JPH10275833A - Pulse heater and manufacture of semiconductor chip-mount board - Google Patents
Pulse heater and manufacture of semiconductor chip-mount boardInfo
- Publication number
- JPH10275833A JPH10275833A JP9081320A JP8132097A JPH10275833A JP H10275833 A JPH10275833 A JP H10275833A JP 9081320 A JP9081320 A JP 9081320A JP 8132097 A JP8132097 A JP 8132097A JP H10275833 A JPH10275833 A JP H10275833A
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- heater
- semiconductor chip
- silicon carbide
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/755—Cooling means
- H01L2224/75502—Cooling means in the upper part of the bonding apparatus, e.g. in the bonding head
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は急速な昇温及び降温
が可能なパルスヒーターに関し、特に、半導体の組み立
て工程において使用される、半導体チップ実装ボード製
造用のパルスヒーター（ボンダー用ヒーター）に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pulse heater capable of rapidly raising and lowering the temperature, and more particularly to a pulse heater (bonder heater) for manufacturing a semiconductor chip mounting board used in a semiconductor assembly process.
【０００２】[0002]
【従来の技術】半導体の組み立て工程において、半導体
チップ実装ボードを製造するために種々のヒーターが用
いられている。現在の通信機やパーソナルコンピュータ
の小型化、薄型化、高性能化への要求が高まるなか、新
しいボンディング技術が求められている。その中でも特
に、ＩＣチップ等の半導体チップを基板に実装するため
の新しいボンディング技術として、フリップチップボン
ドと呼ばれるワイヤーレスボンディング方法が注目され
ており、従来のワイヤーボンディング方法と比較して大
幅にＩＣの実装効率（ＩＣチップ面積／ＩＣパッケージ
面積）を向上させるさせることができると言う利点があ
る。2. Description of the Related Art In a semiconductor assembling process, various heaters are used to manufacture a semiconductor chip mounting board. As demands for miniaturization, thinning, and high performance of current communication devices and personal computers increase, new bonding techniques are required. Among them, a wireless bonding method called flip chip bonding has attracted attention as a new bonding technology for mounting a semiconductor chip such as an IC chip on a substrate. There is an advantage that mounting efficiency (IC chip area / IC package area) can be improved.
【０００３】この方法はＩＣチップ内の配線部と基板と
の間にハンダバンプや金バンプ等の導電性ボンディング
材を置き、ヒーターにより前記材料を加熱溶融してＩＣ
チップと基板とをボンディングするものである。そし
て、金バンプが存在するボンディング部分全体を加熱に
より急速に昇温（例えば常温から４５０℃まで２秒間で
昇温）して導電性ボンディング材を熱溶融させ、そして
ボンディング部分を冷却により急速に降温（例えば４５
０℃から１００℃まで１０秒で降温）して導電性ボンデ
ィング材を固化させることが可能なパルスヒ−ターを必
要とする。この急速昇降温はＩＣチップ等を熱から保護
するためにも必要である。このようなパルスヒーター
（以下、ヒーターと言うことがある）の発熱体として、
従来、モリブデンやチタン、ニッケルクロム合金、窒化
アルミニウムに白金パラジウム膜を焼き付けたものが用
いられていた。According to this method, a conductive bonding material such as a solder bump or a gold bump is placed between a wiring portion in an IC chip and a substrate, and the material is heated and melted by a heater to form an IC.
This is for bonding the chip and the substrate. Then, the entire bonding portion where the gold bump is present is rapidly heated (for example, the temperature is raised from room temperature to 450 ° C. in 2 seconds) by heating to melt the conductive bonding material, and the bonding portion is rapidly cooled by cooling. (For example, 45
It requires a pulse heater capable of solidifying the conductive bonding material by lowering the temperature from 0 ° C. to 100 ° C. in 10 seconds). This rapid temperature rise and fall is necessary to protect the IC chip and the like from heat. As a heating element of such a pulse heater (hereinafter sometimes referred to as a heater),
Heretofore, molybdenum, titanium, nickel chromium alloy, aluminum nitride, and a platinum-palladium film baked have been used.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、モリブ
デンやチタンを発熱体として用いたヒ−ターにあって
は、電気比抵抗が非常に低いために急速昇温時に大電流
を必要とし、そのために誘導磁場が発生し、正確な位置
合わせを必要とするヒーターの位置を狂わせてしまう虞
があった。また、またヒーター部分は約４５０℃まで加
熱されるために酸化されやすく耐久性がなく、更に金属
製であるため高温での塑性変形が大きく、数μｍ程度の
表面精度を確保できないという問題点があった。また、
ニッケルクロム合金を用いたヒーターにあっては、モリ
プデンやチタンを用いたヒーターと比較すると、耐酸化
性は若干良くなるものの、熱伝導率が低いために均熱性
が非常に悪く、ボンディングの接続不良が起こりやすく
製品としての歩留まりが上がらない。更に、熱伝導率が
低いため、急速昇温時に必要な最大投入電力が大きく、
また降温に要する時間がかかり、１回のボンディング処
理に多くの時間を要し、コストパフォ−マンスが低下す
る他、金属製であるため高温での塑性変形が大きく、数
μｍ程度の表面精度を確保できないという問題点があっ
た。However, a heater using molybdenum or titanium as a heating element requires a large current at the time of rapid temperature rise because of its extremely low electric resistivity. There is a possibility that a magnetic field is generated and the position of a heater that requires accurate alignment is shifted. In addition, the heater portion is heated to about 450 ° C., so it is easily oxidized and has no durability. Further, since the heater portion is made of metal, plastic deformation at a high temperature is large, and the surface accuracy of about several μm cannot be secured. there were. Also,
Compared to heaters using molybdenum or titanium, heaters using nickel-chromium alloy have slightly better oxidation resistance, but have poor thermal conductivity, resulting in extremely poor uniformity and poor connection of bonding. Is likely to occur and the yield as a product does not increase. Furthermore, since the thermal conductivity is low, the maximum input power required during rapid temperature rise is large,
In addition, it takes a long time to lower the temperature, and it takes a lot of time for one bonding process. In addition to lowering the cost performance, since it is made of metal, plastic deformation at high temperatures is large, and surface accuracy of about several μm is required. There was a problem that it could not be secured.
【０００５】また、窒化アルミニウムに白金パラジウム
膜を焼き付けてなるヒーターにあっては、白金パラジウ
ム薄膜の電気抵抗を大きくするために膜厚を薄くしてあ
り、そのために昇温時に断線が起こりやすく、均熱性も
非常に悪くボンディング部分に接続不良が起こりやす
く、製品としての歩留まりが上がらないうえ、断線がい
つ発生するか予測できず、信頼性に劣るという問題点が
あった。Further, in a heater in which a platinum-palladium film is baked on aluminum nitride, the film thickness is reduced in order to increase the electric resistance of the platinum-palladium thin film. The heat uniformity is also very poor, and a connection failure is likely to occur at the bonding portion, so that the yield as a product does not increase, and when disconnection cannot be predicted, there is a problem that reliability is poor.
【０００６】本発明は上記事情に鑑みてなされたもので
あって、その課題は、急速な昇降温が可能であり、ヒー
ターヘッドの位置ずれが起こる虞がなく、ヒーター断線
の虞がなく、十分な表面精度を有し、ボンディング部分
の接続不良がなく、コストパフォーマンスに優れたパル
スヒーター及び半導体チップ実装ボードの製法を提供す
ることにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is an object of the present invention to rapidly raise and lower the temperature, to prevent the heater head from being displaced, and to prevent the heater from being disconnected. It is an object of the present invention to provide a pulse heater and a method for manufacturing a semiconductor chip mounting board having excellent surface accuracy, no connection failure at a bonding portion, and excellent cost performance.
【０００７】[0007]
【課題を解決するための手段】かかる課題は、発熱体
と、該発熱体に通電して発熱体を昇温させるための電極
と、発熱体を冷却して降温させるための冷却孔と、発熱
体からの熱を断熱するためのベース材とを備え、前記発
熱体が炭化珪素から構成されているとともに、発熱体が
昇温と降温とを繰り返すパルスヒーターとすることで解
決される。The object of the present invention is to provide a heating element, an electrode for energizing the heating element to raise the temperature of the heating element, a cooling hole for cooling the heating element to lower the temperature, and This problem is solved by providing a base material for insulating heat from the body, the heating element being made of silicon carbide, and the heating element being a pulse heater that repeats a temperature rise and a temperature fall.
【０００８】[0008]
【発明の実施の形態】以下、本発明を詳細に説明する。
図１は、本発明に係わるパルスヒーターの一実施形態例
の平面図であって、図２は図１に示すパルスヒーターの
要部に沿って階段状に切断した断面図であり、図３は、
図１及び図２に示すパルスヒーターに用いられている発
熱体の斜視図である。図１〜図３に示すパルスヒーター
１０は、発熱体１と、該発熱体１に通電して発熱体１を
昇温させるための電極４と、発熱体１を強制冷却して降
温させるための冷却孔８などの冷却手段と、発熱体１か
らの熱を断熱するために発熱体１の片面側に設けられた
電気絶縁性のベース材２とを備え、発熱体１が炭化珪素
から構成されているとともに、発熱体１とベース材２が
半導体チップを吸着するための吸着孔７ａを有し、前記
冷却孔８が前記ベース材２に形成され、発熱体１が昇温
と降温とを交互に繰り返すものである。そして、図１及
び図２に示す例では、複数個（４個）の冷却孔８はベー
ス材２を貫通する貫通孔として形成され、吸着孔７ａは
ベース材２と発熱体１とを貫通している。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.
FIG. 1 is a plan view of one embodiment of a pulse heater according to the present invention, FIG. 2 is a cross-sectional view cut in a stepwise manner along a main part of the pulse heater shown in FIG. 1, and FIG. ,
FIG. 3 is a perspective view of a heating element used in the pulse heater shown in FIGS. 1 and 2. The pulse heater 10 shown in FIGS. 1 to 3 includes a heating element 1, an electrode 4 for energizing the heating element 1 to raise the temperature of the heating element 1, and for forcibly cooling the heating element 1 to lower the temperature. A cooling means such as a cooling hole 8 and an electrically insulating base material 2 provided on one side of the heating element 1 to insulate heat from the heating element 1 are provided, and the heating element 1 is made of silicon carbide. In addition, the heating element 1 and the base member 2 have an adsorption hole 7a for adsorbing the semiconductor chip, the cooling hole 8 is formed in the base member 2, and the heating element 1 alternates between heating and cooling. Is to repeat. In the example shown in FIGS. 1 and 2, a plurality of (four) cooling holes 8 are formed as through holes penetrating the base member 2, and the suction holes 7 a penetrate the base member 2 and the heating element 1. ing.
【０００９】本発明者等は、鋭意検討した結果、炭化珪
素、特に燒結体密度が２．５ｇ／ｃｍ3以上で室温（２
５゜Ｃ）での電気比抵抗が１〜１００Ω・ｃｍである炭
化珪素燒結体により発熱体を構成させれば前述の課題を
解決できるパルスヒーターが得られることを知見した。
焼結体密度が２．５ｇ／ｃｍ3以上であれば炭化珪素粒
子間の結合力が充分であり、高温での機械強度も高いこ
とから、ボンディング時の荷重により発熱体が破損する
虞がなく、高温時での塑性変形がなく数μｍの表面精度
が容易に得られる。なお、炭化珪素の理論密度は３．２
１ｇ／ｃｍ3である。The present inventors have conducted intensive studies and as a result, have found that silicon carbide, in particular, a sintered body having a density of 2.5 g / cm 3 or more and a room temperature (2%).
It has been found that a pulse heater capable of solving the above-mentioned problems can be obtained by forming a heating element from a silicon carbide sintered body having an electric resistivity at 5 ° C. of 1 to 100 Ω · cm.
If the sintered body density is 2.5 g / cm 3 or more, the bonding force between the silicon carbide particles is sufficient and the mechanical strength at high temperatures is high, so that there is no risk of the heating element being damaged by the load during bonding. The surface accuracy of several μm can be easily obtained without plastic deformation at high temperatures. Note that the theoretical density of silicon carbide is 3.2
It is 1 g / cm 3 .
【００１０】また、炭化珪素燒結体の室温での電気比抵
抗は１〜１００Ω・ｃｍであることが望ましい。このよ
うな電気比抵抗であれば、金属ヒーターのように大電流
が流れないので、リード線３に電磁誘導からくる応力が
働いてヒーターヘッドの位置が狂う虞がない。The electrical resistivity of the sintered silicon carbide at room temperature is preferably 1 to 100 Ω · cm. With such an electric resistivity, since a large current does not flow unlike a metal heater, there is no possibility that the stress from electromagnetic induction acts on the lead wire 3 and the position of the heater head is disturbed.
【００１１】これに対して、室温での電気比抵抗が１Ω
・ｃｍ未満であると、急速昇温するために大電力を投入
することが必要となり、大電流が流れてリード線に電磁
誘導からくる応力が働きヒーターヘッドの位置が狂う虞
がある他、大電流が発熱体に集中してヒーターが破損
し、また所定の抵抗値とするためには発熱体を薄肉化し
なければならず、ボンディング時の圧力（通常５０Ｋｇ
／ｃｍ2程度）により破損する虞がある。一方、室温で
の電気比抵抗が１００Ω・ｃｍを超えると大電圧を投入
しなければならず、このために特別の電源が必要となる
ためである。On the other hand, the electrical resistivity at room temperature is 1Ω.
If it is less than cm, it is necessary to apply a large amount of electric power in order to rapidly raise the temperature. When the current is concentrated on the heating element, the heating element is damaged, and the heating element must be thinned in order to obtain a predetermined resistance value.
/ Cm 2 ). On the other hand, if the electrical resistivity at room temperature exceeds 100 Ω · cm, a large voltage must be applied, which requires a special power supply.
【００１２】更に、発熱体を形成する炭化珪素焼結体は
室温での熱伝導率が１０ＯＷ／ｍ・Ｋ以上であることが
好ましい。上述したように発熱体を形成する炭化珪素焼
結体の焼結密度は２．５ｇ／ｃｍ3以上と緻密質であ
り、しかも後述するように焼結助剤無添加で焼結できる
ので、粒界に存在する不純物が少なく微細で均一な組織
が得られ、よって１０ＯＷ／ｍ・Ｋ以上の高い熱伝導率
が得られる。従って、この炭化珪素焼結体から成る発熱
体を備えたパルスヒーターは均熱性に優れたものとな
り、ボンディング部分の接続不良がなく製品歩留まりが
高くなり、更に冷却に要する時間が短く１回のボンディ
ング処理時間が短縮されコストパフォーマンスが高くな
る他、急速昇温時又は急速降温時においても熱衝撃で破
損する虞がない。Further, the silicon carbide sintered body forming the heating element preferably has a thermal conductivity at room temperature of 10 OW / m · K or more. As described above, the sintered density of the silicon carbide sintered body forming the heating element is as dense as 2.5 g / cm 3 or more, and can be sintered without adding a sintering aid as described later. A fine and uniform structure with few impurities present in the field is obtained, and thus a high thermal conductivity of 10 OW / mK or more is obtained. Therefore, the pulse heater provided with the heating element made of the silicon carbide sintered body has excellent heat uniformity, has no defective connection at the bonding portion, increases the product yield, and has a short cooling time, and requires only one bonding operation. In addition to shortening the processing time and improving the cost performance, there is no possibility of damage due to thermal shock even during rapid temperature rise or rapid temperature decrease.
【００１３】燒結体密度２．５ｇ／ｃｍ3以上で電気比
抵抗１〜１００Ω・ｃｍである炭化珪素燒結体は、平均
粒径０．１〜１０μｍの第１の炭化珪素粉末と０．１μ
ｍ以下の第２の炭化珪素粉末とを混合し、これを燒結す
る方法により得られる。この方法によれば、１〜１００
Ω・ｃｍの範囲の電気比抵抗を示す炭化珪素を得ること
が容易である。このような炭化珪素燒結体の製造方法
は、特開平４ー６５３６１号公報に開示されているが、
本発明においては電気比抵抗が１〜１００Ω・ｃｍと大
きいものを用いることが望ましい。前記特性を有する炭
化珪素燒結体を製造するために、平均粒径が０．１〜１
０μｍの第１の炭化珪素粉末と平均粒径が０．１μｍ以
下の第２の炭化珪素微粉末とを用意する。ここで、第１
の炭化珪素粉末としては、一般に使用されているもので
よく、例えばシリカ還元法、アチソン法等の方法によっ
て製造されたものが用いられ、その結晶相としては非晶
質、α型、β型のいすれであってもよいが、電気比抵抗
値を１〜１００Ω・ｃｍに調整する容易さからはα型の
ものが好適である。[0013] A silicon carbide sintered body having a sintered body density of 2.5 g / cm 3 or more and an electric resistivity of 1 to 100 Ω · cm is composed of a first silicon carbide powder having an average particle size of 0.1 to 10 µm and 0.1 µm.
m or less of the second silicon carbide powder and obtained by sintering. According to this method, 1 to 100
It is easy to obtain silicon carbide having an electrical resistivity in the range of Ω · cm. A method for manufacturing such a silicon carbide sintered body is disclosed in Japanese Patent Application Laid-Open No. 4-65361.
In the present invention, it is desirable to use a material having a large electrical resistivity of 1 to 100 Ω · cm. In order to produce a silicon carbide sintered body having the above characteristics, the average particle size is 0.1 to 1
A first silicon carbide powder of 0 μm and a second silicon carbide fine powder having an average particle diameter of 0.1 μm or less are prepared. Here, the first
As the silicon carbide powder, generally used ones may be used, for example, those produced by a method such as a silica reduction method or an Acheson method are used, and the crystal phase thereof is amorphous, α-type, β-type. Any type may be used, but the α-type is preferable from the viewpoint of easy adjustment of the electric resistivity to 1 to 100 Ω · cm.
【００１４】第２の炭化珪素粉末としては、非酸化性雰
囲気のプラズマ中にシラン化合物またはハロゲン化珪素
と炭化水素とからなる原料ガスを導入し、反応系の圧力
を１気圧未満から０．ｌトルの範囲で制御しつつ気相反
応させることによって得られたのを使用する。結晶相と
しては非晶質、α型、β型のいずれであってもよい。こ
のようにして得られた炭化珪素微粉末は焼結性が非常に
優れているために、上記第１の炭化珪素粉末と混合する
のみで、焼結助剤を添加することなく高純度かつ緻密質
の炭化珪素焼結体を得ることができるようになる。As the second silicon carbide powder, a raw material gas comprising a silane compound or a silicon halide and a hydrocarbon is introduced into plasma in a non-oxidizing atmosphere, and the pressure of the reaction system is reduced from less than 1 atm to 0.1. The product obtained by performing a gas phase reaction while controlling in the range of 1 torr is used. The crystalline phase may be amorphous, α-type, or β-type. The silicon carbide fine powder obtained in this way has very excellent sinterability, so that it is only mixed with the first silicon carbide powder, and has high purity and high density without adding a sintering aid. Quality sintered silicon carbide can be obtained.
【００１５】次に、上記第１の炭化珪素粉末と第２の炭
化珪素粉末とを混合して混合物とする。混合比率は所定
の電気比低抗値（１〜１００Ω・ｃｍ）となるよう予め
予備実験で求めておく。その後、上記混合物を所望の形
状に成形し、得られた成形体を１８００〜２４００℃の
温度で焼結して焼結体を得て、これを発熱体とする。焼
結方法、焼結時の雰囲気はいずれも制限されない。Next, the first silicon carbide powder and the second silicon carbide powder are mixed to form a mixture. The mixing ratio is determined in advance by a preliminary experiment so as to have a predetermined low electric resistance (1 to 100 Ω · cm). Thereafter, the mixture is molded into a desired shape, and the obtained molded body is sintered at a temperature of 1800 to 2400 ° C. to obtain a sintered body, which is used as a heating element. Neither the sintering method nor the atmosphere during sintering is limited.
【００１６】本発明のパルスヒーターには、断熱性と電
気絶縁性とを有するベース材２が前記発熱体と組み合わ
されて設けられことが好ましい。このようなベース材は
セラミックスから構成されることが望ましい。セラミッ
クスとして、窒化珪素（Ｓｉ 3Ｎ4）、カルシウムシリケ
ート（ＣａＯ・ＳｉＯ2）、サイアロン等を例示するこ
とができる。ベース材を発熱体の片面側に接して設けれ
ば、発熱体の昇温時における熱逃げが少なく、小さな投
入電力での急速昇温が可能となり、またパルスヒーター
を取り付けた金属部への熱逃げも少なくなるために、金
属部の熱膨張によるヒーターの位置ずれも少ない。ま
た、発熱体が機械的に補強され、ボンディング時の荷重
により破損することがない。The pulse heater of the present invention has a heat insulating property and an electric power.
A base material 2 having air insulating properties is combined with the heating element.
It is preferable to be provided. Such a base material
It is desirable to be composed of ceramics. Ceramic
Silicon nitride (Si) ThreeNFour), Calcium silique
(CaO / SiO)Two), Sialon, etc.
Can be. The base material is provided in contact with one side of the heating element.
If the heating element has a small
Rapid heating with input power is possible, and pulse heater
To reduce heat escape to the metal part with
There is little displacement of the heater due to thermal expansion of the metal part. Ma
In addition, the heating element is mechanically reinforced,
No damage due to
【００１７】２組以上の電極をパルスヒーターに設ける
ことが好ましい。例えば、図１に示すように電極を２組
（左右の各々に２個ずつの電極）設けると、電流は２本
のリード線３、３に分かれて２個の電極４、４から発熱
体１の左右方向に分散して流れる。従って、電極を２組
以上有する発熱体１の発熱温度分布は、電極が１組の場
合と比較して均一となり、発熱体１の熱衝撃による破損
が起こりにくい。Preferably, two or more sets of electrodes are provided on the pulse heater. For example, as shown in FIG. 1, when two sets of electrodes (two electrodes on each of the right and left sides) are provided, the current is divided into two lead wires 3 and 3 and the heating element 1 Flows in the horizontal direction. Therefore, the heat generation temperature distribution of the heating element 1 having two or more sets of electrodes is more uniform than that of one set of electrodes, and the heating element 1 is less likely to be damaged by thermal shock.
【００１８】次に、本発明に係わるパルスヒーターを用
いて、半導体チップ実装ボードを製造する方法について
説明する。図４は、パルスヒーターを用いて半導体チッ
プ実装ボードを製造する方法を説明するための側面図で
あり、図５は、得られた半導体チップ実装ボードを示す
断面図である。半導体チップ実装ボードの製造のため
に、発熱体１の上に、図４に示すように、伝熱板９を更
に設けたパルスヒーターを用意する。そして、半導体チ
ップ２０と、該半導体チップ２０と基板２２との間に配
置された導電性ボンディング材２１と、基板２２とを、
前記伝熱板９を介して発熱体１により加熱し加圧して導
電性ボンディング材２１を溶融し、次いで発熱体１を冷
却して導電性ボンディング材２１を固化させることによ
り、半導体チップ２０と基板２２とを導電性ボンディン
グ材２１によりボンディングする方法である。なお、導
電性ボンディング材２１は基板２２の上に予め設けられ
ている。Next, a method of manufacturing a semiconductor chip mounting board using the pulse heater according to the present invention will be described. FIG. 4 is a side view for explaining a method of manufacturing a semiconductor chip mounting board using a pulse heater, and FIG. 5 is a sectional view showing the obtained semiconductor chip mounting board. In order to manufacture a semiconductor chip mounting board, a pulse heater further provided with a heat transfer plate 9 on the heating element 1 as shown in FIG. 4 is prepared. Then, the semiconductor chip 20, the conductive bonding material 21 disposed between the semiconductor chip 20 and the substrate 22, and the substrate 22
The semiconductor chip 20 and the substrate are heated and heated by the heating element 1 via the heat transfer plate 9 to melt the conductive bonding material 21 by pressurizing and then cooling the heating element 1 to solidify the conductive bonding material 21. 22 is bonded by a conductive bonding material 21. The conductive bonding material 21 is provided on the substrate 22 in advance.
【００１９】パルスヒーターを用いて半導体チップ実装
ボードを製造する方法を更に詳細に説明する。半導体チ
ップ等の被ボンディング材を吸着するための吸着孔を持
っている伝熱板９を発熱体１の下面に取り付けたパルス
ヒーターを用いることが望ましい。この伝熱板９は発熱
体１の熱を半導体チップ２０、導電性ボンディング材２
１、基板２２に均一に伝熱するためのものである。伝熱
板９は伝熱性、耐熱性、熱衝撃性に優れていることが必
要であって、例えば、窒化アルミニウム（ＡｌＮ）等の
セラミック製であることが好ましい。A method of manufacturing a semiconductor chip mounting board using a pulse heater will be described in more detail. It is desirable to use a pulse heater in which a heat transfer plate 9 having a suction hole for sucking a material to be bonded such as a semiconductor chip is attached to the lower surface of the heating element 1. The heat transfer plate 9 transfers the heat of the heating element 1 to the semiconductor chip 20 and the conductive bonding material 2.
1. To uniformly transfer heat to the substrate 22. The heat transfer plate 9 needs to be excellent in heat transfer, heat resistance, and thermal shock resistance, and is preferably made of, for example, a ceramic such as aluminum nitride (AlN).
【００２０】伝熱板９が設けられたパルスヒーターを半
導体チップ２０の上に重ねて、パルスヒーターの吸着孔
７ａと、該吸着孔７ａに連通する伝熱板９の吸着孔とを
真空引きして伝熱板９の下面上に半導体チップ２０を吸
着する。次いで、半導体チップ２０を吸着したパルスヒ
ーターは、基板２２の所望位置に移動させられる。The pulse heater provided with the heat transfer plate 9 is overlaid on the semiconductor chip 20, and the suction holes 7a of the pulse heater and the suction holes of the heat transfer plate 9 communicating with the suction holes 7a are evacuated. Thus, the semiconductor chip 20 is sucked on the lower surface of the heat transfer plate 9. Next, the pulse heater that has absorbed the semiconductor chip 20 is moved to a desired position on the substrate 22.
【００２１】基板２２の上にパルスヒーターを重ねた
後、通電して発熱体１を発熱させるとももに、ベース材
２の上面に圧力を加えて、半導体チップ２０、導電性ボ
ンディング材２１、基板２２とを加熱加圧する。この加
熱により、導電性ボンディング材２１は発熱体１からの
熱により数秒で溶融する。この急速加熱のために、半導
体チップ２０、基板２２は過熱から保護される。次い
で、発熱体１を数秒で急速冷却する。この急速冷却によ
って導電性ボンディング材２１は数秒で固化する。この
急速冷却は、半導体チップ２０、基板２２を過熱から保
護すると共に、１サイクルのボンディング処理時間を短
縮するために必要である。発熱体１の急速冷却は、冷却
孔８より発熱体１の表面に高圧の圧縮空気等を吹きかけ
るなどにより行う。次いで、半導体チップ２０等への加
圧を止め、また、吸着孔７ａと伝熱板９の吸着孔とに空
気を供給して半導体チップ２０の真空引きを止め、パル
スヒーターを半導体チップ２０の表面から離脱させる。
その結果、導電性ボンディング材２１を介して半導体チ
ップ２０と基板２２とがボンディングされた半導体チッ
プ実装ボードが得られる。以上によりパルスヒーターは
１サイクルのボンディング処理を終り、次のボンディン
グ処理サイクルに移って、前記のボンディング処理を繰
り返す。After the pulse heater is superimposed on the substrate 22, the heater is energized to generate heat, and a pressure is applied to the upper surface of the base material 2 so that the semiconductor chip 20, the conductive bonding material 21, the substrate 22 is heated and pressurized. By this heating, the conductive bonding material 21 is melted in a few seconds by the heat from the heating element 1. Due to this rapid heating, the semiconductor chip 20 and the substrate 22 are protected from overheating. Next, the heating element 1 is rapidly cooled in a few seconds. This rapid cooling solidifies the conductive bonding material 21 in a few seconds. This rapid cooling is necessary to protect the semiconductor chip 20 and the substrate 22 from overheating and to shorten the bonding processing time of one cycle. The rapid cooling of the heating element 1 is performed by blowing high-pressure compressed air or the like onto the surface of the heating element 1 from the cooling holes 8. Next, the pressurization of the semiconductor chip 20 and the like is stopped, and air is supplied to the suction holes 7a and the suction holes of the heat transfer plate 9 to stop the evacuation of the semiconductor chip 20. Let go.
As a result, a semiconductor chip mounting board in which the semiconductor chip 20 and the substrate 22 are bonded via the conductive bonding material 21 is obtained. As described above, the pulse heater completes one cycle of the bonding process, moves to the next bonding process cycle, and repeats the above bonding process.
【００２２】導電性ボンディング材２１として、ハンダ
バンプ、金バンプ等が挙げられる。このようなボンディ
ング材は加熱によって溶融し、冷却によって固化する性
質を持っている。Examples of the conductive bonding material 21 include solder bumps, gold bumps, and the like. Such a bonding material has a property of melting by heating and solidifying by cooling.
【００２３】発熱体１を急速昇降温させる為に、発熱体
１の熱容量は小さいことが好ましい。従って、発熱体１
のヒーター面の厚みｔ1（図３に図示）は、約１〜３ｍ
ｍであることが好ましい。In order to rapidly raise and lower the temperature of the heating element 1, it is preferable that the heat capacity of the heating element 1 is small. Therefore, the heating element 1
The heater surface thickness t 1 (shown in FIG. 3) is about 1 to 3 m
m is preferable.
【００２４】[0024]
【実施例】以下、本発明を理解しやすくするために、実
施例について説明する。 ー実施例ー パルスヒーターの発熱体を次のようにして製造した。四
塩化珪素とエチレンとを原料ガスとし、プラズマＣＶＤ
法により、平均粒径０．０１μｍ、ＢＥＴ比表面積９６
ｍ2／ｇの非晶質炭化珪素超微粉末を得た。この炭化珪
素超微粉末５重量％と市販のα型炭化珪素粉末（平均粒
径０．７μｍ、ＢＥＴ比表面積１３ｍ2／ｇ）９５重量
％とを、メタノール中に分散させ、さらにボールミルで
１２時間混合した。次いで、この混合物を乾燥し、成
形、ホットプレス燒結した。燒結条件は、アルゴン雰囲
気下で、燒結温度２２００゜Ｃ、プレス圧４００ｋｇ／
ｍ2で、９０分間であった。燒結体の密度は３．１ｇ／
ｍ3、室温での電気比抵抗は、３Ω・ｃｍ（４端子
法）、室温での熱伝導率が１６５Ｗ／ｍＫ（レーザーフ
ラッシュ法）の燒結体を得た。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to make the present invention easier to understand, embodiments will be described below. -Example-A heating element of the pulse heater was manufactured as follows. Plasma CVD using silicon tetrachloride and ethylene as source gases
The average particle size is 0.01 μm and the BET specific surface area is 96
An ultrafine amorphous silicon carbide powder of m 2 / g was obtained. 5% by weight of this ultra-fine silicon carbide powder and 95% by weight of a commercially available α-type silicon carbide powder (average particle size: 0.7 μm, BET specific surface area: 13 m 2 / g) are dispersed in methanol, and further subjected to ball milling for 12 hours. Mixed. Next, this mixture was dried, molded, and hot-press sintered. The sintering conditions were as follows: sintering temperature 2200 ° C, press pressure 400 kg /
m 2 , 90 minutes. The density of the sintered body is 3.1 g /
m 3, the electrical resistivity at room temperature, 3Ω · cm (4-terminal method), thermal conductivity at room temperature to obtain a sintered body of 165 W / mK (laser flash method).
【００２５】次に、前記炭化珪素燒結体を加工すること
により、図３に示すように、半導体チップを吸着するた
めの吸着孔（直径２ｍｍ）７ａと、伝熱板９を吸着する
ための吸着孔７ｂと凸状に形成されたヒーター面とを有
し、炭化珪素燒結体から成る発熱体１を得た。該発熱体
１は、図３に示すように、その両側にベース材２に締結
するための袖部を有し、該袖部には締結孔５ａと電極取
付孔４ａが形成されたものであった。なお、吸着孔７
ａ、７ｂはベース材２と発熱体１を貫通している。発熱
体１のヒーター面の大きさは２７×２７ｍｍであり、そ
の厚みｔ1は１．５ｍｍであった。Next, by processing the silicon carbide sintered body, as shown in FIG. 3, suction holes (diameter: 2 mm) 7a for sucking the semiconductor chips and suction holes for sucking the heat transfer plate 9 are formed. Heating element 1 having holes 7b and a convexly formed heater surface and made of a sintered silicon carbide was obtained. As shown in FIG. 3, the heating element 1 has sleeves on both sides for fastening to the base material 2, and has a fastening hole 5a and an electrode mounting hole 4a formed in the sleeve. Was. The suction holes 7
Reference numerals a and 7b penetrate the base member 2 and the heating element 1. The size of the heater surface of the heating element 1 was 27 × 27 mm, and its thickness t 1 was 1.5 mm.
【００２６】図１、２に示すように、前記発熱体１の上
面に、断熱性が高く、耐熱衝撃に優れた窒化珪素燒結体
をベース材２として重ねた。なお、ベース材２は発熱体
１を冷却するための冷却孔８を貫通孔として備えたもの
であった。そして、締結孔５ａにＭ３ボルトを挿通し
て、ベース材２と発熱体１とを締結した。また、電極取
付孔４ａにＭ２ボルト４ｂを挿通し、該ボルト４ｂの先
端付近にリード線３の端部をナットにより固定すること
により電極４を形成した。電極４は左右２カ所ずつにニ
ッケル製リード線３を接続することにより２組とした。
その結果、図１、２に示す構造を有する本発明に係わる
パルスヒーターが得られた。As shown in FIGS. 1 and 2, a silicon nitride sintered body having high heat insulating properties and excellent thermal shock resistance was laminated on the upper surface of the heating element 1 as a base material 2. The base member 2 had a cooling hole 8 for cooling the heating element 1 as a through hole. Then, an M3 bolt was inserted into the fastening hole 5a to fasten the base member 2 and the heating element 1 together. The electrode 4 was formed by inserting an M2 bolt 4b into the electrode mounting hole 4a and fixing the end of the lead wire 3 near the tip of the bolt 4b with a nut. The electrodes 4 were formed into two sets by connecting nickel lead wires 3 at two locations on the left and right.
As a result, a pulse heater according to the present invention having the structure shown in FIGS. 1 and 2 was obtained.
【００２７】該パルスヒーターの性能を、急速昇温試
験、ヒーター面の均熱性試験、急速冷却試験により試験
した。これらの試験は、３相、ＡＣ２００Ｖ、３０アン
ペアを通電できる電源に、端子Ａ、Ｂを接続し、図６に
示すように、ヒーター面に取り付けたＫ熱電対６で測定
した温度で制御して行った。The performance of the pulse heater was tested by a rapid temperature rise test, a uniform heating test on the heater surface, and a rapid cooling test. In these tests, terminals A and B were connected to a power supply capable of supplying three-phase, 200 VAC, 30 amps, and controlled at a temperature measured by a K thermocouple 6 attached to the heater surface as shown in FIG. went.
【００２８】ー急速昇温試験ー 図７に示すように、最大投入電力量を８００〜１６５０
Ｗの範囲で変えた時の、２秒間で常温（２５゜Ｃ）から
昇温できる温度（ヒーター面温度）を測定した。その結
果を図７に示した。その結果、本発明に係わるパルスヒ
ーターの発熱体１は、図７に示すように、１７５０Ｗの
投入電力により、常温から４５０゜Ｃまで２秒で昇温で
きることが判った。則ち、本発明に係わるパルスヒータ
ーは急速昇温性に優れた。-Rapid temperature rise test- As shown in FIG.
When the temperature was changed in the range of W, the temperature (heater surface temperature) at which the temperature could be raised from room temperature (25 ° C.) in 2 seconds was measured. The result is shown in FIG. As a result, as shown in FIG. 7, it was found that the heating element 1 of the pulse heater according to the present invention could be heated from normal temperature to 450 ° C. in 2 seconds with 1750 W of input power. That is, the pulse heater according to the present invention was excellent in rapid temperature rise.
【００２９】ーヒーター面の均熱性試験ー 常温から２秒間で４５０゜Ｃまで昇温できる電流を発熱
体１に流し、４５０゜Ｃに５秒間保持した時のヒーター
面の温度分布をサーモビュアにより詳細に測定した。ま
た、比較のため、白金パラジュームを焼き付けたＡｌＮ
から成る発熱体を有するヒーター（比較例１）とニッケ
ルクロム合金（ＳＵＳ）製の発熱体を有するヒーター
（比較例２）についても同じ条件でヒーター面の温度分
布を測定した。ヒーター面の温度測定位置（ａ）〜
（ｉ）を図６に示し、その測定位置における温度の測定
結果を表１に示す。-Heat uniformity test on heater surface-A current capable of raising the temperature from normal temperature to 450 ° C in 2 seconds is passed through the heating element 1, and the temperature distribution on the heater surface when the temperature is maintained at 450 ° C for 5 seconds is measured in detail with a thermoviewer. It was measured. For comparison, AlN with platinum palladium baked
The temperature distribution on the heater surface was measured under the same conditions for a heater having a heating element composed of the above (Comparative Example 1) and a heater having a heating element made of nickel-chromium alloy (SUS) (Comparative Example 2). Temperature measurement position on heater surface (a)-
FIG. 6 shows (i), and Table 1 shows the measurement results of the temperatures at the measurement positions.
【００３０】ー急速冷却試験ー 常温から４５０゜Ｃまで２秒間でヒーター面を昇温し、
４５０゜Ｃに１０秒間保持した。次いで、コンプレッサ
ーにて圧縮した高圧の空気を発熱体１の上面に冷却孔８
から吹き付けた。この時の空気吹き付け量は９０リット
ル／分であった。この降温条件下で、ヒーター面を１０
０゜Ｃまで冷却するに要する冷却時間を測定した。比較
のため、前記比較例１と前記比較例２のヒーターについ
ても、同じ条件で冷却時間を測定した。その結果を表１
に併せ示す。-Rapid cooling test-The temperature of the heater surface was raised from normal temperature to 450 ° C for 2 seconds,
It was kept at 450 ° C. for 10 seconds. Next, the high-pressure air compressed by the compressor is cooled on the upper surface of the heating element 1 by the cooling holes 8.
Sprayed from. The air blowing rate at this time was 90 l / min. Under this cooling condition, the heater surface is
The cooling time required to cool to 0 ° C was measured. For comparison, the cooling times of the heaters of Comparative Example 1 and Comparative Example 2 were measured under the same conditions. Table 1 shows the results.
Are shown together.
【００３１】[0031]
【表１】 [Table 1]
【００３２】表１に示すように、ヒーター面の均熱性試
験において、比較例１、２のヒーターは、その面内での
温度むら（ΔＴ）が５４゜Ｃ、９７゜Ｃであった。これ
に対して、実施例のヒーターのヒーター面内の温度むら
（ΔＴ）はわずかに５゜Ｃであった。則ち、実施例のヒ
ーターは、比較例１、２のヒーターと比較して、ヒータ
ー面内の温度分布の均一性に優れた。また、表１に示す
ように、急速冷却試験において、比較例１、２のヒータ
ーは１００゜Ｃまで冷却するのに２４、７８秒を要し
た。これに対して、実施例のヒーターは、わずかに９秒
で４５０゜Ｃから１００゜Ｃまで降温できた。則ち、実
施例のヒーターは、比較例１、２のヒーターと比較し
て、熱応答性が早く、急速降温ができることが判った。As shown in Table 1, in the heat uniformity test on the heater surface, the heaters of Comparative Examples 1 and 2 exhibited in-plane temperature unevenness (ΔT) of 54 ° C. and 97 ° C. On the other hand, the temperature unevenness (ΔT) in the heater surface of the heater of the example was only 5 ° C. That is, the heaters of the examples were superior to the heaters of comparative examples 1 and 2 in the uniformity of the temperature distribution in the heater surface. Further, as shown in Table 1, in the rapid cooling test, the heaters of Comparative Examples 1 and 2 required 24 and 78 seconds to cool down to 100 ° C. In contrast, the heater of the example was able to decrease the temperature from 450 ° C. to 100 ° C. in only 9 seconds. That is, it was found that the heaters of the examples had faster thermal responsiveness than the heaters of Comparative Examples 1 and 2, and were able to rapidly decrease the temperature.
【００３３】前記の実施例のヒーターの発熱体１の下面
に、図４に示すように、吸着孔７ｂを利用して伝熱板９
を吸着により取り付けたパルスヒーターを用意した。こ
のパルスヒーターは、急速昇温性、急速降温性、均熱性
に優れるために、ＬＳＩチップを基板にボンディングす
るために好適に用いることができた。そして、得られた
半導体チップ実装ボードは、ヒーターヘッドの位置ずれ
等によって生じる接続不良を有さなかった。従って、こ
の半導体チップボンディング用パルスヒーターはコスト
パフォーマンスに優れた。また、長期使用によっても、
発熱体は破損しなかった。As shown in FIG. 4, the heat transfer plate 9 is provided on the lower surface of the heating element 1 of the heater of the above-described embodiment by utilizing the suction holes 7b.
Was prepared by using a pulse heater attached by suction. Since this pulse heater was excellent in rapid temperature rising property, rapid temperature decreasing property, and heat uniformity, it could be suitably used for bonding an LSI chip to a substrate. The obtained semiconductor chip mounting board did not have a connection failure caused by a displacement of the heater head or the like. Therefore, this pulse heater for semiconductor chip bonding is excellent in cost performance. Also, even with long-term use,
The heating element was not damaged.
【００３４】[0034]
【発明の効果】以上説明したように、本発明に係わるパ
ルスヒーター及び半導体チップ実装ボードの製法によれ
ば次の効果が得られる。 （１）炭化珪素より成る発熱体は、熱伝導率が非常に良
いので熱応答性が早く、短時間に熱的平衡に達する。そ
のため、ヒーターの均熱性が非常に良くなり、ボンディ
ングによる接続不良が大幅に低減される。結果的にコス
トパフォーマンスに非常に優れる。また、容易に急速昇
降温が可能なので、半導体チップを基板にボンディング
させるためのヒーターとして好適である。 （２）発熱体が熱衝撃により破損することがないので、
耐久性に優れたヒーターである。 （３）炭化珪素の比抵抗を適切な値とすることができる
ので、金属ヒーターのように大電流が流れない。従っ
て、リード線に電磁誘導からくる応力が働き、ヒーター
ヘッドの位置が狂う心配がないので、製品の歩留まりが
大幅に向上する。また、特殊な電源を必要としないの
で、装置としてのコストが低減できる。As described above, according to the pulse heater and the semiconductor chip mounting board manufacturing method of the present invention, the following effects can be obtained. (1) The heating element made of silicon carbide has a very good thermal conductivity and therefore has a quick thermal response and reaches thermal equilibrium in a short time. Therefore, the uniformity of the heater becomes very good, and the connection failure due to bonding is greatly reduced. As a result, it is very excellent in cost performance. Further, since the temperature can be quickly raised and lowered easily, it is suitable as a heater for bonding a semiconductor chip to a substrate. (2) Since the heating element is not damaged by thermal shock,
It is a heater with excellent durability. (3) Since the specific resistance of silicon carbide can be set to an appropriate value, a large current does not flow unlike a metal heater. Therefore, the stress from the electromagnetic induction acts on the lead wire, and there is no fear that the position of the heater head is out of order, so that the yield of the product is greatly improved. Further, since a special power supply is not required, the cost as an apparatus can be reduced.
【図１】 本発明に係わるパルスヒーターの一実施形態
例を説明する平面図である。FIG. 1 is a plan view illustrating an embodiment of a pulse heater according to the present invention.
【図２】 図１に示すパルスヒーターを階段状に切断し
た断面図である。FIG. 2 is a cross-sectional view of the pulse heater shown in FIG.
【図３】 図１に示すパルスヒーターの発熱体を説明す
る斜視図である。FIG. 3 is a perspective view illustrating a heating element of the pulse heater shown in FIG.
【図４】 本発明に係わる半導体チップ実装ボードの製
法を説明するための側面図である。FIG. 4 is a side view for explaining a method of manufacturing a semiconductor chip mounting board according to the present invention.
【図５】 半導体チップ実装ボードの断面図である。FIG. 5 is a sectional view of a semiconductor chip mounting board.
【図６】 発熱体表面の温度測定位置を示す図である。FIG. 6 is a diagram showing a temperature measurement position on the surface of a heating element.
【図７】 最大投入電力と２秒後のヒーター温度との関
係を示すグラフである。FIG. 7 is a graph showing the relationship between the maximum input power and the heater temperature after 2 seconds.
１・・発熱体、２・・ベース材、３・・リード線、４・
・電極、４ａ・・電極取付孔、４ｂ・・電極取付ボル
ト、５ａ・・締結孔、５ｂ・・締結ボルト、５ｃ・・締
結ナット、６・・熱電対、７ａ・・半導体チップ吸着用
吸着孔、７ｂ・・伝熱板吸着用吸着孔、８・・冷却孔、
９・・伝熱板、１０・・パルスヒーター、２０・・半導
体チップ、２１・・導電性ボンディング材、２２・・基
板、３０・・受圧板1. Heating element, 2. Base material, 3. Lead wire, 4.
· Electrode, 4a ··· Electrode mounting hole, 4b ··· Electrode mounting bolt, 5a ··· Fastening hole, 5b ··· Fastening bolt, 5c ··· Fastening nut, 6 ··· Thermocouple, 7a ··· Suction hole for semiconductor chip suction , 7b · · · suction holes for heat transfer plate suction, 8 · · · cooling holes,
9 heat transfer plate, 10 pulse heater, 20 semiconductor chip, 21 conductive bonding material, 22 substrate, 30 pressure receiving plate
Claims (4)
昇温させるための電極と、発熱体を降温させるための冷
却孔と、発熱体からの熱を断熱するためのベース材とを
備え、前記発熱体が炭化珪素から構成されているととも
に、発熱体が昇温と降温とを繰り返すことを特徴とする
パルスヒーター。1. A heating element, an electrode for energizing the heating element to raise the temperature of the heating element, a cooling hole for lowering the temperature of the heating element, and a base material for insulating heat from the heating element. Wherein the heating element is made of silicon carbide, and the heating element repeatedly rises and falls in temperature.
温での電気比抵抗が１〜１００Ω・ｃｍである炭化珪素
燒結体から構成されている発熱体を備えていることを特
徴とするパルスヒーター。2. A heating element comprising a silicon carbide sintered body having a sintered body density of 2.5 g / cm 3 or more and an electric resistivity at room temperature of 1 to 100 Ω · cm. Pulse heater.
第１の炭化珪素粉末と０．１μｍ以下の第２の炭化珪素
粉末とを混合し、これを燒結して得た炭化珪素燒結体を
用いて構成されていることを特徴とする請求項１又は２
記載のパルスヒーター。3. A silicon carbide obtained by mixing a first silicon carbide powder having an average particle diameter of 0.1 to 10 μm and a second silicon carbide powder having an average particle diameter of 0.1 μm or less and sintering the mixture. 3. The structure according to claim 1, wherein the structure is formed using a sintered body.
The pulse heater as described.
の上に伝熱板を設け、半導体チップと、該半導体チップ
と基板との間に配置された導電性ボンディング材と、基
板とを前記伝熱板を介して発熱体により加熱し加圧する
ことにより、半導体チップと基板とを導電性ボンディン
グ材によりボンディングすることを特徴とする半導体チ
ップ実装ボードの製法。4. A heat transfer plate is provided on a heating element of the pulse heater according to claim 1, wherein the semiconductor chip, a conductive bonding material disposed between the semiconductor chip and the substrate, and the substrate are connected to each other. A method for manufacturing a semiconductor chip mounting board, wherein a semiconductor chip and a substrate are bonded by a conductive bonding material by heating and pressurizing by a heating element via a heat transfer plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08132097A JP3255871B2 (en) | 1997-03-31 | 1997-03-31 | Manufacturing method of pulse heater and semiconductor chip mounting board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08132097A JP3255871B2 (en) | 1997-03-31 | 1997-03-31 | Manufacturing method of pulse heater and semiconductor chip mounting board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10275833A true JPH10275833A (en) | 1998-10-13 |
| JP3255871B2 JP3255871B2 (en) | 2002-02-12 |
Family
ID=13743116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08132097A Expired - Lifetime JP3255871B2 (en) | 1997-03-31 | 1997-03-31 | Manufacturing method of pulse heater and semiconductor chip mounting board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3255871B2 (en) |
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|---|---|---|---|---|
| JP2001076902A (en) * | 1999-09-03 | 2001-03-23 | Sumitomo Osaka Cement Co Ltd | Snubber resistor and manufacture thereof |
| DE10125577B4 (en) * | 2000-05-25 | 2010-09-16 | Kyocera Corp. | Contactor heater |
| US10350692B2 (en) | 2012-07-20 | 2019-07-16 | Shinkawa Ltd. | Heater for bonding apparatus and method of cooling the same |
| JP2014022629A (en) * | 2012-07-20 | 2014-02-03 | Shinkawa Ltd | Heater for bonding apparatus and method for cooling the same |
| US9406640B2 (en) | 2012-12-21 | 2016-08-02 | Shinkawa Ltd. | Flip chip bonder and method of correcting flatness and deformation amount of bonding stage |
| WO2014141514A1 (en) * | 2013-03-12 | 2014-09-18 | 株式会社新川 | Flip chip bonder and flip chip bonding method |
| CN104335336A (en) * | 2013-03-12 | 2015-02-04 | 株式会社新川 | Flip Chip Bonder And Flip Chip Bonding Method |
| JP5675008B1 (en) * | 2013-03-12 | 2015-02-25 | 株式会社新川 | Flip chip bonder and flip chip bonding method |
| US9536856B2 (en) | 2013-03-12 | 2017-01-03 | Shinkawa Ltd. | Flip chip bonder and flip chip bonding method |
| CN104335336B (en) * | 2013-03-12 | 2017-03-15 | 株式会社新川 | Chip bonding device and chip bonding method |
| JP2015165602A (en) * | 2015-06-25 | 2015-09-17 | 株式会社新川 | Heater for bonding apparatus and method for cooling the same |
| JP2016149567A (en) * | 2016-03-29 | 2016-08-18 | 株式会社新川 | Heater for bonding device, heater assembly for bonding device, and bonding device |
| WO2022144997A1 (en) * | 2020-12-28 | 2022-07-07 | 株式会社新川 | Mounting head |
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