JPH1096846A - Defroster - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain high transmittance and high stability for requirements of the resistance in a wide range by forming a transparent conductive film having specified film thickness and forming a pattern calculated to obtain the resistance between electrodes corresponding to the required heat generation. SOLUTION: An ITO film 2 having specified film thickness is formed on a transparent glass substrate 1 and a pattern 3 calculated to obtain the resistance between electrodes, corresponding to the required heat generation is formed by wet etching. The slit width after etching is 100μm. Then a metal film 4 to be used as electrodes is formed so as not to touch the etched part and a SiO2 . film 5 is formed to cover the ITO film 2. By properly changing the number of patterns for etching while the ITO film 2 is formed into the same thickness, accuracy in a certain level can be obtd. for the calculated value of the resistance between electrodes. Thus, durability of the pattern is improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、屋内外で使用される監
視用カメラ等のレンズの前面に設置し、デフロスターに
通電することによりデフロスター自身を昇温させ、外気
との温度差によるレンズのクモリ、結露、凍結を防止で
きる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lens mounted on the front of a lens such as a surveillance camera used indoors and outdoors, and energizing the defroster to raise the temperature of the defroster itself. Prevents clouding, condensation and freezing.

【０００２】[0002]

【従来の技術】図３は従来の技術の平面図である。透明
基材１の上に透明導電膜２を形成し、両端に電極用金属
膜３を形成した。図４は図３のＢＢ’の断面図である。
透明導電膜の抵抗値制御は主に膜厚を制御することによ
って行っており、高抵抗値の要求がなされた場合は必然
的に膜厚を薄くする必要があった。膜厚を薄くすること
は、膜厚の制御そのものが困難であるばかりでなく、膜
の安定性に問題が生じ、経時的に変化する問題があっ
た。又、たとえ厚い膜でも、透明導電膜にとって好まし
くない環境では膜の劣化は免れず、更に、透過率が低下
する事も避けられなかった。FIG. 3 is a plan view of a prior art. A transparent conductive film 2 was formed on a transparent substrate 1 and metal films 3 for electrodes were formed on both ends. FIG. 4 is a cross-sectional view of BB ′ in FIG.
The control of the resistance value of the transparent conductive film is mainly performed by controlling the film thickness. When a high resistance value is required, the film thickness has to be necessarily reduced. When the film thickness is reduced, not only is it difficult to control the film thickness itself, but also there is a problem in the stability of the film, and there is a problem that the film thickness changes over time. In addition, even in the case of a thick film, deterioration of the film is inevitable in an environment unfavorable for the transparent conductive film, and further, a decrease in transmittance cannot be avoided.

【０００３】[0003]

【発明が解決しようとする課題】本発明は上記の問題点
を解決するためになされたもので、広範囲にわたる抵抗
値の要求に対して高透過率、高安定性のデフロスターを
提供しようとするものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a high transmittance, high stability defroster for a wide range of demands for a resistance value. It is.

【０００４】[0004]

【課題を解決するための手段】本発明のデフロスター
は、透明基材にＰＶＤ法、又はＣＶＤ法により、安定性
があり又透過率低下を招かない程度のある一定の膜厚の
透明導電膜を形成する。更に、それぞれの発熱量の要求
に応じた電極間抵抗値を得るべく計算されたパターン
を、ウェット方式・ドライ方式のエッチング、マスク成
膜、リフトオフ等にて作成する。エッチング部分に接触
しないように、電極となる金属膜を形成し、透明導電膜
をカバーする様に誘電体膜を形成する。The defroster of the present invention is characterized in that a transparent conductive film having a certain thickness which is stable and does not cause a decrease in transmittance is formed on a transparent substrate by a PVD method or a CVD method. Form. Further, a pattern calculated to obtain an inter-electrode resistance value corresponding to each heat generation requirement is created by wet-type / dry-type etching, mask film formation, lift-off, or the like. A metal film serving as an electrode is formed so as not to come into contact with the etched portion, and a dielectric film is formed so as to cover the transparent conductive film.

【０００５】[0005]

【実施例】図１は、デフロスターの完成品の平面図であ
る。図２は、図１のＡＡ’の断面図である。透明ガラス
基板１にＩＴＯ膜２を膜厚１，０００Å形成し、それぞ
れの発熱量の要求に応じた電極間抵抗値を得るべく計算
されたパターン３を、ウェットエッチングにて作成し
た。エッチングされたスリット幅は、１００ミクロンで
ある。次に、エッチング部分に接触しないように電極と
なる金属膜４を形成し、ＩＴＯ膜２をカバーする様にＳ
ｉＯ２膜５を２，７００Å形成した。FIG. 1 is a plan view of a completed defroster. FIG. 2 is a cross-sectional view taken along AA ′ of FIG. An ITO film 2 was formed on a transparent glass substrate 1 to a thickness of 1,000 .ANG., And a pattern 3 calculated to obtain an inter-electrode resistance value corresponding to each required calorific value was formed by wet etching. The etched slit width is 100 microns. Next, a metal film 4 serving as an electrode is formed so as not to come into contact with the etched portion, and an S film is formed so as to cover the ITO film 2.
An iO2 film 5 was formed at 2,700 °.

【０００６】ＩＴＯ膜１の膜厚は同じままで、エッチン
グを行うパターンの数を、９本、１１本、１３本と変更
することにより、電極間抵抗値でそれぞれ、計算値２，
０００、３，０００、４，０００Ωに対し＋−５％の精
度を得られるようになり、耐久性も向上した。耐湿試験
の結果を表１にまとめた。By changing the number of patterns to be etched to 9, 11, and 13 while keeping the thickness of the ITO film 1 the same, the resistance between the electrodes is calculated as 2,
Accuracy of + -5% can be obtained for 000, 3,000, and 4,000 Ω, and durability has been improved. Table 1 summarizes the results of the moisture resistance test.

【０００７】[0007]

【表１】 [Table 1]

【図面の簡単な説明】[Brief description of the drawings]

【図１】デフロスター完成品の平面図であるFIG. 1 is a plan view of a completed defroster product.

【図２】図１ＡＡ’の断面図であるFIG. 2 is a cross-sectional view of FIG. 1AA ′

【図３】従来の技術の平面図であるFIG. 3 is a plan view of a conventional technique.

【図４】図３ＢＢ’の断面図であるFIG. 4 is a sectional view of FIG. 3BB ';

【符号の説明】 １ 透明ガラス基板 ２ ＩＴＯ膜 ３ エッチングされたパターン ４ 金属電極膜 ５ ＳｉＯ２膜[Description of Signs] 1 Transparent glass substrate 2 ITO film 3 Etched pattern 4 Metal electrode film 5 SiO2 film

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 透明基材にＰＶＤ法、又はＣＶＤ法によ
りＩＴＯ、ＳｎＯ２等の透明導電膜を形成し、電極間
で、希望する抵抗値が得られるようにウエット方式・ド
ライ方式のエッチング、マスク成膜、リフトオフ等によ
りパターニングされたデフロスター。1. A transparent conductive film such as ITO or SnO2 is formed on a transparent substrate by a PVD method or a CVD method, and a wet type / dry type etching and masking method is used to obtain a desired resistance value between electrodes. Defroster patterned by film formation, lift-off, etc. 【請求項２】 パターニングされた透明導電膜上にＰＶ
Ｄ法、又はＣＶＤ法により誘電体膜を形成し、透明導電
膜の保護と全体の透過率を向上したデフロスター。2. A photovoltaic device on a patterned transparent conductive film.
A defroster in which a dielectric film is formed by the D method or the CVD method to protect the transparent conductive film and improve the overall transmittance.