JPH09277448A - Connection of plastic laminated paper - Google Patents
Connection of plastic laminated paperInfo
- Publication number
- JPH09277448A JPH09277448A JP9287896A JP9287896A JPH09277448A JP H09277448 A JPH09277448 A JP H09277448A JP 9287896 A JP9287896 A JP 9287896A JP 9287896 A JP9287896 A JP 9287896A JP H09277448 A JPH09277448 A JP H09277448A
- Authority
- JP
- Japan
- Prior art keywords
- paper
- plastic laminated
- laminated paper
- silane
- plastic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電力ケーブルであ
るＯＦ（油入り）ケーブル用の絶縁紙等として使用する
に好適なプラスチックラミネート紙の接続方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for connecting plastic laminated paper suitable for use as insulating paper for OF (oil-filled) cables which are power cables.
【０００２】[0002]
【従来の技術】ＯＦケーブルの製造工程において、紙の
裁断、紙巻き工程で、紙の接続（つなぎ合わせ）のため
の接着作業が必ず行われる。クラフト紙の接続用接着剤
としては、誘電特性に悪影響を与えにくいでんぷん糊
が、従来から用いられている。昨今、さらに高性能を有
するプラスチックラミネート紙がＯＦケーブル用の絶縁
紙として用いられるようになった。このようなプラスチ
ックラミネート紙とは、ポリプロピレン等のプラスチッ
クフィルムの両面にクラフト紙を貼り合わせたものであ
る。2. Description of the Related Art In the process of manufacturing an OF cable, a bonding operation for connecting (connecting) the paper is always performed in the paper cutting and paper winding processes. As the adhesive for connecting kraft paper, starch paste, which does not adversely affect the dielectric properties, has been used conventionally. Recently, plastic laminated paper having higher performance has been used as insulating paper for OF cables. Such plastic laminated paper is a plastic film such as polypropylene with kraft paper attached to both sides.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、プラス
チックラミネート紙のポリプロピレン層が、つなぎ合わ
せ接着部の水分の乾燥を妨げるので、でんぶん糊では十
分な接着強度が得られにくい。そのため、プラスチック
ラミネート紙同士の接続には、でんぶん糊よりも接着強
度が大きい合成糊を用いているが、誘電特性（ｔａｎ
δ）への影響は、でんぷん糊より大きく、また、合成糊
中の溶媒の乾燥除去に時間を要したり、合成糊の塗布量
の変動或いは溶剤の乾燥程度により、接続部の接着強度
が低下しやすいなどの問題があった。However, since the polypropylene layer of the plastic laminated paper impedes the drying of the moisture in the jointed joints, it is difficult to obtain sufficient adhesive strength with starch paste. For this reason, synthetic glue, which has greater adhesive strength than starch paste, is used to connect plastic laminated paper to each other.
The effect on δ) is greater than that of starch paste, and it takes longer to dry and remove the solvent in the synthetic paste, and the adhesive strength of the joint decreases due to fluctuations in the amount of synthetic paste applied or the degree of solvent drying. There was a problem that it was easy to do.
【０００４】本発明は前記事情に鑑みてなされたもの
で、接続作業性に優れるとともに、接着強度と誘電特性
とに優れた接続品を与える接続方法を提供することを課
題とする。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a connection method which provides a connection product having excellent connection workability as well as excellent adhesive strength and dielectric properties.
【０００５】[0005]
【課題を解決するための手段】本発明のプラスチックラ
ミネート紙の接続方法は、プラスチックラミネート紙と
プラスチックラミネート紙とを、シラングラフトポリオ
レフィンを用いて接続することを特徴とする。また、プ
ラスチックラミネート紙とプラスチックラミネート紙と
を、シラングラフトポリオレフィンを含むフィルムを用
いて接続することが好ましい。The method for connecting plastic laminated paper of the present invention is characterized in that the plastic laminated paper and the plastic laminated paper are connected using a silane-grafted polyolefin. Further, it is preferable to connect the plastic laminated paper and the plastic laminated paper by using a film containing a silane-grafted polyolefin.
【０００６】[0006]
【発明の実施の形態】図１は本発明の方法を適用して得
られたプラスチックラミネート紙の接続品を示す斜視図
であって、１はプラスチックラミネート紙であり、２は
プラスチックラミネート紙１とプラスチックラミネート
紙１とを接続するための、シラングラフトポリオレフィ
ンを含む接着層である。1 is a perspective view showing a connected article of plastic laminated paper obtained by applying the method of the present invention, in which 1 is plastic laminated paper and 2 is plastic laminated paper 1. It is an adhesive layer containing a silane-grafted polyolefin for connecting to the plastic laminated paper 1.
【０００７】図１に示す接続品を得るための本発明の一
方法は、プラスチックラミネート紙の端部とプラスチッ
クラミネート紙の端部との重ね合わせ部の間に、シラン
グラフトポリオレフィンを含むフィルムを位置せしめ、
次いで、熱盤などにより、該重ね合わせ部を熱圧着し冷
却する方法である。重ね合わせ部の長さは任意である
が、５〜１０ｍｍが好ましい。One method of the present invention for obtaining the connected article shown in FIG. 1 is to position a film containing silane-grafted polyolefin between the ends of the plastic-laminated paper and the edges of the plastic-laminated paper. Sir,
Then, the superposed portion is thermocompression-bonded by a hot platen or the like and cooled. The length of the overlapping portion is arbitrary, but is preferably 5 to 10 mm.
【０００８】プラスチックラミネート紙としては、ポリ
プロピレン等のプラスチックフィルムの両面にクラフト
紙等のセルロース紙を貼り合わせたラミネート紙が挙げ
られる。具体的には、クラフト紙／ポリプロピレン／ク
ラフト紙の構成のプラスチックラミネート紙が挙げられ
る。これらのプラスチックラミネート紙は誘電特性に優
れ、低損失である。Examples of the plastic laminated paper include laminated paper in which cellulose paper such as kraft paper is laminated on both sides of a plastic film such as polypropylene. Specific examples thereof include plastic laminated paper having a structure of kraft paper / polypropylene / kraft paper. These plastic laminated papers have excellent dielectric properties and low loss.
【０００９】プラスチックラミネート紙の接着剤であっ
て、接着層２を構成するシラングラフトポリオレフィン
とは、シラン化合物をポリオレフィンにグラフト重合せ
しめた重合体である。 珪素の含有率が、０．１から５
重量％のシラングラフトポリオレフィンを用いることが
好ましい。前記シラン化合物としては、Ｘ−Ｓｉ（Ｏ
Ｒ’）3（ここでＸはビニル基等の有機官能基、ＯＲ’
はアルコキシ基でメトキシ基、エトキシ基など）等が挙
げられる。前記ポリオレフィンとしては、ポリエチレ
ン、ポリプロピレン等が挙げられる。接着層２はシラン
グラフトポリオレフィンを必須成分として含むが、さら
に他の添加剤、例えば酸化防止剤、滑剤、着色剤などを
含んでもよい。The silane-grafted polyolefin constituting the adhesive layer 2, which is an adhesive for plastic laminated paper, is a polymer obtained by graft-polymerizing a silane compound onto the polyolefin. Silicon content is 0.1 to 5
It is preferred to use a weight percent of silane-grafted polyolefin. As the silane compound, X-Si (O
R ') 3 (where X is an organic functional group such as vinyl group, OR'
Is an alkoxy group, and examples thereof include a methoxy group and an ethoxy group. Examples of the polyolefin include polyethylene and polypropylene. The adhesive layer 2 contains a silane-grafted polyolefin as an essential component, but may further contain other additives such as an antioxidant, a lubricant and a colorant.
【００１０】シラングラフトポリオレフィンは、例え
ば、ポリエチレン等のポリオレフィンに、ビニル基を有
するシラン化合物と過酸化物（パーオキサイド）とを配
合し、加熱して混練する方法などの方法により製造でき
る。The silane-grafted polyolefin can be produced, for example, by blending a polyolefin such as polyethylene with a vinyl group-containing silane compound and a peroxide, and heating and kneading the mixture.
【００１１】プラスチックラミネート紙がポリプロピレ
ンフィルムの両面にクラフト紙を貼り合わせた構成のラ
ミネート紙（クラフト紙／ポリプロピレン／クラフト
紙）の場合は、シラングラフトポリオレフィンとして
は、シラングラフトポリエチレン、特にシラングラフト
高密度ポリエチレンが好ましい。シラングラフト高密度
ポリエチレン等はポリエチレンがベースポリマーである
ので、ポリプロピレンよりも熱軟化し易いので、プラス
チックラミネート紙中のポリプロピレンを、接着時に熱
変形させない。また、高密度ポリエチレンがベースポリ
マーであると、ポリマー自身の強度が大きいため、接着
強度が大である。When the plastic laminated paper is a laminated paper (kraft paper / polypropylene / kraft paper) in which kraft paper is laminated on both sides of a polypropylene film, the silane-grafted polyolefin is silane-grafted polyethylene, especially silane-grafted high density. Polyethylene is preferred. Since silane-grafted high-density polyethylene and the like have polyethylene as a base polymer, they are more easily softened by heat than polypropylene, so that polypropylene in plastic-laminated paper is not thermally deformed during bonding. Further, when the high-density polyethylene is the base polymer, the strength of the polymer itself is high, so that the adhesive strength is high.
【００１２】シラングラフトポリオレフィンは、珪素元
素を含むので、通常のポリオレフィンに比較して、プラ
スチックラミネート紙の表面を構成するセルロースに対
する接着強度に優れる。さらに、シラングラフトポリオ
レフィンは、無溶剤のホットメルト型の接着剤であっ
て、加熱により熱軟化して、プラスチックラミネート紙
同士を短時間に接着せしめるので接続作業性に優れる。
シラングラフトポリオレフィンとして、厚み２０〜１５
０μのフィルム形状のものを用いると、熱圧着時間が短
くてすむ。Since the silane-grafted polyolefin contains silicon element, it is superior in adhesive strength to cellulose constituting the surface of the plastic laminated paper, as compared with ordinary polyolefin. Further, the silane-grafted polyolefin is a solvent-free hot-melt type adhesive, which is heat-softened by heating to bond the plastic laminated papers to each other in a short time, and thus has excellent connection workability.
As silane-grafted polyolefin, thickness 20 to 15
When a film having a thickness of 0 μ is used, the thermocompression bonding time can be shortened.
【００１３】本発明の方法を適用することにより得られ
た、プラスチックラミネート紙同士の接続品は、ＯＦケ
ーブルなどの絶縁紙として好適である。極性基を含む接
着層２の長さが短いので、接続品を絶縁紙として使用し
たＯＦケーブルは低損失である。しかも、接続品の接続
部の接着強度は大きいので、絶縁紙としての紙巻き作業
性にも優れる。The connected product of plastic laminated papers obtained by applying the method of the present invention is suitable as insulating paper for OF cables and the like. Since the length of the adhesive layer 2 containing a polar group is short, the OF cable using the connected product as insulating paper has low loss. Moreover, since the connection portion of the connected product has a high adhesive strength, the workability of the insulating paper as a paper roll is excellent.
【００１４】[0014]
（実施例１）以下、本発明を詳しく説明する。次の方法
により、図１に示す接続品を製造した。プラスチックラ
ミネート紙とプラスチックラミネート紙とを、シラング
ラフト高密度ポリエチレンのフィルムを介して重ね合わ
せた。プラスチックラミネート紙として、ポリプロピレ
ンフィルムの両面にクラフト紙を貼り合わせた構成のラ
ミネート紙を準備した。プラスチックラミネート紙のポ
リプロピレンの重量分率は５５％であり、ＰＰラミネー
ト紙の厚みは１７０μであった。一方、接着剤であり、
接着層２の構成材でもあるシラングラフト高密度ポリエ
チレンのフィルム（厚み１００μ）を準備した。シラン
グラフト高密度ポリエチレンとして、三菱化学社製の、
商品名「リンクロンＨＭ６００Ａ」を用いた。Example 1 The present invention will be described in detail below. The connected product shown in FIG. 1 was manufactured by the following method. Plastic laminated paper and plastic laminated paper were laminated via a film of silane-grafted high density polyethylene. As a plastic laminated paper, a laminated paper having a structure in which kraft paper was attached to both sides of a polypropylene film was prepared. The polypropylene weight fraction of the plastic laminated paper was 55% and the thickness of the PP laminated paper was 170μ. On the other hand, it is an adhesive,
A silane-grafted high-density polyethylene film (100 μm thick), which is also a constituent material of the adhesive layer 2, was prepared. As silane-grafted high-density polyethylene, manufactured by Mitsubishi Chemical Corporation,
The product name "Linkron HM600A" was used.
【００１５】次いで、重ね合わせ部の外面を熱盤によ
り、１４０゜Ｃで１分間熱圧着し、次いで冷却すること
により、プラスチックラミネート紙とプラスチックラミ
ネート紙とを、シラングラフト高密度ポリエチレンを用
いて接続した。得られた接続品は、図１に示すように、
プラスチックラミネート紙１とプラスチックラミネート
紙１とを、シラングラフト高密度ポリエチレンからなる
接着層２を介して接着してなる接続品であった。Then, the outer surface of the superposed portion is thermocompression-bonded with a hot platen at 140 ° C. for 1 minute, and then cooled to connect the plastic laminated paper and the plastic laminated paper using silane-grafted high density polyethylene. did. The resulting connected product, as shown in FIG.
It was a connection product obtained by adhering the plastic laminated paper 1 and the plastic laminated paper 1 via the adhesive layer 2 made of silane-grafted high-density polyethylene.
【００１６】この接続品を裁断した後、接着強度とｔａ
ｎδを測定した。測定結果を表１に示す。接着強度は、
１０本の測定試料の接続部（接着層２）を、スリッター
を用いて裁断した場合に、接続部が剥離した測定試料の
本数を示した。ｔａｎδは、アルキルベンゼン油を含浸
し、８０゜Ｃ、２０ＫＶ／ｍｍで測定した。After cutting this connection product, the adhesive strength and ta
nδ was measured. Table 1 shows the measurement results. The adhesive strength is
The number of measurement samples from which the connection portions were peeled off when the connection portions (adhesive layer 2) of the 10 measurement samples were cut using a slitter was shown. Tan δ was measured at 80 ° C. and 20 KV / mm by impregnating alkylbenzene oil.
【００１７】（比較例１〜２）比較のため、合成糊（ア
クリル系）、でんぷん糊を、前記プラスチックラミネー
ト紙１の端部にそれぞれ塗布し、重ね合わせ、圧着し、
１５０゜Ｃで５分間乾燥することにより、合成糊を接着
剤とする接続品（比較例１）とでんぷん糊を接着剤とす
る接続品（比較例２）とを得た。これらについて、実施
例１と同様に、接着強度とｔａｎδを測定した。測定結
果を表１に示す。(Comparative Examples 1 and 2) For comparison, synthetic glue (acrylic type) and starch paste were applied to the end portions of the plastic laminated paper 1, respectively, and they were superposed and pressure-bonded.
By drying at 150 ° C. for 5 minutes, a connection product using synthetic glue as an adhesive (Comparative Example 1) and a connection product using starch paste as an adhesive (Comparative Example 2) were obtained. For these, the adhesive strength and tan δ were measured in the same manner as in Example 1. Table 1 shows the measurement results.
【００１８】[0018]
【表１】 [Table 1]
【００１９】表１より、シラングラフト高密度ポリエチ
レン（ポリオレフィン）を接着層２とする実施例１は、
比較例１〜２に比して、接着強度に優れている。しか
も、実施例１は、比較例１〜２に比して、ｔａｎδが小
さく、接着部を有さない、比較例３のプラスチックラミ
ネート紙自体と、ほぼ同じｔａｎδを示した。則ち、実
施例１は誘電損失に優れていた。From Table 1, Example 1 using silane-grafted high density polyethylene (polyolefin) as the adhesive layer 2 is
The adhesive strength is excellent as compared with Comparative Examples 1 and 2. Moreover, Example 1 showed a tan δ that was substantially the same as that of the plastic laminated paper itself of Comparative Example 3 having a smaller tan δ and no adhesive portion as compared with Comparative Examples 1 and 2. In other words, Example 1 was excellent in dielectric loss.
【００２０】[0020]
【発明の効果】以上説明したように本発明の接続方法は
接続作業性に優れるとともに、接着強度に優れた接続品
を提供する。該接続品は誘電特性に優れているので、電
力ケーブル用の絶縁紙として使用するに好適である。As described above, the connection method of the present invention provides a connection product having excellent connection workability and adhesive strength. Since the connected product has excellent dielectric properties, it is suitable for use as insulating paper for power cables.
【図１】 本発明の方法を適用して得られたプラスチッ
クラミネート紙の接続品を示す斜視図である。FIG. 1 is a perspective view showing a connected product of plastic laminated paper obtained by applying the method of the present invention.
１・・プラスチックラミネート紙、２・・接着層 1 ... Plastic laminated paper, 2 ... Adhesive layer
Claims (2)
クラミネート紙とを、シラングラフトポリオレフィンを
用いて接続することを特徴とするプラスチックラミネー
ト紙の接続方法。1. A method for connecting plastic laminated paper, characterized in that the plastic laminated paper and the plastic laminated paper are connected using a silane-grafted polyolefin.
クラミネート紙とを、シラングラフトポリオレフィンを
含むフィルムを用いて接続することを特徴とするプラス
チックラミネート紙の接続方法。2. A method for connecting plastic laminated paper, characterized in that the plastic laminated paper and the plastic laminated paper are connected using a film containing a silane-grafted polyolefin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9287896A JPH09277448A (en) | 1996-04-15 | 1996-04-15 | Connection of plastic laminated paper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9287896A JPH09277448A (en) | 1996-04-15 | 1996-04-15 | Connection of plastic laminated paper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09277448A true JPH09277448A (en) | 1997-10-28 |
Family
ID=14066715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9287896A Pending JPH09277448A (en) | 1996-04-15 | 1996-04-15 | Connection of plastic laminated paper |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09277448A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
| US6255198B1 (en) | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
| US6261929B1 (en) | 2000-02-24 | 2001-07-17 | North Carolina State University | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
| US6265289B1 (en) | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
| US6376339B2 (en) | 1998-11-24 | 2002-04-23 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated thereby |
| US6380108B1 (en) | 1999-12-21 | 2002-04-30 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
| US6403451B1 (en) | 2000-02-09 | 2002-06-11 | Noerh Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
| US6489221B2 (en) | 1999-11-17 | 2002-12-03 | North Carolina State University | High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
| US6582986B2 (en) | 1999-10-14 | 2003-06-24 | Cree, Inc. | Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures |
| US6608327B1 (en) | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
-
1996
- 1996-04-15 JP JP9287896A patent/JPH09277448A/en active Pending
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6570192B1 (en) | 1998-02-27 | 2003-05-27 | North Carolina State University | Gallium nitride semiconductor structures including lateral gallium nitride layers |
| US6608327B1 (en) | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
| US6602763B2 (en) | 1998-02-27 | 2003-08-05 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth |
| US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
| US7195993B2 (en) | 1998-06-10 | 2007-03-27 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches |
| US6265289B1 (en) | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
| US6897483B2 (en) | 1998-06-10 | 2005-05-24 | North Carolina State University | Second gallium nitride layers that extend into trenches in first gallium nitride layers |
| US6376339B2 (en) | 1998-11-24 | 2002-04-23 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated thereby |
| US6602764B2 (en) | 1998-11-24 | 2003-08-05 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers |
| US6255198B1 (en) | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
| US6812053B1 (en) | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
| US6582986B2 (en) | 1999-10-14 | 2003-06-24 | Cree, Inc. | Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures |
| US6955977B2 (en) | 1999-10-14 | 2005-10-18 | Cree, Inc. | Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures |
| US6764932B2 (en) | 1999-10-14 | 2004-07-20 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures |
| US6803602B2 (en) | 1999-10-14 | 2004-10-12 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
| US6489221B2 (en) | 1999-11-17 | 2002-12-03 | North Carolina State University | High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
| US6521514B1 (en) | 1999-11-17 | 2003-02-18 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
| US6586778B2 (en) | 1999-12-21 | 2003-07-01 | North Carolina State University | Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts |
| US6380108B1 (en) | 1999-12-21 | 2002-04-30 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
| US6621148B2 (en) | 2000-02-09 | 2003-09-16 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby |
| US6864160B2 (en) | 2000-02-09 | 2005-03-08 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
| US6403451B1 (en) | 2000-02-09 | 2002-06-11 | Noerh Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
| US7095062B2 (en) | 2000-02-09 | 2006-08-22 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby |
| US6486042B2 (en) | 2000-02-24 | 2002-11-26 | North Carolina State University | Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby |
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