JPH10126204A - Thin-film piezoelectric element - Google Patents
Thin-film piezoelectric elementInfo
- Publication number
- JPH10126204A JPH10126204A JP8272297A JP27229796A JPH10126204A JP H10126204 A JPH10126204 A JP H10126204A JP 8272297 A JP8272297 A JP 8272297A JP 27229796 A JP27229796 A JP 27229796A JP H10126204 A JPH10126204 A JP H10126204A
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- Prior art keywords
- thin film
- substrate
- thickness
- electrode layer
- film
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は薄膜圧電素子に係
り、特に、高周波域の弾性波を利用した共振器、フィル
タ等に好適な薄膜圧電素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film piezoelectric element, and more particularly to a thin-film piezoelectric element suitable for a resonator, a filter, and the like utilizing a high-frequency elastic wave.
【０００２】[0002]
【従来の技術】圧電素子用の高周波用圧電材料として
は、例えば、常誘電体の窒化アルミニウム、酸化亜鉛、
或いは、強誘電体のチタン酸鉛等が用いられている。こ
れらの材料は、機械加工により薄く加工したとしても、
４０μｍ程度の厚みが限界であり、この程度の厚みのも
のでは、基本波の共振周波数は、いずれの材料でも数十
ＭＨｚが限界である。これらの材料を用いた高周波用薄
膜圧電素子においては、例えば５００ＭＨｚ以上の高い
共振周波数の基本波を得るためには、素子の厚みを１０
μｍ以下にする必要がある。2. Description of the Related Art As high frequency piezoelectric materials for piezoelectric elements, for example, paraelectric aluminum nitride, zinc oxide,
Alternatively, ferroelectric lead titanate or the like is used. Even if these materials are thinned by machining,
A thickness of about 40 μm is a limit, and a resonance frequency of a fundamental wave of several tens of MHz is a limit for any material having a thickness of about 40 μm. In a high-frequency thin-film piezoelectric element using these materials, for example, in order to obtain a fundamental wave having a high resonance frequency of 500 MHz or more, the thickness of the element must be 10 μm.
It is necessary to be less than μm.
【０００３】圧電材料の薄膜を得る方法としてスパッタ
法が公知であり、特開昭６０−３１３０５号公報には、
スパッタ法で酸化亜鉛及びチタン酸鉛の薄膜を形成した
圧電素子が記載されている。なお、この特開昭６０−３
１３０５号公報に記載される圧電素子は、基板の影響を
なくし、圧電体薄膜の振動特性を活かすために、基板の
一部をエッチングで除去している。[0003] As a method for obtaining a thin film of a piezoelectric material, a sputtering method is known.
A piezoelectric element in which a thin film of zinc oxide and lead titanate is formed by a sputtering method is described. In addition, Japanese Unexamined Patent Application Publication No. Sho 60-3
In the piezoelectric element described in Japanese Patent No. 1305, a part of the substrate is removed by etching in order to eliminate the influence of the substrate and utilize the vibration characteristics of the piezoelectric thin film.
【０００４】[0004]
【発明が解決しようとする課題】窒化アルミニウムや酸
化亜鉛等のスパッタ薄膜よりなる圧電体薄膜は、電気機
械結合係数が２０〜３０％程度と小さいため、共振子、
フィルタ等を構成した場合、帯域幅及び発振周波数範囲
が限定される。なお、特開昭６０−３１３０５号公報で
は、この点を改善するために、基板の一部を除去してい
るが、このように基板を除去した場合、素子強度が低下
するという欠点がある。A piezoelectric thin film made of a sputtered thin film such as aluminum nitride or zinc oxide has a small electromechanical coupling coefficient of about 20 to 30%.
When a filter or the like is configured, the bandwidth and the oscillation frequency range are limited. In Japanese Patent Application Laid-Open No. Sho 60-31305, a part of the substrate is removed in order to improve this point. However, when the substrate is removed in this way, there is a disadvantage that the element strength is reduced.
【０００５】電気機械結合係数の大きい圧電材料として
ＰＺＴ（チタン酸ジルコン酸鉛）があるが、ＰＺＴは、
良質な膜質の圧電体薄膜を得ることが困難である。例え
ば、スパッタ法では、厚み振動の共振を十分確認できる
ほど良好なＰＺＴ薄膜を形成できない。[0005] PZT (lead zirconate titanate) is a piezoelectric material having a large electromechanical coupling coefficient.
It is difficult to obtain a high quality piezoelectric thin film. For example, the sputtering method cannot form a PZT thin film that is good enough to sufficiently confirm thickness vibration resonance.
【０００６】本発明は上記従来の問題点を解決し、電気
機械結合係数が大きく、共振子、フィルタ等に適用した
場合の帯域幅及び発振周波数範囲が広い高周波用薄膜圧
電素子を提供することを目的とする。An object of the present invention is to provide a high-frequency thin film piezoelectric element having a large electromechanical coupling coefficient, a wide bandwidth and a wide oscillation frequency range when applied to a resonator, a filter, etc. Aim.
【０００７】[0007]
【課題を解決するための手段】本発明の薄膜圧電素子
は、酸化膜を有するＳｉ基板と、該Ｓｉ基板の該酸化膜
上に形成された下地電極層と、該下地電極層上にゾルゲ
ル法により形成されたＰＺＴ薄膜と、該ＰＺＴ薄膜上に
形成された上部電極層とを備えてなることを特徴とす
る。According to the present invention, there is provided a thin-film piezoelectric element comprising a Si substrate having an oxide film, a base electrode layer formed on the oxide film of the Si substrate, and a sol-gel method formed on the base electrode layer. And a top electrode layer formed on the PZT thin film.
【０００８】酸化膜付きＳｉ基板へのゾルゲル法による
ＰＺＴ薄膜の成膜であれば、厚み振動に対して高い共振
を示し、圧電体薄膜として有効に機能する良好な膜質の
ＰＺＴ薄膜を形成することができる。In the case of forming a PZT thin film on a silicon substrate with an oxide film by a sol-gel method, a PZT thin film having a good film quality that exhibits high resonance with respect to thickness vibration and effectively functions as a piezoelectric thin film can be formed. Can be.
【０００９】このため、圧電体薄膜として電気機械結合
係数の大きいＰＺＴ薄膜の適用が可能となり、広帯域な
フィルタや発振周波数範囲の広い共振器を実現する薄膜
圧電素子を得ることができる。Therefore, a PZT thin film having a large electromechanical coupling coefficient can be applied as the piezoelectric thin film, and a thin film piezoelectric element realizing a filter having a wide band and a resonator having a wide oscillation frequency range can be obtained.
【００１０】[0010]
【発明の実施の形態】以下に本発明の実施の形態を説明
する。Embodiments of the present invention will be described below.
【００１１】本発明の薄膜圧電素子で用いる基板は、表
面に酸化膜が形成されたＳｉ基板である。この酸化膜付
きＳｉ基板であれば、表面が平滑であり、熱処理時の元
素の拡散も防止でき、かつ機械的強度も十分であること
により、ゾルゲル法により、良好な膜質のＰＺＴ薄膜を
形成することができる。The substrate used in the thin film piezoelectric element of the present invention is a Si substrate having an oxide film formed on the surface. This Si substrate with an oxide film has a smooth surface, can prevent diffusion of elements during heat treatment, and has sufficient mechanical strength, so that a PZT thin film of good film quality is formed by a sol-gel method. be able to.
【００１２】この酸化膜付きＳｉ基板の酸化膜の厚さ
は、薄過ぎると拡散防止効果がなく、厚過ぎるとクラッ
クの発生や基板のそりの問題があるので０．５〜２μｍ
程度であることが好ましい。If the thickness of the oxide film of the Si substrate with an oxide film is too small, there is no diffusion preventing effect. If the thickness is too large, cracks or warpage of the substrate may occur.
It is preferred that it is about.
【００１３】また、酸化膜付きＳｉ基板としては、薄膜
圧電素子としての用途上、できる限り薄いことが望まし
いが、過度に薄いと機械的強度が低下するため、厚さ１
００〜３００μｍ程度であることが好ましい。The Si substrate with an oxide film is desirably as thin as possible for use as a thin film piezoelectric element. However, if the Si substrate is excessively thin, the mechanical strength is reduced.
It is preferable that the thickness be about 00 to 300 μm.
【００１４】本発明の薄膜圧電素子は、このような酸化
膜付きＳｉ基板上に、下地電極層、ＰＺＴ薄膜及び上部
電極層を順次成膜して得られるが、下地電極層の成膜に
先立ち、Ｔｉ層を形成するのが、ＰＺＴ薄膜の成膜の上
で有利である。The thin-film piezoelectric element of the present invention is obtained by sequentially forming a base electrode layer, a PZT thin film and an upper electrode layer on such an oxide-coated Si substrate, but prior to forming the base electrode layer. , Ti layer is advantageous in forming a PZT thin film.
【００１５】即ち、ゾルゲル法によるＰＺＴ薄膜の成膜
では、乾燥、焼成時に収縮を伴うため、５μｍを超える
膜厚の薄膜を形成することは困難であるが、膜厚０．３
μｍ以下のＰＺＴ薄膜では、圧電体薄膜として機能する
には薄すぎて好ましくない。これに対して、酸化膜付き
Ｓｉ基板上にＴｉ層を形成しておくことにより、Ｓｉ基
板と下地電極との密着層としての作用で、ＰＺＴ薄膜を
０．３〜５μｍ程度の比較的厚い薄膜として形成するこ
とが可能となる。That is, in the formation of a PZT thin film by the sol-gel method, it is difficult to form a thin film having a thickness of more than 5 μm because shrinkage occurs during drying and baking.
A PZT thin film of μm or less is not preferable because it is too thin to function as a piezoelectric thin film. On the other hand, by forming a Ti layer on a Si substrate with an oxide film, a PZT thin film can be formed into a relatively thick thin film of about 0.3 to 5 μm by acting as an adhesion layer between the Si substrate and a base electrode. It is possible to form as.
【００１６】このＴｉ層はスパッタ法等により形成する
ことができ、その厚さは５０〜５００Å程度であること
が好ましい。Ｔｉ層の厚さが５０Å未満ではＴｉ層を形
成したことによる効果が十分に得られない。This Ti layer can be formed by a sputtering method or the like, and its thickness is preferably about 50 to 500 °. If the thickness of the Ti layer is less than 50 °, the effect of forming the Ti layer cannot be sufficiently obtained.
【００１７】下地電極層としては、Ｐｔ、Ｉｒ等の導電
性金属層をスパッタ法等で形成することができ、その厚
さは、通常の場合１０００〜２０００Å程度である。As the base electrode layer, a conductive metal layer such as Pt, Ir or the like can be formed by a sputtering method or the like, and its thickness is usually about 1000 to 2000 °.
【００１８】また、本発明において、下地電極層上にＰ
ＺＴ薄膜を形成するに先立ち、ＰｂＴｉＯ3 （チタン酸
鉛）薄膜を形成するのが、良好な膜質のＰＺＴ薄膜を形
成する上で好ましい。即ち、ＰｂＴｉＯ3 は低温で結晶
化し、その上に形成するＰＺＴ薄膜の鉛の拡散を防止す
るという作用効果でＰＺＴ薄膜の膜特性を高める。この
ＰｂＴｉＯ3 薄膜もＰＺＴ薄膜と同様にゾルゲル法で形
成することができ、その膜厚は０．０１〜０．１μｍ程
度であることが好ましい。ＰｂＴｉＯ3 薄膜の膜厚が
０．０１μｍ未満では、ＰｂＴｉＯ3 薄膜を形成したこ
とによる効果が十分に得られず、０．１μｍを超えると
ＰＺＴ薄膜の特性に影響する。Further, in the present invention, P
Prior to forming a ZT thin film, it is preferable to form a PbTiO 3 (lead titanate) thin film in order to form a PZT thin film having good film quality. That is, PbTiO 3 is crystallized at a low temperature, and the PZT thin film formed thereon has the effect of preventing the diffusion of lead, thereby enhancing the film characteristics of the PZT thin film. This PbTiO 3 thin film can be formed by the sol-gel method similarly to the PZT thin film, and its thickness is preferably about 0.01 to 0.1 μm. If the thickness of the PbTiO 3 thin film is less than 0.01 μm, the effect of forming the PbTiO 3 thin film cannot be sufficiently obtained, and if it exceeds 0.1 μm, the characteristics of the PZT thin film are affected.
【００１９】本発明において、圧電体薄膜としてのＰＺ
Ｔ薄膜は、高周波対応とするために膜厚１０μｍ以下で
あることが必要とされるが、好ましくは０．３〜５μｍ
の範囲で使用目的に応じて適宜決定される。ＰＺＴ薄膜
の膜厚が０．３μｍ未満では薄すぎて圧電効果が十分得
られず、５μｍを超えると良好な膜質が得られない。In the present invention, PZ as a piezoelectric thin film is used.
The T thin film is required to have a film thickness of 10 μm or less in order to be compatible with a high frequency.
Is appropriately determined in accordance with the purpose of use within the range. If the thickness of the PZT thin film is less than 0.3 μm, it is too thin to obtain a sufficient piezoelectric effect, and if it exceeds 5 μm, good film quality cannot be obtained.
【００２０】ＰＺＴ薄膜上の上部電極層としては、前述
の下地電極層と同様の導電性金属層をスパッタ法等によ
り形成することができ、その厚さは、通常の場合、１０
００〜２０００Å程度である。As the upper electrode layer on the PZT thin film, a conductive metal layer similar to the above-described base electrode layer can be formed by sputtering or the like.
It is about 2000 to 2000 degrees.
【００２１】次に、本発明の薄膜圧電素子の製造方法の
好適例について説明する。Next, a preferred example of the method for manufacturing a thin film piezoelectric element of the present invention will be described.
【００２２】まず、酸化膜付きＳｉ基板の表面に、スパ
ッタ法によりＴｉ層及び下地電極層を順次形成する。First, a Ti layer and a base electrode layer are sequentially formed on the surface of a silicon substrate with an oxide film by a sputtering method.
【００２３】次いで、下地電極層上に、酢酸鉛等の鉛化
合物及びチタニウムイソプロポキシド、チタニウムブト
キシド等のチタン化合物を所定のモル比で、合計濃度が
１〜１０重量％程度となるように、メトキシエタノー
ル、酢酸エステル等の溶剤に溶解したＰｂＴｉＯ3 薄膜
形成用組成物を塗布し、１５０〜４００℃で乾燥し、所
定の膜厚となるように、この塗布、乾燥を繰り返す。Next, a lead compound such as lead acetate and a titanium compound such as titanium isopropoxide and titanium butoxide are formed on the base electrode layer in a predetermined molar ratio so that the total concentration is about 1 to 10% by weight. The composition for forming a PbTiO 3 thin film dissolved in a solvent such as methoxyethanol or acetate is applied, dried at 150 to 400 ° C., and this application and drying are repeated so as to obtain a predetermined film thickness.
【００２４】更に、この上に、酢酸鉛等の鉛化合物、ジ
ルコニウムブトキシド、ジルコニウムプロポキシド等の
ジルコニウム化合物及びチタニウムイソプロポキシド、
チタニウムブトキシド等のチタン化合物を所定のモル比
で、合計濃度が１０〜２０重量％程度となるように、メ
トキシエタノール、酢酸エステル等の溶剤に溶解したＰ
ＺＴ薄膜形成用組成物を塗布し、１５０〜４００℃で乾
燥し、所定の膜厚となるように、この塗布、乾燥を繰り
返す。Further, a lead compound such as lead acetate, a zirconium compound such as zirconium butoxide and zirconium propoxide, and a titanium isopropoxide,
A titanium compound such as titanium butoxide is dissolved in a solvent such as methoxyethanol or acetate so that the total concentration is about 10 to 20% by weight at a predetermined molar ratio.
The composition for forming a ZT thin film is applied, dried at 150 to 400 ° C., and this application and drying are repeated so as to have a predetermined film thickness.
【００２５】最後に５００〜８００℃で０．１〜２ｈｒ
焼成する。Finally, at 500 to 800 ° C. for 0.1 to 2 hours
Bake.
【００２６】このようにして形成したＰＺＴ薄膜上に、
スパッタ法により上部電極層を形成する。その後、下地
電極層と上部電極層との間に１２０〜２００℃で２００
〜５００ｋＶ／ｃｍ程度の直流電界を１０〜６０分程度
印加してＰＺＴ薄膜の分極処理を行う。この分極処理を
行うことでＰＺＴ薄膜が圧電体薄膜として機能するよう
になる。On the PZT thin film thus formed,
An upper electrode layer is formed by a sputtering method. Thereafter, 200-200 ° C. is applied between the base electrode layer and the upper electrode layer.
A DC electric field of about 500 kV / cm is applied for about 10 to 60 minutes to perform polarization processing of the PZT thin film. By performing this polarization processing, the PZT thin film comes to function as a piezoelectric thin film.
【００２７】なお、ＰＺＴ薄膜の膜質が十分に良好なも
のでないと十分な分極処理ができず、圧電体薄膜として
機能させることができないため、本発明においては、基
板、下地電極層、ＰＺＴ薄膜層、上部電極の形成条件の
最適化により、膜質の良好なＰＺＴ薄膜を形成する。If the film quality of the PZT thin film is not sufficiently good, sufficient polarization treatment cannot be performed and the film cannot function as a piezoelectric thin film. Therefore, in the present invention, the substrate, the base electrode layer, the PZT thin film layer By optimizing the conditions for forming the upper electrode, a PZT thin film having good film quality is formed.
【００２８】前述の如く、酸化膜付きＳｉ基板の発振周
波数、損失等の特性面から薄膜圧電素子の基板はできる
限り薄い方が好ましく、従って、基板の薄肉化のため
に、上述のようにして作製された薄膜圧電素子におい
て、基板の上部電極層形成位置に相当する位置（上部電
極層を基板上に厚さ方向に透影した位置）をＴＭＡＨ
（ｔｅｔｒａｍｅｔｈｙｌ ａｍｍｏｎｉｕｍ ｈｙｄ
ｒｏｘｉｄｅ）等のエッチング液を用いて、部分的に基
板厚さの５０〜１００％程度除去しても良い。As described above, it is preferable that the substrate of the thin film piezoelectric element is as thin as possible in view of the characteristics such as the oscillation frequency and the loss of the Si substrate with an oxide film. Therefore, in order to make the substrate thinner, In the manufactured thin-film piezoelectric element, the position corresponding to the position where the upper electrode layer is formed on the substrate (the position where the upper electrode layer is projected on the substrate in the thickness direction) is TMAH.
(Tetramethyl ammonium hydr
The substrate may be partially removed by about 50 to 100% of the thickness of the substrate by using an etching solution such as oxide.
【００２９】このようなエッチング処理により、薄膜圧
電素子の機械的強度は若干劣るものとなるが、発振周波
数や損失等の特性の向上を図ることができる。Although the mechanical strength of the thin-film piezoelectric element is slightly deteriorated by such an etching process, characteristics such as an oscillation frequency and a loss can be improved.
【００３０】[0030]
【実施例】以下に実施例を挙げて本発明をより具体的に
説明する。The present invention will be described more specifically with reference to the following examples.
【００３１】実施例１ 基板として、表面に厚さ１μｍの酸化膜を有する厚さ２
５０μｍのＳｉ基板を用い、このＳｉ基板表面にスパッ
タ法により、厚さ５００ÅのＴｉ層及び厚さ２０００Å
のＰｔ下地電極層を順次形成した。Example 1 A substrate having a thickness of 2 μm having a 1 μm-thick oxide film on the surface
Using a 50 μm Si substrate, a 500 ° thick Ti layer and a 2000 ° thick Ti
Pt base electrode layers were sequentially formed.
【００３２】このＰｔ下地電極層上に、ゾルゲル法によ
り、厚さ０．０１μｍのＰｂＴｉＯ3 薄膜を形成し、更
に、このＰｂＴｉＯ3 薄膜上にゾルゲル法により、厚さ
０．８μｍのＰＺＴ薄膜を形成した。A PbTiO 3 thin film having a thickness of 0.01 μm is formed on the Pt base electrode layer by a sol-gel method, and a PZT thin film having a thickness of 0.8 μm is formed on the PbTiO 3 thin film by a sol-gel method. did.
【００３３】なお、ＰｂＴｉＯ3 薄膜の形成には、酢酸
鉛とチタニウムイソプロポキシドを所定のモル比で合計
濃度１重量％となるようにメトキシエタノールに溶解し
たＰｂＴｉＯ3 薄膜形成用溶液を用い、ＰＺＴ薄膜の形
成には、酢酸鉛とジルコニウムブトキシドとチタニウム
イソプロポキシドとを所定のモル比で合計濃度１８重量
％となるように溶解したＰＺＴ薄膜形成用溶液を用い、
スピンコートにより塗布した後４００℃で乾燥し、この
塗布、乾燥を所定の膜厚になるまで繰り返し、最後（Ｐ
ＺＴ薄膜形成後）に６００℃で１ｈｒ焼成した。[0033] Note that the formation of the PbTiO 3 film, using a PbTiO 3 thin film-forming solution in methoxyethanol as lead acetate and titanium isopropoxide a total concentration of 1% by weight at a predetermined molar ratio, PZT For the formation of the thin film, a solution for forming a PZT thin film in which lead acetate, zirconium butoxide and titanium isopropoxide are dissolved at a predetermined molar ratio so as to have a total concentration of 18% by weight is used.
After coating by spin coating, the coating is dried at 400 ° C., and the coating and drying are repeated until a predetermined film thickness is reached.
After the formation of the ZT thin film, the resultant was baked at 600 ° C. for 1 hour.
【００３４】更に、ＰＺＴ薄膜上にスパッタ法により厚
さ０．２μｍ、直径１００μｍの円形のＰｔ上部電極層
を形成した。Further, a circular Pt upper electrode layer having a thickness of 0.2 μm and a diameter of 100 μm was formed on the PZT thin film by sputtering.
【００３５】その後、下地電極と上部電極との間に１５
０℃で３００ｋＶ／ｃｍの直流電界を１０ｍｉｎ印加し
て分極処理し、薄膜圧電素子を得た。Thereafter, a distance between the underlying electrode and the upper electrode of 15
At 0 ° C., a DC electric field of 300 kV / cm was applied for 10 minutes to perform a polarization treatment to obtain a thin film piezoelectric element.
【００３６】この薄膜共振子は厚み振動の基本共振周波
数１．９ＧＨＺの励振を示した。This thin film resonator exhibited excitation at a fundamental resonance frequency of thickness vibration of 1.9 GHZ.
【００３７】実施例２ 実施例１において、基板として、表面に厚さ０．５μｍ
の酸化膜を有する厚さ５５０μｍのＳｉ基板を用い、Ｐ
ＺＴ薄膜を膜厚２．５μｍに形成したこと以外は同様に
して薄膜共振子を作製した。Example 2 In Example 1, the thickness of the substrate was 0.5 μm on the surface.
Using a 550 μm thick Si substrate having an oxide film of
A thin-film resonator was produced in the same manner except that the ZT thin film was formed to a thickness of 2.5 μm.
【００３８】この薄膜共振子は厚み振動の基本共振周波
数８００ＭＨＺの励振を示した。The thin-film resonator exhibited excitation at a fundamental resonance frequency of thickness vibration of 800 MHz.
【００３９】実施例３ 実施例１と同様にして酸化膜付きＳｉ基板上にＴｉ層、
Ｐｔ下地電極層、ＰｂＴｉＯ3 薄膜、ＰＺＴ薄膜及びＰ
ｔ上部電極層を形成して分極処理した後、上部電極層形
成位置に相当するＳｉ基板を厚さ１００μｍにわたって
ＴＭＡＨ液によりエッチングして除去して薄膜共振子を
作製した。Example 3 A Ti layer was formed on a silicon substrate with an oxide film in the same manner as in Example 1.
Pt base electrode layer, PbTiO 3 thin film, PZT thin film and P
After the upper electrode layer was formed and subjected to polarization processing, the Si substrate corresponding to the position where the upper electrode layer was formed was removed by etching with a TMAH solution over a thickness of 100 μm to produce a thin film resonator.
【００４０】この薄膜共振子は、厚み振動の基本共振周
波数１．９ＧＨＺの励振を示した。また、損失は１０ｄ
Ｂ以上低減された。This thin film resonator exhibited excitation at a fundamental resonance frequency of thickness vibration of 1.9 GHZ. The loss is 10d
B or more.
【００４１】[0041]
【発明の効果】以上詳述した通り、本発明の薄膜圧電素
子によれば、圧電体薄膜として電気機械結合係数の大き
いＰＺＴ薄膜を用いて、共振子、フィルタ等に適用した
場合の帯域幅及び発振周波数範囲の広い高周波用薄膜圧
電素子が提供される。As described above in detail, according to the thin-film piezoelectric element of the present invention, a PZT thin film having a large electromechanical coupling coefficient is used as a piezoelectric thin film, and the band width and the bandwidth when applied to a resonator, a filter, and the like. A high frequency thin film piezoelectric element having a wide oscillation frequency range is provided.
Claims (2)
膜と、 該ＰＺＴ薄膜上に形成された上部電極層とを備えてなる
薄膜圧電素子。An Si substrate having an oxide film; a base electrode layer formed on the oxide film of the Si substrate; a PZT thin film formed on the base electrode layer by a sol-gel method; And a top electrode layer formed on the thin film piezoelectric element.
が０．３〜５μｍであることを特徴とする薄膜圧電素
子。2. The thin film piezoelectric element according to claim 1, wherein the thickness of the PZT thin film is 0.3 to 5 μm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8272297A JPH10126204A (en) | 1996-10-15 | 1996-10-15 | Thin-film piezoelectric element |
| DE1997112496 DE19712496A1 (en) | 1996-03-26 | 1997-03-25 | Piezoelectric thin-film component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8272297A JPH10126204A (en) | 1996-10-15 | 1996-10-15 | Thin-film piezoelectric element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10126204A true JPH10126204A (en) | 1998-05-15 |
Family
ID=17511913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8272297A Withdrawn JPH10126204A (en) | 1996-03-26 | 1996-10-15 | Thin-film piezoelectric element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10126204A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014199910A (en) * | 2013-03-14 | 2014-10-23 | 株式会社リコー | Piezoelectric thin film element and ink-jet recording head, and ink-jet image forming apparatus |
| JP2016032007A (en) * | 2014-07-28 | 2016-03-07 | 株式会社リコー | Method for manufacturing piezoelectric film, method for manufacturing piezoelectric element, liquid discharge head and imaging apparatus |
-
1996
- 1996-10-15 JP JP8272297A patent/JPH10126204A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014199910A (en) * | 2013-03-14 | 2014-10-23 | 株式会社リコー | Piezoelectric thin film element and ink-jet recording head, and ink-jet image forming apparatus |
| JP2016032007A (en) * | 2014-07-28 | 2016-03-07 | 株式会社リコー | Method for manufacturing piezoelectric film, method for manufacturing piezoelectric element, liquid discharge head and imaging apparatus |
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