JPH09232295A - Manufacturing apparatus of semiconductor device - Google Patents
Manufacturing apparatus of semiconductor deviceInfo
- Publication number
- JPH09232295A JPH09232295A JP3603896A JP3603896A JPH09232295A JP H09232295 A JPH09232295 A JP H09232295A JP 3603896 A JP3603896 A JP 3603896A JP 3603896 A JP3603896 A JP 3603896A JP H09232295 A JPH09232295 A JP H09232295A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas pipe
- temperature
- semiconductor device
- insulating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置の製造装
置に関し、特に半導体装置製造材料として低沸点の液化
ガスを用い、この液化ガスをガス源から処理室にまで供
給するためのガス配管を有する半導体装置の製造装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly, it uses a low boiling point liquefied gas as a semiconductor device manufacturing material and has a gas pipe for supplying the liquefied gas from a gas source to a processing chamber. The present invention relates to a semiconductor device manufacturing apparatus.
【０００２】[0002]
【従来の技術】従来のこの種の半導体装置の製造装置で
は、液化ガス源においてガス化されたガスが処理室まで
のガス配管を通流される間に冷却されて再び液化される
ことがあり、処理室において有効なガスが得られないこ
とがある。このような問題を解決するためのものとし
て、例えば実開平４−１１０７５４号公報で提案されて
いる技術がある。この技術は、図５に示すように、ガス
ボンベ２から反応室１にガスを通流させるためのガス配
管３の一部、ここでは第１，第２バルブ４，５とマスフ
ローコントローラ８を有するガス配管３の一部に電気ヒ
ータ１１を配設し、この電気ヒータ１１を温度制御回路
１２により制御してガス配管３を加熱し、ガス配管３内
を通流されるガスの温度低下を防止してガスの再液化を
防止している。2. Description of the Related Art In a conventional semiconductor device manufacturing apparatus of this type, the gasified gas in a liquefied gas source may be cooled and liquefied again while flowing through a gas pipe to a processing chamber. Effective gas may not be obtained in the processing chamber. As a means for solving such a problem, for example, there is a technique proposed in Japanese Utility Model Laid-Open No. 4-110754. As shown in FIG. 5, this technique is applied to a part of a gas pipe 3 for passing a gas from a gas cylinder 2 to a reaction chamber 1, here, a gas having first and second valves 4,5 and a mass flow controller 8. An electric heater 11 is arranged in a part of the pipe 3, and the electric heater 11 is controlled by a temperature control circuit 12 to heat the gas pipe 3 to prevent the temperature of the gas flowing through the gas pipe 3 from decreasing. Prevents reliquefaction of gas.
【０００３】しかしながら、この従来技術では、電気ヒ
ータ１１によってガス配管の長さ方向の一部のみを加熱
しているため、外気の温度が低い場合には、この加熱部
分以外の温度がガスの液化温度にまで低下されることが
あり、その結果ガスが再液化されてしまうという問題が
生じやすい。ガス配管内でガスが再液化することによ
り、ガス流量が振らつき、製造プロセスが不安定となり
製品歩留りが低下する。更に、再液化したガス配管を再
び正常な状態に戻すのに数時間を要するので、生産性に
も影響を及ぼし、特に腐食性ガス（Ｃｌ2 ，ＢＣｌ
3 等）の再液化はガス配管内壁の腐食を加速し、信頼性
にも影響を与えることになる。However, in this prior art, since only a part of the gas pipe in the lengthwise direction is heated by the electric heater 11, when the temperature of the outside air is low, the temperature other than the heated part is liquefied. The temperature may be lowered to the temperature, and as a result, the problem that the gas is reliquefied easily occurs. The reliquefaction of the gas in the gas pipe fluctuates the gas flow rate, which makes the manufacturing process unstable and lowers the product yield. Furthermore, it takes several hours to return the reliquefied gas pipe to a normal state again, which affects productivity as well, particularly corrosive gases (Cl 2 , BCl 2) .
The reliquefaction of ( 3 etc.) accelerates the corrosion of the inner wall of the gas pipe and affects the reliability.
【０００４】このような問題を解決するためには、図６
に示す技術が考えられる。この技術では、第１バルブ４
から第２バルブ５まで至るガス配管３の長い領域に電気
ヒータ１１Ｃを配設し、この領域のガス配管３を加温す
ることで部分的にガス配管の温度が低下されることを防
止している。このように、すれば、電気ヒータ１１Ｃに
よってガス配管３の長い領域を加熱することができるた
め、この領域での温度低下が防止され、ガスの再液化を
防止することが可能となる。In order to solve such a problem, FIG.
The technology shown in can be considered. In this technology, the first valve 4
The electric heater 11C is provided in a long region of the gas pipe 3 from the second valve 5 to the second valve 5, and the temperature of the gas pipe 3 is prevented from being partially lowered by heating the gas pipe 3 in this region. There is. In this way, since the electric heater 11C can heat the long region of the gas pipe 3, the temperature drop in this region can be prevented, and the reliquefaction of the gas can be prevented.
【０００５】[0005]
【発明が解決しようとする課題】ところで、本発明者の
検討によれば、ガス配管におけるガスの再液化は、単に
温度を所定以上に確保していれば足りるのではなく、ガ
ス配管における温度のムラが大きな要因となることが判
明した。すなわち、ガス配管内でのガスの再液化は、圧
力と温度の影響を最も受ける。同一体積の場合、圧力が
高い方が状態エネルギが小さくなる方向へ進むので、再
液化し易くなる。温度による再液化も沸点以下にすれば
起こるが、ガス配管内の再液化現象は、沸点以上でも起
こるので、温度だけでなく前記の圧力の影響を強く受け
ている。配管内が減圧下であれば、室温での再液化は起
こらず、問題にならない。配管内が加圧下の場合、再液
化は温度ムラによって起こる。ガスボンベ（上流）側の
温度が高い場合、液化ガスは多く気化し、ガス配管内に
流れ込む。ところが配管の途中に外気の影響を受けて局
所的に冷却された箇所があった場合、その温度で気化で
きるガスの量は減少して飽和蒸気圧を越えてしまうの
で、その差分だけガスは再液化してしまうことになる。By the way, according to the study by the present inventor, the reliquefaction of gas in the gas pipe is not sufficient if the temperature is kept at a predetermined temperature or more. It was found that unevenness was a major factor. That is, the reliquefaction of the gas in the gas pipe is most affected by the pressure and the temperature. In the case of the same volume, the higher the pressure is, the smaller the state energy is, and thus the easier it is to reliquefy. Reliquefaction due to temperature also occurs if the temperature is below the boiling point, but the reliquefaction phenomenon in the gas pipe occurs above the boiling point, so that it is strongly affected not only by the temperature but also by the pressure. If the inside of the pipe is under reduced pressure, reliquefaction does not occur at room temperature, which is not a problem. When the inside of the pipe is under pressure, reliquefaction occurs due to uneven temperature. When the temperature on the gas cylinder (upstream) side is high, a large amount of liquefied gas is vaporized and flows into the gas pipe. However, if there is a locally cooled part in the middle of the pipe due to the influence of the outside air, the amount of gas that can be vaporized at that temperature will decrease and exceed the saturated vapor pressure, so the gas will be regenerated by the difference. It will be liquefied.
【０００６】したがって、理想的にはガス配管の全長さ
にわたってその温度ムラが生じていないことが望まし
い。この点で、図６に示した技術では、ガス配管の長い
領域を電気ヒータで加熱しているため、長い領域の温度
を均一化する上では有効である。しかしながら、実際に
は電気ヒータをガス配管に対して均一に巻き付けること
は困難であるため、電気ヒータの巻き付けが疎の部分で
は外気の影響を受け、局所的に低温箇所が生まれる。ま
た、電気ヒータは使い続けると徐々に劣化されるため、
ガス配管の長さ方向でみた場合、電気ヒータの劣化がそ
のまま温度ムラとなる。このように、実際にはガス配管
における温度ムラの発生を完全に防止することは困難で
ある。数度の温度差でも少量ながら再液化が起こり雪だ
るま式に徐々に再液化が配管内に広がり、最終的にはガ
スの流れを止めてしまう。Therefore, ideally, it is desirable that the temperature unevenness does not occur over the entire length of the gas pipe. In this respect, the technique shown in FIG. 6 is effective in equalizing the temperature in the long region because the long region of the gas pipe is heated by the electric heater. However, in practice, it is difficult to uniformly wind the electric heater around the gas pipe. Therefore, in a sparsely wound portion of the electric heater, the outside air is affected and a low temperature portion is locally generated. Also, since the electric heater gradually deteriorates with continued use,
When viewed in the length direction of the gas pipe, the deterioration of the electric heater causes temperature unevenness as it is. As described above, it is actually difficult to completely prevent the occurrence of temperature unevenness in the gas pipe. Reliquefaction occurs even with a small temperature difference of a few degrees, but the reliquefaction gradually spreads into the pipe like a snowball, eventually stopping the gas flow.
【０００７】本発明の目的は、このようなガス配管にお
ける温度ムラが原因とされるガスの再液化を防止するこ
とを可能にした半導体装置の製造装置を提供することに
ある。An object of the present invention is to provide a semiconductor device manufacturing apparatus capable of preventing reliquefaction of a gas caused by such temperature unevenness in a gas pipe.
【０００８】[0008]
【課題を解決するための手段】本発明の製造装置は、液
化ガスを蓄積したガスボンベと、所要の反応処理を行う
ための反応室とを接続するガス配管の一部領域を断熱材
で被覆するとともに、この断熱材で被覆したガス配管の
下流領域に加熱装置を設けたことを特徴とする。この場
合、ガス配管の一部には前記液化ガスの流量を制御する
ためのマスフローコントローラが設けられ、このガスボ
ンベとマスフローコントローラとの間のガス配管を前記
断熱材で被覆し、かつ加熱装置を設ける。また、この場
合、加熱装置は前記ガス配管の前記マスフローコントロ
ーラ側にのみ設けられる。これにより、ガス配管の加熱
温度が、前記下流側で高く、上流側で低い温度勾配とを
有するよう設定される。In the manufacturing apparatus of the present invention, a partial region of a gas pipe connecting a gas cylinder storing a liquefied gas and a reaction chamber for performing a required reaction treatment is covered with a heat insulating material. At the same time, a heating device is provided in a downstream region of the gas pipe covered with the heat insulating material. In this case, a mass flow controller for controlling the flow rate of the liquefied gas is provided in a part of the gas pipe, the gas pipe between the gas cylinder and the mass flow controller is covered with the heat insulating material, and a heating device is provided. . Further, in this case, the heating device is provided only on the mass flow controller side of the gas pipe. Thus, the heating temperature of the gas pipe is set to have a high temperature gradient on the downstream side and a low temperature gradient on the upstream side.
【０００９】また、本発明の製造装置は、ガス配管の一
部領域を断熱材で被覆するとともに、この断熱材で被覆
したガス配管の複数箇所に加熱装置を設け、これら複数
個の加熱装置の温度制御を個別に行うことを特徴とす
る。この場合、ガス配管に沿って複数個の温度センサを
設け、複数の加熱装置を各温度センサの検出温度に基づ
いて個別に行うことが好ましい。Further, in the manufacturing apparatus of the present invention, a partial region of the gas pipe is covered with a heat insulating material, and heating devices are provided at a plurality of positions of the gas pipe covered with the heat insulating material. The feature is that temperature control is individually performed. In this case, it is preferable to provide a plurality of temperature sensors along the gas pipe and individually perform a plurality of heating devices based on the temperatures detected by the temperature sensors.
【００１０】[0010]
【発明の実施の形態】次に、本発明の実施形態を図面を
参照して説明する。図１は本発明を減圧ＣＶＤ装置に適
用した一例を示す構成図である。反応室１はガス配管３
を介してＳｉＨ2 Ｃｌ2 ガス及びＮＨ3 ガスの各ガス源
であるガスボンベ２に接続される。ガス配管３には第１
ないし第４の各バルブ４，５，６，７が介挿配置され、
これらのバルブの切り換え制御と、ガス配管３に設けた
マスフローコントローラ８によって反応室１に供給され
るガス流量が制御されるように構成される。また、反応
室１は真空ポンプ９によって所定の負圧に制御される。
そして、前記ガス配管３では、ガスボンベ２に近い第１
バルブ４からマスフローコントローラ８の直前の第２バ
ルブ５までの間に断熱材１０を設け、この断熱材１０に
よってガス配管３のその領域を被っている。また、この
断熱材１０で被われたガス配管３の領域では、その下流
側の一部に電気ヒータ１１が設けられ、温度制御回路１
２によって電気ヒータ１１の加熱温度を制御するように
構成される。なお、前記電気ヒータ１１には温度センサ
１３が付設されており、この温度センサ１３の検出温度
に基づいて加熱温度を所定の温度に制御することが行わ
れる。Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing an example in which the present invention is applied to a low pressure CVD apparatus. Reaction chamber 1 is gas pipe 3
Via is connected to a gas cylinder 2 is each source of gas SiH 2 Cl 2 gas and NH 3 gas. Gas pipe 3 has a first
To the fourth valves 4, 5, 6, 7 are interposed and
The switching control of these valves and the mass flow controller 8 provided in the gas pipe 3 are configured to control the flow rate of the gas supplied to the reaction chamber 1. Further, the reaction chamber 1 is controlled to a predetermined negative pressure by the vacuum pump 9.
In the gas pipe 3, the first gas pipe 2 close to the gas cylinder 2
A heat insulating material 10 is provided between the valve 4 and the second valve 5 immediately before the mass flow controller 8, and the heat insulating material 10 covers the region of the gas pipe 3. Further, in the region of the gas pipe 3 covered with the heat insulating material 10, an electric heater 11 is provided at a part of the downstream side thereof, and the temperature control circuit 1
2 is configured to control the heating temperature of the electric heater 11. A temperature sensor 13 is attached to the electric heater 11, and the heating temperature is controlled to a predetermined temperature based on the temperature detected by the temperature sensor 13.
【００１１】この構成においては、温度制御回路１２に
より電気ヒータ１１を加熱制御し、ガス配管３のその部
分を４０℃に調整する。また、ガス配管３は断熱材１０
によって覆われているために、外気や風等による放熱の
影響を配管が受けないので、ガス配管３では第２バルブ
５から第１バルブ４に向かって緩やかに下降する温度勾
配が構成される。このため、ガスボンベ２から反応室１
に向けて通流されるＳｉＨ2 Ｃｌ2 及びＮＨ3 ガスは、
第１バルブ４から第２バルブ５に向かって断熱材１０内
のガス配管３を僅かながら温度が上がる方向に通流され
ることになる。このように、温度が上がる方向にガスが
流れるので、同一圧力下では飽和蒸気圧は大きくなる方
向になり、このガスがガス配管３内で再液化することは
なくなる。なお、ガスはマスフローコントローラ８にて
ＳｉＨ2 Ｃｌ2 は０．１SLM ，ＮＨ3 は０．９SLM に流
量制御され、第３バルブ６を経て圧力３０Ｐａ，温度８
００℃の反応室１へ導入される。反応室１において、窒
化膜成長に関与しなかった残ガスは真空ポンプ９により
排出される。In this structure, the electric heater 11 is heated and controlled by the temperature control circuit 12, and the temperature of the portion of the gas pipe 3 is adjusted to 40.degree. In addition, the gas pipe 3 is a heat insulating material 10.
Since the pipe is not affected by heat radiation due to outside air or wind, the gas pipe 3 has a temperature gradient that gradually drops from the second valve 5 to the first valve 4. Therefore, from the gas cylinder 2 to the reaction chamber 1
SiH 2 Cl 2 and NH 3 gas flowing toward the
The gas pipe 3 in the heat insulating material 10 flows from the first valve 4 to the second valve 5 in a direction in which the temperature slightly rises. Since the gas flows in such a direction that the temperature rises, the saturated vapor pressure tends to increase under the same pressure, and this gas will not be reliquefied in the gas pipe 3. The flow rate of gas is controlled by the mass flow controller 8 to be 0.1 SLM for SiH 2 Cl 2 and 0.9 SLM for NH 3 , and the pressure is 30 Pa and the temperature is 8 Pa through the third valve 6.
It is introduced into the reaction chamber 1 at 00 ° C. In the reaction chamber 1, the residual gas not involved in the nitride film growth is exhausted by the vacuum pump 9.
【００１２】このように、ガス配管３を断熱材１０で覆
い、ガス配管３の温度分布をガスの下流側から上流側へ
下降方向の温度勾配が形成される。図２はこの温度勾配
を示す図であり、図中、実線が本発明により得られた温
度勾配であり、破線は図６に示した従来のガス配管にお
ける温度分布を示している。これから判るように、従来
の技術においては、ガス配管の長い領域を電気ヒータで
加熱しても外気や風やヒータの劣化の影響を受けて、例
えば４０℃設定にしても温度幅にして約３℃振らつきガ
ス配管に温度ムラが生じている。これに対し、本発明に
おいてはガス配管３を断熱材１０で覆うので外気や風の
影響を受けての温度ムラが生じ難くなる。更に、ガス配
管３の下流側に電気ヒータ１１を設けてガス配管３に上
流側から下流側に向けて徐々に温度が上昇される温度勾
配が形成される。In this way, the gas pipe 3 is covered with the heat insulating material 10, and a temperature gradient in the downward direction is formed in the temperature distribution of the gas pipe 3 from the downstream side to the upstream side of the gas. FIG. 2 is a diagram showing this temperature gradient. In the figure, the solid line shows the temperature gradient obtained by the present invention, and the broken line shows the temperature distribution in the conventional gas pipe shown in FIG. As can be seen from the above, in the conventional technique, even if a long area of the gas pipe is heated by an electric heater, it is affected by outside air, wind, or deterioration of the heater, and even if it is set at 40 ° C., the temperature width is about 3 Fluctuations in temperature occur in the gas pipe. On the other hand, in the present invention, since the gas pipe 3 is covered with the heat insulating material 10, the temperature unevenness due to the influence of the outside air or the wind hardly occurs. Further, an electric heater 11 is provided on the downstream side of the gas pipe 3 to form a temperature gradient in the gas pipe 3 in which the temperature gradually rises from the upstream side to the downstream side.
【００１３】例えば、本実施形態の場合、２００Ｗの電
気ヒータを用い、厚さ３０ｍｍのガラスウール製の断熱
材を用い、ＳＵＳ３１６Ｌ，１／４インチのガス配管を
用い、電気ヒータを４０℃に設定した場合、２０ｍ上流
側の配管温度は３９℃であり、直線的に下降する温度勾
配とされている。このため、ガス配管に温度ムラが生じ
たとした場合でも、上流側から下流に向けて温度が徐々
に上昇されるため、通流ガスが局所的に温度低下される
ことはなく、これによりガスの再液化が生じることはな
い。For example, in the case of this embodiment, an electric heater of 200 W is used, a heat insulating material made of glass wool having a thickness of 30 mm is used, a gas pipe of SUS316L, ¼ inch is used, and the electric heater is set to 40 ° C. In that case, the pipe temperature on the upstream side of 20 m is 39 ° C., which is a temperature gradient that linearly decreases. Therefore, even if the temperature unevenness occurs in the gas pipe, the temperature is gradually increased from the upstream side to the downstream side, so that the temperature of the flowing gas is not locally lowered, and the No reliquefaction occurs.
【００１４】さらに、この実施形態では、ガス配管３
は、マスフローコントローラ８を境に上流側が加圧状態
で、下流側が減圧状態にある。前記したように、ガスの
再液化は同一堆積当たりガス量の多い加圧状態において
生じ易いため、加圧状態にあるマスフローコントローラ
８よりも上流側のガス配管において前記断熱材１０と電
気ヒータ１１を設けてここに温度勾配を形成すること
で、前記した再液化を有効に防止することが可能とな
る。Further, in this embodiment, the gas pipe 3
Indicates that the upstream side is in a pressurized state and the downstream side is in a depressurized state with the mass flow controller 8 as a boundary. As described above, reliquefaction of gas is likely to occur in a pressurized state where a large amount of gas is deposited per deposition, so that the heat insulating material 10 and the electric heater 11 are connected to each other in the gas pipe upstream of the mass flow controller 8 in the pressurized state. By providing it and forming a temperature gradient here, it becomes possible to effectively prevent the above-mentioned reliquefaction.
【００１５】したがって、ガスの再液化が防止され、こ
れにより製造プロセスが安定し、製品歩留が安定する共
に生産性，配管の信頼性が向上する。また、再液化した
ガス配管を再び正常な状態に戻す必要もないため、従来
必要とされていたガスのガス化のための数時間の処理が
不要となり生産性の低下も抑制される。Therefore, reliquefaction of gas is prevented, which stabilizes the manufacturing process, stabilizes the product yield, and improves the productivity and the reliability of piping. Further, since it is not necessary to return the reliquefied gas pipe to a normal state again, it is not necessary to perform a process of several hours for gasifying the gas, which has been conventionally required, and it is possible to suppress a decrease in productivity.
【００１６】次に、本発明の第２の実施形態について図
面を参照して説明する。図３は本発明の第２の実施形態
の要部の構成図であり、第１の実施形態と等価な部分に
は同一符号を付してある。この実施形態では、ガス配管
３の配管長が１００ｍ，２００ｍと長い場合に有効であ
り、ガス配管３を断熱材１０で覆うと共に、この断熱材
で覆われたガ配管の最も下流側の位置に第１の電気ヒー
タ１１Ａを配設し、さらに断熱材１０で覆われたガス配
管３の長さ方向のほぼ中間位置に第２の電気ヒータ１１
Ｂを配設している。また、各電気ヒータ１１Ａ，１１Ｂ
の近傍にはそれぞれ温度センサ１３Ａ，１３Ｂが設けら
れ、各電気ヒータで加熱されるガス配管のその部分の温
度を検出する。そして、前記各電気ヒータ１１Ａ，１１
Ｂは、それぞれ各温度センサ１３Ａ，１３Ｂの検出温度
に基づいて温度制御回路１２によって個別に温度制御さ
れるように構成される。Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 3 is a configuration diagram of a main part of the second embodiment of the present invention, and the same parts as those of the first embodiment are designated by the same reference numerals. This embodiment is effective when the pipe length of the gas pipe 3 is as long as 100 m and 200 m. The gas pipe 3 is covered with the heat insulating material 10, and at the most downstream position of the gas pipe covered with this heat insulating material. The first electric heater 11A is provided, and the second electric heater 11 is provided at a substantially middle position in the length direction of the gas pipe 3 covered with the heat insulating material 10.
B is arranged. Also, each electric heater 11A, 11B
Temperature sensors 13A and 13B are provided in the vicinity of, respectively, and detect the temperature of that portion of the gas pipe heated by each electric heater. Then, the electric heaters 11A, 11
B is configured to be individually temperature-controlled by the temperature control circuit 12 based on the temperatures detected by the temperature sensors 13A and 13B, respectively.
【００１７】この構成では、温度制御回路１２により第
１電気ヒータ１１Ａを４０℃に調整する。第１の電気ヒ
ータ１１Ａのみでは、ガスボンベ２に近いガス配管３の
上流側の部分ではその温度は約３℃低下されるため、温
度勾配としては十分なものが得られるが、断熱材１０だ
けでは外乱の影響を十分に押さえることができないおそ
れがある。そこで、第２電気ヒータ１１Ｂを取り付け
て、ガス配管３の中間領域を加熱し温度が下がり過ぎな
いように補正する。この場合、第２電気ヒータ１１Ｂは
ガス配管の長さ方向の中間位置よりガス配管長の１０％
下流側に取り付けることで、ガス配管長の中間付近の温
度の調整を行っている。また、この場合第２電気ヒータ
１１Ｂによる加熱部分がそれよりも下流の領域よりも温
度が極端に高くならないように制御することが好まし
い。In this structure, the temperature control circuit 12 adjusts the temperature of the first electric heater 11A to 40.degree. With only the first electric heater 11A, the temperature of the upstream portion of the gas pipe 3 close to the gas cylinder 2 is lowered by about 3 ° C., so a sufficient temperature gradient can be obtained, but with the heat insulating material 10 alone. It may not be possible to sufficiently suppress the influence of disturbance. Therefore, the second electric heater 11B is attached, and the intermediate region of the gas pipe 3 is heated so that the temperature does not drop excessively. In this case, the second electric heater 11B is 10% of the gas pipe length from the middle position in the length direction of the gas pipe.
By installing on the downstream side, the temperature near the middle of the gas pipe length is adjusted. Further, in this case, it is preferable to control so that the temperature of the portion heated by the second electric heater 11B does not become extremely higher than that of the downstream region.
【００１８】この結果、図４に示すように、前記第１の
実施形態では３℃低下した第１バルブ４付近の温度の低
下が１．５℃程度に抑さえられ、ガス配管の熱分布によ
ってガス配管における温度勾配を維持させる。万一、電
気ヒータが劣化してもガス配管の連続した領域を電気ヒ
ータで加熱しているのでないため、配管温度の振らつき
幅は小さくできる。このように、ガス配管において温度
ムラが殆どない温度勾配ができるので、再液化を抑制で
き、これにより製造プロセスが安定し、製造歩留が安定
となると共に生産性が向上される。As a result, as shown in FIG. 4, the temperature drop around the first valve 4, which has been lowered by 3 ° C. in the first embodiment, is suppressed to about 1.5 ° C., and the heat distribution of the gas pipe causes Maintain a temperature gradient in the gas pipe. Even if the electric heater deteriorates, the continuous area of the gas pipe is not heated by the electric heater, so that the fluctuation range of the pipe temperature can be reduced. In this way, since a temperature gradient with almost no temperature unevenness can be formed in the gas pipe, reliquefaction can be suppressed, which stabilizes the manufacturing process, stabilizes the manufacturing yield, and improves productivity.
【００１９】[0019]
【発明の効果】以上説明したように本発明は、液化ガス
を反応室に供給するためのガス配管の一部領域を断熱材
で被覆するとともに、この断熱材で被覆したガス配管の
下流領域に加熱装置を設けているので、断熱材によりガ
ス配管が外部の影響を受けて温度ムラが生じることが抑
制でき、加熱装置によって上流側から下流側に向けて温
度が徐々に上昇される温度勾配が形成されるため、温度
ムラが原因とされるガスの再液化を防止することがで
き、これにより、製造する半導体装置の製品歩留が向上
すると共に生産性、信頼性が向上できるという効果が得
られる。As described above, according to the present invention, a partial region of a gas pipe for supplying a liquefied gas to a reaction chamber is covered with a heat insulating material, and a downstream region of the gas pipe covered with the heat insulating material is covered. Since the heating device is provided, it is possible to suppress the occurrence of temperature unevenness due to the influence of the outside on the gas pipe due to the heat insulating material, and there is a temperature gradient in which the temperature gradually rises from the upstream side to the downstream side by the heating device. Since it is formed, it is possible to prevent reliquefaction of the gas caused by temperature unevenness, which improves the product yield of the semiconductor device to be manufactured and also has the effect of improving productivity and reliability. To be
【図１】本発明の第１の実施形態の全体構成を示す構成
図である。FIG. 1 is a configuration diagram showing an overall configuration of a first embodiment of the present invention.
【図２】第１の実施形態におけるガス配管における温度
勾配を示す図である。FIG. 2 is a diagram showing a temperature gradient in a gas pipe in the first embodiment.
【図３】本発明の第２の実施形態の要部の構成図であ
る。FIG. 3 is a configuration diagram of a main part of a second embodiment of the present invention.
【図４】第２の実施形態におけるガス配管における温度
勾配を示す図である。FIG. 4 is a diagram showing a temperature gradient in a gas pipe in the second embodiment.
【図５】従来の構成の一例を示す一部の構成図である。FIG. 5 is a partial configuration diagram showing an example of a conventional configuration.
【図６】従来の構成の他の例を示す一部の構成図であ
る。FIG. 6 is a partial configuration diagram showing another example of a conventional configuration.
１ 反応室 ２ ガスボンベ ３ ガス配管 ４〜７ バルブ ８ マスフローコントローラ ９ 真空ポンプ １０ 断熱材 １１，１１Ａ，１１Ｂ 電気ヒータ １２ 温度制御回路 １３，１３Ａ，１３Ｂ 温度センサ 1 Reaction Chamber 2 Gas Cylinder 3 Gas Pipe 4-7 Valve 8 Mass Flow Controller 9 Vacuum Pump 10 Heat Insulating Material 11, 11A, 11B Electric Heater 12 Temperature Control Circuit 13, 13A, 13B Temperature Sensor
Claims (6)
の反応処理を行うための反応室とをガス配管で接続し、
前記液化ガスをガス化して前記反応室に供給するガス供
給系を備える半導体装置の製造装置において、前記ガス
配管の一部領域を断熱材で被覆するとともに、この断熱
材で被覆した前記ガス配管の下流領域に加熱装置を設け
たことを特徴とする半導体装置の製造装置。1. A gas cylinder in which a liquefied gas is accumulated and a reaction chamber for performing a required reaction process are connected by a gas pipe,
In a semiconductor device manufacturing apparatus including a gas supply system that gasifies the liquefied gas and supplies the liquefied gas to the reaction chamber, a partial region of the gas pipe is covered with a heat insulating material, and the gas pipe of the heat insulating material is covered. An apparatus for manufacturing a semiconductor device, wherein a heating device is provided in a downstream region.
を制御するためのマスフローコントローラが設けられ、
前記ガスボンベと前記マスフローコントローラとの間の
ガス配管を前記断熱材で被覆し、かつ加熱装置を設けて
なる請求項１の半導体装置の製造装置。2. A mass flow controller for controlling the flow rate of the liquefied gas is provided in a part of the gas pipe,
2. The semiconductor device manufacturing apparatus according to claim 1, wherein a gas pipe between the gas cylinder and the mass flow controller is covered with the heat insulating material, and a heating device is provided.
フローコントローラ側にのみ設けられる請求項２の半導
体装置の製造装置。3. The semiconductor device manufacturing apparatus according to claim 2, wherein the heating device is provided only on the mass flow controller side of the gas pipe.
で高く、上流側で低い温度勾配とを有するよう設定され
る請求項１ないし３のいずれかの半導体装置の製造装
置。4. The semiconductor device manufacturing apparatus according to claim 1, wherein the heating temperature of the gas pipe is set to have a high temperature gradient on the downstream side and a low temperature gradient on the upstream side.
の反応処理を行うための反応室とをガス配管で接続し、
前記液化ガスをガス化して前記反応室に供給するガス供
給系を備える半導体装置の製造装置において、前記ガス
配管の一部領域を断熱材で被覆するとともに、この断熱
材で被覆した前記ガス配管の複数箇所に加熱装置を設
け、これら複数個の加熱装置の温度制御を個別に行うこ
とを特徴とする半導体装置の製造装置。5. A gas cylinder in which a liquefied gas is accumulated and a reaction chamber for performing a required reaction treatment are connected by a gas pipe,
In a semiconductor device manufacturing apparatus including a gas supply system that gasifies the liquefied gas and supplies the liquefied gas to the reaction chamber, a partial region of the gas pipe is covered with a heat insulating material, and the gas pipe of the heat insulating material is covered. An apparatus for manufacturing a semiconductor device, wherein heating devices are provided at a plurality of locations, and temperature control of the plurality of heating devices is individually performed.
設け、前記複数の加熱装置を前記各温度センサの検出温
度に基づいて個別に行う請求項５の半導体装置の製造装
置。6. The semiconductor device manufacturing apparatus according to claim 5, wherein a plurality of temperature sensors are provided along the gas pipe, and the plurality of heating devices are individually operated based on the temperatures detected by the respective temperature sensors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08036038A JP3077583B2 (en) | 1996-02-23 | 1996-02-23 | Semiconductor device manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08036038A JP3077583B2 (en) | 1996-02-23 | 1996-02-23 | Semiconductor device manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09232295A true JPH09232295A (en) | 1997-09-05 |
| JP3077583B2 JP3077583B2 (en) | 2000-08-14 |
Family
ID=12458547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08036038A Expired - Lifetime JP3077583B2 (en) | 1996-02-23 | 1996-02-23 | Semiconductor device manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3077583B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017076781A (en) * | 2015-10-16 | 2017-04-20 | 株式会社日立国際電気 | Heating section, substrate processing apparatus, and method of manufacturing semiconductor device |
-
1996
- 1996-02-23 JP JP08036038A patent/JP3077583B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017076781A (en) * | 2015-10-16 | 2017-04-20 | 株式会社日立国際電気 | Heating section, substrate processing apparatus, and method of manufacturing semiconductor device |
| CN106601650A (en) * | 2015-10-16 | 2017-04-26 | 株式会社日立国际电气 | Heating part, substrate processing apparatus and method of manufacturing semiconductor device |
| US11198935B2 (en) | 2015-10-16 | 2021-12-14 | Kokusai Electric Corporation | Heating part, substrate processing apparatus, and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3077583B2 (en) | 2000-08-14 |
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