JPH09316644A - Shower head nozzle of cvd device - Google Patents
Shower head nozzle of cvd deviceInfo
- Publication number
- JPH09316644A JPH09316644A JP12846096A JP12846096A JPH09316644A JP H09316644 A JPH09316644 A JP H09316644A JP 12846096 A JP12846096 A JP 12846096A JP 12846096 A JP12846096 A JP 12846096A JP H09316644 A JPH09316644 A JP H09316644A
- Authority
- JP
- Japan
- Prior art keywords
- shower head
- nozzle
- raw material
- head nozzle
- shower
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＣＶＤ装置のシャ
ワーヘッドノズルに関し、詳しくは、原料ガス（蒸気も
含む）をシャワーヘッド状のノズルから所定温度に加熱
されている基板に向けて噴出させ、原料の化学反応生成
物を基板上に堆積させて薄膜を形成するＣＶＤ装置にお
けるシャワーヘッドノズルの構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shower head nozzle of a CVD apparatus, and more specifically, a source gas (including vapor) is jetted from a shower head nozzle toward a substrate heated to a predetermined temperature, The present invention relates to the structure of a showerhead nozzle in a CVD apparatus that deposits a chemical reaction product of a raw material on a substrate to form a thin film.
【０００２】[0002]
【従来の技術】基板上に半導体薄膜を形成するＣＶＤ装
置として、図３に示すように、原料ガスを噴出するノズ
ル（シャワーヘッドノズル）１をシャワーヘッド状に形
成したシャワーヘッド式のＣＶＤ装置が知られている。
このシャワーヘッド式のＣＶＤ装置は、反応管２内に設
けられたサセプタ３上に基板４を載置し、ヒーター５で
サセプタ３を加熱することにより、基板４を所定温度、
例えば６００℃程度に加熱するとともに、シャワーヘッ
ドノズル１のシャワープレート１ａに設けた多数の噴出
孔６から原料ガスを噴出させ、該原料ガスを基板上で化
学反応させて生成物を堆積させることにより、基板面に
薄膜を形成するものである。2. Description of the Related Art As a CVD apparatus for forming a semiconductor thin film on a substrate, as shown in FIG. 3, there is a showerhead type CVD apparatus in which a nozzle (showerhead nozzle) 1 for ejecting a raw material gas is formed in a showerhead shape. Are known.
In this shower head type CVD apparatus, the substrate 4 is placed on the susceptor 3 provided in the reaction tube 2, and the heater 5 heats the susceptor 3 to bring the substrate 4 to a predetermined temperature.
For example, while heating to about 600 ° C., a raw material gas is ejected from a large number of ejection holes 6 provided in the shower plate 1a of the shower head nozzle 1, and the raw material gas is chemically reacted on the substrate to deposit a product. A thin film is formed on the substrate surface.
【０００３】上記シャワーヘッド式のＣＶＤ装置は、シ
ャワープレート１ａの略全面に設けた噴出孔６から原料
ガスを噴出させるため、比較的大径の基板上にも均一な
薄膜を形成することができ、例えば、８インチ以上の基
板に薄膜を形成する際に多く用いられている。In the above showerhead type CVD apparatus, since the raw material gas is ejected from the ejection holes 6 provided on substantially the entire surface of the shower plate 1a, it is possible to form a uniform thin film on a substrate having a relatively large diameter. For example, it is often used when forming a thin film on a substrate of 8 inches or more.
【０００４】[0004]
【発明が解決しようとする課題】このようなシャワーヘ
ッド式のＣＶＤ装置において、成膜速度を高めるために
は、シャワーヘッドノズル１をできるだけ基板４に近付
けることが望ましいが、シャワーヘッドノズル１を基板
４に近付け過ぎると、シャワーヘッドノズル１が基板４
からの輻射熱により加熱されて高温となり、原料の一部
がシャワーヘッドノズル１内あるいは噴出孔６から噴出
する際に熱分解したり相互反応したりすることがあっ
た。このようにシャワーヘッドノズル１部分で原料の熱
分解や相互反応を生じると、薄膜の成膜速度が低下する
だけでなく、熱分解や相互反応により生じた固形物が基
板面に落下して膜質を劣化させる原因となる。さらに、
シャワープレート１ａの中心部と周辺部とで温度差が発
生し、これによる悪影響も生じる。In such a showerhead type CVD apparatus, it is desirable to bring the showerhead nozzle 1 as close as possible to the substrate 4 in order to increase the film formation rate. 4 is too close, the showerhead nozzle 1 will move the substrate 4
There is a case where the material is heated by the radiant heat from the container to reach a high temperature, and when a part of the raw material is jetted in the shower head nozzle 1 or the jet holes 6, it is thermally decomposed or interacts with each other. When the thermal decomposition or mutual reaction of the raw material occurs in the shower head nozzle 1 portion as described above, not only the film forming rate of the thin film decreases, but also the solid matter generated by the thermal decomposition and mutual reaction falls on the substrate surface and the film quality is improved. Cause deterioration. further,
A temperature difference is generated between the central portion and the peripheral portion of the shower plate 1a, which has an adverse effect.
【０００５】一方、シャワーヘッドノズル１を基板４か
ら離し過ぎると、シャワーヘッドノズル１の温度が低下
するため、蒸気を利用する原料の場合は、シャワーヘッ
ドノズル１内で原料が凝縮してしまい、成膜速度の低下
や基板面への凝縮物の落下により膜質の低下を引き起こ
す。On the other hand, if the showerhead nozzle 1 is separated from the substrate 4 too much, the temperature of the showerhead nozzle 1 is lowered, so that in the case of a raw material utilizing steam, the raw material is condensed in the showerhead nozzle 1, The deterioration of the film quality is caused by the decrease in the film formation speed and the fall of the condensate on the substrate surface.
【０００６】例えば、ＢａＳｒＴｉＯ3 やＰｂＴｉＯ3
のように、ストロンチウムやバリウム，鉛等を含む薄膜
を形成する際には、原料としてＳｒ（ＤＰＭ）2 やＢａ
（ＤＰＭ）2 、Ｐｂ（ＤＰＭ）2 等を用いるが（ＤＰＭ
はジピバロイルメタナイトの略）、これらは、蒸気圧が
低いために流路等を１５０〜２００℃以上の温度に保持
して凝縮しないようにする必要があるとともに、３００
℃程度で熱分解や相互反応を生じるため、シャワーヘッ
ドノズル１の温度を３００℃以下に抑えておく必要もあ
った。For example, BaSrTiO 3 and PbTiO 3
As described above, when forming a thin film containing strontium, barium, lead, etc., Sr (DPM) 2 or Ba is used as a raw material.
(DPM) 2 , Pb (DPM) 2 and the like are used.
Is an abbreviation for dipivaloylmethanite), and since these have a low vapor pressure, it is necessary to keep the flow path and the like at a temperature of 150 to 200 ° C. or higher so as not to condense.
It is necessary to keep the temperature of the shower head nozzle 1 at 300 ° C. or lower because thermal decomposition and mutual reaction occur at about ° C.
【０００７】したがって、シャワーヘッドノズル１と基
板４との距離は、シャワーヘッドノズル１の温度が、原
料が凝縮しない１５０〜２００℃以上の温度で、かつ、
熱分解や相互反応を生じない３００℃以下になる位置に
制限されることになる。Therefore, the distance between the showerhead nozzle 1 and the substrate 4 is such that the temperature of the showerhead nozzle 1 is 150 to 200 ° C. or higher at which the raw material does not condense and
It will be limited to the position where the temperature is 300 ° C or lower, which does not cause thermal decomposition or mutual reaction.
【０００８】すなわち、従来のシャワーヘッド式のＣＶ
Ｄ装置で良好な膜厚及び組成分布を有する薄膜を形成す
るためには、使用する原料の種類や基板４の加熱温度等
によりシャワーヘッドノズル１と基板４との距離が制限
されることになり、基板の大きさが限定され、また、成
膜速度の向上にも限界があった。That is, a conventional shower head type CV
In order to form a thin film having a good film thickness and composition distribution with the D apparatus, the distance between the showerhead nozzle 1 and the substrate 4 is limited by the type of raw material used, the heating temperature of the substrate 4, and the like. However, the size of the substrate is limited, and there is a limit to the improvement of the film formation rate.
【０００９】そこで本発明は、シャワーヘッドノズルと
基板との距離を原料の種類や基板の大きさなどに応じて
任意に設定することができ、比較的大きな基板に対して
も良質な薄膜を短時間で形成することができるＣＶＤ装
置のシャワーヘッドノズルを提供することを目的として
いる。Therefore, according to the present invention, the distance between the showerhead nozzle and the substrate can be arbitrarily set according to the type of the raw material and the size of the substrate, and a thin film of good quality can be shortened even for a relatively large substrate. It is an object of the present invention to provide a shower head nozzle for a CVD apparatus that can be formed in a short time.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するた
め、本発明のＣＶＤ装置のシャワーヘッドノズルは、原
料ガスを噴出するシャワーヘッドノズルを、所定温度に
加熱された基板に対向配置したＣＶＤ装置のシャワーヘ
ッドノズルにおいて、該シャワーヘッドノズルに熱交換
手段を設けるとともに、シャワープレートの厚みを５ｍ
ｍ以上としたことを特徴としている。In order to achieve the above object, a shower head nozzle of a CVD apparatus of the present invention is a CVD apparatus in which a shower head nozzle for ejecting a raw material gas is arranged to face a substrate heated to a predetermined temperature. In the shower head nozzle, the heat exchange means is provided in the shower head nozzle, and the thickness of the shower plate is 5 m.
It is characterized in that it is m or more.
【００１１】また、シャワーヘッドノズルを、原料供給
管に連設するノズル本体と、該ノズル本体に着脱可能に
取付けられるシャワープレートとにより形成し、前記ノ
ズル本体に、シャワープレートの温度を原料の熱分解温
度、相互反応温度以下で、かつ、原料の凝縮温度以上の
温度範囲に冷却又は加熱するための熱交換用流体の流路
を設けるとともに、前記シャワープレートの厚みを５ｍ
ｍ以上としたことを特徴としている。Further, the shower head nozzle is formed by a nozzle main body connected to the raw material supply pipe and a shower plate detachably attached to the nozzle main body, and the temperature of the shower plate is fixed to the nozzle main body by the heat of the raw material. A flow path for a heat exchange fluid for cooling or heating to a temperature range below the decomposition temperature and the mutual reaction temperature and above the condensation temperature of the raw materials is provided, and the thickness of the shower plate is 5 m.
It is characterized in that it is m or more.
【００１２】[0012]
【発明の実施の形態】以下、本発明を、図面を参照して
さらに詳細に説明する。図１は本発明のシャワーヘッド
ノズルの一例を示す断面図、図２は図１のII−II線断面
図である。なお、ＣＶＤ装置の全体構成は、従来と同様
に構成できるので、詳細な説明は省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. FIG. 1 is a sectional view showing an example of the shower head nozzle of the present invention, and FIG. 2 is a sectional view taken along the line II-II of FIG. Since the entire structure of the CVD apparatus can be configured in the same manner as the conventional one, detailed description thereof will be omitted.
【００１３】このシャワーヘッドノズル１１は、原料供
給管１２に連設するノズル本体１３と、該ノズル本体１
３に着脱可能に取付けられるシャワープレート１４とに
より形成されており、ノズル本体１３の天板部１３ａ内
には、熱交換手段としての熱交換用流体を流通させる流
路１５が形成されている。この流路１５は、天板部１３
ａに流路となる溝を図２に示す形状で形成し、その上を
天板部１３ａに溶着される蓋材で密封し、流体の出入口
となる管１５ａ，１５ｂを接続したものである。The shower head nozzle 11 includes a nozzle body 13 connected to a raw material supply pipe 12 and the nozzle body 1.
3 and a shower plate 14 that is detachably attached to the nozzle body 3, and a flow path 15 for circulating a heat exchange fluid as heat exchange means is formed in the top plate portion 13a of the nozzle body 13. The flow path 15 is formed on the top plate portion 13.
A groove serving as a flow channel is formed in a in the shape shown in FIG. 2, the upper portion of which is sealed with a lid member welded to the top plate portion 13a, and pipes 15a and 15b serving as fluid inlets and outlets are connected.
【００１４】シャワープレート１４は、多数の原料噴出
孔１６，１６を有するもので、厚みが５ｍｍ以上の金属
板、例えば熱伝導の良好なアルミニウム合金で形成され
ている。このシャワープレート１４の厚みは、厚いほど
温度分布の解消には効果的であるが、必要以上に厚くす
ると原料噴出孔１６を通るガスの抵抗となり、さらに、
原料噴出孔１６の加工も困難になるため好ましくない。
したがって、シャワープレート１４の厚みは、シャワー
プレート１４の径や保持すべき温度範囲にもよるが、通
常は５〜１０ｍｍ程度、特に５〜７ｍｍ程度にすること
が好ましい。The shower plate 14 has a large number of raw material ejection holes 16, 16 and is formed of a metal plate having a thickness of 5 mm or more, for example, an aluminum alloy having good heat conduction. The thicker the shower plate 14 is, the more effective it is to eliminate the temperature distribution. However, if the shower plate 14 is thicker than necessary, the resistance of the gas passing through the raw material ejection holes 16 is increased.
Processing of the raw material ejection holes 16 also becomes difficult, which is not preferable.
Therefore, although the thickness of the shower plate 14 depends on the diameter of the shower plate 14 and the temperature range to be held, it is preferably about 5 to 10 mm, particularly preferably about 5 to 7 mm.
【００１５】また、ノズル本体１３とシャワープレート
１４とは、外周部に設けられるボルト１７により着脱可
能に組立てられる。このとき、両者の接合面は、良好な
熱伝導性を得るためにできるだけ平坦に仕上げることが
望ましく、接触面積も十分にとるようにすべきである。
さらに、ボルト１７も熱伝導の一つの要素となるため、
大径で長寸のものを用いることが望ましい。Further, the nozzle body 13 and the shower plate 14 are removably assembled by bolts 17 provided on the outer peripheral portion. At this time, it is desirable that the joining surfaces of the two be finished as flat as possible in order to obtain good thermal conductivity, and the contact area should be sufficient.
Furthermore, since the bolt 17 is also an element of heat conduction,
It is desirable to use a large diameter and long one.
【００１６】すなわち、両者の接合部は、流路１５を流
れる熱交換用流体により、ノズル本体１３を介してシャ
ワープレート１４を十分に冷却又は加熱できるような構
造及び形状に形成されるものであって、シャワーヘッド
ノズル１１全体の製造コストやシャワープレート１４を
着脱する際の作業性等を考慮して必要十分な熱伝導を行
えるようにする。That is, the joint between the two is formed to have a structure and a shape capable of sufficiently cooling or heating the shower plate 14 via the nozzle body 13 by the heat exchange fluid flowing through the flow passage 15. In view of the manufacturing cost of the showerhead nozzle 11 as a whole, workability when attaching and detaching the shower plate 14, and the like, necessary and sufficient heat conduction can be performed.
【００１７】このように、従来は、原料噴出孔１６の加
工性や流路抵抗を考慮して３〜４ｍｍの厚みで形成され
ていたシャワープレート１４の厚みを５ｍｍ以上にする
ことにより、シャワープレート１４の温度分布を小さく
することができ、流路１５を流れる熱交換流体によりシ
ャワープレート１４を含むシャワーヘッドノズル１１を
所望の温度に冷却又は加熱することが可能となる。As described above, the shower plate 14 is conventionally formed to have a thickness of 3 to 4 mm in consideration of the workability of the raw material ejection holes 16 and the flow path resistance. The temperature distribution of 14 can be reduced, and the shower head nozzle 11 including the shower plate 14 can be cooled or heated to a desired temperature by the heat exchange fluid flowing through the flow path 15.
【００１８】したがって、シャワーヘッドノズル１１を
基板に近付けても、基板やサセプタからの輻射熱により
シャワーヘッドノズル１１、特にこれらに対向するシャ
ワープレート１４が高温になることがないので、シャワ
ーヘッドノズル１１部分での原料の熱分解や相互反応を
防止できる。これにより、シャワーヘッドノズル１１を
基板に近付けて成膜することが可能となるため、成膜速
度を高めながら良質な薄膜を形成することができる。Therefore, even if the shower head nozzle 11 is brought close to the substrate, the temperature of the shower head nozzle 11, especially the shower plate 14 facing the shower head nozzle 11, does not rise to a high temperature due to the radiant heat from the substrate and the susceptor. It is possible to prevent thermal decomposition and mutual reaction of raw materials. As a result, the shower head nozzle 11 can be brought close to the substrate to form a film, so that a high quality thin film can be formed while increasing the film forming speed.
【００１９】また、基板の加熱温度が低いときや、シャ
ワーヘッドノズル１１を基板から離して成膜するときに
は、熱交換流体によりシャワーヘッドノズル１１を加熱
することにより、原料の凝縮等を防止することができ
る。Further, when the heating temperature of the substrate is low or when the showerhead nozzle 11 is separated from the substrate to form a film, the showerhead nozzle 11 is heated by a heat exchange fluid to prevent condensation of the raw materials. You can
【００２０】以上のように、原料供給管１２からシャワ
ーヘッドノズル１１内に流入し、シャワープレート１４
の原料噴出孔１６から基板（図示せず）に向かって噴出
する原料が熱分解したり、相互反応したり、凝縮したり
することを確実に防止することができるので、シャワー
ヘッドノズル１１と基板との距離を、原料の種類や基板
の大きさなどの成膜条件に応じた最適な距離に設定する
ことにより、大きな基板に対しても良質な薄膜を短時間
で形成することができる。また、シャワープレート１４
を着脱可能にしているので、その交換やメンテナンスも
容易であり、原料噴出孔１６の位置や径が異なるシャワ
ープレート１４を用いた成膜実験も容易に行うことがで
きる。As described above, the shower plate 14 flows into the shower head nozzle 11 from the raw material supply pipe 12.
Since it is possible to reliably prevent the raw material ejected from the raw material ejection holes 16 toward the substrate (not shown) from being thermally decomposed, interacting with each other, or condensed, the shower head nozzle 11 and the substrate By setting the distance between and to an optimum distance according to the film forming conditions such as the type of raw material and the size of the substrate, a good quality thin film can be formed in a short time even on a large substrate. Also, the shower plate 14
Since it is removable, the replacement and maintenance are easy, and the film forming experiment using the shower plate 14 in which the position and the diameter of the raw material ejection holes 16 are different can be easily performed.
【００２１】なお、本発明における熱交換手段は、シャ
ワーヘッドノズルの大きさなどに応じて適宜な位置に、
適宜な形状で設けることが可能であり、例えば、熱交換
流体を流す管状体をノズル本体の内外に張付けるように
してもよく、側面周壁に設けてもよい。さらに、熱交換
手段としての熱交換流体は、温度範囲や熱容量，コスト
等を考慮すれば、油が最適であるが、他の流体を用いる
ことも可能である。また、冷却又は加熱用の油等の熱交
換流体の温度や流量は、基板側からの輻射熱の量や許容
温度（最高、最低共）に応じて設定すればよく、特に限
定されるものではない。さらに、シャワープレートの原
料噴出孔は、従来と同様に形成することもできるが、加
工性や流路抵抗等を考慮して厚みに応じた形状にするこ
ともできる。The heat exchanging means in the present invention is provided at an appropriate position according to the size of the shower head nozzle, etc.
It can be provided in an appropriate shape. For example, a tubular body through which a heat exchange fluid flows may be attached inside or outside the nozzle body, or may be provided on the side peripheral wall. Further, as the heat exchange fluid as the heat exchange means, oil is most suitable in consideration of the temperature range, heat capacity, cost, etc., but other fluids can be used. The temperature and flow rate of the heat exchange fluid such as cooling or heating oil may be set according to the amount of radiant heat from the substrate side and the allowable temperature (both maximum and minimum), and are not particularly limited. . Further, the raw material ejection holes of the shower plate can be formed in the same manner as in the conventional case, but can also be formed in a shape corresponding to the thickness in consideration of workability, flow path resistance and the like.
【００２２】[0022]
【実施例】図１及び図２に示す構造のシャワーヘッドノ
ズル１１を用いて８インチ基板上にＳｒＴｉＯ3 薄膜を
作製した。原料にはＳｒ（ＤＰＭ）2 ，Ｔｉ（ＯｉＰ
ｒ）及びＯ2 を用いた。成膜圧力は５Ｔｏｒｒ、基板温
度は６００℃、総ガス流量は２ＳＬＭ、シャワープレー
ト１４の厚みは５ｍｍ、基板とシャワープレート１４と
の距離は１０ｍｍとした。EXAMPLE A SrTiO 3 thin film was formed on an 8-inch substrate using the shower head nozzle 11 having the structure shown in FIGS. 1 and 2. The raw materials are Sr (DPM) 2 , Ti (OiP
r) and O 2 were used. The deposition pressure was 5 Torr, the substrate temperature was 600 ° C., the total gas flow rate was 2 SLM, the shower plate 14 had a thickness of 5 mm, and the distance between the substrate and the shower plate 14 was 10 mm.
【００２３】その結果、流路１５に２００℃の油を流す
ことにより、シャワープレート１４の温度分布を２３０
±１０℃に制御することができ、膜厚分布±３％、組成
分布±５％の良質な薄膜を毎分２ｎｍの成膜速度で製作
することができた。As a result, the temperature distribution of the shower plate 14 is changed to 230 by flowing oil of 200 ° C. in the flow path 15.
It was possible to control the temperature to ± 10 ° C., and it was possible to manufacture a good quality thin film having a film thickness distribution of ± 3% and a composition distribution of ± 5% at a film forming rate of 2 nm per minute.
【００２４】一方、シャワープレート１４の厚みを３ｍ
ｍにしたところ、中心部が約３６０℃、周辺部が約２９
５℃になってしまい、成膜速度が毎分０．３ｎｍに低下
した。さらに、図３に示す従来のシャワーヘッドノズル
の場合は、中心部が約４５０℃、周辺部が約３５０℃に
昇温し、ノズル通過時に原料の全量が熱分解を起こして
しまい、基板上に膜を形成することができなかった。On the other hand, the thickness of the shower plate 14 is 3 m.
When set to m, the central part is about 360 ° C and the peripheral part is about 29 ° C.
The temperature became 5 ° C., and the film formation rate decreased to 0.3 nm / min. Further, in the case of the conventional shower head nozzle shown in FIG. 3, the central portion is heated to about 450 ° C. and the peripheral portion is heated to about 350 ° C., and the entire amount of the raw material is thermally decomposed when passing through the nozzle, and the temperature is increased on the substrate. No film could be formed.
【００２５】また、従来のシャワーヘッドノズルを基板
から８０ｍｍの位置にして同様の成膜操作を行ったとこ
ろ、シャワーヘッドノズルの温度が１６０℃となり、原
料の一部が凝縮してしまった。一方、図１及び図２に示
す構造のシャワーヘッドノズル１１において、流路１５
に２１０℃の油を流して加熱したところ、シャワープレ
ート１４の温度分布を２３０±１０℃に制御することが
でき、原料の凝縮がなくなり、膜厚分布，組成分布共に
良好な薄膜を得ることができた。Further, when the same film forming operation was performed with the conventional shower head nozzle at a position 80 mm from the substrate, the temperature of the shower head nozzle became 160 ° C. and part of the raw material was condensed. On the other hand, in the shower head nozzle 11 having the structure shown in FIGS.
When the oil of 210 ° C. is flowed to the inside to heat it, the temperature distribution of the shower plate 14 can be controlled to 230 ± 10 ° C., the condensation of the raw material is eliminated, and a thin film having good film thickness distribution and composition distribution can be obtained. did it.
【００２６】[0026]
【発明の効果】以上説明したように、本発明のＣＶＤ装
置のシャワーヘッドノズルによれば、シャワーヘッドノ
ズルを基板に近付けても、シャワーヘッドノズルの温度
を原料の熱分解温度、相互反応温度以下にすることがで
きるので、膜質を劣化させることなく成膜速度を向上さ
せることができる。また、必要に応じてシャワーヘッド
ノズルを加熱することもできるので、シャワーヘッドノ
ズル内での原料の凝縮も防止できる。したがって、シャ
ワーヘッドノズルと基板との距離を最適な条件にするこ
とができ、良質な薄膜を短時間で製作することができ
る。As described above, according to the shower head nozzle of the CVD apparatus of the present invention, even if the shower head nozzle is brought close to the substrate, the temperature of the shower head nozzle is lower than the thermal decomposition temperature of the raw material and the mutual reaction temperature. Therefore, the film formation rate can be improved without deteriorating the film quality. Moreover, since the shower head nozzle can be heated if necessary, condensation of the raw material in the shower head nozzle can be prevented. Therefore, the distance between the shower head nozzle and the substrate can be set to an optimum condition, and a good quality thin film can be manufactured in a short time.
【図１】 本発明のシャワーヘッドノズルの一例を示す
断面図である。FIG. 1 is a cross-sectional view showing an example of a shower head nozzle of the present invention.
【図２】 図１のII−II線断面図である。FIG. 2 is a sectional view taken along line II-II of FIG.
【図３】 シャワーヘッド式のＣＶＤ装置の一例を示す
断面図である。FIG. 3 is a sectional view showing an example of a shower head type CVD apparatus.
１１…シャワーヘッドノズル、１２…原料供給管、１３
…ノズル本体、１４…シャワープレート、１５…流路、
１６…原料噴出孔、１７…ボルト11 ... Shower head nozzle, 12 ... Raw material supply pipe, 13
... nozzle body, 14 ... shower plate, 15 ... flow path,
16 ... Raw material ejection hole, 17 ... Bolt
Claims (2)
ルを、所定温度に加熱された基板に対向配置したＣＶＤ
装置のシャワーヘッドノズルにおいて、該シャワーヘッ
ドノズルに熱交換手段を設けるとともに、シャワープレ
ートの厚みを５ｍｍ以上としたことを特徴とするＣＶＤ
装置のシャワーヘッドノズル。1. A CVD method in which a shower head nozzle for ejecting a raw material gas is arranged to face a substrate heated to a predetermined temperature.
In the shower head nozzle of the apparatus, the heat exchange means is provided in the shower head nozzle, and the thickness of the shower plate is 5 mm or more.
Equipment shower head nozzle.
ルを、所定温度に加熱された基板に対向配置したＣＶＤ
装置のシャワーヘッドノズルにおいて、該シャワーヘッ
ドノズルを、原料供給管に連設するノズル本体と、該ノ
ズル本体に着脱可能に取付けられるシャワープレートと
により形成し、前記ノズル本体に熱交換手段を設けると
ともに、前記シャワープレートの厚みを５ｍｍ以上とし
たことを特徴とするＣＶＤ装置のシャワーヘッドノズ
ル。2. A CVD method in which a shower head nozzle for ejecting a raw material gas is arranged to face a substrate heated to a predetermined temperature.
In a shower head nozzle of an apparatus, the shower head nozzle is formed by a nozzle body connected to a raw material supply pipe and a shower plate detachably attached to the nozzle body, and the nozzle body is provided with heat exchange means. A showerhead nozzle for a CVD apparatus, wherein the shower plate has a thickness of 5 mm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12846096A JPH09316644A (en) | 1996-05-23 | 1996-05-23 | Shower head nozzle of cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12846096A JPH09316644A (en) | 1996-05-23 | 1996-05-23 | Shower head nozzle of cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09316644A true JPH09316644A (en) | 1997-12-09 |
Family
ID=14985267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12846096A Pending JPH09316644A (en) | 1996-05-23 | 1996-05-23 | Shower head nozzle of cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09316644A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000195807A (en) * | 1998-12-28 | 2000-07-14 | Kyocera Corp | Gas inlet nozzle for semiconductor manufacturing apparatus |
| WO2001012875A1 (en) * | 1999-08-11 | 2001-02-22 | Tokyo Electron Limited | Film forming device |
| US6508258B1 (en) * | 1998-10-05 | 2003-01-21 | Lorimer D'arcy Harold | Method and apparatus for cleaning flat workpieces within a semiconductor manufacturing system |
| JP2004193509A (en) * | 2002-12-13 | 2004-07-08 | Watanabe Shoko:Kk | Shower nozzle and film-forming apparatus |
| US6852168B2 (en) * | 2000-06-24 | 2005-02-08 | Ips Ltd. | Reactor for depositing thin film on wafer |
| EP1505173A1 (en) | 2003-08-06 | 2005-02-09 | Ulvac, Inc. | Shower head, device and method for manufacturing thin films |
| JP2005518104A (en) * | 2002-02-22 | 2005-06-16 | アイクストロン、アーゲー | Semiconductor layer deposition process and apparatus |
| EP1661169A1 (en) * | 2003-08-29 | 2006-05-31 | IPS Ltd | Method for depositing thin film on wafer |
| KR100854995B1 (en) * | 2005-03-02 | 2008-08-28 | 삼성전자주식회사 | High density plasma chemical vapor deposition apparatus |
| KR100860588B1 (en) * | 2007-04-06 | 2008-09-26 | 세메스 주식회사 | Nozzle assembly and substrate processing apparatus including the nozzle, assembly and method for processing the substrate |
| WO2009041774A3 (en) * | 2007-09-28 | 2009-05-28 | Hyundai Calibration & Certific | Electrospray vaporizer |
| US7618493B2 (en) | 2003-08-06 | 2009-11-17 | Ulvac, Inc. | Device and method for manufacturing thin films |
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| WO2022051079A1 (en) * | 2020-09-02 | 2022-03-10 | Applied Materials, Inc. | Showerhead design to control stray deposition |
-
1996
- 1996-05-23 JP JP12846096A patent/JPH09316644A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6508258B1 (en) * | 1998-10-05 | 2003-01-21 | Lorimer D'arcy Harold | Method and apparatus for cleaning flat workpieces within a semiconductor manufacturing system |
| JP2000195807A (en) * | 1998-12-28 | 2000-07-14 | Kyocera Corp | Gas inlet nozzle for semiconductor manufacturing apparatus |
| WO2001012875A1 (en) * | 1999-08-11 | 2001-02-22 | Tokyo Electron Limited | Film forming device |
| JP2001053030A (en) * | 1999-08-11 | 2001-02-23 | Tokyo Electron Ltd | Film forming device |
| US6797068B1 (en) | 1999-08-11 | 2004-09-28 | Tokyo Electron Limited | Film forming unit |
| US6852168B2 (en) * | 2000-06-24 | 2005-02-08 | Ips Ltd. | Reactor for depositing thin film on wafer |
| JP2005518104A (en) * | 2002-02-22 | 2005-06-16 | アイクストロン、アーゲー | Semiconductor layer deposition process and apparatus |
| JP2004193509A (en) * | 2002-12-13 | 2004-07-08 | Watanabe Shoko:Kk | Shower nozzle and film-forming apparatus |
| US7618493B2 (en) | 2003-08-06 | 2009-11-17 | Ulvac, Inc. | Device and method for manufacturing thin films |
| US8262798B2 (en) | 2003-08-06 | 2012-09-11 | Ulvac, Inc. | Shower head, device and method for manufacturing thin films |
| KR101247918B1 (en) * | 2003-08-06 | 2013-03-26 | 가부시키가이샤 알박 | Shower head, apparatus of manufacturing thin film and method for manufacturing thin film |
| CN101509129A (en) * | 2003-08-06 | 2009-08-19 | 爱发科股份有限公司 | Integral structure body of film forming groove upper cap and show head |
| EP1505173A1 (en) | 2003-08-06 | 2005-02-09 | Ulvac, Inc. | Shower head, device and method for manufacturing thin films |
| EP1661169A4 (en) * | 2003-08-29 | 2008-08-13 | Ips Ltd | Method for depositing thin film on wafer |
| EP1661169A1 (en) * | 2003-08-29 | 2006-05-31 | IPS Ltd | Method for depositing thin film on wafer |
| KR100854995B1 (en) * | 2005-03-02 | 2008-08-28 | 삼성전자주식회사 | High density plasma chemical vapor deposition apparatus |
| KR100860588B1 (en) * | 2007-04-06 | 2008-09-26 | 세메스 주식회사 | Nozzle assembly and substrate processing apparatus including the nozzle, assembly and method for processing the substrate |
| WO2009041774A3 (en) * | 2007-09-28 | 2009-05-28 | Hyundai Calibration & Certific | Electrospray vaporizer |
| US9899210B2 (en) | 2015-10-20 | 2018-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical vapor deposition apparatus and method for manufacturing semiconductor device using the same |
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| JP2018082063A (en) * | 2016-11-16 | 2018-05-24 | 株式会社ニューフレアテクノロジー | Film forming apparatus |
| WO2022051079A1 (en) * | 2020-09-02 | 2022-03-10 | Applied Materials, Inc. | Showerhead design to control stray deposition |
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