JPH10209524A - Semiconductor thin film magnetoresistance element and its production - Google Patents
Semiconductor thin film magnetoresistance element and its productionInfo
- Publication number
- JPH10209524A JPH10209524A JP9008276A JP827697A JPH10209524A JP H10209524 A JPH10209524 A JP H10209524A JP 9008276 A JP9008276 A JP 9008276A JP 827697 A JP827697 A JP 827697A JP H10209524 A JPH10209524 A JP H10209524A
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- Prior art keywords
- film
- semiconductor thin
- thin film
- short
- electrode
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気検出或いは磁
気回転等の検出に用いられる半導体薄膜磁気抵抗素子と
その製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor thin film magnetoresistive element used for magnetic detection or magnetic rotation detection, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】半導体薄膜磁気抵抗素子は、ＩｎＳｂ，
ＩｎＳｂ−ＮｉＳｂ，ＩｎＡｓ等のキャリヤ移動度が高
い半導体を使用し、磁界を作用させたとき抵抗値が変化
するという性質を有したものである。2. Description of the Related Art Semiconductor thin film magnetoresistive elements include InSb,
A semiconductor having a high carrier mobility, such as InSb-NiSb or InAs, is used, and has a property that a resistance value changes when a magnetic field is applied.
【０００３】図５、６に一般的な、半導体薄膜磁気抵抗
素子の構造を示す。２１は基板、２２は基板２１上に設
けた半導体磁気抵抗膜、２３は半導体磁気抵抗膜２２上
に設けた短絡電極で形成している。２４は半導体磁気抵
抗膜２２に設けた出力取り出し電極部である。２５は電
極部２４のみを残して基板２１上に半導体磁気抵抗膜２
２、短絡電極２３を覆うように形成した保護膜で構成さ
れている。FIGS. 5 and 6 show the structure of a general semiconductor thin film magnetoresistive element. Reference numeral 21 denotes a substrate, 22 denotes a semiconductor magnetoresistive film provided on the substrate 21, and 23 denotes a short-circuit electrode provided on the semiconductor magnetoresistive film 22. Reference numeral 24 denotes an output extraction electrode portion provided on the semiconductor magnetoresistive film 22. Reference numeral 25 denotes the semiconductor magnetoresistive film 2 on the substrate 21 while leaving only the electrode portion 24.
2. It is composed of a protective film formed so as to cover the short-circuit electrode 23.
【０００４】図７に上記の製造方法を示す。図中（ａ）
は、基板２１上に蒸着等の真空装置で設けられた半導体
磁気抵抗膜２２層を所定のパターンにフォトリソおよび
エッチング工程にて除去して図に示すようなパターンに
形成したものである。図中（ｂ）は、その後全面に電極
材料を蒸着等の真空装置で電極膜２６を形成したもので
ある。図中（ｃ）は、その後前面にフォトレジスト２７
を塗布して、短絡電極２３対応のパターンを残すように
フォトリソ工程により処理したものである。図中（ｄ）
は、エッチングにより短絡電極２３及び電極部２４を形
成したものである。図中（ｅ）は、図中（ｄ）上に電極
部２４を残して半導体抵抗膜２２及び短絡電極２３を覆
うように形成した保護膜２５を形成したものである。FIG. 7 shows the above manufacturing method. (A) in the figure
Is formed by removing a semiconductor magnetoresistive film 22 layer provided on a substrate 21 by a vacuum apparatus such as vapor deposition into a predetermined pattern by a photolithography and etching process to form a pattern as shown in the figure. In the figure, (b) shows that the electrode film 26 is formed on the entire surface by a vacuum device such as vapor deposition of an electrode material. In the figure, (c) shows a photoresist 27
And processed by a photolithography process so that a pattern corresponding to the short-circuit electrode 23 is left. (D) in the figure
In the figure, a short-circuit electrode 23 and an electrode portion 24 are formed by etching. (E) of the figure shows a protective film 25 formed on the (d) of the figure so as to cover the semiconductor resistance film 22 and the short-circuit electrode 23 while leaving the electrode portion 24.
【０００５】[0005]
【発明が解決しようとする課題】上記構成の短絡電極２
３の形成は、基板２１上に設けた半導体磁気抵抗膜２２
を形成後、基板全面に電極材を設けてフォトエッチング
処理により形成していたが、フォトエッチング処理によ
り基板２１上に設けた短絡電極２３間に存在する半導体
磁気抵抗膜２２の表面がエッチング剤により侵食され抵
抗特性を悪化させてしまうという問題があった。SUMMARY OF THE INVENTION A short-circuit electrode 2 having the above structure
3 is formed on the semiconductor magnetoresistive film 22 provided on the substrate 21.
Is formed by photo-etching with an electrode material provided on the entire surface of the substrate. However, the surface of the semiconductor magnetoresistive film 22 existing between the short-circuit electrodes 23 provided on the substrate 21 by photo-etching is etched by an etching agent. There has been a problem that the erosion causes deterioration of the resistance characteristics.
【０００６】そこで本発明は、抵抗特性の悪化を防止す
ることを目的とするものである。Therefore, an object of the present invention is to prevent deterioration of resistance characteristics.
【０００７】[0007]
【課題を解決するための手段】この課題を解決するため
に本発明は、基板上に形成した高電子移動度半導体薄膜
抵抗膜形成後、短絡電極形成前に基板全面に酸化防止膜
を形成し、短絡電極間に酸化防止層を設けたことを特徴
とする構造および製造方法である。According to the present invention, an antioxidant film is formed on the entire surface of a substrate after forming a high electron mobility semiconductor thin film resistive film formed on the substrate and before forming a short-circuit electrode. A structure and a manufacturing method, wherein an oxidation preventing layer is provided between short-circuit electrodes.
【０００８】これにより、短絡電極形成において基板上
に設けた半導体磁気抵抗膜表面を酸、アルカリ系エッチ
ング液に触れることなく短絡電極を形成する事が出来
る。このため半導体磁気抵抗膜表面状態を膜形成時状態
で維持でき抵抗特性の悪化はおきないものである。Thus, the short-circuit electrode can be formed without contacting the surface of the semiconductor magnetoresistive film provided on the substrate with the acid or alkali-based etchant in forming the short-circuit electrode. Therefore, the surface state of the semiconductor magnetoresistive film can be maintained in the state at the time of film formation, and the resistance characteristics do not deteriorate.
【０００９】[0009]
【発明の実施の形態】本発明の請求項１に記載の発明
は、基板の表面に形成した半導体磁気抵抗膜と、前記半
導体磁気抵抗膜上に形成した短絡電極及び電気信号取り
出し用の電極部と、前記半導体磁気抵抗膜上に形成した
短絡電極間に酸化防止層とを備えた半導体磁気抵抗素子
であり、以上の構成により短絡電極形成時において基板
上に設けた半導体磁気抵抗膜表面を酸、アルカリ系エッ
チング液に触れることなく短絡電極を形成する事が出来
るため、半導体磁気抵抗膜表面状態を膜形成時状態で維
持することができ、抵抗特性の悪化がおきないという作
用を有するものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is directed to a semiconductor magnetoresistive film formed on a surface of a substrate, a short-circuit electrode formed on the semiconductor magnetoresistive film, and an electrode portion for extracting electric signals. And a semiconductor magnetoresistive element comprising an antioxidant layer between short-circuit electrodes formed on the semiconductor magnetoresistive film, wherein the surface of the semiconductor magnetoresistive film provided on the substrate at the time of forming the short-circuit electrode has an acid. Since the short-circuit electrode can be formed without touching the alkaline etching solution, the surface state of the semiconductor magnetoresistive film can be maintained in the state at the time of film formation, and has an effect that the resistance characteristics do not deteriorate. is there.
【００１０】本発明の請求項２に記載の発明は、半導体
磁気抵抗膜及び短絡電極を覆い、電極部の少なくとも一
部を残す様に形成した保護膜を備えた請求項１記載の半
導体薄膜磁気抵抗素子であり、短絡電極の耐酸化や耐湿
の向上する作用を有するものである。According to a second aspect of the present invention, there is provided a semiconductor thin film magnetic device according to the first aspect, further comprising a protective film which covers the semiconductor magnetoresistive film and the short-circuit electrode and is formed so as to leave at least a part of the electrode portion. It is a resistance element and has an effect of improving oxidation resistance and moisture resistance of the short-circuit electrode.
【００１１】本発明の請求項３に記載の発明は、酸化防
止層を半導体磁気抵抗膜及び短絡電極を覆うように形成
した保護膜と同材料からなる請求項１記載の半導体薄膜
磁気抵抗素子であり、酸化防止層と保護膜との相互間の
高い密着性が得られる作用を有する。According to a third aspect of the present invention, there is provided the semiconductor thin film magnetoresistive element according to the first aspect, wherein the oxidation preventing layer is made of the same material as the protective film formed so as to cover the semiconductor magnetoresistive film and the short-circuit electrode. Yes, it has the effect of obtaining high adhesion between the antioxidant layer and the protective film.
【００１２】本発明の請求項４に記載の発明は、基板上
に高電子移動度半導体薄膜を形成する工程と、該半導体
薄膜を抵抗体形状に膜間を分離するようにパターン形成
を行うフォトリソ及びフォトエッチング工程と、該基板
上全面に酸化防止膜を形成する工程と、該酸化防止膜前
面にフォトレジストを形成して該基板上全面に膜間を分
離した半導体薄膜および素子間分離パターンに加工され
た半導体薄膜に直交する面上にショートバーパターンを
形成するレジスト加工工程と、該基板全面に電極形成す
る工程と、前記電極膜を多数の短絡電極および電極部と
に加工する工程と、前記電極部を残して前記基板上に前
記半導体薄膜及び短絡電極を覆うように形成した保護膜
を備えた半導体薄膜磁気抵抗素子の製造方法であり、短
絡電極形成時に発生する基板上に設けた半導体磁気抵抗
膜表面を酸、アルカリ系エッチング液に触れることなく
短絡電極を形成する事が出来るため、半導体磁気抵抗膜
表面状態を膜形成時状態で維持することができ、抵抗特
性の悪化がおきないとともに、短絡電極の耐酸化や耐湿
の向上が図れるという作用を有するものである。According to a fourth aspect of the present invention, there is provided a photolithography method for forming a high electron mobility semiconductor thin film on a substrate and forming a pattern so as to separate the semiconductor thin film into a resistor shape between the films. And a photoetching step, a step of forming an antioxidant film on the entire surface of the substrate, and a step of forming a photoresist on the front surface of the antioxidant film to form a semiconductor thin film and an element isolation pattern in which films are separated on the entire surface of the substrate. A resist processing step of forming a short bar pattern on a surface orthogonal to the processed semiconductor thin film, a step of forming electrodes on the entire surface of the substrate, and a step of processing the electrode film into a number of short-circuit electrodes and electrode portions, A method of manufacturing a semiconductor thin film magnetoresistive element including a protective film formed on the substrate so as to cover the semiconductor thin film and the short-circuit electrode while leaving the electrode portion. Since the short-circuit electrode can be formed without contacting the surface of the semiconductor magnetoresistive film provided on the substrate to be etched with an acid or an alkali-based etching solution, the surface condition of the semiconductor magnetoresistive film can be maintained in the state at the time of film formation. This has the effect of preventing the resistance characteristics from deteriorating and improving the oxidation resistance and moisture resistance of the short-circuit electrode.
【００１３】本発明の請求項５に記載の発明は、基板上
に高電子移動度の半導体薄膜を形成する工程と、該半導
体薄膜を抵抗体形状に膜間を分離するようにパターン形
成を行うフォトリソ及びフォトエッチング工程と、該基
板上全面にフォトレジストを形成する工程と、該基板上
全面に膜間を分離した半導体薄膜および素子間分離パタ
ーンに加工された半導体薄膜に直交する面上にショート
バーパターンを形成するレジスト加工工程と、該基板上
全面に酸化防止膜を形成する工程と、前記該半導体薄膜
に形成したフォトレジストパターンを除去してパターン
上に形成されている前記酸化防止膜を同時に取り除き短
絡電極間に酸化防止層を形成する工程と、該基板全面に
電極形成する工程と、前記電極膜を多数の短絡電極およ
び電極部とに加工する工程と、前記電極部を残して前記
基板上に前記半導体薄膜及び短絡電極を覆うように形成
した保護膜を備えた半導体薄膜磁気抵抗素子の製造方法
であり、短絡電極形成時に発生する基板上に設けた半導
体磁気抵抗膜表面を酸、アルカリ系エッチング液に触れ
ることなく短絡電極を形成する事が出来るため、半導体
磁気抵抗膜表面状態を膜形成時状態で維持することがで
き、抵抗特性の悪化がおきないとともに、短絡電極の耐
酸化や耐湿の向上が図れるという作用を有するものであ
る。According to a fifth aspect of the present invention, a step of forming a semiconductor thin film having high electron mobility on a substrate and forming a pattern so as to separate the semiconductor thin film into a resistor shape between the films. A photolithography and photo-etching step, a step of forming a photoresist on the entire surface of the substrate, and a short-circuit on a surface orthogonal to the semiconductor thin film separated into a film and the semiconductor thin film processed into an inter-element separation pattern on the entire surface of the substrate. A resist processing step of forming a bar pattern, a step of forming an antioxidant film on the entire surface of the substrate, and removing the photoresist pattern formed on the semiconductor thin film by removing the antioxidant film formed on the pattern. Removing simultaneously, forming an oxidation preventing layer between the short-circuit electrodes, forming an electrode on the entire surface of the substrate, and processing the electrode film into a number of short-circuit electrodes and electrode portions And a method of manufacturing a semiconductor thin film magnetoresistive element including a protective film formed on the substrate so as to cover the semiconductor thin film and the short-circuit electrode while leaving the electrode portion. The short-circuit electrode can be formed without contacting the surface of the semiconductor magnetoresistive film provided in the above with an acid or alkali-based etchant, so that the surface condition of the semiconductor magnetoresistive film can be maintained in the state at the time of film formation, and the resistance characteristic can be improved. This has the effect of preventing deterioration and improving the oxidation resistance and moisture resistance of the short-circuit electrode.
【００１４】本発明の請求項６に記載の発明は、基板上
に高電子移動度の半導体薄膜を形成する工程と、該半導
体薄膜を抵抗体形状に膜間を分離するようにパターン形
成を行うフォトリソ及びフォトエッチング工程と、該基
板上全面に膜間を分離した半導体薄膜にフォトレジスト
を形成して、素子間分離パターンに加工された半導体薄
膜に直交する面上にフォトレジストでショートバーパタ
ーンを形成すると共に該半導体薄膜の分離部にも形成す
る工程と、該基板全面に電極形成する工程と、前記半導
体薄膜に形成したフォトレジストパターンを除去して多
数の短絡電極とするように加工する工程と、前記電極部
のみ残して前記基板上に前記半導体薄膜及び短絡電極を
覆うように形成した保護膜を備えた半導体薄膜磁気抵抗
素子の製造方法であり、酸化防止膜を形成せずに短絡電
極形成時に発生する基板上に設けた半導体磁気抵抗膜表
面を酸、アルカリ系エッチング液に触れることなく短絡
電極を形成する事が出来るため、半導体磁気抵抗膜表面
状態を膜形成時状態で維持することができ、抵抗特性の
悪化がおきないとともに、短絡電極の耐酸化や耐湿の向
上が図れるという作用を有するものである。According to a sixth aspect of the present invention, a step of forming a semiconductor thin film having high electron mobility on a substrate and forming a pattern so as to separate the semiconductor thin film into a resistor shape between the films. A photolithography and photo-etching step, a photoresist is formed on a semiconductor thin film having a film separated on the entire surface of the substrate, and a short bar pattern is formed with the photoresist on a surface orthogonal to the semiconductor thin film processed into an element separation pattern. Forming and also forming an isolation portion of the semiconductor thin film, forming an electrode on the entire surface of the substrate, and removing the photoresist pattern formed on the semiconductor thin film to form a plurality of short-circuit electrodes And a method of manufacturing a semiconductor thin film magnetoresistive element including a protective film formed on the substrate so as to cover the semiconductor thin film and the short-circuit electrode while leaving only the electrode portion. In addition, since the surface of the semiconductor magnetoresistive film provided on the substrate, which is generated when the short-circuit electrode is formed without forming the antioxidant film, can be formed without contacting the acid or alkali-based etchant, the semiconductor magnetoresistive The film surface state can be maintained in the state at the time of film formation, the resistance characteristics do not deteriorate, and the short-circuit electrode has an effect of improving oxidation resistance and moisture resistance.
【００１５】以下、本発明の実施の形態について図１か
ら図４を用いて説明する。 （実施の形態１）図１、２は、本発明の半導体薄膜磁気
抵抗素子の一実施の形態を示す。図中、１はＳｉやガラ
ス等の基板、２はＩｎＳｂ，ＩｎＳｂ−ＮｉＳｂ，Ｉｎ
Ａｓ等のキャリヤ移動度が高い半導体磁気抵抗膜であ
り、基板１上に設けられている。３は短絡電極であり半
導体磁気抵抗膜２上に設けられている。４は半導体磁気
抵抗膜２の出力取り出し電極部である。短絡電極３及び
電極部４は、Ｃｕ／Ｔｉ，Ｃｕ／Ｃｒ，Ａｌ／Ｃｒ等の
２層構造として構成されている場合と、Ｉｎ等の単層構
造として構成されている場合とがある。尚、短絡電極３
及び電極部４とを同一材料で形成すると工程が簡略化さ
れる。An embodiment of the present invention will be described below with reference to FIGS. (Embodiment 1) FIGS. 1 and 2 show an embodiment of a semiconductor thin film magnetoresistive element of the present invention. In the figure, 1 is a substrate such as Si or glass, 2 is InSb, InSb-NiSb, In
It is a semiconductor magnetoresistive film having a high carrier mobility such as As, and is provided on the substrate 1. Reference numeral 3 denotes a short-circuit electrode provided on the semiconductor magnetoresistive film 2. Reference numeral 4 denotes an output extraction electrode portion of the semiconductor magnetoresistive film 2. The short-circuit electrode 3 and the electrode part 4 may be configured as a two-layer structure of Cu / Ti, Cu / Cr, Al / Cr or the like, or may be configured as a single-layer structure of In or the like. The short-circuit electrode 3
When the electrode portion 4 and the electrode portion 4 are formed of the same material, the process is simplified.
【００１６】５はＳｉＯ2，ＳｉＮ等の酸化防止層であ
り、半導体磁気抵抗膜２上および短絡電極３間に設けら
れている。６は電極部４のみを残して基板１上に半導体
磁気抵抗膜２、短絡電極３を覆うように形成したポリイ
ミド、ＳｉＯ2，ＳｉＮ等の保護膜である。酸化防止層
５は、半導体磁気抵抗膜２、短絡電極３を覆うように設
けられた保護膜６と同材料で形成すると相互間の高い密
着性が得られる。Reference numeral 5 denotes an oxidation preventing layer such as SiO 2 or SiN, which is provided on the semiconductor magnetoresistive film 2 and between the short-circuit electrodes 3. Reference numeral 6 denotes a protective film made of polyimide, SiO 2 , SiN, or the like formed on the substrate 1 so as to cover the semiconductor magnetoresistive film 2 and the short-circuit electrode 3 while leaving only the electrode portion 4. When the antioxidant layer 5 is formed of the same material as the protective film 6 provided so as to cover the semiconductor magnetoresistive film 2 and the short-circuit electrode 3, high adhesion between them can be obtained.
【００１７】酸化防止層５の形成法は、基板１上に蒸着
等の真空装置で設けられた半導体磁気抵抗膜２を所定の
パターンにフォトリソおよびエッチング工程にて除去し
てパターン化した後、基板１上に酸化防止膜を全面に形
成する。その後、フォトリソにて短絡電極パターンに対
応するレジスト膜を形成し、エッチング工程にて基板１
上に形成した酸化防止膜を除去して酸化防止層５を形成
する。その後、電極材を真空装置により基板１全面に形
成して、短絡電極３を作成するためにふたたびフォトリ
ソおよびエッチング工程にて除去して短絡電極３を形成
する。The oxidation preventing layer 5 is formed by removing the semiconductor magnetoresistive film 2 provided on the substrate 1 by a vacuum apparatus such as vapor deposition into a predetermined pattern by photolithography and etching to form a pattern. An antioxidant film is formed on the entire surface of the substrate. Thereafter, a resist film corresponding to the short-circuit electrode pattern is formed by photolithography, and the substrate 1 is etched in an etching step.
The antioxidant film formed thereon is removed to form the antioxidant layer 5. Thereafter, an electrode material is formed on the entire surface of the substrate 1 by a vacuum device, and is removed again by a photolithography and etching process to form the short-circuit electrode 3 to form the short-circuit electrode 3.
【００１８】第２の形成法として、基板１上に蒸着等の
真空装置で設けられた半導体磁気抵抗膜を所定のパター
ンにフォトリソおよびエッチング工程にて除去してパタ
ーン化する。ここまでは、第１の形成方法と同様であ
る。その後、フォトリソにて短絡電極パターンに対応す
るレジスト膜を形成し、その上に酸化防止膜を全面に形
成する。その後、リフトオフ方法にてレジストで形成さ
れた短絡電極パターンレジストを除去して、短絡電極パ
ターンレジスト上に形成されている酸化防止膜も同時に
除去してしまい酸化防止層５を形成する。その後、電極
材を真空装置により基板１全面に形成して、ふたたびフ
ォトリソにて短絡電極パターンに対応するレジスト膜を
形成し、エッチング工程にて除去して短絡電極３を形成
する。As a second forming method, the semiconductor magnetoresistive film provided on the substrate 1 by a vacuum apparatus such as vapor deposition is removed into a predetermined pattern by photolithography and an etching step to be patterned. The steps up to here are the same as in the first forming method. Thereafter, a resist film corresponding to the short-circuit electrode pattern is formed by photolithography, and an antioxidant film is formed on the entire resist film. Thereafter, the short-circuit electrode pattern resist formed by the resist is removed by the lift-off method, and the anti-oxidation film formed on the short-circuit electrode pattern resist is also simultaneously removed to form the anti-oxidation layer 5. Thereafter, an electrode material is formed on the entire surface of the substrate 1 by a vacuum device, a resist film corresponding to the short-circuit electrode pattern is formed again by photolithography, and removed by an etching process to form the short-circuit electrode 3.
【００１９】尚、短絡電極３及び電極部４がＡｌ／Ｃｒ
やＩｎ等で酸化がしにくい場合は、しいて保護膜６を形
成しなくても良い。The short-circuit electrode 3 and the electrode portion 4 are made of Al / Cr.
If oxidation is difficult due to In or In, the protective film 6 need not be formed.
【００２０】本実施の形態で作成した半導体薄膜磁気抵
抗素子の抵抗特性を測定した結果、従来のような特性劣
化は見られなかった。また、素子表面分析も行ったが、
半導体磁気抵抗膜表面の侵食等は見られなかった。As a result of measuring the resistance characteristics of the semiconductor thin film magnetoresistive element prepared in this embodiment, no characteristic deterioration as in the prior art was observed. In addition, element surface analysis was also performed,
No erosion on the surface of the semiconductor magnetoresistive film was observed.
【００２１】（実施の形態２）図３、４に本発明の第２
の実施の形態を示す。図中、１はＳｉやガラス等の基
板、２はＩｎＳｂ，ＩｎＳｂ−ＮｉＳｂ，ＩｎＡｓ等の
キャリヤ移動度が高い半導体磁気抵抗膜であり、基板１
上に設けられている。３は短絡電極であり半導体磁気抵
抗膜２上に設けられている。４は半導体磁気抵抗膜２の
出力取り出し電極部である。短絡電極３及び電極部４
は、Ｃｕ／Ｔｉ，Ｃｕ／Ｃｒ，Ａｌ／Ｃｒ等の２層構造
として構成されている場合と、Ｉｎ等の単層構造として
構成されている場合とがある。尚、短絡電極３及び電極
部４とを同一材料で形成すると工程が簡略化される。６
は電極部４のみを残して基板１上に半導体磁気抵抗膜
２、短絡電極３を覆うように形成したポリイミド、Ｓｉ
Ｏ2，ＳｉＮ等の保護膜である。(Embodiment 2) FIGS. 3 and 4 show a second embodiment of the present invention.
An embodiment will be described. In the figure, reference numeral 1 denotes a substrate made of Si or glass, and 2 denotes a semiconductor magnetoresistive film having a high carrier mobility, such as InSb, InSb-NiSb, InAs.
It is provided above. Reference numeral 3 denotes a short-circuit electrode provided on the semiconductor magnetoresistive film 2. Reference numeral 4 denotes an output extraction electrode portion of the semiconductor magnetoresistive film 2. Short-circuit electrode 3 and electrode part 4
May be configured as a two-layer structure of Cu / Ti, Cu / Cr, Al / Cr or the like, or may be configured as a single-layer structure of In or the like. If the short-circuit electrode 3 and the electrode portion 4 are formed of the same material, the process is simplified. 6
Is polyimide, Si formed on the substrate 1 so as to cover the semiconductor magnetoresistive film 2 and the short-circuit electrode 3 while leaving only the electrode portion 4.
It is a protective film of O 2 , SiN or the like.
【００２２】この半導体薄膜磁気抵抗素子の作成方法を
図４に示す。図中（ａ）及び（ｆ）は、前記実施の形態
と同様に基板１上に蒸着等の真空装置で設けられた半導
体磁気抵抗膜層を所定のパターンにフォトリソおよびエ
ッチング工程にて除去して図に示すようなパターンに形
成したものである。図中（ｂ）は、その後全面にフォト
レジスト８を形成して、短絡電極３間を残すようにレジ
ストパターンをフォトリソ工程により処理する。図中
（ｃ）は、全面に電極材料を蒸着等の真空装置で電極膜
９を形成した図で、前工程で残したレジストをリフトオ
フ処理にて除去して短絡電極３及び電極部４を形成する
（図中（ｄ）。図中（ｅ）は、図中（ｄ）上に電極部を
残して半導体抵抗膜及び短絡電極を覆うように保護膜６
を形成するものである。FIG. 4 shows a method of fabricating the semiconductor thin film magnetoresistive element. In the figures, (a) and (f) show that the semiconductor magnetoresistive film layer provided on the substrate 1 by a vacuum apparatus such as vapor deposition is removed by a photolithography and etching process into a predetermined pattern, as in the above embodiment. It is formed in a pattern as shown in the figure. In FIG. 2B, a photoresist 8 is formed on the entire surface, and the resist pattern is processed by a photolithography process so as to leave a space between the short-circuit electrodes 3. In the figure, (c) is a diagram in which an electrode material is formed on the entire surface by a vacuum device such as evaporation, and the resist left in the previous process is removed by lift-off processing to form the short-circuit electrode 3 and the electrode portion 4. ((D) in the figure, and (e) in the figure, the protective film 6 covers the semiconductor resistance film and the short-circuit electrode while leaving the electrode portion on (d) in the figure).
Is formed.
【００２３】尚、短絡電極３及び電極部４がＡｌ／Ｃｒ
やＩｎ等で酸化がしにくい場合は、しいて保護膜６を形
成しなくても良い。The short-circuit electrode 3 and the electrode portion 4 are made of Al / Cr
If oxidation is difficult due to In or In, the protective film 6 need not be formed.
【００２４】本実施の形態で作成した半導体薄膜磁気抵
抗素子の抵抗特性を測定した結果、従来のような特性劣
化は見られなかった。また、素子表面分析も行ったが、
半導体磁気抵抗膜表面の侵食等は見られなかった。As a result of measuring the resistance characteristics of the semiconductor thin film magnetoresistive element prepared in the present embodiment, no characteristic deterioration as in the prior art was observed. In addition, element surface analysis was also performed,
No erosion on the surface of the semiconductor magnetoresistive film was observed.
【００２５】[0025]
【発明の効果】以上のように本発明は、基板の表面に形
成した半導体磁気抵抗膜と、半導体抵抗膜上に形成した
短絡電極及び電気信号取り出し用の電極部と、半導体抵
抗膜上に形成した短絡電極間に酸化防止層と、電極部に
残して前記基板上に前記半導体抵抗膜及び短絡電極を覆
うように形成した保護膜を備えたものであり、この構成
にすれば、短絡電極形成において基板上に設けた半導体
磁気抵抗膜表面を酸、アルカリ系エッチング液に触れる
ことなく短絡電極を形成する事が出来るため、半導体磁
気抵抗膜表面状態を膜形成時状態で維持することがで
き、抵抗特性の悪化を防止することができる。As described above, the present invention provides a semiconductor magnetoresistive film formed on the surface of a substrate, a short-circuit electrode and an electrode portion for extracting an electric signal formed on the semiconductor resistive film, and a semiconductor magnetoresistive film formed on the semiconductor resistive film. An antioxidant layer between the short-circuited electrodes, and a protective film formed on the substrate so as to cover the semiconductor resistance film and the short-circuited electrode while being left in the electrode portion. Since the surface of the semiconductor magnetoresistive film provided on the substrate can be formed with a short-circuit electrode without contacting the surface of the semiconductor magnetoresistive film with an acid or an alkali-based etchant, the surface state of the semiconductor magnetoresistive film can be maintained in the state at the time of film formation, Deterioration of resistance characteristics can be prevented.
【図１】本発明の一実施の形態を示す斜視図FIG. 1 is a perspective view showing an embodiment of the present invention.
【図２】同実施の形態の断面図FIG. 2 is a sectional view of the embodiment.
【図３】本発明の他の実施の形態を示す斜視図FIG. 3 is a perspective view showing another embodiment of the present invention.
【図４】同実施の形態の製造工程を示す工程図FIG. 4 is a process chart showing a manufacturing process of the embodiment.
【図５】従来の半導体薄膜磁気抵抗素子の斜視図FIG. 5 is a perspective view of a conventional semiconductor thin film magnetoresistive element.
【図６】同従来例の製造工程を示す工程図FIG. 6 is a process diagram showing a manufacturing process of the conventional example.
【図７】従来の製造工程を示す工程図FIG. 7 is a process diagram showing a conventional manufacturing process.
【符号の説明】 １，２１ 基板 ２，２２ 半導体磁気抵抗膜 ３，２３ 短絡電極 ４，２４ 電極部 ５ 酸化防止層 ６，２５ 保護膜[Description of Reference Numerals] 1,21 substrate 2,22 semiconductor magnetoresistive film 3,23 short-circuit electrode 4,24 electrode part 5 antioxidant layer 6,25 protective film
フロントページの続き (72)発明者 谷川 秀之 大阪府門真市大字門真1006番地 松下電器 産業株式会社内Continued on the front page (72) Inventor Hideyuki Tanikawa 1006 Kazuma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.
Claims (6)
と、前記半導体磁気抵抗膜上に形成した短絡電極及び電
気信号取り出し用の電極部と、前記半導体磁気抵抗膜上
に形成した短絡電極間に酸化防止層とを備えた半導体薄
膜磁気抵抗素子。1. A semiconductor magnetoresistive film formed on a surface of a substrate, a short-circuit electrode formed on the semiconductor magneto-resistive film and an electrode portion for extracting an electric signal, and a short-circuit electrode formed on the semiconductor magneto-resistive film. Semiconductor thin-film magnetoresistive element further comprising an antioxidant layer.
電極部の少なくとも一部を残す様に形成した保護膜を備
えた請求項１記載の半導体薄膜磁気抵抗素子。2. Covering the semiconductor magnetoresistive film and the short-circuit electrode,
2. The semiconductor thin film magnetoresistive element according to claim 1, further comprising a protective film formed so as to leave at least a part of the electrode portion.
絡電極を覆うように形成した保護膜と同材料からなる請
求項１記載の半導体薄膜磁気抵抗素子。3. The semiconductor thin film magnetoresistive element according to claim 1, wherein the oxidation preventing layer is made of the same material as the protective film formed so as to cover the semiconductor magnetoresistive film and the short-circuit electrode.
する工程と、該半導体薄膜を抵抗体形状に膜間を分離す
るようにパターン形成を行うフォトリソ及びフォトエッ
チング工程と、該基板上全面に酸化防止膜を形成する工
程と、該酸化防止膜前面にフォトレジストを形成して該
基板上全面に膜間を分離した半導体薄膜および素子間分
離パターンに加工された半導体薄膜に直交する面上にシ
ョートバーパターンを形成するレジスト加工工程と、該
基板全面に電極形成する工程と、前記電極膜を多数の短
絡電極および電極部とに加工する工程と、前記電極部を
残して前記基板上に前記半導体薄膜及び短絡電極を覆う
ように形成した保護膜を備えた半導体薄膜磁気抵抗素子
の製造方法。4. A process for forming a high electron mobility semiconductor thin film on a substrate, a photolithography and photo etching process for forming a pattern so as to separate the semiconductor thin film into a resistor shape between the films, and an entire surface on the substrate. Forming an anti-oxidation film on the surface of the anti-oxidation film, forming a photoresist on the front surface of the anti-oxidation film, and forming a photoresist on the entire surface of the substrate on a surface orthogonal to the semiconductor thin film and the semiconductor thin film processed into an inter-element isolation pattern. A resist processing step of forming a short bar pattern on the substrate, a step of forming an electrode on the entire surface of the substrate, a step of processing the electrode film into a number of short-circuit electrodes and electrode parts, and leaving the electrode part on the substrate. A method for manufacturing a semiconductor thin film magnetoresistive element comprising a protective film formed so as to cover the semiconductor thin film and the short-circuit electrode.
成する工程と、該半導体薄膜を抵抗体形状に膜間を分離
するようにパターン形成を行うフォトリソ及びフォトエ
ッチング工程と、該基板上全面にフォトレジストを形成
する工程と、該基板上全面に膜間を分離した半導体薄膜
および素子間分離パターンに加工された半導体薄膜に直
交する面上にショートバーパターンを形成するレジスト
加工工程と、該基板上全面に酸化防止膜を形成する工程
と、前記半導体薄膜に形成したフォトレジストパターン
を除去してパターン上に形成されている前記酸化防止膜
を同時に取り除き短絡電極間に酸化防止層を形成する工
程と、該基板全面に電極形成する工程と、前記電極膜を
多数の短絡電極および電極部とに加工する工程と、前記
電極部を残して前記基板上に前記半導体薄膜及び短絡電
極を覆うように形成した保護膜を備えた半導体薄膜磁気
抵抗素子の製造方法。5. A process for forming a semiconductor thin film having high electron mobility on a substrate, a photolithography and photoetching process for forming a pattern so as to separate the semiconductor thin film into a resistor shape between the films, and A step of forming a photoresist on the entire surface, and a resist processing step of forming a short bar pattern on a surface orthogonal to the semiconductor thin film processed into a semiconductor thin film and an inter-element separation pattern on the entire surface of the substrate, Forming an antioxidant film on the entire surface of the substrate, removing the photoresist pattern formed on the semiconductor thin film and simultaneously removing the antioxidant film formed on the pattern to form an antioxidant layer between the short-circuit electrodes; And forming an electrode on the entire surface of the substrate, processing the electrode film into a number of short-circuit electrodes and electrode portions, and leaving the electrode portion, A method for manufacturing a semiconductor thin film magnetoresistive element comprising a protective film formed on a substrate so as to cover the semiconductor thin film and the short-circuit electrode.
成する工程と、該半導体薄膜を抵抗体形状に膜間を分離
するようにパターン形成を行うフォトリソ及びフォトエ
ッチング工程と、該基板上全面に膜間を分離した半導体
薄膜にフォトレジストを形成して、素子間分離パターン
に加工された半導体薄膜に直交する面上にフォトレジス
トでショートバーパターンを形成すると共に該半導体薄
膜の分離部にも形成する工程と、該基板全面に電極形成
する工程と、前記半導体薄膜に形成したフォトレジスト
パターンを除去して多数の短絡電極とするように加工す
る工程と、前記電極部のみ残して前記基板上に前記半導
体薄膜及び短絡電極を覆うように形成した保護膜を備え
た半導体薄膜磁気抵抗素子の製造方法。6. A step of forming a semiconductor thin film having high electron mobility on a substrate, a photolithography and photoetching step of forming a pattern so as to separate the semiconductor thin film into a resistor shape between the films, and A photoresist is formed on a semiconductor thin film having a film separated on the entire surface, and a short bar pattern is formed with a photoresist on a surface orthogonal to the semiconductor thin film processed into an inter-element separation pattern, and a separation portion of the semiconductor thin film is formed. Forming an electrode over the entire surface of the substrate; removing the photoresist pattern formed on the semiconductor thin film to form a plurality of short-circuit electrodes; A method of manufacturing a semiconductor thin film magnetoresistive element comprising a protective film formed on the semiconductor thin film and the short-circuit electrode so as to cover the semiconductor thin film and the short-circuit electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9008276A JPH10209524A (en) | 1997-01-21 | 1997-01-21 | Semiconductor thin film magnetoresistance element and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9008276A JPH10209524A (en) | 1997-01-21 | 1997-01-21 | Semiconductor thin film magnetoresistance element and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10209524A true JPH10209524A (en) | 1998-08-07 |
Family
ID=11688664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9008276A Pending JPH10209524A (en) | 1997-01-21 | 1997-01-21 | Semiconductor thin film magnetoresistance element and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10209524A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1037289A2 (en) * | 1999-03-18 | 2000-09-20 | TDK Corporation | Semiconductor magnetoresistance device, making method and magnetic sensor |
-
1997
- 1997-01-21 JP JP9008276A patent/JPH10209524A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1037289A2 (en) * | 1999-03-18 | 2000-09-20 | TDK Corporation | Semiconductor magnetoresistance device, making method and magnetic sensor |
| US6335675B1 (en) | 1999-03-18 | 2002-01-01 | Tdk Corporation | Semiconductor magnetoresistance device, making method and magnetic sensor |
| EP1037289A3 (en) * | 1999-03-18 | 2005-03-02 | TDK Corporation | Semiconductor magnetoresistance device, making method and magnetic sensor |
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