JPH1092970A - Substrate module - Google Patents

Substrate module

Info

Publication number
JPH1092970A
JPH1092970A JP8247797A JP24779796A JPH1092970A JP H1092970 A JPH1092970 A JP H1092970A JP 8247797 A JP8247797 A JP 8247797A JP 24779796 A JP24779796 A JP 24779796A JP H1092970 A JPH1092970 A JP H1092970A
Authority
JP
Japan
Prior art keywords
substrate
resin
semiconductor package
resin injection
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8247797A
Other languages
Japanese (ja)
Inventor
Itsukou Murakami
壱皇 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP8247797A priority Critical patent/JPH1092970A/en
Publication of JPH1092970A publication Critical patent/JPH1092970A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/111Pads for surface mounting, e.g. lay-out
    • H05K1/112Pads for surface mounting, e.g. lay-out directly combined with via connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/284Applying non-metallic protective coatings for encapsulating mounted components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce a required substrate area for resin seal by mounting a semiconductor package in a recess of a substrate, by forming a resin injection part continuously from the periphery of the recess, and by charging a resin in the recess through the resin injection parts. SOLUTION: For mounting a semiconductor package 2 on a substrate 1, electrodes of the package 2 and pads 4 at the bottom face of a recess 12 are electrically connected through solder pads 3 to mount the package 2 on the substrate 1. An epoxy resin 6, etc., is injected and charged in the recess 12 through a resin injection part 9 to seal connections of the substrate 1 and package 2, using an adequate dispenser. Thus it is possible to reduce required substrate area for resin real, compared with that using a dam frame.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、CSP(Chip Sca
le Package)やベアチップなどを実装する基板モジュー
ルに関する。
The present invention relates to a CSP (Chip Sca)
le Package) and a board module on which bare chips are mounted.

【0002】[0002]

【従来の技術】従来から、CSPやベアチップのような
半導体パッケージをフリップチップボンディングなどに
より基板に直接接続して基板モジュールを形成する場
合、その接続部を保護するために樹脂による封止を行う
ことが一般的である。
2. Description of the Related Art Conventionally, when a semiconductor package such as a CSP or a bare chip is directly connected to a substrate by flip chip bonding or the like to form a substrate module, sealing with a resin is performed to protect the connection portion. Is common.

【0003】ここで、封止の際には基板上への不要な樹
脂の流出を防ぐ必要がある。そのため、例えば図6の断
面図に示されるように、基板101上のパッド104と
半導体パッケージ102のパッドとを接続するはんだボ
ール103による接続部を樹脂107で封止する場合に
は、予め基板101上に接続部の周囲、具体的には半導
体パッケージ102の周囲にダムフレーム106と呼ば
れる囲いを設けて樹脂107を流し込むようにしてい
た。
Here, at the time of sealing, it is necessary to prevent unnecessary outflow of resin onto the substrate. For this reason, as shown in the cross-sectional view of FIG. 6, for example, when the connection portion of the solder ball 103 connecting the pad 104 on the substrate 101 and the pad of the semiconductor package 102 is sealed with the resin 107, the substrate 101 is An enclosure called a dam frame 106 is provided around the connection portion, specifically, around the semiconductor package 102, so that the resin 107 is poured.

【0004】[0004]

【発明が解決しようとする課題】上述したように、従来
は樹脂による封止を行う場合には半導体パッケージの周
囲を囲むダムフレームを基板上に設けていたため、この
ダムフレームを設置した分だけ基板の面積が増加してし
まうという問題があった。本発明は、樹脂封止に必要な
面積の少ない基板モジュールを提供することを目的とす
る。
As described above, conventionally, when sealing with a resin, a dam frame surrounding the periphery of a semiconductor package is provided on a substrate. However, there is a problem that the area increases. An object of the present invention is to provide a board module having a small area required for resin sealing.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
本発明は、半導体パッケージと、半導体パッケージが実
装される凹部を有する基板と、凹部の周辺から連続して
形成される樹脂注入部と、樹脂注入部を介して凹部内に
充填される樹脂とを具備する。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a semiconductor package, a substrate having a concave portion on which the semiconductor package is mounted, a resin injection portion formed continuously from the periphery of the concave portion, Resin filled in the recess through the resin injection portion.

【0006】このような基板モジュールでは、基板の凹
部に半導体パッケージが埋め込まれるように実装され、
この凹部内に樹脂を充填することにより封止が行われ
る。この場合、樹脂封止に必要な基板面積は、樹脂注入
部のみで従来のようにダムフレームを設ける場合に比べ
て大幅に少なくなる。
In such a board module, a semiconductor package is mounted so as to be embedded in a concave portion of the board.
Sealing is performed by filling the concave portion with a resin. In this case, the substrate area required for resin sealing is significantly reduced as compared with a conventional case where a dam frame is provided only at the resin injection portion.

【0007】凹部に半導体パッケージが埋め込まれるよ
うに実装されることにより、基板からの半導体パッケー
ジの抜け落ち等が少なくなって製造時の歩留りが向上す
る。また、基板モジュール自体も薄くなって高密度実装
が可能となる。
By mounting the semiconductor package so as to be embedded in the recess, the semiconductor package is less likely to fall off from the substrate, and the yield in manufacturing is improved. Further, the thickness of the substrate module itself is reduced, and high-density mounting is enabled.

【0008】さらに、樹脂注入部を介して樹脂を注入し
ているので、凹部に直接樹脂を注入する場合に比べて樹
脂が凹部内に効果的に拡散して封止を確実に行うことが
できる。なお、この樹脂注入部を複数個設けるようにす
れば、例えば各樹脂注入部からの樹脂の注入量等を制御
してさらに効果的に樹脂の充填を行うことができる。
Further, since the resin is injected through the resin injection portion, the resin can be more effectively diffused into the recess and the sealing can be reliably performed as compared with the case where the resin is directly injected into the recess. . If a plurality of resin injection portions are provided, for example, the amount of resin injected from each resin injection portion can be controlled to more effectively fill the resin.

【0009】ここで、本発明では半導体パッケージの底
面には複数の電極が設けられ、凹部の底面部には半導体
パッケージの電極にそれぞれ電気的に接続されるパッド
が設けられ、この複数のパッドは基板の信号層に電気的
に接続されるように構成することができる。この場合、
信号層は基板の内層に設けられて、パッドがスルーホー
ルを介して信号層に電気的に接続されるようにすること
が望ましい。また、本発明では半導体パッケージの底面
に複数の電極が設けられ、凹部の底面には電極にそれぞ
れ電気的に接続する信号層が露出するようにしてもよ
い。
Here, in the present invention, a plurality of electrodes are provided on the bottom surface of the semiconductor package, and pads electrically connected to the electrodes of the semiconductor package are provided on the bottom surface of the concave portion, respectively. It can be configured to be electrically connected to the signal layer of the substrate. in this case,
Preferably, the signal layer is provided on an inner layer of the substrate so that the pad is electrically connected to the signal layer via a through hole. In the present invention, a plurality of electrodes may be provided on the bottom surface of the semiconductor package, and signal layers electrically connected to the electrodes may be exposed on the bottom surface of the concave portion.

【0010】[0010]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

(第1の実施形態)図1は、本発明の第1の実施形態に
係る基板モジュールの構成を示す図で、(a)はこの基
板モジュールの実装構造を示す断面図、(b)はこの基
板モジュールを半導体パッケージ(半導体チップ)の実
装側から見た図である。
(First Embodiment) FIGS. 1A and 1B are diagrams showing a configuration of a board module according to a first embodiment of the present invention, wherein FIG. 1A is a cross-sectional view showing a mounting structure of the board module, and FIG. FIG. 3 is a view of the substrate module as viewed from a mounting side of a semiconductor package (semiconductor chip).

【0011】基板1は、ガラス・エポキシ樹脂などの絶
縁性基材で形成される。この基板1には半導体パッケー
ジ2が実装される凹部12が設けられている。凹部12
は、半導体パッケージ2が実装されたときその半導体パ
ッケージ2の各周辺と自身の各周辺との間隔(以下、隙
間と称する)が1mm程度になるように形成されること
が望ましい。
The substrate 1 is formed of an insulating substrate such as a glass epoxy resin. The substrate 1 is provided with a concave portion 12 in which the semiconductor package 2 is mounted. Recess 12
Is preferably formed such that when the semiconductor package 2 is mounted, an interval (hereinafter, referred to as a gap) between each periphery of the semiconductor package 2 and each periphery thereof is about 1 mm.

【0012】また、凹部12は半導体パッケージ2の厚
さと同程度の深さを有することが望ましい。ただし、基
板1の強度低下を防ぐために基板1の厚さの半分以上の
深さにはしないようにすることが好ましい。例えば、基
板1の厚さを1.28mm、半導体パッケージ2の厚さ
を0.6mmとすると、凹部12の厚さは0.6mm前
後にする。
It is desirable that the recess 12 has a depth substantially equal to the thickness of the semiconductor package 2. However, in order to prevent the strength of the substrate 1 from decreasing, it is preferable that the depth is not more than half the thickness of the substrate 1. For example, assuming that the thickness of the substrate 1 is 1.28 mm and the thickness of the semiconductor package 2 is 0.6 mm, the thickness of the recess 12 is about 0.6 mm.

【0013】樹脂注入部9は、基板1において凹部12
の周辺から連続するように形成されており、この樹脂注
入部9を介して樹脂6の注入が行われる。この樹脂注入
部9は、注入された樹脂6が基板1と半導体パッケージ
2との各接続部に効果的に拡散するような位置に設けら
れ、その形状は樹脂6の性質、量および樹脂6の注入に
用いるディスペンサの口径等に応じて定められる。
The resin injection portion 9 is provided in the substrate 1
The resin 6 is injected through the resin injection portion 9. The resin injection portion 9 is provided at a position where the injected resin 6 is effectively diffused into each connection portion between the substrate 1 and the semiconductor package 2. It is determined according to the diameter of the dispenser used for injection.

【0014】図1においては、樹脂注入部9は(a)の
ように凹部12と同じ深さで、(b)のように基板1の
表面から見て四角形状の凹部として形成されている。樹
脂注入部9を基板1の表面から見て四角形状に形成する
場合、その縦横の長さを上述した隙間以上の長さにする
と効果的に樹脂6の充填を行うことができる。例えば、
隙間が1mmである場合は、樹脂注入部9を縦横5mm
程度に形成する。
In FIG. 1, the resin injection portion 9 is formed as a concave portion having the same depth as the concave portion 12 as shown in FIG. 1A and a rectangular shape as viewed from the surface of the substrate 1 as shown in FIG. When the resin injection portion 9 is formed in a rectangular shape when viewed from the surface of the substrate 1, the resin 6 can be effectively filled by setting the length and width of the resin injection portion 9 to be equal to or greater than the above-described gap. For example,
When the gap is 1 mm, the resin injection part 9 is
Formed to the extent.

【0015】凹部12の底面部には、半導体パッケージ
2の底面に設けられている図示されていない複数の電極
に対応させて複数のパッド4が形成されている。これら
複数のパッド4は、それぞれスルーホール5を介して基
板1の裏面の複数のパッド7に電気的に接続されてい
る。基板1の裏面には複数のパッド7および所定の配線
パターン8による信号層が形成されている。
A plurality of pads 4 are formed on the bottom surface of the recess 12 so as to correspond to a plurality of electrodes (not shown) provided on the bottom surface of the semiconductor package 2. The plurality of pads 4 are electrically connected to the plurality of pads 7 on the back surface of the substrate 1 through the through holes 5, respectively. A signal layer including a plurality of pads 7 and a predetermined wiring pattern 8 is formed on the back surface of the substrate 1.

【0016】半導体パッケージ2は、マイクロプロセッ
サやメモリなど所定の機能を有するCSPやベアチップ
などであり、底面には図示されていない複数の電極が設
けられている。
The semiconductor package 2 is a CSP or a bare chip having a predetermined function such as a microprocessor or a memory, and has a plurality of electrodes (not shown) provided on a bottom surface.

【0017】基板1に半導体パッケージ2を実装する場
合、半導体パッケージ2の複数の電極と凹部12の底面
部の複数のパッド4とをはんだボール3を介してそれぞ
れ電気的に接続する。
When the semiconductor package 2 is mounted on the substrate 1, a plurality of electrodes of the semiconductor package 2 are electrically connected to a plurality of pads 4 on the bottom of the recess 12 via the solder balls 3.

【0018】具体的には、半導体パッケージ2の各電極
にはんだボール3を形成し、凹部12における各パッド
4にフラックスを塗り、対応する各はんだボール3と各
パッド4を接触させてリフローで加熱することで接続を
行う。
Specifically, solder balls 3 are formed on the respective electrodes of the semiconductor package 2, a flux is applied to the respective pads 4 in the concave portions 12, the corresponding respective solder balls 3 and the respective pads 4 are brought into contact with each other, and heated by reflow. To make a connection.

【0019】このように基板1に半導体パッケージ2を
実装した後、適当なディスペンサを用いてエポキシなど
の樹脂6を樹脂注入部9を介して注入し、凹部12内に
樹脂6を充填させることにより基板1と半導体パッケー
ジ2との接続部を封止する。
After the semiconductor package 2 is mounted on the substrate 1 as described above, a resin 6 such as epoxy is injected through a resin injection portion 9 using an appropriate dispenser, and the resin 6 is filled in the concave portion 12. The connection between the substrate 1 and the semiconductor package 2 is sealed.

【0020】以上述べたように、この基板モジュールは
基板1に凹部12を形成しておき、この凹部12に半導
体パッケージ2を実装したあと樹脂6を充填することに
より封止を行う。従って、樹脂封止に必要とされる基板
1の面積は、樹脂注入部9のみで従来のようにダムフレ
ームを用いる場合に比べてはるかに少なくなる。
As described above, in this substrate module, the concave portion 12 is formed in the substrate 1, the semiconductor package 2 is mounted in the concave portion 12, and then the resin 6 is filled to perform sealing. Therefore, the area of the substrate 1 required for resin sealing is much smaller than that of a conventional case using a dam frame with only the resin injection portion 9.

【0021】また、半導体パッケージ2が凹部12に埋
め込まれるように実装されるので、外部からの衝撃に対
して確実に保護され、保護基板1からの半導体パッケー
ジ2の抜け落ち等が少なくなって製造時の歩留りが向上
する。また、半導体パッケージ2が埋め込めれた分だけ
基板モジュール自体も薄くなって高密度実装が可能にな
るため、この基板モジュールを搭載する電子機器等を小
型化することができるようになる。
Further, since the semiconductor package 2 is mounted so as to be embedded in the concave portion 12, the semiconductor package 2 is reliably protected against external impact, and the semiconductor package 2 is less likely to fall out of the protective substrate 1 and is manufactured. Yield is improved. Further, the substrate module itself is thinned by the amount in which the semiconductor package 2 is embedded, and high-density mounting can be performed. Therefore, the size of an electronic device or the like on which the substrate module is mounted can be reduced.

【0022】さらに、樹脂注入部9を介して樹脂6を注
入しているため、樹脂6が凹部12内に効果的に拡散
し、接続部の隅々まで樹脂6が行き渡るので封止を確実
に行うことができる。
Further, since the resin 6 is injected through the resin injection portion 9, the resin 6 is effectively diffused into the concave portion 12, and the resin 6 spreads to every corner of the connection portion, so that the sealing is reliably performed. It can be carried out.

【0023】ところで、上記実施形態では樹脂注入部9
が一つの場合について説明したが、凹部12の周辺に複
数個設けるようにしてもよい。図2に示されるように、
凹部12の周辺を構成する4辺に樹脂注入部10a〜1
0dを設けた場合、基板1と半導体パッケージ2との接
続部に応じて各樹脂注入部10a〜10dの樹脂注入量
等を制御して、より効果的に樹脂6の充填を行うことが
できる。また、樹脂注入部9の形状および設置位置は任
意であり、例えば図3に示されるように基板1の表面か
ら見て円形状の樹脂注入部11a〜11dを凹部12の
周辺の頂点にそれぞれ設けるようにしてもよい。この
他、樹脂注入部9の設置位置、形状および数は必要に応
じて適当に変えることができる。なお、図2および図3
はそれぞれ基板モジュールを半導体パッケージの実装側
から見た図である。
In the above embodiment, the resin injection portion 9
Has been described, but a plurality may be provided around the recess 12. As shown in FIG.
The resin injection portions 10a to 10a-1
When 0d is provided, the amount of resin injected into each of the resin injection sections 10a to 10d can be controlled in accordance with the connection between the substrate 1 and the semiconductor package 2, so that the resin 6 can be more effectively filled. The shape and installation position of the resin injection portion 9 are arbitrary. For example, as shown in FIG. 3, circular resin injection portions 11a to 11d as viewed from the surface of the substrate 1 are provided at vertexes around the concave portion 12, respectively. You may do so. In addition, the installation position, the shape, and the number of the resin injection section 9 can be appropriately changed as needed. 2 and 3
FIG. 3 is a view of each of the board modules as viewed from the mounting side of the semiconductor package.

【0024】次に、本発明の他の実施形態について説明
するが、以下では図1と相対応する部分に同一符号を付
して、第1の実施形態との相違点を中心として説明す
る。 (第2の実施形態)図4は、本発明の第2の実施形態に
係る基板モジュールの実装構造を示す図である。本実施
形態は基板の内層に信号層を形成するようにしたもので
ある。
Next, another embodiment of the present invention will be described. In the following, portions corresponding to those in FIG. 1 are denoted by the same reference numerals, and the description will focus on differences from the first embodiment. (Second Embodiment) FIG. 4 is a view showing a mounting structure of a board module according to a second embodiment of the present invention. In this embodiment, a signal layer is formed on an inner layer of a substrate.

【0025】具体的には、絶縁性材料で形成された適当
な厚さを有する基板本体31の表面にパッド7および配
線パターン8による信号層を形成し、この基板本体31
上に適当な絶縁性材料で絶縁層32を設けることにより
内層に信号層を有する基板を形成する。
More specifically, a signal layer including pads 7 and wiring patterns 8 is formed on the surface of a substrate body 31 having an appropriate thickness and formed of an insulating material.
By providing the insulating layer 32 with an appropriate insulating material thereon, a substrate having a signal layer as an inner layer is formed.

【0026】絶縁層32には、第1の実施形態と同様の
凹部12およびパッド4が設けられており、この凹部1
2の底面部におけるパッド4と基板の内層におけるパッ
ド7とがスルーホール5を介して電気的に接続される。
The insulating layer 32 is provided with the same concave portions 12 and pads 4 as in the first embodiment.
The pad 4 on the bottom surface of the substrate 2 and the pad 7 on the inner layer of the substrate are electrically connected through the through hole 5.

【0027】このように半導体パッケージ2を凹部12
に実装した後は、第1の実施形態と同様に樹脂注入部9
を介して樹脂6を凹部12内に充填することで接続部の
封止を行う。
As described above, the semiconductor package 2 is
After that, the resin injection portion 9 is mounted similarly to the first embodiment.
The connection portion is sealed by filling the concave portion 12 with the resin 6 via.

【0028】このようにして、信号層が基板の内層に設
けられた基板モジュールが得られる。この場合、信号層
が設けられた基板本体31上に絶縁層32をさらに設け
ることにより凹部12を形成しているので、第1の実施
形態のように基板に直接凹部12を形成する場合に比べ
て製造が容易である。
Thus, a substrate module having the signal layer provided in the inner layer of the substrate is obtained. In this case, since the concave portion 12 is formed by further providing the insulating layer 32 on the substrate main body 31 provided with the signal layer, compared with the case where the concave portion 12 is formed directly on the substrate as in the first embodiment. And easy to manufacture.

【0029】(第3の実施形態)図5は、本発明の第3
の実施形態に係る基板モジュールの構成を示す図で、
(a)はこの基板モジュールの実装構造を示す断面図、
(b)はこの基板モジュールを半導体パッケージの実装
側から見た図である。
(Third Embodiment) FIG. 5 shows a third embodiment of the present invention.
FIG. 3 is a diagram illustrating a configuration of a substrate module according to the embodiment.
(A) is a sectional view showing a mounting structure of the board module,
FIG. 2B is a view of the substrate module as viewed from a mounting side of the semiconductor package.

【0030】本実施形態は、信号層が凹部の底面に露出
するようにしたものである。具体的には、まず図1で示
した基板1よりも薄い、例えば0.6mm程度の厚さの
基板本体21の表面に配線パターン23および複数のパ
ッド24を設けて信号層を形成する。
In this embodiment, the signal layer is exposed at the bottom of the concave portion. Specifically, first, a signal layer is formed by providing a wiring pattern 23 and a plurality of pads 24 on the surface of a substrate body 21 which is thinner than the substrate 1 shown in FIG. 1, for example, about 0.6 mm thick.

【0031】次に、この基板本体21の上に適当な絶縁
性材料によって絶縁層22を設け、これら基板本体21
および絶縁層22によって第1の実施形態と同様の形状
を有する凹部25および樹脂注入部26が形成されるよ
うにする。
Next, an insulating layer 22 made of an appropriate insulating material is provided on the substrate main body 21.
In addition, the concave portion 25 and the resin injection portion 26 having the same shape as in the first embodiment are formed by the insulating layer 22.

【0032】なお、本実施形態の基板モジュールの厚さ
は、基板本体21と絶縁層22とを合わせた厚さである
ことから、絶縁層22は基板本体21と合わせて十分な
強度が確保される程度の厚さ、例えば0.6mm程度に
する。
Since the thickness of the substrate module of the present embodiment is the thickness of the substrate main body 21 and the insulating layer 22, the insulating layer 22 has sufficient strength in combination with the substrate main body 21. Thickness, for example, about 0.6 mm.

【0033】以下は、第1の実施形態と同様に半導体パ
ッケージ2の各電極と基板本体21上の各パッド24と
を複数のはんだボール3で接続することにより半導体パ
ッケージ2を実装し、樹脂注入部26を介して樹脂6を
注入して接続部の封止を行う。
Hereinafter, the semiconductor package 2 is mounted by connecting each electrode of the semiconductor package 2 and each pad 24 on the substrate body 21 with a plurality of solder balls 3 in the same manner as in the first embodiment. The connection portion is sealed by injecting the resin 6 through the portion 26.

【0034】このようにして、凹部25の底面に信号層
が露出した基板モジュールが得られる。この場合、第1
および第2の実施形態のように基板にスルーホールを設
ける必要がないので構造が簡単になり、製造コストを低
下させることができる。
In this way, a substrate module in which the signal layer is exposed at the bottom of the recess 25 is obtained. In this case, the first
Since there is no need to provide a through hole in the substrate as in the second embodiment, the structure is simplified, and the manufacturing cost can be reduced.

【0035】[0035]

【発明の効果】以上説明したように本発明によれば、凹
部に樹脂を充填することで封止が行われるので、従来の
ようにダムフレームを用いる場合に比べて樹脂封止に必
要とされる基板面積が少なくなる。
As described above, according to the present invention, the sealing is performed by filling the concave portion with the resin, so that the resin sealing is required as compared with the conventional case using the dam frame. Substrate area is reduced.

【0036】また、凹部に半導体パッケージが埋め込ま
れるように実装されるため、高密度実装が可能になると
共に、基板からの半導体パッケージの抜け落ち等が少な
くなって製造時の歩留りが向上する。さらに、樹脂注入
部を介して樹脂を充填しているので、樹脂が凹部に効果
的に拡散して封止を確実に行うことができる。
Further, since the semiconductor package is mounted so as to be embedded in the concave portion, high-density mounting is possible, and at the same time, the semiconductor package is less likely to fall off from the substrate, thereby improving the production yield. Further, since the resin is filled through the resin injection portion, the resin can be effectively diffused into the concave portions and the sealing can be reliably performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施形態に係る基板モジュール
の構成を示す図
FIG. 1 is a diagram showing a configuration of a board module according to a first embodiment of the present invention.

【図2】図1中の樹脂注入部の別の例を示す図FIG. 2 is a diagram showing another example of the resin injection unit in FIG.

【図3】図1中の樹脂注入部のさらに別の例を示す図FIG. 3 is a diagram showing still another example of the resin injection unit in FIG.

【図4】本発明の第2の実施形態に係る基板モジュール
の実装構造を示す断面図
FIG. 4 is a cross-sectional view illustrating a mounting structure of a board module according to a second embodiment of the present invention.

【図5】本発明の第3の実施形態に係る基板モジュール
の構成を示す図
FIG. 5 is a diagram showing a configuration of a board module according to a third embodiment of the present invention.

【図6】従来の基板モジュールの構成を示す図FIG. 6 is a diagram showing a configuration of a conventional board module.

【符号の説明】[Explanation of symbols]

1…基板 2…半導体パッケージ 3…はんだボール 4…パッド 5…スルーホール 6…樹脂 7…パッド 8…配線パターン 9…樹脂注入部 10a〜10d…樹脂注入部 11a〜11d…樹脂注入部 12…凹部 21…基板本体 22…絶縁層 23…配線パターン 24…パッド 25…凹部 26…樹脂注入部 31…基板本体 32…絶縁層 101…基板 102…半導体パッケージ 103…はんだボール 104…パッド 105…配線パターン 106…ダムフレーム 107…樹脂 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Semiconductor package 3 ... Solder ball 4 ... Pad 5 ... Through hole 6 ... Resin 7 ... Pad 8 ... Wiring pattern 9 ... Resin injection part 10a-10d ... Resin injection part 11a-11d ... Resin injection part 12 ... Concave part DESCRIPTION OF SYMBOLS 21 ... Board main body 22 ... Insulating layer 23 ... Wiring pattern 24 ... Pad 25 ... Concave part 26 ... Resin injection part 31 ... Board main body 32 ... Insulating layer 101 ... Substrate 102 ... Semiconductor package 103 ... Solder ball 104 ... Pad 105 ... Wiring pattern 106 ... dam frame 107 ... resin

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】半導体パッケージと、 前記半導体パッケージが実装される凹部を有する基板
と、 前記凹部の周辺から連続して形成される樹脂注入部と、 前記樹脂注入部を介して前記凹部内に充填される樹脂と
を具備することを特徴とする基板モジュール。
1. A semiconductor package, a substrate having a concave portion on which the semiconductor package is mounted, a resin injection portion formed continuously from the periphery of the concave portion, and filling the concave portion through the resin injection portion. And a resin to be used.
【請求項2】前記樹脂注入部は複数個設けられることを
特徴とする請求項1記載の基板モジュール。
2. The substrate module according to claim 1, wherein a plurality of the resin injection portions are provided.
【請求項3】前記半導体パッケージの底面には複数の電
極が設けられ、前記凹部の底面部には前記半導体パッケ
ージの電極にそれぞれ電気的に接続されるパッドが設け
られ、この複数のパッドは前記基板の信号層に電気的に
接続されることを特徴とする請求項2記載の基板モジュ
ール。
3. A plurality of electrodes are provided on a bottom surface of the semiconductor package, and pads electrically connected to electrodes of the semiconductor package are provided on a bottom surface of the recess, respectively. 3. The board module according to claim 2, wherein the board module is electrically connected to a signal layer of the board.
【請求項4】前記信号層は前記基板の内層に設けられ、
前記パッドはスルーホールを介して前記信号層に電気的
に接続されることを特徴とする請求項3記載の基板モジ
ュール。
4. The signal layer is provided on an inner layer of the substrate,
The board module according to claim 3, wherein the pad is electrically connected to the signal layer via a through hole.
【請求項5】前記半導体パッケージの底面には複数の電
極が設けられ、前記凹部の底面には前記電極にそれぞれ
電気的に接続する信号層が露出していることを特徴とす
る請求項2記載の基板モジュール。
5. The semiconductor package according to claim 2, wherein a plurality of electrodes are provided on a bottom surface of the semiconductor package, and signal layers electrically connected to the electrodes are exposed on a bottom surface of the concave portion. Board module.
JP8247797A 1996-09-19 1996-09-19 Substrate module Pending JPH1092970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8247797A JPH1092970A (en) 1996-09-19 1996-09-19 Substrate module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8247797A JPH1092970A (en) 1996-09-19 1996-09-19 Substrate module

Publications (1)

Publication Number Publication Date
JPH1092970A true JPH1092970A (en) 1998-04-10

Family

ID=17168804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8247797A Pending JPH1092970A (en) 1996-09-19 1996-09-19 Substrate module

Country Status (1)

Country Link
JP (1) JPH1092970A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002078078A3 (en) * 2001-03-26 2003-12-18 Intel Corp Dispensing process for fabrication of microelectronic packages
JP2006100459A (en) * 2004-09-29 2006-04-13 Mitsumi Electric Co Ltd Electronic circuit modular component and its manufacturing method
US7078788B2 (en) 2000-08-16 2006-07-18 Intel Corporation Microelectronic substrates with integrated devices
EP2003748A1 (en) * 2007-06-12 2008-12-17 Funai Electric Co., Ltd. Laser diode attachment holder
WO2014045139A1 (en) * 2012-09-18 2014-03-27 Assa Abloy Ab Method of protecting an electrical component in a laminate

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078788B2 (en) 2000-08-16 2006-07-18 Intel Corporation Microelectronic substrates with integrated devices
WO2002078078A3 (en) * 2001-03-26 2003-12-18 Intel Corp Dispensing process for fabrication of microelectronic packages
US6706553B2 (en) 2001-03-26 2004-03-16 Intel Corporation Dispensing process for fabrication of microelectronic packages
JP2006100459A (en) * 2004-09-29 2006-04-13 Mitsumi Electric Co Ltd Electronic circuit modular component and its manufacturing method
JP4543316B2 (en) * 2004-09-29 2010-09-15 ミツミ電機株式会社 Electronic circuit module component and manufacturing method thereof
EP2003748A1 (en) * 2007-06-12 2008-12-17 Funai Electric Co., Ltd. Laser diode attachment holder
WO2014045139A1 (en) * 2012-09-18 2014-03-27 Assa Abloy Ab Method of protecting an electrical component in a laminate
US9358722B2 (en) 2012-09-18 2016-06-07 Assa Abloy Ab Method of protecting an electrical component in a laminate

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