JPH1092605A - Manufacture of positive temperature thermistor - Google Patents
Manufacture of positive temperature thermistorInfo
- Publication number
- JPH1092605A JPH1092605A JP8240290A JP24029096A JPH1092605A JP H1092605 A JPH1092605 A JP H1092605A JP 8240290 A JP8240290 A JP 8240290A JP 24029096 A JP24029096 A JP 24029096A JP H1092605 A JPH1092605 A JP H1092605A
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- positive temperature
- coefficient thermistor
- resistance
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は特定の温度で抵抗値
が急激に増大する正特性サーミスタに関するものであ
り、特に室温での抵抗値が低く、耐電圧の高い正特性サ
ーミスタの製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive temperature coefficient thermistor whose resistance value rapidly increases at a specific temperature, and more particularly to a method of manufacturing a positive temperature coefficient thermistor having a low resistance value at room temperature and a high withstand voltage. It is.
【０００２】[0002]
【従来の技術】まず、主成分チタン酸バリウムに、副成
分として、半導体化させるためにＹ、Ｌａ等の希土類元
素あるいはＮｂ、Ｓｂ等の酸化物や、特性向上剤として
ＳｉやＭｎ等の酸化物を微量添加した原料を湿式ボール
ミルやディスパーミルなどを用いて混合し、フィルター
プレス、ドラムドライヤー等で脱水乾燥した後、これら
の混合粉末を仮焼する。次に、この仮焼粉末を湿式ボー
ルミルやサンドミル等により粉砕し、バインダーを加え
スラリー状にしたものをスプレードライヤー等により造
粒し、所望の形状に成形した後、本焼成を行い、得られ
た焼結体に電極を形成し正特性サーミスタを製造してい
た。2. Description of the Related Art First, a barium titanate as a main component is made of a rare earth element such as Y or La or an oxide such as Nb or Sb as a sub-component, or an oxide such as Si or Mn as a property improver. The raw materials to which a small amount of the substance is added are mixed using a wet ball mill, a disper mill, or the like, dehydrated and dried using a filter press, a drum dryer, or the like, and then the mixed powder is calcined. Next, the calcined powder was pulverized with a wet ball mill or a sand mill or the like, and a slurry was added to the binder, granulated by a spray drier or the like, formed into a desired shape, and then subjected to main baking. An electrode was formed on the sintered body to manufacture a positive temperature coefficient thermistor.
【０００３】[0003]
【発明が解決しようとする課題】正特性サーミスタは、
過電流防止用素子、温度制御用素子、モータ起動用素
子、消磁用素子、ヒータ用素子といったさまざまな用途
に応用されてきている。特に過電流防止用あるいは消磁
用素子においては、その小型化を図るため、室温での比
抵抗が小さいこと、抵抗温度係数が高く耐電圧が高いこ
とが要望されている。このような正特性サーミスタを得
るため、従来より組成面および工法面より鋭意研究され
ているが、上記方法で製造した正特性サーミスタは、室
温での比抵抗が低いものは耐電圧が低く、耐電圧が高い
ものは室温での比抵抗が高くなり、現在実用化されてい
るもので、室温の比抵抗が５Ωcmで耐電圧が３０〜４０
Ｖ／mmのものが限界であった。SUMMARY OF THE INVENTION A positive temperature coefficient thermistor is
It has been applied to various uses such as an overcurrent prevention element, a temperature control element, a motor starting element, a demagnetizing element, and a heater element. In particular, in order to reduce the size of the overcurrent preventing or demagnetizing element, it is required that the specific resistance at room temperature be small, the resistance temperature coefficient be high, and the withstand voltage be high. In order to obtain such a PTC thermistor, studies have been made diligently from the aspect of composition and method of construction.However, the PTC thermistor manufactured by the above method has low withstand voltage at low room temperature and low withstand voltage at room temperature. Those having a high voltage have a high specific resistance at room temperature and are currently in practical use. The specific resistance at room temperature is 5 Ωcm and the withstand voltage is 30 to 40.
V / mm was the limit.
【０００４】そこで本発明は、比抵抗が小さくかつ耐電
圧の高い正特性サーミスタを提供することを目的とする
ものであり、より具体的には、比抵抗が５Ωcm以下でか
つ耐電圧が４０Ｖ／mm以上の、従来にない優れた正特性
サーミスタを提供することを目的とするものである。Accordingly, an object of the present invention is to provide a positive temperature coefficient thermistor having a small specific resistance and a high withstand voltage. More specifically, the present invention has a specific resistance of 5 Ωcm or less and a withstand voltage of 40 V / V. It is an object of the present invention to provide an unprecedented excellent positive temperature coefficient thermistor of not less than mm.
【０００５】[0005]
【課題を解決するための手段】正特性サーミスタにおけ
る半導体化の機構に関しては、Ｙ、Ｌａなどの希土類元
素やＮｂ、Ｓｂなどの金属元素が、主成分であるチタン
酸バリウムに固溶したときに生ずる電子が伝導に寄与し
ているという、いわゆる原子価制御により説明されてき
た。しかしこのような半導体化元素の濃度には、最適な
範囲が存在し、濃度が低くても、逆に高くても半導体化
しづらい傾向があった。従って、正特性サーミスタの低
抵抗化の課題に対しては、この半導体化元素をいかにチ
タン酸バリウムに固溶させるかがポイントであった。Means for Solving the Problems Regarding the mechanism of semiconductor conversion in a positive temperature coefficient thermistor, a rare earth element such as Y and La and a metal element such as Nb and Sb are dissolved in barium titanate which is a main component. It has been explained by the so-called valence control that the resulting electrons contribute to conduction. However, there is an optimum range for the concentration of such a semiconducting element, and it tends to be difficult to be semiconducting even if the concentration is low or conversely high. Therefore, the point of solving the problem of lowering the resistance of the positive temperature coefficient thermistor was how to dissolve the semiconductor-forming element in barium titanate.
【０００６】一方、耐電圧向上に関しては、電気的特性
からは抵抗温度係数を大きくすること、又磁器的には結
晶粒子径を均一、微細にすることがポイントであった。On the other hand, with respect to the improvement of the withstand voltage, it is important to increase the temperature coefficient of resistance in view of the electrical characteristics and to make the crystal grain diameter uniform and fine in porcelain.
【０００７】そこで上記目的を達成するために、本発明
の正特性サーミスタの製造方法は、チタン酸バリウム又
はその固溶体を生じさせる原料に、半導体化元素として
希土類元素あるいはＮｂ、Ｓｂ、Ｂｉの酸化物のうち少
なくとも一種類とＭｇの化合物を添加、混合し、次にこ
の原料粉末を１２００〜１３００℃の範囲にて仮焼し、
次いでこの仮焼粉にＳｉとＭｎの各酸化物を添加混合し
た後、成形し、次にこの成形体を１３００℃以上で本焼
成することを特徴とするものであり、これにより上記目
的を達成することができる。In order to achieve the above object, a method for producing a positive temperature coefficient thermistor according to the present invention is to provide a raw material for forming barium titanate or a solid solution thereof with a rare earth element or oxide of Nb, Sb or Bi as a semiconducting element. At least one of them and a compound of Mg are added and mixed, and then the raw material powder is calcined in a range of 1200 to 1300 ° C.
Then, after adding and mixing each oxide of Si and Mn to the calcined powder, molding is performed, and then, the molded body is fully fired at 1300 ° C. or more, thereby achieving the above object. can do.
【０００８】[0008]
【発明の実施の形態】本発明の請求項１に記載の発明
は、チタン酸バリウムを主成分とする原料に、半導体化
元素として希土類元素あるいはＮｂ、Ｓｂ、Ｂｉの酸化
物のうち少なくとも一種類と、Ｍｇの化合物を添加、混
合し、次にこの原料粉末を１２００〜１３００℃の範囲
にて仮焼し、次いでこの仮焼粉にＳｉとＭｎの各酸化物
を添加混合した後、成形し、次にこの成形体を１３００
℃以上で本焼成することを特徴とする正特性サーミスタ
の製造方法であり、半導体化元素の主成分への固溶が進
行しやすくなり、低抵抗化が図れるとともに、抵抗温度
係数が大きく、結晶粒子径が均一で微細であるので耐電
圧を向上させることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is characterized in that a raw material mainly composed of barium titanate contains at least one of rare earth elements or oxides of Nb, Sb and Bi as semiconducting elements. And a compound of Mg are added and mixed. Then, the raw material powder is calcined in a range of 1200 to 1300 ° C., and then each oxide of Si and Mn is added to the calcined powder and mixed. Then, this molded body is 1300
This is a method for producing a positive temperature coefficient thermistor characterized by being baked at a temperature of at least 100 ° C., in which solid solution of a semiconducting element in a main component is easily progressed, resistance can be reduced, and a temperature coefficient of resistance is large. Since the particle diameter is uniform and fine, the withstand voltage can be improved.
【０００９】請求項２に記載の発明は、仮焼を還元雰囲
気中で行うことを特徴とする請求項１に記載の正特性サ
ーミスタの製造方法であり、還元雰囲気中で仮焼するこ
とにより酸素欠陥に伴う伝導原子が生成し、より低抵抗
な正特性サーミスタを得ることができる。According to a second aspect of the present invention, there is provided the method of manufacturing a positive temperature coefficient thermistor according to the first aspect, wherein the calcination is performed in a reducing atmosphere. Conductive atoms are generated due to the defect, and a positive resistance thermistor with lower resistance can be obtained.
【００１０】以下本発明の実施の形態について説明す
る。 （実施の形態１）まず（Ｂａ0.90Ｃａ0.10）ＴｉＯ3＋
０．００２Ｙ2Ｏ3＋０．００１ＭｇＯの組成となるよう
に、ＢａＣＯ3、ＣａＣＯ3、ＴｉＯ2、Ｙ2Ｏ3、ＭｇＯ
の各原料を秤量し、ボールミルにて湿式混合する。次に
この混合物を乾燥した後、（表１）の試料番号２〜１０
に示した温度（以下、仮焼温度とする）で空気中にて仮
焼する。An embodiment of the present invention will be described below. (Embodiment 1) First, (Ba 0.90 Ca 0.10 ) TiO 3 +
BaCO 3 , CaCO 3 , TiO 2 , Y 2 O 3 , MgO so that the composition becomes 0.002Y 2 O 3 + 0.001MgO.
Are weighed and wet-mixed in a ball mill. Next, after this mixture was dried, sample numbers 2 to 10 in (Table 1) were used.
(Hereinafter referred to as the calcination temperature) in the air.
【００１１】[0011]
【表１】 [Table 1]
【００１２】次にこの仮焼粉に、主成分（Ｂａ0.90Ｃａ
0.10）ＴｉＯ3１モルに対して、ＳｉＯ2を０．０２モル
と、ＭｎＯ2を０．０００５モル添加、混合した後、再
びボールミルにて湿式粉砕し乾燥する。次にこの乾燥粉
にポリビニルアルコールからなるバインダーを添加、造
粒し、１平方センチメートル当たり８００kgの圧力で直
径２０mm、厚さ２．５mmの円板状に成形した。次にこれ
らの成形体を（表１）に示した温度にて２時間本焼成を
行い焼結体を得た。この焼結体表面の所定の位置にＮｉ
メッキを施した後、銀ペーストを印刷塗布、焼き付け
し、一対の電極を形成し、正特性サーミスタを得た。Next, a main component (Ba 0.90 Ca
0.10) with respect to TiO 3 1 mol and the SiO 2 0.02 mol of MnO 2 0.0005 moles added, after mixing, are wet pulverized again by the ball mill drying. Next, a binder made of polyvinyl alcohol was added to the dried powder, granulated, and molded into a disk having a diameter of 20 mm and a thickness of 2.5 mm at a pressure of 800 kg per square centimeter. Next, these compacts were baked for 2 hours at the temperatures shown in Table 1 to obtain sintered compacts. Ni is placed at a predetermined position on the surface of the sintered body.
After plating, a silver paste was printed and baked to form a pair of electrodes to obtain a positive temperature coefficient thermistor.
【００１３】ここで（表１）の試料番号１の試料は、従
来法との比較のための正特性サーミスタであり、次のよ
うにして製造したものである。Here, the sample of sample No. 1 in Table 1 is a positive temperature coefficient thermistor for comparison with the conventional method, and was manufactured as follows.
【００１４】まず（Ｂａ0.90Ｃａ0.10）ＴｉＯ3＋０．
００２Ｙ2Ｏ3＋０．００１ＭｇＯ＋０．０２ＳｉＯ2＋
０．０００５ＭｎＯ2の組成となるように、上記と同様
な原料を用いて、ボールミルにて湿式混合した後、乾燥
し１２００℃で仮焼する。その後の工程は本実施の形態
と同様な方法で行った。First, (Ba 0.90 Ca 0.10 ) TiO 3 +0.
002Y 2 O 3 + 0.001MgO + 0.02SiO 2 +
Using a raw material similar to the above, the mixture is wet-mixed with a ball mill so that the composition becomes 0.0005 MnO 2 , dried, and calcined at 1200 ° C. Subsequent steps were performed in the same manner as in the present embodiment.
【００１５】次に、このように作製された正特性サーミ
スタの各種の電気特性を測定する。その抵抗温度特性よ
り、室温比抵抗値ρ25、抵抗温度係数α、耐電圧ＶBDを
評価する。その評価結果を（表１）に示した。Next, various electrical characteristics of the positive temperature coefficient thermistor thus manufactured are measured. From the resistance temperature characteristics, the room temperature specific resistance value ρ 25 , the temperature coefficient of resistance α, and the withstand voltage V BD are evaluated. The evaluation results are shown in (Table 1).
【００１６】ここで、抵抗温度係数については次式に従
い求めた。 〔ｌｎ（Ｒ2／Ｒ1）／（Ｔ2−Ｔ1）〕×１００（％／
℃） 但し、Ｒ1、Ｔ1；Ｒ25の２倍の抵抗値およびその時の温
度 Ｒ2、Ｔ2；（Ｔ1＋３０）℃の抵抗値およびその時の温
度である。Here, the temperature coefficient of resistance was determined according to the following equation. [Ln (R 2 / R 1 ) / (T 2 −T 1 )] × 100 (% /
° C) where R 1 , T 1 ; the resistance value twice as high as R 25 and the temperature at that time R 2 , T 2 ; the resistance value at (T 1 +30) ° C. and the temperature at that time.
【００１７】（表１）より明らかなように、仮焼温度お
よび本焼成温度が本発明の範囲内である試料番号５〜８
の正特性サーミスタは、低抵抗で耐電圧が高いが、試料
番号１〜４および９，１０の本発明の範囲外の正特性サ
ーミスタにはその効果が認められない。As apparent from Table 1, sample numbers 5 to 8 in which the calcination temperature and the main calcination temperature are within the range of the present invention.
The positive temperature coefficient thermistor of Example 1 has a low resistance and a high withstand voltage, but the positive temperature coefficient thermistors of Sample Nos. 1 to 4 and 9 and 10 out of the range of the present invention have no effect.
【００１８】（実施の形態２）（実施の形態１）と同様
な組成で原料を秤量しボールミルにて湿式混合し乾燥す
る。次に（表２）に示した試料番号１〜２０の温度にて
仮焼する。(Embodiment 2) Raw materials having the same composition as in (Embodiment 1) are weighed, wet-mixed in a ball mill, and dried. Next, it is calcined at the temperatures of sample numbers 1 to 20 shown in (Table 2).
【００１９】[0019]
【表２】 [Table 2]
【００２０】ただし、このときの焼成雰囲気は、水素１
０％のグリーンガス中の還元雰囲気で行うものとする。
以降の工程は上記（実施の形態１）と同様に、粉砕、造
粒、成形し、（表２）に示した温度にて２時間本焼成を
行い、得られた焼結体に電極を形成した。However, the firing atmosphere at this time is hydrogen 1
It is performed in a reducing atmosphere in 0% green gas.
In the subsequent steps, as in the above (Embodiment 1), pulverization, granulation, and molding were performed, and the main firing was performed at the temperature shown in (Table 2) for 2 hours to form an electrode on the obtained sintered body. did.
【００２１】また、従来法との比較のために、（実施の
形態１）と同様な方法で正特性サーミスタを作製した。
ただし、仮焼時の焼成雰囲気を水素１０％のグリーンガ
ス中で行った。次に、このように作製した正特性サーミ
スタの各種電気特性を（実施の形態１）と同様な方法で
評価した。その結果を（表２）に示した。For comparison with the conventional method, a PTC thermistor was manufactured in the same manner as in the first embodiment.
However, the calcination was performed in a green gas atmosphere of 10% hydrogen. Next, various electrical characteristics of the PTC thermistor thus manufactured were evaluated in the same manner as in the first embodiment. The results are shown in (Table 2).
【００２２】（表２）より明らかなように、本発明の範
囲内である試料番号１５〜１８の正特性サーミスタはさ
らに低比抵抗で耐電圧の高いものであるが、試料番号１
１〜１４および１９，２０の本発明の範囲外である正特
性サーミスタにはその効果は認められない。As is clear from Table 2, the positive temperature coefficient thermistors of Sample Nos. 15 to 18 which are within the scope of the present invention have lower specific resistance and higher withstand voltage.
The effects of the positive temperature coefficient thermistors 1 to 14 and 19 and 20 outside the scope of the present invention are not recognized.
【００２３】本実施の形態において還元雰囲気として水
素１０％のグリーンガス中としたが、これに限らず還元
雰囲気であれば同様の結果が得られる。In this embodiment, the reducing atmosphere is green gas of 10% hydrogen. However, the present invention is not limited to this, and similar results can be obtained if the reducing atmosphere is used.
【００２４】なお（実施の形態１）、（実施の形態２）
においては、主成分として（Ｂａ0. 90Ｃａ0.10）ＴｉＯ
3で表されるものを用いたが、チタン酸バリウム又はそ
の固溶体を生じさせる原料を用いれば同様の効果が得ら
れる。(Embodiment 1), (Embodiment 2)
In, (Ba 0. 90 Ca 0.10) as a main component TiO
Although the material represented by 3 was used, the same effect can be obtained by using a raw material that forms barium titanate or a solid solution thereof.
【００２５】また主成分１モルに対して、半導体化元素
量は０．００１〜０．００４モル、Ｍｇ量は０．００１
〜０．０３モル、ＳｉＯ2量は０．０１〜０．０５モ
ル、ＭｎＯ2量は０．０００１〜０．００１５モルの範
囲で添加するのが好ましい。なぜなら、これらの範囲外
であると室温での抵抗値が大きく上昇し、抵抗温度係数
が低くなり、耐電圧の向上が図れなくなるからである。The amount of the semiconducting element is 0.001 to 0.004 mol, and the amount of Mg is 0.001 mol per mol of the main component.
0.03 moles, SiO 2 content from 0.01 to 0.05 mol, MnO 2 content is preferably added in the range of 0.0001 to 0.0015 mol. This is because if the temperature is outside these ranges, the resistance value at room temperature greatly increases, the temperature coefficient of resistance decreases, and the withstand voltage cannot be improved.
【００２６】さらに、本焼成の温度は１３００℃以上と
なっているが、上記（実施の形態１）、（実施の形態
２）で示したように１３００〜１３５０℃の範囲が好ま
しい。なぜならこの範囲以外の温度であると抵抗値が逆
に高くなってしまうからである。Further, the temperature of the main firing is 1300 ° C. or higher, but is preferably in the range of 1300 to 1350 ° C. as described in the above (Embodiment 1) and (Embodiment 2). This is because if the temperature is outside this range, the resistance value will increase.
【００２７】又、本発明におけるＭｇの化合物として
は、ＭｇＯの他に焼成により酸化物を生じる炭酸塩、水
酸化物等が挙げられる。Examples of the compound of Mg in the present invention include, in addition to MgO, carbonates and hydroxides which form oxides upon firing.
【００２８】以上（実施の形態１）および（実施の形態
２）に示したように、本発明の正特性サーミスタの製造
方法を用いることにより、比抵抗が５Ωcm以下で、耐電
圧が５０Ｖ／mm以上の従来にない低抵抗で高耐電圧の正
特性サーミスタを得ることができる。As described above (Embodiment 1) and (Embodiment 2), by using the method of manufacturing a positive temperature coefficient thermistor of the present invention, the specific resistance is 5 Ωcm or less and the withstand voltage is 50 V / mm. The above-mentioned non-conventional low-resistance, high-withstand-voltage positive-characteristic thermistor can be obtained.
【００２９】[0029]
【発明の効果】以上の説明より明らかなように、本発明
は、チタン酸バリウムを主成分とする原料に、半導体化
元素として希土類元素あるいはＮｂ、Ｓｂ、Ｂｉの酸化
物のうち少なくとも一種類とＭｇの化合物を添加、混合
し、次にこの原料粉末を１２００〜１３００℃の範囲に
て仮焼し、次いでこの仮焼粉にＳｉとＭｎの各酸化物を
添加混合した後、成形し、次にこの成形体を１３００℃
以上で本焼成することを特徴とする正特性サーミスタの
製造方法であり、従来にない低抵抗で耐電圧の高い正特
性サーミスタを得ることができ、製品の小型化や高電力
回路への応用が期待できるためその工業的利用価値は大
きい。As is apparent from the above description, the present invention relates to a method in which a barium titanate as a main component is mixed with at least one of rare earth elements or oxides of Nb, Sb, and Bi as semiconducting elements. A compound of Mg is added and mixed, then the raw material powder is calcined in a range of 1200 to 1300 ° C., and each oxide of Si and Mn is added and mixed to the calcined powder, and then molded. 1300 ° C
This is a method for manufacturing a positive temperature coefficient thermistor characterized by main firing, which makes it possible to obtain a positive temperature coefficient thermistor with low resistance and high withstand voltage, which is unprecedented, and is applicable to miniaturization of products and application to high power circuits. As it can be expected, its industrial value is large.
Claims (2)
に、半導体化元素として希土類元素あるいはＮｂ、Ｓ
ｂ、Ｂｉの酸化物のうち少なくとも一種類と、Ｍｇの化
合物を添加、混合し、次にこの原料粉末を１２００〜１
３００℃の範囲にて仮焼し、次いでこの仮焼粉にＳｉと
Ｍｎの各酸化物を添加混合した後、成形し、次にこの成
形体を１３００℃以上で本焼成することを特徴とする正
特性サーミスタの製造方法。1. A raw material containing barium titanate as a main component and a rare earth element or Nb, S
b, at least one of the oxides of Bi and a compound of Mg are added and mixed.
After calcination in the range of 300 ° C., and then adding and mixing each oxide of Si and Mn to the calcined powder, molding, and then, sintering the molded body at 1300 ° C. or more. A method for manufacturing a positive temperature coefficient thermistor.
とする請求項１に記載の正特性サーミスタの製造方法。2. The method for producing a positive temperature coefficient thermistor according to claim 1, wherein the calcination is performed in a reducing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8240290A JPH1092605A (en) | 1996-09-11 | 1996-09-11 | Manufacture of positive temperature thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8240290A JPH1092605A (en) | 1996-09-11 | 1996-09-11 | Manufacture of positive temperature thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1092605A true JPH1092605A (en) | 1998-04-10 |
Family
ID=17057288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8240290A Pending JPH1092605A (en) | 1996-09-11 | 1996-09-11 | Manufacture of positive temperature thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1092605A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013065413A1 (en) * | 2011-11-01 | 2013-05-10 | 株式会社村田製作所 | Method for manufacturing ceramic semiconductor having positive resistance-temperature characteristics, ceramic semiconductor, and ptc thermistor using said ceramic semiconductor |
| JP2014034505A (en) * | 2012-08-10 | 2014-02-24 | Nichicon Corp | Semiconductor ceramic composition and method of producing the same |
| JP2017178658A (en) * | 2016-03-30 | 2017-10-05 | ニチコン株式会社 | Semiconductor ceramic composition and method for producing the same |
-
1996
- 1996-09-11 JP JP8240290A patent/JPH1092605A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013065413A1 (en) * | 2011-11-01 | 2013-05-10 | 株式会社村田製作所 | Method for manufacturing ceramic semiconductor having positive resistance-temperature characteristics, ceramic semiconductor, and ptc thermistor using said ceramic semiconductor |
| JP2014034505A (en) * | 2012-08-10 | 2014-02-24 | Nichicon Corp | Semiconductor ceramic composition and method of producing the same |
| JP2017178658A (en) * | 2016-03-30 | 2017-10-05 | ニチコン株式会社 | Semiconductor ceramic composition and method for producing the same |
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