JPH1022193A - Semiconductor device manufacturing drawing device and drawing method - Google Patents
Semiconductor device manufacturing drawing device and drawing methodInfo
- Publication number
- JPH1022193A JPH1022193A JP8171914A JP17191496A JPH1022193A JP H1022193 A JPH1022193 A JP H1022193A JP 8171914 A JP8171914 A JP 8171914A JP 17191496 A JP17191496 A JP 17191496A JP H1022193 A JPH1022193 A JP H1022193A
- Authority
- JP
- Japan
- Prior art keywords
- active filter
- light
- exposure amount
- exposure value
- controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、描画装置に関す
る。[0001] The present invention relates to a drawing apparatus.
【０００２】[0002]
【従来の技術】従来の光描画装置は、光（レーザー）発
生装置と、透過・反射光学系、レンズにより、図４に示
すような構造に形成されている。すなわち図中１０の光
発生装置により描画に必要な光１１を発生し、透過・反
射光光学系１２〜１９を通過し、対物レンズ２１により
光の集光を行い、描画ステージ２３に誘導する。2. Description of the Related Art A conventional optical drawing apparatus has a light (laser) generator, a transmission / reflection optical system, and a lens, and has a structure as shown in FIG. That is, the light 11 required for drawing is generated by the light generating device 10 in the figure, the light 11 passes through the transmission / reflection light optical systems 12 to 19, is condensed by the objective lens 21, and is guided to the drawing stage 23.
【０００３】[0003]
【発明が解決しようとする課題】ところで上記光描画装
置では、描画直前に対物レンズ後の露光量が所望の露光
量となるように光出力装置の調整を行い、描画中は光出
力装置の出力が一定となるように制御されるだけであ
り、対物レンズ後の描画露光量の制御は行われてはいな
い。このため、露光量不均一が生じ基板上での線幅不均
一を引き起こすことになる。By the way, in the above-mentioned optical drawing apparatus, the light output apparatus is adjusted immediately before drawing so that the exposure amount after the objective lens becomes a desired exposure amount, and the output of the light output apparatus is adjusted during drawing. Is controlled only to be constant, and the control of the drawing exposure amount after the objective lens is not performed. For this reason, the exposure dose becomes non-uniform, which causes non-uniform line width on the substrate.
【０００４】また、描画に続く処理により基板面内に線
幅不均一が引き起こされることもある。本発明は上記問
題点に鑑み、光路の違いによって起こる露光量の不均一
の影響や、描画に続く処理によって引き起こされる基板
上での線幅不均一を取り除き、均一性良い線幅を実現す
る描画装置を提供することを目的とする。[0004] In addition, processing subsequent to drawing may cause non-uniform line width in the substrate surface. In view of the above problems, the present invention eliminates the effects of non-uniformity of the exposure amount caused by the difference in the optical path and the non-uniformity of the line width on the substrate caused by the processing subsequent to the drawing, and realizes the uniform line width drawing. It is intended to provide a device.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、本発明の露光装置では、光発生装置と、基板を載置
したステージと、前記光発生装置と前記ステージとの間
に形成された第１の光路と、前記第１の光路中に設置さ
れるアクティブフィルタと、前記第１の光路中におい
て、前記アクティブフィルタと前記ステージとの間に配
置され、前記ステージに対向し、かつ前記出力された光
を集光する対物レンズと、前記第１の光路中において、
前記アクティブフィルタと前記対物レンズとの間に配置
され、かつ前記対物レンズに対向するハーフミラーと、
前記ハーフミラーにより分割され、このハーフミラーと
前記アクティブフィルタとの間に形成された第２の光路
と、前記第２の光路中に配置される露光量測定装置とを
具備し、前記ハーフミラーにより分割された光量を前記
露光量測定装置により測定しながら描画露光量を前記ア
クティブフィルタにより補正、制御することを特徴とす
る。In order to solve the above problems, in an exposure apparatus according to the present invention, a light generating device, a stage on which a substrate is mounted, and a stage formed between the light generating device and the stage are provided. A first optical path, an active filter installed in the first optical path, and, in the first optical path, disposed between the active filter and the stage, facing the stage, and An objective lens for condensing the output light, and in the first optical path,
A half mirror disposed between the active filter and the objective lens, and facing the objective lens;
A second optical path divided by the half mirror and formed between the half mirror and the active filter; and an exposure measuring device disposed in the second optical path. The exposure light amount is corrected and controlled by the active filter while measuring the divided light amount by the light exposure amount measuring device.
【０００６】本発明によれば露光量測定装置（光量モニ
ター）を用いて、描画最中の描画露光量を対物レンズ直
前の光路中で測定しながら、その測定値に基づいた制御
をすることになるので実際の描画露光量の制御が行われ
ることになる。つまり描画最中に描画露光量が増加する
場合には、露光量を減じるために光束の遮蔽率を多くす
るように、また描画露光量が減少する場合には露光量を
増加させるために光束の遮蔽率を少なくするように光路
中のアクティブ・フィルタを制御し、実際の描画露光量
の制御を行うことにする。この操作を時間的な遅延も考
慮して行うことにより基板上線幅の均一性を向上させる
ことが可能となる。According to the present invention, while controlling the drawing exposure amount during drawing in the optical path immediately before the objective lens by using the exposure amount measuring device (light amount monitor), the control based on the measured value is performed. Therefore, the actual drawing exposure amount is controlled. In other words, if the drawing exposure amount increases during drawing, the luminous flux blocking rate should be increased to reduce the exposure amount, and if the drawing exposure amount decreases, the luminous flux should be increased to increase the exposure amount. The active filter in the optical path is controlled so as to reduce the blocking ratio, and the actual drawing exposure amount is controlled. By performing this operation in consideration of a time delay, the uniformity of the line width on the substrate can be improved.
【０００７】また、描画処理・露光処理の基板上の線幅
分布データをもとにして、描画位置による露光量対応表
（DOSE Table）を作成する。前記対応表（DOSE Table）
を参照しながら、露光量が不足している箇所ではアクテ
ィブ・フィルタによる光束遮蔽率を少なくし、露光量が
多い箇所では遮蔽率を多くするように制御することによ
りプロセスにより引き起こされる線幅の不均一も制御さ
れ、基板上線幅の均一性が向上することになる。[0007] Based on the line width distribution data on the substrate in the drawing process and the exposure process, an exposure amount correspondence table (DOSE table) according to the drawing position is created. Correspondence table (DOSE Table)
In reference to the above, by controlling so that the light flux shielding rate by the active filter is reduced in the portion where the exposure amount is insufficient, and by increasing the shielding ratio in the portion where the exposure amount is large, the line width caused by the process is reduced. The uniformity is also controlled, and the uniformity of the line width on the substrate is improved.
【０００８】[0008]
【発明の実施の形態】以下、本発明の第１の実施例であ
る描画装置を図１を参照して説明する。この実施例の光
描画装置は従来と同一の光発生装置１０、反射光学系１
５、１７、１９、透過光学系１２、１４、１９、ＡＯＭ
１３、レンズ１８、２１、４１、４３、ズーム系１６に
より構成されている。ただし対物レンズ２１直前のハー
フ・ミラー１９から反射される光量を露光量測定装置
（フォト・ダイオード）２０により測定し、制御遅延時
間を考慮して、レンズ４１の焦点に設けた液晶光学系４
２により光束遮蔽率の制御を行うことにより、実際の描
画露光量を制御することにする。尚、図２に示した凸レ
ンズ３１、３３とアクティブ・フィルタ（液晶光学系）
３２の組み合わせは図中ａ〜ｈのどの位置に設置しても
良く、凸レンズ３１、３３の焦点にアクティブ・フィル
タ（液晶光学系）３２を配置し透過光量の制御を行うこ
とが大切である。また遮蔽率は上下方向の制御が可能で
なければならないので液晶光学系の遮蔽可能領域の中間
値を平常の設定値とする。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A drawing apparatus according to a first embodiment of the present invention will be described below with reference to FIG. The optical drawing apparatus of this embodiment is the same as the conventional light generating apparatus 10 and the reflecting optical system 1.
5, 17, 19, transmission optical system 12, 14, 19, AOM
13, a lens 18, 21, 41, 43 and a zoom system 16. However, the amount of light reflected from the half mirror 19 immediately before the objective lens 21 is measured by an exposure amount measuring device (photodiode) 20, and the liquid crystal optical system 4 provided at the focal point of the lens 41 in consideration of the control delay time.
The actual drawing exposure amount is controlled by controlling the luminous flux shielding rate by the method 2. Incidentally, the convex lenses 31 and 33 and the active filter (liquid crystal optical system) shown in FIG.
The combination of 32 may be installed at any position of a to h in the figure, and it is important to arrange an active filter (liquid crystal optical system) 32 at the focal point of the convex lenses 31 and 33 to control the amount of transmitted light. Further, since the shielding rate must be able to be controlled in the vertical direction, an intermediate value of the shielding area of the liquid crystal optical system is set as a normal setting value.
【０００９】以上、第１の実施例の描画装置では、反射
光学系（ポリゴンミラー）１７で光束をスキャンするこ
とにより引き起こされる光路差の違いによる露光量の変
化、反射面の違い（反射率の違い）により引き起こされ
る露光量の変化を露光量測定装置（フォト・ダイオー
ド）２６により測定し、描画最中に液晶光学系４２を制
御することにより露光量の制御が行われるため描画露光
量の均一性が向上する。従って、描画・露光した基板上
の線幅の均一性が向上することになる。As described above, in the drawing apparatus of the first embodiment, the change in the exposure amount due to the difference in the optical path caused by the scanning of the light beam by the reflection optical system (polygon mirror) 17 and the difference in the reflection surface (the difference in the reflectance). The change of the exposure amount caused by the difference is measured by the exposure amount measuring device (photodiode) 26 and the exposure amount is controlled by controlling the liquid crystal optical system 42 during the drawing, so that the drawing exposure amount is uniform. The performance is improved. Therefore, the uniformity of the line width on the drawn / exposed substrate is improved.
【００１０】次ぎに本発明の第２の実施例である描画装
置を図２を参照して説明する。図１に示した実施例と同
一部分には同一符号を付して説明は省略する。この実施
例では、上記実施例の機能だけを用いて描画・露光し、
処理した基板上の位置と線幅の対応表を作成する。この
とき描画・露光後の処理により基板上の線幅不均一が起
こることがある。また液晶光学系４２の平常の設定値を
変えて露光量を振ってみて描画・露光、処理し線幅と露
光量の対応表も作成し、最終的には基板上均一な線幅を
実現させる為の位置と露光量（遮蔽率）の対応表（DOSE
Table）４５を作成することにする。Next, a drawing apparatus according to a second embodiment of the present invention will be described with reference to FIG. The same parts as those of the embodiment shown in FIG. In this embodiment, drawing and exposure are performed using only the functions of the above-described embodiment,
A correspondence table between the positions on the processed substrate and the line width is created. At this time, non-uniform line width on the substrate may occur due to processing after drawing / exposure. Also, by changing the normal setting value of the liquid crystal optical system 42 and varying the exposure amount, drawing / exposure and processing are performed, and a correspondence table of the line width and the exposure amount is created, and finally a uniform line width on the substrate is realized. Table (DOSE) for exposure position (exposure ratio)
Table) 45 will be created.
【００１１】以上、本発明の第２の実施例では、基板上
の位置と露光量対応表４５をもとに液晶光学系４２の遮
蔽率を制御し描画・露光を行うことにより、描画後の処
理により基板上の線幅不均一を引き起こすことなく、線
幅均一性の向上が可能となる。As described above, in the second embodiment of the present invention, by controlling the shielding ratio of the liquid crystal optical system 42 based on the position on the substrate and the exposure amount correspondence table 45 to perform the drawing and exposure, The processing enables the line width uniformity to be improved without causing the line width unevenness on the substrate.
【００１２】[0012]
【発明の効果】本発明によれば、アクティブ・フィルタ
を用いて描画中の露光量の制御を行うことにより基板上
の線幅均一性を向上させることが可能となる。According to the present invention, the uniformity of the line width on the substrate can be improved by controlling the exposure amount during writing using the active filter.
【図１】本発明の第１の実施例の描画装置を示す概略図FIG. 1 is a schematic diagram showing a drawing apparatus according to a first embodiment of the present invention.
【図２】本発明の第２の実施例の描画装置を示す概略図FIG. 2 is a schematic diagram showing a drawing apparatus according to a second embodiment of the present invention.
【図３】本発明の実施例中のアクティブフィルタと凸レ
ンズの組み合わせを説明するための図FIG. 3 is a diagram for explaining a combination of an active filter and a convex lens in an embodiment of the present invention.
【図４】従来の描画装置を示す概略図FIG. 4 is a schematic diagram showing a conventional drawing apparatus.
１０ 光発生装置 １１ 光路 １２、１４ 透過レンズ系、 １３ 音響光学素子ＡＯＭ、 １５ ステアリングミラー １６ ズーム系光学素子、 １７ ポリゴン １８ ｆ−Θレンズ、 １９ ハーフミラ− ２０ 露光量測定装置 ２１ 対物レンズ ２２ 基板 ２３ ステージ ４１、４３ 凸レンズ ４２ アクティブフィルタ ４４ ＯＰアンプ ４５ 露光量対応表 DESCRIPTION OF SYMBOLS 10 Light generation apparatus 11 Optical path 12, 14 Transmission lens system, 13 Acoustic optical element AOM, 15 Steering mirror 16 Zoom system optical element, 17 Polygon 18 f- lens, 19 Half mirror 20 Exposure amount measuring apparatus 21 Objective lens 22 Substrate 23 Stage 41, 43 Convex lens 42 Active filter 44 OP amplifier 45 Exposure amount correspondence table
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/30 ５４１Ｅ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical indication H01L 21/30 541E
Claims (4)
の光路と、 前記第１の光路中に設置されるアクティブフィルタと、 前記第１の光路中において、前記アクティブフィルタと
前記ステージとの間に配置され、前記ステージに対向
し、かつ前記出力された光を集光する対物レンズと、 前記第１の光路中において、前記アクティブフィルタと
前記対物レンズとの間に配置され、かつ前記対物レンズ
に対向するハーフミラーと、 前記ハーフミラーにより分割され、このハーフミラーと
前記アクティブフィルタとの間に形成された第２の光路
と、前記第２の光路中に配置される露光量測定装置とを
具備し、 前記ハーフミラーにより分割された光量を前記露光量測
定装置により測定しながら描画露光量を前記アクティブ
フィルタにより補正、制御することを特徴とする半導体
装置製造用描画装置。A light-generating device, a stage on which a substrate is mounted, and a first light-emitting device formed between the light-generating device and the stage.
And an active filter installed in the first optical path; and an optical filter disposed in the first optical path between the active filter and the stage, facing the stage, and outputting the An objective lens for condensing light; a half mirror disposed between the active filter and the objective lens in the first optical path and facing the objective lens; A second optical path formed between a half mirror and the active filter; and an exposure measuring device disposed in the second optical path; A drawing apparatus for manufacturing a semiconductor device, wherein a drawing exposure amount is corrected and controlled by the active filter while being measured by a measuring apparatus.
であることを特徴とする請求項１記載の半導体装置製造
用描画装置。2. The drawing apparatus according to claim 1, wherein the active filter is a liquid crystal optical element.
装置製造用描画装置において、前記対物レンズ直前に設
置された前記ハーフミラーから反射された光量を前記露
光量測定装置により測定しながら描画露光量を前記アク
ティブフィルタにより補正、制御することを特徴とする
描画方法。3. The drawing apparatus for manufacturing a semiconductor device according to claim 1, wherein drawing is performed while measuring the amount of light reflected from the half mirror disposed immediately before the objective lens by the exposure amount measuring apparatus. A drawing method, wherein an exposure amount is corrected and controlled by the active filter.
描画位置と露光量との対応関係を示す表を作成する工程
をさらに有することを特徴とする請求項３記載の描画方
法。4. Based on line width distribution data on a substrate,
4. The drawing method according to claim 3, further comprising a step of creating a table indicating a correspondence between the drawing position and the exposure amount.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8171914A JPH1022193A (en) | 1996-07-02 | 1996-07-02 | Semiconductor device manufacturing drawing device and drawing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8171914A JPH1022193A (en) | 1996-07-02 | 1996-07-02 | Semiconductor device manufacturing drawing device and drawing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1022193A true JPH1022193A (en) | 1998-01-23 |
Family
ID=15932184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8171914A Pending JPH1022193A (en) | 1996-07-02 | 1996-07-02 | Semiconductor device manufacturing drawing device and drawing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1022193A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7023529B2 (en) | 2003-01-09 | 2006-04-04 | Samsung Electronics Co., Ltd. | Method for overlay measurement in exposure process |
-
1996
- 1996-07-02 JP JP8171914A patent/JPH1022193A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7023529B2 (en) | 2003-01-09 | 2006-04-04 | Samsung Electronics Co., Ltd. | Method for overlay measurement in exposure process |
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