JPH1065132A - Semiconductor image pickup device - Google Patents

Semiconductor image pickup device

Info

Publication number
JPH1065132A
JPH1065132A JP8214438A JP21443896A JPH1065132A JP H1065132 A JPH1065132 A JP H1065132A JP 8214438 A JP8214438 A JP 8214438A JP 21443896 A JP21443896 A JP 21443896A JP H1065132 A JPH1065132 A JP H1065132A
Authority
JP
Japan
Prior art keywords
imaging device
package
light
image
pinhole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8214438A
Other languages
Japanese (ja)
Inventor
Masayoshi Kanazawa
雅義 金沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8214438A priority Critical patent/JPH1065132A/en
Priority to US08/855,637 priority patent/US6795120B2/en
Priority to EP06014846.7A priority patent/EP1715524B1/en
Priority to EP06014847A priority patent/EP1715525B1/en
Priority to EP06014848.3A priority patent/EP1715526B1/en
Priority to EP97107881A priority patent/EP0807976B1/en
Priority to DE69739498T priority patent/DE69739498D1/en
Priority to DE69739708T priority patent/DE69739708D1/en
Publication of JPH1065132A publication Critical patent/JPH1065132A/en
Priority to US10/891,633 priority patent/US8098309B2/en
Priority to US13/213,777 priority patent/US8564702B2/en
Priority to US14/032,366 priority patent/US20140042578A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Cameras In General (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor image pickup device constituted using simple structure by providing the image pickup device with a package that houses an image pickup element and a pin hole that captures the light to be picked up into a dark space and forms the image of an object, the image of which is to be picked up on the image pickup face of the image pickup element. SOLUTION: In a semiconductor image pickup device 31, the opening in its package 21 is sealed with a shielding material 25, and the interior of the package 21 is thereby turned into a dark space 21a. The dark space 21a is so designed that external light can be captured into the dark space through a pin hole 27 formed in the shielding material 25. The light from an object A the image of which is to be picked up is captured in through the pin hole 27, and the image is formed on the image pickup face of an image pickup element 23 by the image forming action of the pin hole 27. That is, the semiconductor imaging device 31 is capable of forming the image of light picked up using the pin hole 27, in place of a lens, by the principle of pin-hole camera. This obviates a lens and an iris, and enables reducing the number of parts and simplifying the device construction.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、被撮像光を内部に
取り込み結像した像を撮像素子によって光電変換する半
導体撮像装置に関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor imaging device in which light to be imaged is taken in and an image formed by the imaging is photoelectrically converted by an imaging device.

【０００２】[0002]

【従来の技術】従来、電子カメラなどに搭載する半導体
撮像装置には、撮像対象の像を結ばせるためのレンズを
設けてある。図８は従来の半導体撮像装置を示す断面図
である。パッケージ１は撮像素子（ＣＣＤ）３を内設
し、撮像素子３を外部環境から保護している。パッケー
ジ１には被撮像光を取り込む開口を形成してあり、開口
にはカバーガラス５を設けてある。パッケージ１には撮
像素子３から電気信号を取り出すリード７を導出してあ
り、リード７は同時にパッケージ１をケース９の内部に
固定している。2. Description of the Related Art Conventionally, a semiconductor imaging device mounted on an electronic camera or the like is provided with a lens for forming an image of an object to be imaged. FIG. 8 is a sectional view showing a conventional semiconductor imaging device. The package 1 has an image pickup device (CCD) 3 therein, and protects the image pickup device 3 from an external environment. An opening for taking in light to be imaged is formed in the package 1, and a cover glass 5 is provided in the opening. A lead 7 for extracting an electric signal from the image sensor 3 is led out to the package 1, and the lead 7 simultaneously fixes the package 1 inside the case 9.

【０００３】ケース９にはカバーガラス５に対して光軸
が垂直なレンズ１１を設けてあり、レンズ１１は撮像対
象からの被撮像光を撮像素子３の撮像面で結像する。ま
た、ケース９にはレンズ１１とカバーガラス５との間に
絞り１３を設けてあり、絞り１３はレンズ１１からの光
量を調節する。The case 9 is provided with a lens 11 whose optical axis is perpendicular to the cover glass 5, and the lens 11 forms light to be imaged from an object to be imaged on an imaging surface of the imaging element 3. The case 9 is provided with a stop 13 between the lens 11 and the cover glass 5. The stop 13 adjusts the amount of light from the lens 11.

【０００４】このように構成した従来の半導体撮像装置
１５は、レンズ１１を介して取り込んだ被撮像光を撮像
素子３の撮像面で結像し、その像を光電変換することで
電気信号として出力することができた。[0004] The conventional semiconductor imaging device 15 configured as described above forms an image on the imaging surface of the imaging device 3 with the imaged light taken in through the lens 11 and outputs the image as an electric signal by photoelectrically converting the image. We were able to.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、上述し
た従来の半導体撮像装置１５は、レンズ１１を用いて被
撮像光を結像させていたため、レンズ１１及び光量調節
のための絞り１３を設ける必要があり、部品点数が増
え、構造が複雑になる欠点を有していた。そして、この
ことは、装置を小型化する上での障害ともなっていた。
また、レンズ１１、絞り１３、撮像素子３を光軸上で高
精度に配設しなければならないため、組付け性の悪い欠
点があった。更に、これら複数部品を高精度に保持しな
ければならないことから、取扱いが容易でない欠点もあ
った。そして、これらの不具合は、同時に装置の製造コ
ストを増大させる要因ともなっていた。本発明は上記状
況に鑑みてなされたもので、部品点数が少なく、簡単な
構造で構成することのできる半導体撮像装置を提供し、
小型化、取扱いの簡便化、製造コストの低減を図ること
を目的とする。However, in the conventional semiconductor imaging device 15 described above, since the light to be imaged is imaged using the lens 11, it is necessary to provide the lens 11 and the aperture 13 for adjusting the amount of light. There is a drawback that the number of parts increases and the structure becomes complicated. This has been an obstacle to downsizing the device.
In addition, since the lens 11, the aperture 13, and the imaging device 3 must be arranged with high accuracy on the optical axis, there is a disadvantage that the assembling property is poor. Furthermore, since these parts must be held with high precision, there is a drawback that handling is not easy. These inconveniences also increase the manufacturing cost of the device. The present invention has been made in view of the above circumstances, and provides a semiconductor imaging device that has a small number of parts and can be configured with a simple structure.
It is intended to reduce the size, simplify the handling, and reduce the manufacturing cost.

【０００６】[0006]

【課題を解決するための手段】上記目的を達成するため
の本発明に係る半導体撮像装置の構成は、被撮像光を内
部に取り込み結像した像を撮像素子によって光電変換す
る半導体撮像装置において、内部に暗空間を形成し該暗
空間に前記撮像素子を内設するパッケージと、前記被撮
像光を前記暗空間に取り込み前記撮像素子の撮像面に撮
像対象の像を結像させるピンホールとを具備したことを
特徴とするものである。また、半導体撮像装置は、開口
を形成したパッケージに前記撮像素子を内設し、前記ピ
ンホールを形成した遮光材をパッケージカバーガラスに
貼着し、該パッケージカバーガラスを用いて前記パッケ
ージの開口を塞いだことを特徴とするものであってもよ
い。更に、半導体撮像装置は、カバーケース及びパッケ
ージで前記暗空間を形成し、該カバーケースに開口を形
成し、該開口の外側又は内側のいずれか一方をカバーガ
ラスで塞ぎ、該開口の外側又は内側のいずれか他方を前
記ピンホールを形成した遮光材で塞いだものであっても
よい。According to a first aspect of the present invention, there is provided a semiconductor image pickup apparatus, comprising: A package in which a dark space is formed and the image sensor is provided in the dark space, and a pinhole that captures the light to be imaged in the dark space and forms an image of an imaging target on an imaging surface of the image sensor. It is characterized by having. Further, in the semiconductor imaging device, the imaging element is provided in a package having an opening formed therein, a light shielding material having the pinhole formed thereon is adhered to a package cover glass, and the opening of the package is formed using the package cover glass. It may be characterized by being blocked. Further, the semiconductor imaging device forms the dark space with a cover case and a package, forms an opening in the cover case, closes either the outside or the inside of the opening with a cover glass, and outside or inside the opening. Any one of them may be closed with a light shielding material having the pinhole.

【０００７】このように構成した半導体撮像装置では、
ピンホールから取り込んだ撮像対象からの被撮像光がピ
ンホールによる結像作用によって、撮像素子の撮像面に
結像され、レンズの代わりにピンホールによって被撮像
光の結像が可能となる。また、ピンホールを形成した遮
光材をパッケージカバーガラスに貼着し、このパッケー
ジカバーガラスを用いてパッケージの開口を塞いだ半導
体撮像装置では、撮像素子を保護する部材を用いてピン
ホールの形成が可能となり、装置構成が少ない部品点数
で簡素なものとなる。更に、カバーケース及びパッケー
ジで暗空間を形成し、カバーケースに形成した開口をカ
バーガラスと遮光材で塞いだ半導体撮像装置では、カバ
ーガラスと遮光材とが撮像素子の保護部材とは別部材で
製作可能となり、形状、材質の選択の自由度が高まる。In the semiconductor imaging device configured as described above,
The light to be imaged from the imaging object taken in from the pinhole is imaged on the imaging surface of the image sensor by the imaging action of the pinhole, and the image of the light to be imaged can be formed by the pinhole instead of the lens. Further, in a semiconductor imaging device in which a light shielding material having a pinhole formed thereon is adhered to a package cover glass and the opening of the package is closed using the package cover glass, the pinhole is formed using a member for protecting the imaging element. This makes it possible to simplify the apparatus configuration with a small number of parts. Further, in a semiconductor imaging device in which a dark space is formed by a cover case and a package, and an opening formed in the cover case is closed by a cover glass and a light shielding material, the cover glass and the light shielding material are separate members from the protection member of the imaging element. It can be manufactured, and the degree of freedom in selecting the shape and material is increased.

【０００８】[0008]

【発明の実施の形態】以下、本発明に係る半導体撮像装
置の好適な実施の形態を図面を参照して詳細に説明す
る。図１は本発明に係る半導体撮像装置の第一実施形態
を示す断面図である。パッケージ２１には撮像素子（Ｃ
ＣＤ）２３を内設してあり、パッケージ２１は撮像素子
２３を外部環境から保護している。パッケージ２１には
開口を形成してあり、開口は遮光材２５によって塞いで
ある。遮光材２５にはピンホール２７を穿設してあり、
ピンホール２７は撮像素子２３の撮像面と対向してい
る。遮光材２５の表面にはパッケージカバーガラス２９
を設けてあり、パッケージカバーガラス２９は撮像素子
２３を保護している。また、パッケージ２１には、撮像
素子２３から電気信号を取り出すリード３０を導出して
ある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a semiconductor imaging device according to the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional view showing a first embodiment of a semiconductor imaging device according to the present invention. The package 21 includes an image sensor (C
CD) 23 is internally provided, and the package 21 protects the image sensor 23 from the external environment. An opening is formed in the package 21, and the opening is closed by a light shielding material 25. A pinhole 27 is formed in the light shielding material 25,
The pinhole 27 faces the imaging surface of the imaging device 23. A package cover glass 29 is provided on the surface of the light shielding material 25.
, And the package cover glass 29 protects the image sensor 23. A lead 30 for extracting an electric signal from the image sensor 23 is led out from the package 21.

【０００９】ピンホール２７は、直径が数十ミクロン〜
数百ミクロン程度のもので、光を通す極小さな孔で形成
してある。この遮光材２５及びパッケージカバーガラス
２９は、例えばガラス板に金属蒸着膜を形成し、この金
属蒸着膜にピンホール２７をパターンニングしたもの、
又は印刷膜、プラスチック板などにピンホール２７を形
成し、これをガラス板に接着したものなどで構成するこ
とができる。The diameter of the pinhole 27 is several tens of microns.
It is of the order of a few hundred microns and is formed with very small holes that allow light to pass through. The light-shielding material 25 and the package cover glass 29 are formed, for example, by forming a metal deposition film on a glass plate and patterning the pinhole 27 on the metal deposition film.
Alternatively, the pinhole 27 may be formed in a printing film, a plastic plate, or the like, and the pinhole 27 may be bonded to a glass plate.

【００１０】図２は本発明に係る半導体撮像装置の作用
を説明する断面図である。このように構成した半導体撮
像装置３１は、パッケージ２１の開口を遮光材２５で塞
ぐことで、パッケージ２１の内部が暗空間２１ａとな
る。一方、この暗空間２１ａには、遮光材２５に穿設し
たピンホール２７によって、外部からの光が取り込める
ようになっている。ピンホール２７から取り込んだ撮像
対象Ａからの被撮像光は、ピンホール２７による結像作
用によって、撮像素子２３の撮像面に結像される。即
ち、半導体撮像装置３１は、ピンホールカメラの原理に
よって、レンズの代わりにピンホール２７を用いて被撮
像光の結像を可能としている。FIG. 2 is a sectional view for explaining the operation of the semiconductor imaging device according to the present invention. In the semiconductor imaging device 31 configured as described above, the inside of the package 21 becomes a dark space 21 a by closing the opening of the package 21 with the light shielding material 25. On the other hand, light from the outside can be taken into the dark space 21a by a pinhole 27 formed in the light shielding material 25. The light to be imaged from the imaging target A taken in from the pinhole 27 is imaged on the imaging surface of the image sensor 23 by the imaging effect of the pinhole 27. That is, the semiconductor imaging device 31 uses the pinhole 27 instead of a lens to form an image of light to be captured, based on the principle of a pinhole camera.

【００１１】この半導体撮像装置３１によれば、レンズ
の代わりにピンホール２７を用いて被撮像光の結像を可
能としたので、従来、被撮像光を結像させるために必要
であったレンズ及び絞りを除去することができ、部品点
数を少なくして、装置構造を簡素なものにすることがで
きる。従来装置では、レンズ及び絞りを設けるために、
パッケージ１（図８参照）をケース９内に収容し、この
ケース９にレンズ及び絞りを取り付けていたが、本発明
による半導体撮像装置３１では、レンズ及び絞りが除去
できるため、このケース９も不要とすることができ、大
幅な小型化が達成できる。According to the semiconductor imaging device 31, since the imaging of the light to be imaged can be performed by using the pinhole 27 instead of the lens, a lens conventionally required for imaging the light to be imaged is used. In addition, the diaphragm can be removed, the number of parts can be reduced, and the device structure can be simplified. In the conventional device, in order to provide a lens and an aperture,
Although the package 1 (see FIG. 8) is housed in the case 9 and the lens and the diaphragm are attached to the case 9, the semiconductor imaging device 31 according to the present invention does not require the case 9 because the lens and the diaphragm can be removed. And a significant reduction in size can be achieved.

【００１２】また、ピンホール２７を形成した遮光材２
５をパッケージ２１に固設する簡素な構造で結像が可能
となるため、レンズ１１、絞り１３、撮像素子３を光軸
上で高精度に保持しなければならない従来構造に比べ
て、これらの部品ずれによる影響もなく、取扱いを簡便
なものにすることができる。Further, the light shielding material 2 having the pinhole 27 formed therein
Since the image can be formed by a simple structure in which the lens 5 is fixed to the package 21, the lens 11, the aperture 13, and the imaging device 3 are required to be held with high accuracy on the optical axis, compared with the conventional structure. The handling can be simplified without the influence of the parts displacement.

【００１３】次に、本発明に係る半導体撮像装置の第二
実施形態を図３に基づき説明する。図３は本発明に係る
半導体撮像装置の第二実施形態を示す断面図である。こ
の実施形態による半導体撮像装置４１は、パッケージ２
１の開口にパッケージカバーガラス２９を設けてあり、
このパッケージカバーガラス２９の外面に遮光材２５を
設けてある。また、パッケージカバーガラス２９の端面
には遮光材４３を設けてあり、遮光材４３はパッケージ
カバーガラス２９端面からの入射光を遮断している。他
の構成は第一実施形態による半導体撮像装置３１と同様
である。Next, a second embodiment of the semiconductor imaging device according to the present invention will be described with reference to FIG. FIG. 3 is a sectional view showing a second embodiment of the semiconductor imaging device according to the present invention. The semiconductor imaging device 41 according to this embodiment includes the package 2
A package cover glass 29 is provided in the opening 1
A light shielding material 25 is provided on the outer surface of the package cover glass 29. Further, a light-shielding material 43 is provided on an end face of the package cover glass 29, and the light-shielding material 43 blocks incident light from the end face of the package cover glass 29. Other configurations are the same as those of the semiconductor imaging device 31 according to the first embodiment.

【００１４】この第二実施形態による半導体撮像装置４
１によれば、レンズの代わりにピンホール２７を用い
て、ピンホール２７から取り込んだ被撮像光を撮像素子
２３の撮像面に結像するので、上述の半導体撮像装置３
１と同様に、簡素な構造で、取扱いを簡便にできるのに
加え、パッケージカバーガラス２９の表面を遮光材２５
で覆ったので、ピンホール部分以外（例えばパッケージ
カバーガラス端面）からパッケージカバーガラス２９に
入射する光を遮断することができ、被撮像光の外乱を防
止することができる。The semiconductor imaging device 4 according to the second embodiment
According to No. 1, the imaging light captured from the pinhole 27 is imaged on the imaging surface of the imaging element 23 using the pinhole 27 instead of the lens.
As in the case of the first embodiment, in addition to the simple structure, the handling can be simplified, and the surface of the package cover glass 29 is covered with the light shielding material 25.
Therefore, light incident on the package cover glass 29 from portions other than the pinhole portion (for example, the end surface of the package cover glass) can be blocked, and disturbance of light to be imaged can be prevented.

【００１５】次に、本発明に係る半導体撮像装置の第三
実施形態を図４に基づき説明する。図４は本発明に係る
半導体撮像装置の第三実施形態を示す断面図である。こ
の実施形態による半導体撮像装置５１は、パッケージ２
１の開口内周に段部５３を形成してあり、この段部５３
に端面が嵌合するようにパッケージカバーガラス２９を
固着してある。開口に固着したパッケージカバーガラス
２９の外面には、遮光材２５を設けてある。他の構成は
第二実施形態による半導体撮像装置４１と同様である。Next, a third embodiment of the semiconductor imaging device according to the present invention will be described with reference to FIG. FIG. 4 is a sectional view showing a third embodiment of the semiconductor imaging device according to the present invention. The semiconductor imaging device 51 according to this embodiment includes a package 2
A step portion 53 is formed on the inner periphery of the opening 1 and the step portion 53 is formed.
The package cover glass 29 is fixed so that the end face is fitted to the package cover glass 29. A light shielding material 25 is provided on the outer surface of the package cover glass 29 fixed to the opening. Other configurations are the same as those of the semiconductor imaging device 41 according to the second embodiment.

【００１６】この第三実施形態による半導体撮像装置５
１によれば、レンズの代わりにピンホール２７を用い
て、ピンホール２７から取り込んだ被撮像光を撮像素子
２３の撮像面に結像するので、上述の半導体撮像装置４
１と同様に、簡素な構造で、取扱いを簡便にでき、被撮
像光の外乱を防止することができるのに加え、パッケー
ジカバーガラス２９の端面を段部５３に嵌合させて固着
したので、パッケージカバーガラス端面からの光の遮断
と、パッケージカバーガラス２９の固定とを同時且つ確
実に行うことができる。The semiconductor imaging device 5 according to the third embodiment
According to No. 1, the imaging light captured from the pinhole 27 is imaged on the imaging surface of the imaging element 23 by using the pinhole 27 instead of the lens.
As in the case of 1, in addition to the simple structure, the handling can be simplified, the disturbance of the light to be imaged can be prevented, and the end face of the package cover glass 29 is fitted and fixed to the stepped portion 53. It is possible to simultaneously and reliably block light from the end face of the package cover glass and fix the package cover glass 29.

【００１７】次に、本発明に係る半導体撮像装置の第四
実施形態を図５に基づき説明する。図５は本発明に係る
半導体撮像装置の第四実施形態を示す断面図である。こ
の実施形態による半導体撮像装置７１は、撮像素子２３
を設けたパッケージ２１をカバーケース７３で覆ってい
る。カバーケース７３には、撮像素子２３との対向部分
に開口７５を形成してある。カバーケース外面の開口７
５には小板状のカバーガラス７７を設けてあり、カバー
ガラス７７は開口７５を塞いでいる。また、カバーケー
ス内面の開口７５には、中央にピンホール８１を形成し
た遮光材７９を設けてある。即ち、この半導体撮像装置
７１では、カバーガラス７７と遮光材７９とを別体で構
成してある。Next, a fourth embodiment of the semiconductor imaging device according to the present invention will be described with reference to FIG. FIG. 5 is a sectional view showing a fourth embodiment of the semiconductor imaging device according to the present invention. The semiconductor imaging device 71 according to this embodiment includes the imaging device 23
Is covered with a cover case 73. An opening 75 is formed in the cover case 73 at a portion facing the image sensor 23. Opening 7 on outer surface of cover case
5 is provided with a small plate-shaped cover glass 77, which covers the opening 75. Further, a light-blocking material 79 having a pinhole 81 formed in the center is provided in the opening 75 on the inner surface of the cover case. That is, in the semiconductor imaging device 71, the cover glass 77 and the light shielding material 79 are formed separately.

【００１８】この第四実施形態による半導体撮像装置７
１によれば、上述の半導体撮像装置３１と同様に、簡素
な構造で、取扱いを簡便にできるのに加え、カバーケー
ス７３により撮像素子２３を覆ったので、暗空間の形成
が容易になるとともに、カバーケース７３に形成した開
口７５のみにカバーガラス７７及び遮光材７９を設ける
ので、カバーガラス７７及び遮光材７９を小さなものに
することができ、また、材質選択の自由度を高めること
ができる。The semiconductor imaging device 7 according to the fourth embodiment
According to No. 1, similarly to the above-described semiconductor imaging device 31, the imaging device 23 is covered by the cover case 73 in addition to the simple structure and easy handling, and the formation of the dark space is facilitated. Since the cover glass 77 and the light shielding material 79 are provided only in the opening 75 formed in the cover case 73, the size of the cover glass 77 and the light shielding material 79 can be reduced, and the degree of freedom in material selection can be increased. .

【００１９】次に、本発明に係る半導体撮像装置の第五
実施形態を図６に基づき説明する。図６は本発明に係る
半導体撮像装置の第五実施形態を示す断面図である。こ
の実施形態による半導体撮像装置９１は、上述の第四実
施形態による半導体撮像装置７１と略同様の構成となっ
ており、カバーガラス７７と遮光材７９との取付け位置
が逆となっているところが、半導体撮像装置７１と異な
る。Next, a fifth embodiment of the semiconductor imaging device according to the present invention will be described with reference to FIG. FIG. 6 is a sectional view showing a fifth embodiment of the semiconductor imaging device according to the present invention. The semiconductor imaging device 91 according to this embodiment has substantially the same configuration as the semiconductor imaging device 71 according to the above-described fourth embodiment, and the mounting positions of the cover glass 77 and the light shielding material 79 are reversed. It is different from the semiconductor imaging device 71.

【００２０】この第五実施形態による半導体撮像装置９
１によれば、上述の半導体撮像装置７１と同様の効果に
加え、遮光材７９をカバーケース７３の外面に取り付け
るので、カバーケース取付け後に、遮光材７９を位置決
め固定することができ、装置組立時におけるピンホール
８１の位置調整を容易にすることができる。The semiconductor imaging device 9 according to the fifth embodiment
According to No. 1, in addition to the same effects as the above-described semiconductor imaging device 71, since the light shielding material 79 is attached to the outer surface of the cover case 73, the light shielding material 79 can be positioned and fixed after the cover case is attached. , The position adjustment of the pinhole 81 can be facilitated.

【００２１】図７は遮光材に形成するピンホールの例を
（ａ）〜（ｃ）で示した説明図である。上述の第四、第
五実施形態による半導体撮像装置７１、９１に用いる遮
光材７９は、図７に示すように、ピンホール８１を種々
の形状のものとすることができる。即ち、図７（ａ）に
示したピンホール８１ａは、遮光材７９ａの板厚方向に
同一内径の微小孔を穿設して形成してある。この遮光材
７９ａによれば、ピンホール８１ａの形成が比較的容易
なものとなる。FIGS. 7A to 7C are explanatory views showing examples of pinholes formed in the light shielding material. As shown in FIG. 7, the light shielding material 79 used in the semiconductor imaging devices 71 and 91 according to the above-described fourth and fifth embodiments can have pinholes 81 of various shapes. That is, the pinhole 81a shown in FIG. 7A is formed by piercing a minute hole having the same inner diameter in the thickness direction of the light shielding material 79a. According to the light shielding material 79a, the formation of the pinhole 81a is relatively easy.

【００２２】図７（ｂ）に示したピンホール８１ｂは、
ピンホール８１ｂを中央にして遮光材７９ｂの両面にテ
ーパ面１０３を形成してある。この遮光材７９ｂによれ
ば、ピンホール８１ｂに入射し、ピンホール８１の出口
から撮像素子２３に向かう光が、ピンホール８１の出口
側の孔縁に干渉することがなく、入射光が孔縁によって
遮られる所謂けられを防止することができ、撮像面での
明暗差を軽減することができる。The pinhole 81b shown in FIG.
Tapered surfaces 103 are formed on both surfaces of the light shielding material 79b with the pinhole 81b at the center. According to the light shielding material 79b, the light that enters the pinhole 81b and travels from the exit of the pinhole 81 toward the image sensor 23 does not interfere with the edge of the exit side of the pinhole 81, and the incident light does not It is possible to prevent so-called shading that is interrupted by the image, and it is possible to reduce the difference in brightness on the imaging surface.

【００２３】図７（ｃ）に示したピンホール８１ｃは、
ピンホール８１ｃを中央にして遮光材７９ｃの裏面をテ
ーパ面１０５で形成してある。この遮光材７９ｃによれ
ば、図７（ｂ）に示したピンホール８１ｂと同様の効果
に加え、テーパ面１０５を遮光材７９ｃの裏面のみに形
成することで、遮光材７９ｃの形成を容易なものにする
ことができる。The pinhole 81c shown in FIG.
The back surface of the light shielding material 79c is formed as a tapered surface 105 with the pinhole 81c at the center. According to the light-shielding material 79c, in addition to the same effect as the pinhole 81b shown in FIG. Can be something.

【００２４】[0024]

【発明の効果】以上詳細に説明したように、本発明に係
る半導体撮像装置によれば、レンズの代わりにピンホー
ルを用いて被撮像光の結像を可能としたので、従来、被
撮像光を結像させるために必要であったレンズ及び絞り
を除去することができ、部品点数を少なくして、装置構
造を簡素なものにすることができる。この結果、半導体
撮像装置の小型化、取扱いの簡便化、製造コストの低減
を達成できる。そして、遮光材を貼着したパッケージカ
バーガラスを用いてパッケージの開口を塞いだ半導体撮
像装置によれば、撮像素子を保護する部材を用いてピン
ホールの形成が可能となり、装置をより少ない部品点数
で構成することができる。また、カバーケース及びパッ
ケージで暗空間を形成し、カバーケースに形成した開口
をカバーガラスと遮光材で塞いだ半導体撮像装置によれ
ば、カバーガラスと遮光材とを撮像素子の保護部材と別
部材で製作でき、形状、材質の選択の自由度を高めるこ
とができる。As described in detail above, according to the semiconductor imaging device of the present invention, the imaging light can be imaged by using the pinhole instead of the lens. The lens and the diaphragm, which were necessary for forming an image, can be removed, the number of parts can be reduced, and the device structure can be simplified. As a result, the semiconductor imaging device can be reduced in size, simplified in handling, and reduced in manufacturing cost. According to the semiconductor imaging device in which the opening of the package is closed by using a package cover glass to which a light shielding material is adhered, a pinhole can be formed by using a member that protects the imaging element, and the number of components can be reduced. Can be configured. Further, according to the semiconductor imaging device in which a dark space is formed by the cover case and the package, and the opening formed in the cover case is closed by the cover glass and the light shielding material, the cover glass and the light shielding material are formed separately from the protection member of the imaging element. And the degree of freedom in selecting the shape and material can be increased.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明に係る半導体撮像装置の第一実施形態を
示す断面図である。FIG. 1 is a cross-sectional view showing a first embodiment of a semiconductor imaging device according to the present invention.

【図２】本発明に係る半導体撮像装置の作用を説明する
断面図である。FIG. 2 is a cross-sectional view illustrating the operation of the semiconductor imaging device according to the present invention.

【図３】本発明に係る半導体撮像装置の第二実施形態を
示す断面図である。FIG. 3 is a cross-sectional view showing a second embodiment of the semiconductor imaging device according to the present invention.

【図４】本発明に係る半導体撮像装置の第三実施形態を
示す断面図である。FIG. 4 is a sectional view showing a third embodiment of the semiconductor imaging device according to the present invention.

【図５】本発明に係る半導体撮像装置の第四実施形態を
示す断面図である。FIG. 5 is a sectional view showing a fourth embodiment of the semiconductor imaging device according to the present invention.

【図６】本発明に係る半導体撮像装置の第五実施形態を
示す断面図である。FIG. 6 is a sectional view showing a fifth embodiment of the semiconductor imaging device according to the present invention.

【図７】遮光材に形成するピンホールの例を（ａ）〜
（ｃ）で示した説明図である。FIGS. 7A to 7C show examples of a pinhole formed in a light shielding material.
It is explanatory drawing shown in (c).

【図８】従来の半導体撮像装置を示す断面図である。FIG. 8 is a cross-sectional view showing a conventional semiconductor imaging device.

【符号の説明】[Explanation of symbols]

２１ パッケージ ２１ａ 暗空間 ２３ 撮像素
子 ２５、７９ 遮光材 ２７、８１ ピンホール ２９ パッケージカバーガラス ３１、４１、５１、７１、９１ 半導体撮像装置 ７３ カバーケース ７７ カバーガラスDESCRIPTION OF SYMBOLS 21 Package 21a Dark space 23 Image sensor 25, 79 Light shielding material 27, 81 Pinhole 29 Package cover glass 31, 41, 51, 71, 91 Semiconductor imaging device 73 Cover case 77 Cover glass

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 被撮像光を内部に取り込み結像した像を
撮像素子によって光電変換する半導体撮像装置におい
て、 内部に暗空間を形成し該暗空間に前記撮像素子を内設す
るパッケージと、 前記被撮像光を前記暗空間に取り込み前記撮像素子の撮
像面に撮像対象の像を結像させるピンホールとを具備し
たことを特徴とする半導体撮像装置。1. A semiconductor imaging device for taking in light to be imaged therein and photoelectrically converting an image formed and imaged by an imaging device, wherein a package in which a dark space is formed and the imaging device is internally provided in the dark space; A semiconductor imaging device comprising: a pinhole configured to capture light to be imaged into the dark space and form an image of an imaging target on an imaging surface of the imaging element. 【請求項２】 開口を形成したパッケージに前記撮像素
子を内設し、前記ピンホールを形成した遮光材をパッケ
ージカバーガラスに貼着し、該パッケージカバーガラス
を用いて前記パッケージの開口を塞いだことを特徴とす
る請求項１記載の半導体撮像装置。2. The image pickup device is provided in a package having an opening formed therein, a light shielding material having the pinhole formed thereon is attached to a package cover glass, and the opening of the package is closed using the package cover glass. The semiconductor imaging device according to claim 1, wherein: 【請求項３】 カバーケース及びパッケージで前記暗空
間を形成し、該カバーケースに開口を形成し、該開口の
外側又は内側のいずれか一方をカバーガラスで塞ぎ、該
開口の外側又は内側のいずれか他方を前記ピンホールを
形成した遮光材で塞いだことを特徴とする請求項１記載
の半導体撮像装置。3. The dark space is formed by a cover case and a package, an opening is formed in the cover case, and either the outside or the inside of the opening is closed with a cover glass, and the outside or the inside of the opening is formed. 2. The semiconductor imaging device according to claim 1, wherein the other of the two is covered with a light shielding material having the pinhole.
JP8214438A 1996-05-17 1996-08-14 Semiconductor image pickup device Pending JPH1065132A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP8214438A JPH1065132A (en) 1996-08-14 1996-08-14 Semiconductor image pickup device
US08/855,637 US6795120B2 (en) 1996-05-17 1997-05-13 Solid-state imaging apparatus and camera using the same
EP97107881A EP0807976B1 (en) 1996-05-17 1997-05-14 Solid-state imaging apparatus and camera using the same
EP06014847A EP1715525B1 (en) 1996-05-17 1997-05-14 Solid-state imaging apparatus
EP06014848.3A EP1715526B1 (en) 1996-05-17 1997-05-14 Solid-state imaging apparatus and camera using the same
EP06014846.7A EP1715524B1 (en) 1996-05-17 1997-05-14 Solid-state imaging apparatus
DE69739498T DE69739498D1 (en) 1996-05-17 1997-05-14 Solid state imaging apparatus and use in a camera
DE69739708T DE69739708D1 (en) 1996-05-17 1997-05-14 The solid state imaging device
US10/891,633 US8098309B2 (en) 1996-05-17 2004-07-15 Solid-state imaging apparatus and camera using the same
US13/213,777 US8564702B2 (en) 1996-05-17 2011-08-19 Solid-state imaging apparatus and camera using the same
US14/032,366 US20140042578A1 (en) 1996-05-17 2013-09-20 Solid-state imaging apparatus and camera using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8214438A JPH1065132A (en) 1996-08-14 1996-08-14 Semiconductor image pickup device

Publications (1)

Publication Number Publication Date
JPH1065132A true JPH1065132A (en) 1998-03-06

Family

ID=16655786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8214438A Pending JPH1065132A (en) 1996-05-17 1996-08-14 Semiconductor image pickup device

Country Status (1)

Country Link
JP (1) JPH1065132A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319985A (en) * 2000-02-29 2001-11-16 Agilent Technol Inc Chip-mount sealing structure body
JP2008124538A (en) * 2006-11-08 2008-05-29 Matsushita Electric Works Ltd Pinhole camera
JP2011507284A (en) * 2007-12-19 2011-03-03 ヘプタゴン・オサケ・ユキチュア Wafer stack, integrated optical device and method for making the same
WO2016009972A1 (en) * 2014-07-17 2016-01-21 関根　弘一 Solid state imaging device and manufacturing method therefor
WO2017022450A1 (en) * 2015-07-31 2017-02-09 ソニー株式会社 Pinhole camera, electronic apparatus, and manufacturing method
WO2021241165A1 (en) * 2020-05-27 2021-12-02 ソニーグループ株式会社 Photodetection device
US20230017905A1 (en) * 2021-07-16 2023-01-19 Seiko Epson Corporation Spectroscopic camera

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319985A (en) * 2000-02-29 2001-11-16 Agilent Technol Inc Chip-mount sealing structure body
JP2008124538A (en) * 2006-11-08 2008-05-29 Matsushita Electric Works Ltd Pinhole camera
JP2011507284A (en) * 2007-12-19 2011-03-03 ヘプタゴン・オサケ・ユキチュア Wafer stack, integrated optical device and method for making the same
WO2016009972A1 (en) * 2014-07-17 2016-01-21 関根　弘一 Solid state imaging device and manufacturing method therefor
JP2016025164A (en) * 2014-07-17 2016-02-08 関根　弘一 Solid-state image pickup device and manufacturing method of the same
US10157945B2 (en) 2014-07-17 2018-12-18 Setech Co., Ltd. Solid-state imaging device and method for manufacturing the same
WO2017022450A1 (en) * 2015-07-31 2017-02-09 ソニー株式会社 Pinhole camera, electronic apparatus, and manufacturing method
US10986281B2 (en) 2015-07-31 2021-04-20 Sony Corporation Pinhole camera, electronic apparatus and manufacturing method
US11924557B2 (en) 2015-07-31 2024-03-05 Sony Corporation Pinhole camera, electronic apparatus and manufacturing method
WO2021241165A1 (en) * 2020-05-27 2021-12-02 ソニーグループ株式会社 Photodetection device
US20230017905A1 (en) * 2021-07-16 2023-01-19 Seiko Epson Corporation Spectroscopic camera

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