JPH10135174A - Single tank cleaning apparatus and method of cleaning semiconductor substrate - Google Patents
Single tank cleaning apparatus and method of cleaning semiconductor substrateInfo
- Publication number
- JPH10135174A JPH10135174A JP28367996A JP28367996A JPH10135174A JP H10135174 A JPH10135174 A JP H10135174A JP 28367996 A JP28367996 A JP 28367996A JP 28367996 A JP28367996 A JP 28367996A JP H10135174 A JPH10135174 A JP H10135174A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- tank
- cleaning liquid
- semiconductor substrate
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体基板の単槽
式洗浄装置及び洗浄方法に関し、更に詳細には、半導体
装置製造過程の半導体基板洗浄工程で半導体基板を高い
洗浄効果で洗浄できる単槽式洗浄装置及び単槽式洗浄装
置を使用した洗浄方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-tank type cleaning apparatus and method for a semiconductor substrate, and more particularly, to a single-tank type cleaning apparatus capable of cleaning a semiconductor substrate in a semiconductor substrate cleaning step in a semiconductor device manufacturing process. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method using a single-wafer cleaning apparatus and a single-bath cleaning apparatus.
【０００２】[0002]
【従来の技術】シリコン半導体デバイスの微細化と高集
積化に伴い、半導体装置の製造プロセスで半導体基板に
付着したパーティクル（微小粒子）、汚染金属などが、
半導体装置の製品歩留まりを低下させたり、デバイス特
性にとって好ましくない影響を与えたりする傾向が益々
強くなっている。例えば、パーティクルは酸化膜耐圧不
良、配線短絡、接続不良等を引き起こし、金属汚染は酸
化膜耐圧不良やリーク電流の増大等を引き起こす。とこ
ろで、パーティクルや金属不純物はＬＳＩ等の半導体装
置の製造プロセスの殆どの工程で発生することから、デ
バイスの歩留まりやその特性を向上させるためには、各
製造プロセスが終了するたびに半導体基板を洗浄し、基
板表面を清浄に保つようにしなければならない。そこ
で、従来、洗浄槽を備えた洗浄装置を使用し、その洗浄
槽内の洗浄液に半導体基板を浸漬して洗浄して来た。従
来の半導体基板の洗浄装置は、大別して、（１）洗浄槽
の上部が気体雰囲気に開放された１個の洗浄槽で半導体
基板を洗浄するようにした開放型単槽式洗浄装置、
（２）洗浄槽の上部が気体雰囲気に開放された複数個の
洗浄槽で半導体基板を洗浄するようにした開放型多槽式
洗浄装置、（３）密閉式で内部が液体で満たされた１個
の洗浄槽で半導体基板を洗浄するようにした密閉型単槽
式洗浄装置に分類できる。2. Description of the Related Art With the miniaturization and high integration of silicon semiconductor devices, particles (fine particles), contaminant metals, etc. attached to a semiconductor substrate in a semiconductor device manufacturing process are reduced.
There is an increasing tendency to lower the product yield of semiconductor devices and adversely affect device characteristics. For example, particles cause oxide film breakdown voltage failure, wiring short circuit, connection failure, and the like, and metal contamination causes oxide film breakdown voltage failure and an increase in leak current. By the way, since particles and metal impurities are generated in most steps of a manufacturing process of a semiconductor device such as an LSI, in order to improve a device yield and its characteristics, a semiconductor substrate is cleaned every time each manufacturing process is completed. And the substrate surface must be kept clean. Therefore, conventionally, a semiconductor device has been cleaned by immersing the semiconductor substrate in a cleaning liquid in the cleaning tank using a cleaning apparatus having a cleaning tank. Conventional semiconductor substrate cleaning apparatuses are roughly classified into (1) an open-type single-tank type cleaning apparatus in which the semiconductor substrate is cleaned in one cleaning tank whose upper part is opened to a gas atmosphere;
(2) An open-type multi-tank type cleaning apparatus in which a semiconductor substrate is cleaned in a plurality of cleaning tanks in which the upper part of the cleaning tank is opened to a gaseous atmosphere. It can be classified as a closed type single-tank type cleaning apparatus in which a semiconductor substrate is cleaned in a single cleaning tank.
【０００３】（１）及び（３）の単槽式洗浄装置を使っ
て半導体基板を洗浄する場合、 １）先ず、半導体基板を配置した洗浄槽に純水を導入
し、洗浄槽を純水で満たす。 ２）続いて、洗浄液Ａを洗浄槽に供給し、洗浄液Ａの濃
度が所定濃度に達した時点で、洗浄液Ａの供給を停止
し、洗浄槽内で洗浄液Ａによる洗浄処理を半導体基板に
施す。 ３）洗浄液Ａの洗浄処理が終了後、純水を導入し、洗浄
液Ａを純水で置換しつつ、純水により半導体基板にリン
ス処理を施す。 ４）次いで、洗浄液Ｂを洗浄槽に供給し、洗浄液Ｂの濃
度が所定濃度に達した時点で、洗浄液Ｂの供給を停止
し、洗浄槽内で洗浄液Ｂによる洗浄処理を半導体基板に
施す。 ５）以下、洗浄液の種類数に応じて、３）及び４）を繰
り返す。When cleaning a semiconductor substrate using the single-tank type cleaning apparatus of (1) and (3), 1) First, pure water is introduced into the cleaning tank in which the semiconductor substrate is arranged, and the cleaning tank is filled with pure water. Fulfill. 2) Subsequently, the cleaning liquid A is supplied to the cleaning tank, and when the concentration of the cleaning liquid A reaches a predetermined concentration, the supply of the cleaning liquid A is stopped, and the semiconductor substrate is subjected to a cleaning process using the cleaning liquid A in the cleaning tank. 3) After the cleaning of the cleaning liquid A is completed, pure water is introduced, and the semiconductor substrate is rinsed with pure water while replacing the cleaning liquid A with pure water. 4) Next, the cleaning liquid B is supplied to the cleaning tank, and when the concentration of the cleaning liquid B reaches a predetermined concentration, the supply of the cleaning liquid B is stopped, and the semiconductor substrate is subjected to a cleaning process using the cleaning liquid B in the cleaning tank. 5) Thereafter, 3) and 4) are repeated according to the number of types of the cleaning liquid.
【０００４】[0004]
【発明が解決しようとする課題】（１）や（３）のよう
な単槽式洗浄装置は、多槽式洗浄装置に比べて装置自体
が比較的小型で済むためにクリーンルーム内の専有面積
は小さいものの、上述の２）工程のように、洗浄液を満
たした洗浄槽内に半導体基板を浸漬させただけの状態で
洗浄しているので、洗浄効果が低いという問題があっ
た。洗浄液処理中、洗浄液を循環させることができれ
ば、洗浄槽内に槽流（半導体基板に対する槽内の洗浄液
の流れを言う）が発生し、高い洗浄効果を得ることがで
きるが、複数種の洗浄液を順次使用して洗浄する場合、
従来の洗浄装置で洗浄液を循環させると、どうしても洗
浄液の混触が生じるために、洗浄液を循環して洗浄槽内
に槽流を発生させることができなかった。また、洗浄槽
に洗浄液を連続的に流入出させて、洗浄槽内に槽流を発
生させることもできるが、洗浄液が使い捨てになり、洗
浄液の消費量が増加して不経済になる。そこで、従来の
単槽式洗浄装置では、洗浄槽内の洗浄液が所定濃度にな
ると、上述のように、洗浄液の供給を停止し、静止状態
の洗浄液に半導体基板をただ浸漬させた程度の洗浄を行
わざるを得なかった。そのために、洗浄効果が低くなる
のである。The single-tank type cleaning apparatus as described in (1) and (3) requires a relatively small size as compared with the multi-tank type cleaning apparatus, and therefore requires only a small area in the clean room. Although small, as in the above step 2), the semiconductor substrate is cleaned only by immersing the semiconductor substrate in the cleaning tank filled with the cleaning liquid, and thus there is a problem that the cleaning effect is low. If the cleaning liquid can be circulated during the cleaning liquid processing, a tank flow (refers to the flow of the cleaning liquid in the tank with respect to the semiconductor substrate) is generated in the cleaning tank, and a high cleaning effect can be obtained. When washing by using sequentially
When the cleaning liquid is circulated by the conventional cleaning apparatus, the cleaning liquid cannot be circulated and a tank flow cannot be generated in the cleaning tank because the cleaning liquid inevitably comes into contact with the cleaning liquid. Further, the cleaning liquid can be continuously flowed into and out of the cleaning tank to generate a tank flow in the cleaning tank. However, the cleaning liquid is disposable, and the consumption of the cleaning liquid increases, which is uneconomical. Therefore, in the conventional single-tank type cleaning apparatus, when the cleaning liquid in the cleaning tank reaches a predetermined concentration, as described above, the supply of the cleaning liquid is stopped, and the cleaning is performed to the extent that the semiconductor substrate is simply immersed in the stationary cleaning liquid. I had to do it. Therefore, the cleaning effect is reduced.
【０００５】一方、（２）のような多槽式洗浄装置は、
１種類の洗浄液に対して１個の洗浄槽を割り当てている
ので、洗浄処理中の洗浄液の循環は容易であり、洗浄槽
内に槽流が発生していて、洗浄効果は高いものの、複数
個の洗浄槽を必要とするために装置規模が大きくなり、
専有面積が大きくなって、クリーンルームの設備費が嵩
むという問題があった。また、従来の洗浄槽でも、槽内
に整流板を設置することにより、槽内の流れを一方向流
かつ一様流に近付け、基板面内の洗浄効果を一様にする
工夫がなされているが、整流板が槽流に対し半導体基板
の上流側又は下流側のいずれかにのみ設置されているた
めに、槽内に乱流が少なからず生じ、基板面内の洗浄効
果を均一にすることが難しいという問題もあった。On the other hand, a multi-tank type washing apparatus as in (2)
Since one cleaning tank is assigned to one type of cleaning liquid, circulation of the cleaning liquid during the cleaning process is easy, and a tank flow is generated in the cleaning tank. The equipment scale becomes large because the cleaning tank of
There is a problem that the occupied area becomes large and the equipment cost of the clean room increases. Also, in a conventional cleaning tank, a flow in the tank is made closer to a one-way flow and a uniform flow by installing a flow straightening plate in the tank, and a device for making the cleaning effect in the substrate surface uniform has been made. However, since the rectifying plate is installed only on the upstream side or the downstream side of the semiconductor substrate with respect to the tank flow, turbulence occurs in the tank, and the cleaning effect in the substrate surface is made uniform. There was also a problem that was difficult.
【０００６】以上のような従来の洗浄装置の問題に照ら
して、本発明の目的は、洗浄効果が高く、洗浄効果が半
導体基板面内で一様になる、半導体基板の単槽式洗浄装
置を提供することである。In view of the above-mentioned problems of the conventional cleaning apparatus, an object of the present invention is to provide a single-tank type cleaning apparatus for a semiconductor substrate, which has a high cleaning effect and a uniform cleaning effect in the surface of the semiconductor substrate. To provide.
【０００７】[0007]
【課題を解決するための手段】本発明者は、従来の単槽
式洗浄装置で洗浄液を循環させると、洗浄液の混触が生
じる理由を研究した結果、洗浄液濃度の検出位置が悪い
ことを見い出した。即ち、従来の単槽式洗浄装置では、
洗浄液濃度検出計を洗浄槽に設け、洗浄槽の洗浄液濃度
を検出していたので、洗浄槽が純水で置換された時点
で、洗浄液濃度検出計は洗浄液濃度がゼロである旨の信
号を出力していた。そのため、未だ純水で置換されてい
ない洗浄液が循環配管、循環ポンプ等のなかに残存し、
その残存洗浄液が、次の洗浄液処理工程で洗浄槽に流入
し、混触を引き起こしていたことが判った。そこで、本
発明者は、洗浄液濃度の検出位置を洗浄槽ではなく循環
ポンプ近傍の循環配管に設定して混触の問題を解決する
ことにより、洗浄液の循環を可能とし、かつ整流板を洗
浄槽の上部と下部の２か所に設置して、槽流の速度を速
く、しかも一様にすることにより、洗浄効果と洗浄効果
の基板面内均一性を向上させ、本発明を完成するに到っ
た。SUMMARY OF THE INVENTION The present inventor has studied the reason why the cleaning liquid circulates when the cleaning liquid is circulated in the conventional single-tank type cleaning apparatus, and as a result, found that the detection position of the cleaning liquid concentration was bad. . That is, in the conventional single-tank type cleaning device,
A washing liquid concentration detector was installed in the washing tank to detect the washing liquid concentration in the washing tank.When the washing tank was replaced with pure water, the washing liquid concentration detector outputs a signal indicating that the washing liquid concentration is zero. Was. Therefore, the cleaning liquid not yet replaced with pure water remains in the circulation pipe, the circulation pump, etc.
It was found that the remaining cleaning liquid flowed into the cleaning tank in the next cleaning liquid processing step, causing contact. Therefore, the present inventor has set the detection position of the concentration of the cleaning liquid not in the cleaning tank but in the circulation pipe near the circulation pump to solve the problem of contact, thereby enabling the circulation of the cleaning liquid, and connecting the current plate to the cleaning tank. The cleaning effect and the uniformity of the cleaning effect in the surface of the substrate are improved by installing them at two locations, an upper portion and a lower portion, to increase the velocity of the tank flow and to make the cleaning effect uniform, thereby completing the present invention. Was.
【０００８】上記目的を達成するために、半導体基板の
本発明に係る洗浄装置は、１個の洗浄槽を備え、複数種
類の洗浄処理を行うようにした単槽式洗浄装置におい
て、洗浄槽を経由して洗浄液を循環するように設けた洗
浄液の循環配管と、洗浄液を循環させるように循環配管
に設けた循環ポンプと、循環ポンプの近傍に設けた洗浄
液濃度検出計とを備えていることを特徴としている。In order to achieve the above object, a cleaning apparatus for a semiconductor substrate according to the present invention comprises a single cleaning tank and performs a plurality of types of cleaning processing. A circulation pipe for the cleaning liquid provided to circulate the cleaning liquid via the circulating pump, a circulation pump provided to the circulation pipe to circulate the cleaning liquid, and a cleaning liquid concentration detector provided near the circulation pump. Features.
【０００９】本発明において、洗浄液の循環量は任意で
あって、実験等により設定される。循環ポンプの容量及
び循環配管の寸法は、洗浄液の循環量に基づいて定めら
れる。好適には、洗浄液濃度検出計は循環ポンプの吐出
側配管で洗浄槽に近い位置に設ける。洗浄液濃度検出計
をこの位置に設け、洗浄液濃度がゼロに等しいことを検
出することにより、洗浄槽、循環配管及び循環ポンプ内
の洗浄液を純水で完全に置換できたことを確認すること
ができるので、洗浄液の混触が生じない。In the present invention, the circulating amount of the cleaning liquid is arbitrary, and is set by experiments or the like. The capacity of the circulation pump and the size of the circulation pipe are determined based on the circulation amount of the cleaning liquid. Preferably, the cleaning liquid concentration detector is provided at a position close to the cleaning tank on the discharge side pipe of the circulation pump. By installing a cleaning liquid concentration detector at this position and detecting that the cleaning liquid concentration is equal to zero, it can be confirmed that the cleaning liquid in the cleaning tank, the circulation pipe and the circulation pump has been completely replaced with pure water. Therefore, no contact of the cleaning liquid occurs.
【００１０】本発明の好適な実施態様は、洗浄槽が、複
数個の貫通孔を有し、洗浄槽の下部に水平に配置された
第１の水平整流板と、複数個の貫通孔を有し、第１の水
平整流板から上方に少なくとも半導体基板の直径だけ離
隔して洗浄槽の上部に水平に配置された第２の水平整流
板とを備え、流体の流入口を第１の水平整流板の下方
に、流体の流出口を第２の水平整流板の上方にそれぞれ
有し、第１の水平整流板と第２の水平整流板との間に半
導体基板をほぼ垂直に配置する。第１の水平整流板及び
第２の水平整流板を設けて、洗浄液の流れを垂直方向の
流れに整流し、その流れに平行に半導体基板を配置する
ことにより洗浄効果及び洗浄効果の半導体基板の面内均
一性を向上させることができる。In a preferred embodiment of the present invention, the cleaning tank has a plurality of through holes, a first horizontal rectifying plate disposed horizontally below the cleaning tank, and a plurality of through holes. A second horizontal rectifying plate disposed above the first horizontal rectifying plate at a distance of at least the diameter of the semiconductor substrate and disposed horizontally above the cleaning tank, and the fluid inlet is provided with the first horizontal rectifying plate. A fluid outlet is provided below the plate and above the second horizontal rectifier plate, and the semiconductor substrate is disposed substantially vertically between the first horizontal rectifier plate and the second horizontal rectifier plate. A first horizontal rectifying plate and a second horizontal rectifying plate are provided to rectify the flow of the cleaning liquid into a vertical flow, and the semiconductor substrate is disposed in parallel with the flow to thereby provide a cleaning effect and a cleaning effect of the semiconductor substrate. In-plane uniformity can be improved.
【００１１】上述の半導体基板の単槽式洗浄装置を使用
して、半導体基板を配置した洗浄槽、循環配管及び循環
ポンプに洗浄液を導入する洗浄液導入工程と、洗浄槽、
循環配管及び循環ポンプの循環経路で洗浄液を循環する
循環工程と、洗浄槽に純水を導入して洗浄槽、循環配管
及び循環ポンプの循環経路内の洗浄液を純水で置換しつ
つ排出する純水導入／洗浄液排出工程とを備え、更に、
洗浄液濃度検出計で測定した洗浄液濃度測定値が設定値
になった時点で、再び別の洗浄液を導入する洗浄液導入
工程に入ることにより、半導体基板を効率良く洗浄する
ことができる。また、洗浄液濃度検出計の洗浄液濃度測
定値が設定値になった時点で、所定時間純水を導入しつ
つ排出し続けて、洗浄槽内の半導体基板をリンスするリ
ンス工程を実施することもできる。洗浄液濃度の設定値
は、任意であって、通常、ゼロに近い値に設定する。ま
た、既知の自動制御装置を設けて、上述の工程を自動的
に切り換えて自動洗浄処理を実施することもできる。A cleaning liquid introducing step of introducing a cleaning liquid into a cleaning tank in which a semiconductor substrate is disposed, a circulation pipe and a circulation pump using the single-tank type cleaning apparatus for semiconductor substrates described above;
A circulation step of circulating the cleaning liquid through the circulation path of the circulation pipe and the circulation pump, and a pure water in which pure water is introduced into the cleaning tank and the cleaning liquid in the cleaning tank, the circulation pipe and the circulation path of the circulation pump is replaced with pure water and discharged. A water introduction / washing liquid discharging step,
When the measured value of the concentration of the cleaning liquid measured by the concentration detector for cleaning liquid reaches the set value, the semiconductor substrate can be efficiently cleaned by entering the cleaning liquid introduction step of introducing another cleaning liquid again. Further, when the measured value of the concentration of the cleaning liquid of the cleaning liquid concentration detector reaches a set value, a rinsing step of rinsing the semiconductor substrate in the cleaning tank can be performed by continuously introducing and discharging pure water for a predetermined time. . The set value of the concentration of the washing liquid is arbitrary and is usually set to a value close to zero. In addition, a known automatic control device may be provided to automatically switch the above-described steps to perform an automatic cleaning process.
【００１２】本発明では、循環ポンプによる洗浄液の循
環作用により、洗浄液処理中にも槽内に液流（槽流）を
生じさせ、効果的な洗浄、すなわちパーティクルの除
去、汚染金属不純物の除去を達成することができる。ま
た、洗浄槽の上部及び下部（槽流に対し半導体基板の上
流及び下流）に設置された水平整流板の作用によって、
循環作用により生じさせた槽流を一方向かつ一様にする
ことにより、洗浄効果及び洗浄効果の面内均一性を向上
させることができる。According to the present invention, the circulation of the cleaning liquid by the circulation pump causes a liquid flow (tank flow) in the tank even during the processing of the cleaning liquid, so that effective cleaning, that is, the removal of particles and the removal of contaminated metal impurities can be achieved. Can be achieved. Also, by the action of horizontal rectifying plates installed above and below the cleaning tank (upstream and downstream of the semiconductor substrate with respect to the tank flow),
The cleaning effect and the in-plane uniformity of the cleaning effect can be improved by making the tank flow generated by the circulation action uniform in one direction.
【００１３】[0013]
【発明の実施の形態】以下に、実施例を挙げ、添付図面
を参照して、本発明の実施の形態を具体的かつ詳細に説
明する。実施例１ 本実施例は、本発明を密閉型単槽式洗浄装置に適用した
実施例であって、図１は本実施例の洗浄装置の構成を示
す模式図である。本実施例の単槽式洗浄装置１０は、図
１に示すように、１個の密閉型洗浄槽１２と、循環ポン
プ１４と、異物を捕捉するフィルタ１６と、三方弁１
８、２０とを備え、洗浄槽１２から、循環ポンプ１４、
フィルタ１６、三方弁１８及び三方弁２０を経て洗浄槽
１２に戻る循環配管２２を備えている。更に、洗浄液濃
度検出計２４が、フィルタ１６と三方弁１８との間の循
環配管２２に設けてある。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. Embodiment 1 This embodiment is an embodiment in which the present invention is applied to a closed-type single-tank type cleaning apparatus, and FIG. 1 is a schematic diagram showing a configuration of the cleaning apparatus of the present embodiment. As shown in FIG. 1, the single-tank type cleaning apparatus 10 of this embodiment includes one closed-type cleaning tank 12, a circulation pump 14, a filter 16 for trapping foreign matter, and a three-way valve 1.
8 and 20, and the circulation pump 14,
A circulation pipe 22 that returns to the cleaning tank 12 via the filter 16, the three-way valve 18, and the three-way valve 20 is provided. Further, a washing liquid concentration detector 24 is provided in the circulation pipe 22 between the filter 16 and the three-way valve 18.
【００１４】洗浄槽１２は、洗浄液又は純水を容器内に
充満するようにした密閉式の容器で形成され、図２に示
すように、洗浄槽１２の上部及び下部には、多数の貫通
孔２５を有する第１の水平整流板２６及び多数の貫通孔
２７を有する第２の水平整流板２８が水平に配置され、
その間に半導体基板Ｗを垂直に配置するように構成され
ている。また、洗浄液及び純水の流出口３０は第１の水
平整流板２６の上方の洗浄槽１２の頂部に、及び流入口
３２は第２の水平整流板２８の下方の洗浄槽１２の底部
に設けられている。The cleaning tank 12 is formed of a sealed container in which a cleaning liquid or pure water is filled in a container. As shown in FIG. A first horizontal straightening plate 26 having a plurality of through-holes 27 and a first horizontal straightening plate 26 having a plurality of through holes 27;
In the meantime, the semiconductor substrate W is arranged vertically. An outlet 30 for the washing liquid and the pure water is provided at the top of the washing tank 12 above the first horizontal straightening plate 26, and an inlet 32 is provided at the bottom of the washing tank 12 below the second horizontal straightening plate 28. Have been.
【００１５】以下に、図１を参照しつつ本洗浄装置１０
の動作及び作用を説明する。なお、三方弁１８のフィル
タ側ポートＡ（黒色）及び三方弁２０の洗浄槽側ポート
Ａ（黒色）は、原則として、常時、開であり、その他の
ポートＢ、Ｃは、Ｎｏで開を、Ｎｃで閉を意味する。図
１に図示の三方弁は、洗浄液の循環時の三方弁１８、２
０の開閉状態を示している。 （１）洗浄液の導入操作 三方弁１８及び２０のポートＢを閉、ポートＣを開にす
る。洗浄液を外部の洗浄液供給源３４から三方弁２０を
経て洗浄槽１２に流入させ、更に循環配管２２を含めて
循環ポンプ１４、フィルタ１６を経て三方弁１８にまで
導入し、必要に応じて外部の流出先３８に洗浄液を一部
排出して、確実に洗浄液が洗浄装置１０内に導入された
ことを確認する。必要に応じて更に、三方弁１８、２０
のポートＡを閉にし、ポートＢ、Ｃを開にして、三方弁
１８、２０の間の循環配管にも洗浄液を導入する。尚、
洗浄液の導入する前の洗浄装置１０は、純水で満たされ
ていても、空でも、どちらでも良い。Hereinafter, the main cleaning apparatus 10 will be described with reference to FIG.
The operation and operation of the above will be described. In addition, the filter side port A (black) of the three-way valve 18 and the washing tank side port A (black) of the three-way valve 20 are always open in principle, and the other ports B and C are opened with No. Nc means closed. The three-way valve shown in FIG.
0 indicates the open / closed state. (1) Introduction operation of cleaning liquid The ports B of the three-way valves 18 and 20 are closed, and the port C is opened. The cleaning liquid flows from the external cleaning liquid supply source 34 into the cleaning tank 12 via the three-way valve 20, and is further introduced to the three-way valve 18 via the circulation pump 14 and the filter 16 including the circulation pipe 22. A part of the cleaning liquid is discharged to the outflow destination 38, and it is confirmed that the cleaning liquid is surely introduced into the cleaning device 10. If necessary, three-way valves 18, 20
Port A is closed, ports B and C are opened, and the cleaning liquid is also introduced into the circulation pipe between the three-way valves 18 and 20. still,
The cleaning device 10 before the introduction of the cleaning liquid may be filled with pure water or may be empty.
【００１６】（２）洗浄液の循環操作 三方弁１８、２０のポートＣを閉にし、ポートＢを開に
して循環経路を確立する。次いで、循環ポンプ１４を起
動して、洗浄槽１２、循環ポンプ１４、三方弁１８、三
方弁２０及び洗浄槽１２の循環経路で洗浄液を循環す
る。 （３）循環の停止及び洗浄液の排出操作 三方弁１８、２０のポートＣを開に、ポートＢを閉にし
て、外部の純水供給源３６から三方弁２０、洗浄槽１
２、循環ポンプ１４、フィルタ１６及び三方弁１８の経
路で純水を導入しつつ、洗浄液濃度検出計２４の洗浄液
濃度測定値がゼロに等しくなるまで、洗浄槽１２、循環
配管２２を含めて循環ポンプ１４、フィルタ１６及び三
方弁１８、２０から洗浄液を外部の排出先３８に排出し
続ける。必要に応じて、三方弁１８、２０のポートＡを
閉にし、ポートＢを開にして三方弁２０と三方弁１８と
の間の配管内の洗浄液を純水で置換する。 （４）第２の洗浄液の導入操作 洗浄液濃度検出計２４の洗浄液濃度測定値がゼロに等し
くなった時点で、再び（１）の操作により、先の洗浄液
とは別の第２の洗浄液を供給する。尚、洗浄液濃度検出
計２４の洗浄液濃度測定値がゼロに等しくなった時点
で、（４）に入る前に（３）の純水導入を継続して、半
導体基板にリンス処理を施すこともできる。(2) Circulating operation of the cleaning liquid The ports C of the three-way valves 18 and 20 are closed and the port B is opened to establish a circulation path. Next, the circulation pump 14 is started, and the cleaning liquid is circulated through the cleaning tank 12, the circulation pump 14, the three-way valve 18, the three-way valve 20, and the circulation path of the cleaning tank 12. (3) Stopping the circulation and discharging the cleaning liquid Open the port C of the three-way valves 18 and 20 and close the port B, and supply the three-way valve 20 and the cleaning tank 1 from the external pure water supply source 36.
2. While introducing pure water through the path of the circulation pump 14, the filter 16 and the three-way valve 18, the circulation is performed including the cleaning tank 12 and the circulation pipe 22 until the measured value of the cleaning solution concentration of the cleaning solution concentration detector 24 becomes equal to zero. The cleaning liquid is continuously discharged from the pump 14, the filter 16, and the three-way valves 18 and 20 to an external discharge destination 38. If necessary, the ports A of the three-way valves 18 and 20 are closed, and the port B is opened to replace the cleaning liquid in the pipe between the three-way valves 20 and 18 with pure water. (4) Second cleaning liquid introduction operation When the cleaning liquid concentration measurement value of the cleaning liquid concentration detector 24 becomes equal to zero, the second cleaning liquid different from the previous cleaning liquid is supplied again by the operation (1). I do. When the measured value of the concentration of the cleaning liquid of the cleaning liquid concentration detector 24 becomes equal to zero, the semiconductor substrate can be rinsed by continuing the introduction of pure water of (3) before entering (4). .
【００１７】本洗浄装置１０では、三方弁１８及び２０
のポートの開閉を切り替え、循環ポンプ１４の運転及び
停止を行うことにより、洗浄液の導入操作、洗浄液の循
環操作及び洗浄液の排出操作を行う。また、洗浄槽１２
内の上部及び下部に第１の水平整流板２６及び第２の水
平整流板２８を設けているので、図２に示すように、洗
浄槽１２内での洗浄液の流れは一方向かつ一様となり、
その流れに平行に半導体基板を配置することにより、洗
浄効果と洗浄効果の面内均一性が向上する。In the present cleaning apparatus 10, the three-way valves 18 and 20
The operation of introducing the cleaning liquid, the operation of circulating the cleaning liquid, and the operation of discharging the cleaning liquid are performed by switching the opening and closing of the port and operating and stopping the circulation pump 14. In addition, the cleaning tank 12
Since the first horizontal rectifying plate 26 and the second horizontal rectifying plate 28 are provided at the upper and lower portions of the inside, the flow of the cleaning liquid in the cleaning tank 12 becomes unidirectional and uniform, as shown in FIG. ,
By arranging the semiconductor substrate in parallel with the flow, the cleaning effect and the in-plane uniformity of the cleaning effect are improved.
【００１８】実施例２ 本実施例は、本発明を開放型単槽式洗浄装置に適用した
実施例であって、図３は本実施例の洗浄装置の構成を示
す模式図である。本実施例の単槽式洗浄装置４０は、図
３に示すように、１個の開放型洗浄槽４２と、循環ポン
プ４４と、フィルタ４６と、三方弁４８、５０とを備
え、洗浄槽４２かから、循環ポンプ４４、フィルタ４
６、三方弁４８及び三方弁５０を経て洗浄槽４２に戻る
循環配管５２を備えている。更に、洗浄液濃度検出計５
４が、フィルタ４６と三方弁４８との間の循環配管５２
に設けてある。 Embodiment 2 This embodiment is an embodiment in which the present invention is applied to an open-type single-tank type cleaning apparatus, and FIG. 3 is a schematic diagram showing a configuration of the cleaning apparatus of the present embodiment. As shown in FIG. 3, the single-tank type cleaning apparatus 40 of this embodiment includes one open-type cleaning tank 42, a circulation pump 44, a filter 46, and three-way valves 48 and 50. From the circulation pump 44 and the filter 4
6, a circulation pipe 52 that returns to the cleaning tank 42 via the three-way valve 48 and the three-way valve 50 is provided. Furthermore, a washing liquid concentration detector 5
4 is a circulation pipe 52 between the filter 46 and the three-way valve 48.
It is provided in.
【００１９】洗浄槽４２は、上部が気体雰囲気に開放さ
れた開放式の容器で形成され、洗浄槽４２の上部及び下
部には、実施例１の洗浄槽１２と同様に、多数の貫通孔
を有する第１の水平整流板５６及び第２の水平整流板５
８が水平に配置され、その間に半導体基板Ｗを垂直に配
置するように構成されている。また、洗浄槽４２の上部
には、第１の水平整流板５６の上に堰板６０が設けてあ
って、洗浄液及び純水は堰板６０をオバーフローして液
溜６２に入る。洗浄液及び純水の流出口６４は、液溜６
２に設けてあり、流入口６６は第２の水平整流板５８の
下方の洗浄槽４２の底部に設けられている。The cleaning tank 42 is formed by an open container whose upper part is open to a gaseous atmosphere, and a plurality of through holes are formed in the upper and lower parts of the cleaning tank 42 in the same manner as in the cleaning tank 12 of the first embodiment. The first horizontal rectifying plate 56 and the second horizontal rectifying plate 5 having
8 are arranged horizontally, and the semiconductor substrate W is arranged vertically between them. A dam plate 60 is provided on the first horizontal rectifying plate 56 above the cleaning tank 42, and the cleaning liquid and pure water overflow the dam plate 60 and enter the liquid reservoir 62. The outlet 64 for the cleaning liquid and the pure water is
2, and the inflow port 66 is provided at the bottom of the cleaning tank 42 below the second horizontal straightening plate 58.
【００２０】以下に、図３を参照しつつ本洗浄装置４０
の動作及び作用を説明する。なお、三方弁４８のフィル
タ側ポートＡ（黒色）及び三方弁５０の洗浄槽側ポート
Ａ（黒色）は、原則として、常時、開であり、その他の
ポートＢ、Ｃは、Ｎｏで開を、Ｎｃで閉を意味する。図
３に図示の三方弁は、洗浄液の循環時の三方弁４８、５
０の開閉状態を示している。 （１）洗浄液の導入操作 三方弁４８及び５０のポートＢを閉、ポートＣを開にす
る。洗浄液を外部の洗浄液供給源６８から三方弁５０を
経て洗浄槽４２に流入させ、更に循環配管５２を含めて
循環ポンプ４４、フィルタ５６を経て三方弁４８にまで
導入し、必要に応じて外部の流出先３８に洗浄液を一部
排出して、確実に洗浄液が洗浄装置１０内に導入された
ことを確認する。必要に応じて更に、三方弁４８、５０
のポートＡを閉にし、ポートＢ、Ｃを開にして、三方弁
４８、５０の間の循環配管にも洗浄液を導入する。尚、
洗浄液の導入する前の洗浄装置４０は、純水で満たされ
ていても、空でも、どちらでも良い。Hereinafter, the main cleaning apparatus 40 will be described with reference to FIG.
The operation and operation of the above will be described. In addition, the filter side port A (black) of the three-way valve 48 and the washing tank side port A (black) of the three-way valve 50 are always open in principle, and the other ports B and C are opened with No. Nc means closed. The three-way valve shown in FIG.
0 indicates the open / closed state. (1) Operation for introducing the cleaning liquid The ports B of the three-way valves 48 and 50 are closed, and the port C is opened. The cleaning liquid flows from the external cleaning liquid supply source 68 into the cleaning tank 42 via the three-way valve 50, and is further introduced into the three-way valve 48 via the circulation pump 44 and the filter 56 including the circulation pipe 52, and if necessary, an external A part of the cleaning liquid is discharged to the outflow destination 38, and it is confirmed that the cleaning liquid is surely introduced into the cleaning device 10. If necessary, three-way valves 48, 50
Port A is closed, ports B and C are opened, and the cleaning liquid is also introduced into the circulation pipe between the three-way valves 48 and 50. still,
The cleaning device 40 before the introduction of the cleaning liquid may be filled with pure water or may be empty.
【００２１】（２）洗浄液の循環操作 三方弁４８、５０のポートＣを閉にし、ポートＢを開に
して循環経路を確立する。次いで、循環ポンプ４４を起
動して、洗浄槽４２、循環ポンプ４４、三方弁４８、三
方弁５０及び洗浄槽４２の循環経路で洗浄液を循環す
る。 （３）循環の停止及び洗浄液の排出操作 三方弁４８、５０のポートＣを開に、ポートＢを閉にし
て、外部の純水供給源７０から三方弁５０、洗浄槽４
２、循環ポンプ４４、フィルタ５６及び三方弁４８の経
路で純水を導入しつつ、洗浄液濃度検出計５４の洗浄液
濃度測定値がゼロに等しくなるまで、洗浄槽４２、循環
配管５２を含めて循環ポンプ４４、フィルタ５６及び三
方弁４８、５０から洗浄液を外部の排出先７２に排出し
続ける。必要に応じて、ポートＡを閉にし、ポートＢを
開にして三方弁５０と三方弁４８との間の配管内の洗浄
液を純水で置換する。 （４）第２の洗浄液の導入操作 洗浄液濃度検出計５４の洗浄液濃度測定値がゼロに等し
くなった時点で、再び（１）の操作により、先の洗浄液
とは別の第２の洗浄液を供給する。尚、洗浄液濃度検出
計５４の洗浄液濃度測定値がゼロに等しくなった時点
で、（４）に入る前に（３）の純水導入を継続して、半
導体基板にリンス処理を施すこともできる。(2) Circulating operation of the cleaning liquid The ports C of the three-way valves 48 and 50 are closed and the port B is opened to establish a circulation path. Next, the circulation pump 44 is started, and the cleaning liquid is circulated in the circulation path of the cleaning tank 42, the circulation pump 44, the three-way valve 48, the three-way valve 50, and the cleaning tank 42. (3) Stopping circulation and discharging the cleaning liquid Open the port C of the three-way valves 48 and 50 and close the port B, and supply the three-way valve 50 and the cleaning tank 4 from the external pure water supply source 70.
2. While introducing pure water through the path of the circulation pump 44, the filter 56, and the three-way valve 48, the circulation is performed including the cleaning tank 42 and the circulation pipe 52 until the measured value of the cleaning liquid concentration of the cleaning liquid concentration detector 54 becomes equal to zero. The cleaning liquid is continuously discharged from the pump 44, the filter 56, and the three-way valves 48 and 50 to an external discharge destination 72. If necessary, the port A is closed and the port B is opened to replace the cleaning liquid in the pipe between the three-way valve 50 and the three-way valve 48 with pure water. (4) Introducing the second cleaning liquid When the measured value of the cleaning liquid concentration of the cleaning liquid concentration detector 54 becomes equal to zero, the second cleaning liquid different from the previous cleaning liquid is supplied again by the operation (1). I do. Incidentally, when the measured value of the concentration of the cleaning liquid of the cleaning liquid concentration detector 54 becomes equal to zero, it is also possible to carry out the rinsing treatment on the semiconductor substrate by continuing the introduction of pure water of (3) before entering (4). .
【００２２】本洗浄装置４０では、三方弁４８及び５０
のポートの開閉を切り替え、循環ポンプ４４の運転、停
止により、洗浄液の供給操作、洗浄液の循環操作及び洗
浄液の排出操作を行う。また、洗浄槽４２内の上部及び
下部に第１の水平整流板５６及び第２の水平整流板５８
を設けているので、実施例１と同様、図２に示すよう
に、洗浄槽４２内での洗浄液の流れは一方向かつ一様と
なり、その流れに平行に半導体基板を配置することによ
り、洗浄効果と洗浄効果の面内均一性が向上する。In the cleaning device 40, the three-way valves 48 and 50
The operation of supplying the cleaning liquid, the operation of circulating the cleaning liquid, and the operation of discharging the cleaning liquid are performed by switching the opening / closing of the port and operating and stopping the circulation pump 44. Also, a first horizontal rectifying plate 56 and a second horizontal rectifying plate 58 are provided on the upper and lower portions in the cleaning tank 42.
As shown in FIG. 2, the flow of the cleaning liquid in the cleaning tank 42 is uniform in one direction and uniform as in the first embodiment, and the cleaning is performed by arranging the semiconductor substrate in parallel with the flow. The in-plane uniformity of the effect and the cleaning effect is improved.
【００２３】[0023]
【発明の効果】本発明の構成によれば、洗浄液濃度検出
計を循環配管に設置して残存洗浄液の有無を確実に認識
して、洗浄液の混触を引き起こさない循環機構を単槽式
洗浄装置に設けることにより、洗浄液処理時に洗浄液の
循環を可能にしている。これにより、槽内に液流（槽
流）が生じるため、半導体基板に付着したパーティクル
や汚染金属を効率良く除去でき、また洗浄液を循環使用
することにより経済的に洗浄できる。また、洗浄槽の上
部及び下部に設けた水平整流板により、槽流が一方向か
つ一様になり、半導体基板の洗浄効果と洗浄効果の面内
均一性を一層向上させることができる。According to the structure of the present invention, a washing tank concentration detector is installed in a circulation pipe to reliably recognize the presence or absence of the remaining washing liquid and to provide a single-tank washing apparatus with a circulation mechanism that does not cause the washing liquid to come into contact. By providing the cleaning liquid, the cleaning liquid can be circulated during the processing of the cleaning liquid. As a result, a liquid flow (tank flow) is generated in the tank, so that particles and contaminant metals attached to the semiconductor substrate can be efficiently removed, and cleaning can be economically performed by circulating the cleaning liquid. Further, the horizontal flow plates provided at the upper and lower portions of the cleaning tank make the flow in the tank uniform in one direction and uniform, so that the cleaning effect of the semiconductor substrate and the in-plane uniformity of the cleaning effect can be further improved.
【図１】本発明に係る半導体基板の単槽式洗浄装置の実
施例１の構成を示す模式図である。FIG. 1 is a schematic diagram showing the configuration of a first embodiment of a single-tank type cleaning apparatus for a semiconductor substrate according to the present invention.
【図２】洗浄槽の構成と槽流の状態を示す洗浄槽の模式
的断面図である。FIG. 2 is a schematic cross-sectional view of the cleaning tank showing a configuration of the cleaning tank and a state of a tank flow.
【図３】本発明に係る半導体基板の単槽式洗浄装置の実
施例２の構成を示す模式図である。FIG. 3 is a schematic view showing a configuration of a second embodiment of a single-tank type cleaning apparatus for a semiconductor substrate according to the present invention.
１０……実施例１の単槽式洗浄装置、１２……密閉型洗
浄槽、１４……循環ポンプ、１６……フィルタ、１８…
…三方弁、２０……三方弁、２２……循環配管、２４…
…洗浄液濃度検出計、２５……貫通孔、２６……第１の
水平整流板、２７……貫通孔、２８……第２の水平整流
板、３０……流出口、３２……流入口、３４……外部の
洗浄液供給源、３６……外部の純水供給源、３８……排
出先、４０……実施例２の単槽式洗浄装置、４２……開
放型洗浄槽、４４……循環ポンプ、４６……フィルタ、
４８……三方弁、５０……三方弁、５２……循環配管、
５４……洗浄液濃度検出計、５６……第１の水平整流
板、５８……第２の水平整流板、６０……堰板、６２…
…液溜、６４……流出口、６６……流入口、６８……外
部の洗浄液供給源、７０……外部の純水供給源、７２…
…外部の排出先。10: Single-tank type washing apparatus of Example 1, 12: Sealed type washing tank, 14: Circulating pump, 16: Filter, 18 ...
... three-way valve, 20 ... three-way valve, 22 ... circulation piping, 24 ...
... cleaning liquid concentration detector, 25 ... through-hole, 26 ... first horizontal straightening plate, 27 ... through-hole, 28 ... second horizontal straightening plate, 30 ... outlet, 32 ... inlet, 34: external cleaning liquid supply source, 36: external pure water supply source, 38: discharge destination, 40: single-tank type cleaning apparatus of the second embodiment, 42: open type cleaning tank, 44: circulation Pump, 46 ... filter,
48 three-way valve, 50 three-way valve, 52 circulation pipe,
54 ... cleaning solution concentration detector, 56 ... first horizontal rectifying plate, 58 ... second horizontal rectifying plate, 60 ... weir plate, 62 ...
.., Liquid reservoir, 64, outlet, 66, inlet, 68, external cleaning liquid supply source, 70, external pure water supply source, 72
… External discharge destination.
Claims (7)
理を行うようにした単槽式洗浄装置において、 洗浄槽を経由して洗浄液を循環するように設けた洗浄液
の循環配管と、 洗浄液を循環させるように循環配管に設けた循環ポンプ
と、 循環ポンプの近傍に設けた洗浄液濃度検出計とを備えて
いることを特徴とする半導体基板の単槽式洗浄装置。1. A single-tank type cleaning apparatus comprising one cleaning tank and performing a plurality of types of cleaning treatments, wherein a cleaning liquid circulation pipe provided to circulate the cleaning liquid via the cleaning tank; A single-tank type cleaning apparatus for a semiconductor substrate, comprising: a circulation pump provided in a circulation pipe so as to circulate a cleaning liquid; and a cleaning liquid concentration detector provided in the vicinity of the circulation pump.
た第１の水平整流板と、 複数個の貫通孔を有し、第１の水平整流板から上方に少
なくとも半導体基板の直径だけ離隔して洗浄槽の上部に
水平に配置された第２の水平整流板とを備え、流体の流
入口を第１の水平整流板の下方に、流体の流出口を第２
の水平整流板の上方にそれぞれ有し、第１の水平整流板
と第２の水平整流板との間に半導体基板をほぼ垂直に配
置するようにしたことを特徴とする請求項１に記載の半
導体基板の単槽式洗浄装置。2. A cleaning tank having a plurality of through holes, a first horizontal rectifying plate disposed horizontally below the cleaning tank, and a plurality of through holes, wherein a first horizontal rectifying plate is provided. A second horizontal rectifying plate horizontally disposed above the cleaning tank at a distance of at least the diameter of the semiconductor substrate above the plate, and a fluid inlet is provided below the first horizontal rectifying plate. Outlet second
2. The semiconductor device according to claim 1, wherein the semiconductor substrate is disposed substantially vertically between the first horizontal rectifying plate and the second horizontal rectifying plate. Single tank cleaning system for semiconductor substrates.
浄液導入管及び排出管を循環配管に設けたことを特徴と
する請求項１又は２に記載の半導体装置の単槽式洗浄装
置。3. The single-tank type cleaning apparatus for a semiconductor device according to claim 1, wherein a pure water introduction pipe, a cleaning liquid introduction pipe, and a discharge pipe each having an on-off valve are provided in the circulation pipe.
請求項１から３のうちのいずれか１項に記載の半導体基
板の洗浄装置。4. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the cleaning tank is of a closed type.
請求項１から３のうちのいずれか１項に記載の半導体基
板の洗浄装置。5. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the cleaning tank is an open type.
記載の半導体基板の単槽式洗浄装置を使用して、半導体
基板を洗浄する方法であって、 半導体基板を配置した洗浄槽、循環配管及び循環ポンプ
に洗浄液を導入する洗浄液導入工程と、 洗浄槽、循環配管及び循環ポンプの循環経路で洗浄液を
循環する循環工程と、 洗浄槽に純水を導入して洗浄槽、循環配管及び循環ポン
プの循環経路内の洗浄液を純水で置換しつつ排出する純
水導入／洗浄液排出工程とを備え、 更に、洗浄液濃度検出計で測定した洗浄液濃度測定値が
設定値になった時点で、再び別の洗浄液を導入する洗浄
液導入工程に入ることを特徴とする半導体基板の洗浄方
法。6. A method for cleaning a semiconductor substrate using the single-substrate cleaning apparatus for a semiconductor substrate according to claim 1, wherein the semiconductor substrate is disposed. , A cleaning liquid introduction step of introducing a cleaning liquid into a circulation pipe and a circulation pump, a circulation step of circulating a cleaning liquid through a circulation path of a cleaning tank, a circulation pipe and a circulation pump, and a cleaning tank and a circulation pipe by introducing pure water into the cleaning tank. And a pure water introduction / cleaning liquid discharge step of discharging the cleaning liquid in the circulation path of the circulation pump while replacing the cleaning liquid with pure water, and further, when the measured value of the cleaning liquid concentration measured by the cleaning liquid concentration detector reaches a set value. And a cleaning liquid introduction step of introducing another cleaning liquid again.
測定値が設定値になった時点で、所定時間純水を導入し
つつ排出し続けて、洗浄槽内の半導体基板を純水でリン
スするリンス工程を備えることを特徴とする請求項６に
記載の半導体基板の洗浄方法。7. When the cleaning solution concentration measured by the cleaning solution concentration detector reaches a set value, the semiconductor substrate in the cleaning tank is rinsed with pure water by continuously introducing and discharging pure water for a predetermined time. The method for cleaning a semiconductor substrate according to claim 6, further comprising a rinsing step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28367996A JPH10135174A (en) | 1996-10-25 | 1996-10-25 | Single tank cleaning apparatus and method of cleaning semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28367996A JPH10135174A (en) | 1996-10-25 | 1996-10-25 | Single tank cleaning apparatus and method of cleaning semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10135174A true JPH10135174A (en) | 1998-05-22 |
Family
ID=17668673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28367996A Pending JPH10135174A (en) | 1996-10-25 | 1996-10-25 | Single tank cleaning apparatus and method of cleaning semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10135174A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012119603A (en) * | 2010-12-03 | 2012-06-21 | Japan Display Central Co Ltd | Substrate processing apparatus |
-
1996
- 1996-10-25 JP JP28367996A patent/JPH10135174A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012119603A (en) * | 2010-12-03 | 2012-06-21 | Japan Display Central Co Ltd | Substrate processing apparatus |
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