JPH10109072A - High frequency washing device - Google Patents
High frequency washing deviceInfo
- Publication number
- JPH10109072A JPH10109072A JP8264175A JP26417596A JPH10109072A JP H10109072 A JPH10109072 A JP H10109072A JP 8264175 A JP8264175 A JP 8264175A JP 26417596 A JP26417596 A JP 26417596A JP H10109072 A JPH10109072 A JP H10109072A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- cleaning
- washing
- washing liquid
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、液晶ガラス基板、
半導体ウェハや磁気ディスク等の被洗浄物を高周波洗浄
するための装置に関する。[0001] The present invention relates to a liquid crystal glass substrate,
The present invention relates to an apparatus for high-frequency cleaning an object to be cleaned such as a semiconductor wafer and a magnetic disk.
【０００２】[0002]
【従来の技術】従来、液晶ガラス基板、半導体ウェハ、
磁気ディスク等の被洗浄物を洗浄するには、高周波振動
子により振動する振動板を有する洗浄槽内に洗浄液を収
容し、高周波音波の作用により前記洗浄液内に浸漬され
た被洗浄物表面のパーティクル等を除去することが行わ
れている。2. Description of the Related Art Conventionally, liquid crystal glass substrates, semiconductor wafers,
To clean an object to be cleaned such as a magnetic disk, a cleaning liquid is contained in a cleaning tank having a vibration plate vibrated by a high-frequency vibrator, and particles on the surface of the object to be cleaned immersed in the cleaning liquid by the action of high-frequency sound waves And so on.
【０００３】前記洗浄液としては、純水装置に脱気水製
造機を付加させて金属イオン、パーティクルの他に、溶
存ガスを除去したものを使用することが主流になってい
る。溶存ガス中の酸素を除去する目的は、被洗浄物とし
て半導体ウェハを用いる場合、その表面の酸化膜成長を
防止するためである。また、溶存ガス中の酸素を除去す
ることにより配管中でのバクテリアの発生を防止するこ
とができる。一方、溶存ガス中の炭酸ガスは純水の比抵
抗を増大させて純水装置のイオン交換樹脂の劣化を招く
ため、炭酸ガスを除去することにより純水装置の負担を
軽減できる。[0003] As the cleaning liquid, a dewatered water production machine has been added to a pure water apparatus to remove dissolved gas in addition to metal ions and particles. The purpose of removing oxygen in the dissolved gas is to prevent the growth of an oxide film on the surface of a semiconductor wafer when the semiconductor wafer is used as an object to be cleaned. Further, by removing oxygen in the dissolved gas, it is possible to prevent bacteria from being generated in the piping. On the other hand, carbon dioxide gas in the dissolved gas increases the specific resistance of pure water and causes deterioration of the ion exchange resin of the pure water device. Therefore, the burden on the pure water device can be reduced by removing the carbon dioxide gas.
【０００４】しかしながら、前述したような脱気した純
水を洗浄液として用いると、洗浄槽内で高周波音波の振
動モードが変化し、洗浄されるべき被洗浄物が逆に汚染
されるという現象が頻繁に発生するという問題があっ
た。However, when the degassed pure water as described above is used as a cleaning liquid, the vibration mode of high-frequency sound waves changes in the cleaning tank, and the phenomenon that the object to be cleaned is contaminated on the contrary often occurs. There was a problem that occurs.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、洗浄槽内の
洗浄液に浸漬した被洗浄物を高周波音波により洗浄する
際の逆汚染等を防止することが可能な高周波洗浄装置を
提供しようとするものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a high-frequency cleaning apparatus capable of preventing reverse contamination or the like when cleaning an object to be cleaned immersed in a cleaning solution in a cleaning tank by high-frequency sound waves. Things.
【０００６】[0006]
【課題を解決するための手段】本発明に係わる高周波洗
浄装置は、被洗浄物に対して洗浄を施す洗浄液が収容さ
れた洗浄槽と、前記洗浄液に高周波音波を付与する高周
波音波付与手段とを具備した高周波洗浄装置において、
溶存ガス濃度が制御された洗浄液を生成する洗浄液生成
手段を前記洗浄槽に連結することを特徴とするものであ
る。A high-frequency cleaning apparatus according to the present invention comprises: a cleaning tank containing a cleaning liquid for cleaning an object to be cleaned; and a high-frequency sound wave applying means for applying high-frequency sound waves to the cleaning liquid. In the equipped high frequency cleaning device,
A cleaning liquid generating means for generating a cleaning liquid having a controlled dissolved gas concentration is connected to the cleaning tank.
【０００７】本発明の超音波洗浄装置において、洗浄液
生成手段で脱気した純水中に溶存させるガスとしては窒
素、アルゴン、ヘリウムおよびネオンから選ばれる少な
くとも１種が用いられる。これらのガスは、脱気した純
水中に５ｐｐｍ以上、より好ましくは１０ｐｐｍ以上溶
解されることが望ましい。In the ultrasonic cleaning apparatus of the present invention, at least one selected from the group consisting of nitrogen, argon, helium and neon is used as the gas dissolved in the pure water degassed by the cleaning liquid generating means. It is desirable that these gases be dissolved in degassed pure water in an amount of 5 ppm or more, more preferably 10 ppm or more.
【０００８】このような本発明の高周波洗浄装置によれ
ば、洗浄槽内に収容する洗浄液として洗浄液生成手段か
ら供給した溶存ガス濃度が制御されたものを使用するこ
とによって、高周波音波付与手段から前記洗浄槽内の洗
浄液を伝播する高周波音波の振動モードの変化を抑制
し、前記洗浄液内に浸漬した被洗浄物が逆汚染されるの
を回避することができる。このような効果は、明らかで
はないが、次のようなメカニズムによるものと推定され
る。According to the high frequency cleaning apparatus of the present invention, the cleaning liquid contained in the cleaning tank and having a controlled dissolved gas concentration supplied from the cleaning liquid generating means is used, so that the high frequency sound wave applying means can control the high frequency sound wave applying means. A change in the vibration mode of the high-frequency sound wave propagating through the cleaning liquid in the cleaning tank can be suppressed, and the object to be cleaned immersed in the cleaning liquid can be prevented from being reversely contaminated. Such effects are not clear, but are presumed to be due to the following mechanism.
【０００９】すなわち、洗浄槽内に収容する洗浄液とし
て脱気した純水（脱気水）を用い、高周波音波を付与す
ると、前記高周波音波の透過率が上昇する。つまり、洗
浄液中に溶存ガス分が存在しないことで、音波減衰が減
少（音波減衰定数が減少）して透過率が高くなる。例え
ば、洗浄槽の下面から高周波音波を放射すると、前記音
波は洗浄液と外界との界面で反射され、進行波と反射波
による定在波が発生し、洗浄液中に音圧の高い部分と低
い部分とが形成される。このような定在波が洗浄液中に
発生すると、パーティクルは音圧の低い音波ノード部分
（音波の節目）に集まる。また、高周波音波の場合には
例えばメガヘルツの発振周波数で駆動すると、２５℃の
水の音速から算出される半波長（λ／２）は０．７５ｍ
ｍであり、洗浄槽内のパーティクルは０．７５ｍｍ毎の
濃淡に分布することが想像される。定在波が発生する
と、パーティクルは音圧の高い部分には移動できず、音
圧の低い部分を漂う。つまり、洗浄槽内の洗浄液を洗浄
槽上部からオーバーフローさせたとしても実質的に定在
波に起因する集合されたパーティクルを流し出すことが
できない。したがって、高周波音波の付与によって定在
波が発生して洗浄槽においては、槽内全体にパーティク
ルが分布しているため、洗浄中に被洗浄物にパーティク
ルが付着して逆汚染を生じる。That is, when degassed pure water (degassed water) is used as a cleaning liquid contained in the cleaning tank and a high-frequency sound wave is applied, the transmittance of the high-frequency sound wave increases. That is, since there is no dissolved gas in the cleaning liquid, the sound wave attenuation is reduced (the sound wave attenuation constant is reduced), and the transmittance is increased. For example, when a high-frequency sound wave is radiated from the lower surface of the cleaning tank, the sound wave is reflected at an interface between the cleaning liquid and the outside world, and a standing wave due to a traveling wave and a reflected wave is generated. Are formed. When such a standing wave is generated in the cleaning liquid, the particles gather at a sound wave node portion (a sound wave node) having a low sound pressure. In the case of a high-frequency sound wave, for example, when driven at an oscillation frequency of megahertz, a half wavelength (λ / 2) calculated from the sound speed of water at 25 ° C. is 0.75 m.
m, and the particles in the cleaning tank are supposed to be distributed in a density of 0.75 mm. When a standing wave is generated, the particles cannot move to a portion having a high sound pressure but drift in a portion having a low sound pressure. In other words, even if the cleaning liquid in the cleaning tank overflows from the upper part of the cleaning tank, the aggregated particles caused by the standing wave cannot be substantially flowed out. Therefore, a standing wave is generated by the application of the high-frequency sound waves, and particles are distributed in the entire cleaning tank in the cleaning tank. During the cleaning, particles adhere to an object to be cleaned, thereby causing reverse contamination.
【００１０】本発明は、洗浄槽内に収容する洗浄液とし
て洗浄液生成手段から供給した溶存ガス濃度が制御され
た脱気水を使用することによって、前記洗浄槽内に高周
波音波を付与する際、音波は溶存ガスに相当する分、著
しく減少して洗浄液と外界との界面での反射があるが、
界面近傍で止まる。例えば、洗浄水中の窒素の溶存濃度
と前記洗浄液を伝播する高周波音波を音圧センサで検出
した際のセンサ出力との関係については図２のように窒
素の溶存濃度が上昇するに伴って音圧力が低下する。具
体的には、窒素の溶存濃度が１０ｐｐｍを越えると定在
波が発生しない正常モードで洗浄液に高周波音波を付与
することが可能になる。その結果、音波の反射に伴って
定在波が洗浄液に発生するのを回避し、高周波音波の進
行波だけで洗浄液中に浸漬された被洗浄物、例えばウェ
ハを洗浄できるため、洗浄液中のパーティクルもその進
行波によって排出できる。したがって、逆汚染を生じる
ことなくウェハを精密洗浄することができる。The present invention uses deaerated water having a controlled dissolved gas concentration supplied from a cleaning liquid generating means as a cleaning liquid contained in the cleaning tank. Is significantly reduced by the amount corresponding to the dissolved gas and there is reflection at the interface between the cleaning solution and the outside world,
Stops near the interface. For example, regarding the relationship between the dissolved concentration of nitrogen in the washing water and the sensor output when a high-frequency sound wave propagating through the washing solution is detected by a sound pressure sensor, as shown in FIG. 2, the sound pressure increases as the dissolved concentration of nitrogen increases. Decrease. Specifically, when the dissolved nitrogen concentration exceeds 10 ppm, high-frequency sound waves can be applied to the cleaning liquid in a normal mode in which a standing wave is not generated. As a result, it is possible to prevent the standing wave from being generated in the cleaning liquid due to the reflection of the sound wave, and to clean the object to be cleaned immersed in the cleaning liquid, for example, the wafer, using only the traveling wave of the high-frequency sound wave. Can also be discharged by the traveling wave. Therefore, the wafer can be precisely cleaned without causing reverse contamination.
【００１１】[0011]
【実施例】以下、本発明の好ましい実施例を図１を参照
して詳細に説明する。図１は、高周波洗浄装置を示す概
略断面図である。洗浄槽１は、下部付近に振動板２が配
置され、前記振動板２を底とする上部側には洗浄液３が
収容されている。振動子４は、前記振動板２の下面に取
り付けられている。高周波発振器５は、前記振動子４に
接続されている。オーバーフロー部６は、前記洗浄槽１
の下部周囲に配置され、かつ底部にはドレイン管７が連
結されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described below in detail with reference to FIG. FIG. 1 is a schematic sectional view showing a high frequency cleaning device. The cleaning tank 1 has a vibration plate 2 disposed near a lower portion, and a cleaning liquid 3 is accommodated in an upper portion having the vibration plate 2 as a bottom. The vibrator 4 is attached to the lower surface of the diaphragm 2. The high-frequency oscillator 5 is connected to the vibrator 4. The overflow part 6 is provided for the cleaning tank 1.
And a drain tube 7 is connected to the bottom.
【００１２】脱気した純水を供給するための純水供給管
８は、洗浄液生成手段である洗浄液生成塔９の下部に連
結されている。前記洗浄液生成塔９は、例えば微細な孔
が多数開口されたポリテトラフルオロエチレンからなる
中空糸が上下方向に多数配列して内蔵されている。窒素
導入管１０は、前記洗浄液生成塔９に連結され、前記供
給管１０から供給された窒素は前記洗浄液生成塔９内部
の多数の中空糸間を流通した後に排気管１１から排出さ
れる。つまり、前記純水供給管８から脱気した純水を前
記洗浄液生成塔９内の多数の中空糸内に供給すると共
に、窒素導入管１０から窒素を所定の圧力で前記生成塔
９に導入すると、窒素は前記中空糸の微細な孔を通して
中空糸内を流通する純水に溶解されて所定濃度の窒素を
溶存した洗浄液が生成される。洗浄液供給管１２は、一
端が前記生成塔９の上部に連結され、他端が前記洗浄槽
１の上方に位置する。A pure water supply pipe 8 for supplying degassed pure water is connected to a lower portion of a cleaning liquid generating tower 9 which is a cleaning liquid generating means. The washing liquid generating tower 9 has a large number of hollow fibers made of, for example, polytetrafluoroethylene having a large number of fine holes formed therein and arranged vertically. The nitrogen introduction pipe 10 is connected to the cleaning liquid generation tower 9, and the nitrogen supplied from the supply pipe 10 is discharged from the exhaust pipe 11 after flowing between a number of hollow fibers inside the cleaning liquid generation tower 9. In other words, when pure water degassed from the pure water supply pipe 8 is supplied into a number of hollow fibers in the cleaning liquid generation tower 9 and nitrogen is introduced into the generation tower 9 from the nitrogen introduction pipe 10 at a predetermined pressure. Nitrogen is dissolved in pure water flowing through the hollow fiber through the fine holes of the hollow fiber to produce a cleaning solution in which a predetermined concentration of nitrogen is dissolved. The cleaning liquid supply pipe 12 has one end connected to the upper part of the production tower 9 and the other end positioned above the cleaning tank 1.
【００１３】次に、前述した超音波洗浄装置の作用を説
明する。被洗浄物、例えば図示しないカセットに複数収
容された半導体ウェハ１３をカセット毎、洗浄槽１内に
浸漬する。純水供給管８から脱気した純水を洗浄液生成
塔９内の多数の中空糸内に供給し、同時に窒素導入管１
０から窒素を所定の圧力で前記生成塔９に導入して排気
管１０から排気する。このような純水の供給および窒素
の導入において、窒素は前記中空糸の微細な孔を通して
中空糸内を流通する純水に溶解されて所定濃度の窒素が
溶存した洗浄液が生成される。この洗浄液を洗浄液供給
管１２を通して前記洗浄槽１に供給すると共にその上端
からオーバーフローさせ、オーバーフロー部６およびド
レイン管７を通して排出する。Next, the operation of the above-described ultrasonic cleaning apparatus will be described. An object to be cleaned, for example, a plurality of semiconductor wafers 13 housed in a cassette (not shown) is immersed in the cleaning tank 1 for each cassette. Pure water degassed from the pure water supply pipe 8 is supplied into a large number of hollow fibers in the washing liquid generation tower 9, and the nitrogen introduction pipe 1
From 0, nitrogen is introduced into the production tower 9 at a predetermined pressure and exhausted from the exhaust pipe 10. In the supply of pure water and the introduction of nitrogen, nitrogen is dissolved in pure water flowing through the hollow fiber through the fine holes of the hollow fiber to generate a cleaning solution in which a predetermined concentration of nitrogen is dissolved. The cleaning liquid is supplied to the cleaning tank 1 through the cleaning liquid supply pipe 12, overflows from the upper end thereof, and is discharged through the overflow section 6 and the drain pipe 7.
【００１４】このように前記洗浄槽１を所定濃度の窒素
が溶解された洗浄液３で満たした後、高周波発振器５に
より前記洗浄槽１の振動板２下面に取り付けた振動子４
を駆動して前記振動板２から前記洗浄槽１内の洗浄液３
に例えば０．７〜５ＭＨｚの高周波音波を放射する。高
周波音波を前記洗浄液３に放射する際、前記洗浄液３中
には所定濃度の窒素が溶存し、その溶存窒素により音波
減少がなされるため、洗浄液３の水面と外界との境界で
の音波の反射に伴なう定在波の発生を回避できる。その
結果、前記振動板２を振動させて前記洗浄液３に高周波
音波を伝播する際、前記高周波音波の進行波のみで前記
洗浄液３中に浸漬されたウェハ１３表面を洗浄し、ウェ
ハ１３表面から除去されたパーティクルもその進行波に
よって水面に浮上でき、洗浄液３と共にオーバーフロー
部６、ドレイン管７を通して排出することができる。After the cleaning tank 1 is filled with the cleaning liquid 3 in which nitrogen of a predetermined concentration is dissolved, a vibrator 4 attached to the lower surface of the vibration plate 2 of the cleaning tank 1 by a high-frequency oscillator 5.
To drive the cleaning liquid 3 in the cleaning tank 1 from the diaphragm 2
For example, a high-frequency sound wave of 0.7 to 5 MHz is radiated. When high-frequency sound waves are radiated to the cleaning liquid 3, a predetermined concentration of nitrogen is dissolved in the cleaning liquid 3, and the dissolved nitrogen reduces sound waves. Therefore, reflection of sound waves at the boundary between the water surface of the cleaning liquid 3 and the outside world. The generation of a standing wave accompanying the above can be avoided. As a result, when the vibration plate 2 is vibrated to transmit the high-frequency sound wave to the cleaning liquid 3, the surface of the wafer 13 immersed in the cleaning liquid 3 is cleaned only by the traveling wave of the high-frequency sound wave and removed from the surface of the wafer 13. The generated particles can also float on the water surface due to the traveling wave, and can be discharged together with the cleaning liquid 3 through the overflow section 6 and the drain pipe 7.
【００１５】したがって、本発明の超音波洗浄装置は高
周波音波の伝播時における定在波の発生を回避できるた
め、定在波に起因する逆汚染を生じることなくウェハ１
３を精密洗浄することができる。Therefore, the ultrasonic cleaning apparatus of the present invention can avoid the generation of standing waves during the propagation of high-frequency sound waves, so that the wafer 1 can be prevented from being contaminated due to the standing waves.
3 can be precision cleaned.
【００１６】なお、前記実施例では洗浄液生成手段によ
り脱気した純水に窒素を溶存させたが、洗浄液生成手段
においてアルゴン、ヘリウムおよびネオンから選ばれる
少なくとも１種のガスを脱気した純水に溶存させ、これ
を洗浄槽内に洗浄液として供給しても実施例と同様に半
導体ウェハ表面を精密洗浄することができる。In the above embodiment, nitrogen was dissolved in the pure water degassed by the cleaning liquid generating means, but at least one gas selected from argon, helium and neon was added to the pure water degassed by the cleaning liquid generating means. Even when the semiconductor wafer is dissolved and supplied as a cleaning liquid into the cleaning tank, the semiconductor wafer surface can be precisely cleaned in the same manner as in the embodiment.
【００１７】前記実施例では、振動板を洗浄槽の底部に
直接設置した高周波洗浄装置について説明したが、これ
に限定されない。例えば、伝播水が収容された外槽と、
前記外槽内に底部が前記外槽底部から所望の距離隔てる
ように収納され、内部に脱気した純水に窒素のような所
定のガスを溶解した洗浄液が収容された洗浄槽と、前記
外槽の底部に配置され、前記伝播水を通して前記洗浄液
に高周波音波を付与する振動板と、前記振動板に取着さ
れた振動子と、この振動子を駆動するため高周波発振器
と、前記洗浄槽に連結され、溶存ガス濃度が制御された
洗浄液を生成する洗浄液生成手段とから高周波洗浄装置
を構成してもよい。In the above-described embodiment, the high-frequency cleaning device in which the diaphragm is directly installed on the bottom of the cleaning tank is described, but the present invention is not limited to this. For example, an outer tank containing propagation water,
A cleaning tank in which a bottom is housed in the outer tank at a desired distance from the bottom of the outer tank, and a cleaning liquid in which a predetermined gas such as nitrogen is dissolved in degassed pure water is stored; A vibration plate that is arranged at the bottom of the tank and applies high-frequency sound waves to the cleaning liquid through the propagation water, a vibrator attached to the vibration plate, a high-frequency oscillator for driving the vibrator, and the cleaning tank A high-frequency cleaning device may be configured by a cleaning liquid generating unit that is connected to generate a cleaning liquid having a controlled dissolved gas concentration.
【００１８】前記実施例では、洗浄液として純水を用い
たが、アンモニア水溶液と過酸化水素水との混合溶液
や、塩酸と過酸化水素水との混合溶液等の薬液を用いて
もよい。Although pure water is used as the cleaning liquid in the above embodiment, a chemical solution such as a mixed solution of an aqueous ammonia solution and aqueous hydrogen peroxide or a mixed solution of hydrochloric acid and aqueous hydrogen peroxide may be used.
【００１９】[0019]
【発明の効果】以上詳述したように、本発明によれば洗
浄槽内の洗浄液に浸漬した被洗浄物を高周波音波により
洗浄する際、逆汚染等を防止して精密洗浄を行うことが
でき、ひいては半導体装置、液晶表示装置や磁気ディス
クの製造等の洗浄工程に有効に適用することが可能な高
周波洗浄装置を提供することができる。As described above in detail, according to the present invention, when cleaning the object to be cleaned immersed in the cleaning solution in the cleaning tank by high frequency sound waves, it is possible to prevent reverse contamination and perform precision cleaning. In addition, it is possible to provide a high-frequency cleaning device that can be effectively applied to a cleaning process such as manufacturing of a semiconductor device, a liquid crystal display device, or a magnetic disk.
【図１】本発明に係わる高周波洗浄装置を示す概略断面
図。FIG. 1 is a schematic sectional view showing a high frequency cleaning device according to the present invention.
【図２】本発明に係わる高周波洗浄装置において、洗浄
液中の窒素（Ｎ2 ）の溶存濃度と前記洗浄液を伝播する
高周波音波を音圧センサで検出した際のセンサ出力との
関係を示す特性図。FIG. 2 is a characteristic diagram showing a relationship between a dissolved concentration of nitrogen (N 2 ) in the cleaning liquid and a sensor output when a high-frequency sound wave propagating in the cleaning liquid is detected by a sound pressure sensor in the high-frequency cleaning apparatus according to the present invention. .
１…洗浄槽、 ２…振動板、 ３…洗浄液、 ４…振動子、 ９…洗浄液生成塔、 １３…半導体ウェハ。 DESCRIPTION OF SYMBOLS 1 ... Cleaning tank, 2 ... Vibrating plate, 3 ... Cleaning liquid, 4 ... Vibrator, 9 ... Cleaning liquid generation tower, 13 ... Semiconductor wafer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 西澤 久雄 滋賀県野洲郡野洲町大字三上字口ノ川原 2426番１大日本スクリーン製造株式会社野 洲事業所内 (72)発明者 内田 博章 滋賀県野洲郡野洲町大字三上字口ノ川原 2426番１大日本スクリーン製造株式会社野 洲事業所内 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Hisao Nishizawa Yasu-cho, Yasu-machi, Yasu-gun, Shiga Prefecture 2426-1 Daino Screen Manufacturing Co., Ltd. Yasu Office (72) Inventor Hiroaki Uchida Yasu, Shiga Prefecture 2426-1, Dainippon Screen Mfg. Co., Ltd. Yasu Office
Claims (2)
容された洗浄槽と、前記洗浄液に高周波音波を付与する
高周波音波付与手段とを具備した高周波洗浄装置におい
て、 溶存ガス濃度が制御された洗浄液を生成する洗浄液生成
手段を前記洗浄槽に連結することを特徴とする高周波洗
浄装置。1. A high-frequency cleaning apparatus comprising: a cleaning tank containing a cleaning liquid for cleaning an object to be cleaned; and high-frequency sound wave applying means for applying high-frequency sound waves to the cleaning liquid, wherein a dissolved gas concentration is controlled. A high frequency cleaning apparatus, wherein a cleaning liquid generating means for generating the cleaning liquid is connected to the cleaning tank.
ン、ヘリウムおよびネオンから選ばれる少なくとも１種
のガスを脱気した純水に溶存させる機能を有することを
特徴とする請求項１記載の高周波洗浄装置。2. The high frequency cleaning according to claim 1, wherein the cleaning liquid generating means has a function of dissolving at least one gas selected from nitrogen, argon, helium, and neon in degassed pure water. apparatus.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8264175A JPH10109072A (en) | 1996-10-04 | 1996-10-04 | High frequency washing device |
| KR1019970050568A KR19980032449A (en) | 1996-10-04 | 1997-09-30 | Ultrasonic cleaning apparatus and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8264175A JPH10109072A (en) | 1996-10-04 | 1996-10-04 | High frequency washing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10109072A true JPH10109072A (en) | 1998-04-28 |
Family
ID=17399512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8264175A Pending JPH10109072A (en) | 1996-10-04 | 1996-10-04 | High frequency washing device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH10109072A (en) |
| KR (1) | KR19980032449A (en) |
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-
1996
- 1996-10-04 JP JP8264175A patent/JPH10109072A/en active Pending
-
1997
- 1997-09-30 KR KR1019970050568A patent/KR19980032449A/en not_active Application Discontinuation
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Also Published As
| Publication number | Publication date |
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| KR19980032449A (en) | 1998-07-25 |
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