JPH10270967A - Manufacture of crystal vibrator - Google Patents

Manufacture of crystal vibrator

Info

Publication number
JPH10270967A
JPH10270967A JP7422797A JP7422797A JPH10270967A JP H10270967 A JPH10270967 A JP H10270967A JP 7422797 A JP7422797 A JP 7422797A JP 7422797 A JP7422797 A JP 7422797A JP H10270967 A JPH10270967 A JP H10270967A
Authority
JP
Japan
Prior art keywords
crystal
wafer
etching
film
corrosion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP7422797A
Other languages
Japanese (ja)
Inventor
Katsumi Suzuki
克己 鈴木
Tsuyoshi Sunakawa
強志 砂川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP7422797A priority Critical patent/JPH10270967A/en
Publication of JPH10270967A publication Critical patent/JPH10270967A/en
Withdrawn legal-status Critical Current

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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain the manufacture of a crystal vibrator in which yield and quality of the crystal vibrator are improved, a load of alignment of a photo mask by a worker is relieved and the manufacture cost of the photo mask is reduced. SOLUTION: A transparent corrosion proof film 201 is formed on the front and rear sides of a crystal wafer 100 by sputtering. Then a photosensing resist 102 is coated to a front side and a rear side of the crystal wafer 100. Then a photo mask 103 is placed on one side to expose 106 the photosensing resist 102. Succeedingly the wafer is immersed in a phosphoric acid water solution for etching to form a prescribed pattern. The crystal wafer 100 is immersed in an HF water solution to be etched to obtain a prescribed pattern. Finally the wafer is immersed in an acetone to remove the photosensing resist 102 and immersed in the phosphoric acid water solution to exfoliate and remove the transparent corrosion proof film 201.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、信号発振器やコン
ピュータクロックなどに利用される、水晶ウェハをエッ
チングして、水晶振動子形状を形成する水晶振動子の製
造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a crystal resonator, which is used for a signal oscillator, a computer clock, or the like, which forms a crystal resonator by etching a crystal wafer.

【0002】[0002]

【従来の技術】従来、水晶ウェハをエッチングして形成
する水晶振動子の製造工程は、特開昭52−76894
号公報に開示されるように、図3の断面図のごとく、以
下の(a)〜(e)の工程から構成される水晶片製造工
程、及び水晶片を発振させるための電極形成工程、それ
らを実装する実装工程からなる。ここではその水晶片の
製造工程についてのみ説明する。一般に図2に示すよう
に1枚の水晶ウェハ100に多数の水晶片307を形成
する。図2(1)のB部を拡大したのが図2(2)であ
る。その水晶片の断面A−A’で図3の製造工程を説明
する。図2(2)に記した水晶片307の振動する部分
の幅(振動体幅)Wが周波数特性上、重要なファクター
となる。
2. Description of the Related Art Conventionally, a manufacturing process of a quartz oscillator formed by etching a quartz wafer is disclosed in Japanese Patent Laid-Open No. Sho 52-76894.
As shown in the cross-sectional view of FIG. 3, a crystal blank manufacturing process including the following steps (a) to (e), an electrode forming process for oscillating the crystal blank, and the like. Mounting process. Here, only the manufacturing process of the crystal blank will be described. Generally, as shown in FIG. 2, a large number of crystal pieces 307 are formed on one crystal wafer 100. FIG. 2B is an enlarged view of a portion B in FIG. The manufacturing process of FIG. 3 will be described with reference to the cross section AA ′ of the crystal blank. The width (oscillator width) W of the vibrating portion of the crystal blank 307 shown in FIG. 2B is an important factor in frequency characteristics.

【0003】まず、図3(a)「不透明耐食膜成膜」工
程において、あらかじめ40〜120μm厚程度にカッ
トされた水晶ウェハ100の表裏に不透明耐食膜101
を成膜する。一般にAu/Cr膜を800〜1000オ
ングストロームずつ積層する。成膜方法はスパッタ、も
しくは蒸着で行う。ここでAu/Cr膜を使用するのは
後記する図3(d)において使用するHFの耐食膜とす
るためである。
First, in an "opaque corrosion-resistant film forming" step of FIG. 3A, an opaque corrosion-resistant film 101 is formed on the front and back of a quartz wafer 100 which has been cut to a thickness of about 40 to 120 μm in advance.
Is formed. Generally, an Au / Cr film is laminated in a thickness of 800 to 1000 angstroms. The film is formed by sputtering or vapor deposition. Here, the Au / Cr film is used in order to obtain a HF corrosion-resistant film used in FIG. 3D described later.

【0004】次に、図3(b)「感光性レジストパター
ン形成」工程において、不透明耐食膜(Au/Cr膜)
101上、かつ水晶ウェハ100の表裏に感光性レジス
ト102を塗布する。一般的にはポジ型レジスト、東京
応化(株)製OFPR800が使用され、片側をスピン
コートで成膜しプレベークした後、残る面を同じように
成膜する。膜厚は表裏とも1μm程度である。次に、感
光性レジスト102を露光するのであるが、耐食膜が不
透明膜であるため両面にフォトマスク103を設置し両
側から露光106する。続いて東京応化(株)製の現像
液NMD−3で現像、所定のパターンを得る。
[0004] Next, in the "photosensitive resist pattern formation" step of FIG. 3B, an opaque corrosion-resistant film (Au / Cr film) is formed.
A photosensitive resist 102 is applied on 101 and on the front and back of the quartz wafer 100. In general, a positive type resist, OFPR800 manufactured by Tokyo Ohka Co., Ltd. is used. One side is formed by spin coating and prebaked, and then the remaining surface is formed in the same manner. The film thickness is about 1 μm on both sides. Next, the photosensitive resist 102 is exposed. Since the corrosion-resistant film is an opaque film, photomasks 103 are provided on both sides, and exposure is performed from both sides. Subsequently, development is performed with a developer NMD-3 manufactured by Tokyo Ohka Co., Ltd. to obtain a predetermined pattern.

【0005】この後、図3(c)「不透明耐食膜パター
ン形成」工程において、ヨウ化カリ/ヨウ素混合水溶液
中に浸漬しAu膜をエッチング、よく水洗した後、続い
て硝酸第2セリウムアンモン水溶液中に浸漬し、Cr膜
をエッチング、Au/Cr膜を所定のパターンとする。
[0005] Thereafter, in the "opaque corrosion-resistant film pattern forming" step of FIG. 3C, the Au film is immersed in an aqueous solution of potassium iodide / iodine, and the Au film is etched and thoroughly washed with water. Then, the Cr film is etched, and the Au / Cr film is formed into a predetermined pattern.

【0006】続いて、図3(d)「水晶エッチング」工
程において、40℃の40%HF水溶液に浸漬し、水晶
ウェハ100をエッチング、所定のパターンとする。エ
ッチング時間はZ方向に切り出した音叉水晶ウェハ10
0μm厚で約3時間である。
Subsequently, in a “crystal etching” step of FIG. 3D, the crystal wafer 100 is immersed in a 40% HF aqueous solution at 40 ° C. to etch the crystal wafer 100 into a predetermined pattern. The etching time is set to the tuning fork crystal wafer 10 cut in the Z direction.
About 3 hours at 0 μm thickness.

【0007】最後に、図3(e)「不透明耐食膜除去」
工程において、アセトン中に浸漬し感光性レジストを除
去、続いてAu/Cr膜のエッチング液にそれぞれ浸漬
し、不透明耐食膜を剥離除去する。剥離後はよく水洗す
る。
Finally, FIG. 3 (e) "Removal of opaque corrosion resistant film"
In the process, the photosensitive resist is removed by dipping in acetone, and then dipped in an etching solution for the Au / Cr film to peel off the opaque corrosion-resistant film. After peeling, wash well.

【0008】また、特開昭52−35592号公報に開
示されるように水晶振動子の形状に相当するマスクを水
晶ウェハの片面のみに設けて、他方の面は全面金属膜の
で覆い、マスク側からエッチングすることで水晶ウェハ
を水晶振動子に加工する方法がある。
Further, as disclosed in Japanese Patent Application Laid-Open No. 52-35592, a mask corresponding to the shape of a quartz oscillator is provided on only one surface of a quartz wafer, and the other surface is entirely covered with a metal film. There is a method in which a quartz crystal wafer is processed into a quartz oscillator by etching from above.

【0009】さらに、特開昭62−71313号公報に
開示されるように水晶ウェハの表裏面にCr、Au等の
金属膜を設けずにフォトレジストを塗布し、表裏いずれ
か片側から水晶振動子の形状のフォトマスクを用い、表
裏面のフォトレジストを同時に露光する。そして水晶ウ
ェハをエッチングして水晶振動子形状を得る方法があ
る。
Further, as disclosed in Japanese Patent Application Laid-Open No. 62-71313, a photoresist is applied to the front and back surfaces of the quartz wafer without providing a metal film such as Cr, Au, etc. The photoresist on the front and back surfaces is simultaneously exposed using a photomask having the shape shown in FIG. Then, there is a method in which a quartz crystal wafer is etched to obtain a quartz oscillator shape.

【0010】[0010]

【発明が解決しようとする課題】しかしながら上記のよ
うな従来技術製造方法によれば、上記図3(b)工程に
おいて、上下フォトマスクを別々に露光機にセットし、
100倍程度のスコープを用いて上下マスクにピントを
それぞれ合わせながら位置合わせをするため、必ず位置
ずれGが少なくとも数ミクロン程度生じ、水晶エッチン
グ時の寸法幅が安定しないという課題があった。図4に
おいて説明すると、(ア)のように上下フォトマスクの
位置ずれがない場合は図2で説明した水晶片の振動体幅
が図4のW1のように感光性レジスト102幅とほぼ同
じになるが、(イ)のようにずれGがある場合は水晶片
の振動体幅W2は感光性レジスト102幅よりかなり小
さくなってしまう。水晶振動子の発振する周波数は音叉
型、AT型を問わず外形形状に大きく依存するため、周
波数ばらつきが大きくなり製造歩留まり、品質を落とす
大きな原因となっていた。
However, according to the above-mentioned prior art manufacturing method, in the above-described step of FIG. 3B, the upper and lower photomasks are separately set in an exposure machine,
Since the positioning is performed while adjusting the focus on the upper and lower masks using a scope of about 100 times, the displacement G always occurs at least about several microns, and there is a problem that the dimensional width at the time of crystal etching is not stable. Referring to FIG. 4, when there is no positional shift between the upper and lower photomasks as shown in FIG. 4A, the width of the vibrating body of the crystal piece described in FIG. 2 is substantially the same as the width of the photosensitive resist 102 as indicated by W1 in FIG. However, when there is a shift G as shown in (a), the vibrating body width W2 of the crystal blank becomes considerably smaller than the width of the photosensitive resist 102. Since the oscillation frequency of the crystal resonator greatly depends on the outer shape regardless of whether it is a tuning fork type or an AT type, the frequency variation is increased, which is a major cause of lowering production yield and quality.

【0011】さらにこれらを防ぐため上下フォトマスク
を熟練した作業者が時間をかけ、合わせ調整しており、
作業者の大きな負担となっていた。また2枚のフォトマ
スクの合わせ精度を上げなくてはならず、フォトマスク
製造費も増加していた。
In order to prevent these problems, an operator skilled in upper and lower photomasks takes time and adjusts the alignment.
It was a heavy burden on the workers. In addition, the alignment accuracy of the two photomasks must be increased, and the cost of photomask production has also increased.

【0012】また、特開昭52−35592号公報で
は、片面からのエッチングとなるためエッチング時間が
両面からのエッチングに比較して2倍になるという課題
が生じる。そのためエッチングの耐食膜が耐えられず
に、得られる水晶振動子に孔が多数発生してしまうとい
う課題も併せ持つ。
Further, in Japanese Patent Application Laid-Open No. 52-35592, since the etching is performed from one side, there is a problem that the etching time is twice as long as the etching from both sides. Therefore, there is also a problem that a large number of holes are generated in the obtained crystal resonator because the corrosion resistant film of etching cannot withstand.

【0013】また、特開昭62−71313号公報で
は、ネガ型フォトレジストを用いても水晶エッチングで
は容易に剥離してしまい、水晶振動子にまで形成できな
いという課題がある。
Further, Japanese Patent Application Laid-Open No. Sho 62-71313 has a problem that even if a negative photoresist is used, it is easily peeled off by quartz etching, and it is not possible to form a quartz oscillator.

【0014】本発明は上記課題を解決するためになされ
たもので、水晶振動子の製造歩留まりや品質を向上さ
せ、さらに作業者のフォトマスクの合わせ調整の負荷が
なく、フォトマスクの製造費を削減できる水晶振動子の
製造方法を提供することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and improves the production yield and quality of a quartz oscillator. Further, there is no burden on the operator for adjusting the alignment of the photomask, and the production cost of the photomask is reduced. It is an object of the present invention to provide a method for manufacturing a crystal resonator that can be reduced.

【0015】[0015]

【課題を解決するための手段】上記課題を解決するた
め、本発明の請求項1記載の水晶振動子の製造方法によ
れば、水晶ウェハの表裏に露光の波長を透過するエッチ
ング耐食材を成膜する工程と、前記ウェハの表裏に感光
性レジストを全面形成し、片面からパターンマスクを通
して一括露光、現像し所定のレジストパターンを水晶ウ
ェハの表裏に形成する工程と、前記水晶ウェハのエッチ
ング耐食膜をエッチングし所定のエッチング耐食膜パタ
ーンを形成する工程と、前記水晶ウェハをエッチング
し、所定の水晶パターンを形成する工程とを備えてい
る。
According to a first aspect of the present invention, there is provided a method for manufacturing a quartz oscillator, comprising forming an etching corrosion-resistant material on the front and back of a quartz wafer, which transmits an exposure wavelength. A step of forming a photosensitive resist on the entire surface of the front and back of the wafer, a step of forming a predetermined resist pattern on the front and back of the quartz wafer by simultaneously exposing and developing from one side through a pattern mask, and an etching resistant film of the quartz wafer And forming a predetermined etching corrosion-resistant film pattern and etching the quartz wafer to form a predetermined quartz pattern.

【0016】このように、水晶ウェハの表裏に形成する
エッチング耐食材を、露光の波長を透過する膜とするこ
とで、前記ウェハの表裏に感光性レジストを全面形成し
片面からパターンマスクを通して一括露光、現像する
と、表裏のレジストパターンを位置ずれや寸法の差をほ
とんどなくすことができる。これはそのまま水晶振動子
形状の安定化を意味し、水晶振動子の製造歩留まりや品
質を向上させ、さらに作業者のフォトマスクの合わせ調
整の負荷がなく、フォトマスクの製造費を削減できる。
As described above, by making the etching corrosion resistant material formed on the front and back of the quartz wafer into a film that transmits the wavelength of the exposure, a photosensitive resist is formed on the entire surface of the wafer and the whole surface is exposed from one side through a pattern mask. When developed, the resist patterns on the front and back sides can be almost free from displacement and dimensional difference. This means that the shape of the crystal unit is stabilized as it is, thereby improving the production yield and quality of the crystal unit, and further, there is no burden on the operator for adjusting the alignment of the photomask, and the photomask manufacturing cost can be reduced.

【0017】[0017]

【発明の実施の形態】以下、図1を参照しながら、本発
明の一実施形態に係わる水晶振動子の製造方法について
説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing a crystal resonator according to an embodiment of the present invention will be described with reference to FIG.

【0018】まず、図1(a)「透明耐食膜成膜」工程
において、あらかじめ40〜120μm厚程度にカット
された水晶ウェハ100の表裏に透明耐食膜201を成
膜する。ここでは酸化アルミナ膜を800〜1000オ
ングストローム成膜する。成膜方法はスパッタで行う。
ここで酸化アルミナ膜を使用するのは後記する図1
(b)において感光性レジストを露光する際に片側から
露光できるように露光波長を透過すること、かつ図1
(d)において使用するHFの耐食膜とできること、の
特徴を有しているためである。すなわち、この2つの特
徴を有していれば酸化アルミナでなくてもよい。たとえ
ば酸化クロム・酸化タンタル等でも良い。しかしそれら
の透明耐食膜を後記する図1(c)でパターン形成する
際に用いるエッチング液、エッチングガスに水晶ウェハ
が腐食されないことが望ましい。また、ここで用いる耐
食膜は膜質が重要である。いかにHFに対して耐食性が
あっても膜質が悪いとピンホールが発生、HFエッチン
グ時に水晶が穴だらけになってしまう。耐食膜の膜質を
向上させるためにスパッタはDCスパッタより酸化アル
ミナターゲットを用いArに酸素を添加したスパッタガ
ス中で行うRFスパッタが用いられる。さらにスパッタ
温度が高いほど膜質が良くなる。スパッタ温度があまり
上げられない場合はスパッタ後にアニール処理をする
か、膜厚を増やすことでも対応できる。
First, in a "transparent corrosion-resistant film forming" step of FIG. 1A, a transparent corrosion-resistant film 201 is formed on the front and back of the quartz wafer 100 cut in advance to a thickness of about 40 to 120 μm. Here, an alumina oxide film is formed to a thickness of 800 to 1000 angstroms. The film is formed by sputtering.
Here, the use of the alumina oxide film is described in FIG.
In FIG. 1 (b), when exposing the photosensitive resist, the exposing wavelength is transmitted so that exposure can be performed from one side, and FIG.
This is because HF used in (d) can be made a corrosion-resistant film. That is, it is not necessary to use alumina oxide as long as it has these two features. For example, chromium oxide or tantalum oxide may be used. However, it is desirable that the quartz wafer is not corroded by an etching solution or an etching gas used for patterning these transparent corrosion-resistant films in FIG. 1C described later. The quality of the corrosion resistant film used here is important. Even if it has corrosion resistance to HF, if the film quality is poor, pinholes are generated and the crystal becomes full of holes during HF etching. In order to improve the film quality of the corrosion-resistant film, RF sputtering performed in a sputtering gas obtained by adding oxygen to Ar and using an alumina oxide target instead of DC sputtering is used. Furthermore, the higher the sputtering temperature, the better the film quality. If the sputtering temperature cannot be increased too much, it can be dealt with by annealing after the sputtering or by increasing the film thickness.

【0019】次に、図1(b)「感光性レジストパター
ン形成」工程において、透明耐食膜(酸化アルミナ膜)
201上、かつ水晶ウェハ100の表裏に感光性レジス
ト102を塗布する。ここでも東京応化(株)製OFP
R800を使用した。片側をスピンコートで成膜しプレ
ベーク(90℃*10分)した後、残る面を同じように
成膜する。膜厚は表裏とも1μm程度である。次に、感
光性レジスト102を露光するのであるが耐食膜が透明
膜であるため図1(b)に示すように片面にフォトマス
ク103を設置し露光106する。続いて東京応化
(株)製の現像液NMD−3で現像、所定のパターンを
得る。
Next, in a "photosensitive resist pattern forming" step of FIG. 1B, a transparent corrosion-resistant film (alumina oxide film) is formed.
A photosensitive resist 102 is applied on 201 and on the front and back of the quartz wafer 100. Again, Tokyo Oka's OFP
R800 was used. After forming a film on one side by spin coating and pre-baking (90 ° C. * 10 minutes), the remaining surface is formed in the same manner. The film thickness is about 1 μm on both sides. Next, the photosensitive resist 102 is exposed. Since the corrosion-resistant film is a transparent film, a photomask 103 is provided on one side as shown in FIG. Subsequently, development is performed with a developer NMD-3 manufactured by Tokyo Ohka Co., Ltd. to obtain a predetermined pattern.

【0020】この後、図1(c)「透明耐食膜パターン
形成」工程において、燐酸水溶液中に浸漬し酸化アルミ
ナ膜をエッチング、よく水洗し所定のパターンとする。
Thereafter, in a "transparent corrosion-resistant film pattern forming" step of FIG. 1C, the alumina oxide film is immersed in a phosphoric acid aqueous solution, etched, and thoroughly washed with water to form a predetermined pattern.

【0021】続いて、図1(d)「水晶エッチング」工
程において、40℃の40%HF水溶液に浸漬し、水晶
ウェハ100をエッチング、所定のパターンとする。エ
ッチング時間はZ方向に切り出した音叉水晶ウェハ10
0μm厚で約3時間である。
Subsequently, in a "crystal etching" step shown in FIG. 1D, the crystal wafer 100 is immersed in a 40% HF aqueous solution at 40.degree. The etching time is set to the tuning fork crystal wafer 10 cut in the Z direction.
About 3 hours at 0 μm thickness.

【0022】最後に、図1(e)「透明耐食膜除去」工
程において、アセトン中に浸漬し感光性レジストを除
去、続いて上記燐酸水溶液中に浸漬し酸化アルミナ膜を
剥離除去する。剥離後はよく水洗する。
Finally, in the step of removing the transparent corrosion-resistant film shown in FIG. 1E, the photosensitive resist is removed by dipping in acetone, and then dipped in the phosphoric acid aqueous solution to peel off the alumina oxide film. After peeling, wash well.

【0023】[0023]

【発明の効果】以上のように本発明の水晶振動子の製造
方法によれば、水晶の表裏に形成されたHF耐食膜をパ
ターニングする感光性レジストを単一のフォトマスクで
一括して露光感光でき、すなわち形成される表裏のHF
耐食膜パターンの位置ずれ、寸法の違いがないため、寸
法精度の高い、特性ばらつきの少ない水晶片を製造でき
る。また、これまでの表裏のフォトマスクを合わせると
いう作業者の負荷がなくなり、かつTATも大幅に削減
できる。
As described above, according to the method for manufacturing a quartz oscillator of the present invention, a photosensitive resist for patterning an HF corrosion-resistant film formed on the front and back of quartz is exposed and exposed collectively using a single photomask. HF that can be formed, ie, the front and back
Since there is no positional shift and no difference in dimension of the corrosion resistant film pattern, a crystal blank having high dimensional accuracy and little characteristic variation can be manufactured. In addition, there is no need for the operator to adjust the front and back photomasks, and the TAT can be greatly reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施形態に係る水晶振動子の製造工程
の水晶振動片の製造工程断面図。
FIG. 1 is a cross-sectional view of a manufacturing process of a crystal resonator element in a manufacturing process of a crystal resonator according to an embodiment of the present invention.

【図2】水晶振動子製造工程の途中の水晶振動片の製造
ウェハ上面図。
FIG. 2 is a top view of a manufacturing wafer of a crystal vibrating piece in the middle of a crystal resonator manufacturing process.

【図3】従来技術による水晶振動子の製造工程の水晶振
動片の製造工程断面図。
FIG. 3 is a cross-sectional view of a manufacturing process of a quartz-crystal vibrating piece in a manufacturing process of a quartz-crystal resonator according to a conventional technique.

【図4】従来技術による水晶振動片の寸法誤差を示す断
面図。
FIG. 4 is a cross-sectional view illustrating a dimensional error of a quartz-crystal vibrating reed according to a conventional technique.

【符号の説明】[Explanation of symbols]

100 水晶ウェハ 102 感光性レジスト 103 フォトマスク 106 露光 201 透明耐食膜 REFERENCE SIGNS LIST 100 crystal wafer 102 photosensitive resist 103 photomask 106 exposure 201 transparent corrosion-resistant film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 水晶ウェハの表裏に露光の波長を透過す
るエッチング耐食材を成膜する工程と、 前記水晶ウェハの表裏に感光性レジストを全面形成し、
片面からパターンマスクを通して一括露光、現像し所定
のレジストパターンを水晶ウェハの表裏に形成する工程
と、 前記水晶ウェハのエッチング耐食膜をエッチングし所定
のエッチング耐食膜パターンを形成する工程と、 前記水晶ウェハをエッチングし、所定の水晶パターンを
形成する工程とを備えることを特徴とする水晶振動子の
製造方法。
A step of forming an etching corrosion-resistant material that transmits an exposure wavelength on the front and back of the quartz wafer; and forming a photosensitive resist on the entire front and back of the quartz wafer;
A step of forming a predetermined resist pattern on the front and back of the quartz wafer by collectively exposing and developing from one surface through a pattern mask; a step of etching the etching corrosion-resistant film of the quartz wafer to form a predetermined etching corrosion-resistant film pattern; And forming a predetermined crystal pattern by etching the crystal resonator.
【請求項2】 前記エッチング耐食膜が酸化アルミであ
ることを特徴とする請求項1記載の水晶振動子の製造方
法。
2. The method according to claim 1, wherein said etching corrosion resistant film is made of aluminum oxide.
JP7422797A 1997-03-26 1997-03-26 Manufacture of crystal vibrator Withdrawn JPH10270967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7422797A JPH10270967A (en) 1997-03-26 1997-03-26 Manufacture of crystal vibrator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7422797A JPH10270967A (en) 1997-03-26 1997-03-26 Manufacture of crystal vibrator

Publications (1)

Publication Number Publication Date
JPH10270967A true JPH10270967A (en) 1998-10-09

Family

ID=13541092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7422797A Withdrawn JPH10270967A (en) 1997-03-26 1997-03-26 Manufacture of crystal vibrator

Country Status (1)

Country Link
JP (1) JPH10270967A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012767A (en) * 2003-05-27 2005-01-13 Citizen Watch Co Ltd Method for manufacturing crystal oscillator
JP2005277483A (en) * 2004-03-23 2005-10-06 Citizen Watch Co Ltd Method of manufacturing crystal resonator
JP2006074297A (en) * 2004-08-31 2006-03-16 Kyocera Kinseki Corp Exposure mask for crystal resonator
US7195715B2 (en) * 2003-05-27 2007-03-27 Citizen Watch Co., Ltd. Method for manufacturing quartz oscillator

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012767A (en) * 2003-05-27 2005-01-13 Citizen Watch Co Ltd Method for manufacturing crystal oscillator
US7195715B2 (en) * 2003-05-27 2007-03-27 Citizen Watch Co., Ltd. Method for manufacturing quartz oscillator
JP2005277483A (en) * 2004-03-23 2005-10-06 Citizen Watch Co Ltd Method of manufacturing crystal resonator
JP2006074297A (en) * 2004-08-31 2006-03-16 Kyocera Kinseki Corp Exposure mask for crystal resonator
JP4667797B2 (en) * 2004-08-31 2011-04-13 京セラキンセキ株式会社 Quartz crystal exposure mask

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