JPH10167890A - Divided heat insulating cylinder for apparatus for pulling up silicon single crystal - Google Patents
Divided heat insulating cylinder for apparatus for pulling up silicon single crystalInfo
- Publication number
- JPH10167890A JPH10167890A JP35329596A JP35329596A JPH10167890A JP H10167890 A JPH10167890 A JP H10167890A JP 35329596 A JP35329596 A JP 35329596A JP 35329596 A JP35329596 A JP 35329596A JP H10167890 A JPH10167890 A JP H10167890A
- Authority
- JP
- Japan
- Prior art keywords
- heat insulating
- insulating cylinder
- single crystal
- inner peripheral
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【技術分野】本発明はシリコン単結晶引上げ装置にかか
わり、特にその部品である保温筒に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon single crystal pulling apparatus, and more particularly to a heat retaining cylinder as a component thereof.
【０００２】[0002]
【従来の技術】半導体デバイスの基盤として用いられる
シリコンウエハーはシリコン単結晶から切出し加工によ
り製造される。シリコン単結晶引き上げ装置は、主にチ
ョクラルスキー法（ＣＺ法）が用いられている。このＣ
Ｚ法は原理的には、チャンバー内にルツボを回転自在に
支持し、このルツボ内でシリコン原料を溶融し、シリコ
ン融液に上方から回転自在に吊り下げされた種結晶を浸
してこれを引き上げることにより、シリコン単結晶イン
ゴットを引き上げるものである。2. Description of the Related Art A silicon wafer used as a base of a semiconductor device is manufactured by cutting a silicon single crystal. The silicon single crystal pulling apparatus mainly uses the Czochralski method (CZ method). This C
In principle, the Z method rotatably supports a crucible in a chamber, melts a silicon raw material in the crucible, immerses a seed crystal suspended rotatably from above in a silicon melt, and pulls it up. Thereby, the silicon single crystal ingot is pulled up.
【０００３】この際、ルツボ内のシリコン原料はルツボ
の保護体の外周に設けられた円筒状のカーボンヒーター
によって加熱され、カーボンヒーター外周に設けられた
保温筒によって保温された状態で溶融される。[0003] At this time, the silicon raw material in the crucible is heated by a cylindrical carbon heater provided on the outer periphery of the crucible protection body, and is melted while being kept warm by a heat retaining cylinder provided on the outer periphery of the carbon heater.
【０００４】この保温筒の内周材料として、従来より黒
鉛材が炭素繊維断熱材のインナーシールドとして用いら
れ、最近は炭素繊維強化炭素（以下Ｃ／Ｃ）も利用され
てきている。As an inner peripheral material of the heat insulating cylinder, a graphite material has conventionally been used as an inner shield of a carbon fiber heat insulating material, and recently carbon fiber reinforced carbon (C / C) has also been used.
【０００５】しかしながら，このＣ／Ｃ製保温筒はシリ
コン単結晶引上げ装置内において、温度とガス流の影響
により、局部的にＳｉＣ化消耗、Ｓｉ蒸着による消耗な
どの化学消耗が発生しやすい。[0005] However, in the C / C heat insulating cylinder, in the silicon single crystal pulling apparatus, due to the influence of the temperature and the gas flow, chemical consumption such as consumption due to SiC formation and consumption due to Si deposition is easily generated.
【０００６】この時、Ｃ／Ｃ製保温筒は局部的な消耗で
あつてもその機能が維持できなくなりライフエンドとな
る。Ｃ／Ｃ材は高温、高強度のすぐれた材料だが、高価
なため、局部的な消耗により取り換えることは、コスト
高となる。At this time, the function of the C / C heat insulation cylinder cannot be maintained even if it is locally consumed, and the life end is reached. Although the C / C material is a high-temperature, high-strength material, it is expensive, and replacement by local wear increases the cost.
【０００７】例えば特開昭６３−１６６７９５号にはヒ
ーター外周にカーボン繊維を円筒状にワインディングし
たカーボン複合材からなる保温筒を複数設置したシリコ
ン単結晶引上げ装置が開示されている。[0007] For example, Japanese Patent Application Laid-Open No. 63-166795 discloses a silicon single crystal pulling apparatus in which a plurality of heat retaining cylinders made of a carbon composite material in which carbon fibers are wound in a cylindrical shape around a heater are installed.
【０００８】この装置においては、保温筒を複数層設
け、ヒーターに近い消耗した保温筒のみを交換すること
が記載されている。しかし保温筒の局部的な消耗の現象
は高さ方向にて分布がみられるので、上記のような交換
方法はなおコスト低減の課題を有する。In this apparatus, it is described that a plurality of heat insulation cylinders are provided, and only the exhausted heat insulation cylinder close to the heater is replaced. However, since the phenomenon of local wear of the heat retaining cylinder is distributed in the height direction, the above replacement method still has a problem of cost reduction.
【０００９】[0009]
【発明の課題】以上のような問題点に鑑み、本発明者ら
は、シリコン単結晶引上げ装置において、Ｃ／Ｃ製保温
筒を得率よく、より低コスト化できるよう構成した装置
を提供する。DISCLOSURE OF THE INVENTION In view of the above problems, the present inventors provide an apparatus for pulling a C / C insulated cylinder with high efficiency and reduced cost in a silicon single crystal pulling apparatus. .
【００１０】[0010]
【課題解決の手段】上記の課題を解決するため本発明者
が提供するのは、ＣＺ法によるシリコン単結晶を引き上
げる装置において、ヒーター外周に設けられる保温筒の
内周材を上下方向に複数個に分割した炭素繊維強化炭素
材で構成し、消耗箇所の内周部を部分的に交換できるよ
うに構成したことを特徴とするシリコン単結晶引き上げ
装置の分割した保温筒である。In order to solve the above problems, the present inventors provide an apparatus for pulling a silicon single crystal by the CZ method, wherein a plurality of inner peripheral members of a heat retaining cylinder provided on the outer periphery of a heater are provided in a vertical direction. A divided heat retaining cylinder of a silicon single crystal pulling apparatus, comprising a carbon fiber reinforced carbon material divided so as to partially replace an inner peripheral portion of a consumable portion.
【００１１】以下に本発明を詳細に説明する。本発明の
シリコン単結晶引上げ装置は、チャンバー内にルツボを
回転自在に支持して該ルツボ内にシリコン原料を装填
し、該ルツボ外周に設けられたヒーターにより加熱し、
該ヒーター外周に設けられた保温筒で保温しながら上記
ルツボ内のシリコン原料を溶融し、シリコン融液に上方
から回転自在に吊り下げされた種結晶を浸して、これを
引き上げることによりシリコン単結晶を引き上げる。Hereinafter, the present invention will be described in detail. The silicon single crystal pulling apparatus of the present invention, rotatably supporting a crucible in a chamber, loading a silicon raw material in the crucible, heating by a heater provided on the outer periphery of the crucible,
The silicon raw material in the crucible is melted while keeping the temperature in a heat retaining tube provided on the outer periphery of the heater, and a seed crystal suspended rotatably from above is immersed in a silicon melt, and the silicon single crystal is pulled up. Pull up.
【００１２】上記のヒーターの外周に設けられた保温筒
について、外周部の断熱材は通常、炭素繊維断熱材で構
成されるが、本発明では、特に内周部を上下方向に複数
個に分割したＣ／Ｃ材を挿入した構成を特徴とする。[0012] Regarding the heat insulating cylinder provided on the outer periphery of the heater, the heat insulating material on the outer peripheral portion is usually made of carbon fiber heat insulating material. In the present invention, the inner peripheral portion is particularly divided into a plurality of pieces in the vertical direction. It is characterized by a configuration in which a C / C material is inserted.
【００１３】本発明においては、シリコン単結晶引上装
置内において、温度とガス流の影響により、局部的にＳ
ｉＣ化消耗、あるいはＳｉ蒸着等の化学消耗が発生する
現象につき、特に保温筒の高さ方向に分布が見られるこ
とに着眼した。According to the present invention, in a silicon single crystal pulling apparatus, S is locally affected by temperature and gas flow.
Regarding phenomena in which chemical consumption such as iC consumption or Si deposition occurs, the present inventors have paid particular attention to the fact that distribution is observed in the height direction of the heat retaining cylinder.
【００１４】そこで、消耗の発生の程度に応じて、上下
方向で消耗の著しい部位のみ取り換え可能に構成した。In view of the above, according to the degree of occurrence of wear, only a portion which is significantly worn in the vertical direction can be replaced.
【００１５】本発明のＣ／Ｃ製保温筒内周部は上下方向
に２分割〜４分割に構成することが適当である。It is appropriate that the inner peripheral portion of the C / C heat insulating cylinder of the present invention is vertically divided into two to four parts.
【００１６】分割面の構造はＣ／Ｃ材の肉厚等により適
宜選択可能にしておく。肉厚が厚い場合は、インロー継
ぎによる構造が好ましく、肉厚が薄い場合は、分割部に
黒鉛材またはＣ／Ｃ材のリングを挿入し、リングを介し
て積み上げることが適当である。The structure of the division surface can be appropriately selected depending on the thickness of the C / C material and the like. When the wall thickness is large, the structure by the spigot joint is preferable. When the wall thickness is thin, it is appropriate to insert a graphite material or a C / C material ring into the divided portion and to pile up via the ring.
【００１７】[0017]
【発明の効果】本発明によると、シリコン単結晶引上げ
用装置においてＣ／Ｃ製保温筒の内周部を化学消耗の発
生に応じて局部的に交換できる。従って製造得率が良く
低コスト化につながる。製品の原単位で削減効果をみる
と、ｎ分割品の場合、原単位（Ｃ／Ｃ製保温筒価格／シ
リコン単位重量）が（１−１／ｎ）×１００％）削減可
能となる。According to the present invention, in the apparatus for pulling a silicon single crystal, the inner peripheral portion of a C / C heat insulating cylinder can be locally replaced according to occurrence of chemical consumption. Therefore, the production yield is good, which leads to cost reduction. Looking at the reduction effect in terms of the basic unit of the product, in the case of the n-divided product, it is possible to reduce the basic unit (C / C insulated cylinder price / silicon unit weight) by (1-1 / n) × 100%.
【図１】 本発明の３分割のＣ／Ｃ製保温筒の一実施態
様である。FIG. 1 is an embodiment of a three-part C / C heat insulation cylinder of the present invention.
【図２】 本発明の４分割のＣ／Ｃ製保温筒の一実施態
様である。FIG. 2 is an embodiment of a four-part C / C heat insulation cylinder of the present invention.
【図３】 本発明の２分割の薄肉Ｃ／Ｃ製保温筒の一実
施態様である。FIG. 3 is an embodiment of a two-part, thin C / C heat insulation cylinder of the present invention.
【符号の説明】 繊維断熱材 Ｃ／Ｃ製保温筒内周部[Explanation of Signs] Fiber insulation material C / C inner circumference of heat insulation cylinder
Claims (1)
装置において、ヒーター外周に設けられる保温筒の内周
材を上下方向に複数個に分割した炭素繊維強化炭素材で
構成し、消耗箇所の内周部を部分的に交換できるように
構成したことを特徴とするシリコン単結晶引上げ装置の
分割した保温筒。In an apparatus for pulling a silicon single crystal by the CZ method, an inner peripheral material of a heat retaining cylinder provided on an outer periphery of a heater is constituted of a carbon fiber reinforced carbon material divided into a plurality of pieces in a vertical direction, and an inner peripheral material of a consumable portion is provided. A divided heat retaining cylinder of a silicon single crystal pulling apparatus characterized in that a part thereof can be partially replaced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08353295A JP3101219B2 (en) | 1996-12-17 | 1996-12-17 | Insulated cylinder of silicon single crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08353295A JP3101219B2 (en) | 1996-12-17 | 1996-12-17 | Insulated cylinder of silicon single crystal pulling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10167890A true JPH10167890A (en) | 1998-06-23 |
| JP3101219B2 JP3101219B2 (en) | 2000-10-23 |
Family
ID=18429877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08353295A Expired - Fee Related JP3101219B2 (en) | 1996-12-17 | 1996-12-17 | Insulated cylinder of silicon single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3101219B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002036861A1 (en) * | 2000-10-31 | 2002-05-10 | Shin-Etsu Handotai Co., Ltd. | Silicon semiconductor single crystal manufacturing apparatus and manufacturing method |
| KR20030037054A (en) * | 2001-11-02 | 2003-05-12 | 주식회사 실트론 | Single crystalline silicon ingot grower |
| CN109306512A (en) * | 2018-11-27 | 2019-02-05 | 上海骐杰碳素材料有限公司 | A kind of solidification heat-preservation cylinder |
-
1996
- 1996-12-17 JP JP08353295A patent/JP3101219B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002036861A1 (en) * | 2000-10-31 | 2002-05-10 | Shin-Etsu Handotai Co., Ltd. | Silicon semiconductor single crystal manufacturing apparatus and manufacturing method |
| US6764548B2 (en) | 2000-10-31 | 2004-07-20 | Shin-Etsu Handotai Co., Ltd. | Apparatus and method for producing silicon semiconductor single crystal |
| KR20030037054A (en) * | 2001-11-02 | 2003-05-12 | 주식회사 실트론 | Single crystalline silicon ingot grower |
| CN109306512A (en) * | 2018-11-27 | 2019-02-05 | 上海骐杰碳素材料有限公司 | A kind of solidification heat-preservation cylinder |
| CN109306512B (en) * | 2018-11-27 | 2024-03-15 | 上海骐杰碳素材料有限公司 | Solidifying heat-preserving cylinder |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3101219B2 (en) | 2000-10-23 |
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