JPH10242118A - Apparatus for manufacturing semiconductor device - Google Patents

Apparatus for manufacturing semiconductor device

Info

Publication number
JPH10242118A
JPH10242118A JP4339097A JP4339097A JPH10242118A JP H10242118 A JPH10242118 A JP H10242118A JP 4339097 A JP4339097 A JP 4339097A JP 4339097 A JP4339097 A JP 4339097A JP H10242118 A JPH10242118 A JP H10242118A
Authority
JP
Japan
Prior art keywords
gas
gas introduction
plate
exhaust port
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4339097A
Other languages
Japanese (ja)
Inventor
Shinichi Imai
伸一 今井
Hideaki Okamura
秀亮 岡村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP4339097A priority Critical patent/JPH10242118A/en
Publication of JPH10242118A publication Critical patent/JPH10242118A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the dispersion of the machining dimensions by providing a means for adjusting the flow of an etching gas to make uniform the quantity of deposition species on a wafer. SOLUTION: A gas entrance quartz-made plate 2 has more gas entrance holes 1 at a region far or near an exhaust hole 4 than at other regions, and the holes 1 at the part far or near the hole 4 have large diameters to adjust the flow of an etching gash gas and make uniform the quantity of deposition species in a wafer plane to reduce the dispersion of the machining dimensions. Part or entire of a gas entrance plate 2 heatable by a heater is made of a high-thermal conductivity material to effectively utilize the heating by the heater or the radiation heat of a plasma. This prevents the holes 1 disposed at the periphery from being clogged with a polymer film due to heat conduction to the periphery, suppresses the gas flow change and reduces the dispersion of the machining dimensions.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体装置の製造
装置で、特にドライエッチング装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a dry etching apparatus.

【０００２】[0002]

【従来の技術】近年の半導体デバイスの集積度向上には
めざましいものがある。それと同時にデバイスを製造す
る基板となるシリコンウエハの面積も製造コスト低減の
ために６インチから８インチが主流となり、１２インチ
の検討も始まっている。これら大口径ウエハを用いてデ
バイスを製造する場合、製造工程における設備は大口径
に対応した設備でなければならない。特にドライエッチ
ング工程では均一な大口径プラズマが必要となる。それ
はウエハ面内にわたって加工ばらつきを少なくするため
である。2. Description of the Related Art In recent years, there has been a remarkable improvement in the degree of integration of semiconductor devices. At the same time, the area of a silicon wafer serving as a substrate for manufacturing a device is mainly 6 inches to 8 inches in order to reduce the manufacturing cost, and the study of 12 inches has begun. When devices are manufactured using these large-diameter wafers, the equipment in the manufacturing process must be equipment compatible with large-diameter wafers. Particularly, in the dry etching process, uniform large-diameter plasma is required. This is to reduce processing variations over the wafer surface.

【０００３】従来のドライエッチング装置について図を
用いながら説明する。図７（ａ）は図７（ｂ）でのＸ−
Ｘ'線に沿った平行平板型プラズマを用いたドライエッ
チング装置の上部水平断面図を、図７（ｂ）は図７
（ａ）でのＡ−Ｏ−Ａ'断面図を示している。図７にお
いては１はガス導入孔、２はガス導入板、３はフォーカ
スリング、４は排気口、５は下部電極、６はウエハ、７
は反応室、８は圧力制御バルブ、９は排気ポンプ、１０
はガスボンベ、１１はマスフローコントローラー、１２
は高周波電源、１３はマッチャー、１４はパイプであ
る。ガスボンベ１０からフルオロカーボンガスであるＣ
4Ｆ8、ＣＨＦ3にＣＯ、Ａｒ、Ｎ 2を加えた混合ガスをマ
スフローコントローラー１１、パイプ１４および石英製
のガス導入板２を通して反応室７に導入する。一方で、
圧力制御バルブ８で圧力を制御しながらガスを排気口４
から排気ポンプ９で排気して、反応室７内の圧力を１ｍ
Ｔｏｒｒから５００ｍＴｏｒｒの範囲内の一定値に保持
する。その後に高周波電源１２によって高周波電圧を下
部電極５に印加することにより、反応室７内のガスを解
離させてプラズマを生成し、プラズマからイオンをウエ
ハ６の表面に向かって引き込みエッチングを行う。下部
電極５の直下には高周波電源１２、マッチャー１３など
が接続されているため排気口４は反応室７の底面の隅に
設置している。FIG. 1 shows a conventional dry etching apparatus.
It will be described while using. FIG. 7 (a) is a cross-sectional view of FIG. 7 (b).
Dry etching using parallel plate plasma along the X 'line
FIG. 7B is an upper horizontal sectional view of the chucking device, and FIG.
(A) is a cross-sectional view taken along the line AOA ′. In FIG.
1 is a gas introduction hole, 2 is a gas introduction plate, 3 is a focus
Sling, 4 exhaust port, 5 lower electrode, 6 wafer, 7
Is a reaction chamber, 8 is a pressure control valve, 9 is an exhaust pump, 10
Is a gas cylinder, 11 is a mass flow controller, 12
Is a high frequency power supply, 13 is a matcher, and 14 is a pipe.
You. C, which is a fluorocarbon gas from the gas cylinder 10
FourF8,CHFThreeCO, Ar, N TwoGas mixture with
Sflow controller 11, pipe 14, and quartz
Into the reaction chamber 7 through the gas introduction plate 2. On the other hand,
Exhaust gas 4 while controlling pressure with pressure control valve 8
And the pressure in the reaction chamber 7 is reduced by 1 m
Maintain a constant value within the range of Torr to 500 mTorr
I do. After that, the high frequency voltage is reduced by the high frequency power supply 12.
The gas in the reaction chamber 7 is released by applying the
To generate a plasma, and to release ions from the plasma.
C. Etching is performed toward the surface of C6. beneath
Immediately below the electrode 5, a high frequency power supply 12, a matcher 13, etc.
Is connected to the exhaust port 4 at the bottom corner of the reaction chamber 7.
Has been installed.

【０００４】図８に従来のガス導入板２の図を示す。図
８（ａ）は上面図、（ｂ）はＢ-Ｂ'線に沿った断面図で
ある。ガス導入板２は図７に示した製造装置に設置され
ており、ガス導入板には多数のガス導入孔１が放射状に
形成されている。図４に寸法シフト量の分布をウエハ面
の中心を原点とした時の測定位置との関係を破線で示し
た。ここでフォトリソグラフィーにより形成したレジス
トパターンの寸法をレジストをマスクにした被エッチン
グ膜のドライエッチング後の寸法から差し引いた量を寸
法シフト量と定義し、また測定位置のプラス側に排気口
４がある。寸法シフト量はウエハ中心に比べ排気口から
遠い領域で小さくなることがわかる。また、排気口のご
く近傍でもウエハ中心に比べ寸法シフト量が小さいこと
がわかる。このように被エッチング膜の加工寸法がウエ
ハ面内で分布を有しており、すなわちウエハ面内の加工
ばらつきが生じている。FIG. 8 shows a diagram of a conventional gas introduction plate 2. FIG. 8A is a top view, and FIG. 8B is a cross-sectional view along the line BB ′. The gas introduction plate 2 is installed in the manufacturing apparatus shown in FIG. 7, and a large number of gas introduction holes 1 are radially formed in the gas introduction plate. FIG. 4 shows the relationship between the distribution of the dimensional shift amount and the measurement position when the center of the wafer surface is set as the origin by a broken line. Here, the amount obtained by subtracting the dimension of the resist pattern formed by photolithography from the dimension after dry etching of the film to be etched using the resist as a mask is defined as a dimension shift amount, and an exhaust port 4 is provided on the plus side of the measurement position. . It can be seen that the dimension shift amount is smaller in the region far from the exhaust port as compared to the center of the wafer. Also, it can be seen that the dimensional shift amount is small even in the immediate vicinity of the exhaust port as compared with the center of the wafer. As described above, the processing dimensions of the film to be etched have a distribution in the wafer surface, that is, processing variations occur in the wafer surface.

【０００５】図７で示しているように排気口は反応室の
底面の隅に設置されているため、エッチングガスの流れ
は排気口側に向かい、ウエハ６面上の排気口から遠い領
域では排気口近くの領域に比較してデポジションとして
働く活性種(ＣＦ，ＣＦ2,ＣＦ3：以下デポジション種と
いう）の量が減少するものと推測される。また、排気口
近傍では急激にガスが引かれるため、ウエハ表面上にガ
スの滞在する時間が短いためデポジション種の量が少な
くなるものと考えられる。デポジション種はドライエッ
チングの際に、パターン側壁保護膜を形成するために必
要であり、側壁保護膜によってエッチングによるパター
ン形状が制御されることが多いため、デポジション種の
量がウエハ面内で分布を有するとウェハ面内の加工ばら
つきに結びつく。[0007] As shown in FIG. 7, since the exhaust port is provided at the corner of the bottom of the reaction chamber, the flow of the etching gas is directed toward the exhaust port, and is exhausted in a region far from the exhaust port on the surface of the wafer 6. It is presumed that the amount of active species (CF, CF 2 , CF 3 : hereinafter referred to as “deposition species”) acting as deposition decreases in comparison with the region near the mouth. Further, it is considered that the gas is rapidly drawn in the vicinity of the exhaust port, and the amount of the deposition species is reduced because the time during which the gas stays on the wafer surface is short. The deposition type is necessary for forming the pattern side wall protective film during dry etching, and the pattern shape by etching is often controlled by the side wall protective film. Having a distribution leads to processing variations in the wafer surface.

【０００６】また、ここで用いられたガス導入板は石英
でできており熱伝導率が低いため、プラズマが生成され
ると、ガス導入板の中央部の温度が周辺部のそれに比べ
て高くなり、中心部から周辺部に向かって温度が低くな
るという温度分布が生じる。温度が高い場合にはガス導
入孔はエッチング時の反応生成物であるポリマー膜で覆
われにくいが、温度の低い周辺部分のガス導入孔はポリ
マー膜で覆われてくる。エッチング時間が長くなるとガ
ス導入孔がポリマー膜でふさがれてしまいガスの供給量
が減少し、ウェハ面内の加工ばらつきが多くなる。Further, since the gas introduction plate used here is made of quartz and has a low thermal conductivity, when plasma is generated, the temperature of the central portion of the gas introduction plate becomes higher than that of the peripheral portion. Then, a temperature distribution occurs in which the temperature decreases from the center toward the periphery. When the temperature is high, the gas introduction holes are hard to be covered with the polymer film which is a reaction product at the time of etching, but the gas introduction holes in the low temperature peripheral portion are covered with the polymer film. When the etching time is long, the gas introduction holes are blocked by the polymer film, the gas supply amount is reduced, and the processing variation in the wafer surface is increased.

【０００７】[0007]

【発明が解決しようとする課題】しかしながら上記従来
の半導体装置の製造装置の構成では、排気口との関係に
おいてウエハ面内でデポジション種の量が分布を持つた
め、加工寸法が分布を持つという欠点があった。また石
英製のガス導入板では長時間使用するとガス板の熱伝導
率が低いために周辺に配置したガス導入孔がポリマー膜
で埋まるのでガスの流れが変化し、ウェハ面内の加工ば
らつきが多くなるという欠点があった。この加工ばらつ
きは例えば配線のオープンおよびショートを引き起こし
デバイス歩留まりを低下させることになる。However, in the configuration of the above-described conventional semiconductor device manufacturing apparatus, since the amount of deposition species has a distribution in the wafer surface in relation to the exhaust port, the processing size has a distribution. There were drawbacks. In addition, if a gas introduction plate made of quartz is used for a long time, the thermal conductivity of the gas plate will be low, and the gas introduction holes arranged around it will be filled with a polymer film. There was a disadvantage of becoming. This processing variation causes, for example, an open and a short circuit of the wiring, and lowers the device yield.

【０００８】上記課題について鑑み、本発明の目的はウ
エハ面内でデポジション種の量を均一にするガス導入板
を有する半導体装置の製造装置を提供するものである。In view of the above problems, an object of the present invention is to provide an apparatus for manufacturing a semiconductor device having a gas introduction plate for making the amount of deposition species uniform in a wafer surface.

【０００９】[0009]

【課題を解決するための手段】この目的を達成するため
に、本発明の半導体装置の製造装置は、エッチング膜の
面内で活性種の量を均一にするためエッチングガスの流
れを調整する調整部を備えている。調整部は、ガス導入
板の排気口から遠い領域または近い領域のどちらか一方
の領域が他方の領域より多数のガス導入孔を持つこと、
または排気口から遠い部分または近い部分のガス導入孔
の直径を大きくしたガス導入板を有することを特徴とし
ている。上記の構成によりガスの流れを調整してウエハ
面内でデポジション種の量を均一化して加工寸法ばらつ
きを低減することができる。In order to achieve the above object, an apparatus for manufacturing a semiconductor device according to the present invention comprises an adjusting device for adjusting a flow of an etching gas in order to make the amount of active species uniform in a plane of an etching film. It has a part. The adjusting unit has one of a region far from the exhaust port of the gas introduction plate or a region near the exhaust port has a larger number of gas introduction holes than the other region,
Alternatively, a gas introduction plate having a gas introduction hole in which the diameter of the gas introduction hole in a portion far or near the exhaust port is increased. With the above configuration, the flow of the gas is adjusted, the amount of the deposition type is made uniform in the wafer surface, and the variation in processing dimensions can be reduced.

【００１０】また、ヒータ加熱できるガス導入板または
ガス導入板の一部或いは全部を熱伝導率の高い材料で構
成されたガス導入板を有することを特徴としている。こ
の構成により、ヒーター加熱またはプラズマの放射熱を
効率よく利用でき、熱が周辺に伝導して周辺に配置した
ガス導入孔がポリマー膜でふさがれることを防ぐためガ
スの流れの変化を抑制でき加工寸法ばらつきを低減する
ことができる。[0010] The present invention is also characterized in that a gas introduction plate which can be heated by a heater or a gas introduction plate made of a material having high thermal conductivity is provided for a part or all of the gas introduction plate. With this configuration, the heater heat or the radiant heat of the plasma can be used efficiently, and the heat can be conducted to the surroundings to prevent the gas introduction holes located in the surroundings from being blocked by the polymer film. Dimensional variation can be reduced.

【００１１】[0011]

【発明の実施の形態】以下、本発明の半導体装置の製造
装置における第１の実施の形態について、図面を参照し
ながら説明する。図１（ａ）は図１（ｂ）でのＸ−Ｘ'
線に沿った平行平板型プラズマを用いたドライエッチン
グ装置の上部水平断面図を、図１（ｂ）は図１（ａ）で
のＡ−Ｏ−Ａ'線断面図を示している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of a semiconductor device manufacturing apparatus according to the present invention will be described with reference to the drawings. FIG. 1A shows XX ′ in FIG. 1B.
FIG. 1B is a cross-sectional view taken along the line AOA ′ in FIG. 1A, showing an upper horizontal cross-sectional view of a dry etching apparatus using parallel plate plasma along the line.

【００１２】図２に本発明の石英製のガス導入板２のそ
れぞれ上面図とＣＣ'断面図を示している 。図２は周辺
部分に加えて排気口から遠い位置に排気口に近い位置に
比べて多くのガス導入孔１を配置したガス導入板２であ
る。この位置にガスをより多く供給することでデポジシ
ョン種の減少を防止することができる。図３は周辺部に
加えて排気口から遠い位置に扇状にガス導入孔１を多く
配置し、この位置により多くのガスを供給することでデ
ポジション種の減少を防止することができる。FIG. 2 shows a top view and a CC ′ cross-sectional view of the quartz gas introduction plate 2 of the present invention. FIG. 2 shows a gas introduction plate 2 in which more gas introduction holes 1 are arranged at a position far from the exhaust port in addition to a peripheral portion as compared with a position near the exhaust port. By supplying more gas to this position, it is possible to prevent the number of deposition species from decreasing. In FIG. 3, in addition to the peripheral portion, a large number of gas introduction holes 1 are arranged in a fan shape at a position distant from the exhaust port, and by supplying more gas to this position, it is possible to prevent the number of deposition species from decreasing.

【００１３】また、図２および図３で示した同じガス導
入板を用いてガス導入板の中心を軸として１８０度回転
させて装置に取り付ければ排気口から近い位置に排気口
から遠い位置に比べて多くのガス導入孔１を配置するこ
とができる。この場合、同等の効果が得られることが実
験的にわかっている。これは、排気口から遠い位置では
ガスの滞在時間が長くなりデポジション種の減少を防止
することができると考えられる。遠い位置により多くの
ガスを導入することに比べてポンプの排気量の影響が大
きくでる傾向を生じるが、排気ポンプの排気量を選定す
ることでその影響を実効的に解消できる。具体的には反
応室容量２５ｌ、ガス供給量２５６ｓｃｃｍ（ｓｔａｎ
ｄａｒｄ ｃｕｂｉｃ ｃｅｎｔｉｍｅｔｅｒ ｐｅｒ
ｍｉｎｕｔｅ）、排気量１０００ｌ／ｍｉｎのターボポ
ンプで排気することで、上述したような影響を解決でき
ることを確認した。Further, when the same gas introduction plate shown in FIGS. 2 and 3 is used and rotated by 180 degrees around the center of the gas introduction plate and attached to the apparatus, the position is closer to the exhaust port than to the position far from the exhaust port. Many gas introduction holes 1 can be arranged. In this case, it is experimentally known that the same effect can be obtained. This is considered to be because the residence time of the gas becomes longer at a position far from the exhaust port, and it is possible to prevent the number of deposition species from decreasing. The effect of the displacement of the pump tends to be greater than when more gas is introduced into a distant position, but the influence can be effectively eliminated by selecting the displacement of the exhaust pump. Specifically, the reaction chamber volume was 25 l, and the gas supply amount was 256 sccm (stan
dar cubic centimeter per
Minute), it was confirmed that the above-described effects can be solved by exhausting air with a turbo pump having an exhaust volume of 1000 l / min.

【００１４】図４に図２に示す本発明のガス導入板を用
いた場合のコンタクトエッチング後の寸法シフト量を実
線のグラフで示す。エッチング条件としてフルオロカー
ボンガスであるＣ4Ｆ8、ＣＨＦ3にＣＯ、Ａｒ、Ｎ2を加
えた混合ガス系を用いてガス圧力を９０ｍＴｏｒｒでエ
ッチングした。ガス圧力としては１ｍＴｏｒｒから５０
０ｍＴｏｒｒでエッチングを行うが、９０ｍＴｏｒｒで
エッチングを行ったところエッチング特性として好まし
い結果が得られた。前述したように従来のガス導入板で
は排気口の影響を強く受けてしまい、エッチング後の寸
法シフト量にばらつきが強くでてしまう。特に排気口か
ら遠い位置での寸法シフト量が小さい。しかし、本発明
のガス導入板を用いることで、ウエハ面内での寸法シフ
ト量のばらつきを低減することができる。FIG. 4 is a solid line graph showing the amount of dimensional shift after contact etching when the gas introducing plate of the present invention shown in FIG. 2 is used. Etching was performed at a gas pressure of 90 mTorr using a mixed gas system in which CO, Ar, and N 2 were added to C 4 F 8 and CHF 3 which are fluorocarbon gases. The gas pressure is from 1 mTorr to 50
Etching was performed at 0 mTorr, but when etching was performed at 90 mTorr, favorable results were obtained as etching characteristics. As described above, the conventional gas introduction plate is strongly affected by the exhaust port, and the dimensional shift amount after the etching greatly varies. In particular, the dimensional shift amount at a position far from the exhaust port is small. However, by using the gas introduction plate of the present invention, it is possible to reduce the variation in the dimensional shift amount within the wafer surface.

【００１５】次に第二の実施の形態における半導体装置
の製造装置について述べる。図５（ａ）,（ｂ）は第二
の実施の形態における半導体装置の製造装置のガス導入
板のそれぞれ上面図とＥ−Ｅ’断面図である。排気口か
ら遠い領域のガス導入孔の口径を排気口に近い領域のガ
ス導入孔の口径より大きくすることで寸法シフト量の増
大を招いていたデポジション種の減少を防止することが
できる。その理由は第一の実施の形態と同様であると考
えられる。図に示した口径はそれぞれＤ１として１．５
ｍｍ、Ｄ２として１．０ｍｍ、Ｄ３として０．５ｍｍと
した。Next, a semiconductor device manufacturing apparatus according to a second embodiment will be described. FIGS. 5A and 5B are a top view and a cross-sectional view taken along line EE ′ of a gas introduction plate of the semiconductor device manufacturing apparatus according to the second embodiment. By making the diameter of the gas introduction hole in the area far from the exhaust port larger than the diameter of the gas introduction hole in the area near the exhaust port, it is possible to prevent a decrease in the number of deposition species that has caused an increase in the dimensional shift amount. The reason is considered to be the same as in the first embodiment. The diameter shown in the figure is 1.5 for each D1.
mm, D2 was 1.0 mm, and D3 was 0.5 mm.

【００１６】なお、前記第一の実施の形態のガス導入孔
の数の配置と前記第二の実施の形態の口径の大きさの異
なるガス導入孔の配置を組み合わせたガス導入板を用い
てもよい。次に第三の実施の形態における半導体装置の
製造装置について述べる。図６（ａ）,（ｂ）にガス導
入板自体を加熱できるようにしたガス導入板のそれぞれ
水平断面図と図６（ｂ）にＦ−Ｆ’断面図を示す。この
ガス導入板はタングステンなどの金属板状体１５を窒化
アルミニウムなどのセラミック板状体１６で挟み込んだ
構造である。金属板状体をセラミック板状体で挟み込ん
だ構造としたのは直接金属がプラズマにふれることを防
止して、金属が劣化することおよび金属により反応室内
が汚染されることを防止するためである。ガス導入孔は
金属板状体のない部分に形成されている。金属は熱伝導
率が良いため中央部の熱が周辺部に伝わり、周辺部の温
度が比較的に短時間に上昇してポリマー膜に覆われ難く
なる。さらに、金属に電流を流すことによりガス導入板
を加熱することができる。電流は給電点１７から導入す
る。１００度以上３００度以下好ましくは１５０度に加
熱すればポリマー膜の付着を防止することができる。そ
の結果、ガスの流れが変化することを防止することがで
きる。It is to be noted that a gas introduction plate in which the arrangement of the number of gas introduction holes of the first embodiment is combined with the arrangement of gas introduction holes having different diameters of the second embodiment may be used. Good. Next, a semiconductor device manufacturing apparatus according to a third embodiment will be described. 6 (a) and 6 (b) show a horizontal cross-sectional view of the gas introducing plate capable of heating the gas introducing plate itself, and FIG. 6 (b) shows a cross-sectional view taken along line FF '. This gas introduction plate has a structure in which a metal plate 15 such as tungsten is sandwiched between ceramic plate 16 such as aluminum nitride. The structure in which the metal plate is sandwiched between the ceramic plates is to prevent the metal from directly touching the plasma and to prevent the metal from deteriorating and the metal from contaminating the reaction chamber. . The gas introduction hole is formed in a portion without the metal plate. Since the metal has good thermal conductivity, heat in the central portion is transmitted to the peripheral portion, and the temperature in the peripheral portion rises in a relatively short time, making it difficult for the metal film to be covered. Further, the gas introduction plate can be heated by applying an electric current to the metal. The current is introduced from the feed point 17. Heating at a temperature of 100 degrees or more and 300 degrees or less, preferably 150 degrees, can prevent adhesion of the polymer film. As a result, it is possible to prevent the gas flow from changing.

【００１７】また、ガス導入板の材料を石英から炭化シ
リコン、窒化アルミなどの熱伝導率の良い材料にかえる
とさらにガス導入板全体の熱伝導率が良くなる。上記金
属板状体と熱伝導率の良いガス導入板の材料を組み合わ
せるとさらに効果的である。なお、前記第一の実施の形
態のガス導入孔の数の配置と前記第二の実施の形態の口
径の大きさの異なるガス導入孔の配置および前記第三の
実施の形態を組み合わせたガス導入板を用いてもよい。When the material of the gas introduction plate is changed from quartz to a material having good thermal conductivity such as silicon carbide or aluminum nitride, the thermal conductivity of the entire gas introduction plate is further improved. It is more effective to combine the metal plate and the material of the gas introduction plate having good thermal conductivity. It should be noted that the arrangement of the number of gas introduction holes in the first embodiment, the arrangement of gas introduction holes having different diameters in the second embodiment, and the gas introduction combining the third embodiment are described. A plate may be used.

【００１８】ここで、特許請求の範囲に示された発明は
上記実施例で説明した態様に限られるものではない。Here, the invention described in the claims is not limited to the embodiment described in the above embodiment.

【００１９】[0019]

【発明の効果】以上のように、本発明は、排気口から遠
い領域または近い領域にガス導入孔の数を増加させたガ
ス導入板を有することまたは排気口から遠い領域または
近い領域のガス導入孔の直径を大きくしたガス導入板を
有することでウエハ上でのデポジション種の量を均一化
でき加工寸法ばらつきを低減することができる。As described above, according to the present invention, a gas introduction plate having an increased number of gas introduction holes is provided in a region far or near the exhaust port, or a gas introduction plate in a region far or near the exhaust port. By providing the gas introduction plate having a large hole diameter, the amount of the deposition species on the wafer can be made uniform, and the variation in processing dimensions can be reduced.

【００２０】また本発明は、加熱することができるガス
導入板またはプラズマからの放射熱を伝導させる材料で
できたガス導入板を用いることによりポリマー膜による
ガス導入孔が塞がることに起因するガスの流れの変化を
防止することができる。Further, the present invention provides a gas introduction plate that can be heated or a gas introduction plate made of a material that conducts radiant heat from plasma, whereby the gas introduction caused by the gas introduction hole being blocked by the polymer film is reduced. Changes in flow can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明のエッチング装置の概略図FIG. 1 is a schematic diagram of an etching apparatus of the present invention.

【図２】本発明の第一の実施の形態におけるガス導入板
を示す図FIG. 2 is a view showing a gas introduction plate according to the first embodiment of the present invention.

【図３】本発明の第一の実施の形態におけるガス孔を扇
状に配置したガス導入板を示す図FIG. 3 is a view showing a gas introduction plate in which gas holes are arranged in a fan shape according to the first embodiment of the present invention;

【図４】本発明および従来のガス導入板を用いた場合の
寸法シフト量のウエハ位置依存性を示す図FIG. 4 is a view showing the wafer position dependence of the dimensional shift amount when the present invention and the conventional gas introduction plate are used.

【図５】本発明の第二の実施の形態におけるガス導入板
を示す図FIG. 5 is a diagram showing a gas introduction plate according to a second embodiment of the present invention.

【図６】本発明の第三の実施の形態における加熱可能な
ガス導入板を示す図FIG. 6 is a diagram showing a heatable gas introduction plate according to a third embodiment of the present invention.

【図７】従来のエッチング装置の概略図FIG. 7 is a schematic diagram of a conventional etching apparatus.

【図８】従来のガス導入板を示す図FIG. 8 is a view showing a conventional gas introduction plate.

【符号の説明】[Explanation of symbols]

１ ガス導入孔 ２ ガス導入板 ３ フォーカスリング ４ 排気口 ５ 下部電極 ６ ウエハ ７ 反応室 ８ 圧力制御バルブ ９ 排気ポンプ １０ ガスボンベ １１ マスフローコントローラー １２ 高周波電源 １３ マッチャー １４ パイプ １５ 金属板状体 １６ セラミック板状体 １７ 給電点 DESCRIPTION OF SYMBOLS 1 Gas introduction hole 2 Gas introduction plate 3 Focus ring 4 Exhaust port 5 Lower electrode 6 Wafer 7 Reaction chamber 8 Pressure control valve 9 Exhaust pump 10 Gas cylinder 11 Mass flow controller 12 High frequency power supply 13 Matcher 14 Pipe 15 Metal plate 16 Ceramic plate Body 17 feeding point

Claims (8)

【特許請求の範囲】[Claims] 【請求項１】 ドライエッチングガスの流れを調整し、
ウエハの面内の表面上で活性種の量を均一にする調整部
を備えたことを特徴とする半導体装置の製造装置。1. A method of controlling a flow of a dry etching gas,
An apparatus for manufacturing a semiconductor device, comprising: an adjustment unit for making the amount of active species uniform on a surface in a plane of a wafer. 【請求項２】 前記調整部がガス導入板と圧力制御バル
ブであることを特徴とする請求項１記載の半導体装置の
製造装置。2. The apparatus for manufacturing a semiconductor device according to claim 1, wherein said adjusting unit is a gas introduction plate and a pressure control valve. 【請求項３】 前記調整部のガス導入板の排気口から遠
い領域または近い領域のどちらか一方の領域が他方の領
域より多数のガス導入孔を持つことを特徴とする請求項
２記載の半導体装置の製造装置。3. The semiconductor according to claim 2, wherein one of a region far from the exhaust port of the gas introduction plate of the adjustment unit and a region near the exhaust port has more gas introduction holes than the other region. Equipment manufacturing equipment. 【請求項４】 前記調整部のガス導入板の排気口から遠
い領域または近い領域のどちらか一方の領域が他方の領
域より口径の大きいガス導入孔を持つことを特徴とする
請求項２記載の半導体装置の製造装置。4. The gas inlet plate according to claim 2, wherein one of a region far from the exhaust port of the gas introducing plate and a region near the exhaust port of the adjusting unit has a gas introducing hole having a larger diameter than the other region. Equipment for manufacturing semiconductor devices. 【請求項５】 導入ガスはフルオロカーボン系ガスで１
ｍＴｏｒｒから５００ｍＴｏｒｒであることを特徴とす
る請求項１、２、３、または４記載の半導体装置の製造
装置。5. The introduced gas is a fluorocarbon-based gas.
5. The apparatus for manufacturing a semiconductor device according to claim 1, wherein the pressure is from mTorr to 500 mTorr. 【請求項６】 前記調整部のガス導入板は石英、炭化シ
リコン、窒化アルミニウムであることを特徴とする請求
項２、３、または４記載の半導体装置の製造装置。6. The apparatus for manufacturing a semiconductor device according to claim 2, wherein the gas introduction plate of the adjustment unit is made of quartz, silicon carbide, or aluminum nitride. 【請求項７】 前記調整部のガス導入板は金属を接合に
よりセラミックで挟んだ板にガス導入孔を形成したこと
を特徴とする請求項２記載の半導体装置の製造装置。7. The apparatus for manufacturing a semiconductor device according to claim 2, wherein the gas introduction plate of the adjustment unit has a gas introduction hole formed in a plate in which metal is sandwiched between ceramics by bonding. 【請求項８】 前記金属はタングステン、セラミックは
窒化アルミニウムであることを特徴とする請求項７記載
の半導体装置の製造装置。8. The apparatus according to claim 7, wherein said metal is tungsten, and said ceramic is aluminum nitride.
JP4339097A 1997-02-27 1997-02-27 Apparatus for manufacturing semiconductor device Pending JPH10242118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4339097A JPH10242118A (en) 1997-02-27 1997-02-27 Apparatus for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4339097A JPH10242118A (en) 1997-02-27 1997-02-27 Apparatus for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPH10242118A true JPH10242118A (en) 1998-09-11

Family

ID=12662477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4339097A Pending JPH10242118A (en) 1997-02-27 1997-02-27 Apparatus for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH10242118A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003518734A (en) * 1999-11-15 2003-06-10 ラム リサーチ コーポレーション Plasma processing system with dynamic gas distribution control
JP2008177568A (en) * 2007-01-17 2008-07-31 Psk Inc Substrate treatment device and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003518734A (en) * 1999-11-15 2003-06-10 ラム リサーチ コーポレーション Plasma processing system with dynamic gas distribution control
JP2008177568A (en) * 2007-01-17 2008-07-31 Psk Inc Substrate treatment device and method
TWI394209B (en) * 2007-01-17 2013-04-21 Psk Inc Apparatus and method for treating substrates

Similar Documents

Publication Publication Date Title
JP4180913B2 (en) Top electrode with steps for plasma processing uniformity
JP7176860B6 (en) Semiconductor processing chamber to improve precursor flow
JP6170540B2 (en) Variable temperature method for adjustable electrostatic chuck
KR100352770B1 (en) Topology induced plasma enhancement for etched uniformity improvement
US20040159286A1 (en) Plasma treatment device
JP2001501379A (en) Particle control method and plasma processing chamber
JPS639120A (en) Wafer state for dry etching
JP4123428B2 (en) Etching method
US7452823B2 (en) Etching method and apparatus
KR101240818B1 (en) Method of plasma treatment and plasma treatment apparatus
JPH09129615A (en) Device and method of treatment
JP6085106B2 (en) Plasma processing apparatus and plasma processing method
JPH09223685A (en) Plasma processing apparatus and plasma processing method
JPH10242118A (en) Apparatus for manufacturing semiconductor device
JP4854874B2 (en) Dry etching method
JP2000082698A (en) Plasma processing apparatus
JP4541193B2 (en) Etching method
JPH07307334A (en) Plasma treatment equipment
JPH11317396A (en) Etching system
JPH09275092A (en) Plasma processor
JPH0476495B2 (en)
JPH08162292A (en) Plasma treatment apparatus and control method thereof
JPH08130211A (en) Etching method
JP2000082699A (en) Etching processing apparatus
JPS6388827A (en) Dry etching