JPH10102234A - Sputtering device and formation of coating using this device - Google Patents
Sputtering device and formation of coating using this deviceInfo
- Publication number
- JPH10102234A JPH10102234A JP25430696A JP25430696A JPH10102234A JP H10102234 A JPH10102234 A JP H10102234A JP 25430696 A JP25430696 A JP 25430696A JP 25430696 A JP25430696 A JP 25430696A JP H10102234 A JPH10102234 A JP H10102234A
- Authority
- JP
- Japan
- Prior art keywords
- shield
- shields
- film
- target
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体電子部品な
どの製造工程において、基板上に薄膜を形成するための
スパッタ装置及び該装置を用いた成膜方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for forming a thin film on a substrate in a process of manufacturing a semiconductor electronic component or the like, and a film forming method using the apparatus.
【０００２】[0002]
【従来の技術】従来、スパッタ装置は、成膜すべき基板
からの放出ガスを減少させ且つ該基板と成膜物質との密
着性を向上させるため、３００℃程度に基板を加熱する
ための加熱・温度制御手段を有し、また装置全体を収納
している真空容器の周辺にスパッタ膜が付着するのを防
止するための防着シールドや、ターゲット部の電界を補
正して異常放電を防ぐターゲットシールドを設ける構成
が一般的である。また、基板１枚ごとに、成膜工程が終
了すると、排気系は連続動作させるものの、加熱手段は
一旦停止し、次の基板の成膜に備えるのが普通である。2. Description of the Related Art Conventionally, a sputtering apparatus has been used to heat a substrate to about 300 ° C. in order to reduce outgassing from a substrate on which a film is to be formed and to improve adhesion between the substrate and a film-forming substance. A target having temperature control means and a deposition prevention shield for preventing a sputtered film from adhering to the periphery of a vacuum vessel accommodating the entire apparatus, and a target for correcting an electric field of a target portion and preventing abnormal discharge. A configuration in which a shield is provided is general. When the film forming process is completed for each substrate, the exhaust system is continuously operated, but the heating means is temporarily stopped to prepare for the film formation of the next substrate.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
スパッタ装置では、防着シールドやターゲットシールド
に付着したスパッタ膜が剥れてきて、成膜中の基板に付
着し、歩留を低下させるという問題があった。この問題
を防止するためには、シールド類を交換するメンテナン
ス間隔を短く設定する必要があった。However, the conventional sputtering apparatus has a problem that the sputtered film adhered to the deposition shield or the target shield comes off and adheres to the substrate being formed, thereby lowering the yield. was there. In order to prevent this problem, it is necessary to set a short maintenance interval for replacing the shields.
【０００４】本発明の目的は、上記問題を解決し、歩留
良く成膜することにあり、メンテナンス間隔を伸ばし
て、生産効率を高めることにある。[0004] An object of the present invention is to solve the above-mentioned problems and to form a film with a high yield, and to increase the maintenance interval to increase the production efficiency.
【０００５】[0005]
【課題を解決するための手段】本発明の第１は、排気
系、ガス導入系を備えた真空系に、基板ホルダー、基板
加熱手段、スパッタ電極、防着シールド、ターゲットシ
ールドを備えたスパッタ装置であって、上記防着シール
ド及びターゲットシールドにそれぞれ加熱・温度制御手
段を付したことを特徴とするスパッタ装置である。A first object of the present invention is to provide a sputtering system having a substrate holder, a substrate heating means, a sputter electrode, a deposition shield, and a target shield in a vacuum system having an exhaust system and a gas introduction system. And a heating / temperature control means is provided for each of the deposition shield and the target shield.
【０００６】また本発明の第２は、上記防着シールド及
びターゲットシールドに、電位制御手段を付したスパッ
タ装置を提供する。A second aspect of the present invention is to provide a sputtering apparatus in which a potential control means is provided on the above-mentioned deposition shield and target shield.
【０００７】さらに本発明は、上記第１のスパッタ装置
を用い、上記防着シールト及びターゲットシールドをそ
れぞれ常時加熱しながら連続して複数枚の基板に結晶物
質を成膜することを特徴とする成膜方法、或いは、上記
第２のスパッタ装置を用い、上記防着シールド及びター
ゲットシールド常時加熱すると同時に少なくとも成膜時
には負の電位に制御して連続して複数枚の基板に結晶物
質を成膜することを特徴とする成膜方法を提供するもの
である。Further, the present invention is characterized in that the first sputter apparatus is used to continuously form a crystalline material on a plurality of substrates while constantly heating the deposition shield and the target shield. Using the film method or the second sputtering device, the deposition shield and the target shield are constantly heated and at the same time, at least at the time of film formation, a negative potential is controlled to continuously form a crystal material on a plurality of substrates. It is intended to provide a film forming method characterized by the above.
【０００８】さらにまた、本発明は、上記第１又は第２
のスパッタ装置を用いた非晶質物質の成膜方法であっ
て、１枚の基板の成膜工程を終える毎に、上記防着シー
ルド及びターゲットシールドを加熱し、当該シールドに
付着した非晶質物質を結晶化させることを特徴とする成
膜方法である。Further, the present invention relates to the above-mentioned first or second aspect.
A method of depositing an amorphous substance using a sputtering apparatus, wherein the deposition shield and the target shield are heated each time the deposition process of one substrate is completed, and the amorphous adhered to the shield is heated. A film formation method characterized by crystallizing a substance.
【０００９】[0009]
【発明の実施の形態】成膜工程が進むに連れて、スパッ
タされた物質は防着シールドやターゲットシールドに付
着する。この時、シールド類はプラズマや基板を加熱し
ているヒーターからの輻射により温度が上昇している。
従って、成膜工程が完了してヒーター類の電源が切られ
ると、シールド類への輻射もなくなり、該シールド類の
温度は低下する。すると、シールド類とその表面に付着
した膜との膨張係数が異なるために、成膜後の温度低下
によって両者の収縮量に差が生じ、該膜がシールド類か
ら剥れ、該膜が基板に付着してパターン不良やショート
の原因となり、製品の歩留まりを低下させる。この付着
物を一般にパーティクルと呼び、このパーティクルが増
加して歩留が低下する前にシールド類は交換される。DESCRIPTION OF THE PREFERRED EMBODIMENTS As a film forming process proceeds, a sputtered substance adheres to a deposition shield or a target shield. At this time, the temperature of the shields has risen due to plasma or radiation from a heater that heats the substrate.
Therefore, when the power of the heaters is turned off after the film forming process is completed, the radiation to the shields is also eliminated, and the temperature of the shields decreases. Then, since the coefficients of expansion of the shields and the film attached to the surface thereof are different, a difference in shrinkage occurs between the shields due to a decrease in temperature after the film formation, and the film peels off from the shields, and the film adheres to the substrate. They adhere and cause pattern defects and short-circuits, lowering the product yield. The deposits are generally called particles, and the shields are replaced before the particles increase and the yield decreases.
【００１０】本発明においては、上記シールド類に加熱
・温度制御手段を付して常時シールド類を加熱すること
により、シールドの温度変動をなくし、膨張係数の異な
る付着膜の剥れを防止して、パーティクルの増加を抑制
し、よって、シールドの交換時期を伸ばすことができる
のである。In the present invention, the shields are provided with heating / temperature control means to constantly heat the shields, thereby eliminating temperature fluctuations of the shields and preventing peeling of the adhered films having different expansion coefficients. Therefore, it is possible to suppress the increase of particles, and to extend the time for replacing the shield.
【００１１】さらに本発明においては、シールド類に電
位制御手段を付して電位を制御することにより、付着膜
のシールド類への密着性を高め、さらにその剥れを抑制
することができる。Further, in the present invention, by applying a potential control means to the shields to control the potential, the adhesion of the adhered film to the shields can be enhanced and the peeling thereof can be suppressed.
【００１２】また、本発明では、低温で形成するために
剥れ易い非晶質物質の成膜を行う際には、成膜工程完了
後に、シールド類を加熱して該シールド表面に付着した
非晶質物質からなる膜を結晶化させ、シールド類への密
着性を高めてその剥れを抑制する。Further, in the present invention, when forming a film of an amorphous substance which is easily peeled off at a low temperature, after the film forming step is completed, the shields are heated to remove the non-adhered material adhered to the shield surface. The film made of a crystalline material is crystallized to enhance the adhesion to shields and to suppress the peeling.
【００１３】本発明の実施の形態を、ＩＴＯ（酸化イン
ジウム・スズ）を成膜する工程を例に挙げて説明する。An embodiment of the present invention will be described with reference to an example of a process of forming a film of ITO (indium tin oxide).
【００１４】図１に本発明第１のスパッタ装置の模式図
を示す。図中、１は不図示の排気系及びガス導入系を有
し、該導入系よりガスを導入してプラズマ放電を行わせ
るための真空容器、２はターゲット、３はターゲット２
からスパッタされた物質を成膜するための基板、４は基
板３を固定するための基板ホルダー、５は基板加熱用の
加熱ヒーター、６はターゲット２の電界を補正し異常放
電を防ぐためのターゲットシールド、７は真空容器１の
周辺にスパッタ膜が付着するのを防止するための防着シ
ールド、８は防着シールト及びターゲットシールド加熱
用の加熱ヒーター、９はシールド類の温度を検知するた
めの熱電対、１０は真空容器１内の状態が変動してもシ
ールド６，７の温度を一定に制御するための温度制御ユ
ニット、１１はターゲットに電力を供給するための直流
電源、１２はスパッタ電極である。FIG. 1 is a schematic view of a first sputtering apparatus according to the present invention. In the drawing, reference numeral 1 denotes an exhaust system and a gas introduction system (not shown), and a vacuum vessel for introducing a gas from the introduction system to cause plasma discharge, 2 a target, and 3 a target 2
4 is a substrate holder for fixing the substrate 3, 5 is a heater for heating the substrate, 6 is a target for correcting the electric field of the target 2 and preventing abnormal discharge. Reference numeral 7 denotes a shield for preventing the sputtered film from adhering to the periphery of the vacuum vessel 1. Reference numeral 8 denotes a heater for heating the shield and a target shield. Reference numeral 9 denotes a temperature for detecting the temperature of the shields. A thermocouple 10 is a temperature control unit for controlling the temperature of the shields 6 and 7 to be constant even when the state in the vacuum vessel 1 fluctuates, 11 is a DC power supply for supplying power to a target, and 12 is a sputter electrode. It is.
【００１５】先ず、不図示のロードロック及び搬送機構
により基板３及び基板ホールダー４を真空容器１内に搬
送し、所定の位置にセット後、不図示の排気系（真空ポ
ンプ）により、真空容器１内を１０-5Ｐａ台まで排気す
る。次にスパッタ用ガスを導入し、真空度を０．３〜
１．３Ｐａに制御する。First, the substrate 3 and the substrate holder 4 are transported into the vacuum vessel 1 by a load lock and transport mechanism (not shown), set in a predetermined position, and then evacuated by a vacuum system (vacuum pump) (not shown). The inside is evacuated to the order of 10 -5 Pa. Next, a sputtering gas is introduced, and the degree of vacuum is set to 0.3 to
Control to 1.3 Pa.
【００１６】次に加熱ヒーター３により基板３を２００
℃以上に加熱制御すると同時に、シールド６，７を温度
制御ユニット１０により加熱制御する。この時のシール
ドの温度は、成膜中にプラズマや加熱ヒーター３からの
輻射により上昇する温度以上になるように制御する。Next, the substrate 3 is heated for 200
The heating of the shields 6 and 7 is controlled by the temperature control unit 10 at the same time as the heating is controlled to at least ° C. At this time, the temperature of the shield is controlled so as to be equal to or higher than a temperature that is increased by plasma or radiation from the heater 3 during film formation.
【００１７】温度が安定した後、電源１１によりターゲ
ット面積に対し０．１〜２．０Ｗ／ｃｍ2 の電力を供給
し、スパッタリングを行う。After the temperature is stabilized, a power of 11 to 2.0 W / cm 2 is supplied to the target area from the power supply 11 to perform sputtering.
【００１８】必要な膜厚まで成膜した後、電源１１の電
力を停止するが、シールド６，７の加熱制御はそのまま
次の基板の成膜工程まで継続する。After the film is formed to the required thickness, the power of the power supply 11 is stopped, but the heating control of the shields 6 and 7 is continued until the next substrate film forming step.
【００１９】また、図２は本発明第２のスパッタ装置の
模式図であり、ターゲットシールド６及び防着シールド
７をフローティングにするために、絶縁材１２と、電位
を制御するためのバイアス用電源１３が配されている。
この電源１３により、上記シールド類６，７に−１０〜
−１００Ｖの電位を付与し、スパッタ操作を行うことに
より、シールド類６，７に付着した膜に対しボンバード
効果が生じ、該付着膜の密着性が向上する。FIG. 2 is a schematic view of a second sputtering apparatus according to the present invention. In order to make the target shield 6 and the deposition shield 7 floating, an insulating material 12 and a bias power supply for controlling the potential are used. 13 are arranged.
The power supply 13 allows the shields 6, 7 to be -10 to -10.
By applying a potential of -100 V and performing a sputtering operation, a bombard effect is generated on the films attached to the shields 6 and 7, and the adhesion of the attached films is improved.
【００２０】さらに、本発明のスパッタ装置を用いて、
非晶質ＩＴＯ（アモルファスＩＴＯ）を成膜する際に
は、ヒーター類５，８をオフにして成膜し、成膜完了
後、基板３を取り出した後、ヒーター８によりシールド
類６，７を２００℃以上、３０分以上加熱し、シールド
類６，７に付着した非晶質ＩＴＯ膜を結晶化させる。こ
れにより、シールド類６，７に付着した膜の剥れが抑制
される。Further, using the sputtering apparatus of the present invention,
When the amorphous ITO (amorphous ITO) is formed, the heaters 5 and 8 are turned off to form a film. After the film formation is completed, the substrate 3 is taken out, and the shields 6 and 7 are heated by the heater 8. Heat at 200 ° C. or more for 30 minutes or more to crystallize the amorphous ITO film attached to the shields 6 and 7. Thereby, peeling of the film attached to the shields 6 and 7 is suppressed.
【００２１】[0021]
［実施例１］図１に示すスパッタ装置を用いて結晶ＩＴ
Ｏ膜を成膜した。本実施例においては、基板３としてガ
ラス基板を用い、スパッタ用ガスとしてアルゴンと０．
４％酸素を真空容器１内に導入し、真空度を０．４Ｐａ
とした。また、基板３の温度は２２０℃とし、シールド
類６，７の温度は１５０℃以上に保ち、０．５７Ｗ／ｃ
ｍ2 の電力を供給し、約７０ｎｍ厚の結晶ＩＴＯ膜を形
成した。シールド類６，７の温度は常時１５０℃以上に
保った。この条件で連続して成膜を行ったところ、図３
に示すように、２０００枚の基板を成膜するまでパーテ
ィクルの増加が抑えられた。[Example 1] Crystal IT using the sputtering apparatus shown in FIG.
An O film was formed. In this embodiment, a glass substrate is used as the substrate 3 and argon and 0.1.
4% oxygen is introduced into the vacuum vessel 1 and the degree of vacuum is set to 0.4 Pa
And Further, the temperature of the substrate 3 is set to 220 ° C., the temperature of the shields 6 and 7 is kept at 150 ° C. or more, and 0.57 W / c
A power of m 2 was supplied to form a crystalline ITO film having a thickness of about 70 nm. The temperature of the shields 6 and 7 was always kept at 150 ° C. or higher. When films were continuously formed under these conditions, FIG.
As shown in the figure, the increase of particles was suppressed until 2000 substrates were formed.
【００２２】［比較例１］シールド類６，７の加熱を行
わない以外は実施例１と同様にして結晶ＩＴＯ膜を連続
して成膜した。その結果、図３に示すように、基板１０
００枚程度でパーティクルが増加し、メンテナンスが必
要となった。Comparative Example 1 A crystalline ITO film was continuously formed in the same manner as in Example 1 except that the shields 6 and 7 were not heated. As a result, as shown in FIG.
Particles increased at about 00 sheets, requiring maintenance.
【００２３】［実施例２］図２の装置において、バイア
ス用電源１３によりシールド類６，７の電位を−５０Ｖ
に制御する以外は実施例１と同様にして成膜を行った。
その結果、基板２３００枚までパーティクルの増加が抑
えられた。[Embodiment 2] In the apparatus of FIG. 2, the potential of the shields 6 and 7 is set to -50 V by the bias power supply 13.
The film formation was performed in the same manner as in Example 1 except that the film thickness was controlled.
As a result, an increase in particles was suppressed up to 2,300 substrates.
【００２４】［実施例３］基板３としてガラス基板を用
い、スパッタ用ガスとしてアルゴンと０．４％酸素を導
入し、真空度を０．４Ｐａとし、基板３及びシールド類
６，７は加熱せず、非晶質ＩＴＯ膜を膜厚約７０ｎｍと
なるように成膜した。成膜の完了した基板を取り出した
後、シールド類６，７を２００℃以上、３０分以上加熱
した。この工程を繰り返したところ、基板１０００枚ま
でパーティクルの増加が抑えられた。Example 3 A glass substrate was used as the substrate 3, argon and 0.4% oxygen were introduced as sputtering gases, the degree of vacuum was set to 0.4 Pa, and the substrate 3 and the shields 6, 7 were heated. Instead, an amorphous ITO film was formed to a thickness of about 70 nm. After taking out the substrate on which the film formation was completed, the shields 6 and 7 were heated at 200 ° C. or more for 30 minutes or more. When this process was repeated, the increase in particles was suppressed up to 1000 substrates.
【００２５】また、基板３上に成膜した非晶質ＩＴＯ膜
のスクラッチテスト（針の先端径１０μｍφ）では２５
ｇｆであったが、シールド６，７類に付着したＩＴＯ膜
では７０ｇｆ以上（測定不可のため）となっており、シ
ールド６，７に付着したＩＴＯ膜は密着力が強化されて
剥れにくくなっていることがわかった。In the scratch test of the amorphous ITO film formed on the substrate 3 (needle tip diameter: 10 μmφ), 25
gf, but the ITO film adhering to the shields 6 and 7 is 70 gf or more (because measurement is impossible), and the ITO film adhering to the shields 6 and 7 has enhanced adhesion and is less likely to peel off. I understood that.
【００２６】［比較例２］成膜工程間隙におけるシール
ド類６，７の加熱を行わない以外は実施例３と同様にし
て成膜を行ったところ、シールド類６，７に付着した膜
が剥れ易く、２００枚程度の基板に成膜したところでパ
ーティクルが増加した。[Comparative Example 2] A film was formed in the same manner as in Example 3 except that the shields 6 and 7 were not heated in the film forming process gap. Particles increased when the film was formed on about 200 substrates.
【００２７】[0027]
【発明の効果】以上説明したように、本発明によれば、
ターゲットシールドや防着シールドに付着する膜の剥れ
が抑制されるため、これらシールドの交換時期を伸ばす
ことができ、メンテナンス間隔を長くすることができ
る。よって、メンテナンスのために装置を停止する頻度
が低減し、生産性が向上する。As described above, according to the present invention,
Since the peeling of the film adhering to the target shield and the deposition shield is suppressed, the replacement time of these shields can be extended, and the maintenance interval can be lengthened. Therefore, the frequency of stopping the apparatus for maintenance is reduced, and the productivity is improved.
【００２８】本発明においては、シールド類の加熱時期
を変えることで、結晶物質、非晶質物質のいずれにも対
応することができる。In the present invention, both the crystalline substance and the amorphous substance can be handled by changing the heating time of the shields.
【図１】本発明第１のスパッタ装置の模式図である。FIG. 1 is a schematic view of a first sputtering apparatus of the present invention.
【図２】本発明第２のスパッタ装置の模式図である。FIG. 2 is a schematic view of a second sputtering apparatus of the present invention.
【図３】本発明の実施例１及び比較例１の結果を示す図
である。FIG. 3 is a diagram showing the results of Example 1 and Comparative Example 1 of the present invention.
【符号の説明】 １ 真空容器 ２ ターゲット ３ 基板 ４ 基板ホルダー ５ 基板用加熱ヒーター ６ ターゲットシールド ７ 防着シールド ８ シールド用加熱ヒーター ９ 熱電対 １０ 温度制御ユニット １１ 直流電源 １２ 絶縁材 １３ バイアス用電源[Description of Signs] 1 Vacuum container 2 Target 3 Substrate 4 Substrate holder 5 Substrate heater 6 Target shield 7 Deposition shield 8 Shield heater 9 Thermocouple 10 Temperature control unit 11 DC power supply 12 Insulation material 13 Bias power supply
Claims (5)
基板ホルダー、基板加熱手段、スパッタ電極、防着シー
ルド、ターゲットシールドを備えたスパッタ装置であっ
て、上記防着シールド及びターゲットシールドにそれぞ
れ加熱・温度制御手段を付したことを特徴とするスパッ
タ装置。1. A vacuum system having an exhaust system and a gas introduction system,
What is claimed is: 1. A sputtering apparatus comprising a substrate holder, a substrate heating means, a sputter electrode, a deposition shield, and a target shield, wherein the deposition shield and the target shield are provided with heating and temperature control means, respectively.
ドに、電位制御手段を付したことを特徴とする請求項１
記載のスパッタ装置。2. The apparatus according to claim 1, wherein said deposition shield and said target shield are provided with a potential control means.
The sputtering apparatus as described in the above.
晶物質の成膜方法であって、上記防着シールト及びター
ゲットシールドをそれぞれ常時加熱しながら連続して複
数枚の基板に結晶物質を成膜することを特徴とする成膜
方法。3. A method for forming a crystalline material using a sputtering apparatus according to claim 1, wherein the crystalline material is formed on a plurality of substrates continuously while continuously heating the deposition shield and the target shield. A film forming method characterized by forming a film.
晶物質の成膜方法であって、上記防着シールド及びター
ゲットシールドを常時加熱すると同時に少なくとも成膜
時には負の電位に制御して連続して複数枚の基板に結晶
物質を成膜することを特徴とする成膜方法。4. A method for forming a crystalline substance using a sputtering apparatus according to claim 2, wherein the deposition shield and the target shield are constantly heated and at the same time, at least at the time of film formation, are controlled to have a negative potential. A film of a crystalline substance on a plurality of substrates by using the method.
いた非晶質物質の成膜方法であって、１枚の基板の成膜
工程を終える毎に、上記防着シールド及びターゲットシ
ールドを加熱し、当該シールドに付着した非晶質物質を
結晶化させることを特徴とする成膜方法。5. A method for forming a film of an amorphous material using a sputtering apparatus according to claim 1, wherein the deposition shield and the target shield are replaced each time a film forming process for one substrate is completed. A film forming method characterized by heating to crystallize an amorphous substance attached to the shield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25430696A JPH10102234A (en) | 1996-09-26 | 1996-09-26 | Sputtering device and formation of coating using this device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25430696A JPH10102234A (en) | 1996-09-26 | 1996-09-26 | Sputtering device and formation of coating using this device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10102234A true JPH10102234A (en) | 1998-04-21 |
Family
ID=17263166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25430696A Withdrawn JPH10102234A (en) | 1996-09-26 | 1996-09-26 | Sputtering device and formation of coating using this device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10102234A (en) |
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|---|---|---|---|---|
| JP2006137966A (en) * | 2004-11-10 | 2006-06-01 | Matsushita Electric Ind Co Ltd | Sputtering apparatus and sputtering method |
| WO2007032166A1 (en) * | 2005-09-16 | 2007-03-22 | Asahi Glass Company, Limited | Deposition preventing plate for film forming apparatus, and film forming apparatus |
| KR100955595B1 (en) * | 2001-12-12 | 2010-05-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Film formation apparatus and film formation method and cleaning method |
| WO2012046705A1 (en) * | 2010-10-06 | 2012-04-12 | 株式会社アルバック | Dielectric film formation device and dielectric film formation method |
| CN108573845A (en) * | 2017-03-07 | 2018-09-25 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| JP2020041167A (en) * | 2018-09-06 | 2020-03-19 | 株式会社アルバック | Component for film deposition apparatus and preparation method of film deposition |
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-
1996
- 1996-09-26 JP JP25430696A patent/JPH10102234A/en not_active Withdrawn
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100955595B1 (en) * | 2001-12-12 | 2010-05-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Film formation apparatus and film formation method and cleaning method |
| US7763320B2 (en) | 2001-12-12 | 2010-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and film formation method and cleaning method |
| JP2006137966A (en) * | 2004-11-10 | 2006-06-01 | Matsushita Electric Ind Co Ltd | Sputtering apparatus and sputtering method |
| JP4614220B2 (en) * | 2004-11-10 | 2011-01-19 | パナソニック株式会社 | Sputtering apparatus and sputtering method |
| WO2007032166A1 (en) * | 2005-09-16 | 2007-03-22 | Asahi Glass Company, Limited | Deposition preventing plate for film forming apparatus, and film forming apparatus |
| WO2012046705A1 (en) * | 2010-10-06 | 2012-04-12 | 株式会社アルバック | Dielectric film formation device and dielectric film formation method |
| CN103140601A (en) * | 2010-10-06 | 2013-06-05 | 株式会社爱发科 | Apparatus for forming dielectric thin film and method for forming thin film |
| US9593409B2 (en) | 2010-10-06 | 2017-03-14 | Ulvac, Inc. | Dielectric film forming apparatus and method for forming dielectric film |
| CN108573845A (en) * | 2017-03-07 | 2018-09-25 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN108573845B (en) * | 2017-03-07 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
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| JP2020176280A (en) * | 2019-04-15 | 2020-10-29 | 株式会社アルバック | Film deposition method |
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