JPH10199914A - Wire-bonding method - Google Patents

Wire-bonding method

Info

Publication number
JPH10199914A
JPH10199914A JP9011919A JP1191997A JPH10199914A JP H10199914 A JPH10199914 A JP H10199914A JP 9011919 A JP9011919 A JP 9011919A JP 1191997 A JP1191997 A JP 1191997A JP H10199914 A JPH10199914 A JP H10199914A
Authority
JP
Japan
Prior art keywords
wire
bonding
capillary
tip
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9011919A
Other languages
Japanese (ja)
Inventor
Kouji Nishimaki
公路 西巻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to JP9011919A priority Critical patent/JPH10199914A/en
Publication of JPH10199914A publication Critical patent/JPH10199914A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To always make const. the shape and size of a ball formed at the top of an Au wire by straightening this wire bent at bonding to a second bond point and keeping a const. distance between the top of the wire and spark electrode in the next step. SOLUTION: After bonding to a second bond point B2 , an Au wire 2 is fed by a fixed length from the top end of a capillary 1, such that after bonding, the capillary 1 is moved back by a specified length from the bond point B2 to a first bond point in the reverse direction (arrow 1) to that at wiring, while the moved up by specified length (arrow 2). When the capillary 1 is moved up by the specified length, the wire 2 is held by clamps 3 and pulled up to cut off the wire 2 connected to the point B2 .

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体製造におけ
るワイヤーボンディング方法に係り、より詳しくは、第
２ボンド点へのボンディング時にキャピラリーの圧接に
よって生ずるワイヤー先端の曲がりを矯正することがで
きるワイヤーボンディング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method in semiconductor manufacturing, and more particularly, to a wire bonding method capable of correcting a bending of a wire tip caused by pressure contact of a capillary at the time of bonding to a second bonding point. About.

【０００２】[0002]

【従来の技術】従来は、図３（Ａ）に示すように、第２
ボンド点（リード）Ｂ2 へのボンディング後、キャピラ
リー１の先端から一定量の金線２を繰り出すために、キ
ャピラリー１を上方へ所定距離だけ引き上げた後、図３
（Ｂ）に示すように、クランプ３で金線２を掴んで引き
上げることにより、金線１をカットしていた。2. Description of the Related Art Conventionally, as shown in FIG.
After bonding to the bond point (lead) B 2 , the capillary 1 is pulled upward by a predetermined distance in order to pay out a fixed amount of gold wire 2 from the tip of the capillary 1.
As shown in (B), the gold wire 1 was cut by grasping and pulling up the gold wire 2 with the clamp 3.

【０００３】[0003]

【発明が解決しようとする課題】しかしながら、上記し
た従来方法による場合、図４に第２ボンディング時のキ
ャピラリー先端部分の拡大断面図を示すように、第２ボ
ンディング時に生じた金線２の曲がり癖Ｒがキャピラリ
ー１を引き上げ後も図３（Ｂ）に示すようにそのまま残
っていた。しかも、その曲がり具合はボンディング状態
で異なり、一定していなかった。このため、図５に示す
ように、次工程で金線２の先端にボールを形成する際
に、スパーク電極４と金線２の先端との距離Ｌが金線の
曲がり具合によって変わってしまい、スパーク電極４の
放電によって金線の先端に形成されるボールの形状や大
きさが一定しないという問題があった。特に、スパーク
電極４の位置が固定されたタイプのワイヤボンディング
装置の場合、距離調整が難しいためにボールの形状と大
きさが変化し易い。However, in the case of the conventional method described above, FIG. 4 shows an enlarged sectional view of the tip of the capillary at the time of the second bonding, and the bending tendency of the gold wire 2 generated at the time of the second bonding. After R pulled up the capillary 1, it remained as shown in FIG. 3 (B). In addition, the degree of bending differs depending on the bonding state and is not constant. Therefore, as shown in FIG. 5, when a ball is formed at the tip of the gold wire 2 in the next step, the distance L between the spark electrode 4 and the tip of the gold wire 2 changes depending on the degree of bending of the gold wire, There is a problem that the shape and size of the ball formed at the tip of the gold wire by the discharge of the spark electrode 4 are not constant. In particular, in the case of a wire bonding apparatus of a type in which the position of the spark electrode 4 is fixed, the shape and size of the ball tend to change because the distance adjustment is difficult.

【０００４】本発明は、上記のような問題を解決するた
めになされたもので、第２ボンド点へのボンディング時
に生ずるワイヤーの曲がり癖を直してワイヤーの先端を
真っ直ぐに伸ばし、次工程におけるスパーク電極とワイ
ヤーの先端との距離を一定に維持することによって、ワ
イヤーの先端に形成されるボールの形状と大きさを常に
一定にすることができるワイヤーボンディング方法を提
供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem. The present invention corrects a bending tendency of a wire generated at the time of bonding to a second bonding point, straightens the tip of the wire, and forms a spark in the next step. An object of the present invention is to provide a wire bonding method capable of keeping the shape and size of a ball formed at the tip of a wire constant by maintaining the distance between the electrode and the tip of the wire constant.

【０００５】[0005]

【課題を解決するための手段】上記目的を達成するた
め、本発明のワイヤーボンディング方法は、第２ボンド
点へのボンディング終了後、キャピラリーの先端から一
定量のワイヤーを繰り出した状態を作り出す際に、ボン
ディング終了後のキャピラリーを第２ボンド点から第１
ボンド点へ向かってワイヤリング時とは逆方向に所定量
だけ引き戻しながら、これと同時に上方へ向かって所定
量だけ引き上げ、キャピラリーが所定量上方へ引き上げ
られた時点でワイヤーをクランプで挟んで上方へ引っ張
ることにより、第２ボンド点に接続されたワイヤーをカ
ットすることを特徴とするものである。In order to achieve the above object, a wire bonding method according to the present invention provides a method for producing a state in which a fixed amount of wire is drawn out from the tip of a capillary after completion of bonding to a second bonding point. After the bonding, the capillary is moved from the second bonding point to the first.
While pulling back toward the bond point by a predetermined amount in the direction opposite to the time of wiring, at the same time pulling upward by a predetermined amount, and when the capillary is pulled up by a predetermined amount, pull the wire upward by clamping it with a clamp Thereby, the wire connected to the second bond point is cut.

【０００６】[0006]

【作用】上記のような構成とした場合、キャピラリーを
第２ボンド点から上方へ引き上げる際に、キャピラリー
は第２ボンド点から第１ボンド点へ向かってワヤリング
時とは逆方向に所定量だけ引き戻される。したがって、
第２ボンド点にボンディングした際に生ずるワイヤー先
端の曲がり癖が矯正され、ワイヤー先端が元の真っ直ぐ
な状態に戻される。このため、スパーク電極とワイヤー
先端との距離が一定になり、ワイヤーの先端に形成され
るボールの形状と大きさを常に一定にすることができ
る。With the above arrangement, when the capillary is pulled upward from the second bond point, the capillary is pulled back from the second bond point toward the first bond point by a predetermined amount in the direction opposite to the time of the wire ring. It is. Therefore,
The bending tendency of the wire tip generated when bonding to the second bond point is corrected, and the wire tip is returned to the original straight state. For this reason, the distance between the spark electrode and the tip of the wire becomes constant, and the shape and size of the ball formed at the tip of the wire can always be kept constant.

【０００７】[0007]

【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して説明する。本発明に係るワイヤーボン
ディング方法は、図１（Ａ）に示すように、第２ボンド
点Ｂ2 へのボンディング終了後、キャピラリー１の先端
から一定量の金線２を繰り出す際に、矢印で示すよう
に、第２ボンド点Ｂ2 から第１ボンド点（図示せず）へ
向かってワイヤリング時とは逆方向に所定量だけ引き戻
しながら、これと同時に矢印で示すように、キャピラ
リー１を所定量だけ上方へ引き上げる。Embodiments of the present invention will be described below with reference to the drawings. Wire bonding method according to the present invention, as shown in FIG. 1 (A), after the bonding end of the second to the bonding point B 2, when feeding the gold wire 2 of a certain amount from the tip of the capillary 1, indicated by the arrow as such, the time of wiring toward the second bonding point B 2 to the first bonding point (not shown) while pulling back by a predetermined amount in the opposite direction, at the same time as indicated by the arrows, the capillary 1 by a predetermined amount Pull up.

【０００８】そして、キャピラリー１が所定量だけ上方
へ引き上げられた時点で、図１（Ｂ）に示すように、ク
ランプ３を閉じて金線２を挟み、そのままクランプ３と
キャピラリー１をさらに上方へ引き上げ、第２ボンド点
Ｂ2 に接続された金線２を引きちぎるようにしてカット
する。Then, when the capillary 1 is pulled up by a predetermined amount, as shown in FIG. 1B, the clamp 3 is closed, the gold wire 2 is sandwiched, and the clamp 3 and the capillary 1 are further raised as it is. pulling cut so as to tear the gold wire 2 connected to the second bonding point B 2.

【０００９】このようなワイヤーボンディング方法を採
用すると、第２ボンド点Ｂ2 にボンディングした際に生
ずる図４に例示したようなワイヤー先端の曲がり癖Ｒが
矯正され、図１（Ｂ）に示すように、ワイヤー２の先端
が元の真っ直ぐな状態に戻される。このため、図２に示
すように、次工程で金線２の先端にボールを形成する際
に、スパーク電極４と金線２の先端との距離Ｌを一定に
維持することができ、金線２の先端に形成されるボール
の形状と大きさを常に一定にすることができる。When such a wire bonding method is adopted, the bending habit R of the wire tip as illustrated in FIG. 4 which occurs when bonding to the second bonding point B2 is corrected, and as shown in FIG. Then, the tip of the wire 2 is returned to the original straight state. Therefore, as shown in FIG. 2, when a ball is formed at the tip of the gold wire 2 in the next step, the distance L between the spark electrode 4 and the tip of the gold wire 2 can be kept constant, The shape and size of the ball formed at the tip of the second can always be constant.

【００１０】なお、前記矢印で示した引き戻し距離な
らびに矢印で示した上方への引き上げ距離は、ワイヤ
ーボンディング装置毎にそれぞれ最適な値に設定される
ものである。また、上記の例では、ワイヤーとして金線
２を用いた場合について説明したが、金線に限らず、銅
線、アルミ線など、他のワイヤーであっても同様に実施
できるものである。The pull-back distance indicated by the arrow and the upward pull distance indicated by the arrow are set to optimal values for each wire bonding apparatus. Further, in the above example, the case where the gold wire 2 is used as the wire has been described. However, the present invention is not limited to the gold wire, but can be similarly applied to other wires such as a copper wire and an aluminum wire.

【００１１】[0011]

【発明の効果】以上説明したように、本発明のワイヤー
ボンディング方法によれば、第２ボンド点へのボンディ
ング終了後、キャピラリーの先端から一定量のワイヤー
を繰り出した状態を作り出す際に、ボンディング終了後
のキャピラリーを第２ボンド点から第１ボンド点へ向か
ってワイヤリング時とは逆方向に所定量だけ引き戻しな
がら、これと同時に上方へ向かって所定量だけ引き上
げ、キャピラリーが所定量上方へ引き上げられた時点で
ワイヤーをクランプで挟んで上方へ引っ張ることによ
り、第２ボンド点に接続されたワイヤーをカットするよ
うにしたので、第２ボンド点へのボンディング時に生ず
るワイヤー先端の曲がり癖を矯正し、ワイヤー先端を元
の真っ直ぐな状態に戻すことができる。このため、次工
程におけるスパーク電極とワイヤー先端との距離を一定
に維持することができ、ワイヤー先端に形成されるボー
ルの形状と大きさを常に一定として、確実で高品質なワ
イヤーボンディングを行なうことが可能となる。As described above, according to the wire bonding method of the present invention, after the bonding to the second bonding point is completed, when a state where a fixed amount of wire is drawn out from the tip of the capillary is created, the bonding is completed. While pulling the subsequent capillary backward from the second bond point toward the first bond point by a predetermined amount in the direction opposite to the time of wiring, at the same time, the capillary was pulled upward by a predetermined amount, and the capillary was pulled upward by a predetermined amount. At this point, the wire connected to the second bond point was cut by clamping the wire with the clamp and pulling the wire upward, so that the bending tendency of the wire tip generated at the time of bonding to the second bond point was corrected. The tip can be returned to its original straight state. Therefore, the distance between the spark electrode and the tip of the wire in the next step can be kept constant, and the shape and size of the ball formed at the tip of the wire are always constant, and reliable and high-quality wire bonding is performed. Becomes possible.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明方法の一実施形態の説明図であって、
（Ａ）は第２ボンディング後のキャピラリーの移動制御
の説明図、（Ｂ）はクランプによるカット動作の説明図
である。FIG. 1 is an explanatory view of an embodiment of the method of the present invention,
(A) is an explanatory diagram of the movement control of the capillary after the second bonding, and (B) is an explanatory diagram of a cutting operation by a clamp.

【図２】本発明方法による場合のスパーク電極と金線の
間隙状態を示す図である。FIG. 2 is a diagram showing a gap state between a spark electrode and a gold wire according to the method of the present invention.

【図３】従来方法の説明図であって、（Ａ）は第２ボン
ディング後のキャピラリーの移動制御の説明図、（Ｂ）
はクランプによるカット動作の説明図である。3A and 3B are explanatory diagrams of a conventional method, in which FIG. 3A is an explanatory diagram of capillary movement control after a second bonding, and FIG.
FIG. 4 is an explanatory diagram of a cutting operation by a clamp.

【図４】第２ボンディング時のキャピラリー部分の拡大
断面図である。FIG. 4 is an enlarged cross-sectional view of a capillary portion during a second bonding.

【図５】従来方法による場合のスパーク電極と金線の間
隙状態を示す図である。FIG. 5 is a view showing a gap state between a spark electrode and a gold wire in the case of a conventional method.

【符号の説明】[Explanation of symbols]

１ キャピラリー ２ 金線（ワイヤー） ３ クランプ ４ スパーク電極 Ｂ2 第２ボンド点 Ｒ 曲がり癖DESCRIPTION OF SYMBOLS 1 Capillary 2 Gold wire 3 Clamp 4 Spark electrode B 2 Second bond point R Bending habit

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 第２ボンド点へのボンディング終了後、
キャピラリーの先端から一定量のワイヤーを繰り出した
状態を作り出す際に、ボンディング終了後のキャピラリ
ーを第２ボンド点から第１ボンド点へ向かってワイヤリ
ング時とは逆方向に所定量だけ引き戻しながら、これと
同時に上方へ向かって所定量だけ引き上げ、 キャピラリーが所定量上方へ引き上げられた時点でワイ
ヤーをクランプで挟んで上方へ引っ張ることにより、第
２ボンド点に接続されたワイヤーをカットすることを特
徴とするワイヤーボンディング方法。After completion of bonding to a second bonding point,
When creating a state in which a fixed amount of wire is drawn out from the tip of the capillary, the capillary after bonding is pulled back from the second bond point toward the first bond point by a predetermined amount in a direction opposite to that at the time of wiring. At the same time, the wire connected to the second bond point is cut by pulling the wire upward by a predetermined amount and, when the capillary is pulled upward by a predetermined amount, holding the wire with a clamp and pulling the wire upward. Wire bonding method.
JP9011919A 1997-01-07 1997-01-07 Wire-bonding method Pending JPH10199914A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9011919A JPH10199914A (en) 1997-01-07 1997-01-07 Wire-bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9011919A JPH10199914A (en) 1997-01-07 1997-01-07 Wire-bonding method

Publications (1)

Publication Number Publication Date
JPH10199914A true JPH10199914A (en) 1998-07-31

Family

ID=11791112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9011919A Pending JPH10199914A (en) 1997-01-07 1997-01-07 Wire-bonding method

Country Status (1)

Country Link
JP (1) JPH10199914A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135168A (en) * 2007-11-29 2009-06-18 Nec Electronics Corp Wire bonding method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135168A (en) * 2007-11-29 2009-06-18 Nec Electronics Corp Wire bonding method

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