JPH10219436A

JPH10219436A - Vacuum vapor deposition system

Info

Publication number: JPH10219436A
Application number: JP3850197A
Authority: JP
Inventors: Fumio Matsumura; 文雄松村
Original assignee: Toyo Communication Equipment Co Ltd
Current assignee: Toyo Communication Equipment Co Ltd
Priority date: 1997-02-06
Filing date: 1997-02-06
Publication date: 1998-08-18

Abstract

PROBLEM TO BE SOLVED: To form thick deposited films with a simple system constitution and to form the vapor deposited films which is uniform in refractive index even on a large rugged surface for vapor deposition with a vacuum vapor deposition system for depositing a material for vapor deposition by evaporation on the surface of the object for vapor deposition in a vacuum vessel. SOLUTION: The vapor deposited films are formed by heating and evaporating the material 6 for vapor deposition in a vapor deposition source arranged in the upper part in the vacuum vessel 1 by an electron beam 7 emitted from an electron gun 3 and adhering the evaporated particles of the material for vapor deposition on the front surface 4a of a substrate 4 installed in the lower part in the vacuum vessel 1. Such trouble that the vapor deposited films are peeled from the substrate by their own weight does not arise and, therefore, the vapor deposited films having a desired thickness are easily formed even if the material for vapor deposition having a poor adhesion property is used on the substrate. The particles of the material for vapor deposition splashing in random directions at the time of the evaporation are made to impinge upon the substrate 4 in a state in which a random property of the advancing direction is held and, therefore, the thick vapor deposited films having the uniform refractive index are formed even on the surface for vapor deposition having the large ruggedness.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、真空容器内にて蒸
着材料を蒸発させて基板などの被蒸着物の表面に蒸発粒
子を付着させることにより蒸着膜を形成する真空蒸着装
置に関し、特に被蒸着物に対する密着力の小さいアモル
ファス誘電体などの厚い蒸着膜の形成に適した真空蒸着
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum evaporation apparatus for forming an evaporation film by evaporating an evaporation material in a vacuum vessel and attaching evaporation particles to a surface of an object such as a substrate. The present invention relates to a vacuum evaporation apparatus suitable for forming a thick evaporation film such as an amorphous dielectric having a small adhesion to an evaporation object.

【０００２】[0002]

【従来の技術】従来の真空蒸着装置として、図２に示す
電子ビーム蒸着装置が知られている。この電子ビーム蒸
着装置は、真空容器１１内の下部に配置した蒸着源１２
内の蒸着材料１３を電子銃１４より発する電子ビーム１
５で加熱し蒸発させ、真空容器１１内の上部に配置した
被蒸着物である基板１６の被蒸着面１６ａに蒸発粒子を
付着させることにより蒸着膜を形成する。2. Description of the Related Art An electron beam evaporation apparatus shown in FIG. 2 is known as a conventional vacuum evaporation apparatus. The electron beam evaporation apparatus includes an evaporation source 12 disposed at a lower portion in a vacuum vessel 11.
Electron beam 1 emitting vapor deposition material 13 from electron gun 14
The film is heated and evaporated in step 5, and evaporated particles are deposited on the surface 16a of the substrate 16 which is the object to be deposited, which is disposed in the upper portion of the vacuum vessel 11, to form a film.

【０００３】[0003]

【発明が解決しようとする課題】しかし、上述した従来
の電子ビーム蒸着装置においては、基板１６の被蒸着面
１６ａを下方に向けた状態で、その下方に配置された蒸
着源１２から飛来する蒸発粒子を付着させて蒸着膜を形
成する構造上、蒸発粒子は重力に反抗して上昇すること
となるから、蒸発粒子が基板１６に付着する際の運動エ
ネルギーが小さいため、蒸着膜の緻密度が低く基板６に
対する密着力が弱い。そのため、厚い蒸着膜を形成しよ
うとすると蒸着膜がその自重により基板１６から剥離
し、クラックなどが発生し易い。一方、この欠点を補う
方法として、イオンビームアシスト法やイオンプレーテ
ィング法などが従来より知られており、蒸着材料粒子を
強制的に加速して基板に衝突させる手段を用いて蒸着す
るので、厚い蒸着膜を形成することが可能である。しか
し、イオンビームアシスト法やイオンプレーティング法
による真空蒸着装置では、蒸着材料粒子が基板に衝突す
る際の方向性と運動エネルギーが非常に大きいため、異
方性の大きい膜が形成され易く、石英光導波路などに要
求される屈折率の均一なアモルファス誘電体膜の形成に
は適さない。例えば、図３は光導波路の構造を示す断面
図であって、同図に示すように基板１７上に下部クラッ
ド（低屈折率層）１８及びコア（高屈折率層）１９を形
成した後、コア１９を埋め込むようにして上部クラッド
（低屈折率層）２０を蒸着によって形成する場合などの
ように、凹凸の大きい基板面上に蒸着を行う場合には、
図中に斜線で示すように凹凸の境目付近に多結晶状態の
部分２１が形成され易く、コア１９の周囲の屈折率が不
均一になってしまう。その結果、コア１９の中を伝播す
べき光が多結晶状態の部分２１から漏れて伝搬ロスが生
じることになる。そこで本発明の解決すべき課題は、蒸
着材料粒子を強制的に加速して被蒸着物に衝突させる手
段を用いることなく簡単な装置構成で厚い蒸着膜を形成
することができ、しかも凹凸の大きい被蒸着面に対して
も屈折率の均一な蒸着膜を形成できる真空蒸着装置を提
供することにある。However, in the above-described conventional electron beam evaporation apparatus, the evaporation source 12 disposed below the evaporation source 12 disposed below the substrate 16 with the surface 16a to be evaporated facing downward. Due to the structure in which the evaporated particles are formed by attaching the particles, the evaporated particles rise against the gravity, and the kinetic energy of the evaporated particles when they are attached to the substrate 16 is small. Adhesion to the substrate 6 is low. Therefore, when an attempt is made to form a thick deposited film, the deposited film is separated from the substrate 16 by its own weight, and cracks and the like are likely to occur. On the other hand, as a method of compensating for this defect, an ion beam assist method, an ion plating method, and the like have been conventionally known. It is possible to form a deposited film. However, in a vacuum deposition apparatus using an ion beam assist method or an ion plating method, since the directionality and kinetic energy of deposition material particles colliding with a substrate are extremely large, a film having large anisotropy is easily formed, and quartz It is not suitable for forming an amorphous dielectric film having a uniform refractive index required for an optical waveguide or the like. For example, FIG. 3 is a cross-sectional view showing the structure of the optical waveguide. After a lower cladding (low refractive index layer) 18 and a core (high refractive index layer) 19 are formed on a substrate 17 as shown in FIG. When vapor deposition is performed on a substrate surface having large irregularities, such as when the upper clad (low refractive index layer) 20 is formed by vapor deposition while embedding the core 19,
As shown by hatching in the figure, the polycrystalline portion 21 is likely to be formed near the boundary between the irregularities, and the refractive index around the core 19 becomes non-uniform. As a result, light to be propagated in the core 19 leaks from the polycrystalline portion 21 to cause propagation loss. Therefore, the problem to be solved by the present invention is that a thick vapor deposition film can be formed with a simple apparatus configuration without using means for forcibly accelerating the vapor deposition material particles and colliding with an object to be vapor-deposited, and has a large unevenness. An object of the present invention is to provide a vacuum deposition apparatus capable of forming a deposition film having a uniform refractive index even on a deposition surface.

【０００４】[0004]

【課題を解決するための手段】上記課題を解決するため
に、請求項１に記載の発明は、真空容器内にて蒸着材料
を蒸発させて被蒸着物の表面に蒸着させる真空蒸着装置
において、前記蒸着材料の蒸発源を下方に向けて設け、
該蒸発源の下方に前記被蒸着物を設けたことを特徴とし
ている。また、請求項２に記載の発明は、請求項１に記
載の装置構成を前提にして、前記蒸着材料に固形材料を
使用するとともに、蒸着材料が雫となって落下しないよ
うに蒸着材料の加熱を制御する制御手段を備えたことを
特徴としている。また、請求項３に記載の発明は、請求
項２に記載の装置構成を前提にして、前記蒸着材料を加
熱するための手段に電子銃を使用し、前記制御手段によ
り当該電子銃の出力を制御するようになしたことを特徴
としている。Means for Solving the Problems In order to solve the above problems, the invention according to claim 1 is a vacuum evaporation apparatus for evaporating an evaporation material in a vacuum vessel and evaporating the material on the surface of an object to be evaporated. An evaporation source of the deposition material is provided facing downward,
The object is provided below the evaporation source. According to a second aspect of the present invention, based on the apparatus configuration of the first aspect, a solid material is used as the vapor deposition material, and the vapor deposition material is heated so that the vapor deposition material does not drop and drop. Is provided. According to a third aspect of the present invention, based on the apparatus configuration of the second aspect, an electron gun is used as a means for heating the deposition material, and the output of the electron gun is controlled by the control means. It is characterized by being controlled.

【０００５】[0005]

【発明の実施の形態】以下、添付図面に示した実施の形
態により本発明を詳細に説明する。図１は本発明に係る
真空蒸着装置の一例である電子ビーム蒸着装置の実施の
形態を示す装置構成図である。この電子ビーム蒸着装置
は、真空容器１内の上部に蒸着源２及び電子銃３を配置
し、真空容器１内の下部に被蒸着物である基板４を設置
するための基板設置台５を配置してなる。真空容器１内
は図示しない真空ポンプにより排気され所定の真空度に
保たれるようになっている。蒸着源２は内部に蒸着材料
６を保持しており、その蒸着材料粒子放出口２ａを下方
に向けて配置されている。蒸着材料６には固形化（タブ
レット化）した材料が使用される。電子銃３は熱電子放
出用のフィラメント３ａを備え、フィラメント３ａから
放出した電子ビーム７を磁場により曲げて蒸着源２内の
蒸着材料６に入射させることにより蒸着材料６を加熱し
て蒸発させる。この電子銃３のフィラメント３ａへの通
電は真空容器１の外に設けられた制御装置８により制御
され、蒸着材料６が融けて雫となって落下しないように
電子ビーム出力が制御されるようになっている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to embodiments shown in the accompanying drawings. FIG. 1 is an apparatus configuration diagram showing an embodiment of an electron beam evaporation apparatus as an example of a vacuum evaporation apparatus according to the present invention. In this electron beam evaporation apparatus, an evaporation source 2 and an electron gun 3 are arranged at an upper part in a vacuum vessel 1, and a substrate mounting table 5 for installing a substrate 4 to be deposited is arranged at a lower part in the vacuum vessel 1. Do it. The inside of the vacuum vessel 1 is evacuated by a vacuum pump (not shown) and is maintained at a predetermined degree of vacuum. The vapor deposition source 2 holds a vapor deposition material 6 therein, and is disposed with the vapor deposition material particle emission port 2a facing downward. As the deposition material 6, a solidified (tablet) material is used. The electron gun 3 includes a filament 3a for emitting thermoelectrons. The electron beam 7 emitted from the filament 3a is bent by a magnetic field and is incident on the deposition material 6 in the deposition source 2 to heat and vaporize the deposition material 6. The energization of the filament 3a of the electron gun 3 is controlled by a control device 8 provided outside the vacuum vessel 1 so that the output of the electron beam is controlled so that the vapor deposition material 6 does not melt and drop. Has become.

【０００６】上記のように構成された電子ビーム蒸着装
置では、真空容器１内の上部に配置した蒸着源２内の蒸
着材料６を電子銃３より発する電子ビーム７で加熱、蒸
発させると、蒸発した蒸着材料粒子が蒸着源２の放出口
２ａから放出され、下方に放射状に拡がりながら下降
し、真空容器１内の下部に配置した基板設置台５上の基
板４の上面４ａに蒸着材料粒子が付着することによって
蒸着膜が形成される。したがって、従来のように蒸着膜
がその自重により基板４から剥離するというような不具
合が生じないため、基板４に対して密着性の悪い蒸着材
料を使用する場合でも、所望の厚さの蒸着膜を容易に形
成できる。そして、例えば、基板４及び蒸着材料にガラ
スなどの誘電体材料を使用する場合には、蒸着処理後に
所定温度でアニール処理することにより、蒸着膜の緻密
度と基板４との密着性を改善することができる。In the electron beam evaporation apparatus configured as described above, when the evaporation material 6 in the evaporation source 2 disposed in the upper portion of the vacuum vessel 1 is heated and evaporated by the electron beam 7 emitted from the electron gun 3, the evaporation The vapor deposition material particles are discharged from the discharge port 2 a of the vapor deposition source 2, descend while spreading radially downward, and the vapor deposition material particles are deposited on the upper surface 4 a of the substrate 4 on the substrate mounting table 5 disposed in the lower portion of the vacuum vessel 1. The deposited film is formed by the attachment. Therefore, unlike the related art, there is no problem that the deposited film is peeled off from the substrate 4 by its own weight. Therefore, even when a deposited material having poor adhesion to the substrate 4 is used, the deposited film having a desired thickness is used. Can be easily formed. For example, when a dielectric material such as glass is used as the substrate 4 and the vapor deposition material, the denseness of the vapor deposition film and the adhesion to the substrate 4 are improved by annealing at a predetermined temperature after the vapor deposition process. be able to.

【０００７】また、この実施の形態では、蒸着材料粒子
を磁場などで強制的に加速して基板に衝突させる手段を
用いず、蒸発の際にランダムな方向に飛散した蒸着材料
粒子を、進行方向のランダム性を保った状態で基板に衝
突させるようにしているため、凹凸の大きい被蒸着面に
対しても屈折率の均一な厚い蒸着膜を形成することがで
きる。例えば、厚さ１０〜２５μｍ程度のアモルファス
状態の誘電体膜を容易に形成することが可能である。な
お、以上の実施の形態では本発明の真空蒸着装置につい
て電子ビーム蒸着装置に適用した場合を例にとり説明し
たが、蒸着源２に保持された蒸着材料６を加熱、蒸発さ
せるための手段は電子銃３に限られるものではなく、蒸
着材料よりも高融点の金属に電流を流して発熱させその
熱で蒸着材料６を加熱する、より一般的な加熱蒸発手段
を備えた真空蒸着装置にも適用できる。Further, in this embodiment, the vapor deposition material particles scattered in a random direction during the evaporation are removed in the traveling direction without using means for forcibly accelerating the vapor deposition material particles with a magnetic field or the like to collide with the substrate. Therefore, a thick deposited film having a uniform refractive index can be formed even on a deposition surface having large irregularities. For example, it is possible to easily form an amorphous dielectric film having a thickness of about 10 to 25 μm. In the above embodiment, the case where the vacuum evaporation apparatus of the present invention is applied to an electron beam evaporation apparatus has been described as an example. However, the means for heating and evaporating the evaporation material 6 held in the evaporation source 2 is an electron beam. The present invention is not limited to the gun 3, and is also applicable to a vacuum deposition apparatus having a more general heating and evaporating means for heating a deposition material 6 by applying a current to a metal having a higher melting point than the deposition material to generate heat. it can.

【０００８】[0008]

【発明の効果】以上要するに、本発明によれば以下のよ
うな優れた効果を発揮できる。請求項１に記載の発明で
は、蒸着材料の蒸発源を下方に向けて設け、その蒸発源
の下方に被蒸着物を設けて真空蒸着を行うように真空蒸
着装置を構成したことにより、被蒸着物の上面に蒸着膜
を形成することができるようになったので、蒸着膜がそ
の自重により基板から剥離するというような不具合は全
くなく、基板に対して密着性の悪い蒸着材料を使用する
場合でも、所望の厚さの蒸着膜を容易に形成でき、しか
も凹凸の大きい被蒸着面に対しても屈折率の均一な蒸着
膜を形成することができる。また、請求項２に記載の発
明では、請求項１の効果に加え、蒸着材料に固形材料を
使用するとともに、蒸着材料が雫となって落下しないよ
うに蒸着材料の加熱を制御する制御手段を備えたことこ
とにより、蒸着処理中に蒸着材料が被蒸着物上に落下す
るのを防止して安定した蒸着処理を行うことができる。
また、請求項３に記載の発明は、請求項２の効果に加
え、蒸着材料を加熱するための手段に電子銃を使用し、
制御手段により電子銃の出力を制御するようになしたこ
とにより、蒸着材料の加熱温度を適正に制御してより安
定した蒸着処理を行うことができる。In summary, according to the present invention, the following excellent effects can be exhibited. According to the first aspect of the present invention, the evaporation source of the evaporation material is provided downward, and the vacuum evaporation apparatus is configured to perform the vacuum evaporation by providing the object to be evaporated below the evaporation source. When using a vapor-deposited material with poor adhesion to the substrate, there is no problem that the vapor-deposited film can be separated from the substrate by its own weight because a vapor-deposited film can be formed on the upper surface of the object However, a vapor deposition film having a desired thickness can be easily formed, and a vapor deposition film having a uniform refractive index can be formed even on a surface to be vapor deposition having large irregularities. According to the second aspect of the present invention, in addition to the effect of the first aspect, a control means for controlling the heating of the vapor deposition material so as to use a solid material as the vapor deposition material and prevent the vapor deposition material from dropping and falling. With the provision, the deposition material can be prevented from dropping onto the deposition target during the deposition process, and a stable deposition process can be performed.
According to a third aspect of the present invention, in addition to the effect of the second aspect, an electron gun is used as a means for heating the deposition material,
Since the output of the electron gun is controlled by the control means, the heating temperature of the deposition material can be appropriately controlled, and more stable deposition processing can be performed.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明に係る真空蒸着装置の一例である電子ビ
ーム蒸着装置の実施の形態を示す装置構成図である。FIG. 1 is an apparatus configuration diagram showing an embodiment of an electron beam evaporation apparatus as an example of a vacuum evaporation apparatus according to the present invention.

【図２】従来の真空蒸着装置の一例である電子ビーム蒸
着装置の装置構成図である。FIG. 2 is an apparatus configuration diagram of an electron beam evaporation apparatus which is an example of a conventional vacuum evaporation apparatus.

【図３】凹凸のある被蒸着面に蒸着膜を形成する場合に
おける問題点の説明図である。FIG. 3 is an explanatory diagram of a problem in a case where a deposition film is formed on a deposition target surface having irregularities.

【符号の説明】[Explanation of symbols]

１真空容器、２蒸着源、２ａ放出口、３電子
銃、３ａフィラメント、４基板（被蒸着物）、５
基板設置台、６蒸着材料、７電子ビーム、８制御装
置。DESCRIPTION OF SYMBOLS 1 Vacuum container, 2 evaporation source, 2a emission port, 3 electron gun, 3a filament, 4 substrate (deposition target), 5
Substrate mounting table, 6 evaporation material, 7 electron beam, 8 control device.

Claims

【特許請求の範囲】[Claims]

【請求項１】真空容器内にて蒸着材料を蒸発させて被
蒸着物の表面に蒸着させる真空蒸着装置において、前記
蒸着材料の蒸発源を下方に向けて設け、該蒸発源の下方
に前記被蒸着物を設けたことを特徴とする真空蒸着装
置。In a vacuum evaporation apparatus for evaporating an evaporation material in a vacuum vessel and evaporating the evaporation material on the surface of an object to be evaporated, an evaporation source of the evaporation material is provided downward, and the evaporation source is provided below the evaporation source. A vacuum deposition apparatus provided with a deposit.

【請求項２】前記蒸着材料に固形材料を使用するとと
もに、蒸着材料が雫となって落下しないように蒸着材料
の加熱を制御する制御手段を備えたことを特徴とする請
求項１記載の真空蒸着装置。2. The vacuum system according to claim 1, wherein a solid material is used as the vapor deposition material, and control means is provided for controlling heating of the vapor deposition material so that the vapor deposition material does not drop as drops. Evaporation equipment.

【請求項３】前記蒸着材料を加熱するための手段に電
子銃を使用し、前記制御手段により当該電子銃の出力を
制御することを特徴とする請求項２記載の真空蒸着装
置。3. The vacuum deposition apparatus according to claim 2, wherein an electron gun is used as a means for heating the deposition material, and an output of the electron gun is controlled by the control means.