JPH09506467A - 針及び隔膜のような抽出電極を有する電子源を具えている粒子−光学装置 - Google Patents
針及び隔膜のような抽出電極を有する電子源を具えている粒子−光学装置Info
- Publication number
- JPH09506467A JPH09506467A JP8511562A JP51156296A JPH09506467A JP H09506467 A JPH09506467 A JP H09506467A JP 8511562 A JP8511562 A JP 8511562A JP 51156296 A JP51156296 A JP 51156296A JP H09506467 A JPH09506467 A JP H09506467A
- Authority
- JP
- Japan
- Prior art keywords
- needle
- extraction electrode
- electron source
- particle
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06341—Field emission
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.*針状の導体(20)と、 *前記針状導体(20)の先端(21)に対向して、該先端から少し離れて 配置される隔膜のような導電性の抽出電極(22)と、 *前記針状導体(20)と前記抽出電極(22)との間に電圧を印加する手 段(24)とを具備した自由電子ビーム(23)発生用の電子源(1)を具えて いる粒子−光学装置において、 *前記隔膜のような抽出電極(22)を完全に閉成し、且つ *前記抽出電極(22)の厚さを、電圧の影響下で前記隔膜上に入射する電 子の実用少量部があらゆる実用目的にとって無視し得るほどに小さいエネルギー 損で前記隔膜をその反対側へと横切るような厚さとする ことを特徴とする粒子−光学装置。 2.前記針状導体(20)と前記抽出電極(22)との間に電圧を印加する手段 (24)を、前記抽出電極(22)の内部電位よりも1mV〜1Vの電圧値だけ 高い値に調整し得るようにしたことを特徴とする請求項1に記載の粒子−光学装 置。 3.前記電子源(1)が、該電子源の動作中に前記針状導体の先端(21)と抽 出電極(22)との間の距離を変える手段(26,28)を具えていることを特 徴とする請求項1又は2に記載の粒子−光学装置。 4.前記電子源(1)が、該電子源の動作中に前記針状導体の先端(21)を前 記抽出電極(22)の表面に対して平行に動かす手段を具えていることを特徴と する請求項1,2及び3のいずれか一項に記載の粒子−光学装置。 5.前記抽出電極(22)を自由電子ビーム(23)操作用の他の粒子−光学素 子(52,54)と機械的に一体としたことを特徴とする請求項1〜4のいずれ か一項に記載の粒子−光学装置。 6.前記抽出電極(22)が真空空所と周囲の環境との間の境界を構成する真空 壁としても作用し、前記針状導体(20)が前記環境内に存在するようにしたこ とを特徴とする請求項1〜5のいずれか一項に記載の粒子−光学装置。 7.前記針状導体(20)と前記抽出電極(22)との間に電圧を印加する前記 手段(24)を、該手段がパルス化電圧を印加するように構成したことを特徴と する請求項1〜6のいずれか一項に記載の粒子−光学装置。 8.請求項1〜7のいずれか一項に記載したような電子源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL94202853.1 | 1994-10-03 | ||
EP94202853 | 1994-10-03 | ||
PCT/IB1995/000798 WO1996010836A1 (en) | 1994-10-03 | 1995-09-26 | Particle-optical apparatus comprising an electron source with a needle and a membrane-like extraction electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09506467A true JPH09506467A (ja) | 1997-06-24 |
JP4093590B2 JP4093590B2 (ja) | 2008-06-04 |
Family
ID=8217251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51156296A Expired - Lifetime JP4093590B2 (ja) | 1994-10-03 | 1995-09-26 | 針及び隔膜のような抽出電極を有する電子源を具えている粒子光学装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5587586A (ja) |
EP (1) | EP0731981B1 (ja) |
JP (1) | JP4093590B2 (ja) |
DE (1) | DE69506375T2 (ja) |
WO (1) | WO1996010836A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011210496A (ja) * | 2010-03-29 | 2011-10-20 | Sii Nanotechnology Inc | 集束イオンビーム装置及びチップ先端構造検査方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5834781A (en) * | 1996-02-14 | 1998-11-10 | Hitachi, Ltd. | Electron source and electron beam-emitting apparatus equipped with same |
JP2939540B2 (ja) * | 1998-01-30 | 1999-08-25 | 科学技術庁金属材料技術研究所長 | パルス励起原子線とパルス紫外光の生成方法およびその装置 |
US6740889B1 (en) * | 1998-09-28 | 2004-05-25 | Applied Materials, Inc. | Charged particle beam microscope with minicolumn |
DE60042679D1 (de) | 2000-03-16 | 2009-09-17 | Hitachi Ltd | Vorrichtung zum Erzeugen eines Stromes von Ladungsträgern |
US6943356B2 (en) * | 2002-01-09 | 2005-09-13 | Biomed Solutions, Llc | Tip for nanoscanning electron microscope |
US6700127B2 (en) * | 2002-01-09 | 2004-03-02 | Biomed Solutions Llc | Point source for producing electrons beams |
US6815688B2 (en) * | 2002-01-09 | 2004-11-09 | Conrad W. Schneiker | Devices for guiding and manipulating electron beams |
AU2003261023A1 (en) * | 2002-08-30 | 2004-03-19 | Stichting Fundementeel Onderzoek Der Materie (Fom) | Device with foil corrector for electron optical aberrations at low energy |
US7279686B2 (en) * | 2003-07-08 | 2007-10-09 | Biomed Solutions, Llc | Integrated sub-nanometer-scale electron beam systems |
EP1826809A1 (en) * | 2006-02-22 | 2007-08-29 | FEI Company | Particle-optical apparatus equipped with a gas ion source |
US9873090B2 (en) * | 2009-06-17 | 2018-01-23 | The Regents Of The University Of California | Apparatus and method for nanoporous inorganic membranes and films, methods of making and usage thereof |
JP5452722B2 (ja) * | 2010-07-27 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | 収差補正装置およびそれを用いた荷電粒子線装置 |
US10497541B2 (en) * | 2016-05-19 | 2019-12-03 | Nedal Saleh | Apparatus and method for programmable spatially selective nanoscale surface functionalization |
US9941094B1 (en) | 2017-02-01 | 2018-04-10 | Fei Company | Innovative source assembly for ion beam production |
US11869743B2 (en) * | 2021-05-11 | 2024-01-09 | Kla Corporation | High throughput multi-electron beam system |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3665241A (en) * | 1970-07-13 | 1972-05-23 | Stanford Research Inst | Field ionizer and field emission cathode structures and methods of production |
US4427886A (en) * | 1982-08-02 | 1984-01-24 | Wisconsin Alumni Research Foundation | Low voltage field emission electron gun |
EP0196710A1 (en) * | 1985-03-28 | 1986-10-08 | Koninklijke Philips Electronics N.V. | Electron beam apparatus comprising an anode which is included in the cathode/Wehnelt cylinder unit |
DE3677062D1 (de) * | 1985-06-04 | 1991-02-28 | Denki Kagaku Kogyo Kk | Quelle geladener teilchen. |
JPH0758164B2 (ja) * | 1988-04-22 | 1995-06-21 | 三菱電機株式会社 | 走査型トンネル顕微鏡の微動機構 |
EP0366851B1 (en) * | 1988-11-01 | 1994-02-16 | International Business Machines Corporation | Low-voltage source for narrow electron/ion beams |
DE68917310T2 (de) * | 1989-12-13 | 1995-03-09 | Ibm | Delta-phi-Mikrolinse für Teilchenstrahlen niedriger Energie. |
DE69322890T2 (de) * | 1992-02-12 | 1999-07-29 | Koninkl Philips Electronics Nv | Verfahren zur Verringerung einer räumlichen energiedispersiven Streuung eines Elektronenstrahlenbündels und eine für den Einsatz eines solchen Verfahrens geeignete Elektronenstrahlvorrichtung |
-
1995
- 1995-09-26 WO PCT/IB1995/000798 patent/WO1996010836A1/en active IP Right Grant
- 1995-09-26 EP EP95930694A patent/EP0731981B1/en not_active Expired - Lifetime
- 1995-09-26 DE DE69506375T patent/DE69506375T2/de not_active Expired - Lifetime
- 1995-09-26 JP JP51156296A patent/JP4093590B2/ja not_active Expired - Lifetime
- 1995-10-03 US US08/538,512 patent/US5587586A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011210496A (ja) * | 2010-03-29 | 2011-10-20 | Sii Nanotechnology Inc | 集束イオンビーム装置及びチップ先端構造検査方法 |
Also Published As
Publication number | Publication date |
---|---|
DE69506375T2 (de) | 1999-06-17 |
DE69506375D1 (de) | 1999-01-14 |
EP0731981A1 (en) | 1996-09-18 |
US5587586A (en) | 1996-12-24 |
EP0731981B1 (en) | 1998-12-02 |
JP4093590B2 (ja) | 2008-06-04 |
WO1996010836A1 (en) | 1996-04-11 |
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