JPH09298314A - Light emitting device - Google Patents

Light emitting device

Info

Publication number
JPH09298314A
JPH09298314A JP8111786A JP11178696A JPH09298314A JP H09298314 A JPH09298314 A JP H09298314A JP 8111786 A JP8111786 A JP 8111786A JP 11178696 A JP11178696 A JP 11178696A JP H09298314 A JPH09298314 A JP H09298314A
Authority
JP
Japan
Prior art keywords
light emitting
package
electrode
emitting element
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8111786A
Other languages
Japanese (ja)
Inventor
Hiroaki Tamemoto
広昭 為本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP8111786A priority Critical patent/JPH09298314A/en
Publication of JPH09298314A publication Critical patent/JPH09298314A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To enlarge a heat radiation part and improve the heat radiation, namely to suppress the temp. rise of a light emitting device by fixing a plurality of light emitting elements on electrodes in the same package through a common adhesive. SOLUTION: Electrodes 101 are inserted into a package 103 composed of a liq. crystal polymer molded item and the like, and light emitting elements 105 are fixed on the electrodes 101 through a common adhesive 102. This adhesive is pref. a good thermal-conductive one to transfer the heat from each light emitting element 105 to the identical electrode 101 and pref. a resin binder contg. a conductive member such as Ag, C, Cu, Au, Al and Pd. This allows the identical electrodes 101 with the adhered light emitting elements 105 and outer electrodes 107 to be large sized structures and hence the thermal resistance can be reduced to thereby reduce the temp. rise of the light emitting element assembly due to the increase of the heat radiation rate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本願発明は、発光素子を利用
した発光装置に関し、特に２個以上の発光素子を内包し
半導体特性が安定且つ、多色発光時の混色性に優れた発
光装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using a light emitting element, and more particularly to a light emitting device which contains two or more light emitting elements, has stable semiconductor characteristics, and is excellent in color mixing during multicolor light emission. Is.

【０００２】[0002]

【従来の技術】発光装置であるチップ部品型ＬＥＤアッ
センブリなどは、電気的及び機械的に安定化させた素子
の如く使用できるように発光素子をチップ型保護体で保
護させている。したがって、用途上より外形が小型であ
ることが要求される。この様なチップ部品型ＬＥＤアッ
センブリなどは、個々に電力を供給し複数色などの発光
を行わせるため発光素子としての各ＬＥＤチップをパッ
ケージ内の別々の電極上に固着させて構成させてある。2. Description of the Related Art In a chip part type LED assembly which is a light emitting device, a light emitting element is protected by a chip type protector so that it can be used like an element which is electrically and mechanically stabilized. Therefore, the outer shape is required to be smaller than the intended purpose. Such a chip component type LED assembly is constructed by fixing each LED chip as a light emitting element on a separate electrode in the package in order to individually supply electric power and emit light of a plurality of colors.

【０００３】しかしながら、チップ部品型ＬＥＤアッセ
ンブリを小型化させるとＬＥＤチップが放出する熱を処
理する放熱面積も比例的に小さくなる。また、複数個の
ＬＥＤチップを内包した多色発光チップ部品型ＬＥＤア
ッセンブリでは、発熱量が１個のＬＥＤチップを内包す
るものより著しく増加する。このため発光装置点灯時の
温度上昇が極めて大きく半導体発光素子の動作特性が不
安定化するあるいは、熱応力により発光装置の部分的破
壊が生ずる場合がある。ＬＥＤチップの昇温防止のため
に、発光素子の発熱を発光素子が固定されるパッケージ
電極などへ熱伝導させることが考えられる。具体的に
は、ＬＥＤチップが発光に伴って生じた熱をＬＥＤアッ
センブリが搭載された基板上のパッケージ電極及び半田
付などで固定される外部電極を介して大気中へ放熱させ
る。これによりＬＥＤアッセンブリの昇温を抑制し発光
特性を良好に維持させる。However, when the chip component type LED assembly is miniaturized, the heat radiation area for processing the heat emitted by the LED chip is also proportionally reduced. Further, in the multicolor light emitting chip component type LED assembly including a plurality of LED chips, the heat generation amount is remarkably increased as compared with the one including a single LED chip. For this reason, the temperature rise when the light emitting device is turned on is extremely large, and the operating characteristics of the semiconductor light emitting element may become unstable, or the light emitting device may be partially destroyed due to thermal stress. In order to prevent the temperature rise of the LED chip, it is considered that heat generated by the light emitting element is conducted to the package electrode or the like to which the light emitting element is fixed. Specifically, the heat generated by the LED chip emitting light is radiated into the atmosphere through the package electrode on the substrate on which the LED assembly is mounted and the external electrode fixed by soldering or the like. As a result, the temperature rise of the LED assembly is suppressed and the light emission characteristics are maintained in good condition.

【０００４】即ち、より放熱効果を高めるためには、パ
ッケージ電極及び外部電極を放熱部として有効に利用す
ることが必要であり、パッケージ電極及び外部電極の表
面積を極力大きくすることが必要となる。外部電極の表
面積増加は、各々のＬＥＤチップが配された電極などを
広くせざるを得ない。そのため電極幅が広くなった分基
板上回路レイアウトの自由度が減少し、外部回路のスペ
ース即ち基板の大きさが大型化してしまうという問題点
を有する。また、電極ごとにＬＥＤチップが配置されて
いるため発光素子間の距離間を小さくすることができず
多色点灯時の混色性が劣る。That is, in order to further enhance the heat radiation effect, it is necessary to effectively utilize the package electrode and the external electrode as the heat radiation portion, and it is necessary to maximize the surface areas of the package electrode and the external electrode. Increasing the surface area of the external electrodes inevitably increases the size of the electrodes on which the LED chips are arranged. Therefore, the degree of freedom of the circuit layout on the substrate is reduced by the increase of the electrode width, and the space of the external circuit, that is, the size of the substrate is increased. Further, since the LED chip is arranged for each electrode, it is not possible to reduce the distance between the light emitting elements and the color mixing property at the time of multicolor lighting is deteriorated.

【０００５】さらに、チップ部品型ＬＥＤアッセンブリ
を小型化させ混色性を向上させるため、ＬＥＤチップを
近づけ配置させようとするとＬＥＤチップのダイボンド
時にコレットが先にマウントされたＬＥＤチップと接触
して各ＬＥＤチップを損傷してしまう場合がある。一
方、ＬＥＤチップが互いに損傷しない程度に離してしま
うと混色性が低下するという問題が生ずる。混色性を向
上させるために接着剤上にＬＥＤチップを互いに近づけ
て配置させても接着剤の硬化段階で移動し混色性を向上
させ得ない。特に、別々の電極上に設けた接着剤上でそ
れぞれの発光素子を近づけたとしても接着剤であるペー
スト硬化中のペースト粘度が低下した時、ペーストの持
つ表面張力で平面的に見た場合チップがペースト中央へ
引き寄せられ、硬化後の各チップの間隔はどうしてもペ
ースト塗布径以上に開いてしまう。Further, in order to reduce the size of the chip part type LED assembly and improve the color mixing property, when the LED chips are arranged close to each other, the collet comes into contact with the LED chip previously mounted at the time of die bonding of the LED chips and each LED. It may damage the tip. On the other hand, if the LED chips are separated from each other to such an extent that they are not damaged, there is a problem that the color mixing property deteriorates. Even if the LED chips are arranged close to each other on the adhesive in order to improve the color mixing property, the LED chips move in the curing stage of the adhesive and the color mixing property cannot be improved. In particular, when the paste viscosity of the paste, which is the adhesive agent, decreases even when the light emitting elements are brought close to each other on the adhesive agent provided on separate electrodes, the surface tension of the paste causes the chip to be viewed planarly. Are attracted to the center of the paste, and the intervals between the chips after curing inevitably become larger than the paste application diameter.

【０００６】[0006]

【発明が解決しようとする課題】したがって、より優れ
た発光特性が求められる今日においては上記構成の発光
装置では十分ではなく、更なる特性向上が求められる。
本願発明はかかる問題に鑑み、発光特性が安定で色ずれ
がなく混色性が高い発光装置とすることである。Therefore, in the present day when more excellent light emitting characteristics are required, the light emitting device having the above structure is not sufficient, and further improvement in characteristics is required.
In view of such a problem, the present invention is to provide a light emitting device having stable emission characteristics, no color shift, and high color mixing.

【０００７】[0007]

【課題を解決するための手段】本願発明は、パッケージ
外部から内部に電力を供給するためのパッケージ電極
と、パッケージ内に内包しパッケージ電極に接続された
少なくとも２以上の発光素子と、を有する発光装置であ
って、前記発光素子がそれぞれ同一パッケージ電極上に
共通接着剤を介して固着されている発光装置である。DISCLOSURE OF THE INVENTION The invention of the present application has a package electrode for supplying electric power from the outside to the inside of the package, and at least two or more light emitting elements which are included in the package and connected to the package electrode. The device is a light emitting device in which the light emitting elements are fixed on the same package electrode via a common adhesive.

【０００８】また、前記共通接着剤が導電性ペーストで
ある発光装置であり、前記導電性ペーストがＡｇ、Ｃ、
Ｃｕ、Ａｕ、Ａｌ、Ｐｄから選択される少なくとも一つ
を含有させた樹脂バインダーである発光装置である。さ
らに、前記発光素子がＲＧＢの各発光波長ごとにそれぞ
れ３以上有し、導電性基板上に形成された半導体を有す
る発光素子と、絶縁性基板上に形成された半導体を有す
る少なくとも２以上の発光素子と、である発光装置でも
ある。The common adhesive is a light emitting device in which a conductive paste is used, and the conductive paste is Ag, C,
The light emitting device is a resin binder containing at least one selected from Cu, Au, Al and Pd. Further, the light emitting element has three or more for each emission wavelength of RGB and has a semiconductor formed on a conductive substrate, and at least two or more light emission having a semiconductor formed on an insulating substrate. The element is also a light emitting device.

【０００９】[0009]

【発明の実施の形態】本願発明者は種々の実験の結果、
複数の発光素子を同一電極上に共通接着剤により固着さ
せることによって発光特性及び混色性に優れた発光装置
とすることができることを見出しこれに基づいて本願発
明を成すに至った。BEST MODE FOR CARRYING OUT THE INVENTION The present inventor has conducted various experiments,
The present invention has been completed based on the finding that a light emitting device having excellent light emitting characteristics and color mixing can be obtained by fixing a plurality of light emitting elements on the same electrode with a common adhesive.

【００１０】即ち、同一パッケージ電極上の共通接着剤
上に形成させた発光素子は、互いに近接して配置し強固
に固定させることができると共に発光素子からの放熱を
効率よく外部に放出させることができる。同一パッケー
ジ電極上に各発光ダイオードを配置したことにより、同
一パッケージ電極と接続される配線パターンのみ放熱性
を考慮すればよく配線パターンの設計を容易にすると共
に放熱面積を大きくすることができる。さらに、各発光
素子が同一電極上に配置してあるため発光素子の温度む
らが少なく半導体特性を安定化させることができる。ま
た、共通接着剤を用いることにより発光素子の損傷なく
密集して配置できる。発光色の異なる場合は、混色性を
高めることもできる。具体的には、図５（Ａ）及び図６
（Ａ）に記載の如く接着剤上に設けた発光素子５０１、
６０１は、その硬化に伴って図５（Ｂ）及び図６（Ｂ）
の如く接着剤５０２、６０２のそれぞれの中心に移動す
る。これは、接着剤の硬化中にペースト粘度が低下し、
接着剤の表面張力により発光素子が接着剤中央部に引き
寄せられるために生ずると考えられる。図６の如き共通
接着剤上に発光素子をそれぞれ配置させるとペーストの
中央部は、一点になるため各発光素子は、ペースト硬化
時その共通の一点にペーストの表面張力により引き寄せ
られる。したがって、何れのチップをも共通の１点に引
き寄せつつペーストが硬化するので、各発光素子を損傷
させることなく硬化後の各発光素子の位置を互いに密接
し混色性の優れた発光装置とすることができる。That is, the light emitting elements formed on the common adhesive on the same package electrode can be arranged close to each other and firmly fixed, and the heat radiation from the light emitting elements can be efficiently released to the outside. it can. By arranging the light emitting diodes on the same package electrode, it is sufficient to consider the heat radiation property only for the wiring pattern connected to the same package electrode, which facilitates the design of the wiring pattern and increases the heat radiation area. Furthermore, since each light emitting element is arranged on the same electrode, the temperature unevenness of the light emitting element is small and the semiconductor characteristics can be stabilized. Further, by using the common adhesive, the light emitting elements can be arranged densely without damage. When the emission colors are different, the color mixing property can be enhanced. Specifically, FIG. 5A and FIG.
A light emitting element 501 provided on an adhesive as described in (A),
Reference numeral 601 indicates the state of FIG. 5B and FIG.
As described above, the adhesive moves to the center of each of the adhesives 502 and 602. This reduces the paste viscosity during the curing of the adhesive,
It is considered that this occurs because the light emitting element is attracted to the central portion of the adhesive due to the surface tension of the adhesive. When the light emitting elements are arranged on the common adhesive as shown in FIG. 6, the central portion of the paste becomes one point, and therefore each light emitting element is attracted to the common one point by the surface tension of the paste when the paste is cured. Therefore, since the paste is cured while pulling all the chips to one common point, the positions of the respective light emitting elements after curing are brought into close contact with each other without damaging the respective light emitting elements to provide a light emitting device having excellent color mixing. You can

【００１１】以下に本願発明について説明する。図１は
本願発明の発光素子の模式図を示し、図１（Ａ）は発光
素子を上面より見たものを示す。図１（Ｂ）は、図１
（Ａ）の模式的Ａ−Ａ断面図である。液晶ポリマー成型
品などよりなるパッケージ１０３内にパッケージ電極１
０１がインサートされている。このパッケージ電極上に
各ＬＥＤチップがそれぞれ共通接着剤として銀ペースト
などを利用して固着されている。発光素子であるＬＥＤ
チップは種々のものが利用できる。種々のＬＥＤチップ
により所望の発光色とすることができるが、フルカラー
表示させるためにはＲＧＢ（赤色、緑色、青色）の発光
色が好適に用いられる。各ＬＥＤチップは、各々同一極
性側の一方の電極より同一パッケージ電極に対して電気
的接続部材である金、アルミニウムなどの導電性ワイヤ
ーが張られ電気的に接続されているか或いは、裏面電極
として銀ペーストを介して電気的に接続されている。ま
た、各ＬＥＤチップの逆極性側の他方の電極は、パッケ
ージに設けられた他の各電極と金属ワイヤーなどの電気
的接続部材を利用して電気的導通が取られている。The present invention will be described below. FIG. 1 shows a schematic view of a light emitting element of the present invention, and FIG. 1 (A) shows a top view of the light emitting element. FIG.
It is a typical AA sectional view of (A). A package electrode 1 is provided in a package 103 made of a liquid crystal polymer molding or the like.
01 is inserted. Each LED chip is fixed on this package electrode by using silver paste or the like as a common adhesive. LED which is a light emitting element
Various types of chips can be used. Although various LED chips can achieve desired emission colors, RGB (red, green, blue) emission colors are preferably used for full-color display. Each LED chip is electrically connected from one electrode on the same polarity side to the same package electrode with a conductive wire such as gold or aluminum that is an electrical connection member, or is connected as a back electrode with silver. It is electrically connected via paste. The other electrode on the opposite polarity side of each LED chip is electrically connected to each of the other electrodes provided on the package by using an electrical connection member such as a metal wire.

【００１２】パッケージの発光素子を内包した凹部に
は、透光性のシリコーンまたはエポキシ等の樹脂にてモ
ールドし外部環境からＬＥＤチップを保護してある。ま
た、パッケージ電極は、各々パッケージの外側にて基板
上に設けられた配線パターンなどの外部電極に半田付な
どで導通を取りかつ係止される。この様な構造により同
一パッケージ電極以外の各パッケージ電極は、金属ワイ
ヤーがボンディングするなどの大きさがあればよいので
小型化され、ＬＥＤチップが固着された同一パッケージ
電極を大型化することが可能となる。さらにＬＥＤチッ
プが固着されたパッケージ電極以外と接続される外部電
極は、ＬＥＤチップに電流を供給可能な必要最小限の大
きさでよくその分パッケージと接続される外部電極を大
型化できる。ＬＥＤが固着された同一パッケージ電極か
ら外部電極を経て大気中というのが本構造での主要放熱
経路でありＬＥＤチップが固着された同一パッケージ電
極、外部電極各々を大型化できるため熱抵抗を低減でき
る。従って放熱量の増加にともなうＬＥＤアッセンブリ
の温度上昇低減がもたらされる。さらに、基板の放熱設
計上、ＬＥＤチップが固着された同一パッケージ電極と
接続される外部電極の放熱性のみ考慮すればよいのであ
るから飛躍的に設計が容易になり作製も容易になる。ま
た、１個の電極上に前ＬＥＤチップを搭載したので各発
光素子を密に配置可能となり多色発光時の混色性もよく
なる。以下本願発明の各構成について詳述する。The LED chip is protected from the external environment by molding in a recess containing the light emitting element of the package with a resin such as translucent silicone or epoxy. Further, the package electrodes are electrically connected and locked to external electrodes such as wiring patterns provided on the substrate on the outside of the package by soldering or the like. With such a structure, each package electrode other than the same package electrode needs to have a size such as a metal wire to be bonded, so that it can be downsized and the same package electrode to which the LED chip is fixed can be enlarged. Become. Further, the external electrodes connected to other than the package electrode to which the LED chip is fixed may have the minimum necessary size capable of supplying current to the LED chip, and the external electrode connected to the package can be enlarged accordingly. The main heat dissipation path in this structure is from the same package electrode to which the LED is fixed to the external electrode and to the atmosphere, and the same package electrode to which the LED chip is fixed and the external electrode can be upsized, so that the thermal resistance can be reduced. . Therefore, the temperature rise of the LED assembly is reduced with the increase of the heat radiation amount. Further, in designing the heat dissipation of the substrate, it is only necessary to consider the heat dissipation of the external electrode connected to the same package electrode to which the LED chip is fixed, so that the design is dramatically facilitated and the manufacture is facilitated. Further, since the front LED chip is mounted on one electrode, the light emitting elements can be arranged densely, and the color mixing property at the time of multicolor light emission is improved. Hereinafter, each configuration of the present invention will be described in detail.

【００１３】（パッケージ電極）パッケージ電極とは、
パッケージ１０３外部からの電力を内部に配置された発
光素子１０５に供給させるために用いられるためのもの
である。パッケージ電極は、放熱性電気伝導性、発光素
子の特性などから種々の大きさに形成させることができ
る。本願発明において同一パッケージ電極１０１とは、
各発光素子１０５が互いに近接して配置される同一電極
のことである。したがって、各発光素子と同一パッケー
ジ電極とが全て電気的に接続されていてもよくまた、そ
のうちの少なくとも一つが接続されていてもよい。同一
パッケージ電極上に各発光素子を固定させるために他の
電極は発光素子とワイヤー等で電気的に接続できる程度
の極めて小さくすることができる。また、特に、同一パ
ッケージ電極は、各発光素子を配置すると共に発光素子
から放出された熱を外部に放熱させるため熱伝導性がよ
いことが好ましい。また、パッケージ電極上に発光素子
が配置されることから発光素子が放出した光を有効利用
させるため反射率が高いことが好ましい。この様なパッ
ケージ電極としては、銅やりん青銅板表面に銀或いは金
などの貴金属メッキを施したものが好適に用いられる。
この様なパッケージ電極は電気伝導度、熱伝導度によっ
て種々利用できるが加工性の観点から板厚０．１ｍｍか
ら２ｍｍが好ましい。(Package electrode) What is a package electrode?
It is used to supply electric power from the outside of the package 103 to the light emitting element 105 arranged inside. The package electrode can be formed in various sizes depending on heat dissipation, electrical conductivity, characteristics of the light emitting device, and the like. In the present invention, the same package electrode 101 means
The light emitting elements 105 are the same electrodes arranged close to each other. Therefore, all the light emitting elements and the same package electrode may be electrically connected, or at least one of them may be electrically connected. In order to fix each light emitting element on the same package electrode, the other electrodes can be made extremely small enough to be electrically connected to the light emitting element by a wire or the like. Further, it is particularly preferable that the same package electrode has good thermal conductivity in order to dispose the heat emitted from the light emitting element to the outside while disposing each light emitting element. Further, since the light emitting element is arranged on the package electrode, the reflectance is preferably high in order to effectively use the light emitted by the light emitting element. As such a package electrode, a copper or phosphor bronze plate surface plated with a noble metal such as silver or gold is preferably used.
Various types of such package electrodes can be used depending on the electrical conductivity and thermal conductivity, but from the viewpoint of workability, the plate thickness is preferably 0.1 mm to 2 mm.

【００１４】（共通接着剤１０２、６０２）本願発明に
用いられる共通接着剤１０２は、同一パッケージ電極１
０１と各発光素子１０５とを固定するために用いられ、
固定される発光素子１０５が連結して連なっている１つ
の接着剤のことを言う。共通接着剤１０２は、発光素子
１０５からの放熱を同一パッケージ電極１０１へと伝導
させるために熱伝導性がよいことが好ましい。また、所
望に応じて導電性接着剤として同一パッケージ電極と直
接電気的に接続させることもできる。この場合、電気伝
導性がよいことも求められる。この様な共通接着剤とし
ては、導電性部材を含有させた樹脂バインダーが好まし
い。上記要件を満たす導電性部材としてＡｇ、Ｃ、Ｃ
ｕ、Ａｕ、Ａｌ、Ｐｄなどが挙げられる。樹脂バインダ
ーや共通接着剤そのものとしては、ｎ-２-メチルピロリ
ドン，アセトン等の溶媒で希釈されたエポキシ樹脂、ア
クリル樹脂やイミド樹脂などの熱硬化性樹脂が好適にあ
げれる。共通接着剤は、塗布性を向上させさせるために
流動性の大きなものを用いてもよいし、ＬＥＤチップの
大幅な移動を防ぐために流動性の小さなものを用いても
よい。いずれにしても硬化前に流動性を有し硬化後は固
定されるものが望ましい。(Common Adhesives 102, 602) The common adhesive 102 used in the present invention is the same package electrode 1
01 and each light emitting element 105 are fixed,
It means one adhesive agent in which the light emitting elements 105 to be fixed are connected and continuous. It is preferable that the common adhesive 102 has good thermal conductivity in order to conduct the heat radiation from the light emitting element 105 to the same package electrode 101. If desired, the same package electrode can be directly electrically connected as a conductive adhesive. In this case, good electrical conductivity is also required. As such a common adhesive, a resin binder containing a conductive member is preferable. Ag, C, C as a conductive member satisfying the above requirements
u, Au, Al, Pd, etc. may be mentioned. Preferable examples of the resin binder and the common adhesive itself include epoxy resins diluted with a solvent such as n-2-methylpyrrolidone and acetone, and thermosetting resins such as acrylic resin and imide resin. As the common adhesive, one having a large fluidity may be used in order to improve the coating property, or one having a small fluidity may be used in order to prevent a large movement of the LED chip. In any case, it is desirable that it has fluidity before curing and is fixed after curing.

【００１５】（パッケージ１０３）パッケージ１０３
は、発光素子１０５を凹部に固定保護するとともに外部
との電気的接続が可能な如く電極を有するものである。
すなわち、パッケージ１０３は発光素子１０５をさらに
外部環境から保護するために透光性保護体などをパッケ
ージの凹部に収容させてもよい。したがって、パッケー
ジは、透光性保護体との接着性がよく透光性保護体より
も剛性の高いものが求められる。また、透光性保護体と
の接着性を向上させ熱膨張時に透光性保護体から働く力
を外部に向かわせるために筒状部を外部に向けて広がる
摺鉢形状としても良い。さらに、可視光に分光特性を有
する発光素子を収容し利用させるためには遮光機能を持
たせるために着色していることが好ましい。また、発光
素子と外部とを電気的に遮断させるために絶縁性を有す
ることが望まれる。さらに、パッケージは、発光素子な
どからの熱の影響をうけた場合、保護体との密着性を考
慮して熱膨張率の小さい物が好ましい。パッケージの内
部表面は、エンボス加工させて接着面積を増やしたり、
プラズマ処理して保護体との密着性を向上させることも
できる。(Package 103) Package 103
Has an electrode for fixing and protecting the light emitting element 105 in the concave portion and for enabling electrical connection to the outside.
That is, in the package 103, a translucent protective body or the like may be housed in the recess of the package in order to further protect the light emitting element 105 from the external environment. Therefore, the package is required to have good adhesiveness to the translucent protective body and higher rigidity than the translucent protective body. Further, in order to improve the adhesiveness with the translucent protective body and direct the force exerted by the translucent protective body at the time of thermal expansion to the outside, the cylindrical portion may be shaped like a sloping pot that expands toward the outside. Further, in order to accommodate and use a light emitting element having a spectral characteristic for visible light, it is preferable that the light emitting element is colored to have a light shielding function. Further, it is desired to have an insulating property in order to electrically shut off the light emitting element and the outside. Further, the package is preferably a package having a small coefficient of thermal expansion in consideration of the adhesion with the protective body when it is affected by heat from the light emitting element or the like. The inner surface of the package can be embossed to increase the adhesive area,
It is also possible to perform plasma treatment to improve the adhesion to the protector.

【００１６】この様なパッケージとしてポリカーボネー
ト樹脂、ポリフェニレンサルファイド（ＰＰＳ）、液晶
ポリマー（ＬＣＰ）、ＡＢＳ樹脂、エポキシ樹脂、フェ
ノール樹脂、アクリル樹脂、ＰＢＴ樹脂等の樹脂を用い
ることができる。Resins such as polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, epoxy resin, phenol resin, acrylic resin and PBT resin can be used for such a package.

【００１７】パッケージには、あらかじめ発光素子が乗
せることができ発光素子の一方の電極と電気的に接続で
きるパッケージ電極と、発光素子の他方の電極と接続で
きる各電極と、を有している。したがって、パッケージ
は電極と一体的に形成させてもよく、パッケージが複数
に分かれはめ込みなどにより組み合わせて構成させても
よい。この様なパッケージは、インサート成形などによ
り比較的簡単に形成することができる。The package has a package electrode on which a light emitting element can be placed in advance and can be electrically connected to one electrode of the light emitting element, and each electrode which can be connected to the other electrode of the light emitting element. Therefore, the package may be formed integrally with the electrode, or the package may be divided into a plurality of pieces and combined by fitting or the like. Such a package can be formed relatively easily by insert molding or the like.

【００１８】（発光素子１０５）本願発明に用いられる
発光素子１０５としては、液相成長法やＭＯＣＶＤ法等
により基板上にＧａＡｌＮ、ＺｎＳ、ＺｎＳｅ、Ｓｉ
Ｃ、ＧａＰ、ＧａＡｌＡｓ、ＡｌＩｎＧａＰ、ＩｎＧａ
Ｎ、ＧａＮ、ＡｌＩｎＧａＮ等の半導体を発光層として
形成させたものが用いられる。半導体の構造としては、
ＭＩＳ接合、ＰＩＮ接合やＰＮ接合を有したホモ構造、
ヘテロ構造あるいはダブルへテロ構成のものが挙げられ
る。半導体層の材料やその混晶度によって発光波長を紫
外光から赤外光まで種種選択することができる。さら
に、量子効果を持たせるため発光層を単一量子井戸構
造、多重量子井戸構造とさせても良い。(Light-Emitting Element 105) As the light-emitting element 105 used in the present invention, GaAlN, ZnS, ZnSe, Si is formed on a substrate by a liquid phase growth method, a MOCVD method or the like.
C, GaP, GaAlAs, AlInGaP, InGa
A light emitting layer formed of a semiconductor such as N, GaN, or AlInGaN is used. As a semiconductor structure,
Homo structure having MIS junction, PIN junction and PN junction,
Examples include a heterostructure or a double heterostructure. The emission wavelength can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and its degree of mixed crystal. Furthermore, in order to have a quantum effect, the light emitting layer may have a single quantum well structure or a multiple quantum well structure.

【００１９】こうしてできた半導体に真空蒸着法や熱、
光、放電エネルギーなどを利用した各種ＣＶＤ法を用い
て所望の電極を形成させる。半導体の電極は、半導体の
一方の側に設けてもよいし、両面にそれぞれ設けてもよ
い。電極が形成された半導体ウエハーをダイヤモンド製
の刃先を有するブレードが回転するダイシングソーによ
り直接フルカットするか、または刃先幅よりも広い幅の
溝を切り込んだ後（ハーフカット）、外力によって半導
体ウエハーを割る。あるいは、先端のダイヤモンド針が
往復直線運動するスクライバーにより半導体ウエハーに
極めて細いスクライブライン（経線）を例えば碁盤目状
に引いた後、外力によってウエハーを割り半導体ウエハ
ーからチップ状にカットさせるなどしてＬＥＤチップを
形成させる。A vacuum vapor deposition method or heat is applied to the semiconductor thus formed.
A desired electrode is formed by using various CVD methods utilizing light, discharge energy and the like. The semiconductor electrode may be provided on one side of the semiconductor or on both sides thereof. Directly full cut the semiconductor wafer on which the electrodes are formed with a dicing saw with a blade having a diamond blade tip, or after cutting a groove with a width wider than the blade edge width (half cut), the semiconductor wafer is cut by an external force. Break. Alternatively, an extremely thin scribe line (meridian line) is drawn on the semiconductor wafer by, for example, a grid pattern by a scriber in which a diamond needle at the tip moves reciprocally linearly, and then the wafer is split by external force to cut the semiconductor wafer into chips. Form chips.

【００２０】発光装置をフルカラー発光させるために
は、ＲＧＢの発光色を発光するＬＥＤチップを用いるこ
とができる。特に、野外などの使用を考慮する場合、高
輝度な半導体材料として緑色及び青色を窒化ガリウム系
化合物半導体を用いることが好ましく、また、赤色では
ガリウム・アルミニウム・砒素系の半導体やアルミニウ
ム・インジュウム・ガリウム・燐系の半導体を用いるこ
とが好ましいが、用途によって種々利用できる。なお、
フルカラー発光色とするためにはＲ：赤色の発光波長が
６００ｎｍから７００ｎｍ、Ｇ：緑色の発光波長が４９
５ｎｍから５６５ｎｍ、Ｂ：青色の発光波長が４３０ｎ
ｍから４９０ｎｍであることが好ましい。以下、本願発
明の具体的実施例について詳述するが本願発明はこの具
体的実施例のみに限定されるものでないことは言うまで
もない。In order to allow the light emitting device to emit full-color light, an LED chip that emits RGB light emission colors can be used. In particular, when using outdoors, it is preferable to use green and blue gallium nitride-based compound semiconductors as high-brightness semiconductor materials, and for red, gallium-aluminum-arsenic-based semiconductors and aluminum-indium-gallium. -It is preferable to use a phosphorus-based semiconductor, but various types can be used depending on the application. In addition,
In order to obtain a full-color emission color, the emission wavelength of R: red is 600 nm to 700 nm, and the emission wavelength of G: green is 49.
5 nm to 565 nm, B: blue emission wavelength is 430 n
It is preferably from m to 490 nm. Hereinafter, specific embodiments of the present invention will be described in detail, but it is needless to say that the present invention is not limited to only the specific embodiments.

【００２１】（透光性保護体１０９）透光性保護体１０
９は、各発光素子１０５やその電気的接続のためのワイ
ヤー１０４等を外部力、塵芥や水分などから保護するた
めに設けられる。したがって、透光性保護体１０９と発
光素子１０５とが密着して形成されていてもよいし、放
熱性や応力緩和のため発光素子と密着していなくとも良
い。また、透光性保護体１０９は、透過率の異なる層の
多層構成など所望に応じて２層以上に分割させて構成さ
せてもよい。この様な透光性保護体の材料として具体的
には、エポキシ樹脂、ユリア樹脂、シリコン樹脂、フッ
素樹脂、ポリカーボネート樹脂などなどの耐候性に優れ
た樹脂が好適に用いられる。(Translucent Protective Body 109) Transparent Protective Body 10
Reference numeral 9 is provided to protect each light emitting element 105, the wire 104 for electrical connection thereof, and the like from external force, dust, moisture, and the like. Therefore, the translucent protective body 109 and the light emitting element 105 may be formed in close contact with each other, or may not be in close contact with the light emitting element for heat dissipation and stress relaxation. Further, the light-transmitting protective body 109 may be divided into two or more layers as desired, such as a multilayer structure of layers having different transmittances. As a material for such a translucent protective body, specifically, a resin having excellent weather resistance such as an epoxy resin, a urea resin, a silicon resin, a fluororesin, a polycarbonate resin, or the like is preferably used.

【００２２】[0022]

【実施例】【Example】

［実施例１］発光素子としてそれぞれ赤色、緑色及び青
色の発光色を有し、各々の組み合わせでフルカラー発光
が可能な３個のＬＥＤチップを用いた。発光素子の半導
体発光層としてそれぞれＧａＡｌＡｓ（発光波長６６０
ｎｍ）、ＩｎＧａＮ（発光波長５２５ｎｍ）、ＩｎＧａ
Ｎ（発光波長４７０ｎｍ）を使用して各ＬＥＤチップを
構成させた。具体的には、赤色を発光するＬＥＤチップ
用の半導体ウエハーは、温度差液晶成長法で連続的に導
電性基板であるＰ型ガリウム・砒素基板上にＰ型ＧａＡ
ｌＡｓを成長し、その上にＮ型ＧａＡｌＡｓを成長し、
Ｐ型ＧａＡｌＡｓを形成させる。青色及び緑色を発光す
る半導体ウエハーは、絶縁性基板として厚さ４００μｍ
のサファイヤ基板上にＮ型及びＰ型窒化ガリウム化合物
半導体をＭＯＣＶＤ成長法でそれぞれ５μｍ、１μｍ堆
積させヘテロ構造のＰＮ接合を形成したものである。な
お、Ｐ型窒化ガリウム半導体は、Ｐ型ドーパントである
Ｍｇをドープした後アニールし形成させる。次に、ＬＥ
Ｄチップの各電極となるようスパッタリングにより電極
を形成させた後、各半導体ウエハーをＬＥＤチップとし
て使用するためにスクライバーによってスクライブライ
ンを引き、外力によって３５０μｍ角の大きさに切断し
た。[Example 1] As the light-emitting elements, three LED chips each having red, green, and blue emission colors and capable of full-color emission by each combination were used. As a semiconductor light emitting layer of the light emitting element, GaAlAs (emission wavelength 660
nm), InGaN (emission wavelength 525 nm), InGa
Each LED chip was constructed using N (emission wavelength 470 nm). Specifically, a semiconductor wafer for an LED chip that emits red light is a P-type GaA substrate on a P-type gallium arsenide substrate that is a conductive substrate continuously by a temperature difference liquid crystal growth method.
lAs is grown, N-type GaAlAs is grown on it,
P-type GaAlAs is formed. The semiconductor wafer that emits blue and green light has a thickness of 400 μm as an insulating substrate.
N-type and P-type gallium nitride compound semiconductors are deposited on the sapphire substrate of 5 .mu.m and 1 .mu.m respectively by MOCVD to form a heterostructure PN junction. The P-type gallium nitride semiconductor is formed by annealing after doping Mg which is a P-type dopant. Next, LE
After electrodes were formed by sputtering so as to be the electrodes of the D chip, a scribe line was drawn by a scriber to use each semiconductor wafer as an LED chip, and the semiconductor wafer was cut into a size of 350 μm square by an external force.

【００２３】りん青銅板表面に銀メッキさせたパッケー
ジ電極を液晶ポリマー内にインサート成形させてパッケ
ージ凹部及び底面にパッケージ電極を有するパッケージ
を形成させた。各ＬＥＤチップをパッケージ内の凹部に
設けられたパッケージ電極上にダイボンダによってＡｇ
ペーストを用い固定させた。ＬＥＤチップが積置させる
パッケージ電極上には、各ＬＥＤチップがそれぞれ共通
のＡｇペースト上に配置できるようコレットを用いて多
く塗り一つの接着面を形成している。ＬＥＤチップをパ
ッケージ電極上に配置後Ａｇペーストを硬化させ固定さ
せた後、ワイヤーホンデング機器を用いて直径０．０３
ｍｍのＡｕ線をＬＥＤチップの各電極、パッケージ電極
にワイヤーボンデイングした。次に、パッケージ内の凹
部に透光性保護体として無着色のエポキシ樹脂を充填さ
せ１２０℃１６時間で硬化させた。こうして３色のＬＥ
Ｄチップが封入された発光装置を１００個形成した。A package electrode having a phosphor bronze plate surface plated with silver was insert-molded in a liquid crystal polymer to form a package having a package electrode on the recess and the bottom of the package. Each LED chip is mounted on a package electrode provided in a recess in the package by a die bonder and Ag.
It was fixed using paste. On the package electrode on which the LED chips are stacked, many adhesives are formed by using a collet so that each LED chip can be arranged on a common Ag paste. After the LED chip is placed on the package electrode and the Ag paste is cured and fixed, the diameter is 0.03 using a wire-bonding device.
The Au wire of mm was wire-bonded to each electrode of the LED chip and the package electrode. Next, a non-colored epoxy resin as a translucent protective body was filled in the concave portion in the package and cured at 120 ° C. for 16 hours. In this way LE of three colors
100 light emitting devices in which D chips were enclosed were formed.

【００２４】こうして形成された発光装置を１０ｍＡの
電流にて３個点灯させたときの温度上昇を平均２０℃以
内とすることができた。また、多色発光時の混色性もパ
ッケージ内で色むらが生じなかった。When the three light emitting devices thus formed were lit at a current of 10 mA, the temperature rise could be kept within 20 ° C. on average. In addition, even in the case of multicolor emission, color unevenness did not occur in the package.

【００２５】［比較例１］実施例１の同一パッケージ電
極の代わりに図４のごとき電極の大きさを変え各パッケ
ージ電極ごとに発光素子を固定させた以外は実施例１と
同様にして形成させた。形成された発光装置を１０ｍＡ
の電流にて３個点灯させたときの温度上昇は、実施例１
と比較して１０℃以上も温度上昇があった。また、多色
発光時の混色性もパッケージ内で色むらが生じていた。[Comparative Example 1] The same package electrode as in Example 1 was formed in the same manner as in Example 1 except that the size of the electrode was changed and the light emitting element was fixed for each package electrode as shown in FIG. It was The formed light emitting device is 10 mA
The temperature rise when three lights are turned on with the current of
There was a temperature increase of 10 ° C or more as compared with. In addition, color mixing at the time of multicolor light emission causes color unevenness in the package.

【００２６】[0026]

【発明の効果】上述の如く本願発明の請求項１の構成と
することによって、放熱部を大型化できるため放熱性向
上、即ち発光装置の温度上昇を抑制することができる。
また、主要放熱経路が１経路であるので熱設計の容易化
が図られる。さらに、同一電極上に共通接着剤を用いて
発光素子が配置されるので発光特性を低下させることな
く各発光素子間隔を密にでき混色性も向上する。As described above, with the structure of claim 1 of the present invention, since the heat radiating portion can be made larger, the heat radiating property can be improved, that is, the temperature rise of the light emitting device can be suppressed.
Further, since the main heat radiation path is one, the heat design can be facilitated. Further, since the light emitting elements are arranged on the same electrode by using the common adhesive, the intervals between the light emitting elements can be made small without degrading the light emitting characteristics, and the color mixing property is improved.

【００２７】本願発明の請求項２の構成とすることによ
って、より簡便に発光特性を低下させることなく各発光
素子間隔を密にでき混色性も向上させることができる。With the structure according to the second aspect of the present invention, the intervals between the light emitting elements can be made smaller and the color mixture can be improved more easily without lowering the light emitting characteristics.

【００２８】本願発明の請求項３の構成とすることによ
って、より熱伝導性及び電気伝導性に優れた発光装置と
することができる。By adopting the structure of claim 3 of the present invention, a light emitting device having more excellent thermal conductivity and electrical conductivity can be obtained.

【００２９】本願発明の請求項４の構成とすることによ
って、混色性を向上させたフルカラー発光装置とするこ
とができる。With the structure of claim 4 of the present invention, a full-color light emitting device with improved color mixing can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図１】本願発明の発光装置の模式図を示し、図１
（Ａ）は、本願発明の発光装置の概略上面図であり図１
（Ｂ）は図１（Ａ）のＡ−Ａ断面図である。FIG. 1 shows a schematic view of a light emitting device of the present invention, and FIG.
FIG. 1A is a schematic top view of the light emitting device of the present invention.
1B is a sectional view taken along line AA of FIG.

【図２】本願発明の発光装置のパッケージ電極構造を示
した透視図である。FIG. 2 is a perspective view showing a package electrode structure of a light emitting device of the present invention.

【図３】本願発明と比較のために示した発光装置の模式
図を示し、図３（Ａ）は、比較のための発光装置の概略
上面図であり図３（Ｂ）は図３（Ａ）のＡ−Ａ断面図で
ある。3A and 3B are schematic diagrams of a light emitting device shown for comparison with the present invention, FIG. 3A is a schematic top view of a light emitting device for comparison, and FIG. 3 is a sectional view taken along line AA of FIG.

【図４】本願発明と比較のために示した発光装置のパッ
ケージ電極構造を示した透視図である。FIG. 4 is a perspective view showing a package electrode structure of a light emitting device shown for comparison with the present invention.

【図５】本願発明と比較のために示した発光素子に用い
られる接着剤の硬化時に生ずる発光素子の動きを示した
模式的上面図であり、図５（Ａ）は、硬化前に発光素子
を互いに近づけた状態を示し、図５（Ｂ）は、接着剤の
硬化後を示した図である。FIG. 5 is a schematic top view showing the movement of the light emitting element that occurs when the adhesive used in the light emitting element shown for comparison with the present invention is cured, and FIG. 5 (A) shows the light emitting element before curing. Are brought close to each other, and FIG. 5B is a diagram showing the state after the adhesive is cured.

【図６】本願発明と比較のために示した発光素子に用い
られる接着剤の硬化時に生ずる発光素子の動きを示した
模式的上面図であり、図６（Ａ）は、硬化前に発光素子
を互いに近づけた状態を示し、図６（Ｂ）は、接着剤の
硬化後を示した図である。FIG. 6 is a schematic top view showing the movement of the light emitting element that occurs when the adhesive used in the light emitting element for comparison with the present invention is cured, and FIG. 6 (A) shows the light emitting element before curing. 6A and 6B are brought close to each other, and FIG. 6B is a diagram showing the state after the adhesive is cured.

【符号の説明】[Explanation of symbols]

１０１・・・同一パッケージ電極 １０２・・・共通接着剤 １０３・・・パッケージ １０４・・・電気的接続部材 １０５・・・発光素子 １０６・・・ハンダ １０７・・・外部電極 １０８・・・基板 ３０１・・・電極 ３０２・・・接着剤 ３０３・・・パッケージ ３０４・・・電気的接続部材 ３０５・・・発光素子 ３０６・・・ハンダ ３０７・・・外部電極 ３０８・・・基板 ５０１、６０１・・・発光素子 ５０２、６０２・・・接着剤 101 ... Same package electrode 102 ... Common adhesive 103 ... Package 104 ... Electrical connection member 105 ... Light emitting element 106 ... Solder 107 ... External electrode 108 ... Substrate 301 ... Electrode 302 ... Adhesive 303 ... Package 304 ... Electrical connection member 305 ... Light emitting element 306 ... Solder 307 ... External electrode 308 ... Substrate 501, 601, ... .Light emitting elements 502, 602 ... Adhesive

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】パッケージ外部から内部に電力を供給する
ためのパッケージ電極と、パッケージ内に内包しパッケ
ージ電極に接続された少なくとも２以上の発光素子と、
を有する発光装置であって、 前記発光素子がそれぞれ同一パッケージ電極上に共通接
着剤を介して固着されていることを特徴とする発光装
置。1. A package electrode for supplying electric power from the outside to the inside of the package, and at least two or more light emitting elements that are included in the package and connected to the package electrode.
A light emitting device comprising: a light emitting device, wherein the light emitting elements are fixed on the same package electrode via a common adhesive. 【請求項２】前記共通接着剤が導電性ペーストである請
求項１記載の発光装置。2. The light emitting device according to claim 1, wherein the common adhesive is a conductive paste. 【請求項３】前記導電性ペーストがＡｇ、Ｃ、Ｃｕ、Ａ
ｕ、Ａｌ、Ｐｄから選択される少なくとも一つを含有さ
せた樹脂バインダーである請求項２記載の発光装置。3. The conductive paste is Ag, C, Cu, A
The light emitting device according to claim 2, which is a resin binder containing at least one selected from u, Al, and Pd. 【請求項４】前記発光素子がＲＧＢの各発光波長ごとに
それぞれ３以上有し、導電性基板上に形成された半導体
を有する発光素子と、絶縁性基板上に形成された半導体
を有する少なくとも２以上の発光素子と、である請求項
２記載の発光装置。4. The light-emitting element has three or more for each emission wavelength of RGB and has a semiconductor formed on a conductive substrate, and at least two having a semiconductor formed on an insulating substrate. The light emitting device according to claim 2, which is the above light emitting element.
JP8111786A 1996-05-07 1996-05-07 Light emitting device Pending JPH09298314A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8111786A JPH09298314A (en) 1996-05-07 1996-05-07 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8111786A JPH09298314A (en) 1996-05-07 1996-05-07 Light emitting device

Publications (1)

Publication Number Publication Date
JPH09298314A true JPH09298314A (en) 1997-11-18

Family

ID=14570133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8111786A Pending JPH09298314A (en) 1996-05-07 1996-05-07 Light emitting device

Country Status (1)

Country Link
JP (1) JPH09298314A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647126B1 (en) * 2005-02-02 2006-11-23 럭스피아 주식회사 LED package
JP2007281473A (en) * 2006-04-03 2007-10-25 Ivoclar Vivadent Ag Semiconductor radiation source
JP2007281472A (en) * 2006-04-03 2007-10-25 Ivoclar Vivadent Ag Semiconductor radiation source and photocuring device
JP2007318133A (en) * 2006-05-23 2007-12-06 Au Optronics Corp Package structure of light-emitting diode, and application thereof
JP2011216891A (en) * 2010-04-01 2011-10-27 Lg Innotek Co Ltd Light-emitting device package and lighting system
CN102569594A (en) * 2010-12-24 2012-07-11 展晶科技(深圳)有限公司 Package carrier and light emitting diode package structure using same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647126B1 (en) * 2005-02-02 2006-11-23 럭스피아 주식회사 LED package
JP2007281473A (en) * 2006-04-03 2007-10-25 Ivoclar Vivadent Ag Semiconductor radiation source
JP2007281472A (en) * 2006-04-03 2007-10-25 Ivoclar Vivadent Ag Semiconductor radiation source and photocuring device
JP2007318133A (en) * 2006-05-23 2007-12-06 Au Optronics Corp Package structure of light-emitting diode, and application thereof
JP2011216891A (en) * 2010-04-01 2011-10-27 Lg Innotek Co Ltd Light-emitting device package and lighting system
US9520383B2 (en) 2010-04-01 2016-12-13 Lg Innotek Co., Ltd. Light emitting device package and lighting system
CN102569594A (en) * 2010-12-24 2012-07-11 展晶科技(深圳)有限公司 Package carrier and light emitting diode package structure using same

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