JPH10173013A - Eb tester - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the temp. rise due to the power dissipation of a semiconductor device during operating by providing a semiconductor holding stage with a water cooling function and tilting function to forcibly circulate a coolant water in the stage. SOLUTION: A cooler having a water cooling and tilting stage is provided. It uses pure water as a coolant, and has a pump to circulate the pure water at a flow rate of 2-3m/sec to reduce the thermal resistance between the stage and wafer to 0.6c/W. The stage changes the tilt direction between the section machining of a lower layer wiring under observation and irradiation of an observing electron beam(EB), using a forced ion beam(FIB) device. Thus the lower layer wiring is easily measured. Thus it is possible to measure and analyze semiconductor devices of several tens watts or more, using an EB tester.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はＥＢテスタ装置に関
する。The present invention relates to an EB tester device.

【０００２】[0002]

【従来の技術】ＥＢテスタ装置の冷却方式で、空冷方式
であるため、数十Ｗ以上の消費電力の半導体装置の冷却
が出来ない。また、多層配線構造の半導体装置におい
て、上層配線が障害となって、下層配線に観測用の電子
線(ＥＢ)を照射できない。さらに、ＦＩＢ(Focused Ion
Beam)装置等で観測用の加工を行う場合も、半導体装置
表面に垂直な方向からでは、下層配線に到るまでの加工
が複雑で歩留が低い。この様なことから、多層配線構造
を持つ大電力半導体装置の測定が困難になりつつある。2. Description of the Related Art Since an EB tester is a cooling system of an air cooling type, it is impossible to cool a semiconductor device having a power consumption of several tens of watts or more. Further, in a semiconductor device having a multilayer wiring structure, an observing electron beam (EB) cannot be applied to the lower wiring because the upper wiring becomes an obstacle. Furthermore, FIB (Focused Ion
In the case of performing processing for observation with a Beam) device or the like, processing from the direction perpendicular to the surface of the semiconductor device to the lower wiring is complicated and the yield is low. For this reason, it is becoming difficult to measure a high-power semiconductor device having a multilayer wiring structure.

【０００３】[0003]

【発明が解決しようとする課題】本発明は、ＥＢテスタ
装置で、数十Ｗ以上の半導体を冷却する手段、及び、下
層配線の観測を容易にする手段を提供する。SUMMARY OF THE INVENTION The present invention provides a means for cooling a semiconductor of several tens of watts or more and a means for facilitating observation of a lower wiring in an EB tester device.

【０００４】[0004]

【課題を解決するための手段】[Means for Solving the Problems]

１）半導体保持ステージに水冷機能を備える。 1) The semiconductor holding stage has a water cooling function.

【０００５】２）チルト機能付きステージを備える。2) A stage with a tilt function is provided.

【０００６】本発明を用いると１）ステージ内に、強制
的に冷却水を循環させ、半導体装置の動作時の消費電力
による温度上昇を低減する。According to the present invention, 1) cooling water is forcibly circulated in a stage to reduce a rise in temperature due to power consumption during operation of a semiconductor device.

【０００７】２）ウエハを保持した状態でステージを任
意の角度に傾ける。2) The stage is tilted at an arbitrary angle while holding the wafer.

【０００８】３）傾けた状態で、ＦＩＢ装置の加工ビー
ムを照射し、所望の下層配線を断面方向から露出させ
る。[0008] 3) In a tilted state, a processing beam of the FIB device is irradiated to expose a desired lower layer wiring from a cross-sectional direction.

【０００９】４）所望の下層配線の断面に電位観測用の
電子線を照射し、測定する。4) A section of a desired lower wiring is irradiated with an electron beam for observing a potential and measured.

【００１０】[0010]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

冷却機能 １）図１に示すように、純水を冷却媒体として、純水を
循環させるポンプを備えた冷却装置を備える。Cooling function 1) As shown in FIG. 1, a cooling device provided with a pump for circulating pure water using pure water as a cooling medium is provided.

【００１１】２）２−３ｍ/secの流速でステージとウエ
ハ間の熱抵抗を０.６c/ｗと低くできる。2) The thermal resistance between the stage and the wafer can be reduced to 0.6 c / w at a flow rate of 2-3 m / sec.

【００１２】３）上記により、１００ｗの半導体装置で
も温度上昇を６０ｃにでき、室温２５ｃを考慮しても、
８５ｃとなり、半導体装置温度を実用範囲に冷却でき
る。3) With the above, the temperature rise can be increased to 60c even with a semiconductor device of 100 watts, and even if the room temperature 25c is considered
85c, and the semiconductor device temperature can be cooled to a practical range.

【００１３】チルト機能付ステージ １）図２に示すように、観測したい下層配線に対し、Ｆ
ＩＢ装置による断面加工と観測用電子線を照射する時と
で、ステージの傾き方向を変更する。Stage with tilt function 1) As shown in FIG. 2, a lower layer wiring to be observed is
The inclination direction of the stage is changed between the cross-section processing by the IB device and the irradiation of the observation electron beam.

【００１４】２）上記により、下層配線の測定を簡単に
行える。2) As described above, the measurement of the lower wiring can be easily performed.

【００１５】３）また、ＦＩＢ加工時のステージ角度を
うまく選べば、ウエハ表面に垂直な方向から加工するよ
り、加工量を低減でき、加工時間を短縮できる。3) If the stage angle at the time of FIB processing is properly selected, the processing amount can be reduced and the processing time can be reduced as compared with the case where processing is performed from a direction perpendicular to the wafer surface.

【００１６】角度固定ステージ １）図３に示すように、電子レンズを備えることによ
り、ＦＩＢビーム、電子線を任意の角度に照射できる。
これにより、チルト機能付きステージを備えたのと同様
の機能を実現できる。Angle fixed stage 1) As shown in FIG. 3, by providing an electron lens, an FIB beam and an electron beam can be irradiated at an arbitrary angle.
Thereby, the same function as having the stage with the tilt function can be realized.

【００１７】[0017]

【発明の効果】【The invention's effect】

１）数１０Ｗ以上の半導体装置に対し、ＥＢテスタを使
用した測定、解析を行える。1) For a semiconductor device of several tens of watts or more, measurement and analysis using an EB tester can be performed.

【００１８】２）下層の信号配線の電位を断面方向から
ＥＢテスタで測定できる。2) The potential of the signal wiring in the lower layer can be measured from the cross-sectional direction by an EB tester.

【図面の簡単な説明】[Brief description of the drawings]

【図１】水冷機能付きステージの実施例の説明図。FIG. 1 is an explanatory view of an embodiment of a stage with a water cooling function.

【図２】チルト機能付きステージの実施例の説明図。FIG. 2 is an explanatory diagram of an embodiment of a stage with a tilt function.

【図３】電子レンズを備えた時の実施例の説明図。FIG. 3 is an explanatory view of an embodiment provided with an electronic lens.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】水冷、チルトステージ機能を備えたことを
特徴とするＥＢテスタ。1. An EB tester having a water cooling and tilt stage function.