の製造
方法は、ビスマレイミドトリアジン樹脂の前駆体に無機
絶縁物粉末および加熱により硬化剤と反応して硬化する
エポキシ樹脂主剤を添加混合して前駆体シートを準備す
る工程と、この前駆体シートに、金属粉末および前記エ
ポキシ樹脂主剤と反応する硬化剤を混合して成る金属ペ
ーストを所定パターンに印刷する工程と、この金属ペー
ストが印刷された前駆体シートを加熱して、前記無機絶
縁物粉末を熱硬化したビスマレイミドトリアジン樹脂で
結合して成る絶縁基板に、前記金属ペーストの金属粉末
を前記前駆体シートのエポキシ樹脂主剤と前記金属ペー
ストの硬化剤とを反応させて硬化させたエポキシ樹脂で
結合して成る配線導体を被着させる工程とを具備するこ
とを特徴とするものである。According to a method of manufacturing a wiring board of the present invention, a bismaleimide triazine resin precursor is mixed with an inorganic insulating powder and an epoxy resin base material which is cured by reacting with a curing agent by heating. A step of preparing a precursor sheet, a step of printing a metal paste formed by mixing a metal powder and a curing agent that reacts with the epoxy resin base material in a predetermined pattern on the precursor sheet, and printing the metal paste. The precursor sheet is heated, and the metal powder of the metal paste is mixed with the epoxy resin base material of the precursor sheet and the metal paste on an insulating substrate formed by bonding the inorganic insulating powder with a thermosetting bismaleimide triazine resin. Applying a wiring conductor formed by bonding with an epoxy resin cured by reacting with a curing agent. It is.
【００１３】本発明の配線基板の製造方法によれば、金
属ペースト中の金属粉末を結合して配線導体を形成する
エポキシ樹脂は前駆体シート内部のエポキシ樹脂主剤と
その前駆体シートに印刷された金属ペースト中の硬化剤
との反応によりエポキシ樹脂主剤が硬化されることによ
り形成され、配線導体を形成するエポキシ樹脂となるエ
ポキシ樹脂主剤が前駆体シートから供給されることから
金属ペースト中に多量のエポキシ樹脂主剤を含有させる
必要はなく、このため金属ペースト中の金属粉末同士の
接触界面にエポキシ樹脂主剤が多量に入り込んで熱硬化
することがなくなって金属粉末同士の接触が良好となる
とともに、前駆体シート内部のエポキシ樹脂主剤と金属
ペースト中の硬化剤との反応により硬化して形成された
エポキシ樹脂により配線導体が絶縁基板に強固に被着さ
れることとなる。According to the method for manufacturing a wiring board of the present invention, the epoxy resin for forming the wiring conductor by bonding the metal powder in the metal paste is printed on the epoxy resin base material in the precursor sheet and the precursor sheet. A large amount of metal is contained in the metal paste because the epoxy resin main material is formed by curing the epoxy resin main material by the reaction with the curing agent in the metal paste, and the epoxy resin main material serving as the epoxy resin forming the wiring conductor is supplied from the precursor sheet. It is not necessary to include the epoxy resin main agent, so that a large amount of the epoxy resin main agent does not enter the contact interface between the metal powders in the metal paste and is hardened by heat. The epoxy resin formed by curing by the reaction between the epoxy resin base material inside the body sheet and the curing agent in the metal paste Wiring conductor is to be firmly adhered to the insulating substrate.
【００１４】[0014]
【発明の実施の形態】以下、本発明を添付の図面に基づ
き詳細に説明する。図１は本発明の配線基板の製造方法
により製造される配線基板を半導体素子収納用パッケー
ジに適用した場合の一例を示す断面図であり、１は絶縁
基体、２は配線導体である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example in which a wiring board manufactured by the method for manufacturing a wiring board of the present invention is applied to a package for accommodating a semiconductor element, wherein 1 is an insulating base, and 2 is a wiring conductor.
【００１５】絶縁基体１は、例えば酸化珪素・酸化アル
ミニウム・窒化アルミニウム・炭化珪素・チタン酸バリ
ウム・ゼオライト等の無機絶縁物粉末をビスマレイミド
トリアジン樹脂により結合した絶縁材料から成る３枚の
絶縁基板１ａ・１ｂ・１ｃから構成されている。また本
例ではこの絶縁基体１の上面中央部に階段状の凹部Ａを
有しており、凹部Ａの底面には半導体素子３が樹脂等の
接着剤を介して接着固定される。The insulating substrate 1 is composed of three insulating substrates 1a made of an insulating material in which inorganic insulating powders such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, and zeolite are bonded by a bismaleimide triazine resin. 1b and 1c. In this example, a stepped recess A is provided at the center of the upper surface of the insulating base 1, and the semiconductor element 3 is bonded and fixed to the bottom of the recess A via an adhesive such as a resin.
【００１６】絶縁基板１ａ・１ｂ・１ｃに含有される無
機絶縁物粉末は、その粒径が0.1 〜100 μｍ程度であ
り、絶縁基板１ａ・１ｂ・１ｃの熱膨張係数を半導体素
子３の熱膨張係数に近いものとする作用を為すとともに
絶縁基板１ａ・１ｂ・１ｃに良好な熱伝導性や耐水性、
あるいは所定の比誘電率等を付与する作用を為す。The inorganic insulating powder contained in the insulating substrates 1a, 1b, 1c has a particle size of about 0.1 to 100 μm, and the coefficient of thermal expansion of the insulating substrates 1a, 1b, 1c is determined by the thermal expansion coefficient of the semiconductor element 3. In addition to the function of making the coefficient close to the coefficient, the insulating substrates 1a, 1b, and 1c have good thermal conductivity and water resistance,
Alternatively, it acts to give a predetermined relative permittivity or the like.
【００１７】一方、絶縁基板１ａ・１ｂ・１ｃに含有さ
れる熱硬化樹脂であるビスマレイミドトリアジン樹脂
は、無機絶縁粉末同士を結合して絶縁基板１ａ・１ｂ・
１ｃおよび絶縁基体１を所定の形状に保持する作用を為
す。On the other hand, the bismaleimide triazine resin, which is a thermosetting resin contained in the insulating substrates 1a, 1b, and 1c, binds the inorganic insulating powder to each other to form the insulating substrates 1a, 1b, and 1c.
1c and the insulating base 1 are held in a predetermined shape.
【００１８】このように絶縁基体１は無機絶縁物粉末を
靭性に優れるビスマレイミドトリアジン樹脂により結合
して成る絶縁基板１ａ・１ｂ・１ｃにより構成されるこ
とから、配線基板同士が衝突した際等にも絶縁基体１に
欠けや割れ・クラック等が発生することはない。As described above, the insulating substrate 1 is constituted by the insulating substrates 1a, 1b, and 1c formed by binding the inorganic insulating powder with a bismaleimide triazine resin having excellent toughness. Also, chipping, cracking, cracking, etc., do not occur in the insulating substrate 1.
【００１９】また、絶縁基板１ａ・１ｂ・１ｃは、その
中に含有される無機絶縁物粉末の含有量が60重量％未満
であると絶縁基体１の熱膨張係数が半導体素子３の熱膨
張係数と比較して極めて大きなものとなり、半導体素子
３が作動時に発生する熱が半導体素子３と絶縁基体１と
に印加されると両者の熱膨張係数の相違に起因して大き
な熱応力が発生し、半導体素子３に絶縁基体１からの剥
離や割れを発生させやすい傾向にある。他方、無機絶縁
物粉末の含有量が95重量％を超えると無機絶縁物粉末を
ビスマレイミドトリアジン樹脂で強固に結合することが
困難となる傾向にある。従って、絶縁基板１ａ・１ｂ・
１ｃ中に含有される無機絶縁物粉末の含有量は60〜95重
量％の範囲が好ましい。When the content of the inorganic insulating powder contained in the insulating substrates 1a, 1b, and 1c is less than 60% by weight, the thermal expansion coefficient of the insulating base 1 becomes lower than that of the semiconductor element 3. When heat generated during operation of the semiconductor element 3 is applied to the semiconductor element 3 and the insulating base 1, a large thermal stress is generated due to a difference in the coefficient of thermal expansion between the two. There is a tendency for the semiconductor element 3 to easily peel off or crack from the insulating substrate 1. On the other hand, if the content of the inorganic insulating powder exceeds 95% by weight, it tends to be difficult to firmly bond the inorganic insulating powder with the bismaleimide triazine resin. Therefore, the insulating substrates 1a, 1b,
The content of the inorganic insulating powder contained in 1c is preferably in the range of 60 to 95% by weight.
【００２０】また絶縁基体１には、その凹部Ａ周辺の絶
縁基板１ｂ上面から絶縁基板１ｂ・１ｃを貫通して絶縁
基板１ｃ下面に導出する、例えば銅・銀・金・表面が銀
で被覆された銅等の金属粉末をエポキシ樹脂により結合
した多数の配線導体２が配設されている。Further, the insulating base 1 is penetrated from the upper surface of the insulating substrate 1b around the recess A to the lower surface of the insulating substrate 1c through the insulating substrates 1b and 1c. For example, copper, silver, gold, and the surface are coated with silver. A large number of wiring conductors 2 are provided in which metal powder such as copper is bonded by an epoxy resin.
【００２１】配線導体２は、配線基板に搭載し半導体素
子収納用パッケージ内部に収容する半導体素子３を外部
電気回路に電気的に接続する作用を為し、その凹部Ａ周
辺の部位には半導体素子３の各電極がボンディングワイ
ヤ４を介して電気的に接続され、またその絶縁基体１下
面に導出する部位は外部電気回路基板に電気的に接続さ
れる。The wiring conductor 2 serves to electrically connect the semiconductor element 3 mounted on the wiring board and housed in the semiconductor element housing package to an external electric circuit. Each of the electrodes 3 is electrically connected via a bonding wire 4, and a portion of the electrode 3 extending to the lower surface of the insulating base 1 is electrically connected to an external electric circuit board.
【００２２】配線導体２に含有される金属粉末は配線導
体２に導電性を付与する作用を為し、配線導体２におけ
る含有量が70重量％未満では配線導体２の導電性が不十
分となる傾向にあり、他方、配線導体２における含有量
が95重量％を超えると金属粉末をエポキシ樹脂で強固に
結合することが困難となる傾向にある。従って、配線導
体２に含有される金属粉末の含有量は70〜95重量％の範
囲が好ましい。The metal powder contained in the wiring conductor 2 acts to impart conductivity to the wiring conductor 2. When the content in the wiring conductor 2 is less than 70% by weight, the conductivity of the wiring conductor 2 becomes insufficient. On the other hand, if the content in the wiring conductor 2 exceeds 95% by weight, it tends to be difficult to firmly bond the metal powder with an epoxy resin. Therefore, the content of the metal powder contained in the wiring conductor 2 is preferably in the range of 70 to 95% by weight.
【００２３】なお、配線導体２に含有される金属粉末
は、その平均粒径が0.5 μｍ未満であると金属粉末同士
の接触抵抗が増加して配線導体２の電気抵抗が高いもの
となる傾向にあり、他方、50μｍを超えると絶縁基体１
に所定パターンの配線導体２を一般に要求される50〜20
0 μｍの線幅で形成するのが困難となる傾向にある。従
って、配線導体２に含有される金属粉末は、その平均粒
径を0.5 〜50μｍとしておくことが好ましい。When the average particle size of the metal powder contained in the wiring conductor 2 is less than 0.5 μm, the contact resistance between the metal powders increases and the electric resistance of the wiring conductor 2 tends to be high. On the other hand, if it exceeds 50 μm, the insulating substrate 1
The wiring conductor 2 having a predetermined pattern is generally required to be 50 to 20 mm.
It tends to be difficult to form with a line width of 0 μm. Therefore, the metal powder contained in the wiring conductor 2 preferably has an average particle size of 0.5 to 50 μm.
【００２４】また、配線導体２に含有されるエポキシ樹
脂は、金属粉末同士を互いに接触させた状態で結合させ
るとともに配線導体２を絶縁基板１ａ・１ｂ・１ｃに被
着させる作用を為し、例えばビスフェノールＡ型エポキ
シ樹脂・ノボラック型エポキシ樹脂・グリシジルエステ
ル型エポキシ樹脂等のエポキシ樹脂から成る。The epoxy resin contained in the wiring conductor 2 serves to combine the metal powders in contact with each other and to attach the wiring conductor 2 to the insulating substrates 1a, 1b, 1c. It is made of an epoxy resin such as a bisphenol A type epoxy resin, a novolak type epoxy resin and a glycidyl ester type epoxy resin.
【００２５】配線導体２に含有されるエポキシ樹脂は、
配線導体２における含有量が５重量％未満では金属粉末
同士を強固に結合できなくなるとともに配線導体２を絶
縁基板１ａ・１ｂ・１ｃに強固に被着させることが困難
となる傾向にある。他方、配線導体２における含有量が
30重量％を超えると金属粉末同士を十分に接触させるこ
とが困難となり配線導体２の電気抵抗が大きなものとな
る傾向にある。従って、配線導体２に含有されるエポキ
シ樹脂の含有量は５〜30重量％の範囲が好ましい。The epoxy resin contained in the wiring conductor 2 is as follows:
If the content in the wiring conductor 2 is less than 5% by weight, the metal powders cannot be firmly bonded to each other, and it tends to be difficult to firmly adhere the wiring conductor 2 to the insulating substrates 1a, 1b, 1c. On the other hand, the content in the wiring conductor 2 is
If it exceeds 30% by weight, it is difficult to bring the metal powders into sufficient contact with each other, and the electrical resistance of the wiring conductor 2 tends to be large. Therefore, the content of the epoxy resin contained in the wiring conductor 2 is preferably in the range of 5 to 30% by weight.
【００２６】また、配線導体２は、その露出する表面に
ニッケルや金等の耐蝕性に優れかつボンディングワイヤ
４等との接合性に優れる金属をめっき法により１〜20μ
ｍの厚みに被着させておくと、配線導体２が酸化腐食す
ることを有効に防止することができるとともに配線導体
２とボンディングワイヤ４および外部電気回路基板の配
線導体との接続を容易かつ強固に行なうことができる。
従って、配線導体２はその露出する表面にニッケルや金
等の耐蝕性に優れかつボンディングワイヤ４等との接続
性に優れる金属をめっき法により１〜20μｍの厚みに被
着させておくことが好ましい。The exposed surface of the wiring conductor 2 is made of a metal such as nickel or gold having excellent corrosion resistance and excellent bonding property with the bonding wire 4 or the like by 1 to 20 μm by plating.
When it is applied to a thickness of m, it is possible to effectively prevent the wiring conductor 2 from being oxidized and corroded, and to easily and firmly connect the wiring conductor 2 to the bonding wires 4 and the wiring conductor of the external electric circuit board. Can be performed.
Therefore, it is preferable that a metal having excellent corrosion resistance, such as nickel or gold, and excellent in connectivity with the bonding wire 4 or the like be applied to the exposed surface of the wiring conductor 2 to a thickness of 1 to 20 μm by plating. .
【００２７】かくして上述の配線基板によれば、絶縁基
体１の凹部Ａ底面に半導体素子３を接着固定するととも
に半導体素子３の各電極をボンディングワイヤ４を介し
て配線導体２に電気的に接続し、最後に絶縁基体１の上
面に蓋体５を封止材を介して接合させることにより製品
としての半導体装置となる。Thus, according to the above-described wiring board, the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion A of the insulating base 1 and each electrode of the semiconductor element 3 is electrically connected to the wiring conductor 2 via the bonding wire 4. Finally, the lid 5 is joined to the upper surface of the insulating base 1 via a sealing material, thereby obtaining a semiconductor device as a product.
【００２８】次に、上述の配線基板の製造方法について
図２に基づいて説明する。図２（ａ）〜（ｃ）はそれぞ
れ本発明の配線基板の製造方法を説明するための工程毎
の断面図である。Next, a method of manufacturing the above-described wiring board will be described with reference to FIG. FIGS. 2A to 2C are cross-sectional views for explaining steps of the method for manufacturing a wiring board according to the present invention.
【００２９】先ず、図２（ａ）に示すようにビスマレイ
ミドトリアジン樹脂の前駆体に無機絶縁物粉末および加
熱により硬化剤と反応して硬化するエポキシ樹脂主剤を
添加混合して得た３枚の前駆体シート11ａ・11ｂ・11ｃ
を準備する。First, as shown in FIG. 2A, a precursor of a bismaleimide triazine resin was mixed with an inorganic insulating powder and an epoxy resin base material which was cured by reacting with a curing agent by heating. Precursor sheets 11a, 11b, 11c
Prepare
【００３０】前駆体シート11ａ・11ｂ・11ｃは、ビスマ
レイミドトリアジン樹脂の前駆体にビスフェノールＡ型
エポキシ樹脂・ノボラック型エポキシ樹脂・グリシジル
エステル型エポキシ樹脂等のエポキシ樹脂主剤および酸
化珪素・酸化アルミニウム・窒化アルミニウム・炭化珪
素・チタン酸バリウム・ゼオライト等の無機絶縁物粉末
ならびにメチルセルソルブ等の溶剤を添加混合して得た
ペーストを従来周知のドクターブレード法を採用してシ
ート状となすとともに約25〜100 ℃の温度で１〜60分加
熱して、シート内部に含有されるビスマレイミドトリア
ジン樹脂の前駆体を半硬化させることにより製作され
る。The precursor sheets 11a, 11b and 11c are made of a precursor of a bismaleimide triazine resin such as a bisphenol A type epoxy resin, a novolak type epoxy resin, a glycidyl ester type epoxy resin or the like, and a silicon oxide / aluminum oxide / nitride. A paste obtained by adding and mixing an inorganic insulating powder such as aluminum, silicon carbide, barium titanate, and zeolite and a solvent such as methylcellosolve is formed into a sheet by using a conventionally well-known doctor blade method, and is formed into a sheet by about 25 to It is manufactured by heating at a temperature of 100 ° C. for 1 to 60 minutes to semi-cure the precursor of the bismaleimide triazine resin contained in the sheet.
【００３１】前駆体シート11ａ・11ｂ・11ｃに含有され
るエポキシ樹脂主剤は、後述するように、前駆体シート
11ｂ・11ｃに配線導体２となる金属ペースト12を印刷塗
布するとともにこの前駆体シート11ａ・11ｂ・11ｃを積
層して加熱することにより、絶縁基板１ａ・１ｂ・１ｃ
となるとともに絶縁基板１ａ・１ｂ・１ｃに配線導体２
を被着させる際に金属ペースト12中に滲出して金属ペー
スト12に含有される硬化剤と反応して硬化することによ
り配線導体２中に硬化したエポキシ樹脂を形成する作用
を為す。The epoxy resin base contained in the precursor sheets 11a, 11b and 11c is, as described later, a precursor sheet.
By printing and applying a metal paste 12 to be the wiring conductor 2 on the layers 11b and 11c and laminating and heating the precursor sheets 11a, 11b and 11c, the insulating substrates 1a, 1b and 1c are formed.
And wiring conductors 2 on the insulating substrates 1a, 1b and 1c.
When the adhesive is applied, the epoxy resin oozes out into the metal paste 12 and reacts with a hardener contained in the metal paste 12 to be hardened, thereby forming a hardened epoxy resin in the wiring conductor 2.
【００３２】なお、前駆体シート11ａ・11ｂ・11ｃに含
有されるエポキシ樹脂主剤は、ビスマレイミドトリアジ
ン樹脂の前駆体とエポキシ樹脂主剤との合計量に対する
含有量が１重量％未満では後述するように前駆体シート
11ａ・11ｂ・11ｃに配線導体２となる金属ペースト12を
印刷して積層し、これを加熱して配線導体２が被着され
た絶縁基板１ａ・１ｂ・１ｃとなす際に配線基板２中に
エポキシ樹脂が十分に形成されないため、配線導体２を
絶縁基板１ａ・１ｂ・１ｃに強固に結合することが困難
となる傾向にある。他方、10重量％を超えると、絶縁基
板１ａ・１ｂ・１ｃ内に未硬化のエポキシ樹脂主剤が多
量に残存して絶縁基板１ａ・１ｂ・１ｃの強度が低いも
のとなる傾向にある。従って前駆体シート11ａ・11ｂ・
11ｃに含有されるエポキシ樹脂主剤は、ビスマレイミド
トリアジン樹脂の前駆体とエポキシ樹脂主剤との合計量
に対する含有量が１〜10重量％の範囲が好ましい。The epoxy resin main component contained in the precursor sheets 11a, 11b, 11c is less than 1% by weight based on the total amount of the bismaleimide triazine resin precursor and the epoxy resin main component as described later. Precursor sheet
The metal paste 12 to be the wiring conductor 2 is printed and laminated on 11a, 11b, and 11c, and is heated and heated to form the insulating substrates 1a, 1b, and 1c on which the wiring conductor 2 is applied. Since the epoxy resin is not sufficiently formed, it tends to be difficult to firmly couple the wiring conductor 2 to the insulating substrates 1a, 1b, and 1c. On the other hand, if it exceeds 10% by weight, a large amount of uncured epoxy resin remains in the insulating substrates 1a, 1b and 1c, and the strength of the insulating substrates 1a, 1b and 1c tends to be low. Therefore, the precursor sheets 11a, 11b
The epoxy resin main component contained in 11c preferably has a content of 1 to 10% by weight based on the total amount of the precursor of the bismaleimide triazine resin and the epoxy resin main component.
【００３３】次に、図２（ｂ）に示すように、前駆体シ
ート11ａ・11ｂ・11ｃのうち２枚の前駆体シート11ａ・
11ｂに凹部Ａとなる開口Ａ１・Ａ２を、２枚の前駆体シ
ート11ｂ・11ｃに配線導体２を引き回すための通路とな
る貫通孔Ｂ１・Ｂ２を各々形成する。Next, as shown in FIG. 2 (b), two of the precursor sheets 11a, 11b and 11c are used.
Openings A1 and A2 serving as recesses A are formed in the recess 11b, and through holes B1 and B2 serving as passages for routing the wiring conductor 2 are formed in the two precursor sheets 11b and 11c.
【００３４】前駆体シート11ａ・11ｂ・11ｃに形成され
た開口Ａ１・Ａ２および貫通孔Ｂ１・Ｂ２は、前駆体シ
ート11ａ・11ｂ・11ｃに従来周知のパンチング加工法を
施して前駆体シート11ａ・11ｂ・11ｃの各々に所定形状
の孔を穿孔することによって形成される。The openings A1, A2 and the through holes B1, B2 formed in the precursor sheets 11a, 11b, 11c are formed by subjecting the precursor sheets 11a, 11b, 11c to a conventionally known punching method. It is formed by drilling a hole of a predetermined shape in each of 11b and 11c.
【００３５】次に、図２（ｃ）に示すように、前駆体シ
ート11ｂの上面および前駆体シート11ｃの上下面、なら
びに前駆体シート11ｂ・11ｃに形成された貫通孔Ｂ１・
Ｂ２内に配線導体２となる金属ペースト12を従来周知の
スクリーン印刷法および充填法を採用して所定パターン
に印刷塗布および充填する。Next, as shown in FIG. 2C, the upper surface of the precursor sheet 11b, the upper and lower surfaces of the precursor sheet 11c, and the through holes B1.
In B2, a metal paste 12 to be the wiring conductor 2 is printed and applied in a predetermined pattern by using a conventionally known screen printing method and filling method.
【００３６】金属ペースト12は、金属粉末およびエポキ
シ樹脂主剤と反応する硬化剤から成り、例えば粒径が0.
1 〜20μｍ程度の銅等の金属粉末にアミン系硬化剤・イ
ミダゾール系硬化剤・酸無水物系硬化剤等の硬化剤等を
添加混合しペースト状となしたものが使用される。The metal paste 12 is made of a curing agent that reacts with the metal powder and the epoxy resin base material.
A paste obtained by adding and mixing a curing agent such as an amine-based curing agent, an imidazole-based curing agent, or an acid anhydride-based curing agent to a metal powder such as copper of about 1 to 20 μm is used.
【００３７】金属ペースト12に含有される硬化剤は、後
述するように、前駆体シート11ａ・11ｂ・11ｃを加熱し
て絶縁基板１ａ・１ｂ・１ｃとなすとともに、絶縁基板
１ａ・１ｂ・１ｃに配線導体２を被着させる際に前駆体
シート11ａ・11ｂ・11ｃに含有されるエポキシ樹脂主剤
を誘導して金属ペースト12中に滲出させるとともにこの
エポキシ樹脂主剤と反応して配線導体２中に硬化したエ
ポキシ樹脂を形成する作用を為す。As described later, the curing agent contained in the metal paste 12 heats the precursor sheets 11a, 11b, and 11c to form the insulating substrates 1a, 1b, and 1c, and also applies the curing agents to the insulating substrates 1a, 1b, and 1c. When the wiring conductor 2 is applied, the epoxy resin main agent contained in the precursor sheets 11a, 11b, and 11c is induced and exudes into the metal paste 12, and reacts with the epoxy resin main agent to be hardened in the wiring conductor 2. It acts to form a cured epoxy resin.
【００３８】後述するように、配線導体２のエポキシ樹
脂となるエポキシ樹脂主剤は前駆体シート11ａ・11ｂ・
11ｃから供給されることから、配線導体２となる金属ペ
ースト12中にはその分多量のエポキシ樹脂主剤を含有さ
せておく必要がなく、従って金属ペースト12中の金属粉
末同士がその接触界面にエポキシ樹脂となる成分を多量
に介在させることなく良好に接触し、その結果、配線導
体２の電気抵抗を低いものとすることができる。As will be described later, the epoxy resin base material serving as the epoxy resin of the wiring conductor 2 is composed of the precursor sheets 11a, 11b,
Since the metal paste 12 is supplied from the metal paste 11c, the metal paste 12 serving as the wiring conductor 2 does not need to contain a correspondingly large amount of epoxy resin base material. Good contact can be achieved without intervening a large amount of resin components. As a result, the electric resistance of the wiring conductor 2 can be reduced.
【００３９】なお、金属ペースト12に含有される硬化剤
は、金属粉末100 重量部に対して0.05重量部未満であれ
ば、後述するように、前駆体シート11ａ・11ｂ・11ｃを
加熱して絶縁基板１ａ・１ｂ・１ｃとなすとともに絶縁
基体１ａ・１ｂ・１ｃに配線導体２を被着させる際、配
線導体２を絶縁基板１ａ・１ｂ・１ｃに強固に被着させ
るのに十分な量のエポキシ樹脂を配線導体２中に形成す
ることが困難となる傾向にある。他方、10重量部を超え
ると、配線導体２中に未反応の硬化剤が多量に残り、配
線導体２の強度が低いものとなってしまう傾向にある。
従って、金属ペースト12に含有される硬化剤は、金属粉
末100 重量部に対して0.05〜10重量部の範囲としておく
ことが好ましい。If the curing agent contained in the metal paste 12 is less than 0.05 parts by weight based on 100 parts by weight of the metal powder, the precursor sheets 11a, 11b and 11c are heated and insulated as described later. When attaching the wiring conductor 2 to the insulating bases 1a, 1b, 1c while forming the substrates 1a, 1b, 1c, an amount of epoxy sufficient to firmly attach the wiring conductor 2 to the insulating substrates 1a, 1b, 1c. It tends to be difficult to form a resin in the wiring conductor 2. On the other hand, if it exceeds 10 parts by weight, a large amount of unreacted curing agent remains in the wiring conductor 2 and the strength of the wiring conductor 2 tends to be low.
Therefore, the curing agent contained in the metal paste 12 is preferably in the range of 0.05 to 10 parts by weight based on 100 parts by weight of the metal powder.
【００４０】さらに、金属ペースト12に含有される硬化
剤をアミン系の硬化剤とすると、このアミン系硬化剤が
金属ペースト12中の金属粉末表面の酸化膜を除去するこ
とから、配線導体２の電気抵抗を低いものとすることが
できる。従って、金属ペースト12に含有される硬化剤は
アミン系の硬化剤としておくことが好ましい。Further, when the curing agent contained in the metal paste 12 is an amine-based curing agent, the amine-based curing agent removes an oxide film on the surface of the metal powder in the metal paste 12, and thus the wiring conductor 2 The electric resistance can be reduced. Therefore, it is preferable that the curing agent contained in the metal paste 12 be an amine-based curing agent.
【００４１】最後に、前駆体シート11ａ・11ｂ・11ｃを
上下に積層して約150 〜300 ℃の温度および約４〜100
ｋｇｆ／ｃｍ2 の圧力でホットプレスするとともにさら
に必要に応じて150 〜300 ℃の温度で加熱し、前駆体シ
ート11ａ・11ｂ・11ｃに含有されるビスマレイミドトリ
アジン樹脂の前駆体を十分に硬化させて無機絶縁物粉末
を熱硬化したビスマレイミドトリアジン樹脂で結合した
絶縁基板１ａ・１ｂ・１ｃとなすとともに、金属ペース
ト12中の金属粉末を前駆体シート11ａ・11ｂ・11ｃ内部
のエポキシ樹脂主剤と金属ペースト12中の硬化剤との反
応により形成される硬化したエポキシ樹脂で結合して絶
縁基体１ａ・１ｂ・１ｃに配線導体２を被着させること
によって、図１に示すような配線基板が完成する。Finally, the precursor sheets 11a, 11b, and 11c are stacked one on top of the other, at a temperature of about 150 to 300 ° C. and about 4 to 100 ° C.
It is hot-pressed at a pressure of kgf / cm 2 and, if necessary, further heated at a temperature of 150 to 300 ° C. to sufficiently cure the bismaleimide triazine resin precursor contained in the precursor sheets 11a, 11b and 11c. To form an insulating substrate 1a, 1b, 1c in which an inorganic insulating powder is bonded with a bismaleimide triazine resin thermoset, and the metal powder in the metal paste 12 is mixed with an epoxy resin base material and a metal in the precursor sheets 11a, 11b, 11c. By attaching the wiring conductor 2 to the insulating bases 1a, 1b and 1c by bonding with a cured epoxy resin formed by the reaction with the curing agent in the paste 12, the wiring substrate as shown in FIG. 1 is completed. .
【００４２】この場合、前駆体シート11ａ・11ｂ・11ｃ
内部に含まれるエポキシ樹脂主剤が金属ペースト12に含
有される硬化剤に誘導されて、金属粉末が互いに良好に
接触した金属ペースト12中に滲出するとともに硬化剤と
反応して硬化したエポキシ樹脂を形成し、この硬化した
エポキシ樹脂により配線導体２が絶縁基板１ａ・１ｂ・
１ｃに強固に接合される。In this case, the precursor sheets 11a, 11b, 11c
The epoxy resin base contained therein is guided by the curing agent contained in the metal paste 12, and the metal powder leaches into the metal paste 12 in good contact with each other and reacts with the curing agent to form a cured epoxy resin. Then, the wiring conductor 2 is formed of the insulating substrates 1a, 1b,
1c is firmly joined.
【００４３】またこの場合、前駆体シート11ａ・11ｂ・
11ｃおよび金属ペースト12は熱硬化時に収縮することが
ほとんどなく、従って、得られる配線基板に変形や寸法
のばらつきが発生することは皆無であり、半導体素子３
と配線導体２とを正確に接続することが可能となる。In this case, the precursor sheets 11a, 11b,
11c and the metal paste 12 hardly shrink during thermosetting, so that the resulting wiring board is not deformed or has a variation in dimensions.
And the wiring conductor 2 can be accurately connected.
【００４４】なお、本発明は上述の実施の形態の例に限
定されるものではなく、本発明の要旨を逸脱しない範囲
であれば種々の変更は可能である。例えば、上述の実施
の形態の例においては配線導体２となる金属ペースト12
は金属粉末と硬化剤とから成っていたが、金属ペースト
12中における金属粉末同士の接触を大きく阻害しない範
囲であれば、ペーストとしての適当な粘度を得るために
さらに少量の熱可塑性樹脂やエポキシ樹脂主剤を含有し
てもよい。The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in the above-described embodiment, the metal paste 12 serving as the wiring conductor 2 may be used.
Consisted of a metal powder and a hardening agent.
As long as the contact between the metal powders in 12 is not significantly impaired, a small amount of a thermoplastic resin or an epoxy resin base may be further contained in order to obtain a suitable viscosity as a paste.
【００４５】また、上述の実施の形態の例では本発明の
配線基板を半導体素子を収容する半導体素子収納用パッ
ケージに適用した場合を例にとって説明したが、これを
混成集積回路基板等に用いられる配線基板に適用しても
よい。In the above embodiment, the case where the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element has been described as an example, but this is used for a hybrid integrated circuit board or the like. It may be applied to a wiring board.
【００４６】また、上述の実施の形態の例では、配線基
板は３枚の絶縁基板が積層されることにより形成されて
いたが、配線基板は２枚あるいは４枚以上の絶縁基板が
積層されることにより形成されていてもよい。In the above-described embodiment, the wiring board is formed by laminating three insulating substrates. However, the wiring board is formed by laminating two or four or more insulating substrates. May be formed.
【００４７】[0047]
【発明の効果】本発明の配線基板の製造方法によれば、
配線導体のエポキシ樹脂となるエポキシ樹脂主剤は絶縁
基板となる前駆体シートから供給されることから、配線
導体となる金属ペースト中に多量のエポキシ樹脂主剤を
含有させておく必要がなく、従って金属ペースト中の金
属粉末同士が良好に接触し、その結果、金属ペーストが
印刷塗布された前駆体シートを加熱して絶縁基板となす
とともに絶縁基板に配線導体を被着させた場合、配線導
体中の金属粉末同士の接触を良好として配線導体の電気
抵抗を低いものとすることができる。According to the method of manufacturing a wiring board of the present invention,
Since the epoxy resin base material used as the epoxy resin of the wiring conductor is supplied from the precursor sheet serving as the insulating substrate, it is not necessary to include a large amount of the epoxy resin base material in the metal paste serving as the wiring conductor. When the metal powder inside is in good contact with each other, and as a result, the precursor sheet on which the metal paste is printed is heated to form an insulating substrate and the wiring conductor is adhered to the insulating substrate, the metal in the wiring conductor The electrical resistance of the wiring conductor can be reduced by improving the contact between the powders.
【００４８】また本発明の製造方法によれば、前駆体シ
ート内部に含まれるエポキシ樹脂主剤が、金属ペースト
に含有される硬化剤に誘導されて金属粉末同士が互いに
良好に接触した金属ペースト中に滲出するとともに硬化
剤と反応することにより硬化したエポキシ樹脂を形成
し、この硬化したエポキシ樹脂により金属粉末同士が強
固に結合されるとともに配線導体が絶縁基板に強固に被
着される。Further, according to the production method of the present invention, the main epoxy resin contained in the precursor sheet is guided by the curing agent contained in the metal paste so that the metal powder is brought into good contact with each other in the metal paste. The epoxy resin that oozes out and reacts with the hardener forms a hardened epoxy resin, and the hardened epoxy resin firmly bonds the metal powders together and firmly adheres the wiring conductor to the insulating substrate.
【００４９】以上により、本発明によれば、無機絶縁物
粉末を熱硬化性樹脂で結合して成る絶縁基板と金属粉末
を熱硬化性樹脂で結合して成る配線導体とから成る配線
基板について、配線導体中の金属粉末同士の接触を良好
として配線導体の電気抵抗を低いものとするとともに、
金属粉末同士を強固に結合し配線導体を絶縁基板に強固
に被着させることができる配線基板の製造方法を提供す
ることができた。As described above, according to the present invention, there is provided a wiring board comprising an insulating substrate formed by bonding inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding metal powder with a thermosetting resin. While improving the contact between the metal powders in the wiring conductor and reducing the electrical resistance of the wiring conductor,
A method of manufacturing a wiring board capable of firmly bonding metal powders to each other and firmly attaching a wiring conductor to an insulating substrate can be provided.
【図１】本発明の配線基板の製造方法による配線基板を
半導体素子収納用パッケージに適用した例を示す断面図
である。FIG. 1 is a cross-sectional view showing an example in which a wiring board according to a method for manufacturing a wiring board of the present invention is applied to a package for housing a semiconductor element.
【図２】（ａ）〜（ｃ）はそれぞれ図１に示す配線基板
の製造方法を説明するための工程毎の断面図である。2 (a) to 2 (c) are cross-sectional views for respective steps for explaining a method of manufacturing the wiring board shown in FIG. 1;
１・・・・・・絶縁基体 １ａ〜１ｃ・・絶縁基板 ２・・・・・・配線導体 ３・・・・・・半導体素子 11ａ〜11ｃ・・前駆体シート 12・・・・・・金属ペースト DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a-1c ... Insulating substrate 2 ... Wiring conductor 3 ... Semiconductor element 11a-11c ... Precursor sheet 12 ... Metal paste
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０５Ｋ 3/46 Ｈ０５Ｋ 3/46 Ｂ Ｔ Ｈ０１Ｌ 23/12 Ｎ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H05K 3/46 H05K 3/46 BT H01L 23/12 N
Claims (1)
に無機絶縁物粉末および加熱により硬化剤と反応して硬
化するエポキシ樹脂主剤を添加混合して前駆体シートを
準備する工程と、該前駆体シートに、金属粉末および前
記エポキシ樹脂主剤と反応する硬化剤を混合して成る金
属ペーストを所定パターンに印刷する工程と、該金属ペ
ーストが印刷された前駆体シートを加熱して、前記無機
絶縁物粉末を熱硬化したビスマレイミドトリアジン樹脂
で結合して成る絶縁基板に、前記金属ペーストの金属粉
末を前記前駆体シートのエポキシ樹脂主剤と前記金属ペ
ーストの硬化剤とを反応させて硬化させたエポキシ樹脂
で結合して成る配線導体を被着させる工程とを具備する
ことを特徴とする配線基板の製造方法。1. A step of preparing a precursor sheet by adding and mixing an inorganic insulating powder and an epoxy resin base material which is cured by reacting with a curing agent by heating to a precursor of a bismaleimide triazine resin; A step of printing a metal paste formed by mixing a metal powder and a curing agent that reacts with the epoxy resin base material in a predetermined pattern, and heating a precursor sheet on which the metal paste is printed to remove the inorganic insulating powder. The metal powder of the metal paste is bonded to an insulating substrate formed by bonding with a thermosetting bismaleimide triazine resin using an epoxy resin which is cured by reacting the epoxy resin base material of the precursor sheet with the curing agent of the metal paste. Applying a wiring conductor formed by the method described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26240597A JP3398310B2 (en) | 1997-09-26 | 1997-09-26 | Manufacturing method of wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26240597A JP3398310B2 (en) | 1997-09-26 | 1997-09-26 | Manufacturing method of wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11102995A true JPH11102995A (en) | 1999-04-13 |
| JP3398310B2 JP3398310B2 (en) | 2003-04-21 |
Family
ID=17375331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26240597A Expired - Fee Related JP3398310B2 (en) | 1997-09-26 | 1997-09-26 | Manufacturing method of wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3398310B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003048251A1 (en) * | 2001-12-05 | 2003-06-12 | Isola Laminate Systems Corp. | Prepreg and composition of epoxy resin(s), sma copolymers(s) and bis-maleimide triazine resin(s) |
| JP2013115184A (en) * | 2011-11-28 | 2013-06-10 | Kyocera Corp | Manufacturing method of ceramic multilayer substrate |
-
1997
- 1997-09-26 JP JP26240597A patent/JP3398310B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003048251A1 (en) * | 2001-12-05 | 2003-06-12 | Isola Laminate Systems Corp. | Prepreg and composition of epoxy resin(s), sma copolymers(s) and bis-maleimide triazine resin(s) |
| US7521494B2 (en) | 2001-12-05 | 2009-04-21 | Isola Usa Corp. | Epoxy resin, SMA copolymer and bis-maleimidetriazine resin |
| JP2013115184A (en) * | 2011-11-28 | 2013-06-10 | Kyocera Corp | Manufacturing method of ceramic multilayer substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3398310B2 (en) | 2003-04-21 |
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