JPH1012377A - アクティブマトリックス型有機ｅｌ表示体の製造方法 - Google Patents

アクティブマトリックス型有機ｅｌ表示体の製造方法

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Publication number
JPH1012377A
JPH1012377A JP8158671A JP15867196A JPH1012377A JP H1012377 A JPH1012377 A JP H1012377A JP 8158671 A JP8158671 A JP 8158671A JP 15867196 A JP15867196 A JP 15867196A JP H1012377 A JPH1012377 A JP H1012377A
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JP
Japan
Prior art keywords
light emitting
organic light
emitting layer
organic
thin film
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JP8158671A
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JP3036436B2 (ja
Inventor
Tatsuya Shimoda
達也 下田
Satoru Miyashita
悟 宮下
Hiroshi Kiguchi
浩史 木口
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Seiko Epson Corp
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Seiko Epson Corp
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Ink Jet (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

(57)【要約】 【解決手段】従来、パターニングができないとされた有
機ＥＬ材料をインクジェット方式により形成および配列
することで、赤、緑、青の発光色を備える有機発光層を
画素毎に任意にパターニングすることが可能となった。
これにより、フルカラー表示のアクティブマトリックス
型有機ＥＬ表示体を実現した。 【効果】安価で大画面のフルカラー表示体が製造可能と
なり、効果は大である。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、薄膜トランジスタ
を用いたアクティブマトリックス型のＥＬ表示体のイン
クジェット方式を用いた製造方法に関する。
【０００２】
【従来の技術】有機ＥＬ素子は、蛍光性有機化合物を含
む薄膜を、陰極と陽極とで挟んだ構成を有し、前記薄膜
に電子および正孔（ホール）を注入して再結合させるこ
とにより励起子（エキシトン）を生成させ、このエキシ
トンが失活する際の光の放出（蛍光・燐光）を利用して
発光させる素子である。
【０００３】この有機ＥＬ素子の特徴は、１０Ｖ以下の
低電圧で１００〜１０００００ cd/m2 程度の高輝度の
面発光が可能であり、また蛍光物質の種類を選択するこ
とにより青色から赤色までの発光が可能なことである。
【０００４】有機ＥＬ素子は、安価な大面積フルカラー
表示素子を実現するものとして注目を集めている（電子
情報通信学会技術報告、第８９巻、ＮＯ．１０６、４９
ページ、１９８９年）。報告によると、強い蛍光を発す
る有機色素を発光層に使用し、青、緑、赤色の明るい発
光を得ている。これは、薄膜状で強い蛍光を発し、ピン
ホール欠陥の少ない有機色素を用いたことで、高輝度な
フルカラー表示を実現できたと考えられている。
【０００５】更に特開平５−７８６５５号公報には、有
機発光層の成分が有機電荷材料と有機発光材料の混合物
からなる薄膜層を設け、濃度消光を防止して発光材料の
選択幅を広げ、高輝度なフルカラー素子とする旨が提案
されている。
【０００６】しかし、いずれの報告にも、実際のフルカ
ラー表示パネルの構成や製造方法については言及されて
いない。
【０００７】
【発明が解決しようとする課題】前述の有機色素を用い
た有機薄膜EL素子は、青、緑、赤の発光を示す。しか
し、よく知られているように、フルカラー表示体を実現
するためには、３原色を発光する有機発光層を画素毎に
配置する必要がある。従来、有機発光層をパターニング
する技術は非常に困難とされていた。原因は、一つは反
射電極材の金属表面が不安定であり、蒸着のパターニン
グ精度が出ないという点である。２つめは、正孔注入層
および有機発光層を形成するポリマーや前駆体がフォト
リソグラフィー等のパターニング工程に対して耐性が無
いという点である。
【０００８】本発明は、上述したような課題を解決する
ものであり、その目的は、有機発光層をインクジェット
方式により画素毎にパターニングしたアクティブマトリ
ックス型ＥＬ表示体の製造方法を提供することにある。
【０００９】
【課題を解決するための手段】本発明に関わるアクティ
ブマトリックス型有機ＥＬ表示体の製造方法は、薄膜ト
ランジスタを有するガラス基板に形成された透明画素電
極上層に正孔注入層が形成され、この上層に少なくとも
各画素毎に赤、緑、青より選択された発光色を有する有
機発光層が形成され、更にこの上層に反射電極が形成さ
れるアクティブマトリックス型有機ＥＬ表示体の製造方
法において、前記有機発光層の形成および配列がインク
ジェット方式によりなされることを特徴とし、また、薄
膜トランジスタを有するガラス基板に形成された透明画
素電極上層に少なくとも各画素毎に赤、緑、青より選択
された発光色を有する有機発光層が形成され、更にこの
上層に反射電極が形成されるアクティブマトリックス型
有機ＥＬ表示体の製造方法において、前記有機発光層の
形成および配列がインクジェット方式によりなされるこ
とを特徴とする。
【００１０】更に、薄膜トランジスタを有するガラス基
板に形成された反射画素電極上層に少なくとも各画素毎
に赤、緑、青より選択された発光色を有する有機発光層
が形成され、この上層に正孔注入層が形成され、更にこ
の上層に透明電極が形成されるアクティブマトリックス
型有機ＥＬ表示体の製造方法において、前記有機発光層
の形成および配列がインクジェット方式によりなされる
ことを特徴とし、また、薄膜トランジスタを有するガラ
ス基板に形成された反射画素電極上層に少なくとも各画
素毎に赤、緑、青より選択された発光色を有する有機発
光層が形成され、更にこの上層に透明電極が形成される
アクティブマトリックス型有機ＥＬ表示体の製造方法に
おいて、前記有機発光層の形成および配列がインクジェ
ット方式によりなされることを特徴とする。
【００１１】本発明は、要するに図３に示すように、基
板上に形成された信号線３０１、ゲート線３０２、画素
電極３０３および薄膜トランジスタ３０４上に、インク
ジェット法により、赤、緑、青色の有機発光材料をパタ
ーニング塗布することで、フルカラー表示を実現するも
のである。
【００１２】
【発明の実施の形態】以下、本発明の好適な実施形態に
ついて図面を参照して説明する。
【００１３】（実施例１）図１に示すように、ガラス基
板１０１上に薄膜トランジスタ１０２を形成してから、
ＩＴＯ透明画素電極１０３を形成する。
【００１４】正孔注入材料としてポリマー前駆体である
ポリテトラヒドロチオフェニルフェニレンをコーティン
グする。加熱により、前駆体はポリフェニレンビニレン
となり、厚さ０．０５ミクロンの正孔注入層１０４が形
成される。
【００１５】次に、インクジェットプリント装置１０５
により赤、緑、青色を発色する発光材料をパターニング
塗布し、厚さ０．０５ミクロンの発色層１０６、１０
７、１０８を形成する。赤色発光材料にはシアノポリフ
ェニレンビニレン、緑色発光材料にはポリフェニレンビ
ニレン、青色発光材料にはポリフェニレンビニレンおよ
びポリアルキルフェニレンを使用する。これらの有機Ｅ
Ｌ材料はケンブリッジ・ディスプレイ・テクノロジー社
製であり、液状で入手可能である。
【００１６】最後に、厚さ０．１〜０．２ミクロンのＭ
ｇＡｇ反射電極１０９を蒸着法により形成する。
【００１７】これにより、直視型のフルカラー有機ＥＬ
表示体が完成する。
【００１８】（実施例２）図２に示すように、ガラス基
板２０１上に薄膜トランジスタ２０２を形成してから、
ＡｌＬｉ反射画素電極２０３を形成する。
【００１９】次に、インクジェットプリント装置２０７
により赤、緑、青色を発色する発光材料をパターニング
塗布し、発色層２０４、２０５、２０６を形成する。赤
色発光材料にはシアノポリフェニレンビニレン、緑色発
光材料にはポリフェニレンビニレン、青色発光材料には
ポリフェニレンビニレンおよびポリアルキルフェニレン
を使用する。これらの有機ＥＬ材料はケンブリッジ・デ
ィスプレイ・テクノロジー社製であり、液状で入手可能
である。
【００２０】正孔注入材料としてポリマー前駆体である
ポリテトラヒドロチオフェニルフェニレンをキャスト法
により形成する。加熱により、前駆体はポリフェニレン
ビニレンとなり、正孔注入層２０８が形成される。
【００２１】最後に、ＩＴＯ透明電極２０９を蒸着法に
より形成する。
【００２２】これにより、反射型のフルカラー有機ＥＬ
表示体が完成する。
【００２３】（実施例３）有機発光層の有機発光材料と
して2,3,6,7-テトラヒドロ-11-オキソ−1H,5H,11H-(1)
ベンゾピラノ[6,7,8-ij]-キノリジン-10-カルボン酸を
用い、有機正孔注入層材料として1,1-ビス-(4-N,N-ジト
リルアミノフェニル)シクロヘキサンを用い、両者を混
合することで緑色の発光材料とする。
【００２４】同様に、赤色の有機発光材料として、2-1
3',4'-ジヒドロキシフェニル)-3,5,7-トリヒドロキシ-1
-ベンゾピリリウムパークロレートを用いて正孔注入層
材料と混合する。
【００２５】更に、青色発光層には有機正孔注入材料と
してトリス(8-ヒドロキシキノリノール)アルミニウムを
用い、有機発光材料として、2,3,6,7-テトラヒドロ-9-
メチル-11-オキソ-1H,5H,11H-(1)ベンゾピラノ[6,7,8-i
j]-キノリジンを混合し、発光材料を作成する。
【００２６】実施例１または実施例２と同様な工程で、
各々の発光層をインクジェットプリンタ装置により局所
パターニングし、アクティブマトリックス型有機ＥＬ表
示体を作成する。
【００２７】なお、本実施例で使用した有機ＥＬ材料以
外にも、アロマティックジアミン誘導体（ＴＤＰ）、オ
キシジアゾールダイマー（ＯＸＤ）、オキシジアゾール
誘導体（ＰＢＤ）、ジスチルアリーレン誘導体（ＤＳ
Ａ）、キノリノール系金属錯体、ベリリウム−ベンゾキ
ノリノール錯体（Ｂｅｂｑ）、トリフェニルアミン誘導
体（ＭＴＤＡＴＡ）、ジスチリル誘導体、ピラゾリンダ
イマー、ルブレン、キナクリドン、トリアゾール誘導
体、ポリフェニレン、ポリアルキルフルオレン、ポリア
ルキルチオフェン、アゾメチン亜鉛錯体、ポリフィリン
亜鉛錯体、ベンゾオキサゾール亜鉛錯体、フェナントロ
リンユウロピウム錯体が使用できるが、これに限られる
物ではない。
【００２８】
【発明の効果】従来、パターニングができないとされた
有機ＥＬ材料をインクジェット方式により形成および配
列することでパターニングが可能となり、フルカラー表
示のアクティブマトリックス型有機ＥＬ表示体を実現し
た。これにより、安価で大画面のフルカラー表示体が製
造可能となり、効果は大である。
【図面の簡単な説明】
【図１】本発明の第１の実施形態におけるアクティブマ
トリックス型有機ＥＬ表示体の工程を示す図である。
【図２】本発明の第２の実施形態におけるアクティブマ
トリックス型有機ＥＬ表示体の工程を示す図である。
【図３】本発明の薄膜トランジスタ上にインクジェット
法により形成された発色層を示す図である。
【符号の説明】
１０１ ガラス基板 １０２ 薄膜トランジスタ １０３ 透明画素電極 １０４ 正孔注入層 １０５ インクジェットプリンタヘッド １０６ 有機発光層（第１色） １０７ 有機発光層（第２色） １０８ 有機発光層（第３色） １０９ 反射電極 ２０１ ガラス基板 ２０２ 薄膜トランジスタ ２０３ 反射画素電極 ２０４ 有機発光層（第１色） ２０５ 有機発光層（第２色） ２０６ 有機発光層（第３色） ２０７ インクジェットプリンタヘッド ２０８ 正孔注入層 ２０９ 透明電極 ３０１ 信号線 ３０２ ゲート線 ３０３ 画素電極 ３０４ 薄膜トランジスタ ３０５ 有機発光層（第１色） ３０６ 有機発光層（第２色） ３０７ 有機発光層（第３色）

Claims (4)

    【特許請求の範囲】
  1. 【請求項１】 薄膜トランジスタを有するガラス基板に
    形成された透明画素電極上層に正孔注入層が形成され、
    この上層に少なくとも各画素毎に赤、緑、青より選択さ
    れた発光色を有する有機発光層が形成され、更にこの上
    層に反射電極が形成されるアクティブマトリックス型有
    機ＥＬ表示体の製造方法において、前記有機発光層の形
    成および配列がインクジェット方式によりなされること
    を特徴とするアクティブマトリックス型有機ＥＬ表示体
    の製造方法。
  2. 【請求項２】 薄膜トランジスタを有するガラス基板に
    形成された透明画素電極上層に少なくとも各画素毎に
    赤、緑、青より選択された発光色を有する有機発光層が
    形成され、更にこの上層に反射電極が形成されるアクテ
    ィブマトリックス型有機ＥＬ表示体の製造方法におい
    て、前記有機発光層の形成および配列がインクジェット
    方式によりなされることを特徴とするアクティブマトリ
    ックス型有機ＥＬ表示体の製造方法。
  3. 【請求項３】 薄膜トランジスタを有するガラス基板に
    形成された反射画素電極上層に少なくとも各画素毎に
    赤、緑、青より選択された発光色を有する有機発光層が
    形成され、この上層に正孔注入層が形成され、更にこの
    上層に透明電極が形成されるアクティブマトリックス型
    有機ＥＬ表示体の製造方法において、前記有機発光層の
    形成および配列がインクジェット方式によりなされるこ
    とを特徴とするアクティブマトリックス型有機ＥＬ表示
    体の製造方法。
  4. 【請求項４】 薄膜トランジスタを有するガラス基板に
    形成された反射画素電極上層に少なくとも各画素毎に
    赤、緑、青より選択された発光色を有する有機発光層が
    形成され、更にこの上層に透明電極が形成されるアクテ
    ィブマトリックス型有機ＥＬ表示体の製造方法におい
    て、前記有機発光層の形成および配列がインクジェット
    方式によりなされることを特徴とするアクティブマトリ
    ックス型有機ＥＬ表示体の製造方法。
JP8158671A 1996-06-19 1996-06-19 アクティブマトリックス型有機ｅｌ表示体の製造方法 Expired - Lifetime JP3036436B2 (ja)

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KR100515822B1 (ko) * 1998-05-29 2005-11-25 삼성에스디아이 주식회사 고분자 유기 전자발광소자의 제조방법
US7116308B1 (en) 1998-06-19 2006-10-03 Cambridge Display Technology Limited Backlit displays
WO1999066483A1 (en) * 1998-06-19 1999-12-23 Cambridge Display Technology Ltd. Backlit displays
US8529309B2 (en) 1998-06-19 2013-09-10 Cambridge Display Technology Limited Backlit displays including organic light-emissive material
US7402091B2 (en) 1998-06-19 2008-07-22 Cambridge Display Technology Ltd. Backlit displays including organic light-emissive material
WO2000014813A1 (fr) * 1998-09-04 2000-03-16 Seiko Epson Corporation Dispositif dote de moyens de communication optiques
US6775428B2 (en) 1998-09-04 2004-08-10 Seiko Epson Corporation Device having a light transmission device
US6430325B1 (en) 1998-09-04 2002-08-06 Seiko Epson Corporation Device having a light transmission device
JP2000208254A (ja) * 1999-01-11 2000-07-28 Seiko Epson Corp 有機ｅｌ素子の製造方法および有機ｅｌ表示装置
US8187669B2 (en) 1999-03-29 2012-05-29 Seiko Epson Corporation Composition, film manufacturing method, as well as functional device and manufacturing method therefor
US9620719B2 (en) 1999-03-29 2017-04-11 Seiko Epson Corporation Composition, film manufacturing method, as well as functional device and manufacturing method therefor
US8231932B2 (en) 1999-03-29 2012-07-31 Cambridge Display Technology Limited Composition, film manufacturing method, as well as functional device and manufacturing method therefor
JP2000323276A (ja) * 1999-05-14 2000-11-24 Seiko Epson Corp 有機ｅｌ素子の製造方法、有機ｅｌ素子およびインク組成物
US9293726B2 (en) 1999-06-04 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
EP2296443A2 (en) 1999-06-04 2011-03-16 Semiconductor Energy Laboratory Co, Ltd. Electro-optical device with an insulating layer
EP1058314A2 (en) * 1999-06-04 2000-12-06 Sel Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US8987988B2 (en) 1999-06-04 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2001052864A (ja) * 1999-06-04 2001-02-23 Semiconductor Energy Lab Co Ltd 電気光学装置の作製方法
US9368680B2 (en) 1999-06-04 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US9178177B2 (en) 1999-06-04 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US9123854B2 (en) 1999-06-04 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
EP1058314A3 (en) * 1999-06-04 2005-09-14 Sel Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US8890172B2 (en) 1999-06-04 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US6689492B1 (en) 1999-06-04 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US6420200B1 (en) 1999-06-28 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6872672B2 (en) 1999-06-28 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6958251B2 (en) 1999-06-28 2005-10-25 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device using a printing method
US7342251B2 (en) 1999-06-28 2008-03-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6440877B1 (en) 1999-06-28 2002-08-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
EP1071117A3 (en) * 1999-07-23 2006-04-19 Sel Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a display device, and apparatus for forming a thin film
US7258768B2 (en) 1999-07-23 2007-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating an EL display device, and apparatus for forming a thin film
US6720029B2 (en) 1999-08-06 2004-04-13 Sharp Kabushiki Kaisha Coating liquid for forming organic layer in organic LED display and method of manufacturing organic LED display
EP1093167A3 (en) * 1999-10-12 2007-02-21 Sel Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US8884301B2 (en) 1999-10-12 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. EL display device and a method of manufacturing the same
JP2008204961A (ja) * 1999-10-12 2008-09-04 Semiconductor Energy Lab Co Ltd 発光装置の作製方法
EP1093167A2 (en) 1999-10-12 2001-04-18 Sel Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
EP1705692A2 (en) * 1999-10-13 2006-09-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
EP1705692A3 (en) * 1999-10-13 2007-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6582504B1 (en) 1999-11-24 2003-06-24 Sharp Kabushiki Kaisha Coating liquid for forming organic EL element
JP2001345176A (ja) * 2000-02-28 2001-12-14 Semiconductor Energy Lab Co Ltd 薄膜形成装置およびその薄膜形成方法、及び自発光装置
US6696105B2 (en) 2000-02-28 2004-02-24 Semiconductor Energy Laboratory Co., Ltd. Thin film forming device, thin film forming method, and self-light emitting device
JP4601842B2 (ja) * 2000-02-28 2010-12-22 株式会社半導体エネルギー研究所 薄膜形成方法
US6699739B2 (en) 2000-03-06 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Thin film forming device, method of forming a thin, and self-light-emitting device
US7564054B2 (en) 2000-03-06 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Thin film forming device, method of forming a thin film, and self-light-emitting device
US7022535B2 (en) 2000-03-06 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Thin film forming device, method of forming a thin film, and self-light-emitting device
US7038836B2 (en) 2000-03-27 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Self-light emitting device and method of manufacturing the same
US7462384B2 (en) 2000-03-27 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Self-light emitting device and method of manufacturing the same
US7303781B2 (en) 2000-03-31 2007-12-04 Seiko Epson Corporation Thin film formation method by ink jet method, ink jet apparatus, production method of organic EL device, and organic EL device
US6852994B2 (en) 2000-03-31 2005-02-08 Seiko Epson Corporation Organic EL device and method of manufacturing organic EL device
US7303274B2 (en) 2000-03-31 2007-12-04 Seiko Epson Corporation Thin film formation method by ink jet method, ink jet apparatus, production method of organic EL device, and organic EL device
US7390693B2 (en) 2000-03-31 2008-06-24 Seiko Epson Corporation Organic EL device and method of manufacturing organic EL device
US6623097B2 (en) 2000-03-31 2003-09-23 Seiko Epson Corporation Thin film formation method by ink jet method, ink jet apparatus, production method of organic EL device, and organic EL device
JP2002050484A (ja) * 2000-05-22 2002-02-15 Semiconductor Energy Lab Co Ltd 発光装置および電気器具
JP4683766B2 (ja) * 2000-05-22 2011-05-18 株式会社半導体エネルギー研究所 アクティブマトリクス型発光装置
JP2018110243A (ja) * 2000-06-05 2018-07-12 株式会社半導体エネルギー研究所 アクティブマトリクス型発光装置
JP2018121067A (ja) * 2000-06-05 2018-08-02 株式会社半導体エネルギー研究所 アクティブマトリクス型発光装置
US10777615B2 (en) 2000-06-05 2020-09-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US10192934B2 (en) 2000-06-05 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having light emission by a singlet exciton and a triplet exciton
US10446615B2 (en) 2000-06-05 2019-10-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2017063216A (ja) * 2000-06-05 2017-03-30 株式会社半導体エネルギー研究所 発光装置
US7560860B2 (en) 2000-08-18 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device including multiple light emitting layers
US6822629B2 (en) 2000-08-18 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6905784B2 (en) 2000-08-22 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6538390B2 (en) 2000-09-06 2003-03-25 Sharp Kabushiki Kaisha Organic LED display device of active matrix drive type and fabrication method therefor
US7462372B2 (en) 2000-09-08 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and thin film forming apparatus
US7744949B2 (en) 2000-09-08 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing method thereof and thin film forming apparatus
WO2002032582A1 (fr) * 2000-10-17 2002-04-25 Seiko Epson Corporation Imprimante a jet d"encre et procede de fabrication d"un substrat fonctionnel servant a deposer un liquide
US6893103B2 (en) 2000-10-17 2005-05-17 Seiko Epson Corporation Ink jet recording apparatus and manufacturing method for functional liquid applied substrate
US7521709B2 (en) 2000-11-27 2009-04-21 Seiko Epson Corporation Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith
US7990052B2 (en) 2000-11-27 2011-08-02 Seiko Epson Corporation Organic electroluminescent device
EP2270857A2 (en) 2000-11-27 2011-01-05 Seiko Epson Corporation Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith
US8454403B2 (en) 2000-11-27 2013-06-04 Seiko Epson Corporation Methods of manufacturing an organic electroluminescent device
US6784459B2 (en) 2000-11-27 2004-08-31 Seiko Epson Corporation Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith
US8698136B2 (en) 2000-11-27 2014-04-15 Seiko Epson Corporation Methods of manufacturing an organic electroluminescent device
US6924593B2 (en) 2000-11-27 2005-08-02 Seiko Epson Corporation Manufacturing method for organic electroluminescent device including an effectively optical area and an organic electroluminescent layer, organic electroluminescent device, and electronic devices therewith
EP2760049A1 (en) 2000-11-27 2014-07-30 Seiko Epson Corporation Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith
EP1209744A2 (en) 2000-11-27 2002-05-29 Seiko Epson Corporation Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith
US7755277B2 (en) 2000-11-27 2010-07-13 Seiko Epson Corporation Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith
US8128448B2 (en) 2000-11-27 2012-03-06 Seiko Epson Corporation Methods of manufacturing an organic electroluminescent device
US7470976B2 (en) 2000-11-27 2008-12-30 Seiko Epson Corporation Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith
US7186581B2 (en) 2000-11-27 2007-03-06 Seiko Epson Corporation Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith
US7300686B2 (en) 2000-11-28 2007-11-27 Seiko Epson Corporation Organic electro-luminescent device, manufacturing method for the same, and electronic equipment
US7488506B2 (en) 2000-11-28 2009-02-10 Seiko Epson Corporation Organic electro-luminescent device, manufacturing method for the same, and electronic equipment
US6787063B2 (en) 2001-03-12 2004-09-07 Seiko Epson Corporation Compositions, methods for producing films, functional elements, methods for producing functional elements, methods for producing electro-optical devices and methods for producing electronic apparatus
US7198814B2 (en) 2001-03-12 2007-04-03 Seiko Epson Corporation Compositions, methods for producing films, functional elements, methods for producing functional elements, method for producing electro-optical devices and methods for producing electronic apparatus
KR100635037B1 (ko) * 2001-04-12 2006-10-17 삼성에스디아이 주식회사 유기 전계발광 디바이스
US6815141B2 (en) 2001-05-18 2004-11-09 Sharp Kabushiki Kaisha Organic Led display panel production method, organic Led display panel produced by the method, and base film and substrate for use in the method
US7567031B2 (en) 2001-06-01 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and light emitting device using the element
US7199515B2 (en) 2001-06-01 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and light emitting device using the element
US7063869B2 (en) 2001-06-15 2006-06-20 Semiconductor Energy Laboratory Co., Ltd. Printing device and method of manufacturing a light emitting device
US8632166B2 (en) 2001-06-15 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Printing device and method of manufacturing a light emitting device
US7674494B2 (en) 2001-06-15 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Printing device and method of manufacturing a light emitting device
US7378291B2 (en) 2001-07-06 2008-05-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US8425016B2 (en) 2001-07-06 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US7547563B2 (en) 2001-07-06 2009-06-16 Semicondutor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US8752940B2 (en) 2001-07-06 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US8197052B2 (en) 2001-07-06 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US6825867B2 (en) 2001-07-09 2004-11-30 Seiko Epson Corporation Organic electroluminescent array exposure head, method of fabricating the same, and image forming apparatus using the same
US8093656B2 (en) 2001-08-29 2012-01-10 Seiko Epson Corporation Electrooptical device and electronic equipment having resin film in light emitting region and sealing region
US7333167B2 (en) 2001-08-29 2008-02-19 Seiko Epson Corporation Electrooptical device and electronic equipment having resin film in light emitting region and sealing region
EP1986472A2 (en) 2001-09-12 2008-10-29 Seiko Epson Corporation Method for patterning, method for forming film, patterning apparatus, film formation apparatus, electro-optic apparatus and method for manufacturing the same, electronic equipment, and electronic apparatus and method for manufacturing the same
CN100424586C (zh) * 2001-09-14 2008-10-08 精工爱普生株式会社 图案形成方法、电敏感元件及滤色器的制造方法
US8294637B2 (en) 2001-11-21 2012-10-23 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
EP2287825A3 (en) * 2001-11-21 2012-08-15 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
US8525760B2 (en) 2001-11-21 2013-09-03 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
US7345141B2 (en) 2001-11-22 2008-03-18 Sharp Kabushiki Kaisha Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same
US6900597B2 (en) 2001-12-20 2005-05-31 Seiko Epson Corporation Emitter, method of designing brightness of emitter, program for method of designing brightness of emitter, electrooptical device and electric device
US8450925B2 (en) 2002-01-25 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing thereof
US7728513B2 (en) 2002-01-25 2010-06-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing thereof
US8937429B2 (en) 2002-01-25 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing thereof
US8747178B2 (en) 2002-01-25 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of light emitting device
US8004183B2 (en) 2002-01-25 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing thereof
US6878470B2 (en) 2002-02-08 2005-04-12 Fuji Photo Film Co., Ltd. Visible image receiving material, conductive pattern material and organic electroluminescence element, using member having surface hydrophilicity
US7081912B2 (en) 2002-03-11 2006-07-25 Seiko Epson Corporation Optical writing head such as organic EL array exposure head, method of manufacturing the same, and image forming apparatus using the same
EP1564008A1 (en) 2002-05-31 2005-08-17 Seiko Epson Corporation Optical head and image forming apparatus employing the same
EP1564007A1 (en) 2002-05-31 2005-08-17 Seiko Epson Corporation Optical head and image forming apparatus employing the same
EP1366920A1 (en) 2002-05-31 2003-12-03 Seiko Epson Corporation Optical head and image forming apparatus employing the same
US6858464B2 (en) 2002-06-19 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
US7569405B2 (en) 2002-06-19 2009-08-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
US8105855B2 (en) 2002-06-19 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
US8906714B2 (en) 2002-06-19 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
US7163836B2 (en) 2002-06-19 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
US7204735B2 (en) 2002-07-09 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Production apparatus and method of producing a light-emitting device by using the same apparatus
US7744438B2 (en) 2002-07-09 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Production apparatus and method of producing a light-emitting device by using the same apparatus
US8197295B2 (en) 2002-07-09 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Production apparatus and method of producing a light-emitting device by using the same apparatus
US7922554B2 (en) 2002-07-09 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Production apparatus and method of producing a light-emitting device by using the same apparatus
US8932666B2 (en) 2002-09-24 2015-01-13 National Institute Of Advanced Industrial Science And Technology Method and apparatus for manufacturing active-matrix organic el display, active matrix organic el display, method for manufacturing liquid crystal array, liquid crystal array, method and apparatus for manufacturing color filter substrate, and color filter substrate
JPWO2004045252A1 (ja) * 2002-11-11 2006-03-16 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4588445B2 (ja) * 2002-11-11 2010-12-01 株式会社半導体エネルギー研究所 発光装置の作製方法
US7722919B2 (en) 2002-11-11 2010-05-25 Semiconductor Energy Laboratory Co., Inc. Manufacturing method of emitting device
WO2004045252A1 (ja) * 2002-11-11 2004-05-27 Semiconductor Energy Laboratory Co., Ltd. 発光装置の作製方法
US7224115B2 (en) 2002-12-11 2007-05-29 Sony Corporation Display apparatus and method of manufacturing the same
US7718452B2 (en) 2002-12-11 2010-05-18 Sony Corporation Display apparatus and method of manufacturing the same
JP2004207217A (ja) * 2002-12-11 2004-07-22 Sony Corp 表示装置及び表示装置の製造方法
US7119826B2 (en) 2002-12-16 2006-10-10 Seiko Epson Corporation Oranic EL array exposure head, imaging system incorporating the same, and array-form exposure head fabrication process
US7252570B2 (en) 2003-01-23 2007-08-07 Seiko Epson Corporation Manufacturing method for organic electroluminescence device, and electronic device therewith
US8026114B2 (en) 2003-01-28 2011-09-27 Seiko Epson Corporation Emitter, manufacturing method and manufacturing apparatus thereof, electro-optical apparatus and electronic apparatus
US7071486B2 (en) 2003-01-28 2006-07-04 Seiko Epson Corporation Emitter, manufacturing method and manufacturing apparatus thereof, electro-optical apparatus and electronic apparatus
KR100622902B1 (ko) 2003-01-28 2006-09-18 세이코 엡슨 가부시키가이샤 발광체와 그 제조 방법 및 제조 장치, 전기 광학 장치 및전자 기기
US7345304B2 (en) 2003-01-28 2008-03-18 Seiko Epson Corporation Emitter, manufacturing method and manufacturing apparatus thereof, electro-optical apparatus and electronic apparatus
US7038362B2 (en) 2003-05-13 2006-05-02 Seiko Epson Corporation Display apparatus and method for displaying information
US7553208B2 (en) 2003-05-30 2009-06-30 Hitachi Displays, Ltd. Manufacturing method of organic electroluminescence display device
US7348207B2 (en) * 2003-10-23 2008-03-25 Seiko Epson Corporation Method of manufacturing organic EL device, organic EL device, and electronic apparatus
US7374264B2 (en) 2004-03-23 2008-05-20 Sharp Kabushiki Kaisha Patterned substrate, and method and apparatus for manufacturing the same
US7782351B2 (en) 2004-08-03 2010-08-24 Seiko Epson Corporation Exposure head
JP2006189853A (ja) * 2004-12-29 2006-07-20 Dupont Displays Inc 電子デバイスおよび電子デバイスを形成する方法
US7394196B2 (en) 2005-01-14 2008-07-01 Seiko Epson Corporation Light emitting element, display device and electronic instrument
US7307297B2 (en) 2005-02-10 2007-12-11 Japan Science And Technology Agency Organic photodiode and method for manufacturing the organic photodiode
US7737454B2 (en) 2005-02-25 2010-06-15 Seiko Epson Corporation Organic light-emitting element, organic light-emitting device, and electronic apparatus
JP2005158757A (ja) * 2005-03-07 2005-06-16 Seiko Epson Corp 有機ｅｌ表示装置の製造方法
JP4548153B2 (ja) * 2005-03-07 2010-09-22 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
US7485023B2 (en) 2005-03-31 2009-02-03 Toppan Printing Co., Ltd. Organic electroluminescent device having partition wall and a manufacturing method of the same by relief printing method
US7719183B2 (en) 2005-07-01 2010-05-18 Toppan Printing Co., Ltd. Manufacturing method of organic electroluminescent device and an organic electroluminescent device
US7686665B2 (en) 2005-09-22 2010-03-30 Toppan Printing Co., Ltd. Manufacturing method of a printed matter and a printed matter
US7595353B2 (en) 2005-09-29 2009-09-29 Chisso Corporation Fluorine-containing photocurable polymer composition
JP2007106428A (ja) * 2005-10-11 2007-04-26 Sharp Corp インクタンク及びインクジェット塗布装置
US7766712B2 (en) 2005-10-25 2010-08-03 Sharp Kabushiki Kaisha Method for fabricating organic electroluminescent display and fabrication apparatus used in the method
US7696683B2 (en) 2006-01-19 2010-04-13 Toppan Printing Co., Ltd. Organic electroluminescent element and the manufacturing method
US7546803B2 (en) 2006-01-30 2009-06-16 Toppan Printing Co., Ltd. Letterpress printing machine
US7906901B2 (en) 2006-02-14 2011-03-15 Sharp Kabushiki Kaisha Organic electroluminescent device and organic electroluminescent display device
US7819716B2 (en) 2006-02-15 2010-10-26 Toppan Printing Co., Ltd. Organic electroluminescent element and the manufacturing method
US7880382B2 (en) 2006-03-08 2011-02-01 Toppan Printing Co., Ltd. Organic electroluminescence panel and manufacturing method of the same
US7687390B2 (en) 2006-03-28 2010-03-30 Toppan Printing Co., Ltd. Manufacturing method of a transparent conductive film, a manufacturing method of a transparent electrode of an organic electroluminescence device, an organic electroluminescence device and the manufacturing method
US7791275B2 (en) 2006-03-30 2010-09-07 Toppan Printing Co., Ltd. Organic electroluminescence element and manufacturing method of the same
US7922553B2 (en) 2006-04-05 2011-04-12 Sharp Kabushiki Kaisha Organic electroluminescent display device and production method thereof
EP2567995A2 (en) 2006-12-26 2013-03-13 Asahi Kasei E-materials Corporation Resin composition for printing plate
US7910287B2 (en) 2007-02-14 2011-03-22 Toppan Printing Co., Ltd. Relief printing plate, and method for manufacturing electronic circuit pattern, organic electroluminescence device and organic electronic device by using the same
US7897216B2 (en) 2007-02-21 2011-03-01 Seiko Epson Corporation Method for manufacturing organic device and electronic apparatus
US9290691B2 (en) 2007-02-28 2016-03-22 Idemitsu Kosan Co., Ltd. Organic el material-containing solution, method for forming organic el thin film, organic el device comprising organic el thin film, and method for manufacturing organic el display panel
WO2008105472A1 (ja) * 2007-02-28 2008-09-04 Idemitsu Kosan Co., Ltd. 有機ｅｌ材料含有溶液、有機ｅｌ薄膜形成方法、有機ｅｌ薄膜を含む有機ｅｌ素子および有機ｅｌディスプレイパネル製造方法
JP5320282B2 (ja) * 2007-02-28 2013-10-23 出光興産株式会社 有機ｅｌ材料含有溶液、有機ｅｌ薄膜形成方法、有機ｅｌ薄膜を含む有機ｅｌ素子および有機ｅｌディスプレイパネル製造方法
US8414960B2 (en) 2008-03-31 2013-04-09 Panasonic Corporation Ink composition for organic electroluminescent device and production method thereof
US8456080B2 (en) 2008-08-08 2013-06-04 Sony Corporation Display device for detecting misregistration and width variation and method of manufacturing same
CN102144314A (zh) * 2008-09-04 2011-08-03 欧司朗光电半导体有限公司 用于制造发射辐射的有机器件的方法以及发射辐射的有机器件
US8927325B2 (en) 2008-09-04 2015-01-06 Osram Opto Semiconductor Gmbh Method for producing an organic radiation-emitting component and organic radiation-emitting component
US8040049B2 (en) 2008-09-29 2011-10-18 Toppan Printing Co., Ltd. Organic EL element and method for manufacturing thereof
WO2010084897A1 (ja) 2009-01-22 2010-07-29 住友化学株式会社 有機エレクトロルミネッセンス素子用インクジェットインクおよび有機エレクトロルミネッセンス素子の製造方法
KR20110119716A (ko) 2009-01-22 2011-11-02 스미또모 가가꾸 가부시키가이샤 유기 전계 발광 소자용 잉크젯 잉크 및 유기 전계 발광 소자의 제조 방법
US8932098B2 (en) 2010-09-27 2015-01-13 Toppan Printing Co., Ltd. Relief printing plate and method for producing organic EL device using the same
US10784470B2 (en) 2012-12-27 2020-09-22 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US9010899B2 (en) 2012-12-27 2015-04-21 Kateeva, Inc. Techniques for print ink volume control to deposit fluids within precise tolerances
US11678561B2 (en) 2012-12-27 2023-06-13 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US11673155B2 (en) 2012-12-27 2023-06-13 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US9802403B2 (en) 2012-12-27 2017-10-31 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US9832428B2 (en) 2012-12-27 2017-11-28 Kateeva, Inc. Fast measurement of droplet parameters in industrial printing system
US11489146B2 (en) 2012-12-27 2022-11-01 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US9537119B2 (en) 2012-12-27 2017-01-03 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US11233226B2 (en) 2012-12-27 2022-01-25 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US9352561B2 (en) 2012-12-27 2016-05-31 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US9224952B2 (en) 2012-12-27 2015-12-29 Kateeva, Inc. Methods of manufacturing electronic display devices employing nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US11167303B2 (en) 2012-12-27 2021-11-09 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US11141752B2 (en) 2012-12-27 2021-10-12 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US9700908B2 (en) 2012-12-27 2017-07-11 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
US10784472B2 (en) 2012-12-27 2020-09-22 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US10950826B2 (en) 2012-12-27 2021-03-16 Kateeva, Inc. Techniques for print ink droplet measurement and control to deposit fluids within precise tolerances
US10797270B2 (en) 2012-12-27 2020-10-06 Kateeva, Inc. Nozzle-droplet combination techniques to deposit fluids in substrate locations within precise tolerances
US10811324B2 (en) 2013-12-12 2020-10-20 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light emitting device
US8995022B1 (en) 2013-12-12 2015-03-31 Kateeva, Inc. Ink-based layer fabrication using halftoning to control thickness
US11088035B2 (en) 2013-12-12 2021-08-10 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light emitting device
US10586742B2 (en) 2013-12-12 2020-03-10 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light emitting device
US10522425B2 (en) 2013-12-12 2019-12-31 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light emitting device
US9496519B2 (en) 2013-12-12 2016-11-15 Kateeva, Inc. Encapsulation of components of electronic device using halftoning to control thickness
US11456220B2 (en) 2013-12-12 2022-09-27 Kateeva, Inc. Techniques for layer fencing to improve edge linearity
US9831473B2 (en) 2013-12-12 2017-11-28 Kateeva, Inc. Encapsulation layer thickness regulation in light emitting device
US11551982B2 (en) 2013-12-12 2023-01-10 Kateeva, Inc. Fabrication of thin-film encapsulation layer for light-emitting device
US9806298B2 (en) 2013-12-12 2017-10-31 Kateeva, Inc. Techniques for edge management of printed layers in the fabrication of a light emitting device
US9755186B2 (en) 2013-12-12 2017-09-05 Kateeva, Inc. Calibration of layer thickness and ink volume in fabrication of encapsulation layer for light emitting device

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