JPH10313123A - Transducer using thin film and manufacture thereof - Google Patents
Transducer using thin film and manufacture thereofInfo
- Publication number
- JPH10313123A JPH10313123A JP12198997A JP12198997A JPH10313123A JP H10313123 A JPH10313123 A JP H10313123A JP 12198997 A JP12198997 A JP 12198997A JP 12198997 A JP12198997 A JP 12198997A JP H10313123 A JPH10313123 A JP H10313123A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- electrode
- conversion element
- comb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板に対して浮動
支持された薄膜と電極を備える、微細形状の機械変位／
電気信号変換器あるいは電気信号／機械変位変換器に関
し、例えば、流速センサ，加速度センサ，角速度センサ
もしくはマイクロアクチュエ−タに用いられる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a micro-shaped mechanical displacement / electrode having a thin film and an electrode floating supported on a substrate.
The present invention relates to an electric signal converter or an electric signal / mechanical displacement converter, and is used for, for example, a flow velocity sensor, an acceleration sensor, an angular velocity sensor, or a microactuator.
【０００２】[0002]
【従来の技術】この種の変換器の代表的なものは、基板
上にアンカ−を介して例えばｘ，ｚ方向に振動可に浮動
支持した半導体薄膜（浮動体）に、例えばｙ方向に分布
しそれぞれがｘ方向に延びる櫛歯電極（浮動櫛歯電極）
を備え、基板上に固定支持した半導体薄膜に、該浮動櫛
歯電極に対して非接触で噛み合いかつ平行な櫛歯電極
（固定櫛歯電極）を備える。浮動体に接する流体がｘ方
向に流れると浮動体が同方向に引かれて変位して、固定
櫛歯電極に対して浮動櫛歯電極がｘ方向に変位すること
により、両電極間の静電容量が変化する。この静電容量
を測定することにより、流速を求めることができる（例
えば、TRANSDUCERS '95, EUROSENSORS IX The 8th Inte
rnational Conference on Solid-State Sensors and Ac
tuators, andEurosensors IX. Stockholm, Sweden, Jun
e 25-29, 1995 pp 443-446)。また、ｘ方向に加速度が
加わったときにも同様な原理により、加速度を測定する
ことができる。2. Description of the Related Art A typical example of a converter of this type is a semiconductor thin film (floating body) which is supported on a substrate via an anchor so as to vibrate in the x and z directions, for example, in a y-direction. Comb electrodes each extending in the x direction (floating comb electrodes)
And a comb-tooth electrode (fixed comb-tooth electrode) meshed with and in parallel with the floating comb-tooth electrode in non-contact with the semiconductor thin film fixedly supported on the substrate. When the fluid in contact with the floating body flows in the x direction, the floating body is pulled in the same direction and displaced, and the floating comb tooth electrode is displaced in the x direction with respect to the fixed comb tooth electrode. The capacity changes. By measuring this capacitance, the flow velocity can be determined (for example, TRANSDUCERS '95, EUROSENSORS IX The 8th Inte
rnational Conference on Solid-State Sensors and Ac
tuators, andEurosensors IX. Stockholm, Sweden, Jun
e 25-29, 1995 pp 443-446). Also, when acceleration is applied in the x direction, the acceleration can be measured according to the same principle.
【０００３】浮動体の左辺部に１組かつ右辺部に１組の
浮動櫛歯電極（左側浮動櫛歯電極と右側浮動櫛歯電極）
を備え、固定櫛歯電極も２組（各組の浮動櫛歯電極に非
接触で噛み合いかつ平行な左側固定櫛歯電極および右側
固定櫛歯電極）として、左側浮動櫛歯電極／左側固定櫛
歯電極間と右側浮動櫛歯電極／右側固定櫛歯電極間に交
互に電圧を印加することにより、浮動体がｘ方向に振動
する。浮動体に、ｙ軸を中心とする回転の角速度が加わ
ると、浮動体にコリオリ力が加わって、浮動体の振動
は、ｚ方向にも振動する楕円振動となる。浮動体を導体
としもしくはｘｙ平面を有する電極が接合したものと
し、浮動体のｘｙ平面に平行な検出電極を基板上に備え
ておくと、この検出電極と浮動体との間の静電容量が、
楕円振動のｚ成分（角速度成分）に対応して振動する。
この静電容量の変化（振幅）を測定することにより、角
速度を求めることが出来る（例えば特開平７−４３１６
６号公報，特願平８−２４９８２２号）。One set of floating comb electrodes on the left side and one set of floating comb electrodes on the right side of the floating body (left floating comb electrode and right floating comb electrode)
And the fixed comb-teeth electrodes are also provided as two sets (a left fixed comb electrode and a right fixed comb electrode which mesh with and are parallel to each set of floating comb electrodes in a non-contact manner), and the left floating comb electrode / left fixed comb tooth By alternately applying a voltage between the electrodes and between the right floating comb electrode and the right fixed comb electrode, the floating body vibrates in the x direction. When the angular velocity of rotation about the y-axis is applied to the floating body, Coriolis force is applied to the floating body, and the vibration of the floating body becomes an elliptical vibration that also oscillates in the z direction. If the floating body is a conductor or an electrode having an xy plane is bonded, and a detection electrode parallel to the xy plane of the floating body is provided on the substrate, the capacitance between the detection electrode and the floating body is reduced. ,
Vibrates according to the z component (angular velocity component) of the elliptical vibration.
By measuring the change (amplitude) of the capacitance, the angular velocity can be obtained (for example, Japanese Patent Laid-Open No. 7-4316).
6, Japanese Patent Application No. 8-249822).
【０００４】左側浮動櫛歯電極／左側固定櫛歯電極間と
右側浮動櫛歯電極／右側固定櫛歯電極間に選択的に電圧
を印加することにより、浮動体が左移動又は右移動する
ので、浮動体をマイクロアクチュエ−タのｘ駆動作動子
として用いることができる。また、浮動体と検出電極と
の間に加える電圧および極性により浮動体がｚ方向に移
動するので、浮動体をｚ駆動作動子としても用いること
ができる。By selectively applying a voltage between the left floating comb electrode / left fixed comb electrode and between the right floating comb electrode / right fixed comb electrode, the floating body moves left or right. The floating body can be used as an x-drive actuator of a microactuator. Further, since the floating body moves in the z direction depending on the voltage and polarity applied between the floating body and the detection electrode, the floating body can be used as a z-drive actuator.
【０００５】従来、半導体薄膜を浮動体として用いたこ
の種の変換素子において、基板に対して平行なｘ方向の
静電駆動による浮動体の駆動または静電容量による変位
検出には、交互にかみ合う櫛歯状の電極や平行平板電極
を用いており、それらの電極は、半導体薄膜をエッチン
グした面（ｘｚ面，ｙｚ面）を用いてきた。Conventionally, in a conversion element of this type using a semiconductor thin film as a floating body, the floating element is driven alternately by electrostatic drive in the x direction parallel to the substrate or displacement is detected by capacitance. A comb-shaped electrode or a parallel plate electrode has been used, and these electrodes have been used for etching a semiconductor thin film (xz plane, yz plane).
【０００６】櫛歯電極を用いた従来の変換素子製造方法
の一例の概要を、図２を参照して説明する。Ｓi基板を
基板１として用い〔図２の（ａ）〕、ＬＰ−ＣＶＤ法に
より絶縁層２としてＳi3Ｎ4膜を１００ｎｍ形成し〔図
２の（ｂ）〕、さらにＬＰ−ＣＶＤ法によりエッチング
層３としてＰＳＧ膜を２μｍ形成する。An outline of an example of a conventional conversion element manufacturing method using a comb electrode will be described with reference to FIG. Using a Si substrate as a substrate 1 (FIG. 2A), a 100 nm thick Si 3 N 4 film is formed as an insulating layer 2 by an LP-CVD method (FIG. 2B), and further etching by an LP-CVD method. As the layer 3, a 2 μm PSG film is formed.
【０００７】次にフォトリソエッチング工程により、後
に形成するＰドープ多結晶Ｓiからなる浮動体５を基板
１上に保持するための支持部４ａ〜４ｄ、固定櫛歯電極
６，７を固定するための支持部４ｅ，４ｆ、配線及びパ
ッド部４ｇ〜４ｉのＰＳＧ膜３をエッチングし〔図２の
（ｃ）〕、Ｓｉ3Ｎ4膜２を露出させる。Next, in a photolithographic etching step, support portions 4a to 4d for holding floating body 5 made of P-doped polycrystalline Si to be formed later on substrate 1 and fixed comb-tooth electrodes 6, 7 for fixing. support portion 4e, 4f, by etching the PSG film 3 of the wiring and the pad part 4g~4i [shown in FIG. 2 (c)], to expose the the Si 3 N 4 film 2.
【０００８】次にＬＰ−ＣＶＤ法によりＰドープ多結晶
Ｓiの層５〜７（基板１の全面）を２μｍ形成し、内部
応力緩和と不純物の活性化を目的としてＮ2雰囲気中で
１０５０°Ｃの熱処理を行う。上記多結晶Ｓｉの層５〜
７（基板１の表面全体に及ぶ）を、フォトリソエッチン
グ工程により、所望とする浮動体，梁，固定電極，櫛歯
電極，配線，電極パッド等の形状にエッチングする〔図
２の（ｄ）〕。[0008] Then the P-doped polycrystalline layer of Si 5 to 7 (the entire surface of the substrate 1) is 2μm formed by the LP-CVD method, in N 2 atmosphere for the purpose of activation of the internal stress relaxation and impurities 1050 ° C Is performed. Layer 5 of the above polycrystalline Si
7 (covering the entire surface of the substrate 1) is etched into a desired shape of a floating body, a beam, a fixed electrode, a comb electrode, a wiring, an electrode pad, etc. by a photolithographic etching process (FIG. 2 (d)). .
【０００９】次にリフトオフ法により、電極パッド５
ｇ，６ｃ，７ｃ〔図２の（ｄ）〕上に接続電極用のメタ
ル８ａ〜８ｃを形成する〔図２の（ｅ）〕。そして、エ
ッチング層３を除去する。これにより浮動体５と、基板
１上の絶縁層２との間に空隙が出来る〔図２の
（ｆ）〕。Next, the electrode pad 5 is formed by a lift-off method.
Metals 8a to 8c for connection electrodes are formed on g, 6c, and 7c (FIG. 2D) [FIG. 2E]. Then, the etching layer 3 is removed. Thereby, a gap is formed between the floating body 5 and the insulating layer 2 on the substrate 1 (FIG. 2 (f)).
【００１０】これにより、浮動体５の梁（４本）の端部
が支持部４ａ〜４ｄでｚ方向に下って絶縁層２に接合
し、梁（４本）と連続の平板状の、浮動体基幹５ｈが基
板１上の絶縁層２よりｚ方向に離れて、梁（４本）のた
わみにより、基幹５ｈがｘ方向およびｚ方向に変位可で
ある。基幹５ｈから櫛歯電極５ｅ，５ｆが分岐してｘ方
向に突出し、櫛歯電極５ｅ，５ｆの櫛歯ギャップに固定
電極６，７の櫛歯電極６ｂ，７ｂが入り込んだ形となっ
ている。Thus, the ends of the beams (four) of the floating body 5 are joined to the insulating layer 2 by the support portions 4a to 4d in the z-direction, and the flat (four) beams continuous with the beams (four) are formed. The body trunk 5h is separated from the insulating layer 2 on the substrate 1 in the z direction, and the beams (four) can be displaced in the x direction and the z direction by bending of the beams (four). The comb electrodes 5e and 5f are branched from the main trunk 5h and protrude in the x direction, and the comb electrodes 6b and 7b of the fixed electrodes 6 and 7 are inserted into the comb gap of the comb electrodes 5e and 5f.
【００１１】[0011]
【発明が解決しようとする課題】以上のように形成され
る浮動側の櫛歯電極５ｅ，５ｆと固定側の櫛歯電極６
ｂ，７ｂとの電極間距離（ｙ方向およびｘ方向）は、フ
ォトリソエッチング工程により決まり、浮動体５の基幹
５のｘ方向変位に対する、浮動側の櫛歯電極５ｅ，５ｆ
／固定側の櫛歯電極６ｂ，７ｂ間の静電容量の変化は小
さい。The floating-side comb-teeth electrodes 5e and 5f and the fixed-side comb-teeth electrode 6 formed as described above.
The distance between the electrodes b and 7b (the y direction and the x direction) is determined by a photolithographic etching process, and the floating comb-shaped electrodes 5e and 5f with respect to the displacement of the main body 5 of the floating body 5 in the x direction.
The change in the capacitance between the fixed-side comb-teeth electrodes 6b and 7b is small.
【００１２】上記櫛歯電極による駆動力および検出感度
は、変位に対する容量変化に比例し、駆動力および検出
感度は浮動体５の膜厚に比例し、電極間距離に反比例す
る。しかし、半導体薄膜（５〜７）の厚膜化はスループ
ットの低下を招き、電極間距離の縮小は変換素子製造上
の制約により限界がある。The driving force and detection sensitivity of the comb electrode are proportional to the change in capacitance with respect to displacement, and the driving force and detection sensitivity are proportional to the thickness of the floating body 5 and inversely proportional to the distance between the electrodes. However, an increase in the thickness of the semiconductor thin films (5 to 7) causes a decrease in throughput, and a reduction in the distance between the electrodes is limited by restrictions on the production of the conversion element.
【００１３】このため、駆動力および検出感度が十分と
いえず、従来の櫛歯電極では駆動力あるいは検出感度が
低く、所要駆動電圧が高いとか、Ｓ／Ｎ比が低いとかの
問題がある。駆動力を大きくするための駆動電圧の引上
げは、駆動電圧が浮遊容量等を介して検出電極に漏れる
電圧を高くするので、Ｓ／Ｎ比の更なる劣化を招く。本
発明は、浮動側電極と固定側電極との間の静電容量を高
くすることを第１の目的とし、センサとしての使用態様
においてはＳ／Ｎを高くすることを、アクチュエ−タと
しての使用態様においては所要駆動力を得るための駆動
電圧を低くすることを第２の目的とする。前述の振動子
（角速度センサ）としての使用態様においては比較的に
低い振動駆動電圧の印加で比較的に高い振動駆動力を得
ることを目的とする。For this reason, the driving force and the detection sensitivity cannot be said to be sufficient, and the conventional comb-tooth electrode has a problem that the driving force or the detection sensitivity is low, the required driving voltage is high, and the S / N ratio is low. Raising the driving voltage to increase the driving force increases the voltage at which the driving voltage leaks to the detection electrode via a stray capacitance or the like, thereby causing further deterioration of the S / N ratio. The first object of the present invention is to increase the capacitance between the floating-side electrode and the fixed-side electrode, and to increase the S / N in a mode of use as a sensor as an actuator. In a usage mode, a second object is to reduce a driving voltage for obtaining a required driving force. In the above-mentioned mode of use as a vibrator (angular velocity sensor), an object is to obtain a relatively high vibration driving force by applying a relatively low vibration driving voltage.
【００１４】[0014]
（１）本発明は、ｘｙ平面を有する基板(1)，該基板(1)
にｘ，ｙおよびｚ方向の少くとも一方向に振動可に支持
され基板(1)のｘｙ平面に平行な導電性の可動薄膜(5
h)、および、前記基板(1)に固定され可動薄膜(5h)の側
面に対向する面を有する固定電極(6,7,16,17)、を備え
る薄膜を用いた変換素子において、前記可動薄膜(5h)の
側面に接合した可動側付加電極(13c,13d)を備えること
を特徴とする。なお、理解を容易にするためにカッコ内
には、図面に示し後述する実施例の対応要素又は相当部
材に付した記号を、参考までに付記した。(1) The present invention provides a substrate (1) having an xy plane,
The conductive movable thin film (5) supported so as to vibrate in at least one of the x, y and z directions and parallel to the xy plane of the substrate (1).
h), and a fixed electrode (6, 7, 16, 17) fixed to the substrate (1) and having a surface facing the side surface of the movable thin film (5h), the conversion element using a thin film, The movable additional electrodes (13c, 13d) joined to the side surfaces of the thin film (5h) are provided. In addition, in order to facilitate understanding, in parentheses, symbols shown in the drawings and attached to corresponding elements or equivalent members of the embodiments described later are added for reference.
【００１５】これによれば、可動薄膜(5h)の側面に可動
側付加電極(13c,13d)があり、これがその厚み分、固定
電極(6,7,16,17)の側面との距離を短くしているので、
可動側付加電極と固定電極との間の距離が短く、両者間
の静電容量が大きい。したがって、センサとしての使用
態様においてはＳ／Ｎが高く、アクチュエ−タとしての
使用態様においては所要駆動電圧が低くてすむ。前述の
振動子（角速度センサ）としての使用態様においては振
動駆動電圧を下げることができる。可動薄膜(5h)の厚み
を格別に大きくする必要はない。According to this, the movable side additional electrodes (13c, 13d) are provided on the side surface of the movable thin film (5h), and the distance between the movable side additional electrodes (13c, 13d) and the side surfaces of the fixed electrodes (6, 7, 16, 17) is increased by the thickness. Because it is shortened,
The distance between the movable side additional electrode and the fixed electrode is short, and the capacitance between them is large. Therefore, the S / N is high in the mode of use as a sensor, and the required driving voltage is low in the mode of use as an actuator. In the mode of use as the vibrator (angular velocity sensor) described above, the vibration drive voltage can be reduced. The thickness of the movable thin film (5h) does not need to be particularly large.
【００１６】[0016]
（２）前記可動薄膜(5h)は、ｙ方向に延びる基幹(5h)お
よび該基幹(5h)より分岐してｘ方向に延び、ｙ方向にギ
ャップを置いて互に平行な複数個の可動側櫛歯(5e)を有
し；前記可動側付加電極(13c,13d)は該可動側櫛歯(5e)
の側面に接合され；前記固定電極(6,7,16,17)は、ｙ方
向に延びる基幹および該基幹より分岐してｘ方向に延び
て前記ギャップに位置する複数個の固定側櫛歯(6b,16b)
を有する。可動側櫛歯(5e)の付加電極(13c,13d)が固定
側櫛歯(6b,16b)とのギャップを縮めるので、細かく入り
組んだ可動側櫛歯(5e)と固定側櫛歯(6b,16b)のギャップ
が短く両者間の静電容量を大きくする効果が高い。(2) The movable thin film (5h) includes a base (5h) extending in the y direction and a plurality of movable sides parallel to each other with a gap in the y direction, branching from the base (5h) and extending in the x direction. Comb-shaped teeth (5e); said movable-side additional electrodes (13c, 13d) are movable-side comb-teeth (5e).
The fixed electrode (6, 7, 16, 17) has a backbone extending in the y direction and a plurality of fixed side comb teeth (branch extending from the backbone and extending in the x direction and located in the gap). 6b, 16b)
Having. Since the additional electrodes (13c, 13d) of the movable comb teeth (5e) reduce the gap with the fixed comb teeth (6b, 16b), the movable comb teeth (5e) and the fixed comb teeth (6b, The gap of 16b) is short and the effect of increasing the capacitance between them is high.
【００１７】（３）前記可動側櫛歯(5e)の側面に接合し
た可動側付加電極(13c,13d)に連接し、前記可動側櫛歯
(5e)の、基板(1)に対向する面の裏側のｘｙ背面に接合
した背面導体(9b)；を更に備える。これによれば、可動
薄膜(5h)の導電性が背面導体(9b)により高くなり、可動
薄膜(5)は絶縁体でもよい。また、背面導体(9b)を、基
板(1)のｘｙ平面に平行な電極（基板１上のｘｙ平面電
極と平行な対向電極）として用いることもできる。(3) The movable comb electrodes (13c, 13d) connected to the side surfaces of the movable comb teeth (5e) are connected to the movable comb electrodes (13c, 13d).
(5e) a back conductor (9b) joined to the xy back surface on the back side of the surface facing the substrate (1). According to this, the conductivity of the movable thin film (5h) is increased by the back conductor (9b), and the movable thin film (5) may be an insulator. Further, the back conductor (9b) can be used as an electrode parallel to the xy plane of the substrate (1) (a counter electrode parallel to the xy plane electrode on the substrate 1).
【００１８】（４）前記可動側付加電極(13c,13d)は、
前記可動薄膜(5h)のｚ方向の厚みより大きいｚ方向の幅
を有する。これによれば、付加電極(13c,13d)が可動薄
膜(5h)の膜厚より広幅であって電極面積が大きく、静電
容量増大効果が高い。(4) The movable side additional electrodes (13c, 13d)
The movable thin film (5h) has a width in the z direction larger than the thickness in the z direction. According to this, the additional electrodes (13c, 13d) are wider than the film thickness of the movable thin film (5h), the electrode area is large, and the effect of increasing the capacitance is high.
【００１９】（５）前記可動薄膜(5h)は半導体薄膜であ
り；前記可動側付加電極(13c,13d)は、導電性不純物を
ド−ピングしたＳi，Ｇe，ＳixＧe1-x，ＳiＣあるいは
ＳixＧeyＣ1-x-y、もしくは、金，白金，Ｖ，Ｎb，Ｔ
a，Ｗ，Ｍo，モリブデンシリサイドあるいはタングステ
ンシリサイドの内少なくとも１つである。(5) The movable thin film (5h) is a semiconductor thin film; the movable side additional electrodes (13c, 13d) are Si, Ge, SixGe1 -x , SiC or SixGeyC doped with conductive impurities. 1-xy or gold, platinum, V, Nb, T
a, W, Mo, molybdenum silicide or tungsten silicide.
【００２０】これによれば、可動薄膜(5h)を半導体加工
プロセスで微細なものに製造することができ、微細な変
換素子が得られる。微細であることにより、特に、可動
薄膜(5h)が薄いことによりその側面（ｘｚ面，ｙｚ面）
の面積が小さく、固定電極との間の側面対向による静電
容量が微量となるが、付加電極(13c,13d)により電極間
ギャップが短くなり、静電容量が大きくなる。上記
（４）の場合には更に静電容量が増大し、微小サイズで
はあるが、Ｓ／Ｎが高い機械変位／電気変換素子または
駆動電圧に対して機械変位が大きい電気／機械変位変換
素子が得られる。According to this, the movable thin film (5h) can be manufactured finely by a semiconductor processing process, and a fine conversion element can be obtained. The side surfaces (xz plane, yz plane) due to the fineness, particularly, the thin movable thin film (5h)
Is small and the capacitance due to the side facing the fixed electrode is small, but the gap between the electrodes is shortened by the additional electrodes (13c, 13d), and the capacitance is increased. In the case of the above (4), a capacitance is further increased, and a mechanical displacement / electrical conversion element having a small S / N but a high mechanical displacement with respect to a driving voltage, though having a small size, is used. can get.
【００２１】（６）基板(1)上にエッチング層(3)を形成
する工程，該エッチング層(3)より上層に半導体薄膜(5
〜7)を形成する工程，該半導体薄膜(5〜7)を、フォトリ
ソエッチングにより第１の櫛歯(5e)を有する浮動体(5h)
と第１の櫛歯(5e)にかみ合うように配された第２の櫛歯
(6b,16b)を有する固定体(6,7,16,17)に加工する工程、
および、前記エッチング層(3)の少なくとも一部を除去
して浮動体(5h)を基板(1)に対して可動にする工程、を
含む半導体薄膜を用いた変換素子の製造方法において、
上記半導体薄膜(5〜7)を櫛歯状に加工後、第１および第
２の櫛歯(5e,6b,16b)の少なくとも相対向面に導電体(13
a〜13f)を形成することを特徴とする、半導体薄膜を用
いた変換素子の製造方法。(6) A step of forming an etching layer (3) on the substrate (1), and forming a semiconductor thin film (5) above the etching layer (3).
Forming a floating body (5h) having first comb teeth (5e) by photolithographic etching;
And second comb teeth arranged to engage with the first comb teeth (5e)
(6b, 16b) processing to a fixed body having (6, 7, 16, 17),
And removing at least a part of the etching layer (3) and moving the floating body (5h) with respect to the substrate (1), comprising a method of manufacturing a conversion element using a semiconductor thin film,
After processing the semiconductor thin film (5 to 7) into a comb-like shape, a conductor (13) is formed on at least the opposing surfaces of the first and second comb-like teeth (5e, 6b, 16b).
a to 13f). A method for manufacturing a conversion element using a semiconductor thin film, the method comprising:
【００２２】これによれば、微小サイズではあるが、Ｓ
／Ｎが高くまた駆動電圧に対して機械変位が大きい変換
素子が得られる。According to this, although the size is small, S
A conversion element having a high / N and a large mechanical displacement with respect to the drive voltage can be obtained.
【００２３】（７）基板(1)上にエッチング層(3)を形成
する工程，エッチング層(3)より上層に半導体薄膜(5〜
7)を形成する工程，該半導体薄膜(5〜7)を、フォトリソ
エッチングにより前記基板(1)に対して実質上直交する
面を有する第１の電極(5e)を有する浮動体(5h)と第１の
電極(5e)と対になって平行平板電極を構成するように配
された第２の電極(6b,16b)を有する固定電極(6,16)に加
工する工程、および、前記エッチング層(3)の少なくと
も一部を除去して浮動体(5h)を基板(1)に対して可動に
する工程、を含む半導体薄膜を用いた変換素子の製造方
法において、上記半導体薄膜(5〜7)のフォトリソエッチ
ング後、第１および第２の電極(5e,6b，16b)の少なくと
も相対向面上に導電体(13a〜13f)を形成することを特徴
とする、半導体薄膜を用いた変換素子の製造方法。(7) Step of forming an etching layer (3) on the substrate (1), wherein a semiconductor thin film (5 to 5) is formed above the etching layer (3).
7) forming a semiconductor thin film (5-7) by photolithographic etching with a floating body (5h) having a first electrode (5e) having a surface substantially orthogonal to the substrate (1); Processing a fixed electrode (6, 16) having a second electrode (6b, 16b) arranged to form a parallel plate electrode in pairs with the first electrode (5e); Removing at least a part of the layer (3) and moving the floating body (5h) relative to the substrate (1), the method of manufacturing a conversion element using a semiconductor thin film, the semiconductor thin film (5 ~ 7) After the photolithographic etching of 7), conversion using a semiconductor thin film, characterized in that conductors (13a to 13f) are formed on at least opposing surfaces of the first and second electrodes (5e, 6b, 16b). Device manufacturing method.
【００２４】これによれば、微小サイズではあるが、Ｓ
／Ｎが高くまた駆動電圧に対して機械変位が大きい変換
素子が得られる。According to this, although the size is small, S
A conversion element having a high / N and a large mechanical displacement with respect to the drive voltage can be obtained.
【００２５】（８）前記半導体薄膜(5〜7)に対する導電
体の選択成長により、第１および第２の電極(5e,6b,16
b)の少なくとも相対向面上に導電体(13a〜13f)を形成す
る、上記（６）又は（７）。(8) The first and second electrodes (5e, 6b, 16) are selectively grown on the semiconductor thin films (5-7) by conductors.
(6) or (7), wherein the conductors (13a to 13f) are formed on at least the opposing surfaces in b).
【００２６】（９）導電体(13a〜13f)は、前記電極(5e,
6b,16b)と同一導電性にドーピングされたＳi，Ｇeまた
はＳixＧe1-x、もしくは、Ｗ又はＭoである上記
（８）。(9) The conductors (13a to 13f) are connected to the electrodes (5e,
The above (8), which is Si, Ge or SixGe 1-x doped with the same conductivity as 6b, 16b), or W or Mo.
【００２７】（１０）電界めっきにより前記導電体(13a
〜13f)を形成する、上記（６）又は（７）。(10) The conductor (13a
(13) or (7) above.
【００２８】（１１）前記半導体薄膜(5〜7)に対して導
電性薄膜を等方的に形成しそして異方性エッチングによ
り、第１および第２の電極(5e,6b,16b)の少なくとも相
対向面上には前記導電性薄膜を残し他は除去して前記導
電体(13a〜13f)を形成する、上記（６）又は（７）。(11) A conductive thin film is isotropically formed on the semiconductor thin films (5 to 7) and at least one of the first and second electrodes (5e, 6b, 16b) is anisotropically etched. The above (6) or (7), wherein the conductive film (13a to 13f) is formed by leaving the conductive thin film on the opposing surfaces and removing the others.
【００２９】（１２）上記導電性薄膜(13a〜13f)は、導
電性不純物をド−ピングしたＳi，Ｇe,SixＧe1-x，Ｓi
ＣあるいはＳixＧeyＣ1-x-y、もしくは、金，白金，
Ｖ，Ｎb，Ｔa，Ｗ，Ｍo，モリブデンシリサイドあるい
はタングステンシリサイドの内少なくとも１つである；
上記（１１）。(12) The conductive thin films (13a to 13f) are made of Si, Ge, SixGe 1-x , Si doped with conductive impurities.
C or SixGeyC 1-xy or gold, platinum,
At least one of V, Nb, Ta, W, Mo, molybdenum silicide or tungsten silicide;
The above (11).
【００３０】（１３）上記導電性薄膜(13a〜13f)の形成
にプラズマＣＶＤ法，熱ＣＶＤ法，スパッタ法およびめ
っき法の少なくとも一つを用いる；上記（１１）。(13) At least one of a plasma CVD method, a thermal CVD method, a sputtering method, and a plating method is used for forming the conductive thin films (13a to 13f);
【００３１】（１４）異方性エッチングは、イオンミリ
ング，ＥＣＲプラズマエッチング，ＲＩＥおよび他プラ
ズマを用いたエッチングの１つである；上記（１１）。(14) Anisotropic etching is one of ion milling, ECR plasma etching, RIE and etching using another plasma; the above (11).
【００３２】（１５）上記導電性薄膜(13a〜13f)の形成
前に半導体薄膜(5〜7)より下層に形成された薄膜(3)の
一部を少なくとも電極領域(5e,6b,16b)の半導体薄膜と
同一の形状にエッチングする；上記（１１）。(15) Before forming the conductive thin films (13a to 13f), at least a part of the thin film (3) formed below the semiconductor thin films (5 to 7) is formed at least in the electrode regions (5e, 6b, 16b). Etching into the same shape as the semiconductor thin film described in (11) above.
【００３３】（１６）上記半導体薄膜(5〜7)の電極領域
(5e,6b)の半導体薄膜より下層に形成された薄膜(3)のエ
ッチングは、半導体薄膜(5〜7)のエッチングと同一のマ
スク、又はエッチング後の半導体薄膜(5e,6b,16b)、を
マスクにする；上記（１５）。(16) Electrode area of the semiconductor thin film (5-7)
Etching of the thin film (3) formed below the semiconductor thin film of (5e, 6b) is the same mask as the etching of the semiconductor thin film (5 to 7), or the semiconductor thin film after etching (5e, 6b, 16b), Is used as a mask; (15) above.
【００３４】（１７）上記導電性薄膜(13a〜13f)の形成
前に少なくとも半導体薄膜(5〜7)の電極領域上部に半導
体薄膜(5〜7)と同一の形状の薄膜(11)を形成する；上記
（１１）。(17) Before forming the conductive thin films (13a to 13f), a thin film (11) having the same shape as the semiconductor thin films (5 to 7) is formed at least above the electrode regions of the semiconductor thin films (5 to 7). (11).
【００３５】（１８）上記半導体薄膜(5〜7)のエッチン
グにおけるマスクは、電極領域上部に形成した薄膜(11)
をエッチングする際のマスク(12)、又はエッチング後の
上記薄膜(11)である；上記（１７）。(18) The mask used in the etching of the semiconductor thin films (5 to 7) is a thin film (11) formed above the electrode region.
A mask (12) for etching the thin film or the thin film (11) after the etching; (17).
【００３６】（１９）上記薄膜(11)はエッチング層(3)
と同一の材質である；上記（１７）又は（１８）。(19) The thin film (11) is an etching layer (3)
The same material as described above; (17) or (18) above.
【００３７】（２０）上記（８），（１０）および（１
１）の工程の組み合わせ又は繰り返しで導電体(13a〜13
f)を形成する；上記（６）又は（７）。(20) The above (8), (10) and (1)
Conductors (13a to 13a) can be obtained by combining or repeating the steps 1).
f) is formed; (6) or (7) above.
【００３８】[0038]
−第１実施例− 図１に本発明の一実施例を示す。この実施例は、ｘ方向
の流速又は加速度を検出する流速センサ又は加速度セン
サ、もしくは浮動基幹５ｈをｘ方向に駆動するマイクロ
アクチュエ−タとして用いるものである。図３の（ｆ）
に、図１の３Ａ−３Ａ線断面を示す。-First Embodiment- FIG. 1 shows an embodiment of the present invention. In this embodiment, a flow velocity sensor or an acceleration sensor for detecting a flow velocity or an acceleration in the x direction or a microactuator for driving the floating trunk 5h in the x direction is used. (F) of FIG.
1 shows a cross section taken along line 3A-3A in FIG.
【００３９】図１および図３の（ｆ）を参照されたい。
絶縁層２を形成したシリコン基板１には、導電性とする
ための不純物を含むポリシリコンの、浮動体アンカ５ａ
〜５ｄおよび固定電極アンカ６ｃが接合しており、絶縁
層２上に形成された配線（６ｄ，７ｄ等）により、浮動
体５および、固定電極６，７，１６，１７は、接続電極
８に接続されている。なお、シリコン基板１に上記ポリ
シリコンの導電形（ｐ）と反対の導電性（ｎ）の基板を
用い、シリコン基板１にｐｎ接合により配線を形成し、
上記配線と浮動体アンカ５および固定電極アンカ６ｃと
接続電極８のアンカ部とを接合してもよい。浮動体アン
カ５ａ〜５ｄに、ｙ方向に延びる支持梁５ｉ〜５Ｌが連
続しており、これらの支持梁５ｉ〜５Ｌに、基板１の表
面に実質上平行な浮動基幹５ｈが連続している。Please refer to FIG. 1 and FIG.
On the silicon substrate 1 on which the insulating layer 2 is formed, a floating body anchor 5a made of polysilicon containing impurities for making it conductive.
5d and the fixed electrode anchor 6c are joined, and the floating body 5 and the fixed electrodes 6, 7, 16, 17 are connected to the connection electrode 8 by the wiring (6d, 7d, etc.) formed on the insulating layer 2. It is connected. Note that a substrate having conductivity (n) opposite to the conductivity type (p) of the polysilicon is used for the silicon substrate 1 and wiring is formed on the silicon substrate 1 by pn junction.
The wiring, the floating body anchor 5 and the fixed electrode anchor 6c, and the anchor portion of the connection electrode 8 may be joined. Support beams 5i to 5L extending in the y direction are continuous with the floating body anchors 5a to 5d, and a floating trunk 5h substantially parallel to the surface of the substrate 1 is continuous with these support beams 5i to 5L.
【００４０】浮動基幹５ｈから左右（ｘ方向）に、櫛歯
状にｙ方向に等ピッチで分布する複数個の可動側櫛歯５
ｅ，５ｆが突出している。１つの固定電極アンカ６ｃ
（接続電極８ｂの直下）には、固定電極６の基幹６ａが
連続しており、基幹６ａには可動側櫛歯５ｅの歯間スロ
ットに進入した、櫛歯状の固定櫛歯電極６ｂがあり、も
う１つの固定電極アンカ（接続電極８ｃの直下）には、
固定電極７の基幹７ａが連続しており、基幹７ａには可
動側櫛歯５ｆの歯間スロットに進入した、櫛歯状の固定
櫛歯電極７ｂがある。これらの可動側櫛歯５ｅ，５ｆと
固定櫛歯電極６ｂ，７ｂとの間には微小ギャップがあ
る。A plurality of movable comb teeth 5 distributed in the y direction in the right and left directions (x direction) at equal pitches from the floating backbone 5h.
e and 5f protrude. One fixed electrode anchor 6c
The base 6a of the fixed electrode 6 is continuous (just below the connection electrode 8b), and the base 6a has a comb-shaped fixed comb electrode 6b that has entered the inter-tooth slot of the movable comb tooth 5e. The other fixed electrode anchor (directly below the connection electrode 8c)
The base 7a of the fixed electrode 7 is continuous, and the base 7a has a comb-shaped fixed comb electrode 7b that has entered the inter-tooth slot of the movable comb tooth 5f. There is a minute gap between the movable comb teeth 5e, 5f and the fixed comb electrodes 6b, 7b.
【００４１】上述の、支持梁５ｉ〜５Ｌ，浮動基幹５ｈ
および固定櫛歯電極６ｂ，７ｂは、基板１の表面からｚ
方向に離れている。すなわち基板１の表面に、ギャップ
を置いて対向している。これらは、浮動体アンカおよび
固定電極アンカを、マイクロ加工技術によりシリコン基
板１の表面上に形成するときに、浮動体アンカおよび固
定電極アンカに、一体連続で形成される。The above-mentioned support beams 5i to 5L, floating base 5h
And the fixed comb-teeth electrodes 6b, 7b
Away in direction. That is, it faces the surface of the substrate 1 with a gap. These are formed integrally and continuously with the floating body anchor and the fixed electrode anchor when the floating body anchor and the fixed electrode anchor are formed on the surface of the silicon substrate 1 by a micromachining technique.
【００４２】浮動体５（支持梁５ｉ〜５Ｌ，浮動基幹５
ｈ）および固定電極６，７の側面（基板１のｘｙ面に対
して垂直な面）すなわちｘｚ面およびｙｚ面には、導電
体が接合されている。図３の（ｆ）に示す１３ｃ，１３
ｄが可動側櫛歯５ｅの側面に接合された導電体、１３
ａ，１３ｂが固定櫛歯電極６ｂの側面に接合された導電
体である。Floating body 5 (supporting beams 5i to 5L, floating backbone 5
h) and side surfaces of the fixed electrodes 6 and 7 (planes perpendicular to the xy plane of the substrate 1), that is, the xz plane and the yz plane, are joined with conductors. 13c and 13 shown in FIG.
d is a conductor joined to the side surface of the movable comb tooth 5e, 13
Reference numerals a and 13b denote conductors joined to the side surfaces of the fixed comb electrode 6b.
【００４３】側面に導電体１３ａ〜１３ｄが接合されて
いることにより、可動側櫛歯５ｅと固定櫛歯電極６ｂの
間のギャップ（ｘ，ｙ方向、特にｙ方向）が小さくなっ
ており、これにより可動側櫛歯５ｅの導電体１３ｃ，１
３ｄと固定櫛歯電極６ｂとの静電容量が大きい。後述す
るように可動側櫛歯５ｅおよび固定櫛歯電極６ｂは、フ
ォトリソエッチングで微細に形成するが、この製造工程
上の制約から可動側櫛歯５ｅと固定櫛歯電極６ｂとのｙ
方向ギャップを短くするには限度があるが、導電体１３
ａ〜１３ｄの形成によりこのギャップを該限度よりも更
に短くすることが可能であり、その分静電容量を大きく
することができる。Since the conductors 13a to 13d are joined to the side surfaces, the gap (x and y directions, especially y direction) between the movable comb tooth 5e and the fixed comb tooth electrode 6b is reduced. The conductors 13c, 1 of the movable comb teeth 5e
The capacitance between 3d and the fixed comb electrode 6b is large. As described later, the movable comb teeth 5e and the fixed comb electrodes 6b are finely formed by photolithographic etching.
Although there is a limit to shorten the direction gap, the conductor 13
With the formation of a to 13d, this gap can be made shorter than the limit, and the capacitance can be increased accordingly.
【００４４】次に、図１に示す変換素子の製造工程を説
明する。図３の（ａ）〜（ｅ）には、図１に示す３Ａ−
３Ａ線の断面対応の、製造途上の断面を示す。Next, the manufacturing process of the conversion element shown in FIG. 1 will be described. FIGS. 3A to 3E show 3A-
3 shows a cross section in the process of manufacture corresponding to the cross section of line 3A.
【００４５】Ａ．Ｓi基板を基板１として用い〔図２の
（ａ）〕、ＬＰ−ＣＶＤ法により絶縁層２としてＳi3Ｎ
4膜を１００ｎｍ形成し〔図２の（ｂ）〕、さらにＬＰ
−ＣＶＤ法によりエッチング層３としてＰＳＧ膜を２μ
ｍ形成する。A. An Si substrate was used as the substrate 1 (FIG. 2A), and Si 3 N was used as the insulating layer 2 by LP-CVD.
Four films were formed to a thickness of 100 nm [FIG.
-2 μm PSG film as etching layer 3 by CVD method
m.
【００４６】Ｂ．次にフォトリソエッチング工程によ
り、後に形成するＰドープ多結晶Ｓiからなる浮動体５
を基板１上に保持するための支持部４ａ〜４ｄ、固定櫛
歯電極６，７を固定するための支持部４ｅ，４ｆ、配線
及びパッド部４ｇ〜４ｉのＰＳＧ膜３をエッチングし、
Ｓｉ3Ｎ4膜２を露出させる〔図２の（ｃ）〕。B. Next, a floating body 5 made of P-doped polycrystalline Si to be formed later is formed by a photolithography etching process.
Etching the PSG film 3 of the support portions 4a to 4d for holding the substrate on the substrate 1, the support portions 4e and 4f for fixing the fixed comb electrodes 6 and 7, the wiring and the pad portions 4g to 4i,
The Si 3 N 4 film 2 is exposed [FIG. 2 (c)].
【００４７】Ｃ．次にＬＰ−ＣＶＤ法によりＰドープ多
結晶Ｓｉ薄膜５〜７（基板１の表面領域全面）を２μｍ
形成し、さらにＬＰ−ＣＶＤ法によりＰＳＧ膜１１を１
００ｎｍ形成する〔図３の（ａ）〕。なお、上記ＰＳＧ
膜１１はなくてもよく、又、ＰＳＧ膜１１の代わりにＳ
ｉＯ2膜，ＳｉＮ膜を用いても良い。C. Next, the P-doped polycrystalline Si thin films 5 to 7 (entire surface area of the substrate 1) are formed to a thickness of 2 μm by LP-CVD.
Then, the PSG film 11 is formed by LP-CVD.
It is formed to a thickness of 00 nm (FIG. 3A). The above PSG
The film 11 may not be provided, and instead of the PSG film 11, S
An iO 2 film or SiN film may be used.
【００４８】Ｄ．次にレジストパターン１２を形成し
〔図３の（ｂ）〕、上記レジストパターン１２をマスク
として、異方性エッチングにより、上記多結晶Ｓｉ薄膜
５〜７およびＰＳＧ膜１１を、所望とする浮動板５ｈ，
梁５ｉ〜５Ｌ，固定電極６，７，櫛歯電極５ｅ，５ｆ，
６ｂ，７ｂ，配線６ｄ，７ｄ，電極パツド５ｇ，６ｃ，
７ｃ等の形状にエッチングして〔図３の（ｃ）〕、レジ
ストパターン１２を除去する〔図２の（ｄ），図３の
（ｄ）〕。D. Next, a resist pattern 12 is formed (FIG. 3 (b)), and the polycrystalline Si thin films 5 to 7 and the PSG film 11 are removed by anisotropic etching using the resist pattern 12 as a mask. 5h,
Beams 5i-5L, fixed electrodes 6, 7, comb electrodes 5e, 5f,
6b, 7b, wiring 6d, 7d, electrode pads 5g, 6c,
Etching into a shape such as 7c [FIG. 3 (c)], and removing the resist pattern 12 [FIG. 2 (d), FIG. 3 (d)].
【００４９】Ｅ．次にＬＰ−ＣＶＤ法により、導電体と
してＰドープ多結晶Ｓｉ薄膜１３ａ〜１３ｄを選択成長
により形成し、電極間距離を所望の距離にする〔図３の
（ｅ）〕。E. Next, P-doped polycrystalline Si thin films 13a to 13d are formed as conductors by selective growth by LP-CVD, and the distance between the electrodes is set to a desired distance (FIG. 3E).
【００５０】なお、上記多結晶Ｓi ５〜７，導電体１３
ａ〜１３ｄはｐ型でも良く、アンドープで形成してイオ
ン注入，拡散等によりドーピングしても良い。The polycrystalline Si 5-7 and the conductor 13
a to 13d may be p-type, may be formed undoped, and may be doped by ion implantation, diffusion, or the like.
【００５１】Ｆ．次に内部応力緩和と不純物の活性化を
目的として熱処理を行う。なお、熱処理前に表面に保護
膜としてＰＳＧ膜，ＳiＯ2膜，ＳiＮ膜等を形成し、熱
処理後除去しても良い。F. Next, heat treatment is performed for the purpose of relaxing internal stress and activating impurities. Note that a PSG film, SiO 2 film, SiN film or the like may be formed as a protective film on the surface before the heat treatment, and may be removed after the heat treatment.
【００５２】導電体１３ａ〜１３ｄの形成はＧe，Ｍo，
Ｗの選択成長でもよく、金等の電界めっきでもよい，な
お、導電体１３ａ〜１３ｄが金属である場合、熱処理は
導電体１３ａ〜１３ｄ形成前に行うことが好ましい。The conductors 13a to 13d are formed by using Ge, Mo,
Selective growth of W or electroplating of gold or the like may be used. When the conductors 13a to 13d are metal, it is preferable to perform the heat treatment before forming the conductors 13a to 13d.
【００５３】Ｇ．上記熱処理後、従来例と同様に電極パ
ッド５ｇ，６ｃ，７ｃ上に接続電極（金属）８ａ〜８ｃ
を形成する〔図２の（ｅ）〕。そして、マスク層１１お
よびエッチング層３を除去する〔図１，図２の（ｆ），
図３の（ｆ）〕。これにより、浮動板５ｈ，梁５ｉ〜５
Ｌおよび櫛歯電極５ｅ，５ｆ，６ｂ，７ｂと基板１間に
空隙ができ、浮動基幹５ｈおよび梁５ｉ〜５Ｌが可動に
なる。なお、導電体１３ａ〜１３ｄを金属とする場合、
電極パッド５ｇ，６ｃ，７ｃ上への接続電極８ａ〜８ｃ
の形成も同時に行うことも可能である。G. After the heat treatment, the connection electrodes (metal) 8a to 8c are formed on the electrode pads 5g, 6c, and 7c as in the conventional example.
Is formed [FIG. 2 (e)]. Then, the mask layer 11 and the etching layer 3 are removed [(f) of FIGS.
FIG. 3 (f)]. As a result, the floating plate 5h and the beams 5i-5
A gap is formed between the L and the comb electrodes 5e, 5f, 6b, 7b and the substrate 1, and the floating trunk 5h and the beams 5i to 5L become movable. When the conductors 13a to 13d are made of metal,
Connection electrodes 8a to 8c on electrode pads 5g, 6c, 7c
Can be formed at the same time.
【００５４】このように製造された変換素子（図１）で
は、導電体１３ａ〜１３ｄにより、従来例の櫛歯電極に
比べて櫛歯電極間距離が短縮し、流速センサ又は加速度
センサとして用いる場合には、浮動板５ｈのｘ方向の変
位に対する可動櫛歯電極５ｅ，５ｆと固定櫛歯電極６
ｂ，７ｂ間の静電容量の変化が大きく、Ｓ／Ｎが高い。
可動櫛歯電極５ｅ，５ｆと固定櫛歯電極６ｂ，７ｂ間に
駆動電圧又は振動電圧を加えて浮動板５ｈをｘ方向に駆
動するアクチュエ−タ又は浮動板５ｈをｘ方向に励振す
る角速度センサに用いる場合には、浮動板５ｈの駆動力
の増加が可能となる。In the conversion element (FIG. 1) manufactured as described above, the distance between the interdigital electrodes is shorter than that of the conventional interdigital electrode due to the conductors 13a to 13d. The movable comb electrodes 5e and 5f and the fixed comb electrode 6 for the displacement of the floating plate 5h in the x direction
The change in capacitance between b and 7b is large, and the S / N is high.
An actuator for applying a driving voltage or an oscillating voltage between the movable comb electrodes 5e, 5f and the fixed comb electrodes 6b, 7b to drive the floating plate 5h in the x direction or an angular velocity sensor for exciting the floating plate 5h in the x direction. When used, the driving force of the floating plate 5h can be increased.
【００５５】−第２実施例− 図４の（ａ）〜（ｅ）には、図１に示す３Ａ−３Ａ線の
断面対応の、第２実施例の製造途上の断面を示す。第２
実施例では、第１実施例の上記Ｃ．の工程において、Ｌ
Ｐ−ＣＶＤ法によりＰドープ多結晶Ｓｉ薄膜５〜７（基
板１の全面）を２μｍ形成した後、後に形成するレジス
トパターン１２と同一パタ−ンの導電体層パタ−ン９
（９ａ，９ｂ）を形成してから〔図４の（ａ）〕、さら
にＬＰ−ＣＶＤ法によりＰＳＧ膜１１を１００ｎｍ形成
する〔図４の（ｂ）〕。この後の製造工程〔図４の
（ｂ）〜（ｇ）〕は、上述の第１実施例〔図３の（ａ）
〜（ｆ）〕と同様である。Second Embodiment FIGS. 4A to 4E show cross sections of the second embodiment in the process of manufacturing, corresponding to the cross section taken along line 3A-3A shown in FIG. Second
In the embodiment, the above C.I. In the step of
After forming P-doped polycrystalline Si thin films 5 to 7 (entire surface of substrate 1) at 2 μm by P-CVD, a conductor layer pattern 9 having the same pattern as resist pattern 12 to be formed later is formed.
After forming (9a, 9b) [FIG. 4 (a)], a PSG film 11 is formed to a thickness of 100 nm by LP-CVD [FIG. 4 (b)]. The subsequent manufacturing steps ((b) to (g) of FIG. 4) are performed in the first embodiment described above ((a) of FIG. 3).
To (f)].
【００５６】この実施例によれば、浮動基幹５ｈ，梁５
ｉ〜５Ｌ，固定電極６，７，櫛歯電極５ｅ，５ｆ，６
ｂ，７ｂ，配線６ｄ，７ｄ，電極パツド５ｇ，６ｃ，７
ｃ等の、基板１のｘｙ平面に対向する面の背面（ｘｙ
面）に導電体９ａ，９ｂが形成され、櫛歯部のｙｚ断面
において、導電体１３ａ〜１３ｄ，９ａ，９ｂがコの字
形〔図４の（ｇ）〕となる。なお、導電体層パタ−ン９
（９ａ，９ｂ）〔図４の（ａ）〕のパタ−ン形状を変更
して、背面導電体の分布および形状を任意に定めること
ができる。According to this embodiment, the floating trunk 5h and the beam 5
i to 5L, fixed electrodes 6, 7, comb electrodes 5e, 5f, 6
b, 7b, wiring 6d, 7d, electrode pads 5g, 6c, 7
c, etc., on the back surface (xy
The conductors 9a and 9b are formed on the (surface), and the conductors 13a to 13d, 9a and 9b have a U-shape (FIG. 4 (g)) in the yz cross section of the comb tooth portion. The conductor layer pattern 9
(9a, 9b) The distribution and shape of the back conductor can be arbitrarily determined by changing the pattern shape shown in FIG.
【００５７】−第３実施例− 図５の（ａ）〜（ｇ）には、図１に示す３Ａ−３Ａ線の
断面対応の、第３実施例の製造途上の断面を示す。この
第３実施例でも、第１実施例と同様に、Ａ．〜Ｄ．に
て、多結晶Ｓｉ薄膜５〜７およびＰＳＧ膜１１を、所望
とする浮動基幹５ｈ，梁５ｉ〜５Ｌ，固定電極６，７，
櫛歯電極５ｅ，５ｆ，６ｂ，７ｂ，配線６ｄ，７ｄ，電
極パツド５ｇ，６ｃ，７ｃ等の形状にエッチングして、
レジストパターン１２を除去する〔図２の（ａ）〜
（ｄ），図５の（ａ）〜（ｄ）〕。Third Embodiment FIGS. 5A to 5G show cross sections in the process of manufacturing the third embodiment corresponding to the cross section taken along line 3A-3A shown in FIG. In the third embodiment, as in the first embodiment, the A.I. ~ D. At this time, the polycrystalline Si thin films 5 to 7 and the PSG film 11 are converted into the desired floating backbone 5h, beams 5i to 5L, fixed electrodes 6, 7, and
Etching into the shape of the comb-teeth electrodes 5e, 5f, 6b, 7b, wirings 6d, 7d, electrode pads 5g, 6c, 7c, etc.
The resist pattern 12 is removed [FIGS.
(D), (a) to (d) of FIG.
【００５８】Ｅ．次にＬＰ−ＣＶＤ法によりＰドープ多
結晶Ｓｉ薄膜１３を形成し、電極間距離を所望の距離に
する〔図５の（ｅ）〕。なお、上記多結晶Ｓi ５〜７，
導電体１３はｐ型でも良く、アンドープで形成してイオ
ン注入，拡散等によりドーピングしても良い。E. Next, a P-doped polycrystalline Si thin film 13 is formed by the LP-CVD method, and the distance between the electrodes is set to a desired distance (FIG. 5E). The above polycrystal Si 5-7,
The conductor 13 may be p-type, or may be formed undoped and doped by ion implantation, diffusion, or the like.
【００５９】また、導電体１３は、Ｇe，ＳixＧe1-x，
ＳiＣ，ＳixＧeyＣ1-x-y，金，白金，Ｖ，Ｎb，Ｔa，
Ｗ，Ｍo，モリブデンシリサイドあるいはタングステン
シリサイドでもよく、形成方法としては常圧ＣＶＤ法，
プラズマＣＶＤ法，スパッタ法等、等方的に生成できる
（ステップカバレージの良い）手段なら良い。The conductor 13 is made of Ge, SixGe 1-x ,
SiC, SixGeyC 1-xy , gold, platinum, V, Nb, Ta,
W, Mo, molybdenum silicide or tungsten silicide may be used.
Any means that can be generated isotropically (having good step coverage) such as a plasma CVD method and a sputtering method may be used.
【００６０】Ｆ．次に内部応力緩和と不純物の活性化を
目的として熱処理を行う。なお、熱処理前に表面に保護
膜としてＰＳＧ膜，ＳｉＯ2膜，ＳｉＮ膜等を形成し、
熱処理後除去しても良い。なお、導電体１３が金属であ
る場合、熱処理は導電体１３形成前に行うことが好まし
い。F. Next, heat treatment is performed for the purpose of relaxing internal stress and activating impurities. Before the heat treatment, a PSG film, a SiO 2 film, a SiN film, etc. are formed on the surface as a protective film.
It may be removed after the heat treatment. When the conductor 13 is a metal, the heat treatment is preferably performed before the conductor 13 is formed.
【００６１】Ｇ．次にＲｌＥにより、導電体１３をエッ
チングすることにより基板１に対して直交する面（ｘｚ
面，ｙｚ面）上に形成された導電体１３（１３ａ〜１３
ｄ）のみを残し、基板１と平行に形成された導電体１３
を除去する〔図５の（ｆ）〕。なお、上記ＲｌＥによる
導電体２５のエッチングの代わりに、ＥＣＲプラズマエ
ッチング法等プラズマ又はイオンによる異方性化学エッ
チングでも良く、イオンミリングのような物理的異方性
エッチングでも良い。G. Next, the conductor 13 is etched by RIE so that a plane orthogonal to the substrate 1 (xz
Conductors 13 (13a to 13a) formed on
The conductor 13 formed parallel to the substrate 1 except for d)
Is removed [(f) of FIG. 5]. In place of the etching of the conductor 25 by RIE, anisotropic chemical etching using plasma or ions such as ECR plasma etching or physical anisotropic etching such as ion milling may be used.
【００６２】Ｈ．上記導電体１３のエッチング理後、従
来例と同様に電極パッド５ｇ，６ｃ，７ｃ上に接続電極
（金属）８ａ〜８ｃを形成する〔図２の（ｅ）〕。そし
て、マスク層１１およびエッチング層３を除去する〔図
１，図２の（ｆ），図５の（ｇ）〕。これにより、浮動
基幹５ｈ，梁５ｉ〜５Ｌおよび櫛歯電極５ｅ，５ｆ，６
ｂ，７ｂと基板１間に空隙ができ、浮動基幹５ｈおよび
梁５ｉ〜５Ｌが可動になる。H. After the etching of the conductor 13, connection electrodes (metals) 8a to 8c are formed on the electrode pads 5g, 6c and 7c in the same manner as in the conventional example [FIG. 2 (e)]. Then, the mask layer 11 and the etching layer 3 are removed [FIGS. 1 and 2 (f) and FIG. 5 (g)]. Thereby, the floating trunk 5h, the beams 5i to 5L, and the comb electrodes 5e, 5f, 6
An air gap is formed between b and 7b and the substrate 1, and the floating trunk 5h and the beams 5i to 5L become movable.
【００６３】−第４実施例− 図６の（ａ）〜（ｇ）には、図１に示す３Ａ−３Ａ線の
断面対応の、第４実施例の製造途上の断面を示す。この
第４実施例でも、第１実施例と同様に、Ａ．〜Ｃ．に
て、多結晶Ｓｉ薄膜５〜７およびＰＳＧ膜１１を、所望
とする浮動基幹５ｈ，梁５ｉ〜５Ｌ，固定電極６，７，
櫛歯電極５ｅ，５ｆ，６ｂ，７ｂ，配線６ｄ，７ｄ，電
極パツド５ｇ，６ｃ，７ｃ等の形状にエッチングする
〔図２の（ａ）〜（ｃ），図６の（ａ）〜（ｃ）〕。た
だしエッチング層３を４μｍとする。Ｄ．多結晶Ｓｉ薄
膜１１のエッチングパターンと同一のパターンのマスク
１２により（同一のレジストマスクでも良く、パターニ
ング後の多結晶Ｓｉ薄膜１１をマスクとしても良い）、
エッチング層３を２μｍエッチングすることによりエッ
チング層３を、マスクされた部位では４μｍであるが、
露出部では２μｍと下った形状とする〔図６の
（ｄ）〕。以降の処理は、上述の第３実施例のＥ．〜
Ｈ．の処理と同様である。Fourth Embodiment FIGS. 6A to 6G show cross sections in the process of manufacturing the fourth embodiment corresponding to the cross section taken along line 3A-3A shown in FIG. In the fourth embodiment, as in the first embodiment, A.I. ~ C. At this time, the polycrystalline Si thin films 5 to 7 and the PSG film 11 are converted into the desired floating backbone 5h, beams 5i to 5L, fixed electrodes 6, 7, and
Etching into the shape of the comb electrodes 5e, 5f, 6b, 7b, wirings 6d, 7d, electrode pads 5g, 6c, 7c, etc. [(a) to (c) in FIG. 2 and (a) to (c) in FIG. )]. However, the thickness of the etching layer 3 is 4 μm. D. By using a mask 12 having the same pattern as the etching pattern of the polycrystalline Si thin film 11 (the same resist mask may be used, or the patterned polycrystalline Si thin film 11 may be used as a mask).
By etching the etching layer 3 by 2 μm, the thickness of the etching layer 3 is 4 μm at the masked portion.
The exposed portion has a shape of 2 μm (FIG. 6D). Subsequent processing is performed in accordance with E.3 of the third embodiment. ~
H. The processing is the same as that described above.
【００６４】この第４実施例によれば、図６の（ｇ）に
示すように、導電体１３ａ〜１３ｄが、櫛歯５ｅ，６ｂ
よりも略２μｍ基板１側に延び、広幅（ｚ）となってお
り、可動櫛歯５ｅの導電体１３ｃ，１３ｄと固定櫛歯６
ｂの導電体１３ａ，１３ｂとの対向面積が大きく、導電
体１３ａ〜１３ｄによる電極間ギャップの縮小による静
電容量の増大に加えて、対向面積の増大による静電容量
の増大が加わり、流速センサ又は加速度センサとして用
いる場合には、浮動基幹５ｈのｘ方向の変位に対する可
動櫛歯電極５ｅ，５ｆと固定櫛歯電極６ｂ，７ｂ間の静
電容量の変化が更に大きく、Ｓ／Ｎが高い。可動櫛歯電
極５ｅ，５ｆと固定櫛歯電極６ｂ，７ｂ間に駆動電圧又
は振動電圧を加えて浮動基幹５ｈをｘ方向に駆動するア
クチュエ−タ又は浮動基幹５ｈをｘ方向に励振する角速
度センサに用いる場合には、浮動基幹５ｈの駆動力が更
に増加する。According to the fourth embodiment, as shown in FIG. 6G, the conductors 13a to 13d are
The conductors 13c and 13d of the movable comb teeth 5e and the fixed comb teeth 6
b has a large opposing area with the conductors 13a and 13b. In addition to an increase in capacitance due to a reduction in the gap between the electrodes by the conductors 13a to 13d, an increase in capacitance due to an increase in the opposing area is added. Alternatively, when used as an acceleration sensor, the change in the capacitance between the movable comb electrodes 5e, 5f and the fixed comb electrodes 6b, 7b with respect to the displacement of the floating trunk 5h in the x direction is even greater, and the S / N is high. An actuator for applying a driving voltage or an oscillating voltage between the movable comb electrodes 5e, 5f and the fixed comb electrodes 6b, 7b to drive the floating trunk 5h in the x direction or an angular velocity sensor for exciting the floating trunk 5h in the x direction. When used, the driving force of the floating trunk 5h further increases.
【００６５】−第５実施例− 図７の（ａ）〜（ｇ）には、図１に示す３Ａ−３Ａ線の
断面対応の、第５実施例の製造途上の断面を示す。この
第５実施例でも、第１実施例と同様に、Ａ．〜Ｃ．に
て、多結晶Ｓｉ薄膜５〜７およびＰＳＧ膜１１を、所望
とする浮動基幹５ｈ，梁５ｉ〜５Ｌ，固定電極６，７，
櫛歯電極５ｅ，５ｆ，６ｂ，７ｂ，配線６ｄ，７ｄ，電
極パツド５ｇ，６ｃ，７ｃ等の形状にエッチングする
〔図２の（ａ）〜（ｃ），図６の（ａ）〜（ｃ）〕。た
だし、ＰＳＧ膜１１を２μｍとする。それ以降の処理
は、上述の第３実施例のＥ．〜Ｈ．の処理と同様であ
る。Fifth Embodiment FIGS. 7A to 7G show cross sections of the fifth embodiment in the process of manufacture, corresponding to the cross section taken along line 3A-3A shown in FIG. In the fifth embodiment, as in the first embodiment, A.I. ~ C. At this time, the polycrystalline Si thin films 5 to 7 and the PSG film 11 are converted into the desired floating backbone 5h, beams 5i to 5L, fixed electrodes 6, 7, and
Etching into the shape of the comb electrodes 5e, 5f, 6b, 7b, wirings 6d, 7d, electrode pads 5g, 6c, 7c, etc. [(a) to (c) in FIG. 2 and (a) to (c) in FIG. )]. However, the PSG film 11 is 2 μm. Subsequent processing is performed in accordance with E.3 of the third embodiment. ~ H. The processing is the same as that described above.
【００６６】この第５実施例によれば、図７の（ｇ）に
示すように、導電体１３ａ〜１３ｄが、櫛歯５ｅ，６ｂ
よりも略２μｍ基板１より離れる方向（ｚ）に延び、可
動櫛歯５ｅの導電体１３ｃ，１３ｄと固定櫛歯６ｂの導
電体１３ａ，１３ｂとの対向面積が大きい。According to the fifth embodiment, as shown in FIG. 7 (g), the conductors 13a to 13d are
In this case, the conductors 13c and 13d of the movable comb teeth 5e and the conductors 13a and 13b of the fixed comb teeth 6b have a larger opposing area.
【００６７】−第６実施例− この第６実施例でも、第１実施例と同様に、Ａ．〜Ｃ．
にて、多結晶Ｓｉ薄膜５〜７およびＰＳＧ膜１１を、所
望とする浮動基幹５ｈ，梁５ｉ〜５Ｌ，固定電極６，
７，櫛歯電極５ｅ，５ｆ，６ｂ，７ｂ，配線６ｄ，７
ｄ，電極パツド５ｇ，６ｃ，７ｃ等の形状にエッチング
する〔図２の（ａ）〜（ｃ），図６の（ａ）〜
（ｃ）〕。ただし、エッチング層３を４μｍとし、ＰＳ
Ｇ膜１１を２μｍとする。-Sixth Embodiment- In this sixth embodiment, as in the first embodiment, the A.I. ~ C.
At this time, the polycrystalline Si thin films 5 to 7 and the PSG film 11 are converted to the desired floating backbone 5h, beams 5i to 5L, fixed electrodes 6,
7, comb-teeth electrodes 5e, 5f, 6b, 7b, wirings 6d, 7
d, etching into electrode pads 5g, 6c, 7c, etc. [(a) to (c) in FIG. 2, (a) to (a) in FIG.
(C)]. However, the etching layer 3 is set to 4 μm, and PS
The thickness of the G film 11 is 2 μm.
【００６８】それ以降の処理は、上述の第４実施例の
Ｄ．以下の処理と同様である。The subsequent processing is the same as that of the above-described fourth embodiment. This is the same as the following processing.
【００６９】この第６実施例によれば、導電体１３ａ〜
１３ｄは、図６の（ｇ）に示す、櫛歯５ｅ，６ｂよりも
基板１近くに下がった付加幅と、図７の（ｇ）に示す、
櫛歯５ｅ，６ｂよりも基板１より上方に延びた付加幅と
を、櫛歯厚（ｚ方向）に加えた分の幅を有し、可動櫛歯
５ｅの導電体１３ｃ，１３ｄと固定櫛歯６ｂの導電体１
３ａ，１３ｂとの対向面積がきわめて大きい。According to the sixth embodiment, the conductors 13a to 13a
13d is the additional width shown in FIG. 6 (g), which is closer to the substrate 1 than the comb teeth 5e, 6b, and FIG. 7 (g).
The conductors 13c and 13d of the movable comb teeth 5e and the fixed comb teeth have a width obtained by adding the additional width extending above the substrate 1 beyond the comb teeth 5e and 6b to the comb tooth thickness (z direction). 6b conductor 1
The area facing 3a and 13b is extremely large.
【００７０】以上に説明した第１〜６実施例はいずれ
も、対になる電極の重なりによるコンデンサとして働く
有効電極面積の変化による容量変動による静電駆動及び
検出に用いられる櫛歯状電極について説明したが、上述
の各実施例の製造工程と同様の工程を用いることによ
り、電極間距離の変化による容量変動による静電駆動及
び検出に用いられる平行平板電極に対しても駆動力及び
検出信号の増加が期待できる。この平行平板電極の実施
例の数例を次に説明する。Each of the first to sixth embodiments described above describes a comb-shaped electrode used for electrostatic drive and detection due to a capacitance change due to a change in the effective electrode area acting as a capacitor due to the overlapping of the paired electrodes. However, by using the same process as the manufacturing process of each of the above-described embodiments, the driving force and the detection signal of the parallel plate electrode used for the electrostatic driving and detection due to the capacitance change due to the change in the distance between the electrodes are also used. We can expect an increase. Several examples of the embodiment of the parallel plate electrode will be described below.
【００７１】−第７実施例− 図８に、本発明の第７実施例を示し、その９Ａ−９Ａ線
断面を図９の（ａ）に示す。この変換素子は、ｙ方向の
加速度を検出する加速度センサ，ｙ方向の流速を検出す
る流速センサ、又は、浮動基幹５ｈをｙ方向に駆動する
マイクロアクチュエ−タとして用いられるものである。Seventh Embodiment FIG. 8 shows a seventh embodiment of the present invention, and FIG. 9A shows a cross section taken along line 9A-9A. This conversion element is used as an acceleration sensor for detecting acceleration in the y direction, a flow rate sensor for detecting a flow rate in the y direction, or a microactuator for driving the floating trunk 5h in the y direction.
【００７２】図８および図９の（ａ）を参照されたい。
絶縁体のシリコン基板１には、導電性とするための不純
物を含むポリシリコンの、浮動体アンカおよび固定電極
アンカが接合している。浮動体アンカに、ｘ方向に延び
る支持梁５ｉ〜５Ｌが連続しており、これらの支持梁５
ｉ〜５Ｌに、基板１の表面に実質上平行な浮動基幹５ｈ
が連続している。Please refer to FIG. 8 and FIG.
A floating body anchor and a fixed electrode anchor made of polysilicon containing an impurity to make it conductive are joined to the insulating silicon substrate 1. Support beams 5i to 5L extending in the x direction are continuous with the floating body anchor.
i to 5L, a floating backbone 5h substantially parallel to the surface of the substrate 1
Is continuous.
【００７３】浮動基幹５ｈから左右（ｘ方向）に、櫛歯
状にｙ方向に等ピッチで分布する複数個の可動側櫛歯５
ｅが突出している。１つの固定電極アンカ（接続電極８
ｂの直下）には、第１組の第１固定電極６の基幹が連続
しており、該基幹には可動側櫛歯５ｅの歯間スロットに
進入した、第１組の第１グル−プの櫛歯状の固定櫛歯電
極６ｂがあり、もう１つの固定電極アンカ（接続電極８
ｃの直下）には、第１組の第２固定電極７の基幹が連続
しており、該基幹には可動側櫛歯の歯間スロットに進入
した、第１組の第２グル−プの櫛歯状の固定櫛歯電極が
ある。A plurality of movable comb teeth 5 distributed in the y direction in the left and right directions (x direction) at equal pitches from the floating backbone 5h.
e is protruding. One fixed electrode anchor (connection electrode 8
b), the first group of first fixed electrodes 6 is continuous with the first group, and the first group of first groups of first groups that have entered the interdental slots of the movable comb teeth 5e are connected to the first group. There is a fixed comb electrode 6b having a comb-like shape, and another fixed electrode anchor (connection electrode 8).
c), the backbone of the first set of second fixed electrodes 7 is continuous, and the backbone of the first set of the second group, which has entered the interdental slot of the movable comb tooth, is connected to the backbone. There is a comb-shaped fixed comb electrode.
【００７４】なお、第１組の固定電極６，７の、ｙ方向
に延びる基幹は、浮動基幹５ｈよりも低レベル（ｚ方
向）であり、第１組の固定櫛歯電極（６ｂ）は一端にお
いて、該基幹にｚ方向で連続してｚ方向に立上り、そし
て浮動基幹５ｈと同一レベルになっている。可動側櫛歯
５ｅと第１組の固定櫛歯電極（６ｂ）との間には微小ギ
ャップがある。The backbone extending in the y direction of the first set of fixed electrodes 6 and 7 is at a lower level (z direction) than the floating backbone 5h, and the first set of fixed comb-teeth electrodes (6b) has one end. At the same time, it rises in the z direction continuously in the z direction, and is at the same level as the floating trunk 5h. There is a small gap between the movable comb teeth 5e and the first set of fixed comb electrodes (6b).
【００７５】更にもう１つの固定電極アンカ（接続電極
８ｄの直下）には、第２組の第１固定電極１６の基幹が
連続しており、該基幹には可動側櫛歯５ｅと上述の第１
組の第１グル−プの固定櫛歯電極６ｂとの間の空間に進
入した、第２組の第１グル−プの櫛歯状の固定櫛歯電極
１６ｂがあり、更にもう１つの固定電極アンカ（接続電
極８ｅの直下）には、第２組の第２固定電極１７の基幹
が連続しており、該基幹にも、浮動基幹５ｈより突出し
た可動側櫛歯と第１組の第２固定電極７より突出した第
１組の第２グル−プの固定櫛歯電極との間の空間に進入
した、第２組の第２グル−プの櫛歯状の固定櫛歯電極が
ある。Further, a base of the second set of first fixed electrodes 16 is continuous with another fixed electrode anchor (immediately below the connection electrode 8d). 1
There is a second set of comb-shaped fixed comb electrodes 16b of the first group, which has entered the space between the fixed comb electrodes 6b of the first group of the set, and another fixed electrode. A base of the second set of second fixed electrodes 17 is continuous with the anchor (immediately below the connection electrode 8e). The base also includes a movable comb tooth protruding from the floating base 5h and a second set of second fixed electrodes 17. There is a second set of comb-shaped fixed comb electrodes of the second group, which enter the space between the first set of fixed comb electrodes of the second group protruding from the fixed electrode 7.
【００７６】なお、第２組の固定電極１６，１７の、ｙ
方向に延びる基幹は第１組のものとはｘ方向に離れてお
り、また、第１実施例の固定電極と同様に浮動基幹５ｈ
と同一レベルであり、第２組の第１および第２グル−プ
の固定櫛歯電極（１６，１７のもの）は、固定電極１
６，１７の基幹の上端部でｘ方向に突出して、第１組の
固定電極６，７の基幹との間にギャップ（絶縁用）を置
いて該基幹の上方をｘ方向に横切っている。すなわち、
固定電極６，７，１６および１７は、電気的には相互に
分離（絶縁）しており、また、浮動基幹５ｈとも電気的
には分離しており、可動側櫛歯（５ｅ），第１組の固定
櫛歯電極（６ｂ）および第２組の固定櫛歯電極（１６
ｂ）の３者間には、それぞれ微小ギャップがある。Note that y of the second set of fixed electrodes 16 and 17
The trunk extending in the direction is separated from the first set in the x direction, and the floating trunk 5h is similar to the fixed electrode of the first embodiment.
And the second set of first and second groups of fixed comb electrodes (16, 17)
The upper ends of the bases 6 and 17 protrude in the x direction, and a gap (for insulation) is provided between the bases of the first set of fixed electrodes 6 and 7 so as to cross over the bases in the x direction. That is,
The fixed electrodes 6, 7, 16, and 17 are electrically separated (insulated) from each other, and are also electrically separated from the floating backbone 5h. The set of fixed comb electrodes (6b) and the second set of fixed comb electrodes (16
There is a small gap between each of the three cases b).
【００７７】上述の、支持梁５ｉ〜５Ｌ，浮動基幹５ｈ
および固定櫛歯電極６ｂ，１６ｂは、基板１の表面から
ｚ方向で離れている。すなわち基板１の表面に、ギャッ
プを置いて対向している。これらは、浮動体アンカおよ
び固定電極アンカを、マイクロ加工技術によりシリコン
基板１の表面上に形成するときに、浮動体アンカおよび
固定電極アンカに、一体連続で形成される。The above-mentioned support beams 5i to 5L and floating backbone 5h
The fixed comb electrodes 6b and 16b are separated from the surface of the substrate 1 in the z direction. That is, it faces the surface of the substrate 1 with a gap. These are formed integrally and continuously with the floating body anchor and the fixed electrode anchor when the floating body anchor and the fixed electrode anchor are formed on the surface of the silicon substrate 1 by a micromachining technique.
【００７８】浮動体５（支持梁５ｉ〜５Ｌ，浮動基幹５
ｈ）および固定電極６，７，１６，１７の側面（基板１
のｘｙ面に対して垂直な面）すなわちｘｚ面およびｙｚ
面には導電体が接合されている。図９の（ａ）に示す１
３ｃ，１３ｄが可動側櫛歯５ｅの側面に接合された導電
体、１３ａ，１３ｂが第１組の固定櫛歯電極６ｂの側面
に接合された導電体、１３ｅおよび１３ｆが第２組の固
定櫛歯電極１６ｂに接合された導電体である。Floating body 5 (support beams 5i to 5L, floating backbone 5
h) and side surfaces of the fixed electrodes 6, 7, 16, 17 (substrate 1)
Plane perpendicular to the xy plane), ie, xz plane and yz plane
A conductor is bonded to the surface. 1 shown in FIG.
The conductors 3c and 13d are joined to the side surfaces of the movable comb teeth 5e, the conductors 13a and 13b are joined to the side surfaces of the first fixed comb electrode 6b, and the fixed combs 13e and 13f are the second set. It is a conductor bonded to the tooth electrode 16b.
【００７９】側面に導電体１３ａ〜１３ｆが接合されて
いることにより、可動側櫛歯５ｅと第１組の固定櫛歯電
極６ｂおよび第２組の固定櫛歯電極１６ｂとの間のギャ
ップ（ｙ方向）が小さくなっており、これにより可動側
櫛歯５ｅの導電体１３ｃ，１３ｄと、第１組の固定櫛歯
電極６ｂおよび第２組の固定櫛歯電極１６ｂとの静電容
量が大きい。可動側櫛歯５ｅおよび固定櫛歯電極６ｂ，
１６ｂは、フォトリソエッチングで微細に形成するが、
この製造工程上の制約から可動側櫛歯５ｅと固定櫛歯電
極６ｂ，１６ｂとのｙ方向ギャップの短くするには限度
があるが、導電体１３ａ〜１３ｆの形成によりこのギャ
ップを該限度よりも更に短くすることが可能であり、そ
の分静電容量を大きくすることができる。Since the conductors 13a to 13f are joined to the side surfaces, the gap (y) between the movable comb tooth 5e, the first set of fixed comb electrodes 6b, and the second set of fixed comb electrodes 16b is determined. Direction) is small, so that the capacitances of the conductors 13c and 13d of the movable comb teeth 5e, the first set of fixed comb electrodes 6b, and the second set of fixed comb electrodes 16b are large. The movable comb tooth 5e and the fixed comb tooth electrode 6b,
16b is finely formed by photolithographic etching,
Due to the restrictions in the manufacturing process, there is a limit in shortening the gap in the y direction between the movable comb teeth 5e and the fixed comb electrodes 6b and 16b. However, this gap is made smaller than the limit by forming the conductors 13a to 13f. The length can be further reduced, and the capacitance can be increased accordingly.
【００８０】図８に示す浮動基幹５ｈにｙ方向の加速度
が加わると、支持梁５ｉ〜５Ｌがｙ方向にはたわみ易い
ので、浮動基幹５ｈが基板１に対してｙ方向に変位す
る。これにより、第１組の固定電極６，７（の櫛歯）と
浮動基幹５ｈ（の櫛歯）との間に形成される第１の静電
容量と、第２組の固定電極１６，１７（の櫛歯）と浮動
基幹５ｈ（の櫛歯）との間に形成される第２の静電容量
の、一方が増大し他方が減少し、両者の差（の絶対値）
が増大する。第１および第２の静電容量の差を検出する
ことにより、加速度を検出することが可能である。When acceleration in the y direction is applied to the floating backbone 5h shown in FIG. 8, the supporting backbones 5i to 5L tend to bend in the y direction, so that the floating backbone 5h is displaced in the y direction with respect to the substrate 1. Thereby, the first capacitance formed between (the comb teeth of) the first set of fixed electrodes 6, 7 and (the comb teeth of) the floating base 5h, and the second set of fixed electrodes 16, 17 are formed. One of the second capacitances formed between (the comb tooth) and the floating trunk 5h (the comb tooth) increases and the other decreases, and the difference (absolute value) between the two.
Increase. The acceleration can be detected by detecting the difference between the first and second capacitances.
【００８１】上述の第７実施例の変換素子は、上述の第
１実施例の製造工程と略同様にして製造する。ただし、
上述のＡ．において絶縁層２を形成する前に、基板１の
表面又はその上に形成した絶縁層の上に第１組の固定電
極６，７の基幹となる導電層を形成しておく。そして絶
縁層２を全面に形成した後、絶縁層２に、第１組の固定
電極６，７の櫛歯電極（６ｂ）を絶縁層２直下の導電層
に接合するための開口を開けてから、全面にエッチング
層３を形成する。次の工程Ｂ．では、前記開口の部分
と、支持部４ａ〜４ｄ、固定櫛歯電極６，７を固定する
ための支持部４ｅ，４ｆ、配線及びパッド部４ｇ〜４ｉ
のＰＳＧ膜３をエッチングする。The conversion element of the seventh embodiment is manufactured in substantially the same manner as the manufacturing process of the first embodiment. However,
The above-mentioned A. Before forming the insulating layer 2, a conductive layer serving as a backbone of the first set of fixed electrodes 6 and 7 is formed on the surface of the substrate 1 or on the insulating layer formed thereon. After the insulating layer 2 is formed on the entire surface, an opening is formed in the insulating layer 2 for joining the comb-shaped electrodes (6b) of the first set of fixed electrodes 6 and 7 to the conductive layer immediately below the insulating layer 2. Then, an etching layer 3 is formed on the entire surface. Next step B. Then, the openings, the support parts 4a to 4d, the support parts 4e and 4f for fixing the fixed comb electrodes 6 and 7, the wiring and the pad parts 4g to 4i.
Is etched.
【００８２】以降の工程は、第１実施例の上述の工程
Ｃ．〜Ｇ．と同様である。これにより、櫛歯の側面に
は、図９の（ａ）に示すように導電層１３ａ〜１３ｆが
形成された、平行平板電極型の変換素子が得られる。The subsequent steps are the same as those in the above-described step C.1 of the first embodiment. ~ G. Is the same as As a result, a parallel plate electrode type conversion element in which the conductive layers 13a to 13f are formed on the side surfaces of the comb teeth as shown in FIG. 9A is obtained.
【００８３】−第８実施例− 第８実施例の平行平板電極型の変換素子は、第２実施例
の工程に上述の第７実施例の変形工程（Ａ．およびＢ．
の変形）を加えることにより、第２実施例〔図４の
（ｇ）〕と同様に、図９の（ｂ）に示すように、浮動基
幹５ｈ，梁５ｉ〜５Ｌ，固定電極６，７，１６，１７，
櫛歯，配線，電極パツド等の、基板１のｘｙ平面に対向
する面の背面（ｘｙ面）に導電体９ａ，９ｂを形成した
ものであり、櫛歯部のｙｚ断面において、導電体１３ａ
〜１３ｆ，９ａ，９ｂがコの字形となる。-Eighth Embodiment- A parallel plate electrode type conversion element according to an eighth embodiment is different from the second embodiment in that the conversion steps (A. and B.E.) of the seventh embodiment are performed.
As in the second embodiment (FIG. 4 (g)), as shown in FIG. 9 (b), the floating backbone 5h, beams 5i-5L, fixed electrodes 6, 7, and 16, 17,
Conductors 9a and 9b are formed on the back surface (xy plane) of the surface of the substrate 1 facing the xy plane, such as comb teeth, wiring, and electrode pads.
１３13f, 9a, 9b have a U-shape.
【００８４】−第９実施例− 第９実施例の平行平板電極型の変換素子は、第４実施例
の工程に上述の第７実施例の変形工程（Ａ．およびＢ．
の変形）を加えることにより、第４実施例〔図６の
（ｇ）〕と同様に、図９の（ｃ）に示すように、導電体
１３ａ〜１３ｆを、櫛歯よりも基板１側に延びる広幅
（ｚ）にしたものである。可動櫛歯の導電体１３ｃ，１
３ｄと固定櫛歯の導電体１３ａ，１３ｂ，１３ｅ，１３
ｆとの対向面積が大きく、浮動基幹５ｈのｙ方向の変位
に対して静電容量の変化が大きい。Ninth Embodiment A parallel plate electrode type conversion element according to a ninth embodiment is different from the fourth embodiment in that the conversion step (A. and B.1) of the seventh embodiment is performed.
As shown in FIG. 9C, the conductors 13a to 13f are placed closer to the substrate 1 than the comb teeth, as in the fourth embodiment (FIG. 6G). The extended width (z) is obtained. Movable comb-shaped conductor 13c, 1
3d and fixed comb-shaped conductors 13a, 13b, 13e, 13
The area facing f is large, and the capacitance changes greatly with respect to the displacement of the floating trunk 5h in the y direction.
【００８５】−第１０実施例− 第１０実施例の平行平板電極型の変換素子は、第５実施
例の工程に上述の第７実施例の変形工程（Ａ．および
Ｂ．の変形）を加えることにより、第５実施例〔図７の
（ｇ）〕と同様に、図９の（ｄ）に示すように、導電体
１３ａ〜１３ｆを、櫛歯よりも上方に延びる広幅（ｚ）
にしたものである。可動櫛歯の導電体１３ｃ，１３ｄと
固定櫛歯の導電体１３ａ，１３ｂ，１３ｅ，１３ｆとの
対向面積が大きく、浮動基幹５ｈのｙ方向の変位に対し
て静電容量の変化が大きい。Tenth Embodiment A parallel plate electrode type conversion element according to a tenth embodiment is obtained by adding the modification steps (the modifications A and B) of the seventh embodiment to the steps of the fifth embodiment. Thus, similarly to the fifth embodiment (FIG. 7 (g)), as shown in FIG. 9 (d), the conductors 13a to 13f can be extended over the wide width (z) extending above the comb teeth.
It was made. The opposing areas of the movable comb-teeth conductors 13c, 13d and the fixed comb-teeth conductors 13a, 13b, 13e, 13f are large, and the capacitance changes greatly with respect to the displacement of the floating trunk 5h in the y direction.
【００８６】−第１１実施例− 第１１実施例の平行平板電極型の変換素子は、第６実施
例の工程に上述の第７実施例の変形工程（Ａ．および
Ｂ．の変形）を加えることにより、第６実施例と同様
に、図９の（ｅ）に示すように、導電体１３ａ〜１３ｆ
を、櫛歯よりも下方および上方に延びる更に広幅（ｚ）
のものにしたものである。可動櫛歯の導電体１３ｃ，１
３ｄと固定櫛歯の導電体１３ａ，１３ｂ，１３ｅ，１３
ｆとの対向面積が更に大きく、浮動基幹５ｈのｙ方向の
変位に対して静電容量の変化が更に大きい。Eleventh Embodiment The parallel plate electrode type conversion element of the eleventh embodiment is obtained by adding the modification steps (the modifications A and B) of the seventh embodiment to the steps of the sixth embodiment. Thus, similarly to the sixth embodiment, as shown in FIG. 9E, the conductors 13a to 13f
Is wider (z) extending below and above the comb teeth
It is what was made. Movable comb-shaped conductor 13c, 1
3d and fixed comb-shaped conductors 13a, 13b, 13e, 13
The area facing f is larger, and the change in capacitance with respect to the displacement of the floating trunk 5h in the y direction is further larger.
【００８７】なお、上述の第７〜１１実施例の平行平板
電極型の変換素子は、ｙ方向の流速を検出する流速セン
サにも適用可能である。さらに、第１組および第２組の
固定電極６，７および１６，１７に、反対極性の電位を
与え、浮動体５に加える電位の極性とレベルを変化させ
ることにより浮動体５がｙ方向に駆動されるので、静電
駆動のアクチュエータとして用いることも可能である。The parallel plate electrode type conversion elements of the seventh to eleventh embodiments can be applied to a flow rate sensor for detecting a flow rate in the y direction. Furthermore, the first and second sets of fixed electrodes 6, 7 and 16, 17 are given potentials of opposite polarity, and the polarity and level of the potential applied to the floating body 5 are changed so that the floating body 5 moves in the y direction. Since it is driven, it can be used as an electrostatically driven actuator.
【図１】 本発明の第１実施例の変換素子の平面図であ
る。FIG. 1 is a plan view of a conversion element according to a first embodiment of the present invention.
【図２】 従来の変換素子ならびに第１実施例に共通
の、製造途上の素材形状を示す縮小平面図であり、
（ａ）は基板１の平面図、（ｂ）は基板１上に形成した
絶縁層２の平面図、（ｃ）は絶縁層２上に形成したマス
クパタ−ンを示す平面図、（ｄ）は基板上にフォトリソ
エッチングで形成した浮動体５および固定電極６，７を
示す平面図、（ｅ）は更に接続電極８ａ〜８ｃを形成し
た平面図である。（ｆ）はエッチング層３を除去した平
面図であり、図１の縮小図に相当する。FIG. 2 is a reduced plan view showing the shape of a material being manufactured, which is common to the conventional conversion element and the first embodiment;
(A) is a plan view of the substrate 1, (b) is a plan view of the insulating layer 2 formed on the substrate 1, (c) is a plan view showing a mask pattern formed on the insulating layer 2, (d) is FIG. 9 is a plan view showing the floating body 5 and the fixed electrodes 6 and 7 formed on the substrate by photolithographic etching, and FIG. 10E is a plan view in which connection electrodes 8a to 8c are further formed. (F) is a plan view from which the etching layer 3 has been removed, and corresponds to a reduced view of FIG. 1.
【図３】 図１の３Ａ−３Ａ線断面図に相当する、製造
途上の素材形状を示す断面図であり、断面形状が図３の
（ａ）〜（ｆ）へと順次に変わる様子を示し、（ｆ）
が、図１の３Ａ−３Ａ線断面図である。FIG. 3 is a cross-sectional view corresponding to the cross-sectional view taken along the line 3A-3A of FIG. 1, showing the shape of the raw material in the course of manufacturing, and showing how the cross-sectional shape changes sequentially from (a) to (f) of FIG. , (F)
FIG. 3 is a sectional view taken along line 3A-3A in FIG.
【図４】 第２実施例の変換素子の、図１の３Ａ−３Ａ
線断面図に対応する、製造途上の素材形状を示す断面図
であり、断面形状が図４の（ａ）〜（ｇ）へと順次に変
わる様子を示し、（ｇ）が、第２実施例の、図１の３Ａ
−３Ａ線断面対応の断面図である。FIG. 4 shows 3A-3A in FIG. 1 of the conversion element of the second embodiment.
FIG. 5 is a cross-sectional view corresponding to a line cross-sectional view showing a material shape during manufacturing, showing a state where the cross-sectional shape is sequentially changed to (a) to (g) of FIG. 4, where (g) is a second embodiment. 3A in FIG.
It is sectional drawing corresponding to -3A line | wire cross section.
【図５】 第３実施例の変換素子の、図１の３Ａ−３Ａ
線断面図に対応する、製造途上の素材形状を示す断面図
であり、断面形状が図５の（ａ）〜（ｇ）へと順次に変
わる様子を示し、（ｇ）が、第３実施例の、図１の３Ａ
−３Ａ線断面対応の断面図である。5A to 3C of the conversion element of the third embodiment; FIG.
FIG. 6 is a cross-sectional view showing a shape of a material in the process of manufacture, corresponding to a line cross-sectional view, showing a state in which the cross-sectional shape changes sequentially from FIG. 5A to FIG. 5G; 3A in FIG.
It is sectional drawing corresponding to -3A line | wire cross section.
【図６】 第４実施例の変換素子の、図１の３Ａ−３Ａ
線断面図に対応する、製造途上の素材形状を示す断面図
であり、断面形状が図６の（ａ）〜（ｇ）へと順次に変
わる様子を示し、（ｇ）が、第４実施例の、図１の３Ａ
−３Ａ線断面対応の断面図である。FIG. 6 shows 3A-3A of FIG. 1 of the conversion element of the fourth embodiment.
FIG. 7 is a cross-sectional view corresponding to a line cross-sectional view, showing a shape of a material in the course of manufacturing, showing a state in which the cross-sectional shape changes sequentially from (a) to (g) in FIG. 6, where (g) is the fourth embodiment. 3A in FIG.
It is sectional drawing corresponding to -3A line | wire cross section.
【図７】 第５実施例の変換素子の、図１の３Ａ−３Ａ
線断面図に対応する、製造途上の素材形状を示す断面図
であり、断面形状が図７の（ａ）〜（ｇ）へと順次に変
わる様子を示し、（ｇ）が、第５実施例の、図１の３Ａ
−３Ａ線断面対応の断面図である。FIG. 7 shows 3A-3A in FIG. 1 of the conversion element of the fifth embodiment.
It is sectional drawing which shows the raw material shape in the process of manufacture corresponding to a line sectional view, and shows a mode that a sectional shape changes sequentially from (a) to (g) of FIG. 7, (g) shows 5th Example. 3A in FIG.
It is sectional drawing corresponding to -3A line | wire cross section.
【図８】 本発明の第７実施例の変換素子の平面図であ
る。FIG. 8 is a plan view of a conversion element according to a seventh embodiment of the present invention.
【図９】 （ａ）は図８の９Ａ−９Ａ線断面図、（ｂ）
は第８実施例の、図８の９Ａ−９Ａ線断面対応の断面
図、（ｃ）は第９実施例の、図８の９Ａ−９Ａ線断面対
応の断面図、（ｄ）は第１０実施例の、図８の９Ａ−９
Ａ線断面対応の断面図、および、（ｅ）は第１１実施例
の、図８の９Ａ−９Ａ線断面対応の断面図である。9A is a sectional view taken along line 9A-9A in FIG. 8, FIG.
8A is a sectional view corresponding to the section taken along line 9A-9A in FIG. 8, FIG. 8C is a sectional view corresponding to the section taken along line 9A-9A in FIG. 8, and FIG. 9A-9 of FIG. 8 for an example
FIG. 10 is a sectional view corresponding to a section taken along line A, and FIG. 10E is a sectional view corresponding to a section taken along line 9A-9A in FIG. 8 of the eleventh embodiment.
１：基板 ２：絶縁層 ３：エッチング層 ４ａ〜４ｈ：支持部
等 ５：浮動体 ６，７，１６，１
７：固定電極 ５ｅ，５ｆ：可動側櫛歯 ６ｂ，７ｂ：固定櫛
歯電極 ８ａ〜８ｅ：接続電極 ９，９ａ，９ｂ：導
電体 １１：ＰＳＧ膜 １２：レジストパタ
−ン １３，１３ａ〜１３ｆ：導電体1: substrate 2: insulating layer 3: etching layer 4a to 4h: support section, etc. 5: floating body 6, 7, 16, 1
7: fixed electrode 5e, 5f: movable comb tooth 6b, 7b: fixed comb electrode 8a-8e: connection electrode 9, 9a, 9b: conductor 11: PSG film 12: resist pattern 13, 13a-13f: conductive body
Claims (19)
よびｚ方向の少くとも一方向に振動可に支持され基板の
ｘｙ平面に平行な可動薄膜、および、前記基板に固定さ
れ可動薄膜の側面に対向する面を有する固定電極、を備
える薄膜を用いた変換素子において、 前記可動薄膜の側面に接合した可動側付加電極を備える
ことを特徴とする、薄膜を用いた変換素子。1. A substrate having an xy plane, a movable thin film supported on the substrate so as to vibrate in at least one of the x, y, and z directions and parallel to the xy plane of the substrate, and a movable thin film fixed to the substrate. A conversion element using a thin film, comprising: a fixed electrode having a surface facing a side surface of the thin film; and a movable side additional electrode joined to a side surface of the movable thin film.
び該基幹より分岐してｘ方向に延び、ｙ方向にギャップ
を置いて互に平行な複数個の可動側櫛歯を有し；前記可
動側付加電極は該可動側櫛歯の側面に接合され；前記固
定電極は、ｙ方向に延びる基幹および該基幹より分岐し
てｘ方向に延びて前記ギャップに位置する複数個の固定
側櫛歯を有する；請求項１記載の、薄膜を用いた変換素
子。2. The movable thin film has a base extending in the y direction and a plurality of movable comb teeth that are branched from the base and extend in the x direction and that are parallel to each other with a gap in the y direction; The movable-side additional electrode is joined to a side surface of the movable-side comb tooth; the fixed electrode includes a base extending in the y-direction and a plurality of fixed-side comb teeth branched from the base and extending in the x-direction and positioned in the gap. The conversion element according to claim 1, wherein the conversion element comprises a thin film.
加電極に連接し、前記可動側櫛歯の、基板に対向する面
の裏側のｘｙ背面に接合した背面導体；を更に備える請
求項２記載の、薄膜を用いた変換素子。3. A back conductor which is connected to a movable side additional electrode bonded to a side surface of the movable side comb teeth and is bonded to an xy back side of the movable side comb teeth on a back side of a surface facing a substrate. Item 3. A conversion element using a thin film according to Item 2.
方向の厚みより大きいｚ方向の幅を有する、請求項１，
請求項２又は請求項３記載の、薄膜を用いた変換素子。4. The movable side additional electrode has a z of the movable thin film.
2. A z-direction width that is greater than the thickness in the direction.
The conversion element using a thin film according to claim 2 or 3.
付加電極は、導電性不純物をド−ピングしたＳi，Ｇe，
ＳixＧe1-x，ＳiＣあるいはＳixＧeyＣ1-x-y、もしく
は、金，白金，Ｖ，Ｎb，Ｔa，Ｗ，Ｍo，モリブデンシ
リサイドあるいはタングステンシリサイドの内少なくと
も１つである；請求項１，請求項２，請求項３又は請求
項４記載の、薄膜を用いた変換素子。5. The movable thin film is a semiconductor thin film; and the movable additional electrode is formed of Si, Ge, doped with conductive impurities.
3. A film according to claim 1, wherein the material is at least one of SixGe 1-x , SiC or SixGeyC 1-xy , or gold, platinum, V, Nb, Ta, W, Mo, molybdenum silicide or tungsten silicide. The conversion element using a thin film according to claim 3 or 4.
エッチング層より上層に半導体薄膜を形成する工程，該
半導体薄膜を、フォトリソエッチングにより第１の櫛歯
を有する浮動体と第１の櫛歯にかみ合うように配された
第２の櫛歯を有する固定体に加工する工程、および、前
記エッチング層の少なくとも一部を除去して浮動体を基
板に対して可動にする工程、を含む半導体薄膜を用いた
変換素子の製造方法において、 上記半導体薄膜を櫛歯状に加工後、第１および第２の櫛
歯の少なくとも相対向面に導電体を形成することを特徴
とする、半導体薄膜を用いた変換素子の製造方法。6. A step of forming an etching layer on a substrate, a step of forming a semiconductor thin film above the etching layer, and a step of forming a floating body having first comb teeth and a first comb by photolithographic etching. A semiconductor comprising a step of processing into a fixed body having second comb teeth arranged so as to mesh with the teeth, and a step of removing at least a part of the etching layer to make the floating body movable with respect to the substrate In a method for manufacturing a conversion element using a thin film, the semiconductor thin film is processed into a comb shape, and then a conductor is formed on at least opposing surfaces of the first and second comb teeth. Manufacturing method of the conversion element used.
ッチング層より上層に半導体薄膜を形成する工程，該半
導体薄膜を、フォトリソエッチングにより前記基板に対
して実質上直交する面を有する第１の電極を有する浮動
体と第１の電極と対になって平行平板電極を構成するよ
うに配された第２の電極を有する固定体に加工する工
程、および、前記エッチング層の少なくとも一部を除去
して浮動体を基板に対して可動にする工程、を含む半導
体薄膜を用いた変換素子の製造方法において、 上記半導体薄膜のフォトリソエッチング後、第１および
第２の電極の少なくとも相対向面上に導電体を形成する
ことを特徴とする、半導体薄膜を用いた変換素子の製造
方法。7. A step of forming an etching layer on a substrate, a step of forming a semiconductor thin film above the etching layer, and forming the semiconductor thin film on a first surface having a surface substantially orthogonal to the substrate by photolithographic etching. Processing a floating body having an electrode and a fixed body having a second electrode arranged to form a parallel plate electrode in pairs with the first electrode, and removing at least a part of the etching layer Making the floating body movable with respect to the substrate by using the semiconductor thin film. After the photolithographic etching of the semiconductor thin film, at least on the opposing surfaces of the first and second electrodes A method for manufacturing a conversion element using a semiconductor thin film, comprising forming a conductor.
により、第１および第２の電極の少なくとも相対向面上
に導電体を形成する、請求項６又は請求項７記載の、半
導体薄膜を用いた変換素子の製造方法。8. The semiconductor thin film according to claim 6, wherein a conductor is formed on at least opposing surfaces of the first and second electrodes by selectively growing the conductor on the semiconductor thin film. Manufacturing method of the conversion element.
ングされたＳi，ＧeまたはＳixＧe1-x、もしくは、Ｗ又
はＭoである請求項８記載の、半導体薄膜を用いた変換
素子の製造方法。9. The fabrication of a conversion element using a semiconductor thin film according to claim 8, wherein the conductor is Si, Ge or SixGe 1-x doped with the same conductivity as the electrode, or W or Mo. Method.
る、請求項６又は請求項７記載の、半導体薄膜を用いた
変換素子の製造方法。10. The method for manufacturing a conversion element using a semiconductor thin film according to claim 6, wherein said conductor is formed by electroplating.
方的に形成しそして異方性エッチングにより第１および
第２の電極の少なくとも相対向面上には前記導電性薄膜
を残し他は除去して前記導電体を形成する、請求項６又
は請求項７記載の、半導体薄膜を用いた変換素子の製造
方法。11. A conductive thin film is isotropically formed on said semiconductor thin film, and said conductive thin film is left on at least opposing surfaces of said first and second electrodes by anisotropic etching. The method for manufacturing a conversion element using a semiconductor thin film according to claim 6 or 7, wherein the conductor is formed by removing the conductor.
ピングしたＳi，Ｇe，ＳixＧe1-x，ＳiＣあるいはＳix
ＧeyＣ1-x-y、もしくは、金，白金，Ｖ，Ｎb，Ｔa，
Ｗ，Ｍo，モリブデンシリサイドあるいはタングステン
シリサイドの内少なくとも１つである；請求項１１記載
の半導体薄膜を用いた変換素子の製造方法。12. The conductive thin film according to claim 1, wherein the conductive impurity is doped.
Pinged Si, Ge, SixGe 1-x , SiC or Six
GeyC 1-xy or gold, platinum, V, Nb, Ta,
The method for manufacturing a conversion element using a semiconductor thin film according to claim 11, wherein the conversion element is at least one of W, Mo, molybdenum silicide, and tungsten silicide.
法，熱ＣＶＤ法，スパッタ法およびめっき法の少なくと
も一つを用いる；請求項１１記載の半導体薄膜を用いた
変換素子の製造方法。13. A plasma CVD method for forming the conductive thin film.
12. The method for manufacturing a conversion element using a semiconductor thin film according to claim 11, wherein at least one of a method, a thermal CVD method, a sputtering method, and a plating method is used.
グ，ＥＣＲプラズマエッチング，ＲＩＥおよび他のプラ
ズマを用いたエッチングの１つである；請求項１１記載
の半導体薄膜を用いた変換素子の製造方法。14. The method for manufacturing a conversion element using a semiconductor thin film according to claim 11, wherein the anisotropic etching is one of ion milling, ECR plasma etching, RIE and etching using another plasma.
り下層に形成された薄膜の一部を少なくとも電極領域の
半導体薄膜と同一の形状にエッチングする；請求項１１
記載の半導体薄膜を用いた変換素子の製造方法。15. The method according to claim 11, wherein a portion of the thin film formed below the semiconductor thin film is etched into at least the same shape as the semiconductor thin film in the electrode region before forming the conductive thin film.
A method for manufacturing a conversion element using the semiconductor thin film described in the above.
膜より下層に形成された薄膜のエッチングは、半導体薄
膜のエッチングと同一のマスク、又はエッチング後の半
導体薄膜、をマスクにする；請求項１５記載の半導体薄
膜を用いた変換素子の製造方法。16. The etching of the thin film formed below the semiconductor thin film in the electrode region of the semiconductor thin film uses the same mask as the etching of the semiconductor thin film or the semiconductor thin film after the etching; A method for manufacturing a conversion element using a semiconductor thin film.
導体薄膜の電極領域上部に半導体薄膜と同一の形状の薄
膜を形成する；請求項１１記載の半導体薄膜を用いた変
換素子の製造方法。17. The method for manufacturing a conversion element using a semiconductor thin film according to claim 11, wherein a thin film having the same shape as the semiconductor thin film is formed at least above the electrode region of the semiconductor thin film before forming the conductive thin film.
スクは、電極領域上部に形成した薄膜をエッチングする
際のマスク、又はエッチング後の上記薄膜である；請求
項１７記載の半導体薄膜を用いた変換素子の製造方法。18. A conversion element using a semiconductor thin film according to claim 17, wherein the mask for etching the semiconductor thin film is a mask for etching a thin film formed on an electrode region or the thin film after etching. Production method.
ある；請求項１７又は請求項１８記載の半導体薄膜を用
いた変換素子の製造方法。19. The method according to claim 17, wherein the thin film is made of the same material as the etching layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12198997A JPH10313123A (en) | 1997-05-13 | 1997-05-13 | Transducer using thin film and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12198997A JPH10313123A (en) | 1997-05-13 | 1997-05-13 | Transducer using thin film and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10313123A true JPH10313123A (en) | 1998-11-24 |
Family
ID=14824817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12198997A Withdrawn JPH10313123A (en) | 1997-05-13 | 1997-05-13 | Transducer using thin film and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10313123A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003018868A (en) * | 2001-07-02 | 2003-01-17 | Fujitsu Ltd | Electrostatic actuator and its manufacturing method |
| WO2003025958A3 (en) * | 2001-09-17 | 2003-09-18 | Infineon Technologies Ag | Device for mechanically regulating an electrical capacitance, and method for making same |
| JP2005045976A (en) * | 2003-07-25 | 2005-02-17 | Matsushita Electric Works Ltd | Electrostatic actuator |
| JP2006005731A (en) * | 2004-06-18 | 2006-01-05 | Seiko Epson Corp | Micro mechanical electrostatic vibrator |
| JP2008164625A (en) * | 2008-02-05 | 2008-07-17 | Denso Corp | Semiconductor dynamic quantity sensor |
| JP2008309718A (en) * | 2007-06-15 | 2008-12-25 | Toyota Motor Corp | Mechanical quantity detection sensor, acceleration sensor, and yaw rate sensor as well as production method of mechanical quantity detection sensor |
-
1997
- 1997-05-13 JP JP12198997A patent/JPH10313123A/en not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003018868A (en) * | 2001-07-02 | 2003-01-17 | Fujitsu Ltd | Electrostatic actuator and its manufacturing method |
| JP4722333B2 (en) * | 2001-07-02 | 2011-07-13 | 富士通株式会社 | Electrostatic actuator and manufacturing method thereof |
| WO2003025958A3 (en) * | 2001-09-17 | 2003-09-18 | Infineon Technologies Ag | Device for mechanically regulating an electrical capacitance, and method for making same |
| JP2005045976A (en) * | 2003-07-25 | 2005-02-17 | Matsushita Electric Works Ltd | Electrostatic actuator |
| JP2006005731A (en) * | 2004-06-18 | 2006-01-05 | Seiko Epson Corp | Micro mechanical electrostatic vibrator |
| JP4576898B2 (en) * | 2004-06-18 | 2010-11-10 | セイコーエプソン株式会社 | Micromechanical electrostatic vibrator |
| JP2008309718A (en) * | 2007-06-15 | 2008-12-25 | Toyota Motor Corp | Mechanical quantity detection sensor, acceleration sensor, and yaw rate sensor as well as production method of mechanical quantity detection sensor |
| JP2008164625A (en) * | 2008-02-05 | 2008-07-17 | Denso Corp | Semiconductor dynamic quantity sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6227050B1 (en) | Semiconductor mechanical sensor and method of manufacture | |
| US5611940A (en) | Microsystem with integrated circuit and micromechanical component, and production process | |
| USRE40561E1 (en) | Acceleration sensor and process for the production thereof | |
| EP0102069B1 (en) | Vibration analyzing device | |
| JP4003326B2 (en) | Semiconductor dynamic quantity sensor and manufacturing method thereof | |
| US6888662B2 (en) | Micro-mechanical system employing electrostatic actuator and fabrication methods of same | |
| EP0907076B1 (en) | Method of fabricating integrated, aligned tunneling tip pairs | |
| JP3412293B2 (en) | Semiconductor yaw rate sensor and method of manufacturing the same | |
| JP4665942B2 (en) | Semiconductor dynamic quantity sensor | |
| US7062970B2 (en) | Electrostatic vibration device | |
| US7631558B2 (en) | Microsystem, more particularly microgyrometer, with capacitive electrode detection element | |
| JPH0870130A (en) | Micromechanism device,microsystem and its preparation | |
| JP2004513506A (en) | Vertical movable gate transistor and method of manufacturing the same | |
| JP4117450B2 (en) | Manufacturing method of semiconductor device | |
| JPH10313123A (en) | Transducer using thin film and manufacture thereof | |
| JPH10335675A (en) | Semiconductor micromachine | |
| JP3292286B2 (en) | Vibration transducer and manufacturing method thereof | |
| WO2006120886A1 (en) | Semiconductor device having elemental device part and method for manufacturing same | |
| JP4403607B2 (en) | Semiconductor dynamic quantity sensor | |
| JPH0850022A (en) | Angular velocity sensor | |
| JP3355812B2 (en) | Semiconductor yaw rate sensor | |
| JPH11118826A (en) | Micromachine sensor | |
| JP3633555B2 (en) | Semiconductor dynamic quantity sensor | |
| JP2000031503A (en) | Sensor structure and method of mutually connecting separated structures | |
| JPH10190008A (en) | Semiconductor micromachine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040428 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20060901 |