JPH10233541A - Magnetism detecting element - Google Patents
Magnetism detecting elementInfo
- Publication number
- JPH10233541A JPH10233541A JP9073724A JP7372497A JPH10233541A JP H10233541 A JPH10233541 A JP H10233541A JP 9073724 A JP9073724 A JP 9073724A JP 7372497 A JP7372497 A JP 7372497A JP H10233541 A JPH10233541 A JP H10233541A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- sintered body
- magnetic field
- change
- sensing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/407—Diluted non-magnetic ions in a magnetic cation-sublattice, e.g. perovskites, La1-x(Ba,Sr)xMnO3
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は，磁気検出素子に関
し，さらに詳しくは各種磁気ヘッド，磁気センサー等と
して有用な磁気検出素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensing element, and more particularly to a magnetic sensing element useful as various magnetic heads, magnetic sensors, and the like.
【０００２】[0002]
【従来の技術】近年，電子機器の小型化，高性能化が急
速に進んでいる。特にコンピューター関連機器に関して
は，ハードディスクの小型化，大容量化に伴って磁気ヘ
ッドの小型化が必要である。2. Description of the Related Art In recent years, miniaturization and high performance of electronic equipment have been rapidly progressing. In particular, with regard to computer-related equipment, it is necessary to reduce the size of the magnetic head as the hard disk becomes smaller and the capacity increases.
【０００３】しかし，従来の磁気ヘッドでは，コイルの
巻線が必要であるために小型化は容易ではない。また，
小型化されると磁気ヘッドと記録媒体の相対速度が低下
して検出速度が小さくなり，したがって検出感度が著し
く低下する。However, in the conventional magnetic head, miniaturization is not easy because a coil winding is required. Also,
When the size is reduced, the relative speed between the magnetic head and the recording medium is reduced, and the detection speed is reduced.
【０００４】そこで，最近になって，従来の磁気ヘッド
の様に磁束の時間変化を検出するのではなく，人工格子
による磁束そのものを検出する磁気抵抗（ＭＲ）素子や
軟磁性線に高周波電流を通電し外部磁界の変化をインピ
ーダンスの変化として検出する磁気インピーダンス素子
が提案されている。Therefore, recently, a high-frequency current is applied to a magnetoresistive (MR) element or a soft magnetic wire which detects the magnetic flux itself due to the artificial lattice, instead of detecting the time change of the magnetic flux as in the conventional magnetic head. There has been proposed a magneto-impedance element that detects a change in an external magnetic field as a change in impedance when energized.
【０００５】[0005]
【発明が解決しようとする課題】しかし，人工格子を作
成するには，高度な薄膜作成技術が必要とされ，コスト
アップの要因となる。However, in order to form an artificial lattice, an advanced thin film forming technique is required, which causes an increase in cost.
【０００６】一方，軟磁性線においても線加工に多くの
工数を必要とし，コストアップの要因となる。また，磁
気インピーダンス素子自体が接地導体をもたないので，
周辺機器に浮遊容量が発生し動作が不安定になりがちで
ある。[0006] On the other hand, soft magnetic wires also require a large number of man-hours for wire processing, which causes an increase in cost. Also, since the magnetic impedance element itself does not have a ground conductor,
Operation is likely to be unstable due to stray capacitance generated in peripheral devices.
【０００７】そのほかアモルファス金属磁性単層膜やパ
ーマロイスパッタ膜等による磁気検出素子の提案もある
が，人工格子同様に製造コストを抑えることは容易では
ない。[0007] In addition, there are proposals for a magnetic sensing element using an amorphous metal magnetic single-layer film, a permalloy sputtered film, or the like, but it is not easy to reduce the manufacturing cost similarly to the artificial lattice.
【０００８】さらに，磁気抵抗をもつ物質としてペロブ
スカイト型Ｍｎ酸化物の提案がある。この物質の単結晶
においては磁気抵抗はキュリー温度近傍で最も大きくな
り，磁気抵抗変化率は９０％以上にも達する。しかし，
数十ｋＯｅもの外部磁界を必要とすることや，製造コス
トも高く実用化には至っていない。また，単結晶薄膜の
提案も考えられるが，薄膜は製造条件により特性が変化
し，その制御は困難であり，かつ薄膜を作成するには高
度な薄膜作成技術が必要とされ，コストアップの要因と
なる。Further, there is a proposal of a perovskite type Mn oxide as a substance having a magnetic resistance. In a single crystal of this substance, the magnetoresistance becomes maximum near the Curie temperature, and the magnetoresistance ratio reaches 90% or more. However,
It requires an external magnetic field of several tens of kOe, has a high manufacturing cost, and has not been put to practical use. It is also possible to propose a single-crystal thin film, but the characteristics of the thin film vary depending on the manufacturing conditions, and it is difficult to control the thin film. Becomes
【０００９】そこで，本発明の技術的課題は，製造コス
トの安価な材料，例えば，焼結体からなり，磁気抵抗素
子に比べ優れた磁界感度を持った磁気検出素子を提供す
ることにある。Accordingly, it is an object of the present invention to provide a magnetic sensing element made of a material having a low manufacturing cost, for example, a sintered body and having a magnetic field sensitivity superior to that of a magnetoresistive element.
【００１０】[0010]
【課題を解決するための手段】本発明では，磁界の変化
をインピーダンスの変化に変換して検出する磁気検出素
子において，一般式 Ｌａ1-x Ｓｒx ＭｎＯ3 （０≦ x
≦１）で示されるペロブスカイト型Ｍｎ酸化物材料から
実質的になることを特徴としている。According to the present invention, there is provided a magnetic detecting element for detecting a change in a magnetic field by converting a change in a magnetic field into a change in impedance, wherein La 1-x Sr x MnO 3 (0 ≦ x
<1) It is characterized by being substantially composed of a perovskite-type Mn oxide material represented by the formula:
【００１１】また，本発明の磁気検出素子では，前記磁
気検出素子において，前記ペロブスカイト型Ｍｎ酸化物
材料は焼結体であることを特徴としている。In the magnetic sensing element according to the present invention, in the magnetic sensing element, the perovskite-type Mn oxide material is a sintered body.
【００１２】また，本発明の磁気検出素子では，前記磁
気検出素子において，前記磁気検出素子は電極を備え，
前記電極を介して直接通電し，インピーダンスの変化を
検出することを特徴としている。In the magnetic sensing element of the present invention, in the magnetic sensing element, the magnetic sensing element has an electrode;
It is characterized in that a current is directly passed through the electrode and a change in impedance is detected.
【００１３】さらに，本発明によれば，一般式Ｌａ1-x
Ｓｒx ＭｎＯ3 （０≦ｘ≦１）で示されるぺロブスカイ
ト型Ｍｎ酸化物の焼結体からなり，前記焼結体の焼結密
度が６０〜９０％であり，磁界の変化を抵抗の変化に変
換して検出することを特徴とする磁気検出素子が得られ
る。Further, according to the present invention, the general formula La 1-x
It is composed of a sintered body of perovskite type Mn oxide represented by Sr x MnO 3 (0 ≦ x ≦ 1), and the sintered body has a sintered density of 60 to 90%. Thus, a magnetic detection element characterized in that the magnetic field is detected by converting into a magnetic field is obtained.
【００１４】[0014]
【発明の実施の形態】以下，本発明の実施の形態につい
て説明する。Embodiments of the present invention will be described below.
【００１５】（第１の実施の形態）図１は本発明の第１
の実施の形態による磁気検出素子の概略を示す斜視図で
ある。図１に示すように，磁気検出素子１０は，Ｌａ
1-x Ｓｒx ＭｎＯ3 （但し，０≦ｘ≦１）で示されるペ
ロブスカイト型Ｍｎ酸化物材料からなる焼結体１を本体
としている。焼結体素子は、所定に秤量したＬａ
2 Ｏ3 ，ＳｒＣＯ3 ，Ｍｎ3Ｏ4 の各粉末を通常の粉末
冶金法を用いて焼成した。仮焼は１１００℃で５時間、
１３５０℃で５時間行った。得られた焼結体を厚さ２．
４３ｍｍ，幅２．４３ｍｍ，長さ４．５４ｍｍの角柱形
状に切断・研磨した。さらに，焼結体１の両端面に，銀
電極２を形成して磁気検出素子１０が完成される。FIG. 1 shows a first embodiment of the present invention.
FIG. 3 is a perspective view schematically showing a magnetic sensing element according to the embodiment. As shown in FIG. 1, the magnetic detecting element 10
The main body is a sintered body 1 made of a perovskite-type Mn oxide material represented by 1-x Sr x MnO 3 (where 0 ≦ x ≦ 1). The sintered body element has a predetermined weight of La
Each powder of 2 O 3 , SrCO 3 , and Mn 3 O 4 was fired using a usual powder metallurgy method. Calcination at 1100 ° C for 5 hours
Performed at 1350 ° C. for 5 hours. The thickness of the obtained sintered body is 2.
It was cut and polished into a prism shape of 43 mm, width 2.43 mm, and length 4.54 mm. Further, silver electrodes 2 are formed on both end surfaces of the sintered body 1 to complete the magnetic sensing element 10.
【００１６】このような構成の磁気検出素子１０におい
て，端部に形成された銀電極２を介して高周波の交流電
流を直接通電するとインピーダンスが生じる。その際
に，磁気検出素子１０に，外部から磁界が印加されると
磁気検出素子１０のインピーダンス変化が生じる。この
結果，磁気検出素子は，外部磁界の変化をインピーダン
ス変化として検出することができる。In the magnetic detecting element 10 having such a configuration, when a high-frequency alternating current is directly applied through the silver electrode 2 formed at the end, an impedance is generated. At this time, when a magnetic field is externally applied to the magnetic detection element 10, the impedance of the magnetic detection element 10 changes. As a result, the magnetic detection element can detect a change in the external magnetic field as an impedance change.
【００１７】次に，本発明の実施の形態による磁気検出
素子を用いた磁界の測定動作の具体例を示す。Next, a specific example of a magnetic field measuring operation using the magnetic sensing element according to the embodiment of the present invention will be described.
【００１８】図１に示される磁気検出素子１０におい
て，焼結体の化学組成の異なる試料１乃至４に，矢印３
で示される方向，即ち，磁気検出素子の両端面間に２０
０ＭＨｚ，１ＧＨｚの交流電流を通電し，電流と垂直方
向に，矢印４に示すように，６５０Ｏｅの外部磁界を印
加して，インピーダンスを測定した。その結果，下記表
１に示す様なインピーダンス変化が得られた。In the magnetic sensing element 10 shown in FIG. 1, samples 1 to 4 having different sintered body chemical compositions
, That is, between the two end faces of the magnetic sensing element.
An alternating current of 0 MHz and 1 GHz was applied, and an external magnetic field of 650 Oe was applied in a direction perpendicular to the current, as indicated by an arrow 4, to measure the impedance. As a result, impedance changes as shown in Table 1 below were obtained.
【００１９】尚，インピーダンスの変化率（％）は，磁
界が無い場合のインピーダンスンスをＺ（０），磁界が
ある場合のインピーダンスをＺ（Ｈ）としたとき，次の
数１式で表わされる。The rate of change (%) of the impedance is expressed by the following equation, where Z (0) is the impedance when there is no magnetic field, and Z (H) is the impedance when there is a magnetic field. .
【００２０】[0020]
【数１】 (Equation 1)
【００２１】一方，比較試料としてＬａ0.7 Ｓｒ0.3 Ｍ
ｎＯ3 の焼結体に直流電流を通電し，電流と垂直方向に
１０ｋＯｅの外部磁界を印加し磁気抵抗素子として用い
た。この結果も併せて下記表１に示した。なお，抵抗の
変化率（％）は次の数２式で表わした。ただし，磁界が
無い場合の抵抗をＲ（０），磁界がある場合の抵抗をＲ
（Ｈ）とした。On the other hand, as a comparative sample, La 0.7 Sr 0.3 M
A direct current was passed through the sintered body of nO 3 , and an external magnetic field of 10 kOe was applied in a direction perpendicular to the current to use as a magnetoresistive element. The results are also shown in Table 1 below. The rate of change of resistance (%) was expressed by the following equation (2). Here, the resistance in the absence of a magnetic field is R (0), and the resistance in the presence of a magnetic field is R (0).
(H).
【００２２】[0022]
【数２】 (Equation 2)
【００２３】[0023]
【表１】 [Table 1]
【００２４】上記表１から明らかなように，磁界による
インピーダンス変化率（％）をもとに測定した本発明の
実施の形態による磁気検出素子は，抵抗の変化率（％）
をもとにした比較試料よりも明らかに高感度であり，特
性が優れていることが判る。As is apparent from Table 1, the magnetic sensing element according to the embodiment of the present invention, which is measured based on the impedance change rate (%) due to the magnetic field, has a resistance change rate (%).
It is clear that the sensitivity is clearly higher than that of the comparative sample based on, and the characteristics are excellent.
【００２５】（第２の実施の形態）図２は本発明の第２
の実施の形態による磁気検出素子を示す図である。第２
の実施の形態による磁気検出素子として磁気抵抗素子２
０を例示する。図１に示すように，磁気抵抗素子２０
は，矩形板状の焼結体１１の一面両端に銀電極１２を形
成したものである。焼結体１１は，Ｌａ0.7 Ｓｒ0.3 Ｍ
ｎＯ3 の組成を有している。この焼結体は，所定比に秤
量したＬａ2 Ｏ3 ，ＳｒＣＯ3 ，Ｍｎ3 Ｏ4 各粉末を通
常の粉末冶金法を用いて焼成した。仮焼は１１００℃で
５時間，仮焼後の粉砕粒径は０．５μｍと１．３μｍの
２種類とし，焼結は１１００〜１３５０℃で５時間行っ
た。このように粉砕粒径と焼結条件を変えることによ
り，種々の密度の焼結体を得た。密度は，アルキメデス
法にて測定した。得られた焼結体１１を厚さ１．０ｍ
ｍ，幅３．０ｍｍ，長さ１０ｍｍに切断・研磨し，上面
に銀電極１２を形成し，磁気抵抗素子２０とした。この
磁気抵抗素子２０に２ｍＡの直流電流を電流計１３と直
列に通電し，電流と垂直方向１５に６００ Ｏｅの外部
磁界を印加し抵抗変化率を測定したところ下記表２に示
す様な磁気抵抗変化が得られた。変化率は，磁界が無い
場合の抵抗をＲ（０），磁界がある場合の抵抗をＲ
（Ｈ）としたとき，次の数３式で表わす。尚，符号１４
は電圧計を示している。(Second Embodiment) FIG. 2 shows a second embodiment of the present invention.
FIG. 3 is a diagram showing a magnetic sensing element according to the embodiment. Second
Element 2 as the magnetic sensing element according to the embodiment.
0 is exemplified. As shown in FIG.
Has silver electrodes 12 formed on both ends of one surface of a rectangular plate-shaped sintered body 11. The sintered body 11 is made of La 0.7 Sr 0.3 M
It has a composition of nO 3 . This sintered body was fired using La 2 O 3 , SrCO 3 , and Mn 3 O 4 powders weighed to a predetermined ratio using a normal powder metallurgy method. The calcining was performed at 1100 ° C. for 5 hours, the pulverized particle size after calcining was set to 0.5 μm and 1.3 μm, and the sintering was performed at 1100 to 1350 ° C. for 5 hours. By changing the crushed particle size and the sintering conditions in this way, sintered bodies of various densities were obtained. The density was measured by the Archimedes method. The obtained sintered body 11 has a thickness of 1.0 m.
m, a width of 3.0 mm and a length of 10 mm were cut and polished. A DC current of 2 mA was applied to the magnetoresistive element 20 in series with the ammeter 13, an external magnetic field of 600 Oe was applied in a direction perpendicular to the current, and the resistance change rate was measured. A change was obtained. The rate of change is expressed as R (0) when there is no magnetic field, and R (0) when there is a magnetic field.
(H), it is expressed by the following equation (3). Note that reference numeral 14
Indicates a voltmeter.
【００２６】[0026]
【数３】 (Equation 3)
【００２７】[0027]
【表２】 [Table 2]
【００２８】以上，説明したように，本発明の第２の実
施の形態による磁気抵抗素子に直流電流を通電し，この
素子に外部から弱磁界を印加すると素子の抵抗が急激に
減少する。この結果，磁気抵抗素子は，外部磁界の変化
を抵抗変化として検出することが可能である。As described above, when a DC current is applied to the magnetoresistive element according to the second embodiment of the present invention and a weak magnetic field is applied to this element from the outside, the resistance of the element rapidly decreases. As a result, the magnetoresistive element can detect a change in the external magnetic field as a change in resistance.
【００２９】[0029]
【発明の効果】以上の説明のように，本発明によれば，
磁気抵抗素子として考えられていたＬａ1-x Ｓｒx Ｍｎ
Ｏ3 （但し，０≦ x≦１）において，製造コストの安価
な焼結体で，磁気抵抗素子に比べ一桁大きな磁界感度を
持った磁気検出素子が提供できる。As described above, according to the present invention,
La 1-x Sr x Mn considered as a magnetoresistive element
When O 3 (where 0 ≦ x ≦ 1), a magnetic sensing element having a magnetic field sensitivity one order of magnitude higher than that of a magnetoresistive element can be provided with a sintered body having a low manufacturing cost.
【００３０】また，本発明によれば，Ｌａ1-x Ｓｒx Ｍ
ｎＯ3 （０≦ X≦１）のペロブスカイト型Ｍｎ酸化物に
おいて，製造コストの安価な焼結体で，かつ焼結密度を
６０〜９０％と小さくした焼結体において，大きな磁界
を必要とせず，しかも焼結密度約１００％の磁気抵抗素
子に比べ，２〜４倍大きな磁界感度を持った磁気検出素
子としての磁気抵抗素子を提供することができる。According to the present invention, La 1-x Sr x M
In a perovskite-type Mn oxide of nO 3 (0 ≦ X ≦ 1), a large magnetic field is not required for a sintered body having a low manufacturing cost and a sintered density as small as 60 to 90%. In addition, it is possible to provide a magnetic resistance element as a magnetic detection element having a magnetic field sensitivity that is two to four times larger than that of a magnetic resistance element having a sintered density of about 100%.
【図１】本発明の第１の実施の形態による磁気検出素子
の概略を示す斜視図である。FIG. 1 is a perspective view schematically showing a magnetic sensing element according to a first embodiment of the present invention.
【図２】本発明の第２の実施の形態による磁気検出素子
としての磁気抵抗素子の概略を示す斜視図である。FIG. 2 is a perspective view schematically showing a magnetoresistive element as a magnetic detecting element according to a second embodiment of the present invention.
１，１１ 焼結体 ２，１２ 銀電極 ３ 電流方向を示す矢印 ４，１５ 磁界方向を示す矢印 １０ 磁気検出素子 １３ 電流計 １４ 電圧計 ２０ 磁気抵抗素子 DESCRIPTION OF SYMBOLS 1,11 Sintered body 2,12 Silver electrode 3 Arrow showing current direction 4,15 Arrow showing magnetic field direction 10 Magnetic detecting element 13 Ammeter 14 Voltmeter 20 Magnetoresistive element
Claims (4)
換して検出する磁気検出素子において，一般式 Ｌａ
1-x Ｓｒx ＭｎＯ3 （０≦ｘ≦１）で示されるペロブス
カイト型Ｍｎ酸化物材料から実質的になることを特徴と
する磁気検出素子。1. A magnetic detecting element for converting a change in a magnetic field into a change in impedance and detecting the change, the general formula La
A magnetic sensing element substantially consisting of a perovskite-type Mn oxide material represented by 1-x Sr x MnO 3 (0 ≦ x ≦ 1).
前記ペロブスカイト型Ｍｎ酸化物材料は焼結体であるこ
とを特徴とする磁気検出素子。2. The magnetic sensing element according to claim 1, wherein
A magnetic sensing element, wherein the perovskite-type Mn oxide material is a sintered body.
前記磁気検出素子は電極を備え，前記電極を介して直接
通電し，インピーダンスの変化を検出することを特徴と
する磁気検出素子。3. The magnetic sensing element according to claim 1, wherein
The magnetic detection element includes an electrode, and a current is directly supplied through the electrode to detect a change in impedance.
≦１）で示されるぺロブスカイト型Ｍｎ酸化物の焼結体
からなり，前記焼結体の焼結密度が６０〜９０％であ
り，磁界の変化を抵抗の変化に変換して検出することを
特徴とする磁気検出素子。4. The general formula La 1-x Sr x MnO 3 (0 ≦ x
≦ 1) is formed from a sintered body of a perovskite-type Mn oxide, wherein the sintered body has a sintering density of 60 to 90%, and a change in magnetic field is converted into a change in resistance and detected. Characteristic magnetic sensing element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9073724A JPH10233541A (en) | 1996-12-18 | 1997-03-26 | Magnetism detecting element |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33818496 | 1996-12-18 | ||
| JP8-338184 | 1996-12-18 | ||
| JP9073724A JPH10233541A (en) | 1996-12-18 | 1997-03-26 | Magnetism detecting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10233541A true JPH10233541A (en) | 1998-09-02 |
Family
ID=26414875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9073724A Withdrawn JPH10233541A (en) | 1996-12-18 | 1997-03-26 | Magnetism detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10233541A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100346135B1 (en) * | 1999-10-02 | 2002-08-01 | 한국과학기술연구원 | Mono layered granular structure type thin film for magnetic sensor |
| US7224257B2 (en) * | 2003-12-25 | 2007-05-29 | Denso Corporation | Physical quantity sensing element having improved structure suitable for electrical connection and method of fabricating same |
| WO2010107073A1 (en) * | 2009-03-19 | 2010-09-23 | 株式会社村田製作所 | Magnetic impedance element, and magnetic sensor using same |
-
1997
- 1997-03-26 JP JP9073724A patent/JPH10233541A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100346135B1 (en) * | 1999-10-02 | 2002-08-01 | 한국과학기술연구원 | Mono layered granular structure type thin film for magnetic sensor |
| US7224257B2 (en) * | 2003-12-25 | 2007-05-29 | Denso Corporation | Physical quantity sensing element having improved structure suitable for electrical connection and method of fabricating same |
| WO2010107073A1 (en) * | 2009-03-19 | 2010-09-23 | 株式会社村田製作所 | Magnetic impedance element, and magnetic sensor using same |
| JP5375951B2 (en) * | 2009-03-19 | 2013-12-25 | 株式会社村田製作所 | Magneto-impedance element and magnetic sensor using the same |
| US8710835B2 (en) | 2009-03-19 | 2014-04-29 | Murata Manufacturing Co., Ltd. | Magnetic impedance element and magnetic sensor using the same |
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|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
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