JPH1084246A - Acoustic boundary wave device and its production - Google Patents

Acoustic boundary wave device and its production

Info

Publication number
JPH1084246A
JPH1084246A JP23787696A JP23787696A JPH1084246A JP H1084246 A JPH1084246 A JP H1084246A JP 23787696 A JP23787696 A JP 23787696A JP 23787696 A JP23787696 A JP 23787696A JP H1084246 A JPH1084246 A JP H1084246A
Authority
JP
Japan
Prior art keywords
substrate
base
acoustic wave
main surface
boundary acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23787696A
Other languages
Japanese (ja)
Other versions
JP3779389B2 (en
Inventor
Naoyuki Mishima
直之 三島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23787696A priority Critical patent/JP3779389B2/en
Publication of JPH1084246A publication Critical patent/JPH1084246A/en
Application granted granted Critical
Publication of JP3779389B2 publication Critical patent/JP3779389B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To produce a compact and inexpensive device which has a function equivalent to an SAW (surface acoustic wave) device by transmitting an SAW along the boundary surface between a 1st layer of an Si group and a piezoelectric 2nd layer. SOLUTION: A dielectric film 4 having the comb-line grooves 3 is formed on the main side of a 1st substrate 2 of an Si group, and these grooves 3 are filled with a conductive material to form a comb-line electrode 5. Then a piezoelectric 2nd substrate 6 is bonded on the substrate 2. Thus, an acoustic boundary wave device is obtained. It's desirable for the substrate 2 to have high resistance of 10Ωcm or more to prevent the DC leakage caused by the electrode 5. The substrate 6 uses LiNO3 ., for example. The area of the main side of the substrate 6 is smaller than that of the main side of the substrate 2, and the substrate 6 has only an effective area that is necessary at least for transmission of the acoustic boundary wave. The film 4 uses SiO2 , for example. In such a constitution, an SiO2 film is formed just by applying an oxidation treatment on the main side of the substrate 2.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、例えばＴＶや携帯
電話、ＰＨＳ等におけるフィルタ素子や発振子に用いる
ことができる弾性境界波デバイス及びその製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a boundary acoustic wave device that can be used as a filter element or an oscillator in a TV, a portable telephone, a PHS, or the like, and a method of manufacturing the same.

【０００２】[0002]

【従来の技術】弾性波を応用したデバイスの１つとして
弾性表面波デバイス（ＳＡＷデバイス：Ｓｕｒｆａｃｅ
Ａｃｏｕｓｔｉｃ Ｗａｖｅ Ｄｅｖｉｃｅ）が以前
よりよく知られている。このＳＡＷデバイスは、例えば
４５ＭＨｚ〜２ＧＨｚの周波数帯域における無線信号を
処理する装置における各種回路、例えば送信用バンドパ
スフィルタ、受信用バンドパスフィルタ、局発フィル
タ、アンテナ共用器、ＩＦフィルタ、ＦＭ変調器等に用
いられる。2. Description of the Related Art A surface acoustic wave device (SAW device: Surface) is one of devices to which an elastic wave is applied.
Acoustic Wave Devices) are better known than before. This SAW device is, for example, various circuits in a device that processes a radio signal in a frequency band of 45 MHz to 2 GHz, for example, a transmission band-pass filter, a reception band-pass filter, a local oscillation filter, an antenna duplexer, an IF filter, and an FM modulator. Used for etc.

【０００３】図１４にこのＳＡＷデバイスの基本的構成
を示す。同図に示すようにＳＡＷデバイスは、ＬｉＮｂ
Ｏ3 等の圧電性基板１００上にＡｌ薄膜等の金属材料を
エッチング等により加工したくし歯状電極（ＩＤＴ：Ｉ
ｎｔｅｒｄｉｇｉｔａｌ Ｔｒａｎｓｄｕｃｅｒ）１０
１、１０２を設けて構成される。そして、ＩＤＴ１０１
に高周波の電気信号が印加されると圧電性基板１００表
面にＳＡＷ１０３が励振される。励振されたＳＡＷ１０
３は、圧電性基板１００表面を伝搬してＩＤＴ１０２に
達し、ＩＤＴ１０２において再び電気信号に変換され
る。FIG. 14 shows a basic configuration of this SAW device. As shown in the figure, the SAW device is LiNb
A comb-shaped electrode (IDT: I) formed by processing a metal material such as an Al thin film on a piezoelectric substrate 100 such as O 3 by etching or the like.
nterdigital Transducer) 10
1 and 102 are provided. And IDT101
When a high-frequency electric signal is applied to the substrate, the SAW 103 is excited on the surface of the piezoelectric substrate 100. Excited SAW10
3 propagates on the surface of the piezoelectric substrate 100 to reach the IDT 102, where it is converted into an electric signal again.

【０００４】[0004]

【発明が解決しようとする課題】ところで、ＳＡＷデバ
イスは、固体表面と真空または気体の境界面、すなわち
固体表面を伝搬する弾性波を利用するために伝搬媒体で
ある圧電性基板の表面を自由表面とする必要がある。従
って、ＳＡＷデバイスにおいては、例えば半導体のパッ
ケージに使用されるようなプラスチックモールドでチッ
プを覆うことができず、パッケージ内部に自由表面を確
保するための中空部を設ける必要がある。しかしなが
ら、パッケージ内部に中空部を設けた構造にすると、デ
バイスが比較的高価かつ大型になるという問題がある。By the way, the SAW device uses a boundary surface between a solid surface and a vacuum or a gas, that is, a surface of a piezoelectric substrate, which is a propagation medium, in order to use an elastic wave propagating on the solid surface. It is necessary to Therefore, in a SAW device, for example, a chip cannot be covered with a plastic mold used for a semiconductor package, and it is necessary to provide a hollow portion for securing a free surface inside the package. However, a structure in which a hollow portion is provided inside the package has a problem that the device is relatively expensive and large.

【０００５】本発明は、かかる事情に対処し、ＳＡＷデ
バイスと同等の機能を有し、小型化が容易でかつコスト
ダウンが容易な弾性境界波デバイス及びその製造方法を
提供することを目的としている。An object of the present invention is to provide a boundary acoustic wave device which has the same function as a SAW device, can be easily reduced in size, and can be easily reduced in cost, and a method of manufacturing the same. .

【０００６】具体的には、本発明は、プラスチックモー
ルド等でチップを直接覆うことが可能な弾性境界波デバ
イス及びその製造方法を提供することを目的としてい
る。Specifically, an object of the present invention is to provide a boundary acoustic wave device capable of directly covering a chip with a plastic mold or the like, and a method for manufacturing the same.

【０００７】また、本発明は、半導体プロセスをそのま
ま適用して製造することが可能な弾性境界波デバイス及
びその製造方法を提供することを目的としている。Another object of the present invention is to provide a boundary acoustic wave device which can be manufactured by directly applying a semiconductor process, and a method of manufacturing the same.

【０００８】本発明のさらなる目的は、アクティブ素子
等の他の素子を搭載することが可能な弾性境界波デバイ
ス及びその製造方法を提供することにある。A further object of the present invention is to provide a boundary acoustic wave device on which another element such as an active element can be mounted, and a method of manufacturing the same.

【０００９】[0009]

【課題を解決するための手段】かかる課題を解決するた
め、本発明の弾性境界波デバイスは、Ｓｉ系の第１層と
圧電性の第２層とを積層した積層体と、前記第１層と前
記第２層との境界面に沿って弾性波を伝搬させる手段と
を具備する。前記第１層と前記第２層との間に誘電体膜
を設けてもよい。In order to solve the above-mentioned problems, a boundary acoustic wave device according to the present invention comprises: a laminate in which a first Si-based layer and a second piezoelectric layer are laminated; Means for propagating an elastic wave along a boundary between the first layer and the second layer. A dielectric film may be provided between the first layer and the second layer.

【００１０】ここで、第１層及び第２層は、基板等の基
体により構成してもよいし、いずれか一方または両方を
薄膜により構成してもよい。弾性波を伝搬させる手段と
しては、例えば第１層と第２層との間に励振用の対向す
る一対のくし歯状電極と受信用の対向する一対のくし歯
状電極とを配置すればよい。Here, the first layer and the second layer may be composed of a substrate such as a substrate, or one or both of them may be composed of a thin film. As means for propagating the elastic wave, for example, a pair of opposed comb-shaped electrodes for excitation and a pair of opposed comb-shaped electrodes for reception may be arranged between the first layer and the second layer. .

【００１１】本発明の弾性境界波デバイスでは、Ｓｉ系
の第１層と圧電性の第２層との境界面に沿って弾性波を
伝搬させるように構成したことで、ＳＡＷデバイスと同
等の機能を持たせている。また、かかる境界面は、第１
層と第２層との間、すなわち固体と固体とにより挟まれ
たものであるから、ＳＡＷデバイスの如くパッケージ内
部に自由表面を確保するための中空部を設ける必要はな
く、プラスチックモールド等でチップを直接覆うことが
可能となる。さらに、第１層をＳｉ系としたことで、半
導体プロセスをそのまま適用して製造することが可能と
なり、かつこの第１層にアクティブ素子等の他の素子を
搭載することも可能である。Ｓｉ系の第１層を用いるこ
とにより、例えば本来Ｓｉ基板上に形成される集積回路
と当該境界波デバイスを一体化することが可能になり、
プログラマブルなフィルタ回路素子等の機能的なデバイ
スを１チップで構成することができる。The boundary acoustic wave device according to the present invention is configured to propagate an elastic wave along the boundary between the first Si-based layer and the second piezoelectric layer, thereby providing the same function as the SAW device. Have. Also, such a boundary surface is the first
Since it is sandwiched between the layer and the second layer, that is, between solids, it is not necessary to provide a hollow portion for securing a free surface inside the package unlike a SAW device. Can be directly covered. Further, since the first layer is made of a Si-based material, it is possible to manufacture the semiconductor device by applying a semiconductor process as it is, and it is also possible to mount another element such as an active element on the first layer. By using the Si-based first layer, for example, an integrated circuit originally formed on a Si substrate can be integrated with the boundary wave device,
A functional device such as a programmable filter circuit element can be constituted by one chip.

【００１２】すなわち、より具体化した本発明の弾性境
界波デバイスは、Ｓｉ系の第１の基体と、前記第１の基
体に張り合わされた圧電性の第２の基体と、前記第１の
基体と前記第２の基体との間に介挿され、くし歯状の溝
が設けられた誘電体膜と、前記誘電体膜に導電性材料を
埋め込んで構成されるくし歯状電極とを具備する。前記
第１の基体の前記第２の基体との張り合わせ面に露出部
を設け、前記露出部に半導体素子を形成してもよい。前
記第１の基体を１０Ωcm以上の比抵抗のＳｉ系の基板と
してもよい。That is, a more specific boundary acoustic wave device according to the present invention comprises a Si-based first base, a piezoelectric second base bonded to the first base, and the first base. A dielectric film interposed between the first substrate and the second substrate and having a comb-shaped groove, and a comb-shaped electrode formed by embedding a conductive material in the dielectric film. . An exposed portion may be provided on a surface of the first substrate bonded to the second substrate, and a semiconductor element may be formed on the exposed portion. The first substrate may be a Si-based substrate having a specific resistance of 10 Ωcm or more.

【００１３】本発明の弾性境界波デバイスの製造方法
は、Ｓｉ系の第１の基体の主面または圧電性の第２の基
体の主面にくし歯状電極を形成する工程と、前記第１の
基体の主面及び前記第２の基体の主面に水酸基化処理を
施す工程と、前記第１の基体の主面と前記第２の基体の
主面とを対接させる工程と、前記対接された第１の基体
及び第２の基体を１００℃〜１０００℃で加熱する工程
とを具備する。The method of manufacturing a boundary acoustic wave device according to the present invention comprises the steps of: forming a comb-shaped electrode on the main surface of a Si-based first base or the main surface of a piezoelectric second base; Subjecting the main surface of the base and the main surface of the second base to a hydroxylation treatment; the step of bringing the main surface of the first base into contact with the main surface of the second base; Heating the contacted first and second substrates at 100 ° C. to 1000 ° C.

【００１４】本発明によれば、Ｓｉ系の第１の基体と圧
電性の第２の基体とを張り合わせることが可能となる。According to the present invention, it is possible to bond the first Si-based substrate and the second piezoelectric substrate.

【００１５】本発明の弾性境界波デバイスの製造方法
は、Ｓｉ系の第１の基体の主面または圧電性の第２の基
体の主面にくし歯状の溝を有する誘電体膜を形成する工
程と、前記くし歯状の溝に導電性材料を埋め込んでくし
歯状電極を形成する工程と、前記第１の基体の主面と前
記第２の基体の主面とを張り合わせる工程とを具備す
る。 本発明によれば、張り合わされた第１の基体と第
２の基体との間にくし歯状電極を簡単に形成することが
可能である。In the method for manufacturing a boundary acoustic wave device according to the present invention, a dielectric film having comb-shaped grooves is formed on the main surface of a first Si-based substrate or the main surface of a piezoelectric second substrate. A step of forming a comb-shaped electrode by embedding a conductive material in the comb-shaped groove, and a step of bonding the main surface of the first base to the main surface of the second base. Have. ADVANTAGE OF THE INVENTION According to this invention, a comb-shaped electrode can be easily formed between the 1st base | substrate and the 2nd base | substrate which were stuck.

【００１６】[0016]

【発明の実施の形態】以下、本発明の実施形態を図に基
づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

【００１７】図１〜図３は本発明の一実施形態に係る弾
性境界波デバイスの構成を示す図であって、図１は分解
斜視図、図２は正面図、図３は図１のＡ−Ａ矢視平面図
である。1 to 3 are views showing the configuration of a boundary acoustic wave device according to an embodiment of the present invention. FIG. 1 is an exploded perspective view, FIG. 2 is a front view, and FIG. FIG.

【００１８】これらの図に示すように、この弾性境界波
デバイス１は、Ｓｉ系の第１の基板２の主面上にくし歯
状の溝３を有する誘電体膜４を形成すると共にその溝３
に導電性材料を埋め込んでくし歯状電極５を形成し、そ
の上に圧電性の第２の基板６を張り合わせて構成され
る。As shown in these figures, this boundary acoustic wave device 1 forms a dielectric film 4 having a comb-shaped groove 3 on the main surface of a Si-based first substrate 2 and forms the groove. 3
A comb-shaped electrode 5 is formed by embedding a conductive material in the substrate, and a piezoelectric second substrate 6 is laminated thereon.

【００１９】第１の基板２としては、例えばＳｉが用い
られる。しかし、アモルファスシリコンやポリシリコン
等の他のＳｉ系の材料を用いることも可能である。ま
た、Ｓｉ系の第１の基板は、半導体集積回路に通常用い
られているように意図的にｎ−型、ｐ−型として比抵抗
を下げたものではなく、くし歯状電極５による直流的な
漏れを防ぐために１０Ωｃｍ以上の高抵抗のＳｉ系の基
板であることが好ましい。 第２の基板６としては、例
えばＬｉＮｂＯ3 が用いられる。しかし、ＬｉＴａ
Ｏ3 、水晶等の他の圧電性の材料を用いることも可能で
ある。第２の基板６の主面の面積は、第１の基板２の主
面の面積より小さい。例えば、第２の基板６の主面は、
最低限弾性境界波が伝搬するために必要な有効な領域の
みに張り付ければよい。これにより第１の基板２の主面
のうち露出面７に、後述するアクティブ素子等の他の素
子を搭載することが可能である。また、圧電性の第２の
基板６はＳｉ系の第２の基板２と比べ比較的高価である
ことから、圧電体基板材料を少なくできコストダウンを
図ることができる。しかし、第２の基板６の主面の面積
と第１の基板２の主面の面積とを同じものとすることも
可能であるし、第２の基板６の主面の面積を第１の基板
２の主面の面積より大きくすることも可能である。As the first substrate 2, for example, Si is used. However, other Si-based materials such as amorphous silicon and polysilicon can be used. Further, the Si-based first substrate is not intentionally reduced in specific resistance as an n-type or a p-type, as is usually used in a semiconductor integrated circuit, but is a DC-type electrode formed by the interdigital electrode 5. It is preferable that the substrate is a Si-based substrate having a high resistance of 10 Ωcm or more in order to prevent excessive leakage. As the second substrate 6, for example, LiNbO 3 is used. However, LiTa
It is also possible to use other piezoelectric materials such as O 3 and quartz. The area of the main surface of the second substrate 6 is smaller than the area of the main surface of the first substrate 2. For example, the main surface of the second substrate 6
At a minimum, it is sufficient to stick only to an effective area necessary for propagation of the boundary acoustic wave. This makes it possible to mount another element such as an active element described later on the exposed surface 7 of the main surface of the first substrate 2. Further, since the piezoelectric second substrate 6 is relatively expensive as compared with the Si-based second substrate 2, the piezoelectric substrate material can be reduced and the cost can be reduced. However, the area of the main surface of the second substrate 6 and the area of the main surface of the first substrate 2 can be the same, and the area of the main surface of the second substrate 6 can be set to the first area. It is also possible to make the area larger than the area of the main surface of the substrate 2.

【００２０】誘電体膜４は、例えばＳｉＯ2 が用いられ
る。これによりＳｉ系の第１の基板２の主面を酸化処理
するだけでＳｉＯ2 を形成することが可能となる。しか
し、他の誘電体膜４を敢えて形成するようにしてもよ
い。For the dielectric film 4, for example, SiO 2 is used. This makes it possible to form SiO 2 only by oxidizing the main surface of the Si-based first substrate 2. However, another dielectric film 4 may be intentionally formed.

【００２１】くし歯状電極５は、例えばＡｌが用いられ
る。しかし、他の導電性材料を用いることも可能であ
る。くし歯状電極５は、例えば励振用の対向する一対の
くし歯状電極８と受信用の対向する一対のくし歯状電極
９とにより構成される。しかし、これらの電極をそれぞ
れ複数設けてもよい。また、くし歯状電極５の他に例え
ばこれらの電極を挟むように反射電極を設けてもよい。
さらに、こうした電極ばかりでなく、例えばこれらの電
極を挟むように吸音材を形成するようにしてもよい。要
するに、本発明に係る弾性境界波デバイスは、例えば従
来のＳＡＷデバイスに代えて用いられるものであって、
すなわちフィルタ、遅延線、共振器、発振器、アナログ
信号処理用回路、増幅器、コンバルバメモリ等に用いら
れるが、くし歯状電極５等の構成はこれらの用途、仕様
等に応じて適宜設計変更される。The comb-shaped electrode 5 is made of, for example, Al. However, other conductive materials can be used. The interdigital electrode 5 includes, for example, a pair of opposing interdigital electrodes 8 for excitation and a pair of opposing interdigital electrodes 9 for reception. However, a plurality of these electrodes may be provided. Further, in addition to the interdigital electrode 5, for example, a reflective electrode may be provided so as to sandwich these electrodes.
Further, not only these electrodes but also a sound absorbing material may be formed so as to sandwich these electrodes, for example. In short, the boundary acoustic wave device according to the present invention is used, for example, in place of a conventional SAW device,
That is, they are used for filters, delay lines, resonators, oscillators, circuits for analog signal processing, amplifiers, convalver memories, and the like. The configuration of the comb-shaped electrodes 5 and the like is appropriately designed and changed according to these applications, specifications, and the like. You.

【００２２】ところで、弾性境界波は２種の固体間の境
界面を伝搬する弾性波である。この弾性境界波の存在に
関する理論的な検討は、例えば清水、入野等の「ＺｎＯ
とガラスの境界面を伝搬するストンリー波の理論的検
討」学信論（Ｃ），J65-C,11,pp.883-890 により取り扱
われている。この論文では、２種の固体の一方は圧電材
料であるＺｎＯ、もう一方はガラスの組み合わせの場合
が取り扱われているが、２種の固体のうち少なくともど
ちらか一方に弾性波を励振するために圧電性があり２種
の固体の境界面に弾性波のエネルギーが集中して伝搬す
る波を用いて弾性境界波デバイスを実現することができ
る。By the way, a boundary acoustic wave is an elastic wave that propagates on a boundary surface between two types of solids. A theoretical study on the existence of this boundary acoustic wave is described in, for example, "ZnO" by Shimizu and Irino.
Theoretical study of Stoneley waves propagating on the boundary surface between glass and glass ", Gakushin Ron (C), J65-C, 11, pp.883-890. This paper deals with the case where one of the two solids is a combination of piezoelectric material ZnO and the other is a glass, but in order to excite elastic waves to at least one of the two solids, A boundary acoustic wave device can be realized by using a wave which has piezoelectricity and in which the energy of the elastic wave is concentrated and propagates on the boundary surface between the two solids.

【００２３】次に、本発明の弾性境界波デバイスの製造
方法について説明する。Next, a method for manufacturing a boundary acoustic wave device according to the present invention will be described.

【００２４】図４はその製造方法に係る一実施形態を説
明するための図である。FIG. 4 is a view for explaining an embodiment of the manufacturing method.

【００２５】まず、Ｓｉ系の第１の基板７０上に例えば
熱酸化処理により 0.1〜 2μｍ程度のＳｉＯ2 膜７１を
形成する（図４（ａ））。First, an SiO 2 film 71 of about 0.1 to 2 μm is formed on the first Si-based substrate 70 by, for example, thermal oxidation treatment (FIG. 4A).

【００２６】次に、ＳｉＯ2 膜７１に対し、例えばＣＤ
Ε（Cemical Dry Ecthing)によりくし歯状の溝７２をパ
ターニングする（図４（ｂ））。[0026] Next, with respect to the SiO 2 film 71, for example, a CD
The comb-like grooves 72 are patterned by Ε (Chemical Dry Ecthing) (FIG. 4B).

【００２７】次に、ＳｉＯ2 膜７１上を覆うように例え
ばスパッタ法によりＡｌ膜７３を成形する（図４
（ｃ））。Next, an Al film 73 is formed by, for example, a sputtering method so as to cover the SiO 2 film 71 (FIG. 4).
(C)).

【００２８】次に、Αｌ膜７３表面をＳｉＯ2 膜が現れ
るまで研磨する（図４（ｄ））。Next, the surface of the Al film 73 is polished until an SiO 2 film appears (FIG. 4D).

【００２９】これにより、ＳｉＯ2 膜７１の溝７２にΑ
ｌを埋め込んだ電極（くし歯状電極７４）が構成され
る。As a result, the grooves 72 of the SiO 2 film 71
An electrode (comb-shaped electrode 74) in which 1 is embedded is formed.

【００３０】次に、ＳｉＯ2 膜７１とくし歯状電極７４
が形成されたＳｉ系の第１の基板７０の主面及び圧電性
の第２の基板７５の主面を例えば過酸化アンモニア水に
より表面処理することにより、両者の表面を水酸基化す
る（図４（ｅ））。Next, the SiO 2 film 71 and the interdigital electrode 74
By subjecting the main surface of the Si-based first substrate 70 on which is formed and the main surface of the piezoelectric second substrate 75 to surface treatment with, for example, aqueous ammonia peroxide, both surfaces are hydroxylated (FIG. 4). (E)).

【００３１】次に、第１の基板７０の主面と第２の基板
７５の主面とを対接させ、約 300℃で１〜２時間程度加
熱する（図４（ｆ））。Next, the main surface of the first substrate 70 and the main surface of the second substrate 75 are brought into contact with each other and heated at about 300 ° C. for about 1 to 2 hours (FIG. 4F).

【００３２】かかる熱処理により２種の基板表面にある
ＯＨ基同士が結合しＨ2 Ｏが遊離し、異種材料であるＳ
ｉ系の第１の基板７０と第２の基板７５とを直接接合す
ることができる。なお、加熱温度は、好ましくは約 300
℃であるが、 100〜1000℃の間とすることができる。 1
00℃以下ではＯＨ基同士が結合する反応を生じないし、
1000℃以上では要素部材に熱的悪影響を及ぼす可能性が
あるからである。By this heat treatment, the OH groups on the two types of substrates are bonded to each other to release H 2 O, and the different materials S
The i-type first substrate 70 and the second substrate 75 can be directly bonded. The heating temperature is preferably about 300
° C, but can be between 100 and 1000 ° C. 1
At a temperature of 00 ° C or lower, a reaction in which OH groups are bonded does not occur,
If the temperature is higher than 1000 ° C., there is a possibility that the element members are adversely affected by heat.

【００３３】このように異種材料間の直接接合が可能で
あることは江田等：「圧電材料の直接接合」信学技報US
95-24.ΕＭＤ95-20,ＣＰＭ95-32.(1995-07),pp.31-38に
も報告されている。Ｓｉ系の第１の基板と圧電性の第２
の基板とは上記以外の方法でも前記江田等の報告にある
ように容易に接合することが可能である。The fact that such a direct bonding between different materials is possible is described in Eda et al .: "Direct bonding of piezoelectric materials", IEICE Technical Report.
95-24.ΕMD95-20, CPM95-32. (1995-07), pp. 31-38. Si-based first substrate and piezoelectric second substrate
The substrate can be easily bonded by a method other than the above as described in the report by Eda et al.

【００３４】以上の製造工程を経て形成された弾性境界
波デバイスでは、境界波を励振するためのくし歯型電極
７４をＳｉ系の第１の基板７０上に形成することができ
るため通常の半導体デバイスの製造技術をそのまま転用
することができる。In the boundary acoustic wave device formed through the above-described manufacturing process, the comb-shaped electrode 74 for exciting the boundary wave can be formed on the first substrate 70 made of Si. The device manufacturing technology can be diverted as it is.

【００３５】なお、上記製造方法では、ＳｉＯ2 膜７１
とくし歯状電極７４を予めＳｉ系の第１の基板７０に形
成する例を示したが、ＳｉＯ2 膜７１とくし歯状電極７
４を圧電性の第２の基板７５上に予め形成し、Ｓｉ系の
第１の基板７０と直接張り付ける方法でも同様の構造の
弾性境界波デバイスを製造することができる。In the above manufacturing method, the SiO 2 film 71
Although the example in which the interdigital electrode 74 is formed in advance on the Si-based first substrate 70 has been described, the SiO 2 film 71 and the interdigital electrode 7 are formed.
A boundary acoustic wave device having a similar structure can also be manufactured by a method in which the substrate 4 is formed in advance on the piezoelectric second substrate 75 and directly attached to the Si-based first substrate 70.

【００３６】また、本発明の弾性境界波デバイスにおけ
るくし歯型電極のその他の構成方法を図５に示す。FIG. 5 shows another method of forming the interdigital electrode in the boundary acoustic wave device according to the present invention.

【００３７】まず、Ｓｉ系の第１の基板８０上にイオン
ミリング等の加工により 0.1〜 2μｍ程度のくし歯状の
溝８１を形成する（図５（ａ））。First, a comb-shaped groove 81 of about 0.1 to 2 μm is formed on a first Si-based substrate 80 by processing such as ion milling (FIG. 5A).

【００３８】次に、溝８１を覆うように第１の基板８０
上にＡｌ膜８２を例えばスパッタ法により形成する（図
５（ｂ））。Next, the first substrate 80 is covered so as to cover the groove 81.
An Al film 82 is formed thereon by, for example, a sputtering method (FIG. 5B).

【００３９】次に、Ａｌ膜８２の表面を第１の基板８０
表面が現れるまで研磨する（図５（ｃ））。Next, the surface of the Al film 82 is
Polish until the surface appears (FIG. 5 (c)).

【００４０】これにより、第１の基板８０表面の溝８１
にΑｌを埋め込んだ電極（くし歯状電極８３）が構成さ
れる。Thus, the groove 81 on the surface of the first substrate 80
(Comb-shaped electrode 83) is formed.

【００４１】上述した実施形態においては、第１層及び
第２層をそれぞれ基板の形態としていたが、第１層及び
第２層のうちいずれか一方または両方を薄膜としても構
わない。In the above-described embodiment, the first layer and the second layer are each in the form of a substrate, but one or both of the first layer and the second layer may be formed as a thin film.

【００４２】図６は、Ｓｉ系の第１層を基板の形態であ
るＳｉ基板９１とし、その上に圧電性の第２層として圧
電性薄膜９２を形成した弾性境界波デバイスを示してい
る。図示を省略しているが、Ｓｉ基板９１と圧電性薄膜
９２との間には、くし歯状電極が形成されている。FIG. 6 shows a boundary acoustic wave device in which a first Si-based layer is used as a Si substrate 91 in the form of a substrate, and a piezoelectric thin film 92 is formed thereon as a second piezoelectric layer. Although not shown, a comb-shaped electrode is formed between the Si substrate 91 and the piezoelectric thin film 92.

【００４３】図７は、圧電性の第２層を基板の形態であ
る圧電性基板１１とし、その上にＳｉ系の第１層として
Ｓｉ薄膜１２、例えばポリシリコンを形成した弾性境界
波デバイスを示している。図示を省略しているが、圧電
性基板１１とＳｉ薄膜１２との間には、くし歯状電極が
形成されている。FIG. 7 shows a boundary acoustic wave device in which a second piezoelectric layer is a piezoelectric substrate 11 in the form of a substrate, and a Si thin film 12, for example, polysilicon is formed thereon as a first Si-based layer. Is shown. Although not shown, interdigital electrodes are formed between the piezoelectric substrate 11 and the Si thin film 12.

【００４４】図８は、第１層及び第２層の両方を薄膜と
した弾性境界波デバイスを示しており、ここでは支持基
体としてのガラス基板１１０上にＳｉ系の第１層として
Ｓｉ薄膜１１１を形成し、その上に圧電性の第２層とし
て圧電性薄膜１１２を形成して構成される。図示を省略
しているが、Ｓｉ薄膜１１１と圧電性薄膜１１２との間
には、くし歯状電極が形成されている。また、圧電性薄
膜の上にＳｉ薄膜を形成するようにしてもよい。FIG. 8 shows a boundary acoustic wave device in which both the first layer and the second layer are thin films. Here, a Si thin film 111 as a first Si-based layer is formed on a glass substrate 110 as a supporting base. Is formed, and a piezoelectric thin film 112 is formed thereon as a piezoelectric second layer. Although not shown, a comb-like electrode is formed between the Si thin film 111 and the piezoelectric thin film 112. Further, a Si thin film may be formed on the piezoelectric thin film.

【００４５】なお、Ｓｉ薄膜と圧電性薄膜のいずれも弾
性境界波を伝搬させるためには１λ以上の厚さとする必
要がある。In order to propagate boundary acoustic waves, both the Si thin film and the piezoelectric thin film need to have a thickness of 1λ or more.

【００４６】次に、Ｓｉ系の第１の基板にアクティブ素
子等の他の素子を搭載した例を示す。 図９はその一例
を示しており、Ｓｉ系の第１の基板１２０主面の第１の
領域１２１には、くし歯状電極（図示せず）が形成さ
れ、これを覆うように圧電性の第２の基板１２２が張り
合わされている。第１の基板１２０主面の露出領域であ
る第２の領域１２３には、集積回路１２４が形成されて
いる。これにより、例えばプログラマブルなフィルタ回
路素子等の機能的なデバイスを１チップで構成すること
ができるようになる。Next, an example in which another element such as an active element is mounted on a first Si-based substrate will be described. FIG. 9 shows an example of the above. A comb-shaped electrode (not shown) is formed in a first region 121 of the main surface of a Si-based first substrate 120, and a piezoelectric electrode is formed so as to cover the electrode. A second substrate 122 is attached. An integrated circuit 124 is formed in a second region 123 that is an exposed region of the main surface of the first substrate 120. Thereby, for example, a functional device such as a programmable filter circuit element can be constituted by one chip.

【００４７】図１０及び図１１は図９に示した弾性境界
波デバイスをプリント配線板上に実装した例をそれぞれ
示している。FIGS. 10 and 11 show examples in which the boundary acoustic wave device shown in FIG. 9 is mounted on a printed wiring board.

【００４８】図１０に示すように、弾性境界波デバイス
１３１の第１の基板１３２主面の第２の領域１３３に
は、ボンディングパッド１３４が形成されている。プリ
ント配線板１３５上の所定の位置にこの弾性境界波デバ
イス１３１が搭載され、弾性境界波デバイス１３１のボ
ンディングパッド１３４とプリント配線板１３５上の所
定の位置に設けられたボンディングパッド１３６とがボ
ンディングワイヤ１３７により接続されている。そし
て、これらを覆うようにポリイミドやエポキシ樹脂等に
より樹脂封止１３８がされている。As shown in FIG. 10, a bonding pad 134 is formed in the second region 133 on the main surface of the first substrate 132 of the boundary acoustic wave device 131. The boundary acoustic wave device 131 is mounted at a predetermined position on the printed wiring board 135, and a bonding pad 134 of the boundary acoustic wave device 131 and a bonding pad 136 provided at a predetermined position on the printed wiring board 135 are bonded to each other. 137. A resin seal 138 is made of polyimide, epoxy resin, or the like so as to cover them.

【００４９】また、図１１は別の例であり、同図に示す
ように、弾性境界波デバイス１４１の第１の基板１４２
には主面回路部より裏面のパッド１４３に通じるスルー
ホール１４４が形成されている。プリント配線板１４５
上の所定の位置にこの弾性境界波デバイス１４１が搭載
され、弾性境界波デバイス１４１のパッド１４３とプリ
ント配線板１４５上の所定の位置に設けられたパッド１
４６とがバンプ１４７により接続されている。そして、
これらを覆うようにポリイミドやエポキシ樹脂等により
樹脂封止１４８がされている。FIG. 11 shows another example. As shown in FIG. 11, a first substrate 142 of a boundary acoustic wave device 141 is provided.
Is formed with a through-hole 144 that extends from the main surface circuit portion to the pad 143 on the back surface. Printed wiring board 145
The boundary acoustic wave device 141 is mounted at a predetermined position on the upper surface, and the pad 143 of the boundary acoustic wave device 141 and the pad 1 provided at a predetermined position on the printed wiring board 145 are arranged.
46 are connected by bumps 147. And
A resin seal 148 is made of polyimide, epoxy resin or the like so as to cover them.

【００５０】本発明に係る弾性境界波デバイスは、例え
ばフィルタ、遅延線、共振器、発振器、アナログ信号処
理用回路、増幅器、コンバルバメモリ等に用いられる。
そして、これらの弾性境界波デバイスを備えたフィル
タ、遅延線、共振器等は、携帯電話、ＰＨＳ、ＴＶ等に
用いられる。The boundary acoustic wave device according to the present invention is used for, for example, a filter, a delay line, a resonator, an oscillator, a circuit for analog signal processing, an amplifier, a convalver memory, and the like.
Filters, delay lines, resonators, and the like provided with these boundary acoustic wave devices are used in mobile phones, PHSs, TVs, and the like.

【００５１】図１２は携帯電話、ＰＨＳ等の移動体通信
装置の構成を示すブロック図である。 同図に示すよう
に、アンテナ１５１を介して受信した受信波は、アンテ
ナ共用器１５２により受信系に分離される。分離された
受信信号は、アンプ１５３により増幅された後、受信用
バンドパスフィルタ１５４により所望の帯域が抽出さ
れ、ミキサ１５５に入力される。ミキサ１５５には、Ｐ
ＬＬ発振器１５６により発振された局発信号が局発フィ
ルタ１５７を介して入力されている。ミキサ１５５の出
力は、ＩＦフィルタ１５８、ＦＭ復調器１５９を介して
スピーカ１６０より受信音として出力される。一方、マ
イク１６１より入力された送話音は、ＦＭ変調器１６２
を介してミキサ１６３に入力される。ミキサ１６３に
は、ＰＬＬ発振器１６４により発振された局発信号が入
力されている。ミキサ１６３の出力は、送信用バンドパ
スフィルタ１６５、パワーアンプ１６６及びアンテナ共
用器１５２を介してアンテナ１５１より送信波として出
力される。FIG. 12 is a block diagram showing the configuration of a mobile communication device such as a mobile phone or a PHS. As shown in the figure, a received wave received via an antenna 151 is separated by an antenna duplexer 152 into a receiving system. The separated reception signal is amplified by an amplifier 153, a desired band is extracted by a reception band-pass filter 154, and input to a mixer 155. Mixer 155 includes P
The local oscillation signal oscillated by the LL oscillator 156 is input via the local oscillation filter 157. The output of the mixer 155 is output as received sound from the speaker 160 via the IF filter 158 and the FM demodulator 159. On the other hand, the transmission sound input from the microphone 161 is transmitted to the FM modulator 162
Is input to the mixer 163 via the. The local signal oscillated by the PLL oscillator 164 is input to the mixer 163. The output of the mixer 163 is output as a transmission wave from the antenna 151 via the transmission band-pass filter 165, the power amplifier 166, and the antenna duplexer 152.

【００５２】本発明に係る弾性境界波デバイスは、この
移動通信装置の各部に使用することができる。例えば、
送信用バンドパスフィルタ１６５、受信用バンドパスフ
ィルタ１５４、局発フィルタ１５７及びアンテナ共用器
１５２には、本発明に係る弾性境界波デバイスがＲＦ段
のフィルタとして使われる。ＩＦフィルタ１５８には、
本発明に係る弾性境界波デバイスがチャネル選局に不可
欠な狭帯域のＩＦ段のフィルタとして使われる。ＦＭ変
調器１６２には、本発明に係る弾性境界波デバイスが音
声のＦＭ変調における共振子として使われる。The boundary acoustic wave device according to the present invention can be used for each part of the mobile communication device. For example,
The boundary acoustic wave device according to the present invention is used as an RF stage filter for the transmission bandpass filter 165, the reception bandpass filter 154, the local oscillation filter 157, and the antenna duplexer 152. IF filter 158 includes
The boundary acoustic wave device according to the present invention is used as a narrow-band IF stage filter that is indispensable for channel selection. As the FM modulator 162, the boundary acoustic wave device according to the present invention is used as a resonator in FM modulation of sound.

【００５３】本発明に係る弾性境界波デバイスは、ＶＴ
ＲやＣＡＴＶに用いられるＲＦモジュレータの発振回路
等にも用いることができる。その回路構成を図１３に示
す。図９に示したＳｉ系の第１の基板１２０主面の第１
の領域１２１にくし歯状電極１６７を形成し、第２の領
域１２３に回路部１６８を形成することで、この発振回
路を１チップで構成することができる。The boundary acoustic wave device according to the present invention has a VT
It can also be used for an oscillation circuit of an RF modulator used for R or CATV. FIG. 13 shows the circuit configuration. The first surface of the Si-based first substrate 120 shown in FIG.
By forming the interdigital electrode 167 in the region 121 and forming the circuit portion 168 in the second region 123, this oscillation circuit can be formed by one chip.

【００５４】[0054]

【発明の効果】以上詳述したように、本発明の弾性境界
波デバイスによれば、ＳＡＷデバイスと同等の機能を有
し、プラスチックモールド等でチップを直接覆うことが
可能となり、さらに半導体プロセスをそのまま適用して
製造することが可能となりかつアクティブ素子等の他の
素子を搭載することも可能となる。As described above in detail, according to the boundary acoustic wave device of the present invention, it has a function equivalent to that of a SAW device, and can directly cover a chip with a plastic mold or the like. It is possible to manufacture the device by applying it as it is, and it is also possible to mount another device such as an active device.

【００５５】また、本発明の弾性境界波デバイスの製造
方法によれば、Ｓｉ系の第１の基体の主面または圧電性
の第２の基体の主面にくし歯状電極を形成し、前記第１
の基体の主面及び前記第２の基体の主面に水酸基化処理
を施し、前記第１の基体の主面と前記第２の基体の主面
とを対接し、前記対接された第１の基体及び第２の基体
を１００℃〜１０００℃で加熱するようにしたことで、
Ｓｉ系の第１の基体と圧電性の第２の基体とを張り合わ
せることが可能となる。Further, according to the method of manufacturing a boundary acoustic wave device of the present invention, a comb-shaped electrode is formed on the main surface of the first Si-based substrate or the main surface of the piezoelectric second substrate. First
Performing a hydroxylation treatment on the main surface of the substrate and the main surface of the second substrate to bring the main surface of the first substrate into contact with the main surface of the second substrate; By heating the substrate and the second substrate at 100 ° C. to 1000 ° C.,
It is possible to bond the first Si-based substrate and the second piezoelectric substrate.

【００５６】さらに、本発明の他の弾性境界波デバイス
の製造方法によれば、Ｓｉ系の第１の基体の主面または
圧電性の第２の基体の主面にくし歯状の溝を有する誘電
体膜を形成し、前記くし歯状の溝に導電性材料を埋め込
んでくし歯状電極を形成し、前記第１の基体の主面と前
記第２の基体の主面とを張り合わすようにしたことで、
張り合わされた第１の基体と第２の基体との間にくし歯
状電極を簡単に形成することが可能となる。Further, according to another method of manufacturing a boundary acoustic wave device according to the present invention, the main surface of the Si-based first base or the main surface of the piezoelectric second base has comb-shaped grooves. A dielectric film is formed, a conductive material is buried in the comb-shaped groove to form a comb-shaped electrode, and the main surface of the first base and the main surface of the second base are bonded to each other. By doing
A comb-shaped electrode can be easily formed between the bonded first and second substrates.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施形態に係る弾性境界波デバイス
の構成を示す分解斜視図である。FIG. 1 is an exploded perspective view showing a configuration of a boundary acoustic wave device according to an embodiment of the present invention.

【図２】図１の正面図である。FIG. 2 is a front view of FIG.

【図３】図２のＡ−Ａ矢視平面図である。FIG. 3 is a plan view taken along the line AA of FIG. 2;

【図４】本発明の弾性境界波デバイスの製造方法に係る
一実施形態を説明するための工程図である。FIG. 4 is a process chart for explaining one embodiment of a method for manufacturing a boundary acoustic wave device according to the present invention.

【図５】本発明の弾性境界波デバイスにおけるくし歯型
電極の他の構成方法を示す工程図である。FIG. 5 is a process chart showing another method of configuring the interdigital electrode in the boundary acoustic wave device of the present invention.

【図６】本発明の弾性境界波デバイスの他の実施形態を
示す正面図である。FIG. 6 is a front view showing another embodiment of the boundary acoustic wave device of the present invention.

【図７】本発明の弾性境界波デバイスの他の実施形態を
示す正面図である。FIG. 7 is a front view showing another embodiment of the boundary acoustic wave device of the present invention.

【図８】本発明の弾性境界波デバイスの他の実施形態を
示す正面図である。FIG. 8 is a front view showing another embodiment of the boundary acoustic wave device of the present invention.

【図９】本発明の弾性境界波デバイスの他の実施形態を
示す斜視図である。FIG. 9 is a perspective view showing another embodiment of the boundary acoustic wave device of the present invention.

【図１０】本発明の弾性境界波デバイスをプリント配線
板上に実装した例を示す正面図である。FIG. 10 is a front view showing an example in which the boundary acoustic wave device of the present invention is mounted on a printed wiring board.

【図１１】本発明の弾性境界波デバイスをプリント配線
板上に実装した他の例を示す正面図である。FIG. 11 is a front view showing another example in which the boundary acoustic wave device of the present invention is mounted on a printed wiring board.

【図１２】本発明の弾性境界波デバイスが用いられる移
動体通信装置の構成を示すブロック図である。FIG. 12 is a block diagram showing a configuration of a mobile communication device using the boundary acoustic wave device of the present invention.

【図１３】本発明の弾性境界波デバイスが用いられるＲ
Ｆモジュレータの発振回路の回路図である。FIG. 13 is a graph showing the relationship between the boundary acoustic wave device and the boundary acoustic wave device according to the present invention
FIG. 3 is a circuit diagram of an oscillation circuit of the F modulator.

【図１４】ＳＡＷデバイスの基本的構成を示す斜視図で
ある。FIG. 14 is a perspective view showing a basic configuration of a SAW device.

【符号の説明】[Explanation of symbols]

１ 弾性境界波デバイス ２ Ｓｉ系の第１の基板 ３ くし歯状の溝 ４ 誘電体膜 ５ くし歯状電極 ６ 圧電性の第２の基板 ７ 露出面 REFERENCE SIGNS LIST 1 boundary acoustic wave device 2 Si-based first substrate 3 comb-shaped groove 4 dielectric film 5 comb-shaped electrode 6 piezoelectric second substrate 7 exposed surface

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】 Ｓｉ系の第１層と圧電性の第２層とを積
層した積層体と、 前記第１層と前記第２層との境界面に沿って弾性波を伝
搬させる手段とを具備することを特徴とする弾性境界波
デバイス。1. A laminate comprising a first Si-based layer and a second piezoelectric layer, and means for propagating an elastic wave along a boundary between the first layer and the second layer. A boundary acoustic wave device comprising: 【請求項２】 前記第１層と前記第２層との間に誘電体
膜を有することを特徴とする請求項１記載の弾性境界波
デバイス。2. The boundary acoustic wave device according to claim 1, further comprising a dielectric film between said first layer and said second layer. 【請求項３】 Ｓｉ系の第１の基体と、 前記第１の基体に張り合わされた圧電性の第２の基体
と、 前記第１の基体と前記第２の基体との間に介挿され、く
し歯状の溝が設けられた誘電体膜と、 前記誘電体膜に導電性材料を埋め込んで構成されるくし
歯状電極とを具備することを特徴とする弾性境界波デバ
イス。3. A Si-based first base, a piezoelectric second base adhered to the first base, and interposed between the first base and the second base. A boundary acoustic wave device comprising: a dielectric film provided with comb-shaped grooves; and a comb-shaped electrode formed by embedding a conductive material in the dielectric film. 【請求項４】 前記第１の基体の前記第２の基体との張
り合わせ面に露出部を有し、前記露出部に回路が形成さ
れていることを特徴とする請求項３記載の弾性境界波デ
バイス。4. The boundary acoustic wave according to claim 3, wherein an exposed portion is provided on a surface of the first base bonded to the second base, and a circuit is formed on the exposed portion. device. 【請求項５】 前記第１の基体が、１０Ωcm以上の比抵
抗のＳｉ系の基板であることを特徴とする請求項３記載
の弾性境界波デバイス。5. The boundary acoustic wave device according to claim 3, wherein the first substrate is a Si-based substrate having a specific resistance of 10 Ωcm or more. 【請求項６】 Ｓｉ系の第１の基体の主面または圧電性
の第２の基体の主面にくし歯状電極を形成する工程と、 前記第１の基体の主面及び前記第２の基体の主面に水酸
基化処理を施す工程と、 前記第１の基体の主面と前記
第２の基体の主面とを対接させる工程と、 前記対接された第１の基体及び第２の基体を加熱する工
程とを具備することを特徴とする弾性境界波デバイスの
製造方法。6. A step of forming a comb-shaped electrode on a main surface of a Si-based first base or a main surface of a piezoelectric second base; and a main surface of the first base and the second base. Performing a hydroxylation treatment on the main surface of the substrate, bringing the main surface of the first substrate into contact with the main surface of the second substrate, and contacting the first and second substrates with each other. And heating the substrate. 【請求項７】 Ｓｉ系の第１の基体の主面または圧電性
の第２の基体の主面にくし歯状の溝を有する誘電体膜を
形成する工程と、 前記くし歯状の溝に導電性材料を埋め込んでくし歯状電
極を形成する工程と、 前記第１の基体の主面と前記第２の基体の主面とを張り
合わせる工程とを具備することを特徴とする弾性境界波
デバイスの製造方法。7. A step of forming a dielectric film having a comb-shaped groove on a main surface of a Si-based first base or a main surface of a piezoelectric second base; A boundary acoustic wave comprising: a step of forming a comb-shaped electrode by embedding a conductive material; and a step of bonding a main surface of the first base to a main surface of the second base. Device manufacturing method.
JP23787696A 1996-09-09 1996-09-09 Boundary acoustic wave device and manufacturing method thereof Expired - Lifetime JP3779389B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23787696A JP3779389B2 (en) 1996-09-09 1996-09-09 Boundary acoustic wave device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23787696A JP3779389B2 (en) 1996-09-09 1996-09-09 Boundary acoustic wave device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH1084246A true JPH1084246A (en) 1998-03-31
JP3779389B2 JP3779389B2 (en) 2006-05-24

Family

ID=17021735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23787696A Expired - Lifetime JP3779389B2 (en) 1996-09-09 1996-09-09 Boundary acoustic wave device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP3779389B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004096677A (en) * 2002-09-04 2004-03-25 Fujitsu Media Device Kk Surface acoustic wave element, filtering apparatus and manufacturing method thereof
WO2004095699A1 (en) * 2003-04-18 2004-11-04 Murata Manufacturing Co., Ltd. Elastic boundary wave device
WO2007010663A1 (en) 2005-07-22 2007-01-25 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
WO2008044411A1 (en) * 2006-10-12 2008-04-17 Murata Manufacturing Co., Ltd. Elastic boundary-wave device
WO2008110571A1 (en) * 2007-03-14 2008-09-18 Epcos Ag Component operated by guided acoustic waves and electric module comprising said component
US8099853B2 (en) 2007-01-19 2012-01-24 Murata Manufacturing Co., Ltd. Method for manufacturing boundary acoustic wave device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004096677A (en) * 2002-09-04 2004-03-25 Fujitsu Media Device Kk Surface acoustic wave element, filtering apparatus and manufacturing method thereof
US7067956B2 (en) 2002-09-04 2006-06-27 Fujitsu Media Devices Limited Surface acoustic wave device, filter device and method of producing the surface acoustic wave device
WO2004095699A1 (en) * 2003-04-18 2004-11-04 Murata Manufacturing Co., Ltd. Elastic boundary wave device
US7453184B2 (en) 2003-04-18 2008-11-18 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
WO2007010663A1 (en) 2005-07-22 2007-01-25 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
US7489064B2 (en) 2005-07-22 2009-02-10 Murata Manufacturing Co., Ltd Boundary acoustic wave device
WO2008044411A1 (en) * 2006-10-12 2008-04-17 Murata Manufacturing Co., Ltd. Elastic boundary-wave device
US7888841B2 (en) 2006-10-12 2011-02-15 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
JP4793448B2 (en) * 2006-10-12 2011-10-12 株式会社村田製作所 Boundary acoustic wave device
US8099853B2 (en) 2007-01-19 2012-01-24 Murata Manufacturing Co., Ltd. Method for manufacturing boundary acoustic wave device
WO2008110571A1 (en) * 2007-03-14 2008-09-18 Epcos Ag Component operated by guided acoustic waves and electric module comprising said component

Also Published As

Publication number Publication date
JP3779389B2 (en) 2006-05-24

Similar Documents

Publication Publication Date Title
KR100301322B1 (en) Surface acoustic wave device and manufacturing method thereof
US7224101B2 (en) Elastic boundary wave device and method of manufacturing the same
US6426583B1 (en) Surface acoustic wave element, method for producing the same and surface acoustic wave device using the same
JP4385607B2 (en) Surface acoustic wave device, frequency filter, oscillator, electronic circuit and electronic equipment
KR20010083777A (en) Device with acoustic waves guided in a fine piezoelectric material film bonded with a molecular bonding on a bearing substrate and method for making same
JP7374658B2 (en) Radio frequency filters, electronic equipment modules, acoustic wave devices and electronic devices
JP3913700B2 (en) Surface acoustic wave device and manufacturing method thereof
JP3702050B2 (en) Boundary acoustic wave device
JP2001060846A (en) Surface acoustic wave element, its manufacturing method and surface acoustic wave device using the same
JP3779389B2 (en) Boundary acoustic wave device and manufacturing method thereof
JPH0746072A (en) Manufacture of crystal resonator
JP4078562B2 (en) Piezoelectric thin film resonator manufacturing method, piezoelectric thin film resonator, frequency filter, oscillator manufacturing method, oscillator, electronic circuit, and electronic device
JPH10107078A (en) Manufacture of electronic parts and electronic parts
CN111371429B (en) Method and structure for integrating control circuit and acoustic wave filter
JPH0832402A (en) Surface acoustic wave device, branching filter for mobile radio equipment and mobile radio equipment
JP4693397B2 (en) Thin film bulk acoustic wave resonator and filter, and communication device
WO2020134666A1 (en) Integrated method and integrated structure of control circuit and surface acoustic wave filter
JP5185004B2 (en) Boundary acoustic wave device, method for manufacturing the same, and method for manufacturing duplexer
CN213186064U (en) Radio frequency device
US20230013597A1 (en) Multilayer piezoelectric substrate with reduced side leakage and transverse mode suppression
JP7465515B1 (en) Acoustic Wave Devices
US20230031568A1 (en) Acoustic wave resonator with reduced size
JPH0758586A (en) High frequency circuit device
CN111917394A (en) Acoustic wave device, method of manufacturing acoustic wave device, and related device
JPH06237142A (en) Surface acoustic wave element

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050527

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050712

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060228

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060302

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100310

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100310

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110310

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120310

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130310

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130310

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140310

Year of fee payment: 8

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term