JPH09331006A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor deviceInfo
- Publication number
- JPH09331006A JPH09331006A JP8145547A JP14554796A JPH09331006A JP H09331006 A JPH09331006 A JP H09331006A JP 8145547 A JP8145547 A JP 8145547A JP 14554796 A JP14554796 A JP 14554796A JP H09331006 A JPH09331006 A JP H09331006A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- leads
- heat dissipation
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、樹脂封止型半導体
装置に関し、特に放熱効果を向上させることができる樹
脂封止型半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed type semiconductor device, and more particularly to a resin-sealed type semiconductor device capable of improving a heat radiation effect.
【０００２】[0002]
【従来の技術】従来より、樹脂封止型半導体装置として
基板挿入型のものが知られている。一般に、この種の樹
脂封止型半導体装置は図４に示すように、複数のリード
３の一つに設けられた素子搭載部２にトランジスタ等の
半導体素子１が固定されると共に、半導体素子１の電極
部と他のリード３とが金等からなる金属細線４により電
気的に接続されている。そして、エポキシ樹脂等からな
る樹脂封止部５が、半導体素子１，素子搭載部２及び金
属細線４を被覆するように形成されおり、樹脂封止型半
導体装置を構成している。2. Description of the Related Art Conventionally, a substrate insertion type semiconductor device has been known as a resin-sealed semiconductor device. Generally, in this type of resin-encapsulated semiconductor device, as shown in FIG. 4, a semiconductor element 1 such as a transistor is fixed to an element mounting portion 2 provided on one of a plurality of leads 3, and the semiconductor element 1 The electrode portion and the other lead 3 are electrically connected by a thin metal wire 4 made of gold or the like. A resin sealing portion 5 made of epoxy resin or the like is formed so as to cover the semiconductor element 1, the element mounting portion 2 and the thin metal wire 4, and constitutes a resin sealing type semiconductor device.
【０００３】樹脂封止型半導体装置は、リード３をプリ
ント基板６のスルーホールに挿入し、ハンダ等で固定す
ることで実装される。The resin-sealed semiconductor device is mounted by inserting the leads 3 into the through holes of the printed board 6 and fixing them with solder or the like.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上述の樹脂
封止型半導体装置では、エポキシ樹脂等を使用している
ため樹脂封止部５の放熱性が低く、しかも放熱量が樹脂
封止部５の大きさに左右る構造となっていた。そのた
め、近年の電気機器の小型化の動向に伴い、樹脂封止部
５が小さくなるにもかかわらず、パワーＭＯＳＦＥＴ等
の消費電力が大きく、しかも放熱量が大きい素子を使用
する場合など、樹脂封止型半導体装置の放熱性向上が問
題となっていた。In the resin-encapsulated semiconductor device described above, since the epoxy resin or the like is used, the heat dissipation of the resin encapsulation portion 5 is low, and the amount of heat dissipation is small. The structure depended on the size of the. Therefore, with the recent trend of miniaturization of electric devices, even when the resin sealing portion 5 becomes smaller, the resin sealing part 5 is used, for example, when an element that consumes a large amount of power and consumes a large amount of heat is used. There has been a problem in improving the heat dissipation of static semiconductor devices.
【０００５】本発明の目的は、上述した問題点に鑑み、
従来の製造工程を利用しながら簡単に放熱性を向上でき
る樹脂封止型半導体装置を提供することにある。[0005] The object of the present invention is to solve the above problems,
An object of the present invention is to provide a resin-encapsulated semiconductor device that can easily improve heat dissipation while utilizing a conventional manufacturing process.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記目的を達
成するために次のような構成をとる。すなわち、本発明
の樹脂封止型半導体装置は、同一方向に延在する複数の
リードと、前記複数のリードの少なくとも一つに設けら
れた素子搭載部と、前記素子搭載部に固定された半導体
素子とを有し、前記半導体素子と素子搭載部が樹脂封止
部で被覆された樹脂封止型半導体装置において、前記リ
ードの基板挿入側の一部に放熱部が形成されていること
を特徴とするものである。The present invention has the following constitution in order to achieve the above object. That is, the resin-encapsulated semiconductor device of the present invention includes a plurality of leads extending in the same direction, an element mounting portion provided on at least one of the plurality of leads, and a semiconductor fixed to the element mounting portion. In a resin-sealed semiconductor device having an element, wherein the semiconductor element and the element mounting portion are covered with a resin-sealed portion, a heat dissipation portion is formed in a part of the lead on a board insertion side. It is what
【０００７】また、本発明の樹脂封止型半導体装置は、
リードの一部に形成される放熱部を、複数のリードを連
結するタイバーの一部を残すことで形成していることを
特徴とするものである。また、本発明の樹脂封止型半導
体装置は、放熱部が折り曲げられ隣接するリード間の短
絡を防止することを特徴とするものである。The resin-sealed semiconductor device of the present invention is
It is characterized in that the heat dissipation portion formed in a part of the lead is formed by leaving a part of the tie bar connecting the plurality of leads. Further, the resin-encapsulated semiconductor device of the present invention is characterized in that the heat dissipation portion is bent to prevent a short circuit between adjacent leads.
【０００８】本発明の樹脂封止型半導体装置によれば、
リード部の一部に放熱部を形成しているので、放熱量を
従来の樹脂封止型半導体装置に比較して向上させること
ができる。また、、リードの一部に形成される放熱部
を、複数のリードを連結するタイバーの一部を残すこと
で形成しているので、特別の加工工程を経ることなく、
従来のタイバーの切断工程を利用することができる。According to the resin-sealed semiconductor device of the present invention,
Since the heat dissipation part is formed in a part of the lead part, the heat dissipation amount can be improved as compared with the conventional resin-sealed semiconductor device. In addition, since the heat dissipation portion formed on a part of the lead is formed by leaving a part of the tie bar connecting the plurality of leads, without performing a special processing step,
Conventional tie bar cutting processes can be utilized.
【０００９】また、放熱部が折り曲げられており、隣接
するリード間の短絡を防止することができる。Further, since the heat radiating portion is bent, it is possible to prevent a short circuit between adjacent leads.
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施例を、図面を
参照しつつ具体的に説明する。尚、従来と同一部分や相
当部分には同一の符号を付している。本発明の樹脂封止
型半導体装置は、図１に示すように、同一方向に延在す
る複数のリード３ａ，３ｂ，３ｃが組とし、その一つの
リード３ａにトランジスタ等の半導体素子１を載置する
ための素子搭載部２が形成されている。素子搭載部２に
はハンダ等の導電ペーストを介して半導体素子１が固定
されている。Embodiments of the present invention will be specifically described below with reference to the drawings. Note that the same reference numerals are given to the same or corresponding parts as in the related art. As shown in FIG. 1, the resin-sealed semiconductor device of the present invention is composed of a plurality of leads 3a, 3b, 3c extending in the same direction, and a semiconductor element 1 such as a transistor is mounted on one of the leads 3a. The element mounting portion 2 for mounting is formed. The semiconductor element 1 is fixed to the element mounting portion 2 via a conductive paste such as solder.
【００１１】他のリード３ｂ，３ｃは半導体素子１の近
傍に一端が位置するように配置されており、半導体素子
１の上面の電極部と他のリード３ｂ，３ｃの一端が金，
アルミニウム等からなる金属細線４により電気的に接続
されている。最終的に半導体素子１、素子搭載部２及び
金属細線４は、エポキシ樹脂等からなる樹脂によりモー
ルドされ、樹脂封止部５が形成される。樹脂封止部５に
より半導体素子１、素子搭載部２及び金属細線４が外界
から保護されることになる。The other leads 3b and 3c are arranged so that one ends thereof are located in the vicinity of the semiconductor element 1, and the electrode portion on the upper surface of the semiconductor element 1 and one ends of the other leads 3b and 3c are gold,
It is electrically connected by a thin metal wire 4 made of aluminum or the like. Finally, the semiconductor element 1, the element mounting portion 2 and the thin metal wire 4 are molded with a resin such as an epoxy resin to form a resin sealing portion 5. The resin sealing portion 5 protects the semiconductor element 1, the element mounting portion 2, and the thin metal wire 4 from the outside.
【００１２】本発明の特徴は、同一方向に延在する複数
のリード３ａ，３ｂ及び３ｃの基板挿入側の一部に他の
部分に比べて２〜３倍の幅となる放熱部７ａ，７ｂ及び
７ｃを有していることにある。この放熱部７を有するこ
とで樹脂封止型半導体装置の放熱性を従来に比して向上
させている。すなわち、リード３ａ，３ｂ及び３ｃから
電圧が印加され、トランジスタ等の半導体素子１が駆動
されるが、このときの消費電力に応じて半導体素子１か
ら熱が生じる。半導体素子１から生じた熱は素子搭載部
２を介して樹脂封止部５から導出するリード３ａに伝え
られ、外気に触れることで放熱される。このときの放熱
の量は、外気に触れるの面積の大きさに関係しており、
本発明のリード３ａは放熱部７ａを有しているので、従
来のリードに比べその面積は大きく、放熱量も大きくで
きる。A feature of the present invention is that a part of the plurality of leads 3a, 3b and 3c extending in the same direction on the board insertion side has a heat radiation portion 7a, 7b having a width two to three times that of the other portions. And 7c. By having this heat dissipation part 7, the heat dissipation of the resin-sealed semiconductor device is improved as compared with the conventional one. That is, a voltage is applied from the leads 3a, 3b and 3c to drive the semiconductor element 1 such as a transistor, but heat is generated from the semiconductor element 1 according to the power consumption at this time. The heat generated from the semiconductor element 1 is transferred to the leads 3a led out from the resin sealing portion 5 via the element mounting portion 2 and is radiated by touching the outside air. The amount of heat dissipation at this time is related to the size of the area exposed to the outside air,
Since the lead 3a of the present invention has the heat radiating portion 7a, its area is large and the amount of heat radiation can be increased as compared with the conventional lead.
【００１３】さらに、半導体素子１に生じた熱は樹脂封
止部５を介して他のリード３ｂ，３ｃにも伝えられる。
リード３ｂ，３ｃに伝えられた熱は、樹脂封止部５から
導出した部分で外気に触れ放熱される。このリード３
ｂ，３ｃは、リード３ａと同様に放熱部７ｂ，７ｃを有
しており、従来のリードに比べ放熱量も大きくできる。
従って、放熱効果をより向上させるためには、放熱部７
の幅を隣り合うリード３間が接触しない限り広くすれば
よいことになる。Further, the heat generated in the semiconductor element 1 is also transferred to the other leads 3b, 3c via the resin sealing portion 5.
The heat transmitted to the leads 3b and 3c is exposed to the outside air at the portion led out from the resin sealing portion 5 and is radiated. This lead 3
The b and 3c have the heat radiating portions 7b and 7c similarly to the lead 3a, and the amount of heat radiation can be made larger than that of the conventional lead.
Therefore, in order to further improve the heat radiation effect, the heat radiation portion 7
It is sufficient to widen the width of each of the leads 3 as long as the adjacent leads 3 do not contact each other.
【００１４】次に、本発明の製造方法について図２を参
照に説明する。まず、図２（ａ）に示すように、４２ア
ロイ等の金属の平板を打ち抜き、又はエッチングするこ
とにより帯状のリードフレームを作成する。リードフレ
ームは、複数のリード３ａ，３ｂ，３ｃが組として、複
数組がフレーム９に連結されており、一組のリード３
ａ，３ｂ，３ｃのうち少なくとも一つには素子搭載部２
が形成されている。さらに、複数組のリード３ａ，３
ｂ，３ｃ間が応力対する補強ためタイバー８により連結
されている。Next, the manufacturing method of the present invention will be described with reference to FIG. First, as shown in FIG. 2A, a flat plate of metal such as 42 alloy is punched or etched to form a strip-shaped lead frame. The lead frame has a plurality of leads 3a, 3b, 3c as a set, and the plurality of sets are connected to the frame 9.
At least one of a, 3b, and 3c has an element mounting portion 2
Are formed. Furthermore, a plurality of sets of leads 3a, 3
B and 3c are connected by a tie bar 8 for reinforcement against stress.
【００１５】このリードフレームの素子搭載部２にハン
ダ等の導電ペーストで半導体素子１と固定し、半導体素
子１の上面電極と他のリード３ｂ，３ｃの一端とを、
金，アルミニウム等からなる金属細線４で電気的に接続
する。次に図２（ｂ）に示すように、半導体素子１、素
子搭載部２及び金属細線４をエポキシ樹脂等でモールド
し、樹脂封止部５を形成する。この樹脂封止部５により
半導体素子１及び金属細線４が外界から保護される。樹
脂モールドの工程では、半導体素子１及び金属細線４に
応力が加わるが、各リード３ａ，３ｃ，３ｃ群がタイバ
ー８で接続されているので、金属細線４の断線等を防止
することができる。The lead frame element mounting portion 2 is fixed to the semiconductor element 1 with a conductive paste such as solder, and the upper surface electrode of the semiconductor element 1 and one ends of the other leads 3b and 3c are connected to each other.
It is electrically connected by a fine metal wire 4 made of gold, aluminum or the like. Next, as shown in FIG. 2B, the semiconductor element 1, the element mounting portion 2 and the thin metal wire 4 are molded with epoxy resin or the like to form the resin sealing portion 5. The resin sealing portion 5 protects the semiconductor element 1 and the thin metal wire 4 from the outside. In the step of resin molding, stress is applied to the semiconductor element 1 and the thin metal wire 4, but since the leads 3a, 3c, 3c group are connected by the tie bar 8, it is possible to prevent disconnection of the thin metal wire 4.
【００１６】最後に、図２（ｃ）に示すように、複数組
のリード３ａ，３ｃ，３ｃをフレーム９から切断すると
共にタイバー８を切断して、樹脂封止型半導体装置を切
り離して完成品とする。本発明ではタイバー８を切断す
る際に、リード３ａ，３ｃ，３ｃの基板挿入側に２〜３
の幅の放熱用の放熱部７ａ，７ｂ，７ｃを残すようにし
ている。Finally, as shown in FIG. 2 (c), a plurality of sets of leads 3a, 3c, 3c are cut from the frame 9 and the tie bars 8 are cut, and the resin-sealed semiconductor device is cut off to complete the product. And According to the present invention, when the tie bar 8 is cut, the leads 3a, 3c, 3c are placed on the board insertion side by a few pieces.
The heat radiation portions 7a, 7b, 7c for heat radiation having the width of are left.
【００１７】このように従来からあるタイバー８の切断
工程を利用し、加工形状のみを変更することで放熱部７
ａ，７ｂ，７ｃを形成しているので、新たな工程付加す
る必要がない。また、本発明の樹脂封止型半導体装置
は、図３に示すように、同一方向に延在する複数のリー
ド３ａ，３ｂ，３ｃが組とし、その一つのリード３ａに
トランジスタ等の半導体素子１を載置するための素子搭
載部２が形成されている。素子搭載部２にはハンダ等の
導電ペーストを介して半導体素子１が固定されている。As described above, by utilizing the conventional cutting process of the tie bar 8 and changing only the processed shape, the heat radiating portion 7 is formed.
Since a, 7b and 7c are formed, it is not necessary to add a new process. Further, as shown in FIG. 3, the resin-sealed semiconductor device of the present invention includes a plurality of leads 3a, 3b, 3c extending in the same direction as a set, and one of the leads 3a is a semiconductor element 1 such as a transistor. An element mounting portion 2 for mounting the element is formed. The semiconductor element 1 is fixed to the element mounting portion 2 via a conductive paste such as solder.
【００１８】他のリード３ｂ，３ｃは半導体素子１の近
傍に一端が位置するように配置されており、半導体素子
１の上面の電極部と他のリード３ｂ，３ｃの一端が金，
アルミニウム等からなる金属細線４により電気的に接続
されている。最終的に半導体素子１、素子搭載部２及び
金属細線４は、エポキシ樹脂等からなる樹脂によりモー
ルドされ、樹脂封止部５が形成される。樹脂封止部５に
より半導体素子１、素子搭載部２及び金属細線４が外界
から保護されることになる。The other leads 3b and 3c are arranged so that one ends thereof are located in the vicinity of the semiconductor element 1, and the electrode portion on the upper surface of the semiconductor element 1 and one ends of the other leads 3b and 3c are gold,
It is electrically connected by a thin metal wire 4 made of aluminum or the like. Finally, the semiconductor element 1, the element mounting portion 2 and the thin metal wire 4 are molded with a resin such as an epoxy resin to form a resin sealing portion 5. The resin sealing portion 5 protects the semiconductor element 1, the element mounting portion 2, and the thin metal wire 4 from the outside.
【００１９】本発明の特徴は、同一方向に延在する複数
のリード３ａ，３ｂ及び３ｃの基板挿入側の一部に他の
部分に比べて２〜３倍の幅となる放熱部７ａ，７ｂ及び
７ｃを有している。そして、放熱部７ａ，７ｂ，７ｃ
が、隣接するリード３ａ，３ｂ，３ｃと接触しないよう
に折り曲げられている。従って、放熱効果を向上させる
ため放熱部７ａ，７ｂ，７ｃが長くなっても短絡するこ
とはない。この放熱部７ａ，７ｂ，７ｃの折り曲げは、
図２（ｂ）に示す、タイバー８を切断した後、プレス加
工することで形成される。The feature of the present invention is that a part of the plurality of leads 3a, 3b and 3c extending in the same direction on the board insertion side has a heat radiation portion 7a, 7b having a width two to three times that of the other portions. And 7c. Then, the heat dissipation portions 7a, 7b, 7c
Is bent so as not to contact the adjacent leads 3a, 3b, 3c. Therefore, in order to improve the heat dissipation effect, even if the heat dissipation parts 7a, 7b, 7c become longer, they will not be short-circuited. The bending of the heat dissipation parts 7a, 7b, 7c is
It is formed by cutting the tie bar 8 shown in FIG. 2B and then pressing.
【００２０】[0020]
【発明の効果】以上、説明したように本発明による樹脂
封止型半導体装置によれば、本発明の樹脂封止型半導体
装置によれば、リード部の一部に放熱部を形成している
ので、放熱量を従来の樹脂封止型半導体装置に比較して
向上させることができる。また、、リードの一部に形成
される放熱用の放熱部を、複数のリードを連結するタイ
バーの一部を残すことで形成しているので、特別の加工
工程を経ることなく、従来のタイバーカットの工程を利
用することができる。As described above, according to the resin-encapsulated semiconductor device of the present invention, according to the resin-encapsulated semiconductor device of the present invention, the heat dissipation portion is formed in a part of the lead portion. Therefore, the heat radiation amount can be improved as compared with the conventional resin-sealed semiconductor device. Further, since the heat dissipation portion for heat dissipation formed on a part of the lead is formed by leaving a part of the tie bar connecting the plurality of leads, a conventional tie bar is not required to be processed. A cutting process can be used.
【図１】本発明の樹脂封止型半導体装置を示す説明図。FIG. 1 is an explanatory view showing a resin-sealed semiconductor device of the present invention.
【図２】本発明の樹脂封止型半導体装置の製造方法を示
す説明図。FIG. 2 is an explanatory view showing a method for manufacturing a resin-sealed semiconductor device of the present invention.
【図３】本発明の他の樹脂封止型半導体装置を示す説明
図。FIG. 3 is an explanatory view showing another resin-sealed semiconductor device of the present invention.
【図４】従来の樹脂封止型半導体装置を示す説明図。FIG. 4 is an explanatory diagram showing a conventional resin-sealed semiconductor device.
１ 半導体素子 ２ 素子搭載部 ３ リード ４ 金属細線 ５ 樹脂封止部 ７ 放熱部 ８ タイバー ９ フレーム 図４ 図１ 図２ 図３ 1 semiconductor element 2 element mounting portion 3 lead 4 thin metal wire 5 resin sealing portion 7 heat radiating portion 8 tie bar 9 frame FIG.
Claims (3)
複数のリードの少なくとも一つに設けられた素子搭載部
と、前記素子搭載部に固定された半導体素子とを有し、
前記半導体素子と素子搭載部が樹脂封止部で被覆された
樹脂封止型半導体装置において、前記リードの基板挿入
側の一部に放熱部が形成されていることを特徴とする樹
脂封止型半導体装置。1. A plurality of leads extending in the same direction, an element mounting portion provided on at least one of the plurality of leads, and a semiconductor element fixed to the element mounting portion,
In the resin-sealed semiconductor device in which the semiconductor element and the element mounting portion are covered with a resin-sealed portion, a heat-dissipating portion is formed in a part of the lead on the board insertion side. Semiconductor device.
複数のリードを連結するタイバーの一部を残すことで形
成されていることを特徴とする請求項１記載の樹脂封止
型半導体装置。2. A heat dissipation portion formed on a part of the lead,
The resin-encapsulated semiconductor device according to claim 1, wherein the resin-sealed semiconductor device is formed by leaving a part of a tie bar connecting a plurality of leads.
間の短絡を防止することを特徴とする請求項１記載の樹
脂封止型半導体装置。3. The resin-sealed semiconductor device according to claim 1, wherein the heat dissipation portion is bent to prevent a short circuit between adjacent leads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8145547A JPH09331006A (en) | 1996-06-07 | 1996-06-07 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8145547A JPH09331006A (en) | 1996-06-07 | 1996-06-07 | Resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09331006A true JPH09331006A (en) | 1997-12-22 |
Family
ID=15387712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8145547A Pending JPH09331006A (en) | 1996-06-07 | 1996-06-07 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09331006A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014160773A (en) * | 2013-02-20 | 2014-09-04 | Nichia Chem Ind Ltd | Light-emitting device |
| JP2018041769A (en) * | 2016-09-05 | 2018-03-15 | 株式会社デンソー | Semiconductor device |
-
1996
- 1996-06-07 JP JP8145547A patent/JPH09331006A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014160773A (en) * | 2013-02-20 | 2014-09-04 | Nichia Chem Ind Ltd | Light-emitting device |
| JP2018041769A (en) * | 2016-09-05 | 2018-03-15 | 株式会社デンソー | Semiconductor device |
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