JPH0945688A - Interconnection structure and its formation method - Google Patents
Interconnection structure and its formation methodInfo
- Publication number
- JPH0945688A JPH0945688A JP21248095A JP21248095A JPH0945688A JP H0945688 A JPH0945688 A JP H0945688A JP 21248095 A JP21248095 A JP 21248095A JP 21248095 A JP21248095 A JP 21248095A JP H0945688 A JPH0945688 A JP H0945688A
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- Prior art keywords
- film
- wiring
- forming
- protective film
- wiring structure
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本願の発明は、半導体装置中
の配線構造及びその形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring structure in a semiconductor device and a method for forming the same.
【０００２】[0002]
【従来の技術】半導体装置中の配線として、低抵抗で且
つ加工が容易なＡｌ合金を材料とするＡｌ配線が広く使
用されている。しかし、Ａｌ配線はエレクトロマイグレ
ーションやストレスマイグレーションに対する耐性が高
くなく、図５に示す様に、Ａｌ配線１１中で矢印１２方
向のマイグレーションが発生すると、Ａｌ原子の移動元
と移動先とに夫々ボイド１３とヒロック１４とが形成さ
れる。2. Description of the Related Art As an interconnection in a semiconductor device, an Al interconnection made of an Al alloy which has a low resistance and is easily processed is widely used. However, the Al wiring does not have high resistance to electromigration and stress migration, and as shown in FIG. 5, when migration in the direction of arrow 12 occurs in the Al wiring 11, voids 13 are formed at the source and the destination of the Al atom, respectively. And hillocks 14 are formed.
【０００３】そこで、図６に示す様に、積層構造のＡｌ
配線１５も広く使用されている。このＡｌ配線１５は、
高融点金属膜等から成るバリアメタル膜１６とＡｌ合金
膜１７と高融点金属膜等から成るキャップメタル膜１８
とを順次に積層させ、これらの膜を配線のパターンに加
工したものである。Therefore, as shown in FIG. 6, Al having a laminated structure is used.
The wiring 15 is also widely used. This Al wiring 15 is
A barrier metal film 16 made of a refractory metal film or the like, an Al alloy film 17, and a cap metal film 18 made of a refractory metal film or the like
And are sequentially laminated, and these films are processed into a wiring pattern.
【０００４】従って、このＡｌ配線１５では、バリアメ
タル膜１６及びキャップメタル膜１８によって、Ａｌ配
線１５の下方及び上方へのヒロック１４が抑制されてい
る。また、バリアメタル膜１６によってＡｌ合金膜１７
を形成する際の配向性が向上して、マイグレーション自
体も抑制されている。Therefore, in the Al wiring 15, the hillocks 14 below and above the Al wiring 15 are suppressed by the barrier metal film 16 and the cap metal film 18. Further, the barrier metal film 16 is used to form the Al alloy film 17
Orientation at the time of forming is improved, and migration itself is also suppressed.
【０００５】[0005]
【発明が解決しようとする課題】しかし、図６に示した
Ａｌ配線１５でも、側面は高融点金属膜等に覆われてい
ないので、Ａｌ配線１５の側方へのヒロック１４は抑制
することができない。一方、半導体装置の微細化に伴っ
て、Ａｌ配線１１、１５の幅が縮小されると共にＡｌ配
線１１、１５間の距離も縮小されてきている。However, even in the Al wiring 15 shown in FIG. 6, since the side surface is not covered with the refractory metal film or the like, the hillocks 14 to the side of the Al wiring 15 can be suppressed. Can not. On the other hand, with the miniaturization of semiconductor devices, the width of the Al wirings 11 and 15 has been reduced and the distance between the Al wirings 11 and 15 has also been reduced.
【０００６】このため、図５に示す様に、Ａｌ配線１１
で形成されたヒロック１４が、同一層で且つ隣接してい
るＡｌ配線１１に到達する可能性が高かった。従って、
これらのＡｌ配線１１間で短絡を生じ易く、従来のＡｌ
配線１１、１５では信頼性が必ずしも高くなかった。For this reason, as shown in FIG.
There is a high possibility that the hillocks 14 formed in 1 will reach the Al wiring 11 adjacent in the same layer. Therefore,
A short circuit is likely to occur between these Al wirings 11 and
The wirings 11 and 15 were not always reliable.
【０００７】[0007]
【課題を解決するための手段】請求項１の配線構造は、
配線の形成材料よりも高硬度で且つ高密度の材料から成
る保護膜によって前記配線の側面が覆われていることを
特徴としている。A wiring structure according to claim 1 is
It is characterized in that the side surface of the wiring is covered with a protective film made of a material having a higher hardness and a higher density than the material for forming the wiring.
【０００８】請求項２の配線構造は、請求項１の配線構
造において、前記保護膜が導電膜であることを特徴とし
ている。A wiring structure according to a second aspect is the wiring structure according to the first aspect, wherein the protective film is a conductive film.
【０００９】請求項３の配線構造の形成方法は、配線の
パターニング後に、この配線の形成材料よりも高硬度で
且つ高密度の材料から成る保護膜を前記配線の側面に形
成する工程を具備することを特徴としている。According to a third aspect of the present invention, there is provided a method of forming a wiring structure, which comprises, after patterning the wiring, forming a protective film made of a material having a higher hardness and a higher density than a material for forming the wiring on a side surface of the wiring. It is characterized by that.
【００１０】請求項４の配線構造の形成方法は、請求項
３の配線構造の形成方法において、前記保護膜として導
電膜を用いることを特徴としている。According to a fourth aspect of the present invention, there is provided a wiring structure forming method according to the third aspect, wherein a conductive film is used as the protective film.
【００１１】請求項５の配線構造の形成方法は、請求項
３の配線構造の形成方法において、窒素を含む雰囲気中
または酸素を含む雰囲気中で前記配線にプラズマ処理を
施して、前記保護膜を形成することを特徴としている。According to a fifth aspect of the present invention, there is provided a method of forming a wiring structure according to the third aspect, wherein the wiring is subjected to plasma treatment in an atmosphere containing nitrogen or an atmosphere containing oxygen to form the protective film. It is characterized by forming.
【００１２】請求項６の配線構造の形成方法は、請求項
５の配線構造の形成方法において、前記配線のパターニ
ングと前記プラズマ処理とを同一の反応室内で行うこと
を特徴としている。According to a sixth aspect of the present invention, there is provided a wiring structure forming method according to the fifth aspect, wherein the patterning of the wiring and the plasma treatment are performed in the same reaction chamber.
【００１３】請求項７の配線構造の形成方法は、請求項
３の配線構造の形成方法において、窒素を含む雰囲気中
または酸素を含む雰囲気中で前記配線に熱処理を施し
て、前記保護膜を形成することを特徴としている。A method of forming a wiring structure according to a seventh aspect is the method of forming a wiring structure according to the third aspect, wherein the wiring is heat-treated in an atmosphere containing nitrogen or an atmosphere containing oxygen to form the protective film. It is characterized by doing.
【００１４】請求項８の配線構造の形成方法は、請求項
３の配線構造の形成方法において、前記配線に窒素また
は酸素をイオン注入して、前記保護膜を形成することを
特徴としている。The method for forming a wiring structure according to an eighth aspect is the method for forming a wiring structure according to the third aspect, characterized in that nitrogen or oxygen is ion-implanted into the wiring to form the protective film.
【００１５】請求項９の配線構造の形成方法は、請求項
３の配線構造の形成方法において、前記配線の側面に側
壁状の前記保護膜を形成することを特徴としている。The method of forming a wiring structure according to a ninth aspect is the method of forming a wiring structure according to the third aspect, characterized in that the side wall-shaped protective film is formed on a side surface of the wiring.
【００１６】本願の発明による配線構造及びその形成方
法では、配線の形成材料よりも高硬度で且つ高密度の材
料から成る保護膜によって配線の側面を覆っているの
で、配線の側方へのヒロックを抑制して同一層の配線間
における短絡を防止することができる。In the wiring structure and the method for forming the wiring according to the present invention, since the side surface of the wiring is covered with the protective film made of a material having a higher hardness and a higher density than the material for forming the wiring, hillocks to the side of the wiring are formed. Can be suppressed to prevent a short circuit between wirings in the same layer.
【００１７】また、配線の側面を覆う保護膜を導電膜に
すれば、ボイド等によって配線が断線しても、保護膜が
電流のバイパスになる。If the protective film covering the side surface of the wiring is a conductive film, the protective film serves as a current bypass even if the wiring is broken due to voids or the like.
【００１８】また、配線のパターニングと配線の側面を
覆う保護膜を形成するためのプラズマ処理とを同一の反
応室内で行えば、製造装置及び製造装置間の搬送工程が
少なくなる。Further, if the patterning of the wiring and the plasma treatment for forming the protective film covering the side surface of the wiring are carried out in the same reaction chamber, the number of manufacturing apparatuses and the steps of carrying between the manufacturing apparatuses can be reduced.
【００１９】[0019]
【発明の実施の形態】以下、本願の発明の第１〜第４具
体例を、図１〜４を参照しながら説明する。図１が、第
１具体例を示している。この第１具体例では、図１
（ａ）に示す様に、ＳｉＯ2 膜２１等の層間絶縁膜上
に、バリアメタル膜であり膜厚が１００ｎｍであるＴｉ
Ｎ膜２２と、０．５％のＣｕを含有しており膜厚が５０
０ｎｍであるＡｌＣｕ膜２３と、キャップメタル膜であ
り膜厚が１００ｎｍであるＴｉＮ膜２４とを、スパッタ
法で順次に形成する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, first to fourth specific examples of the invention of the present application will be described with reference to FIGS. FIG. 1 shows a first specific example. In this first specific example, FIG.
As shown in (a), a barrier metal film of Ti having a thickness of 100 nm is formed on the interlayer insulating film such as the SiO 2 film 21.
It contains N film 22 and 0.5% Cu and has a film thickness of 50.
An AlCu film 23 having a thickness of 0 nm and a TiN film 24 having a thickness of 100 nm, which is a cap metal film, are sequentially formed by a sputtering method.
【００２０】ＴｉＮ膜２２、２４及びＡｌＣｕ膜２３の
形成条件は、下記の通りである。これらのＴｉＮ膜２
２、２４及びＡｌＣｕ膜２３を形成した後、ＴｉＮ膜２
４上でフォトレジスト２５を配線のパターンに加工す
る。The conditions for forming the TiN films 22, 24 and the AlCu film 23 are as follows. These TiN films 2
After forming 2, 24 and AlCu film 23, TiN film 2
The photoresist 25 is processed into a wiring pattern on the wiring 4.
【００２１】ＴｉＮ膜のスパッタ条件 ガス Ａｒ／Ｎ2 ＝３３／６６ｓｃｃｍ 圧力 ０．４Ｐａ 直流電力 ８ｋＷ 基板加熱温度 ３００℃Sputtering conditions for TiN film Gas Ar / N 2 = 33/66 sccm Pressure 0.4 Pa DC power 8 kW Substrate heating temperature 300 ° C.
【００２２】ＡｌＣｕ膜のスパッタ条件 ガス Ａｒ＝６５ｓｃｃｍ 圧力 ０．２Ｐａ 直流電力 １５ｋＷ 基板加熱温度 ３００℃Sputtering conditions for AlCu film Gas Ar = 65 sccm Pressure 0.2 Pa DC power 15 kW Substrate heating temperature 300 ° C.
【００２３】次に、図１（ｂ）に示す様に、フォトレジ
スト２５をマスクにした下記の条件のＲＩＥで、ＴｉＮ
膜２４、ＡｌＣｕ膜２３及びＴｉＮ膜２２を連続的にエ
ッチングした後、図１（ｃ）に示す様に、灰化によって
フォトレジスト２５を剥離する。そして、図１（ｄ）に
示す様に、上述のＲＩＥ及び灰化を行った反応室のガス
を入れ換え、この反応室内で、下記の条件のプラズマ処
理を行う。Next, as shown in FIG. 1B, TiN is formed by RIE using the photoresist 25 as a mask under the following conditions.
After the film 24, the AlCu film 23, and the TiN film 22 are continuously etched, as shown in FIG. 1C, the photoresist 25 is removed by ashing. Then, as shown in FIG. 1D, the gas in the reaction chamber that has undergone the above RIE and ashing is exchanged, and plasma processing under the following conditions is performed in this reaction chamber.
【００２４】エッチング条件 ガス ＢＣｌ3 ／Ｃｌ2 ＝６０／９０ｓｃｃｍ 圧力 ２Ｐａ 高周波電力 １２００ＷEtching conditions Gas BCl 3 / Cl 2 = 60/90 sccm Pressure 2 Pa High frequency power 1200 W
【００２５】プラズマ処理条件 ガス Ａｒ／Ｎ2 ＝６０／９０ｓｃｃｍ 圧力 ２Ｐａ 高周波電力 １５００ＷPlasma processing conditions Gas Ar / N 2 = 60/90 sccm Pressure 2 Pa High frequency power 1500 W
【００２６】上述のプラズマ処理の結果、図１（ｅ）に
示す様に、ＴｉＮ膜２２、２４から露出しているＡｌＣ
ｕ膜２３の側面に、 ６Ａｌ＋Ｎ2 →３Ａｌ3 Ｎ の反応式によってＡｌ3 Ｎ膜２６が形成されて、積層構
造のＡｌ配線２７が完成する。As a result of the above plasma treatment, as shown in FIG. 1E, the AlC exposed from the TiN films 22 and 24 is exposed.
The Al 3 N film 26 is formed on the side surface of the u film 23 by the reaction formula of 6Al + N 2 → 3Al 3 N, and the Al wiring 27 of the laminated structure is completed.
【００２７】以上の様にして形成した第１具体例のＡｌ
配線２７では、ＡｌＣｕ膜２３の下面及び上面がＴｉＮ
膜２２、２４に覆われているのみならず側面もＡｌ3 Ｎ
膜２６に覆われており、ＴｉＮ膜２２、２４及びＡｌ3
Ｎ膜２６はＡｌＣｕ膜２３よりも高硬度で且つ高密度で
あるので、これらのＴｉＮ膜２２、２４及びＡｌ3 Ｎ膜
２６が保護膜になって、下方及び上方のみならず側方へ
もヒロックが形成されにくい。Al of the first specific example formed as described above
In the wiring 27, the lower and upper surfaces of the AlCu film 23 are made of TiN.
Al 3 N is not only covered by the films 22 and 24 but also on the side surface.
The TiN films 22, 24 and Al 3 are covered with the film 26.
Since the N film 26 has a higher hardness and a higher density than the AlCu film 23, the TiN films 22, 24 and the Al 3 N film 26 serve as protective films, so that the hillocks are not only downward and upward but also laterally. Are hard to form.
【００２８】しかも、この第１具体例では、図１（ｂ）
のＲＩＥ及び図１（ｃ）の灰化を行った反応室と同じ反
応室内で図１（ｄ）のプラズマ処理を行っているので、
製造装置及び製造装置間の搬送工程が少なくて、Ａｌ配
線２７を低コストで形成することができる。Moreover, in the first specific example, FIG.
1D and the ashing reaction chamber of FIG. 1C, the plasma treatment of FIG. 1D is performed in the same reaction chamber.
The Al wiring 27 can be formed at low cost because the number of manufacturing steps between the manufacturing apparatuses is small.
【００２９】なお、以上の第１具体例では、窒素を含む
雰囲気中でプラズマ処理を行ってＡｌＣｕ膜２３の側面
にＡｌ3 Ｎ膜２６を形成しているが、酸素を含む雰囲気
中でプラズマ処理を行ってＡｌＣｕ膜２３の側面にＡｌ
2 Ｏ3 膜を形成してもよい。In the first embodiment described above, the plasma treatment is performed in the atmosphere containing nitrogen to form the Al 3 N film 26 on the side surface of the AlCu film 23. However, the plasma treatment is performed in the atmosphere containing oxygen. To the side surface of the AlCu film 23.
A 2 O 3 film may be formed.
【００３０】図２が、第２具体例を示している。この第
２具体例でも、図２（ａ）に示す様に、ＴｉＮ膜２４、
ＡｌＣｕ膜２３及びＴｉＮ膜２２を配線のパターンに加
工するために使用したフォトレジスト２５を灰化によっ
て剥離するまでは、図１に示した第１具体例と実質的に
同様の工程を実行する。しかし、この第２具体例では、
その後、図２（ａ）に示す様に、膜厚が１００ｎｍのＷ
膜３１を下記の条件のＣＶＤ法で形成する。FIG. 2 shows a second specific example. Also in this second example, as shown in FIG. 2A, the TiN film 24,
Until the photoresist 25 used for processing the AlCu film 23 and the TiN film 22 into a wiring pattern is removed by ashing, substantially the same steps as in the first specific example shown in FIG. 1 are performed. However, in this second example,
After that, as shown in FIG. 2A, a W film having a film thickness of 100 nm is formed.
The film 31 is formed by the CVD method under the following conditions.
【００３１】 Ｗ膜のＣＶＤ条件 ガス ＷＦ6 ／Ｈ2 ／Ａｒ＝４０／４００／２２５０ｓｃｃｍ 圧力 １０．６６ｋＰａ 基板加熱温度 ４２０℃CVD conditions for W film Gas WF 6 / H 2 / Ar = 40/400/2250 sccm Pressure 10.66 kPa Substrate heating temperature 420 ° C.
【００３２】次に、下記の条件でＷ膜３１の全面をエッ
チバックし、図２（ｂ）に示す様に、ＴｉＮ膜２２、Ａ
ｌＣｕ膜２３及びＴｉＮ膜２４の側面に、Ｗ膜３１から
成る側壁を形成して、積層構造のＡｌ配線３２を完成さ
せる。Next, the entire surface of the W film 31 is etched back under the following conditions, and as shown in FIG.
Sidewalls made of the W film 31 are formed on the side surfaces of the 1Cu film 23 and the TiN film 24 to complete the Al wiring 32 having a laminated structure.
【００３３】エッチング条件 ガス ＳＦ6 ／Ｃｌ2 ＝４０／２０ｓｃｃｍ 圧力 １Ｐａ 高周波電力 ６００ＷEtching conditions Gas SF 6 / Cl 2 = 40/20 sccm Pressure 1 Pa High frequency power 600 W
【００３４】以上の様にして形成した第２具体例のＡｌ
配線３２では、Ｗ膜３１によってＡｌＣｕ膜２３から側
方へのヒロックが形成されにくいのみならず、ボイド等
によってＡｌＣｕ膜２３が断線してもＷ膜３１が電流の
バイパスになるので、寿命が長い。Al of the second specific example formed as described above
In the wiring 32, not only is it difficult for the W film 31 to form hillocks laterally from the AlCu film 23, but also the W film 31 becomes a bypass for the current even if the AlCu film 23 is disconnected due to voids or the like, so the life is long. .
【００３５】図３が、第３具体例を示している。この第
３具体例も、ＡｌＣｕ膜２３の代わりに、膜厚が５００
ｎｍのＴｉ膜３３を下記の条件のスパッタ法で形成し、
プラズマ処理の代わりに、下記の条件の熱処理を行うこ
とを除いて、図１に示した第１具体例と実質的に同様の
工程を実行する。この結果、Ｔｉ膜３３の側面がＴｉＮ
膜３４に覆われている積層構造のＴｉ配線３５が完成す
る。FIG. 3 shows a third specific example. Also in this third example, the film thickness is 500 instead of the AlCu film 23.
a Ti film 33 of 30 nm in thickness by a sputtering method under the following conditions,
Instead of the plasma treatment, substantially the same steps as those of the first specific example shown in FIG. 1 are performed except that the heat treatment under the following conditions is performed. As a result, the side surface of the Ti film 33 is covered with TiN.
The Ti wiring 35 having a laminated structure covered with the film 34 is completed.
【００３６】Ｔｉ膜のスパッタ条件 ガス Ａｒ＝６５ｓｃｃｍ 圧力 ０．４Ｐａ 直流電力 ５ｋＷ 基板加熱温度 ３００℃Sputtering conditions for Ti film Gas Ar = 65 sccm Pressure 0.4 Pa DC power 5 kW Substrate heating temperature 300 ° C.
【００３７】熱処理条件 ガス ＮＨ3 １００％ 温度 ７００℃ 圧力 常圧 処理時間 ３０秒Heat treatment conditions Gas NH 3 100% Temperature 700 ° C. Pressure Normal pressure Treatment time 30 seconds
【００３８】なお、以上の第３具体例では、窒素を含む
雰囲気中で熱処理を行ってＴｉ膜３３の側面にＴｉＮ膜
３４を形成しているが、酸素を含む雰囲気中でプラズマ
処理を行ってＴｉ膜３３の側面にＴｉＯ膜を形成しても
よい。In the above third embodiment, the heat treatment is performed in the atmosphere containing nitrogen to form the TiN film 34 on the side surface of the Ti film 33. However, the plasma treatment is performed in the atmosphere containing oxygen. A TiO film may be formed on the side surface of the Ti film 33.
【００３９】図４が、第４具体例を示している。この第
４具体例も、プラズマ処理の代わりに、下記の条件で窒
素をイオン注入することを除いて、図１に示した第１具
体例と実質的に同様の工程を実行する。この結果、Ａｌ
Ｃｕ膜２３の側面がＡｌ3 Ｎ膜２６に覆われている積層
構造のＡｌ配線２７が完成する。FIG. 4 shows a fourth specific example. Also in this fourth specific example, the substantially same steps as the first specific example shown in FIG. 1 are executed except that nitrogen is ion-implanted under the following conditions instead of the plasma treatment. As a result, Al
The Al wiring 27 having a laminated structure in which the side surface of the Cu film 23 is covered with the Al 3 N film 26 is completed.
【００４０】窒素のイオン注入条件 エネルギー １０ｋｅＶ ドーズ量 １×１０18個／ｃｍ2 Nitrogen ion implantation conditions Energy 10 keV Dose amount 1 × 10 18 pieces / cm 2
【００４１】窒素はＡｌＣｕ膜２３のみならずＴｉＮ膜
２４やＳｉＯ2 膜２１にもイオン注入される。しかし、
ＴｉＮ膜２４は窒素をイオン注入されてもパターンや電
気特性には影響がなく、ＳｉＯ2 膜２１も表面にＳｉＯ
Ｎ膜３６が形成されるだけで絶縁特性には影響がない。Nitrogen is ion-implanted not only into the AlCu film 23 but also into the TiN film 24 and the SiO 2 film 21. But,
Even if the TiN film 24 is ion-implanted with nitrogen, it does not affect the pattern and electrical characteristics, and the SiO 2 film 21 also has SiO 2 on the surface.
Only the N film 36 is formed without affecting the insulation characteristics.
【００４２】なお、以上の第４具体例では、窒素をイオ
ン注入してＡｌＣｕ膜２３の側面にＡｌ3 Ｎ膜２６を形
成しているが、酸素をイオン注入してＡｌＣｕ膜２３の
側面にＡｌ2 Ｏ3 膜を形成してもよい。In the fourth embodiment described above, nitrogen is ion-implanted to form the Al 3 N film 26 on the side surface of the AlCu film 23. However, oxygen is ion-implanted to form the Al 3 N film 26 on the side surface of the AlCu film 23. A 2 O 3 film may be formed.
【００４３】また、以上の第１〜第４具体例では、配線
としてＡｌＣｕ膜２３またはＴｉ膜３３を用い、これら
のＡｌＣｕ膜２３またはＴｉ膜３３の保護膜としてＡｌ
3 Ｎ膜２６、Ｗ膜３１またはＴｉＮ膜３４を用いたが、
Ｗ膜、Ｍｏ膜、Ｃｒ膜またはこれらの合金膜や化合物膜
を配線として用いてもよく、Ｍｏ膜、Ｃｒ膜またはこれ
らの合金膜や化合物膜を保護膜として用いてもよい。In the above-described first to fourth specific examples, the AlCu film 23 or the Ti film 33 is used as the wiring, and the AlCu film 23 or the Ti film 33 is protected by the Al film.
3 N film 26, W film 31 or TiN film 34 is used,
A W film, a Mo film, a Cr film or an alloy film or a compound film thereof may be used as the wiring, and a Mo film, a Cr film or an alloy film or a compound film thereof may be used as a protective film.
【００４４】[0044]
【発明の効果】本願の発明による配線構造及びその形成
方法では、配線の側方へのヒロックを抑制して同一層の
配線間における短絡を防止することができるので、信頼
性が高い配線構造を提供することができる。According to the wiring structure and the method for forming the same according to the present invention, it is possible to suppress a hillock on the side of the wiring and prevent a short circuit between the wirings in the same layer. Can be provided.
【００４５】また、配線の側面を覆う保護膜を導電膜に
すれば、ボイド等によって配線が断線しても、保護膜が
電流のバイパスになるので、寿命が長くて信頼性が更に
高い配線構造を提供することができる。Further, if the protective film covering the side surface of the wiring is made of a conductive film, the protective film serves as a current bypass even if the wiring is broken due to voids or the like, so that the wiring structure has a long life and higher reliability. Can be provided.
【００４６】また、配線のパターニングと配線の側面を
覆う膜を形成するためのプラズマ処理とを同一の反応室
内で行えば、製造装置及び製造装置間の搬送工程が少な
くなるので、信頼性が高い配線構造を低コストで形成す
ることができる。Further, if the patterning of the wiring and the plasma treatment for forming the film covering the side surface of the wiring are carried out in the same reaction chamber, the manufacturing apparatus and the transfer process between the manufacturing apparatuses are reduced, so that the reliability is high. The wiring structure can be formed at low cost.
【図１】本願の発明の第１具体例を工程順に示す配線構
造の側断面図である。FIG. 1 is a side sectional view of a wiring structure showing a first specific example of the invention of the present application in the order of steps.
【図２】本願の発明の第２具体例の一部を工程順に示す
配線構造の側断面図である。FIG. 2 is a side sectional view of a wiring structure showing a part of a second specific example of the invention of the present application in the order of steps.
【図３】本願の発明の第３具体例の一部を示す配線構造
の側断面図である。FIG. 3 is a side sectional view of a wiring structure showing a part of a third specific example of the present invention.
【図４】本願の発明の第４具体例の一部を示す配線構造
の側断面図である。FIG. 4 is a side sectional view of a wiring structure showing a part of a fourth specific example of the present invention.
【図５】ボイド及びヒロックを説明するための配線の平
面図である。FIG. 5 is a plan view of wiring for explaining voids and hillocks.
【図６】本願の発明の一従来例による配線の側断面図で
ある。FIG. 6 is a side sectional view of a wiring according to a conventional example of the present invention.
２３ ＡｌＣｕ膜 ２６ Ａｌ3 Ｎ膜 ２７ Ａｌ配線 ３１ Ｗ膜 ３２ Ａｌ配線 ３３ Ｔｉ膜 ３４ ＴｉＮ膜 ３５ Ｔｉ配線23 AlCu film 26 Al 3 N film 27 Al wiring 31 W film 32 Al wiring 33 Ti film 34 TiN film 35 Ti wiring
Claims (9)
度の材料から成る保護膜によって前記配線の側面が覆わ
れていることを特徴とする配線構造。1. A wiring structure in which a side surface of the wiring is covered with a protective film made of a material having a higher hardness and a higher density than a material for forming the wiring.
する請求項１記載の配線構造。2. The wiring structure according to claim 1, wherein the protective film is a conductive film.
成材料よりも高硬度で且つ高密度の材料から成る保護膜
を前記配線の側面に形成する工程を具備することを特徴
とする配線構造の形成方法。3. The formation of a wiring structure comprising the step of, after patterning the wiring, forming a protective film made of a material having a higher hardness and a higher density than a material for forming the wiring on a side surface of the wiring. Method.
特徴とする請求項３記載の配線構造の形成方法。4. The method of forming a wiring structure according to claim 3, wherein a conductive film is used as the protective film.
囲気中で前記配線にプラズマ処理を施して、前記保護膜
を形成することを特徴とする請求項３記載の配線構造の
形成方法。5. The method for forming a wiring structure according to claim 3, wherein the protective film is formed by subjecting the wiring to plasma treatment in an atmosphere containing nitrogen or an atmosphere containing oxygen.
処理とを同一の反応室内で行うことを特徴とする請求項
５記載の配線構造の形成方法。6. The method for forming a wiring structure according to claim 5, wherein the patterning of the wiring and the plasma treatment are performed in the same reaction chamber.
囲気中で前記配線に熱処理を施して、前記保護膜を形成
することを特徴とする請求項３記載の配線構造の形成方
法。7. The method for forming a wiring structure according to claim 3, wherein the wiring is heat-treated in an atmosphere containing nitrogen or an atmosphere containing oxygen to form the protective film.
して、前記保護膜を形成することを特徴とする請求項３
記載の配線構造の形成方法。8. The protective film is formed by ion-implanting nitrogen or oxygen into the wiring.
A method for forming the described wiring structure.
形成することを特徴とする請求項３記載の配線構造の形
成方法。9. The method of forming a wiring structure according to claim 3, wherein the side wall-shaped protective film is formed on a side surface of the wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21248095A JPH0945688A (en) | 1995-07-28 | 1995-07-28 | Interconnection structure and its formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21248095A JPH0945688A (en) | 1995-07-28 | 1995-07-28 | Interconnection structure and its formation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0945688A true JPH0945688A (en) | 1997-02-14 |
Family
ID=16623351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21248095A Pending JPH0945688A (en) | 1995-07-28 | 1995-07-28 | Interconnection structure and its formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0945688A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998021748A1 (en) * | 1996-11-14 | 1998-05-22 | Tokyo Electron Limited | Semiconductor device and its manufacturing method |
| JP2002359246A (en) * | 2001-03-27 | 2002-12-13 | Semiconductor Energy Lab Co Ltd | Wiring and manufacturing method therefor, and circuit board and manufacturing method therefor |
| KR100457372B1 (en) * | 2001-12-06 | 2004-11-16 | 치 메이 옵토일렉트로닉스 코포레이션 | Hillock-free aluminum wiring layer and method of forming the same |
| US6835660B2 (en) | 2002-11-05 | 2004-12-28 | Oki Electric Industry Co., Ltd. | Method of manufacturing semiconductor device having metal alloy interconnection that has excellent EM lifetime |
| JP2009088537A (en) * | 2001-03-27 | 2009-04-23 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its fabrication process |
| JP2010245415A (en) * | 2009-04-09 | 2010-10-28 | Nec Corp | Magnetoresistive storage device and method of manufacturing the same |
| JP2011035048A (en) * | 2009-07-30 | 2011-02-17 | Renesas Electronics Corp | Method of manufacturing semiconductor integrated circuit device |
-
1995
- 1995-07-28 JP JP21248095A patent/JPH0945688A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998021748A1 (en) * | 1996-11-14 | 1998-05-22 | Tokyo Electron Limited | Semiconductor device and its manufacturing method |
| US6218299B1 (en) | 1996-11-14 | 2001-04-17 | Tokyo Electron Limited | Semiconductor device and method for producing the same |
| JP2002359246A (en) * | 2001-03-27 | 2002-12-13 | Semiconductor Energy Lab Co Ltd | Wiring and manufacturing method therefor, and circuit board and manufacturing method therefor |
| JP2009088537A (en) * | 2001-03-27 | 2009-04-23 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its fabrication process |
| US7884369B2 (en) | 2001-03-27 | 2011-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same |
| KR100457372B1 (en) * | 2001-12-06 | 2004-11-16 | 치 메이 옵토일렉트로닉스 코포레이션 | Hillock-free aluminum wiring layer and method of forming the same |
| US6835660B2 (en) | 2002-11-05 | 2004-12-28 | Oki Electric Industry Co., Ltd. | Method of manufacturing semiconductor device having metal alloy interconnection that has excellent EM lifetime |
| JP2010245415A (en) * | 2009-04-09 | 2010-10-28 | Nec Corp | Magnetoresistive storage device and method of manufacturing the same |
| JP2011035048A (en) * | 2009-07-30 | 2011-02-17 | Renesas Electronics Corp | Method of manufacturing semiconductor integrated circuit device |
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