JPH09293665A - Manufacture of x-ray mask and manufacturing device thereof - Google Patents
Manufacture of x-ray mask and manufacturing device thereofInfo
- Publication number
- JPH09293665A JPH09293665A JP10698596A JP10698596A JPH09293665A JP H09293665 A JPH09293665 A JP H09293665A JP 10698596 A JP10698596 A JP 10698596A JP 10698596 A JP10698596 A JP 10698596A JP H09293665 A JPH09293665 A JP H09293665A
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- Japan
- Prior art keywords
- film
- ray
- temperature
- mask
- window region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、Ｘ線露光用マスク
の製造方法、およびその製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray exposure mask manufacturing method and a manufacturing apparatus thereof.
【０００２】[0002]
【従来の技術】半導体デバイスのパターンサイズは微細
化の一途を辿っており、このようなパターンの微細化に
伴って、回路パターンを露光基板上に転写するためのリ
ソグラフィー技術には、さらなる高精度化が要求されて
いる。2. Description of the Related Art The pattern size of semiconductor devices is becoming finer, and with the miniaturization of such patterns, the lithography technique for transferring a circuit pattern onto an exposure substrate has a higher precision. Is required.
【０００３】光リソグラフィー技術は、露光光源の短波
長化、レジストの解像力増加、位相シフトマスクや超解
像技術の導入により、０．１５μｍルールのデバイスへ
の適用の展望が開けた。しかしながら、光リソグラフィ
にはＡｒＦエキシマレーザー等の短波長光学系の確立、
レジストの開発、マスクの欠陥検査・修正技術の確立な
ど克服すべき課題は多い。このような光リソグラフィに
代わる微細加工技術としての電子ビーム（ＥＢ）直接描
画では、キャラクタ・プロジェクション法による高速化
が推進されているものの、描画精度とスループットとの
双方を満足することは容易ではない。The photolithography technology has a prospect of application to devices of 0.15 μm rule by shortening the wavelength of the exposure light source, increasing the resolution of the resist, and introducing a phase shift mask and super-resolution technology. However, for optical lithography, the establishment of short-wavelength optical systems such as ArF excimer lasers,
There are many problems to be overcome such as resist development and mask defect inspection / correction technology. In electron beam (EB) direct writing as a microfabrication technique replacing such optical lithography, speeding up by a character projection method has been promoted, but it is not easy to satisfy both the writing precision and the throughput. .
【０００４】そこで、光リソグラフィの次の世代を担う
技術としてＸ線リソグラフィが有望視されている。ここ
で用いられるＸ線は、従来の露光光に比して波長が遥か
に短いために回折の影響が極めて小さく、しかも、光源
として放射光を用いることにより、光リソグラフィの課
題であるフォーカスマージンを大きくすることができる
という利点を有している。しかしながら、Ｘ線は多くの
材料に対する屈折率がほぼ１であるため、屈折光学系を
使用することができず、現在は等倍転写が主流とされて
いる。したがって、Ｘ線露光用マスクの表面に設けられ
るＸ線吸収体パターンは、実デバイスと同サイズで形成
されていることが要求される。これらの経緯から、Ｘ線
リソグラフィが克服すべき問題の一つとして、Ｘ線吸収
体の微細加工技術およびその位置精度の向上が挙げられ
る。Therefore, X-ray lithography is regarded as a promising technology for the next generation of optical lithography. The X-ray used here has a much shorter wavelength than that of the conventional exposure light, so that the influence of diffraction is extremely small. Moreover, by using radiated light as the light source, the focus margin, which is a problem of optical lithography, can be reduced. It has the advantage that it can be made larger. However, since the refractive index of X-rays for many materials is almost 1, it is not possible to use a refracting optical system, and at present, the same-magnification transfer is predominant. Therefore, the X-ray absorber pattern provided on the surface of the X-ray exposure mask is required to be formed in the same size as the actual device. From these circumstances, one of the problems to be overcome by X-ray lithography is the fine processing technology of the X-ray absorber and the improvement of its positional accuracy.
【０００５】露光基板上では高いコントラストが必要と
されるため、Ｘ線吸収体は厚さ１ないし２μｍ程度のＸ
線透過膜上に、主としてＸ線阻止能力の高い重金属で形
成される。このようにＸ線吸収体は薄膜上に形成される
ため、形成されたパターンの位置歪みを抑えるには、Ｘ
線吸収体の高精度な応力制御と均一性の向上が要求され
ている。Since a high contrast is required on the exposed substrate, the X-ray absorber has an X-ray thickness of 1 to 2 μm.
It is mainly formed of a heavy metal having a high X-ray blocking ability on the radiation transparent film. Since the X-ray absorber is formed on the thin film in this manner, X-ray absorber can be used to suppress positional distortion of the formed pattern.
There is a demand for highly accurate stress control and improved uniformity of the line absorber.
【０００６】現行プロセスでは、Ｘ線透過膜はまずＳｉ
基板上に成膜された後、ウェットエッチング法を用いて
裏面からＳｉ基板の所定の領域を取り除くことによって
薄膜化してウインドウ領域を形成している。Ｘ線吸収体
をＸ線透過性薄膜上に形成した後にこの薄膜化工程を行
なう場合、Ｘ線透過膜の応力が開放され、膜の伸縮が生
じ、これに起因してＸ線吸収体膜に応力変化が生じる。
そのため、Ｘ線吸収体膜は、ウインドウ領域を形成した
後にＸ線透過膜上に形成することが望ましい。In the current process, the X-ray transparent film is first made of Si.
After the film is formed on the substrate, a predetermined region of the Si substrate is removed from the back surface by a wet etching method to form a thin film to form a window region. When this thinning step is performed after forming the X-ray absorber on the X-ray transparent thin film, the stress of the X-ray transparent film is released and the film expands and contracts, which causes the X-ray absorber film to expand. Stress changes occur.
Therefore, it is desirable that the X-ray absorber film is formed on the X-ray transmissive film after forming the window region.
【０００７】Ｘ線吸収体の成膜においては、主として応
力制御に適したスパッタリング法が用いられており、成
膜後のアニールやイオン注入等による応力調整法も確立
されている。しかしながらこれらの方法では、応力の面
内分布を補正することはできないため、パターン位置歪
みを解消するには、Ｘ線吸収体の成膜時における面内の
応力分布を低減しなければならない。しかし、薄膜化さ
れたＸ線透過膜上への成膜の場合には成膜中の温度制御
が困難であるため、均一性に優れた低応力のＸ線吸収体
の形成をより困難なものとしている。In the film formation of the X-ray absorber, a sputtering method suitable for stress control is mainly used, and a stress adjusting method by annealing or ion implantation after the film formation is also established. However, these methods cannot correct the in-plane stress distribution, and therefore, in order to eliminate the pattern positional distortion, the in-plane stress distribution during film formation of the X-ray absorber must be reduced. However, in the case of forming a film on a thin X-ray transparent film, it is more difficult to form an X-ray absorber having low stress and excellent uniformity because it is difficult to control the temperature during the film formation. I am trying.
【０００８】[0008]
【発明が解決しようとする課題】本発明の目的は、Ｘ線
マスク製造の一工程であるＸ線吸収体の成膜において、
Ｘ線透過性薄膜上にＸ線吸収体を低応力、高い均一性で
成膜する方法を提供することにある。また、本発明の目
的は、均一性に優れたＸ線吸収体膜を、Ｘ線透過膜上に
形成し得るＸ線吸収体成膜装置を提供することにある。An object of the present invention is to form an X-ray absorber, which is one step of manufacturing an X-ray mask,
An object of the present invention is to provide a method of forming an X-ray absorber on an X-ray transparent thin film with low stress and high uniformity. Another object of the present invention is to provide an X-ray absorber film forming apparatus capable of forming an X-ray absorber film having excellent uniformity on an X-ray transmitting film.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するため
に、本発明は、マスク支持体上にＸ線透過膜を形成する
工程と、前記マスク支持体の裏面の所定の領域をエッチ
ング除去してウインドウ領域を形成する工程と、前記Ｘ
線透過膜上にＸ線吸収体膜を形成する工程とを具備し、
前記Ｘ線吸収体膜を形成する工程は、前記Ｘ線透過膜の
裏面に形成されたウインドウ領域に離間・近接して配置
された温度補正部材により、このＸ線透過膜の温度を補
正しつつ行なわれることを特徴とするＸ線マスクの製造
方法を提供する。In order to solve the above problems, the present invention provides a step of forming an X-ray transparent film on a mask support, and etching and removing a predetermined region on the back surface of the mask support. Forming a window region with
Forming an X-ray absorber film on the X-ray transparent film,
In the step of forming the X-ray absorbing film, the temperature of the X-ray transmitting film is corrected by a temperature correction member that is arranged close to and in the window region formed on the back surface of the X-ray transmitting film. A method for manufacturing an X-ray mask, which is characterized by being performed.
【００１０】前記温度補正部材には、前記Ｘ線透過膜の
温度分布を低減するような温度勾配を設定することが好
ましい。さらに、前記Ｘ線透過膜からの前記温度補正部
材の距離を、前記Ｘ透過膜の温度分布を低減するように
制御することが好ましい。It is preferable that the temperature correction member has a temperature gradient that reduces the temperature distribution of the X-ray transparent film. Furthermore, it is preferable to control the distance of the temperature correction member from the X-ray transparent film so as to reduce the temperature distribution of the X-permeable film.
【００１１】また、本発明は、マスク支持体により支持
され、その裏面の所定の領域にウインドウ領域が設けら
れたＸ線透過膜の表面にＸ線吸収体膜を形成する成膜装
置であり、前記Ｘ線透過膜の温度を制御するための温度
補正部材が、前記Ｘ線透過膜の裏面に形成されたウイン
ドウ領域に離間・近接して配置されていることを特徴と
するＸ線吸収体成膜装置を提供する。Further, the present invention is a film forming apparatus for forming an X-ray absorber film on the surface of an X-ray transparent film, which is supported by a mask support and has a window region provided in a predetermined region on the back surface thereof. An X-ray absorber structure characterized in that a temperature correction member for controlling the temperature of the X-ray transparent film is arranged close to and spaced from a window region formed on the back surface of the X-ray transparent film. A membrane device is provided.
【００１２】前記温度補正部材と前記Ｘ線透過膜との距
離が、前記ウインドウ領域の中央部と端部とで異なり、
ウインドウ領域の端部における距離が中央部における距
離より小さいことが好ましい。さらに、前記温度補正部
材は、前記Ｘ線マスクの裏面に形成されたウインドウ領
域の中央部に相当する領域に貫通穴が設けられているこ
とが好ましい。The distance between the temperature correction member and the X-ray transparent film differs between the central portion and the end portion of the window region,
The distance at the edge of the window region is preferably smaller than the distance at the center. Further, it is preferable that the temperature correction member is provided with a through hole in a region corresponding to a central portion of a window region formed on the back surface of the X-ray mask.
【００１３】[0013]
【発明の実施の形態】通常、薄膜化されたＸ線透過膜上
にスパッタリング法などによりＸ線吸収体膜を形成する
場合には、このＸ線透過膜が薄膜であるゆえに熱伝導が
抑えられて、薄膜の周辺部と中央部との間に温度差が生
じる。すなわち、Ｘ線透過膜上に大きな温度分布が発生
する。膜形成後の応力は成形時の温度に強く依存するた
め、Ｘ線透過膜に生じた温度分布により、この上に形成
されるＸ線吸収体膜の応力に分布が生じてしまう。BEST MODE FOR CARRYING OUT THE INVENTION Generally, when an X-ray absorber film is formed on a thinned X-ray transparent film by a sputtering method or the like, heat conduction is suppressed because the X-ray transparent film is a thin film. As a result, a temperature difference occurs between the peripheral portion and the central portion of the thin film. That is, a large temperature distribution is generated on the X-ray transparent film. Since the stress after the film formation strongly depends on the temperature at the time of molding, the stress distribution of the X-ray absorber film formed on the X-ray transmission film has a distribution due to the temperature distribution generated in the X-ray transmission film.
【００１４】本発明者らは、このような膜形成時の温度
分布を抑えることを種々検討し、本発明を成すに至っ
た。図１に、本発明のＸ線マスクの製造方法の概念図を
示す。図１に示すように、本発明の方法においては、Ｘ
線透過膜３の表面にスパッタリング法によりＸ線吸収体
膜を形成するに当たって、Ｘ線透過膜３の裏面に近接し
て温度補正部材１を配置しているので、Ｘ線透過膜３の
温度分布を低減することができた。すなわち、温度補正
部材１からの輻射熱等によって支持体上の温度差が低減
され、結果としてＸ線透過膜上に形成されるＸ線吸収体
膜の応力分布が低減される。The present inventors have made various studies to suppress such temperature distribution during film formation and have completed the present invention. FIG. 1 shows a conceptual diagram of an X-ray mask manufacturing method of the present invention. As shown in FIG. 1, in the method of the present invention, X
When the X-ray absorber film is formed on the surface of the X-ray transparent film 3 by the sputtering method, the temperature correction member 1 is arranged close to the back surface of the X-ray transparent film 3, so that the temperature distribution of the X-ray transparent film 3 is distributed. Could be reduced. That is, the radiant heat from the temperature correction member 1 reduces the temperature difference on the support, and consequently reduces the stress distribution of the X-ray absorber film formed on the X-ray transmissive film.
【００１５】温度補正部材１のＸ線透過膜３からの距離
は、成膜条件（ガス圧力、印加電力）等に応じて適宜選
択することができるが、例えば、０．０１〜０．５ｍｍ
程度とすることが好ましい。０．０１ｍｍ未満では、制
御することが困難となり、一方０．５ｍｍを越えると、
十分な温度補正効果を発揮できないおそれがある。The distance of the temperature correction member 1 from the X-ray transparent film 3 can be appropriately selected according to the film forming conditions (gas pressure, applied power) and the like, but is, for example, 0.01 to 0.5 mm.
It is preferable to set the degree. If it is less than 0.01 mm, it becomes difficult to control, while if it exceeds 0.5 mm,
There is a risk that the temperature correction effect will not be sufficient.
【００１６】また、温度補正部材１は、例えば、その断
面において一定の温度に設定して用いることができる。
この場合、設定温度は、成膜条件等に応じて適宜決定す
ることができるが、例えば、１００〜５００℃程度とす
ることができる。The temperature correction member 1 can be used, for example, by setting a constant temperature in its cross section.
In this case, the set temperature can be appropriately determined according to the film forming conditions and the like, but can be set to about 100 to 500 ° C., for example.
【００１７】なお、従来の方法によりＸ線透過膜上にＸ
線吸収体膜を成膜した際の成膜中のＸ線透過膜の温度分
布の一例を、図２のグラフに示す。Ｘ線透過膜として
は、薄膜化したＳｉＣ膜（厚さ１μｍ）を使用し、この
上にスパッタリング法によりＸ線吸収体としてのＷ−Ｒ
ｅ膜を成膜した。図２に示されるように、Ｘ線透過膜の
中央部と端部とでは、±１５％以上の温度分布が生じて
おり、これに起因して同程度のレベルの応力分布が発生
する。It is to be noted that X is formed on the X-ray transparent film by a conventional method.
An example of the temperature distribution of the X-ray transparent film during film formation when the line absorber film is formed is shown in the graph of FIG. A thin SiC film (thickness 1 μm) is used as the X-ray transmission film, and a WR as an X-ray absorber is formed on the SiC film by a sputtering method.
An e film was formed. As shown in FIG. 2, a temperature distribution of ± 15% or more occurs in the central portion and the end portion of the X-ray transparent film, and due to this, a stress distribution of a similar level occurs.
【００１８】図３には、本発明の方法により温度補正部
材をＸ線透過膜の裏面に設置してＸ線吸収体膜を形成し
た際の温度分布を示す。ここで、Ｘ線透過膜としては、
前述と同様の厚さ１μｍのＳｉＣ膜を使用し、３００℃
に設定された温度補正部材１を前記Ｘ線透過膜から０．
１ｍｍの距離に配置して、図１に示すような構成で成膜
を行なった。図３のグラフに示されるように、Ｘ線透過
膜の中央部と端部との温度分布±１０％以下に収まって
おり、応力分布もこれと同等のレベルまで低減できるこ
とが予測される。FIG. 3 shows the temperature distribution when the temperature compensating member is installed on the back surface of the X-ray transmitting film by the method of the present invention to form the X-ray absorber film. Here, as the X-ray transparent film,
Using the same 1 μm thick SiC film as above, 300 ℃
The temperature correction member 1 set to 0.
The film was formed at a distance of 1 mm with the configuration shown in FIG. As shown in the graph of FIG. 3, the temperature distribution between the central portion and the end portion of the X-ray transparent film is within ± 10%, and it is expected that the stress distribution can be reduced to a level equivalent to this.
【００１９】なお、本発明のＸ線吸収体成膜装置の概略
は、図４に示すとおりである。真空チャンバー８内に
は、マスク基板６の裏面側に近接するように温度補正部
材１が配置されており、この温度補正部材は温度制御系
７により制御される。かかる状態でスパッタリング法に
より成膜することによって、低応力、高い均一性のＸ線
吸収体膜が得られる。An outline of the X-ray absorber film forming apparatus of the present invention is as shown in FIG. The temperature correction member 1 is arranged in the vacuum chamber 8 so as to be close to the back surface side of the mask substrate 6, and this temperature correction member is controlled by the temperature control system 7. By forming a film by the sputtering method in this state, an X-ray absorber film with low stress and high uniformity can be obtained.
【００２０】また、本発明の方法においては、Ｘ線透過
膜の温度分布を相殺するような温度分布を温度補正部材
１に設けてもよい。図５のグラフには、温度補正部材の
温度分布の一例を示している。このように温度が調節さ
れた温度補正部材を、Ｘ線透過膜から０．１ｍｍの間隔
で配置したところ、Ｘ線透過膜上の温度分布は、図５の
グラフに示されるように±５％以下に収まった。すなわ
ち、Ｘ線透過膜の温度分布を打ち消すような形の温度分
布を温度補正部材に設定することによって、Ｘ線透過膜
の温度の均一性が大幅に改善されることがわかる。Further, in the method of the present invention, the temperature correction member 1 may be provided with a temperature distribution that cancels the temperature distribution of the X-ray transparent film. The graph of FIG. 5 shows an example of the temperature distribution of the temperature correction member. When the temperature correction members whose temperatures were adjusted as described above were arranged at an interval of 0.1 mm from the X-ray transparent film, the temperature distribution on the X-ray transparent film was ± 5% as shown in the graph of FIG. It fell below. That is, it is understood that the temperature uniformity of the X-ray transparent film is significantly improved by setting the temperature correction member with a temperature distribution that cancels the temperature distribution of the X-ray transparent film.
【００２１】なお、温度補正部材１に設けられる温度分
布は、ここで示した例に限定されるものではなく、Ｘ線
透過膜の温度分布を低減するように、その温度勾配等を
適宜決定することができる。The temperature distribution provided in the temperature correction member 1 is not limited to the example shown here, and its temperature gradient and the like are appropriately determined so as to reduce the temperature distribution of the X-ray transparent film. be able to.
【００２２】あるいは、図６に示すように、Ｘ線透過膜
３に対向する面に凹凸が設けられた温度補正部材９を用
いることもできる。温度補正部材９は、Ｘ線透過膜３の
中央部では、Ｘ線透過膜３との距離が大きく、一方、Ｘ
線透過膜３の裏面に形成されたウインドウ領域の端部で
は、Ｘ線透過膜３との距離が小さくなるような断面形状
を有している。このような断面形状とすることで、Ｘ線
透過性薄膜上の輻射熱量に分布が生じるため、温度補正
部材に温度分布を与えた場合と同様の効果が得られ、Ｘ
線透過膜の面内温度の均一性は向上する。なお、この場
合、温度補正部材の断面形状は、図６に示した形状に限
定されるものではなく、Ｘ線透過膜の温度分布を低減す
るように、Ｘ線透過膜との距離がウインドウ領域の端部
において小さくし、一方、ウインドウ領域の中央部にお
いて大きくした任意の形状とすることができる。Alternatively, as shown in FIG. 6, it is also possible to use a temperature correction member 9 in which irregularities are provided on the surface facing the X-ray transparent film 3. The temperature correction member 9 has a large distance from the X-ray transparent film 3 at the center of the X-ray transparent film 3, while
The end portion of the window region formed on the back surface of the X-ray transparent film 3 has a cross-sectional shape such that the distance from the X-ray transparent film 3 becomes small. With such a cross-sectional shape, the amount of radiant heat on the X-ray transparent thin film has a distribution, so that the same effect as when the temperature distribution is given to the temperature correction member can be obtained.
The uniformity of the in-plane temperature of the linear transmission film is improved. In this case, the cross-sectional shape of the temperature correction member is not limited to the shape shown in FIG. 6, and the distance from the X-ray transparent film is the window region so as to reduce the temperature distribution of the X-ray transparent film. Can have an arbitrary shape with a small size at the end of the window and a large size at the center of the window area.
【００２３】さらに、場合によっては、図７に示すよう
に、ウインドウ領域の中央部に相当する領域に貫通穴を
有する温度補正部材１０を用いることもできる。このよ
うなリング状の温度補正部材は、Ｘ線透過膜裏面の温度
を赤外線によりモニターする場合に特に有効であり、こ
の温度補正部材をＸ線透過膜から０．１ｍｍの距離に配
置したところ、成膜中の薄膜の温度分布は、図８のグラ
フに示されるように±７％に低減された。Further, in some cases, as shown in FIG. 7, a temperature correction member 10 having a through hole in a region corresponding to the center of the window region can be used. Such a ring-shaped temperature correction member is particularly effective when the temperature of the back surface of the X-ray transparent film is monitored by infrared rays. When the temperature correction member is arranged at a distance of 0.1 mm from the X-ray transparent film, The temperature distribution of the thin film during film formation was reduced to ± 7% as shown in the graph of FIG.
【００２４】なお、温度補正部材の温度分布や輻射熱量
等を変化させる方法は、上述した方法に限定されるもの
ではなく、例えば、温度補正部材とＸ線透過膜との間隔
を制御する機構を設けることによって達成することもで
きる。このような機構を用いてＸ線透過膜からの温度補
正部材の距離を制御することによって、スパッタリング
ガス圧力、印加パワーやターゲットと基板との間の距離
など、異なる成膜条件においてもＸ線透過膜の温度を容
易に制御することができる。The method of changing the temperature distribution, the amount of radiant heat, etc. of the temperature correction member is not limited to the above-mentioned method. For example, a mechanism for controlling the distance between the temperature correction member and the X-ray transmission film may be used. It can also be achieved by providing. By controlling the distance of the temperature correction member from the X-ray transparent film using such a mechanism, X-ray transmission is performed even under different film forming conditions such as sputtering gas pressure, applied power, and distance between target and substrate. The temperature of the membrane can be easily controlled.
【００２５】以下、具体例を示して本発明をより詳細に
説明する。図９および１０は、本発明の一実施形態に関
わるＸ線マスクの製造工程を表す断面図である。Hereinafter, the present invention will be described in more detail with reference to specific examples. 9 and 10 are cross-sectional views showing the manufacturing process of the X-ray mask according to the embodiment of the present invention.
【００２６】予め、次のようにしてＳｉ基板に表面処理
を施しておく。まず、高周波加熱方式のＬＰＣＶＤ装置
を用いて、グラファイトにＳｉＣをコーティングしたサ
セプタ上に、厚さ６００μｍ、面方位（１００）の両面
研磨した３インチＳｉ基板を設置した。次いで、１１０
０℃でＨＣｌガスによりＳｉ基板の気相エッチングを施
すことにより、Ｓｉ基板上に依存する自然酸化膜および
重金属類等の汚染物を除去した。Surface treatment is applied to the Si substrate in advance as follows. First, using a high-frequency heating LPCVD apparatus, a 3-inch Si substrate having a thickness of 600 μm and a surface orientation (100) polished on both sides was set on a susceptor in which graphite was coated with SiC. Then 110
By subjecting the Si substrate to gas phase etching with HCl gas at 0 ° C., contaminants such as a natural oxide film and heavy metals depending on the Si substrate were removed.
【００２７】このように表面処理されたＳｉ基板を用い
て、以下の工程でＸ線透過膜およびＸ線吸収体膜を形成
した。まず、成膜装置内に表面処理後のＳｉ基板を配置
し、Ｓｉ原料としてのシラン（ＳｉＨ4 ）、Ｃ原料とし
てのアセチレン（Ｃ2 Ｈ2 ）、および添加ガスとしての
塩化水素（ＨＣｌ）を供給して、基板温度１１００℃の
条件のもと、図９（ａ）に示すようにＳｉ基板２上にＳ
ｉＣ膜（Ｘ線透過膜）３を１μｍの膜厚で形成した。Using the Si substrate thus surface-treated, an X-ray transmission film and an X-ray absorber film were formed in the following steps. First, a surface-treated Si substrate is placed in a film forming apparatus, and silane (SiH 4 ) as a Si raw material, acetylene (C 2 H 2 ) as a C raw material, and hydrogen chloride (HCl) as an additive gas are added. Then, under the condition that the substrate temperature is 1100 ° C., as shown in FIG.
The iC film (X-ray transparent film) 3 was formed to a film thickness of 1 μm.
【００２８】次に、マスク支持体であるＳｉ基板２を、
厚さ４ｍｍ、内径５２ｍｍの石英補強枠４と直接接合に
より接合した。この石英補強枠４をエッチングマスクと
して弗酸および硝酸の混合液によりＳｉ基板２の中央部
を除去し、図９（ｂ）に示すようにＳｉ基板２の裏面の
５２ｍｍφの開口部（ウインドウ領域）を形成した。Next, the Si substrate 2 which is the mask support is
The quartz reinforcing frame 4 having a thickness of 4 mm and an inner diameter of 52 mm was directly joined. The quartz reinforcing frame 4 is used as an etching mask to remove the central portion of the Si substrate 2 with a mixed solution of hydrofluoric acid and nitric acid, and a 52 mmφ opening (window region) on the back surface of the Si substrate 2 as shown in FIG. 9B. Was formed.
【００２９】続いて、ＳｉＣ膜３の上にＡｌ2 Ｏ3 膜１
１およびＷ−Ｒｅ膜１２をスパッタリング法により順次
形成した。なお、ここで形成されたＷ−Ｒｅ膜１２は、
Ｘ線吸収体としての重金属膜であり、３００Ｗの印加Ｒ
Ｆ電力のもと、高い密度のＷ−Ｒｅ膜を形成可能で、か
つ応力がほぼ０となる条件であるガス圧力（２．３５Ｐ
ａ）で成膜した。このＷ−Ｒｅ膜１２を成膜する際に
は、図１に示したようにＳｉＣ膜３の裏面から０．１ｍ
ｍの距離に、３００℃に設定された温度補正部材を配置
して、応力の均一性制御を行なった。Subsequently, the Al 2 O 3 film 1 is formed on the SiC film 3.
1 and the W-Re film 12 were sequentially formed by the sputtering method. The W-Re film 12 formed here is
It is a heavy metal film as an X-ray absorber and has an applied R of 300W.
A gas pressure (2.35 P) under which a high density W-Re film can be formed under F power and the stress is almost zero.
The film was formed in a). When the W-Re film 12 is formed, as shown in FIG.
A temperature correction member set at 300 ° C. was arranged at a distance of m to control stress uniformity.
【００３０】さらに、Ｗ−Ｒｅ膜１２の応力の絶対値を
低減させるために、このＷ−Ｒｅ膜１２にエネルギー１
８０ｋｅＶ、ドーズ量３×１０15 atoms／ｃｍ2 でＡｒ
イオン注入を行なった。その後、Ｗ−Ｒｅ膜１２上に、
スパッタリング法によりＣｒ膜１３を５０ｎｍの膜厚で
成膜して、図９（ｃ）に示すような構造を得た。Further, in order to reduce the absolute value of the stress of the W-Re film 12, the W-Re film 12 has an energy of 1
Ar at 80 keV and a dose of 3 × 10 15 atoms / cm 2 .
Ion implantation was performed. Then, on the W-Re film 12,
A Cr film 13 having a film thickness of 50 nm was formed by a sputtering method to obtain a structure as shown in FIG.
【００３１】次いで、図９（ｄ）に示すように、Ｃｒ膜
１３上に電子ビーム描画用レジストを膜厚３００ｎｍで
塗布し、Ｎ2 雰囲気中で１７０℃に加熱してレジスト中
の溶媒を除去してレジスト膜を形成した。続いて、ＥＢ
描画装置によりドーズ量９０μＣ／ｃｍ2 で描画を行な
った後、専用現像液を用いて現像処理を施して所望のレ
ジストパターン１４を形成した。Next, as shown in FIG. 9 (d), a resist for electron beam drawing having a film thickness of 300 nm is applied on the Cr film 13 and heated to 170 ° C. in an N 2 atmosphere to remove the solvent in the resist. Then, a resist film was formed. Then, EB
After drawing with a drawing apparatus at a dose amount of 90 μC / cm 2 , a desired resist pattern 14 was formed by performing a developing process using a dedicated developing solution.
【００３２】その後、図１０（ａ）に示すように、マグ
ネトロンＲＩＥ装置により、Ｃｌ2およびＯ2 混合ガス
を用いて、レジストパタ−ン１４をマスクとしてＣｒ膜
７１３をエッチングした。さらに、図１０（ｂ）に示す
ように、Ｏ2 プラズマ処理によりレジストパターン１４
を除去し、マグネトロンＲＩＥ装置により、ＳＦ6 およ
びＣＨＦ3 混合ガスを用いて、Ｃｒ膜１３をマスクとし
てＷ−Ｒｅ膜１２を選択エッチングした。Then, as shown in FIG. 10A, the Cr film 713 was etched by a magnetron RIE apparatus using a mixed gas of Cl 2 and O 2 with the resist pattern 14 as a mask. Furthermore, as shown in FIG. 10B, a resist pattern 14 is formed by O 2 plasma treatment.
Was removed, and the W-Re film 12 was selectively etched by a magnetron RIE apparatus using a mixed gas of SF 6 and CHF 3 with the Cr film 13 as a mask.
【００３３】最後に、図１０（ｃ）に示すように、Ｓｉ
Ｃ膜３の裏面に反射防止膜としてＡｌ2 Ｏ3 膜１５をス
パッタリング法により成膜した。以上の方法により成膜
したＸ線マスクのパターン位置歪みを、レーザーを用い
た位置検査装置を用いて測定したところ、従来の製造法
により製作したＸ線マスクより３σ値において０．０３
μｍ向上することが確認された。Finally, as shown in FIG. 10 (c), Si
An Al 2 O 3 film 15 was formed as an antireflection film on the back surface of the C film 3 by a sputtering method. The pattern positional distortion of the X-ray mask formed by the above method was measured by using a position inspection device using a laser. As a result, it was 0.03 at a 3σ value of the X-ray mask manufactured by the conventional manufacturing method.
It was confirmed that the value was improved by μm.
【００３４】なお、本発明は上述した例に限定されるも
のではなく、適宜変更して実施することができる。例え
ば、Ｘ線透過性薄膜はＳｉＣに限らず、ＳｉＮ，ＢＮ，
ボロンドープしたＳｉまたはダイヤモンドを用いること
ができ、反射防止膜としては、酸化アルミニウム以外に
も、ＳｉＯ2 ，ＳＯＧ，またはＩＴＯなどを用いてもよ
い。また、Ｘ線吸収体はＷ−Ｒｅに限らず、Ｗあるいは
Ｗ−Ｔｉ，Ｗ−Ｎ，さらにはＴａ等のスパッタリング法
で成膜可能な金属を用いて形成することが可能である。
その他、本発明の要旨を逸脱しない範囲で、種々変形し
て実施することができる。The present invention is not limited to the above-mentioned examples, and can be implemented with appropriate modifications. For example, the X-ray transparent thin film is not limited to SiC, but SiN, BN,
Boron-doped Si or diamond can be used, and as the antireflection film, SiO 2 , SOG, ITO or the like may be used in addition to aluminum oxide. Further, the X-ray absorber is not limited to W-Re, and can be formed using W or W-Ti, W-N, or a metal such as Ta that can be formed into a film by a sputtering method.
In addition, various modifications can be made without departing from the scope of the present invention.
【００３５】[0035]
【発明の効果】以上、詳述したように本発明によれば、
低応力かつ面内均一性に優れたＸ線吸収体を形成するこ
とができる。本発明の方法により製造されたＸ線マスク
は、パターン位置精度が優れているので、かかるＸ線マ
スクを用いることによってＸ線リソグラフィの精度を著
しく向上させることができ、その工業的価値は絶大であ
る。As described in detail above, according to the present invention,
An X-ray absorber having low stress and excellent in-plane uniformity can be formed. Since the X-ray mask manufactured by the method of the present invention has excellent pattern position accuracy, the accuracy of X-ray lithography can be significantly improved by using such an X-ray mask, and its industrial value is enormous. is there.
【図１】本発明で用いられる温度補正部材に関する概念
図。FIG. 1 is a conceptual diagram of a temperature correction member used in the present invention.
【図２】従来方法の成膜時Ｘ線透過性薄膜の温度分布を
表すグラフ図。FIG. 2 is a graph showing a temperature distribution of an X-ray transparent thin film during film formation by a conventional method.
【図３】本発明における成膜時Ｘ線透過性薄膜の温度分
布を表すグラフ図。FIG. 3 is a graph showing the temperature distribution of an X-ray transparent thin film during film formation in the present invention.
【図４】本発明のＸ線吸収体成膜装置の一例を表す概略
図。FIG. 4 is a schematic diagram showing an example of an X-ray absorber film forming apparatus of the present invention.
【図５】本発明における成膜時Ｘ線透過性薄膜の温度分
布を表すグラフ図。FIG. 5 is a graph showing the temperature distribution of the X-ray transparent thin film during film formation in the present invention.
【図６】本発明の方法で用いられる温度補正部材に関す
る概念図。FIG. 6 is a conceptual diagram relating to a temperature correction member used in the method of the present invention.
【図７】本発明の方法で用いられる温度補正部材に関す
る概念図。FIG. 7 is a conceptual diagram relating to a temperature correction member used in the method of the present invention.
【図８】本発明における成膜時Ｘ線透過性薄膜の温度分
布を表すグラフ図。FIG. 8 is a graph showing the temperature distribution of the X-ray transparent thin film during film formation in the present invention.
【図９】本発明の一実施形態に関わるＸ線マスクの製造
工程を示す断面図。FIG. 9 is a cross-sectional view showing the manufacturing process of the X-ray mask according to the embodiment of the present invention.
【図１０】本発明の一実施形態に関わるＸ線マスクの製
造工程を示す断面図。FIG. 10 is a cross-sectional view showing the manufacturing process of the X-ray mask according to the embodiment of the present invention.
１，９，１０…温度補正部材 ２…Ｓｉ基板 ３…ＳｉＣ（Ｘ線透過膜） ４…石英補強枠 ５…スパッタターゲット ６…マスク基板 ７…温度制御系 ８…真空チャンバー １１…Ａｌ2 Ｏ3 膜 １２…Ｗ−Ｒｅ膜（Ｘ線吸収体膜） １３…Ｃｒ膜 １４…電子ビームレジストパターン １５…Ａｌ2 Ｏ3 膜1, 9 and 10 ... Temperature correction member 2 ... Si substrate 3 ... SiC (X-ray transparent film) 4 ... Quartz reinforcement frame 5 ... Sputter target 6 ... Mask substrate 7 ... Temperature control system 8 ... Vacuum chamber 11 ... Al 2 O 3 Film 12 ... W-Re film (X-ray absorber film) 13 ... Cr film 14 ... Electron beam resist pattern 15 ... Al 2 O 3 film
Claims (6)
工程と、 前記マスク支持体の裏面の所定の領域をエッチング除去
してウインドウ領域を形成する工程と、 前記Ｘ線透過膜上にＸ線吸収体膜を形成する工程とを具
備し、 前記Ｘ線吸収体膜を形成する工程は、前記Ｘ線透過膜の
裏面に形成されたウインドウ領域に離間・近接して配置
された温度補正部材により、このＸ線透過膜の温度を補
正しつつ行なわれることを特徴とするＸ線マスクの製造
方法。1. A step of forming an X-ray transparent film on a mask support, a step of forming a window region by etching away a predetermined region on the back surface of the mask support, and a step of forming a window region on the X-ray transparent film. And a step of forming the X-ray absorber film, wherein the step of forming the X-ray absorber film includes temperature correction in which the window region formed on the back surface of the X-ray transmissive film is spaced and close to the window region. A method for manufacturing an X-ray mask, which is performed while correcting the temperature of the X-ray transparent film by a member.
温度分布を低減するような温度勾配を設定する請求項１
に記載のＸ線マスクの製造方法。2. The temperature correction member is provided with a temperature gradient that reduces the temperature distribution of the X-ray transparent film.
The method for manufacturing an X-ray mask as described in 1.
の距離を、前記Ｘ透過膜の温度分布を低減するように制
御する請求項１に記載のＸ線マスクの製造方法。3. The method of manufacturing an X-ray mask according to claim 1, wherein the distance of the temperature correction member from the X-ray transmissive film is controlled so as to reduce the temperature distribution of the X-transmissive film.
の所定の領域にウインドウ領域が設けられたＸ線透過膜
の表面にＸ線吸収体膜を形成する成膜装置であり、 前記Ｘ線透過膜の温度を制御するための温度補正部材
が、前記Ｘ線透過膜の裏面に形成されたウインドウ領域
に離間・近接して配置されていることを特徴とするＸ線
吸収体成膜装置。4. A film forming apparatus for forming an X-ray absorber film on the surface of an X-ray transparent film, which is supported by a mask support and has a window region provided in a predetermined region on the back surface thereof. An X-ray absorber film-forming apparatus, wherein a temperature correction member for controlling the temperature of the film is arranged in the window region formed on the back surface of the X-ray transmission film so as to be spaced apart and close to the window region.
距離が、前記ウインドウ領域の中央部と端部とで異な
り、ウインドウ領域の端部における距離が中央部におけ
る距離より小さい請求項４に記載のＸ線吸収体成膜装
置。5. The distance between the temperature correction member and the X-ray transparent film is different between the center and the end of the window region, and the distance at the end of the window region is smaller than the distance at the center. The X-ray absorber film forming apparatus according to item 1.
裏面に形成されたウインドウ領域の中央部に相当する領
域に貫通穴が設けられている請求項４に記載のＸ線吸収
体成膜装置。6. The X-ray absorber film formation according to claim 4, wherein the temperature correction member is provided with a through hole in a region corresponding to a central portion of a window region formed on the back surface of the X-ray mask. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10698596A JPH09293665A (en) | 1996-04-26 | 1996-04-26 | Manufacture of x-ray mask and manufacturing device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10698596A JPH09293665A (en) | 1996-04-26 | 1996-04-26 | Manufacture of x-ray mask and manufacturing device thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09293665A true JPH09293665A (en) | 1997-11-11 |
Family
ID=14447561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10698596A Pending JPH09293665A (en) | 1996-04-26 | 1996-04-26 | Manufacture of x-ray mask and manufacturing device thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09293665A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100312088B1 (en) * | 1998-05-22 | 2001-11-03 | 가네코 히사시 | X-ray mask and method of fabricating the same |
| US6529263B2 (en) | 1998-09-04 | 2003-03-04 | Canon Kabushiki Kaisha | Position detection apparatus having a plurality of detection sections, and exposure apparatus |
-
1996
- 1996-04-26 JP JP10698596A patent/JPH09293665A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100312088B1 (en) * | 1998-05-22 | 2001-11-03 | 가네코 히사시 | X-ray mask and method of fabricating the same |
| US6529263B2 (en) | 1998-09-04 | 2003-03-04 | Canon Kabushiki Kaisha | Position detection apparatus having a plurality of detection sections, and exposure apparatus |
| US7072023B2 (en) | 1998-09-04 | 2006-07-04 | Canon Kabushiki Kaisha | Position detection apparatus having a plurality of detection sections, and exposure apparatus |
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