JPH09232274A - Method for treatment surface of semiconductor substrate and surface treatment device of semiconductor substrate - Google Patents
Method for treatment surface of semiconductor substrate and surface treatment device of semiconductor substrateInfo
- Publication number
- JPH09232274A JPH09232274A JP3322996A JP3322996A JPH09232274A JP H09232274 A JPH09232274 A JP H09232274A JP 3322996 A JP3322996 A JP 3322996A JP 3322996 A JP3322996 A JP 3322996A JP H09232274 A JPH09232274 A JP H09232274A
- Authority
- JP
- Japan
- Prior art keywords
- surface treatment
- semiconductor substrate
- vapor
- carrier gas
- storage tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【発明の属する技術分野】本発明は、２種以上の物質成
分からなる表面処理用薬液の蒸気を半導体基板の供給
し、該半導体基板の表面処理を行う表面処理方法と、こ
の方法を実施するのに好適に用いられる表面処理装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides a surface treatment method for supplying a vapor of a surface treatment chemical solution comprising two or more substance components to a semiconductor substrate to perform the surface treatment of the semiconductor substrate, and a method for implementing the method. The present invention relates to a surface treatment device preferably used for
【０００２】[0002]
【従来の技術】半導体装置の製造プロセスにおいては、
その初期のプロセスとして、シリコンウエハ、あるいは
これの表面に絶縁膜等を形成してなる半導体基板に対
し、成膜処理に先立って洗浄処理を行ったり、あるいは
形成した絶縁膜等のエッチング処理を行うなどといった
表面処理がなされている。このような表面処理として、
従来、例えば特開昭６１−１４８８２０号公報に開示さ
れた処理方法が知られている。この処理方法は、処理室
の下部に設けた貯留槽にフッ化水素酸、水、アルコール
からなる表面処理用の混合液を貯留し、ヒータで加熱す
ることによって該混合液を気化し、得られた混合蒸気を
半導体基板に供給して該基板を表面処理するようにした
ものである。なお、このような表面処理方法は、液体で
はなく気体・蒸気を使用していることから、一般にドラ
イ洗浄とも呼ばれている。2. Description of the Related Art In a semiconductor device manufacturing process,
As an initial process, a silicon wafer or a semiconductor substrate having an insulating film or the like formed on the surface thereof is subjected to cleaning treatment prior to film formation processing or etching treatment of the formed insulating film or the like. Surface treatment such as is done. As such surface treatment,
Conventionally, for example, the processing method disclosed in Japanese Patent Laid-Open No. 61-148820 is known. This treatment method is obtained by storing a mixed liquid for surface treatment consisting of hydrofluoric acid, water, and alcohol in a storage tank provided in the lower part of the processing chamber, and vaporizing the mixed liquid by heating with a heater. The mixed vapor is supplied to the semiconductor substrate for surface treatment of the substrate. Since such a surface treatment method uses gas or vapor instead of liquid, it is generally called dry cleaning.
【０００３】この表面処理方法においては、最も重要な
要素の一つとして混合蒸気の組成の安定化が挙げられて
いる。すなわち、蒸気組成が変動してしまうと、半導体
基板全面にわたって均一な表面処理が行えなくなるだけ
でなく、処理毎にまでばらつきが生じてしまうからであ
る。In this surface treatment method, stabilization of the composition of the mixed vapor is mentioned as one of the most important factors. That is, if the vapor composition changes, not only the uniform surface treatment cannot be performed over the entire surface of the semiconductor substrate, but also variation occurs in each treatment.
【０００４】このような問題を解決するためには、何ら
かの方法により混合蒸気の組成を一定に保持するための
制御が必要となり、従来、このような制御として、特公
昭６２−５０２９３０号公報、特公平７−５２７２９号
公報に開示された技術が知られている。前者の技術は、
フッ化水素を充填したボンベより得られるフッ化水素ガ
スと、水蒸気とを混合させた混合気体を用い、半導体基
板の表面処理を行う方法である。この方法では、９９．
９９重量％の工業用フッ化水素ガス、あるいは約５０重
量％のフッ化水素酸水溶液を加熱することによって得ら
れる気体、つまり無水でガス状態の乾燥フッ化水素が必
要であるとされている。後者の技術は、高濃度無水フッ
化水素の危険性を回避するために、予め共沸状態となる
組成、圧力および温度で表面処理用薬液を調合し、そこ
から発生する蒸気を利用する方法である。In order to solve such a problem, it is necessary to control to keep the composition of the mixed vapor constant by some method. Conventionally, such control is disclosed in Japanese Patent Publication No. 62-502930. The technique disclosed in Japanese Patent Publication No. 7-52729 is known. The former technique is
This is a method of performing surface treatment of a semiconductor substrate using a mixed gas in which hydrogen fluoride gas obtained from a cylinder filled with hydrogen fluoride and water vapor are mixed. In this method, 99.
It is said that 99% by weight of industrial hydrogen fluoride gas or a gas obtained by heating about 50% by weight aqueous solution of hydrofluoric acid, that is, dry hydrogen fluoride in anhydrous and gaseous state is required. In the latter technique, in order to avoid the risk of high-concentration anhydrous hydrogen fluoride, a chemical solution for surface treatment is preliminarily prepared at a composition, pressure, and temperature that are in an azeotropic state, and vapor generated from the chemical solution is used. is there.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、前者の
技術では、人体に悪影響のある高濃度の無水フッ化水素
を用いることから、このガスの取扱が非常に難しく、そ
の安全性の確保に多大な注意が必要となっている。一
方、後者の技術では、前述したように高濃度無水フッ化
水素の危険性についてはこれを回避できるものの、共沸
状態をつくるため表面処理用薬液の温度を上げる必要が
あることから、安全性を確保するうえでこの温度制御に
高い精度が要求されてしまう。However, in the former technique, since a high concentration of anhydrous hydrogen fluoride, which has an adverse effect on the human body, is used, it is very difficult to handle this gas, and it is very important to ensure its safety. Attention is needed. On the other hand, in the latter technique, although the danger of high-concentration anhydrous hydrogen fluoride can be avoided as described above, it is necessary to raise the temperature of the chemical solution for surface treatment in order to create an azeotropic state. In order to ensure the above, high accuracy is required for this temperature control.
【０００６】本発明は前記事情に鑑みてなされたもの
で、その目的とするところは、表面処理薬液の危険性を
最小限に抑え、さらに表面処理薬液調整のための制御を
容易にした半導体基板の表面処理方法と、これに好適に
用いられる半導体基板の表面処理装置とを提供すること
にあるThe present invention has been made in view of the above circumstances. An object of the present invention is to minimize the risk of the surface treatment chemicals and to facilitate control for adjusting the surface treatment chemicals. Another object of the present invention is to provide a surface treatment method and a semiconductor substrate surface treatment apparatus suitably used for this method.
【０００７】[0007]
【課題を解決するための手段】本発明における請求項１
記載の半導体基板の表面処理方法では、２種以上の物質
成分からなる表面処理用薬液の蒸気を半導体基板に供給
し、該半導体基板の表面処理を行うにあたり、前記表面
処理用薬液をその沸点より低い温度に置き、この表面処
理用薬液の蒸気をキャリアガスに同伴させて前記半導体
基板に供給することを前記課題の解決手段とした。Means for Solving the Problems Claim 1 of the present invention
In the surface treatment method for a semiconductor substrate according to the description, a vapor of a surface treatment chemical solution composed of two or more substance components is supplied to the semiconductor substrate, and the surface treatment chemical solution is heated from its boiling point in performing the surface treatment of the semiconductor substrate. The means for solving the above problems was to place the chemical solution for surface treatment in a low temperature and to entrain the vapor of the chemical solution for surface treatment in the carrier gas to supply the vapor to the semiconductor substrate.
【０００８】また、請求項２記載の半導体基板の表面処
理方法では、２種以上の物質成分からなる表面処理用薬
液の蒸気を半導体基板に供給し、該半導体基板の表面処
理を行うにあたり、前記表面処理用薬液の成分となる物
質の液を少なくとも２種類の成分に分けてそれぞれその
沸点より低い温度に置き、これら成分の液の蒸気を流量
が調整されたキャリアガスにそれぞれ同伴させ、さらに
これらキャリアガスに同伴された前記蒸気を混合させた
後、該混合蒸気を前記半導体基板に供給することを前記
課題の解決手段とした。Further, in the surface treatment method for a semiconductor substrate according to a second aspect of the present invention, the vapor of the surface treatment chemical liquid comprising two or more kinds of substance components is supplied to the semiconductor substrate to perform the surface treatment of the semiconductor substrate. The liquid of the substance that becomes the component of the surface treatment chemical is divided into at least two types of components, each of which is placed at a temperature lower than its boiling point, and the vapors of these components are caused to accompany the carrier gas whose flow rate is adjusted. The means for solving the above problems is to supply the mixed vapor to the semiconductor substrate after mixing the vapor entrained in the carrier gas.
【０００９】これらの表面処理方法によれば、表面処理
用薬液の蒸気、あるいは表面処理用薬液の成分となる物
質の液の蒸気をキャリアガスに同伴させて半導体基板に
供給するようにしたので、表面処理用薬液が人体に危険
のあるものであっても、その蒸気の生成が安全でかつ容
易になる。また、表面処理用薬液をその沸点より低い温
度に置くので、表面処理用薬液の危険性が最小限に抑え
られる。According to these surface treatment methods, the vapor of the chemical liquid for surface treatment or the vapor of the liquid of the substance to be a component of the chemical liquid for surface treatment is supplied together with the carrier gas to the semiconductor substrate. Even if the surface treatment chemical is dangerous to the human body, the vapor generation is safe and easy. Further, since the surface treating chemical is placed at a temperature lower than its boiling point, the risk of the surface treating chemical can be minimized.
【００１０】本発明における請求項３記載の半導体基板
の表面処理装置では、２種以上の物質成分からなる表面
処理用薬液の蒸気を半導体基板に供給し、該半導体基板
の表面処理を行う表面処理装置であって、前記表面処理
用薬液を貯留する密閉式貯留槽と、この貯留槽内の、貯
留した表面処理用薬液の液面より高い位置に供給路を介
して連通し、かつ半導体基板を収容して該半導体基板の
表面処理を行うための処理室と、前記貯留槽内の、貯留
した表面処理用薬液の液面より高い位置にキャリアガス
を流入させるキャリアガス流入手段と、前記貯留槽およ
び処理室の温度を制御する温度制御手段とを備えてなる
ことを前記課題の解決手段とした。In the surface treatment apparatus for a semiconductor substrate according to the third aspect of the present invention, the surface treatment is carried out by supplying a vapor of a surface treatment chemical solution comprising two or more substance components to the semiconductor substrate to perform the surface treatment of the semiconductor substrate. An apparatus, which is a closed-type storage tank for storing the surface treatment chemical liquid, communicates via a supply path to a position higher than the liquid level of the stored surface treatment chemical liquid in the storage tank, and a semiconductor substrate A processing chamber for accommodating and performing the surface treatment of the semiconductor substrate, a carrier gas inflow means for introducing a carrier gas into a position higher than the liquid level of the stored surface treatment chemical in the storage tank, and the storage tank And a temperature control means for controlling the temperature of the processing chamber.
【００１１】また、請求項４記載の半導体基板の表面処
理装置では、２種以上の物質成分からなる表面処理用薬
液の蒸気を半導体基板に供給し、該半導体基板の表面処
理を行う表面処理装置であって、前記表面処理用薬液の
成分となる物質の液を少なくとも２種類の成分に分け、
これらをそれぞれに貯留する複数の密閉式貯留槽と、こ
れら貯留槽内の、貯留した表面処理用薬液の液面より高
い位置にそれぞれ供給路を介して連通する混合部と、該
混合部に連通し、かつ半導体基板を収容して該半導体基
板の表面処理を行うための処理室と、前記貯留槽内の、
貯留した表面処理用薬液の液面より高い位置にそれぞれ
キャリアガスを流入させるキャリアガス流入手段と、前
記キャリアガスの、前記貯留槽に流入するそれぞれの流
量を調整する流量調整手段と、前記貯留槽、混合部およ
び処理室の温度を制御する温度制御手段とを備えてなる
ことを前記課題の解決手段とした。According to a fourth aspect of the present invention, there is provided a surface treatment apparatus for treating a surface of a semiconductor substrate by supplying a vapor of a surface treatment chemical solution comprising two or more substance components to the semiconductor substrate to perform the surface treatment of the semiconductor substrate. And dividing the liquid of the substance to be the component of the surface treatment chemical liquid into at least two types of components,
A plurality of hermetically sealed storage tanks that store these respectively, a mixing section that communicates with each of the storage tanks at a position higher than the liquid level of the stored surface treatment chemical via a supply path, and a communication section that communicates with the mixing section. And a processing chamber for accommodating the semiconductor substrate and performing surface treatment of the semiconductor substrate, and in the storage tank,
Carrier gas inflow means for respectively injecting a carrier gas into a position higher than the liquid surface of the stored surface treatment chemical liquid, flow rate adjusting means for adjusting each flow rate of the carrier gas flowing into the storage tank, and the storage tank The temperature control means for controlling the temperature of the mixing section and the processing chamber is provided as a means for solving the above problems.
【００１２】これらの表面処理装置によれば、貯留槽に
貯留した表面処理用薬液、あるいは表面処理用薬液の成
分となる物質の液の蒸気をキャリアガスに同伴させ、こ
れを半導体基板を収容する処理室に供給できるようにし
たので、前記表面処理方法の実施に好適なものとなる。According to these surface treatment apparatuses, the chemical vapor for surface treatment stored in the storage tank or the vapor of the liquid of the substance serving as the component of the chemical fluid for surface treatment is caused to accompany the carrier gas, and this is accommodated in the semiconductor substrate. Since it can be supplied to the processing chamber, it is suitable for carrying out the surface treatment method.
【００１３】[0013]
【発明の実施の形態】以下、本発明を詳しく説明する。
図１は、本発明の半導体基板の表面処理装置の第１実施
形態例を示す図であり、図１において符号１は半導体基
板の表面処理装置（以下、表面処理装置と略称する）で
ある。この表面処理装置１は、２種以上の物質成分から
なる表面処理用薬液の蒸気を半導体基板に供給し、該半
導体基板の表面処理を行う表面処理装置である。ここ
で、半導体基板とは、本発明においてはシリコンウエハ
そのもの、あるいはこれの表面に絶縁膜等の各種膜を形
成した基板とする。また、表面処理として具体的には、
このような基板に対しての成膜処理に先立つ洗浄処理、
あるいは形成した絶縁膜等のエッチング処理などが挙げ
られる。BEST MODE FOR CARRYING OUT THE INVENTION The present invention is described in detail below.
FIG. 1 is a diagram showing a first embodiment of a semiconductor substrate surface treatment apparatus of the present invention. In FIG. 1, reference numeral 1 is a semiconductor substrate surface treatment apparatus (hereinafter abbreviated as surface treatment apparatus). The surface treatment apparatus 1 is a surface treatment apparatus that supplies a vapor of a surface treatment chemical liquid composed of two or more kinds of substance components to a semiconductor substrate to perform the surface treatment of the semiconductor substrate. Here, in the present invention, the semiconductor substrate is the silicon wafer itself or a substrate having various films such as an insulating film formed on the surface thereof. Further, specifically, as the surface treatment,
A cleaning process prior to the film forming process on such a substrate,
Alternatively, etching treatment of the formed insulating film or the like can be given.
【００１４】表面処理装置１は、表面処理用薬液を貯留
する密閉式の貯留槽２と、半導体基板Ｗを収容して該半
導体基板Ｗの表面処理を行うための処理室３と、貯留槽
２にキャリアガスを流入させるためのキャリアガス流入
手段４と、貯留槽２、処理室３の温度を制御する恒温槽
（温度制御手段）５とを備えて概略構成されたものであ
る。The surface treatment apparatus 1 includes a closed storage tank 2 for storing a surface treatment chemical solution, a processing chamber 3 for accommodating a semiconductor substrate W and performing a surface treatment on the semiconductor substrate W, and a storage tank 2. A carrier gas inflow means 4 for allowing a carrier gas to flow into the chamber, and a constant temperature tank (temperature control means) 5 for controlling the temperatures of the storage tank 2 and the processing chamber 3 are roughly configured.
【００１５】貯留槽２は、表面処理用薬液Ｌ、この例で
は所定濃度のフッ化水素酸（フッ化水素ガスを溶解した
水）を貯留した密閉式のもので、薬液供給菅６に接続さ
れてこれより表面処理用薬液（以下、薬液と略称する）
Ｌが供給されるように構成されたものである。薬液供給
菅６は、図示しない薬液供給部から流入された薬液Ｌを
貯留槽２に供給するものである。また、貯留槽２内の薬
液Ｌは、貯留槽２の容積全体を満たすことなく、その液
面と貯留槽２の天井面との間に十分な広さの空間を形成
するように調整され、貯留されている。この貯留槽２に
は、液面計などの薬液貯留量を検知する検知装置が設け
られており、この検知装置は前記薬液供給部の制御装置
（図示略）に接続されている。そして、このような構成
により薬液供給部は、貯留槽２内の薬液Ｌの量を検知装
置によって検知し、予め設定された量より少なくなった
分のみを貯留槽２内に供給することにより、貯留槽２内
の薬液貯留量をほぼ一定に維持するものとなっている。The storage tank 2 is of a closed type in which the surface treatment chemical liquid L, in this example, hydrofluoric acid having a predetermined concentration (water in which hydrogen fluoride gas is dissolved) is stored, and is connected to the chemical liquid supply pipe 6. From this, surface treatment chemicals (hereinafter abbreviated as chemicals)
L is supplied. The chemical liquid supply pipe 6 supplies the chemical liquid L that has flowed in from a chemical liquid supply unit (not shown) to the storage tank 2. Further, the chemical liquid L in the storage tank 2 is adjusted so as to form a space having a sufficient space between the liquid surface and the ceiling surface of the storage tank 2 without filling the entire volume of the storage tank 2. It is stored. The storage tank 2 is provided with a detection device such as a liquid level gauge for detecting the amount of stored chemical liquid, and the detection device is connected to a control device (not shown) of the chemical liquid supply unit. With such a configuration, the chemical liquid supply unit detects the amount of the chemical liquid L in the storage tank 2 by the detection device and supplies only the amount smaller than the preset amount into the storage tank 2, The amount of chemical liquid stored in the storage tank 2 is maintained substantially constant.
【００１６】また、この貯留槽２には、貯留した薬液Ｌ
の液面より高い位置に供給配管７が接続されており、こ
の供給配管７には処理室３が接続されている。供給配管
７は、後述するように貯留槽２からの薬液Ｌの蒸気を処
理室３に供給するための供給路となるものであり、処理
室３は、その内部に供給配管７を通って流入してきた薬
液Ｌの蒸気を貯留しあるいは滞留させることにより、予
め処理室３内にセットされた半導体基板Ｗの表面処理を
行うものである。なお、この処理室３には排気菅８が接
続されており、半導体基板Ｗの表面処理が終了した後、
あるいは表面処理中おいて連続的に、処理に用いられた
蒸気がこの排気菅８から排気されるようになっている。Further, the stored chemical liquid L is stored in the storage tank 2.
The supply pipe 7 is connected to a position higher than the liquid surface of the above, and the processing chamber 3 is connected to the supply pipe 7. The supply pipe 7 serves as a supply path for supplying the vapor of the chemical liquid L from the storage tank 2 to the processing chamber 3, as will be described later, and the processing chamber 3 flows into the interior thereof through the supply pipe 7. The surface treatment of the semiconductor substrate W previously set in the processing chamber 3 is performed by storing or retaining the vapor of the chemical liquid L that has been stored. An exhaust pipe 8 is connected to the processing chamber 3, and after the surface treatment of the semiconductor substrate W is completed,
Alternatively, during the surface treatment, the steam used for the treatment is continuously exhausted from the exhaust pipe 8.
【００１７】また、前記貯留槽２には、貯留した薬液Ｌ
の液面より高い位置にキャリアガス導入菅９が接続され
ており、このキャリアガス導入菅９にはキャリアガス源
１０が接続されている。キャリアガスとしては、窒素や
アルゴンガス等の不活性ガス、あるいはドライエアーが
好適に用いられる。したがってキャリアガス源１０とし
ては、前記不活性ガスを充填したガスボンベ、あるいは
ドライエアーを供給する公知の供給装置などが用いられ
る。前記キャリアガス導入菅９には流量制御装置１１が
取り付けられており、これによってキャリアガス導入菅
９を流れるキャリアガスの総流量が調整されるようにな
っている。Further, the stored chemical liquid L is stored in the storage tank 2.
A carrier gas introducing pipe 9 is connected to a position higher than the liquid surface of the carrier gas source, and a carrier gas source 10 is connected to the carrier gas introducing pipe 9. As the carrier gas, an inert gas such as nitrogen or argon gas, or dry air is preferably used. Therefore, as the carrier gas source 10, a gas cylinder filled with the inert gas, a known supply device for supplying dry air, or the like is used. A flow rate control device 11 is attached to the carrier gas introducing tube 9 so that the total flow rate of the carrier gas flowing through the carrier gas introducing tube 9 is adjusted.
【００１８】また、キャリアガス導入菅９は、流量制御
装置１１より下流側にて二つに分岐しており、その一方
が前記貯留槽２に、他方が純水を貯留した水槽１２にそ
れぞれ接続されたものとなっている。水槽１２は、貯留
槽２と同様の構成からなるもので、貯留する水を供給す
るための水供給菅１３に接続され、かつ前記供給配管７
に合流する調整配管１４を接続したものである。また、
キャリガス導入菅９には、二つに分岐したそれぞれに該
分岐路を流れるキャリガスの流量を制御する制御弁等の
制御手段１５が取り付けられており、これによって貯留
槽２、水槽１２に流入するキャリアガスの流量を、それ
ぞれに調整することができるようになっている。なお、
このようなキャリアガス源１０、キャリアガス導入菅
９、および流量制御装置１１、制御手段１５により、本
発明のキャリアガス流入手段４が構成されている。ま
た、これら貯留槽２、水槽１２、処理室３は、前記恒温
槽５内に配置されており、この恒温槽５には、槽内を所
定温度、例えば２０〜３０℃といった室温付近の温度に
調整保持するための温度調整機構が備えられている。The carrier gas introducing pipe 9 is branched into two parts on the downstream side of the flow rate control device 11, one of which is connected to the storage tank 2 and the other is connected to a water tank 12 which stores pure water. It has been done. The water tank 12 has the same configuration as that of the storage tank 2, is connected to a water supply pipe 13 for supplying water to be stored, and has the supply pipe 7 described above.
The adjustment pipe 14 that joins with is connected. Also,
The carrier gas introducing pipe 9 is provided with a control means 15 such as a control valve for controlling the flow rate of the carrier gas flowing through the branch passage in each of the two branches, whereby the carrier flowing into the storage tank 2 and the water tank 12 is installed. The gas flow rate can be adjusted individually. In addition,
The carrier gas inflow means 4 of the present invention is constituted by the carrier gas source 10, the carrier gas introduction pipe 9, the flow rate control device 11, and the control means 15 as described above. Further, the storage tank 2, the water tank 12, and the processing chamber 3 are arranged in the constant temperature tank 5, and the constant temperature tank 5 has a predetermined temperature, for example, a temperature near room temperature such as 20 to 30 ° C. A temperature adjusting mechanism for adjusting and holding is provided.
【００１９】次に、このような構成の表面処理装置１に
よる半導体基板Ｗのエッチング処理方法を基に、本発明
の表面処理方法を説明する。まず、薬液供給菅６よりＨ
Ｆ水溶液（例えば濃度５０重量％）からなる薬液Ｌを貯
留槽２内に供給し、貯留槽２内に所定量の薬液Ｌを貯留
する。同様に、水供給菅１３より純水を水槽１２内に供
給し、水槽１２内に所定量の純水を貯留する。また、こ
れとは別に、処理室３内にエッチング処理をするための
半導体基板Ｗを収容してこれを所定の位置にセットす
る。Next, the surface treatment method of the present invention will be described based on the etching treatment method of the semiconductor substrate W by the surface treatment apparatus 1 having such a configuration. First, H from the chemical supply pipe 6
A chemical liquid L made of an F aqueous solution (for example, a concentration of 50% by weight) is supplied into the storage tank 2, and a predetermined amount of the chemical liquid L is stored in the storage tank 2. Similarly, pure water is supplied from the water supply pipe 13 into the water tank 12, and a predetermined amount of pure water is stored in the water tank 12. Separately from this, the semiconductor substrate W for the etching process is housed in the processing chamber 3 and set at a predetermined position.
【００２０】次に、恒温槽５の温度調整機構を操作し、
恒温槽５内を、薬液Ｌの沸点より低い所定温度、例えば
２５℃といった通常の室温に調整する。そして、恒温槽
５内、すなわち貯留槽２内の薬液Ｌ、水槽１２内の純
水、処理室３内の半導体基板Ｗが全て恒温槽５で設定さ
れた温度に安定したら、流量制御装置１１でキャリアガ
スの総流量を調整し、さらに制御手段で貯留槽２、水槽
１２にそれぞれ流入するキャリアガスの流量を調整し、
この状態でキャリアガスを貯留槽２、水槽１２にそれぞ
れ流入せしめる。Next, by operating the temperature adjusting mechanism of the constant temperature bath 5,
The inside of the constant temperature bath 5 is adjusted to a predetermined temperature lower than the boiling point of the chemical liquid L, for example, a normal room temperature such as 25 ° C. When the temperature of the chemical solution L in the constant temperature tank 5, that is, the pure water in the water tank 12 and the semiconductor substrate W in the processing chamber 3 are all stabilized at the temperature set in the constant temperature tank 5, the flow rate control device 11 is used. The total flow rate of the carrier gas is adjusted, and the flow rate of the carrier gas flowing into the storage tank 2 and the water tank 12 is adjusted by the control means.
In this state, the carrier gas is caused to flow into the storage tank 2 and the water tank 12, respectively.
【００２１】すると、貯留槽２においては、密閉式であ
ることから該貯留槽２内における薬液Ｌの液面と貯留槽
２の天井面との間にＨＦ蒸気と水蒸気との混合蒸気、す
なわち本発明における表面処理用薬液Ｌの蒸気が存在し
ており、ここにキャリアガスが流入せしめられることに
より、薬液Ｌの蒸気は流入したキャリアガスに同伴さ
れ、供給配管７に流れる。このとき、薬液Ｌの濃度は予
め所定濃度に調整され、また貯留槽２内における薬液Ｌ
の量も所定量に保持され、さらに貯留槽２およびこれに
貯留される薬液Ｌの温度も所定温度に保持されているこ
とから、貯留槽２内に生成する薬液Ｌの蒸気量は一定と
なり、したがってキャリアガスの流量に、これに同伴さ
れる蒸気量が決定される。よって、このようにして薬液
Ｌの蒸気を同伴したキャリアガスを、供給配管７を介し
て処理室３に供給し、該蒸気で半導体基板Ｗを接触処理
することにより、半導体基板Ｗの被エッチング層を、所
定量のＨＦ蒸気を含む表面処理用薬液Ｌの蒸気でエッチ
ング処理することができる。すなわち、微少なエッチン
グを精度良く行うには、薬液Ｌの蒸気濃度が少なくても
十分な効果が得られるため、本実施形態例のごとく室温
にて薬液Ｌを蒸発させても、十分に効果的なエッチング
処理を行うことができるのである。Then, since the storage tank 2 is of a closed type, a mixed vapor of HF vapor and steam, that is, a main vapor, is formed between the liquid surface of the chemical liquid L in the storage tank 2 and the ceiling surface of the storage tank 2. The vapor of the chemical liquid L for surface treatment in the invention is present, and the carrier gas is caused to flow into the vapor, so that the vapor of the chemical liquid L is carried with the inflowing carrier gas and flows into the supply pipe 7. At this time, the concentration of the chemical liquid L is adjusted to a predetermined concentration in advance, and the chemical liquid L in the storage tank 2 is adjusted.
Is kept at a predetermined amount, and the temperature of the storage tank 2 and the chemical liquid L stored therein is also kept at a predetermined temperature. Therefore, the vapor amount of the chemical liquid L generated in the storage tank 2 becomes constant, Therefore, the flow rate of the carrier gas determines the amount of vapor accompanying it. Thus, the carrier gas entrained with the vapor of the chemical liquid L is supplied to the processing chamber 3 through the supply pipe 7 and the semiconductor substrate W is contact-treated with the vapor, whereby the layer to be etched of the semiconductor substrate W is Can be etched with the vapor of the surface treatment chemical liquid L containing a predetermined amount of HF vapor. That is, since a sufficient effect can be obtained even if the vapor concentration of the chemical liquid L is low in order to perform the minute etching with high accuracy, even if the chemical liquid L is evaporated at room temperature as in the present embodiment example, it is sufficiently effective. It is possible to perform various etching processes.
【００２２】なお、水槽１２に流入したキャリアガス
は、水槽１２内に生成した水蒸気を同伴し、さらに供給
配管７に流れて貯留槽２から流れてきた前記蒸気を含む
キャリアガスに合流して、貯留槽２からのキャリアガス
中の前記蒸気を希釈するものとなる。したがって、貯留
槽２内から供給配管７に流入せしめられるキャリアガス
中のＨＦ蒸気濃度、および水蒸気濃度が、半導体基板Ｗ
のエッチング条件を満たす場合には、水槽１２にキャリ
アガスを流すことなく、貯留槽２からのみのキャリアガ
スを処理室３内に供給するようにしてもよい。The carrier gas flowing into the water tank 12 is accompanied by the steam generated in the water tank 12, and further flows into the supply pipe 7 to join with the carrier gas containing the steam flowing from the storage tank 2, The vapor in the carrier gas from the storage tank 2 is diluted. Therefore, the HF vapor concentration and the water vapor concentration in the carrier gas flowing into the supply pipe 7 from the inside of the storage tank 2 are determined by the semiconductor substrate W.
If the etching condition is satisfied, the carrier gas may be supplied only from the storage tank 2 into the processing chamber 3 without flowing the carrier gas into the water tank 12.
【００２３】このような表面処理方法にあっては、貯留
槽２に貯留した薬液Ｌから室温のもとで発生した蒸気
を、キャリアガスに同伴させて処理室３内に供給するの
で、蒸気発生を室温のもとで行うことにより、薬液Ｌお
よびその蒸気の危険性を最小限に抑え、これにより処理
操作の安全性を容易に確保することができる。また、一
定の条件で発生した薬液Ｌの蒸気を処理に用いているの
で、蒸気の組成が安定したものとなり、これにより半導
体基板Ｗのエッチング処理を安定して行うことができ
る。さらに、恒温槽６による温度制御により、貯留槽
２、処理室３、水槽１２を全て同一の温度に調整してい
るので、キャリアガスによって同伴された蒸気が供給配
管７内や処理室３内、さらには半導体基板Ｗ表面で凝縮
することがなく、したがって薬液Ｌの蒸気濃度を一定に
維持することができるので、安定したエッチング処理を
行うことができる。また、図１に示した表面処理装置１
にあっては、前述した表面処理方法を実施するのに好適
なものとなる。In such a surface treatment method, since the vapor generated from the chemical liquid L stored in the storage tank 2 at room temperature is entrained in the carrier gas and supplied into the processing chamber 3, vapor generation is performed. Is performed at room temperature, the risk of the chemical liquid L and its vapor can be minimized, and thus the safety of the processing operation can be easily ensured. Moreover, since the vapor of the chemical liquid L generated under a certain condition is used for the treatment, the composition of the vapor becomes stable, and thereby the etching treatment of the semiconductor substrate W can be stably performed. Furthermore, since the storage tank 2, the processing chamber 3, and the water tank 12 are all adjusted to the same temperature by the temperature control by the constant temperature tank 6, the vapor entrained by the carrier gas is supplied in the supply pipe 7 or the processing chamber 3, Furthermore, since it does not condense on the surface of the semiconductor substrate W and therefore the vapor concentration of the chemical liquid L can be maintained constant, a stable etching process can be performed. Moreover, the surface treatment apparatus 1 shown in FIG.
In this case, it is suitable for carrying out the above-mentioned surface treatment method.
【００２４】図２は、本発明の半導体基板の表面処理装
置の第２実施形態例を示す図であり、図２において符号
２０は半導体基板の表面処理装置（以下、表面処理装置
と略称する）である。この表面処理装置２０が図１に示
した表面処理装置１と異なるところは、使用する表面処
理用薬液が２成分系でなく３成分系であることに対応し
て薬液の貯留槽を二つ備え、また処理室が単一の半導体
基板Ｗだけでなく複数の半導体基板Ｗ…を収容し、これ
らを同時に処理できるようになっている点である。FIG. 2 is a diagram showing a second embodiment of the semiconductor substrate surface treatment apparatus of the present invention. In FIG. 2, reference numeral 20 is a semiconductor substrate surface treatment apparatus (hereinafter abbreviated as surface treatment apparatus). Is. The surface treatment apparatus 20 is different from the surface treatment apparatus 1 shown in FIG. 1 in that it has two chemical solution storage tanks corresponding to the fact that the surface treatment chemical solution to be used is not a two-component system but a three-component system. In addition, the processing chamber accommodates not only a single semiconductor substrate W but also a plurality of semiconductor substrates W ... And can process them simultaneously.
【００２５】すなわち、この表面処理装置２０は、３成
分系の表面処理用薬液（Ａ＋Ｂ＋Ｈ 2 Ｏ；ただし、Ａ、
Ｂは薬液Ｌの成分となる各種の化合物）の混合蒸気で半
導体基板Ｗを洗浄しあるいはエッチングすることができ
るように構成されたもので、二つの貯留槽２１、２２を
備えたものである。これら貯留槽２１、２２は、図１に
示した貯留槽２と同一に構成されたもので、それぞれキ
ャリアガス導入菅２３に接続され、かつ供給配管２４に
接続されたものである。貯留槽２１には、この例では化
合物Ａ（例えばフッ化水素）と水とからなる溶液が貯留
され、また貯留槽２２には、この例では化合物Ｂ（例え
ばアルコール）と水とからなる溶液が貯留されている。
なお、供給配管２４は、図１に示した表面処理装置１の
場合と同様に水槽１２にも接続したものとなっており、
このような構成のもとに該供給配管２４は、後述するよ
うに貯留槽２１から供給される蒸気と、貯留槽２２から
供給される蒸気と、水槽１２から供給される水蒸気とを
混合する混合部としても機能するものとなっている。処
理室２５は、この例では、半導体基板Ｗを載置する載置
板を多段に配置して形成された載置台（図示略）を内部
に備えたもので、該載置台の各載置板に半導体基板Ｗを
それぞれ載置することにより、一回の処理で多数の半導
体基板Ｗ…を同時に処理できるようにしたものである。That is, the surface treatment apparatus 20 has three components.
Separated surface treatment chemicals (A + B + H TwoO; However, A,
B is a mixed vapor of various compounds that are the components of the chemical liquid L)
The conductor substrate W can be cleaned or etched
It is configured to have two storage tanks 21 and 22.
Be prepared. These storage tanks 21 and 22 are shown in FIG.
It has the same configuration as the storage tank 2 shown,
Connected to the carrier gas introduction pipe 23 and connected to the supply pipe 24.
It is connected. In this example, the storage tank 21
A solution consisting of compound A (for example hydrogen fluoride) and water is stored
In the storage tank 22, the compound B (for example,
A solution consisting of (alcohol) and water is stored.
The supply pipe 24 is provided in the surface treatment apparatus 1 shown in FIG.
Like the case, it is also connected to the aquarium 12,
Based on such a configuration, the supply pipe 24 will be described later.
From the storage tank 21 and the steam supplied from the storage tank 22
The steam supplied and the steam supplied from the water tank 12
It also functions as a mixing section for mixing. place
In this example, the processing room 25 is a mounting table for mounting the semiconductor substrate W.
Inside a mounting table (not shown) formed by arranging plates in multiple stages
And a semiconductor substrate W on each mounting plate of the mounting table.
By placing each, a large number of semiconductors can be processed in a single process.
The body substrates W ... Can be simultaneously processed.
【００２６】このような構成の表面処理装置２０によっ
て半導体基板Ｗ…のエッチング処理を行うには、図１に
示した表面処理装置１の場合と同様にして、まず、薬液
供給菅６、６より所定濃度に調整された各溶液（化合物
Ａ＋水、化合物Ｂ＋水）を貯留槽２１、２２内にそれぞ
れ供給し、貯留槽２１、２２内に所定量の溶液を貯留す
る。同様に、水供給菅１３より純水を水槽１２内に供給
し、水槽１２内に所定量の純水を貯留する。また、これ
とは別に、処理室２５内にエッチング処理をするための
半導体基板Ｗ…を収容してこれらをそれぞれ所定の位置
にセットする。In order to perform the etching treatment of the semiconductor substrates W ... With the surface treatment apparatus 20 having such a structure, first, as in the case of the surface treatment apparatus 1 shown in FIG. Each solution (compound A + water, compound B + water) adjusted to a predetermined concentration is supplied into the storage tanks 21 and 22, respectively, and a predetermined amount of the solution is stored in the storage tanks 21 and 22. Similarly, pure water is supplied from the water supply pipe 13 into the water tank 12, and a predetermined amount of pure water is stored in the water tank 12. Separately from this, the semiconductor substrates W to be subjected to the etching process are housed in the processing chamber 25 and are set at predetermined positions.
【００２７】次に、恒温槽５の温度調整機構を操作し、
恒温槽５内を、前記各溶液の沸点より低い所定温度、例
えば２５℃といった通常の室温に調整する。そして、恒
温槽５内、すなわち貯留槽２１、２２内の溶液、水槽１
２内の純水、処理室２５内の半導体基板Ｗ…が全て恒温
槽５で設定された温度に安定したら、流量制御装置１１
でキャリアガスの総流量を調整し、さらに制御手段で貯
留槽２１、２２、水槽１２にそれぞれ流入するキャリア
ガスの流量を調整し、この状態でキャリアガスを貯留槽
２１、２２、水槽１２にそれぞれ流入せしめる。Next, by operating the temperature adjusting mechanism of the constant temperature bath 5,
The temperature inside the constant temperature bath 5 is adjusted to a predetermined temperature lower than the boiling point of each solution, for example, a normal room temperature such as 25 ° C. Then, the solution in the constant temperature tank 5, that is, the solutions in the storage tanks 21 and 22, the water tank 1
When the pure water in 2 and the semiconductor substrates W in the processing chamber 25 are all stabilized at the temperature set in the constant temperature bath 5, the flow rate control device 11
The total flow rate of the carrier gas is adjusted by, and the flow rate of the carrier gas flowing into the storage tanks 21, 22 and the water tank 12 is adjusted by the control means, and in this state, the carrier gas is stored in the storage tanks 21, 22 and the water tank 12, respectively. Inflow.
【００２８】すると、貯留槽２１、２２においては、図
１に示した貯留槽２の場合と同様にして、各溶液の蒸気
が流入したキャリアガスに同伴され、供給配管２４に流
れる。このとき、各溶液の濃度は予め所定濃度に調整さ
れ、また各貯留槽２１、２２内における溶液の量も所定
量に保持され、さらに貯留槽２１、２２およびこれに貯
留される溶液の温度も所定温度に保持されていることか
ら、貯留槽２１、２２内に生成する各溶液の蒸気量はそ
れぞれ一定となり、したがってキャリアガスの流量に、
これに同伴される蒸気量が決定される。よって、このよ
うにして各溶液の蒸気を同伴したキャリアガスが供給配
管２４に流入し、ここで水槽１２からのキャリアガスと
合流して混合されることにより、予め設定された成分組
成からなる表面処理用薬液Ｌの蒸気が作製される。そし
て、この表面処理用薬液Ｌの蒸気が処理室２５に供給さ
れ、該蒸気で半導体基板Ｗ…が接触処理されることによ
り、半導体基板Ｗ…の各被エッチング層は、所定量のＨ
Ｆ蒸気を含む表面処理用薬液Ｌの蒸気でエッチング処理
される。Then, in the storage tanks 21 and 22, as in the case of the storage tank 2 shown in FIG. 1, the vapor of each solution is entrained in the inflowing carrier gas and flows into the supply pipe 24. At this time, the concentration of each solution is adjusted to a predetermined concentration in advance, the amount of the solution in each storage tank 21, 22 is also maintained at a predetermined amount, and the temperatures of the storage tanks 21, 22 and the solution stored therein are also adjusted. Since the solution is kept at the predetermined temperature, the amount of vapor of each solution generated in the storage tanks 21 and 22 becomes constant, so that the flow rate of the carrier gas becomes
The amount of steam that accompanies this is determined. Therefore, the carrier gas entrained with the vapor of each solution flows into the supply pipe 24 in this way, and joins with the carrier gas from the water tank 12 to be mixed therewith, whereby a surface having a preset component composition is formed. The vapor of the processing chemical liquid L is produced. Then, the vapor of the surface treatment chemical liquid L is supplied to the processing chamber 25, and the semiconductor substrates W ... Are contact-treated with the vapor, so that each layer to be etched of the semiconductor substrates W ...
Etching is performed with the vapor of the surface treatment chemical liquid L containing the F vapor.
【００２９】このような構成の表面処理装置２０による
表面処理方法にあっては、二つの貯留槽２１、２２にそ
れぞれ表面処理用薬液の成分となる物質の溶液を貯留
し、これらの蒸気を流量が調整されたキャリアガスにそ
れぞれ同伴させて所望する成分組成からなる表面処理用
薬液の蒸気を作製し、これで半導体基板Ｗ…を処理する
ようにしたので、複雑な成分組成からなる表面処理用薬
液によって処理したい場合にも、これを２つの物質成分
に分けることにより、得られる蒸気を必要とする表面処
理用薬液の成分組成に容易に調整することができ、した
がって表面処理そのものを容易にしかも安定して行うこ
とができる。なお、図２に示した表面処理装置２０では
貯留槽を２つにしたが、本発明においては貯留槽を３つ
以上設けてもよいのはもちろんである。In the surface treatment method by the surface treatment apparatus 20 having such a structure, the two storage tanks 21 and 22 store the solutions of the substances to be the components of the surface treatment chemical solution, respectively, and the flow rate of these vapors is increased. Since the vapor of the surface-treating chemical having a desired component composition is produced by accommodating each of the adjusted carrier gases, and the semiconductor substrate W is treated with the vapor, the surface treatment chemical having a complicated component composition is used. Even when it is desired to treat with a chemical solution, by dividing this into two substance components, the obtained vapor can be easily adjusted to the component composition of the surface treatment chemical solution that requires the surface treatment itself. It can be performed stably. Although the surface treatment apparatus 20 shown in FIG. 2 has two storage tanks, it is a matter of course that three or more storage tanks may be provided in the present invention.
【００３０】図３は、本発明の半導体基板の表面処理装
置の第３実施形態例を示す図であり、図３において符号
３０は半導体基板の表面処理装置この表面処理装置３０
が図１に示した表面処理装置１と異なるところは、供給
配管７に、蒸気混合室３１と濃度測定部３２とを設けた
点である。すなわち、この表面処理装置３０には、貯留
槽２、水槽１２に接続された供給配管７に、貯留槽２か
ら流入した蒸気を含むキャリアガス、および水槽１２か
ら流入した蒸気を含むキャリアガスを混合するための蒸
気混合室３１が設けられている。この蒸気混合室３１と
しては、例えばキャリアガスの流路を螺旋状に形成し、
これによりキャリアガスの流れる距離を長くして混合度
を高める構造のものや、ビーズ状の物質をカラムとして
充填し、混合を促進させる構造のものなどが用いられ
る。FIG. 3 is a diagram showing a third embodiment of the semiconductor substrate surface treatment apparatus of the present invention. In FIG. 3, reference numeral 30 is a semiconductor substrate surface treatment apparatus.
Is different from the surface treatment apparatus 1 shown in FIG. 1 in that the supply pipe 7 is provided with a vapor mixing chamber 31 and a concentration measuring unit 32. That is, in the surface treatment apparatus 30, the carrier gas containing the steam flowing from the storage tank 2 and the carrier gas containing the steam flowing from the water tank 12 are mixed in the supply pipe 7 connected to the storage tank 2 and the water tank 12. A steam mixing chamber 31 is provided for this purpose. As the vapor mixing chamber 31, for example, a carrier gas passage is formed in a spiral shape,
As a result, a structure having a structure in which the carrier gas flows longer to increase the degree of mixing, a structure in which a bead-like substance is packed as a column to promote mixing, or the like is used.
【００３１】供給配管７には、前記蒸気混合室３１の下
流側に濃度測定部３２が設けられている。この濃度測定
部３２は、ＧＣ−ＭＳ（ガスクロマトグラフ質量分析
計）を備えて構成されたもので、供給配管７中の混合蒸
気を含むキャリアガスの一部をサンプリングし、これを
前記ＧＣ−ＭＳで測定した後、予め作成した検量線から
濃度を算出するといった手法によりキャリアガス中の各
蒸気濃度を検知するものである。また、この濃度測定部
３２には、前記貯留槽２側の制御手段１５を制御するた
めの制御部（図示略）が設けられている。この制御部
は、濃度測定部３２にて検知された蒸気濃度と、予め設
定された蒸気濃度、すなわち半導体基板Ｗの表面処理に
必要な蒸気濃度とを比較し、検知濃度が設定濃度から外
れている場合に前記制御手段１５を調整し、設定濃度に
なるよう制御するものである。A concentration measuring section 32 is provided in the supply pipe 7 downstream of the vapor mixing chamber 31. The concentration measuring unit 32 is configured by including a GC-MS (gas chromatograph mass spectrometer), samples a part of the carrier gas containing the mixed vapor in the supply pipe 7, and uses the GC-MS to sample the carrier gas. After the measurement, the concentration of each vapor in the carrier gas is detected by a method of calculating the concentration from a calibration curve created in advance. Further, the concentration measuring unit 32 is provided with a control unit (not shown) for controlling the control means 15 on the storage tank 2 side. The control unit compares the vapor concentration detected by the concentration measuring unit 32 with a preset vapor concentration, that is, the vapor concentration necessary for the surface treatment of the semiconductor substrate W, and the detected concentration is out of the set concentration. If so, the control means 15 is adjusted to control the density so as to reach the set density.
【００３２】このような構成の表面処理装置２０による
表面処理方法にあっては、例えば貯留槽２に貯留された
表面処理用薬液Ｌの各成分が、飽和蒸気圧が低いもので
ある場合に、キャリアガスによる同伴だけでは同伴され
た蒸気がキャリアガス全体に均一に拡散することなく、
したがってキャリアガス中の蒸気濃度にムラが生じ易く
なるものの、蒸気混合室３１を設けたことにより、この
ような蒸気濃度のムラをなくして均一な濃度の蒸気を含
むキャリアガスを生成することができる。また、環境の
急激な温度変化など不測の事態に伴い、貯留槽２内に生
成する蒸気量が変化してキャリアガス中の蒸気濃度が変
動しても、制御部を有する濃度測定部３２を設けたこと
により、貯留槽２中に流入するキャリアガス量を調整す
ることによってキャリアガス中の蒸気濃度を元の設定濃
度に戻すことができる。したがって、表面処理装置３０
による表面処理方法にあっては、表面処理用薬液の種類
に関係なく常に安定した蒸気濃度で半導体基板Ｗの表面
処理を行うことができる。In the surface treatment method by the surface treatment apparatus 20 having such a structure, for example, when each component of the surface treatment chemical liquid L stored in the storage tank 2 has a low saturated vapor pressure, The entrained vapor does not uniformly diffuse throughout the carrier gas only by entrainment by the carrier gas,
Therefore, although the vapor concentration in the carrier gas is likely to be uneven, provision of the vapor mixing chamber 31 makes it possible to eliminate such uneven vapor concentration and generate a carrier gas containing a vapor of a uniform concentration. . Further, even if the amount of vapor generated in the storage tank 2 changes and the vapor concentration in the carrier gas fluctuates due to an unexpected situation such as a sudden temperature change in the environment, the concentration measuring unit 32 having a control unit is provided. Therefore, the vapor concentration in the carrier gas can be returned to the original set concentration by adjusting the amount of carrier gas flowing into the storage tank 2. Therefore, the surface treatment device 30
In the surface treatment method according to (4), the surface treatment of the semiconductor substrate W can always be performed with a stable vapor concentration regardless of the kind of the surface treatment chemical.
【００３３】なお、前記第１、第２、第３の実施形態例
では、本発明の表面処理としてエッチング処理を行った
場合について説明したが、例えばシリコンウエハそのも
のからなる半導体基板に対しての洗浄処理を行うことも
できるのはもちろんである。また、前記各実施形態例で
は、恒温槽５による温度設定として通常の室温となる２
５℃としたが、本発明はこれに限定されることなく、表
面処理用薬液の沸点、あるいはこの薬液の成分となる物
質の沸点より低い温度に設定し、その条件のもとで表面
処理を行えばよく、このように沸点より低い温度に設定
することにより、表面処理用薬液の危険性を最小限に抑
えて表面処理を行うことができる。In the first, second and third embodiments, the case where the etching treatment is performed as the surface treatment of the present invention has been described. However, for example, cleaning of a semiconductor substrate made of a silicon wafer itself is performed. Of course, processing can also be performed. Further, in each of the above embodiments, the temperature is set to the normal room temperature by the constant temperature bath 2.
Although the temperature is set to 5 ° C., the present invention is not limited to this, and is set to a temperature lower than the boiling point of the surface treatment chemical or the boiling point of the substance that is a component of this chemical, and the surface treatment is performed under the conditions. It suffices to carry out the treatment, and by setting the temperature lower than the boiling point in this way, it is possible to carry out the surface treatment while minimizing the risk of the chemical liquid for surface treatment.
【００３４】[0034]
【発明の効果】以上説明したように本発明の半導体基板
の表面処理方法は、表面処理用薬液の蒸気、あるいは表
面処理用薬液の成分となる物質の液の蒸気をキャリアガ
スに同伴させて半導体基板に供給するようにしたもので
あるから、表面処理用薬液が人体に危険のあるものであ
っても、その蒸気の生成を安全で容易に行うことがで
き、これにより処理操作の安全性を十分に確保すること
ができる。また、表面処理用薬液をその沸点より低い温
度に置くので、表面処理用薬液の危険性を最小限に抑え
ることができるとともに、得られる蒸気を安定した組成
のものにすることができ、したがって半導体基板の表面
処理を安定して行うことができる。As described above, according to the surface treatment method for a semiconductor substrate of the present invention, the vapor of the surface-treating chemical liquid or the vapor of the liquid of the substance to be a component of the surface-treating chemical liquid is caused to accompany the carrier gas to the semiconductor. Since it is designed to be supplied to the substrate, even if the surface treatment chemical is dangerous to the human body, its vapor can be generated safely and easily, which increases the safety of the treatment operation. You can secure enough. Further, since the surface treating chemical is placed at a temperature lower than its boiling point, the risk of the surface treating chemical can be minimized and the obtained vapor can have a stable composition. The surface treatment of the substrate can be stably performed.
【００３５】本発明の半導体基板の表面処理装置は、貯
留槽に貯留した表面処理用薬液、あるいは表面処理用薬
液の成分となる物質の液の蒸気をキャリアガスに同伴さ
せ、これを半導体基板を収容する処理室に供給できるよ
うにしたもののであるから、前記表面処理方法の実施に
好適なものとなり、したがって処理操作の安全性を十分
に確保することができるとともに、半導体基板の表面処
理を安定して行うことができる。In the surface treatment apparatus for a semiconductor substrate of the present invention, the surface treatment chemical stored in the storage tank or the vapor of the liquid of the substance which is a component of the surface treatment chemical is caused to accompany the carrier gas, and the semiconductor gas is applied to the semiconductor substrate. Since it can be supplied to the processing chamber to be housed, it is suitable for carrying out the surface treatment method described above, and therefore, the safety of the treatment operation can be sufficiently ensured and the surface treatment of the semiconductor substrate can be stabilized. You can do it.
【図１】本発明の半導体基板の表面処理装置の、第１実
施形態例の概略構成図である。FIG. 1 is a schematic configuration diagram of a first embodiment of a semiconductor substrate surface treatment apparatus of the present invention.
【図２】本発明の半導体基板の表面処理装置の、第２実
施形態例の概略構成図である。FIG. 2 is a schematic configuration diagram of a second embodiment of a semiconductor substrate surface treatment apparatus of the present invention.
【図３】本発明の半導体基板の表面処理装置の、第３実
施形態例の概略構成図である。FIG. 3 is a schematic configuration diagram of a third embodiment of the semiconductor substrate surface treatment apparatus of the present invention.
１、２０、３０ 半導体基板の表面処理装置 ２、２
１、２２ 貯留槽 ４ キャリアガス導入手段 ５ 恒温槽（温度制御手
段） ７、２４ 供給配管 ２５ 処理室 Ｗ 半導体基板 Ｌ 表面処理用薬液1, 20, 30 Semiconductor substrate surface treatment apparatus 2, 2
1, 22 Storage tank 4 Carrier gas introduction means 5 Constant temperature tank (temperature control means) 7, 24 Supply pipe 25 Processing chamber W Semiconductor substrate L Surface treatment chemical
Claims (4)
薬液の蒸気を半導体基板に供給し、該半導体基板の表面
処理を行う表面処理方法であって、 前記表面処理用薬液をその沸点より低い温度に置き、こ
の表面処理用薬液の蒸気をキャリアガスに同伴させて前
記半導体基板に供給することを特徴とする半導体基板の
表面処理方法。1. A surface treatment method for supplying a vapor of a surface treatment chemical liquid comprising two or more substance components to a semiconductor substrate to perform the surface treatment of the semiconductor substrate, the surface treatment chemical liquid having a boiling point higher than that of the surface treatment chemical liquid. A method for treating a surface of a semiconductor substrate, which comprises placing the vapor of the chemical for surface treatment in a carrier gas and supplying it to the semiconductor substrate at a low temperature.
薬液の蒸気を半導体基板に供給し、該半導体基板の表面
処理を行う表面処理方法であって、 前記表面処理用薬液の成分となる物質の液を少なくとも
２種類の成分に分けてそれぞれその沸点より低い温度に
置き、これら成分の液の蒸気を流量が調整されたキャリ
アガスにそれぞれ同伴させ、さらにこれらキャリアガス
に同伴された前記蒸気を混合させた後、該混合蒸気を前
記半導体基板に供給することを特徴とする半導体基板の
表面処理方法。2. A surface treatment method for supplying a vapor of a surface treatment chemical solution comprising two or more substance components to a semiconductor substrate to perform the surface treatment of the semiconductor substrate, which is a component of the surface treatment chemical solution. The liquid of the substance is divided into at least two types of components, each of which is placed at a temperature lower than its boiling point, the vapors of the liquids of these components are entrained in the carrier gas whose flow rate is adjusted, and the vapor entrained in these carrier gases is further added. A method for surface treatment of a semiconductor substrate, characterized in that the mixed vapor is supplied to the semiconductor substrate after being mixed.
薬液の蒸気を半導体基板に供給し、該半導体基板の表面
処理を行う表面処理装置であって、 前記表面処理用薬液を貯留する密閉式貯留槽と、 この貯留槽内の、貯留した表面処理用薬液の液面より高
い位置に供給路を介して連通し、かつ半導体基板を収容
して該半導体基板の表面処理を行うための処理室と、 前記貯留槽内の、貯留した表面処理用薬液の液面より高
い位置にキャリアガスを流入させるキャリアガス流入手
段と、 前記貯留槽および処理室の温度を制御する温度制御手段
と、を備えてなることを特徴とする半導体基板の表面処
理装置。3. A surface treatment device for supplying a vapor of a surface treatment chemical liquid comprising two or more substance components to a semiconductor substrate to perform the surface treatment of the semiconductor substrate, wherein the surface treatment chemical liquid is sealed. Type storage tank and a treatment for communicating with a position higher than the liquid surface of the stored surface treatment chemical in the storage tank through a supply path and for accommodating a semiconductor substrate and performing surface treatment of the semiconductor substrate A chamber, a carrier gas inflow means for introducing a carrier gas into the storage tank at a position higher than the liquid surface of the stored surface treatment chemical, and a temperature control means for controlling the temperature of the storage tank and the processing chamber, A surface treatment apparatus for a semiconductor substrate, which comprises:
薬液の蒸気を半導体基板に供給し、該半導体基板の表面
処理を行う表面処理装置であって、 前記表面処理用薬液の成分となる物質の液を少なくとも
２種類の成分に分け、これらをそれぞれに貯留する複数
の密閉式貯留槽と、 これら貯留槽内の、貯留した表面処理用薬液の液面より
高い位置にそれぞれ供給路を介して連通する混合部と、 該混合部に連通し、かつ半導体基板を収容して該半導体
基板の表面処理を行うための処理室と、 前記貯留槽内の、貯留した表面処理用薬液の液面より高
い位置にそれぞれキャリアガスを流入させるキャリアガ
ス流入手段と、 前記キャリアガスの、前記貯留槽に流入するそれぞれの
流量を調整する流量調整手段と、 前記貯留槽、混合部および処理室の温度を制御する温度
制御手段と、を備えてなることを特徴とする半導体基板
の表面処理装置。4. A surface treatment apparatus for supplying a vapor of a surface treatment chemical solution comprising two or more substance components to a semiconductor substrate to perform the surface treatment of the semiconductor substrate, which is a component of the surface treatment chemical solution. A liquid of a substance is divided into at least two types of components, and a plurality of closed type storage tanks for respectively storing these are provided, and a supply path is provided in each of these storage tanks at a position higher than the liquid surface of the stored surface treatment chemical liquid. And a processing chamber for communicating with the mixing section and containing a semiconductor substrate to perform a surface treatment of the semiconductor substrate; and a liquid level of the stored surface treatment chemical in the storage tank. Carrier gas inflow means for respectively injecting a carrier gas to a higher position, flow rate adjusting means for adjusting each flow rate of the carrier gas flowing into the storage tank, temperature of the storage tank, the mixing section and the processing chamber A surface treatment apparatus for a semiconductor substrate, comprising: a temperature control means for controlling the temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3322996A JPH09232274A (en) | 1996-02-21 | 1996-02-21 | Method for treatment surface of semiconductor substrate and surface treatment device of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3322996A JPH09232274A (en) | 1996-02-21 | 1996-02-21 | Method for treatment surface of semiconductor substrate and surface treatment device of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09232274A true JPH09232274A (en) | 1997-09-05 |
Family
ID=12380640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3322996A Pending JPH09232274A (en) | 1996-02-21 | 1996-02-21 | Method for treatment surface of semiconductor substrate and surface treatment device of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09232274A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006190793A (en) * | 2005-01-05 | 2006-07-20 | Hitachi Kokusai Electric Inc | Substrate processing device |
| JP2006521707A (en) * | 2003-03-28 | 2006-09-21 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | In-situ gas mixing and dilution system for delivering diluent gas at a predetermined concentration |
-
1996
- 1996-02-21 JP JP3322996A patent/JPH09232274A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006521707A (en) * | 2003-03-28 | 2006-09-21 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | In-situ gas mixing and dilution system for delivering diluent gas at a predetermined concentration |
| JP2006190793A (en) * | 2005-01-05 | 2006-07-20 | Hitachi Kokusai Electric Inc | Substrate processing device |
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