JPH09316649A - Electroless plating solution - Google Patents
Electroless plating solutionInfo
- Publication number
- JPH09316649A JPH09316649A JP13153496A JP13153496A JPH09316649A JP H09316649 A JPH09316649 A JP H09316649A JP 13153496 A JP13153496 A JP 13153496A JP 13153496 A JP13153496 A JP 13153496A JP H09316649 A JPH09316649 A JP H09316649A
- Authority
- JP
- Japan
- Prior art keywords
- plating solution
- electroless plating
- ion
- reducing agent
- complexing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、金属や絶縁体等の
表面に高機能性を付与するＣｕ−ＮｉまたはＣｕ−Ｃｏ
の２元合金皮膜を析出させるための無電解めっき液に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to Cu-Ni or Cu-Co which imparts high functionality to the surface of a metal or an insulator.
The present invention relates to an electroless plating solution for depositing a binary alloy film of
【０００２】[0002]
【従来の技術】近年、無電解めっき技術の進歩はめざま
しいものがあり、電子部品の高機能化や高性能化、低コ
スト化の手段としてその重要性はますます増大してい
る。2. Description of the Related Art In recent years, the progress of electroless plating technology has been remarkable, and its importance is increasing more and more as a means for improving the functionality, performance and cost of electronic parts.
【０００３】とりわけ、Ｃｕ−Ｎｉ、Ｃｕ−Ｃｏ合金皮
膜は、電気特性や耐食性に優れた金属皮膜として抵抗材
料や電極材料または接点材料としてその用途が拡大して
いる。In particular, Cu-Ni and Cu-Co alloy coatings are widely used as resistance materials, electrode materials or contact materials as metal coatings excellent in electrical characteristics and corrosion resistance.
【０００４】従来、Ｃｕ−ＮｉやＣｕ−Ｃｏ合金皮膜を
無電解めっきによって析出させるためのめっき液として
は、２価のＣｕイオンおよび２価のＮｉイオンまたはＣ
ｏイオンをクエン酸ナトリウムや酢酸ナトリウムなどの
錯化剤によって錯体を形成し、還元剤に次亜リン酸ナト
リウムを使用したものが多く使われており、８０〜９０
℃の高温中でめっきを行うものである。Conventionally, as a plating solution for depositing a Cu-Ni or Cu-Co alloy coating by electroless plating, divalent Cu ions and divalent Ni ions or C are used.
It is often used that the o-ion forms a complex with a complexing agent such as sodium citrate or sodium acetate, and sodium hypophosphite is used as the reducing agent.
Plating is performed at a high temperature of ℃.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、このよ
うな無電解めっき液によって析出したＣｕ−Ｎｉおよび
Ｃｕ−Ｃｏ合金皮膜は、皮膜の還元析出反応において、
次亜リン酸ナトリウム中に含まれるリン元素（Ｐ）が必
然的に皮膜中に共析して、Ｃｕ−Ｎｉ−ＰやＣｕ−Ｃｏ
−Ｐの３元合金となり、これによって合金皮膜の諸特
性、即ち、はんだ付け性や、電気的諸特性の低下、さら
には、合金皮膜を熱処理した場合に、ＮｉまたはＣｏ金
属とＰの結晶化が進行して、合金皮膜が脆くなる等の問
題点があった。However, the Cu-Ni and Cu-Co alloy coatings deposited by such an electroless plating solution are
The elemental phosphorus (P) contained in sodium hypophosphite is inevitably co-deposited in the film, resulting in Cu-Ni-P and Cu-Co.
It becomes a ternary alloy of -P, whereby various properties of the alloy film, that is, solderability and various electrical properties are deteriorated, and further, when the alloy film is heat treated, crystallization of Ni or Co metal and P However, there was a problem that the alloy film became brittle.
【０００６】本発明は、これらの問題点を解決し、はん
だ付け性や電気的特性に優れ、熱処理によって脆くなら
ないＣｕ−ＮｉおよびＣｕ−Ｃｏの２元合金皮膜を得る
ことを目的とした無電解めっき液を提供するものであ
る。The present invention aims to solve these problems and obtain a binary alloy film of Cu-Ni and Cu-Co which is excellent in solderability and electrical characteristics and does not become brittle by heat treatment. A plating solution is provided.
【０００７】[0007]
【課題を解決するための手段】この問題点を解決するた
めに本発明は、２価の銅イオン（Ｃｕ2+）と２価のニッ
ケルイオン（Ｎｉ2+）またはコバルトイオン（Ｃｏ2+）
と、前記各金属イオンの共通の錯化剤であり、かつ、Ｎ
ｉ2+及びＣｏ2+と錯体形成能力が比較的弱い錯化剤と、
銅の還元析出に対して触媒活性を有した還元剤とを基本
成分としたものに、必要に応じて少量の安定化剤と界面
活性剤を添加して成る無電解めっき液であり、この無電
解めっき液によって、はんだ付け性や電気的特性に優れ
かつ、熱処理による特性劣化が生じないＣｕ−Ｎｉおよ
びＣｕ−Ｃｏの２元合金皮膜が得られるものである。In order to solve this problem, the present invention provides a divalent copper ion (Cu 2+ ) and a divalent nickel ion (Ni 2+ ) or a cobalt ion (Co 2+ ).
And a common complexing agent for each metal ion, and N
a complexing agent having a relatively weak complex forming ability with i 2+ and Co 2+ ,
This is an electroless plating solution in which a reducing agent having catalytic activity for reducing and depositing copper is used as a basic component, and if necessary, a small amount of a stabilizer and a surfactant are added. The electrolytic plating solution provides a Cu-Ni and Cu-Co binary alloy film which is excellent in solderability and electrical characteristics and does not deteriorate in characteristics due to heat treatment.
【０００８】[0008]
【発明の実施の形態】本発明の請求項１に記載の発明
は、２価の銅イオン（Ｃｕ2+）と２価のニッケルイオン
（Ｎｉ2+）またはコバルトイオン（Ｃｏ2+）と、前記各
金属イオンの共通の錯化剤であり、かつＮｉ2+及びＣｏ
2+と錯体形成能力の弱い錯化剤と、銅の還元析出に対し
て触媒活性を有する還元剤とを基本成分としたものに、
必要に応じて安定化剤及び界面活性剤を添加した無電解
めっき液であり、この無電解めっき液によって、不純物
の共析がない高純度のＣｕ−ＮｉおよびＣｕ−Ｃｏの２
元合金皮膜が得られるので、皮膜のはんだ付け性や電気
特性等が改善される作用を有するものである。BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention comprises a divalent copper ion (Cu 2+ ) and a divalent nickel ion (Ni 2+ ) or a cobalt ion (Co 2+ ), Ni 2+ and Co, which are common complexing agents for the respective metal ions
2+ with a complexing agent having a weak complex-forming ability, and a reducing agent having a catalytic activity for reducing and depositing copper as a basic component,
It is an electroless plating solution to which a stabilizer and a surfactant are added as required, and by this electroless plating solution, high purity Cu-Ni and Cu-Co containing no impurities eutectoid can be obtained.
Since the original alloy film is obtained, it has the effect of improving the solderability and electrical characteristics of the film.
【０００９】請求項２に記載の発明は、錯化剤として、
トリエタノールアミン、グリセリン、ソルビトールまた
はそれらの誘導体のうちの一つを使用した無電解めっき
液であり、これらの錯化剤を使用することにより、Ｃｕ
と共に、Ｎｉ及びＣｏの還元析出反応が促進し、Ｃｕ−
ＮｉおよびＣｕ−Ｃｏから成る２元合金皮膜が形成でき
る作用を有するものである。The invention according to claim 2 is, as a complexing agent,
It is an electroless plating solution using one of triethanolamine, glycerin, sorbitol or their derivatives. By using these complexing agents, Cu
At the same time, the reduction precipitation reaction of Ni and Co is promoted, and Cu-
It has the function of forming a binary alloy film composed of Ni and Cu—Co.
【００１０】請求項３に記載の発明は、還元剤としてホ
ルムアルデヒドまたはグリオキシル酸、またはそれらの
誘導体のうちの一つを使用した無電解めっき液であり、
この還元剤を使用することによって、析出した合金皮膜
への不純物元素の共析がなく、高純度Ｃｕ−Ｎｉおよび
Ｃｕ−Ｃｏの２元合金皮膜が得られる作用を有するもの
である。The invention according to claim 3 is an electroless plating solution using formaldehyde, glyoxylic acid, or one of their derivatives as a reducing agent,
By using this reducing agent, it is possible to obtain a high-purity binary alloy film of Cu—Ni and Cu—Co without causing eutectoid elements in the deposited alloy film.
【００１１】請求項４に記載の発明は、２価の銅イオン
濃度（Ｃｕ2+）を０．００１〜０．２mol／ｌ、２価ニ
ッケルイオン（Ｎｉ2+）またはコバルトイオン（Ｃ
ｏ2+）濃度を０．００９〜０．８mol／ｌ、錯化剤濃度
を０．１〜１．０mol／ｌ、還元剤濃度を０．０１〜
０．１mol／ｌの範囲に調合し、ｐＨを７．０〜１３．
０の範囲に調整した無電解めっき液であり、各成分濃度
を上記範囲に調合することにより、組成比率の異なるＣ
ｕ−Ｎｉ、Ｃｕ−Ｃｏ合金皮膜の形成を可能とする作用
を有するものである。According to the fourth aspect of the present invention, the divalent copper ion concentration (Cu 2+ ) is 0.001 to 0.2 mol / l, the divalent nickel ion (Ni 2+ ) or the cobalt ion (C 2
o 2+ ) concentration is 0.009-0.8 mol / l, complexing agent concentration is 0.1-1.0 mol / l, reducing agent concentration is 0.01-
It was prepared in the range of 0.1 mol / l and the pH was 7.0 to 13.
It is an electroless plating solution adjusted to a range of 0, and by adjusting the concentration of each component to the above range, C having a different composition ratio can be obtained.
It has the effect of enabling the formation of a u-Ni, Cu-Co alloy film.
【００１２】請求項５に記載の発明は、安定化剤とし
て、２，２’ビピリジル、シアン化合物、フェロシアン
化合物、フェナントロリン、チオ尿素、メルカプトベン
ゾチアゾール、チオグリコール酸のうちのどれか一つを
１〜１０００mg/ｌ添加した無電解めっき液であり、こ
れらの安定化剤を添加することによって、めっき液の分
解を抑制し、緻密な結晶構造を有するＣｕ−Ｎｉまたは
Ｃｕ−Ｃｏの２元合金皮膜の析出を可能とする作用を有
するものである。According to the invention of claim 5, any one of 2,2'-bipyridyl, a cyanide compound, a ferrocyanine compound, a phenanthroline, a thiourea, a mercaptobenzothiazole and a thioglycolic acid is used as a stabilizer. 1 to 1000 mg / l added electroless plating solution, by adding these stabilizers, decomposition of the plating solution is suppressed and Cu-Ni or Cu-Co binary alloy having a dense crystal structure It has the effect of enabling the deposition of a film.
【００１３】請求項６および７に記載の発明は、界面活
性剤として、非イオン系界面活性剤のうちの一つである
ポリエチレングリコールを１〜１０００ｍｇ／ｌ加えた
無電解めっき液であり、界面活性剤を添加することによ
って被めっき体へのめっきの付き回り性が著しく向上す
る作用を有するものである。The invention according to claims 6 and 7 is an electroless plating solution in which 1 to 1000 mg / l of polyethylene glycol, which is one of nonionic surfactants, is added as a surfactant. The addition of the activator has the effect of significantly improving the throwing power of the plating on the object to be plated.
【００１４】以下、本発明の実施の形態１について説明
する。 （実施の形態１）本発明による無電解めっき液の一例と
して、Ｃｕ−Ｎｉの２元合金皮膜を析出させるための無
電解めっき液の成分及び組成の一例を下記に示した。The first embodiment of the present invention will be described below. (Embodiment 1) As an example of an electroless plating solution according to the present invention, an example of components and composition of an electroless plating solution for depositing a Cu-Ni binary alloy film is shown below.
【００１５】 硫酸銅（Ｃｕ2+）…………………………０．００２〜０．０２mol／ｌ 硫酸ニッケル（Ｎｉ2+）…………………０．１mol／ｌ トリエタノールアミン……………………０．２mol／ｌ ホルムアルデヒド…………………………０．０６mol／ｌ ２，２’ビピリジル………………………２０mg／ｌ ポリエチレングリコール…………………５０mg／ｌ ｐＨ（ＮａＯＨにて調整）………………１３ 液温度………………………………………３０℃ 本実施の形態１における無電解めっき液は、２価のＣｕ
2+イオンとして硫酸銅を０．００２〜０．０２mol／
ｌ、２価のＮｉ2+イオンとして硫酸ニッケルを０．１mo
l／ｌの範囲に調合し、Ｃｕ2+及びＮｉ2+の錯化剤とし
て、Ｎｉ2+との錯体形成能力が比較的弱いトリエタノー
ルアミンを使用して０．２mol／ｌに調合し、さらに還
元剤としてホルムアルデヒドを０．０６mol／ｌの割合
に調合し、水酸化ナトリウムを使用して液のｐＨを１３
に調整して、さらに安定化剤として、２，２’ビピリジ
ルを２０mg／ｌ、界面活性剤としてポリエチレングリコ
ールを５０mg／ｌの割合に添加した。Copper sulphate (Cu 2+ ) ………………………… 0.002-0.02 mol / l Nickel sulphate (Ni 2+ ) …………………… 0.1 mol / l triethanol Amine …………………… 0.2 mol / l formaldehyde ………………………… 0.06 mol / l 2,2 'bipyridyl ………………………… 20 mg / l polyethylene glycol… ……………… 50 mg / l pH (adjusted with NaOH) …………………………………………………………………………………… 30 ° C Electroless electrolysis in the first embodiment The plating solution is divalent Cu
0.002~0.02mol copper sulfate as 2+ ion /
1, 0.1 mol of nickel sulfate as divalent Ni 2+ ion
1 / l range, 0.2 mol / l was prepared by using triethanolamine, which has a relatively weak ability to form a complex with Ni 2+ , as a complexing agent for Cu 2+ and Ni 2+ , Further, formaldehyde was mixed as a reducing agent at a ratio of 0.06 mol / l, and sodium hydroxide was used to adjust the pH of the solution to 13
In addition, 2,2'-bipyridyl was added as a stabilizer in an amount of 20 mg / l, and polyethylene glycol as a surfactant was added in an amount of 50 mg / l.
【００１６】そして、この無電解めっき液を使用し、液
温度を３０℃に調整し、液の攪拌を十分行いながらパラ
ジウムによる活性化処理を施したアルミナ基板を被めっ
き体として浸漬し、Ｃｕ−Ｎｉ合金皮膜を析出させた。Using this electroless plating solution, the solution temperature was adjusted to 30 ° C., and an alumina substrate which had been activated with palladium while sufficiently stirring the solution was immersed as a plated object, and Cu-- A Ni alloy film was deposited.
【００１７】本実施の形態１による無電解めっき液のＣ
ｕとＮｉの析出比率を図１に示したが、本めっき液では
Ｃｕの還元析出が優先するが、Ｎｉの析出量は最大で５
０mol％のものが得られた。C of the electroless plating solution according to the first embodiment
The precipitation ratio of u and Ni is shown in Fig. 1. In the present plating solution, reduction precipitation of Cu takes precedence, but the maximum amount of Ni precipitation is 5
0 mol% was obtained.
【００１８】尚、この無電解めっき液において、錯化剤
としては、トリエタノールアミンのみならずグリセリ
ン、ソルビトール及びそれらの誘導体等を使用してもＣ
ｕ−Ｎｉ合金皮膜の析出が可能であり、還元剤として
は、ホルムアルデヒドのみならずグリオキシル酸はたは
それらの誘導体を使用してもＣｕ−Ｎｉ合金皮膜の析出
が可能であった。In this electroless plating solution, as the complexing agent, not only triethanolamine but also glycerin, sorbitol and their derivatives can be used.
It was possible to deposit the u-Ni alloy coating, and it was possible to deposit the Cu-Ni alloy coating not only with formaldehyde but also with glyoxylic acid or their derivatives as the reducing agent.
【００１９】また一方、安定化剤及び界面活性剤として
は、２，２’ビピリジルやポリエチレングリコールのみ
ならず、通常の無電解銅めっき及び無電解ニッケルめっ
きに使われる安定化剤や界面活性剤が使用可能であり、
本実施の形態１では、安定化剤として、２，２’ビピリ
ジル以外に、シアン化化合物、フェロシアン化合物、フ
ェナントロリン、チオ尿素、メルカプトベンゾチアゾー
ル、チオグリコール酸等を使用することによって液の安
定化をはかるもとができると共に、界面活性剤としては
ポリエチレングリコールの誘導体を使用することによっ
て皮膜の付き回り性が大幅に向上できる効果が得られる
ことを確認した。On the other hand, as the stabilizer and the surfactant, not only 2,2'-bipyridyl and polyethylene glycol but also the stabilizer and the surfactant used in ordinary electroless copper plating and electroless nickel plating are used. Is available,
In the first embodiment, as a stabilizer, a cyanide compound, a ferrocyanine compound, phenanthroline, thiourea, mercaptobenzothiazole, thioglycolic acid, or the like is used as a stabilizer to stabilize the liquid. It was confirmed that the effect of significantly improving the throwing power of the film can be obtained by using a polyethylene glycol derivative as the surfactant.
【００２０】また一方、Ｃｕ−Ｎｉ合金皮膜が析出でき
る各成分の濃度範囲としては、Ｃｕ 2+は、０．００２〜
０．２mol／ｌ、Ｎｉ2+は０．００９〜０．８mol／ｌ、
錯化剤は０．１〜１．０mol／ｌ、還元剤は０．０１〜
０．１mol／ｌ、安定化剤は１〜１０００mg／ｌ、界面
活性剤は１〜１０００mg／ｌの範囲でＣｕ−Ｎｉの還元
析出が可能であり、この濃度範囲からはずれると、めっ
き反応が生じなかったり、液の分解が生じた。On the other hand, a Cu-Ni alloy film can be deposited.
The concentration range of each component is Cu 2+Is 0.002-
0.2 mol / l, Ni2+Is 0.009 to 0.8 mol / l,
Complexing agent is 0.1-1.0 mol / l, reducing agent is 0.01-
0.1 mol / l, stabilizer is 1-1000 mg / l, interface
The activator reduces Cu-Ni in the range of 1 to 1000 mg / l.
Precipitation is possible, and if the concentration is out of this range,
Reaction did not occur, or the liquid decomposed.
【００２１】そして、液のｐＨは、７．０〜１３．０と
比較的広範囲の領域でめっきが可能であり、液温度は２
０〜９０℃の範囲で、外観の良好なＣｕ−Ｎｉ合金の析
出が可能であった。The pH of the liquid is 7.0 to 13.0, and plating is possible in a relatively wide range, and the liquid temperature is 2
In the range of 0 to 90 ° C, it was possible to deposit a Cu-Ni alloy having a good appearance.
【００２２】このように、本発明による無電解めっき液
は、２価のＣｕ2+と２価のＮｉ2+の錯化剤として、Ｃｕ
2+と錯体形成が可能で、かつＮｉ2+とは比較的錯体形成
能力の弱い錯化剤とすることによって、銅の還元析出に
対して触媒活性を備えたホルムアルデヒドや、グリオキ
シル酸またはそれらの誘導体からなる還元剤でＣｕとＮ
ｉ還元析出を可能としたものであり、その結果として、
析出皮膜中にリン（Ｐ）等の不純物の共析がなく、高純
度のＣｕ−Ｎｉの２元合金皮膜が得られるものである。As described above, the electroless plating solution according to the present invention uses Cu as a complexing agent for divalent Cu 2+ and divalent Ni 2+.
By using a complexing agent capable of forming a complex with 2+ and having a relatively weak complex-forming ability with Ni 2+ , formaldehyde, glyoxylic acid, or a compound thereof having catalytic activity for reduction precipitation of copper can be obtained. Reducing agent consisting of a derivative of Cu and N
i It is possible to reduce precipitation, and as a result,
There is no co-deposition of impurities such as phosphorus (P) in the deposited film, and a highly pure Cu-Ni binary alloy film can be obtained.
【００２３】本発明によって得られたＣｕ−Ｎｉ合金皮
膜をＸ線回折試験によって不純物の共析有無を解析した
が、Ｃｕ，Ｎｉ以外は全く検出されず、極めて純度の高
いＣｕ−Ｎｉの２元合金皮膜であることが確認できた。The Cu-Ni alloy film obtained by the present invention was analyzed for the presence or absence of co-deposition of impurities by an X-ray diffraction test. However, only Cu and Ni were detected at all, and Cu-Ni binary having a very high purity was analyzed. It was confirmed to be an alloy film.
【００２４】尚、以上の説明では、Ｃｕ−Ｎｉ合金皮膜
を析出させるための無電解めっき液について説明した
が、２価ニッケル金属イオン（Ｎｉ2+）のかわりに２価
のコバルト金属イオン（Ｃｏ2+）として硫酸コバルトを
上記硫酸ニッケルと同じ濃度範囲で調合した無電解めっ
き液についても実験を行ったが、その結果はＣｕ−Ｃｏ
の良好な２元合金皮膜が析出することが確認できた。In the above description, the electroless plating solution for depositing the Cu-Ni alloy film was described, but instead of the divalent nickel metal ion (Ni 2+ ), the divalent cobalt metal ion (Co 2+ ) Cobalt sulfate was mixed in the same concentration range as the above nickel sulfate, and the experiment was also conducted. The result was Cu-Co.
It was confirmed that a good binary alloy film of
【００２５】[0025]
【発明の効果】以上説明したように、本発明では、２価
の銅イオンと２価のニッケルまたはコバルトイオンの錯
体溶液に、銅の還元析出に対して触媒活性を有するホル
ムアルデヒドまたはグリオキシル酸を還元剤とした無電
解めっき液である。As described above, according to the present invention, formaldehyde or glyoxylic acid, which has a catalytic activity for reducing and depositing copper, is reduced to a complex solution of divalent copper ions and divalent nickel or cobalt ions. It is an electroless plating solution.
【００２６】従って、本発明では、従来例のように還元
剤に次亜リン酸ナトリウムを使用しないので、析出皮膜
中にリン元素等の不純物の共析がなく、高純度のＣｕ−
ＮｉやＣｕ−Ｃｏの２元合金皮膜が得られるので、皮膜
のはんだ付け性の低下や、電気抵抗値が高くなる等の問
題が解決され、かつ熱処理によって合金皮膜の劣化が防
止できる等の特別の効果が得られるものである。Therefore, in the present invention, unlike the conventional example, sodium hypophosphite is not used as the reducing agent, so that there is no co-deposition of impurities such as elemental phosphorus in the deposited film, and high purity Cu-
Since a binary alloy film of Ni or Cu-Co can be obtained, problems such as deterioration of solderability of the film and increase of electric resistance value can be solved, and deterioration of the alloy film due to heat treatment can be prevented. The effect of is obtained.
【図１】本発明の実施の形態１におけるＣｕ−Ｎｉ合金
皮膜の析出比率を示す図FIG. 1 is a diagram showing a deposition ratio of a Cu—Ni alloy film according to the first embodiment of the present invention.
Claims (7)
ケルイオン（Ｎｉ2+）またはコバルトイオン（Ｃｏ2+）
と、前記各金属イオンの共通の錯化剤であり、かつＮｉ
2+及びＣｏ2+と錯体形成能力の弱い錯化剤と、銅の還元
析出に対して触媒活性を有する還元剤とを基本成分とし
たものに、必要に応じて安定化剤及び界面活性剤を添加
した無電解めっき液。1. A divalent copper ion (Cu 2+ ) and a divalent nickel ion (Ni 2+ ) or a cobalt ion (Co 2+ ).
And a common complexing agent for each metal ion, and Ni
A complexing agent having a weak complexing ability with 2+ and Co 2+ and a reducing agent having a catalytic activity for the reduction and precipitation of copper as a basic component, and if necessary, a stabilizer and a surfactant. An electroless plating solution containing.
ン、グリセリン、ソルビトールまたはそれらの誘導体の
うちの一つを使用した請求項１記載の無電解めっき液。2. The electroless plating solution according to claim 1, wherein one of triethanolamine, glycerin, sorbitol or a derivative thereof is used as the complexing agent.
リオキシル酸またはそれらの誘導体のうちの一つを使用
した請求項１記載の無電解めっき液。3. The electroless plating solution according to claim 1, wherein one of formaldehyde, glyoxylic acid or a derivative thereof is used as the reducing agent.
０１〜０．２mol／ｌ、２価ニッケルイオン（Ｎｉ2+）
またはコバルトイオン（Ｃｏ2+）濃度を０．００９〜
０．８mol／ｌ、錯化剤濃度を０．１〜１．０mol／ｌ、
還元剤濃度を０．０１〜０．１mol／ｌとし、ｐＨを
７．０〜１３．０の範囲に調整した請求項１記載の無電
解めっき液。4. A divalent copper ion concentration (Cu 2+ ) of 0.0
01 to 0.2 mol / l, divalent nickel ion (Ni 2+ ).
Alternatively, the cobalt ion (Co 2+ ) concentration is 0.009-
0.8 mol / l, complexing agent concentration of 0.1-1.0 mol / l,
The electroless plating solution according to claim 1, wherein the reducing agent concentration is 0.01 to 0.1 mol / l, and the pH is adjusted to a range of 7.0 to 13.0.
ル、シアン化合物、フェロシアン化合物、フェナントロ
リン、チオ尿素、メルカプトベンゾチアゾール、チオグ
リコール酸のうちのどれか一つを１〜１０００mg／ｌ添
加した請求項１記載の無電解めっき液。5. As the stabilizer, 1 to 1000 mg / l of 2,2′-bipyridyl, a cyan compound, a ferrocyanine compound, phenanthroline, thiourea, mercaptobenzothiazole, or thioglycolic acid is added. The electroless plating solution according to claim 1.
活性剤を１〜１０００mg／ｌ加えた請求項１記載の無電
解めっき液。6. The electroless plating solution according to claim 1, wherein a nonionic surfactant is added in an amount of 1 to 1000 mg / l as the surfactant.
ングリコールである請求項６記載の無電解めっき液。7. The electroless plating solution according to claim 6, wherein the nonionic surfactant is polyethylene glycol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13153496A JPH09316649A (en) | 1996-05-27 | 1996-05-27 | Electroless plating solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13153496A JPH09316649A (en) | 1996-05-27 | 1996-05-27 | Electroless plating solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09316649A true JPH09316649A (en) | 1997-12-09 |
Family
ID=15060328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13153496A Pending JPH09316649A (en) | 1996-05-27 | 1996-05-27 | Electroless plating solution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09316649A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001046494A1 (en) * | 1999-12-22 | 2001-06-28 | Ebara Corporation | Electroless plating solution and method of forming wiring with the same |
| JP2007262394A (en) * | 2006-03-03 | 2007-10-11 | Mec Kk | Surface-treating agent |
| JP2009046761A (en) * | 2007-07-20 | 2009-03-05 | Mec Kk | Surface treatment agent |
| US7501014B2 (en) | 2006-07-07 | 2009-03-10 | Rohm And Haas Electronic Materials Llc | Formaldehyde free electroless copper compositions |
| US7527681B2 (en) | 2006-07-07 | 2009-05-05 | Rohm And Haas Electronic Materials Llp | Electroless copper and redox couples |
| US7611569B2 (en) | 2006-07-07 | 2009-11-03 | Rohm And Haas Electronic Materials Llc | Electroless copper compositions |
-
1996
- 1996-05-27 JP JP13153496A patent/JPH09316649A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001046494A1 (en) * | 1999-12-22 | 2001-06-28 | Ebara Corporation | Electroless plating solution and method of forming wiring with the same |
| JP2007262394A (en) * | 2006-03-03 | 2007-10-11 | Mec Kk | Surface-treating agent |
| US7501014B2 (en) | 2006-07-07 | 2009-03-10 | Rohm And Haas Electronic Materials Llc | Formaldehyde free electroless copper compositions |
| US7527681B2 (en) | 2006-07-07 | 2009-05-05 | Rohm And Haas Electronic Materials Llp | Electroless copper and redox couples |
| US7611569B2 (en) | 2006-07-07 | 2009-11-03 | Rohm And Haas Electronic Materials Llc | Electroless copper compositions |
| JP2009046761A (en) * | 2007-07-20 | 2009-03-05 | Mec Kk | Surface treatment agent |
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