JPH09264792A - Non-contact temperature sensor - Google Patents
Non-contact temperature sensorInfo
- Publication number
- JPH09264792A JPH09264792A JP8073814A JP7381496A JPH09264792A JP H09264792 A JPH09264792 A JP H09264792A JP 8073814 A JP8073814 A JP 8073814A JP 7381496 A JP7381496 A JP 7381496A JP H09264792 A JPH09264792 A JP H09264792A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- temperature
- substrate
- temperature sensor
- drift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は非接触温度センサに
関し、特に食品加熱，人体検知等を行う装置に使用され
る非接触温度センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-contact temperature sensor, and more particularly to a non-contact temperature sensor used in a device for heating food, detecting a human body and the like.
【０００２】[0002]
【従来の技術】図１０は非接触温度センサの外観構成図
であり、非接触温度センサは筐体１内にセンサ基板２が
設置されてなる構造からなる。2. Description of the Related Art FIG. 10 is an external view of a non-contact temperature sensor. The non-contact temperature sensor has a structure in which a sensor substrate 2 is installed in a housing 1.
【０００３】以下、図１１及び図１２にしたがって、従
来の非接触温度センサについて説明する。図１１は従来
の非接触温度センサの回路構成図であり、図１２は従来
の非接触温度センサの要部断面図である。A conventional non-contact temperature sensor will be described below with reference to FIGS. 11 and 12. FIG. 11 is a circuit configuration diagram of a conventional non-contact temperature sensor, and FIG. 12 is a cross-sectional view of essential parts of the conventional non-contact temperature sensor.
【０００４】従来の非接触温度センサは、センサ基板２
表面の温度検出用サーミスタ３が筐体１開口部の方向に
向き、センサ基板２裏面の検出側温度補償用サーミスタ
４が筐体１内部に向いているように設置されたもので、
被検知物から出た赤外線を温度検出用サーミスタ３で受
光することにより該温度検出用サーミスタ３と前記検出
側温度補償用サーミスタ４との間に僅かな温度差が生じ
る。この温度差が被検出物からの赤外線８の量に比例し
て大きくなる。図１１中、５，６は基準電圧発生用の抵
抗であり、該抵抗５，６と前記サーミスタ３，４とによ
ってブリッジ回路を構成している。The conventional non-contact temperature sensor has a sensor substrate 2
The temperature detecting thermistor 3 on the front surface faces the opening of the housing 1, and the detection side temperature compensating thermistor 4 on the rear surface of the sensor substrate 2 faces the inside of the housing 1.
When the temperature detecting thermistor 3 receives the infrared rays emitted from the object to be detected, a slight temperature difference occurs between the temperature detecting thermistor 3 and the detection side temperature compensating thermistor 4. This temperature difference increases in proportion to the amount of infrared rays 8 from the detected object. In FIG. 11, reference numerals 5 and 6 are resistors for generating a reference voltage, and the resistors 5 and 6 and the thermistors 3 and 4 form a bridge circuit.
【０００５】従って、温度検出用サーミスタ３と検出側
温度補償用サーミスタ４によって分圧された出力と、赤
外線８がない場合に出力電圧差がなくなるように設定さ
れた基準電圧出力とを、図１１に示す差動増幅回路７に
入力し増幅させ、出力をワンチップマイクロコンピュー
タ等の演算処理装置に入力する。Therefore, the output divided by the temperature detecting thermistor 3 and the detection side temperature compensating thermistor 4 and the reference voltage output set so as to eliminate the output voltage difference in the absence of the infrared rays 8 are shown in FIG. Is input to the differential amplifier circuit 7 shown in FIG. 1 to be amplified, and the output is input to an arithmetic processing unit such as a one-chip microcomputer.
【０００６】上記非接触温度センサとしては、例えば特
開平７−１８１０８３号公報に記載の輻射熱センサがあ
げられる。As the non-contact temperature sensor, there is, for example, a radiant heat sensor described in JP-A-7-181083.
【０００７】また、低雑音化のため、ブリッジ回路にサ
ーミスタを４個使用した例が、特開平６−１６０１８５
号公報に記載の赤外線検出素子に開示されている。An example in which four thermistors are used in a bridge circuit for reducing noise is disclosed in Japanese Patent Laid-Open No. 160185/1994.
It is disclosed in the infrared detecting element described in the publication.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、上述の
従来の非接触温度センサでは、被検出物の温度検出を定
常的な環境条件でしか行わないことを想定しているの
で、マイクロ波加熱やヒータ加熱を行う場合のように、
環境条件が極端に変化する場合には、筐体１内のセンサ
基板２の表面側と裏面側においても環境条件の変化が生
じる。センサ基板２の表面側と裏面側に温度差が発生す
ると、検出温度に環境温度差による基準電圧の値の変化
分の温度ドリフトが発生するため、正確に被検出物の温
度測定を行うことが困難になるという問題が発生する。However, in the above-mentioned conventional non-contact temperature sensor, since it is assumed that the temperature of the object to be detected is detected only under the steady environmental conditions, the microwave heating and the heater are performed. As with heating,
When the environmental conditions change drastically, the environmental conditions also change on the front surface side and the back surface side of the sensor substrate 2 in the housing 1. When a temperature difference occurs between the front surface side and the back surface side of the sensor substrate 2, a temperature drift corresponding to a change in the value of the reference voltage due to the environmental temperature difference occurs in the detected temperature, so that the temperature of the detected object can be accurately measured. The problem of becoming difficult arises.
【０００９】ここで、従来の非接触温度検知センサにお
ける筐体１内のセンサ基板２により仕切られた筐体１内
（センサ基板２の裏面側）の環境温度をＴａ、外側（セ
ンサ基板２の表面側）の環境温度Ｔａ＋ΔＴ１とする
と、サーミスタ定数の値を理想的な場合として、Ｂ定数
の大きさをＢ、２５℃における抵抗値をＲとして、また
赤外線８の受光による温度差をΔＴ２とした場合、各サ
ーミスタ３，４の抵抗値を計算すると、温度検出用サー
ミスタ３は、Here, the ambient temperature inside the housing 1 (the back surface side of the sensor board 2) partitioned by the sensor board 2 inside the housing 1 in the conventional non-contact temperature detection sensor is Ta, and the outside (the sensor board 2 is outside). Assuming that the ambient temperature on the surface side) is Ta + ΔT1, the value of the thermistor constant is ideal, the magnitude of the B constant is B, the resistance value at 25 ° C. is R, and the temperature difference due to the reception of the infrared rays 8 is ΔT2. In this case, when the resistance values of the thermistors 3 and 4 are calculated, the temperature detecting thermistor 3 becomes
【００１０】[0010]
【数１】 [Equation 1]
【００１１】検出側温度補償用サーミスタ４は、The detection side temperature compensating thermistor 4 is
【００１２】[0012]
【数２】 [Equation 2]
【００１３】従って出力電圧は、電源電圧をＶとすればTherefore, if the power supply voltage is V, the output voltage is
【００１４】[0014]
【数３】 (Equation 3)
【００１５】となる。## EQU1 ##
【００１６】いま、電源電圧を５Ｖで、Ｔａを２５℃，
サーミスタのＢ定数を４０００，抵抗値を５０ｋΩとし
ΔＴ２が１℃当たり０．０００６℃とした場合の、環境
温度変化量ΔＴ１に対するセンサ感度（μＶ／℃）とセ
ンサ感度ドリフト（μＶ／℃）の変化を図１３に示す。
図１３からも分かるように環境温度に対する出力変化が
大きくなるため、測定温度に対する環境変化による温度
ドリフトの影響が大きくなる。Now, the power supply voltage is 5 V, Ta is 25 ° C.,
Changes in sensor sensitivity (μV / ° C) and sensor sensitivity drift (μV / ° C) with respect to the environmental temperature change amount ΔT1 when the thermistor B constant is 4000, the resistance value is 50 kΩ, and ΔT2 is 0.0006 ° C per 1 ° C. Is shown in FIG.
As can be seen from FIG. 13, since the output change with respect to the environmental temperature is large, the influence of the temperature drift due to the environmental change with respect to the measured temperature is large.
【００１７】本発明は、上記課題に鑑み、温度ドリフト
補償用サーミスタ及びドリフト補償側温度補償用サーミ
スタを設けることにより、センサ基板の表面側と裏面側
との環境条件の変化による環境温度の変化を打ち消すこ
とが可能な非接触温度センサの提供を目的とするもので
ある。In view of the above problems, the present invention provides a temperature drift compensating thermistor and a drift compensating side temperature compensating thermistor to prevent a change in environmental temperature due to a change in environmental conditions on the front surface side and the back surface side of a sensor substrate. An object of the present invention is to provide a non-contact temperature sensor that can be canceled.
【００１８】[0018]
【課題を解決するための手段】本発明よりなる非接触温
度センサにおいて、請求項１記載の発明は、基板表面に
配置され被検出物からの赤外線を受光する温度検出用サ
ーミスタと、基板裏面に配置された検出側温度補償用サ
ーミスタと、２つの基準電圧発生手段とからなるブリッ
ジ回路で構成された非接触温度センサにおいて、前記基
準電圧発生手段が、基板表面に配置され遮光された温度
ドリフト補償用サーミスタと、基板裏面に配置されたド
リフト補償側温度補償用サーミスタとからなることを特
徴とするものである。In the non-contact temperature sensor according to the present invention, the invention according to claim 1 has a temperature detecting thermistor arranged on the front surface of the substrate for receiving infrared rays from an object to be detected, and a back surface of the substrate. In a non-contact temperature sensor comprising a bridge circuit composed of a detection side temperature compensating thermistor and two reference voltage generating means, the reference voltage generating means is arranged on the substrate surface and is shielded from temperature drift. And a drift compensation side temperature compensating thermistor arranged on the back surface of the substrate.
【００１９】また、請求項２記載の発明は、前記基板表
面にスペーサを介して配置され前記温度ドリフト補償用
サーミスタを覆う赤外線反射テープを設けたことを特徴
とするものである。The invention according to claim 2 is characterized in that an infrared reflection tape is provided on the surface of the substrate via a spacer to cover the thermistor for temperature drift compensation.
【００２０】さらに、請求項３記載の発明は、前記基板
表面の上方に前記温度検出用サーミスタにのみ焦点を結
ぶ集光手段を設けたことを特徴とするものである。Further, the invention according to claim 3 is characterized in that a condensing means for focusing only on the temperature detecting thermistor is provided above the substrate surface.
【００２１】加えて、請求項４記載の発明は、前記各サ
ーミスタのＢ定数の大きさが、温度検出用サーミスタ＞
検出側温度補償用サーミスタ、温度ドリフト補償用サー
ミスタ＞ドリフト補償側温度補償用サーミスタとなるよ
う設定したことを特徴とするものである。In addition, according to the invention of claim 4, the B constant of each of the thermistors is larger than the temperature detecting thermistor.
The detection side temperature compensating thermistor and the temperature drift compensating thermistor> the drift compensating side temperature compensating thermistor.
【００２２】加えて、請求項５記載の発明は、前記温度
検出用サーミスタの表面に赤外線吸収塗料を塗布すると
ともに、前記温度ドリフト補償用サーミスタの表面に前
記赤外線吸収塗料の熱容量と略同一の熱容量を有する赤
外線反射塗料を塗布したことを特徴とするものである。In addition, the invention according to claim 5 applies an infrared absorbing paint to the surface of the temperature detecting thermistor, and has a heat capacity substantially equal to the heat capacity of the infrared absorbing paint on the surface of the temperature drift compensating thermistor. It is characterized in that an infrared reflection paint having the above is applied.
【００２３】加えて、請求項６記載の発明は、前記基板
表面の両サーミスタの間隔と、基板裏面の両サーミスタ
の間隔とをそれぞれ略１ｍｍに設定したことを特徴とす
るものである。In addition, the invention according to claim 6 is characterized in that the distance between both thermistors on the front surface of the substrate and the distance between both thermistors on the rear surface of the substrate are set to approximately 1 mm, respectively.
【００２４】加えて、請求項７記載の発明は、前記基板
表面の両サーミスタ間及び前記基板裏面の両サーミスタ
間にそれぞれスリットを設けたことを特徴とするもので
ある。In addition, the invention according to claim 7 is characterized in that slits are provided between the thermistors on the front surface of the substrate and between the thermistors on the rear surface of the substrate.
【００２５】加えて、請求項８記載の発明は、前記スリ
ットを複数設けたことを特徴とするものである。In addition, the invention according to claim 8 is characterized in that a plurality of the slits are provided.
【００２６】加えて、請求項９記載の発明は、前記基板
のサーミスタ非搭載部分に空気の流通通路を設けたこと
を特徴とするものである。In addition, the invention according to claim 9 is characterized in that an air flow passage is provided in the non-thermistor mounted portion of the substrate.
【００２７】上記構成によれば、請求項１記載の発明
は、基準電圧発生手段が、基板表面に配置され遮光され
た温度ドリフト補償用サーミスタと、基板裏面に配置さ
れたドリフト補償側温度補償用サーミスタとからなる構
成なので、基板表面側と裏面側との環境条件の変化に応
じた基準電圧を発生させることが可能となり、該環境条
件の変化による温度変化の影響を受けることなく、精度
のよい測定ができる。According to the above structure, the invention according to claim 1 is such that the reference voltage generating means is a thermistor for temperature drift compensation arranged on the front surface of the substrate and shielded from light, and a temperature compensation for drift compensation side temperature compensation arranged on the rear surface of the substrate. Since it is composed of the thermistor, it is possible to generate the reference voltage according to the change of the environmental conditions on the front surface side and the back surface side of the substrate, and the accuracy is high without being affected by the temperature change due to the change of the environmental condition. You can measure.
【００２８】また、請求項２記載の発明は、前記基板表
面にスペーサを介して配置され前記温度ドリフト補償用
サーミスタを覆う赤外線反射テープを設けた構成なの
で、前記温度ドリフト補償用サーミスタ自身に赤外線反
射のための特殊処理を施す必要がなく、容易に赤外線反
射処理を行うことができる。According to the second aspect of the invention, since the infrared reflection tape is provided on the surface of the substrate via the spacer and covers the temperature drift compensating thermistor, the temperature drift compensating thermistor itself reflects infrared rays. Infrared reflection treatment can be easily performed without the need for special treatment for.
【００２９】さらに、請求項３記載の発明は、前記基板
表面の上方に前記温度検出用サーミスタにのみ焦点を結
ぶ集光手段を設けた構成なので、赤外線が温度ドリフト
補償用サーミスタに照射されることを防止でき、温度ド
リフト補償用サーミスタ自身に赤外線反射の特殊処理、
赤外線反射処理等を行うことなく、且つ温度ドリフト補
償用サーミスタの直接の外乱要因の影響を少なくするこ
とができる。また、温度検出用サーミスタの赤外線の受
光量を向上させることができ、高精度なセンサ制御を行
うことができる。Further, according to the third aspect of the invention, since the condensing means for focusing only on the temperature detecting thermistor is provided above the substrate surface, infrared rays are applied to the temperature drift compensating thermistor. The temperature drift compensation thermistor itself has a special treatment of infrared reflection,
It is possible to reduce the influence of a direct disturbance factor of the temperature drift compensation thermistor without performing infrared reflection processing or the like. Further, the amount of infrared rays received by the temperature detecting thermistor can be improved, and highly accurate sensor control can be performed.
【００３０】加えて、請求項４記載の発明は、前記各サ
ーミスタのＢ定数の大きさが、温度検出用サーミスタ＞
検出側温度補償用サーミスタ、温度ドリフト補償用サー
ミスタ＞ドリフト補償側温度補償用サーミスタとなるよ
う設定した構成なので、前記サーミスタにおいて必ずＢ
定数のばらつきが発生するが、Ｂ定数のばらつきによる
抵抗変化による影響を小さくすることができる。In addition, according to the invention of claim 4, the B constant of each of the thermistors is larger than the temperature detecting thermistor.
Since the detection side temperature compensating thermistor and temperature drift compensating thermistor> the drift compensating side temperature compensating thermistor, the above-mentioned thermistor must be B.
Although the constants vary, it is possible to reduce the influence of the resistance change due to the variation of the B constant.
【００３１】加えて、請求項５記載の発明は、前記温度
検出用サーミスタの表面に赤外線吸収塗料を塗布すると
ともに、前記温度ドリフト補償用サーミスタの表面に前
記赤外線吸収塗料の熱容量と略同一の熱容量を有する赤
外線反射塗料を塗布してなる構成なので、温度検出用サ
ーミスタの赤外線の受光量を向上させることができ、高
精度なセンサ制御を行うことができるとともに、温度検
出用サーミスタの熱容量と温度ドリフト補正用サーミス
タとの熱容量を等しくすることで、熱伝導の差によるセ
ンサ感度への影響を小さくすることができる。In addition, in the invention according to claim 5, the infrared absorption paint is applied to the surface of the temperature detecting thermistor, and the heat capacity of the temperature drift compensation thermistor is substantially the same as the heat capacity of the infrared absorption paint. Since it is configured by applying an infrared reflective paint with the temperature detection thermistor, it is possible to improve the amount of infrared rays received by the temperature detection thermistor, and it is possible to perform highly accurate sensor control, as well as the thermal capacity and temperature drift of the temperature detection thermistor. By making the heat capacities of the correction thermistor equal, it is possible to reduce the influence of the difference in heat conduction on the sensor sensitivity.
【００３２】加えて、請求項６記載の発明は、前記基板
表面の両サーミスタの間隔と、基板裏面の両サーミスタ
の間隔とをそれぞれ略１ｍｍに設定したので、基板を介
することにより生じる基板表面のサーミスタの並置方向
への熱伝導による熱流を防ぎ、熱流によるセンサ感度へ
の影響を小さくすることができる。In addition, according to the invention of claim 6, the distance between the thermistors on the front surface of the substrate and the distance between the thermistors on the rear surface of the substrate are set to about 1 mm, respectively. A heat flow due to heat conduction in the juxtaposed direction of the thermistors can be prevented, and the influence of the heat flow on the sensor sensitivity can be reduced.
【００３３】加えて、請求項７記載の発明は、前記基板
表面の両サーミスタ間及び前記基板裏面の両サーミスタ
間にそれぞれスリットを設けたので、該スリットにより
基板を介することにより生じる基板表面のサーミスタの
並置方向に対する熱的な結合を無くすことができ、セン
サ感度への影響をなくすことができる。In addition, according to the invention of claim 7, since slits are provided between the thermistors on the front surface of the substrate and between the thermistors on the rear surface of the substrate, respectively, the thermistors on the front surface of the substrate caused by the slits interposing the substrate. It is possible to eliminate the thermal coupling in the juxtaposed direction, and the influence on the sensor sensitivity can be eliminated.
【００３４】加えて、請求項８記載の発明は、前記スリ
ットを複数設けたので、基板の表面側と裏面側との空気
の対流を小さくし、スリットを設けたことによるセンサ
感度への影響をなくすことができる。In addition, according to the invention of claim 8, a plurality of the slits are provided. Therefore, the convection of air between the front surface side and the back surface side of the substrate is reduced, and the effect of the slits on the sensor sensitivity is reduced. It can be lost.
【００３５】加えて、請求項９記載の発明は、前記基板
のサーミスタ非搭載部分に空気の流通通路を設けたの
で、基板の表面側と裏面側との環境温度差による不必要
な熱流を削除し、センサ感度への影響をなくすことがで
きる。In addition, in the invention according to claim 9, since an air flow passage is provided in the part where the thermistor is not mounted on the substrate, unnecessary heat flow due to a difference in environmental temperature between the front surface side and the back surface side of the substrate is eliminated. However, the influence on the sensor sensitivity can be eliminated.
【００３６】[0036]
【発明の実施の形態】図１は本発明よりなる非接触温度
センサの回路構成図である。1 is a circuit diagram of a non-contact temperature sensor according to the present invention.
【００３７】従来の非接触温度センサでは、発明が解決
しようとする課題で説明したように、センサ基板２表面
側と裏面側とで環境条件の変化が生じた場合に被検知物
の検検出温度に温度ドリフトが発生するため、本発明は
図１１に示す従来のブリッジ回路における基準電圧発生
用の直列抵抗５，６を、図１に示す温度ドリフト補正用
サーミスタ１１とドリフト補正側温度補償用サーミスタ
１２に変更してなる構成である。なお、図１において、
従来例と同一の構成については同一の符号を称す。In the conventional non-contact temperature sensor, as described in the problem to be solved by the invention, when the environmental condition changes between the front surface side and the back surface side of the sensor substrate 2, the detected temperature of the detected object is detected. Therefore, the present invention uses the series resistors 5 and 6 for generating the reference voltage in the conventional bridge circuit shown in FIG. 11, the temperature drift correction thermistor 11 and the drift correction side temperature compensation thermistor shown in FIG. The configuration is changed to 12. In FIG. 1,
The same components as those in the conventional example are designated by the same reference numerals.
【００３８】以下、本発明よりなる非接触温度センサの
構造を具体的に説明する。The structure of the non-contact temperature sensor according to the present invention will be specifically described below.
【００３９】図２は本発明の第一実施の形態よりなる非
接触温度センサの構造を示す断面図であり、各サーミス
タの設置位置は図に示すように、表面に赤外線吸収塗料
が塗布された赤外線検知サーミスタ３と表面に赤外線反
射マスク１４が形成された温度ドリフト補正用サーミス
タ１１とを被検出物からの赤外線１３を受けることがで
きるセンサ基板２表面に間隔をあけて設置する。そし
て、前記サーミスタ３，１１のセンサ基板２を挟んでセ
ンサ基板２裏面の同じ位置に検出側温度補償用サーミス
タ４，ドリフト補償側温度補償用サーミスタ１２をそれ
ぞれ設置する。FIG. 2 is a sectional view showing the structure of the non-contact temperature sensor according to the first embodiment of the present invention. As shown in the figure, the installation position of each thermistor is coated with infrared absorbing paint. The infrared detection thermistor 3 and the temperature drift correction thermistor 11 having an infrared reflection mask 14 formed on the surface thereof are installed on the surface of the sensor substrate 2 capable of receiving the infrared rays 13 from the object to be detected with a gap. Then, the detection side temperature compensating thermistor 4 and the drift compensation side temperature compensating thermistor 12 are installed at the same position on the back surface of the sensor substrate 2 with the thermistors 3 and 11 sandwiching the sensor substrate 2.
【００４０】ここで、非接触温度センサにおける筐体１
内のセンサ基板２により仕切られた（図１０参照）筐体
１内の環境温度をＴａ、外側の環境温度Ｔａ＋ΔＴ１と
すると、サーミスタ定数が全て同じであるとすると、Ｂ
定数の大きさをＢ、２５℃における抵抗値をＲとして、
また赤外線１３の受光による温度差をΔＴ２とした場
合、各温度補償用サーミスタ４，１２の抵抗値を計算す
ると、検出側温度補償用サーミスタ４は、赤外線による
温度差ΔＴ２を生じないから、Here, the housing 1 in the non-contact temperature sensor
Assuming that the environment temperature inside the housing 1 partitioned by the sensor substrate 2 inside (see FIG. 10) is Ta and the environment temperature outside is Ta + ΔT1, the thermistor constants are all the same.
Let B be the magnitude of the constant and R be the resistance value at 25 ° C.
When the temperature difference due to the reception of the infrared rays 13 is ΔT2, the resistance values of the temperature compensating thermistors 4 and 12 are calculated, and the detection side temperature compensating thermistor 4 does not cause the temperature difference ΔT2 due to the infrared rays.
【００４１】[0041]
【数４】 (Equation 4)
【００４２】ドリフト補償側温度補償用サーミスタ１２
は、Drift compensation side temperature compensation thermistor 12
Is
【００４３】[0043]
【数５】 (Equation 5)
【００４４】従って基準電圧Ｖrefは、電源電圧をＶと
すればTherefore, if the power supply voltage is V, the reference voltage Vref is
【００４５】[0045]
【数６】 (Equation 6)
【００４６】となる。Is as follows.
【００４７】センサに使用している各サーミスタ３，
４，１１，１２の抵抗値及びＢ定数が同じものを使用し
ているため、 ＴＨ2 ＝ＴＨ4 また、Δｔ２＝０とした場合には、 ＴＨ1 ＝ＴＨ3 となり、Each thermistor 3 used for the sensor
Since the same resistance value and B constant of 4 , 11, 12 are used, TH 2 = TH 4 and when Δt 2 = 0, TH 1 = TH 3 ,
【００４８】[0048]
【数７】 (Equation 7)
【００４９】従って、各サーミスタ３，４，１１，１２
の定数の理想状態において、ブリッジ回路の出力として
の変動要因としては、被検出物から到達する赤外線によ
って発生する熱量にのみ起因することとなる。そのた
め、センサ基板２の表面側と裏面側との環境条件の変化
による温度ドリフトは発生しない。Therefore, each thermistor 3, 4, 11, 12
In the ideal state of the constant of, the factor of variation as the output of the bridge circuit is only due to the amount of heat generated by the infrared rays arriving from the object to be detected. Therefore, temperature drift due to changes in environmental conditions on the front surface side and the back surface side of the sensor substrate 2 does not occur.
【００５０】具体的に説明すると、図２に示すように、
温度検出サーミスタ３は被検出物から放射された赤外線
１３を吸収するため、被検出物からの赤外線量に比例し
て検出側温度補償用サーミスタ４との間に温度差を生じ
る。また、温度ドリフト補償用サーミスタ１１は被検出
物からの赤外線を吸収せず、且つ温度検出用サーミスタ
３と筺体内の同一環境温度の中に存在することとなる。
また、センサ基板２裏面の各温度補償用サーミスタ４，
１２は筐体内の同一環境温度の中に存在するので、各サ
ーミスタ３，４，１１，１２を同等のもので構成すれ
ば、センサ基板２表面とセンサ基板２裏面とでいかなる
環境条件の変化が発生した場合に於いても上記（１）式
より出力値は０となる。また、被検出物からの赤外線１
３による熱量が瞬時に空気中に放出されるという理想条
件では、被検出物からの赤外線１３によって得られる熱
量による差のみが出力として得られるため、センサ基板
２表面とセンサ基板２裏面とのいかなる環境条件の変化
においても温度ドリフトのない温度測定を行うことがで
きる。More specifically, as shown in FIG.
Since the temperature detecting thermistor 3 absorbs the infrared rays 13 radiated from the object to be detected, a temperature difference is generated between the temperature detecting thermistor 4 and the detection side temperature compensating thermistor 4 in proportion to the amount of infrared rays from the object to be detected. Further, the temperature drift compensating thermistor 11 does not absorb infrared rays from the object to be detected, and exists in the same environmental temperature inside the housing as the temperature detecting thermistor 3.
In addition, the temperature compensating thermistors 4 on the back surface of the sensor substrate 2,
Since 12 exists in the same environmental temperature in the housing, if the thermistors 3, 4, 11 and 12 are composed of the same ones, there will be no change in any environmental conditions between the front surface of the sensor substrate 2 and the back surface of the sensor substrate 2. Even when it occurs, the output value becomes 0 according to the above equation (1). In addition, infrared rays from the object to be detected 1
Under the ideal condition that the amount of heat by 3 is instantaneously released into the air, only the difference due to the amount of heat obtained by the infrared rays 13 from the object to be detected is obtained as an output, so that any difference between the front surface of the sensor substrate 2 and the back surface of the sensor substrate 2 can be obtained. It is possible to perform temperature measurement without temperature drift even when environmental conditions change.
【００５１】図３は本発明の第二実施の形態よりなる非
接触温度センサの構造を示す断面図であり、図４は同じ
く平面図である。FIG. 3 is a sectional view showing the structure of the non-contact temperature sensor according to the second embodiment of the present invention, and FIG. 4 is a plan view of the same.
【００５２】本実施の形態では、被検出物から放射され
た赤外線１３を遮断する手段を容易に実現する手段とし
て、図に示すように、温度ドリフト補償用サーミスタ１
１及び温度検出用サーミスタ３から離れているセンサ基
板２表面上に、前記サーミスタ３，１１に接触しないよ
うにスペーサ１５を設ける。そのスペーサ１５の高さ
を、該スペーサ１５に張られる赤外線反射テープ１６と
センサ基板２との空間に熱がこもらないような高さ、例
えば１．６ｍｍ程度の高さにすることにより、温度ドリ
フト補償用サーミスタ１１自体に赤外線の非吸収処理
（赤外線反射マスク）をした場合の精度より格段に優れ
た赤外線非吸収処理を行うことができると共に、安価に
て高性能の非接触温度センサの実現が可能となる。In the present embodiment, as a means for easily realizing the means for blocking the infrared rays 13 radiated from the object to be detected, as shown in the figure, the thermistor 1 for temperature drift compensation is used.
A spacer 15 is provided on the surface of the sensor substrate 2 away from the thermistor 1 and the temperature detecting thermistor 3 so as not to contact the thermistors 3 and 11. By making the height of the spacer 15 such that heat does not stay in the space between the infrared reflective tape 16 stretched over the spacer 15 and the sensor substrate 2, for example, a height of about 1.6 mm, temperature drift It is possible to perform infrared non-absorption processing that is far superior to the accuracy when the compensation thermistor 11 itself is subjected to infrared non-absorption processing (infrared reflection mask), and it is possible to realize a high-performance non-contact temperature sensor at low cost. It will be possible.
【００５３】図５は本発明の第三実施の形態よりなる非
接触温度センサの構造を示す断面図であり、図６は図５
に示す集光手段による赤外線の集光原理を示す図であ
る。FIG. 5 is a sectional view showing the structure of the non-contact temperature sensor according to the third embodiment of the present invention, and FIG. 6 is shown in FIG.
It is a figure which shows the condensing principle of the infrared rays by the condensing means shown in FIG.
【００５４】本実施の形態では、図５に示すように、筐
体１の開口部に集光手段であるフレネル・レンズ１７を
設置してなる構造である。このフレネル・レンズ１７に
より、図６に示すように被検出物から放射された赤外線
１３は集光され温度検出用サーミスタ３の領域にのみ照
射されるようにする。このレンズの効果により、温度ド
リフト補正用サーミスタ１１には、被検出物から放射さ
れた赤外線１３は全く到達しなくなる。従って、温度ド
リフト補償用サーミスタ１１自体への赤外線非吸収処理
や赤外線反射テープの貼る位置決めなどの細かな熱処理
を行わず、容易に高性能の非接触温度センサの実現が可
能となる。また、温度検出用サーミスタ３の赤外線１３
の受光量を向上させることができ、高精度な制御を行う
ことができる。In this embodiment, as shown in FIG. 5, a Fresnel lens 17 as a light condensing means is installed in the opening of the housing 1. The Fresnel lens 17 collects the infrared rays 13 emitted from the object to be detected and irradiates only the area of the temperature detecting thermistor 3 as shown in FIG. Due to the effect of this lens, the infrared rays 13 radiated from the object to be detected do not reach the temperature drift correction thermistor 11. Therefore, it is possible to easily realize a high-performance non-contact temperature sensor without performing a detailed heat treatment such as infrared non-absorption processing or positioning of the infrared reflection tape on the temperature drift compensation thermistor 11 itself. In addition, the infrared ray 13 of the temperature detecting thermistor 3
The amount of received light can be improved, and highly accurate control can be performed.
【００５５】次に、本発明の第四実施の形態よりなる非
接触温度センサの構造について説明する。Next, the structure of the non-contact temperature sensor according to the fourth embodiment of the present invention will be described.
【００５６】上述した第一乃至第三実施の形態におい
て、センサ素子として用いる実際のサーミスタには、必
ずＢ定数や抵抗のばらつきが存在する。いま、Ｂ定数の
ばらつきが直列接続の電源側とグランド側サーミスタに
対して、電源側がＢ定数が大きいもの（以下、「Ｂ定数
の傾きが正のもの」とする）と、小さいもの（以下、
「Ｂ定数の傾きが負のもの」とする）とについての出力
変化をみると、Ｂ定数の傾きが正のものとＢ定数の傾き
が負のものとを組み合わせると、環境温度が変化するに
従ってＢ定数が等しいものを基準に対して誤差が逆符号
となるため、全体としての誤差は大きくなる。また、Ｂ
定数の傾きが負のもの同士を組み合わせると、Ｂ定数の
傾きが正のもの同士を組み合わせると、比較して誤差の
大きさは同じように小さくなる。In the above-described first to third embodiments, the actual thermistor used as the sensor element always has variations in B constant and resistance. Now, with respect to the B-constant thermistor connected in series, the B-constant has a large B-constant on the power-supply side (hereinafter referred to as "the slope of the B-constant is positive") and a small one (hereinafter,
"(The slope of the B constant is negative)", the combination of the positive slope of the B constant and the negative slope of the B constant shows that as the ambient temperature changes, Since the error has the opposite sign with respect to those having the same B constant, the error becomes large as a whole. Also, B
When the constants having a negative slope are combined, and when the constants B having a positive slope are combined, the magnitude of the error is similarly reduced in comparison.
【００５７】ただし、Ｂ定数の傾きが負のもの同士を組
み合わせると、出力電力が対象物との温度差が大きくな
るにつれて小さくなる。従って、Ｂ定数の傾きが正のも
の同士となるようにＢ定数の大きさを、温度検出用サー
ミスタ３＞検出側温度補償用サーミスタ４、温度ドリフ
ト補償用サーミスタ１１＞ドリフト補償側温度補償用サ
ーミスタ１２となるように組み合わせて、基本的なセン
サの性能のばらつきを小さくすることが可能となる。However, when the B constants having a negative slope are combined, the output power becomes smaller as the temperature difference from the target becomes larger. Therefore, the magnitudes of the B constants are set so that the B constants have positive inclinations, the temperature detection thermistor 3> the detection side temperature compensation thermistor 4, the temperature drift compensation thermistor 11> the drift compensation side temperature compensation thermistor. It is possible to reduce the variation in the basic sensor performance by combining them so as to have the value of 12.
【００５８】次に、本発明の第五実施の形態よりなる非
接触温度センサの構造について説明する。Next, the structure of the non-contact temperature sensor according to the fifth embodiment of the present invention will be described.
【００５９】上述した第一乃至第三実施の形態におい
て、センサ素子において環境温度が急速に変化した場合
に、温度差によって環境温度が変化した方のサーミスタ
の熱量が変化する。各サーミスタ自体はその抵抗値及び
Ｂ定数が等しく、サーミスタ間に挟まれているセンサ基
板２の材質は同じ物であるため、表面側のサーミスタと
裏面側のサーミスタとの間の熱伝導の大きさＤ（Ｊ／ｓ
ｅｃ）は等しくなる。いま、環境温度が変化した方のサ
ーミスタの熱容量をＭ（Ｊ／℃）とすると、一瞬のうち
に片方のサーミスタの周辺温度が１℃変化して元の環境
温度に戻ったとすると、環境温度が変わった方のサーミ
スタと他方のサーミスタが熱平衡になる時間ｔ１は以下
のようになる。In the first to third embodiments described above, when the environmental temperature of the sensor element changes rapidly, the amount of heat of the thermistor whose environmental temperature has changed changes due to the temperature difference. Since the thermistors themselves have the same resistance value and B constant, and the material of the sensor substrate 2 sandwiched between the thermistors is the same, the amount of heat conduction between the thermistor on the front surface side and the thermistor on the rear surface side is large. D (J / s
ec) will be equal. Now, assuming that the thermal capacity of the thermistor whose environmental temperature has changed is M (J / ° C), if the ambient temperature of one thermistor changes by 1 ° C and returns to the original environmental temperature in an instant, the environmental temperature will change. The time t1 when the changed thermistor and the other thermistor are in thermal equilibrium are as follows.
【００６０】ｔ1 ＝Ｍ×１÷Ｄ （ｓｅｃ） 従って、各サーミスタの熱容量が異なると熱平衡になる
時間が一定にならないため、環境温度の変化にたいして
熱平衡状態になるまでに被測定物の検出温度に温度ドリ
フトが発生する。T 1 = M × 1 ÷ D (sec) Therefore, when the thermal capacities of the thermistors are different, the time of thermal equilibrium is not constant. Temperature drift occurs.
【００６１】上述した第一実施乃至第三実施の形態にお
いて、温度検出用サーミスタ３には、赤外線が吸収しや
すいように赤外線吸収塗料などが塗られているため、通
常のサーミスタに比べて熱容量が大きくなっているため
に、熱平衡状態までの温度ドリフトの発生が起こる。そ
のため、温度ドリフト補償用サーミスタ１１に熱容量を
持った塗料を、温度検出用サーミスタ３と熱容量が同じ
になるように塗ることで、熱平衡状態までの温度ドリフ
トを防ぐことで、容易に高性能の非接触温度センサの実
現が可能となる。In the above-described first to third embodiments, the temperature detecting thermistor 3 is coated with an infrared absorbing paint or the like so that infrared rays are easily absorbed, so that it has a heat capacity higher than that of a normal thermistor. Because of the large size, temperature drift to the thermal equilibrium occurs. Therefore, by coating the temperature drift compensating thermistor 11 with a paint having a heat capacity so as to have the same heat capacity as that of the temperature detecting thermistor 3, the temperature drift to the thermal equilibrium state is prevented, so that a high performance A contact temperature sensor can be realized.
【００６２】次に、本発明の第六実施の形態よりなる非
接触温度センサの構造について説明する。Next, the structure of the non-contact temperature sensor according to the sixth embodiment of the present invention will be described.
【００６３】上述した第一乃至第三実施の形態におい
て、温度検出用サーミス３は、受光した赤外線１３によ
り温められ、この温められた熱は、熱伝導率の悪いセン
サ基板２を挟んで検出側温度補償用サーミスタ４の接触
しているので、一瞬では熱平衡状態にはならなので、温
度検出用サーミスタ３と検出側温度補償用サーミスタ４
の間には受光した赤外線の量に比例した温度差が発生す
るため、被検出物の温度を検出できる。しかし、温度検
出用サーミスタ３に発生した熱が温度ドリフト補償用サ
ーミスタ１１に流れると、温度補償用サーミスタ４，１
２との温度差が小さくなるなるので感度が悪くなる。ま
た、温度ドリフト補償用サーミスタ１１に熱が流れるこ
とで温度ドリフト補償側の精度も悪くなる。したがっ
て、影響を小さくするために各サーミスタ３，４及び１
１，１２のそれぞれの間の距離を離し、センサ基板２に
よる熱放散で熱流の影響を小さくすることができる。し
かし、離しすぎると環境温度が異なる場合も発生するた
め、離す距離を１ｍｍ程度とすることで熱流の流れの影
響を無くし高性能の非接触温度センサの実現が可能とな
る。In the above-described first to third embodiments, the temperature detecting thermist 3 is warmed by the infrared rays 13 received, and the warmed heat is detected by sandwiching the sensor substrate 2 having a poor thermal conductivity. Since the temperature compensating thermistor 4 is in contact with the temperature compensating thermistor 4, the temperature detecting thermistor 3 and the detecting side temperature compensating thermistor 4 cannot be brought into a thermal equilibrium state in a moment.
Since a temperature difference proportional to the amount of infrared rays received occurs between them, the temperature of the object to be detected can be detected. However, when the heat generated in the temperature detecting thermistor 3 flows into the temperature drift compensating thermistor 11, the temperature compensating thermistors 4 and 1 are detected.
Since the temperature difference from 2 becomes small, the sensitivity becomes poor. Further, since heat flows through the temperature drift compensation thermistor 11, the accuracy on the temperature drift compensation side also deteriorates. Therefore, in order to reduce the influence, each thermistor 3, 4 and 1
It is possible to reduce the influence of the heat flow due to the heat dissipation by the sensor substrate 2 by separating the distances 1 and 12 from each other. However, if they are separated too much, the environmental temperature may be different. Therefore, by setting the distance to about 1 mm, it is possible to eliminate the influence of the flow of the heat flow and realize a high-performance non-contact temperature sensor.
【００６４】次に、本発明の第七実施の形態よりなる非
接触温度センサの構造について説明する。Next, the structure of the non-contact temperature sensor according to the seventh embodiment of the present invention will be described.
【００６５】上述した第一乃至第三実施の形態におい
て、前述した第六実施の形態のように、基板に対して平
行に並置された各サーミスタ間の距離を離すことで熱流
の方向を制御しようとしても、実際には、各サーミスタ
間の熱伝導は０にはならない。このため、図７に示すよ
うに、空気層にて熱流が遮断することができる最少幅の
スリット１８を、各サーミスタ間の基板部分に設けるこ
とで、各サーミスタ相互の熱流をなくすことができる。
このため、スリット１８の設置で熱流による影響を無く
し高性能の非接触温度センサの実現が可能となる。In the first to third embodiments described above, as in the sixth embodiment described above, the direction of the heat flow is controlled by separating the thermistors arranged in parallel to the substrate. However, actually, the heat conduction between the thermistors does not become zero. Therefore, as shown in FIG. 7, by providing the slit 18 having the minimum width capable of blocking the heat flow in the air layer in the substrate portion between the thermistors, the heat flow between the thermistors can be eliminated.
Therefore, the installation of the slit 18 eliminates the influence of the heat flow and makes it possible to realize a high-performance non-contact temperature sensor.
【００６６】次に、本発明の第八実施の形態よりなる非
接触温度センサの構造について説明する。Next, the structure of the non-contact temperature sensor according to the eighth embodiment of the present invention will be described.
【００６７】上述した第一乃至第三実施の形態におい
て、前述した第七実施の形態のように各サーミスタ間の
基板部分にスリット１８を設けることにより、センサ基
板２の表面側と裏面側の環境が異なる場合に、スリット
１８を通しての熱の移動がスリット周辺部にて起こる。
前記スリット１８の周囲にはサーミスタ３，４，１１，
１２が存在するためため、スリットの周辺部にて起こっ
ている熱の移動による影響をサーミスタ３，４，１１，
１２が受けてしまう。そのため図８に示すように、スリ
ット１８間を通して空気の移動が少なくなるように、細
いスリット１８ａを数本設ける。これによりスリットに
よる空気の影響を無くし、高性能の非接触温度センサの
実現が可能となる。In the above-described first to third embodiments, the slits 18 are provided in the substrate portion between the thermistors as in the above-described seventh embodiment, so that the environment on the front surface side and the back surface side of the sensor substrate 2 is reduced. , The transfer of heat through the slit 18 occurs around the slit.
Around the slit 18, thermistors 3, 4, 11,
Since there are 12 thermistors 3, 4, 11,
12 will receive. Therefore, as shown in FIG. 8, several thin slits 18a are provided so that the movement of air through the slits 18 is reduced. As a result, the influence of air due to the slits can be eliminated, and a high-performance non-contact temperature sensor can be realized.
【００６８】次に、本発明の第九実施の形態よりなる非
接触温度センサの構造について説明する。Next, the structure of the non-contact temperature sensor according to the ninth embodiment of the present invention will be described.
【００６９】上述した第一乃至第三実施の形態におい
て、各サーミスタ間の周辺のセンサ基板２を、図９に示
すように各サーミスタを保持するのに必要な強度の基板
部分を残して削除する。これにより、センサ基板２の表
面側と裏面側の空気の流れが流通通路１９を通り自由に
なり、基板表面側と裏面側との環境条件が同じ条件とな
る。したがって、環境条件の変化による熱流による影響
を無くし、高性能の非接触温度センサの実現が可能とな
る。In the above-described first to third embodiments, the sensor substrate 2 around each thermistor is deleted while leaving a substrate portion having a strength required to hold each thermistor as shown in FIG. . As a result, the flow of air on the front surface side and the back surface side of the sensor substrate 2 can freely pass through the circulation passage 19, and the environmental conditions on the substrate front surface side and the back surface side are the same. Therefore, the influence of heat flow due to changes in environmental conditions can be eliminated, and a high-performance non-contact temperature sensor can be realized.
【００７０】尚、上記では、第一乃至第三実施の形態に
おいて第四乃至第九実施の形態の一つを組み合わせる構
成としたが、複数を組み合わせてより高性能な非接触温
度センサを得ることも可能である。In the above description, one of the fourth to ninth embodiments is combined in the first to third embodiments, but a plurality of combinations can be obtained to obtain a higher performance non-contact temperature sensor. Is also possible.
【００７１】[0071]
【発明の効果】以上説明したように、本発明の非接触温
度センサによれば、請求項１記載の発明は、基準電圧発
生手段が、基板表面に配置され遮光された温度ドリフト
補償用サーミスタと、基板裏面に配置されたドリフト補
償側温度補償用サーミスタとからなる構成なので、基板
表面側と裏面側との環境条件の変化による温度変化の影
響を受けることなく、精度のよい測定が可能となる。As described above, according to the non-contact temperature sensor of the present invention, the invention according to claim 1 is such that the reference voltage generating means is a thermistor for temperature drift compensation arranged on the substrate surface and shielded from light. Since it is composed of the drift compensating side temperature compensating thermistor arranged on the back surface of the substrate, accurate measurement can be performed without being affected by temperature changes due to changes in environmental conditions on the front surface side and the back surface side of the substrate. .
【００７２】また、請求項２記載の発明は、前記基板表
面にスペーサを介して配置され前記温度ドリフト補償用
サーミスタを覆う赤外線反射テープを設けた構成なの
で、前記温度ドリフト補償用サーミスタ自身に赤外線反
射のための特殊処理を施す必要がなく、容易に赤外線反
射処理を行うことができ、コスト低減が図れる。According to the second aspect of the invention, since the infrared reflection tape is provided on the surface of the substrate via the spacer and covers the temperature drift compensating thermistor, the temperature drift compensating thermistor itself has infrared reflection. Infrared reflection processing can be easily performed without needing to perform a special treatment for, and cost can be reduced.
【００７３】さらに、請求項３記載の発明は、前記基板
表面の上方に前記温度検出用サーミスタにのみ焦点を結
ぶ集光手段を設けた構成なので、赤外線が温度ドリフト
補償用サーミスタに照射されることを防止でき、温度ド
リフト補償用サーミスタ自身に赤外線反射の特殊処理、
赤外線反射処理等を行うことなく、且つサーミスタの直
接の外乱要因の影響を少なくすることができ、精度のよ
い測定が可能となる。また、温度検出用サーミスタの赤
外線の受光量を向上させることができ、高精度なセンサ
制御を行うことができる。Further, according to the third aspect of the invention, since the condensing means for focusing only on the temperature detecting thermistor is provided above the substrate surface, infrared rays are applied to the temperature drift compensating thermistor. The temperature drift compensation thermistor itself has a special treatment of infrared reflection,
The influence of the direct disturbance factor of the thermistor can be reduced without performing infrared reflection processing or the like, and accurate measurement can be performed. Further, the amount of infrared rays received by the temperature detecting thermistor can be improved, and highly accurate sensor control can be performed.
【００７４】加えて、請求項４記載の発明は、前記各サ
ーミスタのＢ定数の大きさが、温度検出用サーミスタ＞
検出側温度補償用サーミスタ、温度ドリフト補償用サー
ミスタ＞ドリフト補償側温度補償用サーミスタとなるよ
う設定した構成なので、Ｂ定数のばらつきによる抵抗変
化による影響を小さくすることができ、精度のよい測定
が可能となる。In addition, according to the invention of claim 4, the B constant of each of the thermistors is larger than the temperature detecting thermistor.
The detection side temperature compensating thermistor, temperature drift compensating thermistor> drift compensating side temperature compensating thermistor is configured so that the influence of resistance change due to B constant variation can be reduced and accurate measurement can be performed. Becomes
【００７５】加えて、請求項５記載の発明は、前記温度
検出用サーミスタの表面に赤外線吸収塗料を塗布すると
ともに、前記温度ドリフト補償用サーミスタの表面に前
記赤外線吸収塗料の熱容量と略同一の熱容量を有する赤
外線反射塗料を塗布してなる構成なので、温度検出用サ
ーミスタの赤外線の受光量を向上させることができ、高
精度なセンサ制御を行うことができるとともに、温度検
出用サーミスタの熱容量と温度ドリフト補正用サーミス
タの熱容量とを等しくすることで、熱伝導の差によるセ
ンサ感度への影響を小さくすることができ、精度のよい
測定が可能となる。In addition, in the invention according to claim 5, the infrared absorption paint is applied to the surface of the temperature detecting thermistor, and the heat capacity of the temperature drift compensation thermistor is substantially the same as the heat capacity of the infrared absorption paint. Since it is configured by applying an infrared reflective paint with the temperature detection thermistor, it is possible to improve the amount of infrared rays received by the temperature detection thermistor, and it is possible to perform highly accurate sensor control, as well as the thermal capacity and temperature drift of the temperature detection thermistor. By making the heat capacity of the correction thermistor equal, the influence on the sensor sensitivity due to the difference in heat conduction can be reduced, and accurate measurement becomes possible.
【００７６】加えて、請求項６記載の発明は、前記基板
表面の両サーミスタの間隔と、基板裏面の両サーミスタ
の間隔とをそれぞれ略１ｍｍに設定したので、基板を介
することにより生じる基板表面のサーミスタの並置方向
への熱伝導による熱流を防ぎ、熱流によるセンサ感度へ
の影響を小さくすることができ、精度のよい測定が可能
となる。In addition, according to the invention of claim 6, the distance between the thermistors on the front surface of the substrate and the distance between the thermistors on the rear surface of the substrate are set to about 1 mm, respectively. It is possible to prevent heat flow due to heat conduction in the juxtaposed direction of the thermistors, reduce the influence of the heat flow on the sensor sensitivity, and perform accurate measurement.
【００７７】加えて、請求項７記載の発明は、前記基板
表面の両サーミスタ間及び前記基板裏面の両サーミスタ
間にそれぞれスリットを設けたので、該スリットにより
基板を介することにより生じる基板表面のサーミスタの
並置方向に対する熱的な結合を無くすことができ、セン
サ感度への影響をなくすことができ、精度のよい測定が
できる。In addition, according to the invention of claim 7, since slits are provided between the thermistors on the front surface of the substrate and between the thermistors on the rear surface of the substrate, respectively, the thermistor on the front surface of the substrate generated by the slits interposing the substrate. The thermal coupling in the juxtaposed direction can be eliminated, the influence on the sensor sensitivity can be eliminated, and accurate measurement can be performed.
【００７８】加えて、請求項８記載の発明は、前記スリ
ットを複数設けたので、基板の表面側と裏面側との空気
の対流を小さくし、スリットを設けたことによるセンサ
感度への影響をなくすことができ、精度のよい測定が可
能となる。In addition, in the invention according to claim 8, since the plurality of slits are provided, the convection of air between the front surface side and the back surface side of the substrate is reduced, and the influence of the slits on the sensor sensitivity is reduced. It can be eliminated, and accurate measurement becomes possible.
【００７９】加えて、請求項９記載の発明は、前記基板
のサーミスタ非搭載部分に空気の流通通路を設けたの
で、基板の表面側と裏面側との環境温度差による不必要
な熱流を削除し、センサ感度への影響をなくすことがで
き、精度のよい測定が可能となる。In addition, in the invention according to claim 9, since the air flow passage is provided in the part where the thermistor is not mounted on the substrate, unnecessary heat flow due to the difference in environmental temperature between the front surface side and the rear surface side of the substrate is eliminated. However, the influence on the sensor sensitivity can be eliminated, and accurate measurement can be performed.
【図１】本発明の非接触温度センサの回路構成図であ
る。FIG. 1 is a circuit configuration diagram of a non-contact temperature sensor of the present invention.
【図２】本発明の第一実施の形態よりなる非接触温度セ
ンサの構造を示す断面図である。FIG. 2 is a cross-sectional view showing the structure of the non-contact temperature sensor according to the first embodiment of the present invention.
【図３】本発明の第二実施の形態よりなる非接触温度セ
ンサの構造を示す断面図である。FIG. 3 is a sectional view showing the structure of a non-contact temperature sensor according to a second embodiment of the present invention.
【図４】同じく上面図である。FIG. 4 is a top view of the same.
【図５】本発明の第三実施の形態よりなる非接触温度セ
ンサの構造を示す断面図である。FIG. 5 is a sectional view showing the structure of a non-contact temperature sensor according to a third embodiment of the present invention.
【図６】図５に示す集光手段による集光原理説明図であ
る。FIG. 6 is an explanatory diagram of a light collecting principle by the light collecting means shown in FIG.
【図７】本発明の第七実施の形態よりなる非接触温度セ
ンサの構造を示す断面図である。FIG. 7 is a sectional view showing the structure of a non-contact temperature sensor according to a seventh embodiment of the present invention.
【図８】本発明の第八実施の形態よりなる非接触温度セ
ンサの構造を示す断面図である。FIG. 8 is a sectional view showing the structure of a non-contact temperature sensor according to an eighth embodiment of the present invention.
【図９】本発明の第九実施の形態よりなる非接触温度セ
ンサの構造を示す断面図である。FIG. 9 is a sectional view showing the structure of a non-contact temperature sensor according to a ninth embodiment of the present invention.
【図１０】非接触温度センサの外観図である。FIG. 10 is an external view of a non-contact temperature sensor.
【図１１】従来の非接触温度センサの回路構成図であ
る。FIG. 11 is a circuit configuration diagram of a conventional non-contact temperature sensor.
【図１２】従来の非接触温度センサの構造を示す断面図
である。FIG. 12 is a sectional view showing a structure of a conventional non-contact temperature sensor.
【図１３】環境温度変化量に対するセンサ感度と温度ド
リフトの変化との相関図である。FIG. 13 is a correlation diagram of changes in sensor sensitivity and temperature drift with respect to changes in environmental temperature.
２ センサ基板 ３ 温度検出用サーミスタ ４ 検出側温度補償用サーミスタ １１ 温度ドリフト補償用サーミスタ １２ ドリフト補償側温度補償用サーミスタ １３ 赤外線 １４ 赤外線反射マスク １５ スペーサ １６ 赤外線反射テープ １７ フレネル・レンズ １８，１８ａ スリット １９ 流通通路 2 sensor substrate 3 temperature detection thermistor 4 detection side temperature compensation thermistor 11 temperature drift compensation thermistor 12 drift compensation side temperature compensation thermistor 13 infrared 14 infrared reflection mask 15 spacer 16 infrared reflection tape 17 Fresnel lens 18, 18a slit 19 Distribution passage
Claims (9)
線を受光する温度検出用サーミスタと、基板裏面に配置
された検出側温度補償用サーミスタと、２つの基準電圧
発生手段とからなるブリッジ回路で構成された非接触温
度センサにおいて、 前記基準電圧発生手段が、基板表面に配置され遮光され
た温度ドリフト補償用サーミスタと、基板裏面に配置さ
れたドリフト補償側温度補償用サーミスタとからなるこ
とを特徴とする非接触温度センサ。1. A bridge circuit comprising a temperature detecting thermistor arranged on the front surface of the substrate for receiving infrared rays from an object to be detected, a detection side temperature compensating thermistor arranged on the rear surface of the substrate, and two reference voltage generating means. In the non-contact temperature sensor configured as described above, the reference voltage generating means comprises a temperature drift compensation thermistor arranged on the front surface of the substrate and shielded from light, and a drift compensation side temperature compensation thermistor arranged on the rear surface of the substrate. Characteristic non-contact temperature sensor.
れ前記温度ドリフト補償用サーミスタを覆う赤外線反射
テープを設けたことを特徴とする請求項１に記載の非接
触温度センサ。2. The non-contact temperature sensor according to claim 1, further comprising an infrared reflection tape provided on the surface of the substrate via a spacer and covering the temperature drift compensating thermistor.
ーミスタにのみ焦点を結ぶ集光手段を設けたことを特徴
とする請求項１に記載の非接触温度センサ。3. The non-contact temperature sensor according to claim 1, further comprising a condensing unit provided above the surface of the substrate to focus only on the temperature detecting thermistor.
温度検出用サーミスタ＞検出側温度補償用サーミスタ、
温度ドリフト補償用サーミスタ＞ドリフト補償側温度補
償用サーミスタとなるよう設定したことを特徴とする請
求項１記載の非接触温度センサ。4. The magnitude of the B constant of each thermistor is
Thermistor for temperature detection> Thermistor for temperature compensation on the detection side,
The non-contact temperature sensor according to claim 1, wherein the thermistor for temperature drift compensation> the thermistor for temperature compensation on the drift compensation side is set.
線吸収塗料を塗布するとともに、前記温度ドリフト補償
用サーミスタの表面に前記赤外線吸収塗料の熱容量と略
同一の熱容量を有する赤外線反射塗料を塗布したことを
特徴とする請求項１記載の非接触温度センサ。5. An infrared absorbing paint is applied to the surface of the temperature detecting thermistor, and an infrared reflecting paint having a heat capacity substantially the same as that of the infrared absorbing paint is applied to the surface of the temperature drift compensating thermistor. The non-contact temperature sensor according to claim 1.
基板裏面の両サーミスタの間隔とをそれぞれ略１ｍｍに
設定したことを特徴とする請求項１記載の非接触温度セ
ンサ。6. A space between the thermistors on the surface of the substrate,
The non-contact temperature sensor according to claim 1, wherein the distance between the thermistors on the back surface of the substrate is set to about 1 mm.
基板裏面の両サーミスタ間にそれぞれスリットを設けた
ことを特徴とする請求項６に記載の非接触温度センサ。7. The non-contact temperature sensor according to claim 6, wherein slits are provided between the thermistors on the front surface of the substrate and between the thermistors on the rear surface of the substrate.
する請求項７に記載の非接触温度センサ。8. The non-contact temperature sensor according to claim 7, wherein a plurality of the slits are provided.
の流通通路を設けたことを特徴とする請求項１記載の非
接触温度センサ。9. The non-contact temperature sensor according to claim 1, wherein a flow passage for air is provided in a portion of the substrate where the thermistor is not mounted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07381496A JP3208320B2 (en) | 1996-03-28 | 1996-03-28 | Non-contact temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07381496A JP3208320B2 (en) | 1996-03-28 | 1996-03-28 | Non-contact temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09264792A true JPH09264792A (en) | 1997-10-07 |
| JP3208320B2 JP3208320B2 (en) | 2001-09-10 |
Family
ID=13529013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07381496A Expired - Fee Related JP3208320B2 (en) | 1996-03-28 | 1996-03-28 | Non-contact temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3208320B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000111397A (en) * | 1998-10-05 | 2000-04-18 | Nec Corp | Two-dimensional array-type infrared detecting element and its manufacture |
| US8035941B2 (en) | 2007-09-04 | 2011-10-11 | Nec Lcd Technologies, Ltd. | DC/AC inverter substrate having voltage abnormality detector circuit |
| JP2011214927A (en) * | 2010-03-31 | 2011-10-27 | Tdk Corp | Infrared temperature sensor |
| WO2011145295A1 (en) * | 2010-05-20 | 2011-11-24 | 日本電気株式会社 | Bolometer and method for manufacturing the same |
| JP2012211789A (en) * | 2011-03-30 | 2012-11-01 | Mitsubishi Materials Corp | Infrared sensor and circuit board equipped with the same |
| JP2013003014A (en) * | 2011-06-17 | 2013-01-07 | Tdk Corp | Infrared sensor |
| JP2014149300A (en) * | 2014-03-28 | 2014-08-21 | Tdk Corp | Temperature sensor |
| US10101217B2 (en) | 2015-06-24 | 2018-10-16 | Lsis Co., Ltd. | Method for temperature drift compensation of temperature measurement device using thermocouple |
| KR20200092734A (en) * | 2019-01-25 | 2020-08-04 | 조선대학교산학협력단 | Temperature sensing system using infrared rays |
| KR20210032110A (en) * | 2019-09-16 | 2021-03-24 | 광주과학기술원 | Real-time optical power measurement device including a pair of thermocouples and method for operating thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0517867U (en) * | 1991-08-22 | 1993-03-05 | 旭光学工業株式会社 | Push button device |
-
1996
- 1996-03-28 JP JP07381496A patent/JP3208320B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000111397A (en) * | 1998-10-05 | 2000-04-18 | Nec Corp | Two-dimensional array-type infrared detecting element and its manufacture |
| US6441372B1 (en) | 1998-10-05 | 2002-08-27 | Nec Corporation | Infrared focal plane array detector and method of producing the same |
| US8035941B2 (en) | 2007-09-04 | 2011-10-11 | Nec Lcd Technologies, Ltd. | DC/AC inverter substrate having voltage abnormality detector circuit |
| US8837094B2 (en) | 2007-09-04 | 2014-09-16 | Nlt Technologies, Ltd. | DC/AC inverter substrate having voltage abnormality detector circuit |
| JP2011214927A (en) * | 2010-03-31 | 2011-10-27 | Tdk Corp | Infrared temperature sensor |
| WO2011145295A1 (en) * | 2010-05-20 | 2011-11-24 | 日本電気株式会社 | Bolometer and method for manufacturing the same |
| JP2012211789A (en) * | 2011-03-30 | 2012-11-01 | Mitsubishi Materials Corp | Infrared sensor and circuit board equipped with the same |
| JP2013003014A (en) * | 2011-06-17 | 2013-01-07 | Tdk Corp | Infrared sensor |
| JP2014149300A (en) * | 2014-03-28 | 2014-08-21 | Tdk Corp | Temperature sensor |
| US10101217B2 (en) | 2015-06-24 | 2018-10-16 | Lsis Co., Ltd. | Method for temperature drift compensation of temperature measurement device using thermocouple |
| KR20200092734A (en) * | 2019-01-25 | 2020-08-04 | 조선대학교산학협력단 | Temperature sensing system using infrared rays |
| KR20210032110A (en) * | 2019-09-16 | 2021-03-24 | 광주과학기술원 | Real-time optical power measurement device including a pair of thermocouples and method for operating thereof |
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| Publication number | Publication date |
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| JP3208320B2 (en) | 2001-09-10 |
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