JPH10294495A - Electronic component - Google Patents
Electronic componentInfo
- Publication number
- JPH10294495A JPH10294495A JP9100438A JP10043897A JPH10294495A JP H10294495 A JPH10294495 A JP H10294495A JP 9100438 A JP9100438 A JP 9100438A JP 10043897 A JP10043897 A JP 10043897A JP H10294495 A JPH10294495 A JP H10294495A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electronic component
- insulator
- side wall
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、絶縁体上に距離を
置いて第１の電極および第２の電極が対向設置されてい
る電子部品に係り、特に各種表示装置の光源として使用
される表面実装型発光装置としての発光素子に適用さ
れ、部品の信頼性の向上を図るための構造に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component in which a first electrode and a second electrode are opposed to each other at a distance on an insulator, and more particularly to a surface used as a light source of various display devices. The present invention relates to a structure applied to a light emitting element as a mounting type light emitting device and for improving the reliability of components.
【０００２】[0002]
【従来の技術】発光素子である発光ダイオード(ＬＥＤ)
は、動作電圧が低く、かつ応答速度が速く、しかも動作
寿命が長いなどの利点があるため、各種表示装置の光源
として使用されている。2. Description of the Related Art Light emitting diodes (LEDs) as light emitting elements
Are used as light sources for various display devices because of their advantages such as low operating voltage, fast response speed, and long operating life.
【０００３】特に、近年では、電気機器の小型化の要求
に応じるため表面実装用のチップ型発光表示装置が使用
されている。ＬＥＤを用い、かつ反射ケースを有する表
面実装用のチップ型発光表示装置(以下、チップＬＥＤ
という)の従来例の構成を図面を参照して説明する。In particular, in recent years, chip-type light emitting display devices for surface mounting have been used in order to meet the demand for miniaturization of electric equipment. A chip-type light-emitting display device for surface mounting using an LED and having a reflective case (hereinafter referred to as a chip LED)
) Will be described with reference to the drawings.
【０００４】図４に反射ケースを有するチップＬＥＤの
従来例を示す。図４(a)はチップＬＥＤの平面図、図４
(b)は図４(a)のチップＬＥＤの断面図であり、箱状の反
射ケース１に対してリードフレームからなる一対の電極
２，３がインサート成形によって設けられている。一方
の電極３の上部はＬＥＤ５を実装するパット部3aであ
り、このパット部3aに塗布された導電性樹脂である銀ペ
ースト４を熱硬化させることによってＬＥＤ５が電極３
と電気的および機械的に接続されている。他方の電極２
の上部は、ＬＥＤ５と金属ワイヤ６にて電気的に接続さ
れるボンディングパット2aとなっている。FIG. 4 shows a conventional example of a chip LED having a reflection case. FIG. 4A is a plan view of the chip LED, and FIG.
FIG. 4B is a cross-sectional view of the chip LED of FIG. 4A, in which a pair of electrodes 2 and 3 formed of a lead frame are provided on a box-shaped reflection case 1 by insert molding. An upper portion of one electrode 3 is a pad portion 3a on which the LED 5 is mounted, and the silver paste 4 which is a conductive resin applied to the pad portion 3a is thermally cured, so that the LED 5
And electrically and mechanically connected. The other electrode 2
The upper part is a bonding pad 2a electrically connected to the LED 5 and the metal wire 6.
【０００５】反射ケース１は、ＬＥＤ５からの光の取り
出し効率を向上させるために白色の高耐熱樹脂によって
成形されている。さらにＬＥＤ５と金属ワイヤ６の保護
と、光の取り出し効率向上のために、透光性の樹脂を反
射ケース１の開口部に充填した後、硬化させて樹脂封止
部７を形成することによってチップＬＥＤが構成され
る。[0005] The reflection case 1 is formed of a white high heat-resistant resin in order to improve the light extraction efficiency from the LED 5. Further, in order to protect the LED 5 and the metal wire 6 and to improve the light extraction efficiency, a transparent resin is filled into the opening of the reflection case 1 and then cured to form the resin sealing portion 7. An LED is configured.
【０００６】なお、図中の2b，3bは、電極２，３のパッ
ド部2a，3aと一体に成形された外部端子電極である。Reference numerals 2b and 3b in the figure denote external terminal electrodes integrally formed with the pads 2a and 3a of the electrodes 2 and 3, respectively.
【０００７】以上のような構成のチップＬＥＤがプリン
ト基板に実装され、外部端子電極2b，3b間に電流を流す
ことにより、各種表示装置の光源として利用される。[0007] The chip LED having the above configuration is mounted on a printed circuit board, and is used as a light source for various display devices by flowing a current between the external terminal electrodes 2b and 3b.
【０００８】次に、図５に反射ケースを有するチップＬ
ＥＤの他の従来例を示す。図５(a)はチップＬＥＤの平
面図、図５(b)は図５(a)のチップＬＥＤの断面図であ
る。Next, FIG. 5 shows a chip L having a reflection case.
This shows another conventional example of the ED. FIG. 5A is a plan view of the chip LED, and FIG. 5B is a cross-sectional view of the chip LED of FIG.
【０００９】この例では、樹脂を含有する基板８上に一
対の電極９，10が配設されている。一方の電極10の電極
パット部10aに塗布された銀ペースト４を熱硬化させる
ことによってＬＥＤ５が電極10と電気的および機械的に
接続されている。他方の電極９の上部は、ＬＥＤ５と金
属ワイヤ６にて電気的に接続されるボンディングパット
9aとなっている。In this example, a pair of electrodes 9 and 10 are provided on a substrate 8 containing a resin. The LED 5 is electrically and mechanically connected to the electrode 10 by thermally curing the silver paste 4 applied to the electrode pad portion 10a of one electrode 10. The upper part of the other electrode 9 is a bonding pad electrically connected to the LED 5 and the metal wire 6.
9a.
【００１０】ＬＥＤ５からの光の取り出し効率向上のた
めに、ＬＥＤ５に対応する開口部を有する箱状の反射ケ
ース１が図示しない接着剤により基板８に固着されてい
る。そして、透光性の樹脂を反射ケース１の開口部に充
填した後、硬化させて樹脂封止部７を形成することによ
ってチップＬＥＤが構成される。In order to improve the efficiency of extracting light from the LED 5, a box-shaped reflection case 1 having an opening corresponding to the LED 5 is fixed to a substrate 8 with an adhesive (not shown). Then, a chip LED is formed by filling the opening of the reflective case 1 with a translucent resin and then curing the resin to form the resin sealing portion 7.
【００１１】なお、図中の9b，10bは、電極９，10のパ
ッド部9a，10aと一体に成形された外部端子電極であ
る。Reference numerals 9b and 10b in the figure denote external terminal electrodes integrally formed with the pads 9a and 10a of the electrodes 9 and 10, respectively.
【００１２】[0012]
【発明が解決しようとする課題】しかし、このような従
来の反射ケース１を有するチップＬＥＤの構造におい
て、反射ケース１における開口部が小さい場合にはブリ
ーディングが発生するという問題があった。図６は図４
に示した従来例における銀ペーストブリーディング状態
を示し、また図７は図５に示した従来例における銀ペー
ストブリーディング状態を示している。なお、図中の11
にて示す部分が銀ペーストブリーディング部である。However, in the structure of such a conventional chip LED having the reflective case 1, there is a problem that bleeding occurs when the opening in the reflective case 1 is small. FIG. 6 shows FIG.
7 shows a silver paste bleeding state in the conventional example shown in FIG. 7, and FIG. 7 shows a silver paste bleeding state in the conventional example shown in FIG. Note that 11 in the figure
The portion indicated by is the silver paste bleeding portion.
【００１３】図６，図７のように、ＬＥＤ５と電極３，
10とを接続するための銀ペースト４が反射ケース１の開
口部側面1bに付着し、その結果、反射ケース１の開口部
底面1aあるいは基板８の上面と、開口部側面1bとの境界
線Ｌに沿って銀ペースト４がブリーディング(境界線に
沿って銀ペーストが毛管現象により移行すること)し、
最終的に一対の電極２，３あるいは電極９，10間で電気
的ショート現象を発生させてしまう。As shown in FIGS. 6 and 7, the LED 5 and the electrode 3,
The silver paste 4 for connection with the reflective case 1 adheres to the opening side surface 1b of the reflection case 1, and as a result, the boundary line L between the opening bottom surface 1a of the reflection case 1 or the upper surface of the substrate 8 and the opening side surface 1b. The silver paste 4 bleeds along (the silver paste moves along the boundary line by capillary action),
Eventually, an electrical short phenomenon occurs between the pair of electrodes 2 and 3 or the electrodes 9 and 10.
【００１４】本発明は、前記のような従来の問題を解決
するためになされたものであり、一対の電極が配設され
るチップＬＥＤなどの電子部品において、その一方の電
極と電子素子とを接続する導電性材のブリーディングを
防止することにより、電極間ショートの問題を解決し、
信頼性の高い電子部品を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems. In an electronic component such as a chip LED in which a pair of electrodes is disposed, one of the electrodes is connected to an electronic element. By preventing bleeding of the conductive material to be connected, the problem of short circuit between electrodes is solved,
An object is to provide a highly reliable electronic component.
【００１５】[0015]
【課題を解決するための手段】本発明に係る電子部品
は、絶縁体上に距離を置いて対向設置された第１の電極
および第２の電極と、前記第１の電極上に導電性材を介
して載置された電子素子と、前記絶縁体上に前記電子素
子の側方から前記第１の電極および第２の電極の対向方
向に渡って設けられた側壁とを備え、前記第１の電極と
第２の電極との対向間隔部分に、前記導電性材のブリー
ディングを止める部分を形成したものである。An electronic component according to the present invention comprises a first electrode and a second electrode which are opposed to each other at a distance on an insulator, and a conductive material is provided on the first electrode. An electronic element mounted on the insulator, and a side wall provided on the insulator from a side of the electronic element in a direction facing the first electrode and the second electrode; A portion for stopping the bleeding of the conductive material is formed at a space between the electrode and the second electrode facing each other.
【００１６】[0016]
【発明の実施の形態】本発明の請求項１に記載の発明
は、絶縁体上に距離を置いて対向設置された第１の電極
および第２の電極と、前記第１の電極上に導電性材を介
して載置された電子素子と、前記絶縁体上に前記電子素
子の側方から前記第１の電極および第２の電極の対向方
向に渡って設けられた側壁とを備え、前記第１の電極と
第２の電極との対向間隔部分における少なくとも前記絶
縁体と前記側壁との境界部分に凹部または凸部を設けた
ものであり、この構成により、導電性材のブリーディン
グを凹部または凸部によって止めることができ、ブリー
ディングによる第１の電極と第２の電極間のショートを
防止することができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the first aspect of the present invention, a first electrode and a second electrode which are opposed to each other at a distance on an insulator, and a conductive material is provided on the first electrode An electronic element mounted via a conductive material, and a side wall provided on the insulator from a side of the electronic element in a direction facing the first electrode and the second electrode, A concave portion or a convex portion is provided at least at a boundary portion between the insulator and the side wall at a portion where the first electrode and the second electrode are opposed to each other. With this configuration, the bleeding of the conductive material is performed by the concave portion or the convex portion. The first electrode and the second electrode can be prevented from being short-circuited due to bleeding.
【００１７】前記請求項１に記載の発明は、請求項２に
記載の発明のように、電子素子の上部と第２の電極とを
細線によって電気的に接続した構成にも適用することが
できる。The invention described in claim 1 can also be applied to a configuration in which the upper portion of the electronic element and the second electrode are electrically connected by a thin wire as in the invention described in claim 2. .
【００１８】前記請求項１に記載の発明は、請求項３に
記載の発明のように、側壁を電子素子の少なくとも両側
方に設けた構成にも適用することができる。The invention described in claim 1 can also be applied to a configuration in which side walls are provided at least on both sides of an electronic element as in the invention described in claim 3.
【００１９】前記請求項１に記載の発明は、請求項４に
記載の発明のように、電子素子が発光素子であり、側壁
が光反射部である構成にも適用することができる。The first aspect of the present invention can be applied to a configuration in which the electronic element is a light emitting element and the side wall is a light reflecting portion, as in the fourth aspect of the present invention.
【００２０】前記請求項１に記載の発明は、請求項５に
記載の発明のように、リードフレームを用いて樹脂封止
によって、側壁と絶縁体と第１の電極および第２の電極
とを一体的に設置した構成にも適用することができる。According to the first aspect of the present invention, as in the fifth aspect of the present invention, the side wall, the insulator, the first electrode and the second electrode are sealed by resin using a lead frame. The present invention can also be applied to an integrally installed configuration.
【００２１】前記請求項１に記載の発明は、請求項６に
記載の発明のように、第１の電極と第２の電極との上部
もしくは下部を略同一高さに設けた構成にも適用するこ
とができる。The invention described in claim 1 is also applicable to a configuration in which the upper and lower portions of the first electrode and the second electrode are provided at substantially the same height as in the invention described in claim 6. can do.
【００２２】前記請求項１に記載の発明は、請求項７に
記載の発明のように、側壁を第１の電極と第２の電極の
上にも設けた構成にも適用することができる。The invention described in claim 1 can also be applied to a configuration in which the side wall is provided on the first electrode and the second electrode as in the invention described in claim 7.
【００２３】前記請求項１に記載の発明は、請求項８に
記載の発明のように、両側壁間で形成される略長方形状
の開口部底面における絶縁体の長手方向に第１の電極と
第２の電極とを対向設置し、第１の電極と第２の電極と
の対向間隔を第１の電極の長辺の長さ以下にした構成に
も適用することができる。According to the first aspect of the present invention, as in the eighth aspect of the present invention, the first electrode and the first electrode extend in the longitudinal direction of the insulator at the bottom surface of the substantially rectangular opening formed between both side walls. The present invention can also be applied to a configuration in which the second electrode is opposed to the first electrode and the distance between the first electrode and the second electrode is less than the length of the long side of the first electrode.
【００２４】前記請求項１に記載の発明は、請求項９に
記載の発明のように、両側壁の下部または近傍まで第１
の電極と第２の電極を延在させた構成にも適用すること
ができる。According to the first aspect of the present invention, as in the ninth aspect, the first portion extends to the lower portion or the vicinity of the both side walls.
It can be applied to a configuration in which the first electrode and the second electrode are extended.
【００２５】また請求項10に記載の発明は、絶縁体上に
距離を置いて対向設置された第１の電極および第２の電
極と、前記第１の電極上に導電性材を介して載置された
電子素子と、前記絶縁体上に前記電子素子の側方から前
記第１の電極および第２の電極の対向方向に渡って設け
られた側壁とを備え、前記第１の電極と第２の電極との
対向間隔部分における前記絶縁体上に前記側壁まで前記
第１の電極上面よりも突出させて絶縁突起部を設けたも
のであり、この構成により、導電性材のブリーディング
を絶縁突起部によって止めることができ、ブリーディン
グによる第１の電極と第２の電極間のショートを防止す
ることができる。According to a tenth aspect of the present invention, the first electrode and the second electrode opposed to each other at a distance on an insulator are mounted on the first electrode via a conductive material. An electronic element disposed thereon, and a side wall provided on the insulator from a side of the electronic element in a direction opposite to the first electrode and the second electrode. An insulating protrusion protruding from the upper surface of the first electrode up to the side wall on the insulator at an interval between the second electrode and the second electrode. With this configuration, bleeding of the conductive material is prevented. The short circuit between the first electrode and the second electrode due to bleeding can be prevented.
【００２６】前記請求項10に記載の発明は、請求項11に
記載の発明のように、電子素子の上部と第２の電極とを
細線によって電気的に接続した構成にも適用することが
できる。The invention described in claim 10 can also be applied to a configuration in which the upper part of the electronic element and the second electrode are electrically connected to each other by a thin wire as in the invention described in claim 11. .
【００２７】前記請求項10に記載の発明は、請求項12に
記載の発明のように、細線下方の絶縁突起部に凹部を形
成した構成にも適用することができる。The invention described in claim 10 can also be applied to a configuration in which a concave portion is formed in an insulating projection below a thin wire as in the invention described in claim 12.
【００２８】前記請求項10に記載の発明は、請求項13に
記載の発明のように、電子素子が発光素子であり、側壁
間で形成される略長方形状の開口部底面における絶縁体
の長手方向に第１の電極と第２の電極とを対向設置し、
絶縁突起部が発光素子の発光活性層よりも低い領域を有
し、側壁が発光活性層よりも高い領域を有するようにし
た構成にも適用することができる。According to a tenth aspect of the present invention, as in the thirteenth aspect, the electronic element is a light emitting element, and the length of the insulator at the bottom surface of the substantially rectangular opening formed between the side walls. The first electrode and the second electrode are installed facing each other in the direction,
The present invention can also be applied to a configuration in which the insulating protrusion has a region lower than the light emitting active layer of the light emitting element and the side wall has a region higher than the light emitting active layer.
【００２９】以下、本発明の実施の形態について図面を
参照して説明する。なお、図４〜図７を参照して説明し
た部材に対応する部材には同一符号を付して詳しい説明
は省略する。Hereinafter, embodiments of the present invention will be described with reference to the drawings. Members corresponding to the members described with reference to FIGS. 4 to 7 are denoted by the same reference numerals, and detailed description is omitted.
【００３０】図１は本発明の第１実施形態を説明するた
めのチップＬＥＤの構成を示す図であって、図１(a)は
チップＬＥＤの平面図、図１(b)は図１(a)におけるＡ−
Ａ線断面図、図１(c)は図１(a)におけるＢ−Ｂ線断面図
である。FIG. 1 is a view showing a configuration of a chip LED for explaining a first embodiment of the present invention. FIG. 1 (a) is a plan view of the chip LED, and FIG. A- in a)
1A is a cross-sectional view taken along a line BB in FIG. 1A.
【００３１】図１に示すように、上方が開口して周囲に
側壁1cが形成された箱状をなす絶縁性樹脂製の反射ケー
ス１に、リードフレームで形成された一対の電極２，３
がインサート成形によって設けられており、電極２，３
の上部は、周部上に反射ケース１の側壁1cが位置し、か
つ反射ケース１における開口部底面1aに側端が互いに間
隔をおいて、かつ同じ高さで対向配設されており、その
対向間隔Ｓ部分における反射ケース１の側壁1cの内側、
すなわち開口部底面1aと開口部側面1bの境界線Ｌ部分
に、反射ケース１と一体に突起部12が形成されている。As shown in FIG. 1, a pair of electrodes 2 and 3 formed of a lead frame are placed on a box-shaped reflective case 1 made of an insulating resin having an upper opening and a side wall 1c formed therearound.
Are provided by insert molding, and electrodes 2 and 3 are provided.
In the upper part of the case, the side wall 1c of the reflection case 1 is located on the peripheral portion, and the side ends are spaced apart from each other at the opening bottom surface 1a of the reflection case 1 and are opposed to each other at the same height. Inside the side wall 1c of the reflection case 1 at the opposing interval S,
That is, the projection 12 is formed integrally with the reflection case 1 at the boundary L between the opening bottom surface 1a and the opening side surface 1b.
【００３２】一方の電極３の上部は電子素子としてのＬ
ＥＤ５を実装するパット部3aであり、このパット部3aに
塗布された導電性材としての銀ペースト４を熱硬化させ
ることによってＬＥＤ５が電極３と電気的および機械的
に接続されている。他方の電極２の上部は、ＬＥＤ５と
金属ワイヤ(細線)６にて電気的に接続されるボンディン
グパット部2aとなっている。パッド部2a，3aは、その長
辺が反射ケース１における略長方形状の開口部底面1aの
長手方向において対向するようにそれぞれ配置され、し
かも対向間隔Ｓが前記長辺の長さ以下であるように設定
されている。The upper part of one electrode 3 has L as an electronic element.
The pad portion 3a on which the ED 5 is mounted. The LED 5 is electrically and mechanically connected to the electrode 3 by thermally curing a silver paste 4 as a conductive material applied to the pad portion 3a. The upper portion of the other electrode 2 is a bonding pad portion 2a that is electrically connected to the LED 5 by a metal wire (thin wire) 6. The pad portions 2a and 3a are arranged so that their long sides are opposed to each other in the longitudinal direction of the substantially rectangular opening bottom surface 1a in the reflective case 1, and the facing distance S is smaller than the length of the long side. Is set to
【００３３】なお、図中の2b，3bは、下部が反射ケース
１の下外壁部に同じ高さに設置されるように、電極２，
３のパッド部2a，3aと一体に成形された外部端子電極で
ある。The electrodes 2b and 3b in the figure have electrodes 2 and 3 so that the lower portion is installed at the same height on the lower outer wall of the reflection case 1.
The external terminal electrodes are integrally formed with the pad portions 2a and 3a.
【００３４】突起部12を設けたことによって、銀ペース
ト４が反射ケース１の開口部側面1bに付着し、開口部底
面1aと開口部側面1bとの境界線Ｌに沿って銀ペースト４
のブリーディング部11が発生しても、突起部12によって
ブリーディング部11を止めて、他方の電極２にブリーデ
ィング部11が到達することを防止することができる。By providing the projections 12, the silver paste 4 adheres to the side surface 1b of the opening of the reflection case 1, and the silver paste 4 extends along the boundary line L between the bottom surface 1a of the opening and the side surface 1b of the opening.
Even if the bleeding portion 11 is generated, the bleeding portion 11 can be stopped by the protrusion 12 and the bleeding portion 11 can be prevented from reaching the other electrode 2.
【００３５】反射ケース１は、ＬＥＤ５からの光の取り
出し効率を向上させるために白色の高耐熱樹脂で成形さ
れている。The reflection case 1 is formed of a white high heat-resistant resin in order to improve the light extraction efficiency from the LED 5.
【００３６】また突起部12は、図１(c)に示すように、
反射ケース１の開口部底面1aと開口部側面1bの境界線Ｌ
部分に、ＬＥＤ５における光学的影響を少なくするため
に外側から内側に向けて徐々に低くなるように形成して
ある。Further, as shown in FIG.
Boundary line L between opening bottom surface 1a and opening side surface 1b of reflection case 1
The portion is formed so as to gradually decrease from the outside to the inside in order to reduce the optical influence on the LED 5.
【００３７】さらに、ＬＥＤ５と金属ワイヤ６の保護と
光の取り出し効率向上のために、透光性の樹脂を反射ケ
ース１の開口部に充填した後、硬化させて樹脂封止部
(図示せず)が形成され、チップＬＥＤが構成される。Further, in order to protect the LED 5 and the metal wire 6 and improve the light extraction efficiency, a transparent resin is filled in the opening of the reflection case 1 and then cured to form a resin sealing portion.
(Not shown) are formed to constitute a chip LED.
【００３８】なお、前記一対の電極２，３の反射ケース
１に対する設置は前記構成に限定されず、反射ケース１
の側壁1cの下部または近傍まで一対の電極の少なくとも
いずれか一方が延在する構成や、前記一対の電極２，３
がリードフレームではなく、絶縁性基板上に形成された
金属膜からなる一対の電極を備えた電子部品であって
も、前記と同様な構成を採用することによって前記のよ
うな効果を得ることができる。The arrangement of the pair of electrodes 2 and 3 with respect to the reflection case 1 is not limited to the above-described configuration.
A configuration in which at least one of the pair of electrodes extends to the lower portion or the vicinity of the side wall 1c of the
Is not a lead frame, but an electronic component having a pair of electrodes formed of a metal film formed on an insulating substrate, the above-described effects can be obtained by adopting the same configuration as above. it can.
【００３９】図２は本発明の第２実施形態を説明するた
めのチップＬＥＤの構成を示す図であって、図２(a)は
チップＬＥＤの平面図、図２(b)は図２(a)のチップＬＥ
Ｄの断面図である。FIG. 2 is a view showing the configuration of a chip LED for explaining a second embodiment of the present invention. FIG. 2 (a) is a plan view of the chip LED, and FIG. a) Chip LE
It is sectional drawing of D.
【００４０】図２に示すように、第２実施形態は、第１
実施形態のチップＬＥＤと同様に形成された反射ケース
１内における電極２，３の対向間隔Ｓ部分であって、か
つ反射ケース１の側壁1cの内側、すなわち開口部底面1a
と開口部側面1bの境界線Ｌ部分に、切り欠き部13を設け
た点が第１実施形態と相違している。As shown in FIG. 2, the second embodiment is a first embodiment.
This is a portion S between the electrodes 2 and 3 facing each other in the reflection case 1 formed in the same manner as the chip LED of the embodiment, and inside the side wall 1c of the reflection case 1, that is, the opening bottom surface 1a.
The difference from the first embodiment is that a notch 13 is provided at the boundary L of the opening side surface 1b.
【００４１】この構成によれば、切り欠き部13において
銀ペースト４のブリーディング部11を止めることがで
き、第１実施形態における突起部12と同様の効果が得ら
れる。According to this configuration, the bleeding portion 11 of the silver paste 4 can be stopped at the notch portion 13, and the same effect as the projection portion 12 in the first embodiment can be obtained.
【００４２】なお、第２実施形態においても第１実施形
態と同様な構成上の変更を行うことが考えられる。In the second embodiment, it is conceivable to make the same structural change as in the first embodiment.
【００４３】図３は本発明の第３実施形態を説明するた
めのチップＬＥＤの構成を示す図であって、図３(a)は
チップＬＥＤの平面図、図３(b)は図３(a)のチップＬＥ
Ｄの断面図である。FIG. 3 is a view showing the structure of a chip LED for describing a third embodiment of the present invention. FIG. 3 (a) is a plan view of the chip LED, and FIG. a) Chip LE
It is sectional drawing of D.
【００４４】第３実施形態では、反射ケース１内におけ
る一対の電極２，３の間(対向間隔Ｓ部分)に位置する反
射ケース１の開口部底面1aの両側壁1c間において、一方
の電極３におけるＬＥＤ５を実装するパット部3aに面す
る部分の高さを、その一方の電極３の設置面よりも高く
して絶縁突起部14を形成したものである。In the third embodiment, one of the electrodes 3 is located between the side walls 1c of the bottom surface 1a of the opening of the reflection case 1 located between the pair of electrodes 2 and 3 in the reflection case 1 (a portion facing the gap S). The height of the portion facing the pad portion 3a on which the LED 5 is mounted is higher than the installation surface of one of the electrodes 3 to form the insulating projection portion 14.
【００４５】この構成によれば、電極３のパッド部3aに
面する絶縁突起部14の段差14aによって、銀ペースト４
のブリーディング部11を止めることができるという効果
が得られる。According to this configuration, the silver paste 4 is formed by the step 14a of the insulating protrusion 14 facing the pad 3a of the electrode 3.
The bleeding portion 11 can be stopped.
【００４６】なお、反射ケース１の開口部底面1aにおけ
る他方の電極２のパッド部2aに面する部分の高さ(絶縁
突起部14のパッド部2a側の高さ)は、パッド部2aと同じ
高さになるように形成してもよい。また、金属ワイヤ６
の下方の絶縁突起部14に凹部を形成して金属ワイヤ６が
入り込むようにすることも考えられる。The height of the portion of the other electrode 2 facing the pad portion 2a on the bottom surface 1a of the opening of the reflective case 1 (the height of the insulating protrusion 14 on the pad portion 2a side) is the same as that of the pad portion 2a. It may be formed to have a height. In addition, metal wire 6
It is also conceivable to form a recess in the insulating projection 14 below the metal wire 6 so that the metal wire 6 enters.
【００４７】さらに、絶縁突起部14がＬＥＤ５の発光活
性層よりも低い領域を有し、しかも反射ケース１の側壁
1cが前記発光活性層よりも高い領域を有するようにする
ことによって、反射ケース１の開口部全体においてＬＥ
Ｄ５の発光を妨げない良好な発光が可能になる。Further, the insulating projection 14 has a region lower than the light emitting active layer of the LED 5, and furthermore, the side wall of the reflection case 1.
1c has a region higher than the light emitting active layer, so that the entire opening of the reflection case 1 has an LE.
Good light emission that does not hinder the light emission of D5 is enabled.
【００４８】[0048]
【発明の効果】以上説明したように、本発明の電子部品
によれば、第１の電極と第２の電極間で、一方の電極に
対して電子素子を接続するための導電性材のブリーディ
ングを防止することができるため、ブリーディングによ
る両電極間のショートを防止することができ、信頼性の
高い電子素子を提供することができる。As described above, according to the electronic component of the present invention, bleeding of a conductive material for connecting an electronic element to one of the electrodes between the first electrode and the second electrode. Therefore, a short circuit between both electrodes due to bleeding can be prevented, and a highly reliable electronic element can be provided.
【００４９】また電子素子をＬＥＤ素子などの発光素子
としても、その発光作用を妨げずに前記ブリーディング
を防止することができるため、信頼性の高い発光装置が
得られることになる。Even if the electronic element is a light-emitting element such as an LED element, the bleeding can be prevented without hindering the light-emitting action, so that a highly reliable light-emitting device can be obtained.
【図１】本発明の第１実施形態を説明するためのチップ
ＬＥＤの構成を示す図であって、図１(a)はチップＬＥ
Ｄの平面図、図１(b)は図１(a)におけるＡ−Ａ線断面
図、図１(c)は図１(a)におけるＢ−Ｂ線断面図である。FIG. 1 is a view showing a configuration of a chip LED for describing a first embodiment of the present invention, and FIG. 1 (a) shows a chip LE;
D is a plan view, FIG. 1B is a sectional view taken along line AA in FIG. 1A, and FIG. 1C is a sectional view taken along line BB in FIG.
【図２】本発明の第２実施形態を説明するためのチップ
ＬＥＤの構成を示す図であって、図２(a)はチップＬＥ
Ｄの平面図、図２(b)は図２(a)のチップＬＥＤの断面図
である。FIG. 2 is a view showing a configuration of a chip LED for describing a second embodiment of the present invention, and FIG. 2 (a) shows a chip LE;
D is a plan view, and FIG. 2B is a cross-sectional view of the chip LED of FIG. 2A.
【図３】本発明の第３実施形態を説明するためのチップ
ＬＥＤの構成を示す図であって、図３(a)はチップＬＥ
Ｄの平面図、図３(b)は図３(a)のチップＬＥＤの断面図
である。FIG. 3 is a view showing a configuration of a chip LED for describing a third embodiment of the present invention, and FIG. 3 (a) shows a chip LE;
D is a plan view, and FIG. 3B is a cross-sectional view of the chip LED of FIG. 3A.
【図４】反射ケースを有するチップＬＥＤの従来例を示
す図であって、図４(a)はチップＬＥＤの平面図、図４
(b)は図４(a)のチップＬＥＤの断面図である。4A and 4B are diagrams showing a conventional example of a chip LED having a reflection case, wherein FIG. 4A is a plan view of the chip LED, and FIG.
FIG. 4B is a sectional view of the chip LED of FIG.
【図５】反射ケースを有するチップＬＥＤの従来の他の
例を示す図であって、図４(a)はチップＬＥＤの平面
図、図４(b)は図４(a)のチップＬＥＤの断面図である。5A and 5B are diagrams showing another conventional example of a chip LED having a reflection case, wherein FIG. 4A is a plan view of the chip LED, and FIG. 4B is a view of the chip LED of FIG. It is sectional drawing.
【図６】図４に示した従来例における銀ペーストブリー
ディング状態を示す説明図である。FIG. 6 is an explanatory view showing a silver paste bleeding state in the conventional example shown in FIG. 4;
【図７】図５に示した従来例における銀ペーストブリー
ディング状態を示す説明図である。FIG. 7 is an explanatory view showing a silver paste bleeding state in the conventional example shown in FIG.
１…反射ケース、 1a…反射ケースの開口部底面、 1b
…反射ケースの開口部側面、 1c…反射ケースの側壁、
２，３…電極、 ４…銀ペースト、 ５…ＬＥＤ、
６…金属ワイヤ、 ７…樹脂封止部、 11…銀ペースト
のブリーディング部、 12…突起部、 13…切り欠き
部、 14…絶縁突起部。1 ... Reflection case, 1a ... Reflection case opening bottom, 1b
… Side surface of the opening of the reflective case, 1c… side wall of the reflective case,
2,3 ... electrode, 4 ... silver paste, 5 ... LED,
6: metal wire, 7: resin sealing portion, 11: bleeding portion of silver paste, 12: projection portion, 13: cutout portion, 14: insulating projection portion.
Claims (13)
第１の電極および第２の電極と、前記第１の電極上に導
電性材を介して載置された電子素子と、前記絶縁体上に
前記電子素子の側方から前記第１の電極および第２の電
極の対向方向に渡って設けられた側壁とを備え、前記第
１の電極と第２の電極との対向間隔部分における少なく
とも前記絶縁体と前記側壁との境界部分に凹部または凸
部を設けたことを特徴とする電子部品。A first electrode and a second electrode which are opposed to each other at a distance on an insulator; an electronic element mounted on the first electrode via a conductive material; A side wall provided on an insulator from a side of the electronic element in a direction opposite to the first electrode and the second electrode, and a facing space between the first electrode and the second electrode; 3. An electronic component according to claim 1, wherein a concave portion or a convex portion is provided at least at a boundary between the insulator and the side wall.
を細線によって電気的に接続したことを特徴とする請求
項１記載の電子部品。2. The electronic component according to claim 1, wherein an upper portion of said electronic element and said second electrode are electrically connected by a thin wire.
側方に設けたことを特徴とする請求項１記載の電子部
品。3. The electronic component according to claim 1, wherein the side wall is provided on at least both sides of the electronic element.
壁が光反射部であることを特徴とする請求項１ないし３
のいずれか１項記載の電子部品。4. The electronic device according to claim 1, wherein the electronic device is a light emitting device, and the side wall is a light reflecting portion.
The electronic component according to any one of the preceding claims.
て、前記側壁と前記絶縁体と前記第１の電極および第２
の電極とを一体的に設置したことを特徴とする請求項１
記載の電子部品。5. The side wall, the insulator, the first electrode, and the second electrode by resin sealing using a lead frame.
2. The electrode according to claim 1, wherein the electrodes are integrally provided.
Electronic components as described.
しくは下部を略同一高さに設けたことを特徴とする請求
項１または５記載の電子部品。6. The electronic component according to claim 1, wherein upper portions or lower portions of the first electrode and the second electrode are provided at substantially the same height.
の上にも設けたことを特徴とする請求項１，５または６
記載の電子部品。7. The device according to claim 1, wherein the side wall is provided also on the first electrode and the second electrode.
Electronic components as described.
開口部底面における前記絶縁体の長手方向に前記第１の
電極と第２の電極とを対向設置し、前記第１の電極と第
２の電極との対向間隔を第１の電極の長辺の長さ以下に
したことを特徴とする請求項３ないし７のいずれか１項
記載の電子部品。8. A first electrode and a second electrode are opposed to each other in a longitudinal direction of the insulator on a bottom surface of a substantially rectangular opening formed between the both side walls, and the first electrode and the second electrode are arranged opposite to each other. The electronic component according to any one of claims 3 to 7, wherein a distance between the first electrode and the second electrode is less than or equal to a length of a long side of the first electrode.
１の電極と第２の電極を延在させたことを特徴とする請
求項３ないし８のいずれか１項記載の電子部品。9. The electronic component according to claim 3, wherein the first electrode and the second electrode extend to a lower portion or a vicinity of the both side walls.
た第１の電極および第２の電極と、前記第１の電極上に
導電性材を介して載置された電子素子と、前記絶縁体上
に前記電子素子の側方から前記第１の電極および第２の
電極の対向方向に渡って設けられた側壁とを備え、前記
第１の電極と第２の電極との対向間隔部分における前記
絶縁体上に前記側壁まで前記第１の電極上面よりも突出
させて絶縁突起部を設けたことを特徴とする電子部品。10. A first electrode and a second electrode which are opposed to each other at a distance on an insulator, an electronic element mounted on the first electrode via a conductive material, and A side wall provided on an insulator from a side of the electronic element in a direction opposite to the first electrode and the second electrode, and a facing space between the first electrode and the second electrode; 3. An electronic component according to claim 1, wherein an insulating protrusion is provided on the insulator so as to protrude from the upper surface of the first electrode to the side wall.
とを細線によって電気的に接続したことを特徴とする請
求項10記載の電子部品。11. The electronic component according to claim 10, wherein an upper part of said electronic element and said second electrode are electrically connected by a thin wire.
を形成したことを特徴とする請求項10または11記載の電
子部品。12. The electronic component according to claim 10, wherein a concave portion is formed in the insulating protrusion below the thin wire.
間で形成される略長方形状の開口部底面における前記絶
縁体の長手方向に前記第１の電極と第２の電極とを対向
設置し、前記絶縁突起部が前記発光素子の発光活性層よ
りも低い領域を有し、前記側壁が前記発光活性層よりも
高い領域を有するように構成したことを特徴とする請求
項10ないし12のいずれか１項記載の電子部品。13. The electronic device is a light-emitting device, wherein the first electrode and the second electrode are opposed to each other in a longitudinal direction of the insulator on a bottom surface of a substantially rectangular opening formed between side walls. 13. The light-emitting device according to claim 10, wherein the insulating protrusion has a region lower than the light-emitting active layer of the light-emitting element, and the sidewall has a region higher than the light-emitting active layer. The electronic component according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10043897A JP3707024B2 (en) | 1997-04-17 | 1997-04-17 | Electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10043897A JP3707024B2 (en) | 1997-04-17 | 1997-04-17 | Electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10294495A true JPH10294495A (en) | 1998-11-04 |
| JP3707024B2 JP3707024B2 (en) | 2005-10-19 |
Family
ID=14273956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10043897A Expired - Fee Related JP3707024B2 (en) | 1997-04-17 | 1997-04-17 | Electronic components |
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| Country | Link |
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| JP (1) | JP3707024B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2004112155A1 (en) * | 2003-06-11 | 2004-12-23 | Rohm Co., Ltd. | Optical semiconductor device |
| JP2007067443A (en) * | 2003-02-18 | 2007-03-15 | Sharp Corp | Semiconductor light-emitting device and electronic imaging device |
| JP2007311749A (en) * | 2006-04-19 | 2007-11-29 | Nichia Chem Ind Ltd | Semiconductor device |
| JP2008091792A (en) * | 2006-10-04 | 2008-04-17 | Nichia Chem Ind Ltd | Semiconductor device |
| JP2008153610A (en) * | 2006-11-22 | 2008-07-03 | Nichia Chem Ind Ltd | Semiconductor device |
| JP2009010049A (en) * | 2007-06-26 | 2009-01-15 | Panasonic Electric Works Co Ltd | Light-emitting device |
| JP2009188201A (en) * | 2008-02-06 | 2009-08-20 | Sharp Corp | Semiconductor light-emitting device |
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1997
- 1997-04-17 JP JP10043897A patent/JP3707024B2/en not_active Expired - Fee Related
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|---|---|---|---|---|
| JP2007067443A (en) * | 2003-02-18 | 2007-03-15 | Sharp Corp | Semiconductor light-emitting device and electronic imaging device |
| US7429759B2 (en) | 2003-06-11 | 2008-09-30 | Rohm Co., Ltd. | Optical semiconductor device with improved illumination efficiency |
| WO2004112155A1 (en) * | 2003-06-11 | 2004-12-23 | Rohm Co., Ltd. | Optical semiconductor device |
| JP2007311749A (en) * | 2006-04-19 | 2007-11-29 | Nichia Chem Ind Ltd | Semiconductor device |
| US7432589B2 (en) | 2006-04-19 | 2008-10-07 | Nichia Corporation | Semiconductor device |
| JP2008091792A (en) * | 2006-10-04 | 2008-04-17 | Nichia Chem Ind Ltd | Semiconductor device |
| JP2008153610A (en) * | 2006-11-22 | 2008-07-03 | Nichia Chem Ind Ltd | Semiconductor device |
| KR101297406B1 (en) * | 2007-03-29 | 2013-08-19 | 서울반도체 주식회사 | Light emitting diode |
| JP2009010049A (en) * | 2007-06-26 | 2009-01-15 | Panasonic Electric Works Co Ltd | Light-emitting device |
| JP2009188201A (en) * | 2008-02-06 | 2009-08-20 | Sharp Corp | Semiconductor light-emitting device |
| CN102522485A (en) * | 2008-02-06 | 2012-06-27 | 夏普株式会社 | Semiconductor light emitting device |
| JP2010129985A (en) * | 2008-12-01 | 2010-06-10 | Nichia Corp | Semiconductor device |
| JP2011146712A (en) * | 2010-01-18 | 2011-07-28 | Sdi Corp | Frame of package for light-emitting device |
| JP2021027144A (en) * | 2019-08-05 | 2021-02-22 | ローム株式会社 | Semiconductor light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3707024B2 (en) | 2005-10-19 |
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