JPH0945636A - Wafer splitting method - Google Patents
Wafer splitting methodInfo
- Publication number
- JPH0945636A JPH0945636A JP7192764A JP19276495A JPH0945636A JP H0945636 A JPH0945636 A JP H0945636A JP 7192764 A JP7192764 A JP 7192764A JP 19276495 A JP19276495 A JP 19276495A JP H0945636 A JPH0945636 A JP H0945636A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- laser
- line
- laser irradiation
- splitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、脆性材料からなる
略方形ウェーハの割断方法に関し、特にウエーハを真直
ぐに割断する割断方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of cleaving a substantially rectangular wafer made of a brittle material, and more particularly to a method of cleaving a wafer straight.
【０００２】[0002]
【従来の技術】ウェーハのスクライブに用いるレーザス
クライブ法は、パルスモードのＣＯ2レーザ、あるいは
ＹＡＧレーザを微小スポットに集光して走査し、ミシン
目状に微***開けを連続させる方法であるが、飛散した
溶融粒子の再付着により汚染が発生しやすい。2. Description of the Related Art The laser scribing method used for scribing a wafer is a method in which a pulse mode CO2 laser or YAG laser is focused on a minute spot for scanning to continuously perforate minute holes. Contamination is likely to occur due to redeposition of scattered molten particles.
【０００３】そこで、これらの問題点のないレーザ照射
による加熱を利用した割断方法が開発されている。[0003] Therefore, a cutting method utilizing heating by laser irradiation which does not have these problems has been developed.
【０００４】この割断方法を用いた、従来の半導体ウェ
ーハの割断方法の一例を図２から説明する。図におい
て、１は割断前半導体ウェーハ、２は割断後半導体ウェ
ーハで、第一割断片２ａ、第二割断片２ｂ、第三割断片
２ｃ、割断残り片２ｄに割断される。An example of a conventional semiconductor wafer cleaving method using this cleaving method will be described with reference to FIG. In the figure, 1 is a semiconductor wafer before cleaving, and 2 is a semiconductor wafer after cleaving, which is cleaved into a first cleaved piece 2a, a second cleaved piece 2b, a third cleaved piece 2c, and a cleaved piece 2d.
【０００５】３ａ〜３ｃは割断予定線（想像線）で、第
一割断予定線３ａ、第二割断予定線３ｂ、第三割断予定
線３ｃからなり、半導体ウェーハ１の上辺１ａから下辺
１ｂ間に真直ぐに引かれている。４ａ〜４ｃは半導体ウ
ェーハ１の上辺１ａの対応する割断予定線３ａ〜３ｃ上
にダイヤモンドポイントで一定間隔に入れられた初亀
裂、５ａ〜５ｃは対応する初亀裂４ａ〜４ｃから割断予
定線３ａ〜３ｃ上で下辺１ｂ方向に略一定距離離して、
レーザを照射して加熱する最初のレーザ照射点である。Reference numerals 3a to 3c are planned cleavage lines (imaginary lines), which are composed of a first planned cleavage line 3a, a second planned cleavage line 3b, and a third planned cleavage line 3c, which are between the upper side 1a and the lower side 1b of the semiconductor wafer 1. It is drawn straight. 4a to 4c are initial cracks which are provided at predetermined intervals at diamond points on the corresponding planned cleavage lines 3a to 3c on the upper side 1a of the semiconductor wafer 1, and 5a to 5c are corresponding initial cracks 4a to 4c from the planned cleavage line 3a to 3c. 3c on the lower side 1b in a substantially constant distance,
This is the first laser irradiation point where the laser is irradiated and heated.
【０００６】６ａ〜６ｃは割断面で、第一割断片２ａと
第二割断片２ｂ間の第一割断面６ａの中間部６ｄは半導
体ウェーハ１の図の右辺１ｃ側に微小寸法例えば０．２
〜０．３ｍｍ膨らんでいる。第二割断片２ｂと第三割断
片２ｃ間の第二割断面６ｂ、の中間部６ｅの膨らみは第
一割断面６ａの中間部６ｄの膨らみより小さい。第三割
断面６ｃの中間部６ｆの膨らみはさらに小さい。Reference numerals 6a to 6c denote fractured surfaces, and an intermediate portion 6d of the first fractured surface 6a between the first fractured piece 2a and the second fractured piece 2b has a minute dimension on the right side 1c side of the semiconductor wafer 1 in the drawing, for example, 0.2.
~ 0.3 mm bulging. The bulge of the intermediate portion 6e of the second split section 6b between the second split section 2b and the third split section 2c is smaller than the bulge of the intermediate section 6d of the first split section 6a. The bulge of the intermediate portion 6f of the third split cross section 6c is even smaller.
【０００７】ここでは、割断されて分離された両側の割
断面６ａ〜６ｃは同じ記号を付し、また、割断面６ａ〜
６ｃの中間部６ｄ〜６ｆも同様に同じ記号を付し説明し
た。Here, the split surfaces 6a to 6c on both sides that have been split and separated are given the same reference numerals, and the split surfaces 6a to 6c.
Similarly, the intermediate portions 6d to 6f of 6c are described with the same symbols.
【０００８】この割断方法を以下に説明する。半導体ウ
ェーハ１の上辺１ａに一定間隔の割断予定線３ａ〜３ｃ
上にダイヤモンドポイントで初亀裂４ａ〜４ｃを形成す
る。つづいて、第一割断予定線３ａ上の初亀裂４ａから
第一割断予定線３ａ上で、下辺１ｂ方向に一定距離離れ
た最初のレーザ照射点５ａをレーザで照射して加熱し、
熱応力により第一割断面をレーザ照射点５ａまで進行さ
せる。この操作を繰り返して半導体ウェーハ１の上辺１
ａから下辺１ｂまで割断し、第一割断片２ａを割断す
る。This cleaving method will be described below. Planned cleavage lines 3a to 3c on the upper side 1a of the semiconductor wafer 1
Initial cracks 4a to 4c are formed on the diamond points. Subsequently, on the first planned cleavage line 3a from the first crack 4a on the first planned cleavage line 3a, the first laser irradiation point 5a, which is a certain distance away in the direction of the lower side 1b, is irradiated with a laser beam and heated,
The first fractured surface is advanced to the laser irradiation point 5a by thermal stress. By repeating this operation, the upper side 1 of the semiconductor wafer 1
Cleave from a to the lower side 1b to cleave the first fragment 2a.
【０００９】このときの、第一割断面６ａの中間部６ｄ
近傍は右辺１ｃ方向に膨らんでいる。この原因は、第一
割断予定線３ａの左右で半導体ウェーハ１の大きさが異
なり、それにともなって熱の拡散速度が異なるためであ
る。熱の拡散の遅い第一割断片２ａ側、即ちレーザ照射
点５ａの右辺１ｃ側に徐々に熱が蓄積され温度が高くな
る。その結果、第一割断片２ａの第一割断面６ａは中間
部６ｄに向かうにしたがって右辺１ｃ側に応力が集中す
る。初亀裂４ａ〜４ｃから進行する亀裂は応力が集中し
た方向に進行するために、右辺１ｃ側に膨らんで割断さ
れる。レーザ照射点５ａが第一割断予定線３ａの下辺１
ｂに近付くにつれて、割断されていない下辺１ｂ方向の
面積が狭くなり、下辺１ｂ方向への熱拡散が遅くなり、
レーザ照射点５の両側の温度差は少なくなる。したがっ
て、第一割断面６ａ、６ｂは第一割断予定線３ａに近付
いてくる。At this time, the intermediate portion 6d of the first split surface 6a
The vicinity bulges in the direction of the right side 1c. This is because the size of the semiconductor wafer 1 is different between the left and right of the first planned cutting line 3a, and the heat diffusion rate is different accordingly. The heat gradually accumulates on the side of the first fragment 2a where heat is slowly diffused, that is, on the right side 1c of the laser irradiation point 5a, and the temperature rises. As a result, the stress is concentrated on the right side 1c side of the first fractured face 6a of the first fractured piece 2a toward the intermediate portion 6d. The cracks propagating from the initial cracks 4a to 4c propagate in a direction in which stress is concentrated, and thus swell toward the right side 1c and are fractured. The laser irradiation point 5a is the lower side 1 of the first planned cutting line 3a.
As it approaches b, the area of the unbroken lower side 1b direction becomes smaller, and the heat diffusion in the lower side 1b direction becomes slower,
The temperature difference on both sides of the laser irradiation point 5 is reduced. Therefore, the first cleavage planes 6a and 6b approach the first planned cleavage line 3a.
【００１０】つづいて、第二割断予定線３ｂ上の初亀裂
４ｂから第二割断予定線３ｂ上で、下辺１ｂ方向に一定
距離離れた最初のレーザ照射点５ｂをレーザで照射して
加熱し、初亀裂４ｂをレーザ照射点５ｂまで進行させ
る。この操作を繰り返して半導体ウェーハ１の上辺１ａ
から下辺１ｂまで割断し、第二割断片２ｂを割断する。Then, on the second planned cleavage line 3b from the first crack 4b on the second planned cleavage line 3b, the laser is applied to the first laser irradiation point 5b which is separated by a certain distance in the direction of the lower side 1b, and heated. The initial crack 4b is advanced to the laser irradiation point 5b. By repeating this operation, the upper side 1a of the semiconductor wafer 1
To the lower side 1b, and the second fragment 2b is cleaved.
【００１１】このときの第二割断面６ｂの中間部６ｅ近
傍は第一割断面６ａの方向に膨らんでいる。しかし、第
一割断面６ａの膨らみの大きさに比べると小さい。この
原因は、第二割断予定線３ｂの左右の半導体ウェーハ１
の大きさの比が、第一割断面６ａの左右の面積の比に比
べて１に近くなり、温度の偏りが少なくなるためであ
る。At this time, the vicinity of the intermediate portion 6e of the second split surface 6b bulges in the direction of the first split surface 6a. However, it is smaller than the bulge of the first split surface 6a. This is caused by the semiconductor wafers 1 on the left and right of the second planned dividing line 3b.
This is because the size ratio becomes closer to 1 compared to the ratio of the left and right areas of the first fractured surface 6a, and the temperature deviation is reduced.
【００１２】さらに、同様にして、第三割断予定線３ｃ
を割断し、第三割断片２ｃを割断する。このときの、第
三割断予定線３ｃの左右の半導体ウェーハ１の大きさの
比がさらに１に近くなり、第三割断面６ｃの中間部６ｆ
の膨らみはさらに小さくなる。Further, in the same manner, the third planned dividing line 3c
And the third fragment 2c is cleaved. At this time, the size ratio of the semiconductor wafers 1 on the left and right of the third planned dividing line 3c becomes even closer to 1, and the middle portion 6f of the third dividing cross section 6c.
Bulges are even smaller.
【００１３】この割断方法においては、半導体ウェーハ
１をＸＹテーブル上に載せて、一定距離移動させてレー
ザを照射したり、半導体ウェーハ１を固定して、レーザ
を一定距離移動後照射したりしている。In this cleaving method, the semiconductor wafer 1 is placed on an XY table and moved by a fixed distance to irradiate the laser, or the semiconductor wafer 1 is fixed and irradiated with the laser after moving the fixed distance. There is.
【００１４】しかし、上記割断法では、割断面６ａ〜６
ｃが曲がると言う問題があった。この問題を解決するた
めに、一部に用いられている割断法を図３から説明す
る。図において、１１は割断前半導体ウェーハ、１２は
割断後半導体ウェーハで、第一割断片１２ａ、第二割断
片１２ｂ、第三割断片１２ｃ、と割断残り片１２ｄに割
断される。However, in the above-mentioned cleaving method, the cleaved surfaces 6a-6
There was a problem that c turned. The cleaving method used in part to solve this problem will be described with reference to FIG. In the figure, 11 is a semiconductor wafer before cleaving, and 12 is a semiconductor wafer after cleaving, which is cleaved into a first cleaved piece 12a, a second cleaved piece 12b, a third cleaved piece 12c, and a remaining cleaved piece 12d.
【００１５】１３ａ〜１３ｃは半導体ウェーハ１１の上
辺１１ａから下辺１１ｂまで引かれたレーザ照射予定線
で、半導体ウェーハ１１の右辺１１ｃからレーザ照射予
定第一線１３ａ、レーザ照射予定第二線１３ｂ、レーザ
照射予定第三線１３ｃが形成されている。レーザ照射予
定第一線１３ａは中間部１３ｄで、レーザ照射予定第二
線１３ｂ側に膨らんでいる。レーザ照射予定第二線１３
ｂは中間部１３ｅで同様にレーザ照射予定第三線１３ｃ
側に膨らんでいるが、レーザ照射予定第一線１３ａの中
間部１３ｄの膨らみよりは小さい。レーザ照射予定第三
線１３ｃの中間部１３ｆの膨らみはさらに小さい。Reference numerals 13a to 13c denote laser irradiation planned lines drawn from the upper side 11a to the lower side 11b of the semiconductor wafer 11, and the laser irradiation scheduled first line 13a, the laser scheduled second line 13b, and the laser irradiation scheduled line from the right side 11c of the semiconductor wafer 11. An irradiation-scheduled third line 13c is formed. The laser irradiation-scheduled first line 13a is an intermediate portion 13d, and swells toward the laser irradiation-scheduled second line 13b side. Laser irradiation scheduled second line 13
b is an intermediate portion 13e, which is also the third line 13c scheduled for laser irradiation.
Although it swells to the side, it is smaller than the swelling of the intermediate portion 13d of the first line 13a for laser irradiation. The bulge of the intermediate portion 13f of the third line 13c for laser irradiation is even smaller.
【００１６】１４ａ〜１４ｃは半導体ウェーハ１１の上
辺１１ａの対応するレーザ照射予定線１３ａ〜１３ｃ上
にダイヤモンドポイントで一定間隔で入れた初亀裂、１
５ａ〜１５ｃは対応する初亀裂１４ａ〜１４ｃからレー
ザ照射予定線１３ａ〜１３ｃ上で下辺１１ｂ方向に略一
定距離離して、レーザで照射して加熱する最初のレーザ
照射点、１６ａ〜１６ｃは割断面で、第一割断面１６ａ
で第一割断片１２ａを割断し、第二割断面１６ｂで第二
割断片１２ｂを割断し、第三割断面１６ｃで第三割断片
１２ｃを割断する。ここでは、割断されて分離された両
側の割断面１６ａ〜１６ｃは同じ記号を付して説明す
る。Reference numerals 14a to 14c are initial cracks formed at predetermined intervals at diamond points on the corresponding laser irradiation lines 13a to 13c on the upper side 11a of the semiconductor wafer 11.
5a to 15c are first laser irradiation points at which the laser irradiation is performed by heating at a substantially constant distance in the direction of the lower side 11b on the planned laser irradiation lines 13a to 13c from the corresponding initial cracks 14a to 14c, and 16a to 16c are split cross sections. Then, the first split section 16a
The first split fragment 12a is cut by, the second split fragment 12b is split by the second split cross section 16b, and the third split fragment 12c is split by the third split cross section 16c. Here, the split surfaces 16a to 16c on both sides that have been split and separated will be described with the same symbols.
【００１７】この割断方法を以下に説明する。半導体ウ
ェーハ１１の上辺１１ａに一定間隔に形成したレーザ照
射予定線１３ａ〜１３ｃ上に、ダイヤモンドポイントで
初亀裂１４ａ〜１４ｃを形成する。つづいて、半導体ウ
ェーハ１１の幅と第一割断片１２ａの幅より予備実験で
求めた、第一割断面１６ａを曲がりのない真直ぐにする
ための、湾曲したレーザ照射予定第一線１３ａをレーザ
装置に記憶させる。つづいて、記憶させた湾曲したレー
ザ照射予定第一線１３ａに沿って初亀裂１４ａから一定
距離離れた位置の最初のレーザ照射点１５ａをレーザで
照射して加熱し、熱応力により初亀裂１４ａをレーザ照
射点１５ａまで進行させる。この操作を繰り返して下辺
１１ｂまで進めて、第一割断片１２ａを割断する。This cleaving method will be described below. Initial cracks 14a to 14c are formed at diamond points on the laser irradiation planned lines 13a to 13c formed on the upper side 11a of the semiconductor wafer 11 at regular intervals. Next, a curved laser irradiation scheduled first line 13a for straightening the first fractured surface 16a without bending, which was obtained by preliminary experiments from the width of the semiconductor wafer 11 and the width of the first fractured piece 12a, was used as a laser device. To memorize. Subsequently, the first laser irradiation point 15a at a position separated from the initial crack 14a by a predetermined distance along the stored curved first line for laser irradiation 13a is heated by laser irradiation, and the initial crack 14a is heated by the thermal stress. It advances to the laser irradiation point 15a. This operation is repeated to advance to the lower side 11b to cut the first fragment 12a.
【００１８】つづいて、半導体ウェーハ１１から第一割
断片１２ａを除いた幅と第二割断片１２ｂの幅より予備
実験で求めた、第二割断面１６ｂを曲がりのない真直ぐ
にするための、湾曲したレーザ照射予定第二線１３ｂを
レーザ装置に記憶させる。このレーザ照射予定第二線１
３ｂの湾曲は、レーザ照射予定第一線１３ａの湾曲より
小さい。つづいて、第一割断片１２ａと同様に第二割断
片１２ｂを割断する。Subsequently, a curve for straightening the second fractured surface 16b without bending, which was obtained by preliminary experiments from the width of the semiconductor wafer 11 excluding the first fractured piece 12a and the width of the second fractured piece 12b. The laser irradiation planned second line 13b is stored in the laser device. This laser irradiation scheduled second line 1
The curvature of 3b is smaller than the curvature of the first laser-irradiated first line 13a. Subsequently, the second split piece 12b is cut in the same manner as the first split piece 12a.
【００１９】つづいて、同様に第三割断片１２ｃを割断
するが、割断残り片２ｄの幅が第三割断片１２ｃの幅に
近付くとレーザ照射予定第三線１３ｃは真直ぐに近付
く。しかし、事前に予備実験で確認しておく必要はあ
る。この曲がりは割断の割断幅の比と熱伝導度により異
なる。Then, similarly, the third split fragment 12c is cut, but when the width of the uncut piece 2d approaches the width of the third split fragment 12c, the third line 13c for laser irradiation approaches straight. However, it is necessary to confirm in advance by a preliminary experiment. This bending depends on the ratio of the fracture width of the fracture and the thermal conductivity.
【００２０】この割断方法においても、半導体ウェーハ
１１をＸＹテーブル上に載せて、一定距離移動させてレ
ーザを照射したり、半導体ウェーハ１１を固定して、レ
ーザを一定距離移動後照射したりしている。Also in this cleaving method, the semiconductor wafer 11 is placed on an XY table and moved by a fixed distance to irradiate the laser, or the semiconductor wafer 11 is fixed and irradiated with the laser after moving the fixed distance. There is.
【００２１】[0021]
【発明が解決しようとする課題】上記方法では、割断す
る両辺の幅で真直ぐに割断するためのレーザ照射予定線
１３を決める予備実験をする必要があり、また、このと
きのレーザ照射予定線１３の曲線を記憶させて、半導体
ウェーハ１１またはレーザを移動させ、その曲線に沿っ
てレーザ照射する高価な設備を必要としていた。In the above method, it is necessary to carry out a preliminary experiment for determining the laser irradiation schedule line 13 for straight cutting with the width of both sides to be cut, and the laser irradiation schedule line 13 at this time. The semiconductor wafer 11 or the laser is moved by memorizing the curve of No. 1, and expensive equipment for irradiating the laser along the curve is required.
【００２２】[0022]
【課題を解決するための手段】本発明は上記課題を解決
するために提案されたもので、脆性材料からなる略方形
ウェーハを割断予定線に沿ってレーザ照射で加熱して割
断する方法であって、割断予定線はウエーハの一辺の中
央に形成された初亀裂から、ウェーハを対称に割断する
ものであり、レーザ照射は初亀裂の先端近傍の割断予定
線上を照射し、熱応力により初亀裂から亀裂を進行さ
せ、この操作を繰り返すことを特徴とするウェーハ割断
方法を提供する。The present invention has been proposed in order to solve the above-mentioned problems, and is a method of heating a substantially rectangular wafer made of a brittle material by laser irradiation along a planned cutting line for laser cutting. The planned cleavage line is to symmetrically cleave the wafer from the initial crack formed in the center of one side of the wafer.The laser irradiation irradiates the planned cleavage line near the tip of the initial crack and the initial crack is generated by thermal stress. There is provided a wafer cutting method characterized by advancing a crack from the above and repeating this operation.
【００２３】また、ウェーハ割断方法を繰り返し、ウェ
ーハを短冊状に割断したり、レーザ照射する初亀裂の近
傍である位置が、初亀裂から５ｍｍ以内の位置であるウ
ェーハ割断方法を提供する。Further, there is provided a wafer cleaving method in which the wafer is cleaved into strips by repeating the wafer cleaving method or the position near the initial crack irradiated with laser is within 5 mm from the initial crack.
【００２４】さらに、ウェーハが化合物半導体ウェーハ
であるウェーハ割断方法を提供する。Further provided is a wafer cleaving method wherein the wafer is a compound semiconductor wafer.
【００２５】[0025]
【作用】この割断において、割断予定線であるウェーハ
の中心線上にレーザを照射するので、このとき発生した
熱は左方向と右方向に同じように拡散するために、レー
ザ照射点の中心に応力が集中し、割断の先端から真っす
ぐに割断予定線上に割断が進行する。In this cleaving, the laser is radiated on the center line of the wafer, which is the planned cleaving line, so the heat generated at this time is diffused in the left and right directions in the same way, so stress is applied to the center of the laser irradiation point. Are concentrated, and the cutting progresses straight from the tip of the cutting to the planned cutting line.
【００２６】[0026]
【実施例】以下に、本発明の実施例を図１から説明す
る。図において、３１は脆性材料からなる略方形半導体
ウェーハ、３２ａ〜３２ｇは半導体ウェーハ３１の上辺
３１ａの上辺割断点、３３ａ〜３３ｇは半導体ウェーハ
３１の下辺３１ｂの下辺割断点、３４ａ〜３４ｇは上辺
割断点３２ａ〜３２ｇから下辺割断点３３ａ〜３３ｇに
向かって割断する割断予定線、３５ａ〜３５ｇは上辺割
断点３２ａ〜３２ｇに形成した初亀裂、３６ａ〜３６ｇ
は初亀裂３５ａ〜３５ｇ近傍の割断予定線３４ａ〜３４
ｇ上でレーザで照射し加熱する最初のレーザ照射点３６
ａ〜３６ｇ、３７は割断が完了した割断辺である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to FIG. In the figure, 31 is a substantially rectangular semiconductor wafer made of brittle material, 32a to 32g are upper side cutting points of the upper side 31a of the semiconductor wafer 31, 33a to 33g are lower side cutting points of the lower side 31b of the semiconductor wafer 31, and 34a to 34g are upper side cutting. A planned cutting line for cutting from the points 32a to 32g toward the lower side cutting points 33a to 33g, 35a to 35g are initial cracks formed at the upper side cutting points 32a to 32g, and 36a to 36g.
Is a planned breaking line 34a-34 near the initial cracks 35a-35g
First laser irradiation point 36, where laser irradiation and heating on g
Reference numerals a to 36 g and 37 are cleaved sides after cleaving is completed.
【００２７】この割断方法を以下に説明する。まず、半
導体ウェーハ３１の上辺３１ａの中央、即ち第一割断予
定線３４ａ上の第一上辺割断点３２ａにダイヤモンドポ
イントで初亀裂３５ａを付ける。つづいて、第一割断予
定線３４ａ上で初亀裂３５ａの下辺割断点３３ａ方向に
略一定距離離れた最初のレーザ照射点３６ａにレーザを
照射して加熱し、熱応力により初亀裂３５ａをレーザ照
射点３６ａまで進行させる。この操作を繰り返して下辺
３１ｂまで割断する。This cleaving method will be described below. First, an initial crack 35a is attached at the diamond point at the center of the upper side 31a of the semiconductor wafer 31, that is, at the first upper side breaking point 32a on the first planned breaking line 34a. Then, on the first planned breaking line 34a, the first laser irradiation point 36a, which is separated by a substantially constant distance in the direction of the lower side breaking point 33a of the initial crack 35a, is irradiated with a laser to heat the laser beam, and the initial crack 35a is irradiated with laser light by thermal stress. Proceed to point 36a. This operation is repeated until the lower side 31b is cut.
【００２８】この割断において、第一割断予定線３４ａ
である半導体ウェーハ３１の中心線上にレーザを照射す
るので、このとき発生した熱は左辺３１ｃ方向と右辺３
１ｄ方向に同じように拡散するために、レーザ照射点３
６ａの中心に熱応力が集中し、初亀裂３５ａの先端から
真っすぐに亀裂が進行する。この操作を繰り返して割断
する。In this cutting, the first planned cutting line 34a
Since the laser is irradiated on the center line of the semiconductor wafer 31, which is the heat generation, the heat generated at this time is generated in the left side 31c direction and the right side 3
The laser irradiation point 3 for the same diffusion in the 1d direction
Thermal stress concentrates on the center of 6a, and the crack progresses straight from the tip of the initial crack 35a. Repeat this operation to cut.
【００２９】中央の点から線対称に第二割断予定線３４
ｂ、３４ｃに沿って割断し、つづいて、同様に第三割断
予定線第三３４ｄ〜３４ｇに沿って割断し、短冊状割断
片３７を形成する。The second planned dividing line 34 is line symmetrical from the center point.
Then, it is cut along b and 34c, and then similarly cut along the third planned dividing lines 34d to 34g to form the strip-like divided pieces 37.
【００３０】全ての初亀裂３５ａ〜３５ｇを最初につけ
て、順次割断してもよい。初亀裂３５ａ〜３５ｇの延長
線上で所定距離離れたレーザ照射点３６ａ〜３６ｇは、
５ｍｍ以下が適切である。All the initial cracks 35a to 35g may be formed first and then sequentially cut. Laser irradiation points 36a to 36g separated by a predetermined distance on the extension line of the initial cracks 35a to 35g are
5 mm or less is suitable.
【００３１】半導体ウェーハ１１を例に説明したが、脆
性材料からなるウェーハであれば、セラミック等の非晶
質でも単結晶でもよい。単結晶を割断する場合に、結晶
面に沿って割断すると、結晶面に沿った割断面が現われ
る。特に、化合物半導体ウェーハに適用すると効果が大
きい。Although the semiconductor wafer 11 has been described as an example, the wafer may be amorphous such as ceramic or single crystal as long as it is a wafer made of a brittle material. When cleaving a single crystal, when cleaving along the crystal plane, a fractured surface along the crystal plane appears. Especially when applied to compound semiconductor wafers, the effect is great.
【００３２】さらに、同様に直角方向に割断して角状ペ
レットを形成することもできる。このとき、半導体ウェ
ーハ３１では各短冊状割断片３７毎に初亀裂３５ａ〜３
５ｇをダイヤモンドポイントまたは硬度の高い物質で形
成するか、半導体ウェーハ３１形成時に、初亀裂３５ａ
〜３５ｇの働きをする凹部を形成しておいてもよい。セ
ラミックでは粒界が初亀裂３５ａ〜３５ｇになる場合が
あるので、そのようなときは初亀裂３５ａ〜３５ｇを必
要としない。Further, it is also possible to form a rectangular pellet by similarly cutting it in the right angle direction. At this time, in the semiconductor wafer 31, the initial cracks 35 a to 3 are formed for each strip-shaped split piece 37.
5 g is formed of diamond points or a substance having high hardness, or the initial crack 35a is formed when the semiconductor wafer 31 is formed.
You may form the recessed part which functions to 35 g. In the case of ceramics, grain boundaries may become initial cracks 35a to 35g, and in such a case, the initial cracks 35a to 35g are not necessary.
【００３３】図では割断毎に間隔を開けて記したが、こ
れは理解し易くするためで、割断する毎に間隔を開ける
必要はない。In the drawing, an interval is provided for each cleaving, but this is for easy understanding, and it is not necessary to provide an interval for each cleaving.
【００３４】レーザの照射点３６ａ〜３６ｇの移動は半
導体ウェーハ３１を水平に載せたＸＹテーブルを一定距
離移動させて、レーザで照射してもよいし、レーザを一
定距離移動させてレーザで照射してもよい。The irradiation points 36a to 36g of the laser may be moved by moving the XY table on which the semiconductor wafer 31 is horizontally placed by a predetermined distance and irradiating by the laser, or by moving the laser by a fixed distance and irradiating by the laser. May be.
【００３５】本方法は、予備実験を必要とせず、真直ぐ
にレーザを照射していけば、真直ぐに割断される。また
設備も簡単な装置でよい。This method does not require a preliminary experiment, and if the laser is irradiated straight, it is cut straight. The equipment may be a simple device.
【００３６】また、本方法ではレーザスクライブ法のよ
うに、溶融粒子の付着による汚染もなく、切り代も必要
としない。Further, in the present method, unlike the laser scribing method, there is no contamination due to adhesion of molten particles, and no cutting margin is required.
【００３７】[0037]
【発明の効果】本発明によれば、脆性材料からなるウェ
ーハを幅の中央に割断予定線方向を向けて初亀裂を形成
し、初亀裂の延長線上の割断予定線をレーザ照射で加熱
し、熱の拡散を初亀裂の両側に均等にすることにより、
応力によりレーザ照射点まで初亀裂を進行させ、この操
作を繰り返すことにより真直ぐに割断する。また、予備
実験を必要とせず、真直ぐにレーザを照射していけば、
真直ぐに割断される。また設備もウェーハまたはレーザ
がＸＹ方向に直線状態で移動できる簡単な装置でよい。EFFECTS OF THE INVENTION According to the present invention, a wafer made of a brittle material is formed with an initial crack in the center of the width in the direction of the expected cleavage line, and the expected cleavage line on the extension line of the initial crack is heated by laser irradiation. By evenly distributing the heat on both sides of the initial crack,
The initial crack progresses to the laser irradiation point due to the stress, and this operation is repeated to fracture straight. Also, if you do not need a preliminary experiment and irradiate the laser straight,
It is cut straight. Further, the equipment may be a simple device capable of linearly moving the wafer or the laser in the XY directions.
【図１】 （ａ）本発明のウェーハ割断前の割断予定線
を示す平面図 （ｂ）本発明のウェーハの第一割断完了後の平面図 （ｃ）本発明のウェーハの第二割断完了後の平面図 （ｄ）本発明のウェーハの第三割断完了後の平面図FIG. 1 (a) is a plan view showing a planned cutting line before the wafer is cut according to the present invention (b) is a plan view of the wafer of the present invention after completion of the first cutting (c) after completing the second cutting of the wafer of the present invention (D) Plan view of the wafer of the present invention after completion of third cutting
【図２】 （ａ）従来のウェーハ割断前の割断予定線を
示す平面図 （ｂ）従来のウェーハ割断後平面図FIG. 2A is a plan view showing a planned cutting line before the conventional wafer is cut. FIG. 2B is a plan view after the conventional wafer is cut.
【図３】 （ａ）改善された従来のウェーハ割断前の割
断予定線を示す平面図 （ｂ）改善された従来のウェーハ割断後平面図FIG. 3A is a plan view showing a planned cutting line before the improved conventional wafer cleaving. FIG. 3B is a plan view after the improved conventional wafer cleaving.
３１ 略方形ウェーハ（半導体ウェーハ） ３１ａ 一辺（上辺） ３４ａ〜３４ｇ 割断予定線 ３５ａ〜３５ｇ 初亀裂 ３６ａ〜３５ｇ レーザ照射点 31 substantially square wafer (semiconductor wafer) 31a one side (upper side) 34a to 34g planned cleavage line 35a to 35g initial crack 36a to 35g laser irradiation point
Claims (4)
定線に沿ってレーザ照射で加熱して割断する方法であっ
て、上記割断予定線はウエーハの一辺の中央に形成され
た初亀裂からこのウェーハを対称に割断するものであ
り、上記レーザ照射は初亀裂の先端近傍の割断予定線上
を照射し、熱応力により初亀裂から亀裂を進行させ、こ
の操作を繰り返すことを特徴とするウェーハ割断方法。1. A method of heating a substantially rectangular wafer made of a brittle material by irradiating it with laser along a planned cutting line, wherein the planned cutting line is formed from an initial crack formed in the center of one side of the wafer. The wafer is symmetrically cleaved, the laser irradiation irradiates on the planned cleavage line near the tip of the initial crack, the crack progresses from the initial crack due to thermal stress, and the wafer cleaving method characterized by repeating this operation .
ハを短冊状に割断し、所定のウェ−ハの大きさにするこ
とを特徴とする請求項１記載のウェーハ割断方法。2. The wafer cutting method according to claim 1, wherein the wafer cutting method is repeated to cut the wafer into strips to obtain a predetermined wafer size.
裂から５ｍｍ以内の割断予定線上の位置であることを特
徴とする請求項１記載のウェーハ割断方法。3. The wafer cutting method according to claim 1, wherein the laser irradiation position is on a planned cutting line within 5 mm from the initial crack.
ることを特徴とする請求項１または請求項２記載のウェ
ーハ割断方法。4. The wafer cutting method according to claim 1, wherein the wafer is a compound semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7192764A JP2897175B2 (en) | 1995-07-28 | 1995-07-28 | Wafer cutting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7192764A JP2897175B2 (en) | 1995-07-28 | 1995-07-28 | Wafer cutting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0945636A true JPH0945636A (en) | 1997-02-14 |
| JP2897175B2 JP2897175B2 (en) | 1999-05-31 |
Family
ID=16296661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7192764A Expired - Fee Related JP2897175B2 (en) | 1995-07-28 | 1995-07-28 | Wafer cutting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2897175B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021128231A1 (en) * | 2019-12-24 | 2021-07-01 | 深圳汉和智造有限公司 | Laser cutting device and laser cutting method |
-
1995
- 1995-07-28 JP JP7192764A patent/JP2897175B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021128231A1 (en) * | 2019-12-24 | 2021-07-01 | 深圳汉和智造有限公司 | Laser cutting device and laser cutting method |
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| Publication number | Publication date |
|---|---|
| JP2897175B2 (en) | 1999-05-31 |
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