JPH102793A - Pyroelectric infrared detection element and pyroelectric infrared sensor - Google Patents
Pyroelectric infrared detection element and pyroelectric infrared sensorInfo
- Publication number
- JPH102793A JPH102793A JP9032254A JP3225497A JPH102793A JP H102793 A JPH102793 A JP H102793A JP 9032254 A JP9032254 A JP 9032254A JP 3225497 A JP3225497 A JP 3225497A JP H102793 A JPH102793 A JP H102793A
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric
- light receiving
- substrate
- detecting element
- pyroelectric infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims abstract description 115
- 238000005488 sandblasting Methods 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000011358 absorbing material Substances 0.000 abstract description 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001120 nichrome Inorganic materials 0.000 abstract description 4
- 235000002017 Zea mays subsp mays Nutrition 0.000 abstract 2
- 241000482268 Zea mays subsp. mays Species 0.000 abstract 2
- 229910012463 LiTaO3 Inorganic materials 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 71
- 238000010586 diagram Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 25
- 238000004088 simulation Methods 0.000 description 18
- 238000004458 analytical method Methods 0.000 description 17
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- 230000001070 adhesive effect Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
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- 238000006073 displacement reaction Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- -1 LiTaO 3 Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
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Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、物体から輻射され
る赤外線を検知する焦電型赤外線検知素子、及び赤外線
センサの改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pyroelectric infrared detecting element for detecting infrared radiation radiated from an object, and an improvement of an infrared sensor.
【０００２】[0002]
【従来の技術】焦電型赤外線検知素子は、近時において
は、人の動きを検知する人感センサなどとして広く使用
されている。図２２〜図２５に、従来の焦電型赤外線検
知素子を示す。図２２は、焦電型赤外線検知素子を利用
した赤外線センサの構造を概略的に示す分解斜視図であ
る。2. Description of the Related Art In recent years, pyroelectric infrared detecting elements have been widely used as human motion sensors for detecting human motion. 22 to 25 show a conventional pyroelectric infrared detecting element. FIG. 22 is an exploded perspective view schematically showing a structure of an infrared sensor using a pyroelectric infrared detecting element.
【０００３】この赤外線センサ１００は、図に見るよう
に、３つの出力ピン１０１を下方に突出させた底板１０
２上に、信号処理部を構成するためにＦＥＴ１０３、高
抵抗素子１０４などのチップ部品を実装した回路基板１
０５を載せ、その回路基板１０５の側部に一対の支持台
１０５ａ，１０５ｂを対向配置させており、これらの一
対の支持台１０５ａ，１０５ｂの上部に、受光部１０
７，１０７を形成した焦電型赤外線検知素子１０６の両
側端を導電性接着剤などで固着してから、底板１０２の
上方より、赤外線を透過させるシリコン製フィルタ１１
０ａを窓部に貼付したパッケージカバー１１０を被せて
組立られる構造となっている。As shown in FIG. 1, the infrared sensor 100 has a bottom plate 10 having three output pins 101 protruding downward.
2 is a circuit board 1 on which chip components such as an FET 103 and a high resistance element 104 are mounted to constitute a signal processing unit.
05, and a pair of support tables 105a and 105b are arranged on the side of the circuit board 105 so as to face each other. The light receiving unit 10 is mounted on the pair of support tables 105a and 105b.
After fixing both ends of the pyroelectric infrared detecting element 106 on which the layers 7 and 107 are formed with a conductive adhesive or the like, a silicon filter 11 that transmits infrared rays from above the bottom plate 102.
0a is attached to a window cover and a package cover 110 is assembled.
【０００４】図２３（ａ）〜（ｄ）は、このような焦電
型赤外線検知素子の構造を説明する図であり、（ａ）は
受光部の配置を示す焦電体基板の概略的な平面図、
（ｂ）は焦電体基板の表面に形成される導電パターン
図、（ｃ）は裏面に形成される導電パターン図、（ｄ）
は赤外線センサの概略等価回路を示しており、焦電体基
板の受光部１０７，１０７に蓄積された電荷を、高抵抗
ＲとＦＥＴでインピーダンス変換して出力させる構成に
なっている。図２４は回路基板上に焦電型検知素子を取
り付けたものの側面図である。FIGS. 23A to 23D are views for explaining the structure of such a pyroelectric infrared detecting element. FIG. 23A is a schematic view of a pyroelectric substrate showing an arrangement of a light receiving section. Plan view,
(B) is a conductive pattern diagram formed on the front surface of the pyroelectric substrate, (c) is a conductive pattern diagram formed on the back surface, (d)
Indicates a schematic equivalent circuit of the infrared sensor, and is configured to convert the electric charges accumulated in the light receiving units 107 and 107 of the pyroelectric substrate into impedance by the high resistance R and the FET and output the converted electric charges. FIG. 24 is a side view of a pyroelectric sensing element mounted on a circuit board.
【０００５】この図２３に示した焦電型赤外線検知素子
１０６は、一般的に使用されているデュアルタイプと呼
ばれ、焦電体基板１０６ａの中央には、プラス、マイナ
スに分極された１組の受光部１０７と１０７が対向配置
され、基板１０６ａの両側端には一対の出力端子１０９
が形成され、導電性接着剤によって回路基板の支持台に
固着されている。The pyroelectric infrared detecting element 106 shown in FIG. 23 is generally called a dual type, and a pair of positive and negative polarized light is provided at the center of a pyroelectric substrate 106a. The light receiving sections 107 and 107 are disposed to face each other, and a pair of output terminals
Is formed and fixed to the support base of the circuit board by a conductive adhesive.
【０００６】ここに、焦電体基板１０６ａは、ＰｂＴｉ
Ｏ3、ＰＺＴ等のセラミック材料、ＬｉＴａＯ3等の単結
晶材料や、ＰＶＦ2等の高分子材料等の、焦電効果を有
する材料が用いられ、その表面には、ＮｉＣｒ等の赤外
線吸収材料を蒸着するなどして２つの電極１０７ａ，１
０７ａを対設し、それぞれの裏面には、対応した２つの
電極１０７ｂ，１０７ｂを形成して、焦電体基板１０６
ａの表、裏より１組の上下電極１０７ａ，１０７ｂで挟
みこんで受光部１０７，１０７を形成している。Here, the pyroelectric substrate 106a is made of PbTi
A material having a pyroelectric effect such as a ceramic material such as O 3 or PZT, a single crystal material such as LiTaO 3 , or a polymer material such as PVF 2 is used, and an infrared absorbing material such as NiCr is deposited on the surface thereof. Two electrodes 107a, 1
07a, and two corresponding electrodes 107b, 107b are formed on the back surfaces thereof, respectively.
The light receiving portions 107, 107 are formed by being sandwiched between a pair of upper and lower electrodes 107a, 107b from the front and back of a.
【０００７】このようにして焦電体基板１０４の表面に
形成された２つの受光部１０７，１０７は、基板１０６
ａの表、裏に形成された導電パターン１０８，１０８に
よる結線を替えることによって、受光部１０７，１０７
を直列に接続したり、並列に接続したりできるようにな
っている。したがって、このような焦電体基板１０６ａ
によれば、その受光部１０７，１０７に赤外線が入射す
れば、入射した赤外線が熱に変換される時に電荷を生じ
させるので、このとき生じた電荷をＦＥＴと高抵抗素子
Ｒとによるインピーダンス変換回路によって、電圧とし
て取り出す。The two light receiving sections 107 formed on the surface of the pyroelectric substrate 104 in this manner
By changing the connection by the conductive patterns 108, 108 formed on the front and back of a, the light receiving units 107, 107 are changed.
Can be connected in series or in parallel. Therefore, such a pyroelectric substrate 106a
According to the method, when infrared rays are incident on the light receiving units 107 and 107, charges are generated when the incident infrared rays are converted into heat. Therefore, the generated charges are converted into an impedance conversion circuit including an FET and a high-resistance element R. Is taken out as a voltage.
【０００８】ところで、このような焦電型赤外線検知素
子では、焦電素子の感度を向上させるために、光熱変換
効率を良くすることが望まれているが、そのため、従来
から焦電体基板の熱絶縁抵抗を大きくする一方、その厚
みを一般に４０μｍ〜１００μｍと薄くし、基板の面積
もできるだけ小さくし、しかも他の回路部品の熱影響を
避けるため、出来る限り、他の回路部品に対して熱的ア
イソレーションが良好で、熱伝導の悪い材料を使うなど
の工夫が設計段階からなされている。In such a pyroelectric infrared detecting element, it is desired to improve the photothermal conversion efficiency in order to improve the sensitivity of the pyroelectric element. While increasing the thermal insulation resistance, the thickness is generally reduced to 40 μm to 100 μm, the area of the substrate is reduced as much as possible, and in order to avoid the thermal influence of other circuit components, heat is applied to other circuit components as much as possible. Ingenuity has been taken from the design stage, such as using a material with good thermal isolation and poor heat conduction.
【０００９】[0009]
【発明が解決しようとする課題】ところが、このような
焦電型赤外線検知素子は、非常に薄い薄片からなる焦電
体基板を導電性接着剤を用いて、その両端を回路基板上
に固着した構造になっているため、赤外線が入射されな
いときでも、焦電体基板に温度変化が加わると、焦電体
基板、導電性接着剤、回路基板の支持台などの線膨張率
の違いにより、図２５に矢印で示したように、圧縮また
は引っ張りのストレスが加わる。However, in such a pyroelectric infrared detecting element, both ends of a pyroelectric substrate made of a very thin flake are fixed on a circuit board using a conductive adhesive. Due to the structure, even when infrared light is not incident, if a temperature change is applied to the pyroelectric substrate, the pyroelectric substrate, conductive adhesive, the support base of the circuit board, etc. As indicated by the arrow at 25, compressive or tensile stress is applied.
【００１０】そして、このときに焦電体基板に加えられ
る圧縮または引っ張りのストレスは、焦電体基板、電極
などの欠陥部や、ダイシング等による切断時に発生した
チッピング、マイクロクラック部などに応力を集中さ
せ、これが原因となって不要な電荷を発生し、このとき
受光部はポップコンノイズと称される突発的なノイズを
出力するなどの問題が指摘されている。[0010] The compressive or tensile stress applied to the pyroelectric substrate at this time exerts stress on defective portions of the pyroelectric substrate, electrodes, and the like, chipping and micro cracks generated during cutting by dicing or the like. It has been pointed out that unnecessary charges are generated due to this concentration, and at this time, the light receiving section outputs sudden noise called pop-con noise.
【００１１】そのため、従来では、このようなポップコ
ンノイズを低減するため、回路基板材料、導電性接着剤
などの材料面から試行錯誤によって最適化を図ることが
繰り返し行われているが、単に材料を選択するだけで
は、このようなノイズを十分に低減することができず、
赤外線検知素子の今日の開発課題は、ポップコンノイズ
の軽減化に向けられているといっても過言ではない。For this reason, conventionally, in order to reduce such pop-con noise, it has been repeatedly performed by trial and error to optimize the material of the circuit board material, the conductive adhesive, and the like. By just choosing, such noise cannot be reduced sufficiently.
It is no exaggeration to say that today's development issues for infrared detectors are aimed at reducing pop noise.
【００１２】そこで、本出願人らは、このような開発課
題を解決するため、特願平８−１１８４０６号において
は、焦電体基板に形成される受光部に、その前三方向を
取り囲むくり抜き孔を形成するという、形状、構造的な
アプローチから解決策を提案したが、この先願において
提案した手法は、温度変化が生じた場合に焦電対基板の
一部に生じる一方向の圧縮または引っ張りストレスに着
目して、そのストレスによる応力集中を軽減させるもの
であった。In order to solve such a development problem, the present applicant has disclosed in Japanese Patent Application No. 8-118406 that a light receiving portion formed on a pyroelectric substrate has a hollow surrounding the front three directions. Although a solution was proposed from the shape and structural approach of forming a hole, the method proposed in the earlier application proposed a unidirectional compression or tension that occurs on a part of the pyrocouple substrate when a temperature change occurs. Paying attention to stress, it is intended to reduce stress concentration due to the stress.
【００１３】ところで、本願発明が対象とする微小な半
導体製品は、光印刷技術などの方法を用いて多量に製造
されるものであるため、製造した商品を追加工すること
は出来ず、そのため、設計段階からコンピュータによる
シュミレーションを行って、形状、構造を特定する研究
がなされており、ホップコンノイズの発生要因を探る場
合も、発生要因となる外的条件を設計段階から予め特定
する必要があり、外的条件が異なる毎に解析結果も異な
るものである。[0013] By the way, since the minute semiconductor products to which the present invention is applied are manufactured in large quantities by using a method such as optical printing technology, the manufactured products cannot be additionally processed. Research has been conducted to determine the shape and structure by computer simulation from the design stage, and even when searching for the cause of hop con noise, it is necessary to identify in advance the external conditions that cause the hop con noise from the design stage. Also, the analysis results are different for different external conditions.
【００１４】先に特願平８−１１８４０６号において提
案した手法は、外的要因として温度変化が生じた場合
に、基板の一部に生じる一方向の圧縮または引っ張りス
トレスに着目し、そのストレスを軽減させる形状、構造
を特定して、ホップコンノイズの軽減を図るものであっ
たが、一般の半導体素子と同様にして、設計段階からコ
ンピュータによるシュミレーションを行って開発された
ものであった。The technique proposed in Japanese Patent Application No. Hei 8-118406 focuses on one-way compressive or tensile stress generated in a part of a substrate when a temperature change occurs as an external factor, and considers the stress. The hop con noise was intended to be reduced by specifying the shape and structure to be reduced, but it was developed by computer simulation from the design stage in the same manner as a general semiconductor element.
【００１５】しかしながら、本発明者らのその後の試
験、研究によれば、ポップコンノイズを発生させる外的
要因は、焦電体基板が、他の回路部品を実装した回路基
板に取り付けられるときの位置ズレや誤差、焦電体基板
それ自体のバラツキなども無視できない要因となってお
り、焦電体基板にこのような誤差やバラツキが存在する
条件下で温度変化を受けた場合には、一方向の圧縮また
は引っ張りのストレスに加えて、更に多方向のストレ
ス、つまり捻れを生じるようなストレスが発生してしま
い、このようなストレスによる応力集中もポップコンノ
イズの発生に大きい影響を与えていることが知得され
た。However, according to subsequent tests and studies by the present inventors, the external factor that causes pop-con noise is that the pyroelectric substrate is located at a position where the pyroelectric substrate is mounted on a circuit board on which other circuit components are mounted. Deviations and errors, and variations in the pyroelectric substrate itself are also factors that cannot be ignored.If the pyroelectric substrate is subjected to a temperature change under conditions where such errors or variations exist, one-way In addition to the compressive or tensile stress, stress in multiple directions, that is, stress that causes torsion, is generated, and stress concentration due to such stress also has a large effect on the occurrence of pop-con noise. I learned.
【００１６】本出願は、本発明者らによる鋭意検討の結
果、到達したものであり、温度変化による一方向のスト
レスに着目して提案された先願発明を基礎として、回路
基板上の位置ズレや誤差などに起因する多方向のストレ
スにも注目して開発されたホップコンノイズの発生防止
に更に有効な手法を提案するものである。The present application has been achieved as a result of diligent studies by the present inventors, and based on the prior application invention which has been proposed focusing on one-way stress due to a temperature change, a positional shift on a circuit board is provided. The present invention proposes a more effective method for preventing the occurrence of hop connoise, which has been developed by paying attention to multi-directional stress caused by errors and the like.
【００１７】[0017]
【課題を解決するための手段】上記目的を達成するため
提案される請求項１に記載の発明は、焦電体基板の表、
裏面に、上、下一組の電極を形成して受光部となし、そ
の受光部に赤外線を入射させて電荷を生じさせる構成と
した焦電型赤外線検知素子において、受光部には、受光
部の前三方向を取り囲むくり抜き孔を形成することによ
って、焦電体基板の一部で片持ち支持させた構造にして
いる。According to the first aspect of the present invention, there is provided a pyroelectric substrate, comprising:
A pyroelectric infrared detecting element configured to form a pair of electrodes on the back side to form a set of electrodes to form a light receiving section, and to make an infrared ray incident on the light receiving section to generate a charge, wherein the light receiving section includes a light receiving section. By forming hollow holes surrounding the front three directions, the structure is made to be cantilevered by a part of the pyroelectric substrate.
【００１８】請求項２に記載の焦電型赤外線検知素子
は、焦電体基板に複数の受光部を形成する場合に適用さ
れ、それぞれの受光部には、基板の内方に向かって略コ
字状に張り出すくり抜き孔を、受光部の前三方向を取り
囲むようにして形成し、基板の一部で片持ち支持された
構造をなしている。このような焦電型赤外線検知素子で
は、焦電体基板を、信号処理部やチップ部品を実装させ
た回路基板の支持部などに導電性接着剤を用いて固着し
た際、焦電体基板、支持部、回路基板の熱膨張率の差異
によって焦電体基板に応力を生じた場合でも、受光部に
は、その前三方向を取り囲むようにくり抜き孔が形成さ
れているため、そこで応力が吸収される。このため、受
光部に不要な応力が集中してポップコンノイズが発生す
ることが有効に防止される。The pyroelectric infrared detecting element according to the second aspect is applied to a case where a plurality of light receiving portions are formed on a pyroelectric substrate, and each of the light receiving portions is substantially co-incident toward the inside of the substrate. Hollow holes protruding in the shape of a letter are formed so as to surround the front three directions of the light receiving portion, and have a structure that is cantilevered by a part of the substrate. In such a pyroelectric infrared detecting element, when a pyroelectric substrate is fixed to a support portion of a circuit board on which a signal processing unit or a chip component is mounted using a conductive adhesive, the pyroelectric substrate, Even if stress occurs in the pyroelectric substrate due to the difference in the coefficient of thermal expansion between the support and the circuit board, the light-receiving part has a hollowed hole that surrounds the front three directions. Is done. For this reason, it is effectively prevented that unnecessary stress concentrates on the light receiving portion and pop-con noise is generated.
【００１９】また、請求項３に記載の焦電型赤外線検知
素子は、焦電体基板に複数の受光部を形成する場合に適
用される別の態様を提案しており、赤外線検知素子の焦
電体基板に形成された複数の受光部は、基板内方に張り
出す共通のくり抜き孔で囲むことによって、基板の一部
で片持ち支持される構造をなしている。この態様の場
合、複数の受光部は、基板の適所に集められ、その周囲
に面積の大きいくり抜き孔が形成されるため、ストレス
の吸収緩和効果も、その孔部の面積に応じて大きくな
る。The pyroelectric infrared detecting element according to a third aspect of the present invention proposes another aspect applied to a case where a plurality of light receiving sections are formed on a pyroelectric substrate. The plurality of light receiving sections formed on the electric circuit board are surrounded by a common hollow extending inward of the board, so that the light receiving section is cantilevered by a part of the board. In this case, the plurality of light receiving portions are gathered at appropriate locations on the substrate, and a large-sized hollow hole is formed around the plurality of light receiving portions. Therefore, the effect of absorbing and mitigating stress increases according to the area of the hole portion.
【００２０】請求項４では、請求項１〜３において、受
光部の周囲に形成されるくり抜き孔のコーナ部に丸み加
工を施している。くり抜き孔の形成時や熱応力を受けた
ときでも、コーナ部にクラックを生じにくい構造にした
ものである。これらの請求項１〜４は、焦電体基板の受
光部に、その前三方向を取り囲むくり抜き孔を形成した
点を構造的な特徴とするもので、いずれも温度変化を与
えたときに生じる一方向のストレスに着目して、ポップ
コンノイズの発生を抑制するものである。According to a fourth aspect of the present invention, in the first to third aspects, a corner portion of a hollow hole formed around the light receiving portion is rounded. Even when a hollow hole is formed or when a thermal stress is applied, a crack is hardly generated in a corner portion. These claims 1 to 4 are structurally characterized in that the light receiving portion of the pyroelectric substrate is formed with hollow holes surrounding the front three directions, all of which occur when a temperature change is given. Focusing on one-way stress, the generation of pop-con noise is suppressed.
【００２１】一方、本願において新しく提案する請求項
５〜７は、焦電体基板の受光部に、その前三方向を取り
囲むようにして形成されるくり抜き孔をの形状を特定す
るにあたって、焦電体基板の回路実装誤差やズレを考慮
した条件下で熱的変化を与えたときに生じるねじれスト
レスにも注目して、応力吸収効果の高い形状を提案する
ものである。On the other hand, claims 5 to 7 newly proposed in the present application specify the shape of a hollow formed in the light receiving portion of the pyroelectric substrate so as to surround the front three directions. The present invention also proposes a shape having a high stress absorption effect by paying attention to torsional stress generated when a thermal change is given under a condition in which a circuit mounting error and a deviation of a body substrate are considered.
【００２２】本願において更に提案する請求項６では、
くり抜き孔は、全体的形状が馬蹄形になっており、請求
項７ではくり抜き孔の両終端において、くり抜き孔の孔
幅よりも大きい直径の円形の逃がし孔部を付加した形状
にしている。また、請求項８は、くり抜き孔をサンドブ
ラスト加工によって、高い精度で効率よく形成したもの
を提案している。In claim 6 which is further proposed in the present application,
The hollow hole has a horseshoe shape as a whole. According to the seventh aspect, a circular relief hole having a diameter larger than the width of the hollow hole is added at both ends of the hollow hole. Claim 8 proposes that the hollowed out hole is efficiently formed with high accuracy by sandblasting.
【００２３】更に、請求項９は、上記したくり抜き孔、
逃がし孔部を形成した焦電体基板を用いて構成される焦
電型赤外線センサを提案しており、このような赤外線セ
ンサによって、従来に比べてポップコンノイズの発生の
少ない、信頼性の高い赤外線センサが提供できる。な
お、本明細書では、後述する実験例１，２のいずれにお
いても、有限要素法を用いて応力分布を求めるシミュレ
ーション解析を行っているが、かかる応力分布を求める
シミュレーションの方法は、有限要素法を用いる方法に
限定されず、他の方法、たとえば、アナログ的手法であ
る光弾性を用いた方法等でも可能である。Further, the ninth aspect of the present invention is the above-mentioned hollow hole,
We have proposed a pyroelectric infrared sensor constructed using a pyroelectric substrate with an escape hole, and with such an infrared sensor, a highly reliable infrared sensor with less pop-con noise than before. A sensor can be provided. Note that, in this specification, in each of Experimental Examples 1 and 2 described below, a simulation analysis for obtaining a stress distribution using the finite element method is performed. However, the present invention is not limited to the method using, and other methods, such as a method using photoelasticity which is an analog method, are also possible.
【００２４】また、くり抜き孔の形状としては、コの字
状に形成したものについてのシュミレーション結果を説
明する程度にとどめているが、受光部の三方を取り囲ん
で受光部を片持ち支持できる形状であれば、舌片状、切
り欠きのあるリング状であっても十分な効果が得られる
ことはいうまでもない。Further, the shape of the hollow hole is limited to the extent to explain the simulation result of the U-shaped hole, but it has a shape that surrounds three sides of the light receiving unit and cantileverly supports the light receiving unit. Needless to say, a sufficient effect can be obtained even in the shape of a tongue piece or a ring shape with a notch.
【００２５】[0025]
【発明の実施の形態】以下に、添付図を参照しながら、
本発明の好ましい実施の形態について、詳細に説明す
る。 （焦電型基板の実施例）図１〜図６は、くり抜き孔を形
成した焦電型基板の基本構造を示す図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
A preferred embodiment of the present invention will be described in detail. (Embodiment of Pyroelectric Substrate) FIGS. 1 to 6 are views showing a basic structure of a pyroelectric substrate in which a hollow is formed.
【００２６】図１は請求項１，２に対応した実施例Ａを
示すもので、焦電体基板１には、一対の受光部３，３が
形成され、これらの受光部３の各々は、前三方向より取
り囲むようにしてコ字状に形成されたくり抜き孔２によ
って、焦電体基板１で片持ち支持された構造になってい
る。赤外線検知素子としては、いわゆるシングルタイプ
を構成している。FIG. 1 shows an embodiment A according to the first and second aspects of the present invention. A pair of light receiving portions 3 and 3 are formed on a pyroelectric substrate 1, and each of these light receiving portions 3 It has a structure supported by the pyroelectric substrate 1 in a cantilever manner by a hollow hole 2 formed in a U-shape so as to surround the front three directions. As the infrared detecting element, a so-called single type is configured.
【００２７】図では、くり抜き孔２と受光部３との配置
関係のみを示し、一対の受光部３３はプラス、マイナス
に分極させているが、実際の焦電体基板では、図１６や
図１７に示したように、受光部３，３の表、裏には電極
が形成されるとともに、その焦電体基板の両端には出力
端子が形成され、これらは導電パターンで結線される。
そして、このようにして形成された焦電体基板は、後述
するように、ＦＥＴや高抵抗などの回路部品を実装させ
た回路基板との熱的アイソレーションを確保するため、
基板の両端部のみを回路基板の支持部に導電性接着剤で
固着し橋渡状態に支持される。In the drawing, only the arrangement relationship between the hollow 2 and the light receiving portion 3 is shown, and the pair of light receiving portions 33 are polarized positively and negatively. However, in an actual pyroelectric substrate, FIGS. As shown in (1), electrodes are formed on the front and back of the light receiving sections 3 and 3, output terminals are formed on both ends of the pyroelectric substrate, and these are connected by a conductive pattern.
The pyroelectric substrate thus formed is, as described later, to ensure thermal isolation from the circuit board on which circuit components such as FETs and high resistances are mounted.
Only the both ends of the board are fixed to the support portion of the circuit board with a conductive adhesive and supported in a bridge state.
【００２８】焦電型基板１に形成する受光部３の数は、
必要に応じて増大させることもでき、その場合には、図
１８〜図２１に示したように、焦電体基板１の表、裏面
に形成される導電パターン５を種々変更させれば、複数
の受光部３を直列、並列、あるいは直並列に接続するこ
とができ、高抵抗素子ＲとＦＥＴとの組合によって種々
のタイプの赤外線検知素子が製造できる。The number of light receiving sections 3 formed on the pyroelectric substrate 1 is as follows.
If necessary, the conductive pattern 5 formed on the front and back surfaces of the pyroelectric substrate 1 can be variously changed as shown in FIGS. Can be connected in series, parallel, or series-parallel, and various types of infrared detecting elements can be manufactured by combining the high resistance element R and the FET.
【００２９】なお、これらの図の（ａ）は焦電体基板１
上における受光部３とくり抜き孔２の配置を示すもの、
（ｂ），（ｃ）は焦電体基板１上における表面，裏面の
導電パターン５を示すもの、（ｄ）は赤外線検知素子の
電気的な等価回路図を示しており、４は出力端子で、こ
の部分が回路基板の支持部に導電性接着剤で固着され
る。In these figures, (a) shows the pyroelectric substrate 1
Showing the arrangement of the light receiving section 3 and the hollow 2 above,
(B) and (c) show the conductive patterns 5 on the front and back surfaces on the pyroelectric substrate 1, (d) shows an electrical equivalent circuit diagram of the infrared detecting element, and 4 shows an output terminal. This portion is fixed to the support portion of the circuit board with a conductive adhesive.
【００３０】図２は請求項１，３に対応した実施例Ｂを
示すもので、焦電型基板１の対向配置された一対の受光
部３，３は、共通のくり抜き孔２１で取り囲まれるよう
にして片持ち支持された構造になっている。この例も、
いわゆるシングルタイプの赤外線検知素子を構成してい
る。このようなくり抜き孔２１を形成した場合には、各
々の受光部３，３の向い合う部分には基板の一部が存在
しない空間部分が存在するので、図１の例に比べて、熱
ストレスの吸収効果が一層高いものとなる。FIG. 2 shows an embodiment B according to the first and third aspects of the present invention, wherein a pair of light receiving portions 3 and 3 of the pyroelectric substrate 1 which are opposed to each other are surrounded by a common hollow 21. It has a cantilevered structure. This example also
This constitutes a so-called single type infrared detecting element. When the hollow 21 is formed as described above, a space where a part of the substrate does not exist is present at a portion where each of the light receiving portions 3 and 3 is opposed to each other. Has a higher absorption effect.
【００３１】なお、図３は、焦電型基板１を形成した受
光部３を、前三方向より取り囲むくり抜き孔２のコーナ
部の内、外に丸み２ａを設けた例Ａ’（請求項４）を示
している。くり抜き孔２のコーナ部に、このような丸み
２ａを形成すれば、くり抜き孔２の形成時や熱応力を受
けたときでも、コーナ部にクラックを発生しにくくさせ
る効果がある。FIG. 3 shows an example A ′ in which the light receiving portion 3 on which the pyroelectric substrate 1 is formed is provided with roundness 2a inside and outside the corners of the hollowed hole 2 surrounding the light receiving portion 3 from the front three directions. ). If such a roundness 2a is formed in the corner portion of the hollow 2, cracks are less likely to occur in the corner even when the hollow 2 is formed or when thermal stress is applied.
【００３２】また、図４は、図２に示した共通のくり抜
き孔２１を形成した態様の変形例Ｂ’（請求項３）を示
しており、隣接する受光部３同士の間にもくり抜き孔部
２１ａを形成して、より熱応力を吸収しやすくし、かつ
軽量化を図っている。図５，図６は、請求項５〜７に対
応した実施例を示すものである。図５に示した焦電体基
板１は、請求項６において提案したものの一実施例Ｃで
ある。受光部３は、前三方より取り囲むコ字状のくり抜
き孔２によって、焦電体基板１の一部で片持支持された
構造となっており、それぞれのくり抜き孔２の両終端に
は、受光部３の基部（焦電体基板１の受光部３を片持支
持している部分）にくびれを形成するように、逃がし孔
部２Ｃが形成された例Ｃを示している。この例では、デ
ュアルタイプの赤外線検知素子を構成しているが、受光
部３は、その全体的形状が馬蹄形に形成されたくり抜き
孔２によって前三方向から取り囲まれて、焦電体基板１
の一部で片持ち支持された構造になっている。FIG. 4 shows a modified example B '(claim 3) of the embodiment in which the common hollow 21 shown in FIG. 2 is formed. The portion 21a is formed to make it easier to absorb thermal stress and to reduce the weight. 5 and 6 show an embodiment corresponding to claims 5 to 7. FIG. The pyroelectric substrate 1 shown in FIG. 5 is one embodiment C proposed in claim 6. The light receiving section 3 is cantilevered at a part of the pyroelectric substrate 1 by a U-shaped hollow hole 2 surrounding the front three sides. An example C is shown in which an escape hole 2C is formed so as to form a constriction at the base of the portion 3 (the portion that cantileverly supports the light receiving portion 3 of the pyroelectric substrate 1). In this example, a dual-type infrared detecting element is configured, but the light receiving section 3 is surrounded from three front directions by a hollow hole 2 having an overall shape formed in a horseshoe shape.
It has a cantilevered structure at a part of it.
【００３３】図では、くり抜き孔２は受光部３の基部の
内方に湾曲した形状になっているが、コーナ部に丸みを
持たせることはクラックの発生防止上も望ましく採用さ
れる。図６は、請求項７に対応した実施例Ｄを示したも
ので、焦電体基板１には、受光部３を前三方より取り囲
むコ字状のくり抜き孔２を形成しており、それぞれのく
り抜き孔２の両終端部には、くり抜き孔２の孔幅よりも
大きい孔径の逃がし孔部２Ｄを形成している。この例も
デュアルタイプの赤外線検知素子を構成しており、受光
部３は、プラス、マイナスに分極させた状態を想定して
示している。In the figure, the hollow 2 has a curved shape inwardly of the base of the light receiving portion 3, but it is desirable to make the corner rounded to prevent the occurrence of cracks. FIG. 6 shows an embodiment D corresponding to claim 7, wherein the pyroelectric substrate 1 is formed with a U-shaped hollow hole 2 surrounding the light receiving portion 3 from the front three sides. At both ends of the hollow 2, relief holes 2 D having a hole diameter larger than the width of the hollow 2 are formed. This example also constitutes a dual type infrared detecting element, and the light receiving section 3 is shown assuming a state of being polarized positively and negatively.
【００３４】上記した２Ｃ，２Ｄに示した逃がし孔部の
有効性については、後の実験結果において詳述する。 （製造方法）ついで、本願発明の焦電体基板の製造方法
について説明する。本発明に係る焦電型赤外線素子は、
レジストパターンを用いた通常の半導体製造方法により
形成することができる。The effectiveness of the escape holes shown in 2C and 2D will be described in detail in the experimental results later. (Manufacturing Method) Next, a method of manufacturing the pyroelectric substrate of the present invention will be described. Pyroelectric infrared device according to the present invention,
It can be formed by an ordinary semiconductor manufacturing method using a resist pattern.
【００３５】その一例を説明すると、焦電体基板（例え
ば、ＬｉＴａ０3単結晶（厚さ４０μｍ））の表面上
に、所望のレジストパターンをメタルマスクにより形成
し、そのレジストパターンにしたがって、焦電体基板の
表面に、赤外線吸収材料（例えば、ＮｉＣｒ）を所定の
膜厚（赤外線吸収材料として、ＮｉＣｒを用いる場合に
は、膜厚２００〜５００Å）で蒸着させて、電極等の所
定の導電パターンを形成する。焦電体基板の裏上にも、
同様にして、導電パターンを形成する。[0035] To describe an example, pyroelectric substrate (e.g., LiTa0 3 single crystal (thickness 40 [mu] m)) on the surface of, a desired resist pattern is formed by a metal mask, according to the resist pattern, the pyroelectric An infrared-absorbing material (for example, NiCr) is vapor-deposited on the surface of the body substrate in a predetermined thickness (in the case of using NiCr as the infrared-absorbing material, a film thickness of 200 to 500 °) to form a predetermined conductive pattern such as an electrode. To form On the back of the pyroelectric substrate,
Similarly, a conductive pattern is formed.
【００３６】ついで、受光部となる電極を形成した周辺
部分に、例えば、コの字形状のくり抜き孔をサンドブラ
スト加工等により形成する。より具体的には、所定の導
電パターンが形成された焦電体基板の裏面側をガラス等
の平面度の高い基板に固定し、焦電体基板の表面上に、
例えば、感光性ドライフィルムレジスト等の砥粒に対し
て充分に耐性のあるレジストを形成し、フォトリソグラ
フィーにより回路パターンを保護するとともに、受光部
の周辺には、所望のコの字形状の孔部を有するレジスト
パターンを形成する。Next, a U-shaped hollow hole is formed in the peripheral portion where the electrode serving as the light receiving portion is formed, for example, by sandblasting. More specifically, the back surface side of the pyroelectric substrate on which a predetermined conductive pattern is formed is fixed to a substrate having high flatness such as glass, and on the surface of the pyroelectric substrate,
For example, a resist that is sufficiently resistant to abrasive grains such as a photosensitive dry film resist is formed, and the circuit pattern is protected by photolithography, and a desired U-shaped hole is formed around the light receiving portion. Is formed.
【００３７】次に、レジストパターンにしたがって、焦
電体基板に微細な砥粒を一定の圧力で吹き付けて、例え
ば、コの字形状のくり抜き孔を形成する。ここにサンド
ブラスト加工とは、微細な砥粒を一定の圧力で被加工物
に吹き付けることにより、被加工物を切断したり、溝を
開けたりする加工方法であり、くり抜き孔は、サンドブ
ラスト加工以外にも、半導体の製造に一般的に用いられ
るドライエッチング（イオンミリング、ＲＩＥ）法や、
ウエットエッチング法等のエッチング方法を用いて形成
してもよい。Next, fine abrasive grains are sprayed at a constant pressure on the pyroelectric substrate in accordance with the resist pattern to form, for example, a U-shaped hollow. Here, sand blasting is a method of cutting or grooving the workpiece by spraying fine abrasive grains on the workpiece with a constant pressure. The dry etching (ion milling, RIE) method generally used in the manufacture of semiconductors,
It may be formed by using an etching method such as a wet etching method.
【００３８】このような方法で製造される焦電体基板
は、例えば、２．５×５．０ｍｍ程度の小さいものであ
るため、実際には、３インチサイズのＬｉＴａ０3単結
晶（厚さ４０μｍ）ウエハを使用し、フォトリソグラフ
ィー用のメタルマスクに焦電型赤外線素子の回路パター
ンを複数個形成し、３インチサイズのＬｉＴａ０3単結
晶（厚さ４０μｍ）ウエハから一度に数百個が取れるよ
うにしているが、受光部となる電極の大きさを、縦横
が、各々、０．５ｍｍ程度に形成した場合、その周辺に
設けるくり抜き孔の溝の幅は０．１ｍｍ程度に形成され
る。 （実験例１）本発明者らは、前三方向を取り囲むくり抜
き孔を形成して受光部を片持ち支持させた焦電体基板
（本発明の実施例）と、受光部にこのようなくり抜き孔
を形成していない従来例の焦電体基板に加わる応力をシ
ュミレーションによって解析し比較した。The pyroelectric substrate produced in this way, for example, because it is small as about 2.5 × 5.0 mm, in fact, LiTa0 3 single crystal (thickness 40μm 3 inch ) using the wafer, a plurality of circuit patterns of the pyroelectric infrared element in a metal mask for photolithography, three inches LiTa0 3 single crystal (thickness 40μm size) to hundreds at a time from the wafer can be taken However, when the size of the electrode serving as the light receiving portion is about 0.5 mm in each of the vertical and horizontal directions, the width of the groove of the hollow hole provided therearound is formed to be about 0.1 mm. (Experimental Example 1) The inventors of the present invention provided a pyroelectric substrate (embodiment of the present invention) in which hollow holes were formed to surround the three front directions to support the light receiving portion in a cantilever manner, and the hollow light receiving portion was provided with such hollow holes The stress applied to the conventional pyroelectric substrate having no holes was analyzed by simulation and compared.
【００３９】図７（ａ），（ｂ）は、本発明のサンプル
として使用したデュアルタイプの焦電体基板を示してお
り、くり抜き孔２のコーナ部には丸み２ａを形成してい
る。受光部３の電極サイズは、縦横が各々０．５ｍｍ、
くり抜き孔２の幅ｗは０．１ｍｍ、溝の長さＬａは、
０．８５ｍｍとなっている。なお、（ｂ）において示す
台座部４ａは、焦電体基板が回路基板に実装される場合
に、回路基板上に設けられる支持部に相当する部分を示
している。FIGS. 7 (a) and 7 (b) show a dual type pyroelectric substrate used as a sample of the present invention. The electrode size of the light receiving section 3 is 0.5 mm each in the vertical and horizontal directions,
The width w of the hollow 2 is 0.1 mm, and the length La of the groove is
It is 0.85 mm. The pedestal portion 4a shown in (b) indicates a portion corresponding to a supporting portion provided on the circuit board when the pyroelectric substrate is mounted on the circuit board.
【００４０】一方の従来例は、くり抜き孔２を形成して
いない以外は、本発明のサンプルと同様のデュアルタイ
プの形状、寸法のものを使用した。衝撃応力解析は、本
発明、従来例のいずれに対しても、図７（ａ）に示した
ような台座部に取り付けた焦電体基板１を、高さ１．０
ｍから、台座部分が下方になるようにコンクリート床へ
水平に落下させ、その場合に時に生じる重力加速度を５
０００Ｇに想定し、一回目のコンクリート床への衝突時
に、各々の素子を構成する焦電体基板にどのような衝撃
応力が加わるかを計算機を用いた有限要素法によってシ
ミュレーションした。On the other hand, in the conventional example, the same dual type shape and dimensions as those of the sample of the present invention were used except that the hollow 2 was not formed. The impact stress analysis shows that the pyroelectric substrate 1 attached to the pedestal portion as shown in FIG.
m, the pedestal is dropped horizontally on the concrete floor so that the pedestal is at the bottom.
Assuming 000 G, a simulation was performed by a finite element method using a computer to determine what impact stress is applied to the pyroelectric substrate constituting each element at the first collision with the concrete floor.
【００４１】この場合のシュミレーションでは、衝突は
完全弾性衝突と仮定し、焦電体基板１と台座部４ａと
は、Ｘ、Ｙ、Ｚ方向に完全に固定されているものと仮定
した。図８，図９は、それぞれ本発明、従来例における
衝撃応力解析を有限要素法を用いて行ったシミュレーシ
ョン結果を示す応力の等高線図である。両者を対比する
と、くり抜き孔を形成している本発明サンプルでは、受
光部３には応力が殆ど加わっていないのに対し、くり抜
き孔２を形成していない従来例では、受光部に相当する
部分Ｙに応力が集中していることが理解できる。この結
果から、本発明では、焦電体基板１の受光部３を構成す
る部分には応力が加わり難く、その部分に欠陥も発生し
難いことが分かる。In the simulation in this case, it is assumed that the collision is a completely elastic collision, and that the pyroelectric substrate 1 and the pedestal portion 4a are completely fixed in the X, Y, and Z directions. FIG. 8 and FIG. 9 are stress contour diagrams showing simulation results of the impact stress analysis according to the present invention and the conventional example using the finite element method. Comparing the two, in the sample of the present invention in which the hollow hole is formed, almost no stress is applied to the light receiving portion 3, whereas in the conventional example in which the hollow hole 2 is not formed, a portion corresponding to the light receiving portion is provided. It can be understood that stress is concentrated on Y. From this result, it is understood that in the present invention, stress is hardly applied to the portion constituting the light receiving section 3 of the pyroelectric substrate 1, and a defect is hardly generated in the portion.
【００４２】また、落下時の衝撃により発生する応力も
全体的に見れば、本発明のサンプルの方が、従来例のサ
ンプルよりも小さいことが分かる。これも、本発明のサ
ンプルでは、くり抜き孔によって衝撃が緩和されたため
と考えられる。更に、焦電体基板を同じサイズで比較す
ると、本発明のサンプルは、従来例のサンプルに比べ
て、くり抜き孔を設けた分だけ重量も少なくなり、軽量
化が図れることも分かるはずである。Also, when the stress generated by the impact at the time of the drop is viewed as a whole, it can be seen that the sample of the present invention is smaller than the sample of the conventional example. This is also considered to be due to the fact that in the sample of the present invention, the impact was alleviated by the hollow hole. Further, when the pyroelectric substrates are compared with the same size, it can be understood that the sample of the present invention is smaller in weight than the sample of the conventional example because of the provision of the hollow hole, and can be reduced in weight.
【００４３】また、一般に衝撃応力解析においては、Ｘ
方向への衝撃応力は、熱応力の加わる方向と一致するの
で、くり抜き孔を設ければ、熱応力の発生も緩和される
ことも、十分に推察出来る。更に、図８と図９とを対比
すれば、最大応力が発生する部位は、いずれの場合も焦
電体基板１と台座部４ａとの接合部ｆにあることが分か
るが、両者を比較すると、本発明のサンプル方が接合部
ｆに加わる応力が小さくなっていることも理解できる。In general, in impact stress analysis, X
Since the impact stress in the direction coincides with the direction in which the thermal stress is applied, it can be sufficiently inferred that the generation of the thermal stress can be reduced by providing the hollow. Further, comparing FIGS. 8 and 9, it can be seen that the portion where the maximum stress occurs is at the joint f between the pyroelectric substrate 1 and the pedestal portion 4 a in any case. It can also be understood that the sample of the present invention reduces the stress applied to the joint f.
【００４４】また、焦電体基板１の長さＬを変化させ
て、衝撃時に発生する応力をシミュレーションしたとこ
ろ、長さＬを短くすれば、衝撃時に発生する応力も小さ
くなることも分かった。具体的には、焦電体基板の長辺
Ｌを５ｍｍから４．５ｍｍにすると、衝撃時に発生する
最大応力が、１０％以上低減された。更に、受光部の電
極寸法が０．５ｍｍ×０．５ｍｍ程度のものを用いた場
合には、焦電体基板として、２．２ｍｍ×４．５ｍｍ程
度のものが最適なことも分かった。In addition, when the length L of the pyroelectric substrate 1 was changed and the stress generated at the time of impact was simulated, it was found that the shorter the length L, the smaller the stress generated at the time of impact. Specifically, when the long side L of the pyroelectric substrate was changed from 5 mm to 4.5 mm, the maximum stress generated at the time of impact was reduced by 10% or more. Further, it was found that when the electrode size of the light receiving portion was about 0.5 mm × 0.5 mm, a pyroelectric substrate of about 2.2 mm × 4.5 mm was optimal.
【００４５】ついで、焦電体基板における熱影響を熱伝
導有限要素解析により分析した。図１０は、その場合の
本発明のサンプルのシュミレーション解析結果を示すも
のである。一般には、焦電体基板１の長さＬ（図７
（ｂ）参照）を短くすれば、台座部分４ａへの熱拡散が
生じやすくなるため、赤外線検知素子に与える熱影響は
無視できないが、くり抜き孔を形成した本発明のサンプ
ルでは、長さＬが４．５ｍｍのものを用いても、赤外線
検知素子の実用領域としての熱影響には全く問題がない
ことも判明した。Next, the influence of heat on the pyroelectric substrate was analyzed by finite element analysis of heat conduction. FIG. 10 shows a simulation analysis result of the sample of the present invention in that case. Generally, the length L of the pyroelectric substrate 1 (FIG. 7)
If (b) is shortened, thermal diffusion to the pedestal portion 4a is likely to occur, so that the thermal effect on the infrared detecting element cannot be ignored. However, in the sample of the present invention having a hollow hole, the length L is small. It has also been found that there is no problem with the thermal effect as a practical area of the infrared detecting element even when a 4.5 mm one is used.
【００４６】この場合に行った熱伝導有限要素解析で
は、焦電体基板１に設けた４個の受光部３の内の一つの
受光部３Ａに実際に受けると想定される熱量（０．１μ
Ｗ）を与え、焦電体基板１が熱的に定常状態になったと
きの熱分布を求めた。図１０では、熱量を与えた受光部
３Ａを中心とした熱拡散分布は、受光部３Ａから拡散さ
れた熱量のうち、実際上影響のある領域をＸで示してい
るが、焦電体基板１の両端に設けた台座部分４ａを通じ
ての熱の逃げ（熱拡散）は、殆ど影響のないことも分か
る。In the heat conduction finite element analysis performed in this case, the amount of heat (0.1 μm) assumed to be actually received by one of the four light receiving portions 3A of the four light receiving portions 3 provided on the pyroelectric substrate 1 is assumed.
W), the heat distribution when the pyroelectric substrate 1 was thermally in a steady state was determined. In FIG. 10, in the heat diffusion distribution centering on the light receiving unit 3A to which the heat is applied, the area of the heat amount diffused from the light receiving unit 3A that is actually affected is indicated by X, but the pyroelectric substrate 1 It can also be seen that the escape of heat (thermal diffusion) through the pedestal portions 4a provided at both ends of the substrate has almost no effect.
【００４７】このようなシュミレーションの結果から、
本発明のサンプルでは、焦電体基板１の長さＬは、Ｘの
熱分布領域が到達していない部分まで短くすることが可
能であり、この値を求めたところ、長さＬとして、４．
５ｍｍを得た。そして、焦電体基板１を４．５ｍｍの長
さにして試験を行ったところ、赤外線検知素子としての
熱影響も全く問題のないことが判明した。From the results of such a simulation,
In the sample of the present invention, the length L of the pyroelectric substrate 1 can be shortened to a portion where the heat distribution region of X does not reach. .
5 mm was obtained. Then, when a test was performed with the pyroelectric substrate 1 having a length of 4.5 mm, it was found that there was no problem with the thermal influence as an infrared detecting element.
【００４８】最後に、本発明のサンプルと、従来例のサ
ンプルとについて、ポップコンノイズの発生を調べるた
めヒートサイクル試験を行った。このヒートサイクル試
験では、いずれのサンプルも試験室に密閉し、所定の温
度勾配で室温を変化させて、ホップコンノイズの発生を
調べたが、本発明のサンプルは、従来例のものに比べ、
ポップコンノイズの発生が著しく低減されたことが確認
出来た。図１１は、実行したヒートサイクル試験におけ
る室温変化を示している。Ｔ１〜Ｔ４は、いずれも３０
分とした。 （実験例２）ついで、請求項５〜７において提案した本
発明の焦電体基板の有効性を確認するために行った実験
結果について説明する。Finally, a heat cycle test was performed on the sample of the present invention and the sample of the conventional example to examine the occurrence of pop-con noise. In this heat cycle test, all samples were sealed in a test room, the room temperature was changed at a predetermined temperature gradient, and the occurrence of hop connoise was examined.
It was confirmed that the occurrence of pop-con noise was significantly reduced. FIG. 11 shows the change in room temperature in the heat cycle test performed. T1 to T4 are all 30
Minutes. (Experimental Example 2) Next, the results of experiments performed to confirm the effectiveness of the pyroelectric substrate of the present invention proposed in claims 5 to 7 will be described.
【００４９】一般に、焦電体基板においては、温度変化
によって発生する圧縮または引っ張りのストレスがポッ
プコンノイズの原因となっていることが解っている。そ
こで、本出願人は、有限要素法を用いたシミュレーショ
ンと、ヒートサイクル試験を何度も繰り返した結果、ポ
ップコンノイズは、大きな応力が広い範囲で発生する
と、その影響により発生しやすくなることを確認してい
る。In general, it has been found that in a pyroelectric substrate, compression or tensile stress generated by a change in temperature causes pop-con noise. Therefore, the present applicant has conducted simulations using the finite element method and repeated heat cycle tests, and as a result, has confirmed that pop-con noise is more likely to occur due to the effects of large stresses occurring over a wide range. doing.
【００５０】ところが、このような実験を繰り返し行っ
ているうち、温度変化だけでなく、焦電体基板が回路基
板上の支持部に固着支持される場合にズレや誤差などが
あれば、それによって、焦電体基板にはねじれ方向のス
トレスが生じやすくなり、そのときに生じる応力集中に
よって、蓄積された電荷が放出されてホップコンノイズ
を発生することも判明した。However, during the repetition of such an experiment, not only a temperature change but also a deviation or an error in the case where the pyroelectric substrate is fixedly supported by the supporting portion on the circuit board, if there is any It has also been found that stress in the torsion direction is likely to be generated on the pyroelectric substrate, and the concentration of the stress generated at that time releases the accumulated electric charge to generate hop noise.
【００５１】これらの事実をもとにして、実験例１にお
いて示したくり抜き孔を形成したサンプルに、更に回路
実装時の誤差やズレなどの要素を加えて、有限要素解析
を行ったところ、誤差やズレなどがある条件下では、く
り抜き孔の両終端部に大きな応力集中が生じることを知
見し、その部分に孔部を形成すれば、このような応力集
中も有効に吸収できることも同時に知得した。Based on these facts, a finite element analysis was performed on the sample in which the hollow holes shown in Experimental Example 1 were formed, with additional factors such as errors and deviations during circuit mounting. Under the condition that there are gaps and deviations, it was found that large stress concentration occurs at both ends of the hollow hole, and it was also learned that if the hole was formed in that portion, such stress concentration could be effectively absorbed. did.
【００５２】焦電体基板のこのような誤差やズレを考慮
した有限要素法では、焦電体基板は、その両端が回路基
板上で支持されたときに、ねじれ方向の外力を受けるも
のと仮定し、図１２に示したように一方端を持ち上げて
強制変位させた状態を想定し、逃がし孔を形成した本発
明サンプルと、このような逃がし孔がなく、くり抜き孔
のみを形成した実験例１で示したサンプルについて、焦
電体基板に加わる応力をシュミレーションによって解析
し比較した。In the finite element method taking account of such errors and deviations of the pyroelectric substrate, it is assumed that the pyroelectric substrate receives an external force in the torsion direction when both ends are supported on the circuit board. Then, assuming a state where one end is lifted and forcibly displaced as shown in FIG. 12, a sample of the present invention in which a relief hole is formed, and an experimental example 1 in which there is no such a relief hole and only a hollow hole is formed. For the samples indicated by, the stress applied to the pyroelectric substrate was analyzed by simulation and compared.
【００５３】図１３はくり抜き孔のみを形成したサンプ
ルのシュミレーション結果、図１４，図１５はくり抜き
孔の両終端に逃がし孔を形成したサンプル、つまり図１
４は請求項６において提案した形状のサンプルについて
の、図１５は請求項７において提案した形状のサンプル
についてのシュミレーション結果を示している。いずれ
も圧力分布を等高線図として示している。FIG. 13 is a simulation result of a sample in which only a hollow hole is formed, and FIGS. 14 and 15 are samples in which relief holes are formed at both ends of the hollow hole, that is, FIGS.
4 shows a simulation result for a sample having the shape proposed in claim 6, and FIG. 15 shows a simulation result for a sample having the shape proposed in claim 7. In each case, the pressure distribution is shown as a contour map.
【００５４】これらのシュミレーションでは、焦電体基
板に生じる応力は、材料の応力状態を示す最も適当な値
として、破壊の目安となる最大主応力（単位：パスカ
ル）で示してあり、その濃さの度合でその応力値の大き
さを示している。なお、ここで用いた応力単位（パスカ
ル）は、その絶対的な値はほとんど意味をもたず、相対
的な値のみが意味をもつものである。In these simulations, the stress generated in the pyroelectric substrate is represented by the maximum principal stress (unit: Pascal) which is a measure of fracture as the most appropriate value indicating the stress state of the material. Indicates the magnitude of the stress value. Note that the absolute value of the stress unit (Pascal) used here has little meaning, and only the relative value has meaning.
【００５５】図１３〜図１５のいずれの結果において
も、周囲より応力の大きい応力の集中した部分は、くり
抜き孔２で囲まれた受光部３の基部より外方に向かって
分布していることが分かるが、図１４は図１３に比べ
て、応力の大きな部分は減少し、受光部より離れた箇所
に後退しており、受光部に対して応力影響が小さくなっ
ている。更に、図１５では、図１４に比べて、応力の大
きい部分は受光部３より更に外方に後退し、しかも小さ
くなっていることが分かる。In any of the results shown in FIGS. 13 to 15, the portion where the stress having a greater stress than the surroundings is concentrated is distributed outward from the base of the light receiving section 3 surrounded by the hollow 2. As can be seen from FIG. 14, the portion having a large stress is reduced in FIG. 14 and retreated to a position farther from the light receiving portion, and the influence of the stress on the light receiving portion is smaller than in FIG. Further, in FIG. 15, it can be seen that, compared to FIG. 14, the portion where the stress is large retreats further outward than the light receiving unit 3 and is smaller.
【００５６】したがって、このような逃がし孔を形成し
たサンプルでは、くり抜き孔のみを形成したサンプルに
比べて、受光部への応力集中が吸収され、低減されてい
ることが分かる。これらのシュミレーション結果から分
かるように、本出願において提案する逃がし孔部を形成
した焦電体基板によれば、応力集中の低減の度合は、最
大主応力の最大値を比較すると、くり抜き孔部のみを形
成した焦電体基板に比べて、焦電体基板Ｃでは１３％
減、焦電体基板Ｄでは３２％減の低減効果が得られた。Therefore, it can be seen that the sample in which such a relief hole is formed absorbs and reduces the concentration of stress on the light receiving portion as compared with the sample in which only a hollow is formed. As can be seen from these simulation results, according to the pyroelectric substrate in which the relief hole proposed in the present application is formed, the degree of reduction in stress concentration is compared with the maximum value of the maximum main stress. 13% in the pyroelectric substrate C compared to the pyroelectric substrate in which
With the pyroelectric substrate D, a reduction effect of 32% was obtained.
【００５７】また、応力の分布について見ても、くり抜
き孔を形成しただけのものでは、応力の大きな部分が、
コの字形状のくり抜き孔の両先端部に集中しているが、
これに比べて、焦電体基板Ｃでは、受光部より外方に後
退し緩和され、更に焦電体基板Ｄでは、コの字形状のく
り抜き孔の先端部に集中した大きな応力の分布は見られ
ず、くり抜き孔の両終端部に見られる応力分布は、大き
さの平均値にして、およそ５０％以上低減するという飛
躍的な効果を得ている。Further, regarding the distribution of the stress, if only the hollow hole is formed, the portion where the stress is large is
It is concentrated at both ends of the U-shaped hollow hole,
On the other hand, the pyroelectric substrate C recedes outward from the light receiving portion and is relaxed, and the pyroelectric substrate D does not show a large stress distribution concentrated at the tip of the U-shaped hollow hole. However, a remarkable effect is obtained in that the stress distribution seen at both end portions of the hollow hole is reduced by about 50% or more as an average value of the size.
【００５８】また、ポップコンノイズの発生率は、大き
な応力が広い範囲に発生する場合に大きいので、このよ
うな逃がし孔によって応力集中が低減されることによ
り、ポップコンノイズの発生も抑制できることも予測さ
れ、このことも、図１１に示すヒートサイクル実験を行
い、確認することができた。Since the occurrence rate of pop-con noise is large when a large stress is generated in a wide range, it is expected that the occurrence of pop-con noise can be suppressed by reducing the stress concentration by such relief holes. This was also confirmed by conducting a heat cycle experiment shown in FIG.
【００５９】[0059]
【発明の効果】請求項１〜４において提案された本発明
に係る焦電型赤外線検知素子によれば、受光部の周囲に
くり抜き孔を形成して、受光部を焦電体基板の一部で片
持ち支持される構造としているので、焦電体基板を温度
変化させたときに生じるストレスがくり抜き孔で吸収さ
れ、受光部に加わることがない。したがって、受光部に
応力が集中することがないので、ポップコンノイズの発
生を著しく低減出来る。According to the pyroelectric infrared detecting element of the present invention proposed in claims 1 to 4, a hollow is formed around the light receiving portion, and the light receiving portion is formed as a part of the pyroelectric substrate. In this structure, the stress generated when the temperature of the pyroelectric substrate is changed is absorbed by the hollow hole, and is not applied to the light receiving portion. Therefore, since stress is not concentrated on the light receiving portion, generation of pop-con noise can be significantly reduced.
【００６０】また、請求項５〜７において提案された本
発明に係る焦電型赤外線検知素子によれば、受光部の周
囲に形成したくり抜き孔の両終端に逃がし孔を形成付加
しているので、焦電体基板の実装時にズレや誤差を生じ
たものであっても、温度変化を加えたときに発生するね
じれ方向のストレスを受光部に加わえることなく、有効
に吸収するので、ポップコンノイズの発生を著しく低減
出来る。Further, according to the pyroelectric infrared detecting element according to the present invention proposed in claims 5 to 7, escape holes are formed and added at both ends of the hollow hole formed around the light receiving portion. Even if there is a deviation or error when mounting the pyroelectric substrate, the stress in the torsional direction that occurs when a temperature change is applied is effectively absorbed without applying to the light receiving part, so that pop noise Can be significantly reduced.
【００６１】請求項８は、くり抜き孔を形成するのにサ
ンドブラスト加工を用いたもので、効率よく、高い精度
で所望のくり抜き孔、逃がし孔を得ることができる。更
に、請求項９において提案された本発明の赤外線センサ
によれば、請求項１〜８において提案された焦電型赤外
線検知素子を用いているので、ホップコンノイズの発生
を著しく軽減させた信頼性の高い赤外線センサが提供で
きる。According to an eighth aspect of the present invention, a sandblasting process is used to form a hollow, and a desired hollow and relief hole can be obtained efficiently and with high accuracy. Furthermore, according to the infrared sensor of the present invention proposed in claim 9, since the pyroelectric infrared detecting element proposed in claims 1 to 8 is used, the reliability of hop-con noise is significantly reduced. A highly reliable infrared sensor can be provided.
【図１】本発明に係る焦電型赤外線検知素子の一実施例
（請求項１，２）を示す図。FIG. 1 is a diagram showing an embodiment (claims 1 and 2) of a pyroelectric infrared detecting element according to the present invention.
【図２】本発明に係る焦電型赤外線検知素子の他例（請
求項３）を示す図。FIG. 2 is a diagram showing another example (claim 3) of the pyroelectric infrared detecting element according to the present invention.
【図３】本発明に係る焦電型赤外線検知素子の他例（請
求項４）を示す図。FIG. 3 is a diagram showing another example (claim 4) of the pyroelectric infrared detecting element according to the present invention.
【図４】本発明に係る焦電型赤外線検知素子の他例（請
求項３）を示す図。FIG. 4 is a view showing another example (claim 3) of the pyroelectric infrared detecting element according to the present invention.
【図５】本発明に係る焦電型赤外線検知素子の他例（請
求項５，６）を示す図。FIG. 5 is a view showing another example (claims 5 and 6) of the pyroelectric infrared detecting element according to the present invention.
【図６】本発明に係る焦電型赤外線検知素子の他例（請
求項５，７）を示す図。FIG. 6 is a view showing another example (claims 5 and 7) of the pyroelectric infrared detecting element according to the present invention.
【図７】本発明のサンプルとして、衝撃応力解析に用い
た焦電体基板を説明する図。FIG. 7 is a diagram illustrating a pyroelectric substrate used for impact stress analysis as a sample of the present invention.
【図８】本発明サンプルについて、有限要素法を用いて
シュミレーションした結果の衝撃応力解析図。FIG. 8 is an impact stress analysis diagram obtained by simulating the sample of the present invention using the finite element method.
【図９】従来例について、有限要素法を用いてシュミレ
ーションした結果の衝撃応力解析図。FIG. 9 is an impact stress analysis diagram obtained by simulating the conventional example using the finite element method.
【図１０】本発明サンプルについて、熱伝導有限要素法
を用いてシュミレーションした結果の解析図。FIG. 10 is an analysis diagram of a simulation result of the sample of the present invention using the heat conduction finite element method.
【図１１】ポップコンノイズ評価試験に使用されるヒー
トサイクル試験の説明図。FIG. 11 is an explanatory diagram of a heat cycle test used for a pop-con noise evaluation test.
【図１２】焦電体基板の実装時における位置ズレなどの
誤差を考慮するため、有限要素解析法において想定した
強制変位の説明図。FIG. 12 is an explanatory diagram of a forced displacement assumed in a finite element analysis method in order to consider an error such as a positional shift when mounting a pyroelectric substrate.
【図１３】従来例について、実装時における位置ズレな
どの誤差を考慮した条件下において、有限要素法を用い
てシュミレーションした結果の解析図。FIG. 13 is an analysis diagram of a result of a simulation using a finite element method under a condition in which an error such as a position shift at the time of mounting is considered in a conventional example.
【図１４】本発明サンプルについて、実装時における位
置ズレなどの誤差を考慮した条件下において、有限要素
法を用いてシュミレーションした結果の解析図。FIG. 14 is an analysis diagram of a result of a simulation of the sample of the present invention using a finite element method under a condition in which an error such as a position shift at the time of mounting is considered.
【図１５】本発明の別のサンプルについて、実装時にお
ける位置ズレなどの誤差を考慮した条件下において、有
限要素法を用いてシュミレーションした結果の解析図。FIG. 15 is an analysis diagram of a result obtained by simulating another sample of the present invention by using a finite element method under a condition in which an error such as a displacement at the time of mounting is considered.
【図１６】本発明の焦電型赤外線検知素子の一例を導電
パターン、等価回路をもって示す図。FIG. 16 is a diagram showing an example of a pyroelectric infrared detecting element of the present invention with a conductive pattern and an equivalent circuit.
【図１７】本発明の焦電型赤外線検知素子の一例を導電
パターン、等価回路をもって示す図。FIG. 17 is a diagram showing an example of a pyroelectric infrared detecting element of the present invention with a conductive pattern and an equivalent circuit.
【図１８】本発明の焦電型赤外線検知素子の一例を導電
パターン、等価回路をもって示す図。FIG. 18 is a diagram showing an example of a pyroelectric infrared detecting element of the present invention with a conductive pattern and an equivalent circuit.
【図１９】本発明の焦電型赤外線検知素子の一例を導電
パターン、等価回路をもって示す図。FIG. 19 is a diagram showing an example of a pyroelectric infrared detecting element of the present invention with a conductive pattern and an equivalent circuit.
【図２０】本発明の焦電型赤外線検知素子の一例を導電
パターン、等価回路をもって示す図。FIG. 20 is a diagram showing an example of a pyroelectric infrared detecting element of the present invention with a conductive pattern and an equivalent circuit.
【図２１】本発明の焦電型赤外線検知素子の一例を導電
パターン、等価回路をもって示す図。FIG. 21 is a diagram showing an example of a pyroelectric infrared detecting element of the present invention with a conductive pattern and an equivalent circuit.
【図２２】焦電型赤外線検知素子を利用した赤外線セン
サの概略構成を示す分解斜視図である。FIG. 22 is an exploded perspective view showing a schematic configuration of an infrared sensor using a pyroelectric infrared detecting element.
【図２３】従来の焦電型赤外線検知素子を説明する図で
ある。FIG. 23 is a diagram illustrating a conventional pyroelectric infrared detecting element.
【図２４】焦電型赤外線検知素子を回路基板に取り付け
た状態を示す説明図である。FIG. 24 is an explanatory diagram showing a state in which a pyroelectric infrared detecting element is mounted on a circuit board.
【図２５】焦電型赤外線検知素子に熱的変化を加えた場
合に焦電体基板に発生する圧縮または引っ張りのストレ
スを示す説明図である。FIG. 25 is an explanatory diagram showing compression or tensile stress generated in the pyroelectric substrate when a thermal change is applied to the pyroelectric infrared detecting element.
Ａ、Ａ’Ｂ、Ｂ’Ｃ、Ｄ・・・焦電型赤外線検知素子 １・・・焦電体基板 ２、２１・・・くり抜き孔 ２Ｃ、２Ｄ・・・逃がし孔部 ２ａ・・・コーナ部の丸み加工された部分 ３・・・受光部 ３１，３２・・・上、下電極 ４・・・出力端子 A, A'B, B'C, D: Pyroelectric infrared detecting element 1: Pyroelectric substrate 2, 21: hollow hole 2C, 2D: escape hole 2a: corner Part rounded part 3 ... light receiving part 31, 32 ... upper and lower electrodes 4 ... output terminal
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松嶋 朝明 大阪府門真市大字門真1048番地 松下電工 株式会社内 (72)発明者 柳生 博之 大阪府門真市大字門真1048番地 松下電工 株式会社内 (72)発明者 松村 吉浩 大阪府門真市大字門真1048番地 松下電工 株式会社内 (72)発明者 入部 恭輔 大阪府門真市大字門真1048番地 松下電工 株式会社内 (72)発明者 堀内 和弘 愛知県尾張旭市三郷町角田1123 株式会社 山寿セラミックス内 (72)発明者 大橋 秀樹 愛知県尾張旭市三郷町角田1123 株式会社 山寿セラミックス内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Asamatsu Matsushima 1048 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Works, Ltd. Inventor Yoshihiro Matsumura 1048 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Works Co., Ltd. Kadota 1123 Yamaju Ceramics Co., Ltd.
Claims (9)
を形成して受光部となし、その受光部に赤外線を入射さ
せて電荷を生じさせる構成とした焦電型赤外線検知素子
において、 上記受光部は、その前三方向を取り囲むくり抜き孔によ
って、上記焦電体基板の一部で片持ち支持された構造と
している焦電型赤外線検知素子。1. A pyroelectric infrared ray comprising a pair of upper and lower electrodes formed on the front and rear surfaces of a pyroelectric substrate to form a light receiving section, and an infrared ray is incident on the light receiving section to generate electric charges. The pyroelectric infrared detecting element, wherein the light receiving portion is cantilevered at a part of the pyroelectric substrate by hollowed holes surrounding the front three directions.
れており、各々の受光部は、上記焦基板内部に向かって
略コ字状に張り出すくり抜き孔で取り囲まれるようにし
て片持ち支持された構造としている請求項１に記載の焦
電型赤外線検知素子。2. A plurality of light receiving portions are arranged on the pyroelectric substrate, and each of the light receiving portions is surrounded by a hollow hole projecting substantially in a U shape toward the inside of the pyroelectric substrate. 2. The pyroelectric infrared detecting element according to claim 1, wherein the pyroelectric infrared detecting element has a cantilevered structure.
置されており、これらの受光部は、焦電体基板の内方に
向かって張り出す共通のくり抜き孔で取り囲まれるよう
にして片持ち支持された構造としている請求項１に記載
の焦電型赤外線検知素子。3. A plurality of light receiving portions are disposed opposite to each other on the pyroelectric substrate, and these light receiving portions are surrounded by a common hollow hole extending inward of the pyroelectric substrate. 2. The pyroelectric infrared detecting element according to claim 1, wherein the element is cantilevered.
施している請求項１から３のいずれかに記載の焦電型赤
外線検知素子。4. The pyroelectric infrared detecting element according to claim 1, wherein the hollow has a rounded corner.
赤外線検知素子において、 上記くり抜き孔は、上記焦電体基板の一部で片持ち支持
された上記受光部の基部にくびれを形成する形状にして
いることを特徴とする焦電型赤外線検知素子。5. A pyroelectric infrared detecting element according to claim 1, wherein said hollow hole is narrowed at a base of said light receiving portion which is cantilevered by a part of said pyroelectric substrate. A pyroelectric infrared detection element characterized by having a shape that forms
くり抜き孔は、その全体的形状が馬蹄形に形成されてい
る焦電型赤外線検知素子。6. A pyroelectric infrared detecting element according to claim 5, wherein said hollow hole surrounding said light receiving portion is formed in a horseshoe shape as a whole.
の両終端において、そのくり抜き孔の孔幅よりも大きい
直径の円形の逃がし孔部を付加した形状にしている焦電
型赤外線検知素子。7. A pyroelectric infrared detecting element according to claim 5, wherein said hollow hole has a shape in which a circular relief hole having a diameter larger than the width of said hollow hole is added at both ends.
は、サンドブラスト加工によって形成されたものである
焦電型赤外線検知素子。8. A pyroelectric infrared detecting element according to claim 1, wherein said hollow hole is formed by sandblasting.
を、信号処理部を構成する回路部品を実装した回路基板
に設けた支持部に固着して、回路基板上に橋渡し状態に
支持させた構造とした焦電型赤外線センサ。9. Both ends of the pyroelectric substrate according to claim 1 are fixed to a supporting portion provided on a circuit board on which circuit components constituting a signal processing section are mounted, and are bridged on the circuit board. Pyroelectric infrared sensor with a structure supported in a state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03225497A JP3372180B2 (en) | 1996-04-15 | 1997-02-17 | Pyroelectric infrared detector and pyroelectric infrared sensor |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-118406 | 1996-04-15 | ||
| JP11840696 | 1996-04-15 | ||
| JP03225497A JP3372180B2 (en) | 1996-04-15 | 1997-02-17 | Pyroelectric infrared detector and pyroelectric infrared sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH102793A true JPH102793A (en) | 1998-01-06 |
| JP3372180B2 JP3372180B2 (en) | 2003-01-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03225497A Expired - Lifetime JP3372180B2 (en) | 1996-04-15 | 1997-02-17 | Pyroelectric infrared detector and pyroelectric infrared sensor |
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Cited By (12)
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| JPH11237279A (en) * | 1998-02-19 | 1999-08-31 | Matsushita Electric Works Ltd | Pyroelectric infrared detection element |
| JPH11248540A (en) * | 1998-02-27 | 1999-09-17 | Matsushita Electric Works Ltd | Pyroelectric infrared detection element |
| EP1028466A1 (en) * | 1999-02-09 | 2000-08-16 | STMicroelectronics S.r.l. | Method for manufacturing integrated devices including electromechanical microstructures, without residual stress |
| WO2001047004A1 (en) * | 1999-12-22 | 2001-06-28 | Matsushita Electric Works, Ltd. | Method for fabricating device chips from thin sheet of pyroelectric material |
| JP2001235364A (en) * | 1999-12-17 | 2001-08-31 | Matsushita Electric Works Ltd | Pyroelectric element for detecting infra-red rays |
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| JPH11248540A (en) * | 1998-02-27 | 1999-09-17 | Matsushita Electric Works Ltd | Pyroelectric infrared detection element |
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