JPH10160597A - Temperature detecting device, and its calibrating device - Google Patents
Temperature detecting device, and its calibrating deviceInfo
- Publication number
- JPH10160597A JPH10160597A JP8317340A JP31734096A JPH10160597A JP H10160597 A JPH10160597 A JP H10160597A JP 8317340 A JP8317340 A JP 8317340A JP 31734096 A JP31734096 A JP 31734096A JP H10160597 A JPH10160597 A JP H10160597A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- heat medium
- calibration value
- thermocouple
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ等の
ように、加熱する必要があり、かつその加熱温度を正確
に管理する必要があるものの、加熱時の温度を正確に測
定するために用いる温度検出装置及びその校正装置に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used for accurately measuring the temperature at the time of heating, such as a semiconductor wafer, which needs to be heated and its heating temperature needs to be accurately controlled. The present invention relates to a temperature detection device and a calibration device thereof.
【０００２】[0002]
【従来の技術】半導体ウエハを加熱炉に入れて加熱する
際に、半導体ウエハの表面の温度分布を極力均一にする
ために、炉内での半導体ウエハの温度分布を測定する必
要がある。このために用いられるのがウエハセンサであ
る。このウエハセンサは、半導体ウエハの表面に複数の
熱電対を埋設して構成され、炉内で加熱されているとき
の各埋設部分での温度をそれぞれ測定して、ウエハ全体
の温度分布を測定する。2. Description of the Related Art When a semiconductor wafer is placed in a heating furnace and heated, it is necessary to measure the temperature distribution of the semiconductor wafer in the furnace in order to make the temperature distribution on the surface of the semiconductor wafer as uniform as possible. A wafer sensor is used for this purpose. This wafer sensor is configured by burying a plurality of thermocouples on the surface of a semiconductor wafer, and measures the temperature at each buried portion when heated in a furnace to measure the temperature distribution of the entire wafer.
【０００３】[0003]
【発明が解決しようとする課題】ところで、前記ウエハ
センサの場合、半導体ウエハの表面に埋設される複数の
熱電対は、それぞれ個体差を有するため、その特性には
微妙な差がある。このため、ウエハセンサの温度分布を
正確に測定するには、各熱電対の誤差を正確に把握して
おく必要がある。In the case of the wafer sensor, since a plurality of thermocouples embedded in the surface of the semiconductor wafer have individual differences, there is a slight difference in characteristics. Therefore, in order to accurately measure the temperature distribution of the wafer sensor, it is necessary to accurately grasp the error of each thermocouple.
【０００４】各熱電対の誤差を測定するために、基準温
度に保たれた熱媒体内に各熱電対を浸漬し、それらの誤
差を測定する。この熱媒体としてはシリコンオイルやソ
ルトバスが使用されている。In order to measure the error of each thermocouple, each thermocouple is immersed in a heat medium maintained at a reference temperature, and the errors are measured. Silicone oil or salt bath is used as the heat medium.
【０００５】ところが、熱媒体は、それに浸漬した後の
熱電対の表面に付着する。この付着した熱媒体としての
シリコンオイルやソルトバスは、後処理として熱電対か
ら除去しなければならないが、このシリコンオイル等の
除去は、容易ではなかった。[0005] However, the heat medium adheres to the surface of the thermocouple after being immersed in the heat medium. The silicon oil and the salt bath as the attached heat medium must be removed from the thermocouple as a post-treatment, but the removal of the silicon oil and the like was not easy.
【０００６】また、各熱電対の誤差を測定しても、それ
が半導体ウエハに埋設されると、その時点で誤差値が変
動する可能性がある。Further, even if the error of each thermocouple is measured, if the error is embedded in a semiconductor wafer, the error value may fluctuate at that time.
【０００７】本発明は、以上の点を考慮してなされたも
のであり、各熱電対の誤差測定時に付着する熱媒体を容
易に除去できると共に、正確な温度分布を測定できる温
度検出装置及びその校正装置を提供することを目的とす
るものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and a temperature detecting device capable of easily removing a heat medium adhered at the time of measuring an error of each thermocouple and measuring an accurate temperature distribution. It is an object to provide a calibration device.
【０００８】[0008]
【課題を解決するための手段】かかる課題を解決するた
め、第１の発明に係る温度検出装置は、一定の面積また
は体積を有し、その表面または内部に分布した温度を測
定対象とする測定体と、この測定体に複数設けられ各部
での温度分布を測定する複数の熱電対と、各熱電対での
測定誤差を校正する校正値を記録した記録手段とを有し
て構成されたことを特徴とする。In order to solve this problem, a temperature detecting device according to a first aspect of the present invention has a fixed area or volume, and measures a temperature distributed on the surface or inside thereof. Body, a plurality of thermocouples provided on the measurement body for measuring the temperature distribution in each part, and a recording means for recording a calibration value for calibrating a measurement error in each thermocouple. It is characterized by.
【０００９】前記構成により、記録手段に記録された校
正値によって、各熱電対の測定誤差を校正して測定す
る。これにより、測定体の各部での温度分布を正確に測
定することができる。With the above configuration, the measurement error of each thermocouple is calibrated and measured by the calibration value recorded in the recording means. Thereby, the temperature distribution in each part of the measurement object can be accurately measured.
【００１０】第２の発明に係る温度検出装置は、前記測
定体が半導体ウエハによって構成されたことを特徴とす
る。[0010] A temperature detecting device according to a second aspect of the present invention is characterized in that the measuring object is constituted by a semiconductor wafer.
【００１１】前記構成により、半導体ウエハを加熱炉で
加熱する際に、その半導体ウエハの表面での温度分布を
正確に測定することができる。According to the above configuration, when the semiconductor wafer is heated in the heating furnace, the temperature distribution on the surface of the semiconductor wafer can be accurately measured.
【００１２】第３の発明に係る校正装置は、基準温度雰
囲気を作るフッ素系熱媒体と、このフッ素系熱媒体を蓄
えた液槽と、この液槽内のフッ素系熱媒体を基準温度に
調整して維持する温度調整手段と、前記液槽内のフッ素
系熱媒体の正確な温度を測定する測温手段と、前記液槽
内に浸漬された請求項１または２に記載の温度検出装置
の各熱電対からの測定値及び前記測温手段からの測定値
によって各熱電対の校正値を算出する校正値算出手段と
を有して構成されたことを特徴とする。According to a third aspect of the present invention, there is provided a calibration apparatus comprising: a fluorine-based heat medium for forming a reference temperature atmosphere; a liquid tank storing the fluorine-based heat medium; and a fluorine-based heat medium in the liquid tank adjusted to a reference temperature. The temperature detecting device according to claim 1, wherein the temperature detecting device is immersed in the liquid tank. 4. And a calibration value calculation unit configured to calculate a calibration value of each thermocouple based on a measurement value from each thermocouple and a measurement value from the temperature measurement unit.
【００１３】前記構成により、温度調整手段で液槽内の
フッ素系熱媒体が基準温度に維持され、測温手段で液槽
内のフッ素系熱媒体の温度が正確に測定される。そし
て、校正値算出手段で、温度検出装置の各熱電対からの
測定値と、測温手段からの測定値とが取り込まれ、各熱
電対の校正値が算出される。このとき、温度検出装置が
浸漬される熱媒体としてフッ素系熱媒体を用いること
で、浸漬時に熱媒体が測定体の表面に残留することがな
くなる。即ち、フッ素系熱媒体の場合、測定体の表面に
付着しても、容易に除去できるため、測定体の表面に残
留することはない。これにより、その後の測定時に悪影
響を及ぼすことがなくなり、温度分布を正確に測定する
ことができる。[0013] According to the above configuration, the temperature of the fluorine-based heat medium in the liquid tank is maintained at the reference temperature by the temperature adjusting means, and the temperature of the fluorine-based heat medium in the liquid tank is accurately measured by the temperature measurement means. Then, the calibration value calculation means fetches the measurement value from each thermocouple of the temperature detection device and the measurement value from the temperature measurement means, and calculates the calibration value of each thermocouple. At this time, by using a fluorine-based heat medium as the heat medium in which the temperature detection device is immersed, the heat medium does not remain on the surface of the measurement object during the immersion. That is, in the case of the fluorine-based heat medium, even if it adheres to the surface of the measurement object, it can be easily removed and does not remain on the surface of the measurement object. Thereby, adverse effects are not caused at the time of subsequent measurement, and the temperature distribution can be accurately measured.
【００１４】[0014]
【発明の実施の形態】以下、本発明に係る温度検出装置
及びその校正装置を添付図面に基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a temperature detecting device and a calibrating device thereof according to the present invention will be described with reference to the accompanying drawings.
【００１５】［構成］本実施形態に係る温度検出装置
は、温度測定を行うウエハセンサと、このウエハセンサ
の測定誤差を校正する校正値を記録した記録手段とから
構成されている。[Structure] The temperature detecting device according to the present embodiment includes a wafer sensor for measuring a temperature and recording means for recording a calibration value for calibrating a measurement error of the wafer sensor.
【００１６】ウエハセンサ１は、図２に示すように、表
面や内部の温度分布を測定対象とする測定体である半導
体ウエハ２と、この半導体ウエハ２の表面に複数個埋設
されて各部での温度を測定する複数の熱電対３とから構
成されている。各熱電対３は、半導体ウエハ２に埋設さ
れる測温接点３Ａと、計測装置（図示せず）側に位置す
る基準接点（図示せず）と、これを接続する素線３Ｂと
から構成されている。各素線３Ｂには、半導体ウエハ２
の埋設位置との整合性をとるために、それぞれ番号３Ｃ
が付されている。As shown in FIG. 2, the wafer sensor 1 has a semiconductor wafer 2 as a measuring object whose surface or internal temperature distribution is to be measured, and a plurality of wafer sensors 1 embedded in the surface of the semiconductor wafer 2 and having a temperature at each part. And a plurality of thermocouples 3 for measuring. Each thermocouple 3 is composed of a temperature measuring contact 3A buried in the semiconductor wafer 2, a reference contact (not shown) located on the measuring device (not shown) side, and a wire 3B connecting the same. ing. Each element wire 3B has a semiconductor wafer 2
No. 3C for consistency with the buried position
Is attached.
【００１７】このウエハセンサ１は前記計測装置に接続
されている。この計測装置は、各熱電対３からの電気信
号によって温度を算出するもので、各熱電対３の測温接
点３Ａの埋設位置の温度を算出して半導体ウエハ２全体
の温度分布を算出する。The wafer sensor 1 is connected to the measuring device. This measuring device calculates the temperature based on the electric signal from each thermocouple 3, and calculates the temperature of the embedded position of the temperature measuring contact 3 A of each thermocouple 3 to calculate the temperature distribution of the entire semiconductor wafer 2.
【００１８】記録手段（図示せず）は、後述する校正装
置５で検出した校正値を記録する手段である。この記録
手段に記録された校正値は、前記計測装置に取り込ま
れ、各測温接点３Ａでの検出値の校正に用いられる。こ
の記録手段は具体的には、磁気記録媒体で構成して、前
記計測装置に直接入力されるようにしたり、記録紙その
他の表示手段で構成して、前記計測装置に個別に入力す
るようにしたりする。The recording means (not shown) is a means for recording a calibration value detected by a calibration device 5 described later. The calibration value recorded in the recording means is taken into the measuring device and used for calibrating the detection value at each temperature measuring contact 3A. Specifically, this recording means is constituted by a magnetic recording medium and is directly input to the measuring device, or is constituted by recording paper or other display means and is individually input to the measuring device. Or
【００１９】図１は本実施形態に係る校正装置５を示す
構成図である。この校正装置５は、前記半導体ウエハ２
に埋設された熱電対３の誤差を測定して校正値を算出す
る装置である。具体的には、以下のように構成されてい
る。FIG. 1 is a configuration diagram showing a calibration device 5 according to this embodiment. The calibration device 5 is provided with the semiconductor wafer 2
Is a device for measuring an error of the thermocouple 3 embedded in the device and calculating a calibration value. Specifically, it is configured as follows.
【００２０】図１中の７はフッ素系熱媒体である。この
フッ素系熱媒体７は、浸漬された前記半導体ウエハ２を
基準温度に加熱する。このフッ素系熱媒体７としては具
体的には、フロリナート（住友スリーエム（株）の商品
名）やガルデン（アウジモント（株）の商品名）等が用
いられる。このフッ素系熱媒体７は液槽８に蓄えられて
いる。Reference numeral 7 in FIG. 1 denotes a fluorine-based heat medium. The fluorine-based heat medium 7 heats the immersed semiconductor wafer 2 to a reference temperature. Specific examples of the fluorine-based heat medium 7 include Fluorinert (trade name of Sumitomo 3M Limited), Galden (trade name of Ausimont Ltd.), and the like. The fluorine-based heat medium 7 is stored in a liquid tank 8.
【００２１】さらに液槽８には、温度調整手段９と測温
手段１０と校正値算出手段１１とが接続されている。温
度調整手段９は、液槽８内のフッ素系熱媒体７に浸漬さ
れた温度センサ１５と、フッ素系熱媒体７に浸漬されて
このフッ素系熱媒体７を加熱するヒーター１６と、温度
センサ１５の検出値に従ってヒーター１６に流す電流を
制御してフッ素系熱媒体７の温度を基準温度に調整する
温調器１７とから構成されている。測温手段１０は、液
槽８のフッ素系熱媒体７内に挿入された基準温度計１８
によって構成されている。校正値算出手段１１は、誤差
計算を行うコンピュータを含んで構成され、これに接続
されたウエハセンサ１の各熱電対３からの検出値と基準
温度計１８からの検出値とを比較して校正値を算出する
ようになっている。さらに、校正値算出手段１１は、算
出した校正値を記録する磁気記録手段や紙に打ち出す出
力手段等を有し、この紙等で得た校正値をウエハセンサ
１に付加し、これらを一体として取り扱うことができる
ようにしている。Further, the liquid tank 8 is connected to a temperature adjusting means 9, a temperature measuring means 10, and a calibration value calculating means 11. The temperature adjusting means 9 includes a temperature sensor 15 immersed in the fluorinated heat medium 7 in the liquid tank 8, a heater 16 immersed in the fluorinated heat medium 7 to heat the fluorinated heat medium 7, and a temperature sensor 15 And a temperature controller 17 for controlling the current flowing through the heater 16 in accordance with the detected value to adjust the temperature of the fluorine-based heat medium 7 to a reference temperature. The temperature measuring means 10 includes a reference thermometer 18 inserted in the fluorine-based heat medium 7 of the liquid tank 8.
It is constituted by. The calibration value calculation means 11 includes a computer for calculating an error, and compares a detection value from each thermocouple 3 of the wafer sensor 1 connected thereto with a detection value from the reference thermometer 18 to calculate a calibration value. Is calculated. Further, the calibration value calculation means 11 has a magnetic recording means for recording the calculated calibration values, an output means for printing on paper, and the like, and adds the calibration values obtained from the paper or the like to the wafer sensor 1 and treats them integrally. Have to be able to.
【００２２】［動作］前記構成の校正装置５では、次の
ようにして各ウエハセンサ１の校正値が算出される。[Operation] In the calibration device 5 having the above-described configuration, the calibration value of each wafer sensor 1 is calculated as follows.
【００２３】液槽８内のフッ素系熱媒体７は温度調整手
段９で基準温度に調整されている。具体的には、温度セ
ンサ１５でフッ素系熱媒体７の温度が測定され、この測
定温度に従って温調器１７でヒーター１６に流す電流が
制御されて、フッ素系熱媒体７の温度が基準温度に調整
され、維持されている。この状態で、ウエハセンサ１が
液槽８のフッ素系熱媒体７に浸漬される。The temperature of the fluorine-based heat medium 7 in the liquid tank 8 is adjusted to a reference temperature by a temperature adjusting means 9. Specifically, the temperature of the fluorine-based heat medium 7 is measured by the temperature sensor 15, and the current flowing through the heater 16 is controlled by the temperature controller 17 in accordance with the measured temperature, so that the temperature of the fluorine-based heat medium 7 becomes the reference temperature. Coordinated and maintained. In this state, the wafer sensor 1 is immersed in the fluorine-based heat medium 7 in the liquid tank 8.
【００２４】基準温度計１８では、フッ素系熱媒体７の
正確な温度が検出されて校正値算出手段１１に取り込ま
れる。さらに、フッ素系熱媒体７内に浸漬されたウエハ
センサ１の各熱電対３からの検出値も校正値算出手段１
１に取り込まれ、基準温度計１８での検出値と比較さ
れ、各熱電対３の校正値が算出される。算出された校正
値は、記録手段に記録される。The reference thermometer 18 detects an accurate temperature of the fluorine-based heat medium 7 and takes it into the calibration value calculation means 11. Further, the detection value from each thermocouple 3 of the wafer sensor 1 immersed in the fluorine-based heat medium 7 is also used as the calibration value calculation means 1.
1 and is compared with the value detected by the reference thermometer 18 to calculate the calibration value of each thermocouple 3. The calculated calibration value is recorded in the recording means.
【００２５】その後、ウエハセンサ１はフッ素系熱媒体
７内から取り出され、ウエハセンサ１の表面に付着した
フッ素系熱媒体７の除去処理が施される。フッ素系熱媒
体７が除去された後のウエハセンサ１は、加熱炉での温
度分布の測定に用いられる。そして、前記記録手段に記
録された校正値は、ウエハセンサ１で実際に温度分布を
測定する際の測定値の校正に用いられ、正確な温度測定
に寄与される。Thereafter, the wafer sensor 1 is taken out of the fluorine-based heat medium 7 and subjected to a process of removing the fluorine-based heat medium 7 attached to the surface of the wafer sensor 1. The wafer sensor 1 from which the fluorine-based heat medium 7 has been removed is used for measuring a temperature distribution in a heating furnace. The calibration value recorded in the recording means is used for calibrating the measured value when the temperature distribution is actually measured by the wafer sensor 1, and contributes to accurate temperature measurement.
【００２６】このとき、ウエハセンサ１が浸漬されるフ
ッ素系熱媒体７は、ウエハセンサ１の表面に付着しても
容易に除去できるので、ウエハセンサ１の表面に残るこ
とはない。これにより、その後の測定時に悪影響を及ぼ
すことがなくなる。At this time, since the fluorine-based heat medium 7 into which the wafer sensor 1 is immersed can be easily removed even if it adheres to the surface of the wafer sensor 1, it does not remain on the surface of the wafer sensor 1. This eliminates any adverse effects during subsequent measurements.
【００２７】［効果］以上のように、液槽８内の熱媒体
としてフッ素系熱媒体７を用いたので、各熱電対３の校
正値算出時にウエハセンサ１の表面に熱媒体が残留する
ことがなくなり、その後の温度分布の測定に悪影響を及
ぼすのを確実に防止することができる。[Effect] As described above, since the fluorine-based heat medium 7 is used as the heat medium in the liquid tank 8, the heat medium may remain on the surface of the wafer sensor 1 when the calibration value of each thermocouple 3 is calculated. The temperature distribution can be reliably prevented from being adversely affected.
【００２８】さらに、ウエハセンサ１に、前記校正値を
記録した記録手段を付加して取り扱うようにしたので、
校正値を用いた正確な温度分布測定が可能になる。Further, a recording means for recording the calibration values is added to the wafer sensor 1 for handling.
Accurate temperature distribution measurement using the calibration values becomes possible.
【００２９】［変形例］前記実施形態では、温度分布を
測定対象とする測定体として半導体ウエハ２を用いた
が、本発明はこれに限らず、表面や内部の温度分布を測
定する必要があるものであれば本発明を適用することが
でき、それにより、前記同様の作用、効果を奏すること
ができる。[Modification] In the above-described embodiment, the semiconductor wafer 2 is used as a measuring object whose temperature distribution is to be measured. However, the present invention is not limited to this, and it is necessary to measure the surface and internal temperature distribution. The present invention can be applied to any device that has the same function and effect as described above.
【００３０】[0030]
【発明の効果】以上、詳述したように、本発明によれば
次のような効果を奏することができる。As described above, according to the present invention, the following effects can be obtained.
【００３１】（１） 校正値が記録された記録手段を付
加して温度検出装置を構成したので、温度検出装置で温
度分布を測定する際に前記校正値を用いることができる
ようになり、正確な温度分布測定が可能になる。(1) Since the temperature detecting device is constituted by adding a recording means on which the calibration value is recorded, the calibration value can be used when measuring the temperature distribution with the temperature detecting device, and the accuracy can be improved. Temperature measurement.
【００３２】（２） 基準温度雰囲気を作る熱媒体とし
て、フッ素系熱媒体を用いたので、校正値算出時に温度
検出装置の表面に前記熱媒体が付着しても容易に除去す
ることができて残留することがなくなり、その後の温度
分布の測定に悪影響を及ぼすのを確実に防止することが
できる。(2) Since a fluorine-based heat medium is used as the heat medium for creating the reference temperature atmosphere, even if the heat medium adheres to the surface of the temperature detection device when calculating the calibration value, it can be easily removed. It does not remain, and it is possible to reliably prevent the subsequent measurement of the temperature distribution from being adversely affected.
【図１】本発明に係る校正装置を示す構成図である。FIG. 1 is a configuration diagram showing a calibration device according to the present invention.
【図２】本発明に係る温度検出装置であるウエハセンサ
を示す平面図である。FIG. 2 is a plan view showing a wafer sensor which is a temperature detecting device according to the present invention.
１：ウエハセンサ、２：半導体ウエハ、３：熱電対、
５：校正装置、７：フッ素系熱媒体、８：液槽、９：温
度調整手段、１０：測温手段、１１：校正値算出手段、
１５：温度センサ、１６：ヒーター、１７：温調器、１
８：基準温度計。1: wafer sensor, 2: semiconductor wafer, 3: thermocouple,
5: calibration device, 7: fluorine-based heat medium, 8: liquid tank, 9: temperature adjustment means, 10: temperature measurement means, 11: calibration value calculation means,
15: temperature sensor, 16: heater, 17: temperature controller, 1
8: Reference thermometer.
Claims (3)
または内部に分布した温度を測定対象とする測定体と、 この測定体に複数設けられて各部での温度を測定する複
数の熱電対と、 各熱電対での測定誤差を校正する校正値を記録した記録
手段とを有して構成されたことを特徴とする温度検出装
置。1. A measuring object having a certain area or volume and measuring a temperature distributed on the surface or inside thereof, and a plurality of thermocouples provided on the measuring object and measuring a temperature at each part. And a recording means for recording a calibration value for calibrating a measurement error in each thermocouple.
て、 前記測定体が、半導体ウエハによって構成されたことを
特徴とする温度検出装置。2. The temperature detecting device according to claim 1, wherein the measuring object is formed of a semiconductor wafer.
と、 このフッ素系熱媒体を蓄えた液槽と、 この液槽内のフッ素系熱媒体を基準温度に調整して維持
する温度調整手段と、 前記液槽内のフッ素系熱媒体の正確な温度を測定する測
温手段と、 前記液槽内に浸漬された請求項１または２に記載の温度
検出装置の各熱電対からの測定値及び前記測温手段から
の測定値によって各熱電対の校正値を算出する校正値算
出手段とを有して構成されたことを特徴とする校正装
置。3. A fluorine-based heat medium for creating a reference temperature atmosphere, a liquid tank storing the fluorine-based heat medium, and temperature adjusting means for adjusting and maintaining the fluorine-based heat medium in the liquid tank at a reference temperature. A temperature measuring means for measuring an accurate temperature of the fluorine-based heat medium in the liquid tank; and a measurement value from each thermocouple of the temperature detection device according to claim 1 immersed in the liquid tank. A calibration value calculation unit configured to calculate a calibration value of each thermocouple based on a measurement value from the temperature measurement unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8317340A JPH10160597A (en) | 1996-11-28 | 1996-11-28 | Temperature detecting device, and its calibrating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8317340A JPH10160597A (en) | 1996-11-28 | 1996-11-28 | Temperature detecting device, and its calibrating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10160597A true JPH10160597A (en) | 1998-06-19 |
Family
ID=18087134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8317340A Pending JPH10160597A (en) | 1996-11-28 | 1996-11-28 | Temperature detecting device, and its calibrating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10160597A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000066990A1 (en) * | 1999-04-29 | 2000-11-09 | Broenlund Ole Einar | An apparatus for calibration of temperature sensors |
| EP1096231A2 (en) * | 1999-10-26 | 2001-05-02 | Kabushiki Kaisha Equos Research | Navigation system and apparatus |
| EP1628132A1 (en) * | 2004-08-17 | 2006-02-22 | Sensirion AG | Method and device for calibrating sensors |
| JP2008187085A (en) * | 2007-01-31 | 2008-08-14 | Tokyo Electron Ltd | Inspecting device and inspecting method for substrate for temperature monitoring |
| US8499609B2 (en) | 2009-06-04 | 2013-08-06 | Sensirion Ag | Method and apparatus for processing individual sensor devices |
| US8643361B2 (en) | 2010-07-14 | 2014-02-04 | Sensirion Ag | Needle head |
| CN104458059A (en) * | 2014-11-25 | 2015-03-25 | 安徽恒源煤电股份有限公司 | Calibration device of thermocouple series |
| CN112345119A (en) * | 2020-09-25 | 2021-02-09 | 华东光电集成器件研究所 | Semiconductor wafer temperature calibration system |
| WO2024062887A1 (en) * | 2022-09-20 | 2024-03-28 | 東京エレクトロン株式会社 | Method for calibrating temperature-measuring substrate, system for measuring substrate temperature, and temperature-measuring substrate |
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| JPH0296634A (en) * | 1988-10-03 | 1990-04-09 | Tabai Espec Corp | Liquid tank type environment testing apparatus |
| JPH08254512A (en) * | 1994-10-19 | 1996-10-01 | Interuniv Micro Electro Centrum Vzw | Method and device for evaluating thermal impedance of packaged semiconductor constituting element |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU774624B2 (en) * | 1999-04-29 | 2004-07-01 | Ole Einar Bronlund | An apparatus for calibration of temperature sensors |
| KR100705375B1 (en) * | 1999-04-29 | 2007-04-10 | 오레 아이나르 브뢴룬드 | An apparatus for calibration of temperature sensors |
| US6709152B1 (en) | 1999-04-29 | 2004-03-23 | Ole Einar Bronlund | Apparatus for calibration of temperature sensors |
| WO2000066990A1 (en) * | 1999-04-29 | 2000-11-09 | Broenlund Ole Einar | An apparatus for calibration of temperature sensors |
| EP1096231A3 (en) * | 1999-10-26 | 2004-05-19 | Kabushiki Kaisha Equos Research | Navigation system and apparatus |
| EP1096231A2 (en) * | 1999-10-26 | 2001-05-02 | Kabushiki Kaisha Equos Research | Navigation system and apparatus |
| EP1628132A1 (en) * | 2004-08-17 | 2006-02-22 | Sensirion AG | Method and device for calibrating sensors |
| US7281405B2 (en) | 2004-08-17 | 2007-10-16 | Sensirion Ag | Method and device for calibration sensors |
| JP2008187085A (en) * | 2007-01-31 | 2008-08-14 | Tokyo Electron Ltd | Inspecting device and inspecting method for substrate for temperature monitoring |
| US8499609B2 (en) | 2009-06-04 | 2013-08-06 | Sensirion Ag | Method and apparatus for processing individual sensor devices |
| US8643361B2 (en) | 2010-07-14 | 2014-02-04 | Sensirion Ag | Needle head |
| CN104458059A (en) * | 2014-11-25 | 2015-03-25 | 安徽恒源煤电股份有限公司 | Calibration device of thermocouple series |
| CN112345119A (en) * | 2020-09-25 | 2021-02-09 | 华东光电集成器件研究所 | Semiconductor wafer temperature calibration system |
| WO2024062887A1 (en) * | 2022-09-20 | 2024-03-28 | 東京エレクトロン株式会社 | Method for calibrating temperature-measuring substrate, system for measuring substrate temperature, and temperature-measuring substrate |
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