JPH09312973A - Dc-dc converter - Google Patents

Dc-dc converter

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Publication number
JPH09312973A
JPH09312973A JP18722196A JP18722196A JPH09312973A JP H09312973 A JPH09312973 A JP H09312973A JP 18722196 A JP18722196 A JP 18722196A JP 18722196 A JP18722196 A JP 18722196A JP H09312973 A JPH09312973 A JP H09312973A
Authority
JP
Japan
Prior art keywords
series
circuit
diode
auxiliary
snubber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18722196A
Other languages
Japanese (ja)
Other versions
JP3656779B2 (en
Inventor
Masakazu Gekitou
政和 鷁頭
Kazuo Kuroki
一男 黒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP18722196A priority Critical patent/JP3656779B2/en
Publication of JPH09312973A publication Critical patent/JPH09312973A/en
Application granted granted Critical
Publication of JP3656779B2 publication Critical patent/JP3656779B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Dc-Dc Converters (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent the drop of conversion efficiency by making the capacitor of a snubber circuit clamp it at turn off of the first semiconductor switch element, and turning on the second switch element at turn on of the first semiconductor switch element, and discharging the energy that the snubber circuit has absorbed to load. SOLUTION: When a semiconductor switch element 2A is turned off, a snubber circuit 13 absorbs the energy accumulated in the leakage inductance and the wiring inductance of a transformer 4 through a diode 3B. Next, when semiconductor switch elements 2A and 2B are turned on, the charge accumulated in the snubber circuit 13 is discharged by the course of the snubber circuit 13 → the semiconductor switch element 2B → a transformer reset winding 42 → a DC power source 1, and the energy absorbed with the snubber circuit 13 is discharged. In short, the diode 3B performs the role of a snubber diode, and the semiconductor switch element 2b works for power regeneration.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】この発明は、直流電源から絶
縁された直流電力を取り出す直流−直流変換装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a DC / DC converter for extracting DC power insulated from a DC power supply.

【０００２】[0002]

【従来の技術】図２４に１石フォワード型直流−直流変
換装置の従来例を示す。同図に示すように、直流電源１
の正極側端子には変圧器４の一次巻線４１とリセット巻
線４２との接続点が、変圧器４の一次巻線４１の他方の
端子と直流電源１の負極側端子間には半導体スイッチ素
子２Ａが、変圧器４のリセット巻線４２の他方の端子と
直流電源１の負極側端子間にはダイオード３Ａが、変圧
器４の二次巻線４３には整流回路５が、整流回路５には
平滑フィルタ（平滑回路）６がそれぞれ接続されて構成
されている。2. Description of the Related Art FIG. 24 shows a conventional example of a one-stone forward type DC-DC converter. As shown in FIG.
Is connected to the primary winding 41 and the reset winding 42 of the transformer 4, and a semiconductor switch is provided between the other terminal of the primary winding 41 of the transformer 4 and the negative terminal of the DC power supply 1. The element 2A has a diode 3A between the other terminal of the reset winding 42 of the transformer 4 and the negative terminal of the DC power supply 1, the rectifying circuit 5 in the secondary winding 43 of the transformer 4, and the rectifying circuit 5 Are connected to smoothing filters (smoothing circuits) 6.

【０００３】図２５に図２４の動作波形を示す（図２４
のような回路とその動作は、例えば１９８４年誠文堂新
光社発行「スイッチングレギュレータの設計方法とパワ
ーデバイスの使いかた」１８〜１９頁，９５〜９９頁の
記載等により良く知られている）。いま、半導体スイッ
チ素子２Ａがオンの期間に変圧器４を正方向に励磁
し、整流回路５および平滑フィルタ６を介して負荷に直
流電力を供給する。これに対し、半導体スイッチ素子２
Ａがオフの期間には変圧器４の励磁エネルギーが、リ
セット巻線４２およびダイオード３Ａを介して直流電源
１に回生される。FIG. 25 shows operation waveforms of FIG. 24 (see FIG. 24).
Such a circuit and its operation are well known, for example, as described on pages 18 to 19 and 95 to 99 of "Method of designing switching regulator and usage of power device" issued by Seibundou Shinkosha in 1984. ). Now, while the semiconductor switch element 2A is on, the transformer 4 is excited in the positive direction, and DC power is supplied to the load via the rectifier circuit 5 and the smoothing filter 6. On the other hand, the semiconductor switch element 2
The excitation energy of the transformer 4 is regenerated to the DC power supply 1 through the reset winding 42 and the diode 3A while A is off.

【０００４】図２４の回路では、半導体スイッチ素子２
Ａのターンオフ時、半導体スイッチ素子２Ａのはね上が
り電圧を抑制するとともに、電圧上昇率（ｄｖ／ｄｔ）
を小さくしてスイッチング損失を低減するため、半導体
スイッチ素子２Ａに対しダイオード７１とコンデンサ７
２とを直列接続し、ダイオード７１に並列に放電抵抗７
３を接続したスナバ回路７を並列に接続している。これ
により、コンデンサ７２が吸収したエネルギーは、次に
半導体スイッチ素子２Ａがオンしている期間に、放電抵
抗７３へ放出される。In the circuit of FIG. 24, the semiconductor switching device 2
When A is turned off, the jumping voltage of the semiconductor switch element 2A is suppressed and the voltage rising rate (dv / dt)
To reduce the switching loss by reducing the diode 71 and the capacitor 7 to the semiconductor switch element 2A.
2 is connected in series with the diode 71 in parallel with the discharge resistor 7
The snubber circuit 7 to which 3 is connected is connected in parallel. As a result, the energy absorbed by the capacitor 72 is released to the discharge resistor 73 while the semiconductor switch element 2A is next turned on.

【０００５】[0005]

【発明が解決しようとする課題】図２４の回路において
は、スナバコンデンサが吸収したエネルギーは、次に半
導体スイッチ素子がオンしたとき、放電抵抗へ放出され
損失となる。いま、放電抵抗の損失をＰ、スナバコンデ
ンサの静電容量をＣ、直流電源の電圧をＥ、変圧器のリ
セット電圧をＶｒ、半導体スイッチ素子のはね上がり電
圧をΔＶ、半導体スイッチ素子の動作周波数をｆとする
と、 Ｐ＝（１／２）×Ｃ×（Ｅ＋Ｖｒ＋ΔＶ）2 ×ｆ となる。したがって、直流電源の電圧Ｅ、変圧器のリセ
ット電圧Ｖｒおよび半導体スイッチ素子の動作周波数ｆ
が高くなると、放電抵抗における発生損失が大きくなる
ため、大形で高価なスナバ回路が必要となるだけでな
く、装置の変換効率が低下するという問題がある。した
がって、この発明の課題はスナバ回路を大形化せず、装
置の変換効率を低下させないようにすることにある。In the circuit of FIG. 24, the energy absorbed by the snubber capacitor is released to the discharge resistor when the semiconductor switch element is turned on next, resulting in a loss. Now, the loss of the discharge resistance is P, the capacitance of the snubber capacitor is C, the voltage of the DC power source is E, the reset voltage of the transformer is Vr, the rising voltage of the semiconductor switch element is ΔV, and the operating frequency of the semiconductor switch element is f. Then, P = (1/2) × C × (E + Vr + ΔV) 2 × f. Therefore, the voltage E of the DC power supply, the reset voltage Vr of the transformer, and the operating frequency f of the semiconductor switch element
The higher the value becomes, the more the generated loss in the discharge resistance becomes, so that not only a large and expensive snubber circuit is required, but also the conversion efficiency of the device decreases. Therefore, an object of the present invention is to prevent the snubber circuit from being enlarged and the conversion efficiency of the device from being reduced.

【０００６】[0006]

【課題を解決するための手段】このような課題を解決す
べく、請求項１の発明では直流電源と、一次側にリセッ
ト巻線を持つ変圧器と、この変圧器の二次側に接続され
る整流回路と、その整流出力を平滑化する平滑回路とか
らなり、直流電源から絶縁された直流電力を取り出す直
流−直流変換装置において、第１のダイオードの一方の
端子と第１の半導体スイッチ素子の一方の端子とを直列
接続した第１の直列アームと、第２の半導体スイッチ素
子の一方の端子と第２のダイオードの一方の端子とを直
列接続した第２の直列アームと、第１のスナバ回路とを
それぞれ並列に接続するとともに、前記変圧器一次巻線
のリセット巻線を接続していない側の端子を前記第１の
直列アームの接続点に、また、前記変圧器リセット巻線
の一次巻線を接続していない側の端子を前記第２の直列
アームの接続点に、さらには、前記直流電源を変圧器の
一次巻線とリセット巻線の接続点と前記第１の半導体ス
イッチ素子と前記第２のダイオードの接続点との間に並
列に、それぞれ接続する。In order to solve such a problem, in the invention of claim 1, a DC power source, a transformer having a reset winding on the primary side, and a secondary side of the transformer are connected. A rectifying circuit and a smoothing circuit for smoothing the rectified output, and in a DC-DC converter for extracting DC power insulated from a DC power supply, one terminal of a first diode and a first semiconductor switch element. A first series arm in which one of the terminals is connected in series, a second series arm in which one terminal of the second semiconductor switch element and one terminal of the second diode are connected in series, and a first series arm A snubber circuit is connected in parallel with each other, a terminal of the transformer primary winding on the side not connected to the reset winding is connected to a connection point of the first series arm, and a transformer reset winding Connect primary winding The terminal on the side not connected is the connection point of the second series arm, and the DC power supply is the connection point of the primary winding and the reset winding of the transformer, the first semiconductor switch element and the second semiconductor switch element. Connected in parallel with the connection point of the diode.

【０００７】請求項１の発明の如くすることにより、第
１の半導体スイッチ素子のターンオフ時、第１のスナバ
回路を構成するコンデンサは（Ｅ＋Ｖｒ）にクランプさ
れるため、第１のスナバ回路が吸収するエネルギーＰ１
は、 Ｐ１＝（１／２）×Ｃ×ΔＶ2 ×ｆ と、小さくなる。また、第１の半導体スイッチ素子がオ
ンしている期間に第２のスイッチ素子をオンさせること
により、第１のスナバ回路が吸収したエネルギーＰ１を
負荷に放出することができる。According to the invention of claim 1, when the first semiconductor switch element is turned off, the capacitor constituting the first snubber circuit is clamped to (E + Vr), so that the first snubber circuit is absorbed. Energy P1
Becomes smaller as P1 = (1/2) × C × ΔV 2 × f. Further, by turning on the second switch element while the first semiconductor switch element is on, the energy P1 absorbed by the first snubber circuit can be released to the load.

【０００８】請求項２の発明では、請求項１の発明に対
し、スナバダイオードとスナバコンデンサとを直列接続
した第２のスナバ回路を前記第１の半導体スイッチ素子
と並列に、また、補助ダイオードと補助リアクトルとの
直列回路に補助コンデンサを直列接続した補助回路を前
記スナバダイオードと並列に、さらに、回生用ダイオー
ドを前記直列回路と前記補助コンデンサとの接続点と前
記第２の半導体スイッチ素子の並列接続点との間にそれ
ぞれ接続して構成する。According to a second aspect of the present invention, in addition to the first aspect of the invention, a second snubber circuit in which a snubber diode and a snubber capacitor are connected in series is provided in parallel with the first semiconductor switching element, and an auxiliary diode is provided. An auxiliary circuit in which an auxiliary capacitor is connected in series to a series circuit with an auxiliary reactor is connected in parallel with the snubber diode, and a regeneration diode is connected in parallel between the connection point between the series circuit and the auxiliary capacitor and the second semiconductor switch element. It is configured by connecting each to the connection point.

【０００９】請求項２の発明の如くすることにより、第
１の半導体スイッチ素子のターンオフ時、スナバコンデ
ンサによって第１の半導体スイッチ素子の電圧上昇率を
抑制し、スイッチング損失を低減する。次に、第１の半
導体スイッチ素子がオンの期間に、スナバコンデンサに
蓄えられている電荷を補助回路で吸収し、補助コンデン
サに移す。さらに、第１の半導体スイッチ素子がオフし
ている期間に、補助コンデンサに蓄えられている電荷
を、回生ダイオードを介して第１のスナバ回路に移す。
そして、第１の半導体スイッチ素子がオンしている期間
は、第２の半導体スイッチ素子をオンすることで、第１
のスナバ回路に吸収したエネルギーを負荷に放出する。According to the second aspect of the present invention, when the first semiconductor switching element is turned off, the snubber capacitor suppresses the voltage increase rate of the first semiconductor switching element and reduces the switching loss. Next, while the first semiconductor switch element is on, the charge stored in the snubber capacitor is absorbed by the auxiliary circuit and transferred to the auxiliary capacitor. Further, while the first semiconductor switch element is off, the electric charge stored in the auxiliary capacitor is transferred to the first snubber circuit via the regenerative diode.
Then, while the first semiconductor switch element is on, the first semiconductor switch element is turned on to turn on the first semiconductor switch element.
The energy absorbed in the snubber circuit of is released to the load.

【００１０】請求項３の発明では、請求項１または２の
発明で、第２の半導体スイッチ素子のオン期間を、第１
のスナバ回路を構成するコンデンサの静電容量と変圧器
の漏れインダクタンスとで決まる共振周波数のほぼ１／
２とする。これにより、第２の半導体スイッチ素子に
は、第１のスナバ回路を構成するコンデンサの静電容量
と変圧器の漏れインダクタンスとで決まる周期の正弦波
状の電流が流れるが、そのオン期間を共振周期の約１／
２とし、ターンオフ時の０Ａ付近で電流を遮断すること
により、スイッチング損失を低減する。According to a third aspect of the invention, in the first or second aspect of the invention, the ON period of the second semiconductor switch element is set to the first period.
Of the resonance frequency determined by the capacitance of the capacitor and the leakage inductance of the transformer that make up the snubber circuit of
Let it be 2. As a result, a sinusoidal current having a cycle determined by the capacitance of the capacitor and the leakage inductance of the transformer that form the first snubber circuit flows through the second semiconductor switching element, but the ON period is the resonance cycle. About 1 /
2, the switching loss is reduced by cutting off the current near 0 A at turn-off.

【００１１】請求項４の発明では、第１のダイオードと
第１の半導体スイッチ素子とを直列接続した第１の直列
アームと、第２の半導体スイッチ素子と第２のダイオー
ドとを直列接続した第２の直列アームと、直流電源とを
互いに並列に接続し、変圧器一次巻線を前記第１の直列
アームの直列接続点と、前記第２の直列アームの直列接
続点との間に接続するとともに、変圧器の二次巻線には
整流回路、この整流回路には平滑回路をそれぞれ接続し
てなる直流−直流変換装置において、前記第１の半導体
スイッチ素子と第２の半導体スイッチ素子のそれぞれ
に、スナバダイオードとスナバコンデンサとを直列接続
したスナバ回路をそれぞれ並列に、また、前記スナバダ
イオードのそれぞれには補助ダイオードと補助リアクト
ルとを直列接続した直列回路に補助コンデンサを直列接
続した補助回路を並列に、さらに回生ダイオードを前記
直列回路と前記補助コンデンサとの接続点と、前記第
１，第２の直列アームの並列接続点との間にそれぞれ接
続して構成する。According to a fourth aspect of the invention, there is provided a first series arm having a first diode and a first semiconductor switch element connected in series, and a second series switch having a second semiconductor switch element and a second diode connected in series. Two series arms and a DC power source are connected in parallel with each other, and a transformer primary winding is connected between the series connection point of the first series arm and the series connection point of the second series arm. In addition, in a DC-DC converter in which a rectifier circuit is connected to the secondary winding of the transformer and a smoothing circuit is connected to the rectifier circuit, the first semiconductor switch element and the second semiconductor switch element are respectively , A snubber circuit in which a snubber diode and a snubber capacitor are connected in series, respectively, and an auxiliary diode and an auxiliary reactor are connected in series to each of the snubber diodes. An auxiliary circuit in which an auxiliary capacitor is connected in series to the column circuit is connected in parallel, and a regenerative diode is further provided between the connection point of the series circuit and the auxiliary capacitor and the parallel connection point of the first and second series arms. Connect and configure.

【００１２】請求項５の発明では、半導体スイッチ素子
とダイオードとを逆並列接続した２組のスイッチング素
子を直列接続した第１の直列アームと、コンデンサを直
列接続した第２の直列アームと、直流電源とを互いに並
列に接続し、変圧器一次巻線を前記第１の直列アームの
直列接続点と、前記第２の直列アームの直列接続点との
間に接続するとともに、変圧器の二次巻線には整流回
路、この整流回路には平滑回路をそれぞれ接続してなる
直流−直流変換装置において、前記スイッチング素子の
それぞれには、スナバダイオードとスナバコンデンサと
を直列接続したスナバ回路を並列に、また、前記スナバ
ダイオードのそれぞれには、補助ダイオードと補助リア
クトルとを直列接続した直列回路に補助コンデンサを直
列接続した補助回路を並列に、さらに回生ダイオードを
前記直列回路と前記補助コンデンサとの接続点と、前記
第１，第２の直列アームの並列接続点との間にそれぞれ
接続して構成する。According to the invention of claim 5, a first series arm in which two sets of switching elements in which a semiconductor switch element and a diode are connected in anti-parallel are connected in series, a second series arm in which a capacitor is connected in series, and a direct current A power supply is connected in parallel with each other, a transformer primary winding is connected between a series connection point of the first series arm and a series connection point of the second series arm, and a secondary winding of the transformer is connected. In a DC-DC converter in which a winding has a rectifying circuit and a smoothing circuit is connected to the rectifying circuit, a snubber circuit in which a snubber diode and a snubber capacitor are connected in series is provided in parallel with each of the switching elements. , An auxiliary circuit in which an auxiliary capacitor is connected in series to a series circuit in which an auxiliary diode and an auxiliary reactor are connected in series to each of the snubber diodes. In parallel, further a regeneration diode and the series circuit and the connection point between the auxiliary capacitor, constituting respectively connected between the parallel connection point of said first, second series arm.

【００１３】請求項６の発明では、半導体スイッチ素子
とダイオードとを逆並列接続した２組のスイッチング素
子を直列接続した第１の直列アームと、コンデンサを直
列接続した第２の直列アームと、直流電源とを互いに並
列に接続し、変圧器一次巻線を前記第１の直列アームの
直列接続点と、前記第２の直列アームの直列接続点との
間に接続するとともに、変圧器の二次巻線には整流回
路、この整流回路には平滑回路をそれぞれ接続してなる
直流−直流変換装置において、前記スイッチング素子と
前記変圧器一次巻線の接続点との間に補助リアクトルを
それぞれ直列に、前記スイッチング素子のそれぞれに
は、スナバダイオードとスナバコンデンサとを直列接続
したスナバ回路を並列に、補助ダイオードと補助コンデ
ンサとを直列接続した補助回路を前記スナバ回路の直列
接続点と前記補助リアクトルと前記変圧器一次巻線の接
続点との接続点間に、回生ダイオードを前記補助回路の
直列接続点と前記第１，第２の直列アームの並列接続点
間にそれぞれ接続して構成する。In a sixth aspect of the present invention, a first series arm in which two sets of switching elements in which a semiconductor switch element and a diode are connected in anti-parallel are connected in series, a second series arm in which a capacitor is connected in series, and a direct current A power supply is connected in parallel with each other, a transformer primary winding is connected between a series connection point of the first series arm and a series connection point of the second series arm, and a secondary winding of the transformer is connected. In a DC-DC converter in which a rectifying circuit is connected to the winding and a smoothing circuit is connected to the rectifying circuit, auxiliary reactors are connected in series between the switching element and the connection point of the transformer primary winding. , A snubber circuit in which a snubber diode and a snubber capacitor are connected in series is connected in parallel to each of the switching elements, and an auxiliary diode and an auxiliary capacitor are connected in series. An auxiliary circuit is provided between the series connection point of the snubber circuit and the connection point between the auxiliary reactor and the connection point of the transformer primary winding, and a regenerative diode is provided between the series connection point of the auxiliary circuit and the first and second series. It is configured by connecting the parallel connection points of the arms.

【００１４】上記請求項４〜６の発明では、半導体スイ
ッチ素子のターンオフ時には、スナバコンデンサによっ
て上記半導体スイッチ素子の電圧上昇率を抑制し、スイ
ッチング損失を低減させる。次に、半導体スイッチ素子
がオンしている期間には、上記スナバコンデンサに蓄え
られている電荷を補助回路で吸収し、補助コンデンサに
移す。その後、半導体スイッチ素子がオフしている期間
に、この補助コンデンサに蓄えられている電荷を、回生
ダイオードを介して直流電源に回生することで、スナバ
回路での発生損失を低減させる。In the inventions of claims 4 to 6, when the semiconductor switch element is turned off, the snubber capacitor suppresses the rate of voltage rise of the semiconductor switch element and reduces the switching loss. Next, while the semiconductor switch element is on, the charge stored in the snubber capacitor is absorbed by the auxiliary circuit and transferred to the auxiliary capacitor. Thereafter, while the semiconductor switch element is off, the charge accumulated in the auxiliary capacitor is regenerated to the DC power source through the regenerative diode, thereby reducing the loss generated in the snubber circuit.

【００１５】請求項７の発明では、第１のダイオードの
一方の端子と第１の半導体スイッチ素子の一方の端子と
を直列接続した第１の直列アームと、第２の半導体スイ
ッチ素子の一方の端子と第２のダイオードの一方の端子
とを直列接続した第２の直列アームと、第１のスナバ回
路とをそれぞれ並列に接続するとともに、中間端子を備
えた変圧器一次巻線の一方の端子を前記第１の直列アー
ムの直列接続点に、前記変圧器一次巻線の他方の端子を
前記第２の直列アームの直列接続点にそれぞれ接続し、
また、直流電源を３端子スイッチの第１の端子と前記第
１の半導体スイッチ素子と前記第２のダイオードとの並
列接続点間に、前記３端子スイッチの第２の端子を前記
変圧器の中間端子に、前記３端子スイッチの第３の端子
を前記第１のダイオードと前記第２の半導体スイッチ素
子との並列接続点間にそれぞれ接続し、さらには、入力
電圧検出回路を前記直流電源と並列に、制御回路を前記
入力電圧検出回路と前記３端子スイッチとの間に、前記
変圧器の二次端子を整流回路に、この整流回路を平滑フ
ィルタにそれぞれ接続している。According to a seventh aspect of the present invention, there is provided a first series arm in which one terminal of the first diode and one terminal of the first semiconductor switching element are connected in series, and one of the second semiconductor switching element. A second series arm in which a terminal and one terminal of a second diode are connected in series and a first snubber circuit are respectively connected in parallel, and one terminal of a transformer primary winding having an intermediate terminal To the series connection point of the first series arm, and the other terminal of the transformer primary winding to the series connection point of the second series arm,
The DC power supply is connected between the first terminal of the three-terminal switch and the parallel connection point of the first semiconductor switch element and the second diode, and the second terminal of the three-terminal switch is connected to the middle of the transformer. A third terminal of the three-terminal switch is connected to a terminal between parallel connection points of the first diode and the second semiconductor switch element, and an input voltage detection circuit is connected in parallel with the DC power supply. The control circuit is connected between the input voltage detection circuit and the three-terminal switch, the secondary terminal of the transformer is connected to a rectifying circuit, and the rectifying circuit is connected to a smoothing filter.

【００１６】請求項８の発明では、第１の半導体スイッ
チ素子の一方の端子と第２の半導体スイッチ素子の一方
の端子とを直列接続した第１の直列アームと、第３の半
導体スイッチ素子の一方の端子と第４の半導体スイッチ
素子の一方の端子とを直列接続した第２の直列アーム
と、第１のスナバ回路とをそれぞれ並列に接続するとと
もに、中間端子を備えた変圧器一次巻線の一方の端子を
前記第１の直列アームの直列接続点に、前記変圧器一次
巻線の他方の端子を前記第２の直列アームの直列接続点
にそれぞれ接続し、また、直流電源を３端子スイッチの
第１の端子と前記第１の半導体スイッチ素子と前記第３
の半導体スイッチ素子との並列接続点間に、前記３端子
スイッチの第２の端子を前記変圧器の中間端子に、前記
３端子スイッチの第３の端子を前記第２の半導体スイッ
チ素子と前記第４の半導体スイッチ素子との並列接続点
間にそれぞれ接続し、さらには、入力電圧検出回路を前
記直流電源と並列に、制御回路を前記入力電圧検出回路
と前記３端子スイッチとの間に、前記変圧器の二次端子
を整流回路に、この整流回路を平滑フィルタにそれぞれ
接続している。According to another aspect of the present invention, there is provided a first series arm in which one terminal of the first semiconductor switching element and one terminal of the second semiconductor switching element are connected in series, and the third semiconductor switching element. A second primary arm in which one terminal and one terminal of a fourth semiconductor switching element are connected in series and a first snubber circuit are connected in parallel, and a transformer primary winding having an intermediate terminal is provided. One terminal is connected to a series connection point of the first series arm, the other terminal of the transformer primary winding is connected to a series connection point of the second series arm, and a DC power supply is connected to three terminals. A first terminal of a switch, the first semiconductor switch element, and the third
The second terminal of the three-terminal switch is the intermediate terminal of the transformer, and the third terminal of the three-terminal switch is the second semiconductor switching element and the No. 4, the semiconductor switch element is connected in parallel to each other, and an input voltage detection circuit is connected in parallel with the DC power supply, and a control circuit is connected between the input voltage detection circuit and the three-terminal switch. The secondary terminal of the transformer is connected to the rectifier circuit, and this rectifier circuit is connected to the smoothing filter.

【００１７】上記請求項７の発明においては、第１のス
ナバダイオードと第１のスナバコンデンサとを直列接続
した第２のスナバ回路を前記第１の半導体スイッチ素子
と並列に、第１の補助ダイオードと第１の補助リアクト
ルとを直列接続した第１の直列回路と第１の補助コンデ
ンサとを直列接続した第１の補助回路を前記第１のスナ
バダイオードと並列に、第１の回生ダイオードを前記第
１の直列回路と第１の補助コンデンサとの接続点と前記
第１のダイオードと前記第２の半導体スイッチ素子との
並列接続点間に、第２のスナバダイオードと第２のスナ
バコンデンサとを直列接続した第３のスナバ回路を前記
第２の半導体スイッチ素子と並列に、第２の補助ダイオ
ードと第２の補助リアクトルとを直列接続した第２の直
列回路と第２の補助コンデンサとを直列接続した第２の
補助回路を前記第２のスナバダイオードと並列に、第２
の回生ダイオードを前記第２の直列回路と第２の補助コ
ンデンサとの接続点と前記第２のダイオードと前記第１
の半導体スイッチ素子との並列接続点間に、それぞれ接
続することができる（請求項９の発明）。In the invention of claim 7, a second snubber circuit in which a first snubber diode and a first snubber capacitor are connected in series is provided in parallel with the first semiconductor switch element, and a first auxiliary diode is provided. And a first auxiliary reactor connected in series with a first series circuit in which a first auxiliary capacitor and a first auxiliary capacitor are connected in series, the first auxiliary circuit is connected in parallel with the first snubber diode, and the first regenerative diode is connected to the first regenerative diode. A second snubber diode and a second snubber capacitor are provided between a connection point between the first series circuit and the first auxiliary capacitor and a parallel connection point between the first diode and the second semiconductor switch element. A second series circuit in which a third snubber circuit connected in series is connected in parallel with the second semiconductor switch element, and a second auxiliary diode and a second auxiliary reactor are connected in series and a second auxiliary circuit. A second auxiliary circuit connected in series with a capacitor in parallel with the second snubber diode, a second
A regenerative diode, a connection point between the second series circuit and a second auxiliary capacitor, the second diode and the first auxiliary circuit.
Can be connected between the parallel connection points with the semiconductor switch element of (invention of claim 9).

【００１８】上記請求項８の発明においては、第１のス
ナバダイオードと第１のスナバコンデンサとを直列接続
した第２のスナバ回路を前記第１の半導体スイッチ素子
と並列に、第１の補助ダイオードと第１の補助リアクト
ルとを直列接続した第１の直列回路と第１の補助コンデ
ンサとを直列接続した第１の補助回路を前記第１のスナ
バダイオードと並列に、第１の回生ダイオードと第１の
回生リアクトルとを直列接続した第１の回生回路を前記
第１の直列回路と前記第１の補助コンデンサとの接続点
と前記第２の半導体スイッチ素子と第４の半導体スイッ
チ素子との並列接続点間に、第２のスナバダイオードと
第２のスナバコンデンサとを直列接続した第３のスナバ
回路を前記第２の半導体スイッチ素子と並列に、第２の
補助ダイオードと第２の補助リアクトルとを直列接続し
た第２の直列回路と第２の補助コンデンサとを直列接続
した第２の補助回路を前記第２のスナバダイオードと並
列に、第２の回生ダイオードと第２の回生リアクトルと
を直列接続した第２の回生回路を前記第２の直列回路と
前記第２の補助コンデンサとの接続点と前記第１の半導
体スイッチ素子と第３の半導体スイッチ素子との並列接
続点間に、前記第２の直列アームについても上記と同じ
く、第４のスナバ回路、第５のスナバ回路、第３の補助
回路、第４の補助回路、第３の回生回路および第４の回
生回路をそれぞれ接続することができる（請求項１０の
発明）。In the above invention, the second snubber circuit in which the first snubber diode and the first snubber capacitor are connected in series is provided in parallel with the first semiconductor switch element, and the first auxiliary diode is provided. And a first auxiliary reactor connected in series, and a first auxiliary circuit in which a first auxiliary capacitor and a first auxiliary capacitor are connected in series, in parallel with the first snubber diode, and a first regenerative diode and a first auxiliary circuit. A first regenerative circuit, in which a first regenerative reactor is connected in series, is provided in parallel with a connection point between the first series circuit and the first auxiliary capacitor, the second semiconductor switch element, and the fourth semiconductor switch element. A third snubber circuit, in which a second snubber diode and a second snubber capacitor are connected in series, is provided between the connection points in parallel with the second semiconductor switch element, and a second auxiliary diode is provided. A second series circuit in which a second auxiliary reactor is connected in series and a second auxiliary circuit in which a second auxiliary capacitor is connected in series, and a second regenerative diode and a second auxiliary circuit in parallel with the second snubber diode. A second regenerative circuit in which a regenerative reactor is connected in series is connected to a connection point between the second series circuit and the second auxiliary capacitor, and a parallel connection point between the first semiconductor switching element and the third semiconductor switching element. In the meanwhile, the fourth series circuit, the fifth series circuit, the third series circuit, the fourth series circuit, the fourth series circuit, the third series circuit, the third series circuit, and the fourth series circuit are also used for the second series arm. Can be respectively connected (the invention of claim 10).

【００１９】[0019]

【発明の実施の形態】図１はこの発明の第１の実施の形
態を示す回路図である。図２４に示す従来例からスナバ
回路７を省き、ダイオード３Ｂの一方の端子を変圧器一
次巻線４１と半導体スイッチ素子２Ａとの接続点に、半
導体スイッチ素子２Ｂの一方の端子を変圧器リセット巻
線４２とダイオード３Ａとの接続点に、ダイオード３Ｂ
の他方の端子を半導体スイッチ素子２Ｂの他方の端子
に、スナバ回路１３をダイオード３Ｂと半導体スイッチ
素子２Ｂとの並列接続点と半導体スイッチ素子２Ａとダ
イオード３Ａの並列接続点との間にそれぞれ接続して構
成する。図３に図１の動作波形を示す。なお、図１の直
流出力動作は図２４の場合と同様なので、以下では相違
点のみを説明する。すなわち、半導体スイッチ素子２Ａ
がターンオフしたとき、スナバ回路１３が変圧器４の漏
れインダクタンスおよび配線インダクタンスに蓄えられ
たエネルギーを、ダイオード３Ｂを介して吸収する。次
に、半導体スイッチ素子２Ａと半導体スイッチ素子２Ｂ
が同時にオンしている期間に、スナバ回路１３に蓄え
られている電荷を、スナバ回路１３→半導体スイッチ素
子２Ｂ→変圧器リセット巻線４２→直流電源１の経路で
放電し、スナバ回路１３で吸収したエネルギーを負荷に
放出する。つまり、ダイオード３Ｂはスナバダイオード
の役目を果たし、半導体スイッチ素子２Ｂは電力回生用
として作用する。図２に図１の変形例を示す。これは、
直流電源１の正極側端子を半導体スイッチ素子２Ａとダ
イオード３Ａとの接続点に、また、直流電源１の負極側
端子を変圧器一次巻線４１と変圧器リセット巻線４２と
の接続点にそれぞれ接続した点が特徴で、機能的には図
１と全く同じなので詳細は省略する。FIG. 1 is a circuit diagram showing a first embodiment of the present invention. The snubber circuit 7 is omitted from the conventional example shown in FIG. 24, one terminal of the diode 3B is connected to the connection point between the transformer primary winding 41 and the semiconductor switching element 2A, and one terminal of the semiconductor switching element 2B is connected to the transformer reset winding. At the connection point between the line 42 and the diode 3A, the diode 3B
And the snubber circuit 13 is connected between the parallel connection point of the diode 3B and the semiconductor switch element 2B and the parallel connection point of the semiconductor switch element 2A and the diode 3A, respectively. Configure. FIG. 3 shows the operation waveforms of FIG. Since the DC output operation of FIG. 1 is the same as that of FIG. 24, only the differences will be described below. That is, the semiconductor switch element 2A
Is turned off, the snubber circuit 13 absorbs the energy stored in the leakage inductance and the wiring inductance of the transformer 4 via the diode 3B. Next, the semiconductor switch element 2A and the semiconductor switch element 2B
The charges accumulated in the snubber circuit 13 are discharged through the path of the snubber circuit 13 → the semiconductor switch element 2B → the transformer reset winding 42 → the DC power supply 1 while the snubber circuit 13 absorbs the electric charge stored in the snubber circuit 13 during the period when the The released energy is released to the load. That is, the diode 3B functions as a snubber diode, and the semiconductor switch element 2B acts as a power regeneration device. FIG. 2 shows a modification of FIG. this is,
The positive electrode side terminal of the DC power supply 1 is a connection point between the semiconductor switch element 2A and the diode 3A, and the negative electrode side terminal of the DC power supply 1 is a connection point between the transformer primary winding 41 and the transformer reset winding 42. It is characterized in that it is connected, and since it is functionally the same as that in FIG. 1, its details are omitted.

【００２０】図４はこの発明の第２の実施の形態を示す
回路図、図６はその動作説明図である。図１との相違点
は、スナバダイオード７１とスナバコンデンサ７２を直
列接続したスナバ回路７を半導体スイッチ素子２Ａと並
列に、また、補助ダイオード８１と補助リアクトル８２
を直列接続した直列回路と補助コンデンサ８３とを直列
接続した補助回路８をスナバダイオード７１と並列に、
さらに、回生ダイオード９を上記直列回路と補助コンデ
ンサ８３の接続点と、ダイオード３Ｂと半導体スイッチ
素子２Ｂとの接続点間に接続した点にある。つまり、図
１および図２に示す例では、スナバ回路１３により吸収
したエネルギーを負荷に放出するようにしているため、
スナバ回路１３では損失は殆ど発生しないが、半導体ス
イッチ素子２Ａのターンオフ時の電圧上昇率を抑制する
ことができない。図４に示すものは、この問題を解決し
得るようにするものである。FIG. 4 is a circuit diagram showing a second embodiment of the present invention, and FIG. 6 is an operation explanation diagram thereof. The difference from FIG. 1 is that a snubber circuit 7 in which a snubber diode 71 and a snubber capacitor 72 are connected in series is provided in parallel with the semiconductor switch element 2A, and an auxiliary diode 81 and an auxiliary reactor 82 are provided.
Is connected in series with the snubber diode 71.
Further, the regenerative diode 9 is connected between the connection point between the series circuit and the auxiliary capacitor 83 and the connection point between the diode 3B and the semiconductor switch element 2B. That is, in the example shown in FIGS. 1 and 2, since the energy absorbed by the snubber circuit 13 is released to the load,
Although the snubber circuit 13 causes almost no loss, it cannot suppress the rate of voltage increase when the semiconductor switch element 2A is turned off. The one shown in FIG. 4 is intended to solve this problem.

【００２１】図６を参照して、半導体スイッチ素子２Ａ
に並列接続されたスナバコンデンサ７２の、電荷のエネ
ルギー回生動作につき説明する。いま、半導体スイッチ
素子２Ａがターンオフする時、スナバコンデンサ７２が
半導体スイッチ素子２Ａの電圧上昇率を抑制する。次
に、半導体スイッチ素子２Ａがオンしている期間，
に、スナバコンデンサ７２に蓄えられた電荷を、スナバ
コンデンサ７２→補助ダイオード８１→補助リアクトル
８２→補助コンデンサ８３→半導体スイッチ素子２Ａの
経路で、補助リアクトル８２および補助コンデンサ８３
に放電する。スナバコンデンサ７２が０Ｖまで放電する
と、補助リアクトル８２に蓄えられたエネルギーによ
り、補助リアクトル８２→補助コンデンサ８３→スナバ
ダイオード７１→補助ダイオード８１の経路で電流が流
れ、補助コンデンサ８３にエネルギーを移す。さらに、
半導体スイッチ素子２Ａがオフの期間に、補助コンデ
ンサ８３に蓄えられた電荷を、補助コンデンサ８３→回
生ダイオード９→スナバ回路１３→直流電源１→変圧器
一次巻線４１の経路でスナバ回路１３へと放出する。そ
して、半導体スイッチ素子２Ａと２Ｂが同時にオンして
いる期間に、スナバ回路１３に蓄えられている電荷
を、スナバ回路１３→半導体スイッチ素子２Ｂ→変圧器
リセット巻線４２→直流電源１の経路で放電し、スナバ
回路１３で吸収したエネルギーを負荷に放出する。図５
に図４の変形例を示す。すなわち、直流電源１の正極側
端子を半導体スイッチ２Ａとダイオード３Ａとの接続点
に、直流電源１の負極側端子を変圧器一次巻線４１と変
圧器リセット巻線４２との接続点にそれぞれ接続する他
は図４に示すものと全く同じなので、説明は省略する。Referring to FIG. 6, semiconductor switch element 2A
A charge energy regenerating operation of the snubber capacitor 72 connected in parallel with the above will be described. Now, when the semiconductor switching element 2A is turned off, the snubber capacitor 72 suppresses the voltage increase rate of the semiconductor switching element 2A. Next, while the semiconductor switch element 2A is on,
In addition, the charge stored in the snubber capacitor 72 is transferred to the auxiliary reactor 82 and the auxiliary capacitor 83 through the path of the snubber capacitor 72 → the auxiliary diode 81 → the auxiliary reactor 82 → the auxiliary capacitor 83 → the semiconductor switch element 2A.
To discharge. When the snubber capacitor 72 is discharged to 0 V, the energy stored in the auxiliary reactor 82 causes a current to flow in the route of the auxiliary reactor 82 → the auxiliary capacitor 83 → the snubber diode 71 → the auxiliary diode 81, and the energy is transferred to the auxiliary capacitor 83. further,
While the semiconductor switch element 2A is off, the charge accumulated in the auxiliary capacitor 83 is transferred to the snubber circuit 13 through the path of the auxiliary capacitor 83 → regenerative diode 9 → snubber circuit 13 → DC power supply 1 → transformer primary winding 41. discharge. Then, while the semiconductor switch elements 2A and 2B are turned on at the same time, the charge accumulated in the snubber circuit 13 is transferred through the path of the snubber circuit 13 → the semiconductor switch element 2B → the transformer reset winding 42 → the DC power source 1. It discharges and releases the energy absorbed by the snubber circuit 13 to the load. FIG.
4 shows a modification of FIG. That is, the positive terminal of the DC power supply 1 is connected to the connection point between the semiconductor switch 2A and the diode 3A, and the negative terminal of the DC power supply 1 is connected to the connection point between the transformer primary winding 41 and the transformer reset winding 42. The description is omitted because it is exactly the same as that shown in FIG.

【００２２】以上、いずれの例においても、半導体スイ
ッチ素子２Ｂのオン期間、半導体スイッチ素子２Ｂに
は、スナバ回路１３を構成するコンデンサの静電容量
と、変圧器４の漏れインダクタンスとによって決まる周
期の正弦波状の電流が流れる。そこで、半導体スイッチ
素子２Ｂのオン期間を、コンデンサの静電容量と変圧器
の漏れインダクタンスで決まる共振周期の約１／２（図
６に示す期間参照）とし、半導体スイッチ素子２Ｂの
ターンオフ時、０Ａ付近で電流を遮断する。これによ
り、半導体スイッチ素子２Ｂのターンオフ時のスイッチ
ング損失を低減することができる。In any of the above examples, during the ON period of the semiconductor switching element 2B, the semiconductor switching element 2B has a period determined by the capacitance of the capacitor forming the snubber circuit 13 and the leakage inductance of the transformer 4. A sinusoidal current flows. Therefore, the ON period of the semiconductor switching element 2B is set to about 1/2 of the resonance cycle determined by the capacitance of the capacitor and the leakage inductance of the transformer (see the period shown in FIG. 6), and when the semiconductor switching element 2B is turned off, 0A is applied. Cut off the current in the vicinity. As a result, it is possible to reduce the switching loss when the semiconductor switch element 2B is turned off.

【００２３】また、図４，図５はいずれも１石フォワー
ド型コンバータにスナバ回路，補助回路および回生ダイ
オードを付加したものであるが、２石フォワード型やハ
ーフブリッジ型のコンバータへの適用も考えられる。図
７は２石フォワード型に適用したもので、その基本回路
に対して、スナバダイオード７１とスナバコンデンサ７
２を直列接続したスナバ回路７を半導体スイッチ素子２
Ａと並列に、また、補助ダイオード８１と補助リアクト
ル８２とを直列接続した第１の直列回路に補助コンデン
サ８３を直列接続した補助回路８をスナバダイオード７
１と並列に、さらに、回生ダイオード９を上記第１の直
列回路と補助コンデンサ８３との接続点と、直流電源１
の正極側端子との間にそれぞれ接続して構成される。同
様に、スナバダイオード１０１とスナバコンデンサ１０
２を直列接続したスナバ回路１０を半導体スイッチ素子
２Ｂと並列に、また、補助ダイオード１１１と補助リア
クトル１１２とを直列接続した第２の直列回路に補助コ
ンデンサ１１３を直列接続した補助回路１１をスナバダ
イオード１０１と並列に、さらに、回生ダイオード１２
を上記第２の直列回路と補助コンデンサ１１３との接続
点と、直流電源１の負極側端子との間にそれぞれ接続し
て構成される。In each of FIGS. 4 and 5, a snubber circuit, an auxiliary circuit and a regenerative diode are added to the one-stone forward type converter, but application to a two-stone forward type or half-bridge type converter is also considered. To be FIG. 7 is applied to the two-stone forward type, and a snubber diode 71 and a snubber capacitor 7 are used for the basic circuit.
The semiconductor switching element 2 is a snubber circuit 7 in which 2 are connected in series.
The auxiliary circuit 8 in which the auxiliary capacitor 83 is connected in series to the snubber diode 7 is connected in parallel with A and the first series circuit in which the auxiliary diode 81 and the auxiliary reactor 82 are connected in series.
1 in parallel with the regenerative diode 9 at the connection point between the first series circuit and the auxiliary capacitor 83, and the DC power supply 1
Is connected to the positive electrode side terminal. Similarly, the snubber diode 101 and the snubber capacitor 10
The snubber diode 10 is a snubber diode in which a snubber circuit 10 in which two are connected in series is connected in parallel with the semiconductor switch element 2B, and an auxiliary capacitor 113 is connected in series in a second series circuit in which an auxiliary diode 111 and an auxiliary reactor 112 are connected in series. In parallel with 101, a regenerative diode 12
Are connected between the connection point between the second series circuit and the auxiliary capacitor 113 and the negative terminal of the DC power supply 1, respectively.

【００２４】図１０に図７の動作波形を示す。ここで
は、半導体スイッチ素子２Ａに付属するスナバコンデン
サ７２の電荷エネルギーの回生動作について説明する。
半導体スイッチ素子２Ａがターンオフするとき、スナバ
コンデンサ７２が半導体スイッチ素子２Ａの電圧上昇率
を抑制する。次に、半導体スイッチ素子２Ａがオンして
いる期間に、スナバコンデンサ７２に蓄えられている
電荷をスナバコンデンサ７２→補助ダイオード８１→補
助リアクトル８２→補助コンデンサ８３→半導体スイッ
チ素子２Ａの経路で、補助リアクトル８２および補助コ
ンデンサ８３に放電する。スナバコンデンサ７２が０Ｖ
まで放電すると期間に移行し、補助リアクトル８２に
蓄えられたエネルギーにより、補助リアクトル８２→補
助コンデンサ８３→スナバダイオード７１→補助ダイオ
ード８１の経路で電流が流れ、補助コンデンサ８３にエ
ネルギーを移す。次に、半導体スイッチ素子２Ａがオフ
の期間に、補助コンデンサ８３に蓄えられている電荷
は、補助コンデンサ８３→回生ダイオード９→直流電源
１→回生ダイオード１２→補助コンデンサ１１→変圧器
一次巻線４１の経路で放電し、直流電源１にエネルギー
を回生する。半導体スイッチ素子２Ｂに付属するスナバ
回路１０，補助回路１１および回生ダイオード１２につ
いても、上記と同様に動作する。FIG. 10 shows the operation waveforms of FIG. Here, a charge energy regenerating operation of the snubber capacitor 72 attached to the semiconductor switch element 2A will be described.
When the semiconductor switch element 2A is turned off, the snubber capacitor 72 suppresses the rate of voltage increase of the semiconductor switch element 2A. Next, while the semiconductor switch element 2A is turned on, the charge accumulated in the snubber capacitor 72 is supplemented by the snubber capacitor 72 → auxiliary diode 81 → auxiliary reactor 82 → auxiliary capacitor 83 → semiconductor switch element 2A. The reactor 82 and the auxiliary capacitor 83 are discharged. Snubber capacitor 72 is 0V
When it is discharged up to the period, the period shifts, and the energy stored in the auxiliary reactor 82 causes a current to flow in the route of the auxiliary reactor 82 → the auxiliary capacitor 83 → the snubber diode 71 → the auxiliary diode 81, and the energy is transferred to the auxiliary capacitor 83. Next, while the semiconductor switch element 2A is off, the charge accumulated in the auxiliary capacitor 83 is stored in the auxiliary capacitor 83 → regenerative diode 9 → DC power supply 1 → regenerative diode 12 → auxiliary capacitor 11 → transformer primary winding 41. To discharge energy to the DC power supply 1 and regenerate energy. The snubber circuit 10, the auxiliary circuit 11, and the regenerative diode 12 attached to the semiconductor switch element 2B also operate in the same manner as above.

【００２５】図８はハーフブリッジ型に適用したもの
で、その基本回路に対して、スナバダイオード７１とス
ナバコンデンサ７２とを直列接続したスナバ回路７を半
導体スイッチ素子２Ａと並列に、また、補助ダイオード
８１と補助リアクトル８２とを直列接続した第１の直列
回路に、補助コンデンサ８３を直列接続した補助回路８
をスナバダイオード７１と並列に、さらに、回生ダイオ
ード９を上記第１の直列回路と補助コンデンサ８３との
接続点と、直流電源１の正極側端子との間にそれぞれ接
続して構成されている。同様に、スナバダイオード１０
１とスナバコンデンサ１０２を直列接続したスナバ回路
１０を半導体スイッチ素子２Ｂと並列に、また、補助ダ
イオード１１１と補助リアクトル１１２とを直列接続し
た第２の直列回路に、補助コンデンサ１１３を直列接続
した補助回路１１をスナバダイオード１０１と並列に、
さらに、回生ダイオード１２を上記第２の直列回路と補
助コンデンサ１１３との接続点と、直流電源１の負極側
端子との間にそれぞれ接続して構成される。FIG. 8 is applied to a half-bridge type, in which a snubber circuit 7 in which a snubber diode 71 and a snubber capacitor 72 are connected in series to the basic circuit is connected in parallel with the semiconductor switch element 2A and an auxiliary diode. Auxiliary circuit 8 in which an auxiliary capacitor 83 is connected in series to a first series circuit in which 81 and an auxiliary reactor 82 are connected in series.
In parallel with the snubber diode 71, and the regenerative diode 9 is connected between the connection point between the first series circuit and the auxiliary capacitor 83 and the positive terminal of the DC power supply 1. Similarly, the snubber diode 10
1 and the snubber capacitor 102 are connected in series to the snubber circuit 10 in parallel with the semiconductor switch element 2B, and the auxiliary diode 111 and the auxiliary reactor 112 are connected in series to the second series circuit. The circuit 11 in parallel with the snubber diode 101,
Further, the regenerative diode 12 is connected between the connection point between the second series circuit and the auxiliary capacitor 113 and the negative terminal of the DC power supply 1, respectively.

【００２６】図１１に図８の動作波形を示す。ここで
は、半導体スイッチ素子２Ａに付属するスナバコンデン
サ７２の電荷エネルギーの回生動作について説明する。
半導体スイッチ素子２Ａがターンオフするとき、スナバ
コンデンサ７２が半導体スイッチ素子２Ａの電圧上昇率
を抑制する。次に、半導体スイッチ素子２Ａがオンして
いる期間に、スナバコンデンサ７２に蓄えられている
電荷をスナバコンデンサ７２→補助ダイオード８１→補
助リアクトル８２→補助コンデンサ８３→半導体スイッ
チ素子２Ａの経路で、補助リアクトル８２および補助コ
ンデンサ８３に放電する。スナバコンデンサ７２が０Ｖ
まで放電すると期間に移行し、補助リアクトル８２に
蓄えられたエネルギーにより、補助リアクトル８２→補
助コンデンサ８３→スナバダイオード７１→補助ダイオ
ード８１の経路で電流が流れ、補助コンデンサ８３にエ
ネルギーを移す。次に、半導体スイッチ素子２Ａがオフ
の期間に、補助コンデンサ８３に蓄えられている電荷
は、補助コンデンサ８３→回生ダイオード９→直流電源
１→コンデンサ３１Ａ→変圧器一次巻線４１の経路で放
電し、コンデンサ３１Ａにエネルギーを回生する。コン
デンサ３１Ａに蓄えられた電荷は、半導体スイッチ素子
２Ｂがオンの期間〜に変圧器４を介して負荷に放出
される。半導体スイッチ素子２Ｂに付属するスナバ回路
１０，補助回路１１および回生ダイオード１２について
も、上記と同様に動作する。FIG. 11 shows the operation waveforms of FIG. Here, a charge energy regenerating operation of the snubber capacitor 72 attached to the semiconductor switch element 2A will be described.
When the semiconductor switch element 2A is turned off, the snubber capacitor 72 suppresses the rate of voltage increase of the semiconductor switch element 2A. Next, while the semiconductor switch element 2A is turned on, the charge accumulated in the snubber capacitor 72 is supplemented by the snubber capacitor 72 → auxiliary diode 81 → auxiliary reactor 82 → auxiliary capacitor 83 → semiconductor switch element 2A. The reactor 82 and the auxiliary capacitor 83 are discharged. Snubber capacitor 72 is 0V
When it is discharged up to the period, the period shifts, and the energy stored in the auxiliary reactor 82 causes a current to flow in the route of the auxiliary reactor 82 → the auxiliary capacitor 83 → the snubber diode 71 → the auxiliary diode 81, and transfers the energy to the auxiliary capacitor 83. Next, while the semiconductor switch element 2A is off, the charge accumulated in the auxiliary capacitor 83 is discharged through the path of the auxiliary capacitor 83 → regenerative diode 9 → DC power supply 1 → capacitor 31A → transformer primary winding 41. , Regenerates energy to the capacitor 31A. The electric charge stored in the capacitor 31A is discharged to the load via the transformer 4 during the period when the semiconductor switch element 2B is on. The snubber circuit 10, the auxiliary circuit 11, and the regenerative diode 12 attached to the semiconductor switch element 2B also operate in the same manner as above.

【００２７】図９に図８の変形例を示す。半導体スイッ
チ素子２Ａと変圧器一次巻線４１の接続点との間に補助
リアクトル８２を、スナバダイオード７１とスナバコン
デンサ７２とを直列接続したスナバ回路７を半導体スイ
ッチ素子２Ａと並列に、また、補助ダイオード８１と補
助コンデンサ８３とを直列接続した第３の直列回路をス
ナバダイオード７１とスナバコンデンサ７２との接続点
と、補助リアクトル８２と変圧器一次巻線４１の接続点
との間に、さらに、回生ダイオード９を上記第３の直列
回路の接続点と、直流電源１の正極側端子との間にそれ
ぞれ接続して構成される。同様に、半導体スイッチ素子
２Ｂと変圧器一次巻線４１の接続点との間に補助リアク
トル１１２を、スナバダイオード１０１とスナバコンデ
ンサ１０２とを直列接続したスナバ回路１０を半導体ス
イッチ素子２Ｂと並列に、また、補助ダイオード１１１
と補助コンデンサ１１３とを直列接続した第４の直列回
路をスナバダイオード１０１とスナバコンデンサ１０２
との接続点と、補助リアクトル１１２と変圧器一次巻線
４１の接続点との間に、さらに、回生ダイオード１２を
上記第４の直列回路の接続点と、直流電源１の負極側端
子との間にそれぞれ接続して構成される。この例は、図
８に示すものでは、例えば無負荷時などでスナバコンデ
ンサ７２に電荷が充分に蓄えられていない状態において
半導体スイッチ素子２Ｂがオンすると、スナバコンデン
サ７２を充電するため半導体スイッチ素子２Ｂに過大な
電流が流れる。この例は、かかる不都合を生じさせない
ようにするものである。FIG. 9 shows a modification of FIG. An auxiliary reactor 82 is provided between the semiconductor switch element 2A and the connection point of the transformer primary winding 41, a snubber circuit 7 in which a snubber diode 71 and a snubber capacitor 72 are connected in series is provided in parallel with the semiconductor switch element 2A, and an auxiliary A third series circuit in which the diode 81 and the auxiliary capacitor 83 are connected in series is provided between the connection point between the snubber diode 71 and the snubber capacitor 72 and the connection point between the auxiliary reactor 82 and the transformer primary winding 41. The regenerative diode 9 is connected between the connection point of the third series circuit and the positive terminal of the DC power supply 1, respectively. Similarly, the auxiliary reactor 112 is provided between the semiconductor switch element 2B and the connection point of the transformer primary winding 41, and the snubber circuit 10 in which the snubber diode 101 and the snubber capacitor 102 are connected in series is provided in parallel with the semiconductor switch element 2B. In addition, the auxiliary diode 111
The fourth series circuit in which the capacitor and the auxiliary capacitor 113 are connected in series is a snubber diode 101 and a snubber capacitor 102.
Between the connection point between the auxiliary reactor 112 and the primary winding 41 of the transformer, and the connection point of the fourth series circuit of the regenerative diode 12 and the negative terminal of the DC power supply 1. It is configured by connecting between each. In this example, as shown in FIG. 8, when the semiconductor switch element 2B is turned on in a state in which the snubber capacitor 72 does not sufficiently store electric charges, for example, when there is no load, the semiconductor switch element 2B is charged to charge the snubber capacitor 72. An excessive current flows through. This example is intended to prevent such inconvenience.

【００２８】以上では、直流電源電圧をほぼ一定として
扱っているため、電圧の異なるものには適用できなくな
るという問題が残されている。この点について、以下に
説明する。図２６に従来の２石フォワード型直流−直流
変換装置の従来例を示す。すなわち、直流電源１の正極
側端子には半導体スイッチ２Ｂの一方の端子とダイオー
ド３Ｂの一方の端子が、また、直流電源１の負極側端子
には半導体スイッチ２Ａの一方の端子とダイオード３Ａ
の一方の端子が、半導体スイッチ２Ｂの他方の端子には
変圧器４の一次巻線４１の一方の端子とダイオード３Ａ
の他方の端子が、ダイオード３Ｂの他方の端子には半導
体スイッチ２Ａの他方の端子と変圧器４の一次巻線４１
の他方の端子が、さらに、変圧器４の二次巻線４３には
整流回路５が、整流回路５には平滑フィルタ６がそれぞ
れ接続されている。図２６の動作波形を図２８に示す。
半導体スイッチ２Ａおよび２Ｂをオンしている期間に
変圧器４を正方向に励磁し、整流回路５および平滑フィ
ルタ６を介して負荷に電力を供給する。次に、半導体ス
イッチ２Ａ，２Ｂをオフしている期間に、変圧器４の
励磁エネルギーが変圧器一次巻線４１およびダイオード
３Ａ，３Ｂを介して直流電源１に回生される。In the above, since the DC power supply voltage is treated as being almost constant, there remains a problem that it cannot be applied to different voltage. This will be described below. FIG. 26 shows a conventional example of a conventional two-stone forward type DC-DC converter. That is, one terminal of the semiconductor switch 2B and one terminal of the diode 3B are connected to the positive terminal of the DC power supply 1, and one terminal of the semiconductor switch 2A and the diode 3A are connected to the negative terminal of the DC power supply 1.
One terminal of the primary switch 41 of the transformer 4 and the diode 3A are connected to the other terminal of the semiconductor switch 2B.
The other terminal of the semiconductor switch 2A and the primary winding 41 of the transformer 4 are connected to the other terminal of the diode 3B.
Further, the rectifying circuit 5 is connected to the secondary winding 43 of the transformer 4, and the smoothing filter 6 is connected to the rectifying circuit 5. The operation waveforms of FIG. 26 are shown in FIG.
While the semiconductor switches 2A and 2B are on, the transformer 4 is excited in the positive direction, and power is supplied to the load via the rectifier circuit 5 and the smoothing filter 6. Next, the excitation energy of the transformer 4 is regenerated to the DC power supply 1 via the transformer primary winding 41 and the diodes 3A and 3B while the semiconductor switches 2A and 2B are turned off.

【００２９】図２７にフルブリッジ型直流−直流変換装
置の従来例を示す。同図において、直流電源１の正極側
端子には半導体スイッチ２Ｃ，２Ｄの一方の端子が、直
流電源１の負極側端子には半導体スイッチ２Ａ，２Ｂの
一方の端子が、半導体スイッチ２Ｄの他方の端子には変
圧器４の一次巻線４１の一方の端子と半導体スイッチ２
Ｂの他方の端子が、半導体スイッチ２Ｃの他方の端子に
は半導体スイッチ２Ａの他方の端子と変圧器４の一次巻
線４１の他方の端子が、変圧器４の二次巻線４３には整
流回路５が、整流回路５には平滑フィルタ６がそれぞれ
接続されている。図２７の動作波形を図２９に示す。半
導体スイッチ２Ａ，２Ｄをオンしている期間に変圧器
４を正方向に励磁し、整流回路５および平滑フィルタ６
を介して負荷に直流電力を供給する。次に、半導体スイ
ッチ２Ｂ，２Ｃをオンしている期間に変圧器４を負方
向に励磁し、整流回路５および平滑フィルタ６を介して
負荷に直流電力を供給する。FIG. 27 shows a conventional example of a full-bridge type DC-DC converter. In the figure, one terminal of the semiconductor switches 2C and 2D is connected to the positive terminal of the DC power supply 1, one terminal of the semiconductor switches 2A and 2B is connected to the negative terminal of the DC power supply 1, and the other terminal of the semiconductor switch 2D is connected to the other terminal. The terminals include one terminal of the primary winding 41 of the transformer 4 and the semiconductor switch 2
The other terminal of B, the other terminal of the semiconductor switch 2A and the other terminal of the primary winding 41 of the transformer 4 are connected to the other terminal of the semiconductor switch 2C, and the secondary winding 43 of the transformer 4 is rectified. The circuit 5 and the smoothing filter 6 are connected to the rectifier circuit 5, respectively. The operation waveforms of FIG. 27 are shown in FIG. While the semiconductor switches 2A and 2D are on, the transformer 4 is excited in the positive direction, and the rectifier circuit 5 and the smoothing filter 6 are excited.
DC power is supplied to the load via. Next, while the semiconductor switches 2B and 2C are on, the transformer 4 is excited in the negative direction, and DC power is supplied to the load via the rectifier circuit 5 and the smoothing filter 6.

【００３０】図２６の場合、直流電源１の最大電圧をＥ
ｄ１，最小電圧をＥｄ２、電圧がＥｄ１のときの半導体
スイッチ２Ａ，２Ｂがオンしている期間をＴＳ１、電圧
がＥｄ２のときの半導体スイッチ２Ａ，２Ｂがオンして
いる期間をＴＳ２、半導体スイッチ２Ａ，２Ｂに流れる
電流をｉ、このときの半導体スイッチ２Ａ，２Ｂの電圧
降下をＶＳとすると、半導体スイッチ２Ａ，２Ｂがオン
している期間に発生する導通損失ＰＯＮは、 ＰＯＮ＝２×（ＶＳ×ｉ×ＴＯＮ） となる。また、出力電圧が一定の場合はＴＳ１＜ＴＳ２
となり、直流電源電圧がＥｄ２のときは半導体スイッチ
における導通損失が増加する。また、変圧器の巻数比を
ｎ１：ｎ２、変圧器の二次巻線４３に発生する電圧をＶ
Ｔ２とすると、 ＶＴ２＝Ｅｄ×ｎ２／ｎ１ となる。整流回路を構成するダイオードは直流電源電圧
がＥｄ１の場合においても耐圧を越えないように選定さ
れるが、耐圧の高いダイオードは発生損失が大きく高価
であるという問題がある。In the case of FIG. 26, the maximum voltage of the DC power supply 1 is E
d1, the minimum voltage is Ed2, the period when the semiconductor switches 2A and 2B are on when the voltage is Ed1, is TS1, and the period when the semiconductor switches 2A and 2B are on when the voltage is Ed2 is TS2, and the semiconductor switch 2A. , 2B is i and the voltage drop of the semiconductor switches 2A and 2B at this time is VS, the conduction loss PON generated during the period when the semiconductor switches 2A and 2B are on is PON = 2 × (VS × i × TON). When the output voltage is constant, TS1 <TS2
Therefore, when the DC power supply voltage is Ed2, the conduction loss in the semiconductor switch increases. In addition, the turns ratio of the transformer is n1: n2, and the voltage generated in the secondary winding 43 of the transformer is V
If T2, then VT2 = Ed × n2 / n1. The diodes forming the rectifier circuit are selected so as not to exceed the withstand voltage even when the DC power supply voltage is Ed1, but a diode with a high withstand voltage has a problem that the generated loss is large and the cost is high.

【００３１】直流電源を単相交流（ＡＣ）電源１００Ｖ
または２００Ｖから、ダイオード整流器により全波整流
して得る例について具体的に説明する。ＡＣ１００Ｖの
場合Ｅｄ２＝９０Ｖ、ＡＣ２００Ｖの場合Ｅｄ１＝１８
０Ｖとなる。このとき、ＴＳ２≒２×ＴＳ１となり、Ａ
Ｃ２００Ｖの場合と比較してＡＣ１００Ｖの場合の半導
体スイッチの導通損失は約２倍となる。また、変圧器の
巻数比を１：１とすると、整流器を構成するダイオード
は１８０Ｖ以上の耐圧のものを選定するようにする。こ
の点は図２７の場合も同様で、直流電源電圧が低い場合
はそれが高い場合に比べて、半導体スイッチ２Ａ，２
Ｂ，２Ｃおよび２Ｄの導通損失が増加し、また、整流回
路を構成するダイオードは直流電源電圧が最大の場合で
も耐圧を越えないように選定しなければならない。つま
り、従来の直流−直流変換装置では、直流電源電圧の変
動によって発生損失が大きくなり、整流回路を構成する
ダイオードに耐圧が大きく高価なものを要するという問
題が残されている。The DC power supply is a single-phase alternating current (AC) power supply 100V.
Alternatively, an example of full-wave rectification from 200 V by a diode rectifier will be specifically described. Ed2 = 90V for AC100V, Ed1 = 18 for AC200V
It becomes 0V. At this time, TS2≈2 × TS1 and A
The conduction loss of the semiconductor switch in the case of AC100V is about double that in the case of C200V. Further, when the turns ratio of the transformer is 1: 1, the diode composing the rectifier is selected to have a withstand voltage of 180V or higher. This point is the same as in the case of FIG. 27, and when the DC power supply voltage is low compared to when it is high, the semiconductor switches 2A, 2
The conduction loss of B, 2C, and 2D increases, and the diode forming the rectifier circuit must be selected so as not to exceed the withstand voltage even when the DC power supply voltage is maximum. That is, in the conventional DC-DC converter, the generated loss becomes large due to the fluctuation of the DC power supply voltage, and there remains a problem that the diode forming the rectifier circuit has a large withstand voltage and is expensive.

【００３２】上記のような問題を回避することが可能な
電圧適応型の直流−直流変換装置について、以下に説明
する。図１２はかかる実施の形態（第５の実施の形態）
を示す回路図である。図２６との相違点は、変圧器４の
一次巻線４１の一方の端子をダイオード３Ｂと半導体ス
イッチ２Ａとの直列接続点に、変圧器４の一次巻線４２
の一方の端子を半導体スイッチ２Ｂとダイオード３Ａと
の直列接続点に、スナバ回路１３をダイオード３Ｂと半
導体スイッチ２Ｂとの並列接続点と半導体スイッチ２Ａ
とダイオード３Ａとの並列接続点間に、直流電源１の正
極側端子をスイッチ３０の一方の端子に、直流電源１の
負極側端子を半導体スイッチ２Ａとダイオード３Ａとの
並列接続点に、スイッチ３０の第１の端子３０Ａを変圧
器４の中間端子に、スイッチ３０の第２の端子３０Ｂを
ダイオード３Ｂと半導体スイッチ２Ｂとの並列接続点
に、入力電圧検出回路４０を直流電源１と並列に、制御
回路５０を入力電圧検出回路４０とスイッチ３０との間
に、それぞれ接続して構成した点にある。A voltage adaptive DC-DC converter capable of avoiding the above problems will be described below. FIG. 12 shows such an embodiment (fifth embodiment).
FIG. The difference from FIG. 26 is that one terminal of the primary winding 41 of the transformer 4 is connected to the series connection point of the diode 3B and the semiconductor switch 2A, and the primary winding 42 of the transformer 4 is connected.
One terminal is connected in series with the semiconductor switch 2B and the diode 3A, and the snubber circuit 13 is connected in parallel with the diode 3B and the semiconductor switch 2B and the semiconductor switch 2A.
And the diode 3A in parallel, the positive terminal of the DC power supply 1 is connected to one terminal of the switch 30, the negative terminal of the DC power supply 1 is connected in parallel to the semiconductor switch 2A and the diode 3A, and the switch 30 is connected. The first terminal 30A is the intermediate terminal of the transformer 4, the second terminal 30B of the switch 30 is the parallel connection point of the diode 3B and the semiconductor switch 2B, and the input voltage detection circuit 40 is the DC power supply 1 in parallel. The control circuit 50 is connected between the input voltage detection circuit 40 and the switch 30, respectively.

【００３３】図１２の構成において、直流電源１の電圧
を入力電圧検出回路４０により検出し、検出値が所定値
以上になると制御回路５０により、スイッチ３０を端子
３０Ｂ側に接続する。この場合は図２６と同じ２石コン
バータ構成となり、図２６と同様の動作が行なわれる。
これに対し、上記検出値が所定値以下のときは、スイッ
チ３０は端子３０Ａ側に接続され、図１と同様の１石コ
ンバータ構成となる。図２０に図１２でスイッチ３０を
３０Ａ側に接続した場合の動作波形を示す。すなわち、
この回路の直流出力動作は、半導体スイッチ２Ａをオン
している期間に変圧器４を正方向に励磁し、整流回路
５および平滑回路６を介して負荷に直流電力を供給す
る。次に、半導体スイッチ２Ａをオフしている期間に
変圧器４の励磁エネルギーが、変圧器一次巻線４２およ
びダイオード３Ａを介して直流電源１に回生される。な
お、巻線４２は１石コンバータの場合はリセット巻線と
して作用し、２石コンバータの場合は一次巻線として作
用することになる。In the configuration of FIG. 12, the voltage of the DC power supply 1 is detected by the input voltage detection circuit 40, and when the detected value exceeds a predetermined value, the control circuit 50 connects the switch 30 to the terminal 30B side. In this case, the two-stone converter configuration is the same as that in FIG. 26, and the same operation as in FIG. 26 is performed.
On the other hand, when the detected value is less than or equal to the predetermined value, the switch 30 is connected to the terminal 30A side, and the one-stone converter configuration similar to that of FIG. FIG. 20 shows operation waveforms when the switch 30 is connected to the 30A side in FIG. That is,
The DC output operation of this circuit excites the transformer 4 in the positive direction while the semiconductor switch 2A is on, and supplies DC power to the load via the rectifier circuit 5 and the smoothing circuit 6. Next, the excitation energy of the transformer 4 is regenerated to the DC power supply 1 via the transformer primary winding 42 and the diode 3A while the semiconductor switch 2A is off. The winding 42 acts as a reset winding in the case of a one-stone converter, and acts as a primary winding in the case of a two-stone converter.

【００３４】ここで、第１のスナバ回路１３によるエネ
ルギー回生動作について説明する。半導体スイッチ２Ａ
がターンオフしたとき、第１のスナバ回路１３が変圧器
４の漏れインダクタンスおよび配線インダクタンスに蓄
えられたエネルギーを、ダイオード３Ｂを介して吸収す
る。次に、半導体スイッチ２Ａおよび２Ｂが同時にオン
している期間に、第１のスナバ回路１３に蓄えられて
いる電荷を、第１のスナバ回路１３→半導体スイッチ２
Ｂ→変圧器一次巻線４２→直流電源１の経路で放電し、
第１のスナバ回路１３で吸収したエネルギーを変圧器４
の二次側に放出する。図１３に図１２の変形例を示す。
図１２との相違点は、直流電源１の正極端子を半導体ス
イッチ２Ａとダイオード３Ａとの並列接続点に、直流電
源１の負極端子をスイッチ３０の一方の端子にそれぞれ
接続した点にある。ただし、その動作は図１２と全く同
様なので、説明は省略する。Here, the energy regeneration operation by the first snubber circuit 13 will be described. Semiconductor switch 2A
Is turned off, the first snubber circuit 13 absorbs the energy stored in the leakage inductance and the wiring inductance of the transformer 4 via the diode 3B. Next, while the semiconductor switches 2A and 2B are turned on at the same time, the electric charge stored in the first snubber circuit 13 is transferred to the first snubber circuit 13 → the semiconductor switch 2
B → Primary winding 42 of transformer → Discharge in the path of DC power supply 1,
The energy absorbed by the first snubber circuit 13 is transferred to the transformer 4
To the secondary side of. FIG. 13 shows a modification of FIG.
The difference from FIG. 12 is that the positive electrode terminal of the DC power supply 1 is connected to the semiconductor switch 2A and the diode 3A in parallel, and the negative electrode terminal of the DC power supply 1 is connected to one terminal of the switch 30. However, since the operation is exactly the same as that in FIG. 12, the description will be omitted.

【００３５】図１４に電圧適応型の直流−直流変換装置
の第２の実施の形態（第６の実施の形態）を示す。これ
は、図２７の従来例に対応するもので、その相違点は、
変圧器４の一次巻線４１の一方の端子を半導体スイッチ
２Ａと半導体スイッチ２Ｃとの直列接続点に、変圧器４
の一次巻線４２の一方の端子を半導体スイッチ２Ｂと半
導体スイッチ２Ｄとの直列接続点に、スナバ回路１３を
半導体スイッチ２Ｃと半導体スイッチ２Ｄとの並列接続
点と半導体スイッチ２Ａと半導体スイッチ２Ｂとの並列
接続点間に、直流電源１の正極側端子をスイッチ３０の
一方の端子に、直流電源１の負極側端子を半導体スイッ
チ２Ａと半導体スイッチ２Ｂとの並列接続点に、スイッ
チ３０の第１の端子３０Ａを変圧器４の中間端子に、ス
イッチ３０の第２の端子３０Ｂを半導体スイッチ２Ｃと
半導体スイッチ２Ｄとの並列接続点に、入力電圧検出回
路４０を直流電源１と並列に、制御回路５０を入力電圧
検出回路４０とスイッチ３０との間に、それぞれ接続し
て構成した点にある。FIG. 14 shows a second embodiment (sixth embodiment) of a voltage adaptive DC / DC converter. This corresponds to the conventional example of FIG. 27, and the difference is that
One terminal of the primary winding 41 of the transformer 4 is connected to the series connection point of the semiconductor switch 2A and the semiconductor switch 2C, and the transformer 4
One terminal of the primary winding 42 of the semiconductor switch 2B and the semiconductor switch 2D is connected in series, the snubber circuit 13 is connected in parallel between the semiconductor switch 2C and the semiconductor switch 2D, the semiconductor switch 2A and the semiconductor switch 2B. Between the parallel connection points, the positive electrode side terminal of the DC power supply 1 is connected to one terminal of the switch 30, the negative electrode side terminal of the DC power supply 1 is connected to the parallel connection point of the semiconductor switches 2A and 2B, and the first terminal of the switch 30 is connected. The terminal 30A is the intermediate terminal of the transformer 4, the second terminal 30B of the switch 30 is the parallel connection point of the semiconductor switches 2C and 2D, the input voltage detection circuit 40 is in parallel with the DC power supply 1, and the control circuit 50 Is connected between the input voltage detection circuit 40 and the switch 30, respectively.

【００３６】図１４の回路も、直流電源１の電圧を入力
電圧検出回路４０により検出し、検出値が所定値以上に
なると制御回路５０により、スイッチ３０を端子３０Ｂ
側に接続する。この場合は図２７と同じフルブリッジ構
成となり、図２７と同様の動作が行なわれる。これに対
し、上記検出値が所定値以下のときは、スイッチ３０は
端子３０Ａ側に接続され、プッシュプル構成となる。図
２１に図１４でスイッチ３０を３０Ａ側に接続した場合
の動作波形を示す。すなわち、この回路の直流出力動作
は、半導体スイッチ２Ａをオンしている期間に変圧器
４を正方向に励磁し、整流回路５および平滑回路６を介
して負荷に直流電力を供給する。次に、半導体スイッチ
２Ｂをオンしている期間に変圧器４を負方向に励磁
し、整流回路５および平滑回路６を介して負荷に直流電
力を供給する。In the circuit of FIG. 14 as well, the voltage of the DC power supply 1 is detected by the input voltage detection circuit 40, and when the detected value exceeds a predetermined value, the control circuit 50 causes the switch 30 to switch to the terminal 30B.
To the side. In this case, the same full bridge configuration as in FIG. 27 is obtained, and the same operation as in FIG. 27 is performed. On the other hand, when the detected value is less than or equal to the predetermined value, the switch 30 is connected to the terminal 30A side and has a push-pull configuration. FIG. 21 shows operation waveforms when the switch 30 is connected to the 30A side in FIG. That is, in the DC output operation of this circuit, the transformer 4 is excited in the positive direction while the semiconductor switch 2A is turned on, and DC power is supplied to the load via the rectifier circuit 5 and the smoothing circuit 6. Next, while the semiconductor switch 2B is on, the transformer 4 is excited in the negative direction, and DC power is supplied to the load via the rectifier circuit 5 and the smoothing circuit 6.

【００３７】ここで、第１のスナバ回路１３によるエネ
ルギー回生動作について説明する。半導体スイッチ２Ａ
がターンオフしたとき、第１のスナバ回路１３が変圧器
４の漏れインダクタンスおよび配線インダクタンスに蓄
えられたエネルギーを、半導体スイッチ２Ｃと逆並列接
続されたダイオードを介して吸収する。次に、半導体ス
イッチ２Ａおよび２Ｄが同時にオンしている期間に、
第１のスナバ回路１３に蓄えられている電荷を、第１の
スナバ回路１３→半導体スイッチ２Ｄ→変圧器一次巻線
４２→直流電源１の経路で放電し、第１のスナバ回路１
３で吸収したエネルギーを変圧器４の二次側に放出す
る。また、半導体スイッチ２Ｂのターンオフ時、および
半導体スイッチ２Ｂと２Ｃが同時にオンしている期間に
ついても上記と同様の動作が行なわれる。図１５に図１
４の変形例を示す。図１４との相違点は、直流電源１の
正極端子を半導体スイッチ２Ａと２Ｂとの並列接続点
に、直流電源１の負極端子をスイッチ３０の一方の端子
にそれぞれ接続した点にある。ただし、その動作は図１
４と全く同様なので、説明は省略する。Here, the energy regeneration operation by the first snubber circuit 13 will be described. Semiconductor switch 2A
Is turned off, the first snubber circuit 13 absorbs the energy stored in the leakage inductance and the wiring inductance of the transformer 4 via the diode connected in anti-parallel with the semiconductor switch 2C. Next, while the semiconductor switches 2A and 2D are simultaneously turned on,
The electric charge stored in the first snubber circuit 13 is discharged through the path of the first snubber circuit 13 → the semiconductor switch 2D → the transformer primary winding 42 → the DC power source 1, and the first snubber circuit 1 is discharged.
The energy absorbed in 3 is released to the secondary side of the transformer 4. Further, the same operation as described above is performed when the semiconductor switch 2B is turned off and during the period when the semiconductor switches 2B and 2C are simultaneously turned on. FIG. 1 is shown in FIG.
4 shows a modified example. The difference from FIG. 14 is that the positive electrode terminal of the DC power supply 1 is connected in parallel to the semiconductor switches 2A and 2B, and the negative electrode terminal of the DC power supply 1 is connected to one terminal of the switch 30. However, the operation is
Since it is exactly the same as 4, the description is omitted.

【００３８】図１６は、図１２に示す半導体スイッチの
ターンオフ時の電圧上昇率を抑制し得る回路例（第７の
実施の形態）である。図１２との相違点は、スナバダイ
オード１４２とスナバコンデンサ１４１を直列接続した
第２のスナバ回路１４を半導体スイッチ素子２Ａと並列
に、また、補助ダイオード１５１と補助リアクトル１５
２を直列接続した直列回路と補助コンデンサ１５３とを
直列接続した補助回路１５をスナバダイオード１４２と
並列に、さらに、回生ダイオード１５４を上記直列回路
と補助コンデンサ１５３の接続点と、ダイオード３Ｂと
半導体スイッチ素子２Ｂとの並列接続点間にそれぞれ接
続し、加えて、半導体スイッチ素子２Ｂについても第３
のスナバ回路１６，補助回路１７および回生ダイオード
１７４を接続した点にある。FIG. 16 shows an example of a circuit (seventh embodiment) capable of suppressing the rate of voltage rise when the semiconductor switch shown in FIG. 12 is turned off. The difference from FIG. 12 is that the second snubber circuit 14 in which the snubber diode 142 and the snubber capacitor 141 are connected in series is provided in parallel with the semiconductor switch element 2A, and the auxiliary diode 151 and the auxiliary reactor 15 are provided.
An auxiliary circuit 15 in which a series circuit in which 2 is connected in series and an auxiliary capacitor 153 are connected in series is arranged in parallel with the snubber diode 142, and a regenerative diode 154 is connected to the connection point between the series circuit and the auxiliary capacitor 153, the diode 3B and a semiconductor switch. The semiconductor switching device 2B is connected to the parallel connection point with the device 2B, respectively, and in addition,
The snubber circuit 16, the auxiliary circuit 17, and the regenerative diode 174 are connected.

【００３９】図２２に図１６のスイッチ３０を端子３０
Ａ側に接続した場合の動作波形を示す。その直流出力動
作については図１２と同様なので、ここでは半導体スイ
ッチ素子２Ａに付属するスナバコンデンサ１４１のエネ
ルギー回生動作について説明する。半導体スイッチ素子
２Ａがターンオフしたとき、スナバコンデンサ１４１が
半導体スイッチ素子２Ａの電圧上昇率を抑制する。次
に、半導体スイッチ素子２Ａがオンしている期間〜
にスナバコンデンサ１４１に蓄えられている電荷を、ス
ナバコンデンサ１４１→補助ダイオード１５１→補助リ
アクトル１５２→補助コンデンサ１５３→半導体スイッ
チ素子２Ａの経路で補助リアクトル１５２および補助コ
ンデンサ１５３に放電する。スナバコンデンサ１４１が
０Ｖまで放電すると、補助リアクトル１５２に蓄えられ
たエネルギーにより、補助リアクトル１５２→補助コン
デンサ１５３→スナバダイオード１４２→補助ダイオー
ド１５１の経路で電流が流れ、補助コンデンサ１５３に
エネルギーを移す。さらに、半導体スイッチ素子２Ａが
オフの期間に、補助コンデンサ１５３に蓄えられた電
荷は、補助コンデンサ１５３→回生ダイオード１５４→
第１のスナバ回路１３→回生ダイオード１７４→補助コ
ンデンサ１７３→変圧器一次巻線４２→変圧器一次巻線
４１の経路で第１のスナバ回路１３に放出する。そし
て、半導体スイッチ素子２Ａと２Ｂが同時にオンしてい
る期間からに、第１のスナバ回路１３に蓄えられて
いる電荷を、第１のスナバ回路１３→半導体スイッチ素
子２Ｂ→変圧器一次巻線４２→直流電源１の経路で放電
し、第１のスナバ回路１３で吸収したエネルギーを負荷
に放出する。なお、以上のような動作は、半導体スイッ
チ素子２Ｂに付属するスナバコンデンサ１６１のエネル
ギー回生動作についても同様である。図１７に図１６の
変形例を示す。図１６との相違点は、直流電源１の正極
端子を半導体スイッチ素子２Ａとダイオード３Ａとの並
列接続点に、直流電源１の負極端子をスイッチ３０の一
方の端子にそれぞれ接続した点にある。ただし、その動
作は図１６と全く同様なので、説明は省略する。FIG. 22 shows the switch 30 of FIG.
The operation waveforms when connected to the A side are shown. Since the DC output operation is the same as that in FIG. 12, the energy regeneration operation of the snubber capacitor 141 attached to the semiconductor switch element 2A will be described here. When the semiconductor switch element 2A is turned off, the snubber capacitor 141 suppresses the voltage increase rate of the semiconductor switch element 2A. Next, the period during which the semiconductor switch element 2A is on
The electric charge stored in the snubber capacitor 141 is discharged to the auxiliary reactor 152 and the auxiliary capacitor 153 along the path of the snubber capacitor 141 → the auxiliary diode 151 → the auxiliary reactor 152 → the auxiliary capacitor 153 → the semiconductor switch element 2A. When the snubber capacitor 141 is discharged to 0V, the energy stored in the auxiliary reactor 152 causes a current to flow in the route of the auxiliary reactor 152 → the auxiliary capacitor 153 → the snubber diode 142 → the auxiliary diode 151, and the energy is transferred to the auxiliary capacitor 153. Furthermore, while the semiconductor switch element 2A is off, the charge stored in the auxiliary capacitor 153 is stored in the auxiliary capacitor 153 → regenerative diode 154 →
Discharge to the first snubber circuit 13 through the path of the first snubber circuit 13 → regenerative diode 174 → auxiliary capacitor 173 → transformer primary winding 42 → transformer primary winding 41. Then, from the period when the semiconductor switching elements 2A and 2B are simultaneously turned on, the electric charge accumulated in the first snubber circuit 13 is transferred to the first snubber circuit 13 → the semiconductor switching element 2B → the transformer primary winding 42. → Discharges in the path of the DC power supply 1 and releases the energy absorbed by the first snubber circuit 13 to the load. The above operation is the same as the energy regenerating operation of the snubber capacitor 161 attached to the semiconductor switch element 2B. FIG. 17 shows a modification of FIG. The difference from FIG. 16 is that the positive electrode terminal of the DC power supply 1 is connected to the semiconductor switching element 2A and the diode 3A in parallel, and the negative electrode terminal of the DC power supply 1 is connected to one terminal of the switch 30. However, since the operation is exactly the same as that in FIG. 16, the description is omitted.

【００４０】図１８は、図１４で半導体スイッチのター
ンオフ時の電圧上昇率を抑制する回路例（この発明の第
８の実施の形態）である。図１４との相違点は、スナバ
ダイオード１４２とスナバコンデンサ１４１を直列接続
した第２のスナバ回路１４を半導体スイッチ素子２Ａと
並列に、また、補助ダイオード１５１と補助リアクトル
１５２を直列接続した直列回路と補助コンデンサ１５３
とを直列接続した補助回路１５をスナバダイオード１４
２と並列に、さらに、回生ダイオード１８２と回生リア
クトル１８１とを直列接続した回生回路１８を上記直列
回路と補助コンデンサ１５３との直列接続点と半導体ス
イッチ２Ｃと２Ｄとの並列接続点間に、半導体スイッチ
２Ｂについては、スナバ回路１９，補助回路２０および
回生回路２１を、半導体スイッチ２Ｃについては、スナ
バ回路２２，補助回路２３および回生回路２４を、ま
た、半導体スイッチ２Ｄについては、スナバ回路２５，
補助回路２６および回生回路２７を、上記と同様にそれ
ぞれ接続した点にある。FIG. 18 shows an example of a circuit (the eighth embodiment of the present invention) for suppressing the rate of voltage rise at the time of turning off the semiconductor switch in FIG. The difference from FIG. 14 is that a second snubber circuit 14 in which a snubber diode 142 and a snubber capacitor 141 are connected in series is arranged in parallel with the semiconductor switch element 2A, and an auxiliary diode 151 and an auxiliary reactor 152 are connected in series. Auxiliary capacitor 153
The auxiliary circuit 15 in which is connected in series is a snubber diode 14
2 and a regenerative circuit 18 in which a regenerative diode 182 and a regenerative reactor 181 are connected in series, between the series connection point of the series circuit and the auxiliary capacitor 153 and the parallel connection point of the semiconductor switches 2C and 2D. For the switch 2B, the snubber circuit 19, the auxiliary circuit 20, and the regenerative circuit 21, for the semiconductor switch 2C, the snubber circuit 22, the auxiliary circuit 23, and the regenerative circuit 24, and for the semiconductor switch 2D, the snubber circuit 25,
The auxiliary circuit 26 and the regenerative circuit 27 are connected to each other as described above.

【００４１】図２３に図１８のスイッチ３０を端子３０
Ａ側に接続した場合の動作波形を示す。その直流出力動
作については図１４と同様なので、ここでは半導体スイ
ッチ素子２Ａに付属するスナバコンデンサ１４１のエネ
ルギー回生動作について説明する。半導体スイッチ素子
２Ａがターンオフしたとき、スナバコンデンサ１４１が
半導体スイッチ素子２Ａの電圧上昇率を抑制する。次
に、半導体スイッチ素子２Ａがオンしている期間，
にスナバコンデンサ１４１に蓄えられている電荷を、ス
ナバコンデンサ１４１→補助ダイオード１５１→補助リ
アクトル１５２→補助コンデンサ１５３→半導体スイッ
チ素子２Ａの経路で補助リアクトル１５２および補助コ
ンデンサ１５３に放電する。スナバコンデンサ１４１が
０Ｖまで放電すると、補助リアクトル１５２に蓄えられ
たエネルギーにより、補助リアクトル１５２→補助コン
デンサ１５３→スナバダイオード１４２→補助ダイオー
ド１５１の経路で電流が流れ、補助コンデンサ１５３に
エネルギーを移す。さらに、半導体スイッチ素子２Ｂと
２Ｃがオンしている期間からに、補助コンデンサ１
５３に蓄えられた電荷は、補助コンデンサ１５３→回生
リアクトル１８１→回生ダイオード１８２→半導体スイ
ッチ素子２Ｃの経路で回生リアクトル１８１に放出す
る。そして、半導体スイッチ素子２Ｃがオフしている期
間に、回生リアクトル１８１に蓄えられているエネル
ギーは、回生リアクトル１８１→回生ダイオード１８２
→第１のスナバ回路１３→回生ダイオード２７２→回生
リアクトル２７１→補助コンデンサ２６３→変圧器一次
巻線４２→変圧器一次巻線４１→補助コンデンサ１５３
の経路で電流を流し、第１のスナバ回路１３にエネルギ
ーを放出する。最後に、半導体スイッチ素子２Ａと２Ｄ
が同時にオンしている期間からに、第１のスナバ回
路１３に蓄えられている電荷を、第１のスナバ回路１３
→半導体スイッチ素子２Ｄ→変圧器一次巻線４２→直流
電源１の経路で放電し、第１のスナバ回路１３で吸収し
たエネルギーを負荷に放出する。なお、以上のような動
作は、半導体スイッチ素子２Ｂに付属するスナバコンデ
ンサ１９１、半導体スイッチ素子２Ｃに付属するスナバ
コンデンサ２２１、および半導体スイッチ素子２Ｄに付
属するスナバコンデンサ２５１の各エネルギー回生動作
についても同様である。図１９に図１８の変形例を示
す。図１８との相違点は、直流電源１の正極側端子を半
導体スイッチ素子２Ａと半導体スイッチ素子２Ｂとの並
列接続点に、直流電源１の負極側端子をスイッチ３０の
一方の端子にそれぞれ接続した点にある。ただし、その
動作は図１８と全く同様なので、説明は省略する。In FIG. 23, the switch 30 of FIG.
The operation waveforms when connected to the A side are shown. Since the DC output operation is the same as that in FIG. 14, the energy regeneration operation of the snubber capacitor 141 attached to the semiconductor switch element 2A will be described here. When the semiconductor switch element 2A is turned off, the snubber capacitor 141 suppresses the voltage increase rate of the semiconductor switch element 2A. Next, while the semiconductor switch element 2A is on,
The electric charge stored in the snubber capacitor 141 is discharged to the auxiliary reactor 152 and the auxiliary capacitor 153 along the path of the snubber capacitor 141 → the auxiliary diode 151 → the auxiliary reactor 152 → the auxiliary capacitor 153 → the semiconductor switch element 2A. When the snubber capacitor 141 is discharged to 0V, the energy stored in the auxiliary reactor 152 causes a current to flow in the route of the auxiliary reactor 152 → the auxiliary capacitor 153 → the snubber diode 142 → the auxiliary diode 151, and the energy is transferred to the auxiliary capacitor 153. Furthermore, from the period when the semiconductor switch elements 2B and 2C are on, the auxiliary capacitor 1
The electric charge stored in 53 is discharged to the regenerative reactor 181 through the route of the auxiliary capacitor 153 → regenerative reactor 181 → regenerative diode 182 → semiconductor switch element 2C. Then, while the semiconductor switch element 2C is off, the energy stored in the regenerative reactor 181 is regenerative reactor 181 → regenerative diode 182.
→ First snubber circuit 13 → Regenerative diode 272 → Regenerative reactor 271 → Auxiliary capacitor 263 → Transformer primary winding 42 → Transformer primary winding 41 → Auxiliary capacitor 153
An electric current is caused to flow through the path to release energy to the first snubber circuit 13. Finally, semiconductor switch elements 2A and 2D
The charges accumulated in the first snubber circuit 13 are transferred from the period when the first snubber circuits 13 are simultaneously turned on.
→ Semiconductor switch element 2D → Transformer primary winding 42 → Discharges in the path of the DC power supply 1 and releases the energy absorbed by the first snubber circuit 13 to the load. The above operation is the same for each energy regenerating operation of the snubber capacitor 191 attached to the semiconductor switching element 2B, the snubber capacitor 221 attached to the semiconductor switching element 2C, and the snubber capacitor 251 attached to the semiconductor switching element 2D. Is. FIG. 19 shows a modification of FIG. The difference from FIG. 18 is that the positive electrode side terminal of the DC power supply 1 is connected to the parallel connection point of the semiconductor switch element 2A and the semiconductor switching element 2B, and the negative electrode side terminal of the DC power supply 1 is connected to one terminal of the switch 30. In point. However, since the operation is exactly the same as that in FIG. 18, the description will be omitted.

【００４２】[0042]

【発明の効果】請求項１〜３の発明によれば、スナバ回
路に蓄えられたエネルギーを直流電源に回生するかまた
は負荷に放出するようにしたので、スナバ回路では損失
が殆ど発生しないようになる。また、請求項４〜６の発
明によれば、半導体スイッチ素子のターンオフ時の電圧
上昇率を低減できるので、スイッチング損失および発熱
が低減するという利点が得られる。その結果、装置の変
換効率が向上し、放熱のための冷却装置を小形にできる
という利点がもたらされる。また、請求項７，８の発明
によれば、直流電源の電圧が一定値以下の場合は１石フ
ォワードコンバータまたはプッシュプル型コンバータと
して動作し、変圧器の巻線比が（ｎ１１＋ｎ１２）：ｎ
２からｎ１１：ｎ２に変わるため、直流電源電圧が低い
場合でも半導体スイッチ素子がオンしている期間の変化
があまりないことにより、導通損失が低減する。また、
直流電源電圧が一定値以上の場合、変圧器二次巻線に発
生する電圧は、Ｅｄ×ｎ２／（ｎ１１＋ｎ１２）となる
ため、整流回路を構成するダイオードは、従来のものに
比べて耐圧の低いものを選定することができ、安価とな
る。さらに、請求項９，１０の発明のように、請求項
７，８の発明に対してスナバ回路，補助回路および回生
回路を付加することにより、スナバ回路では損失が殆ど
発生しなくなるだけでなく、半導体スイッチ素子のター
ンオフ時に発生するスイッチング損失および発熱が低減
するという利点も得られる。その結果、装置の変換効率
が向上し、放熱のための冷却装置を小形化することがで
きる。According to the inventions of claims 1 to 3, the energy stored in the snubber circuit is regenerated to the DC power source or discharged to the load, so that the snubber circuit causes almost no loss. Become. Further, according to the inventions of claims 4 to 6, the rate of voltage rise at the time of turning off the semiconductor switch element can be reduced, so that there is an advantage in that switching loss and heat generation are reduced. As a result, there is an advantage that the conversion efficiency of the device is improved and a cooling device for heat radiation can be downsized. Further, according to the inventions of claims 7 and 8, when the voltage of the DC power supply is below a certain value, it operates as a one-stone forward converter or a push-pull converter, and the winding ratio of the transformer is (n11 + n12): n.
Since it changes from 2 to n11: n2, there is little change in the period during which the semiconductor switch element is on even when the DC power supply voltage is low, and conduction loss is reduced. Also,
When the DC power supply voltage is equal to or higher than a certain value, the voltage generated in the secondary winding of the transformer is Ed × n2 / (n11 + n12), so that the diode composing the rectifier circuit has a lower withstand voltage than the conventional one. It is possible to select one and it is cheap. Furthermore, as in the inventions of claims 9 and 10, by adding a snubber circuit, an auxiliary circuit and a regenerative circuit to the inventions of claims 7 and 8, not only is the snubber circuit almost free of loss, There is also an advantage that the switching loss and heat generation that occur when the semiconductor switch element is turned off are reduced. As a result, the conversion efficiency of the device is improved, and the cooling device for heat dissipation can be downsized.

【図面の簡単な説明】[Brief description of drawings]

【図１】この発明による第１の実施の形態を示す回路図
である。FIG. 1 is a circuit diagram showing a first embodiment according to the present invention.

【図２】図１の変形例を示す回路図である。FIG. 2 is a circuit diagram showing a modified example of FIG.

【図３】図１，図２の動作説明図である。FIG. 3 is an operation explanatory diagram of FIGS. 1 and 2;

【図４】この発明による第２の実施の形態を示す回路図
である。FIG. 4 is a circuit diagram showing a second embodiment according to the present invention.

【図５】図４の変形例を示す回路図である。FIG. 5 is a circuit diagram showing a modified example of FIG.

【図６】図４，図５の動作説明図である。FIG. 6 is an operation explanatory diagram of FIGS. 4 and 5;

【図７】この発明による第３の実施の形態を示す回路図
である。FIG. 7 is a circuit diagram showing a third embodiment according to the present invention.

【図８】この発明による第４の実施の形態を示す回路図
である。FIG. 8 is a circuit diagram showing a fourth embodiment according to the present invention.

【図９】図８の変形例を示す回路図である。9 is a circuit diagram showing a modified example of FIG.

【図１０】図７の動作説明図である。10 is an explanatory diagram of the operation of FIG.

【図１１】図８，図９の動作説明図である。FIG. 11 is an operation explanatory diagram of FIGS. 8 and 9;

【図１２】この発明による第５の実施の形態を示す回路
図である。FIG. 12 is a circuit diagram showing a fifth embodiment according to the present invention.

【図１３】図１２の変形例を示す回路図である。FIG. 13 is a circuit diagram showing a modified example of FIG.

【図１４】この発明による第６の実施の形態を示す回路
図である。FIG. 14 is a circuit diagram showing a sixth embodiment according to the present invention.

【図１５】図１４の変形例を示す回路図である。FIG. 15 is a circuit diagram showing a modified example of FIG.

【図１６】この発明による第７の実施の形態を示す回路
図である。FIG. 16 is a circuit diagram showing a seventh embodiment according to the present invention.

【図１７】図１６の変形例を示す回路図である。FIG. 17 is a circuit diagram showing a modified example of FIG.

【図１８】この発明による第８の実施の形態を示す回路
図である。FIG. 18 is a circuit diagram showing an eighth embodiment according to the present invention.

【図１９】図１８の変形例を示す回路図である。FIG. 19 is a circuit diagram showing a modified example of FIG.

【図２０】図１２，１３の動作説明図である。FIG. 20 is an operation explanatory diagram of FIGS. 12 and 13;

【図２１】図１４，１５の動作説明図である。FIG. 21 is an operation explanatory diagram of FIGS. 14 and 15;

【図２２】図１６，１７の動作説明図である。22 is an explanatory diagram of the operation of FIGS.

【図２３】図１８，１９の動作説明図である。FIG. 23 is an operation explanatory diagram of FIGS.

【図２４】第１の従来例を示す回路図である。FIG. 24 is a circuit diagram showing a first conventional example.

【図２５】図２４の動作説明図である。25 is an explanatory diagram of the operation of FIG. 24.

【図２６】第２の従来例を示す回路図である。FIG. 26 is a circuit diagram showing a second conventional example.

【図２７】第３の従来例を示す回路図である。FIG. 27 is a circuit diagram showing a third conventional example.

【図２８】図２６の動作説明図である。28 is an explanatory diagram of the operation of FIG. 26.

【図２９】図２７の動作説明図である。29 is an explanatory diagram of the operation of FIG. 27. FIG.

【符号の説明】[Explanation of symbols]

１…直流電源、２Ａ，２Ｂ，２Ｃ，２Ｄ…半導体スイッ
チ素子、３Ａ，３Ｂ…ダイオード、４…変圧器、５…整
流回路、６…平滑回路（平滑フィルタ）、７，１０，１
３，１４，１６，１９，２２，２５…スナバ回路、８，
１１，１５，１７，２０，２３，２６…補助回路、９，
１２，１５４，１７４，１８２，２１２，２４２，２７
２…回生ダイオード、１８，２１，２４，２７…回生回
路、３０…スイッチ、３０Ａ，３０Ｂ…スイッチ３０の
端子、３１Ａ，３２Ａ…コンデンサ、４０…入力電圧検
出回路、４１…変圧器一次巻線、４２…変圧器リセット
巻線、４３…変圧器二次巻線、５０…制御回路、７１，
１０１，１４２，１６２，１９２，２２２，２５２…ス
ナバダイオード、７２，１０２，１４１，１６１，１９
１，２２１，２５１…スナバコンデンサ、７３…放電抵
抗、８１，１１１，１５１，１７１，２０１，２３１，
２６１…補助ダイオード、８２，１１２，１５２，１７
２，２０２，２３２，２６２…補助リアクトル、１１
３，１５３，１７３，２０３，２３３，２６３…補助コ
ンデンサ、１８１，２１１，２４１，２７１…回生リア
クトル。DESCRIPTION OF SYMBOLS 1 ... DC power supply, 2A, 2B, 2C, 2D ... Semiconductor switch element, 3A, 3B ... Diode, 4 ... Transformer, 5 ... Rectifier circuit, 6 ... Smoothing circuit (smoothing filter), 7, 10, 1
3, 14, 16, 19, 22, 25 ... Snubber circuit, 8,
11, 15, 17, 20, 23, 26 ... Auxiliary circuit, 9,
12,154,174,182,212,242,27
2 ... Regenerative diode, 18, 21, 24, 27 ... Regenerative circuit, 30 ... Switch, 30A, 30B ... Switch 30 terminal, 31A, 32A ... Capacitor, 40 ... Input voltage detection circuit, 41 ... Transformer primary winding, 42 ... Transformer reset winding, 43 ... Transformer secondary winding, 50 ... Control circuit, 71,
101, 142, 162, 192, 222, 252 ... Snubber diode, 72, 102, 141, 161, 19
1, 211, 251 ... Snubber capacitors, 73 ... Discharge resistors, 81, 111, 151, 171, 201, 231,
261 ... Auxiliary diode, 82, 112, 152, 17
2,202,232,262 ... Auxiliary reactor, 11
3, 153, 173, 203, 233, 263 ... Auxiliary capacitors, 181, 211, 241, 271 ... Regenerative reactor.

Claims (10)

【特許請求の範囲】[Claims] 【請求項１】 直流電源と、一次側にリセット巻線を持
つ変圧器と、この変圧器の二次側に接続される整流回路
と、その整流出力を平滑化する平滑回路とからなり、直
流電源から絶縁された直流電力を取り出す直流−直流変
換装置において、 第１のダイオードの一方の端子と第１の半導体スイッチ
素子の一方の端子とを直列接続した第１の直列アーム
と、第２の半導体スイッチ素子の一方の端子と第２のダ
イオードの一方の端子とを直列接続した第２の直列アー
ムと、第１のスナバ回路とをそれぞれ並列に接続すると
ともに、前記変圧器一次巻線のリセット巻線を接続して
いない側の端子を前記第１の直列アームの接続点に、ま
た、前記変圧器リセット巻線の一次巻線を接続していな
い側の端子を前記第２の直列アームの接続点に、さらに
は、前記直流電源を変圧器の一次巻線とリセット巻線の
接続点と前記第１の半導体スイッチ素子と前記第２のダ
イオードの接続点との間に並列に、それぞれ接続したこ
とを特徴とする直流−直流変換装置。1. A direct current power source, a transformer having a reset winding on the primary side, a rectifier circuit connected to the secondary side of the transformer, and a smoothing circuit for smoothing the rectified output thereof. In a DC-DC converter for extracting DC power isolated from a power supply, a first series arm in which one terminal of a first diode and one terminal of a first semiconductor switch element are connected in series, and a second series arm A second series arm, in which one terminal of the semiconductor switch element and one terminal of the second diode are connected in series, and a first snubber circuit are connected in parallel, and the primary winding of the transformer is reset. A terminal on the side not connected to the winding is connected to the connection point of the first series arm, and a terminal on the side not connected to the primary winding of the transformer reset winding is connected to the second series arm. At the connection point, The direct current power supply is connected in parallel between a connection point between the primary winding and the reset winding of the transformer and a connection point between the first semiconductor switch element and the second diode, respectively. -DC converter. 【請求項２】 スナバダイオードとスナバコンデンサと
を直列接続した第２のスナバ回路を前記第１の半導体ス
イッチ素子と並列に、また、補助ダイオードと補助リア
クトルとの直列回路に補助コンデンサを直列接続した補
助回路を前記スナバダイオードと並列に、さらに、回生
用ダイオードを前記直列回路と前記補助コンデンサとの
接続点と前記第２の半導体スイッチ素子の並列接続点と
の間にそれぞれ接続したことを特徴とする請求項１に記
載の直流−直流変換装置。2. A second snubber circuit in which a snubber diode and a snubber capacitor are connected in series is connected in parallel with the first semiconductor switch element, and an auxiliary capacitor is connected in series in a series circuit of an auxiliary diode and an auxiliary reactor. An auxiliary circuit is connected in parallel with the snubber diode, and a regenerative diode is connected between a connection point of the series circuit and the auxiliary capacitor and a parallel connection point of the second semiconductor switch element. The DC-DC converter according to claim 1. 【請求項３】 前記第２の半導体スイッチ素子のオン期
間を、前記第１のスナバ回路を構成するコンデンサの静
電容量と前記変圧器の漏れインダクタンスとで決まる共
振周期のほぼ１／２とすることを特徴とする請求項１ま
たは２のいずれかに記載の直流−直流変換装置。3. The ON period of the second semiconductor switching element is set to be approximately 1/2 of the resonance period determined by the capacitance of the capacitor forming the first snubber circuit and the leakage inductance of the transformer. The DC-DC converter according to claim 1 or 2, characterized in that. 【請求項４】 第１のダイオードと第１の半導体スイッ
チ素子とを直列接続した第１の直列アームと、第２の半
導体スイッチ素子と第２のダイオードとを直列接続した
第２の直列アームと、直流電源とを互いに並列に接続
し、変圧器一次巻線を前記第１の直列アームの直列接続
点と、前記第２の直列アームの直列接続点との間に接続
するとともに、変圧器の二次巻線には整流回路、この整
流回路には平滑回路をそれぞれ接続してなる直流−直流
変換装置において、 前記第１の半導体スイッチ素子と第２の半導体スイッチ
素子のそれぞれに、スナバダイオードとスナバコンデン
サとを直列接続したスナバ回路をそれぞれ並列に、ま
た、前記スナバダイオードのそれぞれには補助ダイオー
ドと補助リアクトルとを直列接続した直列回路に補助コ
ンデンサを直列接続した補助回路を並列に、さらに回生
ダイオードを前記直列回路と前記補助コンデンサとの接
続点と、前記第１，第２の直列アームの並列接続点との
間にそれぞれ接続したことを特徴とする直流−直流変換
装置。4. A first series arm in which a first diode and a first semiconductor switch element are connected in series, and a second series arm in which a second semiconductor switch element and a second diode are connected in series. , A DC power source are connected in parallel with each other, and a transformer primary winding is connected between a series connection point of the first series arm and a series connection point of the second series arm, and A DC-DC converter in which a rectifying circuit is connected to the secondary winding and a smoothing circuit is connected to the rectifying circuit, wherein a snubber diode is provided in each of the first semiconductor switching element and the second semiconductor switching element. A snubber circuit in which a snubber capacitor is connected in series is connected in parallel, and each of the snubber diodes is connected in series with an auxiliary diode and an auxiliary reactor in an auxiliary capacitor. An auxiliary circuit in which the sensors are connected in series is connected in parallel, and a regenerative diode is connected between the connection point of the series circuit and the auxiliary capacitor and the parallel connection point of the first and second series arms. Characteristic DC-DC converter. 【請求項５】 半導体スイッチ素子とダイオードとを逆
並列接続した２組のスイッチング素子を直列接続した第
１の直列アームと、コンデンサを直列接続した第２の直
列アームと、直流電源とを互いに並列に接続し、変圧器
一次巻線を前記第１の直列アームの直列接続点と、前記
第２の直列アームの直列接続点との間に接続するととも
に、変圧器の二次巻線には整流回路、この整流回路には
平滑回路をそれぞれ接続してなる直流−直流変換装置に
おいて、 前記スイッチング素子のそれぞれには、スナバダイオー
ドとスナバコンデンサとを直列接続したスナバ回路を並
列に、また、前記スナバダイオードのそれぞれには、補
助ダイオードと補助リアクトルとを直列接続した直列回
路に補助コンデンサを直列接続した補助回路を並列に、
さらに回生ダイオードを前記直列回路と前記補助コンデ
ンサとの接続点と、前記第１，第２の直列アームの並列
接続点との間にそれぞれ接続したことを特徴とする直流
−直流変換装置。5. A first series arm in which two sets of switching elements in which a semiconductor switch element and a diode are connected in anti-parallel are connected in series, a second series arm in which a capacitor is connected in series, and a DC power supply are parallel to each other. The transformer primary winding is connected between the series connection point of the first series arm and the series connection point of the second series arm, and the secondary winding of the transformer is rectified. A circuit, a DC-DC converter in which smoothing circuits are connected to the rectifier circuit, wherein each of the switching elements includes a snubber circuit in which a snubber diode and a snubber capacitor are connected in series, and the snubber circuit is connected in parallel. In each of the diodes, in parallel, an auxiliary circuit in which an auxiliary capacitor is connected in series to a series circuit in which an auxiliary diode and an auxiliary reactor are connected in series,
Further, the regenerative diode is connected between a connection point of the series circuit and the auxiliary capacitor and a parallel connection point of the first and second series arms, respectively. 【請求項６】 半導体スイッチ素子とダイオードとを逆
並列接続した２組のスイッチング素子を直列接続した第
１の直列アームと、コンデンサを直列接続した第２の直
列アームと、直流電源とを互いに並列に接続し、変圧器
一次巻線を前記第１の直列アームの直列接続点と、前記
第２の直列アームの直列接続点との間に接続するととも
に、変圧器の二次巻線には整流回路、この整流回路には
平滑回路をそれぞれ接続してなる直流−直流変換装置に
おいて、 前記スイッチング素子と前記変圧器一次巻線の接続点と
の間に補助リアクトルをそれぞれ直列に、前記スイッチ
ング素子のそれぞれには、スナバダイオードとスナバコ
ンデンサとを直列接続したスナバ回路を並列に、補助ダ
イオードと補助コンデンサとを直列接続した補助回路を
前記スナバ回路の直列接続点と前記補助リアクトルと前
記変圧器一次巻線の接続点との接続点間に、回生ダイオ
ードを前記補助回路の直列接続点と前記第１，第２の直
列アームの並列接続点間にそれぞれ接続したことを特徴
とする直流−直流変換装置。6. A first series arm in which two sets of switching elements in which a semiconductor switch element and a diode are connected in antiparallel are connected in series, a second series arm in which a capacitor is connected in series, and a DC power source are parallel to each other. The transformer primary winding is connected between the series connection point of the first series arm and the series connection point of the second series arm, and the secondary winding of the transformer is rectified. Circuit, a DC-DC converter in which smoothing circuits are connected to the rectifier circuit, respectively, in which auxiliary reactors are respectively connected in series between the switching element and the connection point of the transformer primary winding, Each of them has a snubber circuit in which a snubber diode and a snubber capacitor are connected in series, and an auxiliary circuit in which an auxiliary diode and an auxiliary capacitor are connected in series. A regenerative diode is provided between the series connection point of the circuit and the connection point of the auxiliary reactor and the connection point of the transformer primary winding, and the series connection point of the auxiliary circuit and the parallel connection point of the first and second series arms. A DC-DC converter characterized by being connected to each other. 【請求項７】 第１のダイオードの一方の端子と第１の
半導体スイッチ素子の一方の端子とを直列接続した第１
の直列アームと、第２の半導体スイッチ素子の一方の端
子と第２のダイオードの一方の端子とを直列接続した第
２の直列アームと、第１のスナバ回路とをそれぞれ並列
に接続するとともに、中間端子を備えた変圧器一次巻線
の一方の端子を前記第１の直列アームの直列接続点に、
前記変圧器一次巻線の他方の端子を前記第２の直列アー
ムの直列接続点にそれぞれ接続し、また、直流電源を３
端子スイッチの第１の端子と前記第１の半導体スイッチ
素子と前記第２のダイオードとの並列接続点間に、前記
３端子スイッチの第２の端子を前記変圧器の中間端子
に、前記３端子スイッチの第３の端子を前記第１のダイ
オードと前記第２の半導体スイッチ素子との並列接続点
間にそれぞれ接続し、さらには、入力電圧検出回路を前
記直流電源と並列に、制御回路を前記入力電圧検出回路
と前記３端子スイッチとの間に、前記変圧器の二次端子
を整流回路に、この整流回路を平滑フィルタにそれぞれ
接続したことを特徴とする直流−直流変換装置。7. A first circuit in which one terminal of a first diode and one terminal of a first semiconductor switching element are connected in series.
And a second series arm in which one terminal of the second semiconductor switch element and one terminal of the second diode are connected in series, and the first snubber circuit is connected in parallel. One terminal of the transformer primary winding with an intermediate terminal at the series connection point of the first series arm,
The other terminal of the transformer primary winding is connected to the series connection point of the second series arm, and a DC power supply is
Between the parallel connection point of the first terminal of the terminal switch, the first semiconductor switch element and the second diode, the second terminal of the three-terminal switch to the intermediate terminal of the transformer, the three terminals A third terminal of the switch is connected between parallel connection points of the first diode and the second semiconductor switch element, and further, an input voltage detection circuit is connected in parallel with the DC power supply, and a control circuit is connected to the control circuit. A DC-DC converter, wherein a secondary terminal of the transformer is connected to a rectifier circuit and the rectifier circuit is connected to a smoothing filter between an input voltage detection circuit and the three-terminal switch. 【請求項８】 第１の半導体スイッチ素子の一方の端子
と第２の半導体スイッチ素子の一方の端子とを直列接続
した第１の直列アームと、第３の半導体スイッチ素子の
一方の端子と第４の半導体スイッチ素子の一方の端子と
を直列接続した第２の直列アームと、第１のスナバ回路
とをそれぞれ並列に接続するとともに、中間端子を備え
た変圧器一次巻線の一方の端子を前記第１の直列アーム
の直列接続点に、前記変圧器一次巻線の他方の端子を前
記第２の直列アームの直列接続点にそれぞれ接続し、ま
た、直流電源を３端子スイッチの第１の端子と前記第１
の半導体スイッチ素子と前記第３の半導体スイッチ素子
との並列接続点間に、前記３端子スイッチの第２の端子
を前記変圧器の中間端子に、前記３端子スイッチ７第３
の端子を前記第２の半導体スイッチ素子と前記第４の半
導体スイッチ素子との並列接続点間にそれぞれ接続し、
さらには、入力電圧検出回路を前記直流電源と並列に、
制御回路を前記入力電圧検出回路と前記３端子スイッチ
との間に、前記変圧器の二次端子を整流回路に、この整
流回路を平滑フィルタにそれぞれ接続したことを特徴と
する直流−直流変換装置。8. A first series arm in which one terminal of a first semiconductor switching element and one terminal of a second semiconductor switching element are connected in series, one terminal of a third semiconductor switching element and a first series arm. The second series arm in which one terminal of the semiconductor switch element of 4 is connected in series and the first snubber circuit are respectively connected in parallel, and one terminal of the transformer primary winding having an intermediate terminal is connected to the second series arm. The other terminal of the transformer primary winding is connected to the series connection point of the first series arm, and the DC power source is connected to the first connection point of the three-terminal switch. Terminal and the first
The second terminal of the three-terminal switch as the intermediate terminal of the transformer, and the three-terminal switch 7
The terminals of the second semiconductor switch element and the fourth semiconductor switch element are respectively connected in parallel,
Furthermore, an input voltage detection circuit in parallel with the DC power supply,
A DC-DC converter, wherein a control circuit is connected between the input voltage detection circuit and the three-terminal switch, the secondary terminal of the transformer is connected to a rectifying circuit, and the rectifying circuit is connected to a smoothing filter. . 【請求項９】 第１のスナバダイオードと第１のスナバ
コンデンサとを直列接続した第２のスナバ回路を前記第
１の半導体スイッチ素子と並列に、第１の補助ダイオー
ドと第１の補助リアクトルとを直列接続した第１の直列
回路と第１の補助コンデンサとを直列接続した第１の補
助回路を前記第１のスナバダイオードと並列に、第１の
回生ダイオードを前記第１の直列回路と第１の補助コン
デンサとの接続点と前記第１のダイオードと前記第２の
半導体スイッチ素子との並列接続点間に、第２のスナバ
ダイオードと第２のスナバコンデンサとを直列接続した
第３のスナバ回路を前記第２の半導体スイッチ素子と並
列に、第２の補助ダイオードと第２の補助リアクトルと
を直列接続した第２の直列回路と第２の補助コンデンサ
とを直列接続した第２の補助回路を前記第２のスナバダ
イオードと並列に、第２の回生ダイオードを前記第２の
直列回路と第２の補助コンデンサとの接続点と前記第２
のダイオードと前記第１の半導体スイッチ素子との並列
接続点間に、それぞれ接続したことを特徴とする請求項
７に記載の直流−直流変換装置。9. A second snubber circuit, in which a first snubber diode and a first snubber capacitor are connected in series, is provided in parallel with the first semiconductor switch element, and a first auxiliary diode and a first auxiliary reactor are provided. Is connected in series with a first auxiliary circuit in which a first series circuit including a first auxiliary circuit and a first auxiliary capacitor connected in series is connected in parallel to the first snubber diode, and a first regenerative diode is connected to the first series circuit in the first series circuit. A third snubber in which a second snubber diode and a second snubber capacitor are connected in series between a connection point with the first auxiliary capacitor and a parallel connection point between the first diode and the second semiconductor switch element. A second series circuit in which a second auxiliary diode and a second auxiliary reactor are connected in series and a second auxiliary capacitor are connected in series, and a circuit is connected in parallel with the second semiconductor switching element. The second auxiliary circuit is connected in parallel with the second snubber diode, and the second regenerative diode is connected to the connection point between the second series circuit and the second auxiliary capacitor and the second auxiliary circuit.
8. The DC-DC converter according to claim 7, wherein the diode and the first semiconductor switch element are connected in parallel to each other. 【請求項１０】 第１のスナバダイオードと第１のスナ
バコンデンサとを直列接続した第２のスナバ回路を前記
第１の半導体スイッチ素子と並列に、第１の補助ダイオ
ードと第１の補助リアクトルとを直列接続した第１の直
列回路と第１の補助コンデンサとを直列接続した第１の
補助回路を前記第１のスナバダイオードと並列に、第１
の回生ダイオードと第１の回生リアクトルとを直列接続
した第１の回生回路を前記第１の直列回路と前記第１の
補助コンデンサとの接続点と前記第２の半導体スイッチ
素子と第４の半導体スイッチ素子との並列接続点間に、
第２のスナバダイオードと第２のスナバコンデンサとを
直列接続した第３のスナバ回路を前記第２の半導体スイ
ッチ素子と並列に、第２の補助ダイオードと第２の補助
リアクトルとを直列接続した第２の直列回路と第２の補
助コンデンサとを直列接続した第２の補助回路を前記第
２のスナバダイオードと並列に、第２の回生ダイオード
と第２の回生リアクトルとを直列接続した第２の回生回
路を前記第２の直列回路と前記第２の補助コンデンサと
の接続点と前記第１の半導体スイッチ素子と第３の半導
体スイッチ素子との並列接続点間に、前記第２の直列ア
ームについても上記と同じく、第４のスナバ回路、第５
のスナバ回路、第３の補助回路、第４の補助回路、第３
の回生回路および第４の回生回路をそれぞれ接続したこ
とを特徴とする請求項８に記載の直流−直流変換装置。10. A second snubber circuit, in which a first snubber diode and a first snubber capacitor are connected in series, is provided in parallel with the first semiconductor switching device, and a first auxiliary diode and a first auxiliary reactor are provided. And a first auxiliary circuit in which a first auxiliary circuit in which a first auxiliary circuit and a first auxiliary capacitor are connected in series are connected in parallel with the first snubber diode.
The first regenerative circuit in which the regenerative diode and the first regenerative reactor are connected in series, the connection point between the first series circuit and the first auxiliary capacitor, the second semiconductor switch element, and the fourth semiconductor. Between the parallel connection point with the switch element,
A third snubber circuit, in which a second snubber diode and a second snubber capacitor are connected in series, is connected in parallel with the second semiconductor switch element, and a second auxiliary diode and a second auxiliary reactor are connected in series. A second auxiliary circuit in which a second series circuit and a second auxiliary capacitor are connected in series is connected in parallel with the second snubber diode, and a second regenerative diode and a second regenerative reactor are connected in series. A regenerative circuit is provided between the connection point of the second series circuit and the second auxiliary capacitor and the parallel connection point of the first semiconductor switch element and the third semiconductor switch element with respect to the second series arm. The same as above, the fourth snubber circuit, the fifth
Snubber circuit, third auxiliary circuit, fourth auxiliary circuit, third
9. The DC-DC converter according to claim 8, wherein the regenerative circuit and the fourth regenerative circuit are connected.
JP18722196A 1995-10-20 1996-07-17 DC-DC converter Expired - Fee Related JP3656779B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18722196A JP3656779B2 (en) 1995-10-20 1996-07-17 DC-DC converter

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP27217995 1995-10-20
JP8-59880 1996-03-18
JP5988096 1996-03-18
JP7-272179 1996-03-18
JP18722196A JP3656779B2 (en) 1995-10-20 1996-07-17 DC-DC converter

Publications (2)

Publication Number Publication Date
JPH09312973A true JPH09312973A (en) 1997-12-02
JP3656779B2 JP3656779B2 (en) 2005-06-08

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ID=27297028

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Application Number Title Priority Date Filing Date
JP18722196A Expired - Fee Related JP3656779B2 (en) 1995-10-20 1996-07-17 DC-DC converter

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005053140A1 (en) * 2003-11-26 2005-06-09 Sanken Electric Co., Ltd. Switching power supply apparatus
WO2005053141A1 (en) * 2003-11-26 2005-06-09 Sanken, Electric, Co., Ltd. Switching power supply apparatus
US7466565B2 (en) 2005-06-30 2008-12-16 Tdk Corporation Switching power supply unit and voltage detection circuit
US8077482B2 (en) 2006-06-01 2011-12-13 Kabushiki Kaisha Toyota Jidoshokki DC-DC converter
WO2022180811A1 (en) * 2021-02-26 2022-09-01 Tdk株式会社 Drive circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005053140A1 (en) * 2003-11-26 2005-06-09 Sanken Electric Co., Ltd. Switching power supply apparatus
WO2005053141A1 (en) * 2003-11-26 2005-06-09 Sanken, Electric, Co., Ltd. Switching power supply apparatus
US7130204B2 (en) 2003-11-26 2006-10-31 Sanken Electric Co., Ltd. Switching power source apparatus
US7298631B2 (en) 2003-11-26 2007-11-20 Sanken Electric Co., Ltd. Switching power source apparatus
US7466565B2 (en) 2005-06-30 2008-12-16 Tdk Corporation Switching power supply unit and voltage detection circuit
US8077482B2 (en) 2006-06-01 2011-12-13 Kabushiki Kaisha Toyota Jidoshokki DC-DC converter
WO2022180811A1 (en) * 2021-02-26 2022-09-01 Tdk株式会社 Drive circuit

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