JPH10199666A - Direct heating heater with liquid leakage sensor - Google Patents
Direct heating heater with liquid leakage sensorInfo
- Publication number
- JPH10199666A JPH10199666A JP1784497A JP1784497A JPH10199666A JP H10199666 A JPH10199666 A JP H10199666A JP 1784497 A JP1784497 A JP 1784497A JP 1784497 A JP1784497 A JP 1784497A JP H10199666 A JPH10199666 A JP H10199666A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- direct
- alarm
- liquid
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Control Of Resistance Heating (AREA)
- Resistance Heating (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する分野】本発明は、半導体ウエハの処理槽
内などに直接投入される直熱型ヒータに関するもので、
特に、保護チューブの破損箇所から酸性やアルカリ性の
処理液が侵入して内部のヒータを溶かし、溶けた金属が
処理液中に混入して半導体ウエハの表面を汚染するとい
う事態を未然に防止するための漏液検出機能を備えた直
熱型ヒータに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a direct heat type heater which is directly charged into a processing tank for semiconductor wafers or the like.
In particular, to prevent a situation in which an acidic or alkaline processing solution enters from a damaged portion of the protective tube and melts the internal heater, and the melted metal is mixed into the processing solution and contaminates the surface of the semiconductor wafer. The present invention relates to a direct-heat-type heater having a liquid leakage detecting function.
【０００２】[0002]
【従来の技術】従来、半導体製造工程で半導体ウエハの
表面を洗浄するために、酸性やアルカリ性の洗浄液を浸
した洗浄装置を用いることが一般的である。酸性やアル
カリ性の洗浄液としては、水酸化アンモニウムと過酸化
水素を含む水溶液や、塩酸と過酸化水素を含む水溶液
や、硫酸と過酸化水素を含む水溶液等がある。2. Description of the Related Art Conventionally, in order to clean a surface of a semiconductor wafer in a semiconductor manufacturing process, a cleaning apparatus immersed in an acidic or alkaline cleaning solution is generally used. Examples of the acidic or alkaline cleaning liquid include an aqueous solution containing ammonium hydroxide and hydrogen peroxide, an aqueous solution containing hydrochloric acid and hydrogen peroxide, and an aqueous solution containing sulfuric acid and hydrogen peroxide.
【０００３】この洗浄に要する時間を短縮するために、
酸性やアルカリ性の洗浄液中に石英チューブに封止され
る直熱型ヒータを内蔵する洗浄装置が最近用いられるよ
うになっている。この直熱型ヒータ内蔵の洗浄装置を用
いて洗浄槽内の洗浄液を常温より高い温度（例えば４０
〜１３０℃）に保ち、この高温状態で半導体ウエハの表
面を洗浄すると、常温の場合に比べて洗浄時間が半分以
下となり、洗浄工程に要する時間を短縮できるという利
点がある。In order to shorten the time required for this cleaning,
A cleaning apparatus incorporating a direct-heat-type heater sealed in a quartz tube in an acidic or alkaline cleaning liquid has recently been used. The cleaning liquid in the cleaning tank is heated to a temperature higher than normal temperature (for example, 40
(130 ° C.) and cleaning the surface of the semiconductor wafer in this high temperature state has the advantage that the cleaning time can be reduced to half or less as compared with the case of normal temperature and the time required for the cleaning step can be reduced.
【０００４】図６は、従来の石英チューブに封止される
直熱型ヒータ内蔵の洗浄装置の概略構成図である。洗浄
槽１内に酸性やアルカリ性の洗浄液２を浸して半導体ウ
エハの表面を洗浄する。洗浄槽１内の洗浄液２中に石英
チューブ３によって封止されるヒータ４を内蔵したもの
を浸漬することによって洗浄液の温度を高め、半導体ウ
エハの表面の洗浄時間を短縮する。FIG. 6 is a schematic configuration diagram of a conventional cleaning apparatus having a built-in direct-heat heater sealed in a quartz tube. An acidic or alkaline cleaning liquid 2 is immersed in a cleaning tank 1 to clean the surface of the semiconductor wafer. The temperature of the cleaning liquid is increased by immersing the cleaning liquid 2 in the cleaning tank 1 containing the heater 4 sealed by the quartz tube 3 to shorten the cleaning time of the surface of the semiconductor wafer.
【０００５】ヒータ４の典型的なものは、ニッケル（Ｎ
ｉ）とクロム（Ｃｒ）との合金で構成されており、ヒー
タ４の入側４１はストレートで、石英チューブ３管内途
中から螺旋部４２として円形螺旋状に巻いていき（図中
の右から左の方向に進んでいく）、円形螺旋状に巻いた
後に円形螺旋の中空部分をストレート状に戻して、ヒー
タ４の出側４３につながっている。ヒータ電源５は、洗
浄槽１内の洗浄液２の温度（例えば４０〜１３０℃の範
囲）を一定の温度に保つものである。A typical heater 4 is nickel (N
i) and an alloy of chromium (Cr), and the inlet side 41 of the heater 4 is straight, and is wound in a circular spiral as a spiral part 42 from the middle of the quartz tube 3 (from right to left in the figure). ), And after winding in a circular spiral shape, the hollow portion of the circular spiral is returned to a straight shape and connected to the outlet side 43 of the heater 4. The heater power supply 5 keeps the temperature (for example, in the range of 40 to 130 ° C.) of the cleaning liquid 2 in the cleaning tank 1 at a constant temperature.
【０００６】[0006]
【発明が解決しようとする課題】上述したような石英チ
ューブに封止される直熱型ヒータを使用する洗浄装置で
は、半導体ウエハの表面を洗浄する際に、洗浄槽内で酸
性やアルカリ性の洗浄液が常温よりも高い温度（例えば
４０〜１３０℃）に保たれる。高温では酸性やアルカリ
性の洗浄液の活性度合が著しいため、ヒータを内蔵して
いる石英チューブが徐々に溶かされていき、やがては、
石英チューブの肉厚の薄い部分が最初に破損して穴あき
状態となってしまう。この破損した穴部から酸性やアル
カリ性の洗浄液が侵入してきてヒータを濡らす。In a cleaning apparatus using a direct-heat heater sealed in a quartz tube as described above, when cleaning the surface of a semiconductor wafer, an acidic or alkaline cleaning liquid is used in a cleaning tank. Is maintained at a temperature higher than normal temperature (for example, 40 to 130 ° C.). At high temperatures, the activity of the acidic or alkaline cleaning liquid is remarkable, so the quartz tube containing the heater gradually melts, and eventually,
The thin part of the quartz tube is broken first and becomes a perforated state. An acidic or alkaline cleaning liquid enters the damaged hole and wets the heater.
【０００７】ヒータは通常、ニクロム線でニッケルとク
ロムの合金で出来ているので、酸性やアルカリ性の洗浄
液に浸ると溶解して、洗浄液はニッケルとクロムをイオ
ン状態で含有している状態となる。洗浄液がニッケルと
クロム等の重金属イオンを含んでいる状態となると、こ
の重金属イオンが半導体ウエハの表面全体にニッケルと
クロム等の重金属の層が付着してしまう。このような状
態になると、半導体ウエハは全面が不良となり製品とし
ての製造は出来ない。Since the heater is usually made of an alloy of nickel and chromium with a nichrome wire, the heater is dissolved when immersed in an acidic or alkaline cleaning solution, and the cleaning solution contains nickel and chromium in an ionic state. If the cleaning solution contains heavy metal ions such as nickel and chromium, the heavy metal ions adhere to a layer of heavy metal such as nickel and chromium on the entire surface of the semiconductor wafer. In such a state, the entire surface of the semiconductor wafer becomes defective and cannot be manufactured as a product.
【０００８】ヒータの破損を防止するものとして、特開
平１ー３１５１３９号公報での石英洗浄槽では、石英洗
浄槽の底部の側面または底面から張り出されるヒ−タを
収納する凸部を設け、その凸部に石英ヒ−タを収納する
ことにより、石英ヒ−タの破損を防止するものがある。
しかしながら、石英ヒ−タが石英洗浄槽の底部の側面に
張り出された石英ヒ−タを収納する凸部に完全に収納さ
れる構造となつているため、石英ヒ−タの発熱を石英洗
浄槽内に均一に伝達し難く、しかも、温度制御機構を付
随させても、石英洗浄槽内の洗浄液の温度制御性が著し
く悪いという問題がある。In order to prevent breakage of the heater, the quartz cleaning tank disclosed in Japanese Patent Application Laid-Open No. 1-315139 is provided with a convex portion for accommodating a heater projecting from the side or bottom surface of the bottom of the quartz cleaning tank. In some cases, the quartz heater is housed in the convex portion to prevent the quartz heater from being damaged.
However, since the quartz heater is completely housed in the convex portion for accommodating the quartz heater protruding from the side of the bottom of the quartz washing tank, the heat generated by the quartz heater is washed with quartz. There is a problem that it is difficult to transmit the cleaning solution uniformly in the tank, and even if a temperature control mechanism is added, the temperature controllability of the cleaning liquid in the quartz cleaning tank is extremely poor.
【０００９】一方、石英ヒ−タの破損を検出するものと
して、特開平７ー１０６０５３号公報でのヒ−タ破損検
出器では、内管と外管との間の空間又はこの空間を減圧
する配管中に液体の流入を検出する液体検出センサを備
えることにより、管の破損により金属汚染された洗浄液
が処理槽内を汚染するのを防止する技術が提案されてい
る。On the other hand, in the heater damage detector disclosed in Japanese Patent Application Laid-Open No. Hei 7-106053, the space between the inner tube and the outer tube or this space is depressurized. A technique has been proposed in which a liquid detection sensor for detecting inflow of a liquid into a pipe is provided to prevent a cleaning liquid contaminated with metal due to breakage of the pipe from contaminating the inside of a processing tank.
【００１０】具体的な構成としては、直接処理槽内に投
入し洗浄液を加熱するための加熱部を２重構造の石英管
で構成し、内外の石英管の間は減圧ポンプにより圧力調
整器を介し管を破損させない最適圧に減圧し、外側の石
英管に破損やピンホ−ルが生じ洗浄液が空間に流れ込む
とＹ字状のチユ−ブを介しトラツプボツクスにおいて例
えばレ−ザセンサが光量の変化により検知するものであ
る。このヒ−タ破損検出器は、液体検出センサ、液体加
熱部、減圧ポンプ及び圧力調整器等の構造が複雑であ
り、かつレ−ザセンサでの光量の変化により検知する方
法は信頼性の点で問題がある。[0010] As a specific configuration, a heating section for directly charging the cleaning liquid into the processing tank is constituted by a quartz tube having a double structure, and a pressure regulator is provided between the inner and outer quartz tubes by a decompression pump. The pressure is reduced to an optimum pressure that does not damage the tube, and if the outer quartz tube is damaged or a pinhole occurs and the cleaning liquid flows into the space, the laser sensor detects the change in the amount of light in the trap box via a Y-shaped tube. Is what you do. This heater breakage detector has a complicated structure such as a liquid detection sensor, a liquid heating unit, a decompression pump, and a pressure regulator, and the method of detecting a change in the amount of light with a laser sensor is not reliable. There's a problem.
【００１１】[0011]
【課題を解決するための手段】上記従来技術の課題を解
決する本第１の発明の漏液センサ付き直熱型ヒータは、
処理液内に直接投入される直熱型ヒータと、この直熱型
ヒータに流れる電流若しくはこの直熱型ヒータの抵抗又
はこれらの双方を検出する検出手段と、この検出手段に
よる検出値が予め定められた許容範囲を超えたときに前
記直熱型ヒータが破損したと見做して警報を発生する警
報発生手段とを備えている。SUMMARY OF THE INVENTION A direct heat type heater with a liquid leak sensor according to a first aspect of the present invention which solves the above-mentioned problems of the prior art,
A direct-heat type heater directly injected into the processing liquid, detection means for detecting a current flowing through the direct-heat type heater, a resistance of the direct-heat type heater, or both, and a detection value by the detection means is predetermined. Alarm means for generating an alarm when the direct-heated heater is considered to be damaged when the temperature exceeds the allowable range.
【００１２】本第２の発明の漏液センサ付き直熱型ヒー
タは、処理液内に直接投入される直熱型ヒータと、この
直熱型ヒータ内部のガスを検知するガス検知管と、この
ガス検知管で前記処理液の組成のガスを検知したときに
前記直熱型ヒータが破損したと見做して警報を発する警
報発生手段とを備えている。A direct-heater with a liquid-leak sensor according to a second aspect of the present invention includes a direct-heater directly supplied into a processing liquid, a gas detection tube for detecting gas inside the direct-heater, When the gas detecting tube detects a gas having the composition of the processing solution, the direct heating type heater is considered to be damaged, and an alarm generating means for issuing an alarm.
【００１３】本第３の発明の漏液センサ付き直熱型ヒー
タは、処理液内に直接投入される直熱型ヒータと、この
直熱型ヒータに流れる電流若しくはこのヒータの抵抗又
はこれらの双方を検出する検出手段と、前記直熱型ヒー
タ内部のガスを検知するガス検知手段と、この検出手段
による検出値が予め定められた許容範囲を超えるか、又
は前記ガス検知手段で上記処理液の組成のガスが検知さ
れたときは、前記直熱型ヒータが破損したと見做して警
報を発生する警報発生手段とを備えている。According to a third aspect of the present invention, there is provided a direct heat type heater with a liquid leak sensor, wherein a direct heat type heater directly supplied into a processing liquid, a current flowing through the direct heat type heater, a resistance of the heater, or both. Detection means for detecting the temperature of the processing liquid, a gas detection means for detecting the gas inside the direct heat type heater, the detection value by this detection means exceeds a predetermined allowable range, or the gas detection means When a gas having a composition is detected, the direct heating type heater is considered to be damaged, and an alarm issuance means for issuing an alarm.
【００１４】[0014]
【実施例】以下、本発明の実施例について図面を参照し
て説明する。図１は、本発明の第１の実施例の直熱型ヒ
ータの概略構成図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of a direct heat type heater according to a first embodiment of the present invention.
【００１５】洗浄槽１内に酸性又はアルカリ性の洗浄液
２を浸して半導体ウエハ表面を洗浄する。酸性又はアル
カリ性の洗浄液２としては、水酸化アンモニウムと過酸
化水素を含む水溶液、塩酸と過酸化水素を含む水溶液、
硫酸と過酸化水素を含む水溶液等がある。洗浄槽１内に
酸性又はアルカリ性の洗浄液２中に石英チューブ３に封
止されるヒータ４を内蔵したものを、半導体ウエハの表
面を迅速に洗浄するための直熱型ヒータとして用いる。An acidic or alkaline cleaning solution 2 is immersed in a cleaning tank 1 to clean the semiconductor wafer surface. Examples of the acidic or alkaline cleaning liquid 2 include an aqueous solution containing ammonium hydroxide and hydrogen peroxide, an aqueous solution containing hydrochloric acid and hydrogen peroxide,
There is an aqueous solution containing sulfuric acid and hydrogen peroxide. A cleaning tank 1 having a built-in heater 4 sealed in a quartz tube 3 in an acidic or alkaline cleaning liquid 2 is used as a direct heating heater for quickly cleaning the surface of a semiconductor wafer.
【００１６】ヒータ４は、ニッケル（Ｎｉ）とクロム
（Ｃｒ）との合金から成り、ヒータ４の入側４１はスト
レートで、石英チューブ３管内途中から螺旋部４２とし
て円形螺旋状に巻いていき（図中の右から左の方向に進
んでいく）、円形螺旋状に巻いた後に円形螺旋の中空部
分をストレート状に戻して、ヒータ４の出側４３につな
がっている。The heater 4 is made of an alloy of nickel (Ni) and chromium (Cr), and the inlet side 41 of the heater 4 is straight, and is wound in a circular spiral shape as a spiral part 42 from the middle of the quartz tube 3 (FIG. After proceeding from right to left in the figure), the hollow portion of the circular spiral is returned to a straight shape after being wound in a circular spiral shape, and is connected to the outlet side 43 of the heater 4.
【００１７】ヒータ電源５は、洗浄槽１内の洗浄液２の
温度（例えば４０〜１３０℃の範囲）を一定の温度に保
つものである。ヒータ電源５の出力は、洗浄槽１内の洗
浄液２容量と制御温度範囲によって求められるが、例え
ば、出力２ＫＷとすると、電圧１００Ｖで２０Ａとな
る。この場合ヒータ４の抵抗は５Ωとなる。The heater power supply 5 keeps the temperature (for example, in the range of 40 to 130 ° C.) of the cleaning liquid 2 in the cleaning tank 1 at a constant temperature. The output of the heater power source 5 is determined by the volume of the cleaning liquid 2 in the cleaning tank 1 and the control temperature range. For example, if the output is 2 KW, the output is 20 A at a voltage of 100 V. In this case, the resistance of the heater 4 is 5Ω.
【００１８】温度を一定にする温度制御機構としては、
洗浄槽１内の洗浄液２の温度検出器（図示せず）から検
出された温度が、ヒータ電源５内に設定されている定め
られた温度未満であれば電源ＯＮとし、ヒータ電源５内
に設定されている定められた温度以上であれば電源ＯＦ
ＦとするＯＮーＯＦＦ制御を行う。As a temperature control mechanism for keeping the temperature constant,
If the temperature of the cleaning liquid 2 in the cleaning tank 1 detected by a temperature detector (not shown) is lower than a predetermined temperature set in the heater power supply 5, the power is turned on and set in the heater power supply 5. If the temperature is higher than the specified temperature
F-ON / OFF control is performed.
【００１９】電圧測定ユニット６は、ヒータ４に印加さ
れている電圧を測定するためのもので、ヒータ電源５で
の電源ＯＮーＯＦＦ制御状態、及びヒータ４に印加され
ている電圧異常、変動も検出する。電流測定ユニット７
は、ヒータ４に流れる電流を測定するもので、電流異
常、変動も検出する。The voltage measuring unit 6 is for measuring the voltage applied to the heater 4. The voltage ON / OFF control state of the heater power supply 5 and the voltage abnormality and fluctuation applied to the heater 4 are also measured. To detect. Current measurement unit 7
Is for measuring the current flowing through the heater 4, and also detects abnormal currents and fluctuations.
【００２０】警報発生ユニット８は、電圧測定ユニット
６でのヒータ４に印加されている電圧、電流測定ユニッ
ト７でのヒータ４に流れる電流を時系列的に測定値を取
り込む。電圧測定ユニット６で計測された電圧が０のと
き、警報発生ユニット８は、ヒータ電源５での電源ＯＦ
Ｆ状態と認識する。電圧測定ユニット６で計測された電
圧が０でないとき、警報発生ユニット８は、ヒータ電源
５での電源ＯＮ状態と認識して、電圧測定ユニット６で
の電圧、電流測定ユニット７での電流の他に、電圧測定
ユニット６での電圧を電流測定ユニット７での電流で除
した値を実績としての抵抗値として時系列的に取り込
む。The alarm generation unit 8 fetches the voltage applied to the heater 4 in the voltage measurement unit 6 and the current flowing through the heater 4 in the current measurement unit 7 in time series. When the voltage measured by the voltage measurement unit 6 is 0, the alarm generation unit 8
Recognize as F state. When the voltage measured by the voltage measurement unit 6 is not 0, the alarm generation unit 8 recognizes that the power is on by the heater power supply 5 and outputs the voltage of the voltage measurement unit 6 and the current of the current measurement unit 7. Then, a value obtained by dividing the voltage in the voltage measurement unit 6 by the current in the current measurement unit 7 is chronologically taken in as a resistance value as an actual result.
【００２１】ヒータ電源５での電源ＯＮ状態と認識して
いる状態で、警報発生ユニット８は、上記の電圧、電
流、抵抗の値がある定められた値の範囲を超えたとき、
石英チューブ３の破損した部分から酸性又はアルカリ性
の洗浄液４が侵入していると認識して警報又は警報表示
を行う。In a state in which the power supply of the heater power supply 5 is recognized as being on, the alarm generation unit 8 operates when the voltage, current, and resistance values exceed a predetermined range of values.
An alarm or an alarm is displayed by recognizing that the acidic or alkaline cleaning liquid 4 has entered from the damaged portion of the quartz tube 3.
【００２２】図２は、石英チューブ３の一部分に肉厚が
他より若干薄い部分か、又は洗浄液４が局部的に石英チ
ューブ３の一部分に多く当たっている部分等により、洗
浄液２の酸性又はアルカリ性に対して溶損しやすい、石
英チューブ３の一部分にピンホール９が半導体ウエハ表
面を洗浄している過程で発生している状態を示す。石英
チューブ３の一部分にピンホール９が発生すると、ピン
ホール９が洗浄液２の酸性又はアルカリ性に対して溶損
しやすい状態となり、やがてピンホール９の部分が欠損
して酸性又はアルカリ性の洗浄液４が石英チューブ３内
部に滞留してしまう。FIG. 2 shows an acidic or alkaline area of the cleaning liquid 2 due to a part of the quartz tube 3 having a slightly thinner thickness than the other part, or a part where the cleaning liquid 4 locally contacts a part of the quartz tube 3. This shows a state in which pinholes 9 are generated in a part of the quartz tube 3 in the process of cleaning the surface of the semiconductor wafer, which are easily melted. When a pinhole 9 is generated in a part of the quartz tube 3, the pinhole 9 is apt to be damaged by the acidity or alkalinity of the cleaning liquid 2, and then the pinhole 9 is lost and the acidic or alkaline cleaning liquid 4 becomes quartz. It stays inside the tube 3.
【００２３】この滞留物１０は発生したピンホール９か
ら侵入した洗浄液２の溜まりである。滞留物１０は、４
０〜１３０℃の温度で水酸化アンモニウムと過酸化水素
を含む水溶液や、塩酸と過酸化水素を含む水溶液や、硫
酸と過酸化水素を含む水溶液等である。数百度の温度に
灼熱したニッケル（Ｎｉ）とクロム（Ｃｒ）との合金で
出来ているヒータ４は、滞留物１０に浸積すると、酸又
はアルカリの水溶液が一部蒸発して、アンモニア、又は
塩素、又は二酸化硫黄等のガスと水蒸気の混じったもの
が発生し、数百度の温度に灼熱しているヒータ４の温度
は洗浄槽１内の洗浄液２の温度（４０〜１３０℃の範
囲）に近い温度まで下がる。ヒータ４の温度が下がる
と、ヒータ４の電気抵抗は上昇しかつ電流は下降する。The stagnation material 10 is a pool of the cleaning liquid 2 that has entered the generated pinhole 9. The retentate 10 is 4
An aqueous solution containing ammonium hydroxide and hydrogen peroxide, an aqueous solution containing hydrochloric acid and hydrogen peroxide, and an aqueous solution containing sulfuric acid and hydrogen peroxide at a temperature of 0 to 130 ° C. When the heater 4 made of an alloy of nickel (Ni) and chromium (Cr), which has been heated to a temperature of several hundred degrees, is immersed in the residue 10, the acid or alkali aqueous solution partially evaporates, and ammonia or A mixture of gas such as chlorine or sulfur dioxide and water vapor is generated, and the temperature of the heater 4 igniting to a temperature of several hundred degrees is set to the temperature of the cleaning liquid 2 in the cleaning tank 1 (range of 40 to 130 ° C.). Decrease to near temperature. When the temperature of the heater 4 decreases, the electric resistance of the heater 4 increases and the current decreases.
【００２４】本実施例の漏液センサ付き直熱型ヒータで
は、ヒータ４に流れる電流や抵抗の値を検出する検出手
段として電圧測定ユニット６と電流測定ユニット７とを
設けると共に、この検出手段で検出された電流や抵抗の
値がヒータ４の温度の下降によって定められた基準範囲
を超えたときに石英チューブ３が破損していると見做し
て警報を発生する警報発生ユニット８を設けたことを特
徴とする。In the direct-heat type heater with a liquid leak sensor according to the present embodiment, a voltage measuring unit 6 and a current measuring unit 7 are provided as detecting means for detecting the value of the current flowing through the heater 4 and the value of the resistance. An alarm generating unit 8 is provided to generate an alarm when the detected current or resistance value exceeds a reference range determined by a decrease in the temperature of the heater 4 when the quartz tube 3 is considered to be damaged. It is characterized by the following.
【００２５】本発明の第２の実施例では、電圧測定ユニ
ット６と電流測定ユニット７を設ける代わりに、図３に
示すように、石英チューブ３内にガスクロマトグラフ等
のガス検知管１１を挿入している。In the second embodiment of the present invention, instead of providing the voltage measuring unit 6 and the current measuring unit 7, a gas detecting tube 11 such as a gas chromatograph is inserted into the quartz tube 3 as shown in FIG. ing.
【００２６】石英チューブ３でのピンホール９から侵入
した洗浄液２は、数百度の温度に灼熱しているヒータ４
によって一部が蒸発して化学反応によって、アンモニ
ア、塩素、あるいは、二酸化硫黄等のガスと水蒸気の混
じったものに変化する。これらのガスをガス検知管１１
で検出すれば、石英チューブ３が破損していると認識で
きる。The cleaning liquid 2 that has entered through the pinhole 9 in the quartz tube 3 is heated to a temperature of several hundred degrees by the heater 4.
A part of the gas evaporates and changes to a mixture of water vapor and a gas such as ammonia, chlorine, or sulfur dioxide by a chemical reaction. These gases are supplied to the gas detection tube 11
, It can be recognized that the quartz tube 3 is damaged.
【００２７】本発明の第３の実施例は、ヒータ４に印加
する電源の電流や抵抗の値を検出する電圧測定ユニット
６と電流測定ユニット７とに加えて、ガス検知管１１を
設置し、ヒータ４に印加する電源の電流や抵抗の値が定
められた基準範囲を超えたりアンモニア、塩素、二酸化
硫黄等のガスと水蒸気が検出されたりした場合に、石英
チューブ破損警報手段としての警報発生ユニット８より
警報や警報表示を行って、石英チューブ３が破損してい
ると認識できる。In the third embodiment of the present invention, a gas detection tube 11 is installed in addition to a voltage measurement unit 6 and a current measurement unit 7 for detecting a current and a resistance value of a power supply applied to the heater 4. An alarm generation unit as a quartz tube breakage alarm means when the value of the current or resistance of the power supply applied to the heater 4 exceeds a predetermined reference range, or when gas such as ammonia, chlorine, sulfur dioxide and water vapor are detected. By issuing an alarm or an alarm display from FIG. 8, it can be recognized that the quartz tube 3 is damaged.
【００２８】図４、図５は、ヒータ電源５の出力がＯＮ
の状態での、それぞれヒータ４の電流や電気抵抗の経時
変化を示す図である。石英チューブ３が破損しておら
ず、滞留物（又は漏液）１０の発生していない状態で
は、ヒータ４の電流や電気抵抗は安定的に一定してい
る。例えば、ヒータ電源５の出力２ＫＷとすると、電圧
100Ｖで電流は２０Ａで、電気抵抗は５Ωとなる。電流
や電気抵抗の許容範囲を0.1〜10％とし、仮に５％とす
ると、電流は２０±１Ａで、電気抵抗は５±0.25Ωが許
容範囲となる。FIGS. 4 and 5 show that the output of the heater power supply 5 is ON.
FIG. 4 is a diagram showing changes over time in the current and the electric resistance of the heater 4 in the state of FIG. In a state where the quartz tube 3 is not damaged and no accumulated matter (or liquid leakage) 10 is generated, the current and the electric resistance of the heater 4 are stably constant. For example, if the output of the heater power supply 5 is 2 KW, the voltage
At 100V, the current is 20A and the electrical resistance is 5Ω. Assuming that the allowable range of the current and the electric resistance is 0.1 to 10%, and suppose that it is 5%, the current is 20 ± 1 A and the electric resistance is 5 ± 0.25Ω.
【００２９】石英チューブ３の一部が破損して、例えば
石英チューブ３の一部分にピンホール９が発生すると、
ピンホール９が洗浄液２の酸性又はアルカリ性に対して
溶損しやすい状態となり、やがてピンホール９の部分が
欠損して酸性又はアルカリ性の洗浄液４が石英チューブ
３内部に滞留してしまう。数百度の温度に灼熱している
ヒータ４の温度は洗浄槽１内の洗浄液２の温度（４０〜
１３０℃の範囲）に近い温度まで下がる。ヒータ４の温
度が下がると、ヒータ４の電気抵抗は上昇し且つ電流は
下降する。When a part of the quartz tube 3 is damaged and a pinhole 9 is generated in a part of the quartz tube 3, for example,
The pinhole 9 is easily dissolved by the acidic or alkaline property of the cleaning liquid 2, and the pinhole 9 is eventually lost and the acidic or alkaline cleaning liquid 4 stays inside the quartz tube 3. The temperature of the heater 4 burning to a temperature of several hundred degrees is the temperature of the cleaning liquid 2 in the cleaning tank 1 (40 to 40).
(In the range of 130 ° C.). When the temperature of the heater 4 decreases, the electric resistance of the heater 4 increases and the current decreases.
【００３０】図中Ａは、電流が１９Ａで、電気抵抗が
５. ２５Ωで、石英チューブ３が破損して石英チューブ
破損警報手段としての警報発生ユニット８より警報又は
警報表示を行う。図中Ａを超えると、ヒータ４の腐食に
よる電気抵抗が増加し、電流が減少する。さらに時間が
経過すると、酸性又はアルカリ性の洗浄液がヒータ４を
溶かし、ヒータ４での溶けたニッケル（Ｎｉ）とクロム
（Ｃｒ）とはイオン化して電解液となる。ニッケル（Ｎ
ｉ）とクロム（Ｃｒ）との電解液によって、ヒータ４の
螺旋状の螺旋部４２が通電状態となって電気抵抗が逆に
減少し、電流が増加する。In the figure, A denotes an electric current of 19 A, an electric resistance of 5.25 Ω, and the quartz tube 3 is damaged, and an alarm or an alarm is issued from the alarm generating unit 8 as quartz tube breakage alarm means. If the value exceeds A in the figure, the electric resistance due to the corrosion of the heater 4 increases, and the current decreases. As the time further elapses, the acidic or alkaline cleaning solution dissolves the heater 4, and the nickel (Ni) and chromium (Cr) dissolved in the heater 4 are ionized to become an electrolytic solution. Nickel (N
Due to the electrolytic solution of i) and chromium (Cr), the helical spiral portion 42 of the heater 4 is energized, and the electrical resistance is reduced and the current is increased.
【００３１】ヒータ４が溶けて電流が増加すると、やが
てヒータ４は破断してしまう。一方、ヒータ４での溶け
たニッケル（Ｎｉ）とクロム（Ｃｒ）とはイオン化して
電解液となると、洗浄している半導体ウエハ表面をニッ
ケル（Ｎｉ）とクロム（Ｃｒ）の重金属で汚染してしま
う。従って、図中のＡ点を検出して半導体ウエハ表面を
洗浄する処理を中止すれば、半導体ウエハの表面の汚染
を未然に防止できる。When the current increases due to melting of the heater 4, the heater 4 eventually breaks. On the other hand, when the molten nickel (Ni) and chromium (Cr) in the heater 4 are ionized and become an electrolyte, the surface of the semiconductor wafer being cleaned is contaminated with heavy metals of nickel (Ni) and chromium (Cr). I will. Therefore, if the process of cleaning the surface of the semiconductor wafer by detecting the point A in the drawing is stopped, contamination of the surface of the semiconductor wafer can be prevented.
【００３２】以上、半導体ウエハ洗浄槽内に直接投入す
る場合を例示したが、ウエットエッチングなど洗浄以外
の適宜な処理を行う処理槽内に直接投入するための直熱
型ヒータについても本発明を適用できる。更には、半導
体ウエハ以外の物品を処理するための処理槽内に直接投
入するための直熱型ヒータに対しても本発明を適用でき
る。Although the case where the semiconductor wafer is directly charged into the semiconductor wafer cleaning tank is described above, the present invention is also applied to a direct heat type heater which is directly charged into a processing tank for performing an appropriate process other than cleaning such as wet etching. it can. Furthermore, the present invention can be applied to a direct-heat-type heater for directly charging an article other than a semiconductor wafer into a processing tank for processing articles.
【００３３】また、ヒータを処理液から保護するための
保護管として石英チューブを使用場合を例示したが、あ
る種のセラミックスなど化学的に安定で不活性な他の適
宜な材質の保護管を使用することもできる。Although a quartz tube is used as a protective tube for protecting the heater from the processing liquid, a protective tube made of another suitable material which is chemically stable and inert, such as a certain ceramic, is used. You can also.
【００３４】[0034]
【発明の効果】以上詳細に説明したように、本発明の漏
液センサ付き直熱型ヒータは、ヒータの電流や抵抗の変
動や、処理液の組成のガスを検知してヒータの破損を検
出する構成であるから、早期にかつ高確度のもとにヒー
タの破損を検出し、処理対象の半導体ウエハの汚染を防
止できる。As described in detail above, the direct heat type heater with a liquid leak sensor according to the present invention detects a change in the current or resistance of the heater or a gas of the composition of the processing liquid to detect breakage of the heater. With this configuration, it is possible to detect breakage of the heater early and with high accuracy, thereby preventing contamination of the semiconductor wafer to be processed.
【図１】本発明の一実施例に係わる漏液センサ付き直熱
型ヒータの構成の概要を示す図である。FIG. 1 is a diagram showing an outline of a configuration of a direct-heat type heater with a liquid leakage sensor according to one embodiment of the present invention.
【図２】上記実施例の漏液センサ付き直熱型ヒータにお
いて漏液が発生した状態を示す拡大図である。FIG. 2 is an enlarged view showing a state in which a liquid leak has occurred in the direct heat type heater with a liquid leak sensor of the embodiment.
【図３】本発明の他の実施例の漏液センサ付き直熱型ヒ
ータの構成を示す図である。FIG. 3 is a diagram showing a configuration of a direct-heat type heater with a liquid leakage sensor according to another embodiment of the present invention.
【図４】上記実施例の漏液センサ付き直熱型ヒータにお
いて漏液が発生して場合のヒータの電気抵抗の経時変化
の様子を示す特性図である。FIG. 4 is a characteristic diagram showing how the electrical resistance of the heater changes over time when a leak occurs in the direct-heat heater with a leak sensor of the above embodiment.
【図５】上記実施例の漏液センサ付き直熱型ヒータにお
いて漏液が発生して場合のヒータ電流の経時変化の様子
を示す特性図である。FIG. 5 is a characteristic diagram showing how the heater current changes over time when liquid leakage occurs in the direct-heat heater with a liquid leakage sensor of the embodiment.
【図６】従来の直熱型ヒータの構成を示す図である。FIG. 6 is a diagram showing a configuration of a conventional direct-heat-type heater.
1 洗浄槽 2 洗浄液 3 石英チューブ 4 ヒータ 5 ヒータ電源 6 電圧測定ユニット 7 電流測定ユニット 8 警報発生ユニット 1 Cleaning tank 2 Cleaning liquid 3 Quartz tube 4 Heater 5 Heater power supply 6 Voltage measurement unit 7 Current measurement unit 8 Alarm generation unit
Claims (5)
直熱型ヒータと、 この直熱型ヒータに流れる電流若しくはこのヒータの抵
抗又はこれらの双方を検出する検出手段と、 この検出手段による検出値が予め定められた許容範囲を
超えたときに前記直熱型ヒータが破損したと見做して警
報を発生する警報発生手段とを備えたことを特徴とする
漏液センサ付き直熱型ヒータ。1. A direct heating type heater which is directly charged into a processing tank for storing a processing liquid, a detecting means for detecting a current flowing through the direct heating type heater and / or a resistance of the heater, and a detecting means for detecting both And an alarm generating means for generating an alarm when the detected value exceeds a predetermined allowable range by assuming that the direct heat type heater has been damaged. Type heater.
直熱型ヒータと、 この直熱型ヒータ内部のガスを検知するガス検出手段
と、 このガス検出手段で前記処理液の組成のガスを検出した
ときに前記直熱型ヒータが破損したと見做して警報を発
する警報発生手段とを備えたことを特徴とする漏液セン
サ付き直熱型ヒータ。2. A direct heating type heater directly charged into a processing tank for storing a processing liquid; gas detecting means for detecting gas inside the direct heating type heater; A direct-heat heater with a liquid leakage sensor, further comprising: an alarm generating means for issuing an alarm when the gas is detected and deeming the direct-heat heater to be damaged.
直熱型ヒータと、 前記直熱型ヒータに流れる電流若しくはこのヒータの抵
抗又はこれらの双方を検出する電気特性検出手段と、 前記直熱型ヒータの内部のガスを検知するガス検出手段
と、 前記電気特性検出手段による検出値が予め定められた許
容範囲を超えるか、又は前記ガス検出手段で上記処理液
の組成のガスが検出されたときは、前記直熱型ヒータが
破損したと見做して警報を発生する警報発生手段とを備
えたことを特徴とする漏液センサ付き直熱型ヒータ。3. A direct heating type heater which is directly charged into a processing tank for storing a processing liquid; an electric characteristic detecting means for detecting a current flowing through the direct heating type heater, a resistance of the heater, or both of them; Gas detection means for detecting gas inside the direct-heat heater; and a detection value of the electric characteristic detection means exceeding a predetermined allowable range, or a gas having the composition of the processing liquid detected by the gas detection means. And an alarm generating means for generating an alarm when the direct-heat heater is considered to have been damaged.
あることを特徴とする漏液センサ付き直熱型ヒータ。4. The direct heat heater with a liquid leakage sensor according to claim 1, wherein the processing liquid is a processing liquid for processing a semiconductor wafer.
の酸性又はアルカリ性の洗浄液であることを特徴とする
漏液センサ付き直熱型ヒータ。5. The direct heat heater with a liquid leak sensor according to claim 4, wherein the processing liquid is an acidic or alkaline cleaning liquid for cleaning the surface of the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1784497A JPH10199666A (en) | 1997-01-16 | 1997-01-16 | Direct heating heater with liquid leakage sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1784497A JPH10199666A (en) | 1997-01-16 | 1997-01-16 | Direct heating heater with liquid leakage sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10199666A true JPH10199666A (en) | 1998-07-31 |
Family
ID=11954990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1784497A Pending JPH10199666A (en) | 1997-01-16 | 1997-01-16 | Direct heating heater with liquid leakage sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10199666A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000008538A1 (en) * | 1998-08-06 | 2000-02-17 | BSH Bosch und Siemens Hausgeräte GmbH | Domestic appliance |
| JP2009508720A (en) * | 2005-09-20 | 2009-03-05 | シーメンス アクチエンゲゼルシヤフト | Method and apparatus for monitoring an electric heater |
| KR20140052876A (en) * | 2012-10-25 | 2014-05-07 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate cleaning apparatus and substrate cleaning method |
-
1997
- 1997-01-16 JP JP1784497A patent/JPH10199666A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000008538A1 (en) * | 1998-08-06 | 2000-02-17 | BSH Bosch und Siemens Hausgeräte GmbH | Domestic appliance |
| JP2009508720A (en) * | 2005-09-20 | 2009-03-05 | シーメンス アクチエンゲゼルシヤフト | Method and apparatus for monitoring an electric heater |
| KR20140052876A (en) * | 2012-10-25 | 2014-05-07 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate cleaning apparatus and substrate cleaning method |
| JP2014103387A (en) * | 2012-10-25 | 2014-06-05 | Ebara Corp | Substrate cleaning apparatus and substrate cleaning method |
| US9704728B2 (en) | 2012-10-25 | 2017-07-11 | Ebara Corporation | Substrate cleaning apparatus and substrate cleaning method |
| US9842732B2 (en) | 2012-10-25 | 2017-12-12 | Ebara Corporation | Substrate cleaning apparatus and substrate cleaning method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0795625A1 (en) | Thin film deposition method and gas sensor made by the method | |
| JPH10199666A (en) | Direct heating heater with liquid leakage sensor | |
| JPH07167823A (en) | Collating electrode for electrochemical measurement of partial pressure of oxygen in ionic melt | |
| JP2010256238A (en) | Electrode reproduction processing method of oxygen sensor | |
| JP2019174143A (en) | Thermal flow sensor device and flow rate correction method | |
| KR101792935B1 (en) | Heater abnormality detecting apparatus, processing liquid supplying apparatus, and substrate processing system | |
| JPH05317843A (en) | Ultra-pure water heater and ultra-pure water heating method | |
| JP2001056309A (en) | Conductivity detection electrode and conductivity measuring apparatus using the same | |
| KR100752653B1 (en) | Apparatus for substrate wet treating having heating part in chemical bath and method of heating chemical for substrate treating using the apparatus | |
| JP5042150B2 (en) | Gas sensor | |
| KR0161442B1 (en) | Wet-station apparatus having a monitoring system of quartz heater | |
| JP4917445B2 (en) | Combined gas alarm device | |
| JPS5968569A (en) | Preheating control device of diesel engine | |
| JPS5939030A (en) | Pure-water washer | |
| KR0118593Y1 (en) | Quartz heater system of wet station | |
| JP2004309427A (en) | Pin hole detector of quartz heater | |
| CN213422330U (en) | Liquid level meter for emulsion treatment | |
| JPH04306835A (en) | Damage detector of quartz heater | |
| JP7060206B2 (en) | Board processing equipment and board processing method | |
| JPH0942600A (en) | Chemical supply device | |
| JP3672290B2 (en) | Method and apparatus for measuring redox potential | |
| JP4998143B2 (en) | Quartz heater, substrate processing apparatus using the same, damage detection method for quartz heater, and substrate processing control method using the same | |
| JP2009239060A (en) | Temperature detecting device for substrate processor | |
| JP4014060B2 (en) | Redox potential measuring apparatus and method | |
| JPH11295264A (en) | Solid electrolytic carbon dioxide gas sensor and correction method thereof |