JPH10339799A - Reflecting mirror and its manufacturing method - Google Patents
Reflecting mirror and its manufacturing methodInfo
- Publication number
- JPH10339799A JPH10339799A JP9149701A JP14970197A JPH10339799A JP H10339799 A JPH10339799 A JP H10339799A JP 9149701 A JP9149701 A JP 9149701A JP 14970197 A JP14970197 A JP 14970197A JP H10339799 A JPH10339799 A JP H10339799A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- ray
- amorphous
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明が属する技術分野】本発明は、Ｘ線縮小投影露光
装置等のＸ線光学系や、Ｘ線光学系以外の光学系に用い
られる反射鏡と、その製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mirror used in an X-ray optical system such as an X-ray reduction projection exposure apparatus or an optical system other than the X-ray optical system, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】近年、半導体集積回路素子の微細化に伴
い、光の回折限界によって制限される光学系の解像力を
向上させるために、従来の紫外線に代えて、これより波
長が短いＸ線を使用した投影リソグラフィー技術が開発
されている。この技術に使用されるＸ線投影露光装置
は、主としてＸ線源、照明光学系、マスク、結像光学
系、ウェファーステージ等により構成される。2. Description of the Related Art In recent years, along with miniaturization of semiconductor integrated circuit elements, in order to improve the resolution of an optical system limited by the diffraction limit of light, X-rays having shorter wavelengths have been used instead of conventional ultraviolet rays. The projection lithography technology used has been developed. An X-ray projection exposure apparatus used in this technique mainly includes an X-ray source, an illumination optical system, a mask, an imaging optical system, a wafer stage, and the like.
【０００３】Ｘ線源には、放射光光源やレーザープラズ
マＸ線源が使用される。照明光学系は、斜入射ミラー、
多層膜ミラー、所定波長のＸ線のみを反射または透過さ
せるフィルター等により構成され、マスク上を所望波長
のＸ線で照明する。マスクには透過型マスクと反射型マ
スクとがある。透過型マスクは、Ｘ線を良く透過する物
質からなる薄いメンブレンの上にＸ線を吸収する物質を
所定形状に設けることによりパターンを形成したもので
ある。As an X-ray source, a radiation light source or a laser plasma X-ray source is used. The illumination optical system is a grazing incidence mirror,
It is composed of a multilayer mirror, a filter that reflects or transmits only X-rays of a predetermined wavelength, and illuminates the mask with X-rays of a desired wavelength. The mask includes a transmission mask and a reflection mask. The transmissive mask is a pattern in which a substance that absorbs X-rays is provided in a predetermined shape on a thin membrane made of a substance that transmits X-rays well, thereby forming a pattern.
【０００４】一方、反射型マスクは、例えばＸ線を反射
する多層膜上に反射率が低い部分を所定形状に設けるこ
とによりパターンを形成したものである。このようなマ
スク上に形成されたパターンは、複数の多層膜ミラーで
構成された投影結像光学系により、フォトレジストが塗
布されたウェファー上に結像されて該レジストに転写さ
れる。[0004] On the other hand, a reflective mask is a pattern in which, for example, a portion having a low reflectance is provided in a predetermined shape on a multilayer film that reflects X-rays. The pattern formed on such a mask is formed on a wafer coated with a photoresist by a projection imaging optical system composed of a plurality of multilayer mirrors, and is transferred to the resist.
【０００５】なお、Ｘ線は大気に吸収されて減衰するた
め、その光路は全て所定真空度に維持されている。Ｘ線
の波長域では、透明な物質は存在せず、また物質表面で
の反射率も非常に低いので、レンズやミラーなどの通常
の光学素子が使用できない。そのため、Ｘ線用の光学系
は、反射面に斜め方向から入射したＸ線を全反射させる
斜入射ミラーや、多層膜の各界面における反射光の位相
を一致させて、干渉効果を利用して高い反射率を得る多
層膜ミラー等により構成されている。[0005] Since the X-rays are absorbed by the atmosphere and attenuated, the optical paths thereof are all maintained at a predetermined degree of vacuum. In the X-ray wavelength range, there is no transparent substance and the reflectance on the substance surface is very low, so that ordinary optical elements such as lenses and mirrors cannot be used. Therefore, the optical system for X-rays uses an oblique incidence mirror that totally reflects the X-rays incident on the reflecting surface from an oblique direction, or matches the phase of the reflected light at each interface of the multilayer film, and utilizes the interference effect. It is composed of a multilayer mirror or the like that obtains a high reflectance.
【０００６】しかし、前記斜入射ミラーを用いた斜入射
光学系は収差が大きいため、回折限界の解像力を得るこ
とはできない。これに対して、前記多層膜ミラーはＸ線
を垂直に反射することが可能であり、回折限界のＸ線光
学系を構成することができる。従って、Ｘ線投影露光装
置の結像光学系は、すべて多層膜ミラーにより構成され
る。However, since the oblique incidence optical system using the oblique incidence mirror has a large aberration, it is impossible to obtain a diffraction-limited resolution. On the other hand, the multilayer mirror can reflect X-rays vertically, and can constitute a diffraction-limited X-ray optical system. Therefore, the image forming optical system of the X-ray projection exposure apparatus is entirely constituted by a multilayer mirror.
【０００７】このようなＸ線反射多層膜ミラーは、シリ
コンのＬ吸収端（12.3nm）の長波長側において、モリブ
デンとシリコンからなる多層膜としたときに最も高い反
射率が得られ、波長13〜15nmでは入射角によらず70% 程
度の反射率を示す。なお、シリコンのＬ吸収端よりも短
波長側において、垂直入射で30% 以上の反射率が得られ
る多層膜は未だ開発されていない。Such an X-ray reflective multilayer mirror has the highest reflectivity on the long wavelength side of the silicon L-absorption edge (12.3 nm) when a multilayer film composed of molybdenum and silicon is used. At ~ 15 nm, the reflectivity is about 70% regardless of the angle of incidence. It should be noted that a multilayer film capable of obtaining a reflectance of 30% or more at normal incidence on the shorter wavelength side than the L absorption edge of silicon has not been developed yet.
【０００８】多層膜ミラーを構成する基板の材料には、
形状精度が高く、しかも表面粗さを小さくする加工が可
能な、石英等のガラス材料が用いられている。[0008] The material of the substrate constituting the multilayer mirror includes:
A glass material such as quartz, which has high shape accuracy and can be processed to reduce the surface roughness, is used.
【０００９】[0009]
【発明が解決しようとする課題】前記Ｘ線投影露光装置
において、実用的なスループット（例えば、８インチ ウェ
ファーで３０枚／１時間、程度）を得るためには、結像
光学系を構成する多層膜ミラーの表面に、ある程度大き
い強度（例えば、１０ｍＷ／ｃｍ2 程度）のＸ線を照射
する必要がある。In the X-ray projection exposure apparatus, in order to obtain a practical throughput (for example, about 30 wafers / hour for an 8-inch wafer), a multi-layered optical system constituting an imaging optical system is required. It is necessary to irradiate the surface of the film mirror with X-rays having a relatively high intensity (for example, about 10 mW / cm 2 ).
【００１０】一方、多層膜ミラーの反射率は高々７０％
程度であり、残りは多層膜で反射されずに吸収、透過、
散乱される。散乱による損失はわずかであり、多層膜を
透過したＸ線は、ミラー基板により完全に吸収される。
即ち、多層膜ミラーで反射されなかったＸ線の大部分
は、多層膜ミラーに吸収されて、そのエネルギーは熱に
変換される。この熱により多層膜ミラーの温度が上昇し
て、多層膜ミラーに熱変形を生じることになる。On the other hand, the reflectivity of the multilayer mirror is at most 70%.
Is the extent, the rest is absorbed, transmitted,
Scattered. The loss due to scattering is slight, and the X-rays transmitted through the multilayer film are completely absorbed by the mirror substrate.
That is, most of the X-rays not reflected by the multilayer mirror are absorbed by the multilayer mirror, and the energy is converted into heat. This heat causes the temperature of the multilayer mirror to rise, resulting in thermal deformation of the multilayer mirror.
【００１１】一般に、光学系で回折限界の解像力を得る
ためには、使用する光の波長と比較して光学系を構成す
るミラーやレンズの形状誤差を充分小さくする必要があ
る。そして、Ｘ線を用いた光学系では、可視光や紫外線
を用いた光学系よりも、波長が短い分だけ形状誤差の許
容範囲は狭くなる。そうしてみると、前述したＸ線照射
による多層膜ミラーの熱変形は、多層膜ミラーの結像特
性に大きな影響を与えることになり、設計通りの解像力
が得られなくなる恐れがある。In general, in order to obtain a diffraction-limited resolution with an optical system, it is necessary to reduce the shape error of mirrors and lenses constituting the optical system as compared with the wavelength of light used. In an optical system using X-rays, the allowable range of the shape error becomes narrower than that in an optical system using visible light or ultraviolet light by the shorter wavelength. In this case, the thermal deformation of the multilayer mirror due to the above-mentioned X-ray irradiation has a great effect on the imaging characteristics of the multilayer mirror, and there is a possibility that the designed resolution may not be obtained.
【００１２】そこで、このような熱変形による結像特性
への影響を防ぐために、基板の裏面からミラーを冷却す
ることが行われているが、充分な効果を得ることはでき
ないという問題点がある。なお、Ｘ線光学系は真空中で
使用されるので、ミラー表面からの放熱はほとんど無
い。In order to prevent the thermal deformation from affecting the imaging characteristics, the mirror is cooled from the back surface of the substrate, but there is a problem that a sufficient effect cannot be obtained. . Since the X-ray optical system is used in a vacuum, there is almost no heat radiation from the mirror surface.
【００１３】従って、熱変形による結像特性への影響を
防ぐためには、ミラーへ入射するＸ線の強度を抑制する
他はなく、そうすると該ミラーを用いたＸ線投影露光装
置のスループットが低下するという問題点があった。即
ち、従来のミラーでは、Ｘ線投影露光装置の高解像力と
高スループットとを両立させることができないという問
題点があった。Therefore, in order to prevent the influence of thermal deformation on the imaging characteristics, there is no other way than to suppress the intensity of the X-rays incident on the mirror, and if so, the throughput of the X-ray projection exposure apparatus using the mirror is reduced. There was a problem. That is, the conventional mirror has a problem that it is impossible to achieve both high resolution and high throughput of the X-ray projection exposure apparatus.
【００１４】以上は、Ｘ線投影露光装置のＸ線光学系に
ついてその問題点を説明したが、反射鏡の熱変形に伴う
問題点は、それ以外のＸ線光学系やＸ線波長域とは異な
る波長域の光線を使用する光学系においても、程度の差
はあれ生じていた。本発明は、かかる問題点に鑑みてな
されたものであり、形状誤差及び表面粗さが小さく、し
かもＸ線などの照射光による熱変形を充分小さく抑える
ことのできる反射鏡とその製造方法を提供することを目
的とする。Although the above has been a description of the problems associated with the X-ray optical system of the X-ray projection exposure apparatus, the problem associated with the thermal deformation of the reflecting mirror is different from other X-ray optical systems and X-ray wavelength ranges. Even in an optical system that uses light beams of different wavelength ranges, some differences have occurred. The present invention has been made in view of the above problems, and provides a reflecting mirror and a method for manufacturing the same, which have a small shape error and a small surface roughness, and can sufficiently suppress thermal deformation due to irradiation light such as X-rays. The purpose is to do.
【００１５】[0015]
【課題を解決するための手段】そのため、本発明は第一
に「少なくとも、低熱膨張性の金属製基板または合金製
基板と、該基板の表面に形成されてなる、表面が光学的
に平滑な非晶質物質の薄膜と、を有する反射鏡におい
て、前記非晶質物質をニッケル合金とするか、あるいは
前記非晶質物質の主成分をニッケル合金としたことを特
徴とする反射鏡（請求項１）」を提供する。また、本発
明は第二に「少なくとも、低熱膨張性の金属製基板また
は合金製基板と、該基板の表面に形成されてなる、表面
が光学的に平滑な非晶質物質の薄膜と、該薄膜の表面に
形成されてなる、所定波長のＸ線を反射する多層膜と、
を有する反射鏡において、前記非晶質物質をニッケル合
金とするか、あるいは前記非晶質物質の主成分をニッケ
ル合金としたことを特徴とする反射鏡（請求項２）」を
提供する。Therefore, the present invention firstly provides "at least a low thermal expansion metal or alloy substrate and an optically smooth surface formed on the surface of the substrate. And a thin film of an amorphous material, wherein the amorphous material is a nickel alloy, or the main component of the amorphous material is a nickel alloy. 1) ”. In addition, the present invention secondly `` at least, a low thermal expansion metal or alloy substrate, formed on the surface of the substrate, a thin film of an optically smooth amorphous material surface, A multilayer film formed on the surface of the thin film and reflecting X-rays of a predetermined wavelength;
Wherein the amorphous substance is made of a nickel alloy or the main component of the amorphous substance is made of a nickel alloy.
【００１６】また、本発明は第三に「前記基板の線膨張
率が１×１０-7／Ｋ以下であることを特徴とする請求項
１または２記載の反射鏡（請求項３）」を提供する。ま
た、本発明は第四に「前記基板の材料をインバー型合金
としたことを特徴とする請求項３記載の反射鏡（請求項
４）」を提供する。Further, the present invention provides, in a third aspect, a "reflecting mirror according to claim 1 or 2 wherein the coefficient of linear expansion of the substrate is 1 × 10 -7 / K or less". provide. The present invention fourthly provides a "reflecting mirror according to claim 3 (claim 4), wherein the material of the substrate is an invar alloy."
【００１７】また、本発明は第五に「少なくとも、低熱
膨張性の金属製基板または合金製基板を用意する工程
と、前記基板上に、ニッケル合金の非晶質薄膜またはニ
ッケル合金を主成分とする非晶質薄膜を形成する工程
と、前記非晶質薄膜の表面を光学的な平滑面に加工する
工程と、を有する反射鏡の製造方法（請求項５）」を提
供する。Further, the present invention is a fifth aspect of the present invention wherein "at least a step of preparing a metal substrate or an alloy substrate having low thermal expansion; and forming an amorphous thin film of a nickel alloy or a nickel alloy as a main component on the substrate. A method of manufacturing a reflecting mirror comprising: a step of forming an amorphous thin film to be formed; and a step of processing the surface of the amorphous thin film into an optically smooth surface.
【００１８】また、本発明は第六に「少なくとも、低熱
膨張性の金属製基板または合金製基板を用意する工程
と、前記基板上に、ニッケル合金の非晶質薄膜またはニ
ッケル合金を主成分とする非晶質薄膜を形成する工程
と、前記非晶質薄膜の表面を光学的に平滑な面に加工す
る工程と、前記平滑な面に加工された非晶質薄膜の表面
に、所定波長のＸ線を反射する多層膜を形成する工程
と、を有する反射鏡の製造方法（請求項６）」を提供す
る。The present invention is also directed to a sixth aspect, "at least a step of preparing a metal substrate or an alloy substrate having a low thermal expansion, and comprising, on the substrate, an amorphous thin film of a nickel alloy or a nickel alloy as a main component. Forming an amorphous thin film to be formed, processing the surface of the amorphous thin film into an optically smooth surface, and applying a predetermined wavelength to the surface of the amorphous thin film processed into the smooth surface. Forming a multilayer film that reflects X-rays.
【００１９】また、本発明は第七に「前記非晶質薄膜を
無電解メッキ法により形成することを特徴とする請求項
５または６記載の製造方法（請求項７）」を提供する。The present invention seventhly provides a "manufacturing method according to claim 5 or 6, wherein the amorphous thin film is formed by an electroless plating method (claim 7)."
【００２０】[0020]
【発明の実施の形態】本発明（請求項１〜４）にかか
る、少なくとも、低熱膨張性の金属製基板または合金製
基板と、該基板の表面に形成されてなる、表面が光学的
に平滑な非晶質物質の薄膜と、を有する反射鏡や、前記
非晶質物質の薄膜上にさらにＸ線反射多層膜を設けた反
射鏡においては、前記非晶質物質をニッケル合金とする
か、あるいは前記非晶質物質の主成分をニッケル合金と
したので、形状誤差及び表面粗さを小さくし、かつＸ線
などの照射光による熱変形を充分小さく抑えることがで
きる。BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention (claims 1 to 4), at least a metal or alloy substrate having low thermal expansion and an optically smooth surface formed on the surface of the substrate. A thin film of an amorphous material, and a reflector having a thin film of the amorphous material further provided with an X-ray reflective multilayer film, wherein the amorphous material is a nickel alloy, Alternatively, since the main component of the amorphous substance is a nickel alloy, shape errors and surface roughness can be reduced, and thermal deformation due to irradiation light such as X-rays can be suppressed sufficiently.
【００２１】そして、本発明（請求項１〜４）にかかる
反射鏡は、これをＸ線光学系に用いたＸ線投影露光装置
の高解像力と高スループットとを両立させることができ
る。本発明にかかる反射鏡は、Ｘ線投影露光装置以外の
Ｘ線光学系や、Ｘ線以外の波長域で使用する高精度の反
射光学系にも適用可能であり、同様の効果が得られる。The reflecting mirror according to the present invention (claims 1 to 4) can achieve both high resolution and high throughput of an X-ray projection exposure apparatus using the reflecting mirror in an X-ray optical system. The reflecting mirror according to the present invention can be applied to an X-ray optical system other than the X-ray projection exposure apparatus and a high-precision reflecting optical system used in a wavelength range other than the X-ray, and the same effects can be obtained.
【００２２】なお、Ｘ線以外の波長域で使用する高精度
の反射光学系に適用する場合には、Ｘ線を反射する多層
膜は不要である。本発明にかかる低熱膨張性の金属製基
板または合金製基板として、線膨張率が１×１０-7／Ｋ
以下のものを使用すると、光照射による基板の熱変形を
大きく抑制することができるので好ましい（請求項
３）。When applied to a high-precision reflecting optical system used in a wavelength range other than X-rays, a multilayer film for reflecting X-rays is not required. The low thermal expansion metal or alloy substrate according to the present invention has a linear expansion coefficient of 1 × 10 −7 / K.
It is preferable to use the following because thermal deformation of the substrate due to light irradiation can be largely suppressed (claim 3).
【００２３】Ｘ線以外の波長域で使用する高精度の反射
光学系に適用する場合には、基板の線膨張率はＸ線光学
系ほど小さい値は要求されず、例えば可視光光学系に適
用するときには、５×１０-6／Ｋ程度の値でよい。線膨
張率が１×１０-7／Ｋ以下の基板材料としては、線膨張
率が非常に小さいインバー型合金が好ましい（請求項
４）。When applied to a high-precision reflective optical system used in a wavelength region other than X-rays, the coefficient of linear expansion of the substrate is not required to be as small as that of an X-ray optical system. In this case, the value may be about 5 × 10 −6 / K. As the substrate material having a coefficient of linear expansion of 1 × 10 −7 / K or less, an invar alloy having a very small coefficient of linear expansion is preferable.
【００２４】ここで、Ｘ線光学系に使用する多層膜ミラ
ーを一例として、多層膜ミラーの表面にＸ線が照射され
たときのミラー表面の変形がどの程度になるかを説明す
る。実際のミラー変形は、ミラーの寸法形状により大き
く異なるので、正確にミラー変形を見積もるためには有
限要素法等による計算が必要であるが、ここでは以下の
ように単純化して、変形の概略値を見積もることとす
る。Here, the degree of deformation of the mirror surface when the surface of the multilayer mirror is irradiated with X-rays will be described by taking a multilayer mirror used in the X-ray optical system as an example. Since the actual mirror deformation varies greatly depending on the size and shape of the mirror, calculation by the finite element method or the like is necessary in order to accurately estimate the mirror deformation. Is estimated.
【００２５】図２（ａ）に示すように、裏面が一定温度
Ｔの熱浴（裏面を冷却して一定温度に保つことに相当す
る）に接した基板（厚さｄ）の表面の一部に定常的な熱
流束Ｑ（照射されたＸ線のうち、反射せずに基板に吸収
されるエネルギー）が投入されたときの、投入部分にお
ける基板面に垂直な方向（ｘ方向）の伸び（または縮
み）Δｘを考える。As shown in FIG. 2A, a part of the surface (thickness d) of the substrate whose back surface is in contact with a heat bath having a constant temperature T (corresponding to cooling the back surface and keeping it at a constant temperature). When a steady heat flux Q (energy absorbed by the substrate without being reflected out of the irradiated X-rays) is injected into the input portion, the elongation in the direction (x direction) perpendicular to the substrate surface at the input portion ( Or shrinkage) Δx is considered.
【００２６】ここでは、横方向の熱伝導は考えず、また
Ｘ線はすべて基板表面で吸収されると単純化する。この
とき基板の内部には、図２（ｂ）に示すように、ｘ方向
に一様な温度勾配が生じるので、位置ｘにおける温度
（熱浴との温度差）Ｔ（ｘ）はHere, the heat conduction in the lateral direction is not considered, and the simplification is made that all the X-rays are absorbed by the substrate surface. At this time, as shown in FIG. 2B, a uniform temperature gradient occurs in the x direction inside the substrate, so that the temperature (temperature difference from the heat bath) T (x) at the position x is
【００２７】[0027]
【数１】 (Equation 1)
【００２８】ただし、ηは熱伝導率により与えられる。
そして、基板内の薄い層（厚さδｘ）の伸びΔ（δｘ）
は、Here, η is given by the thermal conductivity.
And elongation Δ (δx) of a thin layer (thickness δx) in the substrate
Is
【００２９】[0029]
【数２】 (Equation 2)
【００３０】により与えられる。ここで、αは基板材料
の熱膨張係数（線膨張率）である。従って、基板全体の
伸びΔｘは、Is given by Here, α is the thermal expansion coefficient (linear expansion coefficient) of the substrate material. Therefore, the elongation Δx of the entire substrate is
【００３１】[0031]
【数３】 (Equation 3)
【００３２】となる。次に、これらの式を用いて具体的
な値を見積もる。紫外光を用いた投影露光装置の屈折光
学系に広く用いられている溶融石英（ＳｉＯ2 ）の熱伝
導率は1.38 Ｗ／ｍ・Ｋ、熱膨張係数は0.5 ×１０-6で
ある。ここでは、基板へ投入される熱流束Ｑは１０ｍＷ
／ｃｍ2 とする。## EQU1 ## Next, specific values are estimated using these equations. Fused quartz (SiO 2 ), which is widely used for a refractive optical system of a projection exposure apparatus using ultraviolet light, has a thermal conductivity of 1.38 W / m · K and a thermal expansion coefficient of 0.5 × 10 −6 . Here, the heat flux Q input to the substrate is 10 mW
/ Cm 2 .
【００３３】Ｘ線投影露光装置において実用的な露光領
域の寸法を確保するためには、ミラー直径は２００ｍｍ
程度が必要である。そして、ミラー形状を精度良く維持
するためには一般に、厚さは前記直径の1/4 程度が必要
であるで、基板の厚さｄは５０ｍｍとする。これらの数
値を式（３）に代入して溶融石英の熱変形量を計算する
と45.3ｎｍとなる。In order to secure a practical exposure area size in an X-ray projection exposure apparatus, the mirror diameter must be 200 mm.
Need a degree. In order to maintain the mirror shape with high accuracy, the thickness generally needs to be about 1/4 of the diameter, and the thickness d of the substrate is set to 50 mm. When these numerical values are substituted into equation (3) to calculate the amount of thermal deformation of the fused quartz, it is 45.3 nm.
【００３４】光学系の波面収差を波長の1/4 以内とする
レイリーの条件を用いると、光学系を構成するミラー１
枚あたりの形状精度は、Using the Rayleigh condition that the wavefront aberration of the optical system is within 1/4 of the wavelength, the mirror 1 constituting the optical system can be used.
The shape accuracy per sheet is
【００３５】[0035]
【数４】 (Equation 4)
【００３６】以内に抑えなければならない。ここで、ｎ
は光学系を構成するミラーの枚数であり、１／２を掛け
てあるのは反射系であるためである。例えば４枚のミラ
ーにより構成された光学系を波長１３ｎｍで使用する場
合、１枚のミラーに許容される形状誤差（許容形状誤
差）は0.81ｎｍとなる。溶融石英を基板に用いた場合に
は、熱変形量は前記許容形状誤差からかけ離れた大きな
値になるので、溶融石英を基板に用いたミラーにより構
成したＸ線光学系では回折限界の解像力を得ることはで
きない。It must be kept within. Where n
Is the number of mirrors constituting the optical system, and is multiplied by 1/2 because it is a reflection system. For example, when an optical system composed of four mirrors is used at a wavelength of 13 nm, the shape error (allowable shape error) allowed for one mirror is 0.81 nm. When fused quartz is used for the substrate, the amount of thermal deformation is a large value far from the allowable shape error, so that an X-ray optical system including a mirror using fused quartz for the substrate can obtain a diffraction-limited resolution. It is not possible.
【００３７】金属は自由電子による寄与のために熱伝導
率は大きいが、一般に熱膨張係数も大きい。しかし、鉄
とニッケルの合金であるインバー（Invar ）型合金は、
磁歪の影響により、著しく小さな熱膨張係数を示す材料
として知られており、具体的には、Fe-Ni 合金、Fe-Ni-
Co合金、Fe-Co-Cr合金、Fe-Pt 合金、Fe-Pd 合金、Zr-N
b-Fe合金、Cr-Fe-Sn合金、Mn-Ge-Fe合金、Fe-B非晶質合
金およびFe-Ni-Zr非晶質合金等がある。以下では、イン
バー型合金をインバーと称する。Metals have a high thermal conductivity due to the contribution of free electrons, but generally have a high thermal expansion coefficient. However, the Invar type alloy, which is an alloy of iron and nickel,
It is known as a material showing a remarkably small coefficient of thermal expansion due to the influence of magnetostriction. Specifically, it is known that Fe-Ni alloy, Fe-Ni-
Co alloy, Fe-Co-Cr alloy, Fe-Pt alloy, Fe-Pd alloy, Zr-N
There are b-Fe alloy, Cr-Fe-Sn alloy, Mn-Ge-Fe alloy, Fe-B amorphous alloy, Fe-Ni-Zr amorphous alloy and the like. Hereinafter, the Invar alloy is referred to as Invar.
【００３８】典型的なインバーの熱伝導率は12.9Ｗ／ｍ
・Ｋ、熱膨張係数は0.01×10-6である。この数値から式
（３）によりインバーの熱変形量を計算すると0.097 ｎ
ｍとなり、前記許容形状誤差と比べて充分小さく抑える
ことが可能である。しかしながら、一般に金属には微細
な結晶粒界が存在するので、その表面をナノメートルオーダー
の平滑な表面に研磨することは困難である。A typical invar has a thermal conductivity of 12.9 W / m
K, thermal expansion coefficient is 0.01 × 10 -6 When the thermal deformation of Invar is calculated from this numerical value by the equation (3), 0.097 n
m, which can be suppressed sufficiently smaller than the allowable shape error. However, since fine grain boundaries are generally present in metals, it is difficult to polish the surface to a smooth surface on the order of nanometers.
【００３９】Alan G.Michette 著のOptical Systems fo
r X Rays（1986 Plenum Press, NewYork ）の７４頁
に、Ｘ線用ミラー材料の候補となる物質について、研磨
加工により得られる表面粗さが記されている。それによ
ると、各材料で得られた最小表面粗さのｒｍｓ値（二乗
平均値）は、溶融石英とＣＶＤ（Chemical Vapor Depos
ition ）法により作製したＳｉＣで最も小さく0.4 ｎｍ
である。これらの材料は、微細構造を持たない非晶質物
質なので平滑な表面を得ることができる。Optical Systems fo by Alan G. Michette
On page 74 of r X Rays (1986 Plenum Press, New York), the surface roughness of a substance that is a candidate for a mirror material for X-rays obtained by polishing is described. According to this, the rms value (mean-square value) of the minimum surface roughness obtained for each material is different from that of fused quartz and CVD (Chemical Vapor Depos).
0.4 nm, the smallest of SiC produced by the ition method.
It is. Since these materials are amorphous substances having no fine structure, a smooth surface can be obtained.
【００４０】しかし、金属であるインバーでは2.8 ｎｍ
程度の表面粗さまでにしか加工することができない。Ｘ
線用の多層膜ミラーの基板に必要な表面粗さの大きさは
次式により見積もることができる。However, for Invar, which is a metal, 2.8 nm
It can only be processed to a certain degree of surface roughness. X
The magnitude of the surface roughness required for the substrate of the line multilayer mirror can be estimated by the following equation.
【００４１】[0041]
【数５】 (Equation 5)
【００４２】 ただし、Ｒ0 ：表面粗さが無いときの反射率 Ｒ ：表面粗さによる散乱損失があるときの反射率 σ ：表面粗さのRMS 値 λ ：Ｘ線の波長 θ ：斜入射角 ここで、λ＝１３ｎｍ、θ＝９０゜（垂直入射）とした
ときの、表面粗さσに対するＲ／Ｒ0 の値を図３に示
す。R 0 : reflectance when there is no surface roughness R: reflectance when there is scattering loss due to surface roughness σ: RMS value of surface roughness λ: wavelength of X-ray θ: oblique incidence angle Here, FIG. 3 shows the value of R / R 0 with respect to the surface roughness σ when λ = 13 nm and θ = 90 ° (perpendicular incidence).
【００４３】この図より明らかなように、表面粗さ0.4
ｎｍのＳｉＣや溶融石英を多層膜ミラーの基板に使用す
れば、粗さが無い理想的な場合の９割近い反射率が得ら
れるが、表面粗さ2.8 ｎｍのインバーを基板に使用した
場合には、Ｘ線は全く反射しなくなる。そこで本発明者
らは、鋭意検討の結果、低熱膨張性の基板（例えば、イ
ンバー基板）の表面に、表面粗さを小さくする加工が可
能な非晶質物質層を形成すれば、熱変形と表面粗さのい
ずれも充分に小さいミラーを製造できることを見い出し
た。As is apparent from FIG.
If SiC or fused silica with a thickness of 10 nm is used for the substrate of the multilayer mirror, it is possible to obtain a reflectance close to 90% in the ideal case where there is no roughness, but when using Invar with a surface roughness of 2.8 nm for the substrate. Does not reflect X-rays at all. The inventors of the present invention have conducted intensive studies and found that if an amorphous material layer capable of being processed to reduce the surface roughness is formed on the surface of a low thermal expansion substrate (for example, an invar substrate), thermal deformation and It has been found that mirrors with sufficiently low surface roughness can be manufactured.
【００４４】即ち、図１に示すように、インバー等の低
熱膨張性材料の基板上に非晶質物質の薄膜層（ニッケル
合金の非晶質薄膜層またはニッケル合金を主成分とする
非晶質薄膜層）を形成し、この表面に加工（例えば、切
削、研削、研磨）を施してミラーとするか、或いは前記
加工を施した非晶質物質の薄膜層上にさらにＸ線反射多
層膜を形成して多層膜ミラーとすれば、熱変形と表面粗
さのいずれも充分に小さいミラーを製造できることを本
発明者らは見い出した（請求項５、６）。That is, as shown in FIG. 1, a thin film layer of an amorphous substance (a nickel alloy amorphous thin film layer or an amorphous thin film containing a nickel alloy as a main component) is formed on a substrate of a low thermal expansion material such as Invar. A thin film layer) is formed and processed (eg, cut, ground, polished) on the surface to form a mirror, or an X-ray reflective multilayer film is further formed on the thin film layer of the processed amorphous material. The present inventors have found that a mirror having both sufficiently small thermal deformation and low surface roughness can be manufactured by forming a multilayer mirror (claims 5 and 6).
【００４５】前記Michetteの書物には、無電解メッキに
より形成したニッケルの表面粗さは1.1 ｎｍとされてい
るが、最近の加工（例えば、切削、研削、研磨）技術の
進歩によりＳｉＣや溶融石英に匹敵する表面粗さの小さ
い加工が可能になってきた。そこで、本発明では、前記
非晶質物質の薄膜層として、ニッケル合金の非晶質薄膜
層またはニッケル合金を主成分とする非晶質薄膜層を採
用した。In the book of Michette, the surface roughness of nickel formed by electroless plating is 1.1 nm. However, due to recent advances in processing (for example, cutting, grinding and polishing) techniques, SiC and fused quartz have been developed. Processing with a small surface roughness comparable to that of. Therefore, in the present invention, an amorphous thin film layer of a nickel alloy or an amorphous thin film layer containing a nickel alloy as a main component is adopted as the thin film layer of the amorphous substance.
【００４６】式（４）により、インバーの表面にニッケ
ル薄膜を形成した基板の熱変形Δｘを調べた。ここで、
基板に投入される熱流束Ｑは１０ｍＷ／ｃｍ2 、基板全
体の厚さは５０ｍｍとした。インバーだけの場合には、
変形量は0.097 ｎｍである。この表面に１ｍｍの厚さの
ニッケル薄膜層を形成しても、ニッケル薄膜層の熱変形
は0.007 ｎｍであり、熱変形Δｘはインバーだけの場合
と殆ど変わらないので、許容される形状誤差よりも充分
小さく熱変形を抑えることができる。The thermal deformation Δx of the substrate on which the nickel thin film was formed on the surface of Invar was examined by the equation (4). here,
The heat flux Q applied to the substrate was 10 mW / cm 2 , and the thickness of the entire substrate was 50 mm. In the case of invar only,
The amount of deformation is 0.097 nm. Even if a nickel thin film layer having a thickness of 1 mm is formed on this surface, the thermal deformation of the nickel thin film layer is 0.007 nm, and the thermal deformation Δx is almost the same as the case of using only Invar. Thermal deformation can be suppressed sufficiently small.
【００４７】基板上に形成した非晶質薄膜の表面を加工
（例えば、切削、研削、研磨）技術により必要な表面粗
さに研磨するとミラーが完成する。なお、Ｘ線用のミラ
ーとして使用するときには、加工した非晶質薄膜の表面
にさらにＸ線反射多層膜を形成すればよい。なお、この
多層膜の厚さは数／１０μｍ以下しかないので、その熱
変形は無視することができる。When the surface of the amorphous thin film formed on the substrate is polished to a required surface roughness by a processing (for example, cutting, grinding, polishing) technique, a mirror is completed. When used as an X-ray mirror, an X-ray reflection multilayer film may be further formed on the surface of the processed amorphous thin film. Since the thickness of this multilayer film is only several ten μm or less, its thermal deformation can be ignored.
【００４８】ニッケル合金等からなる非晶質薄膜層は、
無電解メッキ法により形成することができる（請求項
７）。以下、本発明を実施例により更に詳細に説明する
が、本発明はこの例に限定されるものではない。The amorphous thin film layer made of a nickel alloy or the like
It can be formed by an electroless plating method (claim 7). Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
【００４９】[0049]
【実施例】本実施例では、インバー基板の表面に無電解
メッキによるニッケルの非晶質薄膜を形成し、その表面
を加工（切削、研削、研磨）して必要な表面粗さとし、
さらに加工した非晶質薄膜の表面にＸ線反射多層膜を形
成して、直径２００ｍｍ、曲率半径５００ｍｍ、中心厚
さ５０ｍｍのＸ線多層膜反射ミラーを製造した。図１を
引用して、その製造工程を順に説明する。EXAMPLE In this example, an amorphous thin film of nickel was formed by electroless plating on the surface of an Invar substrate, and the surface was processed (cut, ground, and polished) to a required surface roughness.
Further, an X-ray reflection multilayer film was formed on the surface of the processed amorphous thin film, and an X-ray reflection mirror having a diameter of 200 mm, a curvature radius of 500 mm, and a center thickness of 50 mm was manufactured. The manufacturing steps will be described in order with reference to FIG.
【００５０】まず、インバー素材を研削加工して直径２
００ｍｍ、中心厚さ３０ｍｍ、表面が曲率半径５００ｍ
ｍの凹面で裏面が平面のインバー製基板１を作製した。
そして、基板表面（薄膜を形成する面）を電解研磨加工
により表面粗さ１０ｎｍ（ｒｍｓ）以下の鏡面に仕上げ
てから、この表面に無電解メッキ法によりニッケル合金
からなる非晶質薄膜２を厚さが５００μｍとなるように
形成した。First, the invar material was ground to a diameter 2
00mm, center thickness 30mm, surface radius of curvature 500m
A substrate 1 made of Invar having a concave surface of m and a flat back surface was manufactured.
Then, the surface of the substrate (the surface on which the thin film is formed) is finished to a mirror surface having a surface roughness of 10 nm (rms) or less by electrolytic polishing, and then an amorphous thin film 2 made of a nickel alloy is formed on the surface by electroless plating. Was formed to be 500 μm.
【００５１】次に、非晶質薄膜２の表面を研削および研
磨して、表面粗さが0.4 ｎｍ（ｒｍｓ）となるまで平滑
にした。このようにして、インバー製基板１上にニッケ
ル合金からなる非晶質薄膜２を形成したＸ線ミラー用の
基板３を作製した。最後に、イオンビームスパッタリン
グにより、モリブデン（Ｍｏ）とシリコン（Ｓｉ）から
なる周期長6.7 ｎｍ、積層数５０層のＸ線反射多層膜４
を基板３の表面に形成してＸ線反射ミラーを完成した。Next, the surface of the amorphous thin film 2 was ground and polished to smooth the surface until the surface roughness became 0.4 nm (rms). In this way, a substrate 3 for an X-ray mirror having the amorphous thin film 2 made of a nickel alloy formed on the Invar substrate 1 was produced. Finally, an X-ray reflection multilayer film 4 composed of molybdenum (Mo) and silicon (Si) and having a period length of 6.7 nm and a number of laminations of 50 is formed by ion beam sputtering.
Was formed on the surface of the substrate 3 to complete the X-ray reflection mirror.
【００５２】このＸ線反射ミラーは、裏面を冷却して一
定温度に保っておけば、１０ｍＷ／ｃｍ2 の熱流束がそ
の全面または一部に入射しても、熱変形は0.1 ｎｍ以下
となり、波長１３ｎｍのＸ線を用いた回折限界の光学系
を構成することができた。なお、本実施例では低熱膨張
性の金属製基板１の材料としてインバーを用いたが、そ
の材料はインバーに限定されない。但し、その熱膨張係
数は１×１０-7／Ｋ以下であることが好ましい。If the rear surface of the X-ray reflecting mirror is cooled and kept at a constant temperature, even if a heat flux of 10 mW / cm 2 is incident on the entire surface or a part thereof, the thermal deformation is 0.1 nm or less. A diffraction-limited optical system using X-rays having a wavelength of 13 nm could be constructed. In this embodiment, invar is used as the material of the metal substrate 1 having low thermal expansion, but the material is not limited to invar. However, the coefficient of thermal expansion is preferably 1 × 10 −7 / K or less.
【００５３】本実施例にかかる反射鏡によれば、形状誤
差及び表面粗さを小さくし、かつＸ線などの照射光によ
る熱変形を充分小さく抑えることができる。そして、本
実施例にかかる反射鏡は、これをＸ線光学系に用いたＸ
線投影露光装置の高解像力と高スループットとを両立さ
せることができる。本実施例にかかる反射鏡は、Ｘ線投
影露光装置以外のＸ線光学系や、Ｘ線以外の波長域で使
用する高精度の反射光学系にも適用可能であり、同様の
効果が得られる。According to the reflecting mirror of this embodiment, the shape error and the surface roughness can be reduced, and the thermal deformation due to irradiation light such as X-rays can be suppressed sufficiently. Then, the reflecting mirror according to the present embodiment uses an X-ray
It is possible to achieve both high resolution and high throughput of the line projection exposure apparatus. The reflecting mirror according to the present embodiment can be applied to an X-ray optical system other than the X-ray projection exposure apparatus, or a high-precision reflecting optical system used in a wavelength range other than the X-ray, and the same effects can be obtained. .
【００５４】なお、Ｘ線以外の波長域で使用する高精度
の反射光学系に適用する場合には、Ｘ線を反射する多層
膜は不要である。When applied to a high-precision reflecting optical system used in a wavelength range other than X-rays, a multilayer film for reflecting X-rays is not required.
【００５５】[0055]
【発明の効果】以上説明したように、本発明にかかる反
射鏡によれば、形状誤差及び表面粗さを小さくし、かつ
Ｘ線などの照射光による熱変形を充分小さく抑えること
ができるので、高精度の光学系を提供できる。そのた
め、本発明にかかる反射鏡は、これをＸ線光学系に用い
たＸ線投影露光装置の高解像力と高スループットとを両
立させることができる。As described above, according to the reflecting mirror of the present invention, the shape error and the surface roughness can be reduced, and the thermal deformation due to the irradiation light such as X-rays can be suppressed sufficiently. A highly accurate optical system can be provided. Therefore, the reflecting mirror according to the present invention can achieve both high resolution and high throughput of the X-ray projection exposure apparatus using the reflecting mirror in the X-ray optical system.
【００５６】また、本発明にかかる反射鏡は、Ｘ線投影
露光装置以外のＸ線光学系や、Ｘ線以外の波長域で使用
する高精度の反射光学系にも適用可能であり、同様の効
果が得られる。The reflecting mirror according to the present invention can be applied to an X-ray optical system other than the X-ray projection exposure apparatus and a high-precision reflecting optical system used in a wavelength range other than the X-ray. The effect is obtained.
【図１】実施例の反射鏡を示す概略断面図である。FIG. 1 is a schematic sectional view showing a reflecting mirror of an embodiment.
【図２】反射鏡を構成する基板の熱変形を説明する図で
ある。FIG. 2 is a diagram illustrating thermal deformation of a substrate constituting a reflecting mirror.
【図３】反射鏡を構成する基板の表面粗さによる多層膜
ミラーの反射率の差異を示す図である。FIG. 3 is a diagram showing a difference in reflectance of a multilayer mirror due to a surface roughness of a substrate constituting a reflecting mirror.
１ 低熱膨張性の金属製基板または合金製基板 ２ 非晶質薄膜（ニッケル合金の非晶質薄膜層またはニ
ッケル合金を主成分とする非晶質薄膜層） ３ Ｘ線ミラー用基板 ４ Ｘ線反射多層膜 以上DESCRIPTION OF SYMBOLS 1 Low thermal expansion metal substrate or alloy substrate 2 Amorphous thin film (amorphous thin film layer of nickel alloy or amorphous thin film layer mainly composed of nickel alloy) 3 X-ray mirror substrate 4 X-ray reflection Multilayer film
Claims (7)
たは合金製基板と、該基板の表面に形成されてなる、表
面が光学的に平滑な非晶質物質の薄膜と、を有する反射
鏡において、 前記非晶質物質をニッケル合金とするか、あるいは前記
非晶質物質の主成分をニッケル合金としたことを特徴と
する反射鏡。1. A reflecting mirror having at least a metal or alloy substrate having low thermal expansion and a thin film of an amorphous material having an optically smooth surface formed on the surface of the substrate. A reflector, wherein the amorphous substance is a nickel alloy, or a main component of the amorphous substance is a nickel alloy.
たは合金製基板と、該基板の表面に形成されてなる、表
面が光学的に平滑な非晶質物質の薄膜と、該薄膜の表面
に形成されてなる、所定波長のＸ線を反射する多層膜
と、を有する反射鏡において、 前記非晶質物質をニッケル合金とするか、あるいは前記
非晶質物質の主成分をニッケル合金としたことを特徴と
する反射鏡。2. A metal or alloy substrate having low thermal expansion, at least a thin film of an amorphous substance having an optically smooth surface formed on the surface of the substrate, and a thin film of an amorphous substance formed on the surface of the substrate. And a multilayer film formed to reflect X-rays of a predetermined wavelength, wherein the amorphous substance is a nickel alloy, or a main component of the amorphous substance is a nickel alloy. A reflector.
下であることを特徴とする請求項１または２記載の反射
鏡。3. The reflector according to claim 1, wherein the coefficient of linear expansion of the substrate is 1 × 10 −7 / K or less.
ことを特徴とする請求項３記載の反射鏡。4. The reflector according to claim 3, wherein a material of said substrate is an Invar alloy.
程と、 前記基板上に、ニッケル合金の非晶質薄膜またはニッケ
ル合金を主成分とする非晶質薄膜を形成する工程と、 前記非晶質薄膜の表面を光学的な平滑面に加工する工程
と、を有する反射鏡の製造方法。5. A step of preparing at least a metal or alloy substrate having low thermal expansion, and forming a nickel alloy amorphous thin film or an amorphous thin film containing nickel alloy as a main component on the substrate. And a step of processing the surface of the amorphous thin film into an optically smooth surface.
程と、 前記基板上に、ニッケル合金の非晶質薄膜またはニッケ
ル合金を主成分とする非晶質薄膜を形成する工程と、 前記非晶質薄膜の表面を光学的に平滑な面に加工する工
程と、 前記平滑な面に加工された非晶質薄膜の表面に、所定波
長のＸ線を反射する多層膜を形成する工程と、を有する
反射鏡の製造方法。6. A step of preparing at least a metal or alloy substrate having low thermal expansion, and forming a nickel alloy amorphous thin film or an amorphous thin film containing nickel alloy as a main component on the substrate. And a step of processing the surface of the amorphous thin film into an optically smooth surface; and a multilayer film reflecting X-rays of a predetermined wavelength on the surface of the amorphous thin film processed into the smooth surface. Forming a reflecting mirror.
形成することを特徴とする請求項５または６記載の製造
方法。7. The method according to claim 5, wherein the amorphous thin film is formed by an electroless plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9149701A JPH10339799A (en) | 1997-06-06 | 1997-06-06 | Reflecting mirror and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9149701A JPH10339799A (en) | 1997-06-06 | 1997-06-06 | Reflecting mirror and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10339799A true JPH10339799A (en) | 1998-12-22 |
Family
ID=15480937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9149701A Pending JPH10339799A (en) | 1997-06-06 | 1997-06-06 | Reflecting mirror and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10339799A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0955565A3 (en) * | 1998-05-08 | 2001-05-30 | Nikon Corporation | Mirror for soft x-ray exposure apparatus |
| KR20050009848A (en) * | 2003-07-18 | 2005-01-26 | 한국전광(주) | Wolter mirror separately composed of two nonspherical surface and method for manufacturing the same |
| US6992306B2 (en) | 2003-04-15 | 2006-01-31 | Canon Kabushiki Kaisha | Temperature adjustment apparatus, exposure apparatus having the same, and device fabricating method |
| JP2006154440A (en) * | 2004-11-30 | 2006-06-15 | Canon Inc | Optical element and processing method for the same |
| JP2006518883A (en) * | 2003-02-24 | 2006-08-17 | レイセオン・カンパニー | High precision mirror and manufacturing method thereof |
| CN101898324A (en) * | 2010-07-28 | 2010-12-01 | 中国人民解放军国防科学技术大学 | Method for polishing ion beam with high-gradient mirror surface |
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| JP2016021057A (en) * | 2014-06-19 | 2016-02-04 | キヤノン株式会社 | Optical element having multiple optical functional surfaces, spectral device, and manufacturing method of the same |
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-
1997
- 1997-06-06 JP JP9149701A patent/JPH10339799A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0955565A3 (en) * | 1998-05-08 | 2001-05-30 | Nikon Corporation | Mirror for soft x-ray exposure apparatus |
| JP4664277B2 (en) * | 2003-02-24 | 2011-04-06 | レイセオン カンパニー | High precision mirror and manufacturing method thereof |
| JP2006518883A (en) * | 2003-02-24 | 2006-08-17 | レイセオン・カンパニー | High precision mirror and manufacturing method thereof |
| US6992306B2 (en) | 2003-04-15 | 2006-01-31 | Canon Kabushiki Kaisha | Temperature adjustment apparatus, exposure apparatus having the same, and device fabricating method |
| US7250616B2 (en) | 2003-04-15 | 2007-07-31 | Canon Kabushiki Kaisha | Temperature adjustment apparatus, exposure apparatus having the same, and device fabricating method |
| KR20050009848A (en) * | 2003-07-18 | 2005-01-26 | 한국전광(주) | Wolter mirror separately composed of two nonspherical surface and method for manufacturing the same |
| JP2006154440A (en) * | 2004-11-30 | 2006-06-15 | Canon Inc | Optical element and processing method for the same |
| JP4667021B2 (en) * | 2004-11-30 | 2011-04-06 | キヤノン株式会社 | Optical element molding method |
| CN101898324A (en) * | 2010-07-28 | 2010-12-01 | 中国人民解放军国防科学技术大学 | Method for polishing ion beam with high-gradient mirror surface |
| CN102642156A (en) * | 2012-05-04 | 2012-08-22 | 中国人民解放军国防科学技术大学 | Optical mirror ion beam nano-precision machining method based on combination of material addition and removal |
| JP2016021057A (en) * | 2014-06-19 | 2016-02-04 | キヤノン株式会社 | Optical element having multiple optical functional surfaces, spectral device, and manufacturing method of the same |
| JP2017207775A (en) * | 2014-06-19 | 2017-11-24 | キヤノン株式会社 | Optical element with a plurality of optical functional surfaces, spectroscopic instrument, and method for manufacturing the same |
| US11385383B2 (en) | 2018-11-13 | 2022-07-12 | Raytheon Company | Coating stress mitigation through front surface coating manipulation on ultra-high reflectors or other optical devices |
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