JPH10150178A - Solid-state image sensing device and its manufacture - Google Patents

Solid-state image sensing device and its manufacture

Info

Publication number
JPH10150178A
JPH10150178A JP8307793A JP30779396A JPH10150178A JP H10150178 A JPH10150178 A JP H10150178A JP 8307793 A JP8307793 A JP 8307793A JP 30779396 A JP30779396 A JP 30779396A JP H10150178 A JPH10150178 A JP H10150178A
Authority
JP
Japan
Prior art keywords
wire
solid
imaging device
state imaging
electrode pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8307793A
Other languages
Japanese (ja)
Inventor
Seiichi Uehara
誠一 上原
Shoichi Miyazawa
正一 宮澤
Toshiyuki Kozono
利幸 小薗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP8307793A priority Critical patent/JPH10150178A/en
Publication of JPH10150178A publication Critical patent/JPH10150178A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent the generation of a short-circuit between wires and a solid-state image sensing element in the case where electrode pads on the element are connected with inner leads on a package by the wires and also to prevent the generation of trouble that unnecessary reflected light of external incident light due to the wires enters a photoelectric conversion part on the element to generate a dummy signal. SOLUTION: When electrode pads 13, which are provided on the periphery of a photoelectric conversion part on the light-receiving surface of a solid-state image sensing element 12 fixed on the inner bottom of a package 11, are connected with inner leads 14a, which are provided on the inner bottom of the package in a state that the leads 14 are adjacent to the element 12, by wires 15, at least two places of bending parts 22 and 23 are provided in the middle of each of the wires 15 and the wires 15 are folded back within the plane, which includes wire connection points to connect the pads 13 and the leads 14 with each other via the wires 15 and is vertical to the inner bottom of the package 11.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、固体撮像素子の受
光面上の電極パッドとパッケージのインナーリードもし
くは回路基板の主面に配設された配線パターンとをワイ
ヤで相互に接続した固体撮像装置およびその製造方法に
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device in which an electrode pad on a light-receiving surface of a solid-state imaging device and a wiring pattern provided on an inner lead of a package or a main surface of a circuit board are interconnected by wires. And its manufacturing method.

【０００２】[0002]

【従来の技術】近年、半導体産業では、製造技術の進歩
とともに、固体撮像素子およびパッケージの小型化が進
み、ワイヤ結線工程においても様々な対応が要求されて
いる。以下、図面を参照しながら従来例の固体撮像装置
およびその製造方法について説明を行う。2. Description of the Related Art In recent years, in the semiconductor industry, with the progress of manufacturing technology, the size of solid-state imaging devices and packages has been reduced, and various measures have been required in a wire connection process. Hereinafter, a conventional solid-state imaging device and a manufacturing method thereof will be described with reference to the drawings.

【０００３】図４に従来の固体撮像装置における、ワイ
ヤ結線作業終了後の状態の断面模式図を示し、図５にそ
のワイヤ結線部分を拡大した断面模式図を示す。図４お
よび図５において、固体撮像素子３２は、受光面上の光
電変換部３２ｂの周辺に例えばアルミ製のワイヤ結線用
の電極パッド３３を設けている。上面開放の中空のパッ
ケージ３１は、例えばセラミックまたは樹脂からなり、
内底面に固体撮像素子３２を接着固定（ダイボンド）し
かつ固体撮像素子３２に近接した状態にワイヤ結線用の
インナーリード３４を内底面に配設している。結線用の
ワイヤ３５は、電極パッド３３とインナーリード３４と
を相互に接続するようになっている。FIG. 4 is a schematic cross-sectional view of a conventional solid-state imaging device after completion of a wire connection operation, and FIG. 5 is an enlarged schematic cross-sectional view of the wire connection portion. 4 and 5, the solid-state imaging device 32 is provided with, for example, an aluminum wire connection electrode pad 33 around the photoelectric conversion portion 32b on the light receiving surface. The hollow package 31 having an open top surface is made of, for example, ceramic or resin,
The solid-state imaging device 32 is bonded and fixed (die-bonded) to the inner bottom surface, and an inner lead 34 for wire connection is arranged on the inner bottom surface in a state close to the solid-state imaging device 32. The connection wire 35 connects the electrode pad 33 and the inner lead 34 to each other.

【０００４】この場合、パッケージ３１は、固体撮像装
置の薄型化のために、内底面のうちの固体撮像素子３２
の設置面とインナーリード３４の設置面とをほぼ同じ高
さにしてあり、固体撮像素子３２の受光面上の電極パッ
ド３３の表面とインナーリード３４の表面の段差が大き
くなっている。この段差は、上述のように、薄型化を目
的とした中空パッケージをもった固体撮像装置の場合に
大きいものとなる。In this case, the package 31 is provided with a solid-state image sensor 32 on the inner bottom surface in order to reduce the thickness of the solid-state image sensor.
The mounting surface of the inner lead 34 and the mounting surface of the inner lead 34 are substantially at the same height, and the step between the surface of the electrode pad 33 on the light receiving surface of the solid-state imaging device 32 and the surface of the inner lead 34 is large. This step is large in the case of a solid-state imaging device having a hollow package for the purpose of thinning as described above.

【０００５】なお、薄型化が要求されない場合には、イ
ンナーリードの設置面を半導体素子の設置面より高くす
ること、すなわち、パッケージの底面を中央の低段部と
周辺の高段部との２段構造にし、中央の低段部に半導体
素子を設置し、周辺の高段部にインナーリードを設置す
ることができるので、半導体素子の表面とインナーリー
ドの表面の段差は小さくできる。In the case where thinning is not required, the mounting surface of the inner leads should be higher than the mounting surface of the semiconductor element, that is, the bottom surface of the package should be divided into a central low step portion and a peripheral high step portion. Since a step structure is adopted, the semiconductor element can be installed at the lower central step and the inner lead can be installed at the higher peripheral step, the step between the surface of the semiconductor element and the surface of the inner lead can be reduced.

【０００６】また、電極パッド３３のワイヤ接続点およ
びインナーリード３４のワイヤ接続点はいずれも上を向
いているため、ワイヤ３５は、相互に接続すべき電極パ
ッド３３のワイヤ接続点とインナーリード３４のワイヤ
接続点とを含みかつパッケージ３１の内底面に対して略
垂直な面内で、途中で鋭角的な１箇所の屈曲部４２を設
けて折り返している。また、電極パッド３３のワイヤ接
続点には、電極パッド３３にワイヤ３５を圧着するため
にパッド側ワイヤつぶれ部４１が発生する。Further, since the wire connection point of the electrode pad 33 and the wire connection point of the inner lead 34 are both upward, the wire 35 is connected to the wire connection point of the electrode pad 33 to be connected to the inner lead 34. In a plane substantially perpendicular to the inner bottom surface of the package 31 and including one of the wire connection points described above, one sharp bent portion 42 is provided in the middle and folded. At the wire connection point of the electrode pad 33, a pad-side wire crushing portion 41 is generated for crimping the wire 35 to the electrode pad 33.

【０００７】なお、ダスト除去のための有機溶剤による
洗浄・乾燥工程の後、パッケージ３１の開口部は、透明
のガラス板で封止される。以下、上記のように構成され
た固体撮像装置で、ワイヤ結線する時の手順とワイヤの
形状について説明する。図５において、まず固体撮像素
子３２の受光面上の光電変換部３２ｂの周辺に設けられ
た電極パッド３３にワイヤ３５を結線するために、ワイ
ヤ３５が電極パッド３３に圧着され、パット側ワイヤつ
ぶれ部４１が形成される。つづいて、電極パッド３３に
接続されたワイヤ３５は、電極パッド３３に対し略垂直
上方向へ引き出され、鋭角的な１箇所の屈曲部４２が形
成された後、インナーリード３４側へ斜め下方向に引き
出される。そして、インナーリード３４側へ導かれてき
たワイヤ３５は、インナーリード３４へ圧着される。After the washing and drying steps using an organic solvent for dust removal, the opening of the package 31 is sealed with a transparent glass plate. Hereinafter, a description will be given of a procedure for connecting wires and a shape of the wires in the solid-state imaging device configured as described above. In FIG. 5, first, in order to connect the wire 35 to the electrode pad 33 provided around the photoelectric conversion portion 32b on the light receiving surface of the solid-state imaging device 32, the wire 35 is crimped to the electrode pad 33, and the pat-side wire collapses. A part 41 is formed. Subsequently, the wire 35 connected to the electrode pad 33 is pulled out substantially vertically upward with respect to the electrode pad 33, and after one sharp bent portion 42 is formed, the wire 35 is inclined obliquely downward to the inner lead 34 side. Drawn to. Then, the wire 35 guided to the inner lead 34 is crimped to the inner lead 34.

【０００８】上記の屈曲部４２は、例えば以下のように
して形成される。すなわち、ワイヤボンダのキャピラリ
の先端からワイヤが導出されており、キャピラリ先端の
動きでワイヤ形状がおおむね決まる。図５のような場合
は、キャピラリ先端は三角形の２辺をなぞる形で動かす
ことで、屈曲部４２を形成できる。以上の手順を実施す
ることで、図４と図５に示すように、固体撮像素子３２
とインナーリード３４がワイヤ３５によりワイヤ結線さ
れた状態となる。The bent portion 42 is formed, for example, as follows. That is, the wire is led out from the tip of the capillary of the wire bonder, and the shape of the wire is largely determined by the movement of the tip of the capillary. In the case shown in FIG. 5, the bent portion 42 can be formed by moving the tip of the capillary along the two sides of the triangle. By performing the above procedure, as shown in FIGS.
And the inner lead 34 is connected by the wire 35.

【０００９】[0009]

【発明が解決しようとする課題】しかしながら、上記の
従来例の固体撮像装置におけるワイヤ形状では、前述し
たように、電極パッド３３の表面の高さに比べインナー
リード３４の表面の高さが低い場合で、かつ固体撮像素
子３２とインナーリード３４とが近接している場合に、
固体撮像素子３２のエッジ部３２ａとワイヤ３５との間
の隙間が狭くなり、固体撮像素子３２とワイヤ３５との
間でショートが発生するという問題点があった。However, in the wire shape in the above-described conventional solid-state imaging device, as described above, when the height of the surface of the inner lead 34 is lower than the height of the surface of the electrode pad 33, as described above. And when the solid-state imaging device 32 and the inner lead 34 are close to each other,
There is a problem that a gap between the edge portion 32a of the solid-state imaging device 32 and the wire 35 becomes narrow, and a short circuit occurs between the solid-state imaging device 32 and the wire 35.

【００１０】上記のような固体撮像素子３２とワイヤ３
５との間のショートの問題を回避するには、ワイヤ３５
を長くして屈曲部４２を固体撮像素子３２から離すこと
が考えられる。ところが、このような手段で、ショート
の問題を回避すると、今度は、外部入射光の一部がワイ
ヤ３５に当たり、それが反射して固体撮像素子３２の光
電変換部３２ｂに直接入射したり、またはワイヤ３５で
反射した光がパッケージ３１の開口部に設けた透明の封
止ガラス板（図示せず）に当たり、そこからの反射光が
固体撮像素子３２の光電変換部３２ｂに入射する可能性
が大となり、疑似信号が発生しやすくなるという問題が
生じる。The solid-state image sensor 32 and the wire 3 as described above
5 to avoid the problem of short circuit
May be lengthened to separate the bent portion 42 from the solid-state imaging device 32. However, if the problem of short circuit is avoided by such means, a part of the externally incident light hits the wire 35, which reflects and directly enters the photoelectric conversion unit 32b of the solid-state imaging device 32, or The light reflected by the wire 35 hits a transparent sealing glass plate (not shown) provided in the opening of the package 31, and the light reflected therefrom is likely to be incident on the photoelectric conversion unit 32 b of the solid-state imaging device 32. This causes a problem that a pseudo signal is easily generated.

【００１１】なお、上記従来例は、パッケージ３１に固
体撮像素子３２が固定され、固体撮像素子３２の電極パ
ッド３３とパッケージ３１のインナーリード３４とをワ
イヤ３５で結線する場合の問題点について説明したが、
固体撮像素子を他の部品とともに回路基板に搭載し、固
体撮像素子の電極パッドと回路基板の配線パターンとを
ワイヤで結線する場合にも、上記と同様の問題が生じ
る。In the above-mentioned conventional example, the problem in the case where the solid-state image sensor 32 is fixed to the package 31 and the electrode pads 33 of the solid-state image sensor 32 and the inner leads 34 of the package 31 are connected by wires 35 has been described. But,
The same problem as described above occurs when the solid-state imaging device is mounted on a circuit board together with other components, and the electrode pads of the solid-state imaging device and the wiring patterns of the circuit board are connected by wires.

【００１２】また、他の問題として、以下に述べるよう
な問題が存在する。すなわち、固体撮像装置を製造する
工程の最終段階において、透明ガラス板を封止する前
に、中空部となるところのダストを除去する目的で、固
体撮像素子を有機溶剤で洗浄する。しかし、図５のよう
に、ワイヤ３５と固体撮像素子３２とがエッジ部３２ａ
で接近していると、洗浄後において有機溶剤を乾燥させ
るとに、エッジ部３２ａに表面張力のために有機溶剤が
最後まで残ってしまう。その残った有機溶剤にはダスト
が含まれており、乾燥工程の最後において、残った有機
溶剤がワイヤから離れて固体撮像素子側に移るときに、
固体撮像素子表面の画素部にまで広がり、その結果画素
部にダストを付着させてしまい、固体撮像素子の画像に
しみ状のパターンとして現れることになる。As another problem, there is the following problem. That is, in the final stage of the process of manufacturing the solid-state imaging device, the solid-state imaging device is washed with an organic solvent before the transparent glass plate is sealed, in order to remove dust in the hollow portion. However, as shown in FIG. 5, the wire 35 and the solid-state image sensor 32 are connected to the edge 32a.
When the organic solvent is dried after cleaning, the organic solvent remains to the end due to surface tension at the edge 32a. The remaining organic solvent contains dust, and at the end of the drying process, when the remaining organic solvent moves away from the wire to the solid-state imaging device side,
It spreads to the pixel portion on the surface of the solid-state imaging device, and as a result, dust adheres to the pixel portion, and appears as a spot-like pattern in the image of the solid-state imaging device.

【００１３】したがって、この発明の目的は、固体撮像
素子の電極パッドとパッケージのインナーリードとの間
に固体撮像素子の電極パッドの方が高い段差が存在し、
かつ電極パッドとインナーリードとが近接している場合
において、電極パッドとインナーリードとをワイヤで結
線する場合のワイヤと固体撮像素子との間のショートを
防止できるとともに、外部入射光のワイヤによる不要な
反射光が固体撮像素子の光電変換部へ入って疑似信号が
発生するのを防止できる固体撮像装置およびその製造方
法を提供することである。Accordingly, an object of the present invention is to provide a structure in which an electrode pad of a solid-state image sensor has a higher step between an electrode pad of the solid-state image sensor and an inner lead of a package.
In addition, when the electrode pad and the inner lead are close to each other, it is possible to prevent a short circuit between the wire and the solid-state imaging device when connecting the electrode pad and the inner lead with a wire, and it is unnecessary to use a wire for external incident light. An object of the present invention is to provide a solid-state imaging device and a method for manufacturing the solid-state imaging device, which can prevent generation of a false signal due to a reflected light entering a photoelectric conversion unit of a solid-state imaging device.

【００１４】この発明の他の目的は、固体撮像素子の電
極パッドと回路基板の配線パターンとの間に固体撮像素
子の電極パッドの方が高い段差が存在し、かつ電極パッ
ドと配線パターンとが近接している場合において、電極
パッドと配線パターンとをワイヤで結線する場合のワイ
ヤと固体撮像素子との間のショートを防止できるととも
に、外部入射光のワイヤによる不要な反射光が固体撮像
素子の光電変換部へ入って疑似信号が発生するのを防止
できる固体撮像装置およびその製造方法を提供すること
である。Another object of the present invention is to provide a solid-state image sensing device having a higher step between the electrode pad of the solid-state image sensing device and the wiring pattern of the circuit board, and the electrode pad and the wiring pattern are not connected to each other. When the electrodes are close to each other, a short circuit between the wire and the solid-state imaging device when the electrode pad and the wiring pattern are connected by a wire can be prevented, and unnecessary reflected light of the wire of external incident light by the wire can be prevented. An object of the present invention is to provide a solid-state imaging device capable of preventing generation of a false signal by entering a photoelectric conversion unit and a method of manufacturing the same.

【００１５】この発明のさらに他の目的は、画素部にダ
ストが付着して固体撮像素子の画像にしみ状のパターン
として現れるのを防止することができる固体撮像装置お
よびその製造方法を提供することである。Still another object of the present invention is to provide a solid-state imaging device capable of preventing dust from adhering to a pixel portion and appearing as a spot-like pattern in an image of a solid-state imaging device, and a method of manufacturing the same. It is.

【００１６】[0016]

【課題を解決するための手段】本発明の請求項１記載の
固体撮像装置は、受光面上の光電変換部の周辺に電極パ
ッドを設けた固体撮像素子と、内底面に固体撮像素子が
固定されかつ固体撮像素子に近接した状態にインナーリ
ードが内底面に配設されたパッケージと、電極パッドと
インナーリードとを相互に接続するワイヤとを備え、ワ
イヤを介して相互に接続すべき電極パッドのワイヤ接続
点とインナーリードのワイヤ接続点とを含みかつパッケ
ージの内底面に対して略垂直な面内で、ワイヤを途中で
少なくとも２箇所の屈曲部を設けて折り返している。According to a first aspect of the present invention, there is provided a solid-state imaging device having an electrode pad provided around a photoelectric conversion portion on a light receiving surface, and a solid-state imaging device fixed to an inner bottom surface. A package in which inner leads are provided on the inner bottom surface in a state close to the solid-state imaging device, and wires for interconnecting the electrode pads and the inner leads, and electrode pads to be interconnected via the wires In a plane including the wire connection point of the inner lead and the wire connection point of the inner lead and being substantially perpendicular to the inner bottom surface of the package, the wire is folded back with at least two bent portions provided in the middle.

【００１７】この構成によると、固体撮像素子の電極パ
ッドとパッケージのインナーリードとの間に固体撮像素
子の電極パッドの方が高い段差が存在し、かつ電極パッ
ドとインナーリードとが近接している場合において、相
互に接続すべき電極パッドのワイヤ接続点とインナーリ
ードのワイヤ接続点とを含みかつパッケージの内底面に
対して略垂直な面内で、ワイヤを途中で少なくとも２箇
所の屈曲部を設けて折り返すので、固体撮像素子とワイ
ヤとを十分に離隔させることができ、電極パッドとイン
ナーリードとをワイヤで結線する場合のワイヤと固体撮
像素子との間のショートを防止することができる。According to this structure, the electrode pad of the solid-state imaging device has a higher step between the electrode pad of the solid-state imaging device and the inner lead of the package, and the electrode pad and the inner lead are close to each other. In this case, at least two bent portions are formed in the middle of the wire in a plane including the wire connection point of the electrode pad to be connected to each other and the wire connection point of the inner lead and substantially perpendicular to the inner bottom surface of the package. Since the wire is provided and folded, the solid-state imaging device and the wire can be sufficiently separated from each other, and a short circuit between the wire and the solid-state imaging device when the electrode pad and the inner lead are connected by the wire can be prevented.

【００１８】しかも、ワイヤと固体撮像素子との間のシ
ョートを防止するために、電極パッドからそれに最も近
いワイヤの屈曲部までの寸法を大きくする必要はないの
で、外部入射光のワイヤによる不要な反射光が固体撮像
素子の光電変換部へ入って疑似信号が発生するのを防止
できる。さらに、固体撮像素子とワイヤとを十分に離隔
させることができることから、ダスト除去のために有機
溶剤による洗浄およびその乾燥を行うときに、固体撮像
素子とワイヤと間にダストを含む有機溶剤が残ることが
なくなるので、乾燥工程の最後にダストを含む有機溶剤
が画素部に広がるのを防止でき、その結果画素部にダス
トが付着して固体撮像素子の画像にしみ状のパターンと
して現れるのを防止することができる。Moreover, in order to prevent a short circuit between the wire and the solid-state image pickup device, it is not necessary to increase the dimension from the electrode pad to the nearest bent portion of the wire. It is possible to prevent the reflected light from entering the photoelectric conversion unit of the solid-state imaging device and generating a pseudo signal. Furthermore, since the solid-state imaging device and the wire can be sufficiently separated, when cleaning with an organic solvent for dust removal and drying thereof are performed, an organic solvent containing dust remains between the solid-state imaging device and the wire. As a result, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, thereby preventing the dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device. can do.

【００１９】また、本発明の請求項２記載の固体撮像装
置は、受光面上の光電変換部の周辺に電極パッドを設け
た固体撮像素子と、主面に固体撮像素子が固定されかつ
固体撮像素子に近接した状態に配線パターンが主面に配
設された回路基板と、電極パッドと配線パターンとを相
互に接続するワイヤとを備え、ワイヤを介して相互に接
続すべき電極パッドのワイヤ接続点と配線パターンのワ
イヤ接続点とを含みかつ回路基板の主面に対して略垂直
な面内で、ワイヤを途中で少なくとも２箇所の屈曲部を
設けて折り返している。According to a second aspect of the present invention, there is provided a solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light receiving surface, and a solid-state imaging device having a solid-state imaging device fixed on a main surface thereof. A circuit board having a wiring pattern disposed on the main surface in a state close to the element; and a wire for interconnecting the electrode pad and the wiring pattern, and wire connection of the electrode pad to be interconnected via the wire In a plane including the point and the wire connection point of the wiring pattern and substantially perpendicular to the main surface of the circuit board, the wire is folded back with at least two bent portions provided in the middle.

【００２０】この構成によると、固体撮像素子の電極パ
ッドと回路基板の配線パターンとの間に固体撮像素子の
電極パッドの方が高い段差が存在し、かつ電極パッドと
配線パターンとが近接している場合において、相互に接
続すべき電極パッドのワイヤ接続点と配線パターンのワ
イヤ接続点とを含みかつ回路基板の主面に対して略垂直
な面内で、ワイヤを途中で少なくとも２箇所の屈曲部を
設けて折り返すので、固体撮像素子とワイヤとを十分に
離隔させることができ、電極パッドと配線パターンとを
ワイヤで結線する場合のワイヤと固体撮像素子との間の
ショートを防止することができる。According to this structure, the electrode pad of the solid-state imaging device has a higher step between the electrode pad of the solid-state imaging device and the wiring pattern of the circuit board, and the electrode pad and the wiring pattern are close to each other. At least two bends in the middle of a plane including a wire connection point of an electrode pad to be connected to each other and a wire connection point of a wiring pattern and substantially perpendicular to the main surface of the circuit board. Since the portion is provided and folded, the solid-state imaging device and the wire can be sufficiently separated from each other, and a short circuit between the wire and the solid-state imaging device when the electrode pad and the wiring pattern are connected by the wire can be prevented. it can.

【００２１】しかも、ワイヤと固体撮像素子との間のシ
ョートを防止するために、電極パッドからそれに最も近
いワイヤの屈曲部までの寸法を大きくする必要はないの
で、外部入射光のワイヤによる不要な反射光が固体撮像
素子の光電変換部へ入って疑似信号が発生するのを防止
できる。さらに、固体撮像素子とワイヤとを十分に離隔
させることができることから、ダスト除去のために有機
溶剤による洗浄およびその乾燥を行うときに、固体撮像
素子とワイヤと間にダストを含む有機溶剤が残ることが
なくなるので、乾燥工程の最後にダストを含む有機溶剤
が画素部に広がるのを防止でき、その結果画素部にダス
トが付着して固体撮像素子の画像にしみ状のパターンと
して現れるのを防止することができる。In addition, since it is not necessary to increase the dimension from the electrode pad to the nearest bent portion of the wire in order to prevent a short circuit between the wire and the solid-state image pickup device, unnecessary wire by external incident light due to the wire is unnecessary. It is possible to prevent the reflected light from entering the photoelectric conversion unit of the solid-state imaging device and generating a pseudo signal. Furthermore, since the solid-state imaging device and the wire can be sufficiently separated, when cleaning with an organic solvent for dust removal and drying thereof are performed, an organic solvent containing dust remains between the solid-state imaging device and the wire. As a result, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, thereby preventing the dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device. can do.

【００２２】本発明の請求項３記載の固体撮像装置の製
造方法は、受光面上の光電変換部の周辺に電極パッドを
設けた固体撮像素子と、内底面に固体撮像素子が固定さ
れかつ固体撮像素子に近接した状態にインナーリードが
内底面に配設されたパッケージと、電極パッドとインナ
ーリードとを相互に接続するワイヤとを備え、ワイヤを
介して相互に接続すべき電極パッドのワイヤ接続点とイ
ンナーリードのワイヤ接続点とを含みかつパッケージの
内底面に対して略垂直な面内で、ワイヤを途中で２箇所
の屈曲部を設けて折り返した固体撮像装置を製造する方
法であり、電極パッドのワイヤ接続点とインナーリード
のワイヤ接続点の一方にワイヤの一端を圧着した後ワイ
ヤを上方向に引き出し、電極パッドのワイヤ接続点とイ
ンナーリードのワイヤ接続点の一方の上方位置からワイ
ヤを電極パッドのワイヤ接続点とインナーリードのワイ
ヤ接続点の他方の上方位置に向かって横方向に引き出
し、つづいてワイヤを下方向に引き出してワイヤの他端
を電極パッドのワイヤ接続点とインナーリードのワイヤ
接続点の他方に圧着することを特徴とする。According to a third aspect of the present invention, there is provided a method of manufacturing a solid-state imaging device, comprising: a solid-state imaging device having an electrode pad provided around a photoelectric conversion portion on a light receiving surface; A package in which inner leads are provided on the inner bottom surface in a state close to the imaging element; and wires for connecting the electrode pads and the inner leads to each other, and wire connection of the electrode pads to be connected to each other via the wires A method for manufacturing a solid-state imaging device in which a wire is provided with two bent portions in the middle and folded back in a plane including a point and a wire connection point of an inner lead and substantially perpendicular to an inner bottom surface of the package, One end of the wire is crimped to one of the wire connection point of the electrode pad and the wire connection point of the inner lead, and then the wire is pulled out upward. The wire is drawn laterally from one upper position of the wire connection point toward the wire connection point of the electrode pad and the other upper position of the wire connection point of the inner lead, and then the wire is drawn downward and the other end of the wire is drawn. To the other of the wire connection point of the electrode pad and the wire connection point of the inner lead.

【００２３】この方法によると、固体撮像素子の電極パ
ッドと回路基板の配線パターンとの間に固体撮像素子の
電極パッドの方が高い段差が存在し、かつ電極パッドと
配線パターンとが近接している場合において、電極パッ
ドのワイヤ接続点とインナーリードのワイヤ接続点の一
方にワイヤの一端を圧着した後ワイヤを上方向に引き出
し、電極パッドのワイヤ接続点とインナーリードのワイ
ヤ接続点の一方の上方位置からワイヤを電極パッドのワ
イヤ接続点とインナーリードのワイヤ接続点の他方の上
方位置に向かって横方向に引き出し、つづいてワイヤを
下方向に引き出してワイヤの他端を電極パッドのワイヤ
接続点とインナーリードのワイヤ接続点の他方に圧着す
るので、相互に接続すべき電極パッドのワイヤ接続点と
インナーリードのワイヤ接続点とを含みかつパッケージ
の内底面に対して略垂直な面内で、ワイヤを途中で少な
くとも２箇所の屈曲部を設けて折り返すことができ、し
たがって固体撮像素子とワイヤとを十分に離隔させるこ
とができ、電極パッドと配線パターンとをワイヤで結線
する場合のワイヤと固体撮像素子との間のショートを防
止することができる。According to this method, there is a higher step between the electrode pad of the solid-state imaging device and the wiring pattern of the circuit board, and the electrode pad and the wiring pattern are close to each other. When one end of the wire is crimped to one of the wire connection point of the electrode pad and the wire connection point of the inner lead, the wire is pulled out upward, and one of the wire connection point of the electrode pad and the wire connection point of the inner lead is drawn. From the upper position, the wire is pulled out laterally toward the other upper position between the wire connection point of the electrode pad and the wire connection point of the inner lead, and then the wire is pulled down, and the other end of the wire is connected to the wire of the electrode pad. Since the wire is crimped to the other of the wire connection point of the inner lead and the wire connection point of the inner lead, And at least two bends in the middle of the package in a plane including the ear connection point and substantially perpendicular to the inner bottom surface of the package, so that the solid-state imaging device and the wire can be sufficiently separated from each other. This can prevent a short circuit between the wire and the solid-state imaging device when the electrode pad and the wiring pattern are connected by a wire.

【００２４】しかも、ワイヤと固体撮像素子との間のシ
ョートを防止するために、電極パッドからそれに最も近
いワイヤの屈曲部までの寸法を大きくする必要はないの
で、外部入射光のワイヤによる不要な反射光が固体撮像
素子の光電変換部へ入って疑似信号が発生するのを防止
できる。さらに、固体撮像素子とワイヤとを十分に離隔
させることができることから、ダスト除去のために有機
溶剤による洗浄およびその乾燥を行うときに、固体撮像
素子とワイヤと間にダストを含む有機溶剤が残ることが
なくなるので、乾燥工程の最後にダストを含む有機溶剤
が画素部に広がるのを防止でき、その結果画素部にダス
トが付着して固体撮像素子の画像にしみ状のパターンと
して現れるのを防止することができる。Further, in order to prevent a short circuit between the wire and the solid-state imaging device, it is not necessary to increase the dimension from the electrode pad to the nearest bent portion of the wire. It is possible to prevent the reflected light from entering the photoelectric conversion unit of the solid-state imaging device and generating a pseudo signal. Furthermore, since the solid-state imaging device and the wire can be sufficiently separated, when cleaning with an organic solvent for dust removal and drying thereof are performed, an organic solvent containing dust remains between the solid-state imaging device and the wire. As a result, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, thereby preventing the dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device. can do.

【００２５】本発明の請求項４記載の固体撮像装置の製
造方法は、受光面上の光電変換部の周辺に電極パッドを
設けた固体撮像素子と、主面に固体撮像素子が固定され
かつ固体撮像素子に近接した状態に配線パターンが主面
に配設された回路基板と、電極パッドと配線パターンと
を相互に接続するワイヤとを備え、ワイヤを介して相互
に接続すべき電極パッドのワイヤ接続点と配線パターン
のワイヤ接続点とを含みかつ回路基板の主面に対して略
垂直な面内で、ワイヤを途中で２箇所の屈曲部を設けて
折り返した固体撮像装置を製造する方法であり、電極パ
ッドのワイヤ接続点と配線パターンのワイヤ接続点の一
方にワイヤの一端を圧着した後ワイヤを上方向に引き出
し、電極パッドのワイヤ接続点と配線パターンのワイヤ
接続点の一方の上方位置からワイヤを電極パッドのワイ
ヤ接続点と配線パターンのワイヤ接続点の他方の上方位
置に向かって横方向に引き出し、つづいてワイヤを下方
向に引き出してワイヤの他端を電極パッドのワイヤ接続
点と配線パターンのワイヤ接続点の他方に圧着すること
を特徴とする。According to a fourth aspect of the present invention, there is provided a method for manufacturing a solid-state imaging device, comprising: a solid-state imaging device having an electrode pad provided around a photoelectric conversion portion on a light receiving surface; A circuit board having a wiring pattern disposed on the main surface in a state close to the imaging element; and a wire for interconnecting the electrode pad and the wiring pattern, wherein the wire of the electrode pad to be interconnected via the wire A method for manufacturing a solid-state imaging device in which a wire is provided with two bent portions in the middle and turned back in a plane including a connection point and a wire connection point of a wiring pattern and substantially perpendicular to the main surface of the circuit board. Yes, one end of the wire is crimped to one of the wire connection point of the electrode pad and one of the wire connection points of the wiring pattern, and then the wire is pulled out upward. From the position, the wire is pulled out laterally toward the wire connection point of the electrode pad and the other upper position of the wire connection point of the wiring pattern, and then the wire is drawn down, and the other end of the wire is connected to the wire connection point of the electrode pad. And crimped to the other of the wire connection points of the wiring pattern.

【００２６】この方法によると、固体撮像素子の電極パ
ッドと回路基板の配線パターンとの間に固体撮像素子の
電極パッドの方が高い段差が存在し、かつ電極パッドと
配線パターンとが近接している場合において、電極パッ
ドのワイヤ接続点と配線パターンのワイヤ接続点の一方
にワイヤの一端を圧着した後ワイヤを上方向に引き出
し、電極パッドのワイヤ接続点と配線パターンのワイヤ
接続点の一方の上方位置からワイヤを電極パッドのワイ
ヤ接続点と配線パターンのワイヤ接続点の他方の上方位
置に向かって横方向に引き出し、つづいてワイヤを下方
向に引き出してワイヤの他端を電極パッドのワイヤ接続
点と配線パターンのワイヤ接続点の他方に圧着するの
で、相互に接続すべき電極パッドのワイヤ接続点と配線
パターンのワイヤ接続点とを含みかつ回路基板の主面に
対して略垂直な面内で、ワイヤを途中で少なくとも２箇
所の屈曲部を設けて折り返すことができ、したがって固
体撮像素子とワイヤとを十分に離隔させることができ、
電極パッドと配線パターンとをワイヤで結線する場合の
ワイヤと固体撮像素子との間のショートを防止すること
ができる。According to this method, the electrode pad of the solid-state image sensor has a higher step between the electrode pad of the solid-state image sensor and the wiring pattern of the circuit board, and the electrode pad and the wiring pattern are close to each other. When one end of the wire is crimped to one of the wire connection point of the electrode pad and the wire connection point of the wiring pattern, the wire is pulled out upward, and one of the wire connection point of the electrode pad and the wire connection point of the wiring pattern is drawn. From the upper position, the wire is pulled out laterally toward the wire connection point of the electrode pad and the other upper position of the wire connection point of the wiring pattern, and then the wire is drawn down, and the other end of the wire is connected to the electrode pad. Since the wire is crimped to the other of the point and the wire connection point of the wiring pattern, the wire connection point of the electrode pad to be interconnected and the wire connection of the wiring pattern And in a plane substantially perpendicular to the main surface of the circuit board, the wire can be folded back by providing at least two bent portions in the middle thereof, so that the solid-state imaging device and the wire are sufficiently separated from each other. Can be
When the electrode pad and the wiring pattern are connected by a wire, a short circuit between the wire and the solid-state imaging device can be prevented.

【００２７】しかも、ワイヤと固体撮像素子との間のシ
ョートを防止するために、電極パッドからそれに最も近
いワイヤの屈曲部までの寸法を大きくする必要はないの
で、外部入射光のワイヤによる不要な反射光が固体撮像
素子の光電変換部へ入って疑似信号が発生するのを防止
できる。さらに、固体撮像素子とワイヤとを十分に離隔
させることができることから、ダスト除去のために有機
溶剤による洗浄およびその乾燥を行うときに、固体撮像
素子とワイヤと間にダストを含む有機溶剤が残ることが
なくなるので、乾燥工程の最後にダストを含む有機溶剤
が画素部に広がるのを防止でき、その結果画素部にダス
トが付着して固体撮像素子の画像にしみ状のパターンと
して現れるのを防止することができる。In addition, since it is not necessary to increase the dimension from the electrode pad to the nearest bent portion of the wire in order to prevent a short circuit between the wire and the solid-state image sensor, unnecessary external light due to the wire is unnecessary. It is possible to prevent the reflected light from entering the photoelectric conversion unit of the solid-state imaging device and generating a pseudo signal. Furthermore, since the solid-state imaging device and the wire can be sufficiently separated, when cleaning with an organic solvent for dust removal and drying thereof are performed, an organic solvent containing dust remains between the solid-state imaging device and the wire. As a result, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, thereby preventing the dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device. can do.

【００２８】[0028]

【発明の実施の形態】以下、本発明の実施の形態の固体
撮像装置およびその製造方法について、図面を参照しな
がら説明する。 〔第１の実施の形態〕図１にこの発明の第１の実施の形
態の固体撮像装置における、ワイヤ結線作業終了後の断
面模式図を示し、図２にそのワイヤ結線部分を拡大した
断面模式図を示す。図１および図２において、固体撮像
素子１２は、受光面上の光電変換部１２ｂの周辺に例え
ばアルミ製のワイヤ結線用の電極パッド１３を設けてい
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a solid-state imaging device according to an embodiment of the present invention and a method for manufacturing the same will be described with reference to the drawings. [First Embodiment] FIG. 1 is a schematic cross-sectional view of a solid-state imaging device according to a first embodiment of the present invention after completion of a wire connection operation, and FIG. 2 is an enlarged schematic cross-sectional view of the wire connection portion. The figure is shown. 1 and 2, the solid-state imaging device 12 is provided with, for example, an aluminum wire connection electrode pad 13 around the photoelectric conversion unit 12b on the light receiving surface.

【００２９】光電変換部１２ｂを有する受光面を外部に
露出させる必要があるために、固体撮像素子１２を取り
付けるパッケージ１１は、上面開放の中空の構造となっ
ている。そして、このパッケージ１１は、内底面に固体
撮像素子１２を接着固定（ダイボンド）し、かつ固体撮
像素子１２に近接した状態にワイヤ結線用のインナーリ
ード１４を内底面に配設している。なお、このパッケー
ジ１１は、例えばセラミック成形品または樹脂成形品か
らなり、予めインナーリード１４を配設して成形してい
る。Since it is necessary to expose the light receiving surface having the photoelectric conversion portion 12b to the outside, the package 11 to which the solid-state image pickup device 12 is mounted has a hollow structure with an open top. In the package 11, the solid-state imaging device 12 is bonded and fixed (die-bonded) to the inner bottom surface, and the inner lead 14 for wire connection is disposed on the inner bottom surface in a state close to the solid-state imaging device 12. The package 11 is made of, for example, a ceramic molded product or a resin molded product, and is formed by disposing the inner leads 14 in advance.

【００３０】この場合、パッケージ１１は、固体撮像装
置の薄型化のために、内底面のうちの固体撮像素子１２
の設置面とインナーリード１４の設置面とをほぼ同じ高
さにしてあり、固体撮像素子１２の受光面上の電極パッ
ド１３の表面とインナーリード１４の表面の段差が大き
くなっている。この段差は、上述のように、薄型化を目
的とした中空パッケージをもった固体撮像装置の場合に
大きいものとなる。In this case, the package 11 is provided with a solid-state image sensor 12 on the inner bottom surface in order to reduce the thickness of the solid-state image sensor.
And the surface on which the inner leads 14 are installed are substantially at the same height, and the step between the surface of the electrode pads 13 on the light receiving surface of the solid-state imaging device 12 and the surface of the inner leads 14 is large. This step is large in the case of a solid-state imaging device having a hollow package for the purpose of thinning as described above.

【００３１】結線用のワイヤ１５は、電極パッド１３と
インナーリード１４とを相互に接続するようになってい
る。この際、電極パッド１３のワイヤ接続点およびイン
ナーリード１４のワイヤ接続点はいずれも上を向いてい
るため、ワイヤ１５は、相互に接続すべき電極パッド１
３のワイヤ接続点とインナーリード１４のワイヤ接続点
とを含みかつパッケージ１１の内底面に対して略垂直な
面内で、途中で略９０度の２箇所の屈曲部２２，２３を
設けて略逆Ｊ字形に折り返している。また、電極パッド
１３のワイヤ接続点には、電極パッド１３にワイヤ１５
を圧着するためにパッド側ワイヤつぶれ部２１が発生す
る。The connection wires 15 connect the electrode pads 13 and the inner leads 14 to each other. At this time, since the wire connection point of the electrode pad 13 and the wire connection point of the inner lead 14 are both facing upward, the wire 15 is connected to the electrode pad 1 to be connected to each other.
In the plane including the wire connection point 3 and the wire connection point of the inner lead 14 and being substantially perpendicular to the inner bottom surface of the package 11, two bent portions 22 and 23 of approximately 90 degrees are provided in the middle thereof. It is folded back into an inverted J shape. In addition, a wire 15 is connected to the electrode pad 13 at a wire connection point of the electrode pad 13.
In this case, the pad-side wire crushing portion 21 is generated in order to compress the wire.

【００３２】なお、パッケージ１１の開口部は、ダスト
除去のために有機溶剤による洗浄・乾燥工程の後、透明
のガラス板で封止される。以下、上記のように構成され
た固体撮像装置で、ワイヤ結線する時の手順とワイヤの
形状について説明する。図２において、まず固体撮像素
子１２の受光面上の光電変換部１２ｂの周辺に設けられ
た電極パッド１３にワイヤ１５を結線するために、ワイ
ヤ１５が電極パッド１３に圧着され、パット側ワイヤつ
ぶれ部２１が形成される。つづいて、電極パッド１３に
接続されたワイヤ１５は、電極パッド１３のワイヤ接続
点に対し略垂直上方向へ引き出され、電極パッド１３の
ワイヤ接続点の略真上位置で略９０度の屈曲部２２が形
成され、そこからインナーリード１４のワイヤ接続点の
上方位置に向かってワイヤ１５が略水平方向に引き出さ
れ、さらにインナーリード１４のワイヤ接続点の上方位
置で９０度より大きい鈍角的な屈曲部２３が形成され、
そこからワイヤ１５が下方向に引き出され、インナーリ
ード１４側へ導かれる。そして、インナーリード１４側
へ導かれてきたワイヤ１５は、インナーリード１４のワ
イヤ接続点へ圧着される。The opening of the package 11 is sealed with a transparent glass plate after a washing and drying process using an organic solvent to remove dust. Hereinafter, a description will be given of a procedure for connecting wires and a shape of the wires in the solid-state imaging device configured as described above. In FIG. 2, first, in order to connect the wire 15 to the electrode pad 13 provided around the photoelectric conversion unit 12b on the light receiving surface of the solid-state imaging device 12, the wire 15 is crimped to the electrode pad 13, and the pad-side wire collapses. The part 21 is formed. Subsequently, the wire 15 connected to the electrode pad 13 is pulled out in a substantially vertical upward direction with respect to the wire connection point of the electrode pad 13, and has a bent portion of approximately 90 degrees at a position almost directly above the wire connection point of the electrode pad 13. 22 is formed, from which the wire 15 is pulled out in a substantially horizontal direction toward a position above the wire connection point of the inner lead 14, and further, an obtuse angle bend greater than 90 degrees at a position above the wire connection point of the inner lead 14. A part 23 is formed,
From there, the wire 15 is pulled out downward and guided to the inner lead 14 side. Then, the wire 15 guided to the inner lead 14 is crimped to a wire connection point of the inner lead 14.

【００３３】屈曲部２２，２３については、従来例で説
明した方法でワイヤ形状が決まるので、この場合は、キ
ャピラリ先端が台形の３辺をなぞる形で、キャピラリを
動かすことで形成できる。以上の手順を実施すること
で、図１と図２に示すように、固体撮像素子１２とイン
ナーリード１４がワイヤ１５によりワイヤ結線された状
態となり、かつ段差の大きさに係わらず固体撮像素子１
２のエッジ１２ａとワイヤ１５との間に十分に広い隙間
を確保できる。Since the wire shape of the bent portions 22 and 23 is determined by the method described in the conventional example, in this case, it can be formed by moving the capillary such that the tip of the capillary traces three sides of a trapezoid. By performing the above procedure, as shown in FIGS. 1 and 2, the solid-state imaging device 12 and the inner lead 14 are in a state of being wire-connected by the wires 15, and the solid-state imaging device 1 is independent of the size of the step.
A sufficiently wide gap can be secured between the second edge 12a and the wire 15.

【００３４】この実施の形態によれば、電極パッド１３
の表面の高さに比べインナーリード１４の表面の高さが
低い場合で、かつ固体撮像素子１２とインナーリード１
４とが近接している場合において、ワイヤ１５を介して
相互に接続すべき電極パッド１３のワイヤ接続点とイン
ナーリード１４のワイヤ接続点とを含みかつパッケージ
１１の内底面に対して略垂直な面内で、ワイヤ１５を途
中で２箇所の屈曲部２２，２３を設けて略逆Ｊ字形に折
り返すので、固体撮像素子１２とワイヤ１５とを十分に
離隔させること、すなわち両者の間の隙間を広く保つこ
とができ、固体撮像素子１２の電極パッド１３とパッケ
ージ１１のインナーリード１４とをワイヤ１５で結線す
る場合のワイヤ１５と固体撮像素子１２のエッジ部１２
ｂとの間のショートを防止することができる。According to this embodiment, the electrode pad 13
When the height of the surface of the inner lead 14 is lower than the height of the surface of the
4 includes a wire connection point of the electrode pad 13 and a wire connection point of the inner lead 14 to be connected to each other via the wire 15 and is substantially perpendicular to the inner bottom surface of the package 11. In the plane, the wire 15 is provided with two bent portions 22 and 23 in the middle and folded back in a substantially inverted J-shape, so that the solid-state imaging device 12 and the wire 15 are sufficiently separated, that is, the gap between the two is reduced. The wire 15 and the edge portion 12 of the solid-state imaging device 12 can be kept wide, when the electrode pad 13 of the solid-state imaging device 12 and the inner lead 14 of the package 11 are connected by the wire 15.
b can be prevented from short-circuiting.

【００３５】しかも、ワイヤ１５と固体撮像素子１２の
エッジ部１２ｂとの間のショートを防止するために、固
体撮像素子１２の電極パッド１３からそれに最も近いワ
イヤ１５の屈曲部２２までの寸法を大きくする必要はな
いので、外部入射光のワイヤ１５による不要な反射光が
固体撮像素子１２の光電変換部１２ｂへ入って疑似信号
が発生するのを防止できる。Moreover, in order to prevent a short circuit between the wire 15 and the edge portion 12b of the solid-state image pickup device 12, the dimension from the electrode pad 13 of the solid-state image pickup device 12 to the bent portion 22 of the wire 15 closest thereto is increased. Therefore, it is possible to prevent unnecessary reflected light of the external incident light from the wire 15 from entering the photoelectric conversion unit 12b of the solid-state imaging device 12 and generating a pseudo signal.

【００３６】さらに、固体撮像素子１２とワイヤ１５と
を十分に離隔させることができることから、ダスト除去
のために有機溶剤による洗浄およびその乾燥を行うとき
に、固体撮像素子１２とワイヤ１５と間にダストを含む
有機溶剤が残ることがなくなるので、乾燥工程の最後に
ダストを含む有機溶剤が画素部に広がるのを防止でき、
その結果画素部にダストが付着して固体撮像素子の画像
にしみ状のパターンとして現れるのを防止することがで
きる。Further, since the solid-state image pickup device 12 and the wire 15 can be sufficiently separated from each other, when cleaning with an organic solvent for removing dust and drying thereof are performed, the space between the solid-state image pickup device 12 and the wire 15 is removed. Since the organic solvent containing dust does not remain, it is possible to prevent the organic solvent containing dust from spreading to the pixel portion at the end of the drying process,
As a result, it is possible to prevent dust from adhering to the pixel portion and appearing as a stain-like pattern in the image of the solid-state imaging device.

【００３７】〔第２の実施の形態〕図３にこの発明の第
２の実施の形態の固体撮像装置における、ワイヤ結線作
業終了後の側面模式図を示す。図３において、固体撮像
素子５２は、受光面上の光電変換部５２ｂの周辺に例え
ばアルミ製のワイヤ結線用の電極パッド５３を設けてい
る。[Second Embodiment] FIG. 3 is a schematic side view of a solid-state imaging device according to a second embodiment of the present invention after completion of a wire connection operation. In FIG. 3, the solid-state imaging device 52 is provided with, for example, an aluminum wire connection electrode pad 53 around the photoelectric conversion unit 52b on the light receiving surface.

【００３８】固体撮像素子５２を取り付ける回路基板５
１は、パッケージに封止されておらず、固体撮像素子５
２を露出させた状態で、他のＩＣ素子５６，５７ととも
に搭載する構成である。この回路基板５１では、主面に
固体撮像素子５２を接着固定し、かつ固体撮像素子５２
に近接した状態にワイヤ結線用の配線パターン５４を主
面に配設している。この場合、回路基板５１は、固体撮
像素子５２の受光面上の電極パッド５３の表面と配線パ
ターン５４の表面の段差が大きくなっている。なお、Ｉ
Ｃ素子５６，５７は、リード端子５６ａ，５７ａを配線
パターン５４に半田５８によって回路基板５１に固定し
ている。Circuit board 5 on which solid-state image sensor 52 is mounted
1 is a solid-state image sensor 5 that is not sealed in a package.
2 is mounted together with the other IC elements 56 and 57 in a state where it is exposed. In this circuit board 51, a solid-state imaging device 52 is bonded and fixed to the main surface, and
A wiring pattern 54 for wire connection is arranged on the main surface in a state close to the above. In this case, the circuit board 51 has a large step between the surface of the electrode pad 53 on the light receiving surface of the solid-state imaging device 52 and the surface of the wiring pattern 54. Note that I
In the C elements 56 and 57, the lead terminals 56a and 57a are fixed to the circuit board 51 by solder 58 on the wiring pattern 54.

【００３９】結線用のワイヤ５５は、電極パッド５３と
配線パターン５４とを相互に接続するようになってい
る。この際、電極パッド５３のワイヤ接続点および配線
パターン５４のワイヤ接続点はいずれも上を向いている
ため、ワイヤ５５は、相互に接続すべき電極パッド５３
のワイヤ接続点と配線パターン５４のワイヤ接続点とを
含みかつ回路基板５１の主面に対して略垂直な面内で、
途中で２箇所の屈曲部６２，６３を設けて略逆Ｊ字形に
折り返している。また、電極パッド５３のワイヤ接続点
には、電極パッド５３にワイヤ５５を圧着するためにパ
ッド側ワイヤつぶれ部６１が発生する。The connection wires 55 connect the electrode pads 53 and the wiring patterns 54 to each other. At this time, since the wire connection points of the electrode pads 53 and the wire connection points of the wiring pattern 54 are both facing upward, the wires 55 are connected to the electrode pads 53 to be connected to each other.
In a plane substantially perpendicular to the main surface of the circuit board 51,
Two bent portions 62 and 63 are provided on the way, and are folded in a substantially inverted J-shape. At the wire connection point of the electrode pad 53, a pad-side wire crushing portion 61 is generated to press the wire 55 to the electrode pad 53.

【００４０】なお、固体撮像素子５２等を搭載した後、
回路基板５１に対して、ダスト除去のために有機溶剤に
よる洗浄・乾燥工程が実施される。以下、上記のように
構成された固体撮像装置で、ワイヤ結線する時の手順と
ワイヤの形状について説明する。図３において、まず固
体撮像素子５２の受光面上の光電変換部５２ｂの周辺に
設けられた電極パッド５３にワイヤ５５を結線するため
に、ワイヤ５５が電極パッド５３に圧着され、パット側
ワイヤつぶれ部６１が形成される。つづいて、電極パッ
ド５３に接続されたワイヤ５５は、電極パッド５３のワ
イヤ接続点に対し略垂直上方向へ引き出され、電極パッ
ド５３のワイヤ接続点の略真上位置で略９０度の屈曲部
６２が形成され、そこからインナーリード５４のワイヤ
接続点の上方位置に向かってワイヤ５５が略水平方向に
引き出され、さらにインナーリード５４のワイヤ接続点
の上方位置で９０度より大きい鈍角的な屈曲部６３が形
成され、そこからワイヤ５５が下方向に引き出され、イ
ンナーリード５４側へ導かれる。そして、配線パターン
５４側へ導かれてきたワイヤ５５は、配線パターン５４
へ圧着される。After mounting the solid-state imaging device 52 and the like,
The circuit board 51 is subjected to a washing / drying step using an organic solvent to remove dust. Hereinafter, a description will be given of a procedure for connecting wires and a shape of the wires in the solid-state imaging device configured as described above. In FIG. 3, first, in order to connect the wire 55 to the electrode pad 53 provided around the photoelectric conversion unit 52 b on the light receiving surface of the solid-state imaging device 52, the wire 55 is crimped to the electrode pad 53, and the pad-side wire collapses. A part 61 is formed. Subsequently, the wire 55 connected to the electrode pad 53 is pulled out in a substantially vertical upward direction with respect to the wire connection point of the electrode pad 53, and a bent portion of approximately 90 degrees is provided at a position almost directly above the wire connection point of the electrode pad 53. 62 is formed, from which the wire 55 is pulled out in a substantially horizontal direction toward a position above the wire connection point of the inner lead 54, and further, an obtuse angle bend greater than 90 degrees at a position above the wire connection point of the inner lead 54. A portion 63 is formed, from which the wire 55 is pulled out downward and guided to the inner lead 54 side. The wire 55 guided to the wiring pattern 54 side is
Crimped to

【００４１】以上の手順を実施することで、図３に示す
ように、固体撮像素子５２と配線パターン５４がワイヤ
５５によりワイヤ結線された状態となり、かつ段差の大
きさに係わらず固体撮像素子５２のエッジ５２ａとワイ
ヤ５５との間に十分に広い隙間を確保できる。この実施
の形態によれば、電極パッド５３の表面の高さに比べ配
線パターン５４の表面の高さが低い場合で、かつ固体撮
像素子５２と配線パターン５４とが近接している場合に
おいて、ワイヤ５５を介して相互に接続すべき電極パッ
ド５３のワイヤ接続点と配線パターン５４のワイヤ接続
点とを含みかつ回路基板５１の主面に対して略垂直な面
内で、ワイヤ５５を途中で２箇所の屈曲部６２，６３を
設けて略逆Ｊ字形に折り返すので、固体撮像素子５２と
ワイヤ５５とを十分に離隔させること、すなわち両者の
間の隙間を広く保つことができ、固体撮像素子５２の電
極パッド５３と回路基板５１の配線パターン５４とをワ
イヤ５５で結線する場合のワイヤ５５と固体撮像素子５
２のエッジ部５２ｂとの間のショートを防止することが
できる。By performing the above procedure, as shown in FIG. 3, the solid-state imaging device 52 and the wiring pattern 54 are connected by wires 55 by wires 55, and the solid-state imaging device 52 A sufficiently wide gap can be secured between the edge 52a and the wire 55. According to this embodiment, when the height of the surface of the wiring pattern 54 is lower than the height of the surface of the electrode pad 53 and when the solid-state imaging device 52 and the wiring pattern 54 are close to each other, In a plane substantially including the wire connection point of the electrode pad 53 and the wire connection point of the wiring pattern 54 to be connected to each other via the wire 55 and being substantially perpendicular to the main surface of the circuit board 51, the wire 55 is Since the bent portions 62 and 63 are provided and folded in a substantially inverted J-shape, the solid-state imaging device 52 and the wire 55 can be sufficiently separated, that is, the gap between them can be kept wide, and the solid-state imaging device 52 can be maintained. 55 and the solid-state imaging device 5 when connecting the electrode pad 53 of FIG.
A short circuit between the second edge portion 52b and the second edge portion 52b can be prevented.

【００４２】しかも、ワイヤ５５と固体撮像素子５２の
エッジ部５２ｂとの間のショートを防止するために、固
体撮像素子５２の電極パッド５３からそれに最も近いワ
イヤ５５の屈曲部６２までの寸法を大きくする必要はな
いので、外部入射光のワイヤ５５による不要な反射光が
固体撮像素子５２の光電変換部５２ｂへ入って疑似信号
が発生するのを防止できる。Further, in order to prevent a short circuit between the wire 55 and the edge portion 52b of the solid-state image sensor 52, the dimension from the electrode pad 53 of the solid-state image sensor 52 to the bent portion 62 of the wire 55 closest to the electrode pad 53 is increased. Therefore, it is possible to prevent unnecessary reflected light of the external incident light from the wire 55 from entering the photoelectric conversion unit 52b of the solid-state imaging device 52 and generating a pseudo signal.

【００４３】さらに、固体撮像素子５２とワイヤ５５と
を十分に離隔させることができることから、ダスト除去
のために有機溶剤による洗浄およびその乾燥を行うとき
に、固体撮像素子５２とワイヤ５５と間にダストを含む
有機溶剤が残ることがなくなるので、乾燥工程の最後に
ダストを含む有機溶剤が画素部に広がるのを防止でき、
その結果画素部にダストが付着して固体撮像素子５２の
画像にしみ状のパターンとして現れるのを防止すること
ができる。Further, since the solid-state image sensing element 52 and the wire 55 can be sufficiently separated from each other, when cleaning with an organic solvent for removing dust and drying thereof are performed, the space between the solid-state image sensing element 52 and the wire 55 is reduced. Since the organic solvent containing dust does not remain, it is possible to prevent the organic solvent containing dust from spreading to the pixel portion at the end of the drying process,
As a result, it is possible to prevent dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device 52.

【００４４】なお、上記第１および第２の実施の形態で
は２箇所の屈曲部を設けた例について説明したが、屈曲
部が３箇所以上あってもよいのは当然である。また、ワ
イヤを接続する際に、最初に電極パッドに接続し、その
後インナーリードまたは回路パターンに接続したが、そ
の逆であってもよい。In the first and second embodiments, an example in which two bent portions are provided has been described. However, it is obvious that three or more bent portions may be provided. Further, when connecting the wires, the wires are first connected to the electrode pads and then to the inner leads or the circuit pattern, but the reverse is also possible.

【００４５】[0045]

【発明の効果】本発明の固体撮像装置およびその製造方
法によれば、ワイヤを少なくとも２箇所で屈曲させるの
で、固体撮像素子の電極パッドとパッケージのインナー
リードもしくは回路基板の配線パターンとの間に固体撮
像素子の電極パッドの方が高い段差が存在し、かつ電極
パッドとインナーリードもしくは配線パターンが近接し
ている場合において、固体撮像素子の電極パッドとパッ
ケージのインナーリードもしく回路基板の配線パターン
とをワイヤで結線する場合のワイヤと固体撮像素子との
間のショートを防止することができるとともに、外部入
射光のワイヤによる不要な反射光が固体撮像素子の光電
変換部へ入って疑似信号が発生するのを防止できる。According to the solid-state imaging device and the method of manufacturing the same of the present invention, since the wire is bent at at least two places, the wire is bent between the electrode pad of the solid-state imaging device and the inner lead of the package or the wiring pattern of the circuit board. When the electrode pad of the solid-state image sensor has a higher step and the electrode pad and the inner lead or the wiring pattern are close to each other, the electrode pad of the solid-state image sensor and the inner lead of the package or the wiring pattern of the circuit board are used. Short circuit between the wire and the solid-state image sensor when the wire is connected to the solid-state image sensor, unnecessary reflected light from the wire of external incident light enters the photoelectric conversion unit of the solid-state image sensor, and a pseudo signal is generated. It can be prevented from occurring.

【００４６】さらに、固体撮像素子とワイヤとを十分に
離隔させることができることから、ダスト除去のために
有機溶剤による洗浄およびその乾燥を行うときに、固体
撮像素子とワイヤと間にダストを含む有機溶剤が残るこ
とがなくなるので、乾燥工程の最後にダストを含む有機
溶剤が画素部に広がるのを防止でき、その結果画素部に
ダストが付着して固体撮像素子の画像にしみ状のパター
ンとして現れるのを防止することができる。Further, since the solid-state imaging device and the wire can be sufficiently separated from each other, when cleaning with an organic solvent for removing dust and drying thereof are performed, an organic material containing dust between the solid-state imaging device and the wire is removed. Since the solvent does not remain, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, and as a result, the dust adheres to the pixel portion and appears as a stain-like pattern on the image of the solid-state imaging device. Can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施の形態の固体撮像装置にお
けるワイヤ結線作業終了後の状態を示す断面模式図であ
る。FIG. 1 is a schematic cross-sectional view showing a state after completion of a wire connection operation in a solid-state imaging device according to a first embodiment of the present invention.

【図２】本発明の第１の実施の形態における固体撮像装
置のワイヤ結線部の拡大断面模式図である。FIG. 2 is an enlarged schematic cross-sectional view of a wire connection portion of the solid-state imaging device according to the first embodiment of the present invention.

【図３】本発明の第２の実施の形態の固体撮像装置にお
けるワイヤ結線作業終了後の状態を示す側面模式図であ
る。FIG. 3 is a schematic side view showing a state after completion of a wire connection operation in a solid-state imaging device according to a second embodiment of the present invention.

【図４】従来例の固体撮像装置におけるワイヤ結線作業
終了後の状態を示す断面模式図である。FIG. 4 is a schematic cross-sectional view showing a state after completion of a wire connection operation in a conventional solid-state imaging device.

【図５】従来例の固体撮像装置におけるワイヤ結線部の
拡大断面模式図である。FIG. 5 is an enlarged schematic cross-sectional view of a wire connection part in a conventional solid-state imaging device.

【符号の説明】[Explanation of symbols]

１１ パッケージ １２ 固体撮像素子 １３ 電極パッド １４ インナーリード １５ ワイヤ ２１ パッド側ワイヤつぶれ部 ２２ 第１の屈曲部 ２３ 第２の屈曲部 ２４ リード側ワイヤつぶれ部 ３１ パッケージ ３２ 固体撮像素子 ３３ 電極パッド ３４ インナーリード ３５ ワイヤ ４１ パッド側ワイヤつぶれ部 ４２ 屈曲部 ４３ リード側ワイヤつぶれ部 ５１ パッケージ ５２ 固体撮像素子 ５３ 電極パッド ５４ インナーリード ５５ ワイヤ ６１ パッド側ワイヤつぶれ部 ６２ 第１の屈曲部 ６３ 第２の屈曲部 ６４ リード側ワイヤつぶれ部 DESCRIPTION OF SYMBOLS 11 Package 12 Solid-state image sensor 13 Electrode pad 14 Inner lead 15 Wire 21 Pad side wire collapse part 22 First bent part 23 Second bent part 24 Lead side wire collapse part 31 Package 32 Solid-state image sensor 33 Electrode pad 34 Inner lead Reference Signs List 35 wire 41 pad-side wire crushed part 42 bent part 43 lead-side wire crushed part 51 package 52 solid-state imaging device 53 electrode pad 54 inner lead 55 wire 61 pad-side wire crushed part 62 first bent part 63 second bent part 64 Lead side wire collapse

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 受光面上の光電変換部の周辺に電極パッ
ドを設けた固体撮像素子と、内底面に前記固体撮像素子
が固定されかつ前記固体撮像素子に近接した状態にイン
ナーリードが前記内底面に配設されたパッケージと、前
記電極パッドと前記インナーリードとを相互に接続する
ワイヤとを備え、 前記ワイヤを介して相互に接続すべき前記電極パッドの
ワイヤ接続点と前記インナーリードのワイヤ接続点とを
含みかつ前記パッケージの内底面に対して略垂直な面内
で、前記ワイヤを途中で少なくとも２箇所の屈曲部を設
けて折り返したことを特徴とする固体撮像装置。1. A solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light receiving surface, and an inner lead fixed to an inner bottom surface of the solid-state imaging device and having an inner lead close to the solid-state imaging device. A package disposed on the bottom surface, a wire for interconnecting the electrode pad and the inner lead, and a wire connection point of the electrode pad to be interconnected via the wire and a wire of the inner lead A solid-state imaging device comprising: a connecting point; and at least two bent portions provided on the wire in a plane substantially perpendicular to an inner bottom surface of the package. 【請求項２】 受光面上の光電変換部の周辺に電極パッ
ドを設けた固体撮像素子と、主面に前記固体撮像素子が
固定されかつ前記固体撮像素子に近接した状態に配線パ
ターンが前記主面に配設された回路基板と、前記電極パ
ッドと前記配線パターンとを相互に接続するワイヤとを
備え、前記ワイヤを介して相互に接続すべき前記電極パ
ッドのワイヤ接続点と前記配線パターンのワイヤ接続点
とを含みかつ前記回路基板の主面に対して略垂直な面内
で、前記ワイヤを途中で少なくとも２箇所の屈曲部を設
けて折り返したことを特徴とする固体撮像装置。2. A solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light-receiving surface, and a wiring pattern in which the solid-state imaging device is fixed to a main surface and close to the solid-state imaging device. A circuit board disposed on a surface thereof, and a wire for interconnecting the electrode pad and the wiring pattern, wherein a wire connection point of the electrode pad to be interconnected via the wire and the wiring pattern A solid-state imaging device comprising: a wire connecting point; and a wire which is provided with at least two bent portions in the middle thereof and turned in a plane substantially perpendicular to the main surface of the circuit board. 【請求項３】 受光面上の光電変換部の周辺に電極パッ
ドを設けた固体撮像素子と、内底面に前記固体撮像素子
が固定されかつ前記固体撮像素子に近接した状態にイン
ナーリードが前記内底面に配設されたパッケージと、前
記電極パッドと前記インナーリードとを相互に接続する
ワイヤとを備え、前記ワイヤを介して相互に接続すべき
前記電極パッドのワイヤ接続点と前記インナーリードの
ワイヤ接続点とを含みかつ前記パッケージの内底面に対
して略垂直な面内で、前記ワイヤを途中で２箇所の屈曲
部を設けて折り返した固体撮像装置を製造する固体撮像
装置の製造方法であって、 前記電極パッドのワイヤ接続点と前記インナーリードの
ワイヤ接続点の一方に前記ワイヤの一端を圧着した後前
記ワイヤを上方向に引き出し、前記電極パッドのワイヤ
接続点と前記インナーリードのワイヤ接続点の一方の上
方位置から前記ワイヤを前記電極パッドのワイヤ接続点
と前記インナーリードのワイヤ接続点の他方の上方位置
に向かって横方向に引き出し、つづいて前記ワイヤを下
方向に引き出して前記ワイヤの他端を前記前記電極パッ
ドのワイヤ接続点と前記インナーリードのワイヤ接続点
の他方に圧着することを特徴とする固体撮像装置の製造
方法。3. A solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light receiving surface, and an inner lead fixed to the inner bottom surface and having an inner lead in a state close to the solid-state imaging device. A package disposed on the bottom surface, a wire for interconnecting the electrode pad and the inner lead, and a wire connection point of the electrode pad to be interconnected via the wire and a wire of the inner lead A solid-state imaging device manufacturing method for manufacturing a solid-state imaging device in which the wire is provided with two bent portions in the middle and folded back in a plane including a connection point and substantially perpendicular to an inner bottom surface of the package. Then, after crimping one end of the wire to one of the wire connection point of the electrode pad and the wire connection point of the inner lead, pull out the wire upward, Pulling out the wire laterally from a position above one of the wire connection point and the wire connection point of the inner lead toward the other upper position of the wire connection point of the electrode pad and the wire connection point of the inner lead, A method of manufacturing the solid-state imaging device, wherein the wire is pulled downward and the other end of the wire is crimped to the other of the wire connection point of the electrode pad and the wire connection point of the inner lead. 【請求項４】 受光面上の光電変換部の周辺に電極パッ
ドを設けた固体撮像素子と、主面に前記固体撮像素子が
固定されかつ前記固体撮像素子に近接した状態に配線パ
ターンが前記主面に配設された回路基板と、前記電極パ
ッドと前記配線パターンとを相互に接続するワイヤとを
備え、前記ワイヤを介して相互に接続すべき前記電極パ
ッドのワイヤ接続点と前記配線パターンのワイヤ接続点
とを含みかつ前記回路基板の主面に対して略垂直な面内
で、前記ワイヤを途中で２箇所の屈曲部を設けて折り返
した固体撮像装置を製造する固体撮像装置の製造方法で
あって、 前記電極パッドのワイヤ接続点と前記配線パターンのワ
イヤ接続点の一方に前記ワイヤの一端を圧着した後前記
ワイヤを上方向に引き出し、前記電極パッドのワイヤ接
続点と前記配線パターンのワイヤ接続点の一方の上方位
置から前記ワイヤを前記電極パッドのワイヤ接続点と前
記配線パターンのワイヤ接続点の他方の上方位置に向か
って横方向に引き出し、つづいて前記ワイヤを下方向に
引き出して前記ワイヤの他端を前記前記電極パッドのワ
イヤ接続点と前記配線パターンのワイヤ接続点の他方に
圧着することを特徴とする固体撮像装置の製造方法。4. A solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light receiving surface, and a wiring pattern in which the solid-state imaging device is fixed to a main surface and is close to the solid-state imaging device. A circuit board disposed on a surface thereof, and a wire for interconnecting the electrode pad and the wiring pattern, wherein a wire connection point of the electrode pad to be interconnected via the wire and the wiring pattern A method for manufacturing a solid-state imaging device for manufacturing a solid-state imaging device in which a wire is provided with two bent portions in the middle and turned back in a plane including a wire connection point and substantially perpendicular to the main surface of the circuit board And after crimping one end of the wire to one of the wire connection point of the electrode pad and the wire connection point of the wiring pattern, pulling the wire upward, The wire is laterally pulled out from one upper position of the wire connection point of the wiring pattern toward the wire connection point of the electrode pad and the other upper position of the wire connection point of the wiring pattern, and then the wire is pulled downward. And crimping the other end of the wire to the other of the wire connection point of the electrode pad and the wire connection point of the wiring pattern.
JP8307793A 1996-11-19 1996-11-19 Solid-state image sensing device and its manufacture Pending JPH10150178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8307793A JPH10150178A (en) 1996-11-19 1996-11-19 Solid-state image sensing device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8307793A JPH10150178A (en) 1996-11-19 1996-11-19 Solid-state image sensing device and its manufacture

Publications (1)

Publication Number Publication Date
JPH10150178A true JPH10150178A (en) 1998-06-02

Family

ID=17973314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8307793A Pending JPH10150178A (en) 1996-11-19 1996-11-19 Solid-state image sensing device and its manufacture

Country Status (1)

Country Link
JP (1) JPH10150178A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100438087C (en) * 2005-05-08 2008-11-26 日月光半导体制造股份有限公司 Photoelectric element package process
CN102646686A (en) * 2011-02-18 2012-08-22 索尼公司 Semiconductor apparatus, manufacturing apparatus, and manufacturing method
US8809145B2 (en) 2010-03-02 2014-08-19 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
CN110798975A (en) * 2019-10-22 2020-02-14 江门市华浦照明有限公司 Surface-mounted device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100438087C (en) * 2005-05-08 2008-11-26 日月光半导体制造股份有限公司 Photoelectric element package process
US8809145B2 (en) 2010-03-02 2014-08-19 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
CN102646686A (en) * 2011-02-18 2012-08-22 索尼公司 Semiconductor apparatus, manufacturing apparatus, and manufacturing method
JP2012174800A (en) * 2011-02-18 2012-09-10 Sony Corp Semiconductor device, manufacturing apparatus and manufacturing method
CN110798975A (en) * 2019-10-22 2020-02-14 江门市华浦照明有限公司 Surface-mounted device
CN110798975B (en) * 2019-10-22 2024-05-07 江门市华浦照明有限公司 Surface-mounted device

Similar Documents

Publication Publication Date Title
KR101031394B1 (en) Optical sensor package
US5773323A (en) Package for solid state image sensing device and method for manufacturing thereof
US7067413B2 (en) Wire bonding method, semiconductor chip, and semiconductor package
US8088650B2 (en) Method of fabricating chip package
JP2002118207A (en) Semiconductor package and method for manufacturing the same
JPH0685222A (en) Solid-state image sensing device
JPH11312706A (en) Resin encapsulating semiconductor device and its manufacture, and lead frame
JP3893624B2 (en) Semiconductor device substrate, lead frame, semiconductor device and manufacturing method thereof, circuit board, and electronic apparatus
JPH10150178A (en) Solid-state image sensing device and its manufacture
JP2005064076A (en) Circuit device
US7446400B2 (en) Chip package structure and fabricating method thereof
JP2003197846A (en) Lead frame and semiconductor device using the same
JPH0783035B2 (en) Semiconductor device
JPH05267629A (en) Solid-state image sensing device
KR20020085120A (en) Module package of image capturing unit
JP4767115B2 (en) Semiconductor device and manufacturing method thereof
JP2002076234A (en) Resin-sealed semiconductor device
JP2004140169A (en) Packaged semiconductor device
JP5574667B2 (en) Package, semiconductor device, manufacturing method and equipment thereof
KR100197876B1 (en) Semiconductor package and method of manufacturing the same
TWI248184B (en) High frequency semiconductor device, method for fabricating the same and lead frame thereof
JP3439890B2 (en) Semiconductor device and manufacturing method thereof
JPH02216839A (en) Semiconductor device
JP2002016210A (en) Semiconductor device
KR100199854B1 (en) Leadframes for chip scale package and chip scale package using them