JPH1092364A - Focused ion beam processing positioning method - Google Patents
Focused ion beam processing positioning methodInfo
- Publication number
- JPH1092364A JPH1092364A JP8247523A JP24752396A JPH1092364A JP H1092364 A JPH1092364 A JP H1092364A JP 8247523 A JP8247523 A JP 8247523A JP 24752396 A JP24752396 A JP 24752396A JP H1092364 A JPH1092364 A JP H1092364A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- sample
- scanning
- sem image
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、集束イオンビーム
加工装置における加工位置合わせ方法に係わり、特に対
象試料のダメージを最小限に押えることが可能な集束イ
オンビーム加工位置合わせ方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing position alignment method in a focused ion beam processing apparatus, and more particularly to a focused ion beam processing position alignment method capable of minimizing damage to a target sample.
【０００２】[0002]
【従来の技術】従来の集束イオンビーム加工方法および
加工装置については、特開平1−181529号公報で論じら
れている。その装置の概要を図４に示す。2. Description of the Related Art A conventional focused ion beam processing method and processing apparatus are discussed in JP-A-1-181529. FIG. 4 shows an outline of the apparatus.
【０００３】[0003]
【発明が解決しようとする課題】従来技術ではイオンビ
ーム軸と電子ビーム軸が必ずしも対象試料面上で一致し
ないために、加工位置を設定するためには対象試料面上
をイオンビームで走査する必要があった。このため試料
面上にイオンビームによるダメージを与えてしまってい
た。In the prior art, since the ion beam axis and the electron beam axis do not always coincide on the target sample surface, it is necessary to scan the target sample surface with the ion beam in order to set the processing position. was there. For this reason, the sample surface was damaged by the ion beam.
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するため
に、本発明は電子ビームを走査する制御系に偏向領域の
２軸方向に個別の倍率を設定する機構と中心位置をシフ
トする機構を設け、試料面上に設けた検出パターンの位
置関係をＳＩＭ像，ＳＥＭ像各々で求めその相関値を前
述の倍率を設定する機構、中心位置をシフトする機構に
設定することによりＳＩＭ像と同一のＳＥＭ像を得られ
る。この後、試料ステージを移動し目的対象物をＳＥＭ
像で検索し、得られたＳＥＭ像を基にイオンビームによ
る加工領域の設定を行う。In order to achieve the above object, the present invention provides a control system for scanning an electron beam with a mechanism for setting individual magnifications in two directions of a deflection area and a mechanism for shifting a center position. The SIM and the SEM image are used to determine the positional relationship of the detection pattern provided on the sample surface, and the correlation value is set to the above-described mechanism for setting the magnification and the mechanism for shifting the center position, thereby obtaining the same as the SIM image. An SEM image can be obtained. After this, the sample stage is moved and the target object is
An image is searched, and a processing area is set by an ion beam based on the obtained SEM image.
【０００５】この機構を設けることにより対象試料表面
上をイオンビームで一度も走査すること無く、電子ビー
ムを走査することにより得られるＳＥＭ像を用いて加工
領域の設定が可能となる。By providing this mechanism, it is possible to set a processing area using an SEM image obtained by scanning an electron beam without scanning the surface of the target sample with an ion beam.
【０００６】[0006]
【発明の実施の形態】本発明の実施例を図１に示す。メ
インチャンバ１にはゲートバルブ２を介してロードロッ
クチャンバ３が設けられており、メインチャンバ１はバ
ルブ４を介して真空ポンプにより排気され、ロードロッ
クチャンバ３もまたバルブ５を介して真空ポンプにより
排気される。メインチャンバ１にはイオンビーム鏡筒
６，電子ビーム鏡筒７，２次電子ディテクタ８及び試料
ステージ９が設けられている。このうちイオンビーム鏡
筒６には液体金属イオン源１０，イオンビーム集束用静
電レンズ系１１，ブランキング電極１２，ブランキング
アパーチャ１３及び偏向制御電極１４が設けられてお
り、各々の電極には必要な電圧が外部から印加されるよ
うになっている。また、電子ビーム鏡筒７は通常の走査
電子顕微鏡（ＳＥＭ）に用いられているものと同様なも
ので、レンズ系やブランキング電極，偏向制御電極等に
より試料１５上に焦点を結んだ状態で試料１５上を電子
ビーム１７によって走査するが、イオンビーム１６が照
射されている間、電子ビーム１７はブランキングされる
ようになっている。ここで、イオンビーム１６と電子ビ
ーム１７の切替はイオンビーム・ブランキング制御器１
９，イオンビーム・スキャニング制御器１８，電子ビー
ム・ブランキング制御器２１及び電子ビーム・スキャニ
ング制御器２０を制御装置２４からのタイミング指令に
より、スキャン制御，ブランキング制御を所望に切替え
て行う。イオンビーム１６が試料１５上に照射されてい
る場合は、イオンビーム１６による２次電子を２次電子
ディテクタ８で捕らえ、イメージ制御器２２によりＳＩ
Ｍ像をモニタ２３上に表示する。電子ビーム１７が試料
１５上に照射されている場合は、電子ビーム１７による
２次電子を２次電子ディテクタ８で捕らえ、イメージ制
御器２２によりＳＥＭ像をモニタ２３上に表示する。FIG. 1 shows an embodiment of the present invention. The main chamber 1 is provided with a load lock chamber 3 via a gate valve 2. The main chamber 1 is evacuated by a vacuum pump via a valve 4, and the load lock chamber 3 is also exhausted by a vacuum pump via a valve 5. Exhausted. The main chamber 1 is provided with an ion beam column 6, an electron beam column 7, a secondary electron detector 8, and a sample stage 9. Among them, the ion beam column 6 is provided with a liquid metal ion source 10, an ion beam focusing electrostatic lens system 11, a blanking electrode 12, a blanking aperture 13, and a deflection control electrode 14. The required voltage is applied from outside. The electron beam column 7 is similar to that used in a normal scanning electron microscope (SEM), and is focused on the sample 15 by a lens system, a blanking electrode, a deflection control electrode, and the like. The sample 15 is scanned with the electron beam 17, and the electron beam 17 is blanked while the ion beam 16 is irradiated. Here, the switching between the ion beam 16 and the electron beam 17 is performed by the ion beam blanking controller 1.
9, the ion beam scanning controller 18, the electron beam blanking controller 21, and the electron beam scanning controller 20 are switched between scan control and blanking control as desired by a timing command from the control device 24. When the sample 15 is irradiated with the ion beam 16, secondary electrons generated by the ion beam 16 are captured by the secondary electron detector 8, and the secondary electrons are detected by the image controller 22.
The M image is displayed on the monitor 23. When the electron beam 17 is irradiated on the sample 15, secondary electrons generated by the electron beam 17 are captured by the secondary electron detector 8, and an SEM image is displayed on the monitor 23 by the image controller 22.
【０００７】なお、電子シャワー銃２９はイオンビーム
１６による加工でチャージアップが生じた際に試料１５
表面での正電荷を中和するもので、ＳＥＭ像観察時はブ
ランキング制御器２８によりブランキングがかけられる
ようになっている。また、ＸｅＦ等のガスをガス制御器
３２でガスバルブ３１を制御することによりメインチャ
ンバ１内に設けたガス吹き付けノズル３０から試料１５
面上に引き付けて加工時に発生するスパッタ粒子の再付
着を発生させなくすることができる。本装置構成で、イ
オンビーム鏡筒６と電子ビーム鏡筒７は電子ビーム１７
がイオンビーム１６に対してある角度θをもつように設
置されている。また、試料ステージ９上に設置された試
料１５上へのイオンビーム１６照射点の近くに電子ビー
ム１７が照射されるように機械的な調整がされている。
但し、機械的な調整では数μｍ単位で各ビームの照射点
を一致させるのは困難である。そこで図２に示すように
試料１５上に設けた複数の登録マーク３３間の距離をＳ
ＩＭ像上及びＳＥＭ像上で各々計測し以下の演算式によ
り求めた補正値をオフセット制御器２５及びゲイン制御
器２６に設定することによりＳＩＭ像とＳＥＭ像を一致
させる。When the electron shower gun 29 is charged up by processing with the ion beam 16, the sample 15
It neutralizes the positive charge on the surface, and is blanked by the blanking controller 28 during SEM image observation. The gas such as XeF is controlled by the gas valve 31 by the gas controller 32 so that the gas spray nozzle 30 provided in the main chamber 1 supplies the sample 15.
It is possible to prevent sputter particles from being reattached during processing by being attracted to the surface. In this device configuration, the ion beam column 6 and the electron beam column 7
Are set to have a certain angle θ with respect to the ion beam 16. In addition, mechanical adjustment is performed so that the electron beam 17 is irradiated near the irradiation point of the ion beam 16 on the sample 15 placed on the sample stage 9.
However, it is difficult to match the irradiation points of the respective beams in units of several μm by mechanical adjustment. Therefore, as shown in FIG. 2, the distance between the plurality of registration marks 33 provided on the sample 15 is represented by S
The SIM image and the SEM image are matched by setting the correction values measured on the IM image and the SEM image and obtained by the following arithmetic expressions in the offset controller 25 and the gain controller 26.
【０００８】Ｘ方向の倍率補正値＝Ｌ１／Ｌ２ Ｙ方向の倍率補正値＝Ｈ１／Ｈ２ Ｘ方向の中心位置補正値＝Ｘ２−（Ｌ２／Ｌ１）×Ｘ１ Ｙ方向の中心位置補正値＝Ｙ２−（Ｈ２／Ｈ１）×Ｙ１ この操作で各計測ポイントの指定はモニタ２３上に表示
されたＳＩＭ像及びＳＥＭ像上にカーソルを表示し、そ
れを移動させることに行うが、イメージ制御器２２に設
けた画像検出器２７で画像処理により検出することとし
てもよい。Magnification correction value in X direction = L1 / L2 Magnification correction value in Y direction = H1 / H2 Center position correction value in X direction = X2- (L2 / L1) × X1 Center position correction value in Y direction = Y2- (H2 / H1) × Y1 In this operation, each measurement point is designated by displaying a cursor on the SIM image and the SEM image displayed on the monitor 23 and moving the cursor. Alternatively, it may be detected by the image detector 27 by image processing.
【０００９】この操作によりＳＥＭ画像をＳＩＭ画像と
一致させた状態で試料ステージ９上の試料１５の所望の
位置がイオンビーム１６下に来るようにＳＥＭ像を観察
しながら移動させる。移動終了後ＳＥＭ像で所望の加工
位置を設定し先の各補正値に基づいてイオンビーム１６
の走査領域をイオンビーム・スキャン制御器に設定して
ビーム走査を行い加工を実行する。By this operation, the SEM image is moved while observing the SEM image so that the desired position of the sample 15 on the sample stage 9 is located below the ion beam 16 in a state where the SEM image matches the SIM image. After the movement, a desired processing position is set on the SEM image, and the ion beam 16 is set based on the respective correction values.
Is set in the ion beam scan controller to perform beam scanning and execute processing.
【００１０】[0010]
【発明の効果】本発明によれば、対象試料面上をイオン
ビームで一度も走査することなく、電子ビームを走査す
ることにより得られるＳＥＭ像を用いて加工領域の設定
が加工となるため、試料ダメージを減らす効果がある。According to the present invention, the processing region is set by using the SEM image obtained by scanning the electron beam without scanning the target sample surface with the ion beam once. This has the effect of reducing sample damage.
【図１】本発明の集束イオンビーム加工装置のブロック
図。FIG. 1 is a block diagram of a focused ion beam processing apparatus according to the present invention.
【図２】ＳＩＭ像とＳＥＭ像の関係を示す説明図。FIG. 2 is an explanatory diagram showing a relationship between a SIM image and an SEM image.
【図３】従来の集束イオンビーム加工装置のブロック
図。FIG. 3 is a block diagram of a conventional focused ion beam processing apparatus.
２…ゲートバルブ、３…ロードロックチャンバ、４，５
…バルブ、６…イオンビーム鏡筒、７…電子ビーム鏡
筒、８…２次電子ディテクタ、９…試料ステージ、１０
…液体金属イオン源、１１…イオンビーム集束用静電レ
ンズ系、１２…ブランキング電極、１３…ブランキング
アパーチャ、１４…偏向制御電極、１５…試料、１６…
イオンビーム、１７…電子ビーム、１８，２０…スキャ
ン制御器、１９，２１，２８…ブランキング制御器、２
２…イメージ制御器、２３…モニタ、２４…制御装置、
２５…オフセット制御器、２６…ゲイン制御器、２７…
画像検出器、２９…電子シャワー銃、３０…ガス吹き付
けノズル、３１…ガスバルブ、３２…ガス制御器。2 ... Gate valve, 3 ... Load lock chamber, 4,5
... Valve, 6 ... Ion beam column, 7 ... Electron beam column, 8 ... Secondary electron detector, 9 ... Sample stage, 10
... Liquid metal ion source, 11 ... Ion beam focusing electrostatic lens system, 12 ... Blanking electrode, 13 ... Blanking aperture, 14 ... Deflection control electrode, 15 ... Sample, 16 ...
Ion beam, 17 ... electron beam, 18, 20 ... scan controller, 19, 21, 28 ... blanking controller, 2
2 ... Image controller, 23 ... Monitor, 24 ... Control device,
25 ... offset controller, 26 ... gain controller, 27 ...
Image detector, 29: electronic shower gun, 30: gas spray nozzle, 31: gas valve, 32: gas controller.
Claims (3)
より集束して集束イオンビームを形成し、上記集束イオ
ンビームを用いて試料を加工する集束イオンビーム加工
装置において、イオンビーム軸方向から傾いた軸方向に
電子ビームを走査する光学系を設け、前記電子ビームを
走査して得られたＳＥＭ像を、前記イオンビームを走査
して得られたＳＩＭ像に合わせる機構を有することを特
徴とする集束イオンビーム加工位置合わせ方法。An ion beam emitted from an ion source is focused by an electrostatic lens to form a focused ion beam, and a focused ion beam processing apparatus for processing a sample using the focused ion beam is inclined from an ion beam axis direction. An optical system for scanning the electron beam in the axial direction, and a mechanism for matching a SEM image obtained by scanning the electron beam with a SIM image obtained by scanning the ion beam. Focused ion beam processing alignment method.
に上記試料面上の登録マークを使用する請求項１に記載
の集束イオンビーム加工位置合わせ方法。2. The focused ion beam processing position alignment method according to claim 1, wherein a registration mark on the sample surface is used to align the SEM image with the SIM image.
記ＳＥＭ像を基に行う請求項１に記載の集束イオンビー
ム加工位置合わせ方法。3. The focused ion beam processing position alignment method according to claim 1, wherein the processing position is designated by the ion beam based on the SEM image.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8247523A JPH1092364A (en) | 1996-09-19 | 1996-09-19 | Focused ion beam processing positioning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8247523A JPH1092364A (en) | 1996-09-19 | 1996-09-19 | Focused ion beam processing positioning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1092364A true JPH1092364A (en) | 1998-04-10 |
Family
ID=17164766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8247523A Pending JPH1092364A (en) | 1996-09-19 | 1996-09-19 | Focused ion beam processing positioning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1092364A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6521902B1 (en) | 2000-08-15 | 2003-02-18 | International Business Machines Corporation | Process for minimizing electrostatic damage and pole tip recession of magnetoresistive magnetic recording head during pole tip trimming by focused ion beam milling |
| JP2006309952A (en) * | 2005-04-26 | 2006-11-09 | Sii Nanotechnology Inc | Composite charged particle beam device and method for determining irradiation position in it |
| US8109236B2 (en) | 2007-04-05 | 2012-02-07 | Sumitomo Corporation Of America | Fluid delivery assembly |
| US20120211652A1 (en) * | 2009-10-23 | 2012-08-23 | Kunio Sakamoto | Charged Particle Beam Device, Position Specification Method Used for Charged Particle Beam Device, and Program |
| US8668400B2 (en) | 2007-04-05 | 2014-03-11 | The Hartz Mountain Corporation | Fluid applicator |
-
1996
- 1996-09-19 JP JP8247523A patent/JPH1092364A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6521902B1 (en) | 2000-08-15 | 2003-02-18 | International Business Machines Corporation | Process for minimizing electrostatic damage and pole tip recession of magnetoresistive magnetic recording head during pole tip trimming by focused ion beam milling |
| JP2006309952A (en) * | 2005-04-26 | 2006-11-09 | Sii Nanotechnology Inc | Composite charged particle beam device and method for determining irradiation position in it |
| US8109236B2 (en) | 2007-04-05 | 2012-02-07 | Sumitomo Corporation Of America | Fluid delivery assembly |
| US8668400B2 (en) | 2007-04-05 | 2014-03-11 | The Hartz Mountain Corporation | Fluid applicator |
| US20120211652A1 (en) * | 2009-10-23 | 2012-08-23 | Kunio Sakamoto | Charged Particle Beam Device, Position Specification Method Used for Charged Particle Beam Device, and Program |
| US8912487B2 (en) * | 2009-10-23 | 2014-12-16 | Hitachi High-Technologies Corporation | Charged particle beam device, position specification method used for charged particle beam device, and program |
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