JPH09250964A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPH09250964A
JPH09250964A JP5957696A JP5957696A JPH09250964A JP H09250964 A JPH09250964 A JP H09250964A JP 5957696 A JP5957696 A JP 5957696A JP 5957696 A JP5957696 A JP 5957696A JP H09250964 A JPH09250964 A JP H09250964A
Authority
JP
Japan
Prior art keywords
pressure
magnetic fluid
magnetic
hole
fluid layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5957696A
Other languages
Japanese (ja)
Inventor
Norikimi Kaji
紀公 梶
Masami Hori
正美 堀
Takashi Yajima
孝志 矢島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP5957696A priority Critical patent/JPH09250964A/en
Publication of JPH09250964A publication Critical patent/JPH09250964A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a small-sized low-cost semiconductor pressure sensor which can accurately detect the pressure of gas having corrosiveness or liquid having conductivity with a simple constitution. SOLUTION: A sensor chip 1 is fixed to a glass pedestal 2, and further mounted at a vessel body 3. The body 3 has cylindrical pressure introducing tube 3b, and is charged therein with silicone oil 4. A pole piece 7 having a pressure introducing hole 7c is mounted at the end of the tube 3b, and further a permanent magnet 6 is inserted thereinside. Magnetic fluid is poured in the hole 7c to form a magnetic fluid layer 5. The pressure of fluid P to be pressure detected is transmitted to the oil 4 via the layer 5 disposed in the hole 7c, and further transmitted to the chip 1. Incidentally, since the layer 5 is held substantially at a predetermined position by the magnetic force of the magnet 6, the oil is not externally leaked from the hole 7c.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体圧力センサ
に関し、特に腐食性を有する気体あるいは導電性を有す
る液体などを被圧力検出流体とする半導体圧力センサに
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor, and more particularly to a semiconductor pressure sensor which uses a corrosive gas or a conductive liquid as a pressure detection fluid.

【0002】[0002]

【従来の技術】従来より、シリコンの優れた弾性体とし
ての性質を利用し、マイクロマシニング技術によりダイ
ヤフラム部と呼ばれる薄膜部をシリコン基板に形成して
圧力変化を電気信号に変換するようにした半導体圧力セ
ンサが提供されている。図5はこのような従来の半導体
圧力センサの一例を示し、シリコンのピエゾ抵抗効果を
利用してダイヤフラム部の歪みを拡散抵抗の抵抗値変化
として検出するピエゾ抵抗型(あるいは歪みゲージ型)
の半導体圧力センサであって、特に腐食性を有する気体
や導電性を有す液体などを被圧力検出流体とする用途に
用いられ、半導体基板を加工して薄膜のダイヤフラム部
1a及びダイヤフラム部1aの圧力による歪みを検出す
るピエゾ抵抗11が形成されるとともにガラス台座2に
固着されたセンサチップ1と、略函形に形成されて内部
にセンサチップ1が納装される本体12と、本体12の
開口部を閉塞するステンレスダイヤフラム13と、本体
12の内部に封入されるシリコンオイル14と、ハーメ
チックシール15によって本体12に封止された端子1
6と、この端子16をセンサチップ1のピエゾ抵抗11
と接続するボンディング用のワイヤ17とを備えてい
る。すなわち、被圧力検出流体Pはステンレスダイヤフ
ラム14の外側に接触しており、ステンレスダイヤフラ
ム14が被圧力検出流体から受けた圧力が本体12内部
のシリコンオイル15を介してセンサチップ1のダイヤ
フラム部1aに伝達され、被圧力検出流体の圧力を検出
することができる。
2. Description of the Related Art Conventionally, a semiconductor in which a thin film portion called a diaphragm portion is formed on a silicon substrate by a micromachining technique by utilizing the property of silicon as an excellent elastic body to convert a pressure change into an electric signal. A pressure sensor is provided. FIG. 5 shows an example of such a conventional semiconductor pressure sensor, which is a piezoresistive type (or strain gauge type) that detects the strain of the diaphragm portion as the resistance value change of the diffusion resistance by utilizing the piezoresistive effect of silicon.
Of the semiconductor pressure sensor, which is used particularly for the purpose of using a corrosive gas or a liquid having conductivity as a pressure detection fluid, and is used to process a semiconductor substrate to form a thin film diaphragm portion 1a and a diaphragm portion 1a. A piezoresistor 11 for detecting strain due to pressure is formed and a sensor chip 1 fixed to a glass pedestal 2, a main body 12 formed in a substantially box shape and having the sensor chip 1 mounted therein, and a main body 12 A stainless diaphragm 13 that closes the opening, a silicone oil 14 that is sealed inside the body 12, and a terminal 1 that is sealed in the body 12 by a hermetic seal 15.
6 and this terminal 16 are connected to the piezoresistor 11 of the sensor chip 1.
And a wire 17 for bonding that is connected to the wire. That is, the pressure detection fluid P is in contact with the outside of the stainless diaphragm 14, and the pressure received by the stainless diaphragm 14 from the pressure detection fluid is applied to the diaphragm portion 1a of the sensor chip 1 via the silicone oil 15 inside the main body 12. The pressure of the transmitted pressure-sensing fluid can be detected.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記従
来構成では、導圧媒体たるシリコンオイル14を本体1
2内に封止し且つ圧力をシリコンオイル14に伝達する
ためにステンレスダイヤフラム13を用いており、構造
が複雑になり、コストが高くなるという欠点がある。ま
た、大きさも嵩高くなり、小型化が困難である。さら
に、ステンレスダイヤフラム13の反力の影響を受け、
センサチップ1の検出精度が悪くなるという問題もあっ
た。
However, in the above-mentioned conventional configuration, the silicon oil 14 as the pressure guiding medium is used in the main body 1.
The stainless diaphragm 13 is used to seal the inside of the container 2 and to transmit the pressure to the silicone oil 14, which has a drawback that the structure is complicated and the cost is increased. In addition, the size becomes bulky and it is difficult to reduce the size. Furthermore, due to the reaction force of the stainless diaphragm 13,
There is also a problem that the detection accuracy of the sensor chip 1 deteriorates.

【0004】本発明は上記問題に鑑みて為されたもので
あり、その目的とするところは、簡単な構成により腐食
性を有する気体や導電性を有する液体の圧力を高精度で
検出することができる小型で安価な半導体圧力センサを
提供するにある。
The present invention has been made in view of the above problems, and an object thereof is to detect the pressure of a corrosive gas or a conductive liquid with high accuracy with a simple structure. It is to provide a small and inexpensive semiconductor pressure sensor that can be manufactured.

【0005】[0005]

【課題を解決するための手段】請求項1の発明は、上記
目的を達成するために、半導体基板を加工して薄膜のダ
イヤフラム部及び該ダイヤフラム部の圧力による歪みを
検出する検出素子が形成されたセンサチップと、被圧力
検出流体の圧力を前記ダイヤフラム部に伝達する液状の
導圧媒体が充填された器体と、該器体の受圧部に配設さ
れ前記導圧媒体と被圧力検出流体を隔離する磁性流体層
と、磁気力により前記磁性流体層を所定位置に保持する
磁石とを備えたものであり、器体内に充填された導圧媒
体が磁性流体層によって被圧力検出流体と隔離されるか
ら両者が混じることがなく、被圧力検出流体の圧力は磁
石により保持された磁性流体層を介して導圧媒体に伝達
され、さらに導圧媒体からセンサチップのダイヤフラム
部に伝達される。このため、従来例に比べて簡単な構成
で腐食性を有する気体や導電性を有する液体の圧力を高
精度に検出することができ、また、構成が簡単であるか
ら小型化並びにコストダウンが図れる。
In order to achieve the above-mentioned object, the invention of claim 1 forms a diaphragm portion of a thin film by processing a semiconductor substrate and a detection element for detecting strain due to pressure of the diaphragm portion. Sensor chip, a container filled with a liquid pressure-conducting medium for transmitting the pressure of the pressure-detected fluid to the diaphragm part, and the pressure-conducting medium and the pressure-detected fluid arranged in the pressure receiving part of the container. And a magnet for holding the magnetic fluid layer at a predetermined position by a magnetic force. The pressure guiding medium filled in the body is separated from the pressure-detected fluid by the magnetic fluid layer. Therefore, the pressure detected fluid is transmitted to the pressure-conducting medium via the magnetic fluid layer held by the magnet, and further transmitted from the pressure-conducting medium to the diaphragm portion of the sensor chip. Therefore, it is possible to detect the pressure of a corrosive gas or a conductive liquid with high accuracy with a simple structure compared to the conventional example, and further, because the structure is simple, downsizing and cost reduction can be achieved .

【0006】請求項2の発明は、請求項1の発明におい
て、前記器体の内部と連通し前記磁性流体層が配設され
る圧力導入孔を有し、前記器体の受圧部に配設されるポ
ールピースを備えたものであり、ポールピースによって
磁性流体が器体内外へ漏れ出すのを防止できるとともに
磁性流体層を簡単に器体の受圧部に配設することができ
る。
According to a second aspect of the present invention, in the first aspect of the invention, there is provided a pressure introduction hole communicating with the inside of the container and in which the magnetic fluid layer is arranged, and the pressure introduction hole is provided in the pressure receiving portion of the container. It is possible to prevent the magnetic fluid from leaking out of the body by the pole piece and to easily dispose the magnetic fluid layer on the pressure receiving portion of the body.

【0007】[0007]

【発明の実施の形態】以下、本発明の実施形態を図面を
参照して詳細に説明する。なお、従来例と共通する部分
については同一の符号を付して説明は省略する。本実施
形態は、図1に示すように、半導体基板を加工して薄膜
のダイヤフラム部1a及びダイヤフラム部1aの圧力に
よる歪みを検出する検出素子たるピエゾ抵抗(図示せ
ず)が形成されたセンサチップ1と、腐食性ガスや水な
どの被圧力検出流体Pの圧力をダイヤフラム部1に伝達
する液状の導圧媒体たるシリコンオイル4が充填された
器体3と、器体3より突出した圧力導入管3bの先端部
(受圧部)に配設されてシリコンオイル4と被圧力検出
流体Pを隔離する磁性流体層5と、磁気力により磁性流
体層5を所定位置に保持する永久磁石6とを備えてい
る。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings. Parts common to the conventional example are denoted by the same reference numerals and description thereof is omitted. In the present embodiment, as shown in FIG. 1, a semiconductor chip is processed to form a thin film diaphragm portion 1a and a sensor chip formed with a piezoresistor (not shown) as a detection element for detecting strain due to pressure of the diaphragm portion 1a. 1, a container 3 filled with silicon oil 4, which is a liquid pressure-inducing medium for transmitting the pressure of the pressure detection fluid P such as corrosive gas or water to the diaphragm portion 1, and a pressure introduction protruding from the container 3. A magnetic fluid layer 5 that is disposed at the tip (pressure receiving portion) of the tube 3b and separates the silicon oil 4 from the pressure detection fluid P, and a permanent magnet 6 that holds the magnetic fluid layer 5 at a predetermined position by a magnetic force. I have it.

【0008】器体3は、例えば合成樹脂によって略函形
に形成された主部3aと、この主部3aの底面より外側
へ突設された筒状の圧力導入管3bとから成り、主部3
aの底面に形成された圧力導入管3bの開口を塞ぐよう
に、センサチップ1を取着したガラス台座2が固定され
る。すなわち、圧力導入管3bの内部の導入路3cとガ
ラス台座2の内部の通路2aとが連通することになる。
The body 3 comprises, for example, a main portion 3a formed of a synthetic resin in a substantially box shape, and a cylindrical pressure introducing pipe 3b protruding outward from the bottom surface of the main portion 3a. Three
The glass pedestal 2 to which the sensor chip 1 is attached is fixed so as to close the opening of the pressure introducing pipe 3b formed on the bottom surface of a. That is, the introduction passage 3c inside the pressure introduction pipe 3b and the passage 2a inside the glass pedestal 2 communicate with each other.

【0009】一方、圧力導入管3bの先端部にはポール
ピース7が接着固定するなどして取り付けられ、さらに
圧力導入管3bの導入路3c内並びにガラス台座2の通
路2a内には、導圧媒体となるシリコンオイル4が充填
されている。ポールピース7は、図2に示すような一対
の円板状の平板部7aを支柱部7bの両端に有する構造
を有し、支柱部7bには対向する一対の平板部7aにそ
れぞれ貫通する圧力導入孔7cが、支柱部7bの中心軸
の周囲に複数(3つ)設けてある。さらに、ポールピー
ス7の内側には平板状の永久磁石6が挿入され、且つ3
つの圧力導入孔7cの内部に磁性流体が注入されて磁性
流体層5が形成されている。
On the other hand, a pole piece 7 is attached to the tip of the pressure introducing pipe 3b by adhering and fixing it, and the pressure is introduced into the introducing passage 3c of the pressure introducing pipe 3b and the passage 2a of the glass base 2. Silicon oil 4 as a medium is filled. The pole piece 7 has a structure in which a pair of disk-shaped flat plate portions 7a as shown in FIG. 2 are provided at both ends of the support pillar portion 7b. A plurality of (three) introduction holes 7c are provided around the central axis of the column 7b. Further, a flat permanent magnet 6 is inserted inside the pole piece 7, and
The magnetic fluid is injected into the pressure introducing holes 7c to form the magnetic fluid layer 5.

【0010】そして、このように構成された半導体圧力
センサは、図1に示すように孔8の内部に圧力導入管3
bが挿入され、孔8の内壁との間にOリング9が配設さ
れて気密に保持されている。而して、ポールピース7に
設けた3つの圧力導入孔7c内に配設された磁性流体層
5を介して、被圧力検出流体Pの圧力がシリコンオイル
4に伝達される。ここで、ポールピース7の内部に挿入
された永久磁石6の磁気力により、磁気流体層5がほぼ
所定の位置に保持されるため、圧力導入孔7cより外に
漏れ出すことはない。
The semiconductor pressure sensor thus constructed has the pressure introducing pipe 3 inside the hole 8 as shown in FIG.
b is inserted, and an O-ring 9 is arranged between the inner wall of the hole 8 and the inner wall of the hole 8 to be held airtight. Thus, the pressure of the pressure detection fluid P is transmitted to the silicon oil 4 via the magnetic fluid layer 5 provided in the three pressure introduction holes 7c provided in the pole piece 7. Here, since the magnetic fluid layer 5 is held at a substantially predetermined position by the magnetic force of the permanent magnet 6 inserted inside the pole piece 7, it does not leak out from the pressure introducing hole 7c.

【0011】上述のように、永久磁石6の磁気力により
所定の位置に保持された磁性流体層5によって、器体3
の内部に充填された導圧媒体(シリコンオイル4)と被
圧力検出流体P(腐食性ガスや水など)を隔離するよう
にしたため、シリコンオイル4と被圧力検出流体Pが混
じることがなく、従来例に比べて簡単な構成で腐食性を
有する気体や導電性を有する液体などの流体の圧力を検
出することができる。また、従来のステンレスダイヤフ
ラム13に比較して磁性流体層5の反力は減少するか
ら、高精度な検出が可能となる。さらに、構成が簡単で
あるために小型化並びにコストダウンが図れるという利
点もある。しかも、本実施形態では磁性流体層5並びに
永久磁石6をポールピース7によって保持させているか
ら、磁性流体が器体3の内外へ漏れ出すのを防止できる
とともに磁性流体層5を簡単に器体3の受圧部(圧力導
入管3bの先端部)に配設することができるという利点
がある。なお、ポールピース7を磁性材料によって形成
することにより、ポールピース7が永久磁石6による磁
界の磁路を形成し、磁性流体層5の保持力を向上させる
ことも可能である。
As described above, the body 3 is held by the magnetic fluid layer 5 held at a predetermined position by the magnetic force of the permanent magnet 6.
Since the pressure guiding medium (silicon oil 4) filled in the inside of the container is separated from the pressure detection fluid P (corrosive gas, water, etc.), the silicon oil 4 and the pressure detection fluid P do not mix, The pressure of a fluid such as a corrosive gas or a conductive liquid can be detected with a simpler structure than the conventional example. Further, since the reaction force of the magnetic fluid layer 5 is smaller than that of the conventional stainless steel diaphragm 13, it is possible to perform highly accurate detection. Further, since the structure is simple, there is an advantage that the size and cost can be reduced. Moreover, in this embodiment, since the magnetic fluid layer 5 and the permanent magnet 6 are held by the pole piece 7, it is possible to prevent the magnetic fluid from leaking into and out of the body 3, and the magnetic fluid layer 5 can be easily constructed. There is an advantage that it can be arranged at the pressure receiving portion 3 (the tip portion of the pressure introducing pipe 3b). By forming the pole piece 7 from a magnetic material, the pole piece 7 can form a magnetic path of the magnetic field of the permanent magnet 6, and the holding force of the magnetic fluid layer 5 can be improved.

【0012】ところで、図3及び図4に示すように、中
央部分にメッシュ部10aを有する平板状の隔離板10
を圧力導入管3bの先端部に取り付けることにより、こ
のメッシュ部10aを通して被圧力検出流体Pの圧力を
シリコンオイル4に伝達することができるとともに、シ
リコンオイル4は表面張力によってメッシュ部10aか
ら外へ漏れ出すことがないものであり、このような隔離
板10を用いても腐食性を有する気体や導電性を有する
液体の圧力を簡単な構造により高精度で検出することが
できる。
By the way, as shown in FIGS. 3 and 4, a flat plate-like separator 10 having a mesh portion 10a in the central portion thereof.
Is attached to the tip of the pressure introducing pipe 3b, the pressure of the pressure detection target fluid P can be transmitted to the silicon oil 4 through the mesh portion 10a, and the silicon oil 4 moves outward from the mesh portion 10a by surface tension. Since it does not leak, the pressure of a corrosive gas or a conductive liquid can be detected with high accuracy by a simple structure even with such a separator 10.

【0013】[0013]

【発明の効果】請求項1の発明は、半導体基板を加工し
て薄膜のダイヤフラム部及び該ダイヤフラム部の圧力に
よる歪みを検出する検出素子が形成されたセンサチップ
と、被圧力検出流体の圧力を前記ダイヤフラム部に伝達
する液状の導圧媒体が充填された器体と、該器体の受圧
部に配設され前記導圧媒体と被圧力検出流体を隔離する
磁性流体層と、磁気力により前記磁性流体層を所定位置
に保持する磁石とを備えたので、器体内に充填された導
圧媒体が磁性流体層によって被圧力検出流体と隔離され
るから両者が混じることがなく、従来例に比べて簡単な
構成で腐食性を有する気体や導電性を有する液体の圧力
を高精度に検出することができ、また、構成が簡単であ
るから小型化並びにコストダウンが図れるという効果が
ある。
According to the first aspect of the present invention, a semiconductor chip is processed to form a thin film diaphragm portion and a sensor chip formed with a detection element for detecting strain due to the pressure of the diaphragm portion, and the pressure of a pressure detection fluid. A container filled with a liquid pressure-conducting medium to be transmitted to the diaphragm portion, a magnetic fluid layer disposed in the pressure-receiving portion of the container to separate the pressure-conducting medium from the pressure detection fluid, and a magnetic force Since the magnetic fluid layer is provided with a magnet for holding the magnetic fluid layer at a predetermined position, the pressure-conducting medium filled in the body is separated from the fluid to be pressure-detected by the magnetic fluid layer, so that they do not mix with each other. The pressure of a corrosive gas or a conductive liquid can be detected with high accuracy by a simple and simple structure, and the size and cost can be reduced because the structure is simple.

【0014】請求項2の発明は、前記器体の内部と連通
し前記磁性流体層が配設される圧力導入孔を有し、前記
器体の受圧部に配設されるポールピースを備えたので、
ポールピースによって磁性流体が器体内外へ漏れ出すの
を防止できるとともに磁性流体層を簡単に器体の受圧部
に配設することができるという効果がある。
According to a second aspect of the present invention, there is provided a pole piece which has a pressure introducing hole communicating with the inside of the container and in which the magnetic fluid layer is arranged, and which is arranged in a pressure receiving portion of the container. So
The pole piece has an effect that the magnetic fluid can be prevented from leaking into and out of the body and that the magnetic fluid layer can be easily arranged in the pressure receiving portion of the body.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施形態を示す側面断面図である。FIG. 1 is a side sectional view showing an embodiment of the present invention.

【図2】同上におけるポールピースを示す平面図であ
る。
FIG. 2 is a plan view showing a pole piece of the above.

【図3】同上の他の構成を示す要部の断面図である。FIG. 3 is a cross-sectional view of a main part showing another configuration of the above.

【図4】同上における隔離板を示す平面図である。FIG. 4 is a plan view showing a separator plate of the above.

【図5】従来例を示す側面断面図である。FIG. 5 is a side sectional view showing a conventional example.

【符号の説明】[Explanation of symbols]

1 センサチップ 3 器体 3b 圧力導入管 3c 圧力導入路 4 シリコンオイル 5 磁性流体層 6 永久磁石 7 ポールピース 7c 圧力導入孔 P 被圧力検出流体 1 Sensor chip 3 Body 3b Pressure introduction pipe 3c Pressure introduction path 4 Silicon oil 5 Magnetic fluid layer 6 Permanent magnet 7 Pole piece 7c Pressure introduction hole P Pressure detected fluid

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板を加工して薄膜のダイヤフラ
ム部及び該ダイヤフラム部の圧力による歪みを検出する
検出素子が形成されたセンサチップと、被圧力検出流体
の圧力を前記ダイヤフラム部に伝達する液状の導圧媒体
が充填された器体と、該器体の受圧部に配設され前記導
圧媒体と被圧力検出流体を隔離する磁性流体層と、磁気
力により前記磁性流体層を所定位置に保持する磁石とを
備えたことを特徴とする半導体圧力センサ。
1. A sensor chip on which a semiconductor substrate is processed to form a diaphragm portion of a thin film and a detection element for detecting strain due to the pressure of the diaphragm portion, and a liquid for transmitting the pressure of a fluid to be detected under pressure to the diaphragm portion. Of the pressure guiding medium, a magnetic fluid layer disposed in the pressure receiving portion of the body for separating the pressure sensing medium from the pressure detection fluid, and the magnetic fluid layer at a predetermined position by magnetic force. A semiconductor pressure sensor, comprising: a magnet for holding the semiconductor pressure sensor.
【請求項2】 前記器体の内部と連通し前記磁性流体層
が配設される圧力導入孔を有し、前記器体の受圧部に配
設されるポールピースを備えたことを特徴とする請求項
1記載の半導体圧力センサ。
2. A pole piece, which has a pressure introducing hole communicating with the inside of the container and in which the magnetic fluid layer is arranged, and which is arranged in a pressure receiving portion of the container. The semiconductor pressure sensor according to claim 1.
JP5957696A 1996-03-15 1996-03-15 Semiconductor pressure sensor Withdrawn JPH09250964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5957696A JPH09250964A (en) 1996-03-15 1996-03-15 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5957696A JPH09250964A (en) 1996-03-15 1996-03-15 Semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPH09250964A true JPH09250964A (en) 1997-09-22

Family

ID=13117206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5957696A Withdrawn JPH09250964A (en) 1996-03-15 1996-03-15 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPH09250964A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2028468A2 (en) 2007-08-24 2009-02-25 Panasonic Electric Works Co., Ltd. Fluid pressure sensor package
JP2013506841A (en) * 2009-10-01 2013-02-28 ローズマウント インコーポレイテッド Pressure transmitter with pressure sensor mount
US8869623B2 (en) 2010-12-13 2014-10-28 Panasonic Corporation Pressure sensor mounting structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2028468A2 (en) 2007-08-24 2009-02-25 Panasonic Electric Works Co., Ltd. Fluid pressure sensor package
US8022806B2 (en) 2007-08-24 2011-09-20 Panasonic Electric Works Co., Ltd. Fluid pressure sensor package
JP2013506841A (en) * 2009-10-01 2013-02-28 ローズマウント インコーポレイテッド Pressure transmitter with pressure sensor mount
US8869623B2 (en) 2010-12-13 2014-10-28 Panasonic Corporation Pressure sensor mounting structure

Similar Documents

Publication Publication Date Title
US8069732B2 (en) Ultra-miniature multi-hole probes having high frequency, high temperature responses
JP2001527210A (en) Universal media package for pressure sensing devices
KR20120065940A (en) Semiconductor pressure sensor and manufacturing method thereof
JPS6063437A (en) Pressure detecting capsule
JPH03201336A (en) Pressure sensor package
WO2003012386A1 (en) Pressure sensor
EP2279398A2 (en) Media isolated differential pressure sensor with cap
EP0197130A1 (en) Pressure transducer
CN101184977A (en) Transducer
JPH09250964A (en) Semiconductor pressure sensor
US20090126499A1 (en) Ultra miniature multi-hole probes having high frequency response
JP2012181062A (en) Force detector housing case and force measuring instrument
JPH09250943A (en) Water level sensor
JP2004279326A (en) Pressure sensor
JPS637334B2 (en)
JP2013108876A (en) Semiconductor pressure sensor and manufacturing method therefor
JPS62228927A (en) Pressure sensor
JPH06273248A (en) Pressure sensor and manufacture thereof
JPH11241970A (en) Pressure sensor
JPH04309831A (en) Plastic mold pressure sensor package
JP2000162074A (en) Pressure sensor
JPH0833334B2 (en) Differential pressure transmitter
JP2011252739A (en) Pressure detecting device
JPS63243830A (en) Semiconductor pressure detector
JPH04307369A (en) Acceleration sensor

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20030603