JPH10189828A - Low-temperature baked ceramic composition and manufacturing method of low-temperature baked ceramic - Google Patents
Low-temperature baked ceramic composition and manufacturing method of low-temperature baked ceramicInfo
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- JPH10189828A JPH10189828A JP8350072A JP35007296A JPH10189828A JP H10189828 A JPH10189828 A JP H10189828A JP 8350072 A JP8350072 A JP 8350072A JP 35007296 A JP35007296 A JP 35007296A JP H10189828 A JPH10189828 A JP H10189828A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、多層回路基板にお
ける絶縁基板として有用な低温焼成磁器組成物と、低温
焼成磁器の製造方法に関するものであり、例えば集積回
路（ＩＣ）や電子部品を多層に積層し、焼成してなる銅
配線可能な特に高周波用の低誘電率、低誘電損失を備え
た低温焼成磁器組成物および低温焼成磁器の製造方法の
改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-temperature fired porcelain composition useful as an insulating substrate in a multilayer circuit board and a method for producing a low-temperature fired porcelain. For example, an integrated circuit (IC) or an electronic component is formed into a multilayer. The present invention relates to a low-temperature fired porcelain composition having a low dielectric constant and a low dielectric loss, particularly for high frequencies, which can be laminated and fired for copper wiring, and to an improvement in a method of manufacturing the low-temperature fired porcelain.
【０００２】[0002]
【従来技術】従来より、セラミック配線基板としては、
絶縁基板がアルミナなどのセラミックスからなるアルミ
ナ質配線基板が多用されているが、近年、高度情報化時
代を迎え、半導体素子はより高速化、高集積化、実装の
より高密度化が進み、誘電率の大きなアルミナ基板（３
ＧＨｚでの比誘電率は９〜９．５）は高周波回路基板等
には不適切である。つまり、信号を高速で伝搬させるた
めには絶縁基板材料には、より低い誘電率が要求されて
いる。また、マイクロ波、ミリ波対応として低損失化も
要求されている。2. Description of the Related Art Conventionally, as a ceramic wiring board,
Alumina wiring boards made of ceramics such as alumina are widely used as the insulating substrate. High alumina substrate (3
The relative dielectric constant of 9 to 9.5 at GHz is not suitable for a high-frequency circuit board or the like. That is, in order to propagate a signal at a high speed, an insulating substrate material is required to have a lower dielectric constant. In addition, low loss is required for microwave and millimeter wave applications.
【０００３】さらに、多層回路基板に種々の電子部品や
入出力端子等を接続する工程上で基板に加わる応力から
基板が破壊したり、欠けを生じたりすることを防止する
為に材料の機械的強度が高いことも要求されている。Further, in order to prevent the substrate from being broken or chipped due to stress applied to the substrate in the process of connecting various electronic components, input / output terminals, etc. to the multilayer circuit board, the material is mechanically controlled. High strength is also required.
【０００４】そこで、上述した低誘電率化に対応し得る
セラミック材料として、例えば、ガラスと無機質フィラ
ーとの混合物を成形、焼成してなる、いわゆるガラスセ
ラミックスは、誘電率が３〜７程度と低いことから、高
周波用絶縁基板として注目されている。Therefore, as a ceramic material capable of coping with the above-mentioned low dielectric constant, for example, a so-called glass ceramic obtained by molding and firing a mixture of glass and an inorganic filler has a low dielectric constant of about 3 to 7. For this reason, it has attracted attention as a high-frequency insulating substrate.
【０００５】また、このガラスセラミックスは、８００
〜１０００℃の低温で焼成することができることから、
配線用導体として、銅、金、銀などの低抵抗金属を使用
できるという長所を有する。[0005] Further, this glass ceramic is 800
Because it can be fired at a low temperature of ~ 1000 ° C,
An advantage is that a low-resistance metal such as copper, gold, or silver can be used as the wiring conductor.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来の
ガラスセラミックス材料は、誘電率が低いものの、信号
の周波数が１０ＧＨｚ以上のマイクロ波に対して、その
誘電損失が２０×１０-4以上と高く、このような高周波
用としては実用化し得るに十分な特性を有していないも
のであった。しかも、このガラスセラミックスは、ガラ
スを用いることからアルミナなどのセラミックスに比較
して、強度が低く抗折強度が１００〜１５０ＭＰａと低
く、その取扱いや応力が付加されるような過酷な使用環
境下では使用できないという問題もあった。However, although the conventional glass ceramic material has a low dielectric constant, its dielectric loss is as high as 20 × 10 -4 or more with respect to a microwave having a signal frequency of 10 GHz or more. Such a high-frequency device does not have characteristics sufficient for practical use. Moreover, this glass ceramic has a low strength and a low bending strength of 100 to 150 MPa as compared with ceramics such as alumina due to the use of glass, and in a severe use environment where handling and stress are added. There was also a problem that it could not be used.
【０００７】従って、本発明は、銅、金、銀等の低抵抗
金属と同時焼成が可能であり、しかも低誘電率および高
周波領域で低誘電正接を有し、且つ高強度の低温焼成磁
器組成物と低温焼成磁器の製造方法を提供することを目
的とするものである。Accordingly, the present invention provides a low-temperature fired porcelain composition which can be fired simultaneously with a low-resistance metal such as copper, gold or silver, has a low dielectric constant and a low dielectric loss tangent in a high-frequency region, and has a high strength. It is an object of the present invention to provide a method for manufacturing an article and a low-temperature fired porcelain.
【０００８】[0008]
【課題を解決するための手段】本発明者は、上記問題点
を鋭意検討した結果、Ｚｎ，Ｓｉを特定比率で含有する
複合酸化物に対して、Ｂ2 Ｏ3 、あるいは少なくともＳ
ｉＯ2 とＢ2 Ｏ3 とを含むガラスを添加することにより
複合酸化物中から生成するＺｎを主とする液相とＢ2 Ｏ
3 中のＢ（ホウ素）成分による液相反応が生じ僅かなＢ
2 Ｏ3 により、８００〜１０００℃以下の温度で焼成で
き、しかもを焼成によって、結晶相として、少なくとも
Ｚｎ、およびＳｉを含むウイレマイト結晶相やＳｉＯ2
系結晶相を析出させることにより、低い比誘電率と低い
誘電正接を得ることができることを知見し、本発明に至
った。Means for Solving the Problems As a result of intensive studies on the above problems, the present inventor has found that B 2 O 3 , or at least S 2 O 3 , can be added to a composite oxide containing Zn and Si at a specific ratio.
A liquid phase mainly composed of Zn generated from a composite oxide by adding a glass containing iO 2 and B 2 O 3 and B 2 O
Liquid phase reaction by B (boron) component in 3
By using 2 O 3 , it can be fired at a temperature of 800 to 1000 ° C. or lower, and by firing, a willemite crystal phase containing at least Zn and Si or SiO 2
The present inventors have found that a low relative dielectric constant and a low dielectric loss tangent can be obtained by precipitating a system crystal phase, and have reached the present invention.
【０００９】即ち、本発明の低温焼成磁器組成物は、少
なくともＺｎとＳｉとを含み、該金属の原子比による組
成を Ｚｎ・ｘＳｉ と表した時、０．３≦ｘ≦６を満足する複合酸化物を８
５〜９９．９重量％と、Ｂ2 Ｏ3 を０．１〜１５重量％
とからなることを特徴とするもの、または、少なくとも
ＺｎとＳｉとを含み、該金属の原子比による組成を Ｚｎ・ｘＳｉ と表した時、０．３≦ｘ≦６を満足する複合酸化物を８
０〜９９．５重量％と、少なくともＳｉＯ2 およびＢ2
Ｏ3 を含有するガラス０．５〜２０重量％とからなるこ
とを特徴とするものであり、かかる両組成物中には、少
なくともＺｎおよびＳｉを含むウイレマイト結晶相およ
び／またはＳｉＯ2 系結晶相を含むことを特徴とし、３
０〜６０ＧＨｚでの誘電率（εｒ）が６以下、誘電損失
が１５×１０-4以下の特性を具備することを特徴とする
ものである。That is, the low-temperature fired porcelain composition of the present invention contains at least Zn and Si, and when the composition according to the atomic ratio of the metal is represented by Zn.xSi, a composite satisfying 0.3 ≦ x ≦ 6. 8 oxide
5 to 99.9 wt% and, B 2 O 3 and 0.1 to 15 wt%
Or a composite oxide that contains at least Zn and Si and that satisfies 0.3 ≦ x ≦ 6 when the composition according to the atomic ratio of the metal is represented by Zn · xSi. 8
0-99.5% by weight and at least SiO 2 and B 2
And 0.5 to 20% by weight of a glass containing O 3 , and in both compositions, a willemite crystal phase containing at least Zn and Si and / or a SiO 2 -based crystal phase Is characterized by including 3
It has a characteristic that the dielectric constant (εr) at 0 to 60 GHz is 6 or less and the dielectric loss is 15 × 10 −4 or less.
【００１０】また、低温焼成磁器の製造方法としては、
少なくともＺｎとＳｉとを含み、該金属の原子比による
組成を Ｚｎ・ｘＳｉ と表した時、０．３≦ｘ≦６を満足する複合酸化物を８
５〜９９．９重量％と、Ｂ2 Ｏ3 を０．１〜１５重量％
とからなる組成物、または上記複合酸化物を８０〜９
９．５重量％と、少なくともＳｉＯ2 とＢ2 Ｏ3 とを含
むガラスを０．５〜２０重量％とからなる組成物を所定
形状に成形後、酸化あるいは非酸化性雰囲気中、８００
℃〜１０００℃で焼成することを特徴とするものであ
る。[0010] Further, as a method for producing low-temperature fired porcelain,
When the composition according to the atomic ratio of the metal is at least Zn.xSi containing at least Zn and Si, a composite oxide satisfying 0.3 ≦ x ≦ 6 is expressed as 8
5 to 99.9 wt% and, B 2 O 3 and 0.1 to 15 wt%
Or the composite oxide described above in the range of 80 to 9
And 9.5 wt%, after molding a composition comprising 0.5 to 20 wt% of glass containing at least SiO 2 and B 2 O 3 into a predetermined shape in an oxidizing or non-oxidizing atmosphere, 800
It is characterized in that it is fired at a temperature of from 1000C to 1000C.
【００１１】[0011]
【発明の実施の形態】本発明の低温焼成磁器組成物は、
少なくとも金属元素としてＺｎとＳｉとを含む複合酸化
物であり、該複合酸化物を構成する金属の原子比を Ｚｎ・ｘＳｉ と表した時、０．３≦ｘ≦６を満足する複合酸化物を主
成分とするものである。この主成分組成を上記の範囲に
限定したのは、ｘ値がｙ＜０．３ではＺｎＯ相が過剰と
なり誘電特性が劣化する。一方ｙ＞６ではＳｉＯ2 相が
過剰となり焼結性が劣化しＢ2 Ｏ3 量を２０重量％以上
添加しないと磁器が緻密化しなくなるためである。ｘ値
の望ましい範囲は、０．５≦ｘ≦２である。BEST MODE FOR CARRYING OUT THE INVENTION The low-temperature fired porcelain composition of the present invention comprises:
A composite oxide containing at least Zn and Si as metal elements, and when the atomic ratio of the metal constituting the composite oxide is represented by Zn · xSi, a composite oxide satisfying 0.3 ≦ x ≦ 6 is obtained. It is the main component. The reason why the main component composition is limited to the above range is that when the x value is y <0.3, the ZnO phase becomes excessive and the dielectric characteristics deteriorate. On the other hand, if y> 6, the SiO 2 phase becomes excessive and the sinterability deteriorates, and the porcelain cannot be densified unless the amount of B 2 O 3 is added to 20% by weight or more. A desirable range of the x value is 0.5 ≦ x ≦ 2.
【００１２】本発明の第１の態様によれば、上記主成分
８５〜９９．９重量％に対してＢ2Ｏ3 を０．１〜１５
重量％の割合で配合する。ここで、組成を上記のように
限定したのは、Ｂ2 Ｏ3 量が０．１重量％より少ない
か、言い換えれば、少なくともＺｎとＳｉとを含む複合
酸化物の量が９９．９重量％より多いと、８００〜１０
００℃の温度で磁器が十分に緻密化することができな
い。一方、Ｂ2 Ｏ3 の量が１５重量％より多いか、言い
換えれば、ＺｎおよびＳｉを含む複合酸化物量が８５重
量％より少ないと、７００℃以下の低温で液相が流失し
磁器の形状を損ない製品形状を保てず、また磁器特性の
点から３０〜６０ＧＨｚの高周波領域における誘電正接
が１５×１０-4以上と高くなる。上記組成物の望ましい
範囲は、上記ＺｎおよびＳｉを含む複合酸化物からなる
主成分が９０〜９９重量％と、Ｂ2 Ｏ3 が１〜１０重量
％の割合で存在することが望ましい。According to the first aspect of the present invention, B 2 O 3 is contained in an amount of 0.1 to 15 with respect to 85 to 99.9% by weight of the main component.
It is blended in a ratio of weight%. The reason for limiting the composition as described above is that the amount of B 2 O 3 is less than 0.1% by weight, in other words, the amount of the composite oxide containing at least Zn and Si is 99.9% by weight. More than 800-10
At a temperature of 00 ° C., the porcelain cannot be sufficiently densified. On the other hand, if the amount of B 2 O 3 is more than 15% by weight, in other words, if the amount of the composite oxide containing Zn and Si is less than 85% by weight, the liquid phase flows away at a low temperature of 700 ° C. or less, and the shape of the porcelain is reduced. In terms of porcelain characteristics, the dielectric loss tangent in a high frequency range of 30 to 60 GHz is increased to 15 × 10 −4 or more from the viewpoint of porcelain characteristics. Desired range of the composition, and the main component is 90 to 99 wt% of a composite oxide containing the Zn and Si, it is desirable that B 2 O 3 is present in a proportion of 1-10 wt%.
【００１３】また、本発明の第２の態様によれば、本発
明の低温焼成磁器組成物は、上記主成分８０〜９９．５
重量％に対して、少なくともＳｉＯ2 およびＢ2 Ｏ3 を
含有するガラスを０．５〜２０重量％の割合で配合す
る。ここで、組成を上記のように限定したのは、上記ガ
ラス量が０．５重量％より少ないか、言い換えれば、少
なくともＺｎとＳｉとを含む複合酸化物の量が９９．５
重量％より多いと、８００〜１０００℃の温度で磁器が
十分に緻密化することができない。一方、ガラス量が２
０重量％より多いか、言い換えれば、ＺｎおよびＳｉを
含む複合酸化物量が８０重量％より少ないと、７００℃
以下の低温で液相が流失し磁器の形状を損ない製品形状
を保てず、また磁器特性の点から３０〜６０ＧＨｚの高
周波領域における誘電正接が１５×１０-4以上と高くな
る。上記組成物の望ましい範囲は、上記ＺｎおよびＳｉ
を含む複合酸化物からなる主成分が９０〜９９重量％
と、少なくともＳｉＯ2 とＢ2 Ｏ3 を含有するガラスが
１〜１０重量％の割合で存在することが望ましい。According to a second aspect of the present invention, the low-temperature fired porcelain composition of the present invention comprises the above-mentioned main component of 80 to 99.5.
By weight%, blending at least a glass containing SiO 2 and B 2 O 3 in a proportion of 0.5 to 20 wt%. Here, the composition was limited as described above because the amount of the glass was less than 0.5% by weight, in other words, the amount of the composite oxide containing at least Zn and Si was 99.5.
If the amount is more than the weight percentage, the porcelain cannot be sufficiently densified at a temperature of 800 to 1000 ° C. On the other hand, when the amount of glass is 2
If the amount is more than 0% by weight, in other words, if the amount of the composite oxide containing Zn and Si is less than 80% by weight, 700 ° C.
At the following low temperature, the liquid phase is lost, the shape of the porcelain is damaged, and the product shape cannot be maintained. In addition, the dielectric loss tangent in the high frequency region of 30 to 60 GHz is increased to 15 × 10 −4 or more from the viewpoint of porcelain characteristics. The desirable range of the composition is the above Zn and Si
90 to 99% by weight of a main component composed of a composite oxide containing
It is desirable that glass containing at least SiO 2 and B 2 O 3 be present in a proportion of 1 to 10% by weight.
【００１４】また、上記第１および第２の態様の磁器組
成物は、いずれも８００〜１０００℃の温度範囲での焼
成によって相対密度９５％以上まで緻密化することがで
き、これによって形成される磁器は、図１の磁器組織の
概略図に示すように、それぞれ、少なくともＺｎ、およ
びＳｉを含むウイレマイト結晶相を主体とする結晶相１
と、Ｚｎ、ＢおよびＳｉを含有する非晶質の粒界相２と
から構成され、さらには、ＳｉＯ2 系結晶相３が含まれ
る場合もある。Further, the porcelain compositions of the first and second embodiments can be densified to a relative density of 95% or more by firing in a temperature range of 800 to 1000 ° C., and thus formed. As shown in the schematic diagram of the porcelain structure in FIG. 1, the porcelain has a crystal phase 1 mainly composed of a willemite crystal phase containing at least Zn and Si.
And an amorphous grain boundary phase 2 containing Zn, B and Si, and may further include a SiO 2 -based crystal phase 3.
【００１５】このように本発明によれば、磁器中に、少
なくともＺｎとＳｉを含むウイレマイト結晶相や、Ｓｉ
Ｏ2 系結晶相を析出させることにより比誘電率を６以下
に制御できるとともに、低い誘電正接を得ることができ
るのである。As described above, according to the present invention, in a porcelain, a willemite crystal phase containing at least Zn and Si,
By precipitating the O 2 -based crystal phase, the relative dielectric constant can be controlled to 6 or less, and a low dielectric loss tangent can be obtained.
【００１６】なお、本発明の第２の態様において用いる
ＳｉＯ2 、Ｂ2 Ｏ3 を含むガラスとしては、一般にホウ
ケイ酸系ガラス、ホウケイ酸亜鉛系ガラス、ホウケイ酸
鉛系ガラスなどが挙げられるが、特にＳｉＯ2 を５〜８
０重量％、Ｂ2 Ｏ3 を４〜５０重量％の割合でそれぞれ
含み、他の成分としてＡｌ2 Ｏ3 を３０重量％以下、ア
ルカリ金属酸化物を２０重量％以下の割合で含むものが
好適に使用され、これらの酸化物成分を所定割合で配合
したものを溶融、冷却し、ガラス化したものが使用され
る。As the glass containing SiO 2 and B 2 O 3 used in the second embodiment of the present invention, borosilicate glass, zinc borosilicate glass, lead borosilicate glass and the like are generally mentioned. Especially 5 to 8 of SiO 2
0 wt%, B a 2 O 3 comprise each at a ratio of 4-50 wt%, the Al 2 O 3 30 wt% or less other components, preferably those containing alkali metal oxides in a proportion of 20 wt% or less A mixture of these oxide components at a predetermined ratio is melted, cooled, and vitrified.
【００１７】また、本発明の低温焼成磁器の製造方法に
よれば、主成分原料として、Ｚｎ2ＳｉＯ4 や、ＳｉＯ
2 とＺｎＯとの様々な組み合わせによる化合物が使用さ
れる。また、かかる主成分原料に対して、Ｂ2 Ｏ3 また
はＳｉＯ2 とＢ2 Ｏ3 を含むガラスを添加混合する。な
お、出発原料としては、各金属の酸化物粉末のほかに、
焼結過程で酸化物を形成し得る炭酸塩、酢酸塩、硝酸塩
等の形態で添加できる。なお、調合組成において、Ｂ2
Ｏ3 、Ｚｎ2 ＳｉＯ4 、ＳｉＯ2 、ＺｎＯの酸化物原料
粉末は分散性を高め高い誘電率や低い誘電正接を得るた
めに２．０μｍ以下、特に１．０μｍ以下の微粉末であ
ることが望ましい。According to the method for producing a low-temperature fired porcelain of the present invention, Zn 2 SiO 4 or SiO 2
Compounds with various combinations of 2 and ZnO are used. Further, B 2 O 3 or glass containing SiO 2 and B 2 O 3 is added to and mixed with such a main component material. As starting materials, in addition to the oxide powder of each metal,
It can be added in the form of carbonate, acetate, nitrate, etc., which can form an oxide during the sintering process. In the composition, B 2
The oxide raw material powder of O 3 , Zn 2 SiO 4 , SiO 2 , and ZnO may be a fine powder of 2.0 μm or less, particularly 1.0 μm or less in order to improve dispersibility and obtain a high dielectric constant and a low dielectric loss tangent. desirable.
【００１８】本発明の第１の形態に基づくと、上記の主
成分原料に対して、焼結助剤としてＢ2 Ｏ3 粉末あるい
は焼結過程で酸化物を形成し得るＢ2 Ｓ3 、Ｈ2 ＢＯ3
等をＢ2 Ｏ3 として、主成分原料８５〜９９．９重量
％、Ｂ2 Ｏ3 ０．１〜１５重量％となるように添加混合
する。According to the first aspect of the present invention, B 2 O 3 powder or B 2 S 3 , H which can form an oxide during the sintering process is used as a sintering aid for the above-mentioned main component materials. 2 BO 3
Such as B 2 O 3, and main component material 85 to 99.9 wt%, B 2 O 3 0.1 to 15 is added mixed so that weight percent.
【００１９】また、本発明の第２の形態に基づくと、上
記の主成分原料に対して、焼結助剤として前述したよう
なＳｉＯ2 、Ｂ2 Ｏ3 を含むガラス粉末を、主成分原料
８０〜９９．５重量％、ＳｉＯ2 、Ｂ2 Ｏ3 を含むガラ
ス０．５〜２０重量％となるように添加混合する。Further, according to the second aspect of the present invention, a glass powder containing SiO 2 and B 2 O 3 as a sintering aid as described above is added to the above-mentioned main component material. 80 to 99.5% by weight, admixed so that the glass 0.5 to 20 wt% containing SiO 2, B 2 O 3.
【００２０】上記のような割合で添加混合した混合粉末
に適宜バインダ−を添加した後、例えば、金型プレス、
冷間静水圧プレス、押し出し成形、ドクターブレード
法、圧延法等により任意の形状に成形後、酸化雰囲気中
または、Ｎ2 ，Ａｒ等の非酸化性雰囲気中において８０
０℃〜１０００℃、特に９００〜１０００℃の温度で
０．１〜５時間焼成することにより相対密度９５％以上
に緻密化することができる。この時の焼成温度が８００
℃より低いと、磁器が十分に緻密化せず、１０００℃を
越えると緻密化は可能であるが、銅導体を用いることが
出来なくなるためである。After appropriately adding a binder to the mixed powder added and mixed at the above ratio, for example, a mold press,
After being formed into an arbitrary shape by cold isostatic pressing, extrusion molding, doctor blade method, rolling method, or the like, 80 in an oxidizing atmosphere or a non-oxidizing atmosphere such as N 2 , Ar, etc.
By baking at a temperature of 0 ° C. to 1000 ° C., particularly 900 ° C. to 1000 ° C. for 0.1 to 5 hours, the relative density can be increased to 95% or more. The firing temperature at this time is 800
When the temperature is lower than ℃, the porcelain is not sufficiently densified, and when the temperature exceeds 1000 ℃, densification is possible, but a copper conductor cannot be used.
【００２１】次に、上記のような割合で添加混合した混
合粉末に適宜バインダ−を添加した後、例えば、金型プ
レス、冷間静水圧プレス、押し出し成形、ドクターブレ
ード法、圧延法等により任意の形状に成形後、Ｎ2 、Ａ
ｒ等の非酸化性雰囲気中、または空気中などの酸化性雰
囲気中で８００℃〜１０００℃、特に９００〜１０００
℃の温度で０．１〜５時間焼成することにより相対密度
９５％以上に緻密化することができる。この時の焼成温
度が８００℃より低いと、磁器が十分に緻密化せず、１
０００℃を越えると緻密化は可能であるが、銅、銀など
の導体と同時焼成ができなくなる。因みに、同時焼成時
に、導体として銅を用いる場合には非酸化性雰囲気と
し、銀を用いる場合には非酸化性または酸化性雰囲気で
焼成することが必要である。Next, after a binder is appropriately added to the mixed powder added and mixed in the above ratio, the mixture is arbitrarily formed by, for example, a die press, a cold isostatic press, an extrusion molding, a doctor blade method, a rolling method, or the like. N 2 , A
800 ° C. to 1000 ° C., particularly 900 to 1000 ° C. in a non-oxidizing atmosphere such as r or an oxidizing atmosphere such as air.
By sintering at a temperature of ° C for 0.1 to 5 hours, it is possible to densify to a relative density of 95% or more. If the firing temperature at this time is lower than 800 ° C., the porcelain will not be sufficiently densified and
If the temperature exceeds 000 ° C., densification is possible, but simultaneous sintering with a conductor such as copper or silver becomes impossible. Incidentally, at the time of simultaneous firing, it is necessary to fire in a non-oxidizing atmosphere when copper is used as the conductor and in a non-oxidizing or oxidizing atmosphere when using silver as the conductor.
【００２２】本発明の上記方法によれば、ＺｎおよびＳ
ｉからなる複合酸化物とＢ2 Ｏ3 、またはＳｉＯ2 、Ｂ
2 Ｏ3 を含むガラスを組み合わせることにより、複合酸
化物から生成するＺｎを主とする液相とＢ2 Ｏ3 中また
はガラス中のＢ（ホウ素）成分のより活性な液相反応が
生じる結果、少ない焼結助剤量で磁器を緻密化すること
ができる。そのために、誘電正接を増大させる要因とな
る粒界の非晶質相の量を最小限に押さえることができ
る。このため高周波領域においてより低い誘電正接を得
ることができるのである。According to the above method of the present invention, Zn and S
i and B 2 O 3 , or SiO 2 , B
By combining the glass containing 2 O 3 , a more active liquid phase reaction between the liquid phase mainly composed of Zn generated from the composite oxide and the B (boron) component in B 2 O 3 or glass occurs, Porcelain can be densified with a small amount of sintering aid. For this reason, the amount of the amorphous phase at the grain boundary, which causes an increase in the dielectric loss tangent, can be minimized. Therefore, a lower dielectric loss tangent can be obtained in a high frequency region.
【００２３】また、本発明における磁器組成物は、８０
０〜１０００℃で焼成可能であることから、特に銅、
金、銀などを配線する配線基板の絶縁基板として用いる
ことができる。かかる磁器組成物を用いて配線基板を作
製する場合には、例えば、上記のようにして調合した混
合粉末を公知のテープ成形法、例えばドクターブレード
法、圧延法等に従い、絶縁層形成用のグリーンシートを
作製した後、そのシートの表面に配線回路層用として、
銅、金および銀のうちの少なくとも１種の金属、特に、
銅粉末を含む導体ペーストを用いて、グリーンシート表
面に配線パターンにスクリーン印刷法、グラビア印刷法
等によって回路パターン状に印刷し、場合によってはシ
ートにスルーホールやビアホール形成後、上記導体ペー
ストを充填する。その後、複数のグリーンシートを積層
圧着した後、上述した条件で焼成することにより、配線
層と絶縁層とを同時に焼成することができる。The porcelain composition according to the present invention comprises
Since it can be fired at 0 to 1000 ° C., particularly copper,
It can be used as an insulating substrate of a wiring board for wiring gold, silver, and the like. In the case of manufacturing a wiring board using such a porcelain composition, for example, according to a known tape forming method, for example, a doctor blade method, a rolling method, or the like, the mixed powder prepared as described above is used to form an insulating layer forming green. After making the sheet, on the surface of the sheet for the wiring circuit layer,
At least one metal of copper, gold and silver, especially
Using a conductive paste containing copper powder, print the wiring pattern on the surface of the green sheet in a circuit pattern by screen printing, gravure printing, etc. In some cases, fill the above conductive paste after forming through holes and via holes in the sheet I do. After that, a plurality of green sheets are stacked and pressed, and then fired under the above-described conditions, whereby the wiring layer and the insulating layer can be fired simultaneously.
【００２４】[0024]
実施例１ 平均粒径が１μｍ以下のＺｎ2 ＳｉＯ4 、ＺｎＯ、Ｓｉ
Ｏ2 、Ｂ2 Ｏ3 を表１の組成に従い混合した。そして、
この混合物に有機バインダー、可塑剤、トルエンを添加
し、ドクターブレード法により厚さ３００μｍのグリー
ンシートを作製した。そして、このグリーンシートを５
枚積層し、５０℃の温度で１００ｋｇ／ｃｍ2 の圧力を
加えて熱圧着した。得られた積層体を水蒸気含有／窒素
雰囲気中で、７００℃で脱バインダーした後、乾燥窒素
中で表１の条件において焼成して多層基板用磁器を得
た。Example 1 Zn 2 SiO 4 , ZnO, Si having an average particle size of 1 μm or less
O 2 and B 2 O 3 were mixed according to the composition shown in Table 1. And
An organic binder, a plasticizer, and toluene were added to this mixture, and a green sheet having a thickness of 300 μm was prepared by a doctor blade method. And this green sheet is 5
The sheets were laminated and subjected to thermocompression bonding at a temperature of 50 ° C. while applying a pressure of 100 kg / cm 2 . After debinding the obtained laminate in a steam-containing / nitrogen atmosphere at 700 ° C., it was fired in dry nitrogen under the conditions shown in Table 1 to obtain a ceramic for a multilayer substrate.
【００２５】得られた焼結体について誘電率、誘電正接
を以下の方法で評価した。測定は、形状直径１〜５ｍ
ｍ、厚み２〜３ｍｍの試料を切り出し、６０ＧＨｚにて
ネットワークアナライザー、シンセサイズドスイーパー
を用いて誘電体円柱共振器法により行った。測定では、
ＮＲＤガイド（非放射性誘電体線路）で、誘電体共振器
の励起を行い、ＴＥ０２１，ＴＥ０３１モードの共振特
性より誘電率、誘電正接を算出した。測定の結果は表１
に示した。また、Ｘ線回折測定から、磁器の構成相を同
定し、試料Ｎo.４についてＸ線回折チャートを図２に示
した。The dielectric constant and dielectric loss tangent of the obtained sintered body were evaluated by the following methods. The measurement is 1-5m in shape diameter
A sample having a thickness of m and a thickness of 2 to 3 mm was cut out and subjected to a dielectric cylinder resonator method at 60 GHz using a network analyzer and a synthesized sweeper. In the measurement,
The dielectric resonator was excited by the NRD guide (non-radiative dielectric line), and the dielectric constant and the dielectric loss tangent were calculated from the resonance characteristics of the TE021 and TE031 modes. Table 1 shows the measurement results.
It was shown to. The constituent phases of the porcelain were identified from the X-ray diffraction measurement, and the X-ray diffraction chart of Sample No. 4 is shown in FIG.
【００２６】また、比較例として、Ｚｎ2 ＳｉＯ4 、Ｓ
ｉＯ2 に代わり、ＭｇＳｉＯ3 、ＣａＳｉＯ3 を用いて
同様に焼結体を作製し評価した（試料Ｎo.９、１０）。As a comparative example, Zn 2 SiO 4 , S
Similarly, sintered bodies were prepared using MgSiO 3 and CaSiO 3 instead of iO 2 and evaluated (samples Nos. 9 and 10).
【００２７】[0027]
【表１】 [Table 1]
【００２８】表１の結果から明らかなように、結晶相と
して、ウイレマイト結晶相（Ｚｎ2ＳｉＯ4 ）、ＳｉＯ
2 系結晶相が主として析出した本発明の磁器は、いずれ
も誘電率が６以下、６０ＧＨｚでの誘電正接が１５×１
０-4以下の優れた値を示した。As is evident from the results in Table 1, the crystal phases were willemite crystal phase (Zn 2 SiO 4 ), SiO 2
The porcelain of the present invention in which the second crystal phase is mainly deposited has a dielectric constant of 6 or less and a dielectric loss tangent at 60 GHz of 15 × 1.
Excellent values of 0 -4 or less were shown.
【００２９】これに対して、Ｂ2 Ｏ3 量が０．５重量％
未満である試料Ｎo.１では、焼成温度を１４００℃まで
高めないと緻密化することができず、本発明の目的に適
さないものであった。一方、Ｂ2 Ｏ3 量が１５重量％を
越える試料Ｎo.８は液相量が多いため焼成温度も低く、
誘電損失が増大し６０ＧＨｚにおいて誘電特性が評価で
きなかった。On the other hand, the content of B 2 O 3 is 0.5% by weight.
In Sample No. 1, which was less than 1, the densification was not possible unless the firing temperature was raised to 1400 ° C., which was not suitable for the purpose of the present invention. On the other hand, sample No. 8 in which the amount of B 2 O 3 exceeds 15% by weight has a low firing temperature due to a large amount of liquid phase,
The dielectric loss increased, and the dielectric characteristics could not be evaluated at 60 GHz.
【００３０】なお、本発明品の磁器の液相に対して、Ｘ
線マイクロアナライザーによって分析した結果、いずれ
も液相中からＺｎ、Ｂおよび少量のＳｉ元素が検出され
た。The liquid phase of the porcelain of the present invention is represented by X
As a result of analysis by a line microanalyzer, Zn and B and a small amount of Si element were detected in the liquid phase in each case.
【００３１】Ｚｎに対してＳｉの比率が少ない（ｙ＜
０．３）試料Ｎo.１１では過剰なＺｎＯ相が析出し、こ
のため誘電損失が増大し６０ＧＨｚにおいて誘電特性が
評価できなかった。The ratio of Si to Zn is small (y <
0.3) In sample No. 11, an excessive ZnO phase was precipitated, which increased the dielectric loss, and the dielectric properties could not be evaluated at 60 GHz.
【００３２】一方、Ｚｎに対してＳｉの比率が多い（ｙ
＞６）試料Ｎo.１８では過剰なＳｉＯ２相が析出し、ま
たＺｎ量が不十分であるため、Ｂ2 Ｏ3 中のＢ成分と液
相を形成することが困難となり、Ｂ2 Ｏ3 を１５重量％
以上添加しなければ磁器が緻密化しない。、Ｂ2 Ｏ3 を
１５重量％以上添加したこの系では、誘電特性が劣化し
た。On the other hand, the ratio of Si to Zn is large (y
> 6) to precipitate the sample No.18 in excess SiO2 phase, and because the amount of Zn is insufficient, it becomes difficult to form a B 2 O 3 in the B component and the liquid phase, the B 2 O 3 15% by weight
If not added, the porcelain will not be densified. In this system to which B 2 O 3 was added in an amount of 15% by weight or more, the dielectric properties deteriorated.
【００３３】また、比較例として、ＭｇＳｉＯ3 やＣａ
ＳｉＯ3 を用いた試料Ｎo.９，１０では、Ｂ2 Ｏ3 量を
１５重量％以上添加しないと緻密化しないため十分な誘
電特性が得られず、本発明の目的に適さないものであっ
た。As comparative examples, MgSiO 3 and Ca
In Samples Nos. 9 and 10 using SiO 3 , if the amount of B 2 O 3 was not more than 15% by weight, densification would not be achieved, and sufficient dielectric properties could not be obtained, which was not suitable for the purpose of the present invention. .
【００３４】実施例２ 表２の組成からなるガラス粉末と平均粒径が１μｍ以下
のＺｎ2 ＳｉＯ4 、ＳｉＯ2 を用いて表３の組成になる
ように混合した。そして、この混合物に有機バインダ
ー、可塑剤、トルエンを添加し、ドクターブレード法に
より厚さ３００μｍのグリーンシートを作製した。そし
て、このグリーンシートを５枚積層し、５０℃の温度で
１００ｋｇ／ｃｍ2 の圧力を加えて熱圧着した。得られ
た積層体を水蒸気含有／窒素雰囲気中で、７００℃で脱
バインダーした後、乾燥窒素中で表１の条件において焼
成して多層基板用磁器を得た。Example 2 Glass powder having the composition shown in Table 2 was mixed with Zn 2 SiO 4 and SiO 2 having an average particle diameter of 1 μm or less so as to obtain the composition shown in Table 3. Then, an organic binder, a plasticizer, and toluene were added to the mixture, and a green sheet having a thickness of 300 μm was prepared by a doctor blade method. Then, five green sheets were laminated and thermocompression-bonded at a temperature of 50 ° C. by applying a pressure of 100 kg / cm 2 . After debinding the obtained laminate in a steam-containing / nitrogen atmosphere at 700 ° C., it was fired in dry nitrogen under the conditions shown in Table 1 to obtain a ceramic for a multilayer substrate.
【００３５】得られた焼結体について誘電率、誘電正接
および結晶相の同定を実施例１と同様な方法で測定評価
した。測定の結果は表１に示した。また、Ｘ線回折測定
から、また、試料Ｎo.４３についてＸ線回折チャートを
図３に示した。With respect to the obtained sintered body, the dielectric constant, dielectric loss tangent, and identification of the crystal phase were measured and evaluated in the same manner as in Example 1. The results of the measurement are shown in Table 1. FIG. 3 shows an X-ray diffraction chart of the sample No. 43 from the X-ray diffraction measurement.
【００３６】また、比較例として、Ｚｎ2 ＳｉＯ4 、Ｓ
ｉＯ2 に代わり、ＭｇＳｉＯ3 、ＣａＳｉＯ3 を用いて
同様に焼結体を作製し評価した（試料Ｎo.３８、３
９）。As a comparative example, Zn 2 SiO 4 , S
Similarly, sintered bodies were prepared and evaluated using MgSiO 3 and CaSiO 3 instead of iO 2 (Sample Nos. 38, 3).
9).
【００３７】[0037]
【表２】 [Table 2]
【００３８】[0038]
【表３】 [Table 3]
【００３９】表２、表３の結果から明らかなように、結
晶相として、ウイレマイト結晶相（Ｚｎ2 ＳｉＯ4 結晶
相やＳｉＯ2 系結晶が主として析出した本発明の磁器
は、いずれも誘電率が６以下、６０ＧＨｚでの誘電正接
が１５×１０-4以下の優れた値を示した。As is clear from the results shown in Tables 2 and 3, the porcelain of the present invention in which a willemite crystal phase (a Zn 2 SiO 4 crystal phase or a SiO 2 crystal is mainly precipitated) as a crystal phase has a dielectric constant. The dielectric loss tangent at 6 GHz or less and 60 GHz showed an excellent value of 15 × 10 −4 or less.
【００４０】これに対して、少なくともＳｉＯ2 、Ｂ2
Ｏ3 を含むガラス量が０．５重量％未満である試料Ｎo.
１９では、焼成温度を１４００℃まで高めないと緻密化
することができず、本発明の目的に適さないものであっ
た。一方、少なくともＳｉＯ2 、Ｂ2 Ｏ3 を含むガラス
量が２０重量％を越える試料Ｎo.２７は液相量が多いた
め焼成温度も低く、誘電損失が増大し６０ＧＨｚにおい
て誘電特性が評価できなかった。On the other hand, at least SiO 2 , B 2
Sample No. having an amount of glass containing O 3 of less than 0.5% by weight.
In No. 19, densification was not possible unless the firing temperature was raised to 1400 ° C., which was not suitable for the purpose of the present invention. On the other hand, the sample No. 27 containing at least 20% by weight of glass containing at least SiO 2 and B 2 O 3 has a large amount of liquid phase, so the firing temperature is low, the dielectric loss increases, and the dielectric properties could not be evaluated at 60 GHz. .
【００４１】なお、本発明品の磁器の液相に対して、Ｘ
線マイクロアナライザーによって分析した結果、いずれ
も液相中からＺｎ、Ｂおよび少量のＳｉ元素が検出され
た。The liquid phase of the porcelain of the present invention is expressed by X
As a result of analysis by a line microanalyzer, Zn and B and a small amount of Si element were detected in the liquid phase in each case.
【００４２】Ｚｎに対してＳｉの比率が少ない（ｘ＜
０．３）試料Ｎo.４０では過剰なＺｎＯ相が析出し、こ
のため誘電損失が増大し６０ＧＨｚにおいて誘電特性が
評価できなかった。Ｚｎに対してＳｉの比率が多い（ｘ
＞６）試料Ｎo.４７では過剰なＳｉＯ2 相が析出し、ま
たＺｎ量が不十分であるため、ガラス中のＢ成分と液相
を形成することが困難となり、ガラスを２０重量％以上
添加しなければ磁器が緻密化しない。ガラスを２０重量
％を越えて添加した系では、誘電特性が劣化した。The ratio of Si to Zn is small (x <
0.3) In sample No. 40, an excessive ZnO phase was precipitated, which increased the dielectric loss, and the dielectric properties could not be evaluated at 60 GHz. The ratio of Si to Zn is large (x
> 6) In sample No. 47, an excessive SiO 2 phase was precipitated and the Zn content was insufficient, so that it was difficult to form a liquid phase with the B component in the glass, and the glass was added in an amount of 20% by weight or more. Otherwise, the porcelain will not densify. In a system in which glass was added in excess of 20% by weight, the dielectric properties deteriorated.
【００４３】また、比較例として、ＭｇＳｉＯ3 やＣａ
ＳｉＯ3 を用いた試料Ｎo.３８、３９では、ガラス量を
２０重量％以上添加しないと緻密化しないため十分な誘
電特性が得られず、本発明の目的に適さないものであっ
た。As comparative examples, MgSiO 3 and Ca
In Samples Nos. 38 and 39 using SiO 3 , if the amount of glass was not more than 20% by weight, densification was not achieved and sufficient dielectric properties could not be obtained, which was not suitable for the purpose of the present invention.
【００４４】実施例３ 上記実施例１中のＮo.４および実施例２のＮo.４３の磁
器を用いて、直径１〜３０ｍｍ、厚み２〜１５ｍｍの円
柱サンプル）を作製した（）。また比較として汎用
品のコージェライト系ガラスセラミックス（硼珪酸ガラ
ス７５重量％、Ａｌ2 Ｏ3 ２５重量％）、汎用の低純
度アルミナ（Ａｌ2 Ｏ3 ９５重量％、ＣａＯ、ＭｇＯ５
重量％）を用い同様にしてサンプルを作製した。作製
したサンプルを１ＧＨｚ、１０ＧＨｚ、２０ＧＨｚ、３
０ＧＨｚ、６０ＧＨｚの高周波、マイクロ波、ミリ波領
域において、誘電体円柱共振器法により誘電率と誘電正
接を測定した。結果を図４、５にそれぞれ示した。汎用
品のコージェライト系ガラスセラミックスは誘電率が５
と低く、汎用の低純度アルミナは誘電率は９と低いこと
がわかる。これに対して、本発明品はいずれも誘電率が
５と低い値であった。汎用品のガラスセラミックスは低
周波領域において誘電正接は７×１０-4と低いが、高周
波領域になるに従い特性が劣化してしまい２０ＧＨｚ以
上では２０×１０-4以上になってしまう。また、汎用の
低純度アルミナは６０ＧＨｚで４０×１０-4と高くなっ
た。一方、本発明品は、６０ＧＨｚでの高周波領域にお
いても誘電正接は１５×１０-4以下と低いものであっ
た。Example 3 A cylindrical sample having a diameter of 1 to 30 mm and a thickness of 2 to 15 mm was prepared using the porcelain of No. 4 in Example 1 and No. 43 of Example 2. For comparison, general-purpose cordierite-based glass ceramics (75% by weight of borosilicate glass, 25% by weight of Al 2 O 3 ), general-purpose low-purity alumina (95% by weight of Al 2 O 3 , CaO, MgO 5)
(% By weight) to prepare a sample in the same manner. The prepared samples were 1 GHz, 10 GHz, 20 GHz, 3
The dielectric constant and the dielectric loss tangent were measured by a dielectric cylinder resonator method in a high frequency range of 0 GHz, 60 GHz, microwaves and millimeter waves. The results are shown in FIGS. General-purpose cordierite glass ceramics have a dielectric constant of 5
It can be seen that the dielectric constant of general-purpose low-purity alumina is as low as 9. On the other hand, each of the products of the present invention had a low dielectric constant of 5, which was a low value. The dielectric loss tangent of a general-purpose glass ceramic is as low as 7 × 10 −4 in the low frequency region, but the characteristics are degraded as the frequency becomes higher, and the dielectric loss tangent becomes 20 × 10 −4 or more at 20 GHz or higher. In addition, general-purpose low-purity alumina was as high as 40 × 10 −4 at 60 GHz. On the other hand, the product of the present invention had a low dielectric loss tangent of 15 × 10 −4 or less even in a high frequency region at 60 GHz.
【００４５】[0045]
【発明の効果】以上詳述した通り、本発明の低温焼成磁
器組成物は、誘電率が低く、３０ＧＨｚ以上の高周波に
おいても誘電正接が小さいので、高周波用途のマイクロ
波用回路素子等において最適である。さらに、基板材料
の高強度化により入出力端子部に施すリードの接合や実
装における基板の信頼性を向上できる。しかも、８００
〜１０００℃で焼成されるため、Ｃｕ、Ａｕ、Ａｇ等に
よる配線を同時焼成により形成することができる。As described above in detail, the low-temperature fired porcelain composition of the present invention has a low dielectric constant and a small dielectric loss tangent even at a high frequency of 30 GHz or more. is there. Further, by increasing the strength of the substrate material, it is possible to improve the reliability of the substrate in bonding and mounting leads applied to the input / output terminals. And 800
Since the sintering is performed at a temperature of up to 1000 ° C., a wiring made of Cu, Au, Ag, or the like can be formed by simultaneous sintering.
【図１】本発明の誘電体磁器の組織の概略図である。FIG. 1 is a schematic view of a structure of a dielectric porcelain of the present invention.
【図２】本発明の誘電体磁器（試料Ｎo.４）のＸ線回折
チャート図である。FIG. 2 is an X-ray diffraction chart of a dielectric ceramic (sample No. 4) of the present invention.
【図３】本発明の誘電体磁器（試料Ｎo.４３）のＸ線回
折チャート図である。FIG. 3 is an X-ray diffraction chart of a dielectric ceramic (sample No. 43) of the present invention.
【図４】本発明品および従来品の誘電率の測定周波数と
の関係を示した図である。FIG. 4 is a diagram showing a relationship between a dielectric constant of a product of the present invention and a conventional product and a measurement frequency.
【図５】本発明品および従来品の誘電正接の測定周波数
との関係を示した図である。FIG. 5 is a diagram showing the relationship between the product of the present invention and the conventional product with respect to the measured frequency of dielectric loss tangent.
１ ウイレマイト結晶相（Ｗ） ２ 非晶質相（Ｇ） ３ ＳｉＯ2 相（Ｓ）1 Willemite crystal phase (W) 2 Amorphous phase (G) 3 SiO 2 phase (S)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０５Ｋ 3/46 Ｃ０４Ｂ 35/16 Ｚ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI H05K 3/46 C04B 35/16 Z
Claims (6)
原子比による組成を Ｚｎ・ｘＳｉ と表した時、０．３≦ｘ≦６を満足する複合酸化物を８
５〜９９．９重量％と、Ｂ2 Ｏ3 を０．１〜１５重量％
とからなることを特徴とする低温焼成磁器組成物。1. A composite oxide containing at least Zn and Si, wherein the composition according to the atomic ratio of the metal is represented by Zn · xSi, satisfying 0.3 ≦ x ≦ 6.
5 to 99.9 wt% and, B 2 O 3 and 0.1 to 15 wt%
A low-temperature fired porcelain composition comprising:
原子比による組成を Ｚｎ・ｘＳｉ と表した時、０．３≦ｘ≦６を満足する複合酸化物を８
０〜９９．５重量％と、少なくともＳｉＯ2 およびＢ2
Ｏ3 を含有するガラス０．５〜２０重量％とからなるこ
とを特徴とする低温焼成磁器組成物。2. A composite oxide containing at least Zn and Si, and wherein the composition according to the atomic ratio of the metal is represented by Zn.xSi, 8 is a complex oxide satisfying 0.3 ≦ x ≦ 6.
0-99.5% by weight and at least SiO 2 and B 2
Low temperature sintering ceramic composition characterized by comprising a glass 0.5 to 20% by weight containing O 3.
イト結晶相および／またはＳｉＯ2 系結晶相を含むこと
を特徴とする請求項１または請求項２記載の低温焼成磁
器組成物。3. The low-temperature fired porcelain composition according to claim 1, which comprises a willemite crystal phase containing at least Zn and Si and / or a SiO 2 -based crystal phase.
以下、誘電損失が１５×１０-4以下であることを特徴と
する請求項１乃至３記載のいずれか記載の低温焼成磁器
組成物。4. The dielectric constant (εr) at 30 to 60 GHz is 6
The low-temperature fired porcelain composition according to any one of claims 1 to 3, wherein the dielectric loss is 15 10-4 or less.
原子比による組成を Ｚｎ・ｘＳｉ と表した時、０．３≦ｘ≦６を満足する複合酸化物を８
５〜９９．９重量％と、Ｂ2 Ｏ3 を０．１〜１５重量％
とからなる組成物を所定形状に成形後、酸化あるいは非
酸化性雰囲気中、８００℃〜１０００℃で焼成すること
を特徴とする低温焼成磁器の製造方法。5. A composite oxide containing at least Zn and Si, and wherein the composition according to the atomic ratio of the metal is represented by Zn.xSi, 8 is a complex oxide satisfying 0.3 ≦ x ≦ 6.
5 to 99.9 wt% and, B 2 O 3 and 0.1 to 15 wt%
A method for producing a low-temperature fired porcelain, comprising forming a composition comprising the following into a predetermined shape, and firing the composition at 800 ° C. to 1000 ° C. in an oxidizing or non-oxidizing atmosphere.
原子比による組成を Ｚｎ・ｘＳｉ と表した時、０．３≦ｘ≦６を満足する複合酸化物を８
０〜９９．５重量％と、少なくともＳｉＯ2 およびＢ2
Ｏ3 を含有するガラスを０．５〜２０重量％とからなる
組成物を所定形状に成形後、酸化あるいは非酸化性雰囲
気中、８００℃〜１０００℃で焼成することを特徴とす
る低温焼成磁器の製造方法。6. A composite oxide which contains at least Zn and Si, and which satisfies 0.3 ≦ x ≦ 6 when the composition according to the atomic ratio of the metal is represented by Zn · xSi.
0-99.5% by weight and at least SiO 2 and B 2
After molding the glass containing O 3 composition comprising 0.5 to 20% by weight into a predetermined shape in an oxidizing or non-oxidizing atmosphere, low-temperature firing porcelain and firing at 800 ° C. to 1000 ° C. Manufacturing method.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35007296A JP3527818B2 (en) | 1996-12-27 | 1996-12-27 | Low-temperature firing porcelain and method of manufacturing the same |
| US08/999,484 US5916834A (en) | 1996-12-27 | 1997-12-29 | Dielectric ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35007296A JP3527818B2 (en) | 1996-12-27 | 1996-12-27 | Low-temperature firing porcelain and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10189828A true JPH10189828A (en) | 1998-07-21 |
| JP3527818B2 JP3527818B2 (en) | 2004-05-17 |
Family
ID=18408045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35007296A Expired - Fee Related JP3527818B2 (en) | 1996-12-27 | 1996-12-27 | Low-temperature firing porcelain and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3527818B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998055425A1 (en) * | 1997-06-03 | 1998-12-10 | Tdk Corporation | Nonmagnetic ceramic and laminated ceramic parts |
| JP5134819B2 (en) * | 2004-10-12 | 2013-01-30 | 株式会社ヤスフクセラミックス | High frequency dielectric ceramics |
| CN110171962A (en) * | 2019-01-04 | 2019-08-27 | 南京汇聚新材料科技有限公司 | A kind of low-temperature co-fired ceramics microwave and millimeter wave material |
| EP3802446A4 (en) * | 2018-07-11 | 2022-03-23 | Ferro Corporation | High q ltcc dielectric compositions and devices |
-
1996
- 1996-12-27 JP JP35007296A patent/JP3527818B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998055425A1 (en) * | 1997-06-03 | 1998-12-10 | Tdk Corporation | Nonmagnetic ceramic and laminated ceramic parts |
| US6008151A (en) * | 1997-06-03 | 1999-12-28 | Tdk Corporation | Non-magnetic ceramics and ceramic multilayer parts |
| JP5134819B2 (en) * | 2004-10-12 | 2013-01-30 | 株式会社ヤスフクセラミックス | High frequency dielectric ceramics |
| EP3802446A4 (en) * | 2018-07-11 | 2022-03-23 | Ferro Corporation | High q ltcc dielectric compositions and devices |
| CN110171962A (en) * | 2019-01-04 | 2019-08-27 | 南京汇聚新材料科技有限公司 | A kind of low-temperature co-fired ceramics microwave and millimeter wave material |
| CN110171962B (en) * | 2019-01-04 | 2021-09-28 | 南京汇聚新材料科技有限公司 | Low-temperature co-fired ceramic microwave and millimeter wave material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3527818B2 (en) | 2004-05-17 |
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